JP2002030276A - Polishing liquid composition - Google Patents

Abstract

(57) Abstract: A polishing composition capable of improving a polishing rate and reducing roll-off, a method for polishing a substrate to be polished by using the polishing composition, and the polishing. Provided is a method for manufacturing a substrate, the method including a step of polishing a substrate to be polished using a liquid composition. The following compound group (A) and compound group (B)
A polishing composition comprising at least one selected from the group consisting of an abrasive, and water: Compound group (A): having 2 to 2 carbon atoms having an OH group or an SH group.
20 carboxylic acids, 2 to 3 carbon atoms of dicarboxylic acid, 1 to 20 carbon atoms of monocarboxylic acid and salts thereof, Compound group (B): a polyvalent carboxylic acid having no OH group or SH group having 4 or more carbon atoms Acids, aminopolycarboxylic acids, amino acids and their salts.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a polishing composition. Further, the present invention relates to a method for polishing a substrate to be polished using the polishing liquid composition, and a method for manufacturing a substrate.

[0002]

2. Description of the Related Art Hard disks are becoming smaller and have higher capacities year by year, and their density is increasing, the minimum recording area is getting smaller, and the flying height of the magnetic head is getting smaller. In a polishing process of a hard disk substrate, it is required to improve a polishing rate, reduce surface roughness, and reduce surface defects such as scratches and pits. A polishing liquid composition using water, alumina, boehmite and a chelating compound ( Japanese Patent Application Laid-Open No. 11-92749), a polishing composition containing water, α-alumina, and an alumina sol stabilized with acetic acid (Japanese Patent Application Laid-Open No. 2000-63805), and a polishing method are being studied.

On the other hand, in order to increase the capacity, in order to reduce the roll-off (slipping of the end face of the substrate) generated in the polishing process and develop a substrate capable of recording to the outer peripheral portion, the polishing pad is hardened and the polishing load is reduced. Such mechanical polishing conditions are being studied.

However, although the mechanical polishing conditions for reducing the roll-off are effective to some extent, they cannot be said to be sufficient, and no study has been made on the composition of a polishing liquid capable of reducing the roll-off. Is the current situation.

[0005]

SUMMARY OF THE INVENTION An object of the present invention is to provide a polishing composition capable of improving the polishing rate and reducing roll-off, and a substrate to be polished by using the polishing composition to polish the substrate. And a method of manufacturing a substrate having a step of polishing a substrate to be polished using the polishing composition.

[0006]

That is, the gist of the present invention is as follows.
[1] A polishing composition comprising at least one selected from the following compound group (A) and compound group (B), an abrasive, and water: Compound group (A): OH group or 2 to 2 carbon atoms having an SH group
20 carboxylic acids, 2 to 3 carbon atoms of dicarboxylic acid, 1 to 20 carbon atoms of monocarboxylic acid and salts thereof, Compound group (B): a polyvalent carboxylic acid having no OH group or SH group having 4 or more carbon atoms An acid, an aminopolycarboxylic acid, an amino acid and a salt thereof, [2] a method for polishing a substrate to be polished by polishing the substrate using the polishing composition according to [1], [3] a method according to [1]. A process for polishing a substrate to be polished using the polishing composition of the present invention.

[0007]

BEST MODE FOR CARRYING OUT THE INVENTION As described above, the polishing composition of the present invention contains one or more compounds selected from the compound group (A) and the compound group (B), an abrasive, and water. It is.

The compound group (A) used in the present invention is a compound having a function of improving roll-off occurring on a substrate to be polished (hereinafter also referred to as a roll-off reducing agent). Roll-off generally means that the end face portion is more sharply cut and rounded than the center portion during polishing, and is also referred to as an end face droop. Roll-off is evaluated, for example, by measuring the shape of the end face part using a stylus or optical shape measuring device and quantifying how much the end face part is shaved compared to the center of the disc from its profile can do.

As shown in FIG. 1, the method of digitization is to use three points on a measurement curve (meaning the shape of the end face portion of the substrate to be polished) such as points A, B and C at a certain distance from the center of the disk. A point is taken, a straight line connecting point A and point C is taken as a baseline, and the distance (D) between point B and the baseline is referred to. Good roll-off means that the value of D is closer to zero. The roll-off value is a value obtained by dividing D by の of the change in the thickness of the disk before and after polishing. The roll-off value is preferably 0.2 μm / μm or less, more preferably 0.15 μm / μm, and still more preferably 0.10 μm / μm.
μm.

The positions of point A, point B and point C vary depending on the size of the object to be measured. In general, point B is located on a line connecting the end of the disk and the center from the end of the disk at 0. 5
mm position, C point is 2.5 mm position, A point is 4.5 m
Preferably, the position is m. For example, in the case of a 3.5-inch disk, it is preferable that points A, B, and C are respectively 43 mm, 47 mm, and 45 mm from the center of the disk.

The roll-off reducing agent used in the present invention comprises:
1 selected from the group consisting of a carboxylic acid having 2 to 20 carbon atoms having an OH group or an SH group, a monocarboxylic acid having 1 to 20 carbon atoms, a dicarboxylic acid having 2 to 3 carbon atoms and salts thereof.
More than one compound. Among them, from the viewpoint of the effect of improving the roll-off, the number of carbon atoms having an OH group or SH group is 2 to 2.
Preferred are 20 carboxylic acids, dicarboxylic acids having 2 to 3 carbon atoms and salts thereof.

2 to 20 carbon atoms having an OH or SH group
Examples of the carboxylic acid include oxycarboxylic acid and compounds in which the oxygen atom of the OH group of the acid is replaced with a sulfur atom. From the viewpoint of solubility in water, the number of carbon atoms of these carboxylic acids is 2 to 20, preferably 2 to 12, more preferably 2 to 8, and further preferably 2 to 6. From the viewpoint of reducing roll-off, the oxycarboxylic acid preferably has a hydroxyl group at the α-position of the carboxyl group.

The number of carbon atoms of the monocarboxylic acid is 1 to 20, preferably 1 to 12, more preferably 1 to 8, and further preferably 1 to 6, from the viewpoint of solubility in water. .

The dicarboxylic acids are those having 2 to 3 carbon atoms, that is, oxalic acid and malonic acid, from the viewpoint of reducing roll-off. Among these roll-off reducing agents, oxycarboxylic acids are preferred from the viewpoint of improving the polishing rate. Further, from the viewpoint of reducing roll-off, dicarboxylic acids are preferred.

An OH or SH group having 2 to 20 carbon atoms
Specific examples of the carboxylic acid include glycolic acid, mercaptosuccinic acid, thioglycolic acid, lactic acid, β-hydroxypropionic acid, malic acid, tartaric acid, citric acid, isocitric acid, allocitric acid, gluconic acid, glyoxylic acid,
Glyceric acid, mandelic acid, tropic acid, benzylic acid, salicylic acid and the like can be mentioned. Specific examples of monocarboxylic acids include formic acid, acetic acid, propionic acid, butyric acid, isobutyric acid, valeric acid, isovaleric acid, hexanoic acid, heptanoic acid, 2-methylhexanoic acid, octanoic acid, 2-ethylhexanoic acid, and nonane Acids, decanoic acid, lauric acid and the like. Among these, acetic acid, oxalic acid, malonic acid, glycolic acid, lactic acid,
Malic acid, tartaric acid, glyoxylic acid, citric acid and gluconic acid are preferred, and oxalic acid, malonic acid, glycolic acid, lactic acid, malic acid, tartaric acid, glyoxylic acid, citric acid and gluconic acid are more preferred.

Further, oxalic acid, malic acid, tartaric acid, citric acid and gluconic acid can be used alone or in combination with another roll-off reducing agent to further reduce clogging of abrasive grains and polishing residues on the polishing pad. This is preferable because it is possible to prevent polishing characteristics such as polishing rate and surface quality from deteriorating due to long-term use of the polishing pad. Further, frequent pad cleaning is not required, that is, the interval between pad dressings can be greatly extended, and productivity is improved, which is excellent in terms of economy, and is therefore preferable. Among them, oxalic acid, tartaric acid and citric acid are preferable, and citric acid is particularly preferable. In addition,
The monocarboxylic acid and dicarboxylic acid used in the present invention are selected from carboxylic acids having no OH group or SH group.

Further, salts of these acids (ie, salts of carboxylic acids having 2 to 20 carbon atoms having an OH group or SH group, salts of dicarboxylic acids having 2 to 3 carbon atoms, monocarboxylic acids having 1 to 20 carbon atoms) The acid salt is not particularly limited, and specific examples thereof include salts with metals, ammonium, alkylammonium, organic amines, and the like. Specific examples of metals include
Periodic table (long period type) 1A, 1B, 2A, 2B, 3A,
Metals belonging to groups 3B, 4A, 6A, 7A or 8 are mentioned. Among these metals, metals belonging to groups 1A, 3A, 3B, 7A or 8 are preferable from the viewpoint of roll-off reduction, metals belonging to groups 1A, 3A or 3B are more preferable, and sodium and potassium belonging to group 1A are most preferable. preferable.

Specific examples of the alkyl ammonium include:
Examples include tetramethylammonium, tetraethylammonium, and tetrabutylammonium.

Specific examples of the organic amine and the like include dimethylamine, trimethylamine and alkanolamine.

Among these salts, ammonium salts, sodium salts and potassium salts are particularly preferred.

These compounds of the compound group (A) can be used alone or in combination of two or more.

The total content of the compound group (A) is preferably 0.01 to 5% by weight, more preferably 0.015 to 3% by weight in the polishing composition from the viewpoint of the effect of improving roll-off and from the economical viewpoint. Wt%, more preferably 0.03 to 2
% By weight.

The compound group (B) used in the present invention has an effect of improving the polishing rate. As the compound group (B),
Examples include polyvalent carboxylic acids having no OH group or SH group having 4 or more carbon atoms, aminopolycarboxylic acids, amino acids, and salts thereof.

From the viewpoint of speed improvement, OH having 4 or more carbon atoms
Among polyvalent carboxylic acids having no group or SH group, those having 4 to 20 carbon atoms are preferable, and those having 4 to 10 carbon atoms are more preferable. Further, from the same viewpoint, as the aminopolycarboxylic acid, the number of amino groups in one molecule is preferably from 1 to 6,
Further, 1 to 4 are preferable. Further, the number of carboxylic acids is preferably from 1 to 12, more preferably from 2 to 8. Further, the number of carbon atoms is preferably 1 to 30, more preferably 1 to 2
0 is preferred. From the same viewpoint, the carbon number of the amino acid is preferably from 2 to 20, and more preferably from 2 to 10.
From the viewpoint of speed improvement, polyvalent carboxylic acids having no OH group or SH group having 4 or more carbon atoms, aminopolycarboxylic acids, and salts thereof are preferable.

Specifically, succinic acid, maleic acid, fumaric acid, glutaric acid, citraconic acid, itaconic acid, tricarbamic acid, adipic acid, propane-1,1,2,3-tetracarboxylic acid, butane-1,2 , 3,4-tetracarboxylic acid, diglycolic acid, nitrotriacetic acid, ethylenediaminetetraacetic acid (EDTA), diethylenetriaminepentaacetic acid (DTPA), hydroxyethylethylenediaminetetraacetic acid (HEDTA), triethylenetetraminehexaacetic acid (TTHA), Carboxymethylglutamic acid (GLDA), glycine, alanine and the like. Among these, succinic acid, maleic acid, fumaric acid, glutaric acid, citraconic acid, itaconic acid, tricarbalic acid, adipic acid, diglycolic acid, nitrotriacetic acid, ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid are preferred, and further succinic acid, maleic acid , Fumaric acid, citraconic acid, itaconic acid, tricarbalic acid, diglycolic acid, ethylenediaminetetraacetic acid,
Diethylenetriaminepentaacetic acid is more preferred.

Also, salts of these acids (ie, salts of polyvalent carboxylic acids having no OH group or SH group having 4 or more carbon atoms,
Aminopolycarboxylic acid salts, amino acid salts)
There is no particular limitation, and specific examples include salts with metals, ammonium, alkylammonium, organic amines, and the like. Specific examples of metals include Periodic Table (Long Period Type) 1
A, 1B, 2A, 2B, 3A, 3B, 4A, 6A, 7A
Alternatively, a metal belonging to Group 8 can be used. Among these metals, metals belonging to Group 1A, 3A, 3B, 7A or 8 are preferable from the viewpoint of improving the polishing rate, and metals belonging to Group 1A, 3A, 3B or 8 are more preferable, and sodium and potassium belonging to Group 1A. Cerium belonging to Group 3A, aluminum belonging to Group 3B, and iron belonging to Group 8 are most preferred.

Specific examples of the alkyl ammonium include:
Examples include tetramethylammonium, tetraethylammonium, and tetrabutylammonium.

Specific examples of the organic amine include dimethylamine, trimethylamine, alkanolamine and the like. Among these, ammonium salts, sodium salts, potassium salts and aluminum salts are particularly preferred as the salts.

These compounds of the compound group (B) can be used alone or in combination of two or more.

The total content of the compound group (B) is preferably from 0.01 to 10% by weight, more preferably from 0.02 to 10% by weight in the polishing composition from the viewpoint of the polishing accelerating effect, the economical viewpoint and the surface quality improvement. 7% by weight, more preferably 0.03-5
% By weight.

The combination of the compound group (A) and the compound group (B) is preferably acetic acid, oxalic acid, malonic acid, glycolic acid, lactic acid, malic acid, glyoxyl from the viewpoint of improving the speed and reducing the roll-off. One or more of acid, tartaric acid, citric acid, gluconic acid and salts thereof (compound group (A)) and succinic acid, maleic acid, fumaric acid, glutaric acid, citraconic acid, itaconic acid, adipic acid, tricarbalic acid, dicarboxylic acid More preferred is a combination of glycolic acid, nitrilotriacetic acid, ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid and one or more of these salts (compound group (B)), and oxalic acid, malonic acid, glycolic acid, lactic acid, malic acid, glyoxylic acid , Tartaric acid, citric acid, gluconic acid and one or more of these salts [compound group (A)] with succinic acid, Ynoic acid, fumaric acid, citraconic acid, itaconic acid, Torikarubaru acid, diglycolic acid,
At least one of ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid and salts thereof [compound group (B)]
Is more preferable. Further, at least one of glycolic acid, oxalic acid, tartaric acid, citric acid, malonic acid and salts thereof (compound group (A)) and succinic acid, maleic acid, itaconic acid, fumaric acid, ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid And combinations of one or more of these salts [compound group (B)]. Compound group (A) includes oxalic acid, malic acid, tartaric acid, citric acid, gluconic acid and salts of
The use of more than one kind is preferable because clogging of abrasive grains and polishing debris on the polishing pad can be further reduced, and deterioration of polishing characteristics such as polishing speed and surface quality due to long-term use of the polishing pad can be prevented.

In this case, among the above compound group (A), oxalic acid, tartaric acid, citric acid or a salt thereof is preferable, and citric acid or a salt thereof is particularly preferable. When two or more compound groups (A) are used in combination, a particularly preferable combination is a combination of two or more selected from oxalic acid, tartaric acid, citric acid and salts thereof, or oxalic acid, tartaric acid, citric acid And a combination of at least one selected from malonic acid, glycolic acid, lactic acid, malic acid, gluconic acid and salts thereof, and further preferably citric acid or a salt thereof with oxalic acid , Glycolic acid, lactic acid, malic acid, tartaric acid and a combination thereof with one or more thereof are more preferable. A particularly preferred combination is citric acid or a salt thereof and glycolic acid or a salt thereof.

As the abrasive used in the present invention, an abrasive generally used for polishing can be used. Examples of the abrasive include metal; metal or metalloid carbide,
Nitrides, oxides, borides; diamonds and the like. Metal or metalloid elements are listed in the Periodic Table (Long Period Type)
A, 2B, 3A, 3B, 4A, 4B, 5A, 6A, 7A
Or, it is derived from Group 8. As a specific example of the abrasive, α
-Alumina particles, silicon carbide particles, diamond particles,
Examples include magnesium oxide particles, zinc oxide particles, cerium oxide particles, zirconium oxide particles, colloidal silica particles, fumed silica particles, and the like. Use of one or more of these is preferred from the viewpoint of improving the polishing rate. Among them, α-alumina particles, cerium oxide particles, zirconium oxide particles, colloidal silica particles, fumed silica particles, and the like are more preferable, and α-alumina particles are particularly preferable.

The average particle size of the primary particles of the abrasive is preferably from 0.01 to 3 μm, more preferably from 0.02 to 0.8 μm, particularly preferably from 0.05 to 0.
5 μm. Further, when the primary particles are aggregated to form secondary particles, the average particle size of the secondary particles is similarly increased from the viewpoint of improving the polishing rate and reducing the surface roughness of the object to be polished. , Preferably 0.05 to 3 μm, more preferably 0.1 to 1.5 μm, particularly preferably 0.2 to 1.2 μm.
μm. The average particle size of the primary particles of the abrasive can be obtained as a number average particle size by observing (preferably 3000 to 30,000 times) with a scanning electron microscope, analyzing the image, and measuring the particle size. The average particle size of the secondary particles can be measured as a volume average particle size by using a laser light diffraction method.

The specific gravity of the abrasive is preferably from 2 to 6, and more preferably from 2 to 5, from the viewpoints of dispersibility, supply to the polishing apparatus, and recovery and reuse.

The content of the abrasive is preferably from 1 to 40% by weight, more preferably from 1 to 40% by weight, in the polishing composition, from the viewpoints of economy, reduction of surface roughness, and efficient polishing. It is 2 to 30% by weight, more preferably 3 to 15% by weight.

The water in the polishing composition of the present invention is used as a medium, and its content is preferably 40% from the viewpoint of enabling the object to be polished to be polished efficiently.
It is preferably from 98 to 98% by weight, more preferably from 50 to 97% by weight, particularly preferably from 60 to 95% by weight.

Further, the polishing composition of the present invention may contain other components as necessary.

Other components include inorganic acids and salts thereof, oxidizing agents, thickeners, dispersants, rust inhibitors, basic substances, surfactants and the like.

These components may be used alone, or 2
A mixture of more than one species may be used. Also, its content is
From the viewpoint of improving the polishing rate, expressing each function, and economy, preferably 0.05 to 20% by weight, more preferably 0.05 to 20% by weight in the polishing composition.
It is 10% by weight, more preferably 0.05 to 5% by weight.

The concentration of each component in the polishing composition is a preferable concentration when polishing, but may be a concentration when the composition is manufactured. Usually, the composition is produced as a concentrated liquid, and this is often used after dilution.

The polishing composition of the present invention is prepared by appropriately adding and mixing the compound group (A), the compound group (B), an abrasive, water and, if necessary, various additives by a known method. Can be manufactured.

It is preferable that the pH of the polishing composition is appropriately determined depending on the type of the object to be polished, required quality, and the like. For example, the pH of the polishing composition is preferably from 2 to 12, from the viewpoints of the cleaning property of the substrate, the corrosion prevention property of the processing machine, and the safety of the operator. Further, when the object to be polished is a substrate for precision parts mainly targeting a metal such as a Ni-P plated aluminum alloy substrate, from the viewpoint of improving the polishing rate and the surface quality, 2 to 9 is more preferable. And 3 to 8 are particularly preferred. Further, when used for polishing semiconductor wafers and semiconductor elements, particularly for polishing silicon substrates, polysilicon films, SiO ₂ films, etc., from the viewpoint of improving the polishing rate and improving the surface quality,
7-12 are preferable, 8-12 are more preferable, and 9-1
1 is particularly preferred. If necessary, the pH can be adjusted by appropriately mixing inorganic acids such as nitric acid and sulfuric acid, organic acids, aqueous ammonia, and basic substances such as sodium hydroxide and potassium hydroxide in desired amounts.

In the method of polishing a substrate to be polished according to the present invention, a polishing liquid is prepared by using the polishing liquid composition of the present invention or by mixing respective components so as to obtain the composition of the polishing liquid composition of the present invention. And a step of polishing the substrate to be polished, and particularly a substrate for precision parts can be suitably manufactured.

The material of the object to be polished represented by the substrate to be polished which is the object of the present invention is, for example, a metal or semimetal such as silicon, aluminum, nickel, tungsten, copper, tantalum or titanium, and a metal such as these. Examples include alloys, glass-like substances such as glass, glassy carbon and amorphous carbon, ceramic materials such as alumina, silicon dioxide, silicon nitride, tantalum nitride, and titanium nitride, and resins such as polyimide resins. Of these, metals such as aluminum, nickel, tungsten, and copper and alloys containing these metals as main components are the objects to be polished, or semiconductor substrates such as semiconductor elements containing such metals are objects to be polished. It is preferred that Especially when polishing a substrate made of Ni-P plated aluminum alloy,
The use of the polishing composition of the present invention is preferable because the roll-off is small, the polishing rate is improved, and the surface roughness can be reduced without causing surface defects.

The shape of the object to be polished is not particularly limited, and for example, a shape having a flat portion such as a disk shape, a plate shape, a slab shape and a prism shape, and a shape having a curved surface portion such as a lens can be used. Of the polishing composition using the polishing composition. Among them, it is particularly excellent in polishing a disk-shaped object to be polished.

The polishing composition of the present invention is suitably used for polishing precision component substrates. For example, it is suitable for polishing a substrate of a magnetic recording medium such as a magnetic disk, an optical disk, and a magneto-optical disk, a photomask substrate, an optical lens, an optical mirror, an optical prism, and a semiconductor substrate. Polishing of a semiconductor substrate includes polishing performed in a polishing step of a silicon wafer (bare wafer), a step of forming a buried element isolation film, a step of flattening an interlayer insulating film, a step of forming a buried metal wiring, a step of forming a buried capacitor, and the like. The polishing composition of the present invention is particularly suitable for polishing a magnetic disk substrate. Among magnetic disk substrates, it is particularly suitable for polishing an Ni-P plated aluminum magnetic disk substrate.

As a method for producing a substrate to be polished using the polishing composition of the present invention, for example, the substrate to be polished is sandwiched by a polishing plate to which a nonwoven organic polymer type polishing cloth or the like is attached. Supplying the polishing composition of the present invention to a polishing surface,
There is a method of manufacturing a substrate to be polished by moving a polishing board or a substrate while applying a constant pressure.

As described above, by using the polishing composition of the present invention, a polishing rate can be improved and a high-quality substrate with reduced roll-off can be manufactured with high production efficiency.

The polishing composition of the present invention is particularly effective in the polishing step, but can be similarly applied to other polishing steps, for example, a lapping step.

[0051]

Examples 1 to 7 and Comparative Examples 1 to 4 Abrasives (α-alumina having an average primary particle size of 0.23 μm and an average secondary particle size of 0.6 μm (purity: about 99.9%)), compound Group (A), compound group (B), ion-exchanged water, and other components, if necessary, were made to have the compositions shown in Table 1. Examples 1 to 7 and Comparative Examples 2 to 4 were aqueous ammonia, In Comparative Example 1, the pH was adjusted to 4.0 or 7.0 with nitric acid, and mixed and stirred to prepare 100 parts by weight of a polishing composition.

Using the obtained polishing composition, the center line average roughness Ra measured by the following method was 0.2 μm, and the thickness was 0.2 μm.
The surface of a 8 mm, 3.5 inch diameter Ni-P plated aluminum alloy substrate was polished by a double-sided processing machine under the following double-sided processing machine setting conditions, and the Ni-P plated used as a substrate for magnetic recording media A polished aluminum alloy substrate was obtained.

The setting conditions of the double-side processing machine are shown below. Double-side processing machine used: 9B type double-side processing machine manufactured by Speed Fam Co., Ltd. Processing pressure: 9.8 kPa Polishing pad: Polytex DG-H (manufactured by Rodel Nitta) Plate rotation speed: 55 r / min Polishing composition supply flow rate: 100 mL / min Polishing time: 4min Input number: 10

After the polishing, the thickness of the aluminum alloy substrate was measured using a film thickness meter (manufactured by Mitutoyo Corporation, laser film thickness meter Model LGH-
110 / LHC-11N), the rate of decrease in thickness was determined from the change in thickness of the aluminum alloy substrate before and after polishing, and a relative value (relative polishing rate) was determined based on Comparative Example 1.

The roll-off of the surface of each substrate after polishing was measured according to the following method. For the roll-off, a relative value (relative roll-off) was determined based on the roll-off value of Comparative Example 2. Table 1 shows the results.

[Surface Roughness (Center Line Average Roughness Ra)] Measured under the following conditions using a tally step manufactured by Rank Taylor Hobson. Stylus tip size: 25 μm × 25 μm High pass filter: 80 μm Measurement length: 0.64 mm

[Roll-off] Measuring device: Mitutoyo Form Tracer SV-C62
4 Radius of stylus tip: 2 μm (code No. 178-381) Stylus pressure: 0.7 mN or less Speed: 0.2 mm / s Analysis software: SV-600 fine contour analysis system
ratio1.01 filter: LPF (Gaussian) 0.800mm

Using the above apparatus, the shape of the edge of the disk at a distance from the disk center of 42.5 mm to 47.5 mm was measured, and the positions of points A, B and C were respectively 43 mm, 47 mm and 45 mm from the center of the disk. Then, D was obtained by the above-described measurement method using analysis software. The value obtained by dividing the obtained D by 1/2 of the amount of change in the thickness of the disk before and after polishing was defined as a roll-off value.

[0059]

[Table 1]

From the results shown in Table 1, the polishing rates of the polishing compositions obtained in Examples 1 to 7 are higher than those of the polishing compositions obtained in Comparative Examples 1 to 4, and the polishing rate of the substrate to be polished is improved. It can be seen that the roll-off can be significantly reduced.

Examples 5, 7 and Comparative Example 4
Using the polishing composition prepared in the above, the polishing evaluation described above was repeated 20 times, and 20 times the first relative polishing rate.
When the ratio of the relative polishing rate at the time of the polishing was measured as the clogging prevention performance, it was 0.95 in the polishing composition of Example 5, 0.92 in Example 7, and 0.55 in Comparative Example 4. Was. It can be seen that the polishing composition obtained in Examples 5 and 7 has more excellent anti-clogging characteristics of the polishing pad than that of Comparative Example 4.

[0062]

According to the present invention, there is an effect that a substrate with reduced roll-off can be obtained in a short time.

[Brief description of the drawings]

FIG. 1 is a diagram showing a relationship between a measurement curve and roll-off.

Claims (5)

[Claims] 1. A polishing composition comprising at least one compound selected from the following compound group (A) and compound group (B), an abrasive, and water: Compound group (A): OH
C2 to C20 carboxylic acid having a group or SH group, C2 to C3 dicarboxylic acid, C1 to C20 monocarboxylic acid and salts thereof, compound group (B): OH having 4 or more carbon atoms Polycarboxylic acids, aminopolycarboxylic acids, amino acids and salts thereof having no group or SH group. 2. A compound group (A) having an OH group or an SH group, a carboxylic acid having 2 to 20 carbon atoms, a dicarboxylic acid having 2 to 3 carbon atoms or a salt thereof, and a compound group (B) having 4 or more carbon atoms. The polishing composition according to claim 1, which is a polyvalent carboxylic acid having no OH group or SH group, an aminopolycarboxylic acid, or a salt thereof. 3. A compound group (A) comprising oxalic acid, malonic acid,
Glycolic acid, lactic acid, malic acid, glyoxylic acid, tartaric acid, citric acid, gluconic acid or salts thereof, and compound group (B) is succinic acid, maleic acid, fumaric acid, citraconic acid, itaconic acid, tricarbalic acid, diglycolic acid 2. The polishing composition according to claim 1, wherein the composition is ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, or a salt thereof. 4. A method for polishing a substrate to be polished, comprising polishing the substrate to be polished using the polishing composition according to claim 1. 5. A method for producing a substrate, comprising a step of polishing a substrate to be polished using the polishing composition according to claim 1.