JP2002094238A - Multilayer wiring board and its method of manufacture - Google Patents
Multilayer wiring board and its method of manufactureInfo
- Publication number
- JP2002094238A JP2002094238A JP2000275922A JP2000275922A JP2002094238A JP 2002094238 A JP2002094238 A JP 2002094238A JP 2000275922 A JP2000275922 A JP 2000275922A JP 2000275922 A JP2000275922 A JP 2000275922A JP 2002094238 A JP2002094238 A JP 2002094238A
- Authority
- JP
- Japan
- Prior art keywords
- layers
- layer
- wiring board
- multilayer wiring
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 31
- 238000007747 plating Methods 0.000 claims abstract description 27
- 229910052802 copper Inorganic materials 0.000 claims abstract description 24
- 239000010949 copper Substances 0.000 claims abstract description 24
- 238000005553 drilling Methods 0.000 claims description 15
- 238000009713 electroplating Methods 0.000 claims description 9
- 238000010030 laminating Methods 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 239000000853 adhesive Substances 0.000 claims description 7
- 230000001070 adhesive effect Effects 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 229910000679 solder Inorganic materials 0.000 abstract description 7
- 238000007664 blowing Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 195
- 238000010586 diagram Methods 0.000 description 9
- 239000011889 copper foil Substances 0.000 description 7
- 239000003054 catalyst Substances 0.000 description 4
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 229960003280 cupric chloride Drugs 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 101000917826 Homo sapiens Low affinity immunoglobulin gamma Fc region receptor II-a Proteins 0.000 description 1
- 101000917824 Homo sapiens Low affinity immunoglobulin gamma Fc region receptor II-b Proteins 0.000 description 1
- 102100029204 Low affinity immunoglobulin gamma Fc region receptor II-a Human genes 0.000 description 1
- 102100031083 Uteroglobin Human genes 0.000 description 1
- 108090000203 Uteroglobin Proteins 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、高密度な配線を可
能にする3層以上のn層を有する多層配線基板及びその
製造方法に関し、特にビルドアップ構造の多層配線基板
及その製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multilayer wiring board having three or more n-layers capable of high-density wiring and a method of manufacturing the same, and more particularly to a multilayer wiring board having a build-up structure and a method of manufacturing the same. It is.
【0002】[0002]
【従来の技術】近年、電子機器の高性能化、高密度化に
伴って、プリント配線基板等の配線基板もより一層の高
密度化が求められている。このような配線基板の配線密
度を高くする方法としては、以下のような方法が有効と
されている。 (1)配線幅、配線間隔、ランド径を小さくすること。 (2)多層化し、その層数を上げること。 (3)層間の導通経路となるビア穴の径(via径)を
小さくすること。 (4)貫通するビア穴(via hole)をなくする
こと。2. Description of the Related Art In recent years, with higher performance and higher densities of electronic devices, higher densities of wiring boards such as printed wiring boards have been demanded. As a method for increasing the wiring density of such a wiring board, the following method is considered to be effective. (1) Reduce the wiring width, wiring interval, and land diameter. (2) To increase the number of layers by increasing the number of layers. (3) The diameter (via diameter) of a via hole serving as a conductive path between layers is reduced. (4) Eliminate the penetrating via hole.
【0003】ところが、現状の配線基板においては、下
面に半田ボールの端子を格子状に配置したLSIの裏面
実装用エリアアレイ型のパッケージ(BGA)の場合、
貫通ビアを使用すると、配線を引き出すことができない
という問題がある。そこで、貫通ビア穴を使用せず、ビ
ア径を小さくできる図4乃至図6に示すようなビルドア
ップ構造の配線基板が使用されるようになってきてい
る。このビルドアップ構造の配線基板は文字通りビルド
アップ層を多層に重ね形成行くものであるため、ビルド
アップ層が多くなると必然的に工程が増えることにな
る。However, in the current wiring board, in the case of an area array type package (BGA) for mounting the back surface of an LSI in which terminals of solder balls are arranged in a lattice on the lower surface,
When the through via is used, there is a problem that the wiring cannot be drawn out. Therefore, a wiring board having a build-up structure as shown in FIGS. 4 to 6, which can reduce a via diameter without using a through via hole, has been used. Since the wiring board having the build-up structure literally has a multi-layered build-up layer, if the number of the build-up layers increases, the number of steps inevitably increases.
【0004】以下にビルドアップ層を多層に重ねるビル
ドアップ工法の工程例を示す。 (1)樹脂とパターンの密着を向上させるための前処理
工程 (2)接着材(絶縁層)の塗布工程 (3)硬化工程 (4)レーザーによる穴明け工程 (5)デスミア工程 (6)化学銅工程 (7)電気メッキ工程 (8)DFラミネート工程 (9)露光、エッチング、DF剥離工程The following is an example of the steps of a build-up method in which build-up layers are stacked in multiple layers. (1) Pretreatment step for improving the adhesion between resin and pattern (2) Application step of adhesive (insulating layer) (3) Curing step (4) Drilling step by laser (5) Desmearing step (6) Chemistry Copper process (7) Electroplating process (8) DF laminating process (9) Exposure, etching, DF peeling process
【0005】ビルドアップ工法は、有底のビア穴にメッ
キを付ける工法であり、有底ビア穴にメッキを付与する
ためには、有底ビア穴を「穴深さ/穴径≦1」に設計に
しなければならず、1層と3層の接続等を行う場合に
は、その間の絶縁層の距離以上の穴径にしなければなら
ないことから、更なる高密度化の障害となっている。ま
た、上記したBGAあるいはチップの大きさと同じか僅
かに大きい小型の半導体パッケージであるCSPの実装
を行う場合、貫通ビア穴が明いていると、実装時にビア
穴の中に半田が入り込んできてショートを起こす、所謂
ふき上がり現象による電気的障害の原因となるため、樹
脂や導電性のペースト等で貫通ビア穴を塞ぐ仕様として
いる。[0005] The build-up method is a method of plating a bottomed via hole. In order to apply plating to the bottomed via hole, the bottomed via hole is set to “hole depth / hole diameter ≦ 1”. In the case where one layer and three layers must be connected, the hole diameter must be equal to or larger than the distance between the insulating layers, and this is an obstacle to further increase in the density. In addition, when mounting a CSP, which is a small semiconductor package having the same size or slightly larger size as the BGA or the chip described above, if the through via hole is clear, solder may enter the via hole during mounting and short-circuit may occur. In such a case, the through-hole is closed with a resin or a conductive paste.
【0006】図4乃至図6は、上記したビルドアップ工
法により製造されたビルドアップ構造の多層配線基板を
示すものであり、いずれもの配線基板も1層と2層、1
層と3層、2層と3層間の接続を取れる工法によるもの
である。図4に示すものは、1層と3層、1層と2層の
穴明けを同時に行うことにより製造工程の短縮化を図っ
ているものであるが、1層と3層の穴明けはメッキが付
与可能なアスペクトである1以下にする必要があるた
め、ビア穴5の径が大きくなり高密度化の障害となって
いる。FIGS. 4 to 6 show a multi-layer wiring board having a build-up structure manufactured by the above-mentioned build-up method.
This is a method by which a connection can be established between the first and second layers and the second and third layers. FIG. 4 shows that the manufacturing process is shortened by simultaneously performing the drilling of one layer and three layers and the drilling of one layer and two layers. However, the drilling of one layer and three layers is performed by plating. Is required to be 1 or less, which is an aspect that can be provided, and the diameter of the via hole 5 becomes large, which is an obstacle to high density.
【0007】一方、図5に示すものは、1層と3層間の
接続を行う際に、ビア穴1の上にビア穴5を形成できな
いことから必要以上に接続エリア6を使用することにな
るため、それが高密度化の障害となっている。これに対
して図6に示すものは、有底ビア穴5を穴埋めすること
により、ビア穴5の上にビア穴5を形成可能とし、穴径
も1層と2層間に明けた径内で形成するようにしたもの
であるが、ビア穴5を埋める工程が増加すること、有底
ビア穴5を埋めることは技術的にも難しい面があること
等の問題を抱えている。これは有底ビア穴5を穴埋めす
る際、絶縁性又は導電性のペースト7を用いているが、
穴深さが深くなる程中に入った空気が抜けにくく空気が
溜まったり、抜けても凹みが残ったりするためである。On the other hand, the one shown in FIG. 5 uses the connection area 6 more than necessary because the via hole 5 cannot be formed on the via hole 1 when connecting between one layer and three layers. Therefore, it is an obstacle to high density. On the other hand, the one shown in FIG. 6 allows the via hole 5 to be formed on the via hole 5 by filling the bottomed via hole 5, and the hole diameter is within the diameter defined between the first and second layers. Although it is formed, there are problems that the number of steps for filling the via hole 5 increases, and that filling the bottomed via hole 5 is technically difficult. This uses an insulating or conductive paste 7 when filling the bottomed via hole 5.
This is because the deeper the hole is, the harder it is for the air that has entered to escape, and the air accumulates, and even if it escapes, a dent remains.
【0008】また、上記したビルドアップ工法による多
層配線基板によると、表層とその下の層の穴部が埋まら
ないため、実装時に半田ボールが穴部に取られ、半田量
が少なくなる問題が発生する。このため、BGAのパッ
ト部にビア穴をもってくることが難しくなり、BGAの
ランド間に接続用ランドを設ける必要が生ずるが、それ
が配線上のネックとなって高密度配線基板の実現を困難
にしている。Further, according to the multilayer wiring board formed by the above-described build-up method, since the holes in the surface layer and the layer under the surface layer are not filled, the solder balls are trapped in the holes at the time of mounting, and the amount of solder decreases. I do. For this reason, it is difficult to bring a via hole into the pad portion of the BGA, and it is necessary to provide connection lands between the lands of the BGA. However, this becomes a bottleneck in wiring and makes it difficult to realize a high-density wiring board. ing.
【0009】更に、ビルドアップ構造の多層配線基板に
おいては、表層(1層)と表層から3番目め層(3層)
の接続を行おうとすると、工程数が27工程(上記9工
程の3倍)にもなり、製造コストが増大するという問題
を有すると共に、1層と3層を接続する工程で樹脂の硬
化が2回も行われることになり、加工中の熱による歪み
が樹脂に発生して寸法精度が維持できなくなるという問
題を内包している。Further, in a multilayer wiring board having a build-up structure, a surface layer (one layer) and a third layer from the surface layer (three layers)
When the connection is attempted, the number of steps is increased to 27 (three times as large as the above nine), which causes a problem of an increase in manufacturing cost. This process is repeated, which causes a problem in that distortion due to heat during processing occurs in the resin and dimensional accuracy cannot be maintained.
【0010】[0010]
【発明が解決しようとする課題】本発明は、以上の問題
に対処するためになされたものであり、その第一の課題
は、ビルドアップ構造の多層配線基板において、1層と
3層、n層と(n−1)層間の接続を高密度に、かつ少
ない工程数で行うことができる多層配線基板及びその製
造方法を提供することにある。本発明のもう一つの課題
は、ビルドアップ工法によりメッキを付与すると同時に
穴埋めをすることができ、別途穴埋め工程を設けなくて
も、半田のふき上がりが発生しない構造の多層配線基板
を得ることができる多層配線基板及びその製造方法を提
供することにある。SUMMARY OF THE INVENTION The present invention has been made to address the above-mentioned problems. The first object of the present invention is to provide a multi-layer wiring board having a build-up structure with one and three layers, and n layers. It is an object of the present invention to provide a multilayer wiring board and a method for manufacturing the multilayer wiring board, in which connection between layers and the (n-1) layer can be performed at a high density and with a small number of steps. Another object of the present invention is to provide a multilayer wiring board having a structure in which plating can be applied at the same time as plating by a build-up method, and soldering does not occur even without providing a separate filling step. It is an object of the present invention to provide a multi-layer wiring board and a method of manufacturing the same.
【0011】[0011]
【課題を解決するための手段】上記した課題を解決する
ため、本発明にかかる多層配線基板は、3層以上のn層
を有し、1層と2層、1層と3層、2層と3層、n層と
(n−1)層、n層と(n−2)層、(n−1)層と
(n−2)層間を各々接続した多層配線基板において、
前記2層と3層、(n−1)層と(n−2)層の各層間
の絶縁層に40μmφ以下の穴を明け、同穴を銅メッキ
によって穴埋めし、前記1層と2層、2層と3層、n層
と(n−1)層及び(n−1)層と(n−2)層間を各
々接続したことを特徴とするもので、多層配線基板の2
層と3層、(n−1)層と(n−2)層の各層間の絶縁
層に40μmφ以下の穴を明けられ、この穴が銅メッキ
によって穴埋めされることで、1層と2層、2層と3
層、n層と(n−1)層及び(n−1)層と(n−2)
層間を各々接続することができるため、1層と2層、n
層と(n−1)層間の各重合配線層毎の穴明け及び銅メ
ッキによる単独工程で接続が可能になる。In order to solve the above-mentioned problems, a multilayer wiring board according to the present invention has three or more layers, one layer and two layers, one layer and three layers, and two layers. And three layers, n and (n-1) layers, n and (n-2) layers, and (n-1) and (n-2) layers.
A hole having a diameter of 40 μmφ or less is formed in the insulating layer between the two layers and the three layers and the (n-1) layer and the (n-2) layer, and the hole is filled with copper plating. It is characterized in that two layers and three layers, n layer and (n-1) layer, and (n-1) layer and (n-2) layer are connected, respectively.
A hole having a diameter of 40 μm or less is formed in the insulating layer between each of the layers (n-1) and (n-2), and the holes are filled with copper plating to form the first and second layers. , Two layers and three
Layer, n layer and (n-1) layer, and (n-1) layer and (n-2)
Since the layers can be connected to each other, one layer and two layers, n
The connection can be made in a single step by drilling and copper plating for each overlapped wiring layer between the layer and the (n-1) layer.
【0012】また、本発明にかかる多層配線基板は、上
記した多層配線基板において、前記銅メッキによって穴
埋めされた前記2層と3層及び(n−1)層と(n−
2)層間の接続部上にレーザーによって穴明けを行い、
1層と2層、n層と(n−1)層間の接続を形成し、1
層と3層、n層と(n−2)層間の接続を達成したこと
を特徴とするもので、接続が完了した各重合配線層をさ
らに積層し、既に接続されている所望の配線層に対する
接続をレーザーによる穴明けによって可能にすることが
できる。Further, in the multilayer wiring board according to the present invention, in the multilayer wiring board described above, the two layers, the three layers, the (n-1) layer, and the (n-
2) laser drilling on the connection between the layers,
A connection between one layer and two layers, an n layer and (n−1) layers is formed, and
And three layers, and between the n layer and the (n−2) layer, wherein each of the connected wiring layers is further laminated, and a desired wiring layer already connected is formed. The connection can be made possible by laser drilling.
【0013】更に、本発明にかかる多層配線基板は、上
記した多層配線基板において、前記穴の形状を楕円形も
しくは長円形としたことを特徴とするもので、穴形状を
楕円形もしくは長円形とすることによって、穴埋め部の
抵抗値を回路部の抵抗値と同等にすることができる。Further, the multilayer wiring board according to the present invention is characterized in that, in the multilayer wiring board described above, the shape of the hole is elliptical or elliptical, and the hole shape is elliptical or elliptical. By doing so, the resistance value of the filling portion can be made equal to the resistance value of the circuit portion.
【0014】上記した課題を解決するため、本発明にか
かる多層配線基板の製造方法は、3層以上のn層を有
し、1層と2層、1層と3層、2層と3層、n層と(n
−1)層、n層と(n−2)層、(n−1)層と(n−
2)層間を各々接続した多層配線基板の製造方法におい
て、前記1層と2層、1層と3層、2層と3層、n層と
(n−1)層、n層と(n−2)層、(n−1)層と
(n−2)層間を各々接続するために各層間の絶縁層に
穴を明ける工程と、前記工程で明けられた穴に対して導
電性物質を寄与させ、電気メッキを施すことにより穴埋
めをする工程と、前記工程で穴埋めが施された絶縁材に
回路を形成する工程と、前記回路が形成された前記2
層、3層、(n−1)層、(n−2)層に前記1層、n
層及びその他の層からなる配線層を絶縁性接着材により
積層する工程と、 前記積層後に、1層と2層、n層と
(n−1)層の各層間の絶縁層に穴を明ける工程と、前
記工程で明けられた1層と2層、n層と(n−1)層間
の穴に導電性物質を寄与させ、電気メッキを施す工程と
からなることを特徴とするもので、このような方法によ
ると各層間の絶縁層に明けた穴を電気メッキを付与する
と同時に穴埋めをすることができるため、別に穴埋め工
程を設けなくてもよく、従来のビルドアップ工法より工
程を少なくすることができると共に、半田のふき上がり
が発生しない構造の多層配線基板を得ることができる。In order to solve the above-mentioned problems, a method for manufacturing a multilayer wiring board according to the present invention comprises three or more layers, one layer and two layers, one layer and three layers, and two layers and three layers. , N layers and (n
-1) layer, n layer and (n-2) layer, (n-1) layer and (n-
2) In the method for manufacturing a multilayer wiring board in which the layers are connected to each other, the above-mentioned one layer and two layers, one layer and three layers, two layers and three layers, n layers and (n-1) layers, and n layers and (n- 2) a step of forming holes in the insulating layer between the layers to connect the (n-1) layer and the (n-2) layer, and a conductive substance contributing to the holes formed in the above steps; Filling a hole by electroplating; forming a circuit on the insulating material filled in the above step; and forming the circuit on the insulating material.
Layer, three layers, (n-1) layer, and (n-2) layer, the one layer, n
Laminating a wiring layer composed of a layer and other layers with an insulating adhesive; and, after the lamination, forming a hole in an insulating layer between each of one layer and two layers, and n layers and (n-1) layers. And a step of applying an electroplating by applying a conductive substance to the holes between the first and second layers and the n-layer and the (n-1) layer formed in the above step, and performing electroplating. According to such a method, the holes formed in the insulating layers between the layers can be filled at the same time as the electroplating is applied, so that there is no need to provide a separate hole filling step, and the number of steps is smaller than that of the conventional build-up method. And a multilayer wiring board having a structure in which solder does not bleed up can be obtained.
【0015】また、本発明にかかる多層配線基板の製造
方法は、上記した多層配線基板の製造方法において、前
記1層と2層及びn層と(n−1)層間の穴明けを、レ
ーザー加工にて行うことを特徴とするもので、レーザー
加工にて穴明けを行うことにより、楕円形もしくは長円
形の穴を容易に穴明けすることができる。In the method for manufacturing a multilayer wiring board according to the present invention, in the method for manufacturing a multilayer wiring board described above, the drilling between the first and second layers and the n-layer and the (n-1) -layer may be performed by laser processing. By performing the drilling by laser processing, an elliptical or elliptical hole can be easily drilled.
【0016】[0016]
【発明の実施の形態】以下に本発明の実施形態を図1乃
至図3に基づいて説明する。図1は本発明の第1実施形
態にかかる多層配線基板の構成図、図2の(A)及び
(B)は各々穴の形状を示す構成図、図3は本発明の第
2実施形態にかかる多層配線基板の構成図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS. FIG. 1 is a configuration diagram of a multilayer wiring board according to a first embodiment of the present invention, FIGS. 2A and 2B are configuration diagrams each showing a shape of a hole, and FIG. It is a block diagram of such a multilayer wiring board.
【0017】図1に示すように3層以上のn層を有し、
1層と2層、1層と3層、2層と3層、n層と(n−
1)層、n層と(n−2)層、(n−1)層と(n−
2)層間を各々接続した多層配線基板は、絶縁性の接着
材を用いて積層される。この絶縁性の接着材としては、
ガラス−エポキシ樹脂、ガラス−BT樹脂、ガラス−ポ
リイミド樹脂、ポリイミドフィルム、エポキシフィル
ム、液晶ポリマー繊維にエポキシを含浸させたもの、液
晶ポリマーにBTを含浸させたもの等が用いられ、これ
らの接着材は熱処理後、硬化されて各層間の絶縁層を構
成することになる。なお、配線としては、銅配線等の金
属が用いられる。As shown in FIG. 1, there are three or more n layers,
1 layer and 2 layers, 1 layer and 3 layers, 2 layers and 3 layers, n layer and (n−
1) layer, n layer and (n-2) layer, (n-1) layer and (n-
2) The multi-layer wiring boards each connecting the layers are laminated using an insulating adhesive. As this insulating adhesive,
Glass-epoxy resin, glass-BT resin, glass-polyimide resin, polyimide film, epoxy film, liquid crystal polymer fiber impregnated with epoxy, liquid crystal polymer impregnated with BT, etc. are used. Is cured after heat treatment to form an insulating layer between the layers. Note that a metal such as a copper wiring is used as the wiring.
【0018】2層と3層、(n−1)層と(n−2)層
間の接続において、絶縁層に明ける穴8の穴明けはドリ
ルあるいはレーザー加工によりことになるが、特に加工
性の面からレーザー加工が望ましく、また、穴8の径は
回路形成及び穴埋めを考えると40μmφ以下であるこ
とが望ましい。穴径が大きくなると、穴埋めのために付
与するメッキの厚さが厚くなって、配線パターンを形成
する際に細線が形成できなくなり、40μmφ以上では
目的とする細線パターンが得られなくなる。In the connection between the two layers and the three layers and between the (n-1) layer and the (n-2) layer, the hole 8 formed in the insulating layer is formed by drilling or laser processing. Laser processing is desirable from the surface, and the diameter of the hole 8 is desirably 40 μmφ or less in consideration of circuit formation and hole filling. When the hole diameter becomes large, the thickness of the plating applied for filling the hole becomes large, so that a fine line cannot be formed when a wiring pattern is formed. When the hole diameter is 40 μmφ or more, a target fine line pattern cannot be obtained.
【0019】また、穴埋め部の抵抗が40μmφでは回
路部の抵抗値より高くなるため、同等な抵抗値にするこ
とが望ましく、穴形状を図2の(A)、(B)に示すよ
うに楕円形8aもしくは長円形8bとして抵抗値を回路
部と同等にしている。なお、穴8に対して導電性の物質
を吸着させる場合は、Pd、カーボン、導電性高分子等
が用いられ、その後に無電解メッキを行ってもよい。ま
た、上記物質を吸着させる代わりに蒸着法等によって薄
い導電性の被膜を形成してもよい。Further, when the resistance of the hole filling portion is 40 μmφ, the resistance value is higher than the resistance value of the circuit portion. Therefore, it is desirable to make the resistance values equal to each other, and the hole shape is elliptical as shown in FIGS. 2A and 2B. The resistance value is made equal to that of the circuit section as the shape 8a or the oval 8b. When a conductive substance is adsorbed to the hole 8, Pd, carbon, a conductive polymer, or the like is used, and then electroless plating may be performed. Further, instead of adsorbing the above substance, a thin conductive film may be formed by a vapor deposition method or the like.
【0020】一方、穴埋めのために付与するメッキ9
は、通常のプリント配線基板に使用されている銅メッキ
9でよく、20μm以上のメッキ9を付けることにより
穴埋めすることができる。このメッキは無電解メッキに
より行ってもよく、また、上記した絶縁材料に配線のネ
ガパターンを形成し、電気銅メッキ法により穴埋めと回
路部へのメッキ付けを同時に行っても問題はない。On the other hand, plating 9 applied for filling holes
May be a copper plating 9 used for a normal printed wiring board, and the hole can be filled by applying a plating 9 of 20 μm or more. This plating may be performed by electroless plating, or there is no problem if a negative pattern of the wiring is formed on the above-described insulating material, and the filling of the holes and the plating on the circuit portion are simultaneously performed by the electrolytic copper plating method.
【0021】ここで形成される配線は、上記した絶縁層
に銅箔を張ったものを用いて配線の形成を行う面にエッ
チングマスクを形成し、配線パターン部以外の銅箔を取
り除くサブトラスト法により形成することができる。エ
ッチングレジストとしては、液状、フィルム状、あるい
は電着レジスト等のいずれを用いてもよい。The wiring formed here is a subtrust method in which an etching mask is formed on the surface on which the wiring is to be formed by using the above-described insulating layer covered with copper foil, and the copper foil other than the wiring pattern portion is removed. Can be formed. As the etching resist, any of a liquid, a film, and an electrodeposition resist may be used.
【0022】銅配線を形成した材料を積層する方法とし
ては、各層間の配線の位置を合わせた後、接着材を用い
て接合する方法を用いることができる。なお、上記した
2層と3層、(n−1)層と(n−2)層間の接続部に
レーザー加工により穴明けを行う場合のレーザーとして
は、炭酸ガスレーザー、YAGレーザー、UV−YAG
レーザー、エキシマレーザー等のいずれによっても行う
ことができる。以下に具体的実施例について説明する。As a method of laminating the material on which the copper wirings are formed, a method of adjusting the positions of the wirings between the respective layers and joining them with an adhesive can be used. The laser used for drilling the connection between the two and three layers and the (n-1) layer and the (n-2) layer by laser processing includes a carbon dioxide gas laser, a YAG laser, and a UV-YAG laser.
It can be performed by any of a laser and an excimer laser. Hereinafter, specific examples will be described.
【0023】実施例1(図1参照) 先ず、銅張り積層板(松下電工株式会社製のR−170
5:基材厚さ0.06mm、銅箔厚さ12μm)上にU
V−YAGレーザーによって20μmφの穴8を明け
た。次いでPb触媒溶液によって処理した後、化学銅メ
ッキを施した。その後電気銅メッキを表面に20μm施
し、この銅メッキを図1に示すように穴埋めメッキ9と
して穴8の穴埋めを行った。Example 1 (see FIG. 1) First, a copper-clad laminate (R-170 manufactured by Matsushita Electric Works, Ltd.)
5: base material thickness 0.06 mm, copper foil thickness 12 μm)
A hole 8 having a diameter of 20 μm was formed by a V-YAG laser. Then, after treatment with a Pb catalyst solution, chemical copper plating was applied. Thereafter, 20 μm of electrolytic copper plating was applied to the surface, and as shown in FIG.
【0024】この銅メッキ後の積層板の表面にレジスト
(旭化成株式会社製のAQ−2588)をラミネートす
ることにより、露光、現像を行い、回路パターン状にレ
ジスト膜を形成した。次に露出部の銅箔を塩化第二銅溶
液によりエッチングして、線幅40μm、配線間隙40
μmの銅配線を形成した。この銅張り積層板に銅配線を
形成した面にフィルム接着材を介在し、位置合わせした
後、プレスにより積層を行って6層の積層板を得た。By laminating a resist (AQ-2588 manufactured by Asahi Kasei Corporation) on the surface of the copper-plated laminate, exposure and development were performed to form a resist film in a circuit pattern. Next, the exposed portion of the copper foil is etched with a cupric chloride solution to obtain a line width of 40 μm and a wiring gap 40.
A μm copper wiring was formed. A film adhesive was interposed between the copper-clad laminate and the surface on which the copper wiring was formed, and after positioning, the laminate was pressed to obtain a six-layer laminate.
【0025】これにビーム径80μmのUV−YAGレ
ーザーによって上面の銅配線部から1層と2層、6層と
5層間の接続部に両面からレーザー穴明けを行い、ビア
穴5の形成を行った。次いでPb触媒溶液で処理した
後、無電解メッキを施し、更に電解メッキを施した。こ
の銅表面にドライフィルムレジスト(旭化成株式会社製
のAQ−2588)をラミネートして、露光、現像を行
い、回路の形成を行った。A via hole 5 is formed by using a UV-YAG laser having a beam diameter of 80 μm to form a laser hole from both sides of the copper wiring portion on the upper surface and connecting portions between the first and second layers and the sixth and fifth layers. Was. Next, after treatment with a Pb catalyst solution, electroless plating was performed, and further, electrolytic plating was performed. A circuit was formed by laminating a dry film resist (AQ-2588 manufactured by Asahi Kasei Corporation) on the copper surface, performing exposure and development.
【0026】以上により図1に示すような220mm×
220mm×厚さ0.6mmで全層数6層の多層配線基
板を作成した。この多層配線基板を用い、−65度⇔1
25度のヒートサイクル試験(MIL−STD−202
に準拠)を1000サイクル行ったが、層間剥離及び基
板のクラック等の発生はなかった。そして、得られた多
層配線基板は、従来のスルホール基板に比べて回路密度
を約4倍に向上でき、実装の高密度化を図ることができ
た。また、工程数も従来のビルドアップ工法に比べて1
8工程も少ない工程で製造することができた。As described above, 220 mm ×
A multilayer wiring board of 220 mm × 0.6 mm in thickness and 6 layers in total was prepared. Using this multilayer wiring board, −65 degrees⇔1
25 degree heat cycle test (MIL-STD-202)
Was performed for 1000 cycles, but no delamination or cracking of the substrate occurred. The obtained multilayer wiring board was able to improve the circuit density about four times as compared with the conventional through-hole board, and was able to increase the mounting density. In addition, the number of processes is one compared to the conventional build-up method.
It could be manufactured in as few as eight steps.
【0027】実施例2(図3参照) 先ず、銅張り積層板(松下電工株式会社製のR−170
5:基材厚さ0.06mm、銅箔厚さ12μm)上にU
V−YAGレーザーによって25μmφの穴8を明け
た。次いでPb触媒溶液によって処理した後、化学銅メ
ッキを施した。その後電気銅メッキを表面に20μm施
し、この銅メッキによって穴8の穴埋めを行った。Example 2 (see FIG. 3) First, a copper-clad laminate (R-170 manufactured by Matsushita Electric Works, Ltd.)
5: base material thickness 0.06 mm, copper foil thickness 12 μm)
A hole 8 having a diameter of 25 μm was formed by a V-YAG laser. Then, after treatment with a Pb catalyst solution, chemical copper plating was applied. After that, electrolytic copper plating was applied to the surface by 20 μm, and the holes 8 were filled with the copper plating.
【0028】この銅メッキ後の積層板の表面にレジスト
(旭化成株式会社製のAQ−2588)をラミネートす
ることにより、露光、現像を行い、回路パターン状にレ
ジスト膜を形成した。次に露出部の銅箔を塩化第二銅溶
液によりエッチングして、線幅40μm、配線間隙40
μmの銅配線を形成した。この銅張り積層板に松下電工
株式会社製プリプレグ(材料厚さ0.06mm)と日興
グールド株式会社製の銅箔(厚さ12μm)を表裏重ね
合わせてプレスにより積層し、図3に示すような4層の
積層板を2組作成した。By laminating a resist (AQ-2588 manufactured by Asahi Kasei Corporation) on the surface of the copper-plated laminate, exposure and development were performed to form a resist film in a circuit pattern. Next, the exposed portion of the copper foil is etched with a cupric chloride solution to obtain a line width of 40 μm and a wiring gap 40.
A μm copper wiring was formed. A prepreg (material thickness: 0.06 mm) manufactured by Matsushita Electric Works Co., Ltd. and a copper foil (thickness: 12 μm) manufactured by Nikko Gould Co., Ltd. were superposed on the front and back sides of the copper-clad laminate and laminated by pressing, as shown in FIG. Two sets of four-layer laminates were prepared.
【0029】これにビーム径80μmのUV−YAGレ
ーザーによって上面の銅配線部から3層と4層、5層と
6層間の接続部にレーザー穴明けを行い、ビア穴5の形
成を行った。次いでPb触媒溶液で処理した後、無電解
メッキを施し、更に電解メッキを施した。この銅表面に
ドライフィルムレジスト(旭化成株式会社製のAQ−2
588)をラミネートして、露光、現像を行い、4層
目、5層目の回路を形成した。A via hole 5 was formed in a connection portion between the third, fourth, fifth, and sixth layers from the copper wiring portion on the upper surface by a UV-YAG laser having a beam diameter of 80 μm. Next, after treatment with a Pb catalyst solution, electroless plating was performed, and further, electrolytic plating was performed. A dry film resist (AQ-2 manufactured by Asahi Kasei Corporation)
588) were laminated, exposed and developed to form fourth and fifth layer circuits.
【0030】2組の4層板をパターン形成している面が
4層目と5層目になるように、松下電工株式会社製プリ
プレグを接着材としてプレスにより積層し、図3に示す
ような8層のプリンド配線基板を作成した。更に、1層
と2層、n層と(n−1)層間にビア穴5の穴明けを行
い、化学銅メッキ、電解銅メッキにてメッキを付与し、
レジストをラミネートした後、露光現像エッチングを行
って回路パターンを形成した。A prepreg manufactured by Matsushita Electric Works, Ltd. was laminated by pressing so that two sets of four-layer plates were patterned on the fourth and fifth layers, as shown in FIG. An eight-layer printed wiring board was prepared. Further, a via hole 5 is formed between one layer and two layers, and between the n layer and the (n-1) layer, and plated by chemical copper plating or electrolytic copper plating.
After laminating the resist, exposure and development etching were performed to form a circuit pattern.
【0031】これにより図3に示すように1層と2層、
1層と3層、1層と4層、2層と3層、2層と4層、3
層と4層の接続、及びn層と(n−1)層、n層と(n
−2)層、n層と(n−3)層、(n−1)層と(n−
2)層、(n−1)層と(n−3)層、(n−2)層と
(n−3)層の接続が可能となり、配線の自由度が非常
に高い高密度配線基板を得ることができた。また、上記
の多層配線基板を用い、−65度⇔125度のヒートサ
イクル試験を1000サイクル行ったが、層間剥離や基
板のクラック等の発生はみられなかった。Thus, as shown in FIG. 3, one layer and two layers,
1 and 3 layers, 1 and 4 layers, 2 and 3 layers, 2 and 4 layers, 3
Layer and four layers, n layer and (n-1) layer, n layer and (n
-2) layer, n layer and (n-3) layer, (n-1) layer and (n-
2) layer, (n-1) layer and (n-3) layer, (n-2) layer and (n-3) layer can be connected, and a high-density wiring board having very high degree of freedom in wiring can be provided. I got it. In addition, a heat cycle test at −65 ° C.⇔125 ° C. was performed 1000 times using the multilayer wiring board, but no delamination or cracking of the board was observed.
【0032】[0032]
【発明の効果】以上に詳細に説明したように、本発明に
かかる多層配線基板及びその製造方法によると、3層以
上のn層を有する多層配線基板で、1層と3層、n層と
(n−1)層間の接続を高密度に、かつ少ない工程数で
行うことができるビルドアップ構造の多層配線基板を得
ることができる。また、ビルドアップ工法によりメッキ
を付与すると同時に穴埋めをすることができるため、別
途穴埋め工程を設けなくても、半田のふき上がりが発生
しない構造の多層配線基板を得ることができる。As described above in detail, according to the multilayer wiring board and the method of manufacturing the same according to the present invention, a multilayer wiring board having three or more n layers has one layer, three layers, and n layers. (N-1) It is possible to obtain a multilayer wiring board having a build-up structure in which connection between layers can be performed at high density and with a small number of steps. Further, since the filling can be performed at the same time as the plating is applied by the build-up method, it is possible to obtain a multilayer wiring board having a structure in which the solder does not blow up without providing a separate filling step.
【図1】本発明の第1実施形態にかかる多層配線基板の
構成図である。FIG. 1 is a configuration diagram of a multilayer wiring board according to a first embodiment of the present invention.
【図2】(A)及び(B)は各々穴の形状を示す構成図
である。FIGS. 2A and 2B are configuration diagrams each showing a shape of a hole.
【図3】本発明の第2実施形態にかかる多層配線基板の
構成図である。FIG. 3 is a configuration diagram of a multilayer wiring board according to a second embodiment of the present invention.
【図4】従来の多層配線基板の1例の構成図である。FIG. 4 is a configuration diagram of an example of a conventional multilayer wiring board.
【図5】従来の多層配線基板の第2例の構成図である。FIG. 5 is a configuration diagram of a second example of a conventional multilayer wiring board.
【図6】従来の多層配線基板の第3例の構成図である。FIG. 6 is a configuration diagram of a third example of a conventional multilayer wiring board.
1,2,3,4…層、n,(n−1),(n−2),
(n−3)…層、5…ビア穴、8,8a,8b…穴、9
…穴埋めメッキ1,2,3,4 ... layers, n, (n-1), (n-2),
(N-3): layer, 5: via hole, 8, 8a, 8b: hole, 9
… Plating filling
───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 5E317 AA24 BB01 BB11 CC33 CC53 CD32 GG16 5E346 AA43 CC04 CC09 CC10 CC32 FF03 FF07 FF15 GG15 GG18 HH32 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 5E317 AA24 BB01 BB11 CC33 CC53 CD32 GG16 5E346 AA43 CC04 CC09 CC10 CC32 FF03 FF07 FF15 GG15 GG18 HH32
Claims (5)
層と3層、2層と3層、n層と(n−1)層、n層と
(n−2)層、(n−1)層と(n−2)層間を各々接
続した多層配線基板において、 前記2層と3層、(n−1)層と(n−2)層の各層間
の絶縁層に40μmφ以下の穴を明け、同穴を銅メッキ
によって穴埋めし、前記1層と2層、2層と3層、n層
と(n−1)層及び(n−1)層と(n−2)層間を各
々接続したことを特徴とする多層配線基板。1. An apparatus comprising three or more n layers, one layer and two layers,
Layer and three layers, two layers and three layers, n layers and (n-1) layers, n layers and (n-2) layers, and multilayer wirings connecting (n-1) and (n-2) layers, respectively. In the substrate, a hole having a diameter of 40 μmφ or less is formed in an insulating layer between the two layers and the three layers and the (n-1) layer and the (n-2) layer, and the hole is filled with copper plating. A multilayer wiring board, wherein two layers, two layers and three layers, n layers and (n-1) layers, and (n-1) layers and (n-2) layers are connected.
2層と3層及び(n−1)層と(n−2)層間の接続部
上にレーザーによって穴明けを行い、1層と2層、n層
と(n−1)層間の接続を形成し、1層と3層、n層と
(n−2)層間の接続を達成したことを特徴とする請求
項1に記載の多層配線基板。2. A laser drilling is performed on a connection portion between the two and three layers and between the (n-1) layer and the (n-2) layer, which is filled with the copper plating, thereby forming one and two layers. 2. The multilayer wiring board according to claim 1, wherein a connection between the n layer and the (n-1) layer is formed, and a connection between the first layer and the three layers and a connection between the n layer and the (n-2) layer are achieved.
したことを特徴とする請求項1又は2のいずれかに記載
の多層配線基板。3. The multilayer wiring board according to claim 1, wherein the shape of the hole is an ellipse or an ellipse.
層と3層、2層と3層、n層と(n−1)層、n層と
(n−2)層、(n−1)層と(n−2)層間を各々接
続した多層配線基板の製造方法において、 前記1層と2層、1層と3層、2層と3層、n層と(n
−1)層、n層と(n−2)層、(n−1)層と(n−
2)層間を各々接続するために各層間の絶縁層に穴を明
ける工程と、 前記工程で明けられた穴に対して導電性物質を寄与さ
せ、電気メッキを施すことにより穴埋めをする工程と、 前記工程で穴埋めが施された絶縁層に回路を形成する工
程と、 前記回路が形成された前記2層、3層、(n−1)層、
(n−2)層に前記1層、n層及びその他の層からなる
配線層を絶縁性接着材により積層する工程と、 前記積層後に、1層と2層、n層と(n−1)層の各層
間の絶縁層に穴を明ける工程と、 前記工程で明けられた1層と2層、n層と(n−1)層
間の穴に導電性物質を寄与させ、電気メッキを施す工程
とからなることを特徴とする多層配線基板の製造方法。4. There are three or more n layers, one layer and two layers,
Layer and three layers, two layers and three layers, n layers and (n-1) layers, n layers and (n-2) layers, and multilayer wirings connecting (n-1) and (n-2) layers, respectively. In the method for manufacturing a substrate, the one layer and two layers, the one layer and three layers, the two layers and three layers, the n layer and (n
-1) layer, n layer and (n-2) layer, (n-1) layer and (n-
2) a step of drilling holes in the insulating layer between the layers to connect the layers, and a step of filling the holes drilled in the step with a conductive material and performing electroplating, Forming a circuit on the insulating layer in which the holes have been filled in the step; and forming the circuit on the two, three, or (n-1) layers;
(N-2) a step of laminating a wiring layer composed of the one layer, the n layer, and the other layer with an insulating adhesive, and after the lamination, one layer and two layers, and n layer and (n-1) Drilling holes in the insulating layer between the layers, and electroplating by applying a conductive substance to the holes between the one and two layers and between the n layer and the (n-1) layer. A method for manufacturing a multilayer wiring board, comprising:
間の穴明けを、レーザー加工にて行うことを特徴とする
請求項4に記載の多層配線基板の製造方法。5. The method for manufacturing a multilayer wiring board according to claim 4, wherein the drilling between the first and second layers and between the n-layer and the (n-1) -layer is performed by laser processing.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000275922A JP2002094238A (en) | 2000-09-12 | 2000-09-12 | Multilayer wiring board and its method of manufacture |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000275922A JP2002094238A (en) | 2000-09-12 | 2000-09-12 | Multilayer wiring board and its method of manufacture |
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| JP2002094238A true JP2002094238A (en) | 2002-03-29 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016127248A (en) * | 2015-01-08 | 2016-07-11 | 日本特殊陶業株式会社 | Multilayer wiring board |
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2000
- 2000-09-12 JP JP2000275922A patent/JP2002094238A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016127248A (en) * | 2015-01-08 | 2016-07-11 | 日本特殊陶業株式会社 | Multilayer wiring board |
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