JP2002033189A - Method for manufacturing organic electroluminescence element and organic electroluminescence element using it - Google Patents
Method for manufacturing organic electroluminescence element and organic electroluminescence element using itInfo
- Publication number
- JP2002033189A JP2002033189A JP2000216213A JP2000216213A JP2002033189A JP 2002033189 A JP2002033189 A JP 2002033189A JP 2000216213 A JP2000216213 A JP 2000216213A JP 2000216213 A JP2000216213 A JP 2000216213A JP 2002033189 A JP2002033189 A JP 2002033189A
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- Japan
- Prior art keywords
- organic
- substrate
- organic electroluminescence
- electroluminescence element
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 13
- 238000005401 electroluminescence Methods 0.000 title claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 239000011521 glass Substances 0.000 claims description 11
- 229920006254 polymer film Polymers 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 35
- 150000002894 organic compounds Chemical class 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000005525 hole transport Effects 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910000733 Li alloy Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000001989 lithium alloy Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229920001646 UPILEX Polymers 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 150000001925 cycloalkenes Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、表示素子に関する
ものであり、更に詳しくは有機エレクトロルミネッセン
ス素子を効率よく製造する方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a display device, and more particularly to a method for efficiently manufacturing an organic electroluminescence device.
【0002】[0002]
【従来の技術】有機エレクトロルミネッセンス素子(以
下、有機EL素子と略す)は薄型,軽量であるとともに
自発光型であるという液晶表示素子(以下、LCDと略
す)とは異なる特徴から、種々の電子機器のディスプレ
イへの使用が期待されている。近年、発光層等の有機材
料の輝度および寿命の改良と、発光色の選択が可能にな
ってきたことから、実用化が始まっている。現在、有機
EL素子は、表示面となるガラス基板上に透明電極であ
るITOをスパッタリング等により形成し、その上にホ
ール輸送層や発光層等の有機層を蒸着等により積層し、
さらにその上に金属電極を積層した後、裏面を金属キャ
ップ等で封止することにより製造している。2. Description of the Related Art Organic electroluminescent elements (hereinafter abbreviated as "organic EL elements") are thin, lightweight and self-luminous, which are different from liquid crystal display elements (hereinafter abbreviated as "LCD"). It is expected to be used for equipment displays. In recent years, practical use has begun since it has become possible to improve the luminance and lifetime of organic materials such as a light emitting layer and to select a light emitting color. At present, an organic EL element is formed by forming ITO, which is a transparent electrode, on a glass substrate serving as a display surface by sputtering or the like, and stacking organic layers such as a hole transport layer and a light emitting layer thereon by vapor deposition,
Furthermore, after laminating a metal electrode thereon, the back surface is sealed with a metal cap or the like to manufacture the device.
【0003】一方、LCDでは、従来のガラス製基板に
変わって高分子フィルムシート製の基板を用いたLCD
が提案され、ガラスより軽量で割れにくいという長所か
ら、電子卓上計算機や携帯電話などに急速に使用されは
じめており、有機EL素子においてもプラスチック基板
化が提案されている。しかし、これらのLCDで使用さ
れている基板は、無色透明であることが必要なため良好
加工工程中で必要な耐熱性や耐溶剤性等が制約を受け、
周辺材料にもガラス基板用とは異なった特別な仕様のも
のが必要になる。そのため、材料費が高価格になった
り、プラスチックに悪影響を及ぼさない発光層等の有機
材料の開発が必要となってしまうという問題がある。On the other hand, in the LCD, an LCD using a substrate made of a polymer film sheet instead of a conventional glass substrate is used.
Has been rapidly used in electronic desktop calculators and mobile phones because of its advantages that it is lighter and harder to break than glass, and a plastic substrate is proposed for an organic EL device. However, since the substrates used in these LCDs need to be colorless and transparent, the heat resistance and solvent resistance required during good processing steps are limited,
Peripheral materials also require special specifications different from those for glass substrates. For this reason, there is a problem that the material cost becomes high, and it is necessary to develop an organic material such as a light emitting layer which does not adversely affect the plastic.
【0004】[0004]
【発明が解決しようとする課題】本発明の目的とすると
ころは、上記の問題を解決し、有機エレクトロルミネッ
センス素子を効率よく製造する方法を提供することにあ
る。SUMMARY OF THE INVENTION It is an object of the present invention to solve the above-mentioned problems and to provide a method for efficiently manufacturing an organic electroluminescence device.
【0005】[0005]
【課題を解決するための手段】本発明は、(1)表示面
側は基板を用いずに電極の形成と被覆を行うことを特徴
とする有機エレクトロルミネッセンス素子の製造方法、
(2)第(1)項記載の方法で製造した有機エレクトロ
ルミネッセンス素子、(3)表示面側に基板を用いずに
電極の形成と被覆を行い、裏面基板にガラス以外の基材
を使用する有機エレクトロルミネッセンス素子、(4)
裏面基板に高分子フィルムシートを用いた第(3)項記
載の有機エレクトロルミネッセンス素子、である。According to the present invention, there is provided a method for manufacturing an organic electroluminescent element, wherein (1) an electrode is formed and coated on a display surface side without using a substrate;
(2) An organic electroluminescent device manufactured by the method described in (1), (3) An electrode is formed and coated on the display surface side without using a substrate, and a substrate other than glass is used for a back substrate. Organic electroluminescence element, (4)
The organic electroluminescence device according to item (3), wherein a polymer film sheet is used for the back substrate.
【0006】[0006]
【発明の実施の形態】本発明の有機EL素子の製造方法
は、次のような工程により素子の製造を行うものであ
る。まず、裏面となる基板上に負極となる金属電極を形
成する。この際、裏面基板が金属または半導体のように
導電性である場合には絶縁層を形成した上に金属電極の
形成を行う。続いて、続いて有機ELとなる各層を形成
する。これらの層は方式により異なるが、電子輸送層兼
発光層とホール輸送層の2層または電子輸送層,発光
層,ホール輸送層の順に形成する。続いて、正極である
表示面の透明電極であるITOを形成する。これらの成
膜工程はドライプロセスで連続的に行ってもよいし、各
プロセスを個別に行うこともできる。さらにITOの上
層に、被覆層を形成する。この層はSiO2をドライプ
ロセスで成膜することもできるが、最外面には耐久性の
面から透明樹脂を液状でコーティングすることが好まし
い。また両者を併用してもかまわない。本発明の製造方
法によれば、使用する基板に透明性は必要無いため、耐
熱性や耐溶剤性に優れる各種の材料を使用することがで
きる。一方、最外層にコーティングされる液状樹脂も、
耐熱性の必要が無いため、透明性が良好なものを使用す
ることができる。DESCRIPTION OF THE PREFERRED EMBODIMENTS The method of manufacturing an organic EL device according to the present invention is to manufacture a device by the following steps. First, a metal electrode serving as a negative electrode is formed on a substrate serving as a back surface. At this time, when the back substrate is conductive like a metal or a semiconductor, a metal electrode is formed after forming an insulating layer. Subsequently, each layer to be an organic EL is formed. These layers are different depending on the method, but are formed as two layers of an electron transport layer / light emitting layer and a hole transport layer or an electron transport layer, a light emitting layer, and a hole transport layer in this order. Subsequently, ITO, which is a transparent electrode on the display surface, which is a positive electrode, is formed. These film forming steps may be performed continuously by a dry process, or each process may be performed individually. Further, a coating layer is formed on the ITO. This layer can be formed of SiO 2 by a dry process, but it is preferable that the outermost surface be coated with a transparent resin in liquid form from the viewpoint of durability. Both may be used in combination. According to the manufacturing method of the present invention, since the substrate to be used does not need to be transparent, various materials having excellent heat resistance and solvent resistance can be used. On the other hand, the liquid resin coated on the outermost layer also
Since there is no need for heat resistance, a material having good transparency can be used.
【0007】本発明の裏面基板に使用されるものの例と
しては、ガラス板、アルミニウム等の金属板、シリコン
ウエハ、アルミナ等のセラミックス板、ポリイミドフィ
ルムやエポキシ板等の高分子フィルムシート等が挙げら
れる。これらのうちガラス以外の材料を用いると素子の
割れによる破損を防げるので好ましい。特に高分子フィ
ルムシートは軽量な素子や屈曲可能な素子が製造できる
ことから、より好ましい。高分子フィルムシートとして
好ましいものとして、ポリイミド、ポリアミド、ポリア
ミドイミド、エポキシ樹脂、アクリル樹脂、ポリエステ
ル、ポリエーテルスルホン、ポリカーボネート、ポリア
リレート、シクロオレフィン系高分子及びこれらをブレ
ンドした樹脂等を挙げることができるがこれらに限定さ
れるものではない。Examples of the back substrate used in the present invention include a glass plate, a metal plate such as aluminum, a silicon wafer, a ceramic plate such as alumina, and a polymer film sheet such as a polyimide film or an epoxy plate. . Of these, it is preferable to use a material other than glass because damage due to cracking of the element can be prevented. In particular, a polymer film sheet is more preferable because a lightweight element or a bendable element can be manufactured. Preferred examples of the polymer film sheet include polyimide, polyamide, polyamide imide, epoxy resin, acrylic resin, polyester, polyether sulfone, polycarbonate, polyarylate, cycloolefin-based polymer, and resin blended with these. Is not limited to these.
【0008】本発明において、裏面の負極電極を形成す
る金属としては、アルミニウム合金や銀を挙げることが
できる。その上に成膜する電子輸送層としては式
(1)、式(2)、式(3)などの有機化合物を挙げる
ことができる。さらに、式(1)や式(2)の分子は発
光層と兼用することができる。In the present invention, examples of the metal forming the negative electrode on the back surface include an aluminum alloy and silver. Examples of the electron transport layer formed thereon include organic compounds represented by Formula (1), Formula (2), and Formula (3). Further, the molecules of the formulas (1) and (2) can be used also as the light emitting layer.
【0009】[0009]
【化1】 Embedded image
【0010】電子輸送層上に成膜する発光層としては、
式(4)、式(5)などの有機化合物を挙げることがで
きる。式(1)、式(2)の分子を電子輸送層兼発光層
として用いる場合は発光層は形成しなくともよい。さら
に発光層上に形成するホール輸送層としては、式
(6)、式(7)などの有機化合物を挙げることができ
る。The light-emitting layer formed on the electron transport layer includes:
Organic compounds such as formulas (4) and (5) can be given. When the molecules of the formulas (1) and (2) are used as the electron transport layer and the light emitting layer, the light emitting layer may not be formed. Further, examples of the hole transport layer formed on the light emitting layer include organic compounds represented by formulas (6) and (7).
【0011】[0011]
【化2】 Embedded image
【0012】[0012]
【化3】 Embedded image
【0013】[0013]
【化4】 Embedded image
【0014】正極である表示面の透明電極であるITO
の形成は、蒸着、スパッタリング、ゾル−ゲル法などに
より行うことができる。ITOの上層に形成する被覆層
は、SiO2を蒸着、スパッタリング、ゾル−ゲル法な
どにより形成したり、透明な液状樹脂すなわち液体の高
分子前駆体モノマーやオリゴマー、高分子溶液をコーテ
ィングして硬化または乾燥することにより形成すること
ができる。液状樹脂の例としては、アクリルモノマー組
成物、エポキシ樹脂組成物、ポリメチルメタクリレート
溶液などが挙げられるがこれらに限定されるものではな
い。An ITO which is a transparent electrode on the display surface which is a positive electrode
Can be formed by vapor deposition, sputtering, a sol-gel method, or the like. Coating layer formed on the upper layer of the ITO, the SiO 2 deposition, sputtering, sol - or formed by a gel method, the transparent liquid resin i.e. liquid polymer precursor monomers or oligomers, by coating a polymer solution hardening Alternatively, it can be formed by drying. Examples of the liquid resin include, but are not limited to, an acrylic monomer composition, an epoxy resin composition, a polymethyl methacrylate solution, and the like.
【0015】[0015]
【実施例】以下本発明を実施例及び比較例によって説明
するが、本発明は実施例により何ら限定されるものでは
ない。 《実施例1》基板として厚さ100μmのポリイミドフ
ィルム(宇部興産(株)製「ユーピレックスS」)を用
い、Al/Li合金を80nmの厚さに蒸着してパター
ニングし、負電極を形成した。ポリイミドフィルムは光
を透過するものの、濃い褐色であった。その上に電子輸
送層兼発光層として前記式(1)の構造を有する有機化
合物であるAlq3を厚さ100nm蒸着した。さらに
その上にホール輸送層として前記式(7)の構造を有す
る有機化合物であるα−NPDを厚さ100nm蒸着
し、続いてITOを厚さ100nmに微量酸素導入条件
下で蒸着した。さらにSiO2を厚さ20nmにスパッ
タリングで成膜した後、ポリカーボネートの10%塩化
メチレン溶液を塗布して乾燥し、厚さ10μmのコーテ
ィングとし、有機EL素子を作製した。この有機EL素
子の厚さを測定したところ、約110μmであった。こ
の有機EL素子を高さ1mからコンクリート上に落下さ
せたが、外観上の破損は見られなかった。さらに電極に
直流電流を加えたところ、緑色の良好な発光が得られ
た。続いてこの素子を半径10cmの曲率で曲げたが、
外観、発光とも不良は見られなかった。The present invention will be described below with reference to examples and comparative examples, but the present invention is not limited to the examples. Example 1 A 100 μm-thick polyimide film (“UPILEX S” manufactured by Ube Industries, Ltd.) was used as a substrate, and an Al / Li alloy was deposited to a thickness of 80 nm and patterned to form a negative electrode. The polyimide film was light brown, though transmitting light. Alq3, which is an organic compound having the structure of the above formula (1), was deposited thereon to a thickness of 100 nm as an electron transporting layer and a light emitting layer. Further, α-NPD, which is an organic compound having the structure of the above formula (7), was deposited thereon as a hole transport layer by a thickness of 100 nm, and then ITO was deposited to a thickness of 100 nm under a condition of introducing a small amount of oxygen. Further, after forming a film of SiO 2 to a thickness of 20 nm by sputtering, a 10% solution of polycarbonate in methylene chloride was applied and dried to form a coating having a thickness of 10 μm, thereby producing an organic EL device. When the thickness of this organic EL element was measured, it was about 110 μm. The organic EL element was dropped on concrete from a height of 1 m, but no damage was observed in appearance. When a direct current was further applied to the electrode, favorable green light emission was obtained. Subsequently, this element was bent at a radius of curvature of 10 cm.
No defect was observed in both appearance and light emission.
【0016】《実施例2》基板として厚さ300μmの
アルミニウムシートを用い、SiO2を厚さ100nm
にスパッタリングで成膜した後、Al/Li合金を80
nmの厚さに蒸着してパターニングし、負電極を形成し
た。その上に電子輸送層として前記式(3)の構造を有
する有機化合物であるTAZを厚さ60nm、発光層と
して前記式(4)の構造を有する有機化合物であるDP
VBiを厚さ60nm、ホール輸送層として前記式
(6)の構造を有する有機化合物である2Me−TPD
を厚さ60nm蒸着し、続いてITOを厚さ100nm
に微量酸素導入条件下で蒸着した。さらにSiO2を厚
さ20nmにスパッタリングで成膜した後、ポリカーボ
ネートの10%塩化メチレン溶液を塗布して乾燥し、厚
さ10μmのコーティングとし、有機EL素子を作製し
た。この有機EL素子の厚さを測定したところ、約31
0μmであった。この有機EL素子を高さ1mからコン
クリート上に落下させたが、外観上の破損は見られなか
った。さらに電極に直流電流を加えたところ、青色の良
好な発光が得られた。Example 2 An aluminum sheet having a thickness of 300 μm was used as a substrate, and SiO 2 was formed to a thickness of 100 nm.
After forming a film by sputtering, the Al / Li alloy is
A negative electrode was formed by vapor deposition to a thickness of nm and patterning. An organic compound having a structure of the above formula (3), TAZ, having a thickness of 60 nm is formed thereon as an electron transport layer, and an organic compound having a structure of the above formula (4), DP, is formed as a light emitting layer.
2Me-TPD which is an organic compound having a structure of the above formula (6) as a hole transport layer having a thickness of VBi of 60 nm
Is deposited to a thickness of 60 nm, and then ITO is deposited to a thickness of 100 nm.
Under a condition of introducing a small amount of oxygen. Further, after forming a film of SiO 2 to a thickness of 20 nm by sputtering, a 10% solution of polycarbonate in methylene chloride was applied and dried to form a coating having a thickness of 10 μm, thereby producing an organic EL device. When the thickness of this organic EL element was measured, it was found to be about 31
It was 0 μm. The organic EL element was dropped on concrete from a height of 1 m, but no damage was observed in appearance. When a direct current was further applied to the electrode, favorable blue light emission was obtained.
【0017】《比較例》基板として厚さ550μmのガ
ラスを用い、ITOを厚さ100nmにスパッタリング
で成膜した後、パターニングし正電極を形成した。その
上にホール輸送層として前記式(7)の構造を有する有
機化合物であるα−NPDを厚さ100nm蒸着し、続
いて電子輸送層兼発光層として前記式(1)の構造を有
する有機化合物であるAlq3を厚さ100nm蒸着し
た。その上に厚さ300μmのアルミニウム板で成形し
た深さ0.7mmの封止缶をかぶせて周囲をUV硬化樹
脂で止めて有機EL素子を作製した。この有機EL素子
の厚さを測定したところ、約1.3mmであった。この
有機EL素子を高さ1mからコンクリート上に落下させ
たところ、ガラスが破損してしまった。Comparative Example Using a glass substrate having a thickness of 550 μm as a substrate, ITO was formed to a thickness of 100 nm by sputtering, followed by patterning to form a positive electrode. An organic compound having a structure of the above formula (7), α-NPD, having a thickness of 100 nm is deposited thereon as a hole transport layer, and then an organic compound having a structure of the above formula (1) as an electron transport layer and a light emitting layer. Was deposited to a thickness of 100 nm. An organic EL element was fabricated by covering a 0.7 mm deep sealing can formed of an aluminum plate having a thickness of 300 μm thereon and stopping the periphery with a UV curing resin. When the thickness of this organic EL element was measured, it was about 1.3 mm. When the organic EL element was dropped on concrete from a height of 1 m, the glass was broken.
【0018】[0018]
【発明の効果】本発明の有機エレクトロルミネッセンス
素子の製造方法を用いることにより、無色透明の基板を
用いなくても有機EL素子を作製することが可能であ
る。また、ガラス以外の基材として高分子フィルムや金
属板を基板に用いることにより、薄型で、落下しても破
損しにくい素子を作製することができる。さらに高分子
フィルムシート製の基板を用いたこ場合は、曲げても破
損しにくい素子を作製することが可能である。By using the method for producing an organic electroluminescence device of the present invention, an organic EL device can be produced without using a colorless and transparent substrate. In addition, by using a polymer film or a metal plate as a substrate other than glass, an element that is thin and hard to be damaged even when dropped can be manufactured. Further, when a substrate made of a polymer film sheet is used, it is possible to produce an element which is hardly damaged even when bent.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H05B 33/14 H05B 33/14 A ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H05B 33/14 H05B 33/14 A
Claims (4)
覆を行うことを特徴とする有機エレクトロルミネッセン
ス素子の製造方法。1. A method for manufacturing an organic electroluminescent device, comprising forming and coating an electrode on a display surface side without using a substrate.
トロルミネッセンス素子。2. An organic electroluminescent device produced by the method according to claim 1.
覆を行い、裏面基板にガラス以外の基材を使用すること
を特徴とする有機エレクトロルミネッセンス素子。3. An organic electroluminescent device wherein an electrode is formed and coated on a display surface side without using a substrate, and a substrate other than glass is used for a back substrate.
請求項3記載の有機エレクトロルミネッセンス素子。4. The organic electroluminescence device according to claim 3, wherein a polymer film sheet is used for the back substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000216213A JP2002033189A (en) | 2000-07-17 | 2000-07-17 | Method for manufacturing organic electroluminescence element and organic electroluminescence element using it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000216213A JP2002033189A (en) | 2000-07-17 | 2000-07-17 | Method for manufacturing organic electroluminescence element and organic electroluminescence element using it |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002033189A true JP2002033189A (en) | 2002-01-31 |
Family
ID=18711512
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000216213A Pending JP2002033189A (en) | 2000-07-17 | 2000-07-17 | Method for manufacturing organic electroluminescence element and organic electroluminescence element using it |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002033189A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005026193A (en) * | 2003-07-03 | 2005-01-27 | Fuji Electric Holdings Co Ltd | Organic EL light emitting device |
-
2000
- 2000-07-17 JP JP2000216213A patent/JP2002033189A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005026193A (en) * | 2003-07-03 | 2005-01-27 | Fuji Electric Holdings Co Ltd | Organic EL light emitting device |
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