JP2001338770A - Light emitting display device and method of manufacturing the same - Google Patents
Light emitting display device and method of manufacturing the sameInfo
- Publication number
- JP2001338770A JP2001338770A JP2000156034A JP2000156034A JP2001338770A JP 2001338770 A JP2001338770 A JP 2001338770A JP 2000156034 A JP2000156034 A JP 2000156034A JP 2000156034 A JP2000156034 A JP 2000156034A JP 2001338770 A JP2001338770 A JP 2001338770A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- electrode
- forming
- emitting display
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000010408 film Substances 0.000 claims description 88
- 239000010410 layer Substances 0.000 claims description 60
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 15
- 230000005525 hole transport Effects 0.000 claims description 11
- 239000011651 chromium Substances 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 238000005401 electroluminescence Methods 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 239000000049 pigment Substances 0.000 claims description 2
- 150000002736 metal compounds Chemical class 0.000 claims 2
- 239000012044 organic layer Substances 0.000 description 12
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910000733 Li alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000001989 lithium alloy Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- -1 tris (8-quinolinol) aluminum Chemical compound 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80516—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は発光表示装置及びそ
の製造方法、特に、発光層としてエレクトロルミネセン
ス層を有するエレクトロルミネセンス発光表示装置及び
その製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting display and a method of manufacturing the same, and more particularly, to an electroluminescent light emitting display having an electroluminescent layer as a light emitting layer and a method of manufacturing the same.
【０００２】[0002]
【従来の技術】近年、薄型で消費電力も小さい表示装置
として、発光素子をマトリクス状に配置して構成される
発光表示ディスプレイが注目され、広く開発が進められ
ている。このような発光表示装置の画質を向上する上
で、外部光の反射を抑制してコントラストを高めること
が重要である。かかる発光表示装置の１つとして、例え
ば、有機エレクトロルミネセンス素子（以下、有機ＥＬ
素子又は単にＥＬ素子と称する）を用いた有機ＥＬ発光
表示パネルがある。2. Description of the Related Art In recent years, a light-emitting display in which light-emitting elements are arranged in a matrix has attracted attention as a thin and low-power-consumption display device, and has been widely developed. In order to improve the image quality of such a light-emitting display device, it is important to suppress reflection of external light and increase contrast. As one of such light-emitting display devices, for example, an organic electroluminescence element (hereinafter, referred to as an organic EL)
There is an organic EL light emitting display panel using an organic EL element or an EL element).
【０００３】かかる有機ＥＬ素子の構造を模式的に図１
に示す。ガラス等からなる透明基板１上にインジウムす
ず酸化物（以下、ＩＴＯともいう）等からなる陽極の透
明電極２、正孔輸送層３Ａ及び有機蛍光体薄膜（発光
層）３Ｂ、及び陰極である金属電極４が順次形成されて
いる。陽極（透明電極）２及び陰極（金属電極）４に順
方向電圧を印加することによって発光層３Ｂが発光す
る。有機正孔輸送層３Ａは陽極２から正孔を注入させ易
くする機能と陰極４から注入された電子をブロックする
機能とを有している。FIG. 1 schematically shows the structure of such an organic EL device.
Shown in A transparent electrode 2 of an anode made of indium tin oxide (hereinafter also referred to as ITO), a hole transport layer 3A, an organic phosphor thin film (light emitting layer) 3B, and a metal as a cathode are formed on a transparent substrate 1 made of glass or the like. Electrodes 4 are sequentially formed. By applying a forward voltage to the anode (transparent electrode) 2 and the cathode (metal electrode) 4, the light emitting layer 3B emits light. The organic hole transport layer 3A has a function of facilitating the injection of holes from the anode 2 and a function of blocking electrons injected from the cathode 4.
【０００４】すなわち、かかる有機ＥＬ素子において、
透明電極２から注入された正孔と金属電極４から注入さ
れた電子との再結合によって、励起子が生じ、この励起
子が再結合する過程で光を放ち、この光が透明電極２及
び透明基板１を通過して外部に放出される。そして、透
明電極には仕事関数の大きなものを、金属電極には仕事
関数の小さなものをそれぞれ用いることで、電荷の注入
効率が上がり、発光効率が向上することが知られてい
る。That is, in such an organic EL device,
The recombination of the holes injected from the transparent electrode 2 and the electrons injected from the metal electrode 4 generates excitons, and emits light in the process of the recombination of the excitons. The light is emitted outside through the substrate 1. It is known that by using a material having a large work function for the transparent electrode and a material having a small work function for the metal electrode, the charge injection efficiency is increased and the luminous efficiency is improved.
【０００５】尚、上記した有機層に加えて、電子輸送層
が発光層３Ｂ及び金属電極４の間に設けられることもあ
る。また、図２に示すように、陽極２の一部に仕事関数
の小さな金属膜５を補助電極として設けることによっ
て、部分的に正孔電荷の注入効率を下げて、外部に放出
される発光に寄与しない電流を減少させると共に該金属
膜５及び陽極２の一体となった全陽極の抵抗値を低減
し、発光効率の向上を図った有機ＥＬ素子が、例えば、
本願と同一出願人による特開平５−３０７９９７号公報
等に開示されている。[0005] In addition, an electron transport layer may be provided between the light emitting layer 3B and the metal electrode 4 in addition to the above-mentioned organic layer. As shown in FIG. 2, by providing a metal film 5 having a small work function as an auxiliary electrode on a part of the anode 2, the injection efficiency of hole charges is partially reduced, and light emission to the outside is reduced. An organic EL device that reduces the current that does not contribute and reduces the resistance value of all the anodes in which the metal film 5 and the anode 2 are integrated to improve the luminous efficiency is, for example,
It is disclosed in Japanese Patent Application Laid-Open No. Hei 5-307997 and the like by the same applicant as the present application.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、上記し
た補助電極を用いた表示装置においては、図３に示すよ
うに、当該補助電極による外部光の反射によって十分な
コントラストが得られないという問題があった。本発明
はかかる点に鑑みてなされたものであり、その目的とす
るところは、良好なコントラストを有する高画質かつ高
性能な表示装置及びその製造方法を提供することにあ
る。However, in the display device using the above-mentioned auxiliary electrode, as shown in FIG. 3, there is a problem that sufficient contrast cannot be obtained due to reflection of external light by the auxiliary electrode. Was. The present invention has been made in view of the foregoing, and an object of the present invention is to provide a high-quality and high-performance display device having good contrast and a method of manufacturing the same.
【０００７】[0007]
【課題を解決するための手段】本発明による発光表示装
置は、透明電極、金属電極、及び透明電極と金属電極と
の間に配された発光層を含む発光表示装置であって、透
明電極及び発光層間の一部に形成され透明電極に電気的
に接続された補助電極と、補助電極による外部光の反射
を防止する反射防止膜と、を有することを特徴としてい
る。A light-emitting display device according to the present invention is a light-emitting display device including a transparent electrode, a metal electrode, and a light-emitting layer disposed between the transparent electrode and the metal electrode. It is characterized by having an auxiliary electrode formed in a part of the light emitting layer and electrically connected to the transparent electrode, and an antireflection film for preventing external light from being reflected by the auxiliary electrode.
【０００８】また、本発明による発光表示装置は、透明
基板上に透明電極、発光層及び金属電極が順次形成され
た発光表示装置であって、基板及び透明電極間の一部に
形成され透明電極に電気的に接続された補助電極と、補
助電極による外部光の反射を防止する反射防止膜と、を
有することを特徴としている。本発明による発光表示装
置の製造方法は、透明基板上に透明電極を形成するステ
ップと、透明電極上の一部に反射防止膜を形成するステ
ップと、反射防止膜上に補助電極を形成して透明電極、
反射防止膜及び補助電極からなる第１電極を構成するス
テップと、第１電極上に発光層を形成するステップと、
発光層上に第２電極を形成するステップと、を有し、反
射防止膜は、補助電極が透明電極に電気的に接続される
ように形成されたことを特徴としている。A light emitting display device according to the present invention is a light emitting display device in which a transparent electrode, a light emitting layer and a metal electrode are sequentially formed on a transparent substrate, wherein the transparent electrode is formed on a part between the substrate and the transparent electrode. And an anti-reflection film for preventing external light from being reflected by the auxiliary electrode. The method of manufacturing a light emitting display according to the present invention includes forming a transparent electrode on a transparent substrate, forming an anti-reflection film on a part of the transparent electrode, and forming an auxiliary electrode on the anti-reflection film. Transparent electrode,
Forming a first electrode comprising an anti-reflection film and an auxiliary electrode; forming a light emitting layer on the first electrode;
Forming a second electrode on the light emitting layer, wherein the anti-reflection film is formed such that the auxiliary electrode is electrically connected to the transparent electrode.
【０００９】また、本発明による発光表示装置の製造方
法は、透明基板上に反射防止膜を形成するステップと、
反射防止膜上に補助電極を形成するステップと、補助電
極上に透明電極を形成して反射防止膜、前記補助電極及
び前記透明電極からなる第１電極を構成するステップ
と、第１電極上に発光層を形成するステップと、発光層
上に第２電極を形成するステップと、を有することを特
徴としている。Further, according to the method of manufacturing a light emitting display device according to the present invention, a step of forming an antireflection film on a transparent substrate;
Forming an auxiliary electrode on the anti-reflection film; forming a transparent electrode on the auxiliary electrode to form a first electrode comprising the anti-reflection film, the auxiliary electrode and the transparent electrode; The method is characterized by including a step of forming a light emitting layer and a step of forming a second electrode on the light emitting layer.
【００１０】[0010]
【発明の実施の形態】本発明の実施例を図面を参照しつ
つ詳細に説明する。尚、以下に説明する図において、実
質的に同等な部分には同一の参照符号を付している。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described in detail with reference to the drawings. In the drawings described below, substantially equivalent parts are denoted by the same reference numerals.
【００１１】［第１の実施例］図４は、発光表示装置１
０の一部を模式的に示す斜視図である。図に示すよう
に、この発光表示装置１０の基板１上には、ＩＴＯ膜か
らなる陽極２がストライプ状に設けられている。陽極２
は、互いに平行な複数のストライプ状に配列されてい
る。また、隔壁１７が陽極２に直交するように基板１及
び陽極２上にわたって形成されている。すなわち、隔壁
１７が少なくとも陽極２の一部分を露出せしめるように
形成されている。また、陽極２上の一部には反射防止膜
７及び補助電極５が形成されている。これらの構成につ
いては後に詳細に説明する。図４において、隔壁１７は
逆テーパ形状の断面を有しているが、Ｔ字形状等の断面
形状を有していてもよい。隔壁１７の間に挟まれた領域
には、陽極２上に少なくとも１層の有機層３が形成され
ている。例えば、有機層３は、有機ＥＬ発光層の単一層
であるか、あるいは有機ＥＬ発光層に加えて有機正孔注
入層、有機正孔輸送層、有機電子輸送層、又は有機電子
注入層を含んでいてもよい。[First Embodiment] FIG. 4 shows a light emitting display device 1 according to the present invention.
FIG. 2 is a perspective view schematically showing a part of a zero. As shown in FIG. 1, an anode 2 made of an ITO film is provided on a substrate 1 of the light emitting display device 10 in a stripe shape. Anode 2
Are arranged in a plurality of stripes parallel to each other. The partition wall 17 is formed over the substrate 1 and the anode 2 so as to be orthogonal to the anode 2. That is, the partition wall 17 is formed so as to expose at least a part of the anode 2. Further, an antireflection film 7 and an auxiliary electrode 5 are formed on a part of the anode 2. These configurations will be described later in detail. In FIG. 4, the partition wall 17 has an inverted tapered cross section, but may have a T-shaped cross section or the like. At least one organic layer 3 is formed on the anode 2 in a region sandwiched between the partition walls 17. For example, the organic layer 3 is a single layer of an organic EL light emitting layer, or includes an organic hole injection layer, an organic hole transport layer, an organic electron transport layer, or an organic electron injection layer in addition to the organic EL light emitting layer. You may go out.
【００１２】有機層３上には、その伸張方向に沿って陰
極４が形成されている。このように、交差する陽極２及
び陰極４に挟まれた部分が発光部に対応する。この単純
マトリクス型の表示パネル１０の陰極４の上には保護膜
又は保護基板（図示しない）が設けられることが好まし
い。また、上記した発光表示装置１０において、基板１
及び陽極２は透明であり、ルミネセンス光は基板側から
放射されるので、発光効率を高めるために陰極４上又は
保護膜を介して反射膜（図示しない）を設けることが好
ましい。On the organic layer 3, a cathode 4 is formed along the direction of extension. As described above, the portion sandwiched between the intersecting anode 2 and cathode 4 corresponds to the light emitting portion. It is preferable that a protective film or a protective substrate (not shown) is provided on the cathode 4 of the display panel 10 of the simple matrix type. In the light emitting display device 10 described above, the substrate 1
Since the anode 2 is transparent and the luminescence light is emitted from the substrate side, it is preferable to provide a reflective film (not shown) on the cathode 4 or via a protective film in order to enhance the luminous efficiency.
【００１３】図５は、上記した発光表示装置１０の一部
の線Ａ−Ａに沿った断面を模式的に示している。ガラス
基板１上に透明陽極２が形成され、透明陽極２の一部の
上には反射防止膜７を介して当該陽極より仕事関数の小
さい金属膜（以下、補助電極と称する）５が形成されて
いる。透明陽極２、反射防止膜７及び補助電極５は全体
として正孔の注入効率の高い陽極として作用し、これら
を覆うように有機正孔輸送層３Ａ及び有機化合物である
発光層３Ｂからなる有機層３、及び金属陰極４が順に積
層されている。反射防止膜７は、外部光の反射を防止す
るように作用する。FIG. 5 schematically shows a cross section along a line AA of a part of the light emitting display device 10 described above. A transparent anode 2 is formed on a glass substrate 1, and a metal film (hereinafter referred to as an auxiliary electrode) 5 having a smaller work function than the anode is formed on a part of the transparent anode 2 via an antireflection film 7. ing. The transparent anode 2, the antireflection film 7, and the auxiliary electrode 5 function as an anode having a high hole injection efficiency as a whole, and an organic layer comprising an organic hole transport layer 3A and a light emitting layer 3B which is an organic compound so as to cover them. 3 and a metal cathode 4 are sequentially stacked. The antireflection film 7 functions to prevent reflection of external light.
【００１４】陰極４には、アルミニウム、マグネシウ
ム、インジウム、銀又は各々の合金等の仕事関数が小さ
な金属（例えば、Ａｌ−Ｌｉ合金の仕事関数＝約３．０
ｅＶ）からなり、厚さが約１０〜５００ナノメートル
（ｎｍ）程度のものを用い得る。また、陽極２には、Ｉ
ＴＯ等の仕事関数の大きな導電性材料（ＩＴＯの仕事関
数＝約５．０ｅＶ）からなり厚さが１００〜３００ｎｍ
程度で、又は金（Ａｕの仕事関数＝約５．１ｅＶ）で厚
さが、例えば８０〜１５０ｎｍ程度のものを用い得る。
なお、金（Ａｕ）を電極材料として用いた場合には、電
極は半透明の状態となる。The cathode 4 is made of a metal having a small work function such as aluminum, magnesium, indium, silver or an alloy thereof (for example, the work function of an Al--Li alloy = about 3.0).
eV) having a thickness of about 10 to 500 nanometers (nm). The anode 2 has I
It is made of a conductive material having a large work function such as TO (work function of ITO = about 5.0 eV) and has a thickness of 100 to 300 nm.
Or gold (Au work function = about 5.1 eV) with a thickness of, for example, about 80 to 150 nm.
When gold (Au) is used as the electrode material, the electrode is in a translucent state.
【００１５】陽極２及び正孔輸送層３Ａ間の一部に積層
される補助電極５には、陰極４に用いられたアルミニウ
ム、マグネシウム、インジウム、銀又は各々の合金等の
仕事関数が小さな金属を用いる。陽極２に仕事関数の大
きなＩＴＯを用いる場合、補助電極５には仕事関数が小
さな、例えば、Ａｌ−Ｌｉ，Ｉｎ−Ｌｉ，Ｍｇ−Ｓｒ，
Ａｌ−Ｓｒの合金を用い得る。The auxiliary electrode 5 laminated on a part between the anode 2 and the hole transport layer 3A is made of a metal having a small work function such as aluminum, magnesium, indium, silver, or an alloy thereof used for the cathode 4. Used. When ITO having a large work function is used for the anode 2, the auxiliary electrode 5 has a small work function, for example, Al-Li, In-Li, Mg-Sr,
An alloy of Al-Sr may be used.
【００１６】補助電極５及び陽極２の間に形成される反
射防止膜７に用いられる材料としては、補助電極５及び
陽極２に対して密着性が高いこと、及び補助電極５及び
陽極２間の電気的接続を妨げない程度の導電性を有する
ことが要求される。また、反射防止膜７の膜厚は、補助
電極５及び陽極２間の電気的接続を妨げないよう、薄く
することが好ましい。なお、膜厚が十分薄い場合（例え
ば、数１０ｎｍ程度）には、導電性が低い材料、あるい
は、通常は絶縁体として分類される材料も使用すること
が可能である。The material used for the anti-reflection film 7 formed between the auxiliary electrode 5 and the anode 2 is such that it has high adhesion to the auxiliary electrode 5 and the anode 2, It is required to have a degree of conductivity that does not prevent electrical connection. Further, the thickness of the antireflection film 7 is preferably made thin so as not to hinder the electrical connection between the auxiliary electrode 5 and the anode 2. Note that when the film thickness is sufficiently small (for example, about several tens of nm), a material having low conductivity or a material which is generally classified as an insulator can be used.
【００１７】反射防止膜７に用いられる材料に要求され
る光学的特性としては、膜材料そのものの光吸収率が高
く、膜単体でも反射率が低いことが挙げられる。具体的
には、反射防止膜７に用いられる材料としては、例え
ば、黒色で導電率の高い材料（例えば、炭素膜）、黒色
顔料・染料を基材に分散混入させた膜、あるいは、金属
の化合物（すなわち、酸化物、窒化物、硫化物、ホウ化
物等）もしくはこれらの混合物を用いることができる。
一例としては、カラー液晶ディスプレイのブラックマト
リクスに用いられる材料等を挙げることができる。The optical characteristics required for the material used for the antireflection film 7 include that the film material itself has a high light absorptivity and the film alone has a low reflectance. Specifically, the material used for the antireflection film 7 is, for example, a black material having a high conductivity (for example, a carbon film), a film in which a black pigment or dye is dispersed and mixed in a base material, or a metal material. Compounds (ie, oxides, nitrides, sulfides, borides, etc.) or mixtures thereof can be used.
One example is a material used for a black matrix of a color liquid crystal display.
【００１８】また、膜材料そのものの光吸収率が低い材
料であっても反射防止膜７を形成することができる。す
なわち、透過率が比較的高い材料を用い、補助電極５に
対する入射光と反射光が互いに干渉して弱め合うように
膜厚を設定した膜を用いることができる。より詳細に
は、単層膜、あるいは、屈折率が異なる複数の膜を有す
る多層膜を用い、外部光の波長帯に対して所定の光吸収
率を得るようにすることができる。The anti-reflection film 7 can be formed even if the film material itself has a low light absorptivity. That is, it is possible to use a material having a relatively high transmittance and a film thickness set so that incident light and reflected light with respect to the auxiliary electrode 5 interfere and weaken each other. More specifically, a single-layer film or a multilayer film having a plurality of films having different refractive indices can be used to obtain a predetermined light absorptance in a wavelength band of external light.
【００１９】上記した構成を有する発光表示装置１０の
補助電極部分の反射率を評価したところ、可視光帯域に
おいて１５％以下であり、目視によっても画面の反射が
抑制されコントラストの良好な表示が実現された。図６
に、本実施例の改変例を示す。すなわち、発光表示装置
１０において、補助電極５、反射防止膜７、及びこれら
と陽極２の接続部、また陽極２の端部を覆うように絶縁
膜９が設けられている。これによって補助電極５及び金
属電極４間、また、陽極２及び金属電極４間の電気的短
絡を防止することができる。なお、上記実施例において
は、有機層３が有機正孔輸送層３Ａ及び有機化合物であ
る発光層３Ｂからなる場合を例に説明したが、少なくと
も１層の有機層を有していればよい。すなわち、例え
ば、有機層３は、有機ＥＬ発光層の単一層であるか、あ
るいは有機ＥＬ発光層に加えて有機正孔注入層、有機正
孔輸送層、有機電子輸送層、又は有機電子注入層を含ん
でいてもよい。When the reflectance of the auxiliary electrode portion of the light-emitting display device 10 having the above-described configuration was evaluated, it was found to be 15% or less in the visible light band. Was done. FIG.
Next, a modified example of this embodiment is shown. That is, in the light emitting display device 10, the insulating film 9 is provided so as to cover the auxiliary electrode 5, the antireflection film 7, the connection portion between the auxiliary electrode 5 and the anode 2, and the end of the anode 2. Thereby, an electrical short circuit between the auxiliary electrode 5 and the metal electrode 4 and between the anode 2 and the metal electrode 4 can be prevented. In the above embodiment, the case where the organic layer 3 includes the organic hole transport layer 3A and the light emitting layer 3B which is an organic compound has been described as an example, but it is sufficient that the organic layer 3 has at least one organic layer. That is, for example, the organic layer 3 is a single layer of an organic EL light emitting layer, or an organic hole injection layer, an organic hole transport layer, an organic electron transport layer, or an organic electron injection layer in addition to the organic EL light emitting layer. May be included.
【００２０】［第２の実施例］図７は、本発明の第２の
実施例である発光表示装置１０の断面図を示している。
本実施例においては、基板１上に形成された透明陽極２
及び基板１間の一部に反射防止膜７及び補助電極５が形
成されている。すなわち、補助電極５は陽極２に接続さ
れ、補助電極５及び基板１間に外部光の反射を防止する
ための反射防止膜７が形成されている。そして、反射防
止膜７、補助電極５及び透明陽極２を覆うように有機層
３、及び金属陰極４が順に積層されている。[Second Embodiment] FIG. 7 is a sectional view of a light emitting display device 10 according to a second embodiment of the present invention.
In this embodiment, the transparent anode 2 formed on the substrate 1
Further, an antireflection film 7 and an auxiliary electrode 5 are formed in a part between the substrate 1 and the substrate 1. That is, the auxiliary electrode 5 is connected to the anode 2, and an antireflection film 7 for preventing reflection of external light is formed between the auxiliary electrode 5 and the substrate 1. Then, an organic layer 3 and a metal cathode 4 are sequentially laminated so as to cover the antireflection film 7, the auxiliary electrode 5 and the transparent anode 2.
【００２１】有機層３は、有機ＥＬ発光層の単一層であ
るか、あるいは有機ＥＬ発光層に加えて有機正孔注入
層、有機正孔輸送層、有機電子輸送層、又は有機電子注
入層を含んでいてもよい。反射防止膜７は、基板１を経
て入射する外部光の反射を防止するように作用する。本
実施例によれば、上記した第１の実施例と異なり、補助
電極５は陽極２に直接接触しているので反射防止膜７は
導電性である必要はない。The organic layer 3 is a single layer of the organic EL light emitting layer, or an organic hole injection layer, an organic hole transport layer, an organic electron transport layer, or an organic electron injection layer in addition to the organic EL light emitting layer. May be included. The antireflection film 7 functions to prevent reflection of external light that enters through the substrate 1. According to this embodiment, unlike the above-described first embodiment, since the auxiliary electrode 5 is in direct contact with the anode 2, the antireflection film 7 does not need to be conductive.
【００２２】図８に、本実施例の改変例を示す。図６に
示した第１の実施例の改変例の場合と同様に、補助電極
５、反射防止膜７、及びこれらと陽極２の接続部、また
陽極２の端部を覆うように絶縁膜９が設けられている。
これによって補助電極５及び金属電極４間、また、陽極
２及び金属電極４間の電気的短絡を防止することができ
る。FIG. 8 shows a modification of this embodiment. As in the case of the modification of the first embodiment shown in FIG. 6, the auxiliary electrode 5, the antireflection film 7, the connection between the auxiliary electrode 5 and the anode 2, and the insulating film 9 covering the end of the anode 2. Is provided.
Thereby, an electrical short circuit between the auxiliary electrode 5 and the metal electrode 4 and between the anode 2 and the metal electrode 4 can be prevented.
【００２３】［第３の実施例］本発明の第３の実施例で
ある発光表示装置１０の製造方法について以下に図９を
参照しつつ説明する。なお、説明の簡便さのため、図に
は主要なプロセス工程のみを示している。図９に示すよ
うに、まず、ガラス基板１上に透明電極（陽極）２とし
てＩＴＯ膜を約１７０ｎｍの膜厚で成膜し、所定の間隔
でパターニングする（図９(ａ)）。このパターニング
は、一般的なフォトリソグラフィ法を用いてなすことが
できる。次に、クロム（Ｃｒ）をターゲットに用いたス
パッタ法により、反射防止膜７及び補助電極５を連続し
て成膜する（図９(ｂ)）。Third Embodiment A method of manufacturing a light emitting display device 10 according to a third embodiment of the present invention will be described below with reference to FIG. It should be noted that only the main process steps are shown in the figure for simplicity of explanation. As shown in FIG. 9, first, an ITO film having a thickness of about 170 nm is formed as a transparent electrode (anode) 2 on a glass substrate 1 and patterned at predetermined intervals (FIG. 9A). This patterning can be performed using a general photolithography method. Next, the antireflection film 7 and the auxiliary electrode 5 are continuously formed by a sputtering method using chromium (Cr) as a target (FIG. 9B).
【００２４】反射防止膜７の成膜には、スパッタガスと
して酸素、窒素、及びアルゴンを用い、酸窒化クロムを
形成した。補助電極５の成膜時には、非抵抗が小さくな
るよう、スパッタガスとしてアルゴンのみを用い、膜が
純クロムに近くなるようにした。成膜された反射防止膜
７は、目視によっても黒く見え、補助電極５が鏡面を呈
しているのに比べ、明らかに反射率が低かった。In forming the antireflection film 7, chromium oxynitride was formed using oxygen, nitrogen and argon as a sputtering gas. At the time of forming the auxiliary electrode 5, only argon was used as a sputtering gas so that the resistance was small, and the film was close to pure chromium. The formed anti-reflection film 7 looked black visually, and had a clearly lower reflectance than the auxiliary electrode 5 having a mirror surface.
【００２５】上記したように、ガラス基板１上に透明電
極２、反射防止膜７及び補助電極５を成膜した後、レジ
ストパターンを形成する。次に、硝酸セリウムアンモン
を含むエッチング液でエッチングした後、レジストを剥
離することによって反射防止膜７及び補助電極５を所定
形状にパターニングする（図９(ｃ）。上記したよう
に、エッチングの際、反射防止膜７及び補助電極５共に
同一のエッチング液を用いてエッチングすることが可能
なので、反射防止膜７及び補助電極５のパターニング工
程が簡便になる。As described above, after forming the transparent electrode 2, the antireflection film 7 and the auxiliary electrode 5 on the glass substrate 1, a resist pattern is formed. Next, after etching with an etching solution containing cerium ammonium nitrate, the anti-reflection film 7 and the auxiliary electrode 5 are patterned into a predetermined shape by peeling off the resist (FIG. 9 (c). Since both the antireflection film 7 and the auxiliary electrode 5 can be etched using the same etching solution, the patterning process of the antireflection film 7 and the auxiliary electrode 5 is simplified.
【００２６】次に、絶縁膜９を成膜し、パターニングす
る（図９(ｄ））。その後、ＴＰＤからなる有機正孔輸
送層、及びトリス（８−キノリノール）アルミニウム
（Ａｌｑ3）からなる発光層をそれぞれ約５０ｎｍの膜
厚で形成した後、ＩＴＯ透明電極２と直交する方向にＡ
ｌ−Ｌｉ合金を約１００ｎｍの膜厚で形成し金属陰極４
とし、有機ＥＬ発光表示装置を作製した。Next, an insulating film 9 is formed and patterned (FIG. 9D). Thereafter, an organic hole transporting layer made of TPD and a light emitting layer made of tris (8-quinolinol) aluminum (Alq 3 ) are each formed to a thickness of about 50 nm, and A is formed in a direction orthogonal to the ITO transparent electrode 2.
An l-Li alloy is formed to a thickness of about 100 nm and a metal cathode 4
Thus, an organic EL light emitting display device was manufactured.
【００２７】本実施例においては、補助電極５に金属材
料を用い、当該金属材料の化合物（本実施例の場合、酸
窒化物）を反射防止膜７としているので、反射防止膜の
成膜プロセス並びにパターニング工程を簡易化すること
が可能である。尚、上記した実施例においては、有機Ｅ
Ｌ発光素子を用いた発光表示装置の場合を例に説明した
が、透明電極及びこれに電気的に接続される補助電極、
バス電極などであって反射率の高い電極を有する表示装
置において、当該反射率の高い電極による外部光の反射
を防止する場合にも適用が可能である。In this embodiment, a metal material is used for the auxiliary electrode 5 and a compound of the metal material (oxynitride in this embodiment) is used as the anti-reflection film 7. In addition, the patterning process can be simplified. Incidentally, in the above-described embodiment, the organic E
Although the case of the light emitting display device using the L light emitting element has been described as an example, the transparent electrode and the auxiliary electrode electrically connected thereto,
In a display device having an electrode having high reflectance such as a bus electrode, the present invention can be applied to a case where reflection of external light by the electrode having high reflectance is prevented.
【００２８】[0028]
【発明の効果】上記したことから明らかなように、本発
明によれば、良好なコントラストを有する高画質かつ高
性能な表示装置及びその製造方法を実現できる。As is apparent from the above description, according to the present invention, a high-quality and high-performance display device having good contrast and a method of manufacturing the same can be realized.
【図１】有機ＥＬ素子の構造を模式的に示す図である。FIG. 1 is a view schematically showing a structure of an organic EL element.
【図２】補助電極を有する有機ＥＬ素子の構造を模式的
に示す図である。FIG. 2 is a diagram schematically showing a structure of an organic EL element having an auxiliary electrode.
【図３】補助電極による外部光の反射を示す図である。FIG. 3 is a diagram showing reflection of external light by an auxiliary electrode.
【図４】本発明の第１の実施例である発光表示装置の一
部を模式的に示す斜視図である。FIG. 4 is a perspective view schematically showing a part of the light emitting display device according to the first embodiment of the present invention.
【図５】図４に示す発光表示装置の一部の線Ａ−Ａに沿
った断面図である。5 is a cross-sectional view of a part of the light emitting display device shown in FIG. 4, taken along line AA.
【図６】本発明の第１実施例の改変例を示す断面図であ
る。FIG. 6 is a sectional view showing a modification of the first embodiment of the present invention.
【図７】本発明の第２の実施例である発光表示装置の一
部を模式的に示す断面図である。FIG. 7 is a sectional view schematically showing a part of a light emitting display device according to a second embodiment of the present invention.
【図８】本発明の第２実施例の改変例を示す断面図であ
る。FIG. 8 is a sectional view showing a modification of the second embodiment of the present invention.
【図９】本発明の第３の実施例である発光表示装置の製
造工程を示す図である。FIG. 9 is a diagram illustrating a manufacturing process of the light emitting display device according to the third embodiment of the present invention.
１ 基板 ２ 陽極 ３ 有機層 ３Ａ 正孔輸送層 ３Ｂ ＥＬ発光層 ４ 陰極 ５ 補助電極 ７ 反射防止膜 ９ 絶縁膜 Reference Signs List 1 substrate 2 anode 3 organic layer 3A hole transport layer 3B EL light emitting layer 4 cathode 5 auxiliary electrode 7 antireflection film 9 insulating film
Claims (25)
と前記金属電極との間に配された発光層を含む発光表示
装置であって、 前記透明電極及び前記発光層間の一部に形成され前記透
明電極に電気的に接続された補助電極と、 前記補助電極による外部光の反射を防止する反射防止膜
と、を有することを特徴とする発光表示装置。1. A light emitting display device comprising a transparent electrode, a metal electrode, and a light emitting layer disposed between the transparent electrode and the metal electrode, wherein the light emitting display device is formed on a part of the transparent electrode and the light emitting layer. A light-emitting display device, comprising: an auxiliary electrode electrically connected to the transparent electrode; and an antireflection film for preventing external light from being reflected by the auxiliary electrode.
電極が順次形成された発光表示装置であって、 前記基板及び前記透明電極間の一部に形成され前記透明
電極に電気的に接続された補助電極と、 前記補助電極による外部光の反射を防止する反射防止膜
と、を有することを特徴とする発光表示装置。2. A light emitting display device in which a transparent electrode, a light emitting layer, and a metal electrode are sequentially formed on a transparent substrate, the light emitting display device being formed at a part between the substrate and the transparent electrode and electrically connected to the transparent electrode. A light-emitting display device, comprising: an auxiliary electrode that is provided; and an anti-reflection film that prevents external light from being reflected by the auxiliary electrode.
ス発光層を含むことを特徴とする請求項１又は２に記載
の発光表示装置。3. The light emitting display according to claim 1, wherein the light emitting layer includes an organic electroluminescent light emitting layer.
数の小さな金属膜からなることを特徴とする請求項３に
記載の発光表示装置。4. The light emitting display according to claim 3, wherein the auxiliary electrode is formed of a metal film having a smaller work function than the transparent electrode.
ことを特徴とする請求項３に記載の発光表示装置。5. The light emitting display according to claim 3, wherein the light emitting layer further includes an organic hole transport layer.
の反射率よりも小なることを特徴とする請求項１ないし
５のいずれか１に記載の発光表示装置。6. The light emitting display according to claim 1, wherein the reflectance of the antireflection film is smaller than the reflectance of the auxiliary electrode.
止膜であることを特徴とする請求項１ないし６のいずれ
か１に記載の発光表示装置。7. The light-emitting display device according to claim 1, wherein the anti-reflection film is a single-layer or multi-layer anti-reflection film.
徴とする請求項１ないし６のいずれか１に記載の発光表
示装置。8. The light-emitting display device according to claim 1, wherein the anti-reflection film includes a carbon film.
なることを特徴とする請求項１ないし６のいずれか１に
記載の発光表示装置。9. The light emitting display device according to claim 1, wherein the antireflection film is formed of a film containing a black pigment.
とを特徴とする請求項１ないし６のいずれか１に記載の
発光表示装置。10. The light emitting display according to claim 1, wherein the antireflection film is a metal compound.
防止膜は前記補助電極と同一金属の化合物であることを
特徴とする請求項１ないし６のいずれか１に記載の発光
表示装置。11. The light emitting display according to claim 1, wherein the auxiliary electrode is made of a metal, and the antireflection film is made of a compound of the same metal as the auxiliary electrode.
化物、窒化物、又は酸窒化物であることを特徴とする請
求項１０に記載の発光表示装置。12. The light emitting display device according to claim 10, wherein the antireflection film is made of an oxide, a nitride, or an oxynitride of chromium (Cr).
ことを特徴とする請求項１ないし６のいずれか１に記載
の発光表示装置。13. The light-emitting display device according to claim 1, wherein the anti-reflection film is a thin film of an insulator.
あることを特徴とする請求項１ないし６のいずれか１に
記載の発光表示装置。14. The light emitting display according to claim 1, wherein the antireflection film is a black insulator thin film.
の方法でエッチングできる材料からなることを特徴とす
る請求項１ないし１４のいずれか１に記載の発光表示装
置。15. The light-emitting display device according to claim 1, wherein the anti-reflection film is made of a material that can be etched by the same method as the auxiliary electrode.
と、 前記反射防止膜上に補助電極を形成して前記透明電極、
前記反射防止膜及び前記補助電極からなる第１電極を構
成するステップと、 前記第１電極上に発光層を形成するステップと、 前記発光層上に第２電極を形成するステップと、を有
し、 前記反射防止膜は、前記補助電極が前記透明電極に電気
的に接続されるように形成されたことを特徴とする製造
方法。16. A method of manufacturing a light-emitting display device, comprising: forming a transparent electrode on a transparent substrate; forming an anti-reflection film on a part of the transparent electrode; Forming an auxiliary electrode, the transparent electrode,
Forming a first electrode comprising the antireflection film and the auxiliary electrode; forming a light emitting layer on the first electrode; and forming a second electrode on the light emitting layer. The manufacturing method, wherein the antireflection film is formed such that the auxiliary electrode is electrically connected to the transparent electrode.
前記補助電極及び前記透明電極からなる第１電極を構成
するステップと、 前記第１電極上に発光層を形成するステップと、 前記発光層上に第２電極を形成するステップと、を有す
ることを特徴とする製造方法。17. A method for manufacturing a light emitting display device, comprising: forming an anti-reflection film on a transparent substrate; forming an auxiliary electrode on the anti-reflection film; and forming a transparent electrode on the auxiliary electrode. Forming the anti-reflection film,
Forming a first electrode comprising the auxiliary electrode and the transparent electrode; forming a light emitting layer on the first electrode; and forming a second electrode on the light emitting layer. Characteristic manufacturing method.
センス発光層を含むことを特徴とする請求項１６又は１
７に記載の製造方法。18. The light emitting layer according to claim 16, wherein the light emitting layer includes an organic electroluminescence light emitting layer.
8. The production method according to 7.
ち正孔輸送層を形成するステップを有することを特徴と
する請求項１６ないし１８のいずれか１に記載の製造方
法。19. The method according to claim 16, further comprising the step of forming a hole transport layer prior to the step of forming the light emitting layer.
関数の小さな金属膜からなることを特徴とする請求項１
９に記載の製造方法。20. The method according to claim 1, wherein the auxiliary electrode is formed of a metal film having a smaller work function than the transparent electrode.
10. The production method according to 9.
は、前記補助電極よりも小なる反射率の膜を形成するス
テップを含むことを特徴とする請求項１６ないし２０の
いずれか１に記載の製造方法。21. The manufacturing method according to claim 16, wherein the step of forming the anti-reflection film includes the step of forming a film having a reflectance lower than that of the auxiliary electrode. Method.
は、単層又は多層の反射防止膜を形成するステップを含
むことを特徴とする請求項１６ないし２１のいずれか１
に記載の製造方法。22. The method according to claim 16, wherein forming the anti-reflection film includes forming a single-layer or multi-layer anti-reflection film.
The production method described in 1.
は、黒色材料の膜を形成するステップを含むことを特徴
とする請求項１６ないし２１のいずれか１に記載の製造
方法。23. The method according to claim 16, wherein forming the anti-reflection film includes forming a black material film.
は、金属化合物を形成するステップを含むことを特徴と
する請求項１６ないし２１のいずれか１に記載の製造方
法。24. The method according to claim 16, wherein forming the anti-reflection film includes forming a metal compound.
は、絶縁体の薄膜を形成するステップを含むことを特徴
とする請求項１６ないし２１のいずれか１に記載の製造
方法。25. The method according to claim 16, wherein the step of forming the antireflection film includes the step of forming a thin film of an insulator.
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| JP2000156034A JP2001338770A (en) | 2000-05-26 | 2000-05-26 | Light emitting display device and method of manufacturing the same |
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| JP2001338770A true JP2001338770A (en) | 2001-12-07 |
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|---|---|---|---|
| JP2000156034A Pending JP2001338770A (en) | 2000-05-26 | 2000-05-26 | Light emitting display device and method of manufacturing the same |
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| Country | Link |
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