JP2002090462A - Imaging device, radiation imaging device, and radiation imaging system using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a large-size radiation imaging apparatus, especially an X-ray imaging apparatus which can provide a seamless image by using a plurality of high performance monocrystal silicon image pickup elements. SOLUTION: There are arranged imaging regions where pixels containing optoelectrical transducer parts are arrayed for imaging an object by being divided into a plurality of regions, scanning circuits 501 and 507 which are installed between the plurality of optoelectrical transducer parts within the regions to accomplish a processing of the plurality of pixels in common and/or a processing of signals from the plurality of pixels in common, a protective circuit and an external terminal.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an imaging apparatus, and more particularly, to a radiation imaging apparatus and a radiation imaging apparatus system. More particularly, the present invention relates to a large-area radiation imaging apparatus that reads an image using high-energy radiation such as X-rays and gamma rays, and a system therefor.

[0002]

2. Description of the Related Art Digitalization is progressing in various medical fields. In the field of X-ray diagnosis, two-dimensional imaging devices have been developed for digitizing images. For mammography and chest imaging, large-sized image capturing devices of up to 43 cm have been made.

[Prior Art 1] A large-sized X-ray imaging apparatus is realized by attaching four sensor panels using an amorphous silicon semiconductor on a glass substrate which is likely to be large in size. A technology for increasing the size of an amorphous silicon semiconductor device (a large substrate, a technology for forming elements thereon, etc.) that has already been established for LCDs (Liquid Crystal Displays) is used. An example of this type of technology is described in US Pat. No. 5,315,101. The large area active array matrix described in this is shown in FIG. Referring to FIG.
01 is a substrate, 1902 is a pixel, 1903 is a connection lead,
1904 is a common terminal.

[Prior art 2] A large-sized X-ray imaging apparatus is manufactured using a plurality of single-crystal imaging elements (such as silicon). Examples of this type of technology are described in US Pat. No. 4,323,925 and US Pat. No. 6,0059,911. As a single crystal image sensor, there are a CCD image sensor, a MOS type, a CMOS type image sensor, and the like. The imaging element alone has a performance sufficient for X-ray moving images.

FIG. 21 shows an image sensor described in US Pat. No. 4,323,925. Referring to FIG.
Is a subject, 2002 is a lens, 2003 is an image of the subject,
2004 is a surface, 2005 is a continuous optical sub-image, 20
06 is a tapered FOP (fiber optic plate), 2007 is an image input surface, 2008 is an image sensor module, 2009 is a non-imaging peripheral area, and 2010 is a lead wire. Optical sub-image 2005 is tapered FOP
Reduced by 2006 and incident on the image input surface 2007, a non-imaging peripheral area 2009 can be provided to which leads can be connected.

[0006]

However, the prior art 1 has the following problems.

A maximum of four sheets (2
× 2) Only the sensor panel can be used. This is because an external terminal is provided on the outer peripheral portion and a driving circuit is externally attached.

Further, the scale of a signal processing circuit that can be mounted on an image sensor is limited to such an extent that a pixel selection switch can be provided at most in a pixel. The signal processing circuit (driver, amplifier, etc.) is external.

Further, since amorphous silicon has poor semiconductor characteristics for high-speed operation, it is difficult to produce a large-sized image pickup device for moving images. Further, since the amorphous silicon image sensor has lower sensitivity than the single crystal silicon image sensor, it is difficult to correspond to an X-ray moving image requiring high sensitivity.

The prior art 2 has the following problem.

Since the size of each image pickup element is small (the current technology has a maximum wafer size of 8 inches), a large number of 2.times.2 or more sheets are required.

Further, in the configuration of a simple large-plate image pickup apparatus using a large number of single crystal image pickup elements, a dead space is always created at a joint portion of each image pickup element (peripheral circuits such as a shift register and an amplifier and signals from the outside). In addition, a region for providing an external terminal and a protection circuit for exchanging power and a protection circuit are always required separately from the pixel region), and this portion becomes a line defect, and image quality deteriorates. For this reason, a configuration is used in which light from the scintillator is guided to the image sensor while avoiding a dead space by using a tapered FOP (fiber optic plate), but an extra FOP is required and the manufacturing cost is increased. In particular, tapered FOPs are very costly.

Further, in the tapered FOP, light from the scintillator is less likely to be incident on the FOP according to the taper angle, the output light quantity is reduced, and the sensitivity of the image pickup device is canceled out, thereby lowering the sensitivity of the entire apparatus.

An object of the present invention is to provide a large plate radiation, particularly an X-ray imaging apparatus, capable of providing a seamless image using a plurality of high-performance single-crystal silicon imaging elements.

[0015]

According to the present invention, there is provided an image pickup apparatus which divides a subject image into a plurality of areas and picks up an image. And a scanning circuit provided between the conversion units for processing a plurality of pixels in common and / or processing signals from the plurality of pixels in common.

Further, an image pickup apparatus according to the present invention is characterized in that in the above image pickup apparatus, the scanning circuit includes a vertical scanning circuit.

Furthermore, an imaging apparatus according to the present invention is characterized in that in the above-mentioned imaging apparatus, the scanning circuit includes a horizontal scanning circuit.

Furthermore, an imaging apparatus according to the present invention is characterized in that, in the above-mentioned imaging apparatus, the scanning circuit includes a shift register.

Further, an image pickup apparatus according to the present invention is characterized in that, in the above image pickup apparatus, the shift register is of a static type.

Further, an imaging apparatus according to the present invention is characterized in that in the above-mentioned imaging apparatus, the scanning circuit includes a decoder.

Further, an image pickup apparatus according to the present invention is characterized in that in the above-mentioned image pickup apparatus, the scanning circuit occupies the whole area per one pixel region.

Furthermore, an image pickup apparatus according to the present invention is characterized in that, in the above image pickup apparatus, the scanning circuit is arranged in mutually discrete pixels.

Further, an image pickup apparatus according to the present invention is characterized in that, in the above image pickup apparatus, the scanning circuit occupies a partial area per pixel region.

Further, in the imaging apparatus according to the present invention, in the imaging apparatus described above, the scanning circuit includes a vertical scanning circuit and a horizontal scanning circuit, and the vertical scanning circuit is bent so as not to intersect with the horizontal scanning circuit. It is characterized by having.

Further, in the imaging apparatus according to the present invention, in the above-mentioned imaging apparatus, the scanning circuit includes a vertical scanning circuit and a horizontal scanning circuit, and the horizontal scanning circuit is bent so as not to intersect with the vertical scanning circuit. It is characterized by having.

Furthermore, an imaging apparatus according to the present invention is characterized in that, in the above-mentioned imaging apparatus, the scanning circuit extends in a column direction or a row direction over a plurality of columns or a plurality of rows.

Further, in the image pickup apparatus according to the present invention, in the above-mentioned image pickup apparatus, the scanning circuit is arranged such that blocks for scanning a plurality of rows or a plurality of columns are arranged for each of a plurality of rows or a plurality of columns. And

Further, in the image pickup apparatus according to the present invention, in the above-mentioned image pickup apparatus, it is preferable that the area of the light receiving region is equal between one pixel region where the scanning circuit is provided and one pixel region where the scanning circuit is not provided. Features.

Further, an image pickup apparatus according to the present invention is characterized in that in the above-mentioned image pickup apparatus, a power supply line is arranged on the scanning circuit.

Further, the image pickup apparatus according to the present invention is provided between an image pickup area in which pixels including a photoelectric conversion unit are arranged and which picks up an image by dividing a subject image into a plurality of areas, and a plurality of photoelectric conversion units in the area. And a common processing circuit for selectively transferring a signal from a vertical output line from which signals from a plurality of pixels in the vertical direction are read out to a horizontal output line.

Further, an imaging apparatus according to the present invention is characterized in that in the above-mentioned imaging apparatus, the common processing circuit includes a multiplexer.

Further, in the imaging apparatus according to the present invention, in the above-mentioned imaging apparatus, the common path includes an amplifier for amplifying a signal transferred to the horizontal output line.

Further, an image pickup apparatus according to the present invention is characterized in that in the above-mentioned image pickup apparatus, the common processing circuit occupies the whole area per one pixel region.

Furthermore, an imaging apparatus according to the present invention is characterized in that, in the above-mentioned imaging apparatus, the common processing circuit is arranged in mutually discrete pixels.

Furthermore, an image pickup apparatus according to the present invention is characterized in that in the above-mentioned image pickup apparatus, the common processing circuit occupies a partial area per pixel region.

Further, an image pickup apparatus according to the present invention is characterized in that, in the above-mentioned image pickup apparatus, a power supply line is arranged on the scanning circuit.

Further, the image pickup apparatus according to the present invention is characterized in that an image pickup area in which a plurality of pixels including a photoelectric conversion unit are arranged for picking up an image by dividing a subject image into a plurality of regions, and a plurality of photoelectric conversion units in the region. And an external terminal and / or a protection circuit provided.

Further, an image pickup apparatus according to the present invention is characterized in that in the above image pickup apparatus, the protection circuit includes a protection resistor.

Furthermore, an image pickup apparatus according to the present invention is characterized in that in the above image pickup apparatus, the protection circuit includes a protection diode.

Further, an image pickup apparatus according to the present invention is characterized in that in the above-mentioned image pickup apparatus, the external terminals are provided with bumps.

Further, in the image pickup apparatus according to the present invention, in the above-mentioned image pickup apparatus, the external terminal occupies the whole area per pixel region.

Further, in the imaging device according to the present invention, in the above-mentioned imaging device, the external terminal occupies a partial area per pixel region.

Further, in the image pickup apparatus according to the present invention, in the above-mentioned image pickup apparatus, the protection circuit occupies the whole area per pixel region.

Further, an image pickup apparatus according to the present invention is characterized in that in the above image pickup apparatus, the protection circuit occupies a partial area per pixel region.

Further, an image pickup apparatus according to the present invention is characterized in that, in the above-mentioned image pickup apparatus, the external terminals are arranged in one pixel area.

Further, an imaging device according to the present invention is characterized in that, in the above-mentioned imaging device, the external terminals are arranged in a plurality of pixel regions.

Further, in the image pickup apparatus according to the present invention, in the above-mentioned image pickup apparatus, the external terminal occupies a partial area in each pixel region.

Further, an image pickup device according to the present invention is characterized in that, in the above image pickup device, the external terminal and the protection circuit are arranged in the same pixel region.

Further, an imaging device according to the present invention is characterized in that, in the above-mentioned imaging device, the external terminal and the protection circuit are arranged side by side.

Further, an imaging device according to the present invention is characterized in that, in the above-mentioned imaging device, the external terminal and the protection circuit are arranged so as to overlap.

Further, an image pickup apparatus according to the present invention is characterized in that, in the above image pickup apparatus, the external terminal and the protection circuit are arranged in different pixel regions.

Further, an image pickup apparatus according to the present invention is characterized in that, in the above-mentioned image pickup apparatus, a pixel area where the external terminal is arranged and a pixel area where the protection circuit is arranged are adjacent to each other.

Further, an image pickup apparatus according to the present invention is characterized in that, in the above image pickup apparatus, an image area where the external terminals are arranged and a pixel area where the protection circuit is arranged are separated from each other.

Further, an imaging device according to the present invention is characterized in that in the above-mentioned imaging device, a protection resistor is provided between the external terminal and the protection circuit.

Further, the image pickup apparatus according to the present invention, in the above image pickup apparatus, is an external terminal connected to a wiring interposed between the boundary sides of the first area and the second area, wherein the external terminal is connected to the first area. Any of the external terminals provided is an external terminal connected to another wiring interposed between the boundary sides, and
And any of the external terminals arranged in the region (1) are not located at the same position in the direction along the boundary side.

Further, according to the image pickup apparatus of the present invention, in an image pickup apparatus which divides a subject into a plurality of areas to form one image, the image pickup apparatus is connected to a wiring sandwiched between boundaries between the first area and the second area. Any of the external terminals arranged in the first region is an external terminal connected to another wiring sandwiched between the boundary sides and arranged in the second region. None of the external terminals are located at the same position in the direction along the boundary side.

Further, a radiation imaging apparatus according to the present invention includes the above-described imaging apparatus, a scintillator plate, and a fiber optic plate.

Further, a radiation imaging system according to the present invention comprises the above radiation imaging apparatus, signal processing means for processing a signal from the radiation imaging apparatus, and recording means for recording a signal from the signal processing means. Display means for displaying a signal from the signal processing means, transmission processing means for transmitting a signal from the signal processing means, and a radiation source for generating the radiation. And

[0059]

DESCRIPTION OF THE PREFERRED EMBODIMENTS First, matters common to Embodiments 1 to 15 will be described in detail with reference to FIGS.

FIG. 1 shows an image sensor 101 of 138 mm
4 shows an imaging element portion of a large-area 414 mm square X-ray imaging apparatus formed by laminating in a tile shape.

FIG. 2 shows a cross section taken along the line AA ′ of FIG. Gd ₂ O ₂ using europium, terbium, etc. as an activator
A scintillator plate 201 made of a scintillator such as S or CsI is set on the FOP 202. The X-ray 203 hits the scintillator and is converted into visible light. This visible light is detected by the image sensor 101. The scintillator is preferably selected so that its emission wavelength matches the sensitivity of the image sensor 101. Reference numeral 204 denotes an external processing board that supplies a power supply, a clock, and the like to the image sensor 101 and has a circuit that extracts a signal from the image sensor and processes the signal. 205 is
This is TAB (Tape Automated Bonding) for electrically connecting each image sensor 101 to an external processing substrate.

The nine image pickup devices 101 are bonded so that there is substantially no gap between the image pickup devices. Here, the fact that there is substantially no gap means that an image formed by the nine imaging elements cannot have a gap between the imaging elements. Input of a clock or the like of the image sensor 101, power supply,
The output of the signal from the pixel is performed through the TAB 205 connected to the electrode pad provided at the end of the image sensor and between the pixel and the external processing substrate 204 disposed on the back side of the image sensor 101. TA
The thickness of B205 is sufficiently small with respect to the pixel size, and no defect on the image occurs even if it passes through the gap between the imaging elements 101.

FIG. 3 shows a case in which one image pickup element is taken out from the currently mainstream 8-inch wafer 301. The 8-inch wafer 301 is an N-type wafer.
1 is made by taking one sheet.

FIG. 4 shows a configuration diagram of a pixel portion forming each pixel of the CMOS type image pickup device 101. Reference numeral 401 denotes a photodiode (photoelectric conversion unit) that performs photoelectric conversion, 402 denotes a floating diffusion that accumulates electric charges, 403 denotes a transfer MOS transistor (transfer switch) that transfers electric charges generated by the photodiode to the floating diffusion, and 404 denotes a floating diffusion. A reset MOS transistor (reset switch) 405 for discharging the accumulated charge, a row selection MOS transistor 405 (row selection switch) for selecting a row,
Reference numeral 06 denotes an amplification MOS transistor (pixel amplifier) functioning as a source follower.

FIG. 5 is a schematic diagram of an entire circuit of 3 × 3 pixels.

The gate of the transfer switch 403 has a φTX from a vertical shift register 501 which is a kind of vertical scanning circuit.
502, the gate of the reset switch 404 is connected to φRES 503 from the vertical scanning circuit 501,
The gate of the row selection switch 405 is connected to φSEL 504 from the vertical scanning circuit 501.

The photoelectric conversion is performed by the photodiode 401, and during the accumulation period of the light quantity charge, the transfer switch 403 is used.
Is off, and the charge photoelectrically converted by this photodiode is not transferred to the gate of the source follower 406 that constitutes the pixel amplifier. The reset switch 404 of the gate of the source follower 406 constituting the pixel amplifier is turned on before the start of accumulation, and is initialized to an appropriate voltage. That is, this is the dark level. Next or at the same time when the row selection switch 405 is turned on, the source follower circuit including the load current source and the pixel amplifier 406 enters an operation state. Here, when the transfer switch 403 is turned on, the signal is accumulated in the photodiode. Charge
The signal is transferred to the gate of the source follower 406 constituting the pixel amplifier.

Here, the output of the selected row is generated on the vertical output line (signal output line) 505. This output is sequentially read out to an output unit amplifier 508 via a horizontal output line by driving a column selection switch (multiplexer) 506 by a horizontal shift register 507 which is a type of horizontal scanning circuit.

FIG. 6 shows one unit block (unit for selecting and driving one row) 601 of the vertical shift register 501.
A state in which a pixel circuit (a cell) 603 is arranged together with a pixel circuit 602 is shown. The one-pixel circuit 602 is as shown in FIG. The vertical shift register includes a static shift register 604 and a transfer gate 60 for generating a transfer signal φTX, a reset signal φRES, and a row selection signal φSEL.
5 shows a simple circuit composed of FIG. These are driven by signals from a clock signal line (not shown). The circuit configuration of the shift register is not limited to this, and an arbitrary circuit configuration can be adopted depending on various driving methods such as pixel addition and thinning-out reading. However, as in the present embodiment, the functional block is arranged together with the pixel circuit 602 in one cell 603, and a shift register is provided in the effective pixel area.
An image sensor in the entire effective pixel area is realized.

In Embodiments 1 to 7 described below,
Vertical scanning circuit such as a vertical shift register and n pairs 2 ⁿ decoders, characterized in that arranged in the horizontal shift register and n pairs in 2 ⁿ each pixel region of the horizontal scanning circuit effective pixel region such as the decoder (cell) .

Similarly, it is characterized in that the common processing circuit is arranged in each pixel area (cell) in the effective pixel area. Here, the common processing circuit means a circuit that collectively processes a plurality of pixels collectively, such as a final signal output amplifier, a serial / parallel conversion multiplexer, a buffer, and various gate circuits.

On the other hand, the individual circuit means a circuit that processes only one pixel, such as a photodiode, a transfer switch, a pixel selection switch, and a pixel output amplifier circuit.

(Embodiment 1) FIG. 7 shows a configuration (plan view) of an image sensor according to the present embodiment.

In this embodiment, the vertical shift register 501 is used.
B and the horizontal shift register 507B are arranged in the effective pixel area of the image sensor.

One block 601 of a shift register for processing one line is arranged so as to fit within one pixel pitch. These blocks are arranged to form a series of vertical shift register blocks 501B and a horizontal shift register block 507B. These blocks extend linearly in the vertical and horizontal directions.

The area of the light receiving portion of a certain pixel in these shift register blocks 601 is slightly smaller than the other pixels.

A static shift register is used as the shift register. Various circuit configurations of the shift register can be applied in design. In this embodiment, a general circuit example has been described. The important thing is to use the static type.

According to the present embodiment, since no dead space is generated around the image sensor, the entire surface of the image sensor becomes an effective pixel area.

By arranging these image pickup devices in a tile shape with substantially no gap, a large-sized image pickup device can be formed. An image of a substantially seamless large plate can be obtained.

In a medical X-ray imaging apparatus, the size of a pixel may be as large as about 100 μm □ to 200 μm □, so that a sufficiently large aperture ratio can be realized even if a static shift register having a large number of constituent elements is arranged. it can.

In this embodiment, since the shift register is arranged in the effective pixel area, X-rays passing through the scintillator plate directly hit the shift register. X-rays are a problem because they cause damage to the element and cause errors.

An example of an error is a phenomenon in which electric charges are accumulated at the interface between the insulating oxide film SiO ₂ and silicon, causing a change in threshold value and an increase in leak current. Also,
An example of the damage is a defect occurring on the pn junction surface, and this defect causes an increase in leak current.

Another example of an error is the MO
This is similar to an error (soft error) due to the action of hot electrons known as a malfunction in an S-type dynamic RAM.

Hot electrons generated by an electric field are likely to occur in a short channel structure where the electric field is high. However, since hot electrons generated by an X-ray are generated regardless of the size, the X-rays are irradiated regardless of the planar size. And the imaging device is likely to be unstable.

Next, a shift register used to drive the pixels of the image sensor will be described. The shift register circuit is used for sequentially transferring pulse signals.

FIGS. 8 and 9 show examples of the configuration of the static shift register circuit. This shift register circuit
This is disclosed in JP-A-9-223948. One stage of the shift register circuit corresponds to one stage in the configuration of FIG.
In the configuration of FIG. 9, it is composed of three inverters and two CMOS transfer gates. Here, clock signals CLK and / CLK (“/” indicates negative logic) having opposite phases are input to the two clocked inverters or the two CMOS transfer gates, respectively. Further, clock signals having opposite phases are input to the adjacent shift register circuits.

FIG. 10 shows an internal configuration diagram of the inverter.

FIG. 11 is a diagram showing the internal configuration of a clocked inverter, in which a p-channel input transistor Tr1, a p-channel clocked transistor Tr2, an n-channel clocked transistor Tr3,
An n-channel input transistor Tr4 is connected in series, and an output is taken out from a connection point between the transistor Tr2 and the transistor Tr3.

As described above, the shift register circuit used in the drive circuit is normally driven in synchronization with the clock by two clock signals having opposite phases.

FIG. 12 shows a configuration example of a dynamic shift register circuit. As shown in FIG. 12, a clocked inverter for feedback (or a transfer gate and an inverter) is provided in the static type, whereas a transistor TR and a capacitor C to which a clock is applied to the gate are provided between the inverters in the dynamic type. This reduces the number of elements and lowers power consumption. This shift circuit is disclosed in Japanese Patent Application Laid-Open No. Hei 5-218814. In principle, the dynamic type performs an operation of storing data by storing charge in a capacitor.

In the dynamic type, if there is a leak at the pn junction surface or at the interface between the insulating layer and silicon, the charge cannot be held in the capacitor, and the normal operation cannot be performed. If a dynamic type is used where X-rays are radiated, it will be easily damaged by X-rays, an increase in leak current will occur, and operation will not be performed, causing a problem in reliability. In addition, a normal image cannot be obtained due to a malfunction caused by hot electrons generated by X-rays.

On the other hand, in principle, the static type is X
It is relatively insensitive to radiation and can be used where X-rays are directly applied as in this embodiment. Therefore, if a static shift register is used, an imaging device with reduced X-ray damage and errors and improved reliability can be realized.

Further, instead of the shift register, an n-to- ²ⁿ decoder can be used as the scanning circuit. By connecting the output of the counter that sequentially increments to the input of the decoder, sequential scanning can be performed in the same manner as the shift register. On the other hand, random scanning can be performed by inputting the address of the area where an image is desired to be input to the input of the decoder. Can obtain an image of an arbitrary region.

This embodiment uses a CMOS as an image sensor.
Since the sensor is used, the power consumption is low, which is suitable for forming a large-sized imaging device.

The reason why the multiplexer is formed in the image sensor is to speed up the operation of the image sensor.

A signal is taken out from the image pickup device to the outside via the electrode pad, and there is a large stray capacitance around the electrode pad. Therefore, by providing the amplifier 508 at a stage preceding the electrode pad, signal transmission characteristics can be compensated.

[Embodiment 2] The imaging apparatus of Embodiment 2
Although the basic configuration is the same as that of the first embodiment, the arrangement of the shift registers is different from that of the first embodiment.

In the second embodiment, as shown in FIG. 13, the block of the vertical shift register 501C whose driving frequency is lower than that of the horizontal shift register 507C is bent into an L-shape before it crosses the horizontal shift register 507C. To place. If the operating frequency is ignored, the block of the horizontal shift register 507C is
Before intersecting with 01C, it may be bent and arranged in an L shape.

When the vertical shift register 501B and the horizontal shift register 507B are arranged in the effective pixel area as in the first embodiment, the intersection always appears. At this time, the cell at the intersection is occupied by the circuits of the vertical shift register 501B and the horizontal shift register 507B, which may cause a pixel defect or a process defect in this portion where transistors are densely concentrated. In order to avoid this, as in the second embodiment, one of the shift registers is arranged in an L-shape before one of the shift registers intersects with the other of the shift registers, so that the crossing of the wirings is avoided more than necessary, and the layout is changed. Can be simplified.

In general, when noise is added to the transmission path,
The waveform of the clock signal is disturbed, and an equivalently high-speed clock signal is input to the receiving circuit. When a clock signal having a pulse width shorter than the normal operation range of the circuit is input, the state transition circuit transitions to an abnormal state, resulting in malfunction.

In the case of an image pickup device having a scanning circuit (shift register) of the XY address system, if the clock signal and the data signal cause an abnormality such as stoppage for some reason, the scanning circuit stops or malfunctions.

Since a shift register driven at high speed is apt to generate noise, especially when the blocks of the shift register are arranged in an L-shape as in the second embodiment, the vertical shift register having a low driving frequency is arranged in an L-shape. By doing, L
The configuration is such that it is less susceptible to noise caused by irregularly bending the wiring in a character shape.

Further, if the stray capacitance associated with the shift register becomes large, the response becomes slow and an operation failure is likely to occur. In particular, when a structure in which the shift register is bent as in the second embodiment is used, wiring (a ′ ′ and bb ′ in the drawing) that does not need to have a linear layout is necessary.
The stray capacitance in this part may have an adverse effect. Therefore, in the second embodiment, the vertical shift register having a small driving frequency is arranged in an L-shape so as to be less affected by the response delay due to the stray capacitance.

[Embodiment 3] The imaging apparatus of Embodiment 3
Although the basic configuration is the same as that of the first embodiment, the arrangement of the shift registers is different from that of the first embodiment.

In the third embodiment, as shown in FIG. 14, adjacent one-line drive blocks of the shift register are prevented from being continuously arranged on the same straight line. The vertical shift register 501D stores each block in an appropriate Y so that all blocks do not lie on a straight line in the vertical direction.
Place on line. The horizontal shift register 507D also
Place in the same way.

A certain pixel of the shift register block has a light receiving area smaller than other pixels. If such pixels are arranged on a straight line, an unnatural feeling may appear on the image. Embodiment 3
According to the above, by dispersing such pixels appropriately, it is possible to reduce the sense of discomfort of the image.

[Embodiment 4] The imaging apparatus of Embodiment 4
Although the basic configuration is the same as that of the first embodiment, the arrangement of the shift registers is different from that of the first embodiment.

In the fourth embodiment, as shown in FIG. 15, a circuit for scanning three rows of the shift register is defined as one block, and the blocks are arranged every three lines to form a vertical shift register 501E. Horizontal shift register 5
07 is similarly configured. In the cell with this block,
A block does not occupy the entire cell, and a cell including the block also has one pixel circuit 602. As long as this condition is satisfied, the fourth embodiment generally includes a circuit in which a circuit for scanning a plurality of rows of a shift register is defined as one block, and the blocks are arranged for each number to constitute a vertical register. .

A pixel in a shift register block has a light receiving area smaller than other pixels. If such pixels are arranged on a straight line, an unnatural feeling may appear on the image. Embodiment 4
In this case, the shift registers are put together into one block for every three lines, and by disposing such a block, the sense of discomfort of the image can be reduced.

[Embodiment 5] An imaging apparatus according to Embodiment 4 comprises:
Although the basic configuration is the same as that of the first embodiment, the arrangement of the shift registers is different from that of the first embodiment.

In the fifth embodiment, as shown in FIG. 16, a circuit for scanning n rows (n is a natural number) of a shift register is defined as one block, and this block is arranged for every n lines to form a vertical shift register 501E. Is configured. The horizontal shift register 507 has the same configuration. In a cell having this block, the block occupies the whole cell, and there is no one-pixel circuit 602 in a cell having the block.

A pixel in a shift register block has a light receiving area smaller than other pixels. If such pixels are arranged on a straight line, an unnatural feeling may appear on the image. Embodiment 4
In this case, the shift registers are put together into one block for every three lines, and by disposing such a block, the sense of discomfort of the image can be reduced.

[Embodiment 6] In Embodiment 6, as shown in FIG. 17, the areas and pitches of the light receiving regions of at least a plurality of pixels are made equal. In FIG. 17, the same area between cells is equal to the area of one pixel circuit.
The area of the light receiving region (not shown in FIG. 17) in the pixel circuit is equal between the cells. Further, it is preferable that the area of the light receiving region is equal between all the cells. However, the area of the light receiving region in one cell at one end of the image sensor is set to be equal to the internal cell in order to take a margin for slicing. It may be different from the area of the light receiving area in the inside.

FIG. 18 shows a layout of one pixel region (cell) in which a shift register is arranged. 1801 is a light receiving area, 1802 is a shift register block, and 1803 is an area such as a switch and a pixel amplifier.

In FIG. 18, the cell size is 150 μm square, one shift register block is 20 μm × 150 μm, the light receiving area of the pixel is 130 μm square, and the area of the switch and the pixel amplifier is 130 μm × 20 μm, so that the aperture ratio is 75%.

The layout of the one pixel area where no shift register is provided is the same as that shown in FIG. 18 except that shift register block 1802 is omitted. At least the light receiving area of the one pixel area where no shift register is provided is shifted. This is the same as the light receiving area 1801 of one pixel area (cell) where the register is arranged.

If the function of the shift register block 1802 is simplified, the cell occupancy can be reduced to the extent shown in FIG. If the number of functions is increased, the width of the shift register block 1802 is increased,
As long as the restriction on the aperture ratio is not removed, it falls outside the range of the sixth embodiment.

According to the sixth embodiment, even if a shift register or the like is arranged in an effective pixel area by using a large pixel and a shift resist having an appropriate size and making the light receiving area uniform between pixels, the sensitivity can be improved. There is no variation or variation in the center of gravity of the pixel.

That is, the sensitivities of the plurality of light receiving areas are equal,
Further, since the pitches are equal, a high quality image can be obtained.

[Embodiment 7] The embodiment 7 is similar to the embodiment 1
In Nos. 6 to 6, the power supply line is disposed on the shift register and / or the common processing circuit for X-ray shielding. As a material of the power supply line, copper or the like having a high X-ray absorption rate is used.

As described above, according to the first to seventh embodiments, the scanning circuit and the common processing circuit are arranged between the pixels in the effective pixel region, with the entire surface of the image sensor as the effective pixel region. Therefore, the image sensors can be arranged so that a substantial gap does not occur between the image sensors. Therefore, the entire circumference of a certain image sensor is surrounded by another image sensor, and five (in the case of a cross-shaped region)
Alternatively, even if an imaging device that forms one image with nine or more (in the case of three / row × 3 / column rectangular area) or more imaging devices is formed, discontinuity or omission of images between the imaging devices may occur. Does not occur.

Further, since the imaging device having the above configuration can be formed, it is possible to use not only an amorphous silicon imaging device but also a single crystal silicon imaging device which is difficult to increase in size. It is possible to capture a high-definition moving image.

Further, since it is not necessary to use the tapered FOP, the cost of the imaging device can be reduced.

[Embodiment 8] FIG. 19 shows a configuration (a plan view) of an image sensor according to this embodiment.

In this embodiment, the vertical shift register 501 is used.
B and the horizontal shift register 507B are arranged in the effective pixel area of the image sensor.

One block 601 of a shift register for processing one line is arranged so as to fit within one pixel pitch. These blocks are arranged to form a series of vertical shift register blocks 501B and a horizontal shift register block 507B. These blocks extend linearly in the vertical and horizontal directions.

The area of the light receiving portion of a certain pixel in these shift register blocks 601 is slightly smaller than the other pixels.

Further, in the present embodiment, one of the end portions of the image sensor is provided.
An external terminal 701A and a protection circuit 702B are arranged in a pixel region. A bump 703A is provided on the external terminal 701A,
To this, a TAB 205 is connected as shown in FIG. 8 to make an electrical connection with an external processing substrate 204 disposed on the back surface of the tiled image sensor.

In this embodiment, one pixel circuit 602 is not provided in one pixel region (cell) in which the external terminal 701 is provided, but one pixel circuit 602 is provided in one pixel region in which the protection circuit 702 is provided. You.

According to the present embodiment, since the external terminal 701 and the protection circuit 702 are provided in the image area, the area for the external terminal 701 and the protection circuit 702 is provided on each image sensor separately from the pixel area. No need to provide. Therefore, since the dead space is substantially eliminated, it is possible to realize an image sensor in the entire effective pixel area. Therefore, a plurality of single crystal imaging elements can be tiled substantially seamlessly.

The protection circuit 702A is connected to the one-pixel circuit 60.
2 and so on by the same CMOS process.
The protection circuit 702A can be formed at an arbitrary position.

Now, the protection circuit will be described.

A protection resistor 81 (for example, made of polysilicon) having an equivalent circuit shown in FIG. 21 is provided between the external terminal and the internal circuit of the CMOS type image sensor to protect the internal circuit from electrostatic damage. And protection PN junction diode 8
A protection circuit comprising 2, 83 is provided. When a high voltage is applied to the external terminal, the voltage reaches protection diodes 82 and 83 through protection resistor 81 and aluminum wiring, and one of protection diodes 82 and 83 is turned on, so that power supply potential Vcc or ground potential Discharged to Vss. Thereby, a high voltage is not applied to the internal circuit. Here, the protection resistor 81 has a role of limiting the current accompanying the discharge and attenuating the high voltage to some extent before the high voltage reaches the protection diodes 82 and 83.

FIG. 22 shows a general configuration example of the protection circuit 702A. An N-type semiconductor substrate 901 has a P ⁺ high-concentration diffused resistor 902 formed on the surface of the substrate 901, one end of which is connected to the input electrode 907 and the other end of which is connected to the output electrode 908. A power-side PN junction diode is formed between the P ⁺ high-concentration diffused resistor 902 and the N-type semiconductor substrate 901. A P-well diffusion region 903 is formed in another portion of the N-type semiconductor substrate 901, and an N ⁺ diffusion region 904 connected to the output electrode 908 is formed near the surface thereof.
Are formed. The N ⁺ diffusion region 904 and the P well diffusion region 903 form a ground-side PN junction diode. 905 is a P-well diffusion region 90
Reference numeral 3 denotes a P ⁺ diffusion region for grounding, 906 denotes a field oxide film, 909 denotes a ground electrode, and 910 denotes a power electrode.

The external terminal 701A, the protection circuit 702A, and the bump 703A shown in the eighth embodiment are for a power supply. However, in an actual image pickup device, in addition to the above, input signals such as a clock signal supplied to a shift register are provided. Things for,
There are those for output signals such as read signals from each pixel.

[Ninth Embodiment] An imaging apparatus according to a ninth embodiment includes:
Although the basic configuration is the same as that of the eighth embodiment, the arrangement of the external terminals and the protection circuits is different from that of the eighth embodiment.

In the ninth embodiment, as shown in FIG.
External terminal 701 with bump 703B mounted on pixel area
B, a protection circuit 702B is arranged. Note that the pixel pitch is 160 μm.

According to the ninth embodiment, the number of one-pixel regions where one-pixel circuits 602 are not formed can be minimized.

[Embodiment 10] The image pickup apparatus of Embodiment 10 has the same basic configuration as Embodiment 8, but has external terminals and
The arrangement of the protection circuit is different from that of the eighth embodiment.

In the tenth embodiment, as shown in FIG.
An external terminal 701C on which a bump 703C is mounted is provided in a part of one pixel area, and a protection circuit 702C is provided in a part of another one pixel area. Note that the pixel pitch is 160 μm.

According to the tenth embodiment, the external terminal 701C
The one-pixel circuit 602 can be formed in the one-pixel region on which is mounted and the one-pixel region on which the protection circuit 702C is mounted, and no pixel defect occurs.

[Embodiment 11] The image pickup apparatus of Embodiment 11 has the same basic configuration as Embodiment 8, except that an external terminal,
The arrangement of the protection circuit is different from that of the eighth embodiment.

In the eleventh embodiment, as shown in FIG.
External terminal 701 having bump 703D mounted on one pixel area
D, protection diodes 82D and 83D, and a protection resistor 81D. Note that the pixel pitch is 100 μm.

According to the eleventh embodiment, even if the pixel pitch becomes narrow, the number of one pixel regions where one pixel circuit 602 is not formed can be minimized.

[Embodiment 12] The image pickup apparatus of Embodiment 12 has the same basic configuration as Embodiment 8, except that an external terminal
The arrangement of the protection circuit is different from that of the eighth embodiment.

In the twelfth embodiment, as shown in FIG.
One external terminal 701E on which the bump 703E is mounted is arranged in the four pixel regions. The external terminal 701E occupies only a part of the area in each pixel region. Further, a protection circuit 702E is provided in a part of one pixel region.

According to the twelfth embodiment, even if the pixel pitch becomes narrow, the number of one pixel regions where one pixel circuit 602 is not formed can be minimized.

According to the twelfth embodiment, even if the pixel pitch becomes narrow, one pixel circuit 602 is formed in one pixel region on which the external terminal 701E is mounted and one pixel region on which the protection circuit 702E is mounted. And no pixel defects occur.

Further, by arranging bumps larger than one pixel, electrical mounting was facilitated.

[Thirteenth Embodiment] The imaging apparatus of the thirteenth embodiment has the same basic configuration as that of the eighth embodiment.
The arrangement of the protection circuit is different from that of the eighth embodiment.

In the thirteenth embodiment, as shown in FIG.
External terminal 701 having bump 703E mounted on one pixel area
F, and the protection circuit 702F is arranged in one pixel region adjacent to the one pixel region in which the external terminal 701F is arranged.

According to the thirteenth embodiment, since one pixel is entirely used for bumps, electrical mounting becomes easy.

[Embodiment 14] The image pickup apparatus of Embodiment 14 has the same basic configuration as Embodiment 8, but has external terminals,
The arrangement of the protection circuit is different from that of the eighth embodiment.

In the fourteenth embodiment, as shown in FIG.
External terminal 701 having bump 703G mounted on one pixel area
G, and the protection circuit 702G is arranged in one pixel region separated from the one pixel region in which the external terminal 701G is arranged.

Further, the protection circuit 702G may be replaced with a protection diode, and the wiring 1501 may be used as a protection resistor. By doing so, the resistance value of the protection resistor can be increased.

According to the fourteenth embodiment, since the defective pixels are separated from each other, the quality of the image is improved.

[Embodiment 15] Embodiment 15 is applicable to Embodiments 8 to 14.

In the fifteenth embodiment, as shown in FIG.
When the image sensor 101A and the image sensor 101B are arranged adjacent to each other, an external terminal 701H on which the bump 703H is mounted and an external terminal 701 on which the bump 703J is mounted
J is shifted so as not to face each other. Alternatively, the external terminal 701H on which the bump 703H is mounted and the bump 703
The external terminal 701J on which J is placed is not located at the same position in the direction along the adjacent side. In FIG. 17, the external terminals 701H and 701J are arranged on the outer peripheral portions of the imaging elements 101A and 101B. However, the present embodiment is not limited to this, and the external terminals 701H and 701J are connected to the external terminals 701H. As long as the condition that the external terminal 701J is not at the same position in the direction along the adjacent side is satisfied, the imaging device 101
A and 101B may be arranged inside the outer periphery.

By doing so, the image pickup device 101 can be mounted without interference between the TAB 205H connected to the bump 703H and the TAB 205J connected to the bump 703J.
The gap between A and the image sensor 101B can be narrowed, and image defects between the image sensors can be eliminated.

As described above, Embodiments 8 to 15
According to the method, an external terminal and a protection circuit are provided between pixels in the effective pixel region, with the entire surface of the image sensor as an effective pixel region. Therefore, the image sensors can be arranged so that a substantial gap does not occur between the image sensors, so that the entire circumference of a certain image sensor is surrounded by another image sensor, and five (in the case of a cross-shaped region) or nine pixels (In the case of a rectangular area of 3 pieces / row × 3 pieces / column) Even if an image pickup apparatus that forms one image with the above image pickup elements is formed, discontinuity or omission of an image does not occur between the image pickup elements.

Further, since the imaging device having the above configuration can be formed, it is possible to use not only an amorphous silicon imaging device but also a single crystal silicon imaging device which is difficult to increase in size. It is possible to capture a high-definition moving image.

Further, since it is not necessary to use the tapered FOP, the cost of the imaging device can be reduced.

[Sixteenth Embodiment] FIG. 30 shows an application example of the imaging apparatus according to the first to fifteenth embodiments to an X-ray diagnostic system of a radiation imaging apparatus.

The X-ray 60 generated by the X-ray tube 6050
Numeral 60 denotes a light passing through the chest 6062 of the patient or the subject 6061, the scintillator 201, the FOP 202, and the imaging device 1.
01, radiation imaging apparatus 60 including external processing substrate 204
It is incident on 40. The incident X-ray includes information on the inside of the body of the patient 6061. The scintillator emits light in response to the incidence of X-rays, and this is photoelectrically converted by the imaging device.
Obtain electrical information. This information is converted into digital data, image-processed by an image processor 6070, and can be observed on a display 6080 in the control room.

This information can be transferred to a remote place by a transmission means such as a telephone line 6090, and can be displayed on a display 6081 such as a doctor room at another place or stored in a storage means such as an optical disk. It is also possible to make a diagnosis. Also film processor 6
100 can also be recorded on the film 6110.

[0166]

According to the present invention, it is possible to obtain a high-quality image in which unnaturalness between image pickup areas does not occur.

[Brief description of the drawings]

FIG. 1 is a plan view showing an arrangement of imaging elements and an arrangement of scanning circuits in an imaging device according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view showing a configuration of the imaging device according to the embodiment of the present invention, and shows a cross section taken along line AA ′ of FIG.

FIG. 3 is a plan view showing an image sensor according to an embodiment of the present invention and a wafer on which the image sensor is based.

FIG. 4 is a circuit diagram of one pixel circuit in the image sensor according to the embodiment of the present invention.

FIG. 5 is a circuit diagram of an image sensor according to an embodiment of the present invention.

FIG. 6 shows one pixel region (cell) according to the first embodiment of the present invention.
3 is a conceptual plan view showing the configuration of FIG.

FIG. 7 is a plan view showing a layout of an image sensor according to Embodiment 1 of the present invention.

FIG. 8 is a circuit diagram showing a first example of a static shift register.

FIG. 9 is a circuit diagram showing a second example of the static shift register.

FIG. 10 is a circuit diagram illustrating an example of an inverter used for a shift register.

FIG. 11 is a circuit diagram showing an example of a clocked inverter used for a static shift register.

FIG. 12 is a circuit diagram illustrating an example of a dynamic shift register.

FIG. 13 is a plan view showing a layout of an image sensor according to Embodiment 2 of the present invention.

FIG. 14 is a plan view showing a layout of an image sensor according to Embodiment 3 of the present invention.

FIG. 15 is a plan view showing a layout of an image sensor according to Embodiment 4 of the present invention.

FIG. 16 is a plan view showing a layout of an image sensor according to Embodiment 5 of the present invention.

FIG. 17 is a plan view showing a layout of an image sensor according to Embodiment 6 of the present invention.

FIG. 18 is a plan view showing a layout of one pixel region of an image sensor according to Embodiment 6 of the present invention.

FIG. 19 is a plan view showing a layout of an image sensor according to Embodiment 8 of the present invention.

FIG. 20 is a cross-sectional view showing a state in which TAB is connected to an external terminal and passes between image pickup devices according to Embodiment 8 of the present invention.

FIG. 21 is an equivalent circuit diagram illustrating an example of a protection circuit.

FIG. 22 is a cross-sectional view illustrating a configuration of a protection circuit.

FIG. 23 is a plan view showing a layout of an image sensor according to Embodiment 9 of the present invention.

FIG. 24 is a plan view showing a layout of an image sensor according to Embodiment 10 of the present invention.

FIG. 25 is a plan view showing a layout of an image sensor according to Embodiment 11 of the present invention.

FIG. 26 is a plan view showing a layout of an image sensor according to Embodiment 12 of the present invention.

FIG. 27 is a plan view showing a layout of an image sensor according to Embodiment 13 of the present invention.

FIG. 28 is a plan view showing a layout of an image sensor according to Embodiment 14 of the present invention.

FIG. 29 is a plan view showing a layout of an image sensor according to Embodiment 15 of the present invention.

FIG. 30 is a conceptual diagram showing a configuration of a radiation imaging system according to Embodiment 16 of the present invention.

FIG. 31 is an explanatory diagram of Conventional Technique 1.

FIG. 32 is an explanatory diagram of Conventional Technique 2.

[Explanation of symbols]

 Reference Signs List 101 Image sensor 201 Scintillator plate 202 FOP (fiber optic plate) 203 X-ray 204 External processing board 205 TAB 501 Vertical shift register 506 Column selection switch (multiplexer) 507 Horizontal shift register 508 Output amplifier

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Noriyuki Kaibe 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (72) Inventor Tetsunobu Mitsuji 3-30-2 Shimomaruko, Ota-ku, Tokyo F term in Canon Inc. (reference) 2G088 EE01 FF02 FF04 GG15 GG19 JJ05 JJ33 4M118 AA04 AA05 AA10 AB01 AB10 BA14 CA02 CB11 FA06 FA34 FA42 FB16 GA10 HA03 HA21 HA23 HA24 HA31

Claims (44)

[Claims] 1. An imaging area in which pixels including a photoelectric conversion unit are arranged for imaging a subject image by dividing the image into a plurality of areas, and a plurality of pixels provided between the plurality of photoelectric conversion units in the area. And / or a scanning circuit for commonly processing signals from the plurality of pixels. 2. The imaging device according to claim 1, wherein the scanning circuit includes a vertical scanning circuit. 3. The imaging device according to claim 1, wherein the scanning circuit includes a horizontal scanning circuit. 4. The imaging device according to claim 1, wherein the scanning circuit includes a shift register. 5. The imaging device according to claim 4, wherein the shift register is of a static type. 6. The imaging device according to claim 1, wherein the scanning circuit includes a decoder. 7. The imaging device according to claim 1, wherein the scanning circuit occupies the whole area of one pixel region. 8. The imaging device according to claim 7, wherein the scanning circuit is arranged in mutually discrete pixels. 9. The imaging device according to claim 1, wherein the scanning circuit occupies a partial area per pixel region. 10. The imaging device according to claim 1, wherein
The imaging apparatus according to claim 1, wherein the scanning circuit includes a vertical scanning circuit and a horizontal scanning circuit, and the vertical scanning circuit is bent so as not to intersect with the horizontal scanning circuit. 11. The imaging device according to claim 1, wherein
The imaging device according to claim 1, wherein the scanning circuit includes a vertical scanning circuit and a horizontal scanning circuit, and the horizontal scanning circuit is bent so as not to cross the vertical scanning circuit. 12. The imaging device according to claim 1, wherein
An imaging apparatus, wherein the scanning circuit extends in a column direction or a row direction over a plurality of columns or a plurality of rows. 13. The imaging device according to claim 1, wherein
The imaging device according to claim 1, wherein the scanning circuit is configured by arranging a block for scanning a plurality of rows or a plurality of columns for every plurality of rows or a plurality of columns. 14. The imaging device according to claim 1, wherein
An image pickup apparatus, wherein an area of a light receiving region is equal between one pixel region where the scanning circuit is arranged and one pixel region where the scanning circuit is not arranged. 15. The imaging device according to claim 1, wherein a power supply line is provided on the scanning circuit. 16. An imaging area in which pixels including a photoelectric conversion unit are arranged for imaging a subject image by dividing the image into a plurality of areas, and a plurality of vertical areas provided between the plurality of photoelectric conversion units in the area. And a common processing circuit for selectively transferring a signal from a vertical output line from which a signal from the pixel is read out to a horizontal output line. 17. The imaging device according to claim 16, wherein the common processing circuit includes a multiplexer. 18. The imaging device according to claim 16, wherein the common path includes an amplifier that amplifies a signal transferred to the horizontal output line. 19. The imaging device according to claim 16, wherein the common processing circuit occupies a whole area per one pixel region. 20. The imaging device according to claim 19, wherein the common processing circuit is arranged in mutually discrete pixels. 21. The imaging device according to claim 16, wherein the common processing circuit occupies a partial area for one pixel region. 22. The imaging device according to claim 16, wherein a power supply line is provided on the common processing circuit. 23. An imaging region in which a plurality of pixels including a photoelectric conversion unit are arranged to capture an image of a subject by dividing the image into a plurality of regions, and an external terminal or a plurality of external terminals provided between the plurality of photoelectric conversion units in the region. And / or a protection circuit. 24. The imaging device according to claim 23, wherein the protection circuit includes a protection resistor. 25. The imaging device according to claim 23, wherein the protection circuit includes a protection diode. 26. The imaging device according to claim 23, wherein the external terminal is provided with a bump. 27. The imaging device according to claim 23, wherein said external terminal occupies the entire area of one pixel region. 28. The imaging device according to claim 23, wherein said external terminal occupies a partial area per pixel region. 29. The imaging device according to claim 23, wherein the protection circuit occupies the entire area of one pixel region. 30. The imaging device according to claim 23, wherein the protection circuit occupies a partial area per pixel region. 31. The imaging device according to claim 23, wherein the external terminal is arranged in one pixel region. 32. The imaging device according to claim 23, wherein the external terminals are arranged in a plurality of pixel regions. 33. The imaging device according to claim 33, wherein the external terminal occupies a partial area in each pixel region. 34. The imaging device according to claim 23, wherein the external terminal and the protection circuit are arranged in a same pixel region. 35. The imaging device according to claim 34, wherein the external terminal and the protection circuit are arranged side by side. 36. The imaging device according to claim 34, wherein the external terminal and the protection circuit are arranged so as to overlap with each other. 37. The imaging device according to claim 23, wherein the external terminal and the protection circuit are arranged in different pixel regions. 38. The imaging device according to claim 23, wherein a pixel region where the external terminal is provided and a pixel region where the protection circuit is provided are adjacent to each other. Imaging device. 39. The imaging device according to claim 23, wherein an image area where the external terminal is arranged and a pixel area where the protection circuit is arranged are separated from each other. Characteristic imaging device. 40. The imaging device according to claim 30, wherein a protection resistor is provided between the external terminal and the protection circuit. 41. The image pickup device according to claim 23, wherein the external terminal is an external terminal connected to a wiring sandwiched between boundaries of a first region and a second region. Any one of the external terminals disposed in the first region is an external terminal connected to another wiring interposed between the boundary sides, and any of the external terminals disposed in the second region is connected to the external terminal. An imaging device, which is not located at the same position in a direction along a side. 42. An image pickup device which divides a subject into a plurality of regions to form one image, wherein the external terminal is connected to a wiring sandwiched between boundaries of the first region and the second region. Each of the external terminals arranged in the first area is
An external terminal connected to another wiring interposed between the boundary sides and not located at the same position in a direction along the boundary side, neither of the external terminals arranged in the second region. Imaging device. 43. A radiation imaging apparatus comprising: the imaging apparatus according to claim 23; a scintillator plate; and a fiber optic plate. 44. A radiation imaging apparatus according to claim 43, signal processing means for processing a signal from the radiation imaging apparatus, recording means for recording a signal from the signal processing means, and signal processing. Radiographic imaging, comprising: display means for displaying a signal from the means; transmission processing means for transmitting a signal from the signal processing means; and a radiation source for generating the radiation. system.