JP2001358184A - Wafer prober and circuit measuring method using the same - Google Patents

Abstract

(57) [Problem] To provide a wafer prober and a measurement method using the wafer prober which do not require an overlapping alignment step. SOLUTION: In a wafer prober for mounting a substrate on a stage and bringing a probe into contact with a circuit formed on the substrate to measure a high-frequency characteristic of the circuit, a rotation angle at which the stage is rotated from a reference position is determined. Storage means for storing;
Rotating means for rotating the stage, and control means for controlling the rotating means so that the stage has a rotation angle stored in the storage means.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a wafer prober and a method for measuring a circuit using the same.

[0002]

2. Description of the Background Art FIG. Also, wafer prober 2
FIG. As shown in FIGS. 15 and 16, the wafer prober 200 includes a base 1 and a stage rotation unit 2 provided on the base 1 so as to be rotatable in the θ direction. A wafer stage 3 on which a wafer on which a circuit is formed is mounted and a substage 4 on which an impedance calibration wafer is mounted are provided on the stage rotating unit 2. The wafer stage 3 and the sub-stage 4 are fixed on the stage rotating unit 2 and rotate together with the stage rotating unit 2. The wafer prober 200 includes, for example, a pair of high-frequency probe heads 5. The probe pins (not shown) of each probe head 5 are arranged so as to be aligned along the X-axis direction in FIG. A high-frequency cable 6 is connected to each probe head 5, and the high-frequency cable 6 is connected to a measuring device (not shown). In the wafer prober 200, the position of the probe head 5 can be fixed, while the base 1 can be moved in the X-axis direction and the Y-axis direction by a step motor or the like. The base 1 that has moved to the predetermined measurement position rises by a certain distance in the Z-axis direction at that position. As a result, the plurality of circuits (not shown) formed on the wafer mounted on the wafer stage 3 are brought into contact with the probe pins of the probe head 5, and the high-frequency characteristics of each circuit are measured.

FIG. 21 is a flowchart for measuring high-frequency characteristics. A method for measuring high-frequency characteristics will be described with reference to this flowchart. Note that the measurement of the high-frequency characteristics of the circuit, for example, the S parameter, is performed in an inspection process of a plurality of circuits formed on the wafer, and is referred to as a 100% inspection process.

First, in step S101, the impedance calibration substrate 7 is fixed on the sub-stage 4. In step S102, the measurement wafer 8 is fixed on the wafer stage 3. A plurality of circuits are formed on the wafer 8 in a matrix along the Xs-axis and Ys-axis directions. In this state, the wafer stage 3, the sub-stage 4, and the high-frequency probe head 5 are sufficiently separated in the Z-axis direction in FIG.

[0005] Next, in S103, the temperature of the wafer 8 and the impedance calibration substrate 7 is raised (cooled) to a target temperature (first set temperature), and is maintained at the target temperature. Then, S1
At 04, the stage rotating unit 2 is rotated in the θ direction, and the reference circuit on the impedance calibration board 7 and the probe head 5 are rotated.
The sub-stage 4 is aligned so that the directions of the probe pins are aligned. Next, in S105, the probe head 5 is lowered to fix the distance between the probe head 5 and the impedance calibration substrate 7 at a predetermined distance (hereinafter, referred to as "measurement distance"). Next, the step of S106 is performed. In the step of S106, the base 1 is mechanically raised by a predetermined measurement distance, and the reference circuit of the impedance calibration board 7 is brought into contact with the probe pins.

FIGS. 17 and 18 are a top view and a side view of the wafer prober 200 in S106. As shown in the figure, with the reference circuit of the impedance calibration board 7 in contact with the probe pins, the impedance calibration board 7
Of the reference circuit is measured, and a measurement error (error term) of the measurement system including the wafer prober 200 is obtained. Such a measurement error is used for correcting a high-frequency characteristic of a circuit to be measured in a later step. When the step of S106 is completed, the base 1 is lowered by the measurement distance in the Z-axis direction, and the probe pins are separated from the reference circuit of the impedance calibration board 7.

Next, after the space between the wafer stage 3 and the high-frequency probe head 5 in the Z-axis direction is sufficiently separated, S1
At 07, the stage rotating unit 2 is rotated in the θ direction, and the X-axis direction and Y-axis direction of the wafer prober 200 and the X-
The alignment is performed so that the s-axis direction and the Ys-axis direction match. Next, in S108, the probe head 5 is lowered to fix the distance between the wafer 8 and the probe pins at a predetermined measurement distance. Subsequently, in S109, the high frequency characteristics of each circuit formed on the wafer 8 are measured. In such a measurement process, after the base 1 moves below the probe head 5 so that the circuit on the wafer 8 is arranged, the base 1
Rises by a predetermined measurement distance, and the circuit on the wafer 8 is brought into contact with the probe pins of the probe head 5 to perform measurement.

FIGS. 19 and 20 are a top view and a side view of the wafer prober 200 in S109. As shown, high-frequency characteristics such as S-parameters are measured in a state where the circuit on the wafer 8 is in contact with the probe pins. After the circuit 1 and the probe pin are brought into contact with each other to perform high-frequency measurement, the base 1 is lowered by a predetermined measurement distance in the Z-axis direction. Subsequently, for example, after the base 1 is moved in the X-axis direction, the base 1 is raised by a predetermined measurement distance to bring the adjacent circuit into contact with the probe pins. In this state, the high frequency characteristics of the adjacent circuit are measured. In S109, the high-frequency characteristics of all the circuits on the wafer 7 are measured by automatically repeating the measurement.

In S109, after the measurement at the first set temperature is performed, the flow returns to S103 to raise (fall) the temperature to the next target temperature (second set temperature). Similarly, the steps S104 to S109 are performed. The measurement of the high frequency characteristics at the second set temperature is repeated. Further, when the measurement is performed while changing the set temperature, the steps S103 to S109 are repeated.

[0010]

When the measurement is performed while changing the set temperature as described above, the impedance of the probe head 5 and the cable 6 changes depending on the set temperature. so,
It was necessary to measure the wafer 8. However, in the wafer prober 200, since the wafer stage 3 and the sub-stage 7 are fixed on the stage rotating unit 4, respectively, when one alignment is performed, the other alignment is shifted. For this reason, each time the set temperature is changed, the alignment of the sub-stage (S104) and the alignment of the wafer stage (S107) must be repeated, and duplicate operations are performed, resulting in an increase in measurement time and measurement labor. Was. In addition, repeating such a complicated alignment process has caused a measurement error.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a wafer prober and a circuit measurement method using the same, which can reduce the number of alignment steps when performing high-frequency measurement of a circuit while changing a set temperature. .

[0012]

SUMMARY OF THE INVENTION The present invention is a wafer prober for measuring a high frequency characteristic of a circuit by placing a substrate on a stage and bringing a probe into contact with a circuit formed on the substrate, A stage that rotates around a substantially vertical central axis and places a substrate thereon, a probe that contacts a circuit formed on the substrate and measures the high-frequency characteristics of the circuit, and moves the stage from a reference position. Including storage means for storing the rotated rotation angle, rotation means for rotating the stage, and control means for controlling the rotation means so that the stage has the rotation angle stored in the storage means Is a wafer prober. By using such a wafer prober, complicated alignment steps that have been performed repeatedly can be reduced. In addition, by reducing the number of complicated alignment steps, occurrence of operation errors can be prevented, and accurate measurement can be performed.

Further, the stage is a stage on which at least two substrates can be placed, and the angle of rotation of the stage is set so that the circuit formed on each substrate and the prober come into contact with each other. A wafer prober characterized by a rotation angle may be used.

Further, according to the present invention, a substrate is placed on a stage, and a probe is brought into contact with a circuit formed on the substrate.
A wafer prober for measuring high-frequency characteristics of the circuit, the wafer prober rotating around a substantially vertical center axis, at least two stages for mounting a substrate thereon, and contacting a circuit formed on the substrate, A wafer prober including a probe for measuring high-frequency characteristics of the circuit and fixing means for fixing each stage at a predetermined rotational position. By using such a wafer prober, complicated alignment steps that have been performed repeatedly can be reduced.

[0015] The fixing means is means for fixing each of the stages at a rotational position where the stage is rotated so that the circuit of each of the substrates mounted thereon comes into contact with the probe. Is preferred.

Further, according to the present invention, the stage comprises a first stage for mounting a calibration substrate and a second stage for mounting a measurement substrate, wherein the first stage and the second stage are
An upper surface of the calibration substrate mounted on the first stage and the second substrate;
There is also provided a wafer prober provided so that an upper surface of the measurement substrate placed on the stage is substantially flush with the upper surface of the measurement substrate. In such a wafer prober, it is not necessary to change the height of the prober between the calibration process and the measurement process, and the process can be simplified.

It is preferable that an interval between the upper surface of the first stage and the upper surface of the second stage in a direction substantially perpendicular to the stage is 400 to 600 μm.

The above-mentioned stage is a first stage on which a calibration substrate is placed.
It consists of a stage and a second stage on which the measurement substrate is placed,
It is preferable that the height of at least one of the stages in the direction substantially perpendicular to the stage is variable. This is because, even when the thickness of the measurement substrate or the calibration substrate changes, the height of the upper surface of each substrate can be adjusted so as to be substantially the same.

Further, according to the present invention, a substrate is placed on a stage, and a probe is brought into contact with a circuit formed on the substrate.
A wafer prober for measuring high-frequency characteristics of the circuit, a stage on which a substrate is placed, a probe that contacts a circuit formed on the substrate and measures the high-frequency characteristics of the circuit, Moving means for moving the stage so as to press the circuit toward the sensor, sensor means for detecting contact between the probe and the circuit, and control means for controlling the moving means using the sensor means It is also a wafer prober characterized by the above. In such a wafer prober, the provision of the sensor means can prevent the probe head from being in contact with the substrate or the like, and prevent the probe head from being damaged.

Preferably, the control means is means for fixing a distance between the probe and the circuit at a position where the contact between the probe and the circuit is detected by the sensor means.

Preferably, the sensor means is a contact sensor or a distance sensor.

Further, according to the present invention, there is provided a step of mounting a calibration substrate and a measurement substrate on a stage which rotates around a substantially vertical center axis, wherein a circuit formed on the calibration substrate is brought into contact with a wafer prober. A calibration step of rotating the stage by a first rotation angle from a reference position to measure the high-frequency characteristics of the circuit; a step of storing the first rotation angle in storage means; A step of rotating the stage by a second rotation angle from a reference position so that the circuit and the wafer prober come into contact with each other, and measuring a high-frequency characteristic of the circuit; and a step of storing the second rotation angle in storage means. In the case where the calibration step and the measurement step are repeated, the calibration step reads the first rotation angle from the storage means, and sets the rotation angle of the stage to the first rotation angle. , The proofreading group Measuring the high-frequency characteristics of the circuit. The measuring step reads the second rotation angle from the storage means, sets the rotation angle of the stage to the second rotation angle, and A method for measuring a circuit, comprising a step of measuring high-frequency characteristics of the circuit. In such a circuit measurement method, the alignment steps that have been performed repeatedly can be reduced, the measurement time and measurement labor can be reduced, and finally, the circuit manufacturing cost can be reduced.

Further, according to the present invention, there are provided a first stage and a second stage which rotate around a substantially vertical center axis, a calibration substrate is placed on the first stage, and a measurement substrate is placed on the second stage. And a calibration step of measuring the high-frequency characteristics of the circuit by rotating the first stage by a first rotation angle from a reference position so that the circuit formed on the calibration substrate and the wafer prober come into contact with each other. Fixing the first stage at the first rotation angle, and moving the second stage from the reference position by a second rotation angle so that the circuit formed on the measurement substrate and the wafer prober come into contact with each other. A method of measuring a circuit, comprising: a step of rotating to measure a high-frequency characteristic of the circuit; and a step of fixing the second stage at the second rotation angle. Even with such a circuit measurement method, the alignment steps that have been performed repeatedly can be reduced, the measurement time and measurement labor can be reduced, and ultimately the circuit manufacturing cost can be reduced.

Further, according to the present invention, there is provided a circuit wherein an inspection step comprising a set of the calibration step and the measurement step is repeatedly performed while changing the temperature of the calibration substrate and the measurement substrate in each set. It is also a measuring method.

[0025]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 FIG. 1 is a flowchart of a method for inspecting high-frequency characteristics using the wafer prober 100 according to the present embodiment. 2 and 3 are top views of the wafer prober 100 used in the inspection method. The wafer prober 100 shown in FIGS.
And a stage rotation unit 2 provided on the base 1 so as to be rotatable in the θ direction. A wafer stage 3 on which a wafer on which a circuit is formed is mounted and a substage 4 on which an impedance calibration wafer is mounted are provided on the stage rotating unit 2. The wafer stage 3 and the sub-stage 4 are fixed on the stage rotating unit 2 and rotate together with the stage rotating unit 2. Also, the wafer prober 100
Includes, for example, a pair of high-frequency probe heads 5. The probe pins (not shown) of each probe head 5 are shown in FIG.
Are arranged along the X-axis direction. A high-frequency cable 6 is connected to each probe head 5, and the high-frequency cable 6 is connected to a measuring device (not shown). In the wafer prober 100, the position of the probe head 5 can be fixed, whereas the base 1 can be moved in the X-axis direction and the Y-axis direction by a stepping motor or the like. The base 1 moved to a predetermined measurement position
At that position, it rises by a certain distance in the Z-axis direction. Thereby, the plurality of circuits formed on the wafer mounted on the wafer stage 3 are brought into contact with the probe pins of the probe head 5, and the high-frequency characteristics of each circuit are measured. Also,
The wafer prober 100 has an alignment angle θ1 of the sub-stage 4 and an alignment angle θ2 of the wafer stage 3.
And a setting device (not shown) for setting the angle. Therefore, the wafer stage 3 and the sub-stage 4 are fixed on the stage rotating unit 2, and the stage rotating unit 2 can rotate on the base 1 in the θ direction.

In the inspection and measurement method according to this embodiment, as shown in the flowchart of FIG. 1, first, the impedance calibration substrate 7 is fixed on the substage 4 in S1. In S2, the measurement wafer 8 is fixed on the wafer stage 3. As shown in FIG. 2, a plurality of circuits 50 are formed on the wafer 8 in a matrix along the Xs axis and the Ys axis. In such a state, the wafer stage 3, the sub-stage 4, and the high-frequency probe head 5 are sufficiently separated in the Z-axis direction.

Next, in S3, the temperature of the wafer 8 and the impedance calibration substrate 7 is raised (cooled) to an initial temperature (first set temperature) and maintained at such a temperature. Then, S4
Then, the stage rotating unit 2 is rotated in the θ direction, and the reference circuit on the impedance calibration substrate 7 is aligned with the sub-stage 4. In the present embodiment, the rotation angle of the stage rotation unit 2 in the θ direction can be read.

Next, at S5, an alignment angle θ at which the substage 4 is aligned with respect to the probe head 5 is obtained.
1 is read and stored in, for example, a storage device or the like. In particular, it is preferable that the rotation angle of the stage rotating unit 2 is read as an electric signal, and the signal is stored in a storage device. A computer is usually used for the storage device.

Next, in step S6, the probe head 5 is lowered to set a distance between the probe head 5 and the impedance calibration board 7 as a predetermined measurement interval. Next, in step S7, the base 1 is raised by a predetermined measurement distance, and the reference circuit of the impedance calibration board 7 is brought into contact with the probe pins to measure the high-frequency characteristics of the reference circuit of the impedance calibration board 7.

FIG. 2 shows the wafer prober 10 in S7.
0 is a top view. As shown in the drawing, while the reference circuit (not shown) of the impedance calibration board 7 is in contact with the probe pins (not shown) of the probe head 5, the impedance of the impedance calibration board 7 is measured, and the wafer prober is measured. The measurement error (error term) of the measurement system including 100 is determined. Such a measurement error is used for correcting a measurement value of a high-frequency characteristic measured in a later step. After the step S7 is completed, the base 1 is lowered by the measurement distance in the Z-axis direction, and the probe pins are separated from the reference circuit of the impedance calibration board 7.

Next, after the space between the wafer stage 3 and the high-frequency probe head 5 in the Z-axis direction is sufficiently separated, S8
Then, the stage rotating unit 2 is rotated in the θ direction, and alignment is performed so that the X-axis direction and the Y-axis direction of the wafer prober 100 match the Xs-axis direction and the Ys-axis direction of the wafer 8.

Next, in S9, the alignment angle θ2 is
The data is read by the reading means used in S5 and stored in the storage device. In particular, it is preferable that the rotation angle of the stage rotating unit 2 is read as an electric signal, and the signal is stored in a storage device.

Next, in step S10, the probe head 5 is lowered to set a distance between the wafer 8 and the probe pins to a predetermined measurement distance. Subsequently, in S11, the high-frequency characteristics of each circuit on the wafer 8 at the initial temperature (first set temperature) are measured. In such a measurement step, the base 1 is raised by a predetermined measurement distance, and the circuit on the wafer 8 is brought into contact with the probe pins to perform measurement.

FIG. 3 shows the wafer prober 1 in S11.
00 is a top view of FIG. As shown, high-frequency characteristics such as S-parameters are measured in a state where the circuit on the wafer 8 is in contact with the probe pins. After the circuit 1 and the probe pins are brought into contact with each other to perform high-frequency measurement, the base 1 is lowered by a predetermined measurement distance in the Z-axis direction. Subsequently, for example, after moving the base 1 in the X-axis direction, the base 1 is raised by a predetermined measurement distance, and an adjacent circuit is brought into contact with a probe pin to measure high-frequency characteristics. S11
In this case, the measurement of the high-frequency characteristics is performed on all the circuits on the wafer 8 by automatically repeating the measurement process.

After the measurement at the first set temperature, S1
In Step 2, the impedance calibration substrate 7 and the wafer 8 are heated (cooled) to the next target temperature (second set temperature).

Next, in S13, the alignment angle θ of the impedance calibration substrate 7 stored in the storage device in S5.
1 is read, and the stage rotating unit 2 is rotated such that the rotation angle of the stage rotating unit 2 becomes θ1. For example, it is preferable to control the drive motor connected to the rotation axis of the stage rotation unit 2 by a signal read from the storage device, and set the rotation angle of the stage rotation unit 2 to θ1. In this manner, the impedance calibration substrate 7 can be aligned only by setting the rotation angle of the stage rotation unit 2 to θ1.

Next, similarly to S6 and S7, S14 and S15
Then, the high frequency characteristics of the reference circuit of the impedance calibration board 7 are measured, and a measurement error (error term) is obtained.

Next, in step S16, the alignment angle θ2 of the wafer stage 3 is read out, and the stage rotation unit 2 is rotated so that the rotation angle of the stage rotation unit 2 becomes θ2. Also in this case, it is preferable to control the drive motor connected to the rotation shaft of the stage rotation unit 2 to set the rotation angle of the stage rotation unit 2 to θ2. Also in this case, alignment of the wafer 8 can be performed only by setting the rotation angle of the stage rotation unit 2 to θ2.

Next, similarly to S10 and S11, S17 and S1
At 8, the high frequency characteristics at the second set temperature are measured. Further, when the measurement is performed while changing the set temperature, the steps S12 to S18 are repeated.

As described above, in the measuring method according to the present embodiment, when measuring the high-frequency characteristics of the circuit at different temperatures, the alignment angle θ1 is stored in the alignment step of the impedance calibration substrate 7 and the alignment of the wafer 8 is performed. By storing the alignment angle θ2 in the step, the second and subsequent alignment steps can be easily performed. These alignment steps usually involve
Since a time of about 5 to 10 minutes is required, for example, when performing high-frequency measurement at 20 different set temperatures, 10
The alignment work time of about 0 to 200 minutes can be reduced.

That is, by using such a measurement method, complicated alignment steps which have been performed repeatedly can be performed only once, and the measurement time can be greatly reduced. In addition, by reducing the number of complicated alignment steps, occurrence of operation errors can be prevented, and accurate measurement can be performed.

Embodiment 2 4 and 5 show the wafer prober 101 according to the present embodiment. FIG. 4 shows a top view and FIG. 5 shows a side view. In the wafer prober 101, the wafer stage 3 and the sub-stage 9 are provided directly on the base 1. The wafer stage 3 and the sub-stage 9 are independently rotated around the central axis by θ.
3. It can rotate in the θ4 direction. Other components are the same as those of the wafer prober 100 described above.

In the wafer prober 101, as shown in FIG. 6, first, the impedance calibration substrate 7 is fixed on the sub-stage 9, and the wafer 8 is fixed on the wafer stage 3. Next, the substage 9 is rotated in the θ3 direction to perform alignment of the impedance calibration substrate 7. Substage 9 is in such an alignment state,
It is fixed on the base 1.

Next, the reference circuit (not shown) of the impedance calibration board 7 and the probe pins (not shown) of the probe head 5 are brought into contact with each other in the same process as in the first embodiment.
Measure the high-frequency characteristics of the reference circuit and determine the measurement error (error term).

Next, after the probe head 5 is separated from the impedance calibration substrate 7, the base 1 is moved so that the probe head 5 is located above the wafer 8 mounted on the wafer stage 3. Then, the wafer stage 3
Is rotated in the θ4 direction to align the wafer 8. The wafer stage 3 is fixed on the base 1 in such an alignment state.

Next, the circuit (not shown) provided on the wafer 8 is brought into contact with the probe pins of the probe head 5 to
The high frequency characteristics of each circuit are measured. In such a process, the first
The high-frequency characteristics at the set temperature are measured.

Next, the temperatures of the impedance calibration substrate 7 and the wafer 8 are raised (or lowered) to the second set temperature. In this state, the measurement using the impedance calibration board 7 is performed again. However, since the substage 9 to which the impedance calibration board 7 is fixed is fixed in the alignment state, the impedance calibration is performed without performing the alignment work again. The measurement of the substrate 7 can be performed.

Next, high frequency measurement of the circuit on the wafer 8 is performed. Also in this case, since the wafer 8 is fixed in the aligned state, the high frequency measurement of the circuit on the wafer 8 can be performed without performing the alignment work again. Furthermore, when performing high-frequency measurement while changing the set temperature, high-frequency characteristics can be measured without repeating the alignment step by repeating such a step. Therefore, it is possible to significantly reduce the measurement time by reducing the complicated alignment steps that have been performed repeatedly, and also to prevent the occurrence of operation errors. FIG. 6 shows the probe head 5 measuring the impedance calibration substrate 7 and the probe head 5 measuring the wafer 8 in the same drawing. Set of probe heads 5
Having only

Embodiment 3 7 and 8 show the wafer prober 103 according to the present embodiment. FIG. 7 shows the wafer prober 103 measuring the impedance calibration substrate 7.
FIG. 8 shows the wafer prober 103 during measurement of the wafer 8.

Normally, the thickness of the wafer 8 is about 500 μm, while the thickness of the impedance calibration substrate 7 is 1 μm.
It is about 000 μm. For this reason, for example, as shown in FIG. 5, when the heights of the upper surfaces of the wafer stage 3 and the substage 9 are the same, when the wafer 8 and the like are mounted on each stage,
The surface of the impedance calibration substrate 7 is higher than the surface of the wafer 8 by about 500 μm. Since the above-described measurement distance (the distance at which the base 1 rises and falls when measuring the high-frequency characteristics) is constant, it is necessary to change the height of the probe head 5 between when measuring the impedance calibration substrate 7 and when measuring the wafer 8. Occurs. In particular, when measuring high-frequency characteristics at a plurality of set temperatures, the operation becomes complicated. Further, if the change of the height of the probe head 5 is forgotten, the probe head 5 may come into contact with the impedance calibration substrate 7 and the probe head 5 may be broken.

Therefore, in the wafer prober 103 according to the present embodiment, the height of the wafer stage 3 and the height of the substage 9 are different so that the surface of the wafer 8 and the surface of the impedance calibration substrate 7 are substantially at the same height. I did it. Specifically, the surface of the sub-stage 9 is configured to be lower than the surface of the wafer stage 3 by about 400 to 600 μm, preferably about 500 μm.

By using such a wafer prober 103, it is not necessary to greatly change the height of the probe head 5 when performing an inspection at a plurality of set temperatures, and the work becomes easy. In addition, it is possible to prevent the probe head 5 from being broken due to the contact between the wafer 8 and the like and the probe head 5, which is caused by the insufficient height adjustment.

Embodiment 4 9 and 10 show a wafer prober 104 according to the present embodiment. FIG. 9 shows the wafer prober 104 during measurement of the impedance calibration substrate 7.
FIG. 10 is a side view of the wafer prober 104 during measurement of the wafer 8. In the wafer prober 104 according to the present embodiment, an adjusting means 10 for adjusting the height of the substage 9 is provided below the substage 9. Another configuration is the wafer prober 10 described above.
Same as 3. For example, a cylinder or the like is used as the adjusting unit 10.

In the wafer prober 104, the adjusting means 10
Can be used to adjust the height of the impedance calibration substrate 7 so that the upper surface of the impedance calibration substrate 7 is at the same height as the upper surface of the wafer 8. Therefore, when the measurement of the impedance calibration substrate 7 and the measurement of the wafer 8 are repeated,
It is not necessary to change the height of the probe head 5 each time. That is, the impedance calibration substrate 7 and the wafer 8
The probe head 5 is separated from the probe head 5 by a predetermined measurement distance when the high-frequency measurement is completed, but the measurement of each substrate is repeated only by moving the base 1 in the XY plane while maintaining the measurement distance. Can be. Accordingly, there is no need to separately move the probe head 5 in the Z-axis direction to adjust the height of the probe head 5, and the measurement process is simplified.

Embodiment 5 11 and 12 are side views of the wafer prober 105 according to the present embodiment. The wafer prober 105 has an adjusting unit 11 for adjusting the height of the substage 9 below the substage 9. Further, a contact sensor pin 12 is provided between the pair of probe heads 5 in a substantially vertical direction. Other configurations are the same as those of the above-described wafer prober 103.

The contact sensor pins 12 are fixed to the probe head 5 and move together with the probe head 5.
The tip of the contact sensor pin 12 is
The height is almost the same as the tip of the probe pin provided at the bottom. The contact sensor pin 12 detects the contact pressure (pressing pressure) at the tip, and the adjusting means 11 adjusts the height of the sub-stage 9 based on the detection result.

In FIG. 11, the upper surface of the impedance calibration substrate 7 is higher than the upper surface of the wafer 8. The height of the probe head 5 is set to a height at which the wafer 8 and the probe pins of the probe head 5 are in good contact with each other when the base 1 is moved up by the above-described measurement distance. In this state, when the base 1 is raised toward the probe head 5 by a predetermined measurement distance, the impedance calibration substrate 7 is strongly pressed against the probe head 5 and
This may cause damage to the product. Therefore, in the wafer prober 105 according to the present embodiment, as shown in FIG. 11, when the impedance calibration board 7 comes into contact with the probe pins of the probe head 5, the contact sensor pins 12 also come into contact with the impedance calibration board 7 at the same time. It has become. FIG.
When the base 1 is further raised from the state described above, the sub-stage 9 is lowered by the adjusting means 11 so that the pressure value detected by the contact sensor pins 12 does not exceed a certain value.

FIG. 12 shows a state in which the base 1 has risen by a predetermined measurement distance and stopped. The lowering of the substage 9 by the adjusting means 11 maintains the impedance calibration substrate 7 and the probe pins of the probe head 5 at a good contact pressure. As a result, high-frequency measurement of the impedance calibration substrate 7 can be performed in a good contact state. Further, contact between the impedance calibration substrate 7 and the probe head 5 can be prevented, and damage to the probe head 5 can be avoided.

FIGS. 13 and 14 show another wafer prober 106 according to the present embodiment. In such a wafer prober 106, a distance sensor 13 such as a laser distance sensor is provided instead of the contact sensor pin 12 described above. Further, below the sub-stage 4, an adjusting means 11 for adjusting the height of the sub-stage is provided. Other configurations are the same as those of the wafer prober 105 described above.

In the wafer prober 106, the base 1 is raised by a predetermined measurement distance while the height of the impedance calibration substrate 7 is detected by the distance sensor 13. FIG.
When the impedance calibration board 7 reaches the height at which the impedance calibration board 7 comes into contact with the probe pins of the probe head 5 as shown in 3, the sub-stage 4 is lowered using the adjusting means 11 so that the impedance calibration board 7 does not rise further. Let it.

FIG. 14 shows a state in which the base 1 has risen by a predetermined measurement distance and has stopped, and the height of the impedance calibration board 7 has been adjusted. In this state, the impedance calibration board 7 and the probe pins of the probe head 5 are connected. A good contact state results. Thus, high-frequency measurement can be performed in a good contact state, and contact between the impedance calibration substrate 7 and the probe head 5 can be prevented, and damage to the probe head 5 can be avoided.

In this embodiment, the substage 4
The height of the sub-stage 4 was adjusted by providing an adjusting means 11 below the sub-stage.
When the base 1 is raised to a certain height or higher, the probe head 5 can be raised to prevent contact between them. Further, in the present embodiment, the adjusting means 11 is provided below the sub-stage 4, but may be provided below the wafer stage 3.

[0063]

As is apparent from the above description, the wafer prober according to the present invention can reduce complicated alignment steps that have been performed repeatedly. In addition, by reducing the number of complicated alignment steps, occurrence of operation errors can be prevented, and accurate measurement can be performed.

Further, in the wafer prober according to the present invention, the probe head can be prevented from being damaged by avoiding contact between the probe head and the substrate or the like.

Further, in the method for measuring a circuit according to the present invention, the number of alignment steps performed repeatedly can be reduced.
Measurement time and measurement labor can be reduced.

[Brief description of the drawings]

FIG. 1 is a flowchart of a measurement method according to a first embodiment of the present invention.

FIG. 2 is a top view of the wafer prober according to the first embodiment of the present invention.

FIG. 3 is a top view of the wafer prober according to the first embodiment of the present invention.

FIG. 4 is a top view of a wafer prober according to a second embodiment of the present invention.

FIG. 5 is a side view of a wafer prober according to a second embodiment of the present invention.

FIG. 6 is a top view of the wafer prober according to the second embodiment of the present invention.

FIG. 7 is a side view of a wafer prober according to a third embodiment of the present invention.

FIG. 8 is a side view of the wafer prober according to the third embodiment of the present invention.

FIG. 9 is a side view of a wafer prober according to a fourth embodiment of the present invention.

FIG. 10 is a side view of a wafer prober according to a fourth embodiment of the present invention.

FIG. 11 is a side view of a wafer prober according to a fifth embodiment of the present invention.

FIG. 12 is a side view of a wafer prober according to a fifth embodiment of the present invention.

FIG. 13 is a side view of a wafer prober according to a fifth embodiment of the present invention.

FIG. 14 is a side view of a wafer prober according to a fifth embodiment of the present invention.

FIG. 15 is a top view of a wafer prober having a conventional structure.

FIG. 16 is a side view of a wafer prober having a conventional structure.

FIG. 17 is a top view of a wafer prober having a conventional structure.

FIG. 18 is a side view of a wafer prober having a conventional structure.

FIG. 19 is a top view of a wafer prober having a conventional structure.

FIG. 20 is a side view of a wafer prober having a conventional structure.

FIG. 21 is a flowchart of a conventional measurement method.

[Explanation of symbols]

1 base, 2 stage rotating section, 3 wafer stage, 4, 9 substage, 5 probe head, 6
High frequency cable, 7 Impedance calibration board, 8
Wafer, 10, 11 adjustment means, 12 contact sensor pins, 13 distance sensor, 100 wafer prober.

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2G011 AA02 AB10 AC06 AC32 AE03 AF06 2G032 AB13 AC01 AD03 AE02 AE04 AE10 AE11 AF01 4M106 AA01 AA02 BA01 BA14 CA09 DD06 DD13 DD15 DD30 DJ05 DJ06 DJ07 DJ21 DJ39

Claims (13)

[Claims] 1. A wafer prober for mounting a substrate on a stage and bringing a probe into contact with a circuit formed on the substrate to measure high-frequency characteristics of the circuit, wherein the wafer prober moves around a substantially vertical center axis. A stage that rotates and mounts a substrate thereon, a probe that contacts a circuit formed on the substrate and measures high-frequency characteristics of the circuit, and a rotation angle obtained by rotating the stage from a reference position is stored. A wafer prober comprising: storage means; rotation means for rotating the stage; and control means for controlling the rotation means so that the stage has a rotation angle stored in the storage means. The stage is a stage on which at least two substrates can be placed, and the angle of rotation of the stage is set so that a circuit formed on each substrate is in contact with the prober. 2. The wafer prober according to claim 1, wherein the rotation angle is a rotation angle. 3. A wafer prober for measuring a high frequency characteristic of a circuit by mounting a substrate on a stage and bringing a probe into contact with a circuit formed on the substrate, wherein the wafer prober is arranged around a substantially vertical center axis. At least two stages that rotate and place a substrate thereon, a probe that contacts a circuit formed on the substrate and measures high-frequency characteristics of the circuit, and fixes each stage at a predetermined rotational position. A wafer prober comprising: fixing means. 4. The means for fixing each of the stages at a rotational position where the fixing means is rotated so that the circuit of each of the substrates mounted thereon and the probe come into contact with each other. 4. The wafer prober according to claim 3, wherein 5. The apparatus according to claim 1, wherein the stage includes a first stage on which a calibration substrate is mounted and a second stage on which a measurement substrate is mounted. The first stage and the second stage are mounted on the first stage. 5. The wafer prober according to claim 3, wherein an upper surface of the calibration substrate and an upper surface of the measurement substrate mounted on the second stage are provided on substantially the same plane. 6. The apparatus according to claim 5, wherein an interval between the upper surface of the first stage and the upper surface of the second stage in a direction substantially perpendicular to the stage is 400 to 600 μm. Wafer prober. 7. The stage includes a first stage on which a calibration substrate is mounted and a second stage on which a measurement substrate is mounted, and at least one of the stages has a height substantially perpendicular to the stage. The wafer prober according to claim 3, wherein the wafer prober is variable. 8. A wafer prober for mounting a substrate on a stage, bringing a probe into contact with a circuit formed on the substrate, and measuring high-frequency characteristics of the circuit, wherein the substrate is mounted thereon. A stage, a probe that contacts a circuit formed on the substrate, and measures high-frequency characteristics of the circuit; moving means for moving the stage so as to press the circuit toward the probe; A wafer prober, comprising: sensor means for detecting contact with a circuit; and control means for controlling the moving means using the sensor means. 9. The apparatus according to claim 8, wherein the control means is means for fixing a distance between the probe and the circuit at a position where the contact between the probe and the circuit is detected by the sensor means. 2. A wafer prober according to item 1. 10. A sensor according to claim 8, wherein said sensor means is a contact sensor or a distance sensor.
2. A wafer prober according to item 1. 11. A step of mounting a calibration substrate and a measurement substrate on a stage that rotates around a substantially vertical center axis, wherein the circuit formed on the calibration substrate and the wafer prober are brought into contact with each other. A calibration step of rotating the stage from a reference position by a first rotation angle and measuring the high-frequency characteristics of the circuit; a step of storing the first rotation angle in storage means; a circuit formed on the measurement substrate and the wafer A step of rotating the stage from a reference position by a second rotation angle so that the prober comes into contact with the prober, and measuring a high-frequency characteristic of the circuit; and a step of storing the second rotation angle in storage means. When the calibration step and the measurement step are repeated, the calibration step reads the first rotation angle from the storage means, sets the rotation angle of the stage to the first rotation angle, and The circuit of Measuring the high frequency characteristics of the circuit. The measuring step reads the second rotation angle from the storage means, sets the rotation angle of the stage to the second rotation angle, A method for measuring a circuit, comprising a step of measuring high-frequency characteristics. 12. A first rotating about a substantially vertical central axis.
And a step of preparing a second stage, placing a calibration substrate on the first stage, and placing a measurement substrate on the second stage; and contacting a circuit formed on the calibration substrate with a wafer prober. A calibration step of rotating the first stage from a reference position by a first rotation angle to measure the high-frequency characteristics of the circuit; fixing the first stage at the first rotation angle; A measurement step of measuring the high-frequency characteristics of the circuit by rotating the second stage from a reference position by a second rotation angle so that the circuit formed on the substrate and the wafer prober come into contact with each other; And a step of fixing the second stage. 13. An inspection step comprising a set of the calibration step and the measurement step, wherein the inspection step is repeatedly performed by changing the temperature of the calibration substrate and the measurement substrate in each set. 3. The method for measuring a circuit according to 1.