JP2001305072A - Substrate defect detection method and apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method and an apparatus for detecting a defect of a substrate capable of detecting a defect of an optically transparent substrate such as a semiconductor substrate or a glass substrate in a wide inspection target area at a high speed. . SOLUTION: Light is incident on the substrate to be measured 10 so as to be reflected multiple times inside the substrate to be measured 10, and the light propagating inside the substrate to be measured 10 has a defect 1 on the surface or inside the substrate to be measured.
6 to detect the scattered light caused by the reflection,
Based on the detected scattered light, the defect 16 of the substrate to be measured 10 is detected.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for detecting a defect of an optically transparent substrate such as a semiconductor substrate or a glass substrate.

[0002]

2. Description of the Related Art Scratches and minute defects on the surface of a semiconductor substrate or a glass substrate used for a liquid crystal display device have an important influence on the quality thereof. For example, in a semiconductor wafer,
Defects may be introduced during the growth of the single crystal, or defects may be generated by heat treatment required for device fabrication. In the step of chemical mechanical polishing of those surfaces, a defect called a scratch sometimes occurred. Therefore, in order to sufficiently guarantee the yield of the semiconductor device, the distribution and size of scratches and minute defects, the transition of the generation with the progress of the semiconductor device manufacturing process, and the like are inspected, and the semiconductor device manufacturing process is managed. Needed.

Heretofore, the following techniques have been used as a technique for detecting the above-mentioned scratches and minute defects on the substrate surface.

First, a laser scanning type defect inspection apparatus, a photoacoustic imaging method, and the like are known as those using a laser beam as a probe.

In a laser scanning type defect inspection apparatus, a laser beam having a diameter of several microns is irradiated on the surface of a substrate to be measured while scanning with a rotating polyhedron, and reflected or scattered light at this time is detected, whereby the surface of the substrate to be measured is detected. Detects scratches and minute defects. This device can also be used for optically opaque materials.

In the photoacoustic imaging method, a laser beam is converged and irradiated on the surface of a substrate to be measured, and heat generated by absorbing light from the substrate to be measured is detected as a pressure change (acoustic wave). Since the laser light is usually modulated at a frequency of 10 Hz to several MHz, the pressure change is also modulated at this frequency to become a sound wave. The intensity of the sound wave depends on the light absorption coefficient, specific heat, and thermal conductivity of the substrate to be measured. These light absorption coefficients, specific heats, and thermal conductivities show different values between the normal part of the substrate to be measured and the scratches and minute defects. Therefore, irradiate the laser beam,
By detecting a sound wave from the substrate to be measured by a microphone, a piezo element, or the like, it is possible to detect a scratch or a minute defect on the surface of the substrate to be measured.

[0007] Various microscopes are also used for detecting scratches and minute defects on the substrate surface. Representative examples include a Nomarski differential interference microscope, an interference microscope, and a scanning probe microscope.

[0008]

However, the conventional techniques used for detecting defects as described above require an enormous amount of time when inspecting a wide range of substrate surfaces.

For example, in an inspection apparatus using a laser beam, a narrowed laser beam diameter becomes a detection area, and a large amount of time is required for inspection over a wide range. On the other hand, in various microscopes, the field of view of each microscope is the detection area, but it takes a great deal of time to process the acquired image data, and is not suitable for wide-area inspection of the substrate.

An object of the present invention is to provide a method and an apparatus for detecting a defect of a substrate capable of detecting a defect of an optically transparent substrate such as a semiconductor substrate or a glass substrate in a wide inspection target area at a high speed. It is in.

[0011]

SUMMARY OF THE INVENTION The object of the present invention is to provide a multi-reflecting device for measuring light emitted from a light source inside a substrate to be measured.
A light incident unit that enters the inside of the measured substrate, and a light detection unit that detects scattered light generated by light propagating inside the measured substrate being scattered by a defect on the surface or the inside of the measured substrate, A substrate defect detecting device, comprising: a position specifying unit that specifies a position of the defect in the surface of the substrate to be measured, based on a relative positional relationship between the light detection unit and the substrate to be measured. Achieved.

Further, in the above-described apparatus for detecting a defect of a substrate, the light incident means sweeps an incident angle of the light incident on the inside of the measured substrate within a range where the light is reflected multiple times within the measured substrate. You may make it.

In the above-described apparatus for detecting a defect of a substrate, the apparatus may further include position control means for moving a relative position between the substrate to be measured and the light detection means.

In the above-described apparatus for detecting a defect of a substrate, the light detecting means may further include a depth detecting means for detecting a depth of the defect in the substrate to be measured.

In the above-described apparatus for detecting a defect of a substrate, the apparatus may further include a spectroscopic analyzer that performs spectroscopic analysis of light emitted after multiple reflection inside the substrate to be measured. The contaminant adhering to the substrate to be measured may be measured.

[0016] In the above-described apparatus for detecting a defect of a substrate, the apparatus may further include a defect analysis means for analyzing the defect whose position has been specified by the position specification means.

It is another object of the present invention to provide a light-emitting device in which light is incident on a substrate to be measured so that the light is reflected multiple times within the substrate to be measured, and light propagating inside the substrate to be measured is subjected to a defect on the surface or inside the substrate to be measured. This is achieved by a method for detecting a defect of a substrate, comprising detecting scattered light caused by reflection by the substrate and detecting the defect of the substrate to be measured based on the detected scattered light.

In the above-described method for detecting a defect of a substrate, the incident angle of light incident on the inside of the substrate to be measured may be swept within a range where the light is reflected multiple times inside the substrate to be measured.

In the above-described method for detecting a defect of a substrate, the measurement is performed while changing the relative position between the photodetector for detecting the scattered light and the substrate to be measured, so as to cover substantially the entire surface of the substrate to be measured. Defect detection may be performed.

In the above-described method for detecting a defect of a substrate, it is preferable that the substrate to be measured has a substantially rectangular shape, and light is simultaneously incident on one end surface of the substrate to be measured.

In the above-described method for detecting a defect of a substrate, the substrate to be measured may have a substantially donut shape, and light may be introduced from an inner peripheral end surface or an outer peripheral end surface of the substrate to be measured.

In the above-described method for detecting a defect of a substrate, light emitted after multiple reflection inside the substrate to be measured is spectrally analyzed to measure contaminants adhering to the substrate to be measured. You may.

Further, the substrate to be measured is inspected over a wide range by the above-described substrate defect detection method, and based on the defect position information specified by the defect detection method,
The analysis may be performed in a narrow range including the defect.

[0024]

[First Embodiment] FIG. 1 shows a method and an apparatus for detecting a defect of a substrate according to a first embodiment of the present invention.
This will be described with reference to FIG. FIG. 1 is a perspective view showing the configuration of the substrate defect detection apparatus according to the present embodiment, and FIG. 2 is a sectional view thereof.

First, the configuration of the substrate defect detecting apparatus according to the present embodiment will be explained with reference to FIGS.

A substrate 10 to be inspected for defects is mounted on the substrate mounting table 12. A photodetector 18 that detects light scattered by the defect 16 of the measured substrate 10 is disposed above the measured substrate 10.
In addition, near the end of the substrate 10 to be measured,
An incident optical system 14 for entering light inside is disposed.

The incident optical system 14 is composed of a light source 20 for emitting light from ultraviolet rays to infrared rays and a reflecting mirror 22, and furthermore, an incident light angle adjusting mechanism for controlling the incident angle of the light entering the substrate 10 to be measured. (Not shown).

The light detector 18 has an XY direction moving mechanism 24 for changing the position of the light detector 18 with respect to the substrate 10 to be measured.

The arithmetic unit 26 includes a photodetector 18, an XY direction moving mechanism 24, and a display unit 28 for displaying the arithmetic result.
Is connected.

Next, the operation of the substrate defect detecting apparatus according to the present embodiment will be described.

The light emitted from the light source 20 is reflected by a reflecting mirror 22.
And is introduced simultaneously over one end face of the substrate 10 to be measured. At this time, the angle of the light incident on the end face of the substrate 10 to be measured can be controlled by an incident light angle adjusting mechanism, and the light emitted from the light source 20 is incident at a predetermined angle or the incident angle is swept. be able to.

The light detector 18 can detect light emitted above the substrate 10 to be measured, that is, scattered light generated when light propagating inside the substrate 10 is scattered by the defect 16. The detection signal at this time is input to the arithmetic unit 26. Further, the photodetector 18 can be moved over the substrate 10 to be measured over a wide range by the XY direction moving mechanism 24. Position information of the XY direction moving mechanism 24 is input to the arithmetic unit 26 as a position signal.

The arithmetic unit 26 is capable of analyzing the position of the defect 16 on the substrate 10 to be measured, together with the detection signal from the photodetector 18 and the position signal from the XY direction moving mechanism 24. The analysis result of the arithmetic unit 26 is
It can be drawn on the display device 28 as a two-dimensional or three-dimensional distribution image of the zero defect 16.

Next, the method for detecting a defect of the substrate according to the present embodiment will be explained with reference to FIG.

First, the substrate to be measured 10 is placed on the substrate mounting table 12. In this specification, an optically transparent substrate such as a semiconductor substrate or a plate-like glass substrate for a liquid crystal display device is referred to as a substrate. Further, optically transparent means having a wave number range through which light is transmitted, and includes a case where the film has a light transmittance not only in a visible light region but also in an ultraviolet region and an infrared region.

Next, the light emitted from the light source 20 of the incident optical system 14 is incident on the end face of the substrate 10 to be measured. Here, the wavelength of the light emitted from the light source 20 is selected according to the material of the substrate 10 to be measured. That is, light having a wavelength capable of transmitting through the material of the substrate to be measured 10 is selected as light emitted from the light source 20. This is because light that has entered the inside of the measured substrate 10 needs to be multiple-reflected inside the measured substrate 10. For example, in the case of a silicon substrate having a transmission band in the infrared region, light in the infrared region is used as light emitted from the light source 20, and in the case of a glass substrate having a transmission band in the visible light region, light in the visible region is used as the light source 20. Out of the light.

When light emitted from the light source 20 is introduced from the end face of the substrate 10 into the substrate 10, the incident light angle is adjusted so that the light enters the substrate 10 at a predetermined angle. The incident angle of light is controlled by a mechanism. That is, in the substrate defect detection device according to the present embodiment, the light is reflected multiple times inside the measured substrate 10 and the scattered light generated at the position of the defect 16 on the surface of the measured substrate 10 is detected. Is detected. Therefore, it is necessary to set the incident angle so that the light incident on the substrate to be measured 10 is multiple-reflected inside the substrate.

The conditions under which light is completely reflected inside the substrate can be determined from Snell's law and the calculation of energy reflectance. For example, when an infrared ray is incident on the end face of the silicon substrate, it is completely reflected when the angle between the silicon substrate and the infrared ray is 0 to 72 degrees. The miracle of the infrared ray having an angle in this range is traced in reverse, and the point of intersection with the end face of the silicon substrate is the point of incidence of the infrared ray on the silicon substrate.

The method of using the incident light angle adjusting mechanism of the incident optical system 14 can be roughly classified into two methods.

The first method is a method in which the angle of incidence of the light incident on the inside of the substrate 10 to be measured is fixed to a predetermined value satisfying the above-mentioned conditions.

In this method, the incident angle of light incident on the measured substrate 10 is fixed so that the total reflection angle of light inside the measured substrate 10 becomes a predetermined value. Substrate under test 1
When the reflection angle of the light inside 0 changes, the substrate 1 to be measured
Since the number of reflections inside 0 also changes, there is a possibility that the measurement sensitivity varies. Therefore, fixing the incident angle of light from the light source to a predetermined value has advantages such as suppressing variation in measurement sensitivity between substrates.

However, when the incident angle of the light from the light source 20 is fixed, a region where the light enters and is internally reflected is:
There is a region where light is not incident and internal reflection does not occur. For this reason, even at a position where the defect 16 exists on the substrate to be measured 10, some light scattering does not occur and is not detected.

In the second method, the light emitted from the light source 20 is swept by the incident light angle adjusting mechanism to sweep the incident angle within the range where multiple reflection occurs inside the substrate 10. To improve the detection sensitivity. By continuously changing the angle of incidence,
The total reflection area on the optical path is continuous. This makes it possible to detect the defect 16 on the surface of the substrate to be measured 10 with high sensitivity.

The light incident on the inside of the substrate under measurement 10 under the above-described conditions and methods propagates through the inside of the substrate under measurement 10 while undergoing multiple reflections. At this time, if a defect 16 exists on the surface or inside of the substrate 10 to be measured, the light is reflected by the defect 16 so that the condition for total reflection inside the substrate 10 to be measured is not satisfied, and a part of the light is left on the substrate 10 to be measured. Is emitted. Therefore, by detecting the light emitted on the substrate 10 to be measured in this manner by the photodetector 18, the substrate 1 to be measured is detected.
0 defect 16 can be detected.

Next, the detection signal from the photodetector 18 is input to the arithmetic unit 26, and the arithmetic unit 26 analyzes the position of the defect on the surface of the substrate 10 to be measured together with the position signal from the XY direction moving mechanism 24. Do. The analysis result is displayed on the display device 28.
It can be displayed as a two-dimensional or three-dimensional distribution image of the defect 16 on the surface of the substrate 10 to be measured.

Next, the position of the photodetector 18 with respect to the substrate 10 to be measured is moved by the XY direction moving mechanism 24, and the above-described defect detection is repeated at each moving position, thereby detecting a defect over a wide range of the substrate 10 to be measured. It is possible to Thus, the detection of the defect on the substrate is completed.

As described above, according to this embodiment, during multiple reflection inside the substrate, the defect is detected by detecting the light scattered by the defect on the substrate surface. The detection can be performed at high speed in the area, and the throughput of the defect inspection process is greatly improved.

When infrared light is used as light incident on the substrate 10 to be measured, the inside of the substrate 10 to be measured is reflected multiple times,
The light emitted from the end face opposite to the end face on which the light is incident is introduced into a spectroscope and subjected to infrared Fourier spectroscopy, whereby it is possible to inspect the surface of the substrate to be measured 10 for contamination by organic substances. A method of measuring a surface state by multiple reflection of infrared rays is described in, for example, Japanese Patent Application No. 11-95853 by the same applicant.
It is described in the specification.

In addition, in addition to the above-described configuration, the photodetector 1
A photomultiplier or the like may be attached as an optical amplification function at the front of the eighth stage. Thereby, the measured substrate 10
It becomes possible to detect weaker scattered light from the surface. Therefore, it is possible to detect the defect 16 on the measured substrate 10 with higher sensitivity.

In the above-described embodiment, the photodetector 18 is moved on the substrate 10 to be measured by the XY direction moving mechanism 24. Conversely, the substrate mounting table 12 is moved with respect to the photodetector 18. May be.

[Second Embodiment] FIGS. 3 and 4 show a method and an apparatus for detecting a defect of a substrate according to a second embodiment of the present invention.
This will be described with reference to FIG. FIG. 3 is a perspective view showing a configuration of the substrate defect detection apparatus according to the embodiment of the present invention, and FIG. 4 is a sectional view thereof. The same components as those of the substrate defect detection method and apparatus according to the first embodiment are denoted by the same reference numerals, and description thereof will be omitted or simplified.

The present embodiment enables the apparatus for detecting defects of a substrate according to the first embodiment to detect not only defects on the surface of a substrate but also defects inside the substrate.

As shown in FIGS. 3 and 4, the basic configuration of the substrate defect detection device according to the present embodiment is the same as that of the substrate defect detection device according to the first embodiment.

The substrate defect detecting apparatus according to the present embodiment is
It is characterized in that a depth-of-focus adjusting optical system 30 is attached in front of the photodetector 18. That is, by changing the depth of focus of the focal depth adjusting optical system 30, not only the scattered light from the surface of the measured substrate 10 but also the scattered light inside the measured substrate 10 can be detected. Therefore, it is possible to detect not only the defect 16 on the surface of the measured substrate 19 but also the defect existing inside the measured substrate 10.

At this time, the depth of the position of the defect inside the measured substrate 10 can be determined from the change in the depth of focus. Therefore, it is possible to obtain a spatial distribution image of the defect inside the substrate 10 to be measured.

As described above, according to the present embodiment, the defect is detected by detecting the light scattered by the defect of the substrate during multiple reflection inside the substrate to be measured. High-speed detection can be performed in the target area, and the throughput of the defect inspection process is greatly improved.

[Third Embodiment] A method and an apparatus for detecting a defect of a substrate according to a third embodiment of the present invention will be described with reference to FIGS.
This will be described with reference to FIG. FIG. 5 is a perspective view showing the configuration of the substrate defect detection apparatus according to the present embodiment, and FIG. 6 is a sectional view thereof. The same components as those of the substrate defect detection method and apparatus according to the first embodiment are denoted by the same reference numerals, and description thereof will be omitted or simplified.

In this embodiment, the method and the apparatus for detecting a defect of a substrate according to the first or second embodiment are applied to a donut-shaped substrate used for a hard disk, an optical disk or the like. In addition, in this specification, the shape which is circular and whose inner peripheral portion is removed is referred to as “doughnut shape”.

First, the configuration of the substrate defect detecting apparatus according to the present embodiment will be explained with reference to FIGS.

A donut-shaped substrate 32 to be inspected for defects is placed on the substrate mounting table 12. Above the donut-shaped measured substrate 32, a photodetector 18 for detecting light scattered by the defect 16 of the donut-shaped measured substrate 32 is arranged. In addition, near the inner peripheral end face of the donut-shaped measured substrate 32, an incident optical system 14 for entering light into the donut-shaped measured substrate 32 is arranged.

The substrate mounting table 12 includes a rotation mechanism (not shown) for rotating the donut-shaped substrate 32 to be measured.

The incident optical system 14 is composed of a light source 20 for emitting light from ultraviolet rays to infrared rays and a reflecting mirror 22, and furthermore, an incident light angle for controlling the incident angle of light incident on the inside of the donut-shaped substrate 32 to be measured. An adjusting mechanism (not shown) is provided.

The photo detector 18 has an X-direction moving mechanism 34 for changing the position of the photo detector 18 with respect to the substrate 10 to be measured.

The computing device 26 is connected to the board mounting table 12, the photodetector 18, the X-direction moving mechanism 34, and the display device 28 for displaying the computation result.

Next, the operation of the substrate defect detecting apparatus according to the present embodiment will be explained.

The light emitted from the light source 20 is reflected by the reflecting mirror 22.
And is introduced into the inner peripheral end face of the donut-shaped substrate 32 to be measured. At this time, it is possible to control the angle of the light incident on the end face of the donut-shaped substrate 32 to be measured by the incident light angle adjusting mechanism, and the light emitted from the light source 20 is incident at a predetermined angle, or the incident angle is adjusted. Can be swept.

The photodetector 18 is a donut-shaped substrate 3 to be measured.
It is possible to detect the scattered light generated when the light propagating inside 2 is scattered by the defect 16. The detection signal at this time is input to the arithmetic unit 26. Further, the photodetector 18 can be moved by the X-direction moving mechanism 34 perpendicularly to the rotation direction of the donut-shaped substrate 32 to be measured. The position information of the X-direction moving mechanism 34 is input to the arithmetic unit 26 as a position signal.

The donut-shaped measured substrate 32 can be rotated by the rotating mechanism of the substrate mounting table 12, and the position information of the donut-shaped measured substrate 32 during rotation is input to the arithmetic unit 26 as a position signal.

The arithmetic unit 26 detects the detection signal from the photodetector 18, the position information from the rotating mechanism, and the X-direction moving mechanism 3.
4 together with the position signal from the
The position of the second defect 16 can be analyzed. The analysis result of the arithmetic unit 26 is displayed as a two-dimensional or three-dimensional distribution image of the defect 16 of the donut-shaped measured substrate 32 on the display device 2.
8 can be drawn.

Next, the method for detecting a defect of the substrate according to the present embodiment will be explained with reference to FIG.

First, the donut-shaped substrate 32 to be measured is placed on the substrate mounting table 12.

Next, the donut-shaped substrate 32 is rotated by the rotating mechanism of the substrate mounting table 12 around the center point of the donut-shaped substrate 32.

Next, the light emitted from the light source 20 of the incident optical system 14 is introduced to the inner peripheral end face of the donut-shaped substrate 32 to be measured. The wavelength of the light emitted from the light source 20 is selected according to the material of the donut-shaped substrate 32 to be measured, as in the first embodiment.

The light emitted from the light source 20 is incident on the incident optical system 1.
As in the first embodiment, the incident light angle adjusting mechanism of No. 4 introduces the light at an incident angle under the condition of multiple reflection inside the substrate and fixes it at that angle, or sweeps it within the range of the incident angle of multiple reflection. I do.

Under the above conditions, the donut-shaped substrate 32 to be measured
The light that has entered the inside propagates while rotating and reflecting inside the donut-shaped substrate 32 to be measured. At this time, if the defect 16 exists on the surface or inside the donut-shaped substrate 32 to be measured, the condition for total reflection inside the substrate is not satisfied,
Part of the light is emitted onto the donut-shaped substrate 32 to be measured.
Therefore, the defect 16 of the donut-shaped measured substrate 32 can be detected by detecting the light emitted on the donut-shaped measured substrate 32 by the photodetector 18 as described above.

The position of the photodetector 18 is changed from the inner circumference to the outer circumference of the rotating donut-shaped substrate 32 by the X-direction moving mechanism 34, and the above-described defect detection is performed. Can be detected in the entire area of.

The detection signal from the light detector 18 is input to the arithmetic unit 26. The arithmetic unit 26 combines the detection signal from the photodetector 18, the position signal from the rotation mechanism of the substrate mounting table 12, and the position signal from the X-direction movement mechanism 34, and outputs the donut-shaped substrate 32 to be measured. Analyze the position of the defect. The analysis result can be displayed on the display device 28 as a two-dimensional or three-dimensional distribution image of the defect 16 on the surface of the donut-shaped measured substrate 32. Thus, the detection of the defect on the substrate is completed.

As described above, according to the present embodiment, during multiple reflection inside the substrate, the defect is detected by detecting the light scattered by the defect on the substrate surface. Detection can be performed in a wide inspection target area at high speed, and the throughput of the defect inspection process is greatly improved.

In the above embodiment, light is introduced into the donut-shaped substrate 32 from the inner peripheral end face of the donut-shaped measured substrate 32 by the incident optical system 14. However, even if light is incident from the outer peripheral end face. Good.

[Modified Embodiments] Not limited to the embodiment of the present invention, various modifications are possible.

For example, an optical system for switching the observable area of the substrate 10 to be measured, for example, a wide-angle lens for observing a wide area, a microlens for observing a slightly narrow area, and the like are provided in front of the photodetector 18. May be attached.

In each of the above embodiments, the substrate defect detecting device is used alone in each case. However, various types of microscopic techniques having high resolution, such as a near-field optical application prober and a kind of scanning probe microscope, are used. It may be used in combination with a certain atomic force microscope or the like. That is, the substrate defect detection method is a preliminary detection method (screening method),
The defective area detected in this way may be further inspected microscopically by a spatially high-resolution analysis method. This enables a detailed analysis of the shape and microstructure of the defect on the substrate surface. Further, it is easy to identify the position of a defect to be observed in a wide inspection area, which is difficult with a microscopic technique such as an atomic force microscope alone, and the working efficiency is greatly improved.

In this case, first, a defect on the substrate surface is detected by the substrate defect detection device, and the position of the defect on the substrate surface is identified. Subsequently, based on the measurement of the substrate defect detection device, the combined measurement section of the microtechnology is introduced to the position of the defect, and high-resolution observation of the defect is performed.

Further, the apparatus for detecting a defect of a substrate may be combined with a microscopic technique for acquiring information on the unevenness of the substrate surface, such as an atomic force microscope. By the microscopic technique for acquiring unevenness information, defects on the substrate surface can be clearly distinguished from particles attached to the substrate surface, and more accurate defect detection becomes possible.

[0085]

As described above, according to the present invention, light is incident on the substrate to be measured so that the light is reflected multiple times within the substrate to be measured, and the light propagating inside the substrate to be measured is reflected on the surface of the substrate or the substrate. Detects scattered light caused by reflection by internal defects, and detects the defect of the substrate to be measured based on the detected scattered light, so that a defect of an optically transparent substrate such as a semiconductor substrate or a glass substrate is detected. Detection can be performed in a wide inspection target area at high speed.

[Brief description of the drawings]

FIG. 1 is a perspective view showing the structure of a substrate defect detection device according to a first embodiment of the present invention.

FIG. 2 is a sectional view showing the structure of the substrate defect detection apparatus according to the first embodiment of the present invention.

FIG. 3 is a perspective view showing a structure of a substrate defect detection device according to a second embodiment of the present invention.

FIG. 4 is a cross-sectional view illustrating a structure of a substrate defect detection device according to a second embodiment of the present invention.

FIG. 5 is a perspective view illustrating a structure of a substrate defect detection apparatus according to a third embodiment of the present invention.

FIG. 6 is a cross-sectional view illustrating a structure of a substrate defect detection apparatus according to a third embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 ... Substrate to be measured 12 ... Substrate mounting stand 14 ... Incident optical system 16 ... Defect 18 ... Photodetector 20 ... Light source 22 ... Reflector 24 ... XY-direction moving mechanism 26 ... Computing device 28 ... Display device 30 ... Focal depth adjusting optics System 32: Donut-shaped substrate to be measured 34 ... X-direction moving mechanism

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Claims (13)

[Claims] 1. A light incident means which enters the inside of a substrate to be measured so that light emitted from a light source is multiple-reflected inside the substrate to be measured; A light detection unit that detects scattered light generated by being scattered by a defect on the surface or inside of the substrate; and the measured substrate of the defect based on a relative positional relationship between the light detection unit and the measured substrate. A substrate defect detecting device, comprising: a position specifying unit that specifies a position in a plane. 2. The substrate defect detecting apparatus according to claim 1, wherein said light incident means is an incident angle of light incident on the inside of the measured substrate within a range where the light is reflected multiple times inside the measured substrate. A substrate defect detection device, which sweeps the substrate. 3. The substrate defect detecting device according to claim 1, further comprising a position control unit that moves a relative position between the substrate to be measured and the light detection unit. Defect detection device. 4. The substrate defect detecting device according to claim 1, wherein the light detecting unit includes a depth detecting unit that detects a depth of the defect in the substrate to be measured. A substrate defect detection device, further comprising: 5. The apparatus for detecting a defect of a substrate according to claim 1, further comprising a spectroscopic analyzer that performs spectroscopic analysis of light emitted after multiple reflection inside the substrate to be measured. And measuring a contaminant adhering to the substrate to be measured based on a result of the measurement by the spectroscope. 6. The defect detecting apparatus for a substrate according to claim 1, further comprising: a defect analyzing unit that analyzes the defect whose position is specified by the position specifying unit. Substrate defect detection device. 7. A multi-reflection inside a substrate to be measured,
Light is incident on the substrate to be measured, and light propagating inside the substrate to be measured detects scattered light generated by being reflected by a defect on the surface or inside the substrate to be measured.Based on the detected scattered light, A method of detecting a defect of a substrate, comprising detecting the defect of the substrate to be measured. 8. The method for detecting a defect of a substrate according to claim 7, wherein an incident angle of the light incident on the inside of the substrate to be measured is swept within a range where the light is reflected multiple times inside the substrate to be measured. Substrate defect detection method. 9. The method for detecting a defect of a substrate according to claim 7, wherein the measurement is performed while changing a relative position between a photodetector for detecting the scattered light and the substrate to be measured. A defect detection method for a substrate, comprising detecting a defect over substantially the entire surface of the substrate. 10. The method for detecting defects of a substrate according to claim 7, wherein the substrate to be measured has a substantially rectangular shape, and light is simultaneously incident on one end surface of the substrate to be measured. A method for detecting a defect of a substrate, comprising: 11. The substrate defect detection method according to claim 7, wherein the substrate to be measured has a substantially donut shape, and the substrate to be measured has an inner peripheral end surface or an outer peripheral end surface. A method for detecting defects on a substrate, comprising introducing light. 12. The method for detecting a defect of a substrate according to claim 7, wherein light emitted after multiple reflection inside the substrate to be measured is spectrally analyzed and attached to the substrate to be measured. A method for detecting a defect of a substrate, comprising: measuring a contaminant in the substrate. 13. A method for inspecting a substrate to be measured over a wide range by the method for detecting a defect of a substrate according to any one of claims 7 to 12, based on position information of the defect identified by the method for detecting a defect. A method for analyzing a defect of a substrate, wherein the analysis is performed for a narrow range including the defect.