JP2001307948A - Thin-film electronic components - Google Patents

Abstract

(57) [Summary] [Problem] The thickness of a support member can be made extremely low as 50 μm or less,
A thin-film electronic component capable of observing a terminal connection state from a back surface is provided. A thin-film electronic component having a thin-film element having an insulator layer and electrode layers formed on support members, wherein the support members transmit visible light. Or a silicon nitride film 25 that transmits visible light on a visible light transmitting substrate 23.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin-film electronic component, and more particularly to a low-inductance thin-film capacitor provided in an electric circuit which operates at a high speed and used for preventing a fluctuation of a power supply voltage.

[0002]

2. Description of the Related Art In recent years, a high-speed digital circuit of a computer which needs to process a large amount of information at a high speed has been used.
The operating speed is remarkably increased from 100 MHz to 1 GHz or more. Also, as the degree of integration of LSIs increases and the number of transistor elements in a chip increases, the power consumption per chip increases. The power supply voltage tends to decrease in order to suppress power consumption.

[0003] High speed, high integration of these LSI chips,
Due to the lowering of the power supply impedance due to the lower power supply voltage,
A large current must be supplied from the power supply.

In particular, when the switching of the transistor circuits in the LSI chip occurs simultaneously, if a large current cannot be supplied within a time sufficiently short as compared with the time corresponding to the operating frequency, the power supply voltage drops instantaneously, and It will cause malfunction. Power supply noise called so-called simultaneous switching noise occurs.

In order to suppress the simultaneous switching noise, conventionally, a means has been adopted in which a chip-type ceramic capacitor or the like is arranged around the LSI chip and the energy stored in the capacitor is instantaneously supplied. A capacitor having a function for such a purpose is a so-called decoupling capacitor.

[0006] The performance required of the decoupling capacitor lies in how quickly the current can be supplied according to the voltage fluctuation of the load section faster than the clock frequency. Therefore, it must function reliably as a capacitor in the frequency range from 100 MHz to 1 GHz.

However, an actual capacitor element has a resistance component and an inductance component in addition to the capacitance component. While the impedance of the capacitance component decreases with increasing frequency, the impedance of the inductance component increases with increasing frequency.

Accordingly, as the operating frequency increases, the inductance of the element limits the transient current to be supplied, so that the original decoupling energy stored in the capacitor is sufficient for recovering the power supply voltage. Will not be alive.

To this end, it is important to reduce the inductance of the decoupling capacitor element itself. As means for reducing the inductance of the capacitor element, US Pat.
No. 2-24449, U.S. Pat. No. 5,880,925 and the like are known. Further, as in JP-A-60-94716, means for reducing inductance in a thin film capacitor is also employed.

[0010]

By the way, a power supply wiring is required between the decoupling capacitor and the LSI chip. Therefore, no matter how much the inductance component of the decoupling capacitor itself is reduced, if the inductance of the power supply wiring is large, the LSI
Instantaneous high current supply to the chip is also not possible. As a method of reducing the inductance of the power supply wiring, a method of minimizing the wiring distance between the decoupling capacitor and the LSI chip or a method of folding the current path by bringing the power wiring and the ground wiring pattern close to each other in a multilayer structure is considered. .

In the latter method, a dedicated package is required, so that an increase in cost cannot be avoided. If the former method is adopted, the best method is to dispose and connect a decoupling capacitor directly under the LSI chip. But,
The gap between the LSI chip and the package in the fine pitch BGA connection directly under the LSI in recent years is at most 100μ.
m, it is necessary to form a cavity on the upper surface of the package when mounting a chip-type ceramic capacitor directly under an LSI chip, and the cost of the package is unavoidable.

Further, in the case of a thin film capacitor, the overall thickness can be reduced as compared with a chip type ceramic capacitor. However, since the thin film capacitor is formed by forming a capacitance element on a supporting member, Fine pitch BGA
In order to secure the height margin of the terminal, the thickness of the support member must be 50 μm or less. Thickness 50μm
Even if an attempt is made to fabricate a thin film capacitor using the following support members, conventionally, the stress during the fabrication process is not constant, and the thin film capacitor is deformed or broken, and the support member becomes 50 μm.
m or less could not be obtained.

Furthermore, in the case of a thin-film capacitor having a fine pitch BGA terminal on one side, the terminal connection state after mounting cannot be confirmed, so that a connection failure cannot be found immediately after mounting, and the terminal is almost completely completed after the product is almost completed. Trouble due to poor connection has occurred. This is because if a terminal connection failure occurs, the inductance value becomes larger than the design value, and the decoupling performance cannot be sufficiently exhibited.

[0014]

The inventors of the present invention have made repeated studies in view of such a situation, and as a result, have found that the support member is made of a silicon nitride film that transmits visible light or a visible light transmitting substrate. The present invention has been found to be able to obtain a thin-film electronic component having a support member having an extremely low thickness of 50 μm or less and capable of observing a terminal connection state from the rear surface by forming a transparent silicon nitride film. Reached.

That is, the thin film electronic component of the present invention is a thin film electronic component in which a thin film element having an insulator layer and an electrode layer is formed on a support member, wherein the support member transmits visible light. It is formed by forming a silicon nitride film or a silicon nitride film that transmits visible light on a visible light transmitting substrate.

As described above, by forming the support member from a silicon nitride film that transmits visible light or a silicon nitride film that transmits visible light to a visible light transmitting substrate, the strength of the support member can be increased. The thickness of the support member can be reduced to 50 μm or less without being destroyed by stress or the like in the manufacturing process of the thin film capacitor, and a thinner capacitor with a lower profile can be manufactured.

Further, since the silicon nitride thin film has a small coefficient of thermal expansion, even if a thermal history occurs in the thin film electronic component, the warpage of the support member can be suppressed, and the deformation of the thin film element formed on the support member can be prevented. it can.

Further, in order to transmit visible light, the mother substrate and the L
The connection state between the surface electrode provided on the SI and the external electrode of the thin-film electronic component can be checked from the surface opposite to the external electrode, and the inductance value can be reliably set to the design value. . That is, in a semiconductor device in which an LSI chip is connected to a package substrate by BGA terminals, it is desirable that the thin-film electronic component of the present invention be disposed between the LSI chip and the package substrate.

In the present invention, the thickness of the supporting member is set to 50
Since the thickness can be set to μm or less, for example, the thin-film electronic component of the present invention can be mounted in the gap between the LSI chip and the package.

As described above, the thin-film electronic component of the present invention uses a support member consisting of a silicon nitride film alone or a transparent support member in which a silicon nitride film is formed on a visible light transmitting base and the strength is reinforced. It is possible to mount a thin-film electronic component such as a thin-film capacitor as designed in a gap of 100 μm or less between the LSI chip and the package without expensive processing. This allows, for example,
The power supply wiring length between the decoupling capacitor and the LSI chip can be minimized, and the inductance of the power supply wiring can be minimized.

Further, in the thin-film electronic component of the present invention, the supporting member is formed by forming a silicon nitride film that transmits visible light on the visible light transmitting base, and the silicon nitride film has a thickness of 5 to 1 mm.
Desirably, it is 0 μm.

Further, in the spectrum of the silicon nitride film by infrared absorption analysis, the S
When the intensity ratio of the peak of the iH bond (I _Si-H / I _Si-N ) is 0.
It is desirable that it is 02 or less. By using such a silicon nitride film, a silicon nitride film that transmits visible light can be obtained, and a high-strength film can be obtained.
This makes it possible to make the supporting member capable of supporting the thin film element thinner, and it becomes easier to transmit visible light by making the supporting member thinner.

Preferably, the Young's modulus of the silicon nitride film is 300 GPa or more.

[0024]

(Embodiment 1) As a thin film electronic component of the present invention, a thin film capacitor will be described as an example. As shown in FIG. 1, this thin film capacitor is formed by forming a thin film element 3 on the surface of a support member 1, and the thin film element 3 is formed of an insulating layer (a concept including a dielectric layer) 5. It is configured by forming electrode layers 6 and 7 on the upper and lower surfaces.

The thin film element 3 is covered with a protective film 9 made of, for example, benzocyclobutene (BCB), and the protective film 9 is exposed so that a part of the electrode layers 6 and 7 is exposed.
Has a through hole 11 formed therein. These through holes 11
Is formed by exposing the protective film 9, and a solder barrier layer 13 made of, for example, Ni is formed on the electrode layers 6 and 7 exposed in the through holes 11. External terminals made of, for example, solder bumps are formed on the solder barrier layer 13.

The support member 1 is made of a high-strength silicon nitride film that transmits visible light. The silicon nitride film has a Young's modulus of 300 GPa or more, and as a result of analysis by infrared absorption analysis (FT-IR), almost no Si—H bond vibration peak (2300 cm ⁻¹ ) is observed. Is required as a feature of the silicon nitride film for realizing the above. Such a silicon nitride film has a small amount of impurities such as hydrogen and bonding defects, and has a small absorption of visible light due to impurity levels and defect levels, so that it transmits visible light.

The silicon nitride film constituting the support member 1 has a peak intensity ratio I _Si-H / I in an infrared absorption analysis spectrum.
_Si-N (I _Si-H : _Si-H over 600 to 1200 cm ^-1
Large peak due to N bonding, I _Si-N : 2300 cm
^-1 around 0.02).
It is desirable that: In particular, it is preferably 0.015 or less, more preferably 0.01 or less. In such a silicon nitride film, hardness and strength are increased because there are few impurity defects which deteriorate mechanical properties. When performing the infrared absorption analysis, it is preferable to perform the measurement in a low-humidity environment such as a humidity of 30%.

FIG. 4 is an example of an infrared absorption analysis spectrum of the silicon nitride film used as the support member 1 of the present invention. Large peak was observed due to the Si-N bonds over the 600~1200cm ^-1, S in the vicinity of 2300 cm ^-1
A small peak due to the iH bond is seen. As shown in FIG. 5, the intensity of these peaks is obtained by drawing a straight line connecting the backgrounds, drawing a line perpendicular to the horizontal axis from the straight line, passing a straight line passing through the maximum point H, and setting the intersection point as the origin O And The peak intensity P is a height from the origin O to the maximum point H. FIG. 5 is an infrared absorption analysis spectrum of a silicon nitride film formed by a low-pressure CVD method (hereinafter, referred to as LPCVD). The temperature of a substrate placed in a vacuum vessel is raised to 900 ° C., and silane gas ( C
H ₄ ) and ammonia gas (NH ₃ ) were introduced.

The intensity ratio of such a peak (I _Si-H / I
_(Si-N ) is 0.02 or less, Young's modulus is 300 GPa
In order to obtain a silicon nitride thin film having the above, it is important to use an ECR sputtering method without using hydrogen gas, and particularly to form a film while heating the silicon substrate to a temperature of 400 ° C. or higher. The silicon nitride film formed by such an ECR sputtering method has a low internal stress and is unlikely to cause breakage, distortion, or bending. Further, since the surface is formed in a mirror-finished state with few impurities, there is no light scattering and good transparency. Incidentally, as long as the silicon nitride thin film has such features, it may be formed by another method such as a sputtering method or a CVD method.

In the film formation method by the ECR sputtering method, N ₂ gas is introduced into a vacuum vessel, N ₂ gas is activated by microwaves, and the reaction with silicon on the substrate is promoted, so that unreacted silicon is promoted. And the composition ratio of the generated silicon nitride film can be made closer to the stoichiometric composition. In addition, by reducing the number of dangling bonds contained in the silicon nitride film, a reduction in residual stress can be realized.
Further, the annealing effect by the nitrogen plasma reduces stress and promotes crystallization, thereby increasing hardness.

The thickness of the support member 1 made of a silicon nitride film is
The thickness is preferably 50 μm or less, and particularly preferably 10 to 30 μm. However, the thickness is particularly preferably in the range of 10 to 15 μm from the viewpoint of securing the yield during the production of the thin film capacitor and reducing the production cost of the silicon nitride film.

The thickness of the insulator layer 5 and the electrode layers 6 and 7 is 0.1 to 1 μm, and the thickness of the protective film 9 is 2 to 5 μm. The thickness of each layer can be appropriately changed depending on the material and use.

The electrode layers 6 and 7 and the solder barrier layer 13 of the present invention include gold (Au), platinum (Pt), palladium (Pd), copper (Cu), silver (Ag), and titanium (T
i), chromium (Cr), nickel (Ni) thin films and the like. Among them, gold (Au) and platinum (Pt), which have low reactivity with the dielectric material and are hardly oxidized, and copper (Cu) having low resistance. Thin films are best. These may be used alone or in combination of two or more.

Further, the insulator layer 5 may have a high dielectric constant in a high frequency region, and its thickness is 1 μm.
m or less is desirable. For example, as a metal element, Pb, M
It is preferable to use a dielectric thin film made of a perovskite-type composite oxide crystal containing g and Nb and having a relative dielectric constant of 1000 or more at a measurement frequency of 300 MHz (room temperature). Further, for example, a perovskite-type composite oxide crystal containing Ba and Ti, PZT, PLZT, SrTiO ₃ , T
It may be a ₂ O ₅ or the like, and is not particularly limited. Such an insulator layer 5 is manufactured by a known method such as a PVD method, a CVD method, and a sol-gel method.

In the thin film capacitor configured as described above, the support member 1 is formed of a silicon nitride film that transmits visible light, so that the support member 1 can be strengthened, and the stress and the like in the manufacturing process of the thin film capacitor can be improved. Thus, the thickness of the supporting member 1 can be reduced to 50 μm or less, and a very low-profile thin film capacitor can be obtained.

Since the silicon nitride film of the present invention transmits visible light, an external terminal made of a solder bump is formed in the through hole 11, and when this external terminal is connected to the surface electrode of the mother board, Terminal connection state can be confirmed. (Embodiment 2) FIG. 2 shows another embodiment of the thin film electronic component of the present invention. In this embodiment, a support member 21 is formed by forming a high-strength silicon nitride film 25 on one surface of a visible light transmitting base 23. The thin film element 27 is formed on the surface of the silicon nitride film 25.

As the visible light transmitting substrate 23, for example, a quartz glass or zinc borosilicate glass substrate is preferable, but any substrate may be used as long as it has a silicon nitride film 25 formed thereon and transmits visible light.

The silicon nitride film 25 has a Young's modulus of 300 GPa or more from the viewpoint of securing strength. As a result of analysis by FT-IR,
It is characterized in that almost no vibration peak of -H bond (2300 cm ^-1 ) is observed.

In the above example, the example in which the thin film element 27 is formed on the surface of the silicon nitride film 25 has been described. However, it is not necessary to form the thin film element on the surface of the silicon nitride film that transmits visible light. For example, referring to FIG. 2, a silicon nitride film that transmits visible light may be formed on the lower surface of the visible light transmitting base, and a thin film element may be formed on the upper surface. Further, a silicon nitride film that transmits visible light may be formed on both surfaces of the visible light transmitting substrate.

The thin film capacitor 30 according to the first and second embodiments of the present invention is, for example, as shown in FIG.
The thin film capacitor 3 is disposed between the LSI chip 31 and the package substrate 33 of the semiconductor device in which the I chip 31 is connected to the package substrate 33 by the BGA terminal 35.
The external terminal 37 formed at 0 is joined to the bottom surface of the LSI chip 31. It is needless to say that the external terminals formed on the thin film capacitor may be joined to the upper surface of the package substrate 33.

Further, it goes without saying that the thin film capacitor 30 may be mounted on the mother substrate by bonding the external terminal 37 formed on the thin film capacitor 30 to the surface electrode formed on the surface of the mother substrate.

In such a semiconductor device, the support member 1,
21 has a high strength and a high hardness, and can be thinned to 50 μm or less. Thus, without performing expensive processing on the package substrate 33, for example, a thin film can be formed in a gap of 100 μm or less between the LSI chip 31 and the package substrate 33. The capacitor 30 can be mounted, the length of the power wiring between the thin film capacitor 30 and the LSI chip 31 can be minimized, and the inductance of the power wiring can be minimized.

Further, first, the external terminals 37 of the thin film capacitor 30 are bonded to the surface electrodes of the LSI chip 31, and then the LSI chip 31 is bonded to the package substrate 33, thereby manufacturing the above-described semiconductor device. In the thin film capacitor 30, since the support members 1 and 21 transmit visible light, the terminal connection state after mounting can be confirmed.

In the above example, a thin film capacitor is described as an example of a thin film electronic component. However, the thin film electronic component of the present invention is not limited to the above example. For example, a thin film inductor, a thin film LC filter, or a thin film capacitor may be used. It goes without saying that the present invention may be applied to a thin film composite part obtained by combining the above.

In the above example, a single-plate type thin film capacitor in which one insulating layer is sandwiched between electrode layers has been described. However, a laminated thin film capacitor in which a plurality of insulating layers and electrode layers are alternately stacked is described. There may be.

In the above example, an example in which one thin-film element is formed on the support member has been described. However, a plurality of thin-film elements may be formed on the support member.

[0047]

EXAMPLE 1 An ECR was used to form a silicon nitride film on a single crystal silicon substrate.
Sputtering method, strong alkali etching method for removing silicon substrate, high-frequency magnetron sputtering method for forming electrode layer, terminal electrode layer and dielectric layer, spin coating for protection film formation and processing, photolithography method after baking Were used.

The production of the silicon nitride film by the ECR sputtering method was as follows. Using nitrogen and Ar as process gases, nitrogen is supplied onto the substrate by a nitrogen gas flow, and nitrogen gas is excited in ECR plasma.
It is ionized and supplied to the substrate surface. Further, Ar ions ionized in the ECR plasma are accelerated and collide with the silicon target to which the RF bias is applied by the applied RF voltage to sputter silicon. The sputtered silicon reaches the substrate. The Ar ions in the ECR plasma also serve as assist ions for accelerating the reaction on the substrate. By the simultaneous progress of these plasma processes, the reaction between nitrogen and silicon is promoted on the silicon substrate, and a silicon nitride film having excellent crystallinity is formed.

Then, a plurality of silicon nitride films were formed by changing the nitrogen gas flow rate (N ₂ flow rate), microwave output, silicon substrate temperature, and formed thickness. Table 1 shows these conditions.

The obtained sample was subjected to infrared absorption analysis and Young's modulus measurement. Infrared absorption analysis is performed by FT-IR
To obtain a spectrum of 400 to 4000 cm ⁻¹ ,
A peak around 0 cm ^-1 due to a Si-N bond, and 23
The size of the peak at around 00 cm ⁻¹ due to the Si—H bond was measured. Then, a background treatment was performed, and a peak intensity ratio I _Si-H / I _Si-N in the infrared absorption spectrum was calculated from each peak intensity. FIG. 5 shows the infrared absorption spectrum of Sample No. 3, and FIG. 8 are shown.

The Young's modulus of the produced silicon nitride film is
Micro surface material property evaluation system (Akasi Corporation MZT-
(Type 3), in the measurement mode of load increase + load decrease, and using a triangular pyramid indenter (62 °), the hardness at the center of the sample was measured by microindentation hardness with a maximum load of 0.5 gf and obtained. The Young's modulus was calculated from the hardness. Table 1 shows the results.

Further, when the presence or absence of visible light transmission was measured by an ultraviolet-visible absorption spectrum, the sample of the present invention transmitted visible light.

[0053]

[Table 1]

As is clear from Table 1, the sample No.
In Nos. 1 to 7, visible light is transmitted and the peak intensity I _Si-H / I
_Si-N is 0.02 or less, Young's modulus is 300 GPa or more, and 8, the sample transmits visible light, has a peak intensity I _Si-H / I _Si-N of 0.101, and has a Young's modulus of 1
It was 90 GPa.

After the formation of the silicon nitride film, the single crystal silicon substrate was completely removed by etching with a KOH solution to obtain a support member composed of a single silicon nitride film.

Both the electrode layer and the insulator layer were patterned by RF magnetron sputtering by a masking method. Ar in the process chamber as a sputtering gas
Gas was introduced and the pressure was maintained at 6.7 Pa by evacuation. A substrate holder and three target holders are installed in the process chamber, and sputtering from three types of target materials is possible.

At the time of sputtering, the substrate holder on which the produced supporting member was set was moved to the target position of the kind of material to be formed, and the distance between the substrate and the target was fixed at 60 mm. 13.56 MHz high frequency voltage is applied between the substrate holder and the target by an external high frequency power supply,
The target surface was sputtered by generating a high-density plasma near the target by a magnetron magnetic field formed by a permanent magnet installed on the back of the target.

The application of the high-frequency voltage can be applied to three targets independently. The substrate holder had a heating mechanism using a heater, and was controlled so that the substrate temperature during sputter deposition was constant. Further, three types of metal masks having a thickness of 0.10 mm can be installed on the target side of the support member installed on the substrate holder, and a required mask can be set on the film formation surface of the support member according to a film formation pattern. did.

First, a mask pattern for the lower electrode layer is set on the supporting member, an electrode layer is formed by sputtering an Au target, and then Pb (Mg _1/3
Using Nb _2/3) O ₃ sintered body, sets the mask pattern of the dielectric layer, the substrate holder temperature 500 ° C., under the conditions of RF power 200 W, thereby forming a dielectric layer. Next, a mask pattern for the upper electrode layer was set, and an electrode layer was formed by sputtering an Au target. The total area of the effective electrodes as a capacitor was 1.0 mm ² .

Next, after applying benzocyclobutene (BCB) by spin coating, baking treatment is performed in a drying furnace, and etching is removed by a photolithography process to form a protective film having through holes for connecting external terminals. Formed. A solder barrier layer made of Ni was formed on the bottom surface of the through hole by a mask sputtering method, and a thin film capacitor having a total of eight solder barrier layers each for the upper and lower electrode layers was manufactured. The total thickness of the thin film element and the protective film on the support member was 5 μm.

After forming external terminals made of solder bumps on the solder barrier layer of the manufactured thin film capacitor, the external terminals were cut out by laser processing and mounted on an evaluation board.
The used solder bumps had a diameter of 0.1 mm, and the height of the bumps after mounting was 50 μm. Therefore, the height of the thin film capacitor including the external terminals was 65 to 105 μm because the supporting member had a thickness of 10 to 50 μm.

In the sample of the present invention, the mounting state on the evaluation board could be observed with an optical microscope through the silicon nitride film supporting member of the thin film capacitor. All the external terminals were connected, and it was confirmed that there was no displacement of the mounting.

The impedance characteristics from 1 MHz to 1.8 GHz were measured using an impedance analyzer (HP4291A, manufactured by Hewlett-Packard Company). As a result, values of a capacitance component of 15 nF and an inductance component of 25 pH were obtained.

Further, a supporting member having a thickness of 10 to 50 μm
Even when the electrode layer, the dielectric layer, and the protective film were formed, the thin film capacitor could be manufactured without being damaged. However, the sample No.
As for No. 8, since the Young's modulus was small, some deformation occurred.

On the other hand, the present inventors, as a comparative example, formed an electrode layer, a dielectric layer and a protective film in the same manner as in Example 1 except that Al ₂ O ₃ having a thickness of 45 μm was used for the support member. However, the support member made of Al ₂ O ₃ was broken due to the stress during the manufacturing process. Al _{2 with a} thickness of 45 μm or less
All the O ₃ substrates were destroyed during the processing of the substrates themselves. Example 2
A silicon nitride film having a thickness of 5 μm was formed on a quartz glass substrate having a thickness of 45 μm and transmitting visible light by the above-mentioned ECR sputtering method and supported in exactly the same manner as in Example 1 except that the film formation time was shortened. A member was obtained. FT-IR of silicon nitride film
From the measurement result, a vibration peak of Si—N is observed, and a peak intensity I _Si—H /
I _Si-N was 0.011.

Hereinafter, the thickness 105
When a μm thin film capacitor was produced, there was no deformation or damage during the production process, and the state of being mounted on the evaluation board could be confirmed via the support member. In addition, evaluation was made in the same manner as in Example 1. As a result, a value of 17 nF for the capacitance component and a value of 20 pH for the inductance component were obtained.

Even when an electrode layer, a dielectric layer, and a protective film were formed on a 50 μm-thick support member having a 10 μm-thick silicon nitride film, a thin-film capacitor could be manufactured without being deformed or damaged. .

[0068]

As described above in detail, in the thin-film electronic component of the present invention, the supporting member is made of a silicon nitride film that transmits visible light,
Alternatively, by forming a visible light transmitting substrate with a silicon nitride film that transmits visible light, the supporting member can have high strength and high hardness, and even if the thickness of the supporting member is 50 μm or less,
For example, it is possible to obtain a thin film capacitor that is extremely low in height and can be checked for a mounted state by passing through a support member without being broken by stress or the like in a manufacturing process of the thin film capacitor.

Thus, for example, a thin film capacitor can be mounted as designed in a gap between an LSI chip and a package without performing expensive processing on the package substrate. Therefore, the length of the power supply wiring between the thin film capacitor and the LSI chip can be minimized, and the inductance can be minimized.
This is a very effective means for reducing power supply noise at high speed.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a thin-film electronic component of the present invention.

FIG. 2 is a sectional view showing another thin-film electronic component of the present invention.

FIG. 3 is an explanatory diagram showing an example in which the thin-film electronic component of the present invention is mounted in a gap between an LSI chip and a package.

FIG. 3 is a diagram showing an infrared absorption analysis spectrum of No. 3. FIG.

FIG. 8 is a diagram showing an infrared absorption analysis spectrum of Sample No. 8. FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1, 21 ... Support member 3 ... Thin film element 5 ... Insulator layer 6, 7 ... Electrode layer 23 ... Visible light transmission base 25 ... Silicon nitride film

Claims (5)

[Claims] 1. A thin-film electronic component in which a thin-film element having an insulator layer and an electrode layer is formed on a support member, wherein the support member is made of a silicon nitride film that transmits visible light, A thin-film electronic component comprising a substrate and a silicon nitride film that transmits visible light formed thereon. 2. The thin-film electronic component according to claim 1, wherein the thickness of the support member is 50 μm or less. 3. The method according to claim 1, wherein the supporting member is formed by forming a silicon nitride film transmitting visible light on a visible light transmitting base, and the thickness of the silicon nitride film is 5 to 10 μm. 2. The thin-film electronic component according to 2. 4. In a spectrum obtained by infrared absorption analysis of a silicon nitride film, an intensity ratio (I _Si-H / I _Si-N ) of a peak of a Si—H bond to a peak of a Si—N bond is 0.02 or less. The thin-film electronic component according to claim 1, wherein: 5. The thin-film electronic component according to claim 1, wherein the Young's modulus of the silicon nitride film is 300 GPa or more.