JP2001313295A - Pattern formation method - Google Patents

Abstract

(57) [Problem] To provide a process capable of easily peeling and patterning a metal film on a base pattern at low cost. In a state where a base pattern (aluminum thin film) 3 and an insulating film 4 are exposed on a silicon substrate 1, surface modification is performed by plasma processing (F conversion), and the base pattern 3 is formed.
In this case, the separation on the surface of the insulating film portion is facilitated without causing the separation of the metal film. A metal film is formed on the silicon substrate 1, and a stress adjustment film for adjusting stress applied to the interface between the metal film and the base is formed on the metal film.
The metal film on the insulating film 4 is removed while leaving the metal film on the base pattern 3.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a pattern forming method, and more particularly, to a technique for patterning a metal film on a desired region on a substrate.

[0002]

2. Description of the Related Art As a method of forming a metal electrode of a semiconductor device, a pattern forming method using photolithography is well known, and an electrode can be formed in a desired region. Further, as another method, when forming an under bump metal (hereinafter, referred to as a UBM film) for a Cu bump in a flip chip process, a UBM film is formed by an adhesive sheet by utilizing a difference in adhesion between a protective film and a base electrode. Has also been proposed (Japanese Patent Laid-Open No. 10-64912).

[0003]

However, in the above-described pattern forming method using photolithography,
There is a problem that equipment and process costs in the photolithography and etching steps are very high. In addition, regarding the method of selectively removing the UBM film with a pressure-sensitive adhesive sheet, it is difficult to apply the method to a highly reducing metal (a metal having a strong adhesive force), and there is a demand for more stable peeling. is there.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a process capable of easily peeling off and patterning a metal film on a base pattern at low cost.

[0005]

According to the pattern forming method of the present invention, a metal film is formed on a substrate from a state where a base pattern and an insulating film are exposed on the substrate. . At this time, the adhesion between the underlying pattern and the metal film, and the adhesion between the insulating film and the metal film are strong, and the metal film is peeled from the underlying pattern and the metal film from the insulating film. You are in a state where you cannot do it. On the other hand, in the base pattern, by adding a step of facilitating separation on the surface of the insulating film without causing separation of the metal film, a range in which the adhesion between the insulating film and the metal film can be separated. Down to Then, the metal film on the insulating film is peeled off, leaving the metal film on the base pattern.

[0006] As a result, it is possible to avoid extremely high equipment and process costs in the photolithography and etching steps as in the conventional method using photolithography, and to selectively convert the conventional UBM film using an adhesive sheet. Peeling can be performed more stably than the removing method. In this way, the metal film can be patterned on the underlayer pattern easily and at low cost.

As an additional step (a step of facilitating separation at the surface of the insulating film portion), the surface is modified in a state where the underlying pattern and the insulating film are exposed on the substrate, as described in claim 2. And a step of forming a metal film that is hardly oxidized in a state where the base pattern and the insulating film are exposed on the substrate, as described in claim 8, as described in claim 12,
A step of forming a silicon oxide film on the insulating film from a state where the base pattern and the insulating film are exposed on the substrate may be used. The total stress is a value obtained by multiplying the film thickness by the internal stress (total stress = film thickness × internal stress).

Further, according to claims 5, 10, and 13,
In addition to the function of the invention according to claim 1, a stress adjusting film for adjusting stress applied to an interface between the metal film and the base is formed on the metal film, and the stress adjusting film forms an insulating film and a metal. The adhesion between the film and the film is reduced to a range where the film can be peeled off.
Then, the metal film on the insulating film is peeled off, leaving the metal film on the base pattern. Thereby, the effect of the invention described in claim 1 is further exhibited.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) A first embodiment of the present invention will be described below with reference to the drawings.

FIGS. 1 and 2 show a process of forming a circuit pattern in the present embodiment. In the present embodiment, the present invention is applied to pattern formation in a circuit using a semiconductor device generally called a power element.

First, as shown in FIG. 1A, a silicon substrate 1 as a semiconductor substrate is prepared. Then, a transistor element (not shown) is formed on the silicon substrate 1 in a wafer state by using a general semiconductor device manufacturing technique.
Further, an insulating film 2 is formed on the silicon substrate 1 by a CVD method or the like. This insulating film 2 is made of BPSG (BoronPho
shorus Silicate Glass) film and PSG (Phoshorus)
(Silicate Glass) film. Further, an opening 2a is formed in the insulating film 2 by photolithography in order to obtain conduction with the inside of the silicon substrate (bulk portion). Then, an aluminum thin film 3 is formed on the insulating film 2 including the opening 2a by using a sputtering method or a vapor deposition method.
To form Thereafter, unnecessary portions of the aluminum thin film 3 are removed by a photolithography technique. The aluminum thin film 3 thus left becomes a base of a circuit pattern constituting an electrode portion and a wiring portion of an element such as a transistor (the aluminum thin film 3 becomes a base pattern).

Further, a heat treatment is performed to
And the aluminum thin film 3 to obtain good conduction.
In addition, the silicon substrate 1 and the underlying pattern (aluminum thin film)
In order to prevent alloy spikes due to the interaction between the substrate 1 and the aluminum thin film 3, a metal layer called a barrier metal may be formed between the substrate 3 and the aluminum thin film 3.

Thereafter, as shown in FIG. 1B, a protective film 4 is formed by coating or the like. This protective film 4 is made of a polyimide film or the like. Further, an opening 4a is formed in the protective film 4 by photolithography in order to obtain conduction with the aluminum thin film 3.

In this way, the underlying pattern (aluminum thin film) 3 and the protective film (insulating film) 4 are exposed on the silicon substrate 1. Subsequently, the process proceeds to a surface modification step in a state where the underlying pattern 3 and the protective film 4 are exposed on the silicon substrate 1. Specifically, as shown in FIG. 1 (c), CF is further placed on the silicon substrate 1 in a wafer state.
The outermost surfaces of the protective film 4 and the underlying pattern (aluminum thin film) 3 are fluorinated (fluorinated) by a plasma treatment using a mixed gas of 4 and oxygen (O2). The plasma processing gas is not CF4 but may be another CF-based gas such as CHF3. FIG. 3 shows a schematic configuration of an apparatus for performing this surface modification treatment.

In FIG. 3, a reaction chamber (chamber) 9 in which a surface modification treatment is performed has an inlet 9a through which gas is introduced.
Is provided, and an exhaust port 9b is provided via a turbo pump 10 for exhaust pressure reduction. Electrode plates 11 for applying a high-frequency voltage to upper and lower surfaces inside the reaction chamber 9.
a and 11b are arranged. These electrode plates 11a,
A high-frequency output is applied from a high-frequency power supply 12 between 11b. A silicon wafer 13 as a semiconductor substrate to be surface-modified is placed on the lower electrode 11b. Further, a magnet 14 is arranged on the outer peripheral portion of the reaction chamber 9 so that a magnetic field acts on the inside of the reaction chamber 9 to generate plasma.

In the above-described surface reforming apparatus, when the silicon wafer 13 is started with the silicon wafer 13 mounted on the electrode 11b in the reaction chamber 9, the inside of the reaction chamber 9 is evacuated by the turbo pump 10 and evacuated. In this state, a predetermined amount of gas is introduced from the inlet 9a. Then, a high-frequency output is applied between the electrodes 11 a and 11 b by the high-frequency power supply 12, and a magnetic field is generated by the magnet 14. In this state, plasma is generated in the reaction chamber 9, and the surface of the silicon wafer 13 is modified by the plasma.

In this case, the surface modification treatment is performed by using a CF-based gas,
Alternatively, when a mixed gas such as a CF-based gas and oxygen is used, the outermost surfaces of the underlying pattern (aluminum thin film) 3 and the protective film 4 are fluorinated (fluorinated) as shown in FIG.
Is done. By this surface modification, the adhesion between the protective film 4 and a metal film (member indicated by reference numeral 5 in FIG. 2A) is reduced to a range where the metal film 5 can be peeled off in the subsequent steps. It can be easily separated from the protective film 4.

Returning to the description of the circuit pattern forming process, successively, as shown in FIG. 2A, metal films 5, 6, and 7 are sequentially formed on the silicon substrate 1 in a wafer state. FIG. 4 shows an enlarged view of the metal films 5, 6, and 7.

In FIG. 4, a metal film 5 as a first layer
Is a film for forming a good bond with the base pattern (aluminum thin film) 3, and specifically, a titanium thin film is used. Instead of the titanium thin film, another metal film that achieves the above-mentioned object, for example, vanadium, chromium, cobalt, zirconium, aluminum, tantalum, tungsten, or a nitride of these metals or these metals as a main component An alloy or the like may be used. In addition, since an oxide film is usually formed on the underlying pattern (aluminum thin film) 3, when forming another metal film on the aluminum thin film, the above-described step of removing the oxide film is generally required. Becomes However, when a titanium thin film is used as the first metal film as in the present embodiment, titanium reduces the above-mentioned oxide film and oxidizes itself, whereby a good interface can be formed. The film removing step can be omitted. That is,
By forming the metal film 5 in contact with the base pattern 3 as a metal film having a high reducibility, the oxide film removing step can be omitted.

In FIG. 4, a metal film 6 as a second layer is formed.
Is a film (stress adjusting film) for adjusting the stress applied to the interface between the metal film 5 and the underlying substrate 1 (protective film 4). Specifically, a nickel thin film is used. Note that, instead of the nickel thin film, another metal film that achieves the above-described purpose, for example, copper, palladium, or an alloy containing these metals as a main component may be used. The metal film 6 allows the metal film 5 to be easily separated from the protective film 4 by reducing the adhesion between the protective film 4 and the metal film 5 to a range where the metal film 5 can be separated in the subsequent steps. . Here, the laminated film of the metal film 5 and the metal film (stress adjusting film) 6 has a total stress (Total Stress) of 30 N obtained by multiplying the film thickness by the internal stress (total stress = film thickness × internal stress). / M or more.

In FIG. 4, a metal film 7 serving as a third layer is formed.
Is a film having good solder wettability, specifically, gold (A
u). In addition, instead of gold (Au), other metal films that achieve the above-mentioned objects, such as copper, silver, platinum, iron,
Tin, a Cu—Sn alloy, or the like may be used. The metal film 7 can be omitted when a metal having good solder wettability such as nickel is used for the metal film 6. However, oxidation of the nickel surface deteriorates solder wettability,
It is desirable to use the metal film 7.

The above-mentioned three metal films 5, 6, 7 are formed by a sputtering apparatus capable of continuous film formation in a vacuum without being exposed to the atmosphere as shown in FIG. That is, the vacuum chamber 15 is provided with a wafer inlet 16 at one end and a wafer outlet 17 at the other end. Further, the chamber metal 15 has a first metal film target 18 and a second metal film Target 19 and a third metal film target 20 are arranged. Then, the films 5, 6, and 7 can be sequentially formed while transferring the wafer in the vacuum chamber 15. Further, a control panel 21 is arranged near the vacuum chamber 15. By using the apparatus shown in FIG. 5, it is possible to form a film without forming an oxide film between the metal films.
7 behaves like one metal film.

It should be noted that, even if the apparatus is not the apparatus having the shape shown in FIG. 5, as long as it can be transported without breaking vacuum, it can be realized in a different sputtering apparatus or vapor deposition apparatus.

After the above-mentioned metal films 5, 6, and 7 are formed, the wafer-like silicon substrate 1 is taken out from the sputtering apparatus shown in FIG. 5, and the wafer-like silicon substrate 1 is fixed with a vacuum chuck or the like. As shown in b), an adhesive sheet (adhesive film) 8 is attached on the metal film 7 so that no gap is formed.

Next, the adhesive sheet 8 is gently peeled off from the wafer-like substrate 1 as shown in FIG.
As shown in (c), unnecessary portions of the metal films 5, 6, and 7 are removed from the semiconductor device. That is, as shown in FIG. 7, the metal films 5, 6, 7 on the protective film (insulating film) 4 are removed (peeled) from the wafer-like substrate 1, but are removed on the underlying pattern (aluminum thin film) 3. The metal films 5, 6, and 7 remain on the wafer-like substrate 1. In this way, unnecessary portions of the metal films 5, 6, 7 are easily removed from the substrate 1 (semiconductor device).

In FIG. 6, the pressure-sensitive adhesive sheet 8 is cut into the same shape as the wafer-shaped silicon substrate 1 in order to facilitate transportation and temporary storage of the wafer-shaped substrate 1. When there is no need to carry or temporarily store, the shape of the pressure-sensitive adhesive sheet 8 does not need to be the same shape as the wafer-like substrate 1 and is larger than the wafer-like substrate 1.
In addition, there is no problem with a circle or a square. In particular, when there is no need to temporarily store, it is preferable that the size is larger than the wafer-like substrate 1 because it is easy to peel off.

The principle of peeling is as follows.
Titanium, which is the first metal film 5 of the present embodiment, forms a good bond not only with aluminum but also with the protective film 4. For this reason, it is usually difficult to peel off between the protective film 4 and the titanium thin film 5. However, the formation of titanium thin film 5
The adhesion of the protective film 4 to the base film (aluminum thin film) 3 can be reduced, and the degree of the decrease in the adhesion to the titanium thin film 5 is low. Further, as shown in FIG. 4, when a nickel thin film 6 is formed on the titanium thin film 5, a large film stress (tensile stress) is formed inside the nickel thin film 6 due to a difference between the rigidity and the thermal expansion coefficient at the time of film formation. ) Occurs. At this time, the thickness of the titanium thin film 5 is set to 50
When the thickness is set to 0 nm or less and the oxide film is not formed between the titanium thin film 5 and the nickel thin film 6 as described above,
The influence of the stress extends to the interface between the titanium thin film 5 and the protective film 4,
The adhesion between the titanium thin film 5 and the protective film 4 is reduced to a range where it can be peeled off.

Thus, the adhesion (adhesion) of the base material
By using the difference between the above and the internal stress of the metal thin film (5, 6, 7), a desired electrode / wiring material can be stably peeled off only on the protective film 4.

FIG. 8 shows the results of the tape peeling test. Since a titanium thin film frequently used as an electrode / wiring material has high adhesion to polyimide (protective film 4), no peeling occurred even when a peeling test was performed using an adhesive tape. However, 30N / m
The nickel thin film (6) is laminated to apply the total stress of
The i / Ti / polyimide structure enables peeling with an adhesive tape. That is, in addition to the effect of the surface modification, a tensile stress exists in the sputtered Ni film, and the tensile stress generates a high tensile stress at the interface between the titanium thin film and the underlayer, so that separation at the Ti / polyimide interface becomes possible.

9 and 10 show the results of the XPS outermost surface analysis. FIG. 9 shows the analysis result before the surface modification, and FIG. 10 shows the analysis result after the surface modification. 9 and 10
It can be seen from the result that the peak of C was shifted to the higher energy side (the left side in FIGS. 9 and 10) by the surface modification, indicating that the polyimide surface was converted to F. That is, in FIG.
Or, it has a CH peak, and in FIG. 10, it has a CF3 or CF2 peak. By making the polyimide surface F-like, the releasability of the titanium thin film is increased.

FIG. 11 shows the measurement results of the peeling rate of the pressure-sensitive adhesive tape when the total stress was changed when the titanium thin film (5) was used. That is, the results of measuring the adhesive force between the titanium thin film 5 and the protective film (polyimide) 4 and the adhesive force between the titanium thin film 5 and the aluminum thin film 3 are shown. In this case, the surface modification using CF4 and O2 gas is used. FIG. 11 shows that separation can be caused at 30 N / m on the polyimide film. On the other hand, it can be seen that no delamination occurs even at 100 N / m on the surface of the aluminum thin film without the pretreatment (surface modification). Therefore, for example, when a total stress of 100 N / m is used, if the peeling is performed using an adhesive tape after the film formation, the titanium thin film can be selectively left on the surface of the aluminum thin film without pretreatment.

As described above, the adhesion between the metal film 5 and the protective film 4 is smaller than the adhesion between the metal film 5 and the aluminum thin film 3.
When the metal film 5 is peeled off using the adhesive sheet 8 at a total stress of 30 N / m or more, the metal film 5 is peeled off from the protective film 4 but remains on the aluminum thin film 3.

Here, the total stress of the laminated film of the film 5 and the film 6 is:
It can be controlled mainly by the thickness of the nickel film 6. The higher the total stress value, the more advantageous in peeling off the protective film 4.
However, when the stress is 1500 N / m or more, the wafer may be warped, and in some cases (such as when the wafer thickness is small), the wafer may be damaged. It is preferable to control within. As described above, by controlling the total stress to 1500 N / m or less, it is possible to prevent problems such as warpage and breakage of the wafer after film formation.

As described above, this embodiment has the following features. (A) As a method of forming a circuit pattern, as shown in FIG. 1C, plasma processing is performed in a state where a base pattern (aluminum thin film) 3 and an insulating film (protective film) 4 are exposed on a silicon substrate 1. The surface modification was performed to include a step of facilitating peeling on the surface of the insulating film portion without causing peeling of the metal film 5 in the base pattern 3. That is, when the metal film 5 is formed on the silicon substrate 1 from the state where the underlying pattern 3 and the insulating film 4 are exposed on the silicon substrate 1, the gap between the underlying pattern 3 and the metal film 5 is increased. The adhesive force and the adhesive force between the insulating film 4 and the metal film 5 are strong, and the metal film 5 from the base pattern 3 and the insulating film 4
While the metal film 5 cannot be peeled from the base pattern 3, the base pattern 3 does not cause the metal film 5 to peel off, and a step of facilitating the peeling on the surface of the insulating film portion is added. In addition, the adhesion between the insulating film 4 and the metal film 5 is reduced to a range where it can be separated. And the adhesive sheet 8
Then, the metal film 5 on the insulating film 4 is peeled off while leaving the metal film 5 on the underlying pattern 3. In this way, it is possible to prevent the equipment and process costs in the photolithography and etching steps from becoming extremely high as in the method using conventional photolithography, and to remove the conventional UBM film selectively with an adhesive sheet. The peeling can be performed more stably as compared with the method of performing the peeling. As a result, the metal film can be easily patterned at low cost on the underlying pattern. (B) In addition to the surface modification, the stress adjustment film 6 for adjusting the stress applied to the interface between the metal film 5 and the base is formed on the metal film 5, so that the separation is easier. Thus, the metal film can be patterned on the underlying pattern at a lower cost. (C) At this time, the laminated film of the metal film 5 and the stress adjusting film 6
When the total stress is 30 N / m or more, it becomes practically preferable. (Second Embodiment) Next, a second embodiment will be described with reference to the first embodiment.
The following description focuses on the differences from this embodiment.

12 and 13 show the steps of manufacturing the diode according to the present embodiment. In the first embodiment, the example in which the base pattern 3 is an aluminum thin film and the metal film 5 is formed thereon has been described. However, in the present embodiment, the impurity diffusion region (base) in the silicon substrate 50 which is a semiconductor substrate is shown. The metal film 60 is disposed on the pattern 51 for use, and the metal film 5 is formed thereon. The details will be described below.

First, as shown in FIG. 12A, an N-type impurity diffusion region 51 is formed on a P-type silicon substrate 50 by using a general semiconductor device manufacturing technique. This allows
A diode having a PN junction is formed. Then, an insulating film 2 similar to that shown in the first embodiment is formed,
The opening 52 is formed by photolithography.
Further, the natural oxide film formed in the opening 52 is removed by hydrofluoric acid or the like.

Thereafter, with the underlying pattern 51 and the insulating film 2 exposed on the silicon substrate 1, as shown in FIG.
5, 6, and 7 are sequentially formed. Metal film 60 as first layer
Is a metal that does not easily oxidize, and specifically uses gold (Au). Note that, instead of gold (Au), another metal film that achieves the above-described object, such as silver or platinum, may be used.

Subsequently, the electrode 5 is formed on the back surface of the silicon substrate 50.
Form 3 Further, as shown in FIG. 12C, an adhesive sheet 8 is attached. Then, the adhesive sheet 8 is peeled off from the wafer-like substrate 50 by a method similar to the method shown in FIGS. Then, as shown in FIG. 13A, the metal films 60, 5, 6, and 7 are left in the openings 52 (on the base pattern 51) of the insulating film 2, and the metal films 60,
5, 6, 7 can be peeled off.

Then, as shown in FIG. 13B, soldering is performed on the entire surfaces of the metal films 60, 5, 6, and 7,
The solder 54 is mounted. Further description will be made with reference to FIG. FIG. 14 shows the measurement results of the adhesive force between the titanium thin film 5 and the insulating film 2 by a scratch test. The horizontal axis in FIG. 14 shows the Au film thickness (the thickness of the metal film 60), and the vertical axis shows the peeling strength. The titanium thin film 5 and the insulating film ( The results of the measurement of the adhesive force between SiO2) 2 and the adhesive force when the Au film 60 is inserted between the titanium thin film 5 and the insulating film 2 are shown. The peel strength is 100 m on the silicon oxide film (Au film thickness = 0).
N or more, but could be reduced to 50 mN or less when the Au film thickness was 2 nm. Therefore, when the Au film 60 is inserted and peeled off using the adhesive sheet 8, the insulating film 2 is removed.
The titanium thin film 5 can be easily peeled from above, and can be left on the other underlying patterns 51.

On the other hand, if the thickness of the Au film is too large, the strength deteriorates in a strength test after soldering.
Need to be thinner. That is, as the metal film 60 that is not easily oxidized, a gold or platinum film having a thickness of 2 to 50 nm is preferably used.

In the present embodiment, the total stress of the laminated film of the metal film 5 and the stress adjusting film 6 is 30 N / m or more. (Third Embodiment) Next, the third embodiment will be described in the second embodiment.
The following description focuses on the differences from this embodiment.

FIG. 15 shows a part of a circuit in which a plurality of elements are formed on the silicon substrate 1 around the part, not the part shown in FIG. First, as shown in FIG. 15A, a silicon nitride (Si3 N4) film 71 as an insulating film is formed in a predetermined region on the silicon substrate 1 on which the insulating film 70 has been formed. This is the underlying pattern. Further, a base pattern 71 is formed on the silicon substrate 1.
15 (b) and FIG.
As shown in (c), a TEOS-SiO2 film (silicon oxide film) 72 is formed. After that, T
A predetermined area of the EOS-SiO2 film 72 is opened, and metal films 5, 6, and 7 serving as circuit patterns are formed.

Further, an adhesive sheet is stuck on the metal film 7. Then, the adhesive sheet is peeled off from the wafer-like substrate 1 by a method similar to the method shown in FIGS. Then, as shown in FIG. 15D, the base pattern 71 (TEO
The metal films 5, 6, 7 on the silicon oxide film 72 can be peeled off, leaving the metal films 5, 6, 7 on the (opening of the S-SiO2 film).

Further description will be made with reference to FIG. FIG. 16 shows the releasability between the titanium thin film 5 and the SiN film 71, and the titanium thin film 5 and the TEOS-SiO2 film 72.
It shows releasability from The peeling rate between the titanium thin film 5 and the SiN film 71 is 0%, and the titanium thin film 5 and the TEOS-Si
The peeling rate from the O2 film 72 was 100%. Therefore, when the TEOS-SiO2 film 72 is formed on the insulating film 70 and peeled off using an adhesive sheet, the TEOS-SiO2 film 72 is removed.
The titanium thin film 5 can be easily peeled off from the SiO2 film 72, and remains on the SiN film 71.

In this embodiment, the laminated film of the metal film 5 and the stress adjusting film 6 has a total stress of 60 N / m or more. Although the case where a circuit pattern is formed on a semiconductor substrate (wafer) has been described above, the present invention may be applied to a case where a circuit pattern is formed on a wiring substrate.

[Brief description of the drawings]

FIG. 1 is a view showing a process of forming a circuit pattern according to a first embodiment.

FIG. 2 is a view showing a process of forming a circuit pattern according to the first embodiment;

FIG. 3 is a diagram schematically showing a surface modification device.

FIG. 4 is an enlarged view after forming a Ti / Ni / Au film.

FIG. 5 is a diagram schematically illustrating a sputtering apparatus.

FIG. 6 is a perspective view for explaining a peeling step of the pressure-sensitive adhesive sheet.

FIG. 7 is a cross-sectional view for explaining a peeling step of the pressure-sensitive adhesive sheet.

FIG. 8 is a view showing the results of a tape peeling test depending on the presence or absence of surface modification.

FIG. 9 is a view showing a result of XPS analysis before surface modification.

FIG. 10 is a view showing the result of XPS analysis after surface modification.

FIG. 11 shows peeling measurement results in a tape test.

FIG. 12 is a view showing a pattern forming step in the second embodiment.

FIG. 13 is a view showing a pattern forming step in the second embodiment.

FIG. 14 is a diagram showing a measurement result of an adhesive force between a titanium thin film and an insulating film by a scratch test.

FIG. 15 is a view showing a process of forming a circuit pattern according to the third embodiment.

FIG. 16 shows peeling measurement results in a tape test.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Silicon substrate, 2 ... Insulating film, 3 ... Aluminum thin film (base pattern), 4 ... Protective film, 5 ... Titanium thin film, 6 ... Nickel thin film, 7 ... Gold thin film, 8 ... Adhesive sheet, 50 ... P-type silicon Substrate, 51: N-type impurity diffusion region (base pattern), 60: gold thin film, 70: insulating film, 71: silicon nitride film (base pattern), 72: TEOS-S
iO2 membrane.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Takeshi Miyajima 1-1-1, Showa-cho, Kariya-shi, Aichi Prefecture Inside Denso Corporation (72) Inventor Mikimasa 1-1-1, Showa-cho, Kariya-shi, Aichi Co., Ltd. Within DENSO (72) Inventor Chikage Noritake 1-1-1, Showa-cho, Kariya-shi, Aichi F-term within DENSO Corporation (reference) RR15 RR22 SS04 VV07 WW00 WW02 XX34

Claims (14)

[Claims] 1. A method according to claim 1, wherein the base pattern (3, 51, 71) and the insulating film (2, 4, 70) are exposed on the substrate (1, 50). , A metal film (5) is formed, and then, the base pattern (3, 5
1, 71) while leaving the metal film (5) on the insulating film (2, 71).
In the pattern forming method for stripping the metal film (5) on the (4, 70), the base pattern (3, 51, 71) does not cause stripping of the metal film (5) and does not cause stripping on the surface of the insulating film portion. A pattern forming method including a step of facilitating the pattern formation. 2. The pattern forming method according to claim 1, wherein the step of facilitating the separation on the surface of the insulating film portion comprises the step of forming a base pattern (3) and an insulating film (4) on the substrate (1). Is a surface modification step in an exposed state, and after the step,
A desired metal film (5) is formed, and the metal film (5) on the insulating film (4) is peeled off while leaving the metal film (5) on the base pattern (3). Characteristic pattern formation method. 3. The pattern forming method according to claim 2, wherein a plasma treatment is used as the surface modification step. 4. The pattern forming method according to claim 3, wherein CF is used as a plasma processing gas during the plasma processing.
A pattern forming method using a mixed gas of a base gas and oxygen. 5. The pattern forming method according to claim 2, wherein a stress adjusting film (6) for adjusting stress applied to an interface between the metal film (5) and a base is formed on the metal film (5). ) Is formed, and thereafter, the metal film (5) on the insulating film (4) is removed while leaving the metal film (5) on the base pattern (3). Characteristic pattern formation method. 6. The pattern forming method according to claim 5, wherein the laminated film of the metal film (5) and the stress adjusting film (6) has a total stress of 30 N / m or more. Method. 7. The pattern forming method according to claim 1, wherein the metal film is in contact with the base pattern.
Is a highly reducing metal thin film. 8. The pattern forming method according to claim 1, wherein the step of facilitating the separation on the surface of the insulating film portion comprises a step of forming a base pattern (51) and an insulating film (2) on a substrate (50).
Is a step of forming a metal film (60) which is hard to be oxidized in a state where the metal film (5) is exposed.
And a metal film (5) on the base pattern (51)
Wherein the metal film (5) on the insulating film (2) is peeled off while leaving the pattern. 9. The pattern forming method according to claim 8, wherein the metal film that is difficult to oxidize has a thickness of 2 to 50 n.
a gold or platinum film having a thickness of m. 10. The pattern forming method according to claim 8, wherein a stress adjusting film (6) for adjusting a stress applied to an interface between the metal film (5) and a base is formed on the metal film (5). ) Is formed, and thereafter, the metal film (5) on the insulating film (2) is peeled off while leaving the metal film (5) on the base pattern (51). Characteristic pattern formation method. 11. The pattern forming method according to claim 10, wherein the laminated film of the metal film (5) and the stress adjusting film (6) has a total stress of 30 N / m or more. Method. 12. The pattern forming method according to claim 1, wherein the step of facilitating the separation on the surface of the insulating film portion includes the step of forming a base pattern (71) and an insulating film (70) on the substrate (1).
Is a step of forming a silicon oxide film (72) on the insulating film (70) from a state in which is exposed, and after the step,
A desired metal film (5) is formed, and a base pattern (71) is formed.
The silicon oxide film (72) while leaving the metal film (5)
A metal film (5) on the substrate is peeled off. 13. The pattern forming method according to claim 12, wherein a stress adjusting film (6) for adjusting stress applied to an interface between the metal film (5) and a base is formed on the metal film (5). ), And thereafter, the metal film (5) on the silicon oxide film (72) is peeled off while leaving the metal film (5) on the base pattern (71). A pattern forming method characterized by the above-mentioned. 14. The pattern forming method according to claim 13, wherein the laminated film of the metal film (5) and the stress adjusting film (6) has a total stress of 60 N / m or more. Method.