JP2002031818A - Method for manufacturing semiconductor device - Google Patents

Abstract

(57) [Problem] To provide a technique for manufacturing a high-performance electro-optical device using a plastic support. SOLUTION: After bonding a first fixed substrate 101 and an element forming substrate 103 made of a resin substrate with a first adhesive layer,
A TFT element and a pixel electrode are formed on an element forming substrate.
A second adhesive layer 107 is formed on the second
The fixed substrate 106 is attached to hold the liquid crystal material 108. By irradiating a YAG laser in this state, the second adhesive layer 107 is removed, and the first fixed substrate 101 is separated or separated.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a circuit constituted by thin film transistors (hereinafter, referred to as TFTs) and a method for manufacturing the same. For example, the present invention relates to an electro-optical device typified by a liquid crystal display panel and an electronic device equipped with such an electro-optical device as a component.

[0002] In this specification, a semiconductor device generally refers to a device that can function by utilizing semiconductor characteristics, and an electro-optical device, a semiconductor circuit, and an electronic device are all semiconductor devices.

[0003]

2. Description of the Related Art In recent years, a technique of forming a thin film transistor (TFT) using a semiconductor thin film (having a thickness of several to several hundred nm) formed on a substrate having an insulating surface has attracted attention. Thin film transistors are widely applied to electronic devices such as ICs and electro-optical devices, and are particularly rapidly developed as switching elements for image display devices.

Various applications using such an image display device are expected, and use of such devices for portable devices is particularly attracting attention. Therefore, it has been attempted to form a TFT element on a flexible plastic film.

[0005] However, since the heat resistance of the plastic film is low, the maximum temperature of the process must be lowered, and as a result, it is impossible to form a TFT having better electric characteristics as when formed on a glass substrate. . Therefore, a high-performance liquid crystal display device using a plastic film has not been realized.

Japanese Patent Application Laid-Open No. 8-288522 describes a technique in which a thin film transistor is formed on a glass substrate, a resin substrate is bonded via a sealing layer, and then the glass substrate is peeled off. When this technology is used, TFT
Active layer is only protected by the base insulating film,
There has been a problem that the TFT is easily deteriorated.

In Japanese Patent Application Laid-Open No. H11-243209, after a separation layer is provided, separation is caused in the separation layer by a laser beam, and then the first transfer body is bonded via an adhesive layer. After joining the secondary transfer body,
Techniques for removing the primary transfer are described. Even when this technique is used, there is a problem that the active layer of the TFT is protected only by the base insulating film during the manufacturing process, so that the TFT is easily damaged and the TFT is easily deteriorated.

[0008]

SUMMARY OF THE INVENTION An object of the present invention is to provide a technique for manufacturing a high-performance electro-optical device using a plastic support (including a flexible plastic film or a plastic substrate). And

[0009]

SUMMARY OF THE INVENTION According to the present invention, an element forming substrate made of a plastic support is adhered to a first fixing substrate having heat resistance as compared with plastic with a first adhesive layer, and then the element forming substrate is bonded. A required element is formed on the element, a second fixed substrate is bonded to the element with a second adhesive layer, the liquid crystal material is sealed and held, and then the first fixed substrate is separated.

[0010] The necessary elements refer to a semiconductor element (typically a TFT) or an MIM element used as a pixel switching element in the case of an active matrix type electro-optical device.

The method for bonding the first fixed substrate and the element forming substrate is not particularly limited, but as shown in FIG. 1, after the first adhesive layer is formed on the first fixed substrate, the element forming substrate is bonded. Or a method of forming the first adhesive layer on the element forming substrate and then bonding the first fixed substrate.

As the element forming substrate and the second fixed substrate made of a plastic support, a resin substrate having a thickness of 10 μm or more, for example, PES (polyethylene sulfide),
PC (polycarbonate), PET (polyethylene terephthalate) or PEN (polyethylene naphthalate) can be used. After forming an adhesive layer on the first fixed substrate, an organic resin layer (polyimide layer, polyamide layer, polyimide amide layer, BCB (benzocyclobutene) layer, etc.) was formed thereon to form an element. It may be called a substrate.

Further, as the element forming substrate, a metal substrate,
For example, a stainless steel substrate can be used. In that case, a required element may be formed by forming a base insulating film over a metal substrate. By using a thin metal substrate (thickness: 10 to 200 μm), it is possible to obtain a reflection-type liquid crystal display device which can be reduced in weight and thickness and has flexibility.

The separation of the first fixed substrate is performed after forming necessary elements on the element forming substrate and bonding the second fixed substrate. A method of vaporizing all or a part of the layer is used. Also, instead of laser beam irradiation, for example, a method of separating the first fixed substrate by etching described in Japanese Patent Application Laid-Open No. 8-288522, or a method of applying a fluid (liquid under pressure) to the first adhesive layer Alternatively, a method (typically, a water jet method) of separating the first fixed substrate by injecting a gas may be used, or a combination thereof may be used.

As the laser light, a pulse oscillation type or continuous emission type excimer laser, YAG laser, YV
An O ₄ laser can be used. As shown in FIG. 3D, a laser beam is passed through the first fixed substrate from the back surface and irradiates the first adhesive layer to vaporize only the first adhesive layer, thereby separating or separating the first fixed substrate. Therefore, as the first fixed substrate, at least a substrate through which a laser beam to be irradiated passes, typically, a substrate having a light-transmitting property, such as a glass substrate or a quartz substrate, is used. Is preferred.

In the present invention, since the laser beam passes through the first fixed substrate, it is necessary to appropriately select the type of the laser beam and the first fixed substrate. For example, if a quartz substrate is used as the first fixed substrate, a YAG laser (a fundamental wave (1064 nm), a second harmonic (532 nm), a third harmonic (355 nm), a fourth harmonic (266 nm), or an excimer laser) (Wavelength: 308 nm), a linear beam may be formed and passed through a quartz substrate, and an excimer laser does not pass through a glass substrate, so that if a glass substrate is used as the first fixed substrate, a YAG laser is used. A linear beam may be formed using the fundamental wave, the second harmonic, or the third harmonic, preferably using the second harmonic (wavelength: 532 nm), and may be transmitted through the glass substrate.

Further, an organic material is used as the first adhesive layer,
Preferably, a laser beam which is entirely or partially vaporized by the irradiated laser beam is used. In order to efficiently absorb laser light only in the first adhesive layer, the first adhesive layer has a property of absorbing laser light, for example, when a second harmonic of a YAG laser is used, it is colored or black. (For example, a resin material containing a black colorant) is preferably used. However, a material that does not vaporize by heat treatment in the element formation step is used for the first adhesive layer. Further, the first adhesive layer may be a single layer or a stacked layer, and may have a structure in which an amorphous silicon film or a DLC film is provided between the first adhesive layer and the element formation substrate as shown in FIG. .

With this configuration, the thickness of the element forming substrate is very small, specifically, 50 μm to 3 μm.
Even with a substrate having a thickness of 00 μm, preferably 150 μm to 200 μm, a highly reliable liquid crystal display device can be obtained. In addition, although it was difficult to form an element on such a thin substrate using a known known manufacturing apparatus, the present invention is intended to perform element formation by bonding to a first fixed substrate. In addition, a manufacturing apparatus using a thick substrate can be used without modifying the apparatus. Also,
During the element formation step, the heat resistance of the element formation substrate can be improved by holding the element formation substrate between the insulating film formed on the element formation substrate and the first fixed substrate.

According to the structure of the invention disclosed in this specification, a first fixed substrate and an element forming substrate are bonded to each other with a first adhesive layer provided on the element forming substrate, and the insulating is performed after the element forming substrate is bonded. A TFT element and a pixel electrode are formed on the insulating film, and a second adhesive layer is formed on the pixel electrode with a second adhesive layer.
A method for manufacturing a semiconductor device, comprising: after bonding a fixed substrate, removing the first adhesive layer by irradiating a laser beam to separate the first fixed substrate.

In another aspect of the invention, a first fixed substrate and an element forming substrate are attached to each other with a first adhesive layer provided on the fixed substrate, and an insulating film is formed after the element forming substrate is attached. Forming a TFT element and a pixel electrode on the insulating film, bonding a second fixed substrate on the pixel electrode with a second adhesive layer, and removing the first adhesive layer by irradiating a laser beam; And separating the first fixed substrate.

In each of the above structures, a liquid crystal material is provided between the pixel electrode and the second fixed substrate, and the liquid crystal material is used for bonding the element forming substrate and the second fixed substrate to each other. (E.g., a sealing material).

In each of the above structures, an amorphous silicon thin film may be formed between the element forming substrate and the first adhesive layer. Further, a diamond-like carbon thin film may be formed between the element forming substrate and the first adhesive layer.

In each of the above structures, the first adhesive layer may be colored or black using a pigment or a dye to absorb the laser beam.

In each of the above structures, the element forming substrate and the second fixed substrate are characterized by being supports (including a flexible plastic film or a plastic substrate) made of an organic resin. Further, as the element forming substrate and the second fixed substrate, those having a smaller thickness than the first fixed substrate are used.

Further, in each of the above structures, the laser beam is irradiated by forming a linear beam and scanning the laser beam, and the laser beam is a pulse oscillation type or continuous emission type excimer laser. Alternatively, a YAG laser or a YVO ₄ laser can be used.

Further, in each of the above structures, the laser light is applied by passing the first fixed substrate from the back side of the first fixed substrate through the first fixed substrate and providing the laser light on the front surface of the first fixed substrate. The method is characterized in that the laser beam is applied to one adhesive layer. Therefore, it is preferable that the first fixed substrate transmits a laser beam to be used.

The semiconductor device described in each of the above structures is a transmission type liquid crystal display device or a reflection type liquid crystal display device.

[0028]

Embodiments of the present invention will be described below.

First, the first fixed substrate 101 and the element forming substrate 103 are bonded. As shown in FIG. 1, there are two bonding methods.

The first method is to provide the first adhesive layer 102 on the first fixed substrate 101 and then bond the first fixed substrate 101 and the element forming substrate 103 together. (Figure 1
(A1)) The state after bonding is shown in FIG. 1 (B1).

In the second method, the element forming substrate 10
3, after the first adhesive layer 102 is provided, the first fixed substrate 101
And the element formation substrate 103.
(FIG. 1 (A2)) The state after bonding is shown in FIG.
It was shown in 2).

Although not shown here, after forming a first adhesive layer on a first fixed substrate, an organic resin layer (polyimide layer, polyamide layer, polyimide amide layer, etc.) is formed thereon. It may be equivalent to an element forming substrate.

As shown in FIG. 2A, an a-Si (amorphous silicon) layer 202A may be provided between the first adhesive layer 202B and the element forming substrate 203. In a later step, the first fixed substrate 201 may be separated by irradiating the a-Si layer with a laser beam. It is preferable to use an a-Si layer containing a large amount of hydrogen so that the first fixed substrate 201 is easily separated or separated. By irradiating a laser beam, hydrogen contained in the a-Si layer is vaporized to separate or separate the first fixed substrate.

As shown in FIG. 2B, a DLC film (specifically, a diamond-like carbon film) for protecting the element formation substrate 206 is provided between the first adhesive layer 205B and the element formation substrate 206. ) May be provided. The first
The fixed substrate 204 is the first fixed substrate 101 shown in FIG.
Is the same as

In this case, a device in which one or both surfaces of the element forming substrate are coated with a DLC film as a protective film with a thickness of 2 to 50 nm may be used. Note that the DLC film may be formed by a sputtering method or an ECR plasma CVD method. The characteristics of the DLC film has a peak of asymmetric about 1550 cm ^-1, a Raman spectrum distribution with a shoulder around 1300 cm ^-1. Further, it has a feature of exhibiting a hardness of 15 to 25 GPa when measured with a micro hardness tester. Such a carbon film has a role of preventing oxygen and water from entering and protecting the surface of the resin substrate.
Thus, it is possible to prevent a substance that promotes deterioration due to moisture, oxygen, or the like from entering from the outside. Therefore, a highly reliable liquid crystal display device can be obtained.

As shown in FIG. 2C, a first DLC film 208A for protecting the element forming substrate and a first fixed substrate 207 are provided between the first adhesive layer 208C and the element forming substrate 209. A second DLC film 208B for facilitating separation or separation may be provided. Such first
As the DLC film 208A, a film formed under hydrogen-free film formation conditions may be used, and as the second DLC film 208B, a film formed under hydrogen-containing film formation conditions may be used. Also,
By irradiating the second DLC film 208B with a laser beam, the hydrogen contained in the film is vaporized to form the first fixed substrate 207.
May be separated or separated.

FIG. 3 (A) shows the state after bonding obtained by each of the above methods. Here, FIG. 1 (B1)
And the same as those in FIG. 1 (B2). Note that the same reference numerals as those in FIGS. 1B1 and 1B2 are used.

Next, after forming a base insulating film on the element forming substrate 103, necessary elements are formed on the base insulating film. Here, an example is shown in which a driving circuit 104 and a pixel portion 105 including a TFT element and a pixel electrode are formed. (FIG. 3
(B))

Next, a second fixed substrate (counter substrate) 106
Are bonded together with a second adhesive layer (sealant) 107. (FIG. 3C) Next, the liquid crystal material 108 is sealed and held. Second
As the fixed substrate 106, a resin substrate may be used, and a substrate provided with a DLC film as a protective film on one surface or both surfaces may be used.

Next, the first fixed substrate 101 is separated by irradiating a laser beam from the back side to vaporize all or a part of the first adhesive layer 102. (FIG. 3D) Therefore, the first
For the adhesive layer 102, a substance which causes a peeling phenomenon in a layer or at an interface by laser light is used. Further, a laser beam that passes through the first fixed substrate 101 and is absorbed by the first adhesive layer is appropriately selected. For example, if a quartz substrate is used as the first fixed substrate, a YAG laser (basic wave (1
064 nm), the second harmonic (532 nm), the third harmonic (355 nm), the fourth harmonic (266 nm) or an excimer laser (wavelength 308 nm) to form a linear beam and pass through a quartz substrate. Good. Note that the excimer laser does not pass through the glass substrate. Therefore, if a glass substrate is used as the first fixed substrate, a fundamental wave, a second harmonic, and a third harmonic of a YAG laser can be used, and a linear wave is preferably formed using the second harmonic (wavelength 532 nm). What is necessary is just to form a beam and let it pass through a glass substrate.

The step of separating the first fixed substrate by laser irradiation may be performed after the second fixed substrate is bonded, and may be performed before injecting and sealing the liquid crystal.

Finally, a liquid crystal display device in which a liquid crystal material is sandwiched between an element forming substrate as a resin substrate and a second fixed substrate as a resin substrate is completed.

As shown in FIG. 17, the element forming substrate 103, which is a resin substrate, and the second fixed substrate 106, which is a resin substrate, have an element forming layer (liquid crystal material, pixel electrode, and TF).
The liquid crystal display device with the T element (including the T element) interposed therebetween has flexibility that does not break even if some stress is generated. FIG. 17A shows a state when no curvature is given, and FIG. 17B shows a state when a curvature is given. In FIG. 17B, a compressive stress acts on the element forming substrate and a tensile stress acts on the second fixed substrate, but the stress hardly acts on the element forming layer, and the expansion and contraction in the central portion is ± 1 μm or less. It can be. It should be noted that there is no problem even if the curvature radius is given up to 10 cm.

The present invention having the above configuration will be described in more detail with reference to the following embodiments.

[0045]

[Embodiment 1] In this embodiment, an example of a method for manufacturing a liquid crystal display device in which a liquid crystal material is sandwiched between an element forming substrate as a resin substrate and a second fixed substrate as a resin substrate will be described with reference to FIG. Shown below. Here, all the steps are performed at 350 ° C. or less,
Preferably, it is performed at 200 ° C. or lower. However, it goes without saying that the present invention is not limited to this embodiment.

First, a glass substrate is used as the first fixed substrate 101. Then, the first fixed substrate 101 and the element forming substrate 103 which is a resin substrate were bonded to each other with the first adhesive layer 102 by using any of the methods described in the embodiments.
(FIG. 3 (A))

Next, after forming a base insulating film on the element forming substrate 103, necessary elements are formed on the base insulating film. Here, an example is shown in which a driving circuit 104 and a pixel portion 105 including a TFT element and a pixel electrode are formed. (FIG. 3
(B))

As a base insulating film, a silicon oxynitride film containing more nitrogen than oxygen in the film composition and a film containing more oxygen than nitrogen in the film composition are formed by a sputtering method capable of forming a film at a low temperature. A silicon oxynitride film was stacked.

Next, a semiconductor layer is formed on the base insulating film. Although the material of the semiconductor layer is not limited, preferably, silicon or silicon germanium (Si _x Ge _1-x (0 <X
<1)) It is good to form with an alloy etc. In this embodiment, an amorphous silicon film is formed by a sputtering method capable of forming a film at a low temperature, and a crystalline silicon film is formed by a laser crystallization method. When a crystalline semiconductor film is formed by a laser crystallization method, a pulse oscillation type or continuous emission type excimer laser, a YAG laser, or a YVO ₄ laser can be used.

Next, a gate insulating film covering the semiconductor layer is formed. In this embodiment, a silicon oxide film is formed by a sputtering method capable of forming a film at a low temperature.

Next, a conductive layer is formed on the gate insulating film. The conductive layer is formed by forming a conductive film by a known means (a thermal CVD method, a plasma CVD method, a reduced pressure thermal CVD method, an evaporation method, a sputtering method, or the like), and then patterning the conductive film into a desired shape using a mask. I do.

Next, an impurity element for imparting n-type or an impurity element for imparting p-type is appropriately added to the semiconductor layer by ion implantation or ion doping, and LDD is performed.
An impurity region which forms a region, a source region, and a drain region is formed.

After that, an interlayer insulating film is formed using a silicon nitride film, a silicon nitride oxide film, or a silicon oxide film manufactured by a sputtering method. The added impurity element is activated. Here, laser light irradiation was performed. Activation may be performed by heat treatment at 350 ° C. or lower instead of laser light irradiation.

Next, after forming a contact hole reaching the source region or the drain region by using a known technique, a source electrode or a drain electrode is formed to obtain a TFT.

Next, hydrogenation is performed using a known technique, and the whole is hydrogenated to complete an n-channel TFT or a p-channel TFT. In this embodiment, the hydrogenation treatment is performed using hydrogen plasma which can be performed at a relatively low temperature.

Next, an interlayer insulating film is formed using a silicon nitride film, a silicon nitride oxide film, or a silicon oxide film manufactured by a sputtering method. Next, after forming a contact hole reaching the drain electrode of the pixel portion by using a known technique, a pixel electrode made of a transparent conductive film such as ITO or SnO ₂ is formed. In this embodiment, an example of a transmissive liquid crystal display device is described as an example, but there is no particular limitation. For example, a reflective liquid crystal display device can be manufactured by using a reflective metal material as a material of a pixel electrode and changing the patterning of the pixel electrode or adding / deleting some steps as appropriate. .

Next, all the elements included in the pixel portion and the drive circuit are covered with an insulating film (such as an alignment film).

Next, an insulating film covering all the elements formed on the element forming substrate and the second fixed substrate 106 are bonded with a second adhesive layer (sealant) 107. Thereafter, a liquid crystal material is injected and sealed. (FIG. 3C) Second fixed substrate 10
As for 6, a resin substrate may be used. A resin substrate provided with a DLC film as a protective film on one or both sides is used, and is provided with a counter electrode and an alignment film for aligning liquid crystal.

Next, the first fixed substrate 101 is separated by irradiating a laser beam from the back side to vaporize all or a part of the first adhesive layer 102. (FIG. 3D) In this embodiment, since a glass substrate is used as the first fixed substrate, YA
The fundamental wave, the second harmonic, and the third harmonic of the G laser are used. Here, a linear beam was formed using a second harmonic (wavelength: 532 nm), and the first adhesive layer was irradiated by passing through a glass substrate serving as the first fixed substrate 101.

Finally, a liquid crystal display device in which a liquid crystal material is held by an element forming substrate as a resin substrate and a second fixed substrate as a resin substrate is completed. Each film (an insulating film, a semiconductor film, a conductive film, or the like) is formed by a sputtering method, and all processes can be performed at 350 ° C. or lower, preferably 200 ° C. or lower.

[Embodiment 2] In this embodiment, a p-channel type T
This is an example of manufacturing an FT, which will be described with reference to FIGS.

First, the first fixed substrate 401 and the first adhesive layer 4
A base insulating film 404 is formed over the element formation substrate 403 attached with 02 (separation layer). As the base insulating film 404, a silicon oxide film, a silicon nitride film, a silicon nitride oxide film (SiOxNy), a laminated film of these, or the like is used.
The film can be used in a thickness range of 0 to 500 nm. As a forming means, a forming method such as a thermal CVD method, a plasma CVD method, an evaporation method, a sputtering method, and a reduced pressure thermal CVD method can be used.

In this embodiment, a silicon oxynitride film containing more nitrogen than oxygen in the film composition and an oxide containing more oxygen than nitrogen in the film composition are formed by a sputtering method capable of forming a film at a low temperature. A silicon nitride film was stacked.

The first fixed substrate 401 and the first adhesive layer 4
Any element manufactured by the method described in the above embodiment can be applied to the element formation substrate 403 attached with 02 (separation layer).

Next, a semiconductor layer 405 is formed over the base insulating film. The semiconductor layer 405 is formed by forming a semiconductor film having an amorphous structure by a known means (a thermal CVD method, a plasma CVD method, a low-pressure thermal CVD method, an evaporation method, a sputtering method, or the like), and then performing a known crystallization treatment. (A laser crystallization method, a thermal crystallization method, a thermal crystallization method using a catalyst such as nickel, or the like), and the crystalline semiconductor film obtained is patterned into a desired shape. The thickness of the semiconductor layer 405 is 20 to 100 nm (preferably 30 to 60 nm). The material of the crystalline semiconductor film is not limited, but is preferably silicon or silicon germanium (Si _x
It is preferable to use a Ge _1-X (0 <X <1)) alloy or the like.
In this embodiment, an amorphous silicon film is formed by a sputtering method capable of forming a film at a low temperature, and a crystalline silicon film is formed by a laser crystallization method. When a crystalline semiconductor film is formed by a laser crystallization method, a pulse oscillation type or continuous emission type excimer laser, a YAG laser, a YVO ₄
Lasers can be used.

After the formation of the semiconductor layer 405, TF
In order to control the threshold value of T, a small amount of impurity element (boron or phosphorus) may be doped.

Next, a gate insulating film 406 covering the semiconductor layer 405 is formed. The gate insulating film 406 is made of plasma C
Using the VD method or the sputtering method, the thickness is 40 to 150 n
m is formed of an insulating film containing silicon. In this embodiment, a silicon oxide film is formed by a sputtering method capable of forming a film at a low temperature. (FIG. 4 (A))

Next, the conductive layer 4 is formed on the gate insulating film 406.
08 is formed. The conductive layer 408 is formed by forming a conductive film by a known method (a thermal CVD method, a plasma CVD method, a low-pressure thermal CVD method, an evaporation method, a sputtering method, or the like), and then using a mask 407 to pattern the conductive film into a desired shape. Formed. As a material of the conductive layer 408, Ta, W, Ti, M
It may be formed of an element selected from o, Al, Cu, Cr, and Nd, or an alloy material or a compound material containing the element as a main component. Alternatively, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus may be used. Further, an AgPdCu alloy may be used. In this embodiment, a W film is formed and patterned by a sputtering method capable of forming a film at a low temperature. The end of the conductive layer 408 is formed in a tapered shape. The etching conditions may be appropriately determined. For example, in the case of W, etching can be favorably performed by using a mixed gas of CF ₄ and Cl ₂ and negatively biasing the substrate.

Next, as shown in FIG. 4B, an impurity region (p + region) 409 for forming source and drain regions in a self-aligned manner is formed. This impurity region (p +
The region 409 is formed by an ion doping method, and is doped with an element of Group 13 of the periodic table represented by boron.
The impurity concentration of the impurity region (p + region) 409 is 1 × 1
The range is from 0 ^{20 to} 2 × 10 ²¹ / cm ³ .

Next, as shown in FIG.
8 is etched so that the end of the conductive layer 410 is set back.
To form In the structure of this embodiment, this is used as a gate electrode. Two etching steps are used to form the gate electrode, and the etching conditions are appropriately determined. For example, in the case of W can be a mixed gas of CF ₄ and Cl _2, better end by biasing the substrate to negative is processed into a tapered shape. CF ₄ and C
By mixing oxygen with l ₂ , anisotropic etching of W can be performed with good selectivity to the base.

Thereafter, as shown in FIG.
Using p-type impurity (acceptor) as a mask 410
And impurity regions (p-regions) 41 in a self-aligned manner.
Form one. Impurity of impurity region (p-region) 411
The concentration is 1 × 10¹⁷~ 2 × 10 ¹⁹/ Cm^ThreeRange
To do.

Thereafter, a sputtering method or a plasma CVD
An interlayer insulating film 413 is formed using a silicon nitride film or a silicon nitride oxide film manufactured by a method. The added impurity element is subjected to heat treatment at 350 to 500 ° C. or laser light irradiation for activation. Further, after forming a contact hole reaching the impurity region (p + region) using a known technique, the source electrode or the drain electrode 4 is formed.
14 are formed to obtain a TFT.

Finally, hydrogenation is performed using a known technique, and the whole is hydrogenated to complete a p-channel TFT.
(FIG. 4E) In this embodiment, the hydrogenation treatment was performed using hydrogen plasma which can be performed at a relatively low temperature.

An LDD (Lightly Doped) formed of a channel forming region 412 and an impurity region (p− region) is formed in the semiconductor layer.
A source or drain region 409 formed of a ped drain region 411 and an impurity region (p + region) is formed. Here, the p-channel TFT is shown with an LDD structure, but it can be of course also manufactured with a single drain or a structure in which the LDD overlaps with the gate electrode. A basic logic circuit can be formed using the p-channel type TFT described in this embodiment, or a more complicated logic circuit (a signal division circuit, a D / A converter, an operational amplifier, a gamma correction circuit, and the like) can be formed. Further, a memory or a microprocessor may be formed. For example, all the driving circuits of the liquid crystal display device can be configured by p-channel TFTs.

This embodiment can be combined with the first embodiment.

[Embodiment 3] In this embodiment, an n-channel type T
This is an example of manufacturing an FT, which will be described with reference to FIGS. Note that FIGS. 4A and 5A are the same, and thus the same reference numerals are used and description of the manufacturing process is omitted here.

After obtaining the state of FIG. 5A according to the second embodiment, a resist mask 415 is formed by a light exposure process.
Is formed, and the semiconductor film 405 is doped with an n-type impurity (donor) by ion implantation or ion doping. (FIG. 5B) Impurity region (n-region) to be manufactured
At 416, the doping concentration is between 1 × 10 ¹⁷ and
The range is set to 2 × 10 ¹⁹ / cm ³ .

Next, on the insulating film 406, tantalum,
The gate electrode 417 is formed using a conductive material containing one or more elements selected from tungsten, titanium, aluminum, and molybdenum. (FIG. 5C) A part of the gate electrode 417 is formed so as to partially overlap with the impurity region (n− region) 416 via the gate insulating film.

Thereafter, as shown in FIG. 5D, an n-type impurity (donor) is doped using the gate electrode 417 as a mask, and the impurity region (n + region) 41 is self-aligned.
8 is formed. The impurity concentration of the impurity region (n + region) 418 is set to be in a range of 1 × 10 ¹⁷ to 2 × 10 ¹⁹ / cm ³ .

After that, an interlayer insulating film 419 is formed using a silicon nitride film and a silicon nitride oxide film manufactured by a plasma CVD method. The added impurity element is subjected to heat treatment at 350 to 500 ° C. or laser light irradiation for activation. Further, after forming a contact hole reaching the impurity region (n + region) by using a known technique, a source electrode or a drain electrode 420 is formed, and TF
Get T.

Finally, hydrogenation is performed by using a known technique, and the whole is hydrogenated to complete an n-channel TFT.
(FIG. 5E) In this example, the hydrogenation treatment was performed using hydrogen plasma which can be performed at a relatively low temperature.

In the semiconductor layer, an LDD (Lightly Doped) formed by a channel forming region 419 and an impurity region (n-region) is formed.
A source or drain region 418 formed by a ped drain region 416 and an impurity region (n + region) is formed. Further, the LDD region 416 is formed so as to overlap with the gate electrode 417, and the concentration of the electric field at the drain end is reduced, thereby preventing deterioration due to hot carriers. Of course, an n-channel TFT having a single drain or LDD structure can also be manufactured. A basic logic circuit can be formed using the n-channel TFT shown in this embodiment, or a more complicated logic circuit (a signal division circuit, a D / A converter, an operational amplifier, a gamma correction circuit, and the like) can be formed. Further, a memory or a microprocessor may be formed. For example, all the driving circuits of the liquid crystal display device can be configured by n-channel TFTs.

This embodiment can be combined with the first embodiment.

[Embodiment 4] In this embodiment, an n-channel type T
C that complementarily combines FT and p-channel TFT
This is an example of manufacturing a MOS circuit, which will be described with reference to FIGS.

According to the second embodiment, after a base insulating film is formed on an element forming substrate bonded to a first fixed substrate and a first adhesive layer (separation layer), semiconductor layers 501 and 502 are formed.
(FIG. 6 (A))

Next, the gate insulating film 5 is formed by sputtering.
03, a first conductive film 504, and a second conductive film 505 are formed. (FIG. 6B) In this embodiment, the first conductive film 504 is formed of tantalum nitride or titanium to a thickness of 50 to 100 nm, and the second conductive film 505 is formed of tungsten to 100 to 3 nm.
It is formed to a thickness of 00 nm.

Next, as shown in FIG. 6C, a mask 506 made of a resist is formed, and a first etching process for forming a gate electrode is performed. There is no limitation on the etching method, but preferably, ICP (Inductively Coupled Plas) is used.
ma: Inductively coupled plasma) etching method is used. Mixture of CF ₄ and Cl ₂ as etching gas, 0.5～2P
a, preferably 500 at the pressure of 1 Pa
The plasma is generated by applying RF (13.56 MHz) power of W. 100W on substrate side (sample stage)
(13.56 MHz) power, and a substantially negative self-bias voltage is applied. When CF ₄ and Cl ₂ are mixed, etching can be performed at substantially the same rate even in the case of a tungsten film, a tantalum nitride film, and a titanium film.

Under the above etching conditions, the end can be tapered due to the shape of the resist mask and the effect of the bias voltage applied to the substrate side. The angle of the tapered portion is set to 15 to 45 °. In order to perform etching without leaving a residue on the gate insulating film, the etching time may be increased by about 10 to 20%. Since the selectivity of the silicon oxynitride film to the W film is 2 to 4 (typically 3), the exposed surface of the silicon oxynitride film is etched by about 20 to 50 nm by the over-etching process. Thus, the first
The first shape conductive layers 507 and 508 (the first conductive layer 50) including the first conductive film and the second conductive film
7a, 508a and second conductive layers 507b, 508b) are formed. Reference numeral 509 denotes a gate insulating film, and a region which is not covered with the first shape conductive layer is etched to be thin by about 20 to 50 nm.

Next, a second etching process is performed while keeping the resist mask as it is, as shown in FIG. Etching is performed using ICP etching method.
Mix CF ₄ , Cl ₂ and O ₂ in the etching gas
RF power of 500 W (1
(3.56 MHz) to generate plasma. 50 W RF (13.56 MH) on the substrate side (sample stage)
z) Power is applied and a self-bias voltage lower than that in the first etching process is applied. Under such conditions, the tungsten film is anisotropically etched so that the tantalum nitride film or the titanium film as the first conductive layer is left. Thus, the second shape conductive layers 509 and 510 (first
Conductive films 509a and 510a and a second conductive film 509b,
510b) is formed. 511 is a gate insulating film,
Regions not covered by the second shape conductive layers 509 and 510 were removed. Here, an example in which the insulating film is removed is shown, but the insulating film may be left thin.

Then, a first doping process is performed to dope an n-type impurity (donor). (FIG. 7 (A))
The method is performed by an ion doping method or an ion implantation method. As the impurity element imparting n-type, an element belonging to Group 15 of the periodic table, typically, phosphorus (P) or arsenic (As) is used. In this case, the second shape conductive layers 509b and 510b serve as a mask for the element to be doped, and the acceleration voltage is appropriately adjusted (for example, 70 to 120 keV), so that the gate insulating film 511 and the second conductive film 509a are formed. An impurity region (n-region) 512 is formed by the impurity element that has passed through the tapered portion 510a. For example, the concentration of phosphorus (P) in the impurity region (n− region) is 1 × 10 ¹⁷ to 1 × 10 ^19.
/ Cm ³ .

Next, after removing the mask, the mask 51 is removed.
3 is formed, and a second doping process is performed as shown in FIG. An n-type impurity (donor) is doped under a condition that the dose is higher than that of the first doping process and the acceleration voltage is low. For example, the acceleration voltage is set to 20 to 60 keV,
An impurity region (n + region) 514 is formed at a dose of 1 × 10 ^{13 to} 5 × 10 ¹⁴ / cm ² . For example, the phosphorus (P) concentration in the impurity region (n + region) is 1 × 10
The range is from ²⁰ to 1 × 10 ²¹ / cm ³ .

Then, after removing the resist, FIG.
As shown in (C), a mask 515 made of resist is formed, and the island-shaped semiconductor layer 50 for forming a p-channel TFT is formed.
1 is doped with a p-type impurity (acceptor). Typically, boron (B) is used. The impurity concentration of the impurity regions (p + regions) 516 and 517 is 2 × 10 ²⁰ to 2 × 1
0 ²¹ / cm ^3, and the contained phosphorus concentration of 1.
The conductivity type is reversed by adding 5 to 3 times boron.

Through the above steps, impurity regions are formed in the respective island-like semiconductor layers. A second shape conductive layer 509,
Reference numeral 510 is a gate electrode. After that, as illustrated in FIG. 7D, a protective insulating film 518 including a silicon nitride film or a silicon oxynitride film is formed by a plasma CVD method.
Then, a step of activating the impurity element added to each of the island-shaped semiconductor layers is performed for the purpose of controlling the conductivity type.

Further, a silicon nitride film 519 is formed,
Perform hydrotreating. In this embodiment, the hydrogenation treatment is performed using hydrogen plasma which can be performed at a relatively low temperature.

The interlayer insulating film 520 is formed of an organic insulating material such as polyimide and acrylic. Of course, plasma C
Although a silicon oxide film formed using TEOS (Tetraethyl Ortho silicate) by the VD method may be used, it is preferable to use the organic material from the viewpoint of improving flatness.

Next, a contact hole is formed, and aluminum (Al), titanium (Ti), tantalum (Ta) is formed.
The source wiring or the drain wiring 521 to 521
523 are formed.

Through the above steps, a CMOS circuit in which an n-channel TFT and a p-channel TFT are complementarily combined can be obtained.

[0098] The p-channel TFT has a channel formation region 524 and impurity regions 516 and 517 functioning as a source region or a drain region.

In an n-channel type TFT, a channel formation region 525 and an impurity region 512 a overlapping with the gate electrode 510 are formed.
(Gate Overlapped Drain: GOLD region), an impurity region 512b (LDD region) formed outside the gate electrode, and an impurity region 514 functioning as a source region or a drain region.

Such a CMOS circuit makes it possible to form a driving circuit for an active matrix type liquid crystal display device. In addition, such an n-channel type T
The FT or p-channel TFT can be applied to a transistor forming a pixel portion.

A basic logic circuit can be formed by combining such CMOS circuits, or a more complicated logic circuit (signal division circuit, D / A converter, operational amplifier,
γ correction circuit), and a memory or a microprocessor can be formed.

This embodiment can be combined with the first embodiment.

[Embodiment 5] The n-channel type T shown in Embodiment 3
FT is the value of 15 in the periodic table for a semiconductor to be a channel formation region.
Group element (preferably phosphorus) or 1 of the periodic table
By adding an element belonging to Group 3 (preferably boron), an enhancement type and a depletion type can be separately formed.

When an NMOS circuit is formed by combining n-channel TFTs, an enhancement type TF
When formed by T (hereinafter referred to as EEMOS circuit)
And an enhancement type and a depletion type (hereinafter referred to as an EDMOS circuit).

Here, an example of the EEMOS circuit is shown in FIG.
FIG. 8B shows an example of the EDMOS circuit. FIG.
In (A), reference numerals 31 and 32 denote enhancement type n-channel TFTs (hereinafter, referred to as E-type NTFTs). In FIG. 8B, reference numeral 33 denotes an E-type N
TFT, 34 is a depletion type n-channel type TFT
(Hereinafter, referred to as D-type NTFT).

In FIGS. 8A and 8B, VDH
Denotes a power supply line to which a positive voltage is applied (positive power supply line);
DL is a power supply line to which a negative voltage is applied (negative power supply line).
The negative power supply line may be a ground potential power supply line (ground power supply line).

FIG. 9 shows an example in which a shift register is manufactured using the EEMOS circuit shown in FIG. 8A or the EDMOS circuit shown in FIG. 8B. In FIG. 9, reference numerals 40 and 41 are flip-flop circuits. Also,
Reference numerals 42 and 43 denote E-type NTFTs. A clock signal (CL) is input to the gate of the E-type NTFT 42 and the E-type NTFT
The gate of the FT 43 has a clock signal (C
L bar) is input. The symbol indicated by 44 is an inverter circuit, and as shown in FIG.
The EEMOS circuit shown in FIG. 8A or the EDMOS circuit shown in FIG. Therefore, it is also possible to configure all the driving circuits of the liquid crystal display device with n-channel TFTs.

This embodiment corresponds to the first embodiment or the third embodiment.
It is possible to combine with

[Embodiment 6] Here, an example in which a liquid crystal display device is manufactured using the TFTs obtained in Embodiments 2 to 5 will be described below with reference to FIGS.

FIG. 10 shows an example of a liquid crystal display device having a pixel portion and a driving circuit for driving the pixel portion on the same insulator (however, before liquid crystal material sealing). Note that the driving circuit shows a CMOS circuit as a basic unit, and the pixel portion shows one pixel. The CMOS circuit and the TFT of the pixel portion are the same as those of the fourth embodiment.
It can be obtained by following.

In FIG. 10, reference numeral 601 denotes a first fixed substrate;
Reference numeral 602 denotes a first adhesive layer, 603 denotes an element forming substrate, on which an n-channel TFT 605 and a p-channel TF
Drive circuit 608 composed of T604, n-channel TFT
The pixel TFT 606 and the storage capacitor 607 are formed. Further, in this embodiment, all the TFTs are formed of top gate type TFTs.

The description of the p-channel type TFT 604 and the n-channel type TFT 605 is omitted because Embodiment 4 can be referred to. Also, a pixel TFT composed of an n-channel TFT
The description of 606 can be made by referring to the first embodiment or the third embodiment, and will not be repeated. The pixel TFT 606 has a structure having two channel formation regions between a source region and a drain region (double gate structure). However, referring to the description of the structure of the n-channel TFT in Example 3, The description is omitted because it can be easily understood. Note that this embodiment is not limited to the double gate structure, and may have a single gate structure in which one channel formation region is formed or a triple gate structure in which three channel formation regions are formed.

In this embodiment, the pixel electrode 610 connected to the drain region of the pixel TFT is used as a reflection electrode. As the material of the pixel electrode 610, it is desirable to use a material having excellent reflectivity, such as a film containing Al or Ag as a main component or a laminated film thereof. In addition, the pixel electrode 610
It is preferable to increase the whiteness by adding a known process such as sandblasting or etching to make the surface uneven, prevent specular reflection, and scatter reflected light.

FIG. 12 is a sectional view taken along a dotted line AA ′ in FIG.
It is sectional drawing cut | disconnected by. The conductive layer 712 functioning as a gate electrode also serves as one electrode of a storage capacitor of an adjacent pixel, and forms a capacitor in a portion overlapping with the semiconductor layer 753 connected to the pixel electrode 752. The arrangement relationship between the source wiring 707 and the pixel electrode 724 and the adjacent pixel electrode 751 is such that the ends of the pixel electrodes 724 and 751 are
By forming the overlapping portion on the base 7, stray light is blocked and light-shielding properties are enhanced.

After obtaining the state shown in FIG. 10, an alignment film is formed on the pixel electrode 610, and a rubbing process is performed. In this example, before forming the alignment film, a columnar spacer (not shown) for maintaining the substrate interval was formed at a desired position by patterning an organic resin film such as an acrylic resin film. Instead of the columnar spacers, spherical spacers may be spread over the entire surface of the substrate.

Next, a second fixed substrate (counter substrate) is prepared. Next, after forming a coloring layer and a light-shielding layer on the counter substrate second fixed substrate, a planarizing film is formed. Next, a counter electrode made of a transparent conductive film was formed on at least the pixel portion over the flattening film, an alignment film was formed over the entire surface of the counter substrate, and rubbing treatment was performed.

Then, the element forming substrate on which the pixel portion and the driving circuit are formed and the second fixed substrate are bonded with a second adhesive layer (in this embodiment, a sealing material). A filler is mixed in the second adhesive layer, and the two substrates are bonded at a uniform interval by the filler and the columnar spacer.
Thereafter, a liquid crystal material is injected between the two substrates, and completely sealed with a sealing agent (not shown). A known liquid crystal material may be used as the liquid crystal material.

Next, after performing the step of sealing (or enclosing) the liquid crystal, the first fixed substrate was separated by laser irradiation as described in Embodiment Mode and Example 1. The subsequent state of the liquid crystal display device will be described with reference to FIG.

FIG. 11 is a top view showing a pixel portion, a driving circuit, and an FPC (Flexible Printed Wiring Board: Flexible PWB).
A device forming substrate on which an external input terminal to which a rinted circuit is attached, a wiring 81 connecting the external input terminal to the input portion of each circuit, and the like, and a counter substrate 82 provided with a color filter and the like are made of a sealing material 83. Are pasted together.

The second driving circuit 84 overlaps with the gate driving circuit 84.
A light-shielding layer 86a is provided on the fixed substrate side, and a light-shielding layer 86b is formed on the second fixed substrate side so as to overlap with the source-side drive circuit 85. In the color filter 88 provided on the second fixed substrate side on the pixel portion 87, a light-shielding layer and colored layers of red (R), green (G), and blue (B) correspond to each pixel. It is provided. In actual display, a color display is formed by three colors of a red (R) coloring layer, a green (G) coloring layer, and a blue (B) coloring layer. It is optional.

Here, the color filter 88 is provided on the second fixed substrate in order to achieve colorization. However, the present invention is not particularly limited. When a device is manufactured on the element forming substrate, the color filter is formed on the element forming substrate. May be.

Further, a light-shielding layer is provided between adjacent pixels in the color filter, so that portions other than the display area are shielded from light. Here, the light-blocking layers 86a and 86b are provided also in a region covering the driving circuit. However, the region covering the driving circuit is covered with a cover when the liquid crystal display device is later incorporated as a display portion of an electronic device. A structure without a light-blocking layer may be employed. When a necessary element is manufactured over an element formation substrate, a light-shielding layer may be formed on the element formation substrate.

Further, without providing the above-mentioned light-shielding layer, between the second fixed substrate and the counter electrode, a colored layer constituting a color filter is appropriately arranged so as to be shielded from light by a stack of a plurality of layers, and the other than the display area is provided. A portion (a gap between each pixel electrode) and a driving circuit may be shielded from light.

An FPC 89 composed of a base film and wiring is bonded to the external input terminal with an anisotropic conductive resin. Furthermore, the mechanical strength is enhanced by the reinforcing plate.

A polarizing plate (not shown) is attached only to the second fixed substrate.

The liquid crystal display device manufactured as described above can be used as a display unit of various electronic devices.

This embodiment can be combined with the first embodiment.

[Embodiment 7] In this embodiment, an example of a circuit configuration of the liquid crystal display device shown in Embodiment 6 is shown in FIG.

FIG. 13A shows a circuit configuration for performing analog driving. In this embodiment, a source-side drive circuit 90, a pixel portion 91, and a gate-side drive circuit 92 are provided. In this specification, a drive circuit is a generic term including a source-side processing circuit and a gate-side drive circuit.

The source side driving circuit 90 includes a shift register 90a, a buffer 90b, and a sampling circuit (transfer gate) 90c. The gate-side drive circuit 92 includes a shift register 92a, a level shifter 92
b, a buffer 92c is provided. Note that the shift registers shown in FIG. 16 may be used as the shift registers 90a and 92a. If necessary, a level shifter circuit may be provided between the sampling circuit and the shift register.

In this embodiment, the pixel section 91 includes a plurality of pixels, and each of the plurality of pixels is provided with a TFT element.

All of the source side drive circuit 90 and the gate side drive circuit 92 can be formed by N-channel TFTs. In this case, all circuits are formed using the EEMOS circuit shown in FIG. 8A as a basic unit. However, power consumption is slightly increased as compared with the conventional CMOS circuit.

Further, all of the source-side drive circuit 90 and the gate-side drive circuit 92 can be formed by p-channel TFTs.

Although not shown, a gate-side drive circuit may be further provided on the side opposite to the gate-side drive circuit 92 with the pixel portion 91 interposed therebetween.

In the case of digital driving, FIG.
As shown in (B), a latch (A) 93b and a latch (B) 93c may be provided instead of the sampling circuit.
The source-side drive circuit 93 includes a shift register 93a, a latch (A) 93b, a latch (B) 93c, a D / A converter 93d, and a buffer 93e. The gate-side drive circuit 95 includes a shift register 95a, a level shifter 95b, and a buffer 95c. Note that the shift registers shown in FIG. 9 may be used as the shift registers 93a and 95a. If necessary, a level shifter circuit may be provided between the latch (B) 93c and the D / A converter 93d.

Further, all of the source-side drive circuit 93 and the gate-side drive circuit 95 can be formed by N-channel TFTs.

Further, all of the source-side drive circuit 93 and the gate-side drive circuit 95 can be formed by p-channel TFTs.

The above configuration can be realized according to the manufacturing steps shown in the second, third, or fourth embodiment. Further, although only the configuration of the pixel portion and the drive circuit is shown in this embodiment, a memory or a microprocessor can be formed according to the manufacturing process of this embodiment.

[Embodiment 8] In this embodiment, FIG. 14 shows an example of a liquid crystal display device in which TFTs used for a pixel portion and a driving circuit are constituted by inverted staggered TFTs. FIG. 14A is an enlarged top view of one of the pixels in the pixel portion.
In FIG. 14, the portion cut along the dotted line AA ′
This corresponds to the cross-sectional structure of the pixel portion in FIG.

In FIG. 14B, reference numeral 50a denotes a first fixed substrate, 51 denotes a first adhesive layer, and 50b denotes an element forming substrate. First, according to the embodiment, first fixed substrate 50a and first adhesive layer 51 are formed. Element forming substrate 50 bonded with (separation layer)
Prepare b. If necessary, a base insulating film may be formed over the element formation substrate.

In the pixel section, the pixel TFT section is formed by an N-channel TFT. A gate electrode 52 is formed on a substrate 51, on which a first insulating film 53a made of silicon nitride and a second insulating film 53b made of silicon oxide are provided. On the second insulating film, n + regions 54 to 56 as active layers, channel forming regions 57 and 58, an n− region 59 between the n + region and the channel forming region,
60 are formed. In addition, channel forming regions 57 and 58
Is protected by the insulating layers 61 and 62. After forming a contact hole in the first interlayer insulating film 63 covering the insulating layers 61 and 62 and the active layer, a wiring 64 connecting to the n + region 54 is formed, and a wiring 65 is connected to the n + region 56. A passivation film 66 is formed thereon. And
A second interlayer insulating film 67 is formed thereon. further,
A third interlayer insulating film 68 is formed thereon, and ITO, S
The pixel electrode 69 made of a transparent conductive film such as nO ₂
Connected to Reference numeral 70 denotes a pixel electrode adjacent to the pixel electrode 69.

In this embodiment, an example of a transmissive liquid crystal display device is shown as an example, but there is no particular limitation. For example, a metal material having reflectivity is used as a material of the pixel electrode, and the patterning of the pixel electrode is changed, or some steps are added / added.
If deletion is performed as appropriate, a reflective liquid crystal display device can be manufactured.

In this embodiment, the pixel TFT in the pixel portion is
Has a double-gate structure, but a multi-gate structure such as a triple-gate structure may be used in order to reduce variation in off-state current. Further, a single gate structure may be used to improve the aperture ratio.

Further, the capacitance portion of the pixel portion is formed by the capacitance wiring 71 and the n + region 56 using the first insulating film and the second insulating film as dielectrics.

Note that the pixel portion shown in FIG. 14 is merely an example, and it is needless to say that the present invention is not particularly limited to the above configuration.

In addition, all TFTs on the element forming substrate are set to N
It can be a channel type TFT. If all the TFTs on the element forming substrate are composed of N-channel TFTs, P
Since the step of forming the channel type TFT can be omitted, the manufacturing steps of the liquid crystal display device can be simplified. In addition, the yield of the manufacturing process is improved, and the manufacturing cost of the liquid crystal display device can be reduced.

[Embodiment 8] In this embodiment, FIG. 15 shows an example of a liquid crystal display device in which all the TFTs used for the pixel portion and the driver circuit are constituted by N-channel TFTs. Example 6
The same reference numerals are used for portions corresponding to the same portions as those in FIG.

In FIG. 15, reference numeral 601 denotes a first fixed substrate;
Reference numeral 602 denotes a first adhesive layer, and 603, an element forming substrate. First, according to the embodiment, a base insulating film is formed on an element forming substrate 603 bonded to the first fixed substrate 601 and the first adhesive layer 602 (separation layer). To form

An N-channel TFT 11 is formed on the underlying insulating film.
01, a driving circuit including an N-channel TFT 1102,
A pixel TFT 1103 composed of an N-channel TFT and a storage capacitor 1104 are formed. Note that the description of the N-channel TFT is omitted since the third embodiment may be referred to.

Here, different from the sixth embodiment, this is an example of a transmission type liquid crystal display device. After forming an interlayer insulating film, a pixel electrode 1107 made of a transparent conductive film is formed by patterning, and a contact hole is formed to form a pixel electrode 1107.
A connection electrode 1108 for connecting the pixel 107 and the drain region of the pixel TFT 1103 was formed. Similarly, a connection electrode 1109 for connecting the pixel electrode 1107 to the semiconductor region in the storage capacitor 1104 was formed.

After the state shown in FIG. 15 is obtained, the second fixing substrate is bonded with the second adhesive layer according to the process of the sixth embodiment, and then the first adhesive layer 602 is irradiated with a laser to perform the first fixing. The liquid crystal display device may be completed by separating the substrate 601.

By forming the gate-side driver circuit and the source-side driver circuit only with the N-channel TFT, the pixel portion and the driver circuit can all be formed with the N-channel TFT. Therefore, the yield and throughput of the TFT process in manufacturing an active matrix type electro-optical device can be significantly improved, and the manufacturing cost can be reduced.

This embodiment can be implemented when either one of the source-side drive circuit and the gate-side drive circuit is an external IC chip.

In this embodiment, the driving circuit is constituted by using only the E-type NTFT.
It may be formed by combining TFTs.

[Embodiment 9] In this embodiment, FIG. 16 shows an example of a liquid crystal display device in which TFTs used for a pixel portion and a driver circuit are all formed of P-channel TFTs. Note that the same reference numerals are used for portions corresponding to the same portions as those in FIG. 10 of the sixth embodiment.

In FIG. 16, reference numeral 601 denotes a first fixed substrate;
Reference numeral 602 denotes a first adhesive layer, and 603, an element forming substrate. First, according to the embodiment, a base insulating film is formed on an element forming substrate 603 bonded to the first fixed substrate 601 and the first adhesive layer 602 (separation layer). To form

The P-channel type TFT 12 is formed on the underlying insulating film.
01, a driving circuit including a P-channel TFT 1202;
A pixel TFT 1203 made of a P-channel TFT and a storage capacitor 1204 are formed. Note that the description of the P-channel TFT is omitted because Embodiment 2 may be referred to.

Here, unlike the sixth embodiment, an example of a transmission type liquid crystal display device will be described. After forming an interlayer insulating film, a pixel electrode 1207 made of a transparent conductive film is formed by patterning, and then a contact hole is formed to form a pixel electrode 1207.
A connection electrode 1208 for connecting the drain region of the pixel TFT 1203 with the pixel electrode 207 was formed. Similarly, a connection electrode 1209 for connecting the pixel electrode 1207 to the semiconductor region in the storage capacitor 1204 was formed.

After the state shown in FIG. 16 is obtained, the second fixing substrate is bonded with the second adhesive layer according to the process of the sixth embodiment, and then the first adhesive layer 602 is irradiated with a laser to perform the first fixing. The liquid crystal display device may be completed by separating the substrate 601.

By forming the gate-side driver circuit and the source-side driver circuit only with the P-channel TFT, the pixel portion and the driver circuit can all be formed with the P-channel TFT. Therefore, the yield and throughput of the TFT process in manufacturing an active matrix type electro-optical device can be significantly improved, and the manufacturing cost can be reduced.

This embodiment can also be implemented when either the source side drive circuit or the gate side drive circuit is an external IC chip.

[Embodiment 10] As a device forming substrate, a metal substrate, for example, a stainless steel substrate may be used.
In this embodiment, an example in that case will be described below.

In this embodiment, a stainless steel substrate (thickness: 10 to 200 μm) is used as the element forming substrate of the first embodiment. First, according to the embodiment, the first fixed substrate and the stainless steel substrate are bonded with the first adhesive layer.

Thereafter, according to the first embodiment, a necessary element may be formed by forming a base insulating film on an element forming substrate made of a stainless steel substrate. Note that, unlike the first embodiment,
Since a stainless steel substrate having high heat resistance is used, a TFT can be manufactured by using a process at a higher temperature (about 500 ° C. or lower) than in Example 1.

When the first fixed substrate is separated, a stainless steel substrate is used. Therefore, even if laser light is irradiated, the first fixed substrate can be separated without affecting the elements formed on the element forming substrate at all. Can be separated.

Further, since the stainless steel substrate has a light shielding property, the display device of this embodiment is a reflection type liquid crystal display device.

By using a thin metal substrate (having a thickness of 10 to 200 μm), a light-emitting device which can be reduced in weight and thickness and has flexibility can be obtained. In addition, since a metal substrate is used, a TFT formed on an element substrate is used.
A heat radiation effect of the element is obtained.

This embodiment can be freely combined with any one of Embodiments 1 to 9.

[Embodiment 11] A drive circuit and a pixel portion formed by implementing the present invention are used for various electro-optical devices (active matrix liquid crystal display, active matrix EL display, active matrix EC display). Can be. That is, the invention of the present application can be applied to all electronic devices in which these electro-optical devices are incorporated in a display unit.

Examples of such electronic devices include a video camera, a digital camera, a head mounted display (goggle type display), a car navigation, a car stereo, a personal computer, a portable information terminal (a mobile computer, a mobile phone or an electronic book, etc.). Is mentioned. Examples of these are shown in FIGS.

FIG. 18A shows a personal computer, which includes a main body 2001, an image input section 2002, and a display section 20.
03, a keyboard 2004 and the like. The present invention can be applied to the image input unit 2002, the display unit 2003, and other driving circuits.

FIG. 18B shows a video camera, which includes a main body 2101, a display portion 2102, an audio input portion 2103, operation switches 2104, a battery 2105, and an image receiving portion 210.
6 and so on. The present invention can be applied to the display portion 2102 and other driver circuits.

FIG. 18C shows a mobile computer (mobile computer), which includes a main body 2201, a camera section 2202, an image receiving section 2203, operation switches 2204, a display section 2205, and the like. The present invention can be applied to the display portion 2205 and other driving circuits.

FIG. 18D shows a goggle type display, which comprises a main body 2301, a display section 2302, and an arm section 230.
3 and so on. The present invention can be applied to the display portion 2302 and other driving circuits.

FIG. 18E shows a player using a recording medium (hereinafter, referred to as a recording medium) on which a program is recorded, and includes a main body 2401, a display section 2402, and a speaker section 240.
3, a recording medium 2404, an operation switch 2405, and the like. This player uses a DVD (D
digital Versatile Disc), CD
And the like, it is possible to perform music appreciation, movie appreciation, games, and the Internet. The present invention can be applied to the display portion 2402 and other driving circuits.

FIG. 18F shows a digital camera, which includes a main body 2501, a display section 2502, an eyepiece section 2503, operation switches 2504, an image receiving section (not shown), and the like. The present invention can be applied to the display portion 2502 and other driving circuits.

FIG. 19A shows a mobile phone,
01, audio output unit 2902, audio input unit 2903, display unit 2904, operation switch 2905, antenna 2906
And so on. The present invention can be applied to the audio output unit 2902, the audio input unit 2903, the display unit 2904, and other driving circuits.

FIG. 19B shows a portable book (electronic book), which includes a main body 3001, display portions 3002 and 3003, a storage medium 3004, operation switches 3005, and an antenna 3006.
And so on. The present invention can be applied to the display units 3002 and 3003 and other driving circuits.

FIG. 19C shows a display, which includes a main body 3101, a support 3102, a display portion 3103, and the like.
The present invention can be applied to the display portion 3103. The display of the present invention is particularly advantageous when the screen is enlarged, and is advantageous for a display having a diagonal of 10 inches or more (particularly 30 inches or more).

As described above, the applicable range of the present invention is extremely wide, and can be applied to electronic devices in all fields. Further, the electronic apparatus according to the present embodiment can be realized by using any combination of the embodiments 1 to 10.

[0181]

According to the present invention, a display device in which an element forming layer (including a liquid crystal material, a pixel electrode, and a TFT element) is sandwiched between an element forming substrate as a resin substrate and a second fixed substrate as a resin substrate, It has flexibility that it does not break even when stress is generated.

Further, the thickness of the element forming substrate is very small.
Specifically, 50 μm to 300 μm, preferably 150 μm
Even when a substrate having a thickness of m to 200 μm is used, a highly reliable liquid crystal display device can be obtained.

[Brief description of the drawings]

FIG. 1 is a view showing a substrate bonding step.

FIG. 2 is a diagram showing a state of a bonded substrate.

FIG. 3 illustrates a manufacturing process.

FIG. 4 is a diagram showing a manufacturing process of a p-channel TFT.

FIG. 5 is a diagram illustrating a manufacturing process of an n-channel TFT.

FIG. 6 illustrates a process for manufacturing a CMOS circuit.

FIG. 7 illustrates a process for manufacturing a CMOS circuit.

FIG. 8 illustrates a structure of an NMOS circuit.

FIG. 9 illustrates a structure of a shift register.

FIG. 10 is a cross-sectional structure diagram of a driving circuit and a pixel portion of a liquid crystal display device.

FIG. 11 is a top view of a liquid crystal display device.

FIG. 12 is a top view of a pixel of a liquid crystal display device.

FIG. 13 is a circuit block diagram of a liquid crystal display device.

14A and 14B are a top view and a cross-sectional structure diagram of a pixel portion of a liquid crystal display device.

FIG. 15 is a cross-sectional structure diagram of a driving circuit and a pixel portion of a liquid crystal display device.

FIG. 16 is a cross-sectional structural view of a driving circuit and a pixel portion of a liquid crystal display device.

FIG. 17 is a diagram showing a state in which a curvature is given.

FIG. 18 illustrates an example of an electronic device.

FIG. 19 illustrates an example of an electronic device.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI theme coat ゛ (Reference) H01L 21/336 H01L 29/78 626C 5F110 H01S 3/00 627D F-term (Reference) 2H089 MA03Y NA39 NA53 NA53 NA58 QA12 QA16 TA01 TA05 TA09 2H090 HA04 HB03X HB06X HD01 JB03 JB11 JC07 LA03 2H092 HA02 JA24 JB56 MA31 MA37 NA27 PA01 PA04 RA10 5C094 AA31 AA36 BA03 BA43 CA19 CA24 DA07 DA12 DA14 DA15 EA04 EA06 EA07 HA10 EB02 FB07 AB10 FB02 AA17 BB02 BB04 BB05 CC02 CC08 DD01 DD15 DD17 EE01 EE02 EE03 EE04 EE06 EE09 EE14 EE23 EE28 EE43 EE44 EE45 FF02 FF03 FF09 FF28 FF30 NN01 GG02 GG13 GG25 GG32 J04 H23 GG43 GG43 GG43 GG43 HGG NN24 NN27 NN34 NN35 NN72 NN78 PP03 PP34 QQ04 QQ11 QQ16 QQ19 QQ25

Claims (18)

[Claims] A first fixing substrate and an element forming substrate are bonded to each other with a first adhesive layer provided on the element forming substrate, and an insulating film is formed after the element forming substrate is bonded; A TFT element and a pixel electrode are formed thereon, and a second fixing substrate is bonded on the pixel electrode with a second adhesive layer. Then, the first adhesive layer is removed by irradiating a laser beam. A method for manufacturing a semiconductor device, comprising separating a substrate. 2. A method according to claim 1, wherein the first fixed substrate and the element forming substrate are bonded to each other with a first adhesive layer provided on the fixed substrate, and an insulating film is formed after bonding the element forming substrate. After forming a TFT element and a pixel electrode on the pixel electrode and bonding a second fixed substrate on the pixel electrode with a second adhesive layer, the first adhesive layer is removed by irradiating a laser beam to the first fixed substrate. And a method for manufacturing a semiconductor device. 3. The method for manufacturing a semiconductor device according to claim 1, wherein a liquid crystal material is provided between the pixel electrode and the second fixed substrate. 4. The method for manufacturing a semiconductor device according to claim 3, wherein the liquid crystal material is held by the second adhesive layer that bonds the element forming substrate and the second fixed substrate. 5. The method for manufacturing a semiconductor device according to claim 1, wherein the second adhesive layer is a sealing material. 6. The method for manufacturing a semiconductor device according to claim 1, wherein an amorphous silicon thin film is formed between the element forming substrate and the first adhesive layer. 7. The method of manufacturing a semiconductor device according to claim 1, wherein a diamond-like carbon thin film is formed between the element forming substrate and the first adhesive layer. 8. The method for manufacturing a semiconductor device according to claim 1, wherein the first adhesive layer is colored. 9. The method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is black. 10. The method according to claim 1, wherein
The method for manufacturing a semiconductor device, wherein the element forming substrate and the second fixed substrate are substrates made of an organic resin. 11. The method for manufacturing a semiconductor device according to claim 1, wherein the first fixed substrate is an insulating substrate having a light-transmitting property. 12. The semiconductor device according to claim 1, wherein the laser beam is a pulse oscillation type or continuous emission type excimer laser, a YAG laser, or a YVO ₄ laser. Production method. 13. The laser light according to claim 1, wherein the laser light is a fundamental wave of a YAG laser,
A method for manufacturing a semiconductor device, which is a harmonic or a third harmonic. 14. The method for manufacturing a semiconductor device according to claim 1, wherein the laser beam is irradiated by forming a linear beam and scanning the laser beam. 15. The first fixed substrate according to claim 1, wherein the laser light is applied by passing the first fixed substrate from the back surface of the first fixed substrate to the front surface of the first fixed substrate. Irradiating the laser beam to the first adhesive layer provided in the semiconductor device. 16. A method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is a transmissive liquid crystal display device. 17. A method for manufacturing a semiconductor device, wherein the semiconductor device according to any one of claims 1 to 16 is a reflective liquid crystal display device. 18. A semiconductor device according to claim 1, wherein the semiconductor device is a video camera, a digital camera,
A method for manufacturing a semiconductor device, which is a goggle-type display, a car navigation system, a personal computer, or a personal digital assistant.