JP2002086350A - Polishing fluid for electrophoretic polishing and polishing method - Google Patents
Polishing fluid for electrophoretic polishing and polishing methodInfo
- Publication number
- JP2002086350A JP2002086350A JP2000274009A JP2000274009A JP2002086350A JP 2002086350 A JP2002086350 A JP 2002086350A JP 2000274009 A JP2000274009 A JP 2000274009A JP 2000274009 A JP2000274009 A JP 2000274009A JP 2002086350 A JP2002086350 A JP 2002086350A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- abrasive grains
- electrophoretic
- grindstone
- salt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 151
- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000012530 fluid Substances 0.000 title abstract description 5
- 239000006061 abrasive grain Substances 0.000 claims abstract description 63
- 239000007788 liquid Substances 0.000 claims abstract description 53
- 150000003839 salts Chemical class 0.000 claims abstract description 36
- 238000000227 grinding Methods 0.000 claims abstract description 31
- 239000000725 suspension Substances 0.000 claims abstract description 23
- 238000001962 electrophoresis Methods 0.000 claims abstract description 17
- 230000008569 process Effects 0.000 claims abstract description 7
- 238000007517 polishing process Methods 0.000 claims abstract description 5
- 238000012545 processing Methods 0.000 claims description 37
- 239000003002 pH adjusting agent Substances 0.000 claims description 15
- 239000002245 particle Substances 0.000 claims description 12
- 238000003672 processing method Methods 0.000 claims description 4
- 230000001112 coagulating effect Effects 0.000 abstract 2
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 22
- 239000000377 silicon dioxide Substances 0.000 description 11
- 229910003460 diamond Inorganic materials 0.000 description 9
- 239000010432 diamond Substances 0.000 description 9
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 6
- 238000004220 aggregation Methods 0.000 description 6
- 230000002776 aggregation Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000003754 machining Methods 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical group C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 239000011780 sodium chloride Substances 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000011882 ultra-fine particle Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、電気泳動研磨用の
研磨液および電気泳動研磨法を利用した研磨加工方法に
関する。The present invention relates to a polishing liquid for electrophoretic polishing and a polishing method using an electrophoretic polishing method.
【0002】[0002]
【従来の技術】セラミックス、ガラス、半導体などの硬
脆材料の精密仕上げを達成するために、研削などによる
粗加工後、ラッピング、ポリッシングによる仕上げ研磨
加工が多用されている。ポリッシングは、ポリッシャの
ポリッシングパッド上に軟質砥粒を散布して被加工物を
押しつけることにより実施され、さらに最近は、半導体
などの高品位平坦化加工法としてCMP(Chemic
al & Mechanical Polishin
g)と称される技術が急激に浸透しつつある。2. Description of the Related Art In order to achieve precision finishing of hard and brittle materials such as ceramics, glass, and semiconductors, rough finishing by grinding and the like, and finish polishing by lapping and polishing are often used. Polishing is performed by spraying soft abrasive grains on a polishing pad of a polisher and pressing a workpiece, and more recently, CMP (Chemic) has been used as a high-quality flattening method for semiconductors and the like.
al & Mechanical Polish
A technique called g) is rapidly penetrating.
【0003】CMP加工装置としては、たとえば特開平
7−297195号公報や特開平9−111117号公
報に記載の装置がある。このようなCMP加工装置によ
りLSIデバイスウエハをポリッシングする場合、ポリ
ッシャとしては一定の弾性率、繊維形状、形状パターン
を持ったポリウレタン製のポリッシングパッドが使用さ
れ、軟質砥粒としては、SiO2が一般的であり、その
他、CaCO3、BaCO3なども使用されている。[0003] As a CMP processing apparatus, there is, for example, an apparatus described in JP-A-7-297195 or JP-A-9-111117. When an LSI device wafer is polished by such a CMP processing apparatus, a polishing pad made of polyurethane having a constant elastic modulus, fiber shape, and shape pattern is used as a polisher, and SiO 2 is generally used as a soft abrasive. In addition, CaCO 3 , BaCO 3 and the like are also used.
【0004】一方、電気泳動を利用して遊離砥粒加工法
を固定砥粒加工法化する技術が提案されている。たとえ
ば特公平7−16878号公報には、一次粒子径が1μ
m以下の超微粒砥粒を分散させた懸濁液に通電すること
により懸濁液の超微粒砥粒を電気泳動により凝集させて
固形化する砥石の製造方法が開示されている。この方法
により形成された砥石層は、そのまま砥石として懸濁液
中で被加工物と接触させるという方法で加工に用いられ
る。また特開平10−139412号公報、特開平10
−202509号公報には、懸濁液の組成を改良した砥
石の製造法および電気泳動研磨方法が開示されている。On the other hand, a technique has been proposed in which a free abrasive grain processing method is changed to a fixed abrasive processing method using electrophoresis. For example, Japanese Patent Publication No. Hei 7-16878 discloses that the primary particle diameter is 1 μm.
A method for producing a grindstone is disclosed, in which a suspension in which ultrafine abrasive particles having a particle size of m or less are dispersed is made to aggregate the ultrafine abrasive particles of the suspension by electrophoresis and solidify. The grindstone layer formed by this method is used as a grindstone as it is in a suspension in contact with a workpiece in a suspension. Also, JP-A-10-139412, JP-A-10-139412
JP-A-202509 discloses a method for producing a grindstone and an electrophoretic polishing method in which the composition of a suspension is improved.
【0005】[0005]
【発明が解決しようとする課題】上記のような電気泳動
を利用すれば、超微粒砥粒を高密度で固化することがで
き、遊離砥粒加工法による問題点を解決してCMP加工
を行うことも可能で、高精度の研磨加工ができるとされ
ている。しかしながら、上記特公平7−16878号公
報に記載の砥石は、この砥石による研磨を懸濁液中で行
う場合、砥石層における超微粒砥粒の結合度を調節する
手段がなく、被加工物の材質や表面研磨の程度に応じた
砥粒層の硬さを調節することができない、という問題点
がある。また、特開平10−139412号公報に記載
のダイヤモンド微粒子の固定化方法は、工具にダイヤモ
ンド微粒子を完全に固定する方法であり、電気泳動によ
る超微粒砥粒の凝集を利用した電気泳動研磨法とは主旨
が異なる。また、特開平10−202509号公報に記
載の電気泳動研磨用研磨剤は、水に超微粒砥粒を懸濁さ
せただけの研磨剤であるので、特公平7−16878号
公報に記載の砥石の場合と同様、超微粒砥粒の結合度を
調節する手段がない。The use of electrophoresis as described above makes it possible to solidify ultrafine abrasive grains at a high density, and to solve the problems of the free abrasive grain processing method to carry out CMP processing. It is said that high-precision polishing can be performed. However, the grindstone disclosed in Japanese Patent Publication No. Hei 7-16878 has no means for adjusting the degree of bonding of ultrafine abrasive grains in a grindstone layer when polishing with the grindstone is performed in a suspension. There is a problem that the hardness of the abrasive layer cannot be adjusted according to the material and the degree of surface polishing. Further, the method of fixing diamond fine particles described in Japanese Patent Application Laid-Open No. 10-139412 is a method of completely fixing diamond fine particles to a tool, and employs an electrophoretic polishing method utilizing aggregation of ultrafine abrasive particles by electrophoresis. Is different in gist. Further, since the abrasive for electrophoretic polishing described in JP-A-10-202509 is an abrasive only obtained by suspending ultrafine abrasive grains in water, the grinding stone described in JP-B-7-16878 is used. As in the above case, there is no means for adjusting the degree of bonding of the ultrafine abrasive grains.
【0006】さらに、研磨加工方法にこのような電気泳
動研磨方法を利用したとしても、従来の研磨加工方法で
は、研削と研磨はそれぞれ異なる加工機械上で実施され
るので、被加工物の各加工機械への移し替え作業が必要
であり、また、この移し替えに伴って被加工物の加工基
準面が変化することから、加工能率や加工精度の向上に
も限界がある。Further, even if such an electrophoretic polishing method is used as a polishing method, in the conventional polishing method, grinding and polishing are performed on different processing machines, respectively. Since the transfer operation to the machine is necessary, and the transfer reference surface of the workpiece changes, there is a limit to the improvement of the processing efficiency and the processing accuracy.
【0007】本発明において解決すべき課題は、電気泳
動研磨法を利用した研磨加工において、凝集する超微粒
砥粒の結合度を調節可能とするとともに、研削から最終
表面仕上げにいたる一連の加工を同一加工機械のもとで
行うことを可能として、加工能率、加工精度のさらなる
向上をはかることにある。The problem to be solved in the present invention is to make it possible to adjust the degree of cohesion of agglomerating ultrafine abrasive grains in polishing using electrophoretic polishing, and to perform a series of processing from grinding to final surface finishing. An object of the present invention is to make it possible to perform processing under the same processing machine, and to further improve processing efficiency and processing accuracy.
【0008】[0008]
【課題を解決するための手段】本発明は、媒液に超微粒
砥粒を懸濁させた電気泳動研磨用研磨液であって、超微
粒砥粒を懸濁させた懸濁液に塩を添加したことを特徴と
する。またさらに、塩の添加による効果を向上させるた
めに、懸濁液に塩とともにpH調節剤を添加することが
望ましい。SUMMARY OF THE INVENTION The present invention provides a polishing liquid for electrophoretic polishing in which ultrafine abrasive grains are suspended in a medium, wherein a salt is added to the suspension in which the ultrafine abrasive grains are suspended. It is characterized by being added. Further, in order to improve the effect of the addition of the salt, it is desirable to add a pH adjuster together with the salt to the suspension.
【0009】電気泳動現象を用いた電気泳動研磨におい
て、砥石の作用面(電極の表面)に凝集する超微粒砥粒
は、緩やかに結合した状態にある。この状態において
は、水などの媒液に超微粒砥粒を懸濁させただけの研磨
液では、結合度を積極的に調節することはできないが、
超微粒砥粒を懸濁させた懸濁液に塩を添加することによ
り、結合度を調節することが可能となる。塩を添加する
ことにより結合度が変化するメカニズムの解明にはさら
なる詳細な研究が必要であるが、塩の添加により研磨液
中に分散した超微粒砥粒の表面ξ(ゼータ)電位が変化
し、液中での超微粒砥粒の凝集が促進されると考えられ
る。また、この場合の凝集の度合いは、研磨液のpH状
態によっても変化すると考えられる。In electrophoretic polishing using the electrophoretic phenomenon, ultrafine abrasive particles that aggregate on the working surface (electrode surface) of a grindstone are in a state of being loosely bound. In this state, with a polishing liquid in which ultrafine abrasive grains are merely suspended in a medium such as water, the degree of bonding cannot be positively adjusted,
By adding a salt to the suspension in which the ultrafine abrasive grains are suspended, the degree of bonding can be adjusted. More detailed research is needed to elucidate the mechanism by which salt is added to change the degree of bonding, but the addition of salt changes the surface ξ (zeta) potential of ultrafine abrasive grains dispersed in the polishing solution. It is considered that the aggregation of the ultrafine abrasive grains in the liquid is promoted. Further, it is considered that the degree of aggregation in this case also changes depending on the pH state of the polishing liquid.
【0010】凝集する超微粒砥粒の結合度を調節するこ
とにより、電気泳動研磨時の研磨力を従来の研磨液の場
合よりも大幅に高めることができる。このような効果が
期待できる塩としては、Na2CO3、NaHCO3、N
aClなどがある。電気泳動研磨時の研磨力が最大とな
る添加量の範囲は、塩の種類によっても異なるが、予め
実験的に求めることができる。また、塩の添加に加えて
pH調整剤を添加することにより、塩の添加による研磨
力の向上を最大限に発揮することができる。pH調整剤
としては、KOHやHClを用いることができる。研磨
力が最大となるpHの範囲は、塩の種類や添加量、pH
調整剤の種類によって異なるが、予め実験的に求めるこ
とができる。[0010] By adjusting the degree of bonding of the ultra-fine abrasive grains to be aggregated, the polishing power during electrophoretic polishing can be greatly increased as compared with the conventional polishing liquid. Salts that can be expected to have such an effect include Na 2 CO 3 , NaHCO 3 , N
aCl and the like. The range of the addition amount at which the polishing force at the time of electrophoretic polishing becomes maximum varies depending on the type of salt, but can be experimentally obtained in advance. Further, by adding the pH adjuster in addition to the addition of the salt, it is possible to maximize the improvement of the polishing power due to the addition of the salt. KOH or HCl can be used as the pH adjuster. The range of pH at which the polishing power is maximized depends on the type and amount of salt added and the pH.
Although it depends on the type of modifier, it can be determined experimentally in advance.
【0011】本発明の研磨加工方法は、媒液に超微粒砥
粒を懸濁させた懸濁液に塩を添加した研磨液、または前
記懸濁液に塩とともにpH調節剤を添加した研磨液を用
いて電気泳動法により砥石の作用面に超微粒砥粒を凝集
させながら被加工物の表面研磨加工を行うことを特徴と
する。The polishing method according to the present invention is directed to a polishing liquid in which a salt is added to a suspension in which ultrafine abrasive grains are suspended in a medium, or a polishing liquid in which a pH modifier is added to the suspension together with the salt. The method is characterized in that the surface of the workpiece is polished while the ultrafine abrasive grains are agglomerated on the working surface of the grindstone by electrophoresis using the method.
【0012】前述したように、超微粒砥粒を懸濁させた
懸濁液に塩を添加することにより、さらには塩とともに
pH調整剤を添加することにより、砥石の作用面に凝集
する超微粒砥粒の結合度を調節し、電気泳動研磨時の研
磨力を高めることができるので、研磨能率を高めること
ができる。As described above, by adding a salt to the suspension in which the ultrafine abrasive grains are suspended, and further by adding a pH adjusting agent together with the salt, the ultrafine abrasive particles which are aggregated on the working surface of the grinding stone are added. Since the degree of bonding of the abrasive grains can be adjusted and the polishing force during electrophoretic polishing can be increased, the polishing efficiency can be increased.
【0013】また、本発明の研磨加工方法は、被加工物
に対して砥石により表面研削加工を行った後、前記砥石
の作用面に超微粒砥粒を電気泳動法により凝集させて半
固定砥粒層を形成し、同一加工機械、同一基準面保持の
もとで被加工物に対して前記半固定砥粒層により表面研
磨加工を行うことを特徴とする。Further, in the polishing method of the present invention, after the surface of the workpiece is ground by a grindstone, ultrafine abrasive grains are agglomerated on the working surface of the grindstone by an electrophoresis method to form a semi-fixed abrasive. A grain layer is formed, and the surface is polished by the semi-fixed abrasive layer on the workpiece under the same processing machine and holding the same reference plane.
【0014】加工機械に取り付けた砥石による研削加工
後に電気泳動法により砥石に半固定砥粒層を形成し、こ
の半固定砥粒層により仕上げ研磨を行うことによって、
一連の加工工程を同一加工機械のもとで行うことができ
る。これにより、被加工物は加工の始めから最後まで加
工機械から取り外すことなく、同一基準面を保持した状
態のもとで加工を続けることができるので、高能率、高
精度の加工を達成することができる。[0014] A semi-fixed abrasive layer is formed on the grindstone by electrophoresis after grinding with a grindstone attached to a processing machine, and finish polishing is performed using the semi-fixed abrasive layer.
A series of processing steps can be performed under the same processing machine. As a result, the workpiece can be processed from the beginning to the end of the process without removing it from the processing machine while maintaining the same reference surface, achieving high efficiency and high precision processing. Can be.
【0015】また、半固定砥粒層による研磨は従来の遊
離砥粒による仕上げ研磨に比べて研磨力が高く、仕上げ
研磨の能率を高めることができる。とくに電気泳動研磨
用研磨液として、超微粒砥粒を懸濁させた懸濁液に塩を
添加した研磨液、または塩とともにpH調節剤を添加し
た研磨液を用いることにより、前述したように研磨力を
高めることができるので、研磨能率をさらに高めること
ができる。The polishing with the semi-fixed abrasive layer has a higher polishing force than the conventional finish polishing with free abrasive grains, and can improve the efficiency of the finish polishing. Particularly, by using a polishing liquid in which a salt is added to a suspension in which ultrafine abrasive grains are suspended or a polishing liquid in which a pH adjuster is added together with salt as a polishing liquid for electrophoretic polishing, the polishing is performed as described above. Since the power can be increased, the polishing efficiency can be further increased.
【0016】ここで、同一加工機械のもとで研削に引き
続き電気泳動研磨を行うために、加工機械には電気泳動
研磨用の研磨液タンクや電極、配線が取り付けられ、研
磨液タンク内に被加工物を固定する装置が設けられる。
研磨液タンク内への研磨液の注入は研削の前でも後でも
よいが、研削が終わった後に砥石を被加工物から所定の
距離だけ離し、電気泳動により砥石の作用面に超微粒砥
粒を凝集させることになる。この凝集により、砥石の作
用面と被加工物の間に超微粒砥粒を高濃度に含む粘稠な
流動物が生じる。この超微粒砥粒を含む粘稠な流動物の
層を本明細書では半固定砥粒層という。Here, in order to perform electrophoretic polishing subsequent to grinding under the same processing machine, a polishing liquid tank, electrodes, and wiring for electrophoretic polishing are attached to the processing machine, and the polishing liquid tank is covered in the polishing liquid tank. A device is provided for fixing the workpiece.
The polishing liquid may be injected into the polishing liquid tank before or after the grinding, but after the grinding is completed, the grinding wheel is separated from the workpiece by a predetermined distance, and the ultrafine abrasive grains are applied to the working surface of the grinding wheel by electrophoresis. Aggregation will occur. Due to this aggregation, a viscous fluid containing a high concentration of ultrafine abrasive grains is generated between the working surface of the grindstone and the workpiece. This layer of viscous fluid containing ultrafine abrasive grains is referred to herein as a semi-fixed abrasive layer.
【0017】電気泳動研磨用の超微粒砥粒としては、シ
リカ、酸化マンガン、酸化セリウム、ジルコニアなどの
酸化物砥粒が適している。超微粒砥粒の平均粒径は数n
m〜100nm程度のものが望ましく、媒液への混入量
は重量%で数%〜50%の範囲が望ましい。これらの条
件は基本的には従来の電気泳動研磨法と同様である。Oxide abrasive grains such as silica, manganese oxide, cerium oxide and zirconia are suitable as ultrafine abrasive grains for electrophoretic polishing. The average particle size of the ultrafine abrasive grains is several n
It is preferably about m to 100 nm, and the mixing amount in the medium is preferably in the range of several% to 50% by weight. These conditions are basically the same as in the conventional electrophoretic polishing method.
【0018】電気泳動研磨を利用する本発明の研磨加工
において使用する砥石としては、台金にダイヤモンド砥
粒を固着した電着砥石またはメタルボンド砥石を用いる
ことができる。この場合、電気泳動研磨はCMP加工と
して強酸性または強アルカリ性の研磨液が用いられるこ
ともあるので、このような研磨液に対する耐腐食性の点
から、電着砥石の場合はNiメッキ液による電着砥石が
適しており、メタルボンド砥石の場合はNiベースのメ
タルボンドを用いたメタルボンド砥石が適している。As a grindstone used in the polishing process of the present invention utilizing electrophoretic polishing, an electrodeposition grindstone in which diamond abrasive grains are fixed to a base metal or a metal bond grindstone can be used. In this case, a strongly acidic or strongly alkaline polishing solution may be used as the CMP process in the electrophoretic polishing. Therefore, from the viewpoint of corrosion resistance to such a polishing solution, in the case of an electrodeposited whetstone, an electroplating whetstone is applied by a Ni plating solution. A whetstone is suitable. In the case of a metal bond whetstone, a metal bond whetstone using a Ni-based metal bond is suitable.
【0019】[0019]
【発明の実施の形態】図1は本発明の研磨加工方法の基
本工程を模式的に示す説明図であり、(a)は砥石のダ
イヤモンド砥粒による研削工程、(b)は電気泳動法に
よる半固定砥粒層形成工程、(c)は半固定砥粒層によ
る研磨工程をそれぞれ示す。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is an explanatory view schematically showing basic steps of a polishing method according to the present invention, wherein (a) is a grinding step using diamond abrasive grains of a grindstone, and (b) is an electrophoresis method. A semi-fixed abrasive layer forming step, and (c) shows a polishing step using the semi-fixed abrasive layer.
【0020】図1(a)に示す研削工程においては、砥
石の砥粒層Tのダイヤモンド砥粒Dにより、被加工物K
の表面を研削する。被加工物Kは加工機械(図示せず)
上に取り付けられた研磨液タンク(図示せず)内に固定
され、タンク内には後工程である半固定砥粒層形成工程
および研磨工程で使用する研磨液Wが入れられている。In the grinding step shown in FIG. 1A, the workpiece K is formed by the diamond abrasive grains D of the abrasive grain layer T of the grinding stone.
Grinding surface. The workpiece K is a processing machine (not shown)
The polishing liquid W is fixed in a polishing liquid tank (not shown) mounted thereon, and contains a polishing liquid W used in a semi-fixed abrasive layer forming step and a polishing step, which are subsequent steps.
【0021】被加工物Kの表面研削が終わった後、砥石
を上昇させて被加工物Kから離し、電気泳動法により砥
石の砥粒層Tの表面に半固定砥粒層Taを形成する。同
図(b)に示す半固定砥粒層形成工程においては、研磨
液Wは純水に超微粒のシリカ砥粒SとpH調整剤(図示
せず)を加えた液とし、砥石を陽極とし研磨液Wに浸漬
した電極(図示せず)を陰極として研磨液Wに通電する
と、負に帯電したシリカ砥粒Sが陽極である砥石に向か
って移動し、砥石の砥粒層Tの表面と被加工物Kの間に
凝集して粘稠な流動物となり、半固定砥粒層Taが形成
される。After the surface grinding of the workpiece K is completed, the grindstone is raised and separated from the workpiece K, and a semi-fixed abrasive layer Ta is formed on the surface of the abrasive grain layer T of the grindstone by electrophoresis. In the semi-fixed abrasive grain layer forming step shown in FIG. 3B, the polishing liquid W is a liquid obtained by adding ultrafine silica abrasive grains S and a pH adjuster (not shown) to pure water, and the grindstone is used as an anode. When an electrode (not shown) immersed in the polishing liquid W is used as a cathode and electricity is supplied to the polishing liquid W, the negatively charged silica abrasive grains S move toward the grindstone serving as the anode, and the surface of the abrasive grain layer T of the grindstone is moved. The viscous fluid is aggregated between the workpieces K to form a semi-fixed abrasive grain layer Ta.
【0022】半固定砥粒層Taの形成が終わった後、砥
石を下降させて被加工物Kとの隙間が10〜100μm
程度となるように保持し、この状態で砥石を回転させて
半固定砥粒層Taにより被加工物Kの表面を研磨する。
同図(c)に示す研磨工程においては、被加工物Kは最
初の研削工程のときと同じ位置で固定され、研磨液Wに
通電した状態で被加工物Kの表面を研磨する。研磨液W
としてCMP加工に適した組成の媒液および超微粒子砥
粒を用いることにより、この研磨工程をCMP加工工程
とすることもできる。After the formation of the semi-fixed abrasive layer Ta, the grindstone is lowered so that the gap with the workpiece K is 10 to 100 μm.
The surface of the workpiece K is polished with the semi-fixed abrasive layer Ta by rotating the grindstone in this state.
In the polishing step shown in FIG. 5C, the workpiece K is fixed at the same position as that in the first grinding step, and the surface of the workpiece K is polished while the polishing liquid W is energized. Polishing liquid W
By using a medium solution and ultrafine abrasive particles having a composition suitable for CMP processing, the polishing step can be a CMP processing step.
【0023】一つの被加工物Kの表面研磨が終わった
後、別の被加工物の表面研削に移る場合は、研磨液Wへ
の通電を止め、図1の(a)〜(b)の工程を繰り返
す。電気泳動法による半固定砥粒層Taの形成は可逆性
であり、研磨液Wへの通電の有無により半固定砥粒層T
aの形成と除去が可能であるので、被加工物Kの表面研
磨が終わった後、研磨液Wへの通電を停止すれば、砥石
と被加工物Kとの間に形成された半固定砥粒層Ta中の
シリカ砥粒Sは研磨液Wに分散した状態となる。When the surface grinding of one workpiece K is completed and the process proceeds to the surface grinding of another workpiece, the power supply to the polishing liquid W is stopped, and the polishing liquid W shown in FIGS. Repeat the process. The formation of the semi-fixed abrasive layer Ta by electrophoresis is reversible, and depends on whether or not the polishing liquid W is energized.
Since the formation and removal of a can be performed, if the power supply to the polishing liquid W is stopped after the surface polishing of the workpiece K is completed, the semi-fixed abrasive formed between the grindstone and the workpiece K is removed. The silica abrasive grains S in the grain layer Ta are in a state of being dispersed in the polishing liquid W.
【0024】このようにして被加工物Kの表面研削から
研磨までの一連の加工工程を同一加工機械のもとで行う
ことにより、被加工物Kは加工の始めから最後まで加工
機械から取り外すことなく、かつ同一基準面保持の状態
のもとで加工を続けることができるので、高能率、高精
度の加工を達成することができる。In this way, by performing a series of processing steps from surface grinding to polishing of the workpiece K under the same processing machine, the workpiece K can be removed from the processing machine from the beginning to the end of the processing. In addition, the machining can be continued under the condition of maintaining the same reference plane, so that high-efficiency and high-accuracy machining can be achieved.
【0025】つぎに、実験例に基づき本発明をさらに詳
しく説明する。図2は実験に使用した加工装置の要部の
構成を示す図であり、説明の便のために図の右半分を断
面図で示している。図2において、1は加工機械である
縦軸マシニングセンターの主軸、2は主軸1と砥石3の
間を絶縁する絶縁ジグ、3は絶縁ジグ2を介して主軸1
に取り付けた砥石、4は台座5に取り付けた被加工物、
6は電極、7はOリング、8は研磨液タンクの底板、9
は研磨液中のシリカ砥粒を示す。なお、砥石3の砥粒層
3aと被加工物4の隙間およびシリカ砥粒9は拡大して
示している。Next, the present invention will be described in more detail based on experimental examples. FIG. 2 is a view showing a configuration of a main part of the processing apparatus used in the experiment, and a right half of the figure is shown in a sectional view for convenience of explanation. In FIG. 2, reference numeral 1 denotes a main shaft of a vertical machining center, which is a processing machine; 2, an insulating jig for insulating between the main shaft 1 and the grinding wheel 3;
A grinding wheel attached to the pedestal 4, a workpiece 4 attached to the pedestal 5,
6 is an electrode, 7 is an O-ring, 8 is a bottom plate of a polishing liquid tank, 9
Indicates silica abrasive grains in the polishing liquid. The gap between the abrasive layer 3a of the grindstone 3 and the workpiece 4 and the silica abrasive 9 are shown in an enlarged manner.
【0026】砥石3は、微粒のダイヤモンド砥粒とニッ
ケル系ボンドからなる砥粒層3aを備えた外径30mm
の砥石である。被加工物4は、磁気ディスク用非晶質ガ
ラスを30mm×16mmに予備成形したものである。
研磨液は、pH7の純水に平均粒径が17nmのシリカ
砥粒9を40重量%混入し、シリカ砥粒9の凝集状態を
調整するための塩とpH調整剤を添加したものである。The grindstone 3 is provided with an abrasive layer 3a composed of fine diamond abrasive grains and a nickel-based bond.
It is a whetstone. The workpiece 4 is obtained by preforming amorphous glass for a magnetic disk into a size of 30 mm × 16 mm.
The polishing liquid is obtained by mixing 40% by weight of silica abrasive grains 9 having an average particle diameter of 17 nm with pure water of pH 7, and adding a salt and a pH adjuster for adjusting the aggregation state of the silica abrasive grains 9.
【0027】〔実験例1〕研磨液のpH、および研磨液
に投入する塩の種類を変えて、電気泳動により砥石3の
砥粒層3aと被加工物4の間に凝集するシリカ砥粒9の
結合度への影響を調査した。実験条件としては、主軸1
の回転速度は500min-1、送り速度は400mm/
min、電極への印可電圧は10V、砥石3の砥粒層3
aと被加工物4との隙間は10μmである。EXPERIMENTAL EXAMPLE 1 The pH of the polishing solution and the type of salt to be added to the polishing solution were changed, and the silica abrasive particles 9 aggregated between the abrasive layer 3a of the grinding wheel 3 and the workpiece 4 by electrophoresis. The effect on the degree of bonding was investigated. The experimental conditions were spindle 1
Has a rotation speed of 500 min -1 and a feed speed of 400 mm /
min, the applied voltage to the electrode is 10 V, the abrasive layer 3 of the grindstone 3
The gap between a and the workpiece 4 is 10 μm.
【0028】図3はpHと研磨力の関係を研磨液に投入
した塩の種類別に示す。塩としてはNa2CO3、NaH
CO3、NaClを使用し、pH調整剤としてはKOH
とHClを使用した。研磨力は砥石3を回転させて研磨
しているときの砥石3の接線方向の抵抗力を接線研磨力
として表している。この接線研磨力が大きいほど、半固
定砥粒層の研磨力が大きいと判定される。FIG. 3 shows the relationship between the pH and the polishing power for each type of salt charged into the polishing liquid. Na 2 CO 3 , NaH
CO 3 and NaCl are used, and KOH is used as a pH adjuster.
And HCl were used. As the polishing force, the tangential resistance of the grindstone 3 when the grindstone 3 is rotated and polished is expressed as a tangential polishing force. It is determined that the greater the tangential polishing force, the greater the polishing force of the semi-fixed abrasive layer.
【0029】図3からわかるように、いずれの塩の場合
も研磨液のpHが特定の範囲の間で接線研磨力が急増
し、塩の添加とpHの調整により半固定砥粒層の超微粒
砥粒の結合度を向上させ、研磨力を高めることができる
ことを確認できた。また、接線研磨力が最大となるpH
範囲は強酸性側でも強アルカリ性側でもないので、従来
のCMP加工時における廃液処理の問題や機械工具の腐
食の問題が軽減される。As can be seen from FIG. 3, in any of the salts, the tangential polishing force sharply increases when the pH of the polishing liquid is in a specific range, and the ultrafine particles of the semi-fixed abrasive layer are formed by adding the salt and adjusting the pH. It was confirmed that the degree of bonding of the abrasive grains could be improved and the polishing power could be increased. In addition, the pH at which the tangential polishing force is maximized
Since the range is neither the strongly acidic side nor the strongly alkaline side, the problem of waste liquid treatment and the problem of corrosion of machine tools during conventional CMP processing are reduced.
【0030】〔実験例2〕図4は研磨液への塩の投入の
有無と研磨力の関係を示す。塩としてNaClを使用
し、pH調整剤としてHClを使用してpH9とし、電
極への印可電圧を10V、砥石3の砥粒層3aと被加工
物4の隙間を100μmとした。[Experimental Example 2] FIG. 4 shows the relationship between the presence or absence of the addition of salt to the polishing liquid and the polishing power. The pH was set to 9 using NaCl as a salt and HCl as a pH adjuster, the voltage applied to the electrode was 10 V, and the gap between the abrasive layer 3 a of the grindstone 3 and the workpiece 4 was 100 μm.
【0031】図4からわかるように、NaClの投入の
ない場合は接線研磨力が10N程度で推移するが、Na
Clを投入してpHを調節した場合は30N以上の研磨
力が継続し、pH調節による半固定砥粒層の結合度の向
上を確認できた。As can be seen from FIG. 4, the tangential polishing force changes at about 10 N when NaCl is not introduced.
When the pH was adjusted by adding Cl, the polishing power of 30 N or more continued, and it was confirmed that the degree of bonding of the semi-fixed abrasive layer was improved by the pH adjustment.
【0032】〔実験例3〕図5は本発明の方法にしたが
って研磨を長時間実施した場合の加工精度の向上効果を
示す。砥石のダイヤモンド砥粒として#400の砥粒
(SD400)と#1500の砥粒(SD1500)を
使用し、懸濁液のpHを9.7、砥石3の砥粒層3aと
被加工物4の隙間を100μm、接線研磨力を40Nに
設定した条件のもとで、それぞれの砥石を用いて同じ被
加工物を連続研磨した。Experimental Example 3 FIG. 5 shows the effect of improving the processing accuracy when polishing is performed for a long time according to the method of the present invention. The abrasive grains of # 400 (SD400) and # 1500 (SD1500) are used as the diamond abrasive grains of the grindstone, the pH of the suspension is 9.7, and the abrasive layer 3a of the grindstone 3 and the workpiece 4 Under the conditions that the gap was set to 100 μm and the tangential polishing force was set to 40 N, the same workpiece was continuously polished using each grindstone.
【0033】図5からわかるように、いずれの砥石の場
合も、研磨時間の経過とともに被加工物の表面粗さが小
さくなり、SD400の場合、30分後に表面粗さRy
100nm、SD1500の場合、20分後に表面粗さ
Ry20nmの良好な加工品位が得られた。As can be seen from FIG. 5, in any of the whetstones, the surface roughness of the workpiece decreases as the polishing time elapses, and in the case of SD400, the surface roughness Ry after 30 minutes.
In the case of 100 nm and SD1500, a good processed grade with a surface roughness Ry of 20 nm was obtained after 20 minutes.
【0034】[0034]
【発明の効果】本発明によって以下の効果を奏すること
ができる。According to the present invention, the following effects can be obtained.
【0035】(1)電気泳動現象を用いた電気泳動研磨
において、超微粒砥粒を懸濁させた懸濁液に塩を添加す
ることにより、凝集する超微粒砥粒の結合度を調節する
ことが可能となり、電気泳動研磨時の研磨力を従来の研
磨液の場合よりも大幅に高めることができる。また、塩
の添加に加えてpH調整剤を添加することにより、塩の
添加による研磨力の向上を最大限に発揮することができ
る。この研磨液を用いて電気泳動研磨を行うことによ
り、研磨能率を高めることができる。(1) In electrophoretic polishing using the electrophoretic phenomenon, by adding a salt to a suspension in which ultrafine abrasive grains are suspended, the bonding degree of the aggregated ultrafine abrasive grains is adjusted. The polishing force during electrophoretic polishing can be greatly increased as compared with the conventional polishing liquid. Further, by adding the pH adjuster in addition to the addition of the salt, it is possible to maximize the polishing power by the addition of the salt. By performing electrophoretic polishing using this polishing liquid, polishing efficiency can be improved.
【0036】(2)被加工物に対して砥石により表面研
削加工を行った後、砥石の作用面に超微粒砥粒を電気泳
動法により凝集させて半固定砥粒層を形成し、同一加工
機械、同一基準面保持のもとで被加工物に対して半固定
砥粒層により表面研磨加工を行うことによって、一連の
加工工程を同一加工機械のもとで行うことができる。こ
れにより、被加工物は加工の始めから最後まで加工機械
から取り外すことなく、同一基準面を保持した状態のも
とで加工を続けることができるので、高能率、高精度の
加工を達成することができる。とくに電気泳動研磨用研
磨液として、超微粒砥粒を懸濁させた懸濁液に塩を添加
した研磨液、または塩とともにpH調節剤を添加した研
磨液を用いることにより、前述したように研磨力を高め
ることができるので、研磨能率をさらに高めることがで
きる。(2) After subjecting the workpiece to surface grinding with a grindstone, ultrafine abrasive grains are agglomerated by electrophoresis on the working surface of the grindstone to form a semi-fixed abrasive layer, and the same machining is performed. By performing surface polishing on a workpiece with a semi-fixed abrasive layer while maintaining the same reference plane with a machine, a series of processing steps can be performed under the same processing machine. As a result, the workpiece can be processed from the beginning to the end of the process without removing it from the processing machine while maintaining the same reference surface, achieving high efficiency and high precision processing. Can be. Particularly, by using a polishing liquid in which a salt is added to a suspension in which ultrafine abrasive grains are suspended or a polishing liquid in which a pH adjuster is added together with salt as a polishing liquid for electrophoretic polishing, the polishing is performed as described above. Since the power can be increased, the polishing efficiency can be further increased.
【図1】 本発明の研磨加工方法の基本工程を模式的に
示す説明図であり、(a)は砥石のダイヤモンド砥粒に
よる研削工程、(b)は電気泳動法による半固定砥粒層
形成工程、(c)は半固定砥粒層による研磨工程をそれ
ぞれ示す。FIG. 1 is an explanatory view schematically showing basic steps of a polishing method of the present invention, wherein (a) is a grinding step using diamond abrasive grains of a grindstone, and (b) is a semi-fixed abrasive layer formation by an electrophoresis method. Step (c) shows a polishing step using a semi-fixed abrasive layer.
【図2】 実験に使用した加工装置の要部の構成を示す
図である。FIG. 2 is a diagram showing a configuration of a main part of a processing apparatus used in an experiment.
【図3】 実験結果を示すグラフである。FIG. 3 is a graph showing experimental results.
【図4】 実験結果を示すグラフである。FIG. 4 is a graph showing experimental results.
【図5】 実験結果を示すグラフである。FIG. 5 is a graph showing experimental results.
1 加工機械の主軸 2 絶縁ジグ 3 砥石 3a 砥粒層 4 被加工物 5 台座 6 電極 7 Oリング 8 研磨液タンクの底板 9 シリカ砥粒 T 砥粒層 D ダイヤモンド砥粒 K 被加工物 W 研磨液 S シリカ砥粒 Ta 半固定砥粒層 DESCRIPTION OF SYMBOLS 1 Main shaft of processing machine 2 Insulating jig 3 Whetstone 3a Abrasive layer 4 Workpiece 5 Pedestal 6 Electrode 7 O ring 8 Bottom plate of polishing liquid tank 9 Silica abrasive grain T Abrasive layer D Diamond abrasive grain K Workpiece W Polishing liquid S silica abrasive grain Ta semi-fixed abrasive layer
───────────────────────────────────────────────────── フロントページの続き (72)発明者 竹内 恵三 愛知県津島市神守町字二ノ割16番地の1 ノリタケダイヤ株式会社名古屋工場内 Fターム(参考) 3C058 AA07 AC04 CA05 CB01 CB03 DA12 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Keizo Takeuchi 1 Noritake Daiza Co., Ltd. Nagoya Plant, No. 16 at Ninowari, Tsushima City, Aichi Prefecture F term (reference) 3C058 AA07 AC04 CA05 CB01 CB03 DA12
Claims (7)
研磨用研磨液であって、超微粒砥粒を懸濁させた懸濁液
に塩を添加したことを特徴とする電気泳動研磨用研磨
液。1. An electrophoretic polishing polishing liquid in which ultrafine abrasive grains are suspended in a medium, wherein a salt is added to a suspension in which the ultrafine abrasive grains are suspended. Polishing solution for electrophoretic polishing.
加した請求項1記載の電気泳動研磨用研磨液。2. The polishing liquid for electrophoretic polishing according to claim 1, wherein a pH adjuster is added to the suspension together with a salt.
塩を添加した研磨液を用いて電気泳動法により砥石の作
用面に超微粒砥粒を凝集させながら被加工物の表面研磨
加工を行うことを特徴とする研磨加工方法。3. An object to be processed while agglomerating the ultrafine abrasive particles on the working surface of the grindstone by electrophoresis using a polishing liquid in which a salt is added to a suspension in which ultrafine abrasive particles are suspended in a medium solution. A polishing method characterized by performing a surface polishing process.
加した研磨液を用いる請求項3記載の研磨加工方法。4. The polishing method according to claim 3, wherein a polishing liquid in which a pH adjuster is added to the suspension together with a salt is used.
工を行った後、前記砥石の作用面に超微粒砥粒を電気泳
動法により凝集させて半固定砥粒層を形成し、同一加工
機械、同一基準面保持のもとで被加工物に対して前記半
固定砥粒層により表面研磨加工を行うことを特徴とする
研磨加工方法。5. After a surface grinding process is performed on a workpiece with a grindstone, ultrafine abrasive grains are agglomerated by electrophoresis on the working surface of the grindstone to form a semi-fixed abrasive layer, and the same processing is performed. A polishing method comprising: performing a surface polishing process on a workpiece with the semi-fixed abrasive layer while maintaining the same reference plane with a machine.
行うときの研磨液として、超微粒砥粒を懸濁させた懸濁
液に塩を添加した研磨液を用いる請求項5記載の研磨加
工方法。6. The polishing method according to claim 5, wherein a polishing liquid obtained by adding a salt to a suspension in which ultrafine abrasive grains are suspended is used as a polishing liquid when performing surface polishing with the semi-fixed abrasive layer. Processing method.
加した研磨液を用いる請求項6載の研磨加工方法。7. The polishing method according to claim 6, wherein a polishing liquid in which a pH adjuster is added to the suspension together with a salt is used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000274009A JP2002086350A (en) | 2000-09-08 | 2000-09-08 | Polishing fluid for electrophoretic polishing and polishing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000274009A JP2002086350A (en) | 2000-09-08 | 2000-09-08 | Polishing fluid for electrophoretic polishing and polishing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002086350A true JP2002086350A (en) | 2002-03-26 |
Family
ID=18759846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000274009A Pending JP2002086350A (en) | 2000-09-08 | 2000-09-08 | Polishing fluid for electrophoretic polishing and polishing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002086350A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104974714A (en) * | 2014-04-03 | 2015-10-14 | 昭和电工株式会社 | Polishing composition and method for polishing substrate using the same |
| KR20170073678A (en) | 2014-10-28 | 2017-06-28 | 반도 카가쿠 가부시키가이샤 | Polishing material and process for producing polishing material |
| KR20180087350A (en) | 2016-01-08 | 2018-08-01 | 반도 카가쿠 가부시키가이샤 | Abrasive |
| CN109732471A (en) * | 2017-10-31 | 2019-05-10 | 湖南大学 | A chemical-mechanical-mechanochemical synergistic micro-grinding processing method and composite abrasive micro-grinding tool |
-
2000
- 2000-09-08 JP JP2000274009A patent/JP2002086350A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104974714A (en) * | 2014-04-03 | 2015-10-14 | 昭和电工株式会社 | Polishing composition and method for polishing substrate using the same |
| JP2015196826A (en) * | 2014-04-03 | 2015-11-09 | 昭和電工株式会社 | Polishing composition, and method for polishing substrate using the polishing composition |
| KR20170073678A (en) | 2014-10-28 | 2017-06-28 | 반도 카가쿠 가부시키가이샤 | Polishing material and process for producing polishing material |
| US10456888B2 (en) | 2014-10-28 | 2019-10-29 | Bando Chemical Industries, Ltd. | Abrasive material and production method of abrasive material |
| KR20180087350A (en) | 2016-01-08 | 2018-08-01 | 반도 카가쿠 가부시키가이샤 | Abrasive |
| CN109732471A (en) * | 2017-10-31 | 2019-05-10 | 湖南大学 | A chemical-mechanical-mechanochemical synergistic micro-grinding processing method and composite abrasive micro-grinding tool |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6113464A (en) | Method for mirror surface grinding and grinding wheel therefore | |
| JP3098661B2 (en) | Abrasive composition and polishing method using the same | |
| CN1929955B (en) | Insulating pad conditioner and method of use | |
| Kakinuma et al. | Ultra-precision grinding of optical glass lenses with La-doped CeO2 slurry | |
| US6117001A (en) | Electrolytic in-process dressing method, electrolytic in-process dressing apparatus and grindstone | |
| US6489243B2 (en) | Method for polishing semiconductor device | |
| JP4104199B2 (en) | Molded mirror grinding machine | |
| JP2002086350A (en) | Polishing fluid for electrophoretic polishing and polishing method | |
| EP1877216B1 (en) | Method of electrolytically microfinishing a metallic workpiece | |
| JP3802884B2 (en) | CMP conditioner | |
| JP2565385B2 (en) | Combined processing method and apparatus of electrolytic dressing grinding method and polishing method using conductive whetstone as tool | |
| JPS6294224A (en) | Surface processing method for aluminium | |
| JP3251610B2 (en) | Mirror polishing method and apparatus using electrolytic products | |
| JPH01188266A (en) | Grinding equipment | |
| US20260001191A1 (en) | Enhanced silicon grind using chemical additives in fluid during grinding process | |
| JP2010250893A (en) | Manufacturing method of magnetic disk glass substrate, and surface correction method of bonded abrasive tool | |
| JP3906165B2 (en) | Cutting edge polishing method using electric abrasive grains, and manufacturing method of fine parts having cutting edge | |
| JPH10249714A (en) | Polishing apparatus and method, magnetic head and magnetic recording / reproducing apparatus | |
| JP3169631B2 (en) | Method and apparatus for electrolytic dressing with semiconductor contact electrode | |
| JP2003071716A (en) | Method and device for working brittle material work | |
| JP2003260642A (en) | Mirror surface grinding method and apparatus | |
| WO2023238608A1 (en) | Surface treatment method | |
| JP2002127011A (en) | CMP conditioner | |
| JP2717438B2 (en) | Method and apparatus for truing and dressing conductive grindstone by electrolytic dressing grinding | |
| JPH04275874A (en) | Double face lap grinding method used with electrolytic dressing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20040106 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040213 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20041005 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20041126 |
|
| A911 | Transfer of reconsideration by examiner before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20041201 |
|
| A912 | Removal of reconsideration by examiner before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20050218 |