JP2002092864A - Magnetic recording medium and magnetic recording device - Google Patents
Magnetic recording medium and magnetic recording deviceInfo
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- JP2002092864A JP2002092864A JP2000272558A JP2000272558A JP2002092864A JP 2002092864 A JP2002092864 A JP 2002092864A JP 2000272558 A JP2000272558 A JP 2000272558A JP 2000272558 A JP2000272558 A JP 2000272558A JP 2002092864 A JP2002092864 A JP 2002092864A
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Abstract
(57)【要約】
【課題】 磁気記録媒体及び磁気記録装置に関し、十分
微細化した磁性結晶粒を再現性良く成長させて、S/N
比を高める。
【解決手段】 Al系合金基板或いはガラス基板からな
る非磁性基板1上にアモルファス膜2を介してCo層或
いはCo合金層のいずれかからなる島状膜のシード層3
を設ける。
PROBLEM TO BE SOLVED: To provide a magnetic recording medium and a magnetic recording apparatus by growing sufficiently fine magnetic crystal grains with good reproducibility and achieving a high S / N ratio.
Increase ratio. SOLUTION: An island-like seed layer 3 made of either a Co layer or a Co alloy layer is provided on a non-magnetic substrate 1 made of an Al-based alloy substrate or a glass substrate via an amorphous film 2.
Is provided.
Description
【0001】[0001]
【発明の属する技術分野】本発明は磁気記録媒体及び磁
気記録装置に関するものであり、特に、低ノイズで高出
力を得るために微細な結晶粒を形成するためのシード
(seed)層の構成に特徴のある磁気記録媒体及び磁
気記録装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic recording medium and a magnetic recording apparatus, and more particularly to a seed layer for forming fine crystal grains to obtain high output with low noise. The present invention relates to a magnetic recording medium and a magnetic recording device having features.
【0002】[0002]
【従来の技術】近年のハードディスク装置等の磁気記録
装置の記録密度の上昇は著しく、そのため、記録ビット
間は記録密度の上昇に応じて狭くなってきている。よ
り、小さな記録ビットを磁気記録媒体に形成するために
は、記録ヘッドの高性能化もさることながら、記録密度
を高くすると再生出力が低下するとともにノイズが増加
してS/N比が低下してしまうので、磁気記録媒体の低
ノイズ化による高S/N化が重要になる。2. Description of the Related Art In recent years, the recording density of a magnetic recording device such as a hard disk device has increased remarkably, and therefore, the interval between recording bits has become narrower as the recording density has increased. In order to form smaller recording bits on a magnetic recording medium, when the recording density is increased, the reproduction output is reduced, noise is increased, and the S / N ratio is reduced, as well as the performance of the recording head. Therefore, it is important to increase the S / N by reducing the noise of the magnetic recording medium.
【0003】そこで、従来の磁気記録媒体においては、
高S/N化のために様々な試みが成されており、例え
ば、下地層の結晶配向性の制御や磁性層の結晶配向性の
向上、格子整合、或いは、中間層の採用等の多数の方法
が挙げられる。Therefore, in a conventional magnetic recording medium,
Various attempts have been made to increase the S / N ratio. For example, many attempts have been made to control the crystal orientation of the underlayer, to improve the crystal orientation of the magnetic layer, to perform lattice matching, or to employ an intermediate layer. Method.
【0004】また、アルミ基板を用いた場合には、通
常、その直上に設けるCrやCr合金の結晶配向性を高
めるために下地層としてその組成比を制御することによ
ってアモルファス状のNiPを設けている。これは、磁
性層を構成するCoCrPtTa等のCo合金の面内配
向性を高めるためには、無配向な膜、即ち、アモルファ
ス膜が必要になるためである。When an aluminum substrate is used, amorphous NiP is usually provided by controlling the composition ratio of a base layer in order to enhance the crystal orientation of Cr or a Cr alloy provided thereabove. I have. This is because a non-oriented film, that is, an amorphous film is required to increase the in-plane orientation of a Co alloy such as CoCrPtTa forming the magnetic layer.
【0005】即ち、磁性層を構成するCoCrPtTa
等のCo合金の面内配向性を高めるために、中間層とし
てCr系合金を用いた場合、bcc(体心立方)構造を
有するCr系合金をCr(200)に配向させる必要が
あり、このため、Cr系合金層の直下のNiP層等の下
地層はアモルファスであることが大前提であった。That is, CoCrPtTa constituting the magnetic layer
When a Cr-based alloy is used as the intermediate layer in order to enhance the in-plane orientation of a Co alloy such as that described above, a Cr-based alloy having a bcc (body-centered cubic) structure needs to be oriented to Cr (200). For this reason, it was a major premise that the underlying layer such as the NiP layer immediately below the Cr-based alloy layer was amorphous.
【0006】これは、Cr系合金層の表面が(200)
面になるように配向させた場合、(200)面における
格子間隔の21/2 倍が、六方細密構造(hcp)のCo
CrPtTa等の磁性層のc軸方向の格子間隔とほぼ一
致するためであり、その結果、c軸が水平になって(1
10)面が主面になるように成長して磁性層が面内配向
することになる。This is because the surface of the Cr-based alloy layer has a (200)
When oriented so as to be a plane, 2 1/2 times the lattice spacing in the (200) plane is a hexagonal dense structure (hcp) of Co.
This is because the lattice spacing in the c-axis direction of the magnetic layer of CrPtTa or the like substantially matches, and as a result, the c-axis becomes horizontal (1
10) The magnetic layer is grown so that the plane becomes the main plane, and the magnetic layer is oriented in the plane.
【0007】[0007]
【発明が解決しようとする課題】しかし、従来の磁性層
の配向性を高めることによって出力の向上とノイズの低
減を図る方法では、十分なS/N比の改善が得られなか
った。However, the conventional method for improving the output and reducing the noise by increasing the orientation of the magnetic layer has not been able to sufficiently improve the S / N ratio.
【0008】一方、高S/N比を得るために、磁性層の
結晶粒を小さくすることも行われているが、磁性層はC
r系合金からなる中間層の結晶状態を反映してエピタキ
シャル成長するので、上述の配向性を高める方法では磁
性層の結晶粒を十分微細化することが困難であり、必ず
しも十分な高S/N比を得ることができなかった。On the other hand, in order to obtain a high S / N ratio, crystal grains of the magnetic layer have been made small, but the magnetic layer has
Since the epitaxial growth is performed while reflecting the crystal state of the intermediate layer made of the r-based alloy, it is difficult to sufficiently reduce the crystal grains of the magnetic layer by the above-described method of increasing the orientation, and it is not always necessary to obtain a sufficiently high S / N ratio. Could not get.
【0009】したがって、本発明は、磁性結晶粒を十分
微細化且つ均一化し、再現性良く成長させて、S/N比
を高めることを目的とする。SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to increase the S / N ratio by making magnetic crystal grains sufficiently fine and uniform, growing with good reproducibility.
【0010】[0010]
【課題を解決するための手段】図1は本発明の原理的構
成の説明図であり、この図1を参照して本発明における
課題を解決するための手段を説明する。 図1参照 上述の課題を解決するために、本発明においては、Al
系合金基板或いはガラス基板からなる非磁性基板1上に
アモルファス膜2を介してCo層或いはCo合金層のい
ずれかからなるシード層3、特に、島状膜のCo層或い
はCo合金層のいずれかからなるシード層3を設けたこ
とを特徴とする。なお、この場合のCo層或いはCo合
金層のいずれかからなるシード層3の厚さは、連続膜換
算で、2nm以下にすることが望ましい。FIG. 1 is an explanatory view of the principle configuration of the present invention. Referring to FIG. 1, means for solving the problems in the present invention will be described. See FIG. 1. In order to solve the above-mentioned problem, in the present invention, Al
A seed layer 3 made of either a Co layer or a Co alloy layer on a non-magnetic substrate 1 made of a system alloy substrate or a glass substrate with an amorphous film 2 interposed therebetween, in particular, one of a Co layer or a Co alloy layer of an island film And a seed layer 3 comprising: In this case, it is desirable that the thickness of the seed layer 3 made of either a Co layer or a Co alloy layer be 2 nm or less in terms of a continuous film.
【0011】この様に、Co層或いはCo合金層のいず
れかからなる島状のシード層3を設けることによって、
この島状のシード層3を核として結晶成長が行われるの
で、島状のシード層3の分布密度に応じて磁性層5の結
晶粒を微細にすることができ、それによって、ノイズを
低減するとともに出力を大きくしてS/N比を高めるこ
とができる。As described above, by providing the island-shaped seed layer 3 made of either a Co layer or a Co alloy layer,
Since crystal growth is performed using the island-shaped seed layer 3 as a nucleus, crystal grains of the magnetic layer 5 can be made finer according to the distribution density of the island-shaped seed layer 3, thereby reducing noise. At the same time, the output can be increased to increase the S / N ratio.
【0012】この場合、Co層或いはCo合金層のいず
れかからなるシード層3の厚さを、連続膜換算で2nm
以下にすることによって、シード層3の静磁気特性が磁
性層5の静磁気特性に影響を与えることがなく、且つ、
シード層3が磁性層5の配向性に影響を与えることはな
いので、磁性層5の配向性も良好に保つことができる。In this case, the thickness of the seed layer 3 made of either a Co layer or a Co alloy layer is set to 2 nm in terms of a continuous film.
By doing so, the magnetostatic characteristics of the seed layer 3 do not affect the magnetostatic characteristics of the magnetic layer 5, and
Since the seed layer 3 does not affect the orientation of the magnetic layer 5, the orientation of the magnetic layer 5 can also be kept good.
【0013】また、この様な磁気記録媒体を用いて磁気
記録装置を構成することによって、記録密度の向上が可
能になる。Further, by configuring a magnetic recording apparatus using such a magnetic recording medium, the recording density can be improved.
【0014】[0014]
【発明の実施の形態】ここで、図2を参照して、本発明
の第1の実施の形態の磁気記録媒体の製造工程を概念的
に説明する。なお、各図は本発明の第1の実施の形態の
磁気記録媒体の概略的構成図であり、実際には、基板の
両側に対称的に記録層を設けた構造となっている。 図2(a)参照 まず、例えば、3.5インチ(≒8.9cm)のAl95
Mg5 (重量比)からなるAl−Mg合金基板11上
に、厚さが、例えば、10μmのNi81P19からなるア
モルファス状のNiP補強層12をメッキにより設け
て、Al−Mg合金基板11の機械的強度を高めて、高
速回転時の磁気ヘッドとの接触信頼性を確保する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A manufacturing process of a magnetic recording medium according to a first embodiment of the present invention will be conceptually described with reference to FIG. Each drawing is a schematic configuration diagram of the magnetic recording medium according to the first embodiment of the present invention, and has a structure in which recording layers are provided symmetrically on both sides of the substrate. Referring to FIG. 2A, first, for example, 3.5 inches (≒ 8.9 cm) of Al 95
An amorphous NiP reinforcing layer 12 made of Ni 81 P 19 having a thickness of, for example, 10 μm is provided on an Al—Mg alloy substrate 11 made of Mg 5 (weight ratio) by plating. To increase the mechanical strength of the magnetic head to ensure contact reliability with the magnetic head during high-speed rotation.
【0015】次いで、必要に応じて砥粒を用いたテクス
チャ加工を行って、NiP補強層12の表面の円周方向
に沿って微細な溝を形成したり、或いは、凹凸加工を行
って凹凸を形成する。このテクスチャ加工によって形成
された溝或いは凹凸加工によって形成された凹凸によっ
て磁気ヘッドと磁気ディスク記録媒体との間の摩擦を低
減して磁気ヘッドの吸着を防止するとともに、テクスチ
ャ加工によって円周方向に磁化が向きやすくなるので面
内記録方向への磁気異方性を高めることができる。Next, if necessary, texture processing using abrasive grains is performed to form fine grooves along the circumferential direction of the surface of the NiP reinforcing layer 12, or irregularities are formed by performing irregularities processing. Form. The grooves formed by the texture processing or the concavities and convexities formed by the concavo-convex processing reduce the friction between the magnetic head and the magnetic disk recording medium to prevent the magnetic head from being attracted. , The magnetic anisotropy in the in-plane recording direction can be increased.
【0016】図2(b)参照 次いで、複数のチャンバーがゲートバルブによって仕切
られた枚葉式のDC−マグネトロンスパッタ装置を用い
て、例えば、5×10-6Paの真空度において、Coを
連続膜換算で2nm以下スパッタして島状Coシード層
13を形成する。この場合、通常の金属膜の堆積と同様
に、膜厚が極めて薄い状態では、NiP補強層12上に
微小な結晶成長核が分散して発生し、この微小な結晶成
長核を核として結晶成長が進むが、膜厚が2nm以下に
おいては互いに分離した島状膜となる。なお、1nmの
連続膜換算膜厚とは、仮に連続膜として成膜されたと仮
定したときに1nmの層が得られるスパッタ量であり、
ここでは、0.5nm、1nm、1.25nm、2nm
の4種類の膜厚の堆積を行った。Next, referring to FIG. 2 (b), using a single-wafer type DC-magnetron sputtering apparatus in which a plurality of chambers are partitioned by gate valves, Co is continuously supplied at a degree of vacuum of, for example, 5 × 10 −6 Pa. The island-shaped Co seed layer 13 is formed by sputtering a film equivalent to 2 nm or less. In this case, as in the case of ordinary metal film deposition, when the film thickness is extremely small, fine crystal growth nuclei are dispersed and generated on the NiP reinforcing layer 12, and crystal growth is performed using the fine crystal growth nuclei as nuclei. However, when the film thickness is 2 nm or less, island-like films separated from each other are formed. In addition, the continuous film equivalent film thickness of 1 nm is a sputtering amount that can obtain a 1 nm layer when it is assumed that the film is formed as a continuous film.
Here, 0.5 nm, 1 nm, 1.25 nm, 2 nm
The four types of film thickness were deposited.
【0017】図2(c)参照 引き続いて、隣接するチャンバー内へゲートバルブを介
して搬入したのち、厚さが、例えば、10nmのCr90
Mo10からなるCrMo下地層14を堆積させる。この
場合、CrMo下地層14は島状Coシード層13を成
長核としてエピタキシャル成長するので、島状Coシー
ド層13の分布密度に応じた大きさの柱状多結晶とな
る。Subsequently, as shown in FIG. 2 (c), after being carried into the adjacent chamber via a gate valve, the thickness of the Cr 90 layer is, for example, 10 nm.
The CrMo underlayer 14 made of Mo 10 is deposited. In this case, since the CrMo underlayer 14 is epitaxially grown using the island-shaped Co seed layer 13 as a growth nucleus, a columnar polycrystal having a size corresponding to the distribution density of the island-shaped Co seed layer 13 is obtained.
【0018】図2(d)参照 引き続いて、隣接するチャンバー内へゲートバルブを介
して搬入したのち、厚さが、例えば、20nmのCo69
Cr21Pt8 Ta2 からなるCoCrPtTa磁性層1
5をCrMo下地層14上にエピタキシャル成長させ、
次いで、隣接するチャンバー内へゲートバルブを介して
搬入したのち、厚さが、例えば、8nmのDLC(ダイ
アモンドライクカーボン)膜16を堆積させる。以降は
図示を省略するものの、DLC膜16上にフッ素系の潤
滑剤を塗布し、乾燥することによって、磁気記録媒体の
基本構成が完成する。Subsequently, as shown in FIG. 2D, after the wafer is carried into the adjacent chamber through a gate valve, the thickness of the Co 69 is, for example, 20 nm.
CoCrPtTa magnetic layer 1 made of Cr 21 Pt 8 Ta 2
5 is epitaxially grown on the CrMo underlayer 14,
Next, after being carried into an adjacent chamber via a gate valve, a DLC (diamond-like carbon) film 16 having a thickness of, for example, 8 nm is deposited. Thereafter, although not shown, a basic configuration of the magnetic recording medium is completed by applying a fluorine-based lubricant on the DLC film 16 and drying it.
【0019】この様に製造した磁気記録媒体について各
種の測定を行ったので、図3乃至図5を参照して測定結
果を説明する。なお、測定した磁気記録媒体の場合に
は、上述のテクスチャ加工は行っていない。Various measurements were made on the magnetic recording medium manufactured as described above. The measurement results will be described with reference to FIGS. In the case of the measured magnetic recording medium, the above-described texture processing was not performed.
【0020】図3(a)参照 図3(a)は、S/Nm のCo層厚依存性を示す図であ
り、島状Coシード層の層厚増加に伴って、S/Nm も
増加するが、1.25nmから2nmにかけてS/Nm
が急激に悪化する。なお、Nm は媒体ノイズ
(Nmedia )である。FIG. 3A is a graph showing the dependency of S / N m on the Co layer thickness. As the thickness of the island-shaped Co seed layer increases, S / N m also increases. S / N m from 1.25 nm to 2 nm
Rapidly worsens. Incidentally, the N m is the medium noise (N media).
【0021】図3(b)参照 図3(b)は、ノイズNm と出力SのCo層厚依存性を
個別に示す図であり、出力は島状Coシード層の層厚増
加に伴って増加する。一方、ノイズは、島状Coシード
層の層厚増加に伴って減少するものの、1.25nmか
ら2nmにかけて急激に悪化する。[0021] see FIG. 3 (b) Figure 3 (b) is a diagram showing a Co layer thickness dependence of the noise N m and the output S individually output with the thickness increase of the island Co seed layer To increase. On the other hand, although the noise decreases as the thickness of the island-shaped Co seed layer increases, the noise rapidly deteriorates from 1.25 nm to 2 nm.
【0022】これは、島状Coシード層が厚くなって、
Coの静磁気特性が磁性層の静磁気特性に影響を与え始
めたためと考えられ、このノイズの増大が、図3(a)
に示すS/Nm の急激な悪化に影響を与えているものと
考えられる。なお、図におけるノイズは、二乗平均の平
方根で表しており、また、出力は、正弦波状出力波形の
上ピークと下ピークとの間のピーク間の値として示して
いる。This is because the island-shaped Co seed layer becomes thicker,
This is considered to be because the magnetostatic characteristics of Co began to affect the magnetostatic characteristics of the magnetic layer.
It is considered that this has affected the rapid deterioration of S / N m shown in FIG. The noise in the figure is represented by the root mean square, and the output is represented as a value between peaks between the upper peak and the lower peak of the sine wave output waveform.
【0023】図4参照 図4は、M−Hループ特性のCo層厚依存性を示す図で
あり、島状Coシード層の層厚が2nmの場合には、島
状Coシード層の磁気特性が反映されたループとなり、
その他の場合には、島状Coシード層を設けない場合と
ほぼ同様のM−Hループ特性を示すことが理解される。FIG. 4 is a diagram showing the dependency of the MH loop characteristic on the Co layer thickness. When the thickness of the island-shaped Co seed layer is 2 nm, the magnetic characteristics of the island-shaped Co seed layer are shown. Becomes a loop reflecting
In other cases, it is understood that the MH loop characteristics are almost the same as those in the case where the island-shaped Co seed layer is not provided.
【0024】図5参照 図5は、XRD測定における各入射角θにおける強度プ
ロファイルを、島状Coシード層の層厚毎に並べて対比
させたものである。図から明らかなように、磁性層であ
るCoCrPtTa膜の面内配向性を示すCo−hcp
(110)のピークは島状Coシード層の層厚によって
ほとんど変わらないことが理解される。なお、プロファ
イルにおける急峻な大きなピークは全てAlによるピー
クである。FIG. 5 is a graph in which intensity profiles at each incident angle θ in XRD measurement are arranged and compared for each layer thickness of the island-shaped Co seed layer. As is apparent from the figure, Co-hcp showing the in-plane orientation of the CoCrPtTa film as the magnetic layer.
It is understood that the peak of (110) hardly changes with the thickness of the island-shaped Co seed layer. It should be noted that all the steep large peaks in the profile are peaks due to Al.
【0025】以上を総合的に判断すると、 島状Coシード層を設けることによって磁性層の配向
性はほとんど影響を受けないこと、 高S/Nm が得られることから、磁性層が図2(d)
に概念的に示したように微細な結晶粒になっているこ
と、及び、 図3(b)におけるノイズの急増、及び、図4に示す
M−Hループ特性から、島状Coシード層が2nmを越
えると、島状Coシード層の磁気特性の影響が大きくな
り、磁気記録媒体全体の磁気特性が劣化するので、島状
Coシード層の層厚は、連続膜厚換算で2nm以下にす
る必要があること、が理解される。Judging comprehensively from the above, the orientation of the magnetic layer is hardly affected by the provision of the island-shaped Co seed layer, and a high S / N m can be obtained. d)
From the fact that the crystal grains are fine as conceptually shown in FIG. 3, the noise rapidly increases in FIG. 3B, and the MH loop characteristic shown in FIG. 4, the island-shaped Co seed layer has a thickness of 2 nm. When the thickness exceeds 1, the influence of the magnetic properties of the island-shaped Co seed layer increases, and the magnetic properties of the entire magnetic recording medium deteriorate. Therefore, the layer thickness of the island-shaped Co seed layer needs to be 2 nm or less in terms of continuous film thickness. It is understood that there is.
【0026】次に、図6を参照して、ガラス基板を用い
た本発明の第2の実施の形態を説明するが、基本的製造
工程は上記の第1の実施の形態と全く同様であるので、
具体的製造方法の説明は省略する。 図6参照 図6は、本発明の第2の実施の形態の磁気記録媒体の概
略的構成図であり、実際には、基板の両側に対称的に記
録層を設けた構造となっている。まず、例えば、2.5
インチ(≒6.35cm)のガラス基板21上に、スパ
ッタ法によって、厚さが、例えば、0.05μmのCr
密着層22を介して、Ni81P19からなるアモルファス
状のNiP補強層23を順次堆積させる。Next, a second embodiment of the present invention using a glass substrate will be described with reference to FIG. 6, but the basic manufacturing steps are exactly the same as those of the first embodiment. So
The description of the specific manufacturing method is omitted. FIG. 6 is a schematic configuration diagram of a magnetic recording medium according to the second embodiment of the present invention, which has a structure in which recording layers are provided symmetrically on both sides of a substrate. First, for example, 2.5
On a glass substrate 21 of inch (μ6.35 cm), for example, a 0.05 μm thick Cr
An amorphous NiP reinforcing layer 23 made of Ni 81 P 19 is sequentially deposited via the adhesion layer 22.
【0027】以降は、上記の第1の実施の形態と同様
に、NiP補強層23の表面に島状Coシード層24、
CrMo下地層25、CoCrPtTa磁性層26、及
び、DLC膜27を順次堆積させたのち、DLC膜27
上にフッ素系の潤滑剤28を塗布し、乾燥することによ
って、磁気記録媒体の基本構成が完成する。Thereafter, similarly to the first embodiment, the island-like Co seed layer 24,
After sequentially depositing a CrMo underlayer 25, a CoCrPtTa magnetic layer 26, and a DLC film 27, a DLC film 27 is formed.
The basic structure of the magnetic recording medium is completed by applying a fluorine-based lubricant 28 thereon and drying the lubricant.
【0028】この第2の実施の形態においては、基板の
構成が異なるだけで基本的特性は、上記の第1の実施の
形態と同様であり、直径が2.5インチ以下の小型の磁
気記録媒体にとって有用となる。In the second embodiment, the basic characteristics are the same as those of the first embodiment except for the structure of the substrate, and a small magnetic recording device having a diameter of 2.5 inches or less is used. Useful for media.
【0029】次に、図7を参照して、本発明の第2の実
施の形態の磁気記録媒体の変形例を説明する。 図7参照 図7は、本発明の第3の実施の形態の磁気記録媒体の概
略的構成図であり、実際には、基板の両側に対称的に記
録層を設けた構造となっている。図から明らかなよう
に、ガラス基板21上に直接島状Coシード層24を設
けたものであり、それ以外の構成は上記の第2の実施の
形態と同様である。Next, a modification of the magnetic recording medium according to the second embodiment of the present invention will be described with reference to FIG. FIG. 7 is a schematic configuration diagram of a magnetic recording medium according to a third embodiment of the present invention. In practice, the magnetic recording medium has a structure in which recording layers are provided symmetrically on both sides of a substrate. As is clear from the figure, the island-shaped Co seed layer 24 is provided directly on the glass substrate 21, and the other configuration is the same as that of the above-described second embodiment.
【0030】この場合には、ガラス基板21自体がアモ
ルファスであるので、アモルファス膜を提供するNiP
補強層22を必要としないものである。これによって、
製造工程を2つ省略することができるが、基板の強度が
若干低下するとともに、島状Coシード層24及びCr
Mo下地層25とガラス基板21との間の密着性が若干
低下する。In this case, since the glass substrate 21 itself is amorphous, NiP which provides an amorphous film is used.
It does not require the reinforcing layer 22. by this,
Although two manufacturing steps can be omitted, the strength of the substrate slightly decreases, and the island-like Co seed layer 24 and the Cr
The adhesion between the Mo underlayer 25 and the glass substrate 21 is slightly reduced.
【0031】以上、本発明の各実施の形態及びその変形
例を説明してきたが、本発明は上記の各実施の形態及び
その変形例に記載した構成及び条件に限られるものでは
なく、各種の変更が可能である。例えば、シード層をC
oによって形成しているが、Coに限られるものではな
く、Co90Pt10,Co70Cr30等のCo系合金を用い
ても良いものである。The embodiments of the present invention and the modifications thereof have been described above. However, the present invention is not limited to the configurations and conditions described in the above embodiments and the modifications thereof, but may be applied to various embodiments. Changes are possible. For example, if the seed layer is C
Although it is formed by o, it is not limited to Co, and a Co-based alloy such as Co 90 Pt 10 or Co 70 Cr 30 may be used.
【0032】また、上記の各実施の形態においては、基
板としてAl−Mg合金を用いているが、Al−Mg合
金に限られるものではなく、Al−Cu,Al−Si等
の他のAl系合金を用いても良いものである。Further, in each of the above embodiments, the Al-Mg alloy is used as the substrate. However, the present invention is not limited to the Al-Mg alloy, and other Al-based materials such as Al-Cu, Al-Si, etc. An alloy may be used.
【0033】また、上記の各実施の形態においては、下
地層としてCr90Mo10を用いているが、他の組成のC
rMoでも良く、さらには、Cr、CrRu、或いは、
CrWを用いても良いものである。In each of the above embodiments, Cr 90 Mo 10 is used as the underlayer.
rMo may be used, and furthermore, Cr, CrRu, or
CrW may be used.
【0034】また、上記の各実施の形態においては、磁
性層として、Co69Cr21Pt8 Ta2 を用いている
が、他の組成比のCoCrPtTa合金でも良く、ま
た、Co 74Cr15Pt4 Ta4 Nb3 等のCoCrPt
TaNb合金、或いは、Co76.3Cr17Pt6.7 等のC
oCrPt合金を用いても良いものであり、さらには、
Co単体でも良く、いずれにしても、Coまたは、Co
を主成分とし少なくともPtを含むCo合金であれば良
い。これは、Co合金は六方細密構造を有し、且つ、C
o−Pt合金は1軸異方性を有し、適度に高い保磁力を
得ることができるためである。In each of the above embodiments, the magnetic
Co as the active layer69Crtwenty onePt8TaTwoUsing
However, a CoCrPtTa alloy having another composition ratio may be used.
Co 74CrFifteenPtFourTaFourNbThreeCoCrPt
TaNb alloy or Co76.3Cr17Pt6.7Etc. C
oCrPt alloy may be used.
Co alone may be used, and in any case, Co or Co
A Co alloy containing at least Pt and containing at least Pt
No. This is because the Co alloy has a hexagonal close-packed structure and
The o-Pt alloy has uniaxial anisotropy and has a moderately high coercive force.
This is because they can be obtained.
【0035】ここで、再び、図1を参照して、本発明の
詳細な特徴を説明する。 図1参照 (付記1) Al系合金基板上にアモルファス膜2を介
してCo層或いはCo合金層のいずれかからなるシード
層3を設けたことを特徴とする磁気記録媒体。 (付記2) 上記Al系合金が、Al−Mg合金である
ことを特徴とする付記1記載の磁気記録媒体。 (付記3) ガラス基板上に直接、或いは、アモルファ
ス膜2を介してCo層或いはCo合金層のいずれかから
なるシード層3を設けたことを特徴とする磁気記録媒
体。 (付記4) 上記Co層或いはCo合金層のいずれかか
らなるシード層3が、島状膜であることを特徴とする付
記1乃至3のいずれか1に記載の磁気記録媒体。 (付記5) 上記Co層或いはCo合金層のいずれかか
らなるシード層3の膜厚が、連続膜換算で2nm以下で
あることを特徴とする付記4記載の磁気記録媒体。 (付記6) 上記Co層或いはCo合金層のいずれかか
らなるシード層3の上に、Cr系合金層4を介して磁性
層5を設けたことを特徴とする付記1乃至5のいずれか
1に記載の磁気記録媒体。 (付記7) 磁気記録媒体として、付記1乃至6のいず
れか1に記載の磁気記録媒体を用いた磁気記録装置。Here, the detailed features of the present invention will be described with reference to FIG. 1 again. FIG. 1 (Supplementary Note 1) A magnetic recording medium characterized in that a seed layer 3 made of either a Co layer or a Co alloy layer is provided on an Al-based alloy substrate via an amorphous film 2. (Supplementary note 2) The magnetic recording medium according to supplementary note 1, wherein the Al-based alloy is an Al-Mg alloy. (Supplementary Note 3) A magnetic recording medium characterized in that a seed layer 3 made of either a Co layer or a Co alloy layer is provided directly on a glass substrate or via an amorphous film 2. (Supplementary Note 4) The magnetic recording medium according to any one of Supplementary Notes 1 to 3, wherein the seed layer 3 made of either the Co layer or the Co alloy layer is an island film. (Supplementary Note 5) The magnetic recording medium according to Supplementary Note 4, wherein the thickness of the seed layer 3 made of either the Co layer or the Co alloy layer is 2 nm or less in terms of a continuous film. (Supplementary Note 6) The magnetic recording medium according to any one of Supplementary Notes 1 to 5, wherein a magnetic layer 5 is provided via a Cr-based alloy layer 4 on the seed layer 3 made of either the Co layer or the Co alloy layer. 3. The magnetic recording medium according to claim 1. (Supplementary Note 7) A magnetic recording apparatus using the magnetic recording medium according to any one of Supplementary Notes 1 to 6 as a magnetic recording medium.
【0036】[0036]
【発明の効果】本発明によれば、基板上に島状のシード
層を介してCr系合金からなる下地層及び磁性層を順次
設けているので、磁性層の結晶粒を島状のシード層の分
布密度に応じて微細化し、それによって、ノイズを低減
するとともに出力を高めS/Nを大きくすることができ
るので、ハードディスク装置等の磁気ディスク記録装置
の大容量化及び高密度磁気記録化に寄与するところが大
きい。According to the present invention, the underlayer and the magnetic layer made of the Cr-based alloy are sequentially provided on the substrate via the island-like seed layer, so that the crystal grains of the magnetic layer are reduced to the island-like seed layer. , Which can reduce noise, increase output, and increase S / N. Therefore, it is possible to increase the capacity of a magnetic disk recording device such as a hard disk device and achieve high-density magnetic recording. The contribution is great.
【図1】本発明の原理的構成の説明図である。FIG. 1 is an explanatory diagram of a basic configuration of the present invention.
【図2】本発明の第1の実施の形態の磁気記録媒体の製
造工程の説明図である。FIG. 2 is an explanatory diagram of a manufacturing process of the magnetic recording medium according to the first embodiment of the present invention.
【図3】ノイズ特性のCo層厚依存性の説明図である。FIG. 3 is an explanatory diagram of dependency of a noise characteristic on a Co layer thickness.
【図4】M−Hループ特性のCo層厚依存性の説明図で
ある。FIG. 4 is an explanatory diagram of the dependency of the MH loop characteristic on the Co layer thickness.
【図5】XRDスペクトルのCo層厚依存性の説明図で
ある。FIG. 5 is an explanatory diagram of the dependency of the XRD spectrum on the Co layer thickness.
【図6】本発明の第2の実施の形態の磁気記録媒体の概
略的構成図である。FIG. 6 is a schematic configuration diagram of a magnetic recording medium according to a second embodiment of the present invention.
【図7】本発明の第2の実施の形態の磁気記録媒体の変
形例の概略的構成図である。FIG. 7 is a schematic configuration diagram of a modification of the magnetic recording medium according to the second embodiment of the present invention.
1 非磁性基板 2 アモルファス膜 3 シード層 4 Cr系合金層 5 磁性層 11 Al−Mg合金基板 12 NiP補強層 13 島状Coシード層 14 CrMo下地層 15 CoCrPtTa層 16 DLC層 21 ガラス基板 22 Cr密着層 23 NiP補強層 24 島状Coシード層 25 CrMo下地層 26 CoCrPtTa層 27 DLC層 28 潤滑剤 DESCRIPTION OF SYMBOLS 1 Non-magnetic substrate 2 Amorphous film 3 Seed layer 4 Cr-based alloy layer 5 Magnetic layer 11 Al-Mg alloy substrate 12 NiP reinforcing layer 13 Island-shaped Co seed layer 14 CrMo underlayer 15 CoCrPtTa layer 16 DLC layer 21 Glass substrate 22 Cr adhesion Layer 23 NiP reinforcing layer 24 Island-shaped Co seed layer 25 CrMo underlayer 26 CoCrPtTa layer 27 DLC layer 28 Lubricant
Claims (5)
介してCo層或いはCo合金層のいずれかからなるシー
ド層を設けたことを特徴とする磁気記録媒体。1. A magnetic recording medium comprising a seed layer made of either a Co layer or a Co alloy layer provided on an Al-based alloy substrate via an amorphous film.
ァス膜を介してCo層或いはCo合金層のいずれかから
なるシード層を設けたことを特徴とする磁気記録媒体。2. A magnetic recording medium having a seed layer made of either a Co layer or a Co alloy layer provided directly on a glass substrate or via an amorphous film.
からなるシード層が、島状膜であることを特徴とする請
求項1または2に記載の磁気記録媒体。3. The magnetic recording medium according to claim 1, wherein the seed layer made of one of the Co layer and the Co alloy layer is an island film.
からなるシード層の膜厚が、連続膜換算で2nm以下で
あることを特徴とする請求項3記載の磁気記録媒体。4. The magnetic recording medium according to claim 3, wherein the thickness of the seed layer made of either the Co layer or the Co alloy layer is 2 nm or less in terms of a continuous film.
いずれか1項に記載の磁気記録媒体を用いた磁気記録装
置。5. A magnetic recording apparatus using the magnetic recording medium according to claim 1 as a magnetic recording medium.
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|---|---|---|---|
| JP2000272558A JP2002092864A (en) | 2000-09-08 | 2000-09-08 | Magnetic recording medium and magnetic recording device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000272558A JP2002092864A (en) | 2000-09-08 | 2000-09-08 | Magnetic recording medium and magnetic recording device |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007044932A Division JP2007220285A (en) | 2007-02-26 | 2007-02-26 | Magnetic recording medium and magnetic recording apparatus |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007220285A (en) * | 2007-02-26 | 2007-08-30 | Fujitsu Ltd | Magnetic recording medium and magnetic recording apparatus |
| US7776388B2 (en) | 2007-09-05 | 2010-08-17 | Hitachi Global Storage Technologies Netherlands, B.V. | Fabricating magnetic recording media on patterned seed layers |
| WO2012047370A1 (en) * | 2010-09-30 | 2012-04-12 | Seagate Technology, Llc | Preparation of magnetic media |
-
2000
- 2000-09-08 JP JP2000272558A patent/JP2002092864A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007220285A (en) * | 2007-02-26 | 2007-08-30 | Fujitsu Ltd | Magnetic recording medium and magnetic recording apparatus |
| US7776388B2 (en) | 2007-09-05 | 2010-08-17 | Hitachi Global Storage Technologies Netherlands, B.V. | Fabricating magnetic recording media on patterned seed layers |
| WO2012047370A1 (en) * | 2010-09-30 | 2012-04-12 | Seagate Technology, Llc | Preparation of magnetic media |
| US8628867B2 (en) | 2010-09-30 | 2014-01-14 | Seagate Technology Llc | Patterned template with 1xN nucleation site to grain growth for uniform grain size recording media |
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