JP2002076261A - Power semiconductor module - Google Patents

Abstract

(57) [Problem] To provide a large-capacity power module using an insulating resin which has low thermal stress during manufacture, is inexpensive, has low thermal resistance, and has high reliability. A radiator plate, a plurality of first conductive layers having a thickness of 0.7 mm or more joined to the radiator plate via a resin insulating layer, and the plurality of first conductive layers are provided. The circuit 103 includes a plurality of circuit portions 107 electrically connected to each other. The circuit portion 107 is sealed with a transfer mold package, and includes a second conductive layer and a power semiconductor element connected to the second conductive layer. First conductive layer 103 bonded to heat sink 101
Is connected to the other main surface of the second conductive layer in contact with the power semiconductor element.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an internal insulation type semiconductor module, and more particularly to a power semiconductor module suitable for use as a power conversion switching element.

[0002]

2. Description of the Related Art In recent years, a power semiconductor module incorporating a switching element and an IP having a control circuit built therein have been developed.
The use of M (Intelligent Power Module) is expanding with the increase in the capacity of power switching elements such as IGBTs and the conversion of home appliances to inverters. As a result, product support in a wide range from small capacity to large capacity has been There has been a strong demand for lower prices in the capacity region.

The aforementioned power semiconductor module and IPM
Considering the large heat build-up of the mounted power semiconductor element, a heat sink made of a metal with high thermal conductivity, an insulating substrate made of a material with high thermal conductivity and high insulation, and a circuit pattern It is generally constituted by the formed conductive layer, and it is customary to select the material of the insulating substrate according to the calorific value of the mounted component.

[0004] Medium- to large-capacity products that generate a large amount of heat mainly use ceramics such as alumina ceramics and aluminum nitride ceramics, which are expensive but have high thermal conductivity, as an insulating substrate.
On the other hand, a small-capacity power semiconductor module that generates a relatively small amount of heat uses a resin insulating layer that is not very high in heat conductivity but is relatively inexpensive as an insulating substrate.

FIG. 14 is a sectional view showing a configuration example of a small-capacity power semiconductor module according to the prior art. 14, 101 is a heat sink, 102 is a resin insulating layer, 103 is a conductive layer, 104 is a power semiconductor element, 105 is a thin metal wire, 106 is a case, 108a and 108b are external terminals,
113 is a resin.

The semiconductor module shown in FIG. 14 uses aluminum as a heat sink 101 and a resin insulating layer 102 as an insulating substrate. A conductive layer 103 is provided on the resin insulating layer 102, and an IGBT 10 is formed on the conductive layer 103.
4a, power semiconductor element 104 such as diode 104b
Are joined by soldering. And the conductive layer 10
3 is connected by a thin metal wire 105, and further, a wiring for a power external terminal 108 a and a signal external terminal 108 b is provided and housed in a case 106.
3 is sealed. Here, the resin is a synthetic resin, so-called plastic. Heat sink 1
01, the insulating resin 102, and the conductive layer 103 are referred to as an insulating metal substrate 1101. The thickness of the conductive layer 103 is 0.1.
It is about 3 mm.

In the power semiconductor module according to the prior art described above, the heat conductivity of the resin is small. Therefore, when the power semiconductor module is applied to a medium- to large-capacity power semiconductor module that generates a large amount of heat, heat radiation of the power semiconductor element is insufficient. Become,
It becomes difficult to maintain the allowable temperature, and in some cases, an operation failure occurs.

Therefore, when an insulating substrate made of an insulating resin layer is applied to a power semiconductor having a medium capacity to a large capacity, heat dissipation of the power semiconductor element becomes a problem.

As one of means for reducing the cost of a power semiconductor module, a method of manufacturing a package by transfer molding in the same manner as an IC package is described in, for example, Japanese Patent Publication No. 6-80748. Have been.

FIG. 15 is a diagram showing an example of a transfer-molded power semiconductor module according to the prior art. This module 1201 has a three-phase inverter module (not shown) composed of Darlington-connected bipolar transistors. Have been.

FIG. 16 is a view for explaining a power semiconductor module according to the prior art constituted by using transfer-molded individual power semiconductor elements. In FIG. 16, 111 is a bottom entry connector, 112 is a module mounting hole, 1301 and 1302 are one-chip packages, 1303 is a three-terminal regulator, and 1304 is a shunt resistor.

An advantage of using a transfer-molded individual power semiconductor element as shown in FIG. 16 with respect to a case where a bare chip is mounted is that a transfer molding is used to solder the power semiconductor element to a lead frame. It is to improve the life of the junction and the junction between the power semiconductor and the thin metal wire. In addition, the power semiconductor element cannot conduct a current equivalent to the rating unless it is connected to an external terminal with solder or a thin metal wire, so that it is difficult to perform selection in a chip state. Power semiconductor modules with a large number of bare chips mounted are:
The selection of the power semiconductor elements can be performed only after the soldering of the power semiconductor elements and the connection of the fine metal wires. As a result, if there is at least one defective chip among the mounted chips, the entire power semiconductor module becomes defective.

On the other hand, transfer-molded individual power semiconductor elements can be sorted out in advance.
Only non-defective devices can be mounted on the power semiconductor module, which is economical. The power semiconductor module shown in FIG. 16 is a three-phase inverter module similarly to the case of FIG. 15, and uses a one-chip package 1301 of a bipolar transistor and a one-chip package 1302 of a flywheel diode. These packages are soldered to a conductive layer (copper wiring) on an insulating metal substrate. In the example shown in FIG. 16, the copper wiring is omitted. The thickness of the conductive layer is about 0.3 mm at the maximum, and is joined to the heat sink via an insulating resin. The input of the control signal and the extraction of the main current are performed via a bottom entry connector 111 arranged at the center of the module. In this module, a three-terminal regulator 1303 and a shunt resistor 1304 are also mounted. Further, as shown in FIG. 15, a module mounting hole 112 for fastening the module to the fin is formed in the insulated metal substrate. As shown in FIG. Thermal stress increases due to the difference in expansion coefficient. For example, when the power semiconductor module shown in FIG. 14 is transfer-molded,
Since it is heated to 200 ° C. or higher during transfer molding, thermal stress is generated due to a difference in thermal expansion coefficient between the heat sink and the resin during cooling. If the thermal stress is large, cracks may occur in the resin, which may cause problems in insulation and airtightness. The thermal stress increases as the size of the package increases. That is, as the capacity of the power semiconductor module increases, the power semiconductor module increases. Further, if the entire power semiconductor module is sealed by transfer molding, repair cannot be performed. If even one power semiconductor element in the power semiconductor module fails, the entire module fails. In addition, it is necessary to produce a transfer mold for each capacitor and each circuit, and thus lacks versatility.

On the other hand, the module shown in FIG.
As compared with the power semiconductor module shown in (1), the package size becomes larger. This is because
When individual power semiconductor elements are used, a complicated wiring is required in a three-phase module using a large number of elements, and the package area becomes larger than the entire power semiconductor element area. . In other words, modules using individual power semiconductor modules that are transfer-molded,
The area efficiency is inferior.

As a method of solving these problems and utilizing transfer mold, PCT / JP96 / 02
No. 541 is known.

FIG. 17 is a diagram showing the configuration of the power semiconductor module proposed in the above-mentioned application, and FIG. 18 is a circuit diagram of the power semiconductor module shown in FIG. 17, reference numeral 1401 denotes a circuit portion, 1402 denotes a signal circuit wiring portion, 1403 denotes a power circuit wiring portion, and other reference numerals are the same as those in FIG.

The power semiconductor module shown in FIG.
The circuit portion 1401, the power circuit wiring portion 1403 and the signal circuit wiring portion 1402 provided on the insulating metal substrate by the first conductive layer (in FIG. 17, the power circuit portion 140
3 and the wiring pattern of the signal circuit portion 1402 are omitted), the case 106, and the power external connection terminal 108a.
And a signal external connection terminal 108b. The circuit portion 1401 is a portion surrounded by a broken line of the three-phase circuit shown in FIG. 18, that is, a so-called 2in1 (dual). The circuit portion 1401 includes a second conductive layer, a power semiconductor element soldered to the second conductive layer, and a thin metal wire connecting the power semiconductor element and the second conductive layer, which are sealed by transfer molding. Consists of

As shown in FIG. 17, by soldering three transfer-molded circuit portions 1401 to a first conductive layer on an insulating metal substrate, a power circuit portion of a three-phase inverter is formed. . According to this method, a three-phase power circuit can be formed with a relatively small transfer mode package. Also, the circuit part 14
By selecting defective products at 01, the yield of the power semiconductor module can be improved. Further, in the illustrated module, the configuration of the power circuit can be changed by combining the circuit portion 1401 and the first conductive layer of the insulating metal substrate, so that the versatility can be increased. However, even in this method, when increasing the capacity of the circuit portion, there is a problem of thermal stress caused by a difference in thermal expansion coefficient between the second conductive layer made of metal and the resin. In addition, when an inexpensive resin insulating layer is used for the insulating layer, there is a problem of effectively dissipating heat generated by the power semiconductor element. In the module described with reference to FIG. 17, the second conductive layer is used as a heat diffusion plate as a means for dissipating heat. For more effective heat dissipation,
It is preferable to increase the thickness of the second conductive layer and increase the area to equivalently increase the heat transfer area and reduce the thermal resistance. On the other hand, in order to reduce the thermal stress at the time of transfer molding, it is desirable not only to reduce the dimensions of the resin and the second conductive layer but also to make it thinner. As can be seen from the above, the reduction in thermal resistance and the reduction in thermal stress are contradictory.

[0019]

As described above, the power semiconductor module according to the prior art cannot satisfy both contradictory requirements of reduction of thermal resistance and reduction of thermal stress in any case. Has problems.

An object of the present invention is to solve the above-mentioned problems of the prior art, to reduce the thermal stress at the time of manufacturing, and to efficiently dissipate the heat generated by the power semiconductor element, thereby providing a highly reliable and inexpensive. A power semiconductor module is provided.

[0021]

According to the present invention, there is provided a power semiconductor module having a power semiconductor element sealed in a transfer mold package, wherein the power semiconductor module includes a heat sink, a heat sink, and a resin insulating layer. A plurality of first conductive layers each having a thickness of 0.7 mm or more and a plurality of circuit portions electrically connected between the plurality of first conductive layers; Are a second conductive layer encapsulated in a transfer mold package and a power semiconductor element connected to the second conductive layer, and the other main of the first conductive layer bonded to the heat sink. The surface and the other main surface of the second conductive layer connected to the power semiconductor element are connected via solder, and the first conductive layer is connected to the second conductive layer.
This is achieved by having a thickness greater than that of the conductive layer.

[0022]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the power semiconductor module according to the present invention will be described below in detail with reference to the drawings. However, the present invention is not limited to the embodiments described below.

FIG. 1 is a diagram showing a cross-sectional structure of a power semiconductor module according to a first embodiment of the present invention, FIG. 2 is a diagram showing a plan structure of the power semiconductor module according to the first embodiment of the present invention, and FIG. FIG. 4 is a diagram schematically illustrating heat dissipation of a power semiconductor, which is shown by enlarging a portion B in FIG. 1, FIG. 4 is a diagram showing an internal structure of a circuit portion, and FIG. 5 is an external shape of a transfer-molded circuit portion FIG. 6 is a diagram showing a cross-sectional structure of a circuit portion, and FIG.
FIG. 3 is a diagram illustrating a configuration of a circuit of in1 (dual). FIG.
7, 107 is a circuit portion, 109 is a glass epoxy substrate, 110 is a driver IC, 113 is a resin having a high thermal conductivity, 301 is a solder layer, 401 is a second conductive layer,
Reference numeral 501 denotes an external connection terminal, reference numeral 502 denotes a resin, and other reference numerals are the same as those in FIGS. The first embodiment of the present invention described here is an example in which the present invention is applied to a so-called intelligent power module (IPM) including a three-phase power circuit and a driver IC for controlling the power circuit. The cross section shown in FIG.
It shows a cross section.

In the power semiconductor module shown in FIGS. 1 and 2, a resin insulating layer serving as an insulating substrate is provided on one surface (the upper surface in FIG. 1) of the heat sink 101, and a conductive layer 103 is provided thereon. And a glass epoxy substrate, and a circuit portion 107 is bonded to a predetermined position on the conductive layer 103 by soldering. On the glass epoxy board, a driver IC 110, a bottom entry type external terminal 111 for inputting a control signal, other electronic components not shown, and an external terminal of the circuit portion 107 are soldered. And
A case 106 is bonded on the heat sink 101 via the insulating resin 102. The case 106 includes an external connection terminal 108 formed by insert formation. The soldering of the external terminal 108 and the conductive layer 103 and the bonding of the case 106 to the heat sink 101 are performed simultaneously.

In the first embodiment of the present invention, three transfer-molded circuit portions 107 having an outer shape as shown in FIG. 5 are arranged. 4 and 6 show the internal planar structure and the cross-sectional structure. The circuit portion 107 forms a 2-in-1 (dual) circuit as shown in FIG. 7 in which the IGBT 104a and the diode 104b that are connected in anti-parallel to one second conductive layer 401 are mounted. For the second conductive layer 401, copper or aluminum having high thermal conductivity and low resistance is used. This second conductive layer 401
In consideration of the thermal fatigue life of the solder between the second conductive layer 401 and the power semiconductor element 104, the coefficient of linear expansion is between silicon and aluminum or copper constituting the first conductive layer 103 described later. A composite material of copper and copper oxide or a material in which an alloy of nickel and iron is stacked between copper may be used. Second
The conductive layer 401 is plated with Ni in consideration of bonding with the fine metal wire 105 described later.

Next, a method of manufacturing the circuit portion 107 will be described. The power semiconductor element 104 is soldered to the second conductive layer 401 having a shape as shown in FIG. The shaded portion of the second conductive layer 401 is higher than the other portion, and the other portion forms the bottom surface of the circuit portion 107. At this stage, the second conductive layer 401 is integrated. Predetermined positions of the power semiconductor element 104 and the second conductive layer 401 are connected by a thin metal wire 105. The thin metal wire 105 is an aluminum wire having a diameter of about 200 μm to 500 μm, and is connected using ultrasonic bonding. After connection, it is sealed by transfer molding. The other main surface of the second conductive layer on which the power semiconductor 104 is mounted is exposed without being covered with the resin 502 as can be seen from FIG. After the transfer molding, the second conductive layer 401 is processed to form connection terminals 501 with the outside.

At the time of cooling after the transfer molding, a thermal stress is generated due to a difference in coefficient of thermal expansion between the second conductive layer made of metal and the resin. The thermal stress is applied between the resin 502 and the second conductive layer 401.
Is larger, that is, as the power semiconductor element 104 has a larger capacity. In order to reduce the thermal stress, the area of the second conductive layer 401 is reduced, that is, the size of the power semiconductor element 104 is reduced.
The thickness of the resin 502 and the second conductive layer 401 may be reduced. However, in consideration of the heat radiation of the power semiconductor element 104, when the second conductive layer 401 has a large area and a large thickness, the heat is spread in the horizontal direction, and the heat transfer area is equivalently increased and the thermal resistance is reduced. The embodiment of the present invention relates to the heat dissipation of the power semiconductor element, as will be described later.
The problem was solved by increasing the thickness of No.3.

The heat radiating plate 101 shown in FIG. 1 is desirably made of a material that is inexpensive and has high thermal conductivity, such as aluminum and copper. The heat radiating plate 101 has a thickness of 2 mm to 5 mm so as to sufficiently reduce the thermal resistance due to the spread of heat inside. The heat radiating plate 101 is provided with a mounting hole 112 as shown in FIG. 1, so that the power semiconductor module can be mounted on a cooling fin (not shown).

The resin insulation layer 102 needs to have low heat resistance and high insulation properties. For this reason, an epoxy resin in which a filler is dispersed is used. As the filler, for example, a filler made of an inorganic compound having high thermal conductivity such as silicon oxide or aluminum oxide is preferably used. At this time, as the content of the filler is increased, the thermal resistance of the resin insulating layer 102 can be reduced, but the amount of the filler that can be dispersed in the epoxy resin has a limit. It is in the range of 75% to 95%. In this case, the thermal conductivity of the resin insulating layer 102 is in a range from 2 W / mK to 5 W / mK.

On the other hand, another effective method for reducing the thermal resistance of the resin insulating layer 102 is to reduce the thickness of the resin insulating layer 102. However, when the thickness of the resin insulating layer 102 is reduced, the withstand voltage decreases accordingly, and pinholes and the like are easily generated in the resin insulating layer 102, which may lower reliability. There is a limit to the lower limit of the thickness of the layer 102, and although it depends on the required dielectric strength voltage, the lower limit is about 50 μm to 250 μm. Further, as shown in FIG. 1, the resin insulating layer 102 insulates the first conductive layer 103 from the heat radiating plate 101, so that the periphery of the first conductive layer 103 also corresponds to the withstand voltage. A creepage distance is required, and for this reason, the missing portion needs to be compensated for by covering the surface of the heat sink 101 with an insulating layer. In the embodiment of the present invention, the resin insulating layer 102 is provided on the front surface of the heat sink 101 on the side of the first conductive layer 103 to obtain a withstand voltage around the first conductive layer 103.

The first conductive layer 103 is made of aluminum or copper having high thermal conductivity and low resistance in consideration of thermal diffusion and energization. In the first conductive layer 103,
The circuit portion 107 is soldered. First conductive layer 103
Have good solder wettability, for example, nickel (N
i), silver (Ag), platinum (Pt), gold (Au), tin (S
n), lead (Pb), copper (Cu), zinc (Zn), antimony (Sb), at least one metal selected from the group of palladium (Pd) or Ni, Ag, Pt, A
An alloy containing at least two metals selected from the group consisting of u, An, Pb, Cu, Zn, Sb, and Pd may be coated.

The solder used for joining the circuit portion 107 and the first conductive layer 103 is close to a eutectic composition of tin and lead such as 63% Sn-37% Pb, from the viewpoint of a low process temperature. An alloy is desirable, but when lead-free solder is required, Sn-Ag-Bi (bismuth) -based solder may be used. The thickness of the solder layer formed at this time is desirably 50 μm or more from the viewpoint of thermal strain generated at the solder joint. Further, the circuit portion 107 and the first conductive layer 103 are formed by solder for joining the power semiconductor element 104 and the second conductive layer 401.
Is selected such that the melting point of the solder for joining is lower.

Since the resin insulating layer has a low thermal conductivity, it is necessary to consider the heat dissipation of the power semiconductor element when increasing the capacity. Also, as described above, the circuit portion 107
However, it is difficult to make the second conductive layer thicker to form a heat diffusion plate when the capacity is increased. As a method for solving this, in the embodiment of the present invention, the thickness of the first conductive layer 103 is set to 0.7 mm or more, and the area of the first conductive layer 103 is made larger than that of the power semiconductor element 104. Further, the thickness t2 of the first conductive layer 103 is larger than the thickness t1 of the second conductive layer 401. Thereby, as shown in FIG. 3, the heat transfer area is increased due to the spread of the heat in the first conductive layer 103, and the thermal resistance can be reduced. At that time, the first conductive layer may be a layer that plays only heat conduction without conducting electric conduction, as shown as a first conductive layer 103a in FIG.

The case 106 is bonded to the above-described heat radiating plate 101 via the resin insulating layer 102. Case 10
By using PPS (polyphenylene sulfide) having heat resistance as the material of No. 6, it is possible to bond the power semiconductor element 104 to the resin insulating layer 102 simultaneously with the solder bonding to the conductive layer 103.

The first conductive layer 1 shown in FIGS.
03, the circuit portion 107, the glass epoxy substrate 109, the electronic component 110 mounted on the glass epoxy substrate 109, and a part of the external connection terminal 108 may be sealed with a resin 113 having high thermal conductivity. In the embodiment of the present invention, since a thin metal wire is sealed by transfer molding, no problem occurs even if a relatively hard thermosetting resin such as an epoxy resin is used.

FIG. 8 is a diagram showing a plan structure of a power semiconductor module according to a modification of the first embodiment of the present invention, which will be described below.

In the modification shown in FIG. 8, the connection terminal 501 of the circuit portion 107 is connected to the external terminal 108 as shown in FIG.
Are not directly connected, the position of the external terminal 108 is shifted, and the external terminal 108 and the conductive layer 103 are connected to the thin metal wire 1.
The connection at 05a connects the external terminal 108 and the connection terminal 501 of the circuit portion 107. In the power semiconductor module of this example, the number of steps for connecting the thin metal wires increases, but since the thin metal wires have low rigidity and can be flexibly deformed even when the member is deformed by heat, it is resistant to deterioration due to thermal shaking. Can be obtained.

In the power semiconductor module according to the first embodiment of the present invention, the first conductive layer has a thickness of 0.7
mm or more, the area is not less than the power semiconductor element, and the thickness of the second conductive layer is made thinner than the thickness of the first conductive layer, so that thermal stress generated during transfer molding can be reduced, The temperature rise of the power semiconductor element can be suppressed.

FIG. 9 is a diagram showing a plan structure of a power semiconductor module according to a second embodiment of the present invention, and FIG. 10 is a diagram showing an equivalent circuit of a power circuit portion of the power semiconductor module according to the second embodiment of the present invention. It is. The reference numerals in the figures are the same as those in FIGS. The second embodiment of the present invention is an example in which the present invention is applied to an intelligent power module (IPM) incorporating a single-phase layer power circuit composed of a single-phase circuit and a driver IC for controlling the power circuit.

FIG. 10 shows a second embodiment of the present invention.
As shown in FIG.
7 in parallel, the first conductive layer 103
And the circuit portion 107, a single-layer circuit having a current capacity twice as large as that of the first embodiment can be formed. This embodiment can increase the capacity of the power semiconductor module without increasing the thermal stress generated at the time of transfer molding. It is possible to manufacture semiconductor modules, it is highly versatile,
It is economical. In this embodiment, the total number of mounted power semiconductor elements is larger than that of the first embodiment of the present invention, but defective products can be sorted out in the circuit portion 107. Also, the manufacturing yield of the power semiconductor module does not decrease.

FIG. 11 is a diagram showing a plan structure of a power semiconductor module according to a third embodiment of the present invention, FIG. 12 is a diagram showing a cross section taken along the line CC ′ of FIG. 11, and FIG.
It is a figure which shows the other example of C 'cross section. 11 to 13, reference numeral 1601 denotes a microcomputer, reference numerals 1701 and 1801 denote holes, and other reference numerals are the same as those in FIGS.

The third embodiment of the present invention shown in FIG.
The power supply circuit and the microcomputer 1601 for controlling the driver IC are mounted on the first embodiment of the present invention. When the temperature of the microcomputer 1601 rises, the microcomputer 1601 may malfunction. Therefore, it is necessary to pay attention to the suppression of the temperature of the microcomputer 1601. Since the power semiconductor element is sealed in the circuit portion 107 by transfer molding, it is not necessary to fill the case 106 with a resin such as silicone gel for sealing. For this reason, the heat generated by the power semiconductor element does not conduct through the resin and raise the temperature of the microcomputer.

On the other hand, during operation of the power semiconductor module, heat generated by the power semiconductor
1 rises in temperature. The rise in the temperature of the heat radiating plate 101 is transmitted to the microcomputer 1601 via the glass epoxy substrate 109 to increase the temperature of the microcomputer 1601. According to the third embodiment of the present invention, as shown in a cross section taken along the line CC ′ of FIG. 11, a heat sink 101 and a resin insulating layer below the microcomputer 1601 are provided in order to prevent the temperature of the microcomputer 1601 from rising. A hole 1701 is provided in 102. By providing the hole 1701, heat generated by the power semiconductor element 104 can be prevented from being transmitted to the microcomputer 1601 via the heat sink 101, and a rise in the temperature of the microcomputer 1601 can be suppressed. The heat radiating plate 101 is manufactured by a press. At the time of pressing, the heat conduction from the heat radiating plate 101 to the microcomputer 1601 can also be performed by providing a concave hole portion 1801 in the heat radiating plate 101 as shown in FIG. It is possible to block the temperature of the microcomputer 1601.

[0044]

As described above, according to the present invention,
It is possible to provide a highly reliable and inexpensive power semiconductor module capable of effectively dissipating heat generated by a power semiconductor element with small thermal stress during manufacturing.

[Brief description of the drawings]

FIG. 1 is a diagram showing a cross-sectional structure of a power semiconductor module according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a planar structure of the power semiconductor module according to the first embodiment of the present invention.

FIG. 3 is a diagram schematically illustrating heat dissipation of a power semiconductor, which is an enlarged view of a portion B in FIG. 1;

FIG. 4 is a diagram showing an internal structure of a circuit portion.

FIG. 5 is a diagram showing an outer shape of a transfer-molded circuit portion.

FIG. 6 is a diagram showing a cross-sectional structure of a circuit portion.

FIG. 7 is a diagram showing a configuration of a 2in1 (dual) circuit built in a circuit portion.

FIG. 8 is a diagram showing a planar structure of a power semiconductor module according to a modification of the first embodiment of the present invention.

FIG. 9 is a diagram showing a plan structure of a power semiconductor module according to a second embodiment of the present invention.

FIG. 10 is a diagram showing an equivalent circuit of a power circuit unit of a power semiconductor module according to a second embodiment of the present invention.

FIG. 11 is a diagram showing a planar structure of a power semiconductor module according to a third embodiment of the present invention.

12 is a diagram showing a cross section taken along line C-C 'of FIG.

FIG. 13 is a view showing another example of a section taken along the line CC ′ in FIG. 11;

FIG. 14 is a cross-sectional view illustrating a configuration example of a small-capacity power semiconductor module according to a conventional technique.

FIG. 15 is a diagram showing an example of a transfer-molded conventional power semiconductor module.

FIG. 16 is a diagram illustrating a power semiconductor module according to the related art configured using transfer-molded individual power semiconductor elements.

FIG. 17 is a diagram showing a configuration of a power semiconductor module proposed as a prior art.

18 is a circuit diagram of the power semiconductor module shown in FIG.

[Explanation of symbols]

 REFERENCE SIGNS LIST 101 radiator plate 102 resin insulating layer 103 conductive layer 104 power semiconductor element 105 thin metal wire 106 case 107 circuit portion 108 a, 108 b external terminal 109 glass epoxy substrate 110 driver IC 113 resin having high thermal conductivity 301 solder layer 401 second conductive layer Reference Signs List 501 External connection terminal 502 Resin 1201 Module 111 Bottom entry connector 112 Module mounting hole 1301, 1302 One chip package 1303 Three terminal regulator 1304 Shunt resistor 1401 Circuit part 1402 Signal circuit wiring part 1403 Power circuit wiring part 1601 Microcomputer 1701, 1801 hole

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Akihiro Tanba 7-1-1, Omika-cho, Hitachi City, Ibaraki Prefecture Within Hitachi Research Laboratory, Hitachi, Ltd. (72) Inventor Akira Bando 3-chome, Sachimachi, Hitachi City, Ibaraki No. 1 Hitachi, Ltd. Hitachi Works (72) Inventor Tsuyoshi Hirai 3-1-1 Kochi-cho, Hitachi City, Ibaraki Prefecture Hitachi Works Hitachi Works, Ltd.

Claims (4)

[Claims] In a power semiconductor module having a power semiconductor element encapsulated in a transfer mold package, a heat sink and a plurality of heat sinks joined to the heat sink through a resin insulating layer with a thickness of 0.7 mm or more. A second electrically conductive layer and a plurality of circuit portions electrically connected between the plurality of first electrically conductive layers, wherein the circuit portions are sealed in a transfer mold package; A conductive layer and a power semiconductor element connected to the second conductive layer, the other main surface of the first conductive layer bonded to the heat sink and a second conductive layer connected to the power semiconductor element. A power semiconductor module, wherein the other main surface of the layer is connected via solder, and the first conductive layer is thicker than the second conductive layer. 2. At least one of terminals of the circuit portion
One is connected to the glass epoxy board, the glass epoxy board and the conductive layer are on the same plane, the control microcomputer is mounted on the glass epoxy board, and the heat sink below the microcomputer mounting part of the glass epoxy board is concave The power semiconductor module according to claim 1, wherein: 3. The circuit portion includes a second conductive layer to which a power semiconductor element is soldered, and a thin metal wire connecting the power semiconductor element to the second conductive layer, which are sealed by transfer molding. 3. The power semiconductor module according to claim 1, wherein the power semiconductor module has a structure. 4. The power semiconductor module according to claim 1, wherein an area of said first conductive layer is larger than an area of a power semiconductor element connected to said second conductive layer.