JP2002045683A - Substrate processing equipment - Google Patents
Substrate processing equipmentInfo
- Publication number
- JP2002045683A JP2002045683A JP2000240156A JP2000240156A JP2002045683A JP 2002045683 A JP2002045683 A JP 2002045683A JP 2000240156 A JP2000240156 A JP 2000240156A JP 2000240156 A JP2000240156 A JP 2000240156A JP 2002045683 A JP2002045683 A JP 2002045683A
- Authority
- JP
- Japan
- Prior art keywords
- shower plate
- dome
- substrate
- shower
- substrate processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 44
- 239000000919 ceramic Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 5
- 238000007664 blowing Methods 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 21
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
(57)【要約】
【課題】 熱膨脹の比較的大きなセラミックでドームを
構成した場合にも、シャワー板の熱膨脹による破損を防
ぐことができ、結果的に、より高温での基板の処理を可
能にした基板処理装置を提供する。
【解決手段】 少なくとも上半部がセラミック製のドー
ム１２で構成された真空容器の天井部に、真空容器内に
処理ガスをシャワー状に吹き出すシャワー板１４が設け
られると共に、このシャワー板１４の上側に、シャワー
板１４との間に処理ガスの導入空間８を気密に画成しな
がら、シャワー板１４を覆う上蓋６が設けられており、
真空容器内に装入した被処理基板Ｗを加熱して所定の処
理を施す基板処理装置において、前記ドーム１２とシャ
ワー板１４とを分割すると共に、それら両者間にシャワ
ー板１４の熱変形を許容する隙間１５を確保した。
(57) [Summary] [PROBLEMS] Even when a dome is made of ceramic having a relatively large thermal expansion, breakage due to thermal expansion of a shower plate can be prevented, and as a result, a substrate can be processed at a higher temperature. A substrate processing apparatus is provided. SOLUTION: A shower plate 14 for blowing a processing gas into the vacuum container in a shower-like manner is provided on a ceiling portion of a vacuum container having at least an upper half portion made of a dome 12 made of ceramic. In addition, an upper lid 6 that covers the shower plate 14 while airtightly defining a processing gas introduction space 8 between the shower plate 14 and the shower plate 14 is provided.
In a substrate processing apparatus for performing a predetermined process by heating a substrate to be processed W loaded in a vacuum vessel, the dome 12 and the shower plate 14 are divided, and thermal deformation of the shower plate 14 is allowed between them. The gap 15 to be made was secured.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、真空容器内に装入
した被処理基板を加熱して所定の処理を施す基板処理装
置に関する。[0001] 1. Field of the Invention [0002] The present invention relates to a substrate processing apparatus that heats a substrate loaded in a vacuum vessel and performs a predetermined process.
【０００２】[0002]
【従来の技術】図３は従来のプラズマ基板処理装置の断
面図である。この図において、１は真空容器の本体をな
す金属製のチャンバ、２はチャンバ１の上に連結された
絶縁材料（アルミナ等のセラミックや石英）製のドーム
である。チャンバ１は真空容器の下半部を構成し、ドー
ム２は真空容器の上半部を構成している。チャンバ１と
ドーム２は、Ｏリング３を介して気密に結合されてお
り、真空容器の内部（反応室）を真空に保持できるよう
になっている。FIG. 3 is a sectional view of a conventional plasma substrate processing apparatus. In this figure, reference numeral 1 denotes a metal chamber forming the main body of the vacuum vessel, and 2 denotes a dome made of an insulating material (ceramic such as alumina or quartz) connected to the chamber 1. The chamber 1 forms the lower half of the vacuum container, and the dome 2 forms the upper half of the vacuum container. The chamber 1 and the dome 2 are air-tightly connected via an O-ring 3, so that the inside of the vacuum chamber (reaction chamber) can be maintained at a vacuum.
【０００３】ドーム２は天井部を有する円筒形状のもの
であり、円筒壁の外周側には円筒状の電極９が配置され
ている。この電極９には、高周波電力を供給できるよう
になっている。また、チャンバ１の内底部には、シリコ
ンウェーハ等の被処理基板Ｗを載置するサセプタ１０が
設けられている。The dome 2 has a cylindrical shape with a ceiling, and a cylindrical electrode 9 is arranged on the outer peripheral side of the cylindrical wall. This electrode 9 can be supplied with high-frequency power. A susceptor 10 for mounting a substrate W to be processed, such as a silicon wafer, is provided on the inner bottom of the chamber 1.
【０００４】ドーム２の天井部は、処理ガスを真空容器
内にシャワー状に吹き出すシャワー板４として構成され
ており、そのシャワー板４の上側には、シャワー板４と
の間に処理ガスの導入空間８を気密に画成しながらシャ
ワー板４を覆う金属製の上蓋６が設けられている。な
お、上蓋６とドーム２の天井部との間には気密性確保の
ためのＯリング５が設けられている。The ceiling of the dome 2 is formed as a shower plate 4 for blowing a processing gas into a vacuum vessel in a shower shape. Above the shower plate 4, a processing gas is introduced between the shower plate 4 and the shower plate 4. A metal upper lid 6 that covers the shower plate 4 while airtightly defining the space 8 is provided. An O-ring 5 is provided between the upper lid 6 and the ceiling of the dome 2 to ensure airtightness.
【０００５】また、上蓋６には処理ガスの導入口７が設
けられている。この上蓋６は電極として使用することも
でき、その場合は、上蓋６に対して高周波電力を供給で
きるようになっている。シャワー板４の上側に確保した
処理ガスの導入空間８は、例えば、２種類以上の処理ガ
スを使用する場合に、ガスを混合するためのスペースと
しての役目を果たす。また、チャンバ１の周壁には、真
空容器内の雰囲気ガスを排気するための排気口１Ａが設
けられている。The upper lid 6 is provided with a processing gas inlet 7. The upper lid 6 can be used as an electrode. In this case, high-frequency power can be supplied to the upper lid 6. The processing gas introduction space 8 secured above the shower plate 4 serves as a space for mixing gases when, for example, two or more processing gases are used. Further, on the peripheral wall of the chamber 1, an exhaust port 1A for exhausting the atmospheric gas in the vacuum vessel is provided.
【０００６】このプラズマ基板処理装置で処理を行う場
合には、真空容器内を真空に保持した状態で真空容器内
にシャワー板４より所定の処理ガスを導入し、円筒状の
電極９に高周波を印加する。そうすると、ドーム２の内
部にプラズマが生成され、そのプラズマが拡散されなが
ら、被処理基板Ｗ上においてほぼ均等な密度となること
により、被処理基板Ｗに対して均一の処理が行われる。When processing is performed by this plasma substrate processing apparatus, a predetermined processing gas is introduced from the shower plate 4 into the vacuum vessel while the inside of the vacuum vessel is kept at a vacuum, and a high frequency is applied to the cylindrical electrode 9. Apply. Then, plasma is generated inside the dome 2, and the plasma is diffused and has a substantially uniform density on the target substrate W, so that the target substrate W is uniformly processed.
【０００７】次に基板処理の流れについて説明する。ま
ず、図示しない基板搬送手段によって、真空容器内の下
方位置にあるサセプタ１０の上面に被処理基板Ｗを搬送
し、図示しない排気手段を用いて、真空容器内を真空排
気して保持する。Next, the flow of substrate processing will be described. First, the substrate W to be processed is transported to the upper surface of the susceptor 10 at a lower position in the vacuum vessel by a substrate transport means (not shown), and the inside of the vacuum vessel is evacuated and held using an exhaust means (not shown).
【０００８】ついで、被処理基板Ｗをその処理に適した
温度に加熱する。被処理基板Ｗの加熱方法としては、例
えば、抵抗加熱ヒータを埋め込んだサセプタ１０を使用
して基板Ｗを加熱したり、ランプを使用して赤外線で基
板Ｗを加熱したり、不活性ガスを使用して真空容器内に
プラズマを生成し、そのプラズマのエネルギを利用して
基板Ｗを加熱したりする方法などがある。Next, the substrate W to be processed is heated to a temperature suitable for the processing. As a method of heating the substrate W to be processed, for example, the substrate W is heated by using a susceptor 10 in which a resistance heater is embedded, the substrate W is heated by infrared using a lamp, or an inert gas is used. Then, plasma is generated in the vacuum chamber, and the substrate W is heated using the energy of the plasma.
【０００９】被処理基板Ｗを所定の温度に加熱したら、
処理ガス供給ライン（図示略）からシャワー板４を介し
てドーム２内に処理ガスを投入する。同時に、高周波電
源から高周波を円筒状の電極９に供給し、ドーム２内に
プラズマを発生させて、サセプタ１０上の被処理基板Ｗ
に対する処理を施す。この場合の処理ガスの供給から停
止、高周波電力の供給から停止までの一連の処理工程の
期間、真空容器内は排気手段によって所定の圧力に保た
れている。そして、処理が終わったら、被処理基板Ｗを
搬送手段を用いて真空容器外へ搬送する。When the substrate W to be processed is heated to a predetermined temperature,
A processing gas is supplied from a processing gas supply line (not shown) into the dome 2 via the shower plate 4. At the same time, a high frequency is supplied from the high frequency power supply to the cylindrical electrode 9 to generate plasma in the dome 2, and the substrate W on the susceptor 10 is processed.
Is performed. In this case, the interior of the vacuum vessel is maintained at a predetermined pressure by the exhaust means during a series of processing steps from supply and stop of the processing gas to supply and stop of the high-frequency power. Then, when the processing is completed, the substrate W to be processed is transported to the outside of the vacuum vessel by using the transport means.
【００１０】[0010]
【発明が解決しようとする課題】ところで、被処理基板
Ｗの温度は、処理の内容によっても違うが、高い場合に
は５００℃以上にもなる。抵抗体を埋め込んだヒータ付
きのサセプタ１０で基板Ｗを加熱しようとする場合、真
空雰囲気内での熱の伝達となるために、ヒータ付きのサ
セプタ１０は、基板Ｗの温度以上の高い温度に制御する
必要がある。従って、サセプタ１０の温度を上昇させる
と、サセプタ１０からの輻射熱により、ドーム２の各部
分が加熱されることになる。By the way, the temperature of the substrate W to be processed depends on the contents of the processing, but when it is high, it can be 500 ° C. or more. When the substrate W is to be heated by the susceptor 10 having the heater embedded therein, heat is transferred in a vacuum atmosphere. Therefore, the susceptor 10 having the heater is controlled at a temperature higher than the temperature of the substrate W. There is a need to. Therefore, when the temperature of the susceptor 10 is increased, each part of the dome 2 is heated by the radiant heat from the susceptor 10.
【００１１】ドーム２がサセプタ１０から受けた熱は、
その周壁部分については、外気に伝わって放出される
が、シャワー板４の部分については、上蓋６で覆われて
いる関係から放熱されにくい。つまり、シャワー板４
は、その上側も下側も真空雰囲気に接しているため、熱
の逃げ道がなく、このため、シャワー板４の部分は、ド
ーム２のその他の部分に比べて温度が高くなりがちで、
一体のドーム２の内部で温度差ができてしまう。The heat that the dome 2 receives from the susceptor 10 is
The peripheral wall portion is transmitted to the outside air and is released, but the shower plate 4 is hardly dissipated due to the fact that it is covered by the upper lid 6. That is, the shower plate 4
Since both the upper and lower sides are in contact with the vacuum atmosphere, there is no escape route for heat, and therefore, the temperature of the shower plate 4 tends to be higher than the other portions of the dome 2,
A temperature difference occurs inside the integrated dome 2.
【００１２】従って、熱膨脹の比較的大きいアルミナ製
のドーム２を使用した装置の場合、温度差に応じた熱膨
脹の関係から、ドーム２の内部に応力が発生し、場合に
よっては、その内部応力が材料の破壊強度を超えて破損
に至ることにもなり得る。Therefore, in the case of the apparatus using the alumina dome 2 having a relatively large thermal expansion, stress is generated inside the dome 2 due to the thermal expansion corresponding to the temperature difference, and in some cases, the internal stress is reduced. It can even exceed the breaking strength of the material and lead to breakage.
【００１３】そこで、ドーム２の材質を熱膨脹の低いも
の、例えば、石英や窒化アルミなどに代替する案も考え
られる。しかし、薄膜形成や薄膜をエッチングする装置
の場合は、例えば、クリーニングガスとしてＮＦ3のプ
ラズマを使用する関係から、クリーニングガスの耐プラ
ズマ性に難点のある石英は使用しにくい。また、熱伝導
度が大きく、熱膨脹が小さい窒化アルミは、内部応力の
発生が小さく、破損しにくいものであるが、非常に高価
で、装置自体のコストアップにつながる。Therefore, it is conceivable to replace the material of the dome 2 with a material having a low thermal expansion, for example, quartz or aluminum nitride. However, in the case of an apparatus for forming a thin film or etching a thin film, it is difficult to use, for example, quartz having difficulty in the plasma resistance of the cleaning gas due to the use of NF 3 plasma as the cleaning gas. Aluminum nitride, which has high thermal conductivity and low thermal expansion, generates little internal stress and is hard to break, but is very expensive and leads to an increase in the cost of the apparatus itself.
【００１４】本発明は、上記事情を考慮し、耐プラズマ
性が高く、熱膨脹の大きい安価なセラミック材料（例え
ばアルミナ）を用いてドームを構成した場合にも、シャ
ワー板の熱膨脹による破損を防ぐことができ、結果的
に、より高温での基板の処理を可能にする基板処理装置
を提供する。The present invention has been made in consideration of the above circumstances, and prevents a shower plate from being damaged by thermal expansion even when a dome is formed using an inexpensive ceramic material (eg, alumina) having high plasma resistance and large thermal expansion. As a result, a substrate processing apparatus capable of processing a substrate at a higher temperature is provided.
【００１５】[0015]
【課題を解決するための手段】請求項１の発明は、少な
くとも上半部がセラミック製のドームで構成された真空
容器の天井部に、真空容器内に処理ガスをシャワー状に
吹き出すシャワー板が別体に設けられると共に、このシ
ャワー板の上側に、シャワー板との間に処理ガスの導入
空間を気密に画成しながらシャワー板を覆う上蓋が設け
られており、真空容器内に装入した被処理基板を加熱し
て所定の処理を施す基板処理装置である。According to the first aspect of the present invention, a shower plate for blowing a processing gas into the vacuum vessel in a shower shape is provided on a ceiling portion of a vacuum vessel having at least an upper half portion formed of a ceramic dome. In addition to being provided separately, an upper lid for covering the shower plate is provided above the shower plate while airtightly defining a processing gas introduction space between the shower plate and the shower plate, and the upper lid is placed in the vacuum vessel. This is a substrate processing apparatus that performs predetermined processing by heating a substrate to be processed.
【００１６】上記発明では、シャワー板をドームと別体
で構成したので、耐プラズマ性が高く、熱膨脹の大きい
安価なセラミック材料を用いてドームを構成した場合に
も、シャワー板の熱膨脹によるドームの破損を防ぐこと
ができる。特に前記ドームとシャワー板とを分割すると
共に、それら両者間にシャワー板の熱変形を許容する隙
間を確保するとよい。この場合では、例えばサセプタか
らの輻射熱を受けて、シャワー板の温度がドームの温度
より相当に高くなって、シャワー板が熱変形しても、シ
ャワー板とドームが分割されていて、両者の間に隙間が
確保されているので、その熱変形が隙間で吸収される。
従って、ドームやシャワー板に内部応力がかからなくな
り、それらの破損のおそれを無くすことができる。In the above invention, since the shower plate is formed separately from the dome, even when the dome is formed using an inexpensive ceramic material having high plasma resistance and large thermal expansion, the dome formed by the thermal expansion of the shower plate can be used. Damage can be prevented. In particular, it is preferable to divide the dome and the shower plate, and to secure a gap between the two to allow thermal deformation of the shower plate. In this case, for example, the temperature of the shower plate becomes considerably higher than the temperature of the dome due to radiant heat from the susceptor, and even if the shower plate is thermally deformed, the shower plate and the dome are divided and the shower plate and the dome are divided. Since the gap is secured, the thermal deformation is absorbed by the gap.
Therefore, internal stress is not applied to the dome or the shower plate, and the possibility of breakage of the dome or the shower plate can be eliminated.
【００１７】[0017]
【発明の実施の形態】以下、本発明の実施形態を図面に
基づいて説明する。図１は、本発明の第１実施形態とし
て示すプラズマ基板処理装置の断面図である。このプラ
ズマ基板処理装置の真空容器は、真空容器の下半部をな
す金属製のチャンバ１と、真空容器の上半部をなすアル
ミナ製のドーム１２と、ドーム１２の天井部にくりぬか
れた円形開口１３に嵌まる別体のアルミナ製のシャワー
板１４と、シャワー板１４を覆うようにシャワー板１４
の上側に配置された金属製の上蓋６とから構成されてい
る。つまり、この基板処理装置では、シャワー板１４と
ドーム１２が分割されている。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view of a plasma substrate processing apparatus shown as a first embodiment of the present invention. The vacuum chamber of the plasma substrate processing apparatus includes a metal chamber 1 forming the lower half of the vacuum chamber, an alumina dome 12 forming the upper half of the vacuum chamber, and a circular hollow formed in the ceiling of the dome 12. A separate shower plate 14 made of alumina that fits into the opening 13, and a shower plate 14 that covers the shower plate 14.
And an upper cover 6 made of metal disposed on the upper side. That is, in this substrate processing apparatus, the shower plate 14 and the dome 12 are divided.
【００１８】シャワー板１４は、多数のガスシャワー孔
を有する本体部１４ａの上側に、本体部１４ａよりも径
大のリング状のフランジ１４ｂを設けて、本体部１４ａ
の上面側に円形の空間１４ｃを確保したものである。こ
のシャワー板１４は、その本体部１４ａをドーム１２の
天井部に設けた円形開口１３に、径方向に隙間１５を保
った状態で嵌め込み、フランジ１４ｂをドーム１２の天
井部の上面に載置し、その上から上蓋６を被せて、上蓋
６をドーム１２の天井部にＯリング５を介して圧接し、
上蓋６とドーム１２の天井部でフランジ１４ｂを挟み込
むことで、真空容器の天井部に取り付けられており、フ
ランジ１４ｂの内周に確保された円形の空間１４ｃによ
り、シャワー板１４と上蓋６の間の処理ガス導入空間８
が形成されている。The shower plate 14 is provided with a ring-shaped flange 14b having a diameter larger than that of the main body 14a above the main body 14a having a large number of gas shower holes.
A circular space 14c is secured on the upper surface side of the. The shower plate 14 has its main body 14a fitted into a circular opening 13 provided in the ceiling of the dome 12 while keeping a gap 15 in the radial direction, and the flange 14b is placed on the upper surface of the ceiling of the dome 12. Then, the upper lid 6 is covered from above, and the upper lid 6 is pressed against the ceiling of the dome 12 via the O-ring 5,
The flange 14 b is sandwiched between the upper lid 6 and the ceiling of the dome 12, thereby being attached to the ceiling of the vacuum vessel. The circular space 14 c secured on the inner periphery of the flange 14 b allows the space between the shower plate 14 and the upper lid 6. Processing gas introduction space 8
Are formed.
【００１９】なお、上蓋６の下面とシャワー板１４のフ
ランジ１４ｂの上面間にはＯリング１７が介在されてお
り、導入空間８に導入された処理ガスが、シャワー板１
４の本体部１４ａのシャワー孔を通らずに抜けてしまう
のを防いでいる。また、このＯリング１７は、その潰し
力で、シャワー板１４を押さえ付ける働きもなす。An O-ring 17 is interposed between the lower surface of the upper lid 6 and the upper surface of the flange 14b of the shower plate 14, and the processing gas introduced into the introduction space 8 is supplied to the shower plate 1 by the processing gas.
4 is prevented from passing through the shower hole of the main body portion 14a without passing through the shower hole. The O-ring 17 also functions to press the shower plate 14 with the crushing force.
【００２０】その他の構成は図３の従来例と同じで、ド
ーム１２の円筒壁の外周側には電極９が配置され、チャ
ンバ１の内底部には、被処理基板Ｗを載置するサセプタ
１０が設けられ、上蓋６には処理ガスの導入口７が設け
られ、チャンバ１の周壁には排気口１Ａが設けられてい
る。The other structure is the same as that of the conventional example shown in FIG. 3. An electrode 9 is arranged on the outer peripheral side of the cylindrical wall of the dome 12, and a susceptor 10 on which the substrate W to be processed is placed is provided on the inner bottom of the chamber 1. The upper lid 6 is provided with a processing gas introduction port 7, and the peripheral wall of the chamber 1 is provided with an exhaust port 1 </ b> A.
【００２１】このように構成された基板処理装置では、
ドーム１２をシャワー板１４と分割してあるので、シャ
ワー板１４の温度が高くなって熱膨脹しても、シャワー
板１４とドーム１２の隙間１５でその伸びが吸収される
ことになり、ドーム１２やシャワー板１４の内部で発生
する応力が小さく抑えられ、破損に至る危険性が減じら
れることになる。In the substrate processing apparatus configured as described above,
Since the dome 12 is divided from the shower plate 14, even if the temperature of the shower plate 14 increases and thermal expansion occurs, the elongation is absorbed by the gap 15 between the shower plate 14 and the dome 12. The stress generated inside the shower plate 14 is kept small, and the risk of breakage is reduced.
【００２２】図２は本発明の第２実施形態として示す基
板処理装置の断面図である。この装置では、ドーム２２
の上部の形状を若干変更し、ドーム２２をストレートな
円筒壁２２Ａと水平な天井壁２２Ｂとで構成し、ストレ
ートな円筒壁２２Ａの上端に、上蓋６の周壁部の下端を
Ｏリング５を介して直接載せている。天井壁２２Ｂに円
形開口２３を設けて、その円形開口２３にシャワー板の
本体１４ａを隙間２５を存して嵌め込む点は、第１実施
形態と同じである。FIG. 2 is a sectional view of a substrate processing apparatus shown as a second embodiment of the present invention. In this device, the dome 22
Is slightly changed, the dome 22 is composed of a straight cylindrical wall 22A and a horizontal ceiling wall 22B. The lower end of the peripheral wall of the upper lid 6 is connected to the upper end of the straight cylindrical wall 22A via the O-ring 5. Directly. The point that a circular opening 23 is provided in the ceiling wall 22B, and the main body 14a of the shower plate is fitted into the circular opening 23 with a gap 25 as in the first embodiment.
【００２３】この第２実施形態の基板処理装置では、ド
ーム２２とシャワー板１４を分割しており、ドーム２２
とシャワー板１４の間に隙間２５を確保しているので、
ドーム２２やシャワー板１４の内部で発生する応力を小
さく抑えることができ、破損に至る危険性を減じること
ができる、という第１実施形態の装置と同じ効果を奏す
る。その上で、この実施形態の装置では、ストレートな
円筒壁２２Ａの上に直接上蓋６を載せた構造にしている
ので、第１実施形態よりも強度が上がるという利点もあ
る。In the substrate processing apparatus according to the second embodiment, the dome 22 and the shower plate 14 are divided.
And a gap 25 between the shower plate 14
The same effect as the device of the first embodiment, in which the stress generated inside the dome 22 and the shower plate 14 can be reduced, and the risk of breakage can be reduced. In addition, since the apparatus of this embodiment has a structure in which the upper lid 6 is directly mounted on the straight cylindrical wall 22A, there is an advantage that the strength is higher than that of the first embodiment.
【００２４】[0024]
【発明の効果】以上説明したように、本発明によれば、
シャワー板をドームと別体に設けて、、シャワー板の熱
変形が直接ドームに伝わらないようにしているので、ド
ームやシャワー板を、耐プラズマ性が高く、安価で、熱
膨脹の大きなセラミック（例えばアルミナ）で構成した
場合にも、熱膨脹によるドームやシャワー板の破損を防
ぐことができる。従って、被処理基板をより高温で処理
することが可能となる。As described above, according to the present invention,
The shower plate is provided separately from the dome so that thermal deformation of the shower plate is not directly transmitted to the dome. Therefore, the dome or the shower plate is made of ceramic having high plasma resistance, low cost, and large thermal expansion (for example, Also when it is made of alumina, it is possible to prevent the dome and the shower plate from being damaged by thermal expansion. Therefore, it becomes possible to process the substrate to be processed at a higher temperature.
【図１】本発明の実施形態のプラズマ基板処理装置の断
面図である。FIG. 1 is a sectional view of a plasma substrate processing apparatus according to an embodiment of the present invention.
【図２】本発明の他の実施形態のプラズマ基板処理装置
の断面図である。FIG. 2 is a sectional view of a plasma substrate processing apparatus according to another embodiment of the present invention.
【図３】従来のプラズマ基板処理装置の断面図である。FIG. 3 is a sectional view of a conventional plasma substrate processing apparatus.
６ 上蓋 ８ 処理ガスの導入空間 １２ ドーム １４ シャワー板 １５ 隙間 Ｗ 被処理基板 6 upper lid 8 processing gas introduction space 12 dome 14 shower plate 15 gap W substrate to be processed
フロントページの続き Ｆターム(参考） 4G075 AA24 AA30 CA25 CA47 CA65 EB01 EC21 FB04 4K030 EA06 FA01 KA08 KA46 5F004 AA01 AA15 AA16 BA04 BB13 BB28 BB29 BC01 DA17 5F045 AA08 BB20 DP03 EB02 EB03 EB06 EB10 EC05 EF05 Continued on the front page F term (reference) 4G075 AA24 AA30 CA25 CA47 CA65 EB01 EC21 FB04 4K030 EA06 FA01 KA08 KA46 5F004 AA01 AA15 AA16 BA04 BB13 BB28 BB29 BC01 DA17 5F045 AA08 BB20 DP03 EB02 EB03 EB06 EB06
Claims (1)
ムで構成された真空容器の天井部に、真空容器内に処理
ガスをシャワー状に吹き出すシャワー板が別体に設けら
れると共に、このシャワー板の上側に、シャワー板との
間に処理ガスの導入空間を気密に画成しながらシャワー
板を覆う上蓋が設けられており、真空容器内に装入した
被処理基板を加熱して所定の処理を施す基板処理装置。1. A shower plate for blowing a processing gas into the vacuum container in a shower-like manner is separately provided on a ceiling portion of a vacuum container having at least an upper half portion made of a ceramic dome. On the upper side, an upper lid that covers the shower plate while airtightly defining a processing gas introduction space between the shower plate and the shower plate is provided, and heats a substrate to be processed placed in a vacuum vessel to perform a predetermined process. Substrate processing equipment to be applied.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000240156A JP2002045683A (en) | 2000-08-08 | 2000-08-08 | Substrate processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000240156A JP2002045683A (en) | 2000-08-08 | 2000-08-08 | Substrate processing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002045683A true JP2002045683A (en) | 2002-02-12 |
Family
ID=18731571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000240156A Pending JP2002045683A (en) | 2000-08-08 | 2000-08-08 | Substrate processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002045683A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7045447B2 (en) | 2002-03-26 | 2006-05-16 | Hitachi Kokusai Electric Inc. | Semiconductor device producing method and semiconductor device producing apparatus including forming an oxide layer and changing the impedance or potential to form an oxynitride |
| JP2008251633A (en) * | 2007-03-29 | 2008-10-16 | Tokyo Electron Ltd | Plasma processing equipment |
| JP2011089208A (en) * | 2004-02-24 | 2011-05-06 | Applied Materials Inc | Movable or flexible showerhead mounting |
| JP2011137228A (en) * | 2009-12-10 | 2011-07-14 | Orbotech Lt Solar Llc | Showerhead assembly for vacuum processing apparatus |
| KR101128267B1 (en) | 2009-11-26 | 2012-03-26 | 주식회사 테스 | Gas distribution apparatus and process chamber having the same |
| KR20140067905A (en) * | 2012-11-27 | 2014-06-05 | 도쿄엘렉트론가부시키가이샤 | Plasma processing apparatus and plasma processing method |
| KR20150127679A (en) * | 2013-03-11 | 2015-11-17 | 어플라이드 머티어리얼스, 인코포레이티드 | High temperature process chamber lid |
| KR20190070228A (en) * | 2017-12-12 | 2019-06-20 | 주식회사 원익아이피에스 | Shower Head Structure and Apparatus for Processing Semiconductor Substrate Including The Same |
-
2000
- 2000-08-08 JP JP2000240156A patent/JP2002045683A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7045447B2 (en) | 2002-03-26 | 2006-05-16 | Hitachi Kokusai Electric Inc. | Semiconductor device producing method and semiconductor device producing apparatus including forming an oxide layer and changing the impedance or potential to form an oxynitride |
| JP2011089208A (en) * | 2004-02-24 | 2011-05-06 | Applied Materials Inc | Movable or flexible showerhead mounting |
| JP2008251633A (en) * | 2007-03-29 | 2008-10-16 | Tokyo Electron Ltd | Plasma processing equipment |
| KR101128267B1 (en) | 2009-11-26 | 2012-03-26 | 주식회사 테스 | Gas distribution apparatus and process chamber having the same |
| JP2011137228A (en) * | 2009-12-10 | 2011-07-14 | Orbotech Lt Solar Llc | Showerhead assembly for vacuum processing apparatus |
| KR102011522B1 (en) * | 2012-11-27 | 2019-08-16 | 도쿄엘렉트론가부시키가이샤 | Plasma processing apparatus and plasma processing method |
| KR20140067905A (en) * | 2012-11-27 | 2014-06-05 | 도쿄엘렉트론가부시키가이샤 | Plasma processing apparatus and plasma processing method |
| KR20150127679A (en) * | 2013-03-11 | 2015-11-17 | 어플라이드 머티어리얼스, 인코포레이티드 | High temperature process chamber lid |
| JP2018138697A (en) * | 2013-03-11 | 2018-09-06 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | High-temperature treatment chamber lid |
| JP2016512575A (en) * | 2013-03-11 | 2016-04-28 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | High temperature processing chamber lid |
| JP2019203198A (en) * | 2013-03-11 | 2019-11-28 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | High-temperature treatment chamber lid |
| KR102193652B1 (en) * | 2013-03-11 | 2020-12-21 | 어플라이드 머티어리얼스, 인코포레이티드 | High temperature process chamber lid |
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| KR20190070228A (en) * | 2017-12-12 | 2019-06-20 | 주식회사 원익아이피에스 | Shower Head Structure and Apparatus for Processing Semiconductor Substrate Including The Same |
| KR102411142B1 (en) | 2017-12-12 | 2022-06-21 | 주식회사 원익아이피에스 | Shower Head Structure and Apparatus for Processing Semiconductor Substrate Including The Same |
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