JP2001339101A - Gallium nitride based compound semiconductor device - Google Patents

Abstract

(57) [Problem] To provide a gallium nitride-based compound semiconductor light emitting device capable of improving light emission intensity and light extraction efficiency and realizing a low operating voltage. A gallium nitride compound semiconductor light-emitting element, Al _x are sequentially stacked on the substrate 101 Ga _y I
n _1-xy N (0 ≦ x <1; 0 <y ≦ 1; 0 <x + y ≦
1) At least the active layer 104, the p-type semiconductor layers 105 and 106, and the metal Pd thin film electrode layer 107 are included, and the interval between the active layer 104 and the Pd thin film 107 is 10 nm or more and 400 nm or less.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a nitride-based semiconductor device, and more particularly to an improvement in characteristics of a gallium nitride-based compound semiconductor device.

[0002]

2. Description of the Related Art In a conventional gallium nitride based semiconductor light emitting device, an insulating substrate such as sapphire is usually used. In a light-emitting element using an insulating substrate, it is difficult to adopt a structure in which an electrode is provided on the back surface opposite to the front surface of the substrate on which the semiconductor layer is formed. Therefore, for example, as disclosed in Japanese Patent Application Laid-Open No. 9-129932, p-type and n-type
A structure in which both electrodes of the mold are provided is employed.

FIG. 7 is a schematic sectional view showing an example of a laminated structure of a conventional light emitting diode (LED). This light emitting diode is provided on a sapphire substrate 7.
GaN buffer layer 702 and Si
A doped n-type GaN layer 703, an active light emitting layer 704,
Mg-doped p-type AlGaN layer 705 and Mg
It includes a doped p-type GaN cap layer 706. A translucent p-type electrode layer 70 made of Ni or Pd is formed on at least a part of the p-type GaN cap layer 706.
An Au pad electrode 708 for electrical connection to the outside is formed in a partial region on the light-transmitting electrode layer 707.
Are formed. Further, an n-type electrode 709 is formed in a part of the n-type GaN layer 703 exposed by dry etching.

Japanese Patent Application Laid-Open No. 9-129932 discloses that in a light emitting diode as shown in FIG. 7, the light output is reduced by 30% by changing the material of the translucent p-type electrode layer 707 from Ni to Pd. Report that it will be higher. However, even if such a Pd translucent electrode 707 is used,
Other characteristics such as the operating voltage of the light emitting diode are not improved.

When a light emitting diode as shown in FIG. 7 is fixed on a mounting portion of a lead frame, a circuit board, a case component, or the like, a method of fixing the semiconductor layer side down to energize each electrode. Therefore, a method of fixing the semiconductor device with the semiconductor layer side up is generally employed. Therefore, the p-type ohmic electrode layer 707 is made translucent as described above so that light generated inside the light emitting element can be efficiently extracted to the outside.

[0006]

As described above, in the gallium nitride based semiconductor light emitting device according to the prior art, even if a light emitting device having a high light emitting intensity can be manufactured, the luminous efficiency and light emission to the outside can be improved. Further improvements are desired for other characteristics such as extraction efficiency and operating voltage.

In such a situation, the present inventors have examined the gallium nitride based semiconductor light emitting device in detail, and found that H due to Mg—H bond is mixed in the InGaN activation layer and the vicinity thereof, in particular, the p-type semiconductor layer. Has been
It has been found that the activation rate of the dopant Mg is poor, and therefore the luminous efficiency is reduced.

Based on the findings found by the present inventors, the present invention efficiently discharges hydrogen (H) in the p-type contact layer, the p-type cladding layer, and the active layer out of the layer. By increasing the activation rate of the p-type dopant,
It is an object of the present invention to provide a light-emitting element that has improved light-emitting efficiency and light-extraction efficiency to the outside, has a low operating voltage, and can suppress a decrease in light-emitting intensity due to a history of conduction.

[0009]

The semiconductor device gallium nitride compound according to the invention To achieve the above object, according _{to, Al x Ga y In 1-} xy N (0 ≦ x <1 , which are sequentially stacked on the substrate; 0 <y ≦ 1;
0 <x + y ≦ 1) Active layer, p-type semiconductor layer, and metal P
It is characterized in that at least a d thin film is included, and a distance between the active layer and the Pd thin film is 10 nm or more and 400 nm or less.

The Pd thin film preferably has a thickness of 0.5 nm or more and 20 nm or less. The substrate is Ga
Preferably, it consists of N.

The method for manufacturing a gallium nitride-based compound semiconductor device according to the present invention is characterized in that at least Al _{x
Ga y In 1-xy N (} 0 ≦ x <1; 0 <y ≦ 1; 0 <x +
y ≦ 1) An active layer, a p-type semiconductor layer, and a metal Pd thin film are formed in this order, and thereafter, for 1 minute at a substrate temperature of 400 ° C. or more and 600 ° C. or less in an inert gas atmosphere or vacuum. As described above, the annealing is performed for a time of 10 minutes or less.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Some embodiments of the present invention will be described below with reference to the drawings, but the present invention is not limited to these embodiments. . The active layer of the gallium nitride compound semiconductor device according to the present invention may contain As or P as a group V element.

(Embodiment 1) FIG. 1 is a schematic sectional view showing a laminated structure of a semiconductor light emitting device according to Embodiment 1 of the present invention. This light emitting element is a sapphire substrate 10
GaN buffer layer 102, n-type G
aN layer 103, In _0.02 Ga _0.98 N active layer 104, p-type Al _0.08 Ga _0.92 N layer 105, Mg-doped p-type G
An aN layer 106 is included. A transparent thin-film electrode layer 107 of metal Pd having a thickness of 0.5 to 20 nm is formed in at least a part of the region on the p-type GaN layer 106, and an Au electrode A pad 108 is formed. Also, the n-type electrode 1 is formed in a part of the n-type GaN layer 103 exposed by dry etching.
09 is provided.

In the method of manufacturing such a semiconductor light emitting device, MOCVD (metal organic chemical vapor deposition) is used. First, the sapphire substrate 101 is placed in an H ₂ atmosphere.
Is heated to 1050 ° C. to perform surface treatment on the substrate. Thereafter, the substrate temperature is lowered to 500 ° C.
A GaN buffer layer 102 having a thickness of 5 nm is formed. Next, the temperature of the substrate is quickly raised to 1020 ° C. to grow an n-type GaN layer 103 having a thickness of 4 μm.
A doped In _0.02 Ga _0.98 N active layer 104 is grown to a thickness of 30 nm. Thereafter, the p-type Al _0.08 Ga _0.92 N layer 105 and the p-type Ga
The N cap layer 106 is formed in order, and the total thickness of both layers is set to be in the range of 10 to 400 nm.

A laminate including a plurality of semiconductor layers formed on a sapphire substrate as described above has a thickness of 10 ° C. at 800 ° C.
Annealed for minutes. This annealing is performed to activate the p-type dopant contained in the p-type layer made of the gallium nitride-based semiconductor, thereby lowering the resistance of the p-type semiconductor layer.

Thereafter, in order to form the n-type electrode 109, a resist is applied on the cap layer 106, patterning is performed by photolithography, and a part of the stacked body including a plurality of semiconductor layers is removed by dry etching. As a result, a part of the n-type GaN layer 103 is exposed. An n-type electrode 109 is formed on a part of the n-type GaN layer region exposed in this manner. Further, a resist is applied again on the cap layer 106 and patterning is performed by photolithography, and a translucent p-type electrode layer 107 made of a metal Pd thin film is formed in a partial region on the p-type GaN cap layer 106. Is deposited to a thickness in the range of 0.5 to 20 nm. By a similar procedure, an Au electrode pad 108 having a thickness of 500 nm or more is formed in a partial region on the p-type electrode layer 107. further,
A thickness of 100 to cover a stacked body including a plurality of semiconductor layers;
A 500 nm SiO ₂ dielectric film (not shown) is formed by sputtering. Then, in an annealing furnace,
₂ or 4 in an inert gas of Ar or vacuum
Annealing of the semiconductor laminate was performed at a temperature of 00 to 600 ° C. for a time of 1 to 10 minutes, whereby a good ohmic contact could be obtained for both the p-type and n-type electrodes.

The characteristics of the light emitting device according to Example 1 thus obtained were examined. As an example of its characteristics,
The distance between the active layer 104 and the p-type electrode layer 107 is 300
In the case of nm, the emission intensity at an injection current I = 20 mA was 2.2 mW.

FIG. 3 is a graph showing the relationship between the operating voltage and the thickness of the p-type metal electrode layer 107 in the light emitting device having the laminated structure shown in FIG. That is,
The horizontal axis of this graph represents the p-type metal electrode film thickness (nm),
The vertical axis represents the operating voltage (V). Curve 31 represents the operating voltage characteristic of the light emitting device according to the prior art.
Reference numeral 2 denotes an operating voltage characteristic of the light emitting device according to the first embodiment.

In the graph of FIG. 3, active layer 104 and p
The distance from the mold electrode layer 107 was 400 nm, and the injection current was I = 20 mA. Further, the light emitting device according to the prior art was different from Example 1 only in that a Ni film was used as the p-type electrode layer 107. In such a conventional light emitting device, the thickness of the Ni film is 10
In the case of nm, the operating voltage was 3.3 V, and the operating voltage increased as the Ni electrode layer became thinner. On the other hand, Example 1
In, when the thickness of the Pd electrode layer is 10 nm, the light-emitting element operates at 3.1 V, and the increase in operating voltage due to the decrease in the thickness of the Pd electrode layer is slightly suppressed as compared with the case of the Ni electrode layer. It had been. However, in any case of the Ni electrode layer and the Pd electrode layer, when the film thickness was smaller than 0.5 nm, a remarkable increase in the operating voltage occurred. Further, with respect to the light extraction efficiency from the light emitting element to the outside, when the thickness of the p-type electrode layer was larger than 20 nm, the efficiency was remarkably deteriorated, and the light output sharply decreased. From these facts, the thickness of the Pd electrode layer 107 in this embodiment is 0.5 to 20
It is understood that it is preferably within the range of nm.

Further examination revealed that the Pd electrode layer 107
The operating voltage was 3.3 V when the film thickness was 3.5 nm, and the operating voltage was 3.2 V when the film thickness was 7 nm.
However, when the thickness of the Pd electrode is 2 nm, the light output does not spread uniformly over the entire electrode surface and tends to be low.
When the thickness is more than 15 nm, the ratio of light from the light emitting layer 104 blocked by the Pd electrode layer increases, and the light output tends to decrease. For this reason, P in the present embodiment is
It is understood that the thickness of the d electrode layer is more preferably 2 nm or more and 15 nm or less.

FIG. 4 is a graph showing the effect of the distance between the active layer 104 and the p-type electrode layer 107 on the operating voltage in the light emitting device according to the first embodiment. That is, the horizontal axis of this graph represents the distance (nm) between the active layer and the p-type electrode, and the vertical axis represents the operating voltage (V). Curve 4
Reference numeral 1 denotes a measurement result of the light emitting device of Example 1. From this graph, it can be seen that in the light emitting device according to Example 1, the operating voltage decreases when the distance between the active layer and the p-type electrode is 400 nm or less. This is achieved by setting the distance between the active layer and the p-type electrode to be appropriate.
From the semiconductor layers 106 and 105 and the active layer 104.
This is considered to be due to efficient discharge due to the presence of the Pd electrode layer 107. This is because Pd is a metal that can absorb hydrogen. On the other hand, when the distance between the active layer and the p-type electrode was smaller than 10 nm, light emission from the light emitting element could not be confirmed. Therefore, the active layer
It is understood that the distance between the p-type electrodes is preferably in the range of 10 to 400 nm.

FIG. 5 is a graph showing the effect of the distance between the active layer and the p-type electrode in the light emitting element on the light emission intensity. That is, in this graph, the horizontal axis is the active layer-p
The vertical axis represents the light emission intensity (mW). A curve 51 represents a measurement result of the light emitting device of Example 1. As can be seen from this graph, in the light emitting device of Example 1, when only the distance between the active layer and the p-type electrode was changed,
When the total thickness of the p-type semiconductor layers 105 and 106 existing between the p-type electrodes was within the range of 100 to 400 nm, the emission intensity was high, and a light emission intensity of about 2.2 mW was obtained. This is because when the distance between the active layer and the p-type electrode is smaller than 100 nm, the p-type semiconductor layers 105 and 106 existing between them are present.
Is considered to be insufficient, and if it is larger than 400 nm, the effect of removing H by the Pd electrode layer 107 cannot be sufficiently obtained, so that efficient light emission intensity cannot be obtained. Therefore, from the viewpoint of the emission intensity shown in FIG. 5, the distance between the active layer and the p-type electrode layer is 100
It is understood that it is preferably within the range of 400 nm.

FIG. 6 is a graph showing the effect of the distance between the active layer and the p-type electrode on the rate of decrease in light emission intensity due to the history of the current test of the light emitting element. That is, in this graph, the horizontal axis represents the distance (nm) between the active layer and the p-type electrode,
The vertical axis represents the ratio of the light emission intensity after the current application test history to the initial light emission intensity, that is, the light emission intensity after current application / initial light emission intensity (a.
u. : Arbitrary unit). Curve 61 represents the measurement result of the light emitting device according to Example 1, and curve 6 represents
Reference numeral 3 denotes a measurement result of the light emitting device according to the conventional example. The light emitting device according to this conventional example has a Pd electrode layer 107.
Was only replaced by a Ni electrode layer.

As is clear from the graph of FIG. 6, in each of the light emitting devices of Example 1 and the conventional example, when the distance between the active layer and the p-type electrode is 200 nm or more, the light emission intensity based on the energizing test history is measured. It can be seen that the decrease can be suppressed. However, when the distance between the active layer and the p-type electrode is 200 nm, in the light emitting device of the conventional example, the ratio of the light emission intensity between the initial stage and after the history of the current test is 0.85, whereas In the device, the emission intensity ratio is improved to 0.88. On the other hand, when the distance between the active layer and the p-type electrode is 40
When the thickness is larger than 0 nm, the effect of dehydrogenation by the Pd electrode layer 107 becomes insufficient, so that a high-efficiency optical output cannot be obtained. Therefore, in order to prevent a decrease in the luminous efficiency due to the history of the conduction test and to obtain a high-efficiency light output, it is particularly preferable that the distance between the active layer and the p-type electrode is in the range of 200 to 400 nm. .

As described above, Pd is a metal that absorbs hydrogen. Therefore, in Example 1, P different from Ni
d as the p-type metal electrode layer 107 and the active layer -p
By adjusting the distance between the mold electrodes to an appropriate value, the p-type semiconductor layers 106 and 105 and the active layer 1 in the light emitting element can be formed.
H present in 04 could be efficiently discharged. As a result, as compared with the light emitting device according to the related art, the operating voltage is reduced, the light emission intensity is increased, and further, the decrease in the light emission intensity is suppressed even after the current test history.

That is, in the semiconductor light emitting device of the first embodiment, the distance between the active layer and the p-type electrode is 10 to 400 nm.
The thickness of the p-type metal P
By using the d electrode layer, H contained in the semiconductor layer could be efficiently discharged, and the activation rate of the dopant in the p-type semiconductor layer and the active layer could be increased. As a result, even if the p-type electrode layer is thinned to 0.5 nm, an increase in operating voltage can be suppressed, a high light emission intensity can be obtained, and a decrease in light emission intensity due to a history of current test has been suppressed. The effect was confirmed.

In order to obtain good ohmic contact between the p-type electrode 107 and the n-type electrode 109, the respective electrodes may be subjected to the ohmic heat treatment simultaneously or separately. That is, the metal Pd electrode layer 1 formed on a part of the p-type GaN cap layer 106
07 is subjected to an ohmic heat treatment for 1 to 10 minutes at a temperature in the range of 400 to 600 ° C. in an inert gas of N ₂ or Ar or in a vacuum in an alloy furnace. Similarly, the n-type electrode 109 is placed in an alloy furnace at 40
The ohmic heat treatment is performed at a temperature within the range of 0 to 600 ° C. for a time of 1 to 10 minutes.

In the modification of the first embodiment, the MO
Using a CVD method, a Si (111) substrate is heated to 1020 ° C.
And an 80 nm thick AlN layer and a 4 μm thick
m n-type GaN layers are sequentially grown, and thereafter, at a substrate temperature of 800 ° C. or less, a non-doped or Si-doped In
_{A 0.02} Ga _0.98 N layer is grown to a thickness of 30 nm. Further, at a substrate temperature of 1020 ° C., p-type Al _0.08 Ga _0.92
An N layer and a p-type GaN cap layer are sequentially grown, and at this time, the total thickness of these two layers is set within a range of 10 to 400 nm. In the gallium nitride-based compound semiconductor device according to this modified example manufactured using the Pd translucent electrode having a thickness in the range of 0.5 to 20 nm, the same effect as that of the above-described first embodiment can be obtained. Obtained.

(Embodiment 2) FIG. 2 is a schematic sectional view showing a laminated structure of a semiconductor light emitting device according to Embodiment 2 of the present invention. This light emitting device has an n-type GaN layer 202 and an In _0.02 Ga
_0.98 N active layer 203, p-type Al _0.08 Ga _0.92 N layer 20
4. Includes Mg-doped p-type GaN layer 205. A transparent thin-film electrode layer 206 of metal Pd having a thickness of 0.5 to 20 nm is formed in at least a part of the region on the p-type GaN layer 205, and an Au electrode pad is 207 are provided. Further, an n-type electrode layer 208 is formed on at least a part of the back surface of the conductive GaN substrate 201.

In such a method for manufacturing a semiconductor light emitting device, first, a GaN substrate 201 is manufactured by using HVPE (halide vapor phase epitaxy). After that, MOCV
Method D is used. First, the GaN substrate 2 was placed in an H ₂ atmosphere.
01 is heated to 1050 ° C., and the surface treatment of the substrate is performed. Thereafter, the n-type GaN layer 202 is grown to a thickness of 4 μm at a substrate temperature of 1020 ° C.
Non-doped or Si at a substrate temperature of 800 ° C or less
A doped In _0.02 Ga _0.98 N active layer 203 is grown to a thickness of 30 nm. Further, at a substrate temperature of 1020 ° C., the p-type Al _0.08 Ga _0.92 N layer 204 and the p-type Ga
The N cap layers 205 are sequentially stacked, and the total thickness of these two layers is set to be in the range of 10 to 400 nm.

Thereafter, a resist is applied to the back surface of the GaN substrate 201, patterning is performed by photolithography, and an n-type electrode 208 having a predetermined pattern is formed by vapor deposition.
Is formed. Next, a resist is applied on the p-type GaN cap layer 205 and patterned by photolithography, and a p-type Pd electrode layer 206 having a thickness in the range of 0.5 to 20 nm is formed into a predetermined pattern by vapor deposition. Is done. Similarly, an Au electrode pad 20 having a thickness of 500 nm or more is formed on the Pd electrode layer 206.
7 are formed in a predetermined pattern. Further, an SiO ₂ dielectric film (not shown) having a thickness in the range of 100 to 500 nm is formed by sputtering so as to cover the stacked body including the plurality of semiconductor layers. Finally, in an annealing furnace, annealing is performed at a temperature of 400 ° C. to 600 ° C. for 1 to 10 minutes in an inert gas of N ₂ or Al or in a vacuum, so that both p-type and n-type electrodes are formed. 206
And 208, a good ohmic contact was obtained.

Typical characteristics obtained in the light emitting device of Example 2 are that the distance between the active layer and the p-type electrode is 3
In the case of 00 nm, the emission intensity at an injection current I = 20 mA was 3.4 mW.

In the graph of FIG. 4, a curve 42 indicates the effect of the distance between the active layer and the p-type electrode on the operating voltage when the injection current I = 20 mA in the light emitting device according to the second embodiment. As can be seen from this graph, according to the light emitting device of Example 1, the distance between the active layer and the p-type electrode was 400 n.
m, the operating voltage is 3.3V,
In the light emitting device of Example 2, the operating voltage can be reduced to about 3.0 V under the same conditions.

In the graph of FIG. 5, a curve 52 shows the effect of the distance between the active layer and the p-type electrode on the light emitting intensity in the light emitting device according to the second embodiment. As can be seen from this graph, the light emitting intensity of the light emitting device according to the second embodiment is significantly higher than that of the light emitting device according to the first embodiment. From this, it can be seen that from the viewpoint of light emission intensity, it is preferable to use a conductive GaN substrate as in Example 2 rather than a sapphire substrate as in Example 1 as a substrate for a light emitting element.

A curve 62 in the graph of FIG. 6 shows the effect of the distance between the active layer and the p-type electrode on the light emitting intensity ratio before and after the energization test in the light emitting device according to the second embodiment.
As can be seen from this graph, according to the light emitting device of Example 1, when the distance between the active layer and the p-type electrode is 200 nm or more, the emission intensity ratio before and after the energization test is about 0.88. In the case of the second light-emitting element, the value was about 0.99 under the same conditions, and it can be seen that the light-emitting element was further improved as compared with the case of the first embodiment.

The cause of the above-described effect in the second embodiment is that, unlike the hetero-growth of the semiconductor layer on the sapphire substrate, the semiconductor layer is stacked on the GaN substrate by homo-growth, and thus the difference in lattice constant is caused. It is considered that the strain is reduced and the coupling between the semiconductor layers is performed more regularly than in the case of the sapphire substrate. As a result, it is considered that the main reason is that the effect of discharging H taken in the active layer 203 is enhanced.

The ohmic treatment of the p-type electrode 206 and the n-type electrode 208 in the second embodiment may be performed simultaneously under the same conditions as in the first embodiment, or may be performed separately. As the GaN substrate, GaAs,
GaN formed on a substrate such as ZnO or SiC
Layers may be used.

[0038]

As described above, according to the present invention, in the gallium nitride based compound semiconductor light emitting device, the distance between the active layer and the p-type electrode is set to an appropriate value within the range of 10 to 400 nm and the light transmitting property is improved. By using a Pd electrode, it is possible to promote the discharge of H in the semiconductor layer and improve the activation rate of the dopant in the p-type GaN layer and the active layer. Therefore, in the light emitting device according to the present invention, the efficiency of extracting light to the outside and the operating voltage can be improved as compared with the conventional light emitting device, and furthermore, the light emitting intensity can be improved so as to suppress the decrease in the light emission intensity due to the history of the current test.

Further, by forming a light emitting element on a conductive GaN substrate, it is possible to reduce lattice mismatch caused by a heterojunction as in the case of using a sapphire substrate. The coupling between the semiconductor crystal layers is regularly performed, and the H can be more efficiently discharged from the semiconductor layers. Therefore, GaN
In the light emitting device according to the present invention using the substrate, it is possible to obtain a stronger light emitting intensity and a lower operating voltage as compared with the case of using the sapphire substrate, and to decrease the ratio of the light emitting intensity before and after the energization test. Can also be suppressed.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view illustrating a stacked structure of a light emitting diode according to a first embodiment of the present invention.

FIG. 2 is a schematic sectional view showing a stacked structure of a light emitting diode according to a second embodiment of the present invention.

FIG. 3 is a graph showing the relationship between the thickness of a p-type metal electrode thin film and the operating voltage in a light emitting device according to Example 1 in comparison with a light emitting device according to a conventional technique.

FIG. 4 is a graph showing the effect of the distance between the active layer and the p-type electrode on the operating voltage in the light emitting devices according to Examples 1 and 2.

FIG. 5 is a graph showing the effect of the distance between the active layer and the p-type metal electrode on the light emission intensity in the light emitting devices according to Examples 1 and 2.

FIG. 6 is a graph showing the effect of the distance between the active layer and the p-type electrode on the light emission intensity ratio before and after the energization test in the light emitting devices of Examples 1 and 2 in comparison with the light emitting device of the conventional example.

FIG. 7 is a schematic cross-sectional view showing a laminated structure of a conventional light emitting element.

[Explanation of symbols]

101 sapphire substrate, 102 GaN buffer layer,
103 n-type GaN layer, 104 InGaN active layer, 1
05 p-type AlGaN cladding layer, 106 p-type GaN
Contact layer, 107 metal Pd thin film electrode layer, 108
Au electrode pad, 109 n-type electrode, 201 GaN substrate, 202 n-type GaN layer, 203 InGaN active layer, 204 p-type AlGaN cladding layer, 205 p-type GaN contact layer, 206 metal Pd thin film electrode layer, 2
07 Au electrode pad, 208 n-type electrode, 701 sapphire substrate, 702 GaN buffer layer, 703 n
GaN layer, 704 InGaN active layer, 705 p-type AlGaN cladding layer, 706 p-type GaN contact layer, 707 Pd or Ni metal thin film electrode layer, 708
Au metal pad, 709 n-type electrode.

 ────────────────────────────────────────────────── ─── Continued on the front page F term (reference) 5F041 AA24 CA33 CA34 CA40 CA46 CA57 CA64 CA65 CA73 CA83 CA88 5F073 AA55 CA17 CB05 CB07 CB10 CB22 DA05 EA29

Claims (4)

[Claims] 1. A substrate laminated in this order was Al _x G
a _y In _1-xy N (0 ≦ x <1; 0 <y ≦ 1; 0 <x + y
≦ 1) At least an active layer, a p-type semiconductor layer, and a metal Pd thin film, and when the distance between the active layer and the Pd thin film is 10 nm or more, 4
A gallium nitride-based compound semiconductor device having a thickness of not more than 00 nm. 2. The Pd thin film has a thickness of 0.5 nm or more and a thickness of 20 nm.
The gallium nitride-based compound semiconductor device according to claim 1, having a thickness of not more than m. 3. The gallium nitride-based compound semiconductor device according to claim 1, wherein said substrate is made of GaN. 4. A substrate at least Al _x Ga _y
In _1-xy N (0 ≦ x <1; 0 <y ≦ 1; 0 <x + y ≦
1) An active layer, a p-type semiconductor layer, and a metal Pd thin film are formed in this order, and then formed in an inert gas atmosphere or vacuum.
A method for manufacturing a gallium nitride-based compound semiconductor device, wherein annealing is performed at a substrate temperature of not less than 00 ° C. and not more than 600 ° C. for a time of not less than 1 minute and not more than 10 minutes.