JP2001358165A - Semiconductor element and liquid crystal display device on which the semiconductor element is mounted - Google Patents

Abstract

(57) [Summary] [PROBLEMS] To ensure a smooth flow of a paste-like material and the like, and to achieve a fine pitch of bumps. SOLUTION: A bump B1 mounted on a semiconductor mounting substrate via a paste-like material or a film-like material.
In the semiconductor device IC having
The cross section is an elliptical pillar shape, and the narrowed portion is arranged toward the outer peripheral direction of the semiconductor element IC.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD The present invention relates to an IC chip and an LS
The present invention relates to a semiconductor device such as an I chip and a liquid crystal display device on which the semiconductor device is mounted.

[0002]

2. Description of the Related Art As a semiconductor element such as an IC chip or an LSI chip having a bump, which is a protruding electrode, is advantageous for miniaturization of a substrate for mounting semiconductors and thinning of a module. It is widely used in electronic devices such as liquid crystal display devices. The bump, which is a protruding electrode, is made of a material such as solder or gold (A).
u), silver (Ag), copper (Cu), lead (Pd), nickel (Ni) or the like is used, and a cream-like method is used on a bump formed by a photolithography and plating method or a bump formed by a photolithography and plating method. Many methods, such as a method of printing and forming solder, a so-called transfer bump method, have conventionally been used.

Various methods have been proposed for mounting such a semiconductor device with bumps face down on a substrate. A typical method is as follows. First, there is a method of forming a so-called solder bump by forming a bump into a spherical shape or a hemispherical shape by solder, and melting and solidifying the solder bump by reflow to connect to a substrate electrode. Note that the bumps are gold bumps formed of gold, and solder is pre-coated on the electrodes of the substrate by plating or the like, and soldered by reflow in the same manner as the above method, preferably, the bonding strength between the semiconductor element and the substrate is secured. For this purpose, there is a method in which a sealing resin is sealed.

Second, when mounting a semiconductor element, a paste-like material or a film-like material is supplied over the entire mounting area on the substrate, and the semiconductor element is positioned by a mounting machine from above. Then, there is a method in which the paste-like material or the like is cured by heating and pressing means. Examples of the paste-like material or the film-like material include an anisotropic conductive film (ACF) and a thermocompression insulating resin.

Third, when mounting a semiconductor element, an anisotropic conductive film (Anisot conductive film) is formed only on the bumps of the semiconductor element.
After transferring materials such as ropic conductive film (ACF) and conductive adhesive (conductive paste) and curing them by heating means, encapsulation to secure the bonding between the semiconductor element and the substrate There is a method of pouring a resin for use and curing it. As the bumps of the second method and the third method,
It is usually a column-shaped (rectangular parallelepiped) or square-column-shaped (cylindrical) gold with a cross section, but a solder bump is formed at the tip of this gold bump in a spherical or hemispherical shape. Sometimes (bumps with multilayer structure).

[0006]

With the recent increase in the density of semiconductor elements and the further miniaturization of substrates for mounting semiconductors, the pitch of the bump arrangement tends to be narrower (fine bump pitch). ). As shown in FIGS. 12 and 13, the bumps B are arranged in a plurality of so-called staggered arrangements, and the finer pitches of the bumps B are further reduced.

On the other hand, in mounting a semiconductor element in a liquid crystal display device, there is COG (chip on glass) mounting in which the semiconductor element is directly connected to an electrode terminal on a glass substrate. A plastic flexible substrate may be used instead of a glass substrate (this is called COF (chip on flexib).
le), COP (chip on plastic). ), These COG mountings, etc. are used to reduce the size of the liquid crystal panel.
It is expected that it will become the mainstream in the field of liquid crystal display devices that are remarkably thinned. In COG mounting, anisotropic conductive films and conductive adhesives are used together, and mounting of a semiconductor element IC having gold bumps B of the above-described shape is common.

However, when the semiconductor element IC is mounted on a substrate for mounting a semiconductor, a paste or film of an anisotropic conductive film, a conductive adhesive or a sealing resin for sealing the semiconductor element and the substrate is used. Although mounting is performed with a material interposed, the problem that the paste-like material or the like does not spread smoothly in the outer peripheral direction (downstream direction) of the semiconductor element IC due to the shape of the bump B, that is, the problem that the flowability is impaired occurs. Have.

More specifically, as shown in FIG. 12, in the case of a semiconductor element IC having bumps B whose cross section is a rectangular column (rectangular parallelepiped), a paste-like or film-like material In some cases, the conductive particles of the anisotropic conductive film (ACF) may be unevenly distributed, or air may be pushed in to form bubbles K. This bubble K
When the cooling is performed in the state where the paste is formed, a crack is generated in the semiconductor element or the substrate due to a difference in thermal expansion coefficient between the paste-like material and the air, or particularly when an anisotropic conductive film (ACF) is used,
The conductive particles aggregate around the bubbles K, causing problems such as a short circuit in the horizontal direction. In the case where the bumps B are of a perfect circular pillar type (cylindrical type), as shown in FIG. 13, the spread of the paste-like material or the like is biased in a direction parallel to the bump rows and does not spread evenly over the mounting area. A situation (a situation that hinders liquidity) was occurring. These problems are remarkable especially when the pitch of the bumps B is narrow or when the bumps B are formed in a plurality of rows, and the problem becomes serious.

In COG mounting, in addition to the above problems,
Since the substrate for mounting the semiconductor is integrated with one substrate of the liquid crystal panel, if the paste-like material or the like does not spread smoothly in the outer peripheral direction, there is a possibility that a load stress is generated when the semiconductor element is thermocompression-bonded. However, this may directly affect the yield of the liquid crystal panel.

In today's demand for a finer bump pitch, a rectangular parallelepiped or cylindrical type has advantages such as excellent connection reliability and easy manufacturing in a manufacturing process. Had a limit.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor device mounted on a substrate for mounting a semiconductor device by ensuring a smooth and uniform spread of a flow of a paste material or the like that does not generate bubbles and at the same time reducing the fine pitch of bumps. An object of the present invention is to provide a semiconductor element capable of achieving the above and a liquid crystal display device on which the semiconductor element is mounted.

[0013]

According to a first aspect of the present invention, there is provided a semiconductor device having a bump mounted on a substrate for mounting a semiconductor via a paste-like or film-like material. The cross-section is an elliptical columnar shape, or the cross-section is a symmetrical columnar shape having a narrow streamline, and these narrow portions are arranged toward the outer peripheral direction of the semiconductor element. It is characterized by the following.

According to a second aspect of the present invention, there is provided a semiconductor device having a bump mounted on a semiconductor mounting substrate via a paste-like or film-like material, wherein the bump has an elongated diamond-shaped cross section. Pillar shape,
Alternatively, the cross section is line-symmetrical and is a columnar shape having narrow portions in a polygonal shape elongated in the direction of the line of symmetry, and these narrow portions are arranged toward the outer peripheral direction of the semiconductor element. It is characterized by the following.

According to the first or second aspect of the present invention, when the semiconductor element is mounted on the semiconductor mounting board via the paste material or the like, the paste material or the like is directed in the outer peripheral direction of the semiconductor element. Although it spreads evenly as it flows, the bumps having the above shape and direction become narrower toward the outer peripheral direction of the semiconductor element, so that the paste-like material and the like flow uniformly in the outer peripheral direction of the semiconductor element. It does not spread, and the conductive particles of the paste-like material and the anisotropic conductive film (ACF) are not biased, and bubbles are not generated due to impaired fluidity of the paste-like material and the like. In addition, since the narrowed portion is arranged toward the outer peripheral direction of the semiconductor element, it is compared with a conventional columnar shape having a rectangular cross section (a rectangular parallelepiped) or a columnar shape having a perfect circular shape (a cylindrical shape). Thus, the fine pitch of the bumps can be achieved. In addition, since the cross-sectional shapes of the bumps are all line-symmetric, they can be easily manufactured in a conventional bump manufacturing process using photolithography and plating.

According to a third aspect of the present invention, in the semiconductor device, the bumps are formed in a plurality of rows along the outer peripheral edge of the semiconductor element and are arranged in a staggered manner with the rows offset from each other. And

According to the present invention, even when a plurality of bumps are arranged in a staggered manner with their rows shifted from each other, the paste-like material or the like spreads uniformly so as to flow, and the demand for fine pitch bumps has been met. Will respond.

According to a fourth aspect of the present invention, in the liquid crystal display device having the semiconductor element mounted thereon, the paste-like or film-like material is an adhesive having conductivity, and the semiconductor mounting substrate is opposed to the substrate. The liquid crystal panel is a substrate integrated with one substrate of a liquid crystal panel in which liquid crystal is held between the substrates.

According to the present invention, the anisotropic conductive film (ACF), which is a paste-like or film-like material, spreads uniformly so as to flow smoothly in the outer peripheral direction of the semiconductor element.
It is possible to prevent the conductive particles of the anisotropic conductive film (ACF) from being unbalanced or from generating bubbles due to the obstruction of the fluidity of the anisotropic conductive film (ACF). Further, even in a semiconductor mounting substrate integrated with one substrate of the liquid crystal panel, there is no fear that a load stress is applied to the substrate when the semiconductor element is thermocompression-bonded.

[0020]

Embodiments of the present invention will be described below with reference to the drawings. In addition, the embodiment of the semiconductor device having a bump of the present invention, a bump manufacturing process,
The COG mounting of a semiconductor element having a bump, the mounting of a general semiconductor element IC, and the MCM mounting will be described in this order.

A plurality of bumps B1 are formed on the semiconductor element IC. The bump B1 is made of gold (Au). As shown in FIG. 1, the bump arrangement on one side is formed in a line along the outer peripheral edge of the semiconductor element IC, and the bump arrangement on the other side is The ICs are formed in a plurality of rows along the outer peripheral edge of the ICs, and are arranged in a staggered manner with the rows shifted from each other. Each bump B1 has a columnar shape with an elliptical cross section (first embodiment). That is, it has a columnar shape that becomes narrower left and right symmetrically toward the outer peripheral direction of the semiconductor element IC. As an example of such a bump B1, similar to the above-mentioned elliptical shape, a narrow streamline R whose cross section is line-symmetric is provided.
As shown in FIG. 2, a columnar bump B2 such as a water drop may be used as long as the bump B2 has 1 (second embodiment). Further, as in the application examples shown in FIGS. 5A and 5B, such bumps B1 and B2 may have a multilayer structure similar in shape. In any case, a narrow portion is arranged toward the outer peripheral direction of the semiconductor element IC in order to smoothly push a paste-like or film-like material such as an anisotropic conductive film (ACF) in the outer peripheral direction of the semiconductor element IC. Have been.

Further, as shown in FIG. 3, the shape of the bump B3 may be a columnar shape having an elongated rhombic cross section as shown in FIG.
Embodiment). Further, as in the case of the above-described elongated rhombic shape, a columnar shape having a section R2 whose cross section is line-symmetrical and narrow in the direction of the line of symmetry and having a narrow polygonal shape, as shown in FIG. , Or other elongated polygonal shapes (fourth embodiment). Further, FIG.
(B) As in the application examples shown in (c), such bumps B3 and B4 may have a multilayer structure having similar shapes.

(Bump Forming Process) Next, the forming process of the bumps B1, B2, B3, and B4 in each of the above embodiments will be described. Generally, as a method of forming bumps on a semiconductor wafer, a method using photolithography and plating, or a method of printing and forming creamy solder on bumps formed by photolithography and plating, a so-called transfer bump method And many other methods are known. Here, an example in which a gold (Au) bump is manufactured by a method using photolithography and a plating method will be described.

First, a barrier metal (Ti, P) is formed on the surface of the semiconductor wafer 11 having the Si ₃ N ₆ protective film (FIG. 6A).
d, Cr, and Cu) are vapor-deposited on the entire surface (FIG. 6B), and then a film resist photo step is performed on the opening 8 formed in a later step (FIG. 6C). The opening 8 of the film resist is formed such that the bump B1 has an elliptical pillar shape. The opening 8 is formed according to the shape of the bumps B1, B2, B3, and B4 in each of the embodiments. The bumps B1, B2, B
Since the shapes of 3 and B4 are symmetrical in both directions, they can be easily manufactured in a bump manufacturing process by photolithography and plating.

Thereafter, the opening 8 of the film resist is washed with an acid or the like, and gold (Au) plating is formed in the opening 8 as shown in FIG. After gold (Au) plating is formed in the opening 8, the film resist is removed, and barrier metal (Ti, Pd, Cr, Cu) is removed.
) Is formed by etching to form an elliptical columnar bump B1 (FIG. 6E).

As described above, the method for forming the bumps of the semiconductor element in the present embodiment can be formed by a conventional general forming method such as a method using photolithography and plating. Only the shape of.

(COG mounting) COG mounting of the semiconductor element IC in each of the above embodiments will be described. First,
As shown in FIGS. 7 and 8, the liquid crystal display device includes a semiconductor element DrIC in a mounting area 25 at a peripheral portion of a liquid crystal panel LCD.
Has been implemented. The liquid crystal panel LCD is a reflection type LCD using a TFT which is a typical active element currently used. The semiconductor element IC that drives the liquid crystal panel includes a driver IC (Driver IC, Driver LS).
I) Called DrIC.

The first substrate (one substrate: AM substrate) 1 of the liquid crystal panel LCD is larger than the other substrate 13. Mounting area 2 of overhanging semiconductor element DrIC
5 are formed. The mounting area 25 of the first substrate 1
Is formed with a wiring pattern 20 for semiconductor mounting. The AM substrate 1 may be a flexible substrate made of a synthetic resin other than a glass substrate.

As shown in FIG. 9, the semiconductor device of this embodiment is mounted on a mounting region 25 of the semiconductor device DrIC via an adhesive 26 having conductivity. On the back side of the semiconductor element DrIC, the first and second
A large number of bumps B1 and B2 of the present embodiment are formed facing each other. The bumps B2, which are the protruding electrodes of the semiconductor element DrIC, are made of gold (Au), and the bumps are arranged in the first to fourth embodiments (shown in FIGS. 1 to 5). Is the same as

Electrodes 21 and 22 connected to the semiconductor element DrIC are formed around the wiring pattern 20 (both sides in the figure). The electrode 21 (left in the figure) is an input electrode, and the electrode 22 (left in the figure) is an output electrode. Then, a semiconductor element DrIC for driving the liquid crystal panel LCD is mounted via an adhesive 26 having conductivity.

The conductive adhesive 26 is an anisotropic conductive film (ACF) 26, but may be a conductive adhesive (conductive paste).
Anisotropic Conductive Film (ACF) 2
Reference numeral 6 denotes a conductive particle 26a in which conductive particles 26a are dispersed in an adhesive having an insulating property and have conductivity in a thickness direction (connection direction) and have an insulating property in a plane direction (lateral direction).
And an adhesive. The connection is basically thermocompression bonding, in which the conductive particles 26a are in charge of the function of electrical connection, and the adhesive is in charge of the function of maintaining the pressed state.

The anisotropic conductive film 26 coats the surface of the conductive particles 26a with an insulating thin-film resin. The insulating thin-film resin has a role as a protective sheet for the anisotropic conductive film 26. In the connection direction, the electrode is broken by the crimping force and the lower metal thin film and the electrode are brought into contact with each other to conduct electricity. That is, the anisotropic conductive film 26 is supplied in a configuration such as a double-sided tape before the liquid crystal panel is attached, and after the adhesive layer side is attached to the liquid crystal panel, the separator is peeled off to expose the adhesive layer, Thereafter, the semiconductor element DrIC is mounted (heat-pressed), and the semiconductor element DrIC is mounted.
The adhesive in the part is cured to obtain the original adhesive strength. Teflon (registered trademark) or PET (poly
-ethylene terephtalate resin) is used. As the adhesive, a highly reliable thermosetting resin is used in addition to the thermoplastic resin. Some of the conductive particles 26a are obtained by plating a metal thin film on the surface of a polymer sphere.

The wiring pattern 20 is a semiconductor element DrIC
A group of wiring (bus wiring) for supplying a signal or power supply to the (drive driver). In the AM substrate 1 (AM-LCD), a pattern can be formed simultaneously in the element process. The wiring pattern 20 of the present embodiment is formed by forming a film made of an aluminum material to a thickness of 0.1 to 0.2 μm by sputtering and then patterning by photolithography. On the input electrode 21 and the output electrode 22, since the anisotropic conductive film 26 has a thickness of about 0.2 μm and the area ratio of the conductive particles 26a is large, it does not function as an adhesive. Functioning as In addition,
The pad portion at the end of the wiring pattern 20 may have the same shape as the shape of the bumps B1, B2, B3, B4 in the present embodiment.

Therefore, when the semiconductor element DrIC is mounted on the AM substrate 1 which is a substrate for mounting a semiconductor, as shown in FIG. 9A, the mounting area 25 of the first substrate (AM substrate) 1 is formed. The anisotropic conductive film 26 is supplied over the entire area.

Next, after supplying the anisotropic conductive film 26,
Align with the mounting machine and set the gold bump B1 (B2, B3, B
4) is mounted by thermocompression bonding (FIG. 9B). In this case, conventionally, the conductive particles 26a of the anisotropic conductive film (ACF) 26 are distributed around the bumps B1 (including B2, B3, and B4) unevenly, or the air is pushed into the air bubbles K1. In some cases (see FIG. 12). However, in the present embodiment, since the gold bump B1 formed on the semiconductor element IC has an elliptical columnar shape or the like, the anisotropic conductive film (AC
F) The 26 spreads so as to flow smoothly in the outer peripheral direction of the semiconductor element IC (see arrows in FIGS. 1 and 2), and the fluidity of the anisotropic conductive film (ACF) 26 is hindered as in the related art. Does not cause the generation of bubbles K. Therefore, there is no risk that the conductive particles of the biased anisotropic conductive film (ACF) are short-circuited in the horizontal direction, or that the semiconductor element or the substrate is cracked due to a difference in the thermal expansion coefficient between the paste material and air. . In the case of the column-shaped bump B2 having a narrow streamline R1 whose cross section is symmetrical in the second embodiment, a smoother flow is ensured along the narrow streamline R1. . In addition, the COG mounting has a mounting area 2 due to the tendency of the liquid crystal panel to be smaller and thinner.
5 is particularly limited, but the bump B
1 and B2 (including B3 and B4) can achieve a finer pitch than the conventional rectangular parallelepiped or regular circular bump B.

In COG mounting, a semiconductor mounting substrate is integrated with one substrate of a liquid crystal panel.
Since the semiconductor device DrIC is thermocompression-bonded because the M substrate 1 is used, if the paste-like material 26 or the like does not spread smoothly in the outer peripheral direction, there is a possibility that a load stress occurs when the semiconductor device DrIC is thermocompression-bonded. However, this may directly affect the yield of the liquid crystal panel. However, the semiconductor element DrIC having the bumps B1 and B2 (including B3 and B4) according to the present embodiment allows the anisotropic conductive film (ACF) 2
6 smoothly flows in the outer peripheral direction of the semiconductor element DrIC, thereby reducing the load stress and performing mounting without affecting the yield of the liquid crystal panel.

(Mounting of General Semiconductor Device IC) The mounting structure of the semiconductor device DrIC has been described by taking COG mounting as an example. However, TAB (tape automated bonding) which is a mounting method of a semiconductor device using a conductive adhesive is used. ) Law,
The present invention is also applicable to a method for mounting a semiconductor element on a general circuit board. Circuit Board As a general circuit board, a flexible board made of synthetic resin may be used in addition to a glass board.

However, in the case of mounting a general semiconductor element IC, in addition to the anisotropic conductive film (ACF) 26 and a conductive adhesive (conductive paste), the bonding strength between the semiconductor element IC and the substrate 31 is ensured. Therefore, a sealing resin may be enclosed. Hereinafter, the bumps B3 and B4 of the third and fourth embodiments will be used to form the bumps B1 of the semiconductor element IC.
A material such as an anisotropic conductive film (ACF) or a conductive adhesive (conductive paste) is supplied only on the top, and the material is mounted by heating / pressing means. A method of pouring the sealing resin 37 for securing these joints and curing the resin will be described.

FIG. 10 is a mounting process diagram of the semiconductor device IC with bumps, and shows a method of mounting the semiconductor device IC on which the bumps B3 and B4 are formed on the substrate 31 for mounting semiconductors. Reference numeral 34 indicates a wiring pattern on the semiconductor mounting substrate 3.

The semiconductor element IC is mounted on a substrate 31 for mounting a semiconductor.
As shown in FIG. 10A, anisotropic conductive film (ACF), conductive adhesive (conductive paste), or the like is provided only on the bumps B3 and B4 of the semiconductor element IC when mounting on the semiconductor device IC. The paste-like or film-like material 36 is transferred, aligned by a mounting machine, and the semiconductor element IC on which the gold bumps B3 are formed is mounted by thermocompression bonding (FIG. 10B). Next, the semiconductor element IC and the substrate 31
Sealing resin 37 for securing these joints between
And allow it to cure.

When the sealing resin 37 is poured, the gold bumps B3 and B4 formed on the semiconductor element IC are columnar in the shape of an elongated rhombus in cross section. The fluidity of the sealing resin 37 is not hindered. Therefore, unlike the related art, the generation of bubbles K due to the obstruction of the flowability of the paste-like material does not occur. In the case of the bump B4 in the fourth embodiment having a narrow section R2 having a narrow and long polygonal shape with a symmetrical cross section, a smoother flow is ensured than in the third embodiment. Is done.

(MCM mounting) Next, a plurality of semiconductor elements I
A description will be given of an implementation used for a multi-chip module (hereinafter, referred to as MCM) in which C is modularized and implemented.

As shown in FIGS. 11A and 11B, a plurality of semiconductor element ICs are mounted on a module substrate 41, respectively. In this case, the MCM is completed via the conductive adhesive 26 such as an anisotropic conductive film (ACF). Here, the gold bump B1 and the wiring pattern 45 are joined via an adhesive 26 having conductivity. That is, also in the MCM mounting of the present embodiment, the bubbles K are not generated by the paste-like material or the like flowing smoothly in the outer peripheral direction of the semiconductor element IC.
Thereafter, the MCM is bonded to the motherboard 43 together with the other electronic elements 42. In this case, the bump is formed by solder to form a so-called solder bump 44, and the solder bump 44 is melted and solidified by reflow and connected to an electrode of the substrate (corresponding to the first conventional method). When bonding to the mother substrate 43, the bonding may be performed using an adhesive 26 having conductivity.

[0044]

In the semiconductor device according to the present invention, since the bumps have a shape and directionality in which the width becomes narrower toward the outer peripheral direction of the semiconductor device, the paste material or the like flows smoothly in the outer peripheral direction of the semiconductor device. Will spread evenly. Therefore, it is possible to prevent a situation such as generation of bubbles from occurring, and to make the bumps finer in pitch.

In the liquid crystal display device on which the semiconductor element according to the present invention is mounted, since the bump has a shape that becomes narrower in the outer peripheral direction of the semiconductor element, the paste-like material or the like is smooth in the outer peripheral direction of the semiconductor element. It will spread evenly as it flows. Therefore, in COG mounting,
Without causing the situation that generates bubbles,
Moreover, the load applied to one substrate of the liquid crystal panel can be reduced, and a liquid crystal display device on which a semiconductor element having high bonding reliability is mounted can be provided. In addition, it is possible to achieve a fine pitch of the bumps in the COG mounting that requires a reduction in size and thickness.

[0046]

[Brief description of the drawings]

FIG. 1 is a view showing a semiconductor device according to a first embodiment of the present invention, (a) is a plan view thereof, and (b) is a perspective view showing a bump thereof.

FIGS. 2A and 2B are views showing a semiconductor device according to a second embodiment of the present invention, FIG. 2A is a plan view thereof, and FIG.

FIGS. 3A and 3B are views showing a semiconductor device according to a third embodiment of the present invention, FIG. 3A is a plan view thereof, and FIG.

FIG. 4 is a view showing a semiconductor device according to a fourth embodiment of the present invention, (a) is a plan view thereof, and (b) is a perspective view showing a bump thereof.

FIG. 5 is a perspective view showing a bump of an application example of each of the above embodiments.

FIG. 6 is a diagram illustrating a bump forming process according to each of the embodiments.

FIG. 7 is a perspective view showing a mounting structure of a semiconductor element of the liquid crystal display device of the present invention.

FIG. 8 is a sectional view showing the liquid crystal display device according to the embodiment.

FIG. 9 is a sectional view showing a COG mounting process.

FIG. 10 is a sectional view showing a mounting process of a general semiconductor element.

11A and 11B are diagrams showing an example of MCM mounting, FIG. 11A is a plan view thereof, and FIG. 11B is a sectional view thereof.

FIG. 12 is a diagram showing an example of a conventional semiconductor device.

FIG. 13 is a diagram showing an example of a conventional semiconductor device.

[Explanation of symbols]

1, 31, 41, 43 Substrate for mounting semiconductor, 8 Opening of film resist, 11 Semiconductor wafer, 20, 34 Wiring pattern, 25 Mounting area, 26, 36 Adhesive (paste material) having conductivity, 26a Conductive particles, 37 Resin for sealing, B, B1, B2, B3, B4 Bump, IC, DrIC semiconductor element, R1 narrow streamline, R2 narrow polygonal part

Claims (4)

[Claims] 1. A semiconductor device having a bump mounted on a semiconductor mounting substrate via a paste-like or film-like material, wherein the bump has a columnar shape with an elliptical cross section, or a cross section with a right and left cross section. A semiconductor device having a columnar shape having a symmetrical narrow streamline, wherein these narrow portions are arranged toward an outer peripheral direction of the semiconductor device. 2. A semiconductor device having a bump mounted on a substrate for mounting a semiconductor via a paste-like or film-like material, wherein the bump has an elongated diamond-shaped column shape or a cross-sectional shape thereof. It is a columnar shape having line-symmetric and narrow portions in a polygonal shape elongated in the direction of the line of symmetry, and these narrow portions are arranged toward the outer peripheral direction of the semiconductor element. Semiconductor element. 3. The bump according to claim 1, wherein the plurality of bumps are formed in a plurality of rows along an outer peripheral edge of the semiconductor element, and are arranged in a staggered manner with the rows shifted from each other. Semiconductor element. 4. The paste-like or film-like material is a conductive adhesive, and the semiconductor mounting substrate is integrated with one substrate of a liquid crystal panel in which liquid crystal is sandwiched between opposing substrates. 4. A liquid crystal display device on which the semiconductor element according to claim 1 is mounted.