JP2001210871A - Side emission type light emitting diode, method for manufacturing the same, and portable terminal device provided with this side emission type light emitting diode - Google Patents

Abstract

(57) [Problem] To provide a side light emitting type light emitting diode which can suppress the manufacturing cost and the variation of the emission color. A first substrate, a second substrate, and a third substrate are provided.
A side emission type light-emitting diode comprising: a laminated substrate formed by laminating substrates 23; a light emitting element chip 1 mounted in the laminated substrate; and a resin 4 covering the periphery of the light emitting element chip 1. A color conversion material layer 3 is provided on a portion of the second substrate 22 surrounding the side surface of the light emitting element chip 1 and facing the light emitting element chip 1, and light from the light emitting element chip 1 is converted by the color conversion material layer 3. The light having the wavelength component obtained by mixing the wavelength of the light and the wavelength of the light from the light emitting element chip 1 is emitted.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a side emission type light emission used for backlight illumination of a liquid crystal display (LCD) of a portable terminal device such as a cellular phone, back illumination of an operation key button, or indicator illumination. It relates to a diode (side emission type LED).

[0002]

2. Description of the Related Art In a conventional side emission type LED, when a light emission color of a light emitting element chip is converted, for example, a method of applying a color conversion material (phosphor or the like) to the surface of the light emitting element chip, or When the surface of the light emitting element chip is covered with a transparent resin (a resin colored in an arbitrary color may be used), a method of mixing a color conversion material with the transparent resin has been used. .

[0003] Further, in this side emission type LED, for example, a cup-shaped hole is formed in a substrate, a light emitting element chip is mounted in the hole, and then a transparent resin mixed with a color conversion material is filled. It is manufactured through a process of sealing the hole with a colorless transparent or colored transparent resin for the purpose of securing the shape of the light or the side emission type LED.

As described above, by using the color conversion material, the wavelength of light obtained by converting light from the light emitting element chip by the color conversion material and the wavelength of light from the light emitting element chip are mixed. A side emission type LED that emits light having a different wavelength component is realized.

[0005]

However, in the above-mentioned side emission type LED, since the size of the light emitting element chip is about 0.3 mm square, it is difficult to apply a color conversion material to the surface of the light emitting element chip. There is a problem that coating unevenness may occur and it is very difficult to adjust the coating amount of the color conversion material. Further, there are also problems that bubbles are generated when the color conversion material is mixed with the resin, and the color conversion material settles in the resin while the resin is cured.

[0006] If these problems occur, the conversion by the color conversion material may cause conversion unevenness, or control in a manufacturing process performed to realize a predetermined luminescent color may be complicated.
It becomes difficult to control variations in product performance.

[0007] Also, when forming a cup-shaped hole and filling the hole with a transparent resin mixed with a color conversion material, it is necessary to reduce the size of the hole depending on the particle size of the color conversion material and the viscosity of the resin. However, there is a problem that miniaturization of the side emission type LED is restricted and restrictions are imposed.

The present invention has been made in order to solve such a problem, and an object of the present invention is to provide a side emission type LED which can suppress the manufacturing cost and the variation of the emission color.

[0009]

Means for Solving the Problems The side emission type L of the present invention is used.
In the ED, a color conversion material layer is provided on a portion of the substrate surrounding the side surface of the light emitting element chip, the color conversion material layer being provided at a portion facing the light emitting element chip. And light having a wavelength component in which the wavelength of the light from the light emitting element chip is mixed.

According to the present invention, uneven application of the color conversion material to the surface of the light emitting element chip, poor adjustment of the application amount of the color conversion material, generation of bubbles when the color conversion material is mixed with the resin,
In addition, sedimentation of the color conversion material in the resin can be prevented, and a side emission type LED having a good emission color can be obtained.

Further, the substrate surrounding the side surface of the light emitting element chip may be transparent to the wavelength of light from the light emitting element chip. In this case, light from the light emitting element chip is emitted in all directions. can do.

Further, the portable terminal device of the present invention is characterized in that
Alternatively, the side emission type light emitting diode described in 2 is used for at least one of backlight illumination of a liquid crystal display device and backlight of an operation key button.

According to the present invention, it is possible to reduce the size of a portion related to illumination and to realize a portable terminal device in which the variation in emission color is suppressed.

Further, a method of manufacturing a side emission type LED of the present invention includes a step of mounting a plurality of light emitting element chips on one substrate by die bonding and wire bonding;
A step of forming a through hole in another substrate, a step of forming a color conversion material layer on a peripheral wall of the through hole, and a step in which the light emitting element chip is fitted in the through hole, A step of bonding another substrate, a step of injecting and solidifying a transparent epoxy resin into the through hole, and a step of laminating and bonding another another substrate on the other substrate after injecting the transparent epoxy resin, Dicing the light emitting element chips mounted in the laminated substrate by dicing.

According to the present invention, it is possible to prevent a problem in a conventional side emission type LED in which a hole is restricted by a particle diameter of a color conversion material or a viscosity of a resin.

The step of forming a color conversion material layer on the peripheral wall of the through hole includes the steps of injecting a color conversion material mixed with an epoxy resin into the through hole and curing the color conversion material mixed with the epoxy resin. By forming a through hole having a smaller diameter than the through hole formed in the other substrate in the cured color conversion material, a color having a uniform thickness in the through hole formed in the other substrate. And a step of forming a conversion material layer. According to such a step, the manufacturing cost can be reduced and the conventional side emission type L
It is also possible to prevent sedimentation of the color conversion material occurring in the ED.

[0017]

Next, a side emission type LE of the present invention will be described.
An embodiment D will be described with reference to the drawings.

FIG. 1 is an explanatory view showing one embodiment of the side emission type LED of the present invention. FIG. 1A is a plan view showing the embodiment of the side emission type LED of the present invention, and FIG. FIG. 2B is a sectional view taken along line AA of FIG.

In this embodiment, the side emission type LE
D is a light-emitting element chip 1, a first substrate 21 on which the light-emitting element chip 1 is mounted, a second substrate 22 surrounding a side surface of the light-emitting element chip 1, and a third substrate affixed to the top surface of the second substrate 22. A laminated substrate formed by laminating the substrate 23, a layer (hereinafter simply referred to as a “color conversion material layer”) 3 made of a color conversion material provided on a portion of the second substrate 22 facing the light emitting element chip 1, And a resin layer 4 that covers the periphery of the light emitting element chip 1.

One terminal of the light emitting element chip 1 is die-bonded to one terminal (not shown) provided on the first substrate 21, and the other terminal is provided with another terminal (not shown) provided on the first substrate 21. ) Is wire-bonded with a wire 11.

Further, when a predetermined voltage is applied between one terminal provided on the first substrate 21 and the other terminal, light from the light emitting element chip 1 is converted by the color conversion material layer 3 so that Light having a wavelength component obtained by mixing the wavelength of the obtained light with the wavelength of the light from the light emitting element chip 1 is emitted in one direction (the direction indicated by the arrow D1 in FIG. 1). Here, the reason why light is output from only one direction is that the first substrate 21, the second substrate 22, and the third substrate 23 block light emission in other directions.

Next, an embodiment of a method of manufacturing the side emission type LED having the above-described configuration will be described with reference to the drawings.

FIG. 2 is an explanatory view showing a manufacturing process of the side emission type LED shown in FIG. 1, and FIG. 3 is a perspective view showing an example of a state in a manufacturing process of the side emission type LED shown in FIG. Note that FIG. 3 illustrates the third substrate 23 in an omitted form.

First, a plurality of light emitting element chips 1a and 1b are mounted on the first substrate 21 by die bonding and wire bonding (see FIG. 2A).

Further, a through hole 22a having an arbitrary diameter is formed in the second substrate 22 by using a drill or the like (see FIG. 2B). The through-hole 22a may be formed in advance by a molding die when the second substrate 22 is molded.

Next, the color conversion material 31 mixed with the epoxy resin is injected into the through holes 22a, and the color conversion material 31 mixed with the epoxy resin is cured. The color conversion material 31 is injected into the through-hole 22a by placing the color conversion material 31 near the through-hole 22a on the upper surface of the second substrate 22 and moving the rubber spatula 5 along the upper surface of the second substrate 22 with an arrow. This may be performed by moving the color conversion material 31 onto the through-hole 22a by moving in the direction indicated by D2 and filling the through-hole 22a with the color conversion material 31 (FIGS. 2C and 2D). )), Or by printing or the like.

Thereafter, a through hole having a smaller diameter than the through hole 22a is formed in the cured color conversion material 31 by using a drill 6 or the like, so that the color conversion having a uniform thickness in the through hole 22a. The material layer 3 is fixed (FIG. 2
(E)).

Then, with the light emitting element chips 1a and 1b fitted in the through holes 22a, the second substrate 22 is bonded on the first substrate 21, and then a transparent epoxy resin is injected into the through holes 22a and solidified. At the same time as forming the resin layer 4
The substrate 23 is laminated and adhered on the second substrate 22 (FIG. 2).
(F)). That is, the third substrate 23 is bonded by the transparent epoxy resin.

Finally, the light emitting element chips 1a and 1b are individually diced (two in the present embodiment).
By dividing (dicing line L is shown in FIG. 3), the side emission type LED shown in FIG. 1 is obtained.

When a transparent substrate or a substrate formed of a material capable of guiding light from a light emitting element chip is used as the second substrate 22, all directions (the direction indicated by arrow D3 in FIG. 4) Side emission type LED that emits light to
Can be obtained.

When the color conversion material layer 3 is not formed in the through hole 22a, the light itself from the light emitting element chip 1 can be emitted from the side emission type LED. Furthermore, if a plurality of light emitting element chips having different emission colors are mounted in one side emitting LED, mixed light of light from the plurality of light emitting element chips can be emitted from the side emitting LED.

Further, the side emission type LED of the present invention can be used for backlight illumination of an LCD of a portable terminal device and backlight of operation key buttons. It is possible to realize a thin terminal device and an improvement in display quality. For example, the side-emitting LEDs emitting light in one direction are mainly used for backlighting LCDs, and the side-emitting LEDs emitting light in all directions are mainly used for backlighting operation key buttons. .

[0033]

According to the side emission type light emitting diode of the present invention, the color conversion material layer is provided on the portion of the substrate surrounding the side surface of the light emitting element chip, which is opposed to the light emitting element chip. Because the color conversion material is not applied unevenly to the color conversion material, the adjustment amount of the color conversion material is not properly adjusted, bubbles are not generated when the color conversion material is mixed with the resin, and the color conversion material does not settle in the resin. Variation can be suppressed.

If the substrate surrounding the side surface of the light emitting element chip is made transparent to the wavelength of the light from the light emitting element chip, light from the light emitting element chip can be emitted in all directions.

In the portable terminal device of the present invention, the side-emitting light emitting diode of the present invention is used for at least one of the backlight illumination of the liquid crystal display device and the backlight of the operation key buttons. And improvement of display quality can be realized.

Further, according to the method for manufacturing a side emission type LED of the present invention, there is no problem in the conventional side emission type LED such that holes are restricted by the particle size of the color conversion material and the viscosity of the resin. The size of the side emission type LED can be reduced.

The step of forming a color conversion material layer on the peripheral wall of the through hole includes the steps of injecting a color conversion material mixed with an epoxy resin into the through hole and curing the color conversion material mixed with the epoxy resin. By forming a through hole having a smaller diameter than the through hole formed in the other substrate, the color conversion material having a uniform thickness in the through hole formed in the other substrate. Since the method includes the step of forming the material layer, the manufacturing cost can be reduced as compared with the conventional manufacturing method, and the color conversion material, which occurs in the conventional side emission type LED, can be prevented from being settled and the emission color can be varied. Can be suppressed.

[Brief description of the drawings]

FIG. 1 is an explanatory view showing one embodiment of a side emission type LED of the present invention, wherein (a) is a side emission type LE of the present invention.
D is a plan view showing an embodiment of the present invention, and FIG.
FIG. 3 is a sectional view taken along line A.

2 (a) to 2 (f) show side emission type L shown in FIG.
It is explanatory drawing which shows the manufacturing process of ED.

FIG. 3 is a perspective view showing an example of a state in a manufacturing process of the side emission type LED shown in FIG.

FIG. 4 is an explanatory view showing another embodiment of the side emission type LED of the present invention.

[Explanation of symbols]

 1, 1a, 1b Light emitting element chip 21 First substrate 22 Second substrate 22a Through hole 23 Third substrate 3 Color conversion material layer 4 Resin layer

Claims (5)

[Claims] 1. A side-emitting light emitting diode comprising: a laminated substrate formed by laminating a plurality of substrates; and a light emitting element chip mounted in the laminated substrate, wherein the substrate surrounds a side surface of the light emitting element chip. A color conversion material layer is provided at a portion facing the light emitting element chip, and the wavelength of light obtained by converting light from the light emitting element chip by the color conversion material layer and the wavelength of light from the light emitting element chip are different. A side-emitting light emitting diode, wherein light having a mixed wavelength component is emitted. 2. The side-emitting light emitting diode according to claim 1, wherein a substrate surrounding a side surface of the light emitting element chip is transparent to a wavelength of light from the light emitting element chip. 3. The side emission type light emitting diode according to claim 1, wherein the side emission type light emitting diode is used for at least one of backlight illumination of a liquid crystal display device and backlight of an operation key button. Terminal equipment equipped with a light emitting diode. 4. A method for manufacturing a side-emitting type light emitting diode comprising: a laminated substrate formed by laminating a plurality of substrates; and a light emitting element chip mounted in the laminated substrate, the method comprising die bonding to one substrate. Mounting a plurality of light emitting element chips by wire bonding, forming a through hole in another substrate, forming a color conversion material layer on a peripheral wall of the through hole, and connecting the light emitting element chip to the through hole. In the state fitted to
A step of bonding the other substrate on the one substrate, a step of injecting and solidifying a transparent epoxy resin into the through hole, and a step of placing another substrate on the other substrate after the transparent epoxy resin is injected. A method for manufacturing a side-emitting light emitting diode, comprising: a step of laminating and bonding; and a step of individually dividing light emitting element chips mounted in the laminated substrate by dicing. 5. The step of forming a color conversion material layer on the peripheral wall of the through hole comprises: injecting a color conversion material mixed with an epoxy resin into the through hole;
Curing the color conversion material mixed with the epoxy resin, forming a through-hole having a smaller diameter than the through-hole formed in the other substrate in the cured color conversion material, thereby forming the other substrate. 5. The method according to claim 4, further comprising: forming a color conversion material layer having a uniform thickness in the formed through hole.