JP2002016171A - Semiconductor device - Google Patents

Abstract

(57) [Summary] [PROBLEMS] To suppress the swelling of solder at a joint portion between a wiring pattern on a substrate and a lead wire of a transmitting / receiving coil. SOLUTION: An opening is formed in the end face near the end face of a substrate 4 mounted on a semiconductor device 1,
A through hole is provided so as to penetrate in the thickness direction of the substrate. A terminal 9 is provided along the inner surface of the through hole, and a lead wire 8 of the transmitting / receiving coil 3 is inserted into and connected to the terminal 9.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a non-contact type semiconductor device having a built-in transmission / reception coil for transmitting and receiving signals between an IC module and an external device connected to the IC module in a non-contact manner.

[0002]

2. Description of the Related Art In recent years, semiconductor devices such as IC cards having an IC for recording and processing data mounted on a single substrate have become widespread from the viewpoints of efficiency of information processing and security. As a communication method between the semiconductor device and an external device, a contact that mechanically connects an external terminal provided on a substrate of the semiconductor device and a terminal provided on an external processing device to transmit and receive data is used. Method, transmitting and receiving coil and I
C and a non-contact system in which data is transmitted and received to and from an external processing device by a wireless system such as an electromagnetic wave. In particular,
The non-contact method has an advantage that data can be read even in a vibration state or a state where a shield is present, since there is no damage or wear due to mechanical contact since no contact is required. Furthermore, the non-contact method does not require a card transport and a contact drive unit required for a contact-type reader / writer found in the contact method, so that the frequency of occurrence of electrical connection failures is reduced and the maintenance cost is low. The merits such as are large.

[0003] Recently, the standardization of the non-contact method has been advanced, and the transportation system, the financial and distribution service, and the I
Large markets such as D are expected.

The structure of this non-contact type semiconductor device is as follows.
In general, a method of joining an IC module on which an IC or a component is mounted and a transmission / reception coil by soldering is used. FIG. 9 shows an example of a connection method between the transmission / reception coil and the IC. FIG.
FIG. 2 is a side view of a main part of the first non-contact type semiconductor device.
In the non-contact type semiconductor device shown in FIG.
The IC housing recess 40a for mounting the IC 0 is formed by counterbore processing, and the IC 50 is protected on the IC 50 housed in the IC housing recess 40a and on the substrate 40 around the IC housing recess 40a. For this purpose, a resin 70 such as an epoxy resin for sealing the IC 50 is applied.
Further, on the surface of the substrate 40, a wiring pattern 140 for connecting the IC 50 and the lead wire 80 of the transmitting / receiving coil is provided. In the solder part 100, the wiring pattern 140 and the lead wire 80 are connected by soldering. Electrically and mechanically connected.

In the non-contact type semiconductor device having such a configuration, in order to reduce the thickness, the IC 50 is mounted in the IC accommodating recess 40a in which the substrate 40 is counterbored during mounting.
The lead wire 80 of the transmitting / receiving coil is superimposed on the wiring pattern 140 of the substrate 40 on which the wiring 50 is mounted, and soldered.
After being connected to 40, I
C50 is sealed.

Further, Japanese Patent Application Laid-Open No. 9-161035 discloses a non-contact type semiconductor device as shown in FIG. In this non-contact type semiconductor device, a through hole 40b is formed in the substrate 40 of the IC module in order to reduce the thickness of the IC card, and an end of the wiring pattern 140 provided on the surface of the substrate 40 is formed inside the through hole 40b. It is connected to a terminal portion 40c arranged along the peripheral surface. The wiring pattern 140 is provided in the IC housing recess 40 a of the substrate 40.
It is electrically connected to the IC 50 housed therein. The end of the lead wire 80 of the transmitting / receiving coil arranged along the surface of the substrate 40 is inserted into the through hole 40b by bending it into an L shape, and is arranged along the inner peripheral surface of the through hole 40b. The terminal portion 40c is electrically and mechanically connected by solder.

[0007]

In the non-contact type semiconductor device shown in FIG.
In the case of a thickness of about 0.4 mm, the height of the soldering portion 10 is about 0.3 to 0 in order to overlap and solder the wiring pattern 140 on the substrate 40 and the lead wire 80 of the transmitting / receiving coil. There is a problem that the thickness of the IC card increases due to the rise of 0.7 mm. On the contrary,
In the non-contact type semiconductor device shown in FIG.
The lead wire 80 of the transmission / reception coil is inserted into the Ob in a bent shape of an L-shape, and the bulge of the soldering portion 100 is reduced as compared with the non-contact type semiconductor device shown in FIG. However, in order to install the lead wire 80 on the substrate 40, the thickness of the lead wire 80 is usually 0.1 to 0.5 mm.
About 2 mm thickens.

An object of the present invention is to solve such a problem. It is an object of the present invention to join a wiring pattern on a substrate and a lead wire of a transmitting / receiving coil in the thickness direction of the substrate at the joining portion. An object of the present invention is to provide a semiconductor device such as an IC card which suppresses the swelling of the semiconductor device and improves the reliability of the tensile strength at the joint.

[0009]

According to the present invention, there is provided a semiconductor device comprising:
A semiconductor device having an IC module in which an IC and other electronic components are mounted on a substrate, wherein the IC module is connected to a transmission / reception coil for transmitting and receiving signals without contact with an external device, In the vicinity of the end surface, while having an opening at the end surface, a through hole provided so as to penetrate in the thickness direction of the substrate, and a terminal provided along the inner surface of the through hole, in this terminal The lead wire of the transmitting / receiving coil is inserted and connected to the terminal.

The opening width of the terminal at the end face of the substrate is smaller than the maximum width in the same direction inside the terminal.

The end of the lead wire of the transmitting / receiving coil inserted into the terminal is bent or curved and deformed.

The end of the lead wire of the transmitting and receiving coil is coil-shaped, and the maximum width of the coil-shaped portion is larger than the opening width of the terminal end face of the terminal.

At the end of the terminal in the thickness direction of the substrate, there is formed a tapered portion which gradually expands toward the end face.

[0014]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is an exploded perspective view showing an IC card provided with a non-contact type semiconductor device of the present invention. Figure 1
As shown in FIG. 1, the non-contact type semiconductor device 1 has an IC module 2 formed by mounting an IC 5 and components 6 such as a resistor and a capacitor other than the IC on a substrate 4. It is housed in an IC module housing recess 21 provided in the base member 20. The card base portion 20 has a rectangular flat plate shape, and has a rectangular frame-like receiving / receiving coil receiving recess 22 formed along the outer peripheral edge thereof. The transmitting / receiving coil 3 is stored in the transmitting / receiving coil receiving recess 22. Receiving recess 22 for transmitting / receiving coil proximate one corner of card base portion 20
Is provided with an IC module storage recess 21 in which the IC module 2 is stored, and the IC module 2 is stored in the IC module storage recess 21. The lead wire 8 of the transmitting / receiving coil 3 is mechanically connected to the substrate 4 of the IC module 2 and is also electrically connected to the IC 5 provided on the IC module 2.
The card base member 20 is abutted and covered with a lid base member 23 having a rectangular thin plate shape similar to the card base member 20. The lid substrate 23 is adhered to the card substrate portion 20.

The material of the card base 20 is made of PVC (polyvinyl chloride) in consideration of environmental issues and the like.
T (polyethylene terephthalate) and PET-G
Polyester-based resins such as (glycol-modified polyester) are preferred.

The IC module 2 has an IC 5 mounted on a substrate 4 and has an IC such as a resistor and a capacitor depending on the circuit function.
Other components 6 may be mounted.

FIG. 2A is a side view of an essential part showing an example of an embodiment of a semiconductor device of the present invention provided on an IC card.
FIG. 2B is a plan view thereof. In this semiconductor device, an IC storage recess 4a is formed by counterboring to mount an IC 5 on a substrate 4.
An epoxy resin or the like 7 is applied on the substrate 4 and the IC 5 around the IC 5 to protect the IC 5, thereby sealing the IC 5. On the surface of the substrate 4, the IC 5 and the transmitting / receiving coil 3
A wiring pattern 14 for connecting to the lead wire 8 is provided.

The wiring pattern 14 is provided in the IC recess 4a.
And a first pattern portion 14a having a parallel portion at an appropriate distance from one side edge of the first pattern portion, and being disposed at an appropriate interval from each other so as to be orthogonal to the first pattern portion 14a. And second and third pattern portions 14b and 14c. First pattern 1
Each side of 4a is bent at a right angle toward each side of the IC storage recess 4a, and each end is bent at a right angle toward the IC storage recess 4a. Second and third pattern portions 14b and 14
In the first pattern portion 14a orthogonal to c, between the second and third pattern portions 14b and 14c, and on both sides of the second and third pattern portions 14b and 14c, other than ICs such as resistors and capacitors, respectively. Land portions 14d for mounting the components 6 are provided.

The second and third pattern portions 14b and 14c are connected to terminals 9 embedded near one end face of the substrate 4. The terminal 9 penetrates in the thickness direction of the substrate 4 and is formed by plating the inner peripheral surface of the through hole 4 b opened on the side surface of the substrate 4. The through hole 4b has an inner peripheral surface curved in an arc shape at an inner deep portion facing the opening, and has a U-shaped cross section in the surface direction of the substrate 4. The end of the lead wire 8 of the transmission / reception coil 3 is inserted into the terminal 9, and the lead wire 8 of the transmission / reception coil 3 is electrically and mechanically connected by a solder part 10 filling the terminal 9. ing.

In order to reduce the thickness of the IC card, the IC storage recess 4a formed by counterboring the substrate 4
After mounting the IC5, wire bonding is performed with an Au wire or an Al wire, and an epoxy resin or the like 7 is applied on a portion where the wire bonding with the IC5 is performed, thereby protecting the IC5 and the Au wire or the Al wire. And thinning the IC5 itself,
There is a method of flip-chip mounting on the substrate 4.

In the semiconductor device of the present invention, the lead wire 8 (wire diameter φ: 0.1 to 0.2 mm) of the transmitting / receiving coil 3 is
Substrate 4 of C module 2 (substrate thickness: 0.2 to 0.4 m
m) Terminal 9 of through-hole plating process formed on end face
Inserted in and soldered. Transceiver coil 3
Since the lead wire 8 is soldered into the terminal 9 from one of the openings provided in the end face of the board 4 or from the thickness direction of the board 4,
There is no need to dispose the lead wire 80 above. Further, in the embodiment of the present invention, since the solder portion 10 is also housed in the terminal 9, the board 4 including the swelling amount of the solder portion 10 is included.
The amount of swelling above is 0. It can be suppressed to less than 1 mm. When the diameter of the lead wire 8 of the transmitting / receiving coil 3 is φ0.2 mm, the terminal 9 is formed by cutting a through-hole land having an NC diameter φ0.4 mm, a land diameter φ1.8 mm, and a terminal pitch 4 mm by dicing or a die. Formed. The surface treatment of the terminal 9 is preferably Au flash / Ni plating in consideration of wettability with solder, but other methods such as solder plating and rust-preventive resin coating may be used. It is preferable to use 63Sn / 37Pb eutectic solder as a joining material between the terminal 9 and the lead wire 8 of the transmitting / receiving coil 3.

FIGS. 3A and 3B are a plan view and a side view of a terminal 9 of the non-contact type semiconductor device of the present invention.
Each of the terminals 9 connected by the wiring pattern 14 disposed on the substrate 4 has a cross section along the surface of the substrate 4 formed in an arc shape in which a part of a circle is cut out in an arc shape. The opening width dimension 11a at the four end faces is smaller than the maximum width dimension 12a in the same direction as the opening width 11 inside the terminal 9. As described above, by reducing the opening width dimension 11a of the terminal 9, even when a tensile force acts on the lead wire 8 of the transmitting and receiving coil 3 fixed to the solder portion 10 in the terminal 9, the lead wire 8 is fixed. The soldered portion 10 is hardly removed from the terminal 9, and the reliability of mechanical joining is improved.

The terminal 9 is not limited to the shape shown in FIGS. 3A and 3B, but has a substantially circular cross section along the surface of the substrate 4 as shown in FIG. A structure in which a region having a constant width is provided continuously to the opening, or a structure in which the inner surfaces continuously facing each other bulge in an arc shape as shown in FIG. FIG. 4
As shown in (c), from the opening toward the inner side,
The configuration may be a triangular configuration in plan view in which the width dimension is gradually increased. In any case, if the opening width 11 of the terminal 9 at the end face of the substrate is smaller than the maximum width 12 of the opening of the terminal 9, the reliability of the mechanical joining of the transmitting and receiving coil 3 with the lead wire 8 is improved. improves.

In FIGS. 2 and 3, the end of the lead wire 8 of the transmitting / receiving coil 3 inserted into the terminal 9 is not limited to the linear shape shown in FIGS. By bending or deforming the inserted portion into a shape such as a waveform and a coil shape instead of a linear shape, the mechanical connection strength between the lead wire 8 of the transmitting / receiving coil 3 and the solder portion 10 is improved, The tensile strength at the connection between the wiring pattern 14 and the lead wire 8 of the transmission / reception coil 3 is further improved.

For example, as shown in FIGS. 5A and 5B, the lead wire 8 of the transmitting / receiving coil 3 inserted into the terminal 9 is used.
May be formed in a coil shape, respectively. in this way,
Since the end 8a of the lead wire 8 of the transmission / reception coil 3 is formed in a coil shape, the width of the coiled portion of the coiled end 8a becomes larger than the width of the opening of the terminal 9, and the solder Even when the mechanical bonding strength with the part 10 is increased and a tensile force acts on the lead wire 8 of the transmitting and receiving coil 3, the lead wire 8 does not come off from the solder part 10. Further, the shape of the end 8a of the lead wire 8 of the transmitting / receiving coil 3 is not limited to the coil shape, but is changed into various shapes such as waveforms by bending or bending, and the width dimension of the deformed portion on the substrate end surface of the terminal 9 is changed. What is necessary is just to make the width dimension larger than the opening width 11. For example, as shown in FIGS. 6A and 6B, the lead wire 8 of the transmitting and receiving coil 3 is bent in a zigzag shape, or as shown in FIGS. 7A and 7B, a circular shape. It is good also as composition which bends.

Further, as shown in FIGS. 8A and 8B, each terminal 9 is provided with a tapered portion 13 which is gradually expanded at each end in the thickness direction of the substrate 4 toward the end face. Is also good. Thereby, the lead wire 8 of the transmitting / receiving coil 3
Can be easily inserted into the terminal 9 by sliding the end portion 8a along the thickness direction of the substrate 4. Therefore,
Even if the end 8a of the lead wire 8 of the transmitting / receiving coil 3 is deformed and its width is increased, insertion into the terminal 9 becomes easy. Also, the presence of the taper 13 at the time of soldering the terminal 9 and the end 8a facilitates positioning of the soldering iron with respect to the terminal 9 and improves workability.

As a method of forming the terminal 9, a general through-hole or a long hole is provided on the outer end surface of the terminal portion, and the above-mentioned through-hole or the long hole is formed when the outer shape is processed by a mold or a dicer. Can be manufactured by an existing method by cutting simultaneously, and there is no possibility that the number of steps is increased.

[0029]

According to the semiconductor device of the present invention, an opening is formed near the end face of a substrate mounted on the semiconductor device, and a through hole is provided so as to penetrate in the thickness direction of the substrate. Further, since terminals are provided along the inner surface of the through hole, and the leads of the transmitting and receiving coils are inserted and connected in the terminals, there is no need to arrange the leads of the transmitting and receiving coils on the substrate. ,further,
Since the solder portion is also almost completely filled in the terminal, the amount of protrusion of the solder portion in the thickness direction of the substrate at the joint portion can be reduced. As a result, the thickness of the semiconductor device can be reduced. Also, by making the opening width of the terminal at the end face of the substrate smaller than the maximum width inside the opening of the terminal, when a tensile force is applied to the lead wire, the lead wire becomes difficult to come off due to the wedge effect, and the joining portion The reliability with respect to the tensile strength is improved.

[Brief description of the drawings]

FIG. 1 is a non-contact type IC provided with a semiconductor device of the present invention.
FIG. 3 is an exploded perspective view showing the card.

FIGS. 2A and 2B are a side view and a plan view, respectively, of a main part showing an example of an embodiment of a semiconductor device of the present invention.

FIGS. 3A and 3B are a plan view and a side view of a terminal portion of the semiconductor device of the present invention, respectively.

FIGS. 4A, 4B, and 4C are plan views of terminal portions of another example of the semiconductor device of the present invention.

FIGS. 5A and 5B are a plan view and a side view of a terminal portion of another example of the semiconductor device of the present invention, respectively.

FIGS. 6 (a) and (b) are a plan view and a side view, respectively, of a tip end portion of a lead wire of a transmission / reception coil which is another example of the semiconductor device of the present invention.

FIGS. 7A and 7B are a plan view and a side view, respectively, of a tip end portion of a lead wire of a transmission / reception coil which is still another example of the semiconductor device of the present invention.

FIGS. 8A and 8B are a plan view and a side view of a terminal portion provided with a tapered portion of the semiconductor device of the present invention, respectively.

FIG. 9 is a cross-sectional view illustrating an example of a connection portion of a conventional non-contact type semiconductor device.

FIG. 10 is a cross-sectional view showing another example of a connection portion of a conventional non-contact type semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Non-contact type semiconductor device 2 IC module 3 Transmission / reception coil 4 Substrate 4a IC accommodation recess 4b Through hole 5 IC 6 Components 7 Epoxy resin etc. Width 11a Opening width dimension 12 Maximum width of terminal opening 12a Maximum width dimension 13 Taper 14 Wiring pattern 14a First pattern section 14b Second pattern section 14c Third pattern section 14d Land section 20 Card base section (with storage recess) 21 Receiving recess for IC module 22 Receiving recess for transmitting / receiving coil 23 Card base 40 Substrate 40a Receiving recess for IC 40b Through hole 40c Terminal 50 IC 70 Epoxy resin etc. 80 Lead wire of transmitting / receiving coil 100 Solder part 140 Wiring pattern

Claims (5)

[Claims] 1. A semiconductor device having an IC module in which an IC and other electronic components are mounted on a substrate, wherein the IC module is connected to a transmitting / receiving coil for transmitting / receiving a signal without contact with an external device. In the vicinity of an end surface of the substrate, the substrate has a through hole that is opened at the end surface and is provided so as to penetrate in the thickness direction of the substrate, and a terminal provided along an inner surface of the through hole. A semiconductor device wherein a lead wire of the transmitting / receiving coil is inserted into the terminal and connected to the terminal. 2. The semiconductor device according to claim 1, wherein an opening width of the terminal at an end face of the substrate is smaller than a maximum width in the same direction inside the terminal. 3. The semiconductor device according to claim 1, wherein an end of the lead wire of the transmitting / receiving coil inserted into the terminal is bent or curved and deformed. 4. The terminal according to claim 3, wherein the end of the lead wire of the transmission / reception coil has a coil shape, and the maximum width of the coil portion is larger than the opening width of the terminal end surface of the terminal. Semiconductor device. 5. The semiconductor device according to claim 1, wherein a tapered portion is formed at an end of the terminal in a thickness direction of the substrate, the tapered portion gradually expanding toward an end face.