JP2001352129A - Semiconductor laser device and method of manufacturing the same - Google Patents

Abstract

(57) [Problem] To provide a semiconductor laser device capable of emitting a plurality of laser beams having different wavelengths from one light emitting spot. SOLUTION: An AlGaInP-based first semiconductor multilayer structure 110 having an active layer 112 in which an AlGaInP layer and a GaInP layer are stacked is provided in a front region on an n-type GaAs substrate 100. In addition, an AlGaAs-based second semiconductor laminated structure 120 having an active layer 122 in which an AlGaAs layer and a GaAs layer are laminated is provided in a rear region on the n-type GaAs substrate 100. The stripe region 112a of the active layer 112 of the first
Are arranged on the same straight line as the stripe region 122a of the active layer 122 of the semiconductor laminated structure 120.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor laser device capable of emitting a plurality of laser beams having different wavelengths, and a method of manufacturing the same.

[0002]

2. Description of the Related Art In recent years, there has been an increasing demand for semiconductor laser devices in many industrial fields, and there has been an increasing demand for semiconductor laser devices having a III-V group compound semiconductor layer, particularly a compound semiconductor layer containing GaAs or InP. Research and development are ongoing.

In the field of optical information processing, AlGaAs
A method of recording or reproducing information using a semiconductor laser device having a layer and oscillating an infrared laser beam having a wavelength in the 780 nm band has been put into practical use. Such a semiconductor laser device is a compact disk (CD) or the like. It has become widespread in the field.

In a recording device such as a magneto-optical disk having a larger capacity than a CD, a semiconductor laser device having an AlGaInP layer and oscillating a laser beam in a 680 nm band shorter in wavelength than a 780 nm band is used. I have.

Further, in order to realize a digital video disk (DVD) capable of reproducing a high-definition image for a long time, a semiconductor laser device for emitting a red laser beam having a wavelength in the 650 nm band has been required. . By shortening the oscillation wavelength, the recording density of the optical disk is improved.

By the way, D for reproducing DVD information is
The VD device has compatibility for reproducing both DVD and CD discs so that not only DVD information but also conventional CD information can be utilized. Therefore, as a light source of the pickup head of the DVD device, a first semiconductor laser element having an AlGaAs layer and emitting an infrared laser beam in the 780 nm band, and an AlGaInP layer and emitting a red laser beam in the 650 nm band. It is necessary to mount two semiconductor laser devices including the second semiconductor laser device.

In this case, if an optical processing section is provided for each semiconductor laser element, the laser light of 780 nm band and 650 nm
Since an optical system for multiplexing with the m-band laser light is required, there is a problem that the structure of the pickup head device is complicated and there is a limit to the miniaturization of the pickup head device.

Therefore, a hybrid semiconductor laser device in which two semiconductor laser elements are arranged close to each other, or a monolithic semiconductor laser device in which two semiconductor laminated structures are provided in parallel on one substrate ( Japanese Patent Laid-Open Publication No. Hei 11-186651 and the 60th Fall Meeting of the Japan Society of Applied Physics, Proceedings 3a-ZC-10) have been proposed.

FIG. 21 shows an example of a conventional monolithic semiconductor laser device. This semiconductor laser device has a first semiconductor laminated structure 2 having an AlGaInP layer on one semiconductor substrate 1 and an AlGaAs. And a second semiconductor laminated structure 3 having a layer, which emits 650 nm band laser light from the light emitting spot 4 of the first semiconductor laminated structure 2 and 780 nm band from the light emitting spot 5 of the second semiconductor laminated structure 3. Is emitted.

When the above-mentioned hybrid or monolithic semiconductor laser device is used, an optical system for combining two laser beams having different wavelength bands is not required, so that the pickup head device can be simplified and downsized. Can be.

[0011]

However, in the hybrid type semiconductor laser device, the pitch between the two semiconductor laser elements is affected by the width of each semiconductor laser element, so that the pitch between the light emitting spots is several hundred μm. That is all.

Also, in a monolithic semiconductor laser device, it is necessary to form two semiconductor laminated structures on one semiconductor substrate, and the pitch of light emitting spots is limited by the limit of the process of separating the two semiconductor laminated structures. It becomes several tens nm or more.

The optical pickup head device has a half mirror for changing the emission direction of the laser light toward the optical disk, an objective lens for condensing the laser light passing through the half mirror to a spot on the optical disk, and has been reflected from the optical disk. A photodetector or the like that detects laser light is required.

However, since the objective lens has been miniaturized with the miniaturization of the optical pickup head device, the difference in the incident point of the laser beam in the objective lens (the position of the incident point in the objective lens due to the different light emission spot). Are different from each other). For this reason, there is a problem that it is difficult to focus the laser beam that has passed through the objective lens on a minute spot on the optical disk.

Further, if the angles of incidence of the laser light passing through the objective lens on the optical disk are different from each other, the direction of the laser light reflected from the optical disk is also different, so that there is a problem that two photodetectors are required.

In view of the above, the present invention provides a method of emitting a plurality of laser beams having different wavelengths from an optical disk by causing a plurality of laser beams having different wavelengths to be emitted from one light emitting spot or two light emitting spots extremely close to each other. An object of the present invention is to make it possible to surely condense light onto a very small spot and to detect a plurality of laser lights having different wavelengths with one photodetector.

[0017]

To achieve the above object, a semiconductor laser device according to the present invention is provided in a front region on a substrate and emits a first laser beam having a first wavelength band. A first semiconductor laminated structure having a first active layer for oscillating, and a second active layer provided in a rear region on the substrate and oscillating a second laser beam having a second wavelength band A second semiconductor laminated structure, wherein the emission direction of the first laser light and the emission direction of the second laser light are the same.

According to the semiconductor laser device of the present invention,
A first semiconductor laminated structure for oscillating the first laser light is provided in a front region on the substrate, and a second semiconductor laminated structure for oscillating the second laser light is provided in a rear region on the substrate. In addition, since the emission direction of the first laser light and the emission direction of the second laser light are the same, the first and second laser lights having different wavelengths are provided in the front region. At the front end face of the first semiconductor laminated structure
The light can be emitted from one light emitting spot or two light emitting spots in close proximity. For this reason, a plurality of laser beams having different wavelengths can be surely focused on a minute spot on the optical disk and can be detected by one photodetector.

In the semiconductor laser device according to the present invention,
It is preferable that the emission direction of the first laser light and the emission direction of the second laser light are on the same straight line.

With this configuration, the first and second laser beams having different wavelengths can be emitted from one light emitting spot on the front end face of the first semiconductor laminated structure.

In the semiconductor laser device according to the present invention,
The emission direction of the second laser light is preferably located above or below the emission direction of the first laser light.

With this arrangement, the first and second laser beams having different wavelengths can be emitted from two light emitting spots which are extremely close to each other on the front end face of the first semiconductor laminated structure. That is, the pitch between the light emitting spot of the first laser light and the light emitting spot of the second laser light is not affected by the width dimension of the semiconductor integrated structure, so that the pitch of the light emitting spot can be 1 μm or less. .

Further, since the rear end surface of the first active layer can be a transmission surface or an absorption surface, options of optical design conditions are increased. That is, when the energy gap of the first active layer is larger than the energy gap of the second active layer, and the optical axis of the first laser light coincides with the optical axis of the second laser light, The front end face of the second active layer, that is, the rear end face of the first active layer becomes an absorption face of the first laser light. Usually, since the energy gap of the semiconductor layer above or below the second active layer is larger than the energy gap of the second active layer, the optical axis of the second laser beam is set to the first axis.
Is located above or below the optical axis of the laser light, the front end face of the semiconductor layer above or below the second active layer, that is, the rear end face of the first active layer, is the transmission face or absorption of the first laser light. Surface.

If the emission direction of the second laser light is located above or below the emission direction of the first laser light, the second
In the semiconductor laminated structure of the above, the energy gap of the semiconductor layer facing the rear end face of the first active layer is preferably larger than the energy gap of the first active layer.

With this configuration, the semiconductor layer facing the rear end face of the first active layer in the second semiconductor laminated structure transmits the first laser light, so that the loss of the first laser light is reduced. .

In the case where the emission direction of the second laser light is located above or below the emission direction of the first laser light, the first semiconductor laminated structure includes a substrate, a first active layer, A first cladding layer located between the first active layer and a second cladding layer located above the first active layer, wherein the second semiconductor multilayer structure is provided between the substrate and the second active layer. And a fourth cladding layer located above the second active layer, wherein the composition of the first cladding layer and the composition of the third cladding layer are the same. Alternatively, the composition of the second cladding layer and the composition of the fourth cladding layer are preferably the same.

In the semiconductor laser device according to the present invention,
The energy gap of the first active layer is preferably larger than the energy gap of the second active layer.

With this configuration, the second laser light is not absorbed when propagating inside the first semiconductor multilayer structure, and thus is reliably emitted from the front end face of the first semiconductor multilayer structure.

In particular, when the optical axis of the first laser light coincides with the optical axis of the second laser light, the second active layer is the first laser oscillated by the first active layer. The first laser beam oscillates using the front end face of the first semiconductor laminated structure and the front end face of the second semiconductor laminated structure as resonators, and oscillates in the second active layer. Since the second laser light is transparent to the first active layer, it oscillates using the front end face of the first semiconductor laminated structure and the rear end face of the second semiconductor laminated structure as resonators. Therefore, two laser beams having different wavelength bands can be reliably emitted from one light emitting spot.

In the semiconductor laser device according to the present invention,
Preferably, the first active layer contains indium and phosphorus, and the second active layer contains gallium and arsenic.

In this case, the oscillation wavelength of the first laser beam becomes about 650 nm, so that the first laser beam becomes red laser beam and the oscillation wavelength of the second laser beam becomes 7 nm.
Since the second laser beam becomes an infrared laser beam because it is about 80 nm, a semiconductor laser device most suitable for a pickup head device of a DVD device can be obtained.

In the semiconductor laser device according to the present invention,
It is preferable that a non-reflective coating layer is provided on a front end face of the first semiconductor laminated structure, and a high reflection coating layer is provided on a rear end face of the second semiconductor laminated structure.

With this arrangement, two laser beams having different wavelength bands can be reliably emitted from the front end face of the first semiconductor laminated structure.

The semiconductor laser device according to the present invention further includes a dielectric member between a rear end face of the first semiconductor laminated structure and a front end face of the second semiconductor laminated structure, wherein the dielectric member is formed of the first semiconductor laminated structure. It is preferable to have a refractive index between the effective refractive index of the stripe region of the active layer and the effective refractive index of the stripe region of the second active layer.

In this way, the dielectric member allows
The insulation between the first semiconductor laminated structure and the second semiconductor laminated structure is ensured. In addition, the efficiency of coupling light between the first laser light and the second semiconductor laminated structure is improved, and the efficiency of light coupling between the second laser light and the first semiconductor laminated structure is improved. Has improved optical characteristics.

According to the first method of manufacturing a semiconductor laser device of the present invention, a first active layer provided in a front region on a substrate and oscillating a first laser beam having a first wavelength band is provided. And a second semiconductor laminated structure having a second active layer provided in a rear region on the substrate and oscillating a second laser beam having a second wavelength band. Growing a first temporary semiconductor multilayer structure having the same multilayer structure as the second semiconductor multilayer structure over the entire surface of the substrate, the method including a method of manufacturing a semiconductor laser device provided with the first temporary semiconductor; Forming a second semiconductor multilayer structure in a rear region on the substrate by removing a front portion of the multilayer structure; and forming a second semiconductor multilayer structure on the front region and the second semiconductor multilayer structure on the substrate. The same lamination as the first semiconductor lamination structure over the entire surface Growing a second provisional semiconductor laminated structure having a structure, and removing a portion of the second provisional semiconductor laminated structure above the second semiconductor laminated structure, thereby forming a second region on the front side of the substrate. Forming one semiconductor multilayer structure.

According to the first method for manufacturing a semiconductor laser device of the present invention, the first semiconductor laminated structure for oscillating the first laser light is provided in the front region on the substrate and is provided on the rear region on the substrate. The second laser that oscillates the second laser light in the region
And a monolithic semiconductor laser device in which the emission direction of the first laser light and the emission direction of the second laser light are in the same direction can be reliably manufactured.

According to a second method of manufacturing a semiconductor laser device of the present invention, a first active layer provided in a front region on a substrate and oscillating a first laser beam having a first wavelength band is provided. And a second semiconductor laminated structure having a second active layer provided in a rear region on the substrate and oscillating a second laser beam having a second wavelength band. Growing a first provisional semiconductor laminated structure having the same laminated structure as the first semiconductor laminated structure over the entire surface of a substrate, the method including a first provisional semiconductor; Forming a first semiconductor stacked structure in a front region on the substrate by removing a rear portion of the stacked structure; and forming a first semiconductor stacked structure on the rear region and the first semiconductor stacked structure on the substrate. The same lamination as the second semiconductor lamination structure over the entire surface Growing a second provisional semiconductor laminated structure having a structure, and removing a portion of the second provisional semiconductor laminated structure above the first semiconductor laminated structure, thereby forming a second region in the rear side region on the substrate. Forming a second semiconductor laminated structure.

According to the second method for manufacturing a semiconductor laser device of the present invention, the first semiconductor laminated structure for oscillating the first laser beam is provided in the front region on the substrate and is provided on the rear region on the substrate. The second laser that oscillates the second laser light in the region
And a monolithic semiconductor laser device in which the emission direction of the first laser light and the emission direction of the second laser light are in the same direction can be reliably manufactured.

According to a third method for manufacturing a semiconductor laser device of the present invention, a first laser chip having a first active layer for oscillating a first laser beam having a first wavelength band;
A first step of forming a second laser chip having a second active layer that oscillates a second laser beam having a wavelength band of And a second step of fixing the second laser chip in a rear region on the substrate, wherein the second step includes an emission direction of the first laser light and an emission direction of the second laser light. Fixing the first laser chip and the second laser chip so that the directions are the same.

According to the third method of manufacturing a semiconductor laser device of the present invention, the first laser chip for oscillating the first laser beam is provided in the front region on the substrate and the rear laser chip on the substrate is provided. A hybrid semiconductor laser in which a second laser chip that oscillates a second laser light is provided in a region, and an emission direction of the first laser light and an emission direction of the second laser light are the same. The device can be manufactured reliably.

In the first to third methods for manufacturing a semiconductor laser device, it is preferable that the emission direction of the first laser light and the emission direction of the second laser light are on the same straight line.

With this configuration, the first and second laser beams having different wavelengths can be emitted from one light emitting spot on the front end face of the first semiconductor laminated structure or the first laser chip.

In the first to third methods for manufacturing a semiconductor laser device, the emission direction of the second laser light is preferably located above or below the emission direction of the first laser light.

With this arrangement, the first and second laser beams having different wavelengths can be emitted from two light emitting spots which are extremely close to each other on the front end face of the first semiconductor laminated structure. That is, since the pitch between the light emitting spot of the first laser light and the light emitting spot of the second laser light is not affected by the width dimension of the semiconductor integrated structure or the laser chip, the pitch of the light emitting spot is 1 μm or less. be able to.

In the first to third methods of manufacturing a semiconductor laser device, the energy gap of the first active layer is set to
Is preferably larger than the energy gap of the active layer.

In this case, the second laser light is emitted from the first laser beam.
The second laser light is reliably emitted from the front end face of the first semiconductor multilayer structure or the first laser chip because it is not absorbed when the light propagates inside the semiconductor multilayer structure or the first laser chip.

In particular, when the optical axis of the first laser beam coincides with the optical axis of the second laser beam, the second active layer oscillates in the first laser layer. The first laser beam oscillates using the front end face of the first semiconductor laminated structure or the first laser chip and the front end face of the second semiconductor laminated structure or the second laser chip as resonators Further, the second laser light oscillated by the second active layer is transparent to the first active layer, so that the front end face of the first semiconductor laminated structure or the first laser chip and the second laser light The semiconductor lamination structure or the rear end face of the second laser chip oscillates as a resonator. Therefore, two laser beams having different wavelength bands can be reliably emitted from one light emitting spot.

In the first to third methods for manufacturing a semiconductor laser device, the first active layer contains indium and phosphorus,
Preferably, the second active layer contains gallium and arsenic.

In this case, the oscillation wavelength of the first laser beam becomes about 650 nm, so that the first laser beam becomes red laser beam and the oscillation wavelength of the second laser beam becomes 7 nm.
Since the second laser beam becomes an infrared laser beam because it is about 80 nm, a semiconductor laser device most suitable for a pickup head device of a DVD device can be obtained.

The first to third methods of manufacturing a semiconductor laser device include a step of forming an anti-reflection coating layer on the front end face of the first semiconductor laminated structure, and a step of forming a highly reflective coating on the rear end face of the second semiconductor laminated structure. And a step of forming a layer.

In this manner, two laser beams having different wavelength bands can be reliably emitted from the first semiconductor laminated structure or the front end face of the first laser chip.

In the third method of manufacturing a semiconductor laser device, the first active layer is formed between the rear end face of the first laser chip and the front end face of the second laser chip after the second step. It is preferable that the method further includes a step of filling a dielectric member having a refractive index between the effective refractive index of the stripe region and the effective refractive index of the stripe region of the second active layer.

In this case, the dielectric member allows
The insulation between the first laser chip and the second laser chip is ensured. Further, since the coupling efficiency between the first laser light and the second laser chip is improved and the coupling efficiency between the second laser light and the first laser chip is improved,
The optical characteristics of the semiconductor laser device are improved.

According to a fourth method of manufacturing a semiconductor laser device of the present invention, a first laser chip having a first active layer for oscillating a first laser beam having a first wavelength band;
A second laser chip having a second active layer for oscillating a second laser beam having a third wavelength band, and a second laser chip having a third active layer for oscillating a third laser beam having a third wavelength band. 3
A first step of forming a first laser chip and a first laser chip in a region on the front side of the substrate, and a second laser chip in a central region of the substrate. A second laser chip for fixing the third laser chip to the rear area
And the second step is such that the emission direction of the first laser light, the emission direction of the second laser light, and the emission direction of the third laser light are in the same direction. Laser chip,
Fixing the second laser chip and the third laser chip.

According to the fourth method for manufacturing a semiconductor laser device of the present invention, the first laser chip for oscillating the first laser light is provided in the front region on the substrate, and the central region on the substrate is provided. A second laser chip for oscillating the second laser light is provided, and a third laser chip for oscillating the third laser light is provided in a rear region on the substrate; It is possible to reliably manufacture a hybrid semiconductor laser device in which the light emission direction, the second laser light emission direction, and the third laser light emission direction are the same.

In the fourth method for manufacturing a semiconductor laser device, the emission direction of the third laser light is preferably on the same straight line as the emission direction of the first laser light or the emission direction of the second laser light. .

Thus, the third laser light and the first or second laser light having different wavelengths can be emitted from one light emitting spot on the front end face of the first laser chip.

In the fourth method for manufacturing a semiconductor laser device, the energy gap of the first active layer is larger than the energy gap of the second active layer, and the energy gap of the second active layer is larger than that of the third active layer. It is preferably larger than the energy gap.

In this case, the second laser beam is emitted from the first laser beam.
Is not absorbed when propagating inside the laser chip, and the third laser light is not absorbed when propagating inside the first and second laser chips. From the front end face of the laser chip.

In the fourth method of manufacturing a semiconductor laser device, the first active layer contains gallium and nitrogen, the second active layer contains indium and phosphorus, and the third active layer contains gallium and arsenic. Is preferred.

In this case, the first laser beam becomes a blue laser beam, the second laser beam becomes a red laser beam, and the third laser beam becomes an infrared laser beam. Since laser light can be emitted from one light-emitting spot or two light-emitting spots that are extremely close to each other, a three-wavelength semiconductor laser device that can support three types of optical discs having different standards can be realized.

In the fourth method of manufacturing a semiconductor laser device, after the second step, the first active layer is formed between the rear end face of the first laser chip and the front end face of the second laser chip. Filling a first dielectric member having a refractive index between the effective refractive index of the stripe region and the effective refractive index of the stripe region of the second active layer; A second dielectric layer having a refractive index between the effective refractive index of the stripe region of the second active layer and the effective refractive index of the stripe region of the third active layer between the front end face of the third laser chip and the third laser chip; And a step of filling the body member.

In this manner, the insulation between the first laser chip and the second laser chip and the insulation between the second laser chip and the third laser chip are ensured. Also,
Since the coupling efficiency between each laser beam and each laser chip is improved, the optical characteristics of the semiconductor laser device are improved.

[0065]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) A semiconductor laser device and a method for manufacturing the same according to a first embodiment of the present invention will be described below with reference to FIGS.
FIG. 1 is a perspective view of the semiconductor laser device according to the first embodiment, and FIG. 2 is a cross-sectional view taken along line II-II in FIG.

As shown in FIGS. 1 and 2, n-type GaAs
A first semiconductor multilayer structure 110 having an AlGaInP layer and having an oscillation wavelength in the 650 nm band is formed in a front region on the substrate 100, and the n-type GaAs substrate 10
In the region on the rear side above the AlGaAs layer 780n
A second semiconductor multilayer structure 120 having an m-band oscillation wavelength is formed.

The first semiconductor laminated structure 110 has an n-type Ga
An n-type clad layer 1 composed of an n-type AlGaInP layer formed sequentially from the lower side in a front region on the As substrate 100
11, an active layer 112 in which an AlGaInP layer (barrier layer) and a GaInP layer (well layer) are stacked, p-type AlGa
P-type first cladding layer 113 made of InP layer, n-type A
a pair of current blocking layers 114 made of an lInP layer, and a p-type second cladding layer 115 made of a p-type AlGaInP layer
And a contact layer 116 made of a p-type GaAs layer. A first p-type electrode 117 made of, for example, a Cr / Pt / Au laminated film and in ohmic contact with the contact layer 116 is formed on the upper surface of the first semiconductor laminated structure 110.
Are formed. The composition of the mixed crystal of the active layer 112 is selected so that the oscillation wavelength of the laser beam is in the 650 nm band.

The second semiconductor laminated structure 120 has n-type Ga
An n-type cladding layer 12 composed of an n-type AlGaAs layer, which is sequentially formed from the lower side in a rear region on the As substrate 100.
1. AlGaAs layer (barrier layer) and GaAs layer (well layer)
, A p-type first cladding layer 123 made of a p-type AlGaAs layer, an n-type AlGa
A pair of current blocking layers 124 made of an As layer, p-type Al
It comprises a p-type second cladding layer 125 made of a GaAs layer and a contact layer 126 made of a p-type GaAs layer. On the upper surface of the second semiconductor laminated structure 120,
For example, a second p-type electrode 127 made of a laminated film of Cr / Pt / Au and in ohmic contact with the contact layer 126 is formed. The composition of the mixed crystal of the active layer 122 is selected so that the oscillation wavelength of the laser light is in the 780 nm band.

On the lower surfaces of the first semiconductor laminated structure 110 and the second semiconductor laminated structure 120, an n-type electrode 133 containing, for example, Au, Ge and Ni and being in ohmic contact with the n-type GaAs substrate 100 is formed.

A groove 134 extending in a direction perpendicular to the direction of the optical waveguide is formed at the upper part of the junction between the first semiconductor laminated structure 110 and the second semiconductor laminated structure 120. Contact layer 116 and first p-type electrode 117 of first semiconductor multilayer structure 110
And the contact layer 126 of the second semiconductor laminated structure 120
And the second p-type electrode 127 are electrically insulated.

The center line of the region between the pair of current blocking layers 114 in the first semiconductor laminated structure 110 and the center line of the region between the pair of current blocking layers 124 in the second semiconductor laminated structure 120 And the n-type cladding layer 11 of the first semiconductor multilayer structure 110
1 and the thickness of the n-type cladding layer 121 of the second semiconductor multilayer structure 120 are set to be equal. Thus, the center line of the stripe region 112a of the active layer 112 of the first semiconductor multilayer structure 110 and the center line of the stripe region 122a of the active layer 122 of the second semiconductor multilayer structure 120 match.

The first semiconductor multilayer structure 110 and the second semiconductor multilayer structure 120 are joined to each other at a boundary surface 135. An anti-reflection coating layer 136 made of a dielectric film such as silicon oxide, silicon nitride, or aluminum oxide is formed on a front cleavage plane 131 which is a front end face of the first semiconductor stacked structure 110, and a second semiconductor. On the rear cleavage plane 132 which is the rear end face of the laminated structure 120,
A high reflection coating layer 137 formed by laminating a dielectric film such as silicon oxide, silicon nitride, or aluminum oxide and an amorphous silicon film is formed. In FIG. 1, for convenience of illustration, the anti-reflection coating layer 1 is shown.
36 and the high reflection coating layer 137 are omitted.

The operation of the semiconductor laser device according to the first embodiment will be described below.

First, when a current is injected from the first p-type electrode 117, the current is confined to a region between the pair of current blocking layers 114 in the p-type second cladding layer 115, and the stripe region of the active layer 112 is formed. 6 at 112a
A first laser beam having an oscillation wavelength in the 50 nm band oscillates. In this case, since the energy gap of the AlGaInP layer is larger than the energy gap of the AlGaAs layer, the active layer 122 having the AlGaAs layer is formed of AlGaInP.
The absorption coefficient for the first laser light oscillated from the active layer 112 having an InP layer is large. Therefore, the first laser beam oscillates in the stripe region 112a of the active layer 112 using the front cleavage plane 131 and the boundary surface 135 as resonators, so that the first laser light is 650 nm band from the front cleavage plane 131 on which the anti-reflection coating layer 136 is formed. A first laser beam having a wavelength of?

When a current is injected from the second p-type electrode 127, the current is confined to a region between the pair of current blocking layers 124 in the p-type second cladding layer 125, and a stripe region of the active layer 122 is formed. 7 at 122a
A second laser beam having an oscillation wavelength in the 80 nm band oscillates. In this case, the active layer 1 of the first semiconductor multilayer structure 110
The center line of the twelve stripe regions 112a and the stripe region 122 of the active layer 122 of the second semiconductor multilayer structure 120
Since the active layer 112 having the AlGaInP layer has a small absorption coefficient for the second laser light and is transparent to the second laser light, the center line of the second laser light Is the front cleavage plane 131 and the rear cleavage plane 1
And 32 oscillate as a resonator. Also, the rear cleavage plane 13
Since the high-reflection coating layer 137 is formed on the second laser light 2, the second laser light having a wavelength in the 780 nm band is emitted from the front cleavage surface 131.

Therefore, two laser beams composed of the first laser beam and the second laser beam having different wavelengths can be emitted from one light emitting spot on the front cleavage plane 131.

In the first embodiment, the first semiconductor multilayer structure 110 has an AlGaInP layer, and the second semiconductor multilayer structure 120 has an AlGaAs layer. A first semiconductor multilayer structure having an AlGaN layer located on the side, and an AlGaI layer located on the rear side.
By combining with the second semiconductor laminated structure having an nP layer, a blue-violet laser beam in a 400 nm band and a red laser beam in a 650 nm band may be emitted.
The combination of the first semiconductor multilayer structure having the lGaN layer and the second semiconductor multilayer structure having the AlGaAs layer located on the rear side provides a blue-violet laser
An infrared laser beam in the 80 nm band may be emitted. 2
In a semiconductor laser device having a wavelength, it is preferable to arrange a semiconductor laminated structure that emits laser light having a short wavelength on the laser light emission side.

Hereinafter, a method for manufacturing the semiconductor laser device according to the first embodiment will be described.

First, as a first manufacturing method, a first semiconductor laminated structure 110 and a second semiconductor laminated structure 120 in which the thickness of the n-type cladding layer 111 is equal to the thickness of the n-type cladding layer 121 are separately formed. In the meantime, the first semiconductor multilayer structure 110 is formed in a front region on the n-type GaAs substrate 100.
Are bonded by a solder material or the like, and the second semiconductor laminated structure 120 is formed in a rear region on the n-type GaAs substrate 100.
Are joined by a solder material or the like. In this case, the center line of the region between the pair of current blocking layers 114 in the first semiconductor laminated structure 110 and the center line of the region between the pair of current blocking layers 124 in the second semiconductor laminated structure 120 To match. Thus, the stripe region 112 of the active layer 112 of the first semiconductor multilayer structure 110 is formed.
a of the active layer 1 of the second semiconductor laminated structure 120
The center line of the 22 stripe region 122a coincides with the center line.
In the first manufacturing method, since the first semiconductor multilayer structure 110 and the second semiconductor multilayer structure 120 do not need to be crystal-grown, the n-type GaAs substrate 100
Instead, a conductive substrate such as a silicon substrate may be used.

As a second manufacturing method, the first semiconductor laminated structure 11 is formed on the entire surface of the n-type GaAs substrate 100.
0, and the second semiconductor laminated structure 120 is separately formed, and after removing the rear region of the first semiconductor laminated structure 110 by etching, the second semiconductor laminated structure 120 is formed in the rear region. The laminated structure 120 is bonded, or the second semiconductor laminated structure 120 is formed over the entire surface of the n-type GaAs substrate 100, and the first semiconductor laminated structure 110 is separately formed. After the front region of the second semiconductor laminated structure 120 is removed by etching, the first semiconductor laminated structure 110 is joined to the front region.

(Second Embodiment) Hereinafter, a semiconductor laser device according to a second embodiment of the present invention will be described with reference to FIG.

As shown in FIG. 3, the n-type GaAs substrate 20
0, the AlGaN layer is provided in the front region on the
A first semiconductor laminated structure 210 having a band oscillation wavelength is formed, and a central region on the n-type GaAs substrate 200 has A
A second semiconductor laminated structure 220 having an lGaInP layer and having an oscillation wavelength in the 650 nm band is formed, and n-type GaAs is formed.
Third semiconductor multilayer structure 2 having an AlGaAs layer in the rear region on substrate 200 and having an oscillation wavelength of 780 nm band
30 are formed. In FIG. 3, the p-type electrode, the contact layer, and the n-type electrode are omitted.

The first semiconductor multilayer structure 210 has an active layer 211 whose composition of a mixed crystal is selected so that the oscillation wavelength of laser light is in the 400 nm band.
20 has an active layer 221 whose mixed crystal composition is selected so that the oscillation wavelength of the laser light is in the 650 nm band, and the third semiconductor laminated structure 230 has an oscillation wavelength of 780 nm of the laser light.
Active layer 23 having a mixed crystal composition selected to be in the nm band.
One.

Further, the anti-reflection coating layer 243 is formed on the front cleavage surface 241 of the first semiconductor multilayer structure 210, and the high reflection coating layer 24 is formed on the rear cleavage surface 242 of the third semiconductor multilayer structure 230.
4 are formed.

In the second embodiment, the first semiconductor multilayer structure 210, the second semiconductor multilayer structure 220, and the third
In the order of the semiconductor laminated structure 230, that is, in order from the front side,
Because the energy gap of the active layer is large,
In the active layer 211 of the first semiconductor multilayer structure 210, blue-violet laser light having a wavelength in the 400 nm band oscillates using the front cleavage plane 241 and the first boundary surface 245 as resonators, and the second semiconductor multilayer structure In the active layer 221, red laser light having a wavelength in the 650 nm band oscillates using the front cleavage plane 241 and the second boundary surface 246 as resonators, and in the active layer 231 of the third semiconductor multilayer structure 230. , An infrared laser beam having a wavelength in the 780 nm band oscillates using the front cleavage plane 241 and the rear cleavage plane 242 as resonators. In addition, the anti-reflection coating layer 2
43 and the high-reflection coating layer 244 formed on the rear cleavage plane 242, the blue laser beam having a wavelength of 400 nm and the red laser having a wavelength of 650 nm are emitted from the front cleavage plane 241. Light and 78
Infrared laser light having a wavelength in the 0 nm band is emitted.

(Third Embodiment) A semiconductor laser device according to a third embodiment of the present invention will be described below with reference to FIGS. FIG. 4 is a perspective view of the semiconductor laser device according to the third embodiment, and FIG. 5 is a sectional view taken along line VV in FIG.

As shown in FIGS. 4 and 5, n-type GaAs
A first semiconductor multilayer structure 310 having an AlGaInP layer and having an oscillation wavelength in the 650 nm band is formed in a front region on the substrate 300, and the n-type GaAs substrate 10
In the region on the rear side above the AlGaAs layer 780n
A second semiconductor laminated structure 320 having an m-band oscillation wavelength is formed. Note that, at the rear end of the first semiconductor multilayer structure 310, a sidewall growth portion 338 made of a multilayer having an AlGaInP layer is formed.

The first semiconductor laminated structure 310 has an n-type Ga
An n-type cladding layer 3 composed of an n-type AlGaInP layer formed sequentially from the lower side in a front region on the As substrate 300
11, an active layer 312 in which an AlGaInP layer (barrier layer) and a GaInP layer (well layer) are stacked, p-type AlGa
P-type first cladding layer 313 made of InP layer, n-type A
a pair of current blocking layers 314 made of an lInP layer and a p-type second cladding layer 315 made of a p-type AlGaInP layer
And a contact layer 316 made of a p-type GaAs layer. On the upper surface of the first semiconductor multilayer structure 310, a first p-type layer which is in ohmic contact with the contact layer 316 is formed.
A mold electrode 317 is formed. The active layer 312 is
The composition of the mixed crystal is selected so that the oscillation wavelength of the laser light is in the 650 nm band.

The second semiconductor laminated structure 320 has n-type Ga
An n-type cladding layer 32 composed of an n-type AlGaAs layer, which is sequentially formed from a lower side in a rear region on the As substrate 300.
1. AlGaAs layer (barrier layer) and GaAs layer (well layer)
, A p-type first cladding layer 323 made of a p-type AlGaAs layer, and an n-type AlGaAs
a pair of current blocking layers 324 composed of s layers, p-type AlG
It comprises a p-type second cladding layer 325 made of an aAs layer and a contact layer 326 made of a p-type GaAs layer. The second p-type electrode 3 in ohmic contact with the contact layer 326 is provided on the upper surface of the second semiconductor
27 are formed. The composition of the mixed crystal of the active layer 322 is selected so that the oscillation wavelength of the laser light is in the 780 nm band.

The n-type GaAs substrate 30 is provided on the lower surfaces of the first semiconductor laminate structure 310 and the second semiconductor laminate structure 320.
An n-type electrode 333 in ohmic contact with 0 is formed.

The first semiconductor multilayer structure 310 and the second semiconductor multilayer structure 320 are joined to each other at a boundary surface 335. A groove 334 extending in a direction orthogonal to the direction in which the optical waveguide extends is formed above the joint between the first semiconductor laminated structure 310 and the second semiconductor laminated structure 320. Semiconductor laminated structure 3
Ten contact layers 316 and first p-type electrode 317
And the contact layer 326 of the second semiconductor multilayer structure 320
And the second p-type electrode 327 are electrically insulated. The side wall growth portion 338 protrudes from the bottom surface of the groove 334.

An anti-reflection coating layer 336 is formed on the front cleavage plane 331 of the first semiconductor multilayer structure 310, and the rear cleavage plane 3 of the second semiconductor multilayer structure 320 is formed.
32 has a high reflection coating layer 337 formed thereon.

The center line of the region between the pair of current blocking layers 314 in the first semiconductor multilayer structure 310 and the center line of the region between the pair of current blocking layers 324 in the second semiconductor multilayer structure 320 And the n-type cladding layer 31 of the first semiconductor multilayer structure 310
1 and the thickness of the n-type cladding layer 321 of the second semiconductor multilayer structure 320 are set to be equal. Thus, the center line of the stripe region 312a of the active layer 312 of the first semiconductor multilayer structure 310 and the center line of the stripe region 322a of the active layer 322 of the second semiconductor multilayer structure 320 match.

Hereinafter, the operation of the semiconductor laser device according to the third embodiment will be described.

First, when a current is injected from the first p-type electrode 317, the current is confined in a region between the pair of current blocking layers 314 in the p-type second cladding layer 315, and the stripe of the active layer 312 is formed. A first laser beam having an oscillation wavelength in the 650 nm band oscillates in the region 312a. In this case, the first laser beam oscillates using the front cleavage plane 331 and the boundary surface 335 as resonators in the stripe region 312a of the active layer 312, but the side wall growth portion 338
Is very small in comparison with the cavity length, so that the influence of the side wall growth portion 338 can be neglected. Therefore, the first laser light having a wavelength in the 650 nm band is emitted from the front cleavage plane 331 on which the antireflection coating layer 336 is formed.

When a current is injected from the second p-type electrode 327, the current is confined to a region between the pair of current blocking layers 324 in the p-type second cladding layer 325, and the stripe region of the active layer 322 is formed. 7 at 322a
A first laser beam having an oscillation wavelength in the 80 nm band oscillates. The center line of the stripe region 312a of the active layer 312 of the first semiconductor multilayer structure 310 matches the center line of the stripe region 322a of the active layer 322 of the second semiconductor multilayer structure 320, and has an AlGaInP layer. Since the active layer 312 has a small absorption coefficient for the second laser light and is transparent to the second laser light, the second laser light oscillates using the front cleavage plane 331 and the rear cleavage plane 332 as resonators. I do. In addition, since the high-reflection coating layer 337 is formed on the rear cleavage plane 332, the second laser light having a wavelength in the 780 nm band is emitted from the front cleavage plane 331.

Therefore, two laser beams having different wavelengths, ie, the first laser beam and the second laser beam, having different wavelengths can be emitted from one emission spot on the front cleavage plane 331.

In the third embodiment, the first semiconductor laminated structure 310 has an AlGaInP layer and the second semiconductor laminated structure 320 has an AlGaAs layer. A first semiconductor multilayer structure having an AlGaN layer located on the side, and an AlGaI layer located on the rear side.
By combining with the second semiconductor laminated structure having an nP layer, a blue-violet laser beam in a 400 nm band and a red laser beam in a 650 nm band may be emitted.
The combination of the first semiconductor multilayer structure having the lGaN layer and the second semiconductor multilayer structure having the AlGaAs layer located on the rear side provides a blue-violet laser
An infrared laser beam in the 80 nm band may be emitted. 2
In a semiconductor laser device having a wavelength, it is preferable to arrange a semiconductor laminated structure that emits laser light having a short wavelength on the laser light emission side.

Hereinafter, a method of manufacturing the semiconductor laser device according to the third embodiment will be described with reference to FIGS.
(A), (b), FIG. 8 (a), (b) and FIG. 9 (a),
(B), FIG. 10 (a), (b) and FIG. 11 (a),
This will be described with reference to FIG.

First, as shown in FIGS. 6A and 6B, an n-type cladding layer 321 and an AlGaAs layer made of an n-type AlGaAs layer are formed on an n-type GaAs substrate 300 by MOCVD or MBE. An active layer 322 formed by stacking a GaAs layer and a p-type AlGaAs layer
A first cladding layer 323 and a current blocking layer 324 composed of an n-type AlGaAs layer are sequentially grown.

Next, as shown in FIGS. 7A and 7B, a groove extending in the optical waveguide direction is formed in the current block layer 324 by photolithography and etching so that the p-type first cladding layer 323 is exposed. After forming into MO
P-type first cladding layer 3 by CVD or MBE
23 and a pair of current blocking layers 324, p-type Al
A p-type second cladding layer 325 made of a GaAs layer;
A contact layer 326 made of a type GaAs layer is sequentially grown to form a first provisional semiconductor stacked structure 340.

Next, as shown in FIGS. 8A and 8B, the front portion of the first temporary semiconductor laminated structure 340 is removed by etching until the n-type GaAs substrate 300 is exposed. A second semiconductor multilayer structure 320 including a portion on the rear side of one temporary semiconductor multilayer structure 340 is formed.

Next, as shown in FIGS. 9A and 9B, an n-type GaAs substrate 300 is formed on the front region and the second semiconductor laminated structure 320 by MOCVD or MBE. -Type cladding layer 31 composed of an n-type AlGaInP layer having the same thickness as that of type-cladding layer 321
1. After sequentially growing an active layer 312 formed by stacking an AlGaInP layer and a GaInP layer, a p-type first cladding layer 313 formed of a p-type AlGaInP layer, and a current block layer 314 formed of an n-type AlInP layer, A groove extending in the optical waveguide direction is formed in the block layer 314 so that the p-type first cladding layer 313 is exposed.
OCVD or MBE is performed to obtain p-type AlGaIn
P-type second cladding layer 315 made of P layer and p-type Ga
The contact layer 316 made of an As layer is grown,
Is formed.

Next, as shown in FIGS. 10A and 10B, a portion of the second provisional semiconductor laminated structure 350 above the second semiconductor laminated structure 320 is removed by etching, and A first semiconductor multilayer structure 310 including a portion on the front side of the temporary semiconductor multilayer structure 350 is formed.
In this way, the rear end of the first semiconductor multilayer structure 310 on the side of the second semiconductor multilayer structure 320 has AlGa
The sidewall growth portion 338 made of the stacked body having InP remains. Note that the side wall growth portion 338 is formed only very thinly due to the difference in the plane orientation of the crystal growth surface between the side wall growth portion 338 and the front end surface of the second semiconductor laminated structure 320.

Next, as shown in FIGS. 11A and 11B, the contact layer 316 of the first semiconductor multilayer structure 310 is formed.
A groove 334 extending in a direction orthogonal to the direction in which the optical waveguide extends is formed at a junction between the first semiconductor layer 320 and the contact layer 326 of the second semiconductor multilayer structure 320, and then the first p-type electrode 317 is formed on the contact layer 316. Formed and contact layer 32
A second p-type electrode 327 is formed on 6. Further, an n-type electrode 333 is formed on the lower surface of the n-type GaAs substrate 300. After that, the anti-reflection coating layer 336 is formed on the front cleavage plane 331 of the first semiconductor multilayer structure 310, and the high reflection coating layer 337 is formed on the rear cleavage plane 332 of the second semiconductor multilayer structure 320.

In the method of manufacturing the semiconductor laser device according to the third embodiment, the first temporary structure having the same laminated structure as the second semiconductor laminated structure 320 over the entire surface of the n-type GaAs substrate 300 is used. After the semiconductor laminated structure 340 is grown, a portion on the front side of the first provisional semiconductor laminated structure 340 is removed, and a second semiconductor laminated structure 320 is formed in a rear region on the n-type GaAs substrate 300. And then n
A second provisional semiconductor laminated structure 350 having the same laminated structure as the first semiconductor laminated structure 310 is grown over the front region on the type GaAs substrate 300 and over the entire surface of the second semiconductor laminated structure 320. After that, the portion of the second provisional semiconductor laminated structure 350 above the second semiconductor laminated structure 320 is removed, and the first semiconductor laminated structure 310 is placed in the front region on the n-type GaAs substrate 300. Instead, after forming a first provisional semiconductor laminated structure having the same laminated structure as the first semiconductor laminated structure 310 over the entire surface of the n-type GaAs substrate 300, the first Removing the rear part of the provisional semiconductor laminated structure of
A first semiconductor laminated structure 310 is formed in a front region on the n-type GaAs substrate 300, and then the n-type GaAs substrate 30 is formed.
After growing a second provisional semiconductor stacked structure having the same stacked structure as the second semiconductor stacked structure 320 over the entire area on the rear side above the first semiconductor stacked structure 310 and the first semiconductor stacked structure 310, The portion above the first semiconductor multilayer structure 310 in the second temporary semiconductor multilayer structure is removed, and the n-type G
The second semiconductor laminated structure 320 may be formed in a rear region on the aAs substrate 300.

(First Modification of Third Embodiment) Hereinafter, a semiconductor laser device according to a first modification of the third embodiment of the present invention will be described with reference to FIGS. FIG. 12 is a perspective view of a semiconductor laser device according to a first modification of the third embodiment, and FIG. 13 is a sectional view taken along line XIII-XIII in FIG.

In the first modified example of the third embodiment, the same members as those of the third embodiment described with reference to FIGS. Omitted.

As a feature of the first modification of the third embodiment, as shown in FIG. 12 and FIG.
Does not project from the bottom surface of the groove 334,
The upper surface of the groove 38 and the bottom surface of the groove 334 are flush with each other.

The portion protruding from the bottom surface of the groove 334 in the side wall growth portion 338 forms a groove 334 at the junction between the contact layer 316 of the first semiconductor laminated structure 310 and the contact layer 326 of the second semiconductor laminated structure 320. (See FIGS. 11 (a) and 11 (b)).

(Second Modification of Third Embodiment) Hereinafter, a semiconductor laser device according to a second modification of the third embodiment and a method of manufacturing the same will be described with reference to FIGS. 14 (a) and 14 (b). I will explain it. FIG. 14A is a perspective view of a semiconductor laser device according to a second modification of the third embodiment.
FIG. 14B is a cross-sectional view taken along line XIVb-XIVb in FIG.

In the second modified example of the third embodiment, the same members as those of the third embodiment described with reference to FIGS. Omitted.

As a feature of the second modification of the third embodiment, as shown in FIGS. 14A and 14B, a junction between the first semiconductor laminated structure 310 and the second semiconductor laminated structure 320 is formed. Has a direction extending perpendicular to the direction of the optical waveguide and T
A groove 334A having a U-shaped cross section is formed, and the groove 334A is filled with a dielectric member 339 made of a refractive index matching resin, silicon oxide, silicon nitride, or the like. Thereby, the first semiconductor laminated structure 310 and the second
Is electrically insulated from the semiconductor laminated structure 320 of FIG.

By the way, the first semiconductor laminated structure 310 that oscillates red laser light is the second semiconductor laminated structure 310 that oscillates infrared laser light.
Since the oscillation threshold current is larger than that of the semiconductor multilayer structure 320 of FIG.
A small amount of reactive current may flow from the first semiconductor laminated structure 310 to the second semiconductor laminated structure 320. However, in the second modified example, since the insulating dielectric member 339 is interposed at the joint between the first semiconductor laminated structure 310 and the second semiconductor laminated structure 320,
Reactive current stops flowing.

The refractive index of the dielectric member 339 is the first
The effective refractive index of the stripe region 312a of the active layer 312 in the semiconductor laminated structure 310 of FIG.
It is preferably a value between a and the effective refractive index of a.

In this way, the coupling efficiency between the first laser beam emitted from the active layer 312 of the first semiconductor multilayer structure 310 and the active layer 322 of the second semiconductor multilayer structure 320 is improved, and , Second semiconductor laminated structure 320
Since the coupling efficiency between the second laser beam emitted from the active layer 322 and the active layer 312 of the first semiconductor multilayer structure 310 is improved, the optical characteristics of the semiconductor laser device are improved.

To manufacture the semiconductor laser device according to the second modification of the third embodiment, the contact layer 316 of the first semiconductor multilayer structure 310 and the second semiconductor multilayer structure 3
After forming a groove 334 at the junction with the contact layer 326 of FIG. 20 (see FIG. 13), the side wall growth portion 338 is removed by etching to form a T-shaped groove 334A, and then the T-shaped groove 334A is formed. 334A is filled with a dielectric member 339.

(Fourth Embodiment) A semiconductor laser device according to a fourth embodiment of the present invention will be described with reference to FIGS. FIG. 15A is a perspective view of a semiconductor laser device according to the fourth embodiment.
FIG. 15B is a cross-sectional view taken along line XVb-XVb in FIG.

As shown in FIGS. 15A and 15B, n
AlGaAs is formed in the front region on the type GaAs substrate 400.
A first semiconductor laminated structure 410 having an InP layer and having an oscillation wavelength of 650 nm band is formed, and a rear region on the n-type GaAs substrate 400 has an AlGaAs layer and has an oscillation wavelength of 780 nm band. Second semiconductor laminated structure 4 having
20 are formed.

The first semiconductor laminated structure 410 has n-type Ga
An n-type cladding layer 411 made of an n-type AlGaInP layer and an AlGaInP layer (barrier layer) sequentially formed in a region on the As substrate 400 on the front side in the emission direction of the laser beam.
Layer 4 formed by stacking a GaInP layer (well layer)
12, a first p-type cladding layer 413 composed of a p-type AlGaInP layer, a current blocking layer 414 composed of a pair of n-type AlInP layers, and a second p-type layer composed of a p-type AlGaInP layer.
It comprises a mold cladding layer 415 and a contact layer 416 made of a p-type GaAs layer. Contact layer 41
A first p-side electrode 417 that is in ohmic contact with the contact layer 416 is formed on the upper surface of 6. Active layer 4
In No. 12, the composition of the mixed crystal is set so that the oscillation wavelength of the laser light is in the approximately 650 nm band.

The second semiconductor laminated structure 420 has an n-type Ga
An n-type cladding layer 421, an AlGaAs layer (barrier layer), and a G layer, which are sequentially formed in a region on the rear side of the laser beam emission direction on the As substrate 400, are formed of an n-type AlGaAs layer.
an active layer 422 in which an aAs layer (well layer) is laminated;
First p-type cladding layer 42 made of p-type AlGaAs layer
3, a current blocking layer 424 composed of a pair of n-type AlGaAs layers, a second p-type cladding layer 425 composed of a p-type AlGaInP layer, and a contact layer 426 composed of a p-type GaAs layer. On the upper surface of the contact layer 426, a second p-side electrode 427 that is in ohmic contact with the contact layer 426 is formed at a distance from the first p-side electrode 417. The composition of the mixed crystal of the active layer 422 is set such that the oscillation wavelength of the laser light is in the approximately 780 nm band.

On the lower surface of the n-type GaAs substrate 400, an n-side electrode 433 that is in ohmic contact with the substrate 400 is formed.

An antireflection coating film 436 made of a dielectric film such as silicon oxide, silicon nitride, or aluminum oxide is formed on the front cleavage surface 431 of the active layer 412 in the first semiconductor multilayer structure 410. Rear cleavage plane 432 of active layer 422 in second semiconductor multilayer structure 420
Is formed with a high-reflection coat film 437 formed by laminating a dielectric film such as silicon oxide, silicon nitride, or aluminum oxide and amorphous silicon.

As a first feature of the fourth embodiment, the first feature
The thickness of the n-type cladding layer 411 of the semiconductor laminated structure 410 of the second
1 greater than the thickness. Thus, the stripe region 412a of the active layer 412 of the first semiconductor multilayer structure 410
Are located above the stripe region 422 a of the active layer 422 of the second semiconductor multilayer structure 420.

More specifically, the first semiconductor laminated structure 4
The thickness of the n-type cladding layer 411 is larger than the total thickness of the n-type cladding layer 421, the active layer 422, and the first p-type cladding layer 423 of the second semiconductor laminated structure 420, and N-type cladding layer 411, active layer 412, and first p-type cladding layer 41 of semiconductor multilayer structure 410
The total thickness of No. 3 is smaller than the total thickness of the n-type cladding layer 421, the active layer 422, the first p-type cladding layer 423, and the second p-type cladding layer 425 of the second semiconductor multilayer structure 420. As a result, the rear end face of the stripe region 412a of the active layer 412 of the first semiconductor multilayer structure 410 is
Second p-type cladding layer 425 of the semiconductor laminated structure 420 of FIG.
To the front end face of

As a second feature of the fourth embodiment, the first feature
Second p-type cladding layer 415 of the semiconductor multilayer structure 410 of FIG.
And the composition of the second p-type cladding layer 425 of the second semiconductor laminated structure 420 is the same.

Hereinafter, the operation of the semiconductor laser device according to the fourth embodiment will be described.

First, when a current is injected from the first p-side electrode 417, the injected current is applied to the second p-type cladding layer 41.
5 is narrowed to a region between the pair of current blocking layers 414, and 650n is formed in the stripe region 412a.
A first laser beam having an m-band oscillation wavelength oscillates.

The composition of the second p-type cladding layer 415 of the first semiconductor multilayer structure 410 and the second semiconductor multilayer structure 420
Since the composition of the second p-type cladding layer 425 is the same as that of the second p-type cladding layer 425, reflection of laser light due to the difference between the refractive index and the absorption coefficient does not occur at the boundary surface 435. Therefore, the first
Oscillates using the front cleavage plane 431 and the rear cleavage plane 432 as substantial resonators, and the non-reflection coating film 436
Are emitted as laser light having a wavelength in the 650 nm band from the front cleavage plane 431 in which is formed.

As described above, the second semiconductor laminated structure 420
Since the energy gap of the second p-type cladding layer 425 is larger than the energy gap of the active layer 412 of the first semiconductor multilayer structure 410, the second p-type cladding layer 425 Since it is transparent, light absorption loss does not occur in the second semiconductor laminated structure 420.

In the fourth embodiment, the composition of the second p-type cladding layer 415 of the first semiconductor multilayer structure 410 and the composition of the second p-type cladding layer 425 of the second semiconductor multilayer structure 420 are different. Although the composition is the same, the present invention is not limited to this, and the energy gap of the second p-type cladding layer 425 may be made larger than the energy gap of the active layer 412 of the first semiconductor multilayer structure 410.

When a current is injected from the second p-side electrode 427, the injected current is applied to the second p-type cladding layer 42.
5, the region between the pair of current blocking layers 424 is narrowed to 780n in the stripe region 422a.
A second laser beam having an m-band oscillation wavelength oscillates.

Active layer 42 of second semiconductor multilayer structure 420
The front end surface of the second stripe region 422a is joined to the rear surface of the n-type cladding layer 411 of the first semiconductor multilayer structure 410. Since the n-type cladding layer 411 made of the n-type AlGaInP layer is transparent to the second laser light, the second laser light oscillates using the front cleavage plane 431 and the rear cleavage plane 432 as resonators. . Also, the rear cleavage plane 4
32 has a high reflection coating film 437 formed thereon,
A second laser beam having a wavelength in the 780 nm band is emitted from the front cleavage plane 431.

Therefore, according to the fourth embodiment, the stripe region 41 of the active layer 412 on the front cleavage plane 431 is formed.
2a becomes a light emission spot of the first laser beam, and the stripe region 412 of the active layer 412 on the front cleavage plane 431 is formed.
Since the second light emitting spot is formed below “a”, a two-wavelength semiconductor laser device having two vertically adjacent light emitting spots can be realized. In this case, the pitch between the first light emitting spot and the second light emitting spot is equal to the pitch of the light emitting spot in the two-wavelength semiconductor laser device in which the first semiconductor laminated structure and the second semiconductor laminated structure are arranged in parallel in the horizontal direction. Very small compared to the pitch.

In the fourth embodiment, the position of the active layer 412 of the first semiconductor multilayer structure 410 from the substrate surface is smaller than the position of the active layer 422 of the second semiconductor multilayer structure 420 from the substrate surface. Was also above, but instead of this
The position of the active layer 422 of the semiconductor laminated structure 420 of FIG.
Above the position of the active layer 412 of the semiconductor multilayer structure 410 of FIG. In this case, the second semiconductor laminated structure 4
Active layer 41 of first semiconductor multilayer structure 410 in 20
The composition of the semiconductor layer facing the second semiconductor layer 2 may be substantially the same as that of the n-type cladding layer 411 of the first semiconductor multilayer structure 410.

In the fourth embodiment, the first semiconductor multilayer structure 410 has an AlGaInP layer,
Has a AlGaAs layer, but instead has a first semiconductor laminated structure having an AlGaN layer located on the front side and an AlGaI layer located on the rear side.
By combining with the second semiconductor laminated structure having an nP layer, a blue-violet laser beam in a 400 nm band and a red laser beam in a 650 nm band may be emitted.
The combination of the first semiconductor multilayer structure having the lGaN layer and the second semiconductor multilayer structure having the AlGaAs layer located on the rear side provides a blue-violet laser
An infrared laser beam in the 80 nm band may be emitted. 2
In a semiconductor laser device having a wavelength, it is preferable to arrange a semiconductor laminated structure that emits laser light having a short wavelength on the laser light emission side.

Hereinafter, a method for manufacturing the semiconductor laser device according to the fourth embodiment will be described.

The first manufacturing method uses the n-type cladding layer 411.
The first semiconductor multilayer structure 410 and the second semiconductor multilayer structure 420 are separately manufactured so that the thickness of the first semiconductor multilayer structure 410 is larger than the thickness of the n-type cladding layer 421. Then, n-type G
The first semiconductor laminated structure 410 is fixed to the front region on the aAs substrate 400 by a solder material or the like, and the n-type Ga
The second semiconductor laminated structure 420 is fixed to the rear region on the As substrate 400 with a solder material or the like, and the first semiconductor laminated structure 410 and the second semiconductor laminated structure 420 are joined at the boundary surface 435. In this case, the center line of the stripe region 412a of the active layer 412 of the first semiconductor multilayer structure 410 is aligned with the center line of the stripe region 422a of the active layer 422 of the second semiconductor multilayer structure 420. still,
In the first manufacturing method, since the first and second semiconductor multilayer structures 410 and 420 do not need to be grown on the n-type GaAs substrate 400, the n-type GaAs substrate 400 is not required.
Instead, a conductive substrate may be used.

The second manufacturing method uses the n-type GaAs substrate 40
The first semiconductor multilayer structure 410 is formed over the entire surface of the first semiconductor multilayer structure 410, and the second semiconductor multilayer structure 420 is separately formed, and the rear region of the first semiconductor multilayer structure 410 is etched. After the removal, the second semiconductor laminated structure 420 is joined to the rear region, or the second semiconductor laminated structure 420 is formed over the entire surface of the n-type GaAs substrate 400 and the first semiconductor laminated structure 420 is formed. The semiconductor stacked structure 410 is separately formed, the front region of the second semiconductor stacked structure 420 is removed by etching, and then the first semiconductor stacked structure 410 is joined to the front region. In this case, the first semiconductor laminated structure 4
The center line of the stripe region 412 a of the ten active layers 412 is aligned with the center line of the stripe region 422 a of the active layer 422 of the second semiconductor multilayer structure 420.

(Fifth Embodiment) Hereinafter, a semiconductor laser device according to a fifth embodiment of the present invention will be described with reference to FIG.
This will be described with reference to (a) and (b). Note that FIG.
(A) is a perspective view of a semiconductor laser device according to a fifth embodiment, and (b) of FIG. 16 shows XVIb in (a) of FIG.
It is sectional drawing of the -XVIb line.

As shown in FIGS. 16A and 16B, for example, an AlGaI layer is formed in a region on the front side in the laser light emission direction on a substrate 500 made of conductive silicon.
A first semiconductor laminated structure 510 having an nP layer and having an oscillation wavelength in the 650 nm band is provided. An AlGaAs layer is provided in a region on the substrate 500 on the rear side in the emission direction of the laser light, and the oscillation wavelength in the 780 nm band is changed. The second semiconductor multilayer structure 520 is provided between the first semiconductor multilayer structure 510 and a gap 534.

The first semiconductor laminated structure 510 has an active layer 512 in which the composition of the mixed crystal is set so that the oscillation wavelength of the laser light is in the 650 nm band. An anti-reflection coating film 536 is formed on the surface, and the first end of the first semiconductor multilayer structure 510 has a higher reflectance than the anti-reflection coating film 536 on the rear end surface.
The end face coat film 538 is formed.

The second semiconductor laminated structure 520 has an active layer 522 in which the composition of the mixed crystal is set so that the oscillation wavelength of the laser light is in the 780 nm band. A high-reflection coating film 537 is formed on the end surface, and a second end-surface coating film 539 having a lower reflectance than the high-reflection coating film 537 is formed on the front end surface of the second semiconductor multilayer structure 520. .

In the fifth embodiment, the center line of the region between the pair of current blocking layers in the first semiconductor laminated structure 510 and the region between the pair of current blocking layers in the second semiconductor laminated structure 520 are arranged. And the thickness of the n-type cladding layer of the first semiconductor multilayer structure 510 and the thickness of the n-type cladding layer of the second semiconductor multilayer structure 520 are set to be equal. Thus, the center line of the stripe region of the active layer 512 of the first semiconductor multilayer structure 510 and the center line of the stripe region of the active layer 522 of the second semiconductor multilayer structure 520 match.

Hereinafter, the operation of the semiconductor laser device according to the fifth embodiment will be described.

First, when a current is injected into the first semiconductor multilayer structure 510, the first layer having an oscillation wavelength of 650 nm in the active layer 512 of the first semiconductor multilayer structure 510.
Of the non-reflective coating film 5 on the active layer 512
The light oscillates with the first end face coat film 538 and the first end face coat film 538 as resonator end faces, and is emitted from the non-reflection coat film 536.

When a current is injected into the second semiconductor multilayer structure 520, the second laser light having an oscillation wavelength in the 780 nm band in the active layer 522 of the second semiconductor multilayer structure 520 is applied to the active layer 522. The second end face coat film 539 and the high reflection coat film 537 oscillate as resonator end faces, and are emitted from the second end face coat film 539.

Therefore, according to the fifth embodiment, the second laser light is applied to the active layer 512 of the first semiconductor laminated structure 510.
Then, the light propagates through the stripe-shaped optical waveguide formed from the light-emitting spot of the antireflection coating film 536 determined by the optical waveguide of the first semiconductor multilayer structure 510. As a result, a two-wavelength semiconductor laser device in which the first laser light and the second laser light are emitted from one light emitting spot can be realized.

In the fifth embodiment, the center line of the stripe region of the active layer 512 of the first semiconductor multilayer structure 510 and the active layer 522 of the second semiconductor multilayer structure 520 are formed.
The case where the center line of the stripe region coincides with the center line of the stripe region of the active layer 512 of the first semiconductor multilayer structure 510 is described as in the fourth embodiment. It may be located above or below the center line of the stripe region of the active layer 522 of the stacked structure 520. Also in this case, if the first semiconductor laminated structure 510 located on the front side is transparent to the second laser beam, the two light emitting spots located above and below and adjacent to each other have different wavelengths from each other. Laser light can be oscillated.

In the fifth embodiment, the first semiconductor multilayer structure 510 has an AlGaInP layer and the second semiconductor multilayer structure 520 has an AlGaAs layer. A first semiconductor multilayer structure having an AlGaN layer located on the side, and an AlGaI layer located on the rear side.
By combining with the second semiconductor laminated structure having an nP layer, a blue-violet laser beam in a 400 nm band and a red laser beam in a 650 nm band may be emitted.
The combination of the first semiconductor multilayer structure having the lGaN layer and the second semiconductor multilayer structure having the AlGaAs layer located on the rear side provides a blue-violet laser
An infrared laser beam in the 80 nm band may be emitted. 2
In a semiconductor laser device having a wavelength, it is preferable to arrange a semiconductor laminated structure that emits laser light having a short wavelength on the laser light emission side.

Hereinafter, a method for manufacturing the semiconductor laser device according to the fifth embodiment will be described.

First, a chip-shaped first having a non-reflective coating film 536 on the front end surface and a first end surface coating film 538 having a higher reflectivity than the non-reflective coating film 536 on the rear end surface.
Having a semiconductor laminated structure (first laser chip) 510 and a second end surface coating film 539 having a high reflection coating film 537 on the rear end surface and a lower reflectance than the high reflection coating film 537 on the front end surface. And a second semiconductor laminated structure (second laser chip) 520 having a shape like that.

Next, the first region is placed on the front region on the substrate 500.
The semiconductor laminated structure 510 is fixed by a solder material or the like, and the second semiconductor laminated structure 520 is soldered in the rear region on the substrate 500 so that a gap 534 is formed between the second semiconductor laminated structure 520 and the first semiconductor laminated structure 510. It is fixed by materials. In this case, the center line of the stripe region of the active layer 512 of the first semiconductor multilayer structure 510 and the center line of the second semiconductor multilayer structure 520
Center line of the stripe region of the active layer 522.

(Modification of Fifth Embodiment) Hereinafter, a semiconductor laser device according to a modification of the fifth embodiment will be described with reference to FIG. FIG. 17 is a perspective view of a semiconductor laser device according to a modification of the fifth embodiment.

In the modification of the fifth embodiment,
The same members as those of the fifth embodiment described with reference to FIGS. 16A and 16B are denoted by the same reference numerals, and description thereof will be omitted.

As a feature of the modification of the fifth embodiment, as shown in FIG. 17, a gap 534 between a first semiconductor multilayer structure 510 and a second semiconductor multilayer structure 520 on a substrate 500 is formed. Is filled with a dielectric member 540 made of a refractive index matching resin, silicon oxide, silicon nitride, or the like. The dielectric member 540 has a refractive index of the stripe region of the active layer 512 in the first semiconductor multilayer structure 510. It has a value between the effective refractive index and the effective refractive index of the stripe region of the active layer 522 in the second semiconductor multilayer structure 520.

Therefore, the first semiconductor laminated structure 510 and the second semiconductor laminated structure 520 are electrically insulated by the dielectric member 540. Further, since the coupling efficiency between the first laser beam emitted from the active layer 512 of the first semiconductor multilayer structure 510 and the active layer 522 of the second semiconductor multilayer structure 520 is improved, the optical characteristics of the semiconductor laser device are improved. Characteristic is improved.

(Sixth Embodiment) Hereinafter, a semiconductor laser device according to a sixth embodiment of the present invention will be described with reference to FIG. FIG. 18 is a sectional view of a semiconductor laser device according to the sixth embodiment.

As shown in FIG. 18, in the semiconductor laser device according to the sixth embodiment, a substrate 600 made of conductive silicon is sequentially arranged from a front region to a rear region in a laser light emission direction. A first semiconductor laminated structure 610 having an AlGaInN layer and an oscillation wavelength in the 400 nm band, and an AlGaInP layer having an oscillation wavelength of 65 nm.
A second semiconductor laminated structure 620 of 0 nm band, and AlG
and a third semiconductor laminated structure 630 having an aAs layer and having an oscillation wavelength in the 780 nm band.

The first semiconductor laminated structure 610 has an active layer 612 in which the composition of the mixed crystal is set so that the oscillation wavelength of the laser beam is in the 400 nm band. An anti-reflection coating film 636 is formed on the surface. The second semiconductor laminated structure 620 has an active layer 622 in which the composition of the mixed crystal is set so that the oscillation wavelength of the laser light is in the 650 nm band. The third semiconductor multilayer structure 630 has an active layer 632 in which the composition of the mixed crystal is set so that the oscillation wavelength of the laser light is in the 780 nm band. A high reflection coating film 637 is formed.

A first dielectric member 638 made of a refractive index matching resin, silicon oxide, silicon nitride, or the like is filled between the first semiconductor laminated structure 610 and the second semiconductor laminated structure 620 on the substrate 600. Have been. The refractive index of the first dielectric member 638 is equal to the first semiconductor laminated structure 61.
0, the effective refractive index of the stripe region of the active layer 612 and the active layer 622 of the second semiconductor laminated structure 620.
Of the stripe region with the effective refractive index.

A second dielectric member 639 made of a refractive index matching resin, silicon oxide, silicon nitride, or the like is filled between the second semiconductor laminated structure 620 and the third semiconductor laminated structure 630 on the substrate 600. Have been. The refractive index of the second dielectric member 639 is determined by the second semiconductor laminated structure 62.
0 and the active layer 632 in the third semiconductor multilayer structure 630.
Of the stripe region with the effective refractive index.

The center line of the region between the pair of current blocking layers in the first semiconductor laminated structure 610 and the center line of the region between the pair of current blocking layers in the second semiconductor laminated structure 620 are aligned. In addition, the thickness of the n-type cladding layer of the first semiconductor multilayer structure 610 and the thickness of the n-type cladding layer of the second semiconductor multilayer structure 620 are set to be equal. In addition, the center line of the region between the pair of current block layers in the second semiconductor laminated structure 620 matches the center line of the region between the pair of current block layers in the third semiconductor laminated structure 630. In addition, the thickness of the n-type cladding layer of the second semiconductor multilayer structure 620 and the thickness of the n-type cladding layer of the third semiconductor multilayer structure 630 are set to be equal.

Thus, the first semiconductor laminated structure 61
0, the center line of the stripe region of the active layer 612, the center line of the stripe region of the active layer 622 of the second semiconductor multilayer structure 620, and the active layer 63 of the third semiconductor multilayer structure 630.
The center lines of the two stripe regions coincide with each other.

Hereinafter, the operation of the semiconductor laser device according to the sixth embodiment will be described.

First, when a current is injected into the first semiconductor laminated structure 610, the second semiconductor laminated structure 620 becomes
The first laser light oscillates from the stripe region of the active layer 612 of the first semiconductor laminated structure 610 and has a large absorption coefficient with respect to the first laser light having an oscillation wavelength in the 400 nm band. Difficult to propagate inside.
Therefore, the first laser light oscillates with the non-reflection coating film 636 and the first dielectric member 638 serving as resonator end faces, and is emitted from the non-reflection coating film 636.

Next, when a current is injected into the second semiconductor multilayer structure 620, the first semiconductor multilayer structure 610 becomes
The second semiconductor layer structure 620 oscillates from the stripe region of the active layer 622 and has a small absorption coefficient for a second laser beam having an oscillation wavelength in the 650 nm band, and is transparent to the second laser beam. Third semiconductor laminated structure 630
Has a large absorption coefficient for the second laser light,
Is difficult to propagate into the third semiconductor laminated structure 630. Therefore, the second laser light oscillates using the front end face of the first semiconductor laminated structure 610 and the second semiconductor laminated structure 620 as a resonator, and is emitted from the anti-reflection coating film 636 side.

When a current is injected into the third semiconductor multilayer structure 630, the first laser beam having an oscillation wavelength in the 780 nm band in the active layer 632 of the third semiconductor multilayer structure 630 is applied to the first laser beam. Since both the semiconductor laminated structure 610 and the second semiconductor laminated structure 620 have a small absorption coefficient and are transparent to the third laser light, the third laser light is transmitted through the non-reflection coating film 636 and the second dielectric It oscillates with the body member 639 as a resonator and exits from the non-reflective coating film 636.

Therefore, according to the sixth embodiment, the second laser light is applied to the active layer 612 of the first semiconductor laminated structure 610.
Then, the light propagates through the stripe-shaped optical waveguide made of and emits from the light emitting spot on the anti-reflection coating film 636. Further, the third laser beam is emitted from the striped optical waveguide formed of the active layer 612 of the first semiconductor laminated structure 610 and the second laser beam.
Of the active layer 622 of the semiconductor multilayer structure 620 of FIG. As a result, the second laser light and the third laser light are emitted from the same light emitting spot as the first laser light, so that three laser lights having different wavelengths are emitted from one light emitting spot. The device can be realized.

In the sixth embodiment, the center line of the stripe region of the active layer 612 of the first semiconductor multilayer structure 610, the center line of the stripe region of the active layer 622 of the second semiconductor multilayer structure 620, and Third semiconductor laminated structure 63
However, the center lines of the stripe regions of the active layer 632 coincide with each other, but instead of this, the first semiconductor laminated structure 6
The center line of the stripe region of the ten active layers 612 and the second
While the center line of the stripe region of the active layer 622 of the semiconductor multilayer structure 620 is offset vertically,
The center line of the stripe region of the active layer 632 of the semiconductor stacked structure 630 of FIG.
The center line of the twelve stripe regions or the center line of the stripe region of the active layer 622 of the second semiconductor multilayer structure 620 may be matched. This makes it possible to realize a three-wavelength semiconductor laser device in which three laser beams having different wavelengths are emitted from two light emitting spots located in the vertical direction.

Hereinafter, a method of manufacturing the semiconductor laser device according to the sixth embodiment will be described with reference to FIGS.
This will be described with reference to FIG.

First, as shown in FIG. 18, a chip-shaped first semiconductor laminated structure 610 (first laser chip) having a non-reflective coating film 636 formed on the front end face, and a chip-shaped second semiconductor chip Laminated structure 620 (second laser chip)
And a chip-shaped third semiconductor laminated structure 630 (third laser chip) having a high-reflection coating film 637 formed on the rear end face thereof are subjected to fine processing such as an epitaxial growth method such as MOVPE, a lithography method, and an etching method. It is manufactured by using the method.

Next, as shown in FIG.
The first semiconductor laminated structure 610 is fixed to a region on the front side of the first semiconductor layer 00 with a solder material or the like.

Next, as shown in FIG.
The second semiconductor laminated structure 620 is fixed to a region (center region) on the back side of the first semiconductor laminated structure 610 by a solder material or the like at an interval between the first semiconductor laminated structure 610 and the first semiconductor laminated structure 610. . In this case, the center line of the stripe region of the active layer 612 of the first semiconductor multilayer structure 610 and the center line of the stripe region of the active layer 622 of the second semiconductor multilayer structure 620 are aligned.

Next, as shown in FIG.
The third semiconductor laminated structure 630 is fixed to a region on the rear side of the second semiconductor laminated structure 620 with a solder material or the like at an interval between the second semiconductor laminated structure 620 and the second semiconductor laminated structure 620. In this case, the center line of the stripe region of the active layer 622 of the second semiconductor multilayer structure 620 is aligned with the center line of the stripe region of the active layer 632 of the third semiconductor multilayer structure 630.

The first semiconductor laminated structure 610 is fixed to a front region on the substrate 600, the second semiconductor laminated structure 620 is fixed to a central region on the substrate 600, and the rear side The order in which the first, second, and third semiconductor laminated structures 610, 620, and 630 are fixed is not limited as long as the third semiconductor laminated structure 630 is fixed to the region.

Next, as shown in FIG. 20, a first dielectric member 638 is filled between the first semiconductor laminated structure 610 and the second semiconductor laminated structure 620 on the substrate 600, and the substrate 600 A second dielectric member 639 is filled between the second semiconductor stacked structure 620 and the third semiconductor stacked structure 630 above.

[0178]

According to the semiconductor laser device of the present invention, the first and second laser beams having different wavelengths are supplied to one of the front end faces of the first semiconductor laminated structure provided in the front region. Since the light can be emitted from the light emitting spot or two light emitting spots that are very close to each other, a plurality of laser lights having different wavelengths can be surely focused on a minute spot on the optical disk and can be detected by one photodetector.

According to the first or second method of manufacturing a semiconductor laser device according to the present invention, the first region is formed in the front region on the substrate.
A first semiconductor laminated structure for oscillating the second laser light is provided in a rear region on the substrate, and a first semiconductor laminated structure for oscillating the second laser light is provided. It is possible to reliably manufacture a monolithic semiconductor laser device in which the emission direction of the laser beam is the same as the emission direction of the second laser light.

According to the third method for manufacturing a semiconductor laser device of the present invention, the first laser chip for oscillating the first laser beam is provided in the front region on the substrate and the rear laser chip on the substrate is provided. A second laser chip for oscillating the second laser light is provided in the region, and a two-wavelength hybrid type in which the emission direction of the first laser light and the emission direction of the second laser light are the same. The semiconductor laser device can be manufactured reliably.

According to the fourth method for manufacturing a semiconductor laser device of the present invention, the first laser chip for oscillating the first laser beam is provided in the front region on the substrate, and the central region on the substrate is provided. A second laser chip for oscillating the second laser light is provided, and a third laser chip for oscillating the third laser light is provided in a rear region on the substrate; A hybrid three-wavelength semiconductor laser device in which the light emission direction, the second laser light emission direction, and the third laser light emission direction are the same can be reliably manufactured.

[Brief description of the drawings]

FIG. 1 is a perspective view of a semiconductor laser device according to a first embodiment.

FIG. 2 is a sectional view of the semiconductor laser device according to the first embodiment, taken along line II-II in FIG.

FIG. 3 is a sectional view of a semiconductor laser device according to a second embodiment.

FIG. 4 is a perspective view of a semiconductor laser device according to a third embodiment.

FIG. 5 is a sectional view of the semiconductor laser device according to the third embodiment, taken along line VV in FIG. 4;

FIGS. 6A and 6B show one step of a method for manufacturing a semiconductor laser device according to a third embodiment, wherein FIG. 6A is a perspective view, and FIG. 6B is a view showing VIb in FIG. It is sectional drawing of the -VIb line.

FIGS. 7A and 7B show a step of a method for manufacturing a semiconductor laser device according to a third embodiment, in which FIG. 7A is a perspective view, and FIG. 7B is a VIIb in FIG. It is sectional drawing of the -VIIb line.

FIGS. 8A and 8B show one step of a method for manufacturing a semiconductor laser device according to a third embodiment, in which FIG. 8A is a perspective view and FIG. 8B is a view showing VIIIb in FIG. -VIIIb
It is sectional drawing of a line.

FIGS. 9A and 9B show one step of a method for manufacturing a semiconductor laser device according to the third embodiment, wherein FIG. 9A is a perspective view and FIG. 9B is a view showing IXb in FIG. It is sectional drawing of the -IXb line.

FIGS. 10A and 10B show one step of a method for manufacturing a semiconductor laser device according to a third embodiment, in which FIG. 10A is a perspective view, and FIG. 10B is a view showing Xb in FIG. It is sectional drawing of the -Xb line.

FIGS. 11A and 11B show one step of a method for manufacturing a semiconductor laser device according to a third embodiment, in which FIG. 11A is a perspective view, and FIG. 11B is a view showing XIb in FIG. -XIb
It is sectional drawing of a line.

FIG. 12 is a perspective view of a semiconductor laser device according to a first modification of the third embodiment.

FIG. 13 shows a semiconductor laser device according to a first modification of the third embodiment, and is a cross-sectional view taken along line XIII-XIII in FIG.

14A and 14B show a semiconductor laser device according to a second modification of the third embodiment, FIG. 14A is a perspective view, and FIG. 14B is a view showing XIVb-XIVb in FIG. It is sectional drawing of a line.

FIGS. 15A and 15B show a semiconductor laser device according to a fourth embodiment, FIG. 15A is a perspective view, and FIG.
FIG. 4 is a cross-sectional view taken along line XVb-XVb in FIG.

16A and 16B show a semiconductor laser device according to a fifth embodiment, where FIG. 16A is a perspective view, and FIG.
FIG. 6 is a cross-sectional view taken along line XVIb-XVIb in FIG.

FIG. 17 is a perspective view of a semiconductor laser device according to a modification of the fifth embodiment.

FIG. 18 is a sectional view of a semiconductor laser device according to a sixth embodiment.

FIGS. 19A to 19C are perspective views showing steps of a method for manufacturing a semiconductor laser device according to a sixth embodiment.

FIG. 20 is a perspective view showing one step of a method for manufacturing a semiconductor laser device according to the sixth embodiment.

FIG. 21 is a perspective view showing an example of a monolithic semiconductor laser device which is a conventional semiconductor laser device.

[Explanation of symbols]

 Reference Signs List 100 n-type GaAs substrate 110 first semiconductor laminated structure 111 n-type cladding layer 112 active layer 112 a stripe region 113 p-type first cladding layer 114 current blocking layer 115 p-type second cladding layer 116 contact layer 117 first p-type electrode 120 second semiconductor laminated structure 121 n-type cladding layer 122 active layer 122a stripe region 123 p-type first cladding layer 124 current blocking layer 125 p-type second cladding layer 126 contact layer 127 second p-type electrode 131 front cleavage plane 132 rear cleavage plane 133 n-type electrode 134 groove 135 boundary surface 136 antireflection coating layer 137 high reflection coating layer 200 n-type GaAs substrate 210 first semiconductor laminated structure 211 active layer 220 second semiconductor Stacked structure 221 Active layer Reference Signs List 30 third semiconductor laminated structure 231 active layer 241 front cleavage plane 242 rear cleavage plane 243 antireflection coating layer 244 high reflection coating layer 245 first boundary surface 246 second boundary surface 300 n-type GaAs substrate 310 first semiconductor Laminated structure 311 n-type cladding layer 312 active layer 312a stripe region 313 p-type first cladding layer 314 current blocking layer 315 p-type second cladding layer 316 contact layer 317 first p-type electrode 320 second semiconductor lamination Structure 321 n-type cladding layer 322 active layer 322a stripe region 323 p-type first cladding layer 324 current blocking layer 325 p-type second cladding layer 326 contact layer 327 second p-type electrode 331 forward cleavage plane 332 rear cleavage plane 333 n-type electrode 334 groove 334A Groove portion 335 Boundary surface 336 Non-reflective coating layer 337 Highly reflective coating layer 338 Side wall growth portion 340 First provisional semiconductor laminated structure 350 Second provisional semiconductor laminated structure 400 n-type GaAs substrate 410 First semiconductor laminated structure 411 n-type cladding Layer 412 Active layer 412a Stripe region 413 First p-type cladding layer 414 Current blocking layer 415 Second p-type cladding layer 416 Contact layer 417 First p-type electrode 420 Second semiconductor multilayer structure 421 N-type cladding layer 422 Active layer 422a Stripe region 423 First p-type cladding layer 424 Current blocking layer 425 Second p-type cladding layer 426 Contact layer 427 Second p-type electrode 431 Front cleavage plane 432 Rear cleavage plane 433 N-type electrode 436 Non-reflective Coating film 437 High reflection core Film 500 substrate 510 first semiconductor laminated structure 512 active layer 520 second semiconductor laminated structure 522 active layer 534 void 536 antireflection coating film 537 high reflection coating film 538 first end face coating film 539 second end face coating Film 600 Substrate 610 First semiconductor laminated structure 612 Active layer 620 Second semiconductor laminated structure 622 Active layer 630 Third semiconductor laminated structure 632 Active layer 636 Non-reflective coating film 637 Post-reflective coating film 638 First dielectric member 639 Second dielectric member

Claims (23)

[Claims] A first region provided on a front side of the substrate;
A first semiconductor laminated structure having a first active layer that oscillates a first laser beam having a second wavelength band, and a second semiconductor layer structure provided in a rear region on the substrate and having a second wavelength band. A second semiconductor laminated structure having a second active layer for oscillating laser light, wherein the emission direction of the first laser light and the emission direction of the second laser light are the same. Semiconductor laser device. 2. The semiconductor laser device according to claim 1, wherein the emission direction of the first laser light and the emission direction of the second laser light are on the same straight line. 3. The semiconductor laser device according to claim 1, wherein the emission direction of the second laser light is located above or below the emission direction of the first laser light. 4. The semiconductor device according to claim 2, wherein an energy gap of the semiconductor layer facing a rear end face of the first active layer in the second semiconductor multilayer structure is larger than an energy gap of the first active layer. The semiconductor laser device according to claim 3. 5. The first semiconductor laminated structure includes a first clad layer located between the substrate and the first active layer, and a second clad layer located above the first active layer. A second clad layer, wherein the second semiconductor laminated structure has a third clad layer located between the substrate and the second active layer, and a third clad layer located above the second active layer. And the composition of the first cladding layer and the composition of the third cladding layer are the same, or the composition of the second cladding layer and the composition of the fourth cladding layer. 4. The semiconductor laser device according to claim 3, wherein the composition is the same. 6. The semiconductor laser device according to claim 1, wherein an energy gap of the first active layer is larger than an energy gap of the second active layer. 7. The semiconductor laser device according to claim 1, wherein the first active layer contains indium and phosphorus, and the second active layer contains gallium and arsenic. 8. An anti-reflection coating layer is provided on a front end face of the first semiconductor laminated structure, and a high reflection coating layer is provided on a rear end face of the second semiconductor laminated structure. The semiconductor laser device according to claim 1. 9. The semiconductor device according to claim 1, further comprising a dielectric member between a rear end surface of the first semiconductor laminated structure and a front end surface of the second semiconductor laminated structure, wherein the dielectric member is provided on the first active layer. 2. The semiconductor laser device according to claim 1, wherein the semiconductor laser device has a refractive index between an effective refractive index of the stripe region and an effective refractive index of the stripe region of the second active layer. 10. A first semiconductor laminated structure having a first active layer provided in a front region on a substrate and oscillating a first laser beam having a first wavelength band, and a first semiconductor laminated structure on the substrate. A second semiconductor laminated structure having a second active layer provided in a rear region and oscillating a second laser beam having a second wavelength band. Growing a first temporary semiconductor multilayer structure having the same multilayer structure as the second semiconductor multilayer structure over the entire surface of the substrate; removing a front portion of the first temporary semiconductor multilayer structure; A step of forming the second semiconductor multilayer structure in a rear region on the substrate; and a step of forming the entire second surface on the front region and the second semiconductor multilayer structure on the substrate. It has the same laminated structure as the first semiconductor laminated structure Growing a second provisional semiconductor laminated structure, and removing a portion of the second provisional semiconductor laminated structure above the second semiconductor laminated structure, thereby forming a region on the front side on the substrate. Forming the first semiconductor laminated structure. 11. A first semiconductor laminated structure having a first active layer provided in a front region on a substrate and oscillating a first laser beam having a first wavelength band, and a first semiconductor laminated structure on the substrate. A second semiconductor laminated structure having a second active layer provided in a rear region and oscillating a second laser beam having a second wavelength band. Growing a first temporary semiconductor multilayer structure having the same multilayer structure as the first semiconductor multilayer structure over the entire surface of the substrate; removing a rear portion of the first temporary semiconductor multilayer structure; A step of forming the first semiconductor laminated structure in a front region on the substrate; and a step of forming the first semiconductor laminated structure over the rear region and the first semiconductor laminated structure on the substrate. Has the same laminated structure as the second semiconductor laminated structure Growing a second provisional semiconductor laminated structure, and removing a portion of the second provisional semiconductor laminated structure above the first semiconductor laminated structure, thereby forming a region on the rear side of the substrate. Forming the second semiconductor laminated structure. 12. A first laser chip having a first active layer that oscillates a first laser beam having a first wavelength band, and a first laser chip that oscillates a second laser beam having a second wavelength band. A first step of forming a second laser chip having two active layers, respectively, fixing the first laser chip in a front region on the substrate, and forming a second laser chip in a rear region on the substrate. And a second step of fixing the second laser chip. The second step is such that an emission direction of the first laser light and an emission direction of the second laser light are in the same direction. To
A method for manufacturing a semiconductor laser device, comprising a step of fixing the first laser chip and the second laser chip. 13. The semiconductor according to claim 10, wherein the emission direction of the first laser light and the emission direction of the second laser light are on the same straight line. A method for manufacturing a laser device. 14. The device according to claim 10, wherein an emission direction of the second laser light is located above or below an emission direction of the first laser light. 3. The method for manufacturing a semiconductor laser device according to item 1. 15. The semiconductor laser device according to claim 10, wherein an energy gap of the first active layer is larger than an energy gap of the second active layer. Production method. 16. The semiconductor laser according to claim 10, wherein the first active layer contains indium and phosphorus, and the second active layer contains gallium and arsenic. Device manufacturing method. 17. The method according to claim 17, further comprising: forming a non-reflective coating layer on a front end face of the first semiconductor laminated structure; and forming a highly reflective coating layer on a rear end face of the second semiconductor laminated structure. The method of manufacturing a semiconductor laser device according to claim 10, wherein: 18. The effective refraction of a stripe region of the first active layer between a rear end surface of the first laser chip and a front end surface of the second laser chip after the second step. 2. The method of claim 1, further comprising the step of filling a dielectric member having a refractive index between the refractive index and an effective refractive index of the stripe region of the second active layer.
13. The method for manufacturing a semiconductor laser device according to any one of 0 to 12. 19. A first laser chip having a first active layer that oscillates a first laser beam having a first wavelength band, and a first laser chip that oscillates a second laser beam having a second wavelength band. A first step of forming a second laser chip having a second active layer and a third laser chip having a third active layer for oscillating a third laser beam having a third wavelength band; Fixing the first laser chip in a front region on the substrate, fixing the second laser chip in a central region on the substrate, and setting the third laser chip in a rear region on the substrate. A second step of fixing a laser chip, wherein the second step includes: an emission direction of the first laser light, an emission direction of the second laser light, and an emission direction of the third laser light. The first laser chip and the second laser chip so that And a method of manufacturing a semiconductor laser device which comprises a step of fixing the third laser chip. 20. An emission direction of the third laser light, wherein the emission direction of the first laser light or the emission direction of the second laser light is on the same straight line.
10. The method for manufacturing a semiconductor laser device according to item 9. 21. An energy gap of the first active layer is larger than an energy gap of the second active layer, and an energy gap of the second active layer is larger than an energy gap of the third active layer. A method for manufacturing a semiconductor laser device, comprising: 22. The first active layer includes gallium and nitrogen, the second active layer includes indium and phosphorus, and the third active layer includes gallium and arsenic. 20. The method for manufacturing a semiconductor laser device according to item 19. 23. An effective refraction of a stripe region of the first active layer between a rear end surface of the first laser chip and a front end surface of the second laser chip after the second step. Filling a first dielectric member having a refractive index between the refractive index and an effective refractive index of the stripe region of the second active layer; and a rear end face of the second laser chip and the third dielectric member. A second dielectric layer having a refractive index between the effective refractive index of the stripe region of the second active layer and the effective refractive index of the stripe region of the third active layer between the front end surface of the laser chip and the laser diode; 20. The method according to claim 19, further comprising a step of filling a body member.