JP2001347500A - Manufacturing method of micromachine - Google Patents
Manufacturing method of micromachineInfo
- Publication number
- JP2001347500A JP2001347500A JP2000168790A JP2000168790A JP2001347500A JP 2001347500 A JP2001347500 A JP 2001347500A JP 2000168790 A JP2000168790 A JP 2000168790A JP 2000168790 A JP2000168790 A JP 2000168790A JP 2001347500 A JP2001347500 A JP 2001347500A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- amorphous
- sacrificial layer
- plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 229910018104 Ni-P Inorganic materials 0.000 claims abstract description 16
- 229910018536 Ni—P Inorganic materials 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 16
- 239000010949 copper Substances 0.000 claims abstract description 13
- 238000007772 electroless plating Methods 0.000 claims abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052802 copper Inorganic materials 0.000 claims abstract description 8
- 238000007747 plating Methods 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 7
- 239000005300 metallic glass Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 abstract description 26
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 6
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Micromachines (AREA)
- Chemically Coating (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、表面マイクロマ
シニング技術を用いたマイクロマシンの作製方法に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a micromachine using a surface micromachining technique.
【０００２】[0002]
【従来の技術】近年、微細な構造体を形成して静電スイ
ッチやセンサなどを作製するために、マイクロマシン技
術の開発が精力的に行われている。代表的な構造である
多結晶シリコンを構造体に用いたマイクロマシンは、シ
リコン集積回路の作製工程を基にした工程で作製され
る。そのため、プロセス温度が高くシリコン（Ｓｉ）な
どの耐熱性の有る基板しか使えない、段差が大きい構造
体が作れないなどの欠点が有る。この欠点を補うため、
例えば、次のように構造体が提案されている。（１）樹
脂製支柱とアルミ薄膜を組み合わせた構造体（John N.
Randall,Chuck Goldsmith et.al,J.Vac,Sci,technol.B/
4(6),p.3692 〜3696(1996)）。（２）Ｎｉメッキを用い
た構造体（Paul M.Zavracy,Nicol E.McGruer et.al,Pro
c.Sens.Eypo.Detroit.p.293 〜298(1997) ）。しかし、
構造体の強度の点で問題が有る。2. Description of the Related Art In recent years, micromachine technology has been energetically developed in order to form an electrostatic switch or a sensor by forming a fine structure. A micromachine using polycrystalline silicon as a structure, which is a typical structure, is manufactured by a process based on a manufacturing process of a silicon integrated circuit. Therefore, there are disadvantages such as that only a substrate having a high process temperature such as silicon (Si) having heat resistance can be used, and a structure having a large step cannot be formed. To make up for this shortcoming,
For example, a structure has been proposed as follows. (1) A structure combining resin columns and aluminum thin film (John N.
Randall, Chuck Goldsmith et.al, J. Vac, Sci, technol.B /
4 (6), p.3692-3696 (1996)). (2) Structure using Ni plating (Paul M. Zavracy, Nicol E. McGruer et.al, Pro
c. Sens. Eypo. Detroit. p. 293-298 (1997)). But,
There is a problem in the strength of the structure.
【０００３】[0003]
【発明が解決しようとする課題】この発明は上記のよう
な背景の下になされたものであり、その目的は、新規な
手法により、基板の選択の自由度を増し、安価な基板の
使用を可能にするとともに、段差の大きな構造体の作製
を可能にするマイクロマシンの作製方法を提供すること
にある。SUMMARY OF THE INVENTION The present invention has been made in view of the above background, and an object of the present invention is to increase the degree of freedom in selecting a substrate by using a novel technique and to use an inexpensive substrate. It is another object of the present invention to provide a method for manufacturing a micromachine that enables a structure having a large step to be made possible.
【０００４】[0004]
【課題を解決するための手段】請求項１に記載のマイク
ロマシンの作製方法によれば、基板の上に犠牲層が形成
され、犠牲層上を含む基板上に無電解メッキ法によりア
モルファス金属膜が堆積される。そして、犠牲層をエッ
チングにより除去してアモルファス金属膜が梁構造にさ
れる。According to the first aspect of the present invention, a sacrifice layer is formed on a substrate, and an amorphous metal film is formed on the substrate including the sacrifice layer by electroless plating. Is deposited. Then, the sacrificial layer is removed by etching, so that the amorphous metal film has a beam structure.
【０００５】このように、無電解メッキを利用して、常
温で犠牲層上にアモルファス金属膜を堆積することで、
段差の大きい場所でも段切れすることなく、機械強度の
優れた構造体を形成することができる。その結果、基板
の選択の自由度を増し、安価な基板の使用を可能にする
とともに、段差の大きな構造体の作製が可能となる。As described above, by depositing an amorphous metal film on a sacrificial layer at room temperature using electroless plating,
A structure having excellent mechanical strength can be formed without breakage even in a place having a large step. As a result, the degree of freedom in selecting a substrate is increased, an inexpensive substrate can be used, and a structure having a large step can be manufactured.
【０００６】ここで、請求項２に記載のように、無電解
メッキとして、無電解Ｎｉ−Ｐメッキを用いると、実用
上好ましい。この際、請求項３に記載のように、犠牲層
として、導電性を有するもの、特に、請求項４に記載の
ように銅膜を用いると、実用上好ましいものとなる。Here, it is practically preferable to use electroless Ni-P plating as the electroless plating. At this time, it is practically preferable to use a conductive film as the sacrificial layer, particularly, a copper film as described in claim 4.
【０００７】[0007]
【発明の実施の形態】以下、この発明を具体化した実施
の形態を図面に従って説明する。本実施形態においては
ミリ波集積回路の一部をなす静電スイッチ（詳しくは、
容量結合型静電スイッチ）に具体化している。図１に
は、本実施形態における静電スイッチの斜視図を示す。
また、図２には静電スイッチの平面図を示す。さらに、
図２のＡ−Ａ線での縦断面を図３に示す。Embodiments of the present invention will be described below with reference to the drawings. In the present embodiment, an electrostatic switch (particularly, a part of a millimeter wave integrated circuit)
(A capacitive coupling type electrostatic switch). FIG. 1 is a perspective view of the electrostatic switch according to the present embodiment.
FIG. 2 is a plan view of the electrostatic switch. further,
FIG. 3 shows a vertical section taken along line AA in FIG.
【０００８】基板１には高抵抗シリコン基板が用いられ
ており、その抵抗値は１０００Ωｃｍ以上である。高抵
抗シリコン基板１の上には導体２，３，４が延設され、
コプレーナウェーブガイドを構成している。つまり、基
板１の上にグランド用導体３，４が延設されるととも
に、グランド用導体３，４の間に伝送線路２が延びてい
る。導体２〜４はＡｕ／Ｔｉよりなる。なお、基板１上
の導体２〜４の無い領域には絶縁層５が形成され、絶縁
層５はシリコン酸化膜（ＳｉＯ2 ）よりなる。その線路
の途中において、導体２，３，４の上に絶縁層６が形成
され、絶縁層６はシリコン窒化膜（Ｓｉ3 Ｎ4 ）よりな
る。絶縁層６の上には空隙７を介して梁構造のスイッチ
用導体８が配置されている。スイッチ用導体８にはアモ
ルファス金属であるアモルファスＮｉ−Ｐが用いられて
いる。A high-resistance silicon substrate is used as the substrate 1 and its resistance value is 1000 Ωcm or more. Conductors 2, 3, and 4 are extended on the high-resistance silicon substrate 1,
It constitutes a coplanar waveguide. That is, the ground conductors 3 and 4 extend on the substrate 1, and the transmission line 2 extends between the ground conductors 3 and 4. The conductors 2 to 4 are made of Au / Ti. Note that an insulating layer 5 is formed in a region on the substrate 1 where the conductors 2 to 4 do not exist, and the insulating layer 5 is made of a silicon oxide film (SiO 2 ). In the middle of the line, an insulating layer 6 is formed on the conductors 2, 3, and 4, and the insulating layer 6 is made of a silicon nitride film (Si 3 N 4 ). A switching conductor 8 having a beam structure is arranged on the insulating layer 6 via a gap 7. The switch conductor 8 is made of amorphous Ni-P, which is an amorphous metal.
【０００９】梁構造のスイッチ用導体８は、平面形状と
して、図２に示すように、４つのアンカー部９ａ，９
ｂ，９ｃ，９ｄを有し、そのアンカー部９ａ，９ｂ，９
ｃ，９ｄから梁１０ａ，１０ｂ，１０ｃ，１０ｄが延
び、長方形部（対向電極部）１１につながっている。長
方形部１１は線路用導体２，３，４の上に位置してい
る。アンカー部９ａ，９ｂは制御電極１２ａの上に固定
されるとともに、アンカー部９ｃ，９ｄは制御電極１２
ｂの上に固定されている。制御電極１２ａ，１２ｂはＡ
ｕ／Ｔｉよりなる。図３に示すように、スイッチ用導体
８とグランド用導体３，４との間には容量Ｃ１，Ｃ２が
形成されるとともに、スイッチ用導体８と伝送線路２と
の間には容量Ｃ３が形成されている。As shown in FIG. 2, the switch conductor 8 having a beam structure has four anchor portions 9a and 9 as shown in FIG.
b, 9c, 9d, and their anchor portions 9a, 9b, 9
Beams 10a, 10b, 10c, and 10d extend from c and 9d, and are connected to a rectangular portion (opposite electrode portion) 11. The rectangular portion 11 is located on the line conductors 2, 3, and 4. The anchors 9a and 9b are fixed on the control electrode 12a, and the anchors 9c and 9d are fixed on the control electrode 12a.
b. The control electrodes 12a and 12b are A
u / Ti. As shown in FIG. 3, capacitors C1 and C2 are formed between the switch conductor 8 and the ground conductors 3 and 4, and a capacitor C3 is formed between the switch conductor 8 and the transmission line 2. Have been.
【００１０】そして、制御電極１２ａ，１２ｂに電圧が
印加されない状態では、スイッチ用導体８の長方形部
（対向電極部）１１とグランド用導体３，４および伝送
線路２とは所定の間隔に保持されている。この状態では
線路をミリ波が伝送していく。一方、この状態から制御
電極１２ａ，１２ｂに交流電圧が印加されると、スイッ
チ用導体８の長方形部１１が基板１側に引き寄せられ、
図４に示すように、スイッチ用導体８の長方形部１１と
グランド用導体３，４の距離、および、長方形部１１と
伝送線路２の距離が小さくなり（容量Ｃ１，Ｃ２，Ｃ３
が減少して）、伝送線路２とグランド用導体３，４の間
が高周波に対して短絡されるため線路が終端される。そ
のため、伝送線路２を伝送してきたミリ波は当該箇所で
反射する。このように、ミリ波の通過を許容／遮断する
スイッチとして機能する。When no voltage is applied to the control electrodes 12a, 12b, the rectangular portion (opposite electrode portion) 11 of the switch conductor 8, the ground conductors 3, 4, and the transmission line 2 are held at predetermined intervals. ing. In this state, millimeter waves are transmitted through the line. On the other hand, when an AC voltage is applied to the control electrodes 12a and 12b from this state, the rectangular portion 11 of the switch conductor 8 is drawn toward the substrate 1, and
As shown in FIG. 4, the distance between the rectangular portion 11 of the switch conductor 8 and the ground conductors 3 and 4 and the distance between the rectangular portion 11 and the transmission line 2 are reduced (capacitances C1, C2, and C3).
Is reduced), and the line is terminated because the transmission line 2 and the ground conductors 3 and 4 are short-circuited to a high frequency. Therefore, the millimeter wave transmitted through the transmission line 2 is reflected at the corresponding location. In this way, it functions as a switch that allows / blocks the passage of the millimeter wave.
【００１１】次に、この容量結合型静電スイッチを作製
する工程について、図５および図３を用いて説明する。
まず、図５（ａ）に示すように、高抵抗シリコン基板１
を用意する。そして、高抵抗シリコン基板１上に、絶縁
層であるシリコン酸化膜（ＳｉＯ2 ）５と線路用導体や
制御電極となるＡｕ／Ｔｉ膜（２，３，４，１２ａ，１
２ｂ）をフォトリソグラフィにより形成する。Next, a process of manufacturing the capacitive coupling type electrostatic switch will be described with reference to FIGS.
First, as shown in FIG.
Prepare Then, on the high-resistance silicon substrate 1, a silicon oxide film (SiO 2 ) 5 as an insulating layer and an Au / Ti film (2, 3, 4, 12a, 1) serving as a line conductor or a control electrode are formed.
2b) is formed by photolithography.
【００１２】さらに、図５（ｂ）に示すように、高抵抗
シリコン基板１上におけるシリコン酸化膜５およびＡｕ
／Ｔｉ膜（２，３，４，１２ａ，１２ｂ）の上に絶縁層
となるシリコン窒化膜（Ｓｉ3 Ｎ4 ）６を堆積し、パタ
ーニングする。Further, as shown in FIG. 5B, a silicon oxide film 5 and Au on the high resistance silicon substrate 1 are formed.
A silicon nitride film (Si 3 N 4 ) 6 serving as an insulating layer is deposited on the / Ti film (2, 3, 4 , 12a, 12b) and patterned.
【００１３】その後、図５（ｃ）に示すように、基板１
の上に、犠牲層となる銅膜２０を形成し、さらに、銅膜
２０に対し構造体のアンカー部となる箇所２１を開口す
る。引き続き、図５（ｄ）に示すように、フォトレジス
ト２２をパターニングする。そして、無電解メッキによ
り基板１上にアモルファスＮｉ−Ｐ膜８を堆積する。つ
まり、基板１上におけるフォトレジスト２２から露出し
た部位（Ｃｕ犠牲層２０の上およびアンカー部となる箇
所２１）に対しアモルファスＮｉ−Ｐ膜８を堆積する。
この無電解Ｎｉ−Ｐメッキを行うときの温度は約９０℃
である。[0013] Thereafter, as shown in FIG.
A copper film 20 serving as a sacrifice layer is formed on the substrate, and a portion 21 serving as an anchor portion of the structure is opened in the copper film 20. Subsequently, as shown in FIG. 5D, the photoresist 22 is patterned. Then, an amorphous Ni-P film 8 is deposited on the substrate 1 by electroless plating. That is, the amorphous Ni-P film 8 is deposited on the portion of the substrate 1 exposed from the photoresist 22 (on the Cu sacrificial layer 20 and the portion 21 serving as the anchor portion).
The temperature when performing this electroless Ni-P plating is about 90 ° C.
It is.
【００１４】その後、フォトレジスト２２を除去した
後、Ｃｕ犠牲層２０をエッチングにて除去する。エッチ
ング液には、塩化アンモン第２銅とアンモニアの混合物
を用いる。その結果、図３に示すように、スイッチ用導
体（アモルファスＮｉ−Ｐ膜）８と線路用導体（Ａｕ／
Ｔｉ）２，３，４との間に空隙７が形成され、スイッチ
用導体８の梁１０ａ〜１０ｄと長方形部（対向電極部）
１１が基板１側から分離する。このように犠牲層エッチ
ングにてアモルファスＮｉ−Ｐ膜８を梁構造にして、静
電スイッチの作製が完了する。Thereafter, after removing the photoresist 22, the Cu sacrificial layer 20 is removed by etching. As an etching solution, a mixture of cupric ammonium chloride and ammonia is used. As a result, as shown in FIG. 3, the switch conductor (amorphous Ni-P film) 8 and the line conductor (Au /
A gap 7 is formed between Ti) 2, 3, and 4, and beams 10a to 10d of the switch conductor 8 and a rectangular portion (a counter electrode portion)
11 is separated from the substrate 1 side. In this way, the fabrication of the electrostatic switch is completed by making the amorphous Ni-P film 8 into a beam structure by the sacrifice layer etching.
【００１５】以上のように、無電解Ｎｉ−Ｐメッキによ
り、常温（０〜１００℃）で機械強度の優れたアモルフ
ァス金属の堆積が可能であることを利用して、シリコン
集積回路の作製工程のような高温（例えば、１０００
℃）の工程を用いることなく構造体の形成が可能にな
る。それ故、基板の選択の自由度を増し、安価な基板の
使用を可能にすると共に、メッキのステップカバレッジ
を利用し、段差の大きな構造体を作製することが可能と
なる。As described above, by utilizing the fact that amorphous metal having excellent mechanical strength can be deposited at room temperature (0 to 100 ° C.) by electroless Ni—P plating, a process for manufacturing a silicon integrated circuit can be performed. Such high temperature (for example, 1000
C) can be formed without using the step (C). Therefore, the degree of freedom in selecting a substrate can be increased, an inexpensive substrate can be used, and a structure having a large step can be manufactured by utilizing plating step coverage.
【００１６】より具体的には、ガラス基板は耐熱温度が
５００℃以下であり、プラスチック基板（樹脂基板）は
耐熱温度が１５０℃程度である。このような安価な基板
を使用することが可能となる。More specifically, a glass substrate has a heat resistant temperature of 500 ° C. or less, and a plastic substrate (resin substrate) has a heat resistant temperature of about 150 ° C. Such an inexpensive substrate can be used.
【００１７】このように、本実施の形態は下記の特徴を
有する。 （イ）マイクロマシンの作製方法として、図５（ｃ）に
示すように、基板１の上に、導電性を有する犠牲層とし
ての銅膜２０を形成する工程と、図５（ｄ）に示すよう
に、Ｃｕ犠牲層２０上を含む基板１上に無電解メッキ法
（無電解Ｎｉ−Ｐメッキ）によりアモルファス金属膜で
あるアモルファスＮｉ−Ｐ膜８を堆積する工程と、Ｃｕ
犠牲層２０をエッチングにより除去して、図３に示すよ
うに、アモルファスＮｉ−Ｐ膜８を梁構造にする工程
と、を備えた。このように、無電解メッキを利用して、
常温でＣｕ犠牲層２０上にアモルファスＮｉ−Ｐ膜８を
堆積することで、段差の大きい場所でも段切れすること
なく、機械強度の優れた構造体を形成することができ
る。その結果、基板の選択の自由度を増し、安価な基板
の使用を可能にするとともに、段差の大きな構造体の作
製が可能となる。As described above, this embodiment has the following features. (A) As a method for manufacturing a micromachine, as shown in FIG. 5C, a step of forming a copper film 20 as a sacrificial layer having conductivity on the substrate 1 and a step of forming a copper film as shown in FIG. Depositing an amorphous Ni-P film 8 as an amorphous metal film on the substrate 1 including the Cu sacrificial layer 20 by an electroless plating method (electroless Ni-P plating);
And removing the sacrificial layer 20 by etching to form the amorphous Ni-P film 8 into a beam structure as shown in FIG. In this way, using electroless plating,
By depositing the amorphous Ni-P film 8 on the Cu sacrificial layer 20 at normal temperature, a structure having excellent mechanical strength can be formed without breaking even in a place having a large step. As a result, the degree of freedom in selecting a substrate is increased, an inexpensive substrate can be used, and a structure having a large step can be manufactured.
【００１８】なお、本発明のマイクロマシンの具体的用
途として、微細な構造体を有する静電スイッチの他に
も、アクチュエータ、センサなどを挙げることができ
る。また、アモルファス金属として、アモルファスＮｉ
−Ｐを用いたが、他のアモルファス金属、例えばＮｉ−
Ｂ等を使用してもよい。As a specific application of the micromachine of the present invention, an actuator, a sensor, and the like can be given in addition to an electrostatic switch having a fine structure. As an amorphous metal, amorphous Ni
Although -P was used, other amorphous metals such as Ni-
B or the like may be used.
【図１】 実施の形態における容量結合型静電スイッチ
の斜視図。FIG. 1 is a perspective view of a capacitive coupling type electrostatic switch according to an embodiment;
【図２】 容量結合型静電スイッチの平面図。FIG. 2 is a plan view of a capacitive coupling type electrostatic switch.
【図３】 図２のＡ−Ａ線での縦断面図。FIG. 3 is a longitudinal sectional view taken along line AA of FIG. 2;
【図４】 静電スイッチの動作説明図。FIG. 4 is an explanatory diagram of an operation of the electrostatic switch.
【図５】 静電スイッチを作製する工程説明図。FIG. 5 is a diagram illustrating a process of manufacturing an electrostatic switch.
１…高抵抗シリコン基板、２，３，４…導体、５…絶縁
層、６…絶縁層、７…空隙、８…スイッチ用導体、２０
…犠牲層となる銅膜。DESCRIPTION OF SYMBOLS 1 ... High resistance silicon substrate, 2, 3, 4 ... Conductor, 5 ... Insulating layer, 6 ... Insulating layer, 7 ... Air gap, 8 ... Switch conductor, 20
... A copper film to be a sacrificial layer.
フロントページの続き (72)発明者 筈見 浩史 愛知県刈谷市昭和町１丁目１番地 株式会 社デンソー内 Ｆターム(参考） 4K022 AA02 AA31 AA41 BA04 BA14 BA16 BA35 CA28 DA01 EA03 EA04 4K057 WA12 WB03 WC05 WE08 WE23 WN01 WN06 Continuing from the front page (72) Inventor Hiroshi Zumi 1-1-1 Showa-cho, Kariya-shi, Aichi F-term in DENSO Corporation (reference) 4K022 AA02 AA31 AA41 BA04 BA14 BA16 BA35 CA28 DA01 EA03 EA04 4K057 WA12 WB03 WC05 WE08 WE23 WN01 WN06
Claims (4)
アモルファス金属膜を堆積する工程と、 前記犠牲層をエッチングにより除去して前記アモルファ
ス金属膜を梁構造にする工程と、を備えたことを特徴と
するマイクロマシンの作製方法。A step of forming a sacrificial layer on the substrate, a step of depositing an amorphous metal film on the substrate including the sacrificial layer by electroless plating, and removing the sacrificial layer by etching. A step of forming the amorphous metal film into a beam structure.
ッキであることを特徴とする請求項１に記載のマイクロ
マシンの作製方法。2. The method according to claim 1, wherein the electroless plating is electroless Ni—P plating.
ることを特徴とする請求項１または２に記載のマイクロ
マシンの作製方法。3. The method according to claim 1, wherein the sacrificial layer has conductivity.
ることを特徴とする請求項３に記載のマイクロマシンの
作製方法。4. The method according to claim 3, wherein the conductive sacrificial layer is a copper film.
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|---|---|---|---|
| JP2000168790A JP2001347500A (en) | 2000-06-06 | 2000-06-06 | Manufacturing method of micromachine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000168790A JP2001347500A (en) | 2000-06-06 | 2000-06-06 | Manufacturing method of micromachine |
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|---|---|
| JP2001347500A true JP2001347500A (en) | 2001-12-18 |
Family
ID=18671746
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000168790A Pending JP2001347500A (en) | 2000-06-06 | 2000-06-06 | Manufacturing method of micromachine |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001347500A (en) |
Cited By (9)
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|---|---|---|---|---|
| JP2004172504A (en) * | 2002-11-21 | 2004-06-17 | Fujitsu Media Device Kk | Variable capacitor, package including the same, and method of manufacturing variable capacitor |
| US7189625B2 (en) | 2002-06-05 | 2007-03-13 | Nippon Telegraph And Telephone Corporation | Micromachine and manufacturing method |
| JP2007250848A (en) * | 2006-03-16 | 2007-09-27 | Casio Comput Co Ltd | Manufacturing method of three-dimensional wiring structure |
| US7402877B2 (en) | 2002-07-30 | 2008-07-22 | Sony Corporation | Micromachine and method of manufacturing the micromachine |
| US7411261B2 (en) | 2002-03-11 | 2008-08-12 | Samsung Electronics Co., Ltd. | MEMS device and fabrication method thereof |
| US7759591B2 (en) | 2005-12-15 | 2010-07-20 | Samsung Electronics Co., Ltd. | Pneumatic MEMS switch and method of fabricating the same |
| JP2011005600A (en) * | 2009-06-26 | 2011-01-13 | Fujitsu Ltd | Mems device and method for manufacturing the same |
| US8508003B2 (en) | 2009-04-24 | 2013-08-13 | Murata Manufacturing Co., Ltd. | MEMS element and method for manufacturing same |
| JP2016137565A (en) * | 2014-12-22 | 2016-08-04 | デルフメムズ エスエーエス | MEMS structure with thick movable film |
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| JPH01264618A (en) * | 1988-04-15 | 1989-10-20 | Seiko Epson Corp | Magnetic head manufacturing method |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7411261B2 (en) | 2002-03-11 | 2008-08-12 | Samsung Electronics Co., Ltd. | MEMS device and fabrication method thereof |
| US7189625B2 (en) | 2002-06-05 | 2007-03-13 | Nippon Telegraph And Telephone Corporation | Micromachine and manufacturing method |
| US7402877B2 (en) | 2002-07-30 | 2008-07-22 | Sony Corporation | Micromachine and method of manufacturing the micromachine |
| JP2004172504A (en) * | 2002-11-21 | 2004-06-17 | Fujitsu Media Device Kk | Variable capacitor, package including the same, and method of manufacturing variable capacitor |
| US7759591B2 (en) | 2005-12-15 | 2010-07-20 | Samsung Electronics Co., Ltd. | Pneumatic MEMS switch and method of fabricating the same |
| JP2007250848A (en) * | 2006-03-16 | 2007-09-27 | Casio Comput Co Ltd | Manufacturing method of three-dimensional wiring structure |
| US8508003B2 (en) | 2009-04-24 | 2013-08-13 | Murata Manufacturing Co., Ltd. | MEMS element and method for manufacturing same |
| JP2011005600A (en) * | 2009-06-26 | 2011-01-13 | Fujitsu Ltd | Mems device and method for manufacturing the same |
| JP2016137565A (en) * | 2014-12-22 | 2016-08-04 | デルフメムズ エスエーエス | MEMS structure with thick movable film |
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