JP2001342030A - Remelted quartz glass crucible and its manufacturing method - Google Patents
Remelted quartz glass crucible and its manufacturing methodInfo
- Publication number
- JP2001342030A JP2001342030A JP2000160737A JP2000160737A JP2001342030A JP 2001342030 A JP2001342030 A JP 2001342030A JP 2000160737 A JP2000160737 A JP 2000160737A JP 2000160737 A JP2000160737 A JP 2000160737A JP 2001342030 A JP2001342030 A JP 2001342030A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- quartz glass
- bright spot
- temperature
- glass crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 64
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000002344 surface layer Substances 0.000 claims abstract description 33
- 238000010438 heat treatment Methods 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims description 13
- 238000002844 melting Methods 0.000 claims description 12
- 239000010453 quartz Substances 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 238000005488 sandblasting Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 239000013078 crystal Substances 0.000 description 9
- 239000010410 layer Substances 0.000 description 9
- 239000000126 substance Substances 0.000 description 7
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 238000004031 devitrification Methods 0.000 description 5
- 239000000356 contaminant Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007664 blowing Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
- C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B29/00—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins
- C03B29/02—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins in a discontinuous way
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B32/00—Thermal after-treatment of glass products not provided for in groups C03B19/00, C03B25/00 - C03B31/00 or C03B37/00, e.g. crystallisation, eliminating gas inclusions or other impurities; Hot-pressing vitrified, non-porous, shaped glass products
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Glass Melting And Manufacturing (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、内表面に凹凸や汚
れがなく、かつ内表面層に微細気泡や異物を実質的に含
有しない高品質の石英ガラスルツボに関する。本発明の
石英ガラスルツボはシリコン単結晶引き上げ用のルツボ
として好適である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-quality quartz glass crucible free from irregularities and dirt on the inner surface and containing substantially no fine bubbles or foreign matter in the inner surface layer. The quartz glass crucible of the present invention is suitable as a crucible for pulling a silicon single crystal.
【0002】[0002]
【従来の技術】シリコン融液からシリコン単結晶を引き
上げるシリコン単結晶の製造方法において、シリコン融
液を入れた石英ガラスルツボはシリコンの融点以上に加
熱されており、シリコン融液に接するルツボ内表面層に
気泡や異物が含まれていたり、あるいは内表面に凹凸が
あったり汚れが付着していると、これがシリコン融液と
反応してクリストバライト等の局部的な結晶を生じ、引
き上げられるシリコンの単結晶化率を低下させる原因の
一つになる。従って、石英ルツボの内側層は可能な限り
表面が滑らかで汚れがなく、内表面層に気泡や異物を含
まない透明層として形成されている。2. Description of the Related Art In a method of manufacturing a silicon single crystal in which a silicon single crystal is pulled from a silicon melt, a quartz glass crucible containing the silicon melt is heated to a temperature higher than the melting point of silicon, and an inner surface of the crucible in contact with the silicon melt. If the layer contains air bubbles or foreign matter, or has irregularities or dirt on the inner surface, it reacts with the silicon melt to produce local crystals such as cristobalite, and the silicon that is pulled up This is one of the causes for lowering the crystallization rate. Therefore, the inner layer of the quartz crucible is formed as a transparent layer free of bubbles and foreign matter on the inner surface layer, with the surface being as smooth and free of dirt as possible.
【0003】しかし、従来の石英ガラスルツボは、内側
透明層全体(約0.5〜3.5mm厚)の気泡量は少なくて
も、内表面に接する極く薄い表面層(内表面層:内表面
から約0.5mm厚)に肉眼では識別し難い微細気泡が多数
含まれている場合がある。回転モールド法によって石英
ガラスルツボを製造した場合、内表面層は最初に石英粉
が溶融して溶融層の被膜となる部分であるために、この
部分に微細気泡が取り込まれると石英溶融層を減圧して
も微細気泡を外部に吸引して除去することが難しく、こ
の部分に微細気泡が残留しやすいと云う問題がある。However, the conventional quartz glass crucible has a very thin surface layer (inner surface layer: inner surface layer) in contact with the inner surface even if the amount of bubbles in the entire inner transparent layer (about 0.5 to 3.5 mm thick) is small. (About 0.5 mm thick from the surface), there may be a case where a large number of fine bubbles which are difficult to recognize with the naked eye are included. When a quartz glass crucible is manufactured by the rotary molding method, the inner surface layer is the part where the quartz powder melts first and becomes a coating of the molten layer, so when fine bubbles are taken in this part, the quartz fused layer is depressurized. However, it is difficult to remove the fine bubbles by sucking them to the outside, and there is a problem that the fine bubbles are likely to remain in this portion.
【0004】この内表面層に含まれる気泡は透明な微細
気泡であるために肉眼で見出すことが難しい。顕微鏡を
用いれば検出できるが、通常の顕微鏡による検出方法で
は試料を切り出す必要があり、出荷製品の検査には適し
ない。また、顕微鏡の画像をモニターで観察する検査方
法によれば観察試料を切り出す必要はないが、視野が限
定されるためにルツボ全体を観察するのに適さない。ま
た、この方法はルツボ内表面の汚れや凹凸を観察するの
が難しく、気泡や異物などを検出してもこれを直ちに除
去できない。さらに、システムの構成に費用が嵩むなど
の問題がある。[0004] Since the bubbles contained in the inner surface layer are transparent fine bubbles, it is difficult to find them with the naked eye. Although it can be detected by using a microscope, it is necessary to cut out a sample with a normal detection method using a microscope, which is not suitable for inspection of shipped products. Further, according to the inspection method of observing the image of the microscope on a monitor, it is not necessary to cut out the observation sample, but it is not suitable for observing the entire crucible because the field of view is limited. Further, in this method, it is difficult to observe dirt and irregularities on the inner surface of the crucible, and even if bubbles or foreign substances are detected, they cannot be removed immediately. Further, there is a problem that the cost of the system configuration increases.
【0005】[0005]
【発明の解決課題】本発明は従来の石英ガラスルツボに
おける上記問題を解決したものであり、石英ガラスルツ
ボについて、その内表面層に含まれる微細気泡や異物、
または内表面の凹凸や内表面に付着した汚染物質を容易
に検出して除去した高品質の石英ガラスルツボを提供す
るものである。SUMMARY OF THE INVENTION The present invention solves the above-mentioned problems in the conventional quartz glass crucible. The quartz glass crucible has fine bubbles and foreign matter contained in an inner surface layer thereof.
Another object of the present invention is to provide a high-quality quartz glass crucible from which irregularities on the inner surface and contaminants attached to the inner surface are easily detected and removed.
【0006】[0006]
【課題を解決する手段】本発明は、(1)ルツボ内周面
を赤熱温度以上および軟化温度未満に加熱すると加熱領
域に輝点が生じる石英ガラスルツボについて、ルツボ外
表面を軟化温度より低く維持する一方、酸水素炎または
プラズマ炎によってルツボ内表面層を軟化温度以上に局
部加熱し、輝点発生部分を再溶融させて輝点を除去した
ことを特徴とする再溶融石英ガラスルツボに関する。According to the present invention, there is provided (1) a quartz glass crucible in which, when the inner peripheral surface of a crucible is heated to a temperature higher than the red heat temperature and lower than the softening temperature, a bright spot is generated in a heated area, the outer surface of the crucible is maintained lower than the softening temperature. On the other hand, the present invention relates to a re-melted quartz glass crucible characterized by locally heating an inner surface layer of a crucible to a softening temperature or higher by an oxyhydrogen flame or a plasma flame to re-melt a bright spot generating portion to remove a bright spot.
【0007】また、本発明は、(2)ルツボの内周面を
800℃〜1500℃に加熱すると加熱領域に輝点が生
じる石英ガラスルツボについて、ルツボ外表面を150
0℃未満に維持する一方、酸水素炎またはプラズマ炎に
よってルツボ内表面を1850℃〜2400℃に局部加
熱し、輝点発生部分を再溶融させて輝点を除去すること
を特徴とする再溶融石英ガラスルツボの製造方法に関す
る。Further, the present invention relates to (2) a quartz glass crucible in which, when the inner peripheral surface of the crucible is heated to 800 ° C. to 1500 ° C., a bright spot is generated in the heated area,
While maintaining the temperature below 0 ° C., the inner surface of the crucible is locally heated to 1850 ° C. to 2400 ° C. by an oxyhydrogen flame or a plasma flame to re-melt the bright spot generating portion to remove the bright spot. The present invention relates to a method for manufacturing a quartz glass crucible.
【0008】本発明の製造方法は、(3)輝点が検出さ
れる石英ガラスルツボについて、再溶融前に石英ガラス
ルツボの内表面層をサンドブラスト処理する方法、
(4)再溶融後、冷却した石英ガラスルツボを加熱炉に
装入してアニールし、熱歪みを除去する方法、(5)石
英製バーナを用い、ルツボ内表面に沿って石英製バーナ
を走査してルツボ内表面層を加熱する方法を含む。The production method of the present invention comprises: (3) a method of sandblasting the inner surface layer of the quartz glass crucible before re-melting, with respect to the quartz glass crucible from which a bright spot is detected;
(4) A method in which a cooled quartz glass crucible is placed in a heating furnace after annealing and then annealed to remove thermal distortion. (5) Using a quartz burner, scan the quartz burner along the inner surface of the crucible. And heating the inner surface layer of the crucible.
【0009】本発明の石英ガラスルツボは、石英ガラス
ルツボの内表面を一定温度に加熱して内表面に浮かび上
がる輝点を観察すると云う極めて簡単な非破壊検査方法
によってルツボ内表面の凹凸や汚れ、あるいは内表面層
に含まれる微細気泡や異物を検出し、酸水素炎またはプ
ラズマ炎によって内表面層を再溶融することにより、こ
れらを除去した高品質のルツボである。この微細気泡や
異物は検出後の再溶融ないしサンドブラスト処理によっ
て容易に除去されるので、高品質の石英ガラスルツボを
低コストで得ることができる。また、この石英ガラスル
ツボは内表面の凹凸や汚れがなく、また内表面層に微細
気泡や異物を実質的に含まないので、シリコン単結晶の
引き上げに用いることにより、優れた単結晶収率を得る
ことができる。また、本発明の製造方法によれば上記石
英ガラスルツボを低コストで得ることができる。[0009] The quartz glass crucible of the present invention is manufactured by heating the inner surface of the quartz glass crucible to a constant temperature and observing the bright spots emerging on the inner surface. Alternatively, it is a high-quality crucible in which fine bubbles and foreign substances contained in the inner surface layer are detected, and these are removed by re-melting the inner surface layer by oxyhydrogen flame or plasma flame. Since these fine bubbles and foreign matter are easily removed by re-melting or sandblasting after detection, a high-quality quartz glass crucible can be obtained at low cost. In addition, since this quartz glass crucible is free from irregularities and dirt on the inner surface, and does not substantially contain fine bubbles or foreign matter in the inner surface layer, it can be used for pulling a silicon single crystal to achieve an excellent single crystal yield. Obtainable. Further, according to the manufacturing method of the present invention, the above quartz glass crucible can be obtained at low cost.
【0010】[0010]
【発明の実施の形態】以下、本発明を実施形態に基づい
て詳細に説明する。本発明の石英ガラスルツボは、ルツ
ボ内周面を赤熱温度以上および軟化温度未満に加熱する
と加熱領域に輝点が生じる石英ガラスルツボについて、
ルツボ外表面を軟化温度より低く維持する一方、酸水素
炎またはプラズマ炎によってルツボ内表面を軟化温度以
上に局部加熱し、輝点発生部分を再溶融させて輝点を除
去したことを特徴とする再溶融石英ガラスルツボであ
る。なお、再溶融に用いる石英ガラスルツボの製造方法
は限定されない。回転モールド法や他の方法によって製
造された石英ガラスルツボを広く用いることができる。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail based on embodiments. The quartz glass crucible of the present invention is a quartz glass crucible that produces a bright spot in the heating region when the inner peripheral surface of the crucible is heated to a temperature higher than the red heat temperature and lower than the softening temperature.
The crucible outer surface is maintained at a temperature lower than the softening temperature, while the crucible inner surface is locally heated to a temperature higher than the softening temperature by an oxyhydrogen flame or a plasma flame, and the bright spot generating portion is re-melted to remove the bright spot. It is a re-melted quartz glass crucible. In addition, the manufacturing method of the quartz glass crucible used for re-melting is not limited. A quartz glass crucible manufactured by a rotary molding method or another method can be widely used.
【0011】本発明は、再溶融の加熱手段として酸水素
炎またはプラズマ炎を用いる。酸水素炎はバーナを用い
た局部加熱であるので、輝点の発生部分を選択的にかつ
迅速に再溶融することができる。更に、単位面積当たり
の加熱密度が非常に大きく、従ってルツボ内表面層を重
点的に短時間で加熱するのでルツボ外表面層の温度を低
く保持することができる。プラズマ炎も同様に局部加熱
を行うことができる。加熱バーナはその炎の吹出口がル
ツボ内表面に沿って走行するように移動手段に装着して
用いると良い。また、加熱バーナは不純物が混入しない
ように石英製バーナが好ましい。The present invention uses an oxyhydrogen flame or a plasma flame as a heating means for re-melting. Since the oxyhydrogen flame is a local heating using a burner, it is possible to selectively and quickly re-melt a portion where a bright spot occurs. Further, the heating density per unit area is very high, and therefore the crucible inner surface layer is mainly heated in a short time, so that the temperature of the crucible outer surface layer can be kept low. The plasma flame can also be locally heated. The heating burner is preferably mounted on the moving means so that the outlet of the flame runs along the inner surface of the crucible. The heating burner is preferably a quartz burner so that impurities are not mixed.
【0012】輝点観察時の石英ガラスルツボ内表面の加
熱温度は、石英ガラスの赤熱温度以上および軟化温度
(軟化点)未満である。赤熱温度とは石英ガラスルツボの
加熱部分が赤色を呈し始める温度を云い、概ね800℃
である。加熱部分が赤熱しないと微細気泡や異物による
輝点が観察されない。一方、加熱温度が石英ガラスの軟
化温度(約1700℃)を超えるとルツボが変形して凹凸
を生じるので好ましくない。輝点を明瞭に判別するには
1500℃以下が適当であり、1400℃以下が好まし
い。1500℃を超えるとルツボ表面の輝点とその周囲
が同じ明るさになるので輝点を判別し難くなる。表面温
度は赤外線温度計などによって測定すると良い。The heating temperature of the inner surface of the quartz glass crucible during the observation of the bright spot is higher than the red heat temperature and the softening temperature of the quartz glass.
(Softening point). The red heat temperature is a temperature at which a heated portion of a quartz glass crucible starts to show a red color, and is approximately 800 ° C.
It is. If the heated part does not glow red, no bright spot due to fine bubbles or foreign matter is observed. On the other hand, if the heating temperature exceeds the softening temperature of the quartz glass (about 1700 ° C.), the crucible is deformed and unevenness is generated, which is not preferable. 1500 ° C. or lower is suitable for clearly distinguishing the bright spot, and 1400 ° C. or lower is preferable. If the temperature exceeds 1500 ° C., the bright spot on the crucible surface and its surroundings have the same brightness, so that it is difficult to distinguish the bright spot. The surface temperature may be measured with an infrared thermometer or the like.
【0013】ルツボ内表面を石英ガラスの赤熱温度以上
および軟化温度未満、好ましくは800℃〜1500℃
に加熱すると、ルツボの内表面層に微細気泡が含まれて
いるものや、ルツボ内表面に凹凸が存在しているもの
は、この部分の屈折率が周囲と異なるために光が反射し
て周囲より明るい輝点として観察される。また、ルツボ
内表面層に異物が含まれていたり、内表面に汚染物質が
付着していると、石英ガラスより放射率が高いものは周
囲よりも明るく光って観察される。従って、この輝点に
よって内表面の凹凸や汚れ、あるいは内表面層に含まれ
る微細気泡や異物の存在を判断することができる。な
お、大部分の異物や汚染物質の放射率は石英ガラスより
大きいので輝点として観察されるものが多い。[0013] The inner surface of the crucible is heated to above the red heat temperature and below the softening temperature of quartz glass, preferably from 800 ° C to 1500 ° C.
When the crucible is heated to a temperature above, the crucible whose inner surface layer contains microbubbles or whose crucible inner surface has irregularities will reflect light because the refractive index of this part is different from that of the surroundings. Observed as a brighter spot. In addition, when a foreign substance is contained in the inner surface layer of the crucible or a contaminant adheres to the inner surface, a material having a higher emissivity than quartz glass is observed to be brighter than the surroundings. Therefore, it is possible to determine the presence or absence of irregularities and dirt on the inner surface, or fine bubbles and foreign substances contained in the inner surface layer, based on the bright spot. Since the emissivity of most foreign substances and contaminants is larger than that of quartz glass, many of them are observed as bright spots.
【0014】次に、加熱領域に輝点が生じたものについ
て、ルツボ外表面の温度を軟化温度より低く維持する一
方、酸水素炎またはプラズマ炎の熱量を高めてルツボの
内表面層を軟化温度以上に加熱し、再溶融させて輝点を
除去する。ルツボ外表面の温度がその軟化温度より高い
状態で内表面層を再溶融するとルツボが変形する虞があ
る。具体的には、ルツボ外表面を例えば1500℃以
下、好ましくは1400℃以下に維持し、ルツボ内表面
を1850℃〜2400℃、好ましくは2000℃〜2
350℃に加熱して再溶融させる。ルツボ外表面と内表
面の温度を以上の範囲に制御することにより、ルツボの
内表面層を再溶融してもルツボが変形しない。Next, for those in which a bright spot is generated in the heating area, the temperature of the outer surface of the crucible is kept lower than the softening temperature, while the calorific value of the oxyhydrogen flame or the plasma flame is increased to raise the softening temperature of the inner surface layer of the crucible. Heating is performed as described above, and re-melting is performed to remove bright spots. If the inner surface layer is remelted while the temperature of the outer surface of the crucible is higher than its softening temperature, the crucible may be deformed. Specifically, the outer surface of the crucible is maintained at, for example, 1500 ° C or lower, preferably 1400 ° C or lower, and the inner surface of the crucible is maintained at 1850 ° C to 2400 ° C, preferably 2000 ° C to 2 ° C.
Heat to 350 ° C. to re-melt. By controlling the temperature of the outer surface and the inner surface of the crucible within the above range, the crucible does not deform even if the inner surface layer of the crucible is re-melted.
【0015】なお、再溶融の際、モールドを使用せずに
ルツボ外表面を冷気にさらしてルツボの放熱を促せば、
ルツボ外表面の温度を1500℃以下、好ましくは14
00℃以下に抑制することができる。因みに、既に述べ
たように酸水素炎やプラズマ炎は局部加熱であるので、
ルツボ内表面の輝点発生部分を軟化温度以上に加熱して
もルツボ外表面の温度を1400℃以下に抑えるのは容
易である。In the case of re-melting, if the outer surface of the crucible is exposed to cold air without using a mold to promote heat dissipation of the crucible,
The temperature of the outer surface of the crucible is 1500 ° C. or less, preferably 14 ° C.
It can be suppressed to not more than 00 ° C. By the way, as already mentioned, since oxyhydrogen flame and plasma flame are local heating,
It is easy to suppress the temperature of the crucible outer surface to 1400 ° C. or less even when the bright spot generating portion on the crucible inner surface is heated to a temperature higher than the softening temperature.
【0016】ルツボの内表面層を再溶融することによ
り、この部分に含まれている微細気泡は内表面に押し出
されて弾け、そのピンホールが溶融した石英ガラスによ
って充填され、実質的に気泡を含有しない石英ガラス層
になる。また表面の凹凸は消滅して平滑になり、異物は
揮発して除去される。[0016] By remelting the inner surface layer of the crucible, the fine bubbles contained in this portion are extruded and burst to the inner surface, and the pinholes are filled with the fused quartz glass to substantially remove the bubbles. It becomes a quartz glass layer that does not contain. The surface irregularities disappear and become smooth, and the foreign matter is volatilized and removed.
【0017】なお、ルツボ内表面を1850℃〜240
0℃に加熱して再溶融するには、酸水素炎ないしプラズ
マ炎の熱量を500〜3000W/cm2、好ましくは10
00〜2500W/cm2とすれば約1分間で再溶融する。
バーナ先端からルツボ内表面までの最適距離はバーナに
よる。この距離が近すぎると未燃焼ガスがルツボ内表面
に当たるので好ましくない。一方、この距離が遠いとル
ツボ内表面の加熱面積は大きくなるが、加熱面積当たり
の熱量が小さくなるので、むしろ加熱効率が低下する。The inner surface of the crucible is kept at 1850 ° C. to 240 ° C.
In order to re-melt by heating to 0 ° C., the calorific value of the oxyhydrogen flame or plasma flame should be 500 to 3000 W / cm 2 , preferably 10 to
At a rate of 00 to 2500 W / cm 2 , re-melting takes about 1 minute.
The optimum distance from the burner tip to the crucible inner surface depends on the burner. If the distance is too short, the unburned gas hits the inner surface of the crucible, which is not preferable. On the other hand, if the distance is long, the heating area of the inner surface of the crucible increases, but the amount of heat per heating area decreases, so that the heating efficiency decreases.
【0018】輝点が生じた石英ガラスルツボは、内表面
層の再溶融に先立ち、ルツボの内表面をサンドブラスト
処理することにより再溶融処理の負担を軽減することが
できる。サンドブラスト処理を行うことにより、微細気
泡や異物を含有する部分が削り落とされるので再溶融時
間を短縮することができる。サンドブラスト処理は例え
ば、2〜7kg/cm2の高圧空気でシリカ粒子を吹き付けて
行う。The quartz glass crucible having a bright spot can be sandblasted on the inner surface of the crucible prior to remelting the inner surface layer, thereby reducing the burden of the remelting process. By performing the sandblasting, a portion containing fine bubbles and foreign matter is scraped off, so that the remelting time can be reduced. The sandblasting is performed, for example, by blowing silica particles with high-pressure air of 2 to 7 kg / cm 2 .
【0019】また、酸水素炎やプラズマ炎によって局部
加熱すると石英ガラスルツボに熱歪みが多少なりとも生
じるので、再溶融した後に石英ガラスルツボを加熱炉に
装入してアニールし、熱歪みを除去するのが好ましい。
アニール処理の具体例としては、室温(約25℃)から1
200℃までを2時間で昇温し、1200℃に2時間保
持した後に1200℃〜700℃まで1℃/minの割合で
徐冷した後に、700℃〜室温まで強制冷却あるいは自
然冷却すると良い。Further, when the quartz glass crucible is locally heated by an oxyhydrogen flame or a plasma flame, the quartz glass crucible is somewhat heat-strained. Therefore, after re-melting, the quartz glass crucible is put into a heating furnace and annealed to remove the heat distortion. Is preferred.
As a specific example of the annealing treatment, a temperature of room temperature (about 25 ° C.)
The temperature may be raised to 200 ° C. in 2 hours, maintained at 1200 ° C. for 2 hours, gradually cooled from 1200 ° C. to 700 ° C. at a rate of 1 ° C./min, and then forcedly cooled or naturally cooled to 700 ° C. to room temperature.
【0020】輝点が観察された石英ガラスルツボについ
て以上の再溶融処理を施すことによって輝点を除去し、
実質的に輝点を含まない石英ガラスルツボを得ることが
できる。なお、輝点の個数が10個/cm2以下、好ましく
は3個/cm2以下であれば、失透試験において、ルツボの
失透面積を抑えることができ、高い平均単結晶化率を達
成することができる。具体的には、輝点の個数が10個
/cm2以下のルツボは、アルゴン雰囲気下、5〜20Tor
r、加熱温度1500±50℃、20〜50hrの加熱条
件下において、内表面の失透面積を面積率で概ね30%
以下に抑えることができ、このルツボを用いてシリコン
単結晶を引き上げたときに平均で70%程度の単結晶化
率を得ることができる。また、輝点の個数が3個/cm2以
下のルツボは実質的に内表面の失透を生ぜず、平均で7
7%程度の高い単結晶化率を得ることができる。なお、
本発明においてルツボ内表面層に微細気泡や異物が実質
的に含まれていないとは輝点の個数が好ましくは3個/c
m2以下であることを云う。また、本発明の再溶融はルツ
ボ内表面全体に適用しても良く、また輝点が存在する部
分について局部的に適用しても良い。The quartz glass crucible where the bright spots are observed is subjected to the above-mentioned re-melting treatment to remove the bright spots,
A quartz glass crucible substantially free of luminescent spots can be obtained. When the number of bright spots is 10 / cm 2 or less, preferably 3 / cm 2 or less, the devitrification area of the crucible can be suppressed in the devitrification test, and a high average single crystallization ratio is achieved. can do. Specifically, the number of bright spots is 10
/ cm 2 or less crucible under argon atmosphere, 5-20 Tor
r, Under heating conditions of 1500 ± 50 ° C. and 20 to 50 hours, the devitrification area of the inner surface is approximately 30% in area ratio.
When the silicon single crystal is pulled up using this crucible, a single crystallization ratio of about 70% on average can be obtained. In addition, a crucible having 3 or less bright spots does not substantially cause devitrification of the inner surface, and has an average of 7 / cm 2.
A high single crystallization ratio of about 7% can be obtained. In addition,
In the present invention, the number of bright spots is preferably 3 / c when it is said that the crucible inner surface layer is substantially free of fine bubbles and foreign matter.
It refers to that at m 2 or less. Further, the remelting of the present invention may be applied to the entire inner surface of the crucible, or may be locally applied to a portion where a bright spot exists.
【0021】[0021]
【実施例】回転モールド法によって口径22インチの石英
ガラスルツボ(内側透明層:2mm、外周側不透明層:10m
m)を複数個製造した。この石英ガラスルツボについて、
石英バーナを用い、その内表面を酸水素炎によって約1
100℃に加熱して輝点の個数を検査した。次に、酸水
素炎の熱量を高めて、表1の条件下でルツボ内表面層を
再溶融した。この再溶融したルツボについて形状に変化
がないか検査した。さらに、この再溶融ルツボを表1の
条件下でアニールした後に、電気加熱炉に入れ、20To
rrのアルゴン雰囲気下、1500℃の一定温度で24時
間加熱することにより失透試験を行った。また、他の再
溶融したルツボを用いてシリコン単結晶の引き上げを行
い、単結晶化率を求めた。この結果を表1に示した。EXAMPLE A quartz glass crucible having a diameter of 22 inches (inner transparent layer: 2 mm, outer opaque layer: 10 m) by a rotary molding method.
m) were produced. About this quartz glass crucible,
Using a quartz burner, the inner surface of the
After heating to 100 ° C., the number of bright spots was checked. Next, the calorific value of the oxyhydrogen flame was increased, and the crucible inner surface layer was re-melted under the conditions shown in Table 1. The remelted crucible was inspected for any change in shape. Further, after the re-melted crucible was annealed under the conditions shown in Table 1, the crucible was placed in an electric heating furnace, and was subjected to 20 To
A devitrification test was performed by heating at a constant temperature of 1500 ° C. for 24 hours in an argon atmosphere of rr. Further, a silicon single crystal was pulled up using another re-melted crucible, and a single crystallization ratio was obtained. The results are shown in Table 1.
【0022】[0022]
【表1】 [Table 1]
【0023】[0023]
【発明の効果】本発明の石英ガラスルツボは、酸水素炎
またはプラズマ炎によってルツボ内表面層を一定温度に
加熱して輝点を検出し、さらにルツボ内表面を軟化温度
以上に加熱して内表面層に含まれる微細気泡や異物を除
去したルツボであり、内表面に凹凸や汚れがなく、かつ
内表面層に微細気泡や異物を実質的に含まないので、シ
リコン単結晶引き上げの際に高い単結晶収率を得ること
ができる。また、本発明は酸水素炎またはプラズマ炎を
用いた局部加熱であるので、輝点の発生部分を選択的に
かつ迅速に再溶融することができる。さらに、ルツボ内
表面を急速に重点的に加熱するのでルツボ外表面の温度
を低く保持することができる。According to the quartz glass crucible of the present invention, the inner surface layer of the crucible is heated to a certain temperature by an oxyhydrogen flame or a plasma flame to detect a bright spot, and the inner surface of the crucible is further heated to a softening temperature or higher. A crucible from which fine bubbles and foreign substances contained in the surface layer have been removed.There is no irregularity or dirt on the inner surface, and the inner surface layer contains substantially no fine bubbles or foreign substances. A single crystal yield can be obtained. Further, since the present invention is a local heating using an oxyhydrogen flame or a plasma flame, a portion where a luminescent spot occurs can be selectively and quickly re-melted. Furthermore, since the crucible inner surface is rapidly and intensively heated, the temperature of the crucible outer surface can be kept low.
フロントページの続き (72)発明者 佐藤 貴宏 秋田県秋田市茨島5丁目14番3号 三菱マ テリアルクォーツ株式会社開発センター内 Fターム(参考) 4G014 AH23 5F053 AA12 BB04 BB13 FF04 RR04 RR07 Continued on the front page (72) Inventor Takahiro Sato 5-14-3 Ibarjima, Akita City, Akita Prefecture Mitsubishi Materials Quartz Co., Ltd. Development Center F-term (reference) 4G014 AH23 5F053 AA12 BB04 BB13 FF04 RR04 RR07
Claims (5)
温度未満に加熱すると加熱領域に輝点が生じる石英ガラ
スルツボについて、ルツボ外表面を軟化温度より低く維
持する一方、酸水素炎またはプラズマ炎によってルツボ
内表面層を軟化温度以上に局部加熱し、輝点発生部分を
再溶融させて輝点を除去したことを特徴とする再溶融石
英ガラスルツボ。1. A quartz glass crucible in which a heating area has a bright spot when the inner peripheral surface of the crucible is heated to a temperature higher than the red heat temperature and lower than the softening temperature, while maintaining the outer surface of the crucible lower than the softening temperature, while maintaining an oxyhydrogen flame or a plasma flame. A remelted quartz glass crucible characterized in that a crucible inner surface layer is locally heated to a temperature equal to or higher than a softening temperature, and a bright spot generating portion is remelted to remove a bright spot.
に加熱すると加熱領域に輝点が生じる石英ガラスルツボ
について、ルツボ外表面を1500℃未満に維持する一
方、酸水素炎またはプラズマ炎によってルツボ内表面を
1850℃〜2400℃に局部加熱し、輝点発生部分を
再溶融させて輝点を除去することを特徴とする再溶融石
英ガラスルツボの製造方法。2. The crucible has an inner peripheral surface of 800 ° C. to 1500 ° C.
In the case of a quartz glass crucible that produces a bright spot in the heating area when heated, the crucible outer surface is maintained at less than 1500 ° C., and the crucible inner surface is locally heated to 1850 ° C. to 2400 ° C. by oxyhydrogen flame or plasma flame, A method for producing a re-melted quartz glass crucible, characterized by re-melting a generated portion to remove a bright spot.
いて、再溶融前に石英ガラスルツボの内表面層をサンド
ブラスト処理する請求項1または2の製造方法。3. The method according to claim 1, wherein the inner surface layer of the quartz glass crucible for which a bright spot is detected is subjected to sandblasting before remelting.
加熱炉に装入してアニールし、熱歪みを除去する請求項
2または3の製造方法。4. The method according to claim 2, wherein after remelting, the cooled quartz glass crucible is placed in a heating furnace and annealed to remove thermal distortion.
って石英製バーナを走査してルツボ内表面層を加熱する
請求項2,3または4の製造方法。5. The method according to claim 2, wherein the crucible inner surface layer is heated by scanning the quartz burner along the inner surface of the crucible using the quartz burner.
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|---|---|---|---|
| JP2000160737A JP4424825B2 (en) | 2000-05-30 | 2000-05-30 | Method for producing quartz glass crucible |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000160737A JP4424825B2 (en) | 2000-05-30 | 2000-05-30 | Method for producing quartz glass crucible |
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| JP2001342030A true JP2001342030A (en) | 2001-12-11 |
| JP4424825B2 JP4424825B2 (en) | 2010-03-03 |
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