JP2002076380A - Method for manufacturing thin-film solar cell module - Google Patents
Method for manufacturing thin-film solar cell moduleInfo
- Publication number
- JP2002076380A JP2002076380A JP2000252574A JP2000252574A JP2002076380A JP 2002076380 A JP2002076380 A JP 2002076380A JP 2000252574 A JP2000252574 A JP 2000252574A JP 2000252574 A JP2000252574 A JP 2000252574A JP 2002076380 A JP2002076380 A JP 2002076380A
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- Prior art keywords
- solar cell
- glass substrate
- cell module
- film
- manufacturing
- Prior art date
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
(57)【要約】
【課題】 大面積のガラス基板を切断して小型の太陽電
池モジュールを製造する際に、収率を向上できる方法を
提供する。
【解決手段】 大面積のガラス基板(1)上にストリン
グ状にスクライブされた透明電極層、光電変換半導体層
および裏面電極層を順次形成して互いに直列に接続され
た複数の太陽電池セル(2)を形成した後、ガラス基板
を切断して所定のサイズの薄膜太陽電池モジュール(1
0)を製造するにあたり、太陽電池セル(2)の膜面に
機械的なダメージを加える処理、例えばガラス基板
(1)の周縁部(1a)に形成されている膜を研磨する
縁研磨処理およびガラス基板(1)の切断を行った後に
逆バイアス処理を行う。
(57) [Problem] To provide a method capable of improving the yield when manufacturing a small-sized solar cell module by cutting a large-sized glass substrate. SOLUTION: A plurality of solar cells (2) connected in series by sequentially forming a string-shaped scribed transparent electrode layer, a photoelectric conversion semiconductor layer and a back electrode layer on a large area glass substrate (1). ) Is formed, and the glass substrate is cut to obtain a thin-film solar cell module (1) having a predetermined size.
In manufacturing 0), a process for mechanically damaging the film surface of the solar cell (2), for example, an edge polishing process for polishing a film formed on the peripheral portion (1a) of the glass substrate (1); After cutting the glass substrate (1), reverse bias processing is performed.
Description
【0001】[0001]
【発明の属する技術分野】本発明は薄膜太陽電池モジュ
ールの製造方法に関する。The present invention relates to a method for manufacturing a thin-film solar cell module.
【0002】[0002]
【従来の技術】近年、太陽電池の使用が普及しつつあ
り、それに伴って多種の寸法の太陽電池モジュールが要
求されるようになってきている。このような要求に応じ
て、大面積のガラス基板を切断して小型の太陽電池モジ
ュールを製造する方法が採用されている。2. Description of the Related Art In recent years, the use of solar cells has become widespread, and accordingly, solar cell modules of various dimensions have been required. In response to such demands, a method of manufacturing a small-sized solar cell module by cutting a large-sized glass substrate has been adopted.
【0003】この方法は、大面積のガラス基板上にスト
リング状にスクライブされた透明電極層、光電変換半導
体層および裏面電極層を順次形成して互いに直列に接続
された複数の太陽電池セルを形成した後、ガラス基板を
切断して所定の小型サイズの薄膜太陽電池モジュールを
製造するものである。According to this method, a transparent electrode layer, a photoelectric conversion semiconductor layer, and a back electrode layer scribed in a string are sequentially formed on a large-area glass substrate to form a plurality of solar cells connected in series. After that, the glass substrate is cut to manufacture a thin film solar cell module having a predetermined small size.
【0004】ところで、大面積のガラス基板上に複数の
太陽電池セルを形成したものをそのまま薄膜太陽電池モ
ジュールとして用いる方法では、太陽電池セルを形成し
た後、逆バイアス処理により短絡部を除去し、ブラスト
処理により基板周縁部の薄膜を除去(縁研磨)してい
る。その後、バスバー電極の形成、リード付け、封止、
端子箱の取り付けなどが行われる。In a method in which a plurality of solar cells are formed on a large-area glass substrate and used as it is as a thin-film solar cell module, a short-circuit portion is removed by reverse bias treatment after forming the solar cells. The thin film on the periphery of the substrate is removed (edge polishing) by blasting. After that, formation of busbar electrode, lead attachment, sealing,
Installation of a terminal box is performed.
【0005】ところが、これらの工程を、大面積のガラ
ス基板を切断して小型の太陽電池モジュールを製造する
方法にそのまま適用し、逆バイアス処理の後にブラスト
処理による縁研磨やガラス基板の切断を行うと、最大出
力の低下など太陽電池モジュールの不良率が高くなり収
率が低下することがわかってきた。However, these steps are directly applied to a method of manufacturing a small-sized solar cell module by cutting a large-sized glass substrate, and after reverse biasing, edge polishing by blasting or cutting of the glass substrate is performed. It has been found that the failure rate of the solar cell module increases, such as a decrease in the maximum output, and the yield decreases.
【0006】[0006]
【発明が解決しようとする課題】本発明の目的は、大面
積のガラス基板を切断して小型の太陽電池モジュールを
製造する際に、収率を向上できる方法を提供することに
ある。SUMMARY OF THE INVENTION An object of the present invention is to provide a method capable of improving the yield when a large-sized glass substrate is cut to produce a small solar cell module.
【0007】[0007]
【課題を解決するための手段】本発明の薄膜太陽電池モ
ジュールの製造方法は、大面積のガラス基板上にストリ
ング状にスクライブされた透明電極層、光電変換半導体
層および裏面電極層を順次形成して互いに直列に接続さ
れた複数の太陽電池セルを形成した後、ガラス基板を切
断して所定のサイズの薄膜太陽電池モジュールを製造す
るにあたり、前記太陽電池セルの膜面に機械的なダメー
ジを加える処理を行った後に逆バイアス処理を行うこと
を特徴とする。According to a method of manufacturing a thin film solar cell module of the present invention, a transparent electrode layer, a photoelectric conversion semiconductor layer, and a back electrode layer scribed in a string are sequentially formed on a large-area glass substrate. After forming a plurality of solar cells connected in series with each other by cutting, the glass substrate is cut to produce a thin film solar cell module of a predetermined size, and mechanical damage is applied to the film surface of the solar cell. A reverse bias process is performed after the process.
【0008】本発明において、太陽電池セルの膜面に機
械的なダメージを加える処理としては、ガラス基板の切
断(カットライン入れおよび折り割り)もしくはその後
の水中での面取り(水切り工程を含む)、またはガラス
基板の周縁部に形成されている膜を研磨する縁研磨処理
(研磨剤の除去工程を含む)が挙げられる。In the present invention, as a treatment for mechanically damaging the film surface of the solar cell, cutting (cutting and cutting) or subsequent chamfering in water (including a draining step) of the glass substrate, Alternatively, edge polishing treatment (including a polishing agent removing step) for polishing a film formed on a peripheral portion of a glass substrate can be given.
【0009】本発明の薄膜太陽電池モジュールの製造方
法では、ガラス基板の周縁部に形成されている膜を研磨
する縁研磨処理(研磨剤の除去工程を含む)、およびガ
ラス基板の切断(カットライン入れおよび折り割り)と
水中での面取り(水切り工程を含む)を行った後に逆バ
イアス処理を行うことが好ましい。In the method of manufacturing a thin-film solar cell module according to the present invention, an edge polishing process (including a step of removing an abrasive) for polishing a film formed on a peripheral portion of a glass substrate, and a cutting (cutting line) of the glass substrate are performed. It is preferable to perform reverse bias treatment after performing undercutting and folding) and chamfering in water (including a draining step).
【0010】本発明において、縁研磨処理は、ダイアモ
ンド刃などを回転させてグラインディングするか、また
はブラスト処理によって行われる。In the present invention, the edge polishing process is performed by rotating a diamond blade or the like for grinding or by blasting.
【0011】本発明において、逆バイアス処理は、1ス
トリングあたり0.2〜20Vの逆方向電圧を10秒以
内の時間印加する操作を複数回行うことが好ましい。こ
の場合、逆方向電圧は交流電圧でもよいし、直流電圧で
もよい。In the present invention, in the reverse bias treatment, it is preferable to perform a plurality of operations of applying a reverse voltage of 0.2 to 20 V per string for a period of 10 seconds or less. In this case, the reverse voltage may be an AC voltage or a DC voltage.
【0012】[0012]
【発明の実施の形態】本発明者らは、大面積のガラス基
板を切断して小型の太陽電池モジュールを製造する際
に、形成された太陽電池セルに対して逆バイアス処理を
施した後に、ブラスト処理による縁研磨やガラス基板の
切断を行うと、太陽電池モジュールの不良率が上昇する
原因について検討した結果、以下のような結論に達し
た。BEST MODE FOR CARRYING OUT THE INVENTION The present inventors, when manufacturing a small solar cell module by cutting a glass substrate having a large area, after applying a reverse bias treatment to the formed solar cell, As a result of examining the cause of an increase in the failure rate of the solar cell module when the edge is polished by blasting or the glass substrate is cut, the following conclusions have been reached.
【0013】逆バイアス処理は、太陽電池セルに生じた
短絡部に大電流を流して、短絡部を飛散させたり変質さ
せたりすることにより電気特性を回復させる処理であ
る。この処理により生じた短絡部の変質物質は、太陽電
池セルの表面でささくれ立った状態で残存していると考
えられる。この状態で、太陽電池セルの膜面に機械的な
ダメージを加える処理がなされると、変質物質が再びリ
ーク個所に押し込まれて、回復した電気特性が再度低下
すると推定される。The reverse bias process is a process in which a large current is applied to a short-circuit portion generated in a solar battery cell to scatter or alter the short-circuit portion to restore electrical characteristics. It is considered that the altered substance in the short-circuited portion generated by this treatment remains in a state of being raised on the surface of the solar cell. In this state, if a process of mechanically damaging the film surface of the solar battery cell is performed, it is estimated that the altered substance is pushed into the leak location again, and the restored electrical characteristics deteriorate again.
【0014】例えば、ガラス基板を切断(カットライン
入れおよび折り割り)して小型太陽電池モジュールを切
り出した場合、水中においてモジュールの4辺をグライ
ンディングして面取りを行うが、この工程ではモジュー
ルを固定するためにセル面にゴムベルトが押し付けられ
る。また、その後に水切りを行う際にモジュールのセル
面にニップロールが接触する。このようにセル面に圧力
が加わる工程を逆バイアス処理後に行うと、上述したよ
うに逆バイアス処理により生じた変質物質が再びリーク
個所に押し込まれて、回復した電気特性が再度低下す
る。また、逆バイアス処理後にブラスト処理により縁研
磨した後、研磨剤を除去する工程を行うと、モジュール
のセル面が研磨剤によるダメージを受け、やはり変質物
質が押し込まれて回復した電気特性が再度低下する。し
かも、変質物質の押し込みによる電気特性の低下への影
響は、大型の太陽電池モジュールよりも小型の太陽電池
モジュールでより顕著に表れると推定される。[0014] For example, when a small solar cell module is cut out by cutting (cutting and breaking) a glass substrate, the four sides of the module are ground in water and chamfered. In this step, the module is fixed. To do this, a rubber belt is pressed against the cell surface. In addition, the nip roll comes into contact with the cell surface of the module when draining is performed thereafter. If the step of applying pressure to the cell surface is performed after the reverse bias treatment, the altered substance generated by the reverse bias treatment is pushed again into the leak location as described above, and the restored electrical characteristics deteriorate again. In addition, when the edge is polished by blasting after the reverse bias treatment and the polishing step is performed, the cell surface of the module is damaged by the abrasive, and the deteriorated substance is pushed in again, and the restored electrical characteristics deteriorate again. I do. Moreover, it is estimated that the influence of the intrusion of the altered substance on the deterioration of the electric characteristics is more remarkable in a small solar cell module than in a large solar cell module.
【0015】これに対して、本発明の方法では、透明電
極層、光電変換半導体層および裏面電極層が積層された
太陽電池セルの膜面に機械的なダメージを加える工程の
後に逆バイアス処理を行うので、逆バイアス処理により
生じた変質物質の押し込みによる電気特性の低下を避け
ることができる。On the other hand, in the method of the present invention, reverse bias treatment is performed after the step of mechanically damaging the film surface of the solar cell on which the transparent electrode layer, the photoelectric conversion semiconductor layer, and the back electrode layer are laminated. Therefore, it is possible to prevent the deterioration of the electric characteristics due to the intrusion of the altered substance caused by the reverse bias treatment.
【0016】本発明では、成膜およびスクライブによる
太陽電池セルの形成、縁研磨、ガラス基板の切断、逆バ
イアス処理、バスバー電極の形成、リード付け、封止、
端子箱の取り付けという順序で薄膜太陽電池モジュール
を製造することが好ましい。なお、逆バイアス処理後に
も上述した変質物質が原因となる電気特性の低下を避け
るために、逆バイアス処理後に洗浄して変質物質を除去
し、かつその後の工程で太陽電池セルのセル面に極力圧
力を加えないようにすることが好ましい。In the present invention, formation of a solar cell by film formation and scribing, edge polishing, cutting of a glass substrate, reverse bias treatment, formation of a bus bar electrode, lead attachment, sealing,
It is preferable to manufacture the thin-film solar cell module in the order of mounting the terminal box. After the reverse bias treatment, in order to avoid the deterioration of the electric characteristics caused by the above-mentioned deteriorated material, washing is performed after the reverse bias treatment to remove the deteriorated material, and the cell surface of the solar cell is minimized in the subsequent process. Preferably, no pressure is applied.
【0017】[0017]
【実施例】以下、本発明の実施例を図1を参照して説明
する。この実施例では、大面積のガラス基板を切断して
4枚の小型サイズの薄膜太陽電池モジュールを製造す
る。An embodiment of the present invention will be described below with reference to FIG. In this embodiment, a large-sized glass substrate is cut to produce four small-sized thin-film solar cell modules.
【0018】図1(A)に示すように、910mm×4
55mmの寸法を有し、SnO2からなる透明電極層が
形成されたガラス基板1を用意した。レーザー加工によ
り透明電極層をスクライブした後、洗浄した。プラズマ
CVDにより透明電極層上にアモルファスシリコン系の
光電変換層を成膜した。レーザー加工により光電変換層
をスクライブした後、洗浄した。スパッタリングにより
光電変換層上に裏面電極層を成膜した。レーザー加工に
より光電変換層および裏面電極層をスクライブした後、
洗浄した。このようにして、50段のストリング状の太
陽電池セル2を直列接続した構造を形成した(便宜上、
図においてはストリング数が実際よりも少なく図示され
ている)。As shown in FIG. 1A, 910 mm × 4
A glass substrate 1 having a size of 55 mm and having a transparent electrode layer made of SnO 2 was prepared. After scribing the transparent electrode layer by laser processing, it was washed. An amorphous silicon-based photoelectric conversion layer was formed on the transparent electrode layer by plasma CVD. After scribing the photoelectric conversion layer by laser processing, it was washed. A back electrode layer was formed on the photoelectric conversion layer by sputtering. After scribing the photoelectric conversion layer and the back electrode layer by laser processing,
Washed. In this way, a structure in which the 50-stage string-shaped solar cells 2 were connected in series was formed (for convenience,
In the figure, the number of strings is smaller than the actual number).
【0019】次に、図1(B)に示すように、レーザー
加工によりガラス基板1の長手方向で4分割するよう
に、切断部に幅10mmのスクライブ線3を設けた。Next, as shown in FIG. 1B, a scribe line 3 having a width of 10 mm was provided in the cut portion so as to be divided into four in the longitudinal direction of the glass substrate 1 by laser processing.
【0020】次に、図1(C)に示すように、サンドブ
ラストを用いて縁研磨処理を行い、ガラス基板の周縁部
1aに形成されている膜を5mm幅で研磨した後、研磨
剤を除去した。Next, as shown in FIG. 1 (C), an edge polishing process is performed using sand blast to polish the film formed on the peripheral portion 1a of the glass substrate with a width of 5 mm, and then remove the abrasive. did.
【0021】この時点で、逆バイアス処理を施し、太陽
電池セルの短絡部を除去した。この逆バイアス処理で
は、隣り合う2つのストリング間に2V,4V,8V,
2Vの逆バイアス電圧を印加する操作を全ストリングに
わたって順次行った。At this time, a reverse bias treatment was performed to remove a short-circuit portion of the solar cell. In this reverse bias processing, 2V, 4V, 8V,
The operation of applying a reverse bias voltage of 2 V was performed sequentially over all strings.
【0022】さらに、図1(D)に示すように、ダイヤ
モンドカッターを用い、切断部のスクライブ線3の中央
でガラス基板1を切断して、4枚の小型太陽電池モジュ
ール10を作製した。次いで、それぞれの小型太陽電池
モジュール10を水中においてセル面にゴムベルトを押
し付けた状態でグラインダーにかけ、モジュールの4辺
をグラインディングして面取りした。その後、モジュー
ルのセル面にニップロールが接触した状態で水切りを行
った。Further, as shown in FIG. 1 (D), the glass substrate 1 was cut at the center of the scribe line 3 at the cut portion using a diamond cutter, and four small solar cell modules 10 were manufactured. Next, each of the small solar cell modules 10 was put on a grinder in water with a rubber belt pressed against the cell surface, and the four sides of the module were ground and chamfered. Thereafter, draining was performed with the nip roll in contact with the cell surface of the module.
【0023】再びこの時点で、逆バイアス処理を施し、
太陽電池セルの短絡部を除去した。この逆バイアス処理
でも、上記と同様に、隣り合う2つのストリング間に2
V,4V,8V,2Vの逆バイアス電圧を印加する操作
を全ストリングにわたって順次行った。At this point, reverse bias processing is performed again.
The short-circuit part of the solar cell was removed. Also in this reverse bias processing, as described above, two strings are placed between two adjacent strings.
The operation of applying reverse bias voltages of V, 4 V, 8 V, and 2 V was sequentially performed on all strings.
【0024】以上の工程を5枚のガラス基板について行
い、合計20個の小型太陽電池モジュールを作製した。The above steps were performed on five glass substrates, and a total of 20 small solar cell modules were manufactured.
【0025】上記の方法において、ブラスト処理を行う
前(ブラスト前)、ブラスト処理を行った後(ブラスト
後)、第1の逆バイアス処理を行った後(第1バイアス
処理後)、ガラス基板の切断を行った後(切断後)、お
よび第2の逆バイアス処理を行った後(第2バイアス処
理後)に、太陽電池モジュールの電気特性を評価した。
具体的には、太陽電池モジュールに対してAM1.5の
光を100mW/cm 2の光量で入射して、最大出力P
max、開放端電圧VOC、短絡電流ISC、曲線因子(F
F)を測定し、20個の太陽電池モジュールの平均値を
求めた。これらの結果を表1に示す。In the above method, blast processing is performed.
Before (before blast), after blasting (blast
After), after performing the first reverse bias processing (first bias)
After processing), after cutting the glass substrate (after cutting),
And after performing the second reverse bias processing (second bias processing).
After that, the electrical characteristics of the solar cell module were evaluated.
Specifically, AM1.5 of the solar cell module
Light 100mW / cm TwoAnd the maximum output P
max, Open-circuit voltage VOC, Short-circuit current ISC, Fill factor (F
F) and measure the average value of the 20 solar cell modules.
I asked. Table 1 shows the results.
【0026】表1から明らかなように、ブラスト処理後
およびガラス基板の切断後にバイアス処理を行うことに
より、太陽電池モジュールの電気特性が回復している。
このように、大面積のガラス基板を切断して小型の太陽
電池モジュールを製造する際には、太陽電池セルの膜面
に圧力を加える処理を行った後に逆バイアス処理を行う
ことが収率向上の点で有効であることがわかる。As is clear from Table 1, the electrical characteristics of the solar cell module are recovered by performing the biasing process after the blasting process and after the cutting of the glass substrate.
As described above, when a large-sized glass substrate is cut to manufacture a small-sized solar cell module, it is better to perform a reverse bias process after performing a process of applying pressure to the film surface of the solar cell, thereby improving the yield. It is clear that the above is effective.
【0027】[0027]
【表1】 [Table 1]
【0028】[0028]
【発明の効果】以上詳述したように本発明によれば、大
面積のガラス基板を切断して小型の太陽電池モジュール
を製造する際に、収率を向上できる方法を提供すること
にある。As described above in detail, according to the present invention, it is an object of the present invention to provide a method capable of improving the yield when a large-sized glass substrate is cut to produce a small-sized solar cell module.
【図1】本発明に係る薄膜太陽電池モジュールの製造方
法を説明するための斜視図。FIG. 1 is a perspective view for explaining a method for manufacturing a thin-film solar cell module according to the present invention.
1…ガラス基板 2…太陽電池セル 3…スクライブ線 10…太陽電池モジュール DESCRIPTION OF SYMBOLS 1 ... Glass substrate 2 ... Solar cell 3 ... Scribe line 10 ... Solar cell module
Claims (7)
スクライブされた透明電極層、光電変換半導体層および
裏面電極層を順次形成して互いに直列に接続された複数
の太陽電池セルを形成した後、ガラス基板を切断して所
定のサイズの薄膜太陽電池モジュールを製造するにあた
り、前記太陽電池セルの膜面に機械的なダメージを加え
る処理を行った後に逆バイアス処理を行うことを特徴と
する薄膜太陽電池モジュールの製造方法。1. After forming a string-shaped scribed transparent electrode layer, a photoelectric conversion semiconductor layer, and a backside electrode layer on a large-area glass substrate in order, to form a plurality of solar cells connected in series to each other. In manufacturing a thin-film solar cell module having a predetermined size by cutting a glass substrate, a reverse bias process is performed after performing a process of mechanically damaging a film surface of the solar cell. A method for manufacturing a solar cell module.
ージを加える処理が、前記ガラス基板の切断または面取
りであることを特徴とする請求項1に記載の薄膜太陽電
池モジュールの製造方法。2. The method for manufacturing a thin-film solar cell module according to claim 1, wherein the process of mechanically damaging the film surface of the solar cell is cutting or chamfering the glass substrate.
ージを加える処理が、前記ガラス基板の周縁部に形成さ
れている膜を研磨する縁研磨処理であることを特徴とす
る請求項1に記載の薄膜太陽電池モジュールの製造方
法。3. A process for mechanically damaging the film surface of the solar battery cell is an edge polishing process for polishing a film formed on a peripheral portion of the glass substrate. 3. The method for manufacturing a thin-film solar cell module according to item 1.
スクライブされた透明電極層、光電変換半導体層および
裏面電極層を順次形成して互いに直列に接続された複数
の太陽電池セルを形成した後、ガラス基板を切断して所
定のサイズの薄膜太陽電池モジュールを製造するにあた
り、前記ガラス基板の周縁部に形成されている膜を研磨
する縁研磨処理、および前記ガラス基板の切断を行った
後に逆バイアス処理を行うことを特徴とする薄膜太陽電
池モジュールの製造方法。4. After forming a string-shaped scribed transparent electrode layer, a photoelectric conversion semiconductor layer, and a backside electrode layer on a large-area glass substrate in order, to form a plurality of solar cells connected in series to each other. In manufacturing a thin-film solar cell module having a predetermined size by cutting a glass substrate, an edge polishing process of polishing a film formed on a peripheral portion of the glass substrate, and a reverse after performing the cutting of the glass substrate. A method for producing a thin-film solar cell module, comprising performing a bias treatment.
たはブラスト処理によって行うことを特徴とする請求項
3または4記載の薄膜太陽電池モジュールの製造方法。5. The method according to claim 3, wherein the edge polishing is performed by grinding or blasting.
たり0.2〜20Vの逆方向電圧を10秒以内の時間印
加する操作を複数回行う処理であることを特徴とする請
求項1ないし5のいずれかに記載の薄膜太陽電池モジュ
ールの製造方法。6. The method according to claim 1, wherein the reverse bias process is a process of performing a plurality of operations of applying a reverse voltage of 0.2 to 20 V per string for a time period of 10 seconds or less. A method for manufacturing a thin-film solar cell module according to any one of the above.
を特徴とする請求項6に記載の薄膜太陽電池モジュール
の製造方法。7. The method according to claim 6, wherein the reverse voltage is an AC voltage.
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|---|---|---|---|
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| JP4495318B2 JP4495318B2 (en) | 2010-07-07 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009020073A1 (en) * | 2007-08-06 | 2009-02-12 | Sharp Kabushiki Kaisha | Method and apparatus for manufacturing thin film photoelectric conversion module |
| JP2012104512A (en) * | 2010-11-05 | 2012-05-31 | Sharp Corp | Thin film solar cell module and method of manufacturing the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6341081A (en) * | 1986-08-07 | 1988-02-22 | Fuji Electric Co Ltd | Manufacture of thin-film semiconductor device |
| JPH11204816A (en) * | 1998-01-20 | 1999-07-30 | Kanegafuchi Chem Ind Co Ltd | Method of manufacturing semiconductor thin film photoelectric conversion device |
| JP2000188410A (en) * | 1998-12-24 | 2000-07-04 | Canon Inc | Method for manufacturing photovoltaic element |
-
2000
- 2000-08-23 JP JP2000252574A patent/JP4495318B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6341081A (en) * | 1986-08-07 | 1988-02-22 | Fuji Electric Co Ltd | Manufacture of thin-film semiconductor device |
| JPH11204816A (en) * | 1998-01-20 | 1999-07-30 | Kanegafuchi Chem Ind Co Ltd | Method of manufacturing semiconductor thin film photoelectric conversion device |
| JP2000188410A (en) * | 1998-12-24 | 2000-07-04 | Canon Inc | Method for manufacturing photovoltaic element |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009020073A1 (en) * | 2007-08-06 | 2009-02-12 | Sharp Kabushiki Kaisha | Method and apparatus for manufacturing thin film photoelectric conversion module |
| JPWO2009020073A1 (en) * | 2007-08-06 | 2010-11-04 | シャープ株式会社 | Method and apparatus for manufacturing thin film photoelectric conversion module |
| JP2012138637A (en) * | 2007-08-06 | 2012-07-19 | Sharp Corp | Method for analyzing thin film photoelectric conversion module |
| US8349623B2 (en) | 2007-08-06 | 2013-01-08 | Sharp Kabushiki Kaisha | Method and apparatus for manufacturing thin film photoelectric conversion module |
| JP2012104512A (en) * | 2010-11-05 | 2012-05-31 | Sharp Corp | Thin film solar cell module and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4495318B2 (en) | 2010-07-07 |
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