JP2002030416A - Fabrication method of visible light responsive titanium oxide thin film - Google Patents
Fabrication method of visible light responsive titanium oxide thin filmInfo
- Publication number
- JP2002030416A JP2002030416A JP2000213589A JP2000213589A JP2002030416A JP 2002030416 A JP2002030416 A JP 2002030416A JP 2000213589 A JP2000213589 A JP 2000213589A JP 2000213589 A JP2000213589 A JP 2000213589A JP 2002030416 A JP2002030416 A JP 2002030416A
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- JP
- Japan
- Prior art keywords
- thin film
- tio
- visible light
- titanium oxide
- oxide thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
(57)【要約】
【課題】 光触媒薄膜を作製する方法に関するものであ
り、TiO2の光応答波長領域を変化させることにより
光触媒反応効率を向上させようとするものである。
【解決手段】 レーザー蒸着法により製膜した二酸化チ
タン(TiO2)薄膜に遷移金属を熱拡散させること
で、可視光応答型酸化チタン薄膜を作製する方法であっ
て、その光応答波長が600〜250nmである。
(57) Abstract: it relates to a method of making a photocatalytic film is intended to improve the photocatalytic reaction efficiency by changing the optical response wavelength region of TiO 2. SOLUTION: This method is for producing a visible light responsive type titanium oxide thin film by thermally diffusing a transition metal into a titanium dioxide (TiO 2 ) thin film formed by a laser vapor deposition method. 250 nm.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、光触媒薄膜を作製
する方法に関するものであり、TiO2の光応答波長領
域を変化させることにより光触媒反応効率を向上させよ
うとするものである。BACKGROUND OF THE INVENTION The present invention relates to a method of making a photocatalytic film is intended to improve the photocatalytic reaction efficiency by changing the optical response wavelength region of TiO 2.
【0002】[0002]
【従来技術】TiO2の光触媒効果とは、紫外線(波長
400nm以下)照射されることによって表面で光化学
反応が生じ、表面に接する有機物資や細菌等を分解、除
菌する作用である。しかし太陽光の大部分は可視光(波
長400nm以上)であるため、紫外線を必要とする酸
化チタン光触媒は十分な分解効率が得られないという欠
点があり、自然光下もしくは屋内照明下においても高効
率な光触媒を形成する方法が望まれている。 2. Description of the Related Art The photocatalytic effect of TiO.sub.2 is an action of causing a photochemical reaction on the surface by irradiation with ultraviolet rays (wavelength of 400 nm or less) to decompose and remove organic substances and bacteria in contact with the surface. However, since most of sunlight is visible light (wavelength of 400 nm or more), the titanium oxide photocatalyst that requires ultraviolet light has a disadvantage that sufficient decomposition efficiency cannot be obtained, and the efficiency is high even under natural light or indoor lighting. A method for forming a photocatalyst is desired.
【0003】[0003]
【発明が解決しようとする課題】本発明は、TiO2に
遷移金属を添加することで、TiO2の光応答領域をよ
り可視光側へ拡張することにより、自然光下及び屋内照
明下において高効率な光触媒薄膜を作製する方法を提供
するものである。The present invention is to challenge it to solve the above-by adding a transition metal to TiO 2, by extending to a more visible side photoresponsive region of TiO 2, high efficiency under natural light and indoor lighting under It is intended to provide a method for producing a photocatalytic thin film.
【0004】[0004]
【課題を解決しようとするための手段】本発明の可視光
応答型TiO2薄膜の作製方法は、レーザー蒸着法によ
り製膜した数10nmの遷移金属(Ta,Nb,Cr,
Zr,W)層さらに数100nm程度のTiO2薄膜を
堆積させ、熱処理により相互拡散させることで可視光応
答性をもった混合相を形成させるものである。According to the present invention, a visible light responsive TiO 2 thin film is produced by a transition metal (Ta, Nb, Cr, Ta, Nb, Cr,
A Zr, W) layer is further deposited with a TiO 2 thin film having a thickness of about several hundred nm, and is interdiffused by heat treatment to form a mixed phase having visible light responsiveness.
【0005】即ち、本発明は、遷移金属ターゲットをレ
ーザー光により真空中で蒸発させて基板上に遷移金属薄
膜を堆積させ、次に二酸化チタン(TiO2)ターゲッ
トをレーザー光により低圧酸素雰囲気中で蒸発させて遷
移金属薄膜上に二酸化チタン薄膜を堆積させ、その後こ
れらの堆積膜層を温度500−800℃に加熱して遷移
金属を二酸化チタン薄膜中に熱拡散させることにより、
可視光応答型酸化チタン薄膜を作製する方法である。本
発明で得られた可視光応答型酸化チタン薄膜は、その光
応答波長範囲が600〜250nmであった。That is, according to the present invention, a transition metal target is evaporated in a vacuum by a laser beam to deposit a transition metal thin film on a substrate, and then a titanium dioxide (TiO 2 ) target is irradiated by a laser beam in a low-pressure oxygen atmosphere. Evaporating and depositing titanium dioxide thin films on the transition metal thin film, and then heating these deposited film layers to a temperature of 500-800 ° C. to thermally diffuse the transition metal into the titanium dioxide thin film,
This is a method for producing a visible light responsive titanium oxide thin film. The visible light responsive titanium oxide thin film obtained in the present invention had a light response wavelength range of 600 to 250 nm.
【0006】[0006]
【発明の実施の形態】TiO2の光触媒反応の可視光応
答性を付与する目的で、種々(V,Cr,Ni,Cu,
Zr,Nb,Mo,Ag,Ta,W)の金属元素をTi
O2膜中に熱処理により添加することで試料を作成し
た。BEST MODE FOR CARRYING OUT THE INVENTION For the purpose of imparting visible light responsiveness to the photocatalytic reaction of TiO 2 , various (V, Cr, Ni, Cu,
Zr, Nb, Mo, Ag, Ta, W)
A sample was prepared by adding it to the O 2 film by heat treatment.
【0007】まず、レーザー蒸着法で、Al2O3などの
平滑な単結晶基板の上に高真空度(10-6Torr以
上)中で数10nmの金属薄膜を堆積させ、さらに低圧
酸素雰囲気中(10m〜100mTorr)でTiO2
薄膜を数100nm堆積させる。その後500〜800
℃程度の熱処理により下部金属層を上部TiO2層に拡
散させる。First, a metal thin film having a thickness of several tens nm is deposited on a smooth single crystal substrate such as Al 2 O 3 in a high vacuum (10 -6 Torr or more) by a laser vapor deposition method. (10m-100mTorr) at TiO 2
A thin film is deposited for several hundred nm. Then 500-800
The lower metal layer is diffused into the upper TiO 2 layer by a heat treatment at about ° C.
【0008】このように種々の金属を拡散させたTiO
2薄膜の光伝導特性を測定すると、Ta,Nb,Cr,
Zr,Wを添加した試料で可視光応答を示した。以下、
本発明を実施例に基づいて説明する。[0008] TiO thus diffused various metals
2 When the photoconductive properties of the thin film were measured, Ta, Nb, Cr,
The sample to which Zr and W were added showed a visible light response. Less than,
The present invention will be described based on examples.
【0009】図1は、TiO2膜にTa,Nb,Cr,
Zr,Wを拡散させたとき試料と、TiO2のみの試料
に対する光伝導特性の波長依存性である。TiO2のみ
の試料は波長400nm付近から急激に光伝導度が減少
するのに対して、これら金属を拡散させた試料は410
〜600nm付近の長波長域においても著しく高い光伝
導度を示していることがわかる。FIG. 1 shows that a TiO 2 film is made of Ta, Nb, Cr,
This is the wavelength dependence of the photoconductive properties of the sample when Zr and W are diffused and the sample containing only TiO 2 . The sample containing only TiO 2 has a sharp decrease in photoconductivity from around 400 nm, whereas the sample in which these metals are diffused has a wavelength of 410 nm.
It can be seen that the photoconductor exhibits extremely high photoconductivity even in a long wavelength region around -600 nm.
【0010】[0010]
【実施例1】1パルス当たり100mJ、繰り返し周波
数10HzのYAGレーザー(波長532nm)を真空
中に置いた金属タンタル(Ta)ターゲットに直径1m
mに集光させて入射した。金属Taターゲットより5c
mの距離に置いたα−AL2O3(0001)基板(10
mm×10mm)を設置した。Example 1 A YAG laser (wavelength: 532 nm) having a repetition frequency of 10 Hz and a pulse width of 100 mJ was applied to a metal tantalum (Ta) target placed in a vacuum with a diameter of 1 mJ.
m. 5c from metal Ta target
α-AL 2 O 3 (0001) substrate (10
mm × 10 mm).
【0011】5分のレーザー照射で厚さ10nm程度の
Taを基板上に堆積させ、次にターゲットを酸化チタン
ターゲットに変更し、1時間のレーザー照射で厚さ20
0nm程度のTiO2膜をTa膜上に堆積した。さらに
800℃ 6時間、大気中で熱処理をしてTiO2膜中
にTaを拡散させた。[0011] Ta of about 10 nm thickness is deposited on the substrate by laser irradiation for 5 minutes, then the target is changed to a titanium oxide target, and the laser irradiation of 1 hour is applied to a thickness of 20 nm.
A TiO 2 film of about 0 nm was deposited on the Ta film. Further, heat treatment was performed in the air at 800 ° C. for 6 hours to diffuse Ta into the TiO 2 film.
【0012】この試料の光伝導度の波長依存性を調査し
た。その結果、入射光600nm付近まで光応答を示し
(図1中“TiO2/Ta”)、この領域は、バンドギ
ャップが30eV以上である”TiO2のみ”では、通
常光応答が観測されない領域である。The wavelength dependence of the photoconductivity of this sample was investigated. As a result, shows an optical response to the vicinity of the incident light 600 nm (figure 1 "TiO 2 / Ta") , this region has a band gap is more than 30eV In "TiO 2 only", in the region where the normal optical response is not observed is there.
【0013】[0013]
【実施例2】実施例1と同手法でその他、下部金属層と
してCr,Ni,Cu,Zr,Nb,Mo,Ag,Wを
用いて試料を作成し、光伝導度の入射光依存性を測定し
た。金属層を下部に持たないTiO2薄膜(図中“Ti
O2のみ”)と比較して、そのうちNb,Cr,Zr,
Wを拡散させた薄膜において、特に長波長側(410〜
600nm)で大幅に光伝導度が上昇した。Example 2 A sample was prepared in the same manner as in Example 1 except that Cr, Ni, Cu, Zr, Nb, Mo, Ag and W were used as the lower metal layer, and the dependency of the photoconductivity on the incident light was measured. It was measured. TiO 2 thin film having no metal layer at the bottom (“Ti
O 2 only ") as compared to, of which Nb, Cr, Zr,
In the thin film in which W is diffused, particularly on the long wavelength side (410 to
(600 nm), the photoconductivity increased significantly.
【0014】その結果を図1に示す。光伝導度の増加量
は金属を添加しなかったTiO2と比較して、波長50
nmにおいてNb(約12万倍)、Cr(約16万
倍)、Zr(2500倍)、W(880倍)であった。FIG. 1 shows the results. The increase in the photoconductivity is greater than that of TiO 2 with no added metal at a wavelength of 50 nm.
In nm, they were Nb (about 120,000 times), Cr (about 160,000 times), Zr (2,500 times), and W (880 times).
【0015】[0015]
【発明の効果】可視光応答型のTiO2は、本来紫外光
(波長400nm以下)が必要だった光触媒反応が可視
光域(〜600nm)においてもその活性が期待でき
る。これは、太陽光スペクトラムをその光源として仮定
した場合、反応に利用できる光量が飛躍的に増大(数十
倍以上)することを意味しており、大幅に触媒効率が上
昇することを意味している。According to the present invention, TiO 2 which responds to visible light can be expected to have an activity in a visible light region (〜600 nm) in a photocatalytic reaction which originally required ultraviolet light (wavelength of 400 nm or less). This means that, assuming the solar spectrum as the light source, the amount of light available for the reaction will increase dramatically (several tens times or more), meaning that the catalyst efficiency will increase significantly. I have.
【図1】図1は、TiO2膜にTa,Nb,Cr,Z
r,Wを拡散させたとき試料と、TiO2のみの試料に
対する光伝導特性の波長依存性である。BRIEF DESCRIPTION OF DRAWINGS FIG. 1 shows that TiO 2 film has Ta, Nb, Cr, Z
This is the wavelength dependence of the photoconductive characteristics of the sample when r and W are diffused and the sample containing only TiO 2 .
───────────────────────────────────────────────────── フロントページの続き (72)発明者 八巻 徹也 群馬県高崎市綿貫町1233番地 日本原子力 研究所高崎研究所内 (72)発明者 宮下 敦巳 群馬県高崎市綿貫町1233番地 日本原子力 研究所高崎研究所内 Fターム(参考) 4G047 CA05 CA08 CB04 CB09 CC03 CD02 4K029 AA02 BA16 BA48 BB02 BD00 CA01 DB20 GA01 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Tetsuya Yamaki 1233 Watanukicho, Takasaki City, Gunma Prefecture Inside the Japan Atomic Energy Research Institute Takasaki Research Institute (72) Inventor Atsumi Miyashita 1233 Watanukicho Takasaki City, Gunma Prefecture Japan Atomic Energy Research Institute Takasaki Research In-house F-term (reference) 4G047 CA05 CA08 CB04 CB09 CC03 CD02 4K029 AA02 BA16 BA48 BB02 BD00 CA01 DB20 GA01
Claims (2)
タン(TiO2)薄膜に遷移金属を熱拡散させること
で、可視光応答型酸化チタン薄膜を作製する方法。1. A method for producing a visible light responsive titanium oxide thin film by thermally diffusing a transition metal into a titanium dioxide (TiO 2 ) thin film formed by a laser vapor deposition method.
あることを特徴とする請求項1記載の可視光応答型酸化
チタン薄膜の作製方法。2. The method for producing a visible light responsive titanium oxide thin film according to claim 1, wherein said light response wavelength is from 600 to 250 nm.
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| JP2000213589A JP4883512B2 (en) | 2000-07-14 | 2000-07-14 | Fabrication method of visible light responsive titanium oxide thin film |
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|---|---|---|---|
| JP2000213589A JP4883512B2 (en) | 2000-07-14 | 2000-07-14 | Fabrication method of visible light responsive titanium oxide thin film |
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| Publication Number | Publication Date |
|---|---|
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| JP4883512B2 JP4883512B2 (en) | 2012-02-22 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100642563B1 (en) * | 2004-01-23 | 2006-11-10 | 일본국 (도호꾸 다이가꾸쵸) | Method for manufacturing cobalt-dopped titan-dioxide film, cobalt-dopped titan-dioxide film, and multi-layer film structure |
| JP2007518881A (en) * | 2004-01-21 | 2007-07-12 | フォルシュングスツェントルム・ユーリッヒ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング | Protective layer for aluminum-containing alloys for use at high temperatures and method for producing such a protective layer |
| US7521394B2 (en) | 2005-12-29 | 2009-04-21 | The Board Of Trustees Of The University Of Illinois | Nanoparticles containing titanium oxide |
| US7901660B2 (en) | 2005-12-29 | 2011-03-08 | The Board Of Trustees Of The University Of Illinois | Quaternary oxides and catalysts containing quaternary oxides |
| JP2011167620A (en) * | 2010-02-17 | 2011-09-01 | Sumitomo Chemical Co Ltd | Anatase type titanium oxide dispersion and method for producing the same |
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| JPH1192176A (en) * | 1997-07-22 | 1999-04-06 | Bridgestone Corp | Photocatalytic film and its production |
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| JPS4913158B1 (en) * | 1970-08-13 | 1974-03-29 | ||
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007518881A (en) * | 2004-01-21 | 2007-07-12 | フォルシュングスツェントルム・ユーリッヒ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング | Protective layer for aluminum-containing alloys for use at high temperatures and method for producing such a protective layer |
| KR100642563B1 (en) * | 2004-01-23 | 2006-11-10 | 일본국 (도호꾸 다이가꾸쵸) | Method for manufacturing cobalt-dopped titan-dioxide film, cobalt-dopped titan-dioxide film, and multi-layer film structure |
| US7521394B2 (en) | 2005-12-29 | 2009-04-21 | The Board Of Trustees Of The University Of Illinois | Nanoparticles containing titanium oxide |
| US7901660B2 (en) | 2005-12-29 | 2011-03-08 | The Board Of Trustees Of The University Of Illinois | Quaternary oxides and catalysts containing quaternary oxides |
| US8541337B2 (en) | 2005-12-29 | 2013-09-24 | The Board Of Trustees Of The University Of Illinois | Quaternary oxides and catalysts containing quaternary oxides |
| JP2011167620A (en) * | 2010-02-17 | 2011-09-01 | Sumitomo Chemical Co Ltd | Anatase type titanium oxide dispersion and method for producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4883512B2 (en) | 2012-02-22 |
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