JP2002088149A - Polyether resin, its production method and insulating material - Google Patents
Polyether resin, its production method and insulating materialInfo
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- JP2002088149A JP2002088149A JP2000277769A JP2000277769A JP2002088149A JP 2002088149 A JP2002088149 A JP 2002088149A JP 2000277769 A JP2000277769 A JP 2000277769A JP 2000277769 A JP2000277769 A JP 2000277769A JP 2002088149 A JP2002088149 A JP 2002088149A
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- polyether resin
- substituent
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Abstract
(57)【要約】 (修正有)
【課題】熱硬化性官能基をもつポリエーテル樹脂および
その製造方法を提供し、これを用いて得られる耐薬品性
に優れる電子絶縁材料を提供する。
【解決手段】〔1〕下式(1)の繰り返し単位を有する
ポリエーテル樹脂。
(式中、R1〜R11は、それぞれ独立に、水素原子、置
換基を有してもよい炭素数1〜10のアルキル基、もし
くは置換基を有してもよい炭素数6〜10のシクロアル
キル基、置換基を有してもよい炭素数2〜10のアルケ
ニル基、置換基を有してもよい炭素数2〜10のアルキ
ニル基、もしくは置換基を有してもよい炭素数6〜10
の芳香族環、炭素数1〜10のアルコキシ基、カルボニ
ル基を持つ置換基、またはアルコール基を持つ置換基の
いずれかを示す。また、式中Xは、単結合、炭素数1〜
20の炭化水素基、−O−、−CO−のいずれかを示
す。)
〔2〕〔1〕に記載のポリエーテル樹脂を用いてなる絶
縁材料ならびに絶縁膜。[PROBLEMS] To provide a polyether resin having a thermosetting functional group and a method for producing the same, and to provide an electronic insulating material having excellent chemical resistance obtained by using the same. [1] A polyether resin having a repeating unit represented by the following formula (1). (Wherein, R 1 to R 11 are each independently a hydrogen atom, an alkyl group having 1 to 10 carbon atoms which may have a substituent, or a C 6 to 10 carbon atom which may have a substituent. A cycloalkyl group, an alkenyl group having 2 to 10 carbon atoms which may have a substituent, an alkynyl group having 2 to 10 carbon atoms which may have a substituent, or 6 carbon atoms which may have a substituent -10
Or a substituent having an alkoxy group having 1 to 10 carbon atoms, a carbonyl group, or a substituent having an alcohol group. In the formula, X is a single bond, having 1 to 1 carbon atoms.
20 represents any of a hydrocarbon group, -O-, and -CO-. [2] An insulating material and an insulating film using the polyether resin according to [1].
Description
【0001】[0001]
【発明の属する技術分野】本発明は、熱硬化性官能基を
有するポリエーテル樹脂とその製造方法および該ポリエ
ーテル樹脂を用いてなる絶縁材料に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polyether resin having a thermosetting functional group, a method for producing the same, and an insulating material using the polyether resin.
【0002】[0002]
【従来の技術】側鎖として熱硬化性官能基を有する樹脂
にはこれまでにいくつかの例がある。具体的に例を挙げ
れば、特公平5−8932号公報、特公平5−8933
号公報に、酸化重合により得られたポリエーテル樹脂に
アリル基、プロパルギル基を導入した例が記載されてい
る。また、側鎖としてビニル基を有する樹脂についても
公知の例がある。具体的には、ポリエーテルスルホンあ
るいはポリオキシフェニレン樹脂をクロロメチル化した
ものを経由しビニル基が導入した例がMacromo
l.Chem.185,2319(1984)に記載さ
れている。しかしながら、これらの方法は、それぞれ、
低温での硬化反応が困難であるか、あるいは反応操作が
比較的複雑であるなどの問題点を有している。2. Description of the Related Art There are several examples of resins having a thermosetting functional group as a side chain. Specific examples include JP-B 5-8932 and JP-B 5-8933.
Japanese Patent Application Laid-Open Publication No. H11-146, pp. 147-64 describes an example in which an allyl group or a propargyl group is introduced into a polyether resin obtained by oxidative polymerization. There are also known examples of resins having a vinyl group as a side chain. Specifically, an example in which a vinyl group is introduced via chloromethylated polyethersulfone or polyoxyphenylene resin is described in Macromo.
l. Chem. 185, 2319 (1984). However, each of these methods
There are problems such as that the curing reaction at low temperature is difficult or the reaction operation is relatively complicated.
【0003】また、電子デバイスの絶縁膜では、配線間
が微細化することによって、絶縁膜自体の誘電率が問題
視されてきた。これまで絶縁膜として使用されてきたシ
リカ系絶縁膜では、伝達速度低下を抑制することが難し
い。この解決案として、有機ポリマーがその優れた電気
特性から注目されてきた。また、絶縁膜としては、電気
特性のみならず、優れた耐熱性が求められることから、
芳香族環を主鎖に有するポリマー、特に、耐薬品性に優
れた特徴を持つ熱硬化性官能基を側鎖に有する芳香族ポ
リマーが期待されている。[0003] Further, in an insulating film of an electronic device, the dielectric constant of the insulating film itself has been regarded as a problem due to miniaturization between wirings. In the case of a silica-based insulating film that has been used as an insulating film, it is difficult to suppress a decrease in transmission speed. As a solution to this, organic polymers have attracted attention due to their excellent electrical properties. In addition, since the insulating film is required to have not only electrical characteristics but also excellent heat resistance,
Polymers having an aromatic ring in the main chain, particularly aromatic polymers having a thermosetting functional group in the side chain having excellent chemical resistance are expected.
【0004】[0004]
【発明が解決しようとする課題】本発明の目的は、熱硬
化性官能基をもつポリエーテル樹脂およびその製造方法
を提供することにある。また、これを用いて得られる耐
薬品性に優れる電子絶縁材料を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a polyether resin having a thermosetting functional group and a method for producing the same. Another object of the present invention is to provide an electronic insulating material having excellent chemical resistance obtained by using the same.
【0005】[0005]
【課題を解決するための手段】本発明は、〔1〕下式
(1)の繰り返し単位を有するポリエーテル樹脂に係る
ものである。 (式中、R1〜R11は、それぞれ独立に、水素原子、置
換基を有してもよい炭素数1〜10のアルキル基、もし
くは置換基を有してもよい炭素数6〜10のシクロアル
キル基、置換基を有してもよい炭素数2〜10のアルケ
ニル基、置換基を有してもよい炭素数2〜10のアルキ
ニル基、もしくは置換基を有してもよい炭素数6〜10
の芳香族環、炭素数1〜10のアルコキシ基、カルボニ
ル基を持つ置換基、またはアルコール基を持つ置換基の
いずれかを示す。また、式中Xは、単結合、炭素数1〜
20の炭化水素基、−O−、−CO−のいずれかを示
す。)Means for Solving the Problems The present invention relates to [1] a polyether resin having a repeating unit represented by the following formula (1). (Wherein, R 1 to R 11 are each independently a hydrogen atom, an alkyl group having 1 to 10 carbon atoms which may have a substituent, or a C 6 to 10 carbon atom which may have a substituent. A cycloalkyl group, an alkenyl group having 2 to 10 carbon atoms which may have a substituent, an alkynyl group having 2 to 10 carbon atoms which may have a substituent, or 6 carbon atoms which may have a substituent -10
Or a substituent having an alkoxy group having 1 to 10 carbon atoms, a carbonyl group, or a substituent having an alcohol group. In the formula, X is a single bond, having 1 to 1 carbon atoms.
20 represents any of a hydrocarbon group, -O-, and -CO-. )
【0006】また、本発明は、〔2〕下式(2)の繰り
返し単位を有するポリエーテル樹脂に係るものである。 (式中、R1〜R11、Xは式(1)における定義と同じで
ある。)The present invention also relates to [2] a polyether resin having a repeating unit represented by the following formula (2). (In the formula, R 1 to R 11 and X are the same as defined in the formula (1).)
【0007】また、本発明は、〔3〕下式(3)の繰り
返し単位を有する熱硬化性ポリエーテル樹脂に係るもの
である。 (式中、R1〜R11、Xは式(1)における定義と同じで
ある。)Further, the present invention relates to [3] a thermosetting polyether resin having a repeating unit represented by the following formula (3). (In the formula, R 1 to R 11 and X are the same as defined in the formula (1).)
【0008】さらに、本発明は、〔4〕ジハロゲン化ア
セトフェノンとビスフェノール類との縮合反応工程を含
む〔1〕に記載のポリエーテル樹脂の製造方法に係るも
のである。また、本発明は、〔5〕前記〔1〕に記載の
ポリエーテル樹脂のアセチル基を還元反応し、CH3C
HOH基に変換する工程を含むことを特徴とする〔2〕
に記載のポリエーテル樹脂の製造方法に係るものであ
る。また、本発明は、〔6〕前記〔2〕に記載のポリエ
ーテル樹脂のCH3CHOH基を脱水反応し、ビニル基
に変換する工程を含む〔3〕に記載のポリエーテル樹脂
の製造方法に係るものである。Further, the present invention relates to [4] the method for producing a polyether resin according to [1], which comprises a condensation reaction step of a dihalogenated acetophenone and a bisphenol. Further, the present invention provides [5] a reduction reaction of an acetyl group of the polyether resin described in the above [1] to obtain CH 3 C
[2] comprising a step of converting to an HOH group.
According to the method for producing a polyether resin described in (1). Also, the present invention provides the method for producing a polyether resin according to [3], which comprises a step of [6] converting the CH 3 CHO group of the polyether resin according to [2] to a vinyl group by a dehydration reaction. It is related.
【0009】さらに、本発明は、〔7〕前記〔1〕〜
〔3〕のいずれかに記載のポリエーテル樹脂を用いてな
る絶縁材料に係るものである。また、本発明は、〔8〕
(A)前記〔1〕〜〔4〕のいずれかに記載のポリエー
テル樹脂、(B)有機溶媒を必須成分としてなる絶縁膜
形成用塗布液に係るものである。また、本発明は、
Further, the present invention provides [7] The above [1] to [1].
The present invention relates to an insulating material using the polyether resin according to any one of [3]. Further, the present invention relates to [8]
(A) A polyether resin according to any one of the above [1] to [4], and (B) a coating liquid for forming an insulating film comprising an organic solvent as an essential component. Also, the present invention
〔9〕前記〔8〕に記載の絶縁膜形成用塗布液を用いて
得られる絶縁膜に係るものである。[9] An insulating film obtained by using the coating liquid for forming an insulating film according to [8].
【0010】[0010]
【発明の実施の形態】次に、本発明を詳細に説明する。
本発明の式(1)〜(3)において、R1〜R11はそれ
ぞれ独立に、水素原子、置換基を有してもよい炭素数1
〜10のアルキル基、もしくは置換基を有してもよい炭
素数6〜10のシクロアルキル基、置換基を有してもよ
い炭素数2〜10のアルケニル基、置換基を有してもよ
い炭素数2〜10のアルキニル基、もしくは置換基を有
してもよい炭素数6〜10の芳香族環、炭素数1〜10
のアルコキシ基、カルボニル基を持つ置換基、またはア
ルコール基を持つ置換基のいずれかを示す。Next, the present invention will be described in detail.
In the formulas (1) to (3) of the present invention, R 1 to R 11 each independently represent a hydrogen atom or a carbon atom having 1 or less substituents.
An alkyl group having 10 to 10 carbon atoms, or a cycloalkyl group having 6 to 10 carbon atoms which may have a substituent, an alkenyl group having 2 to 10 carbon atoms which may have a substituent, or a substituent. An alkynyl group having 2 to 10 carbon atoms, or an aromatic ring having 6 to 10 carbon atoms which may have a substituent,
Represents a substituent having an alkoxy group, a carbonyl group, or a substituent having an alcohol group.
【0011】炭素数1〜10のアルキル基として、メチ
ル基、エチル基、プロピル基等が挙げられる。炭素数6
〜10のシクロアルキル基として、シクロヘキシル基、
シクロヘプチル基等が挙げられる。炭素数2〜10のア
ルケニル基として、ビニル基、アリル基、プロペニル基
等が挙げられる。炭素数2〜10のアルキニル基とし
て、エチニル基、プロパルギル基等が挙げられる。置換
基を有してもよい炭素数6〜10の芳香族環として、フ
ェニル基、ナフチル基等が挙げられる。炭素数1〜10
のアルコキシ基として、メトキシ基、エトキシ基等が挙
げられる。カルボニル基を持つ置換基としてアセチル基
等が挙げられ、アルコール基を持つ置換基としてCH3
CHOH基が挙げられる。また、ここで、置換基を有し
てもよいとされる置換基としては、アルキル基、アルケ
ニル基、アルキニル基、芳香族環等が挙げられる。Examples of the alkyl group having 1 to 10 carbon atoms include a methyl group, an ethyl group and a propyl group. Carbon number 6
As a cycloalkyl group of 10 to 10, a cyclohexyl group,
And a cycloheptyl group. Examples of the alkenyl group having 2 to 10 carbon atoms include a vinyl group, an allyl group, and a propenyl group. Examples of the alkynyl group having 2 to 10 carbon atoms include an ethynyl group and a propargyl group. Examples of the aromatic ring having 6 to 10 carbon atoms which may have a substituent include a phenyl group and a naphthyl group. Carbon number 1-10
Examples of the alkoxy group include a methoxy group and an ethoxy group. Acetyl groups and the like as a substituent having a carbonyl group, CH 3 as a substituent having an alcohol group
CHOH groups. Here, examples of the substituent which may have a substituent include an alkyl group, an alkenyl group, an alkynyl group, and an aromatic ring.
【0012】また、本発明における式(1)〜(3)に
おいて、式中Xは、単結合、炭素数1〜20の炭化水素
基、−O−、−CO−のいずれかを示す。炭素数1〜2
0の炭化水素基の具体例を示せば、−CH2−、−C
(CH3)2−、−CH(CH3)−、−C(CH3)(C
H2CH3)−、−C(CH3)(CH2CH(CH3)2)
−、などの直鎖もしくは分岐したものが挙げられ、ま
た、 などが挙げられ、Xとして、単結合、または下式(4)
のいずれかが好ましい。さらにこれらは置換基を有する
こともできる。 In the formulas (1) to (3) of the present invention, X represents a single bond, a hydrocarbon group having 1 to 20 carbon atoms, -O-, or -CO-. Carbon number 1-2
If Shimese Specific examples of the hydrocarbon group 0, -CH 2 -, - C
(CH 3) 2 -, - CH (CH 3) -, - C (CH 3) (C
H 2 CH 3) -, - C (CH 3) (CH 2 CH (CH 3) 2)
-, Such as linear or branched, and And X is a single bond or the following formula (4)
Is preferred. Furthermore, they can also have substituents.
【0013】R1〜R11およびXは、該ポリエーテルに
対する要求性能に応じて選択することが好ましい。例え
ば、誘電率を低下させたい場合には、R1〜R11および
Xは、誘電率低下に効果のある嵩高い置換基を用いるこ
とが好ましい。また、耐熱性を高めたい場合には、これ
らは耐熱性の高い置換基を用いることが好ましい。It is preferable that R 1 to R 11 and X are selected according to the required performance for the polyether. For example, when it is desired to lower the dielectric constant, it is preferable that R 1 to R 11 and X use a bulky substituent which is effective in lowering the dielectric constant. In order to increase heat resistance, it is preferable to use a substituent having high heat resistance.
【0014】本発明の〔1〕に記載のポリエーテル樹脂
の製造方法は、ジハロゲン化アセトフェノンとビスフェ
ノール類との縮合反応工程を含むことを特徴とする。本
発明の製造方法におけるジハロゲン化アセトフェノン
は、ベンゼン環にハロゲン原子が2個以上、アセチル基
が1個以上置換しているものを示す。この例を具体的に
示せば、ジフルオロアセトフェノン、ジクロロアセトフ
ェノン、ジブロモアセトフェノン、ジヨードアセトフェ
ノン、ジフルオロメチルアセトフェノン、ジクロロメチ
ルアセトフェノン、ジブロモメチルアセトフェノン、ジ
ヨードメチルアセトフェノン(各々各種異性体を含む)
などが挙げられるが、これらに限定されるものではな
い。[0014] The method for producing a polyether resin according to [1] of the present invention is characterized by comprising a condensation reaction step of a dihalogenated acetophenone and a bisphenol. The dihalogenated acetophenone in the production method of the present invention indicates a benzene ring in which two or more halogen atoms and one or more acetyl groups are substituted. If this example is specifically shown, difluoroacetophenone, dichloroacetophenone, dibromoacetophenone, diiodoacetophenone, difluoromethylacetophenone, dichloromethylacetophenone, dibromomethylacetophenone, diiodomethylacetophenone (each including various isomers)
And the like, but are not limited to these.
【0015】本発明におけるビスフェノール類とは1分
子中に2個のフェノール性OH基をもつものであれば、
特に限定されない。具体的には、ビスフェノールA、ビ
スフェノールF、ビフェノール、シクロヘキシリデンビ
スフェノール、ビス(ヒドロキシフェニル)メタノン、
(1−メチル−エチリデン)ビス[2−シクロヘキシル
フェノール]、シクロヘキシリデンビス[2−シクロヘ
キシルフェノール]等の例が挙げられる。これらビスフ
ェノール類を2種類以上混合して用いることも可能であ
る。The bisphenols in the present invention are those having two phenolic OH groups in one molecule.
There is no particular limitation. Specifically, bisphenol A, bisphenol F, biphenol, cyclohexylidenebisphenol, bis (hydroxyphenyl) methanone,
Examples include (1-methyl-ethylidene) bis [2-cyclohexylphenol], cyclohexylidenebis [2-cyclohexylphenol], and the like. It is also possible to use a mixture of two or more of these bisphenols.
【0016】本発明において、ジハロゲン化アセトフェ
ノンとビスフェノール類との縮合反応はアルカリ条件下
で行うことができる。このときの溶媒は、特に限定され
るものではないが、沸点および反応の進行のしやすさか
ら、ジメチルホルムアミド、ジメチルアセトアミド、ジ
メチルスルホキシド、ベンゾフェノンなどが好適に用い
られる。In the present invention, the condensation reaction between the dihalogenated acetophenone and bisphenols can be carried out under alkaline conditions. The solvent at this time is not particularly limited, but dimethylformamide, dimethylacetamide, dimethylsulfoxide, benzophenone and the like are preferably used from the viewpoint of the boiling point and the ease of the reaction.
【0017】また、該縮合反応において使用されるアル
カリ物質は特に限定されないが、具体的に例示すれば、
水酸化ナトリウム、水酸化カリウム、炭酸ナトリウム、
炭酸カリウムなどが挙げられる。これらは、固体、また
は水溶液などの溶液の形で用いることができる。The alkali substance used in the condensation reaction is not particularly limited.
Sodium hydroxide, potassium hydroxide, sodium carbonate,
Potassium carbonate and the like. These can be used in the form of a solid or a solution such as an aqueous solution.
【0018】縮合反応は、窒素、アルゴンなどの不活性
雰囲気下で行われることが好ましい。また、反応温度は
特に限定されないが、反応速度などの点から見て、好ま
しくは50℃以上300℃未満、さらに好ましくは10
0℃以上200℃未満である。The condensation reaction is preferably carried out under an inert atmosphere such as nitrogen or argon. The reaction temperature is not particularly limited, but is preferably 50 ° C. or more and less than 300 ° C., more preferably 10 ° C. in view of the reaction rate and the like.
0 ° C or more and less than 200 ° C.
【0019】また、本発明の〔2〕に記載のポリエーテ
ル樹脂の製造方法は、前記〔1〕に記載のポリエーテル
樹脂のアセチル基を還元反応し、CH3CHOH基に変
換する工程を含むことを特徴とする。本発明において、
アセチル基の還元反応は、溶媒中で還元剤と共存せしめ
ることによって行うことができる。この時の溶媒は、特
に限定されない。The method for producing a polyether resin according to [2] of the present invention includes a step of subjecting the acetyl group of the polyether resin according to [1] to a reduction reaction to convert the acetyl group into a CH 3 CHOH group. It is characterized by the following. In the present invention,
The reduction reaction of the acetyl group can be performed by coexisting with a reducing agent in a solvent. The solvent at this time is not particularly limited.
【0020】還元反応に用いられる還元剤は特に限定さ
れないが、具体例を示せば、水素化ホウ素ナトリウム、
水素化ホウ素リチウム、水素化ホウ素亜鉛、トリ第二ブ
チル水素化ホウ素リチウム、水素化アルミニウムリチウ
ムなどが挙げられる。The reducing agent used in the reduction reaction is not particularly limited, but specific examples include sodium borohydride,
Examples include lithium borohydride, zinc borohydride, lithium tri-butyl borohydride, lithium aluminum hydride and the like.
【0021】また、本発明の〔3〕に記載のポリエーテ
ル樹脂の製造方法は、前記〔2〕に記載のポリエーテル
樹脂のCH3CHOH基を脱水反応し、ビニル基に変換
する工程を含むことを特徴とする。本発明において、C
H3CHOH基の脱水反応は、溶媒中で行われる。この
場合の溶媒は、特に限定されない。脱水反応は、脱水剤
と共存せしめることによってより効率的に行うことがで
きる。Further, the method for producing a polyether resin according to [3] of the present invention comprises a step of converting a CH 3 CHO group of the polyether resin according to [2] into a vinyl group by a dehydration reaction. It is characterized by the following. In the present invention, C
The dehydration reaction of the H 3 CHOH group is performed in a solvent. The solvent in this case is not particularly limited. The dehydration reaction can be performed more efficiently by coexisting with a dehydrating agent.
【0022】脱水反応に用いられる脱水剤の具体例を示
せば、硫酸、りん酸、硫酸水素カリウム、シュウ酸、p
−トルエンスルホン酸、三フッ化ホウ素エーテル錯体、
ヨウ素、無水硫酸銅などが挙げられる。Specific examples of the dehydrating agent used in the dehydration reaction include sulfuric acid, phosphoric acid, potassium hydrogen sulfate, oxalic acid, p
-Toluene sulfonic acid, boron trifluoride etherate,
Examples thereof include iodine and anhydrous copper sulfate.
【0023】本発明における式(3)の単位構造を有す
るポリエーテルは、任意の方法で硬化させることができ
る。具体的には、加熱による方法の他に、電子線、光な
どによって硬化することが可能である。The polyether having a unit structure of the formula (3) in the present invention can be cured by any method. Specifically, it is possible to cure by an electron beam, light, or the like, in addition to the method using heating.
【0024】また、本発明における式(2)の単位構造
を有するポリエーテルも、加熱により脱水反応を起こ
し、ビニル基を含有するポリエーテルを経由して硬化さ
せることができる。Further, the polyether having the unit structure of the formula (2) in the present invention can also undergo a dehydration reaction by heating and be cured via a vinyl group-containing polyether.
【0025】本発明の絶縁材料は、前記〔1〕〜〔3〕
のいずれかに記載のポリエーテル樹脂を用いてなること
を特徴とする。本発明におけるポリエーテル樹脂を用い
てなる絶縁材料としては、層間絶縁膜などの半導体また
はLCD用絶縁材料、銅張積層板などのプリント配線材
料が挙げられる。The insulating material according to the present invention comprises the above [1] to [3]
Wherein the polyether resin is used. Examples of the insulating material using a polyether resin in the present invention include semiconductors such as interlayer insulating films or insulating materials for LCDs, and printed wiring materials such as copper-clad laminates.
【0026】本発明の絶縁膜形成用塗布液は、(A)前
記〔1〕〜〔3〕のいずれかに記載のポリエーテル樹
脂、(B)有機溶媒を必須成分としてなることを特徴と
する。本発明の絶縁膜は、前記の絶縁膜形成用塗布液を
用いて得られる。本発明において絶縁膜形成用塗布液を
構成するにあたり必須成分となる有機溶媒は、有機溶媒
であれば、特に限定はされない。具体的に例示すれば、
ヘキサン、ヘプタン、シクロヘキサンなどの脂肪族炭化
水素系溶剤;ベンゼン、トルエン、キシレンなどの炭化
水素系溶剤;メタノール、エタノール、イソプロパノー
ル、1−ブタノール、2−エトキシメタノール、2−エ
トキシエタノール、3−メトキシプロパノール等のアル
コール系溶剤;アセチルアセトン、メチルエチルケト
ン、メチルイソブチルケトン、3−ペンタノン、2−ヘ
プタノン等のケトン系溶剤;酢酸プロピル、酢酸ブチ
ル、酢酸イソブチル、プロピレングリコールモノメチル
エーテルアセテート、乳酸エチル等のエステル系溶剤;
ジイソプロピルエーテル、ジブチルエーテル、アニソー
ル等のエーテル系溶剤が工業的に入手可能な溶剤として
用いることができる。また、界面活性剤、シランカップ
リング剤等の他の添加剤を混合することもできる。The coating liquid for forming an insulating film according to the present invention comprises (A) a polyether resin as described in any one of the above [1] to [3] and (B) an organic solvent as essential components. . The insulating film of the present invention is obtained using the above-mentioned coating liquid for forming an insulating film. In the present invention, the organic solvent that is an essential component in constituting the coating liquid for forming an insulating film is not particularly limited as long as it is an organic solvent. To give a concrete example,
Aliphatic hydrocarbon solvents such as hexane, heptane and cyclohexane; hydrocarbon solvents such as benzene, toluene and xylene; methanol, ethanol, isopropanol, 1-butanol, 2-ethoxymethanol, 2-ethoxyethanol and 3-methoxypropanol Alcohol solvents such as acetylacetone, methyl ethyl ketone, methyl isobutyl ketone, 3-pentanone and 2-heptanone; ester solvents such as propyl acetate, butyl acetate, isobutyl acetate, propylene glycol monomethyl ether acetate, and ethyl lactate;
Ether solvents such as diisopropyl ether, dibutyl ether and anisole can be used as commercially available solvents. Further, other additives such as a surfactant and a silane coupling agent can be mixed.
【0027】本発明によれば、芳香族環に直接結合した
形のビニル基を含有したポリマーが得られることから、
熱硬化反応を比較的低温にて行うことのできるポリエー
テル樹脂を得ることができる。According to the present invention, a polymer containing a vinyl group directly bonded to an aromatic ring can be obtained.
A polyether resin capable of performing a thermosetting reaction at a relatively low temperature can be obtained.
【0028】また、本発明によれば、加熱などの方法に
よる硬化反応を行わしめることにより、耐熱性、耐薬品
性、絶縁性などの点で優れた特性を示す熱硬化性ポリエ
ーテル樹脂を得ることができる。According to the present invention, a thermosetting polyether resin having excellent properties in terms of heat resistance, chemical resistance, insulation and the like is obtained by performing a curing reaction by a method such as heating. be able to.
【0029】さらに、本発明によれば、使用するビスフ
ェノールを適当に選択することができ、この選択の自由
度により、耐熱性、誘電率、熱硬化前の溶媒への溶解度
などの点で要求性能に応じた形のポリエーテル樹脂を得
ることができる。Further, according to the present invention, the bisphenol to be used can be appropriately selected, and depending on the degree of freedom of the selection, the required performance in terms of heat resistance, dielectric constant, solubility in a solvent before thermosetting, and the like can be obtained. Can be obtained.
【0030】[0030]
【実施例】本発明を更に詳細に説明するために以下に実
施例を示すが、本発明はこれらによって限定されるもの
ではない。 実施例1 窒素気流下にて、500mL4ツ口フラスコに1,1−
ビス(4−ヒドロキシ−3−シクロヘキシルフェニル)
シクロヘキシリデン43.2g、炭酸カリウム43.2
g、2’,4’−ジクロロアセトフェノン18.9g、
ジメチルスルホキシド600g、およびトルエン12
0.0gを仕込み、170℃/8時間保温攪拌を行っ
た。メタノール/酢酸溶液に反応生成物を加え、析出さ
せた。析出した結晶をろ過し、大量のメタノールで洗浄
し、減圧乾燥させ、55.5gの製品を得た。これを樹
脂Aと呼ぶ。The present invention will be described in more detail with reference to the following Examples, but it should not be construed that the invention is limited thereto. Example 1 In a nitrogen stream, 1,1-
Bis (4-hydroxy-3-cyclohexylphenyl)
43.2 g of cyclohexylidene, 43.2 potassium carbonate
g, 2 ′, 4′-dichloroacetophenone 18.9 g,
600 g of dimethyl sulfoxide and 12 parts of toluene
0.0 g was charged and the mixture was stirred at 170 ° C. for 8 hours. The reaction product was added to a methanol / acetic acid solution to precipitate. The precipitated crystals were filtered, washed with a large amount of methanol, and dried under reduced pressure to obtain 55.5 g of a product. This is called resin A.
【0031】実施例2 1,1−ビス(4−ヒドロキシ−3−シクロヘキシルフ
ェニル)シクロヘキシリデンの代わりに4,4’−(9
H−フルオレン−9−イリデン)ビスフェノール35.
0gを仕込んだ以外は実施例1と同様にして55.9g
の製品を得た。これを樹脂Bと呼ぶ。Example 2 Instead of 1,1-bis (4-hydroxy-3-cyclohexylphenyl) cyclohexylidene, 4,4 '-(9
H-fluoren-9-ylidene) bisphenol 35.
55.9 g in the same manner as in Example 1 except that 0 g was charged.
Got the product. This is called resin B.
【0032】実施例3 樹脂Aを21.3g、N,N−ジメチルホルムアミド3
00gを500mL4つ口フラスコに仕込み、室温にて
水素化ホウ素ナトリウム5.0gを加えた。80℃/6
時間保温攪拌を行った。水に反応生成物を加え、析出さ
せた。析出した結晶をろ過し、水洗、減圧乾燥させ、1
7.0gの製品を得た。これを樹脂Cと呼ぶ。Example 3 21.3 g of resin A and N, N-dimethylformamide 3
00 g was charged into a 500 mL four-necked flask, and 5.0 g of sodium borohydride was added at room temperature. 80 ℃ / 6
The mixture was kept under stirring for an hour. The reaction product was added to water and precipitated. The precipitated crystals are filtered, washed with water, and dried under reduced pressure.
7.0 g of product were obtained. This is called resin C.
【0033】実施例4 樹脂Bを23.3g、N,N−ジメチルホルムアミド3
00gを500mL4つ口フラスコに仕込み、室温にて
水素化ホウ素ナトリウム3.8gを加えた。80℃/6
時間保温攪拌を行った。メタノールに反応生成物を加
え、析出させた。析出した結晶をろ過し、水洗、減圧乾
燥させ、20.2gの製品を得た。これを樹脂Dと呼
ぶ。Example 4 23.3 g of resin B, N, N-dimethylformamide 3
00 g was charged into a 500 mL four-necked flask, and 3.8 g of sodium borohydride was added at room temperature. 80 ℃ / 6
The mixture was kept under stirring for an hour. The reaction product was added to methanol and precipitated. The precipitated crystals were filtered, washed with water and dried under reduced pressure to obtain 20.2 g of a product. This is called resin D.
【0034】実施例5 樹脂C5.1g、トルエン100g、メチルヒドロキノ
ン0.2gを200mL4つ口フラスコに仕込み、12
0℃まで昇温した。りん酸1.2gを仕込み120℃/
4hr保温・攪拌を行った。反応マスをメタノールに注
入し、結晶を析出させた。乾燥後得量4.6gであっ
た。これを樹脂Eと呼ぶ。Example 5 A 200 mL four-necked flask was charged with 5.1 g of resin C, 100 g of toluene, and 0.2 g of methylhydroquinone.
The temperature was raised to 0 ° C. 1.2 g of phosphoric acid was charged and 120 ° C /
The mixture was kept warm and stirred for 4 hours. The reaction mass was poured into methanol to precipitate crystals. The amount obtained after drying was 4.6 g. This is called resin E.
【0035】実施例6 樹脂D9.4g、トルエン100g、ジメチルスルホキ
シド200g、メチルヒドロキノン0.6gを200m
L4つ口フラスコに仕込み、120℃まで昇温した。り
ん酸1.2gを仕込み120℃/4hr保温・攪拌を行
った。反応マスをメタノールに注入し、結晶を析出させ
た。乾燥後得量4.6gであった。これを樹脂Fと呼
ぶ。Example 6 9.4 g of resin D, 100 g of toluene, 200 g of dimethyl sulfoxide, and 0.6 g of methylhydroquinone were added to 200 m
It was charged into an L four-necked flask and heated to 120 ° C. 1.2 g of phosphoric acid was charged and the mixture was kept at 120 ° C. for 4 hours while keeping the temperature and stirring. The reaction mass was poured into methanol to precipitate crystals. The amount obtained after drying was 4.6 g. This is called resin F.
【0036】プロトンNMR測定により、表1のような
置換基を有するポリエーテル樹脂が得られたことが確認
された。各樹脂の内容を下表にまとめておく。Proton NMR measurement confirmed that a polyether resin having a substituent as shown in Table 1 was obtained. The contents of each resin are summarized in the table below.
【表1】 [Table 1]
【0037】参考例1 500mLの4つ口フラスコに1,1−ビス(4−ヒド
ロキシ−シクロヘキシルフェニル)シクロヘキシリデン
21.6g、苛性ソーダ4.0g、ベンゾフェノン7
0.0gおよびトルエン50.0gを仕込み、還流脱水
を行った。脱水が完了した後、ジブロモビフェニル1
5.6gを添加した。さらに塩化第1銅0.05gをピ
リジン5gに溶解させた溶液を添加し、内温185℃で
6時間反応させた。室温まで冷却させた後、メタノール
600gに酢酸10gを混合した溶液に反応溶液を加
え、生成物を析出させた。析出した結晶をろ過し、大量
のメタノールで洗浄し、ポリエーテル樹脂を得た。この
樹脂を樹脂Gと呼ぶ。Reference Example 1 In a 500 mL four-necked flask, 21.6 g of 1,1-bis (4-hydroxy-cyclohexylphenyl) cyclohexylidene, 4.0 g of sodium hydroxide, and benzophenone 7 were added.
0.0 g and 50.0 g of toluene were charged and reflux dehydration was performed. After dehydration is completed, dibromobiphenyl 1
5.6 g were added. Further, a solution in which 0.05 g of cuprous chloride was dissolved in 5 g of pyridine was added, and the mixture was reacted at an internal temperature of 185 ° C. for 6 hours. After cooling to room temperature, the reaction solution was added to a solution in which 10 g of acetic acid was mixed with 600 g of methanol to precipitate a product. The precipitated crystals were filtered and washed with a large amount of methanol to obtain a polyether resin. This resin is called resin G.
【0038】参考例2 窒素置換した300mLの4つ口フラスコに、テトラヒ
ドロフランを100mL仕込み、樹脂G4gを溶解させ
た。n−ブチルリチウム(1.6M、n−ヘキサン溶
液)を21.5mL加え、窒素気流下1時間攪拌した
後、アリルブロミド4.0gを加えさらに1時間攪拌を
行った。反応終了後、メタノール650g、酢酸20g
の混合溶媒中に反応溶液を加え、高分子量物を析出させ
た。ろ過後、メタノール洗浄、水洗を行い、白色粉末状
の樹脂を得た。この樹脂を樹脂Hと呼ぶ。Reference Example 2 In a 300 mL four-necked flask purged with nitrogen, 100 mL of tetrahydrofuran was charged, and 4 g of the resin G was dissolved. After adding 21.5 mL of n-butyllithium (1.6 M, n-hexane solution) and stirring for 1 hour under a nitrogen stream, 4.0 g of allyl bromide was added and the mixture was further stirred for 1 hour. After completion of the reaction, 650 g of methanol and 20 g of acetic acid
The reaction solution was added to the mixed solvent of the above to precipitate a high molecular weight substance. After filtration, washing with methanol and washing with water were performed to obtain a white powdery resin. This resin is called resin H.
【0039】実施例7、8、比較例1 樹脂E、Fをそれぞれ、固形分が20重量%になるよう
に2−ヘプタノンに溶解させた。樹脂Gを固形分が20
重量%になるようにアニソールに溶解させた。調製した
各々の溶液を0.2μmフィルターでろ過し、4インチ
シリコンウェハーに回転数2000rpmでスピンコー
トし、150℃で1分間ベークした後、窒素雰囲気下、
250℃で40分間熱処理を行った。各々の塗布膜を塗
布液に用いた溶媒に 分間浸漬し、耐溶剤性を調べ
た。この結果を表2に示す。膜厚に変化がなかったもの
に○、膜厚の減少が見られたものに×を付した。Examples 7 and 8 and Comparative Example 1 Resins E and F were each dissolved in 2-heptanone so that the solid content was 20% by weight. Resin G with a solid content of 20
It was dissolved in anisole to give a weight%. Each of the prepared solutions was filtered through a 0.2 μm filter, spin-coated on a 4-inch silicon wafer at a rotation speed of 2,000 rpm, and baked at 150 ° C. for 1 minute.
Heat treatment was performed at 250 ° C. for 40 minutes. Each coating film was immersed in the solvent used for the coating solution for minutes, and the solvent resistance was examined. Table 2 shows the results. ○ indicates that the film thickness did not change, and X indicates that the film thickness decreased.
【表2】 [Table 2]
【0040】[0040]
【発明の効果】本発明によれば、熱硬化性官能基を有す
るポリエーテル樹脂が容易な操作で提供され、該ポリエ
ーテル樹脂を用いて、電子デバイスの絶縁材料が得られ
る。本発明の絶縁材料は、誘電率が低く、耐薬品性に優
れる。According to the present invention, a polyether resin having a thermosetting functional group is provided by an easy operation, and an insulating material for an electronic device can be obtained using the polyether resin. The insulating material of the present invention has a low dielectric constant and excellent chemical resistance.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01B 3/42 H01B 3/42 G Fターム(参考) 4J005 AA24 BD00 4J038 DF051 KA06 NA04 NA14 NA21 5G305 AA07 AA11 AB10 AB31 AB36 BA09 BA18 CA13 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01B 3/42 H01B 3/42 GF term (Reference) 4J005 AA24 BD00 4J038 DF051 KA06 NA04 NA14 NA21 5G305 AA07 AA11 AB10 AB31 AB36 BA09 BA18 CA13
Claims (10)
特徴とするポリエーテル樹脂。 (式中、R1〜R11は、それぞれ独立に、水素原子、置
換基を有してもよい炭素数1〜10のアルキル基、もし
くは置換基を有してもよい炭素数6〜10のシクロアル
キル基、置換基を有してもよい炭素数2〜10のアルケ
ニル基、置換基を有してもよい炭素数2〜10のアルキ
ニル基、もしくは置換基を有してもよい炭素数6〜10
の芳香族環、炭素数1〜10のアルコキシ基、カルボニ
ル基を持つ置換基、またはアルコール基を持つ置換基の
いずれかを示す。また、式中Xは、単結合、炭素数1〜
20の炭化水素基、−O−、−CO−のいずれかを示
す。)1. A polyether resin having a repeating unit represented by the following formula (1). (Wherein, R 1 to R 11 are each independently a hydrogen atom, an alkyl group having 1 to 10 carbon atoms which may have a substituent, or a C 6 to 10 carbon atom which may have a substituent. A cycloalkyl group, an alkenyl group having 2 to 10 carbon atoms which may have a substituent, an alkynyl group having 2 to 10 carbon atoms which may have a substituent, or 6 carbon atoms which may have a substituent -10
Or a substituent having an alkoxy group having 1 to 10 carbon atoms, a carbonyl group, or a substituent having an alcohol group. In the formula, X is a single bond, having 1 to 1 carbon atoms.
20 represents any of a hydrocarbon group, -O-, and -CO-. )
特徴とするポリエーテル樹脂。 (式中、R1〜R11、Xは式(1)における定義と同じで
ある。)2. A polyether resin having a repeating unit represented by the following formula (2). (In the formula, R 1 to R 11 and X are the same as defined in the formula (1).)
特徴とする熱硬化性ポリエーテル樹脂。 (式中、R1〜R11、Xは式(1)における定義と同じで
ある。)3. A thermosetting polyether resin having a repeating unit represented by the following formula (3). (In the formula, R 1 to R 11 and X are the same as defined in the formula (1).)
であることを特徴とする請求項1〜3のいずれかに記載
のポリエーテル樹脂。 4. The polyether resin according to claim 1, wherein X is a single bond or any of the following formulas (4).
ール類との縮合反応工程を含むことを特徴とする請求項
1に記載のポリエーテル樹脂の製造方法。5. The method for producing a polyether resin according to claim 1, comprising a condensation reaction step of a dihalogenated acetophenone and a bisphenol.
チル基を還元反応し、CH3CHOH基に変換する工程
を含むことを特徴とする請求項2に記載のポリエーテル
樹脂の製造方法。6. The method for producing a polyether resin according to claim 2, further comprising a step of subjecting the acetyl group of the polyether resin according to claim 1 to a reduction reaction to convert the acetyl group into a CH 3 CHO group.
3CHOH基を脱水反応し、ビニル基に変換する工程を
含むことを特徴とする請求項3に記載のポリエーテル樹
脂の製造方法。7. CH of the polyether resin according to claim 2
The method for producing a polyether resin according to claim 3, further comprising a step of performing a dehydration reaction of 3 CHOH groups to convert them into vinyl groups.
テル樹脂を用いてなる絶縁材料。8. An insulating material using the polyether resin according to claim 1.
リエーテル樹脂、(B)有機溶媒の2種類を必須成分と
してなる絶縁膜形成用塗布液。9. A coating liquid for forming an insulating film comprising (A) the polyether resin according to claim 1 and (B) an organic solvent as essential components.
用いて得られる絶縁膜。10. An insulating film obtained by using the coating liquid for forming an insulating film according to claim 9.
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6815523B2 (en) | 2002-03-15 | 2004-11-09 | Sumitomo Chemical Company, Limited | Polyether and its production method |
WO2013118871A1 (en) * | 2012-02-09 | 2013-08-15 | 日産化学工業株式会社 | Composition for forming passivation film, including resin having carbon-carbon multiple bond |
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JPH11181078A (en) * | 1997-12-17 | 1999-07-06 | Mitsui Chem Inc | Polyether copolymer and its production |
JP2001146515A (en) * | 1999-09-09 | 2001-05-29 | Sumitomo Chem Co Ltd | Polyether resin, method for producing the same, and coating liquid for forming an insulating film |
JP2001151884A (en) * | 1999-11-24 | 2001-06-05 | Sumitomo Chem Co Ltd | Thermosetting polyether resin, method for producing the same, and coating liquid for forming insulating film |
JP2002020482A (en) * | 2000-07-05 | 2002-01-23 | Sumitomo Chem Co Ltd | Linear aromatic polymer, method for producing the same, and coating liquid for forming an insulating film |
-
2000
- 2000-09-13 JP JP2000277769A patent/JP5011600B2/en not_active Expired - Fee Related
Patent Citations (4)
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JPH11181078A (en) * | 1997-12-17 | 1999-07-06 | Mitsui Chem Inc | Polyether copolymer and its production |
JP2001146515A (en) * | 1999-09-09 | 2001-05-29 | Sumitomo Chem Co Ltd | Polyether resin, method for producing the same, and coating liquid for forming an insulating film |
JP2001151884A (en) * | 1999-11-24 | 2001-06-05 | Sumitomo Chem Co Ltd | Thermosetting polyether resin, method for producing the same, and coating liquid for forming insulating film |
JP2002020482A (en) * | 2000-07-05 | 2002-01-23 | Sumitomo Chem Co Ltd | Linear aromatic polymer, method for producing the same, and coating liquid for forming an insulating film |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6815523B2 (en) | 2002-03-15 | 2004-11-09 | Sumitomo Chemical Company, Limited | Polyether and its production method |
WO2013118871A1 (en) * | 2012-02-09 | 2013-08-15 | 日産化学工業株式会社 | Composition for forming passivation film, including resin having carbon-carbon multiple bond |
CN103946271A (en) * | 2012-02-09 | 2014-07-23 | 日产化学工业株式会社 | Composition for forming passivation film, including resin having carbon-carbon multiple bond |
KR20140128948A (en) * | 2012-02-09 | 2014-11-06 | 닛산 가가쿠 고교 가부시키 가이샤 | Composition for forming passivation film, including resin having carbon-carbon multiple bond |
JPWO2013118871A1 (en) * | 2012-02-09 | 2015-05-11 | 日産化学工業株式会社 | Composition for forming a passivation film comprising a resin having a carbon-carbon multiple bond |
US10174168B2 (en) | 2012-02-09 | 2019-01-08 | Nissan Chemical Industries, Ltd. | Composition for forming passivation film, including resin having carbon-carbon multiple bond |
KR102088868B1 (en) | 2012-02-09 | 2020-03-13 | 닛산 가가쿠 가부시키가이샤 | Composition for forming passivation film, including resin having carbon-carbon multiple bond |
Also Published As
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JP5011600B2 (en) | 2012-08-29 |
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