JP2001326420A - Semiconductor laser, floating head and disk unit - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor laser which can achieve a high recording density and which enhances a data transfer rate by a method wherein the output light of the semiconductor laser can be made very small and the intensity of the output light can be increased, and to provide a floating head and a disk unit. SOLUTION: In the levitating head 1, the rear end face 11a of a floating slider 11 comprises an annular semiconductor laser 2 which is provided with a very small metal body 6 at the interface 5a on the side of a light output face. When near field light which leaks to one interface 5a on which the metal body 6 is formed is scattered or when a plasmon is excited on the surface of the metal body 6 by a laser beam which is totally reflected on one interface 5a, the near field light is generated on the surface of the metal body 6. As a result, the near field light is generated.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser, a flying head and a disk drive, and more particularly, to miniaturizing and increasing the intensity of output light of a semiconductor laser, thereby enabling high recording density, miniaturization, and miniaturization. The present invention relates to a semiconductor laser, a flying head, and a disk device for improving a data transfer rate.

[0002]

2. Description of the Related Art In an optical disk device, the density of an optical disk has been increased from a compact disk (CD) to a digital video disk (DVD), but the performance of a computer and the definition of a display device have been increased. With the increase in capacity, an increase in capacity is increasingly required.

[0003] The recording density of an optical disk is basically controlled by the diameter of a light spot formed on a recording medium. As a means for obtaining a light spot equal to or less than the diffraction limit of laser light, a method in which a minute aperture is provided at a light spot position of a transparent light-collecting medium and near-field light oozing out therefrom has attracted attention. However, this method has low light use efficiency,
The intensity of the near-field light that exudes is low, and a recording mark smaller than a recording mark (about 0.1 μm) obtained by condensing with a conventional lens has not yet been obtained.

As a means for solving this problem, there has been proposed a method of recording / reproducing using the self-coupling effect (SCOOP effect) of a semiconductor laser. That is, this method is a method in which a minute aperture is formed at a spot position on the output surface of a semiconductor laser, and laser light radiated therefrom is used for recording / reproduction. In particular, during reproduction, reflected light from a recording medium is used. The laser beam re-enters the optical resonator of the laser through the small aperture, and the modulation of the oscillation state of the laser caused by the light is detected electrically and optically. According to this detection method, since the sensitivity is high, it is possible to reproduce even if the re-incident light is weak.

As a conventional flying head using this method, for example, A.I. "T" announced by Partovi
ech. Dig. ISOM / ODS '99, ThC-1
(1999) p. 352. "(hereinafter referred to as" Document I "), and" Jpn.J.
Appl. Phys. 38 (1999) Pt. 2, N
o. 11B, p. L1327. "(Hereinafter referred to as" Document II ").

FIG. 16 shows a conventional flying head described in the above document I. The flying head 1 has an edge-emitting semiconductor laser 2 disposed at a rear end 111 a of a flying slider 11. This semiconductor laser 2 has a high reflection multilayer film 11 forming an optical resonator having an oscillation wavelength of 980 nm.
0a and the low reflection multilayer film 110b are disposed on the rear end face and the front end face of the oscillation region 118, respectively.
0b, a focused ion beam of Ga ions (Focuse
d Ion Beam: FIB) for micro opening 1
In this example, a metal light-shielding film 114 on which a metal film 15 is formed is arranged. In such a configuration, recording / reproducing is performed by irradiating the phase-change recording medium 9a of the optical disk 9 with the laser beam 116 of a minute size emitted from the minute opening 115. At the time of reproduction, the reflected light from the recording medium 9a is re-entered into the optical resonator of the semiconductor laser 2 through the minute aperture 115, and the self-coupling effect, that is, the modulation of the semiconductor laser 2 by the re-incident light is electrically or optically performed. The information is reproduced by the detection. By using the laser beam 116 miniaturized by the micro aperture 115 for recording / reproduction, high recording density can be achieved.

FIG. 17 shows a conventional semiconductor laser described in Document II. This semiconductor laser 2 is made of AlGa
A surface-emitting type semiconductor laser 2 oscillating at a wavelength of 850 nm and made of an As-based semiconductor crystal.
The high-reflection multilayer film 110a, the P-type AlAs layer 133,
The mold spacer layer 134, the high-reflection multilayer film 110c having a partial transmittance, and the phase adjustment layer 135 are sequentially formed, and a minute aperture is formed on the output surface 113 of the semiconductor laser 2 by etching using a focused ion beam above the oscillation region 118. 11
In this example, a metal light-shielding body 114 on which a metal layer 5 is formed is arranged. The high-reflection multilayer film 110a and the high-reflection multilayer film 110c constituting the optical resonator are formed of a GaAs layer having a quarter wavelength thickness and an A
It is configured by alternately stacking lGaAs layers. The mirror for the optical resonator on the output side is composed of the above-described reflective multilayer film 110c and the metal light shield 114. In addition, since the phase of the reflection at the metal light shielding body 114 is inverted, the optical path length is reduced to 1/4.
Phase adjusting layer 35 made of AlGaAs having a thickness corresponding to the wavelength
Are adjusted so that the reflections of both are strengthened.
By using the laser beam 116 miniaturized by the micro aperture 115 for recording / reproduction, high recording density can be achieved.

[0008]

However, according to the conventional semiconductor laser shown in FIGS. 16 and 17, an air gap is formed between the recording medium and the metal light shield provided on the output surface of the laser beam. Therefore, even if the size of the minute opening is reduced in order to increase the recording density, there is a problem that the output power is reduced more rapidly than in inverse proportion to the area of the opening, and the recording density cannot be improved.

That is, in the case of a simple aperture, as can be inferred from a microwave waveguide, the aperture is cut off when the aperture is １ ／ or less of the wavelength, and the laser light that can pass through the aperture becomes smaller as the aperture becomes narrower. Decrease. In that case, the laser light is mainly present near the interface as near-field light, and its spread length is about the size of the aperture. When the opening width is 100 nm, the depth and the opening width are almost the same length as shown in FIG. 18A, and the near-field light is transmitted in the normal direction of the opening as shown in FIG. The intensity decreases exponentially, and hardly reaches the surface 114 a of the metal light-shielding body 114. For this reason, when the aperture size is reduced as described above, the power rapidly decreases.

FIG. 19 shows the relationship between the aperture size and the optical output power. As a recording / reproducing optical recording medium, G
Phase change type recording medium mainly composed of eSbTe or the like and FeTb
There is a magneto-optical recording medium mainly composed of Co or the like, but in any case, 3 × 10 ⁶ W / cm ² (light spot diameter of 1 μm
Requires a light power density of about 20 mW).
On the other hand, as shown in FIG.
m and 0.05 μm, the output power is 0.1
mW, 0.01 mW, optical power density is 1.8 × each
It rapidly decreased to 10 ⁶ W / cm ² and 0.7 × 10 ⁶ W / cm ^2, which was a fraction of the optical power density required for recording,
Insufficient output.

Accordingly, it is an object of the present invention to provide a semiconductor laser capable of miniaturizing and increasing the intensity of output light of a semiconductor laser, thereby enabling a high recording density, miniaturizing and improving a data transfer rate. It is to provide a head and a disk device.

[0012]

In order to achieve the above object, the present invention provides a semiconductor laser having a ring-shaped optical resonator which performs laser oscillation by reflecting at a plurality of interfaces. There is provided a semiconductor laser comprising: a minute metal body formed at a position where light is reflected at one of the plurality of interfaces. According to the above configuration, the near-field light that permeates one interface where the minute metal body is formed is scattered, or the plasmon is excited on the surface of the minute metal body by laser light reflected at one interface, and the near-field By generating light on the surface of the minute metal body, near-field light is generated.

In order to achieve the above object, the present invention provides a semiconductor laser having a ring-shaped optical resonator that reflects laser light at a plurality of interfaces and performs laser oscillation. And a light-shielding body having a minute opening formed at a position reflected at one of the interfaces.

In order to achieve the above object, the present invention provides a semiconductor laser having a ring-shaped optical resonator that reflects laser light at a plurality of interfaces and performs laser oscillation. A semiconductor laser comprising a wavefront conversion member formed at a position where the light is reflected at one of the interfaces to block the reflection and emit the laser light to the outside.

In order to achieve the above object, the present invention has a ring-shaped optical resonator formed so as to cross an active layer formed in parallel with a semiconductor substrate and reflecting at a plurality of interfaces to perform laser oscillation. In a semiconductor laser, a laser beam generated by the laser oscillation is emitted from one of the plurality of interfaces.
A semiconductor laser having a wavefront conversion member formed at a position where the laser beam is reflected at one interface and blocking the reflection to emit the laser beam to the outside.

In order to achieve the above object, the present invention provides a flying head, which floats by an air flow caused by rotation of a disk, comprising a semiconductor laser having a ring-shaped optical resonator that performs laser oscillation by reflecting at a plurality of interfaces. A flying head is provided.

In order to achieve the above object, the present invention provides a semiconductor laser having a ring-shaped optical resonator that performs laser oscillation by reflecting at a plurality of interfaces in a flying head that floats by an air flow caused by rotation of a disk. A minute metal body formed at a position where a laser beam generated by the laser oscillation of the semiconductor laser is reflected at one of the plurality of interfaces facing the disk; and the minute metal body is formed. And a photodetector formed using a laser crystal in the vicinity of the one interface.

In order to achieve the above object, the present invention provides a semiconductor laser having a ring-shaped optical resonator that reflects laser light at a plurality of interfaces and oscillates in a flying head that floats by an air flow caused by rotation of a disk. A flying head comprising: a magnetic circuit including a core forming a magnetic gap; and a thin-film magnetic transducer having a coil wound around the core.

In order to achieve the above object, the present invention provides a flying head which floats by an air flow caused by the rotation of a disk, a flying slider generating a floating force by the air flow, and a downstream side of the air flow of the flying slider. Semiconductor laser having a ring-shaped optical resonator that performs laser oscillation by reflecting at a plurality of interfaces, a magnetic circuit including a core forming a magnetic gap, and a thin film having a coil wound around the core Provided is a flying head including a magnetic transducer and a magnetic sensor that detects a magnetic field using a magnetoresistive effect.

In order to achieve the above object, the present invention provides a disk on which a recording medium is formed, a rotating means for rotating the disk, and a ring-shaped optical resonator which reflects at a plurality of interfaces to perform laser oscillation. A floating head having a semiconductor laser having the same, and floating by an airflow caused by rotation of the disk; a scanning unit for scanning the floating head with respect to the disk; and a semiconductor laser and a scanning unit for controlling the scanning unit to scan the disk. A disk device comprising a control unit for recording and reproducing information on and from the recording medium.

[0021]

FIG. 1 shows a flying head according to a first embodiment of the present invention. FIG. 1 (a) is a longitudinal sectional view thereof, and FIG. 1 (b) is a semiconductor laser used for the flying head. (C) is a cross-sectional view taken along line AA in (b) of FIG. The flying head 1 includes a flying slider 11 having a slider surface 11b having a concavo-convex shape for generating a predetermined flying force, and a ring-type semiconductor laser 2 disposed on a rear end surface 11a of the flying slider 11.

The ring type semiconductor laser 2 is shown in FIG.
As shown in (b), the active region 4 formed in a diamond shape in the semiconductor crystal 3 and four interfaces 5a, 3b, 5c, and 4 which are orthogonal to each other and constitute a ring type optical resonator by total reflection.
3d, and a minute metal body 6 disposed on the surface of the interface 5a facing the optical disk 9. The active region 4 performs ring-shaped laser oscillation, and a part 8 of the laser beam 7 generated by the laser oscillation is converted. It can be taken out. As the semiconductor crystal 3, for example, an AlGaInP-based crystal that generates a red (wavelength: 650 nm) laser beam can be used.

As shown in FIG. 1C, the ring type semiconductor laser 2 is made of a substrate 21 made of n-type GaAs.
And n-type AlGaInP sequentially formed on the substrate 21
Clad layer 22, GaInP active layer 23, p-type AlGa
It comprises an InP cladding layer 24, an n-type GaAs current confinement layer 25 and a GaAs cap layer 26, a negative electrode 27, and a positive electrode 28. The interfaces 3a to 3d of the semiconductor crystal 3 are made of Ti
It is protected by a protective film 29 made of O _2, the protective film 2
The fine metal body 6 is formed on the surface of 9. The active region 4 is formed by the current constriction layer 25 by limiting the current region to a diamond shape. The slit 25a through which the current flows in the current confinement layer 25 is about 3 μm, but may be larger. By increasing the size of the slit 25a, the processing accuracy of the interfaces 3a to 3d can be reduced. The length and width of the semiconductor laser 2 are each 300
μm and 200 μm, but are not limited thereto, and can be further reduced. In the case of the ring-type semiconductor laser 2, the length of the optical resonator is twice or more that of a normal edge-emitting semiconductor laser, so that the size can be reduced. Note that the semiconductor laser 2 is moved to the floating slider 11.
When the semiconductor laser 2 is attached to the rear end face 11a, the semiconductor laser 2 may be attached to any one of the positive electrode 28 side, the side interface 5b side, and the negative electrode 27 side. When the bonding is performed at the interface 5b on the side surface, wiring of the electrodes 27 and 28 becomes easy. Also,
The protection film 29 may be replaced with a multilayer film having a thickness of 1/4 wavelength as a cycle and having a refractive index that is alternately larger and smaller. This allows
Even when the interfaces 5a and 5c are incomplete, the reflectance can be increased, and the efficiency of laser oscillation can be increased.

Here, the configuration of the ring-shaped laser oscillation will be described. GaInP, A constituting the semiconductor crystal 3
Since the refractive index of 1GaInP or the like is about 3.5, the critical angle of total reflection is 20 degrees or less. In the semiconductor laser 2 of the present embodiment, a ring type optical resonator is formed by four total reflections. Therefore, the average incident angle on each of the interfaces 3a to 3d is 45 degrees, and it is possible to satisfy the condition of total reflection at each of the interfaces 3a to 3d. When each of the interfaces 3a to 3d is protected by the protective film 29 made of TiO ₂ as in the present embodiment, the refractive index of TiO ₂ becomes 2.
Therefore, the critical angle at the interfaces 3a to 3d between the semiconductor crystal 3 and the protective film 29 is about 40 degrees. Therefore, when the incident angle θ ₁ at the interfaces 3a and 3c is set to 40 degrees or less, the laser beam 7 is refracted and enters the protective film 29,
The light is totally reflected at interfaces 5a and 5c between the protective film 29 and the air, and the interfaces 5a and 5c constitute a ring-type optical resonator. When the incident angle θ ₁ at the interfaces 3a and 3c is set to 40 degrees or less, the incident angle θ _{2 at the} other interfaces 3b and 3d is set.
Becomes 40 degrees or more, and is totally reflected at interfaces 3b and 3d between the semiconductor crystal 3 and the protective film 29, and the interfaces 3b and 3d constitute a ring-type optical resonator. In the present embodiment, the incident angle θ ₁ at the interface 3a and the interface 3c is
b, and the incident angle theta ₂ to 60 degrees in 3d. The minute metal body 6 is formed on the surface of the interface 5a of the protective film 29 constituting the ring-type optical resonator, so that the minute metal body 6 comes into contact with the internal laser light 7 and scatters the laser light.
Near-field light generated by surface plasmons excited in the minute metal body 6 can be obtained. In addition, the minute metal body 6
At the other interfaces 3b, 5c and 3d where no is disposed, the laser light 7 is totally reflected inside and the size of the scattered laser light and the near-field light is almost the same as the size of the minute metal body 6. With this structure, a very small laser beam can be obtained. Note that the incident angle θ _{1 at the} interface 3a is
May be set to 40 degrees or more. In this case, the laser light
Since the light is totally reflected at the interface 3a between the semiconductor crystal 3 and the protective film 29, the fine metal body 6 is preferably embedded in the protective film 29 so as to be in contact therewith. Incident angle θ _{1 at} interface 3a
Is set to 40 degrees or more, the phase of the laser light 7 near the interface 3a and the phase of the surface plasmon excited on the surface of the minute metal body 6 can be matched, and the intensity of the near-field light can be dramatically increased. Can be.

The minute metal body 6 has a rectangular shape of about 50 nm on each side, and is arranged such that each side is parallel or perpendicular to a track (not shown) of the optical disk 9. The shape of the minute metal body 6 is not limited to a rectangle, but may be a circle or an ellipse. If it is made circular, processing becomes easier,
The oval shape has effects such as an increase in plasmon excitation efficiency.

Next, the operation of the flying head 1 of this embodiment will be described. The flying head 1 floats on the recording medium 9a formed on the substrate 9b of the optical disk 9 by the flying slider 11 at a flying height of several tens of nm. When a forward current is applied, the semiconductor laser 2 oscillates in a ring-like manner in the ring-type optical resonator. When the input of the semiconductor laser 2 is modulated based on the information for recording, a part of the laser beam 7 is scattered by the minute metal body 6 based on the modulation,
Further, a part of the laser beam 7 excites surface plasmons on the minute metal body 6, and near-field light is generated therefrom. By irradiating the scattered light or the near-field light 8 to the recording medium 9a, recording is performed. At the time of reproduction, the laser 2 is not modulated, and the recording medium 9a is irradiated as continuous light, and the reflected light from the recording medium 9a is scattered by the minute metal body 6, and re-enters the ring type optical resonator of the semiconductor laser 2. And the semiconductor laser 2
Modulates the impedance (self-coupling effect). By electrically detecting this from the electrode 28 of the semiconductor laser 2, information can be reproduced.

According to the first embodiment, since a ring-type optical resonator is used for the semiconductor laser 2, it is possible to obtain high-efficiency laser output light 8 with small optical loss and high efficiency. Recording and reproduction become possible. Further, since the minute metal body 6 is formed at the position of total reflection of the semiconductor laser 2, a laser output light 8 of a minute size can be efficiently obtained, and recording / reproduction at a high density and a high transfer rate can be performed. .

FIGS. 2A and 2B show a flying head according to a second embodiment of the present invention. FIG. 2A is a longitudinal sectional view thereof, and FIG. 2B is a longitudinal sectional view of a semiconductor laser used for the flying head. ,
FIGS. 3C and 3D are cross-sectional views of main parts of the semiconductor laser. The second embodiment is different from the first embodiment in that a metal light-shielding film 29a having a minute opening 6a is formed without providing a protective film 29 outside the interface 3a of the semiconductor crystal 3. Otherwise, the configuration is the same as that of the first embodiment.

For example, Au can be used for the metal light-shielding film 29a, but other metal such as Ag may be used. Also,
The minute opening 6a is filled with a protective film 29 made of TiO ₂ , and the protective film 29 and the metal light shielding film 29a are substantially on the same plane. The minute opening 6a is formed so that each side is parallel or perpendicular to a recording track (not shown).
The length in the track direction is 0.1 μm and the width is 0.15 μm. It should be noted that the size can be further reduced.

According to the second embodiment, since a ring-type optical resonator is used for the semiconductor laser 2, it is possible to obtain near-field light with low light loss and high efficiency, and to perform high-efficiency recording. Reproduction becomes possible. Further, the size of the near-field light seeping out of the total reflection portion can be reduced by the minute aperture 6a, and high-density optical recording / reproduction is performed using the near-field light seeping from the minute opening 6a. Becomes possible. The cross section of the minute opening 6a is as shown in FIG.
It may have a tapered shape narrowing toward the optical disk 9 side. As a result, the light collection efficiency can be increased, and minute near-field light can be formed. Further, as shown in FIG. 5D, a minute metal body 6 may be arranged at the center of the minute opening 6a shown in FIG. By using the coaxial type, the minute aperture 6a can transmit the laser light 7
Does not act as a cutoff, but can emit the propagating light, so that recording and reproduction can be performed using the stronger laser output light 8.

FIG. 3 shows a flying head according to a third embodiment of the present invention. FIG. 3A is a longitudinal sectional view of a semiconductor laser used for the flying head, and FIG. FIG. 2 is a sectional view taken along line AA in FIG. The ring-type semiconductor laser 2 according to the third embodiment has a light detecting element 30 formed by using a laser crystal near the interface 5a serving as a light output surface in the first embodiment. The other configuration is the same as that of the first embodiment.

The photodetector 30 has the same crystal layer as that of the semiconductor laser 2, that is, the substrate 21 and the cladding layers 22 and 2.
4. It is composed of an active layer 23 and a cap layer 26, on which an electrode 31 is formed. The ring-shaped optical resonator is electrically separated from the ring-shaped optical resonator by the ion implantation layer 32. With this configuration, it is possible to operate as a photodetector by applying a reverse bias between the electrode 27 and the electrode 31. Note that the photodetecting element 30 may be of a two-division type (not shown) in which the light detection element 30 is divided right and left around the position of the minute metal body 6. This two-segment type photodetector 3
By arranging 0 to cross a recording track (not shown), reflected light from the left and right of the track can be separated and detected, and a track position error signal can be formed from a difference signal between these signals. It becomes possible.

According to the third embodiment, the same recording as in the first embodiment can be performed, and at the time of reproduction,
By making the reflected light from the optical disk 9 incident on the photodetector 30, a signal can be efficiently reproduced.

FIGS. 4A and 4B show a semiconductor laser of a flying head according to a fourth embodiment of the present invention. FIG. 4A is a cross-sectional view, FIG. FIG. 3C is a front view. The flying head according to the fourth embodiment is the same as the first embodiment except that the thin-film magnetic transducer 40 is integrated on the semiconductor laser 2, and the other configuration is the same as that of the first embodiment. ing.

The thin-film magnetic transducer 40 includes a magnetic core 44, a yoke section 46, a yoke extension section 46a, and a magnetic pole section 4.
7 and a magnetic circuit composed of a magnetic pole tip 47a, and a coil part composed of a coil lower part 43a, a coil upper part 43b, a lead wire 49, and an electrode pad 49a. A magnetic gap 48 is formed between the pair of magnetic pole tips 47a. The position of the magnetic gap 48 is on the 1-2 μm substrate 21 side with respect to the position of the minute metal body 6. When the semiconductor laser 2 is mounted on the flying slider 11, the magnetic gap 48 is located rearward of the position of the minute metal body 6, that is, the thin film magnetic transducer 40 is positioned on the flying slider 11 side. Attach so that

Next, a method of manufacturing the thin-film magnetic transducer 40 will be described. After the positive electrode 28 is formed,
After the electrode 28 was buried flat with a dielectric film 41 made of SiO ₂ , the coil lower part 43 a was formed by using a process such as sputtering and photolithography, and the coil lower part 43 a was buried flat with a dielectric film 42. Then, the magnetic core 44, the yoke part 46, and the coil upper part 43b
Are manufactured by a similar process. Next, the semiconductor crystal 3
Is cleaved to a predetermined length, and a yoke extension portion 46a, a magnetic pole portion 47, and a magnetic pole tip portion 47a are formed on the end face 3a by sputtering and a photolithography process to form a magnetic gap 48. After that, after a protective film (not shown) is applied, the minute metal body 6 is formed so as to be embedded in the protective film.

The shape of the minute metal body 6 is rectangular or elliptical, and its longitudinal direction is perpendicular to the recording track (not shown). Thereby, the shape of the heating portion of the recording medium can be matched to the shape of the magnetic gap 48, and high-density recording can be performed. Further, the width of the minute metal body 6 may be smaller than the width of the magnetic gap 48. The magnetic field of the magnetic gap 48 spreads on both sides of the gap width, and it is difficult to narrow the track width only by the gap width. In this way, the density of the recording mark is further reduced by suppressing the width of the recording mark by both the light and the magnetic gap. Becomes possible. Further, the direction of the magnetic gap 48 is formed parallel to the recording track (not shown), the size of the minute metal body 6 is set to about half of the magnetic gap 48, and the position of the minute metal body 6 is set to the magnetic pole tip 47.
It may be biased to one side of a. Thus, since only one side of the vertical portion of the magnetic field of the magnetic gap 48 can be irradiated and heated, the field of the perpendicular magnetization film such as TbFeCo can be made much smaller (less than 1/3) than the magnetic gap. Recording density can be further increased.

Next, the operation of the fourth embodiment will be described. At the time of recording, since the minute metal body 6 precedes the magnetic gap 48, the laser output light 8 from the minute metal body 6 heats the magnetic recording medium such as CoCr or the magneto-optical recording medium such as TbFeCo to reduce the coercive force. After the cooling, the magnetic recording is performed by the magnetic field of the magnetic gap 48 before cooling, so-called optically assisted magnetic recording is performed. In the case of signal reproduction, the intensity of the return light from the magnetic medium or magneto-optical recording medium does not change because only the plane of polarization rotates. The change in the polarization plane of the return light does not change the impedance of the semiconductor laser 2, if at all, and therefore, is small, so that the type of reproduction using the self-coupling effect as in the first embodiment cannot be performed. Therefore, the signal is reproduced by the electromagnetic induction effect using the coil of the thin-film magnetic transducer 40. When a magneto-optical recording medium such as TbFeCo is used, the magnetization increases due to heating. Therefore, by irradiating a laser beam, the signal intensity can be increased and the CNR (Carrier to Noise Ratio) can be improved. For reproduction, a GMR sensor used for reproducing a magnetic hard disk may be separately used.

According to the fourth embodiment, since a ring-type optical resonator is used for the semiconductor laser 2, it is possible to obtain high-efficiency laser output light 8 with a small optical loss and a small size. Since the laser output light 8 can be obtained at a high rate, optically assisted magnetic recording can be performed at a high density. In the present embodiment, the magnetic gap 48 is formed on the interface 3a on the light output side. However, the magnetic gap 48 is formed on the positive electrode 28 in the same plane as the magnetic core 44, and the tip of the magnetic gap 48 is It may be formed so as to be on the same plane as 5a. Thereby, the magnetic gap 48 can be formed by the same process as the formation of the magnetic core 44, and the process can be greatly simplified. In the optically assisted magnetic recording, the longitudinal direction of the minute metal body 6 may be parallel to the track, and this configuration can increase the light use efficiency. In this optically assisted magnetic recording, recording is performed by modulating the magnetic field. Therefore, each time the magnetic field is reversed, recording is performed while the next mark is erased after the mark recorded immediately before the magnetic field is reversed. Even if the size of the laser beam is increased, the recording density is not substantially reduced.

FIG. 5 shows a semiconductor laser used for a flying head according to a fifth embodiment of the present invention.
Is a longitudinal sectional view, and FIG. 2B is a view as seen from the light output surface side. The flying head according to the fifth embodiment uses a surface-emitting type that performs laser oscillation in the direction perpendicular to the active layer as the ring-type semiconductor laser 2 in the first embodiment. The other configuration is the same as that of the first embodiment.

The ring type semiconductor laser 2 includes a substrate 21 made of GaAs, and n substrates sequentially formed on the substrate 21.
AlGaInP spacer layer 22a, AlGaInP active layer 23a, n-type AlGaInP spacer layer 22b, A
In order to form the diamond-shaped active region 4 in the semiconductor crystal 3 by limiting the position of the lGaInP active layer 23a, the n-type current confinement layer 25a, the p-type AlGaInP spacer layer 24a, and the current region and the ring-shaped optical resonator, Type current confinement layer 25a
Between the slit 25b provided in the semiconductor crystal 3 and the interface 3
c, an etching hole 21 a formed by etching in the substrate 21, a TiO ₂ protective film 29 deposited on the exposed interface 3 c, a negative electrode 27 a formed on the substrate 21, Small opening 6a at interface 3a
, A fine metal body 6 disposed at the center of the fine opening 6 a, and a protective film 29 for protecting the side surface of the semiconductor crystal 3. The slit 25b of the n-type current confinement layer 25a is formed by interrupting crystal growth and performing patterning using photolithography. The minute metal body 6 may be formed simultaneously using the same metal as the positive electrode 28a, or may be formed by depositing another metal such as Ag later.

According to the fifth embodiment, since the surface emitting laser oscillates in the direction perpendicular to the normal active layer, a standing wave is generated inside the active layer. However, in the present embodiment, since the oscillation is performed in a ring shape, a standing wave does not stand inside the ring-shaped optical resonator, and the laser light inside the ring-shaped optical resonator is The intensity is constant. Therefore, the position of the active layer 23a is not particularly limited, and a plurality of active layers 23a can be located with a reduced interval. In that case, the spacer layers 22a, 22
The carrier concentration of b, 24a, etc. may be gradually changed from the negative electrode 27a side to the positive electrode 28a side. This can dramatically increase the number of carriers that contribute to laser oscillation,
A small-sized and high-output surface-emitting ring laser can be realized.
The positional relationship of the minute metal body 6 at the interface 3a serving as the light output surface and the shape of the minute metal body 6 are the same as in the first embodiment. Further, as in the first embodiment, the protective films 29, 2
It goes without saying that the same effect as in the first embodiment can be obtained by replacing 9a with a multilayer film. In this embodiment, as in the fourth embodiment, a thin film transducer may be integrated on the surface, and similarly to the fourth embodiment, a magnetic recording medium or magneto-optical recording may be performed by light irradiation. By lowering the coercive force of the medium, high-density optically assisted magnetic recording can be performed by the magnetic field in the magnetic gap, and the same effect as in the fourth embodiment can be obtained. Also in this embodiment, similarly to the second embodiment, a metal light-shielding body having a minute opening on the interface 3a may be formed, whereby the same effect as in the second embodiment can be obtained. can get. However, since the reflectance decreases when the total reflection portion is covered with metal, it is preferable to increase the reflectance by forming a multilayer reflection film inside the reflection portion. Further, since the phase of reflected light is different between the metal film and the multilayer reflective film, it is preferable to introduce a phase adjustment layer between the two. Further, the minute opening may be of a coaxial type as in the second embodiment, whereby the same effect as in the second embodiment can be obtained.

FIG. 6 shows a semiconductor laser used for a flying head according to a sixth embodiment of the present invention. FIG. 6A is a sectional view showing a main part, and FIG. FIG. The flying head according to the sixth embodiment is different from the fifth embodiment in that a light detecting element 30a formed by using a laser crystal is provided near the light output surface of the semiconductor laser 2; The configuration is the same as that of the fifth embodiment.

The photodetecting element 30a includes an n-type crystal layer 33.
And an n-type electrode 31 joined to the outer surface thereof, a p-type spacer layer 34, and a p-type electrode 28a, and applying a reverse bias between the n-type electrode 31 and the p-type electrode 28a. To work.

According to the sixth embodiment, by irradiating the recording medium 9a of the optical disk 9 using the semiconductor laser 2 having the above-described configuration, the same recording as in the first embodiment of the present invention is performed. In addition, at the time of reproduction, it is possible to efficiently reproduce a signal by making the reflected light from the optical disk 9 incident on the photodetector 30a. Note that the photodetector 30a is similar to the second embodiment,
It may be a two-segment type (not shown) in which the minute metal body 6 is divided right and left around the position thereof. By arranging the two-segment type photodetector 30a across a recording track (not shown), it is possible to separate and detect the reflected light from the right and left of the track, and to determine the track position from the difference signal between the signals. An error signal can be formed.

FIG. 7 shows a flying head according to a seventh embodiment of the present invention. FIG. 7 (a) is a sectional view and FIG. 7 (b) is a bottom view. Flying head 1 according to the seventh embodiment
Is a floating slider 11 and a G formed on the rear end face 11a of the floating slider 11 by using a thin film process.
Magnetic sensor 5 consisting of MR (Giant Magnetic Sencer)
0, and the semiconductor laser 2 of the third embodiment in which the active layer surface is bonded to the rear end surface of the magnetic sensor 50 in a direction perpendicular to the rear surface of the slider.

The magnetic sensor 50 includes a pair of magnetic shielding films 51.
And a spin valve 53 as a magnetic field detecting portion and an electrode 52 sandwiched between a pair of magnetic shielding films 51 via insulating films 54 and 55, and are bonded to the semiconductor laser 2 by an adhesive layer 56.

The tip 53a of the spin valve 53 and the minute metal body 6 of the semiconductor laser 2 are arranged in parallel to the axial direction of the slider 11 as shown in FIG. (Not shown) can be tracked. The bottom surface of the slider 11 has a concave portion 12 for generating a negative pressure and convex portions 13 and 13a for generating a positive pressure. The balance between the concave portion 12 and a spring (not shown) attached to the head 1 allows the slider 11 to be connected to the optical disk 9. It is possible to keep the distance stable.

According to the seventh embodiment, optically assisted magnetic recording is performed on the magnetic recording film or magneto-optical recording film by the semiconductor laser 2 and the magnetic field from the magnetic gap 48 integrated therewith, and the GMR sensor is used to perform minute recording. Since the magnetic field is detected with high sensitivity, high-sensitivity and high-speed signal reproduction is possible. In addition, as the semiconductor laser 2, not only the semiconductor laser used in the third embodiment but also the semiconductor laser 2 in which the thin film transducer used in the fourth embodiment is integrated with the semiconductor laser 2 can be used. In the present embodiment, since the GMR sensor is used for signal reproduction, the semiconductor laser 2 is used only for information recording. Since heating is not performed during reproduction, a medium having a large magnetization at room temperature, such as CoCrTa or GaFeCo, is used as a recording medium. However, since the GMR sensor is vulnerable to heat, the adhesive layer 63 has a heat insulating property with an insulating layer interposed therebetween. Further, the laser light at the time of recording is pulsed for a short time. According to the present embodiment, a high sensitivity magnetic field can be detected by the GMR sensor, so that not only the recording density can be increased but also the recording and reproduction at a high transfer rate can be performed.

FIG. 8 shows a disk drive according to an eighth embodiment of the present invention. The disk device 100 includes an optical disk 9 rotated by a rotation shaft 130, a suspension 133 that supports the same flying head 1 as in the first embodiment so as to be rotatable about a rotation shaft 133 a, and a rotation of the suspension 133. And a rotary linear motor 143 to be moved.

The optical disk 9 has a phase change recording medium 9a made of GeSbTe. When the reflected light from the optical disk 9 is detected by the photodetector provided at the rear of the semiconductor laser 2 by using the self-coupling effect of the semiconductor laser, the laser beam cannot be split by the photodetector, so that a tracking error signal is formed. Uses the sample servo method. That is, a staggered mark (not shown) provided on the optical disc 9 is used, and the positional deviation is detected from the magnitude of the reflected light when the light spot passes through the left and right staggered marks.

According to the eighth embodiment, since the laser output light 8 of a very small size can be obtained at a high rate, a high density
Recording and reproduction at a high transfer rate become possible. Note that tracking is performed using a linear motor, and the semiconductor laser 2 can be attached to a flying slider via a piezoelectric element, and a servo signal can be applied to the piezoelectric element to perform tracking in a high frequency region of tracking. is there. This enables high-speed tracking.
In the case of an optical disk having a grooved recording track, the left and right reflections from the grooved recording track can be obtained by using the two-divided semiconductor laser with a photodetector of the second to fourth embodiments. The signals can be separated and detected, whereby a track position error signal can be formed, and tracking control can be performed. A GMR sensor (not shown) for detecting a signal by a magnetoresistive effect is attached to a slider using a magnetic recording medium such as CoCrTa for a magnetic hard disk or a magneto-optical recording medium such as TbFeCo or GaFeCo for the recording medium 9a. It is also possible to reproduce a recording signal. As a result, it is possible to improve the recording / reproducing phase conversion rate. Further, since the laser 2 is used only for recording and does not use re-incident light, the laser light for recording is output by increasing the reflectance of the ring type optical resonator. Can be optimized for

FIG. 9 shows a ring-type semiconductor laser according to a ninth embodiment of the present invention.
(B) is a sectional view taken along line AA in (a), (c),
(D) is the figure seen from the light output surface side. The ring semiconductor laser 2 according to the ninth embodiment differs from the ring semiconductor laser 2 according to the second embodiment in that a protective film 29 is also formed on the interface 3a of the semiconductor crystal 3 that faces the optical disk 9 to obtain a microscopic structure. The size of the opening 6a is increased, and the other configuration is the same as that of the second embodiment.

The minute opening 6a is formed so that each side is parallel or perpendicular to a recording track (not shown), as shown in FIG. It has a rectangular shape with a length of 1 μm and a width of 1.5 μm, in which TiO ₂ is embedded. The shape of the minute opening 6a may be circular or elliptical as shown in FIG. The length in the direction of the active layer 23 is 1 μm.
m or less. The length and width of the semiconductor laser 2 are, for example, 150 μm and 100 μm, respectively, but are not limited thereto, and can be further reduced. The laser light that has reached the microaperture 6a is converted into a plane wave whose wavefront is perpendicular to the end face 5a, and is output in a direction perpendicular to the end face 5a.

According to the ninth embodiment, output is performed in a small size, high efficiency, and perpendicular to the end face, suitable for not only optical recording but also optical interconnection and optical communication. A ring-type semiconductor laser can be provided. In the present embodiment, a red-emitting (wavelength: 650 nm) laser 2 using an AlGaInP-based semiconductor crystal is used as a semiconductor laser. However, the present invention is not limited to this, and blue (AlGaInN-based) 40
0 nm) laser can be of a ring oscillation type as in the present embodiment, and it may be used.

FIGS. 10A to 10D show a main part of a ring type semiconductor laser according to a modification of the ninth embodiment.

In the ring-type semiconductor laser shown in FIG. 7A, the opening 6a of the metal light-shielding film 29a has a tapered shape narrowing outward. As a result, the wavefront of the laser light inside is smoothly converted into a wavefront perpendicular to the end face 3a, so that scattering at this part is reduced,
A highly efficient ring laser can be formed.

The ring-type semiconductor laser shown in FIG. 6B has a wavelength of the internal laser light of 1 on the metal light shielding film 29a.
A protective film 29 made of SiO ₂ having a thickness of / 4 is formed. Thus, it is possible to protect the metal light-shielding film 29a and at the same time perform an anti-reflection function, so that a highly reliable and high-output ring laser can be realized.

The ring-type semiconductor laser shown in FIG. 5C has a coaxial opening formed by arranging a minute metal body 6 inside a minute opening 6a, and FIG. Is shown. The material of the minute metal body 6 is not particularly limited, but a metal having a high reflectance, such as Ag, Au, or Cu, is preferable. The size of the minute metal body 6 is one of the minute openings 6a.
About / 3 is the most preferable since the optical loss is the least. Small aperture 6
The shape of “a” may be rectangular or circular as shown in FIG. Since the micro aperture 6a does not have a cutoff wavelength with respect to the laser light as in the case of the microwave by using the coaxial type, the propagation light can be emitted regardless of the size of the micro aperture 6a. it can. In addition, since conversion can be performed smoothly by a plane wave perpendicular to the end face 3a, an efficient ring laser can be configured.

FIGS. 11A and 11B are views of a ring-type semiconductor laser according to another modification of the ninth embodiment as viewed from the light output surface. The ring-type semiconductor laser shown in FIG. 1A uses a linear diffraction grating 19 as a wavefront conversion member. This diffraction grating 19 is formed by depositing SiN on a protective film made of TiO ₂ by sputtering,
It is formed by dry-etching SiN.
By using the diffraction grating 19, the effect of wavefront conversion can be provided even if the wavelength is sufficiently larger than the wavelength of the laser light, and the laser output light 8 having a narrow divergence angle can be obtained.
Further, the structure is simple, and the design becomes easy. The ring-type semiconductor laser shown in FIG. 3B has a lens function by making the diffraction grating 19 ring-shaped, and is formed in the same manner as in FIG. By using the diffraction grating 19, the spread angle of the laser output light 8 can be further reduced. Note that a hologram formed from an organic film or the like may be used instead of the diffraction grating. In this case, the same effect as that of the diffraction grating can be obtained.

FIG. 12 shows a ring-type semiconductor laser according to a tenth embodiment of the present invention. FIG. 12 (a) is a longitudinal sectional view, and FIG. 12 (b) is a view seen from the output surface side. . This first
Embodiment 0 is the same as the ring-type semiconductor laser of Embodiment 5, except that the minute metal body 6 is omitted.
Otherwise, the configuration is the same as that of the fifth embodiment. The slit 25b of the n-type current confinement layer 25 has a length of 5 μm and a width of 10 μm.
μm.

The small opening 6a has a circular shape. The laser light that has reached the minute aperture 6a is converted into a plane wave whose wavefront is perpendicular to the end face 3a, and is output in a direction perpendicular to the end face 3a. In addition, the optical resonator obliquely crosses the active layer, and is obliquely incident on the reflection surface, so that asymmetry occurs in the active layer and the reflection surface, whereby the polarization plane of the laser light is limited to one direction, Thereby, linearly polarized laser light is obtained.

According to the tenth embodiment, a compact, high-efficiency and perpendicular to the semiconductor surface is suitable for not only optical recording but also optical interconnection and optical communication.
It is possible to provide a ring-type semiconductor laser that outputs light in a direction. In the laser of the present embodiment, the cross-sectional shape of the active region 4 is rectangular, but the side surface of the laser is etched into a cylindrical shape, and the cylindrical surface is used as a reflecting surface, so that the cross-sectional shape is circular. It is also possible to form an oscillation region. In this case, the area of the active region intersecting with the optical resonator can be increased, and higher output can be obtained. Further, in the present embodiment, A is used as a crystal for a semiconductor laser.
Red light emission using a 1GaInP-based semiconductor crystal (wavelength 6
Although the laser 2 of 50 nm was used, the present invention is not limited to this, and blue (400 nm) using an AlGaInN-based crystal was used.
m) and an InGaAs-based infrared laser can also be of a ring oscillation type as in the present embodiment. In these lasers, it is difficult to obtain a semiconductor multilayer film having a high reflectivity. However, according to the ring laser of the present embodiment, light having a high reflectivity and low light loss is used without using the semiconductor multilayer film. This is particularly preferable because a resonator can be formed.

FIGS. 13A to 13D show main parts of a ring type semiconductor laser according to a modification of the tenth embodiment.

In the ring-type semiconductor laser shown in FIG. 9A, the minute aperture 6a of the metal light-shielding film 29a has a tapered shape narrowing outward. As a result, the wavefront of the laser light inside is smoothly converted into a wavefront perpendicular to the end face 3a, so that scattering at this part is reduced and a highly efficient ring laser can be formed.

The ring-type semiconductor laser shown in FIG. 6B has a protective film 29 made of SiO ₂ having a thickness of の of the wavelength of the internal laser beam 7 formed on a metal light-shielding film 29 a. It is. Thus, it is possible to protect the metal light-shielding film 29a and at the same time perform an anti-reflection function, so that a highly reliable and high-output ring laser can be realized.

The ring-type semiconductor laser shown in FIG. 6C has a coaxial opening formed by arranging a micro metal body 6 inside a micro opening 6a, and FIG. Surface. The material of the minute metal body 6 is not particularly limited, but a metal having high reflectivity such as Ag, Au, or Al is preferable.
In addition, the size is preferably about 1/3 of the opening 6a with the least light loss. The shape of the minute opening 6a may be rectangular as shown in FIG.

When the coaxial type is used, as in the case of the microwave, the opening 6a has no cut-off wavelength with respect to the laser beam, and therefore, regardless of the size of the opening 6a.
Propagation light can be emitted. In addition, since conversion can be performed smoothly by a plane wave perpendicular to the end face 5a, an efficient ring laser can be configured.

FIGS. 14A to 14D are views of a ring-type semiconductor laser according to another modification of the tenth embodiment as viewed from the light output surface. Each of these modifications uses the diffraction grating 19 as a wavefront conversion member. The diffraction grating 19 is formed by depositing SiN on the TiO ₂ film by sputtering and then dry-etching the SiN. By using the diffraction grating 19, even if the wavelength is sufficiently larger than the wavelength of the laser light, the effect of wavefront conversion can be provided, and the laser output light 8 having a narrow divergence angle can be obtained.

The semiconductor laser shown in FIG. 7A uses a linear diffraction grating 19. According to this, the structure is simple and the design becomes easy. The semiconductor laser shown in FIG. 3B has a lens function by forming the diffraction grating 19 in a ring shape, whereby the spread angle of the laser output light 8 can be further reduced. Note that the same effect can be obtained by using a hologram formed of an organic film or the like instead of the diffraction grating 6.

The ring-type semiconductor laser shown in FIG. 9C is an example in which a pyramid-shaped prism 19 'is used as a wavefront converting member. The material of the prism 19 'is sapphire, but is not particularly limited as long as it is transparent to laser light. At the interface 3a of the semiconductor crystal, a dielectric multilayer film having a high reflectance with respect to the laser light is formed. In this way, the internal laser light can be extracted to the outside through the prism 19 '. In this example, prism 1
Since 9 ′ can be manufactured only by sticking it to the semiconductor interface 3a, a ring laser that can be easily manufactured can be formed. Although the size of the prism 19 'is sufficiently larger than the size of the laser oscillation region in order to simplify the alignment,
The size may be smaller than the size of the laser oscillation region. Thereby, a part of the internal laser light can be extracted and most of the laser light can be totally reflected, so that the multilayer reflective film is not required.

The ring-type semiconductor laser shown in FIG. 9D uses a lens 19 ″ formed of a dielectric instead of the above-mentioned small prism. This suppresses the spread of the laser output light 8. be able to.

FIG. 15 shows a ring type semiconductor laser according to an eleventh embodiment of the present invention. FIG. 15 (a) is a longitudinal sectional view, and FIG. 15 (b) is a view seen from the light output surface side. is there. The eleventh embodiment is different from the tenth embodiment in that both sides of the active layer 23, that is, on the substrate 21 and the positive electrode 2 are formed.
High reflection multilayer film 19 formed from a semiconductor multilayer film on the side of 8a
a and 19b are formed, and a phase adjustment layer 19c is formed outside the high reflection multilayer film 19b. The other components are the same as those of the tenth embodiment. However, in the present embodiment, since the laser light forms a standing wave due to reflection by the highly reflective multilayer films 19a and 19b, the active layer 23 needs to be located at a position where the electric field of the laser light becomes strong. . The phase adjusting layer 19c is made of a semiconductor for adjusting the phase of the light reflected by the metal light-shielding film 29a and the phase of the light reflected by the high-reflection multilayer film 19b. %.

According to the eleventh embodiment, the tenth embodiment
The same effect as that of the embodiment can be obtained. Further, since the high-reflection multilayer films 19a and 19b are used, it is not necessary to perform total reflection in this portion, and these high-reflection multilayer films 19a and 19b are not used.
The angle of incidence on 19b can be reduced to about 10 degrees. As a result, the light loss at the minute aperture 6a can be further reduced to a plane wave 8 in the vertical direction, as compared with the first embodiment. In that case, it is also possible to extract the laser light to the outside without using the wavefront conversion member. Furthermore, the tenth
Similarly to the tenth embodiment, various wavefront converting members shown in FIGS. 13 and 14 can be used, and the same effect as that of the tenth embodiment can be obtained. In the above embodiment, the semiconductor crystal 3 is made of AlGaI which generates red laser light.
The nP type was explained, but blue (400 nm)
May be used. The AlGaInN-based semiconductor crystal 3 is made of TiO
_Since the semiconductor laser 2 is formed on a substrate made of sapphire, GaN, SiC, etc. mixed with 2
The slider surface of the floating slider may be formed by processing the emission surface side of the substrate. Thereby, the structure and manufacturing process of the flying head can be greatly simplified.

[0075]

As described above, according to the present invention,
Since the ring-type optical resonator is used for the semiconductor laser, the output light of the semiconductor laser can be miniaturized and increased in intensity, thereby enabling higher recording density, miniaturization, and improvement in data transfer rate. it can.

[Brief description of the drawings]

FIGS. 1A and 1B show a flying head according to a first embodiment of the present invention. FIG. 1A is a longitudinal sectional view thereof, and FIG. 1B is a longitudinal sectional view of a semiconductor laser used for the flying head. FIG. 2C is a sectional view taken along line AA in FIG.

2A and 2B show a flying head according to a second embodiment of the present invention. FIG. 2A is a longitudinal sectional view of the flying head, and FIG. 2B is a longitudinal sectional view of a semiconductor laser used for the flying head. (C),
(D) is a sectional view of a principal part of the semiconductor laser.

3A and 3B show a flying head according to a third embodiment of the present invention. FIG. 3A is a longitudinal sectional view of a semiconductor laser used for the flying head, and FIG. FIG. 4 is a cross-sectional view taken along line A.

4A and 4B show a semiconductor laser of a flying head according to a fourth embodiment of the present invention, wherein FIG. 4A is a cross-sectional view, FIG. 4B is a view from the output surface side, and FIG. (c) is a front view.

FIG. 5 shows a semiconductor laser used for a flying head according to a fifth embodiment of the present invention. FIG.
FIG. 2B is a diagram viewed from the light output surface side.

6A and 6B show a semiconductor laser used for a flying head according to a sixth embodiment of the present invention. FIG. 6A is a sectional view showing a main part, and FIG. 6B is a view seen from an output surface side. It is.

7A and 7B show a flying head according to a seventh embodiment of the present invention. FIG. 7A is a sectional view and FIG. 7B is a bottom view of FIG.

FIG. 8 is a perspective view showing a disk device according to an eighth embodiment of the present invention.

9A and 9B show a ring-type semiconductor laser according to a ninth embodiment of the present invention, wherein FIG. 9A is a longitudinal sectional view, FIG. 9B is a sectional view taken along the line AA in FIG. (D) is the figure seen from the light output surface side.

FIGS. 10A to 10D are diagrams illustrating a main part of a ring-type semiconductor laser according to a modification of the ninth embodiment; FIGS.

FIGS. 11A and 11B are diagrams of a ring-type semiconductor laser according to another modification of the ninth embodiment, as viewed from the light output surface.

FIGS. 12A and 12B show a ring-type semiconductor laser according to a tenth embodiment of the present invention. FIG. 12A is a longitudinal sectional view, and FIG. 12B is a view seen from the output surface side.

FIGS. 13A to 13D are views showing a main part of a ring-type semiconductor laser according to a modification of the tenth embodiment; FIGS.

FIGS. 14A to 14D are diagrams as viewed from the light output surface of a ring-type semiconductor laser according to another modification of the tenth embodiment.

FIGS. 15A and 15B show a ring-type semiconductor laser according to an eleventh embodiment of the present invention. FIG. 15A is a longitudinal sectional view, and FIG. 15B is a view seen from the light output surface side.

FIG. 16 shows a flying head using a conventional semiconductor laser with openings.

FIG. 17 shows a conventional self-coupled semiconductor laser having an opening for a flying head.

FIG. 18 shows a shape near an output surface of a conventional self-coupled semiconductor laser with an aperture and a change in intensity of output light.

FIG. 19 shows the aperture size dependence of the output of a conventional self-coupled semiconductor laser with an aperture.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Floating head 2 Ring type semiconductor laser 3 Semiconductor crystal 3a-3d interface 4 Active region 5a-5d interface 6 Micro metal body 6a Micro opening 7 Laser light 8 Laser output light 9 Optical disk 9a Recording medium 9b Substrate 11 Floating slider 11a Rear end face 11b Slider surface 12 Concave part 13 Convex part 28a Positive electrode 19 Diffraction grating 19 Diffraction grating 19 'Prism 19 "Lens 19a, 19b High reflection multilayer film 21 Substrate 21a Etching hole 22, 24 Cladding layer 22a, 22b Spacer layer 23, 23a Active layer 24a Spacer layer 25, 25a Current blocking layer 25b Slit 26 Cap layer 27 Negative electrode 27a Negative electrode 28, 28a Positive electrode 29 Protective film 29a Metal light shielding film 30, 30a Photodetector 31 Electrode 32 Ion implantation layer 33 Crystal layer 34 type spacer 35 Phase adjustment layer 40 Thin film magnetic transducer 41, 42 Dielectric film 43a Coil lower part 43b Coil upper part 44 Magnetic core 46 Yoke part 46a Yoke extension part 47 Magnetic pole part 47a Magnetic pole tip part 48 Magnetic gap 49 Lead wire 49a Electrode pad 50 Magnetic sensor 51 Magnetic shield film 52 Electrode 53 Spin valve 53a Tip 54,55 Insulating film 56 Adhesive layer 63 Adhesive layer 100 Disk device 111a Rear end 110a High reflective multilayer film 110c High reflective multilayer film 110b Low reflective multilayer film 130 Rotating shaft 133 Suspension 133a Rotating shaft 143 Rotary linear motor θ ₁ , θ ₂ Incident angle

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) G11B 5/02 G11B 5/02 T 5F073 5/39 5/39 7/125 7/125 A 7/13 7 / 13 7/135 7/135 Z 11/10 502 11/10 502Z 11/105 561 11/105 561E 566 566C 566E 21/21 101 21/21 101Z F-term (reference) 2H049 AA12 AA14 AA37 AA57 CA11 CA15 CA17 CA28 5D034 BA02 BB01 CA06 5D075 AA03 CD06 CF03 5D091 AA08 CC24 HH20 5D119 AA10 AA11 AA22 AA24 AA43 BA01 CA06 DA01 DA05 FA05 FA16 FA18 MA06 NA04 NA07 5F073 AA66 BA05 CA06 CB02 DA22 EA24

Claims (56)

[Claims] 1. A semiconductor laser having a ring-shaped optical resonator that performs laser oscillation by reflecting at a plurality of interfaces, wherein a laser beam generated by the laser oscillation is reflected at one of the plurality of interfaces. A semiconductor laser comprising a minute metal body formed at a position. 2. The semiconductor laser according to claim 1, wherein said minute metal body is formed on an outer surface of said one interface. 3. The semiconductor laser according to claim 1, wherein a dielectric film or a dielectric multilayer film is formed on outer surfaces of said plurality of interfaces. 4. A structure in which a dielectric film or a dielectric multilayer film is provided on said one interface, and wherein said minute metal body is formed by being embedded in said dielectric film or said dielectric multilayer film. Item 2. The semiconductor laser according to item 1. 5. The semiconductor laser according to claim 1, wherein said minute metal body has a configuration smaller than a size of laser light at said one interface. 6. The semiconductor laser according to claim 1, wherein said optical resonator is formed in a direction parallel to an active layer formed in parallel with a semiconductor substrate. 7. The semiconductor laser according to claim 6, wherein the active layer has a region in which the laser oscillation is formed by limiting a current region by a current confinement layer. 8. The semiconductor laser according to claim 6, wherein said minute metal body has a rectangular, elliptical or elliptical shape, and a longitudinal direction thereof is formed in a direction perpendicular to said active layer. . 9. The semiconductor laser according to claim 1, wherein said optical resonator is formed so as to cross an active layer formed in parallel with a semiconductor substrate. 10. The semiconductor laser according to claim 9, wherein a plurality of said active layers are formed. 11. The semiconductor laser according to claim 9, wherein said plurality of interfaces include an interface formed by removing said semiconductor substrate by etching. 12. The semiconductor laser according to claim 9, wherein said active layer has an active region defined by a structure for narrowing a current. 13. A semiconductor laser having a ring-shaped optical resonator that performs laser oscillation by reflecting at a plurality of interfaces, wherein a laser beam generated by the laser oscillation is reflected at one of the plurality of interfaces. A semiconductor laser comprising a metal light-shielding body having a minute opening formed at a position where the light-shielding member is formed. 14. The semiconductor laser according to claim 13, wherein said fine aperture has a tapered shape whose cross section becomes smaller outward. 15. The semiconductor laser according to claim 13, wherein said metal light-shielding member has a minute metal member disposed at the center of said minute opening. 16. A semiconductor laser having a ring-shaped optical resonator that performs laser oscillation by reflecting at a plurality of interfaces, wherein a laser beam generated by the laser oscillation is reflected at one of the plurality of interfaces. A semiconductor laser having a wavefront conversion member formed at a position where the laser light is reflected and the laser light is emitted to the outside while preventing reflection of the laser light. 17. The semiconductor laser according to claim 16, wherein said wavefront converting member has a size equal to or smaller than a laser wavelength inside said semiconductor laser. 18. The semiconductor laser according to claim 16, wherein said wavefront conversion member is formed by a slit having one side longer than a wavelength of said laser light. 19. The semiconductor laser according to claim 16, wherein said wavefront converting member is formed of a metal film having a center of a minute opening or a dielectric multilayer film. 20. The semiconductor laser according to claim 19, wherein said minute aperture has a tapered shape whose cross section becomes smaller outward. 21. The semiconductor laser according to claim 19, wherein said wavefront conversion member has a minute metal body at the center of said minute opening. 22. The semiconductor laser according to claim 16, wherein said wavefront conversion member is formed from a diffraction grating. 23. The semiconductor laser according to claim 16, wherein said wavefront converting member is formed from a hologram. 24. The semiconductor laser according to claim 22, wherein said wavefront converting member is formed in a straight line. 25. The wavefront conversion member according to claim 22, wherein the wavefront conversion member is formed concentrically so as to have a lens effect.
3. The semiconductor laser according to 3. 26. A semiconductor laser having a ring-shaped optical resonator formed so as to cross an active layer formed in parallel with a semiconductor substrate and reflecting at a plurality of interfaces to perform laser oscillation, wherein the semiconductor laser is generated by the laser oscillation. And a wavefront conversion member that is formed at a position where the laser light to be reflected is reflected at one of the plurality of interfaces, and that reflects the laser light and emits the laser light to the outside. Semiconductor laser. 27. The semiconductor laser according to claim 26, wherein a plurality of said active layers are formed. 28. The semiconductor laser according to claim 26, wherein said active layer has a structure in which a region for performing said laser oscillation is formed by defining a current region by a current confinement layer. 29. The semiconductor laser according to claim 28, wherein said laser oscillation region is formed concentrically. 30. The semiconductor laser according to claim 28, wherein said laser oscillation region is formed in a sheet shape. 31. The semiconductor laser according to claim 26, wherein a semiconductor or a dielectric film is formed on outer surfaces of said plurality of interfaces. 32. A multi-layer dielectric film or a multi-layer semiconductor film comprising:
27. A structure formed on outer surfaces of the plurality of interfaces.
A semiconductor laser as described in the above. 33. The semiconductor laser according to claim 26, wherein said plurality of interfaces include an interface formed by removing a semiconductor substrate by etching. 34. The semiconductor laser according to claim 26, wherein said wavefront converting member is made of a dielectric or semiconductor having a conical or pyramid shape. 35. The semiconductor laser according to claim 26, wherein said wavefront converting member is made of a dielectric or semiconductor having a spherical or aspherical shape. 36. A flying head floating by an air flow caused by rotation of a disk, comprising: a semiconductor laser having a ring-shaped optical resonator that reflects laser light at a plurality of interfaces to perform laser oscillation. 37. A semiconductor laser comprising: a minute metal body formed at a position where a laser beam generated by the laser oscillation is reflected at one of the plurality of interfaces facing the disk. The flying head according to claim 36. 38. The flying head according to claim 36, wherein the semiconductor laser is provided by bonding a side surface including an electrode for driving the semiconductor laser to a surface of the flying slider on the downstream side of the airflow. 39. The semiconductor laser according to claim 36, wherein a side surface not including an electrode for driving the semiconductor laser is bonded to a surface of the floating slider on the downstream side of the airflow.
The flying head as described. 40. The flying head according to claim 36, wherein the semiconductor laser has a surface on which a floating force is generated on a surface facing the disk. 41. A flying head floating by an air flow caused by rotation of a disk, comprising: a semiconductor laser having a ring-shaped optical resonator that reflects at a plurality of interfaces to perform laser oscillation; and a laser generated by the laser oscillation of the semiconductor laser. A minute metal body formed at a position at which one of the plurality of interfaces is reflected at one of the interfaces facing the disk, and a laser beam near the one interface at which the minute metal body is formed. A flying head comprising: a photodetector formed using a crystal. 42. A structure in which the photodetector is formed by being divided into two parts around the position of the minute metal body.
1. The flying head according to 1. 43. A floating head, which flies by an air flow caused by rotation of a disk, comprising: a semiconductor laser having a ring-shaped optical resonator that performs laser oscillation by reflecting at a plurality of interfaces; and a magnetic head including a core that forms a magnetic gap. A flying head comprising: a circuit; and a thin film magnetic transducer having a coil wound around the core. 44. A flying head according to claim 43, wherein said magnetic gap is formed at a position where a laser beam generated by said laser oscillation is reflected at one of said plurality of interfaces. 45. The semiconductor laser according to claim 31, further comprising: a minute metal member formed at a position where a laser beam generated by the laser oscillation is reflected at one of the plurality of interfaces. The magnetic gap is
The flying head according to claim 43, wherein the flying head is formed near the minute metal body. 46. A structure according to claim 4, wherein said magnetic gap is disposed downstream of said air flow with respect to said minute metal body.
5. The flying head according to 5. 47. The structure of claim 43, wherein said coil and said core of said thin-film magnetic transducer are formed on a side surface on which electrodes for driving a semiconductor laser are formed.
The flying head as described. 48. The flying head according to claim 43, wherein the magnetic gap of the thin-film magnetic transducer is formed so as to be laminated on the side surface on which the electrode of the semiconductor laser is formed. 49. A structure according to claim 43, wherein said magnetic gap is arranged perpendicular to a recording track of said disk.
The flying head as described. 50. A structure according to claim 43, wherein said magnetic gap is arranged in parallel with a recording track of said disk.
The flying head as described. 51. A flying head according to claim 45, wherein a signal is reproduced by using said thin-film magnetic transducer. 52. A flying head, which floats by an air flow due to rotation of a disk, comprising: a flying slider that generates a floating force by the air flow; Using a semiconductor laser having a ring-shaped optical resonator for performing laser oscillation, a magnetic circuit including a core forming a magnetic gap, a thin-film magnetic transducer having a coil wound around the core, and a magnetoresistive effect And a magnetic sensor for detecting a magnetic field. 53. A flying head, which floats by an air flow due to rotation of a disk, comprising: a flying slider that generates a floating force by the air flow; A semiconductor laser having a ring-shaped optical resonator for performing laser oscillation, a magnetic circuit including a core forming a magnetic gap, and a thin-film magnetic transducer having a coil wound around the core; A flying head comprising: a photodetector formed by using a laser crystal in the vicinity of one interface facing the disk. 54. A flying head according to claim 53, wherein said light detecting element is formed by being divided into two parts. 55. A disk comprising: a disk on which a recording medium is formed; rotating means for rotating the disk; and a semiconductor laser having a ring-shaped optical resonator for reflecting a plurality of interfaces to perform laser oscillation. A flying head that floats by an airflow caused by rotation of the disk; a scanning unit that scans the flying head against the disk; and a device that controls the semiconductor laser and the scanning unit to record information on the recording medium of the disk. And a control means for performing reproduction. 56. A control device according to claim 5, wherein said control means turns on said semiconductor laser during recording or reproduction.
6. The disk device according to 5.