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JP2001298160A - Integrated circuit - Google Patents

Integrated circuit

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Publication number
JP2001298160A
JP2001298160A JP2000114913A JP2000114913A JP2001298160A JP 2001298160 A JP2001298160 A JP 2001298160A JP 2000114913 A JP2000114913 A JP 2000114913A JP 2000114913 A JP2000114913 A JP 2000114913A JP 2001298160 A JP2001298160 A JP 2001298160A
Authority
JP
Japan
Prior art keywords
temperature
circuit
lsi
correction value
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000114913A
Other languages
Japanese (ja)
Inventor
Kiwamu Nakayama
究 中山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2000114913A priority Critical patent/JP2001298160A/en
Publication of JP2001298160A publication Critical patent/JP2001298160A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K15/00Testing or calibrating of thermometers
    • G01K15/005Calibration

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

(57)【要約】 【課題】 LSI製造時に温度校正データをLSI内に
保存し、電子装置に組み込まれた後でも、人手介入なし
で、高精度のチップ温度測定を可能にする。 【解決手段】 電圧測定回路3は感熱素子2に定電流回路
4から電流を流し、電圧測定回路5で感熱素子2の両極間
の電圧を測定し、測定結果をAD変換回路7に出力し、
演算回路8では、AD変換回路7から出力される電圧デー
タと、不揮発生補正値保持回路6から出力される温度校
正データを入力し、校正された温度データを演算し、読
出インタフェース9を介して制御手段10に出力する。制
御手段10は冷却機構制御装置12を制御し冷却能力を上
げ、LSI1の温度を動作保証温度以内に制御し、ま
た、LSIを焼損等から保護するため、電源制御装置11
を制御し、電源を切る。保持回路6に格納する温度校正
データはLSI1に電源を供給する前に、感熱素子2の特
性を検査することにより取得しておく。
[PROBLEMS] To enable high-precision chip temperature measurement without manual intervention even after temperature calibration data is stored in an LSI at the time of manufacturing an LSI and incorporated into an electronic device. A voltage measuring circuit is a constant current circuit for a thermosensitive element.
4, a voltage is applied between the two electrodes of the thermosensitive element 2 by the voltage measuring circuit 5, and the measurement result is output to the AD conversion circuit 7,
The arithmetic circuit 8 receives the voltage data output from the AD conversion circuit 7 and the temperature calibration data output from the nonvolatile raw correction value holding circuit 6, calculates the calibrated temperature data, and Output to the control means 10. The control means 10 controls the cooling mechanism controller 12 to increase the cooling capacity, controls the temperature of the LSI 1 within the operation assurance temperature, and protects the LSI 1 from burnout.
Control and turn off the power. The temperature calibration data stored in the holding circuit 6 is obtained by inspecting the characteristics of the thermal element 2 before supplying power to the LSI 1.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、プロセッサユニッ
トやプロセッサモジュールなど電子装置内の集積回路
(以下、LSIと呼ぶ)内に設けた感熱素子の温度依存
性を利用して、LSIのチップ温度を測定し、該チップ
温度の測定データに基づき、例えば冷却ファンの回転を
制御する電子装置の温度測定系に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for controlling the temperature of an LSI chip by utilizing the temperature dependency of a heat-sensitive element provided in an integrated circuit (hereinafter referred to as an LSI) in an electronic device such as a processor unit or a processor module. The present invention relates to a temperature measurement system of an electronic device that measures and controls, for example, rotation of a cooling fan based on measurement data of the chip temperature.

【0002】[0002]

【従来の技術】従来の技術は、LSIを電子装置内に組
み込んだ後で、チップ温度測定を高精度に行いたい場
合、ユーザーが、LSI個々のバラツキに対する補正値
を与え、測定精度を向上していた。
2. Description of the Related Art In the prior art, when a chip temperature measurement is desired to be performed with high accuracy after an LSI is incorporated in an electronic device, a user gives a correction value for each LSI variation to improve the measurement accuracy. I was

【0003】[0003]

【発明が解決しようとする課題】上記従来技術では、ユ
ーザーが温度補正値を与えなければ高精度のチップ温度
測定が出来ないという問題があった。本発明の目的は、
LSI製造時に温度補正値をLSI内に保存し、電子装
置に組み込まれた後でも、人手介入なしで、高精度のチ
ップ温度測定を可能にすることにある。
In the above-mentioned prior art, there is a problem that high-precision chip temperature measurement cannot be performed unless a user gives a temperature correction value. The object of the present invention is
It is an object of the present invention to store a temperature correction value in an LSI at the time of manufacturing an LSI, and to enable a high-accuracy chip temperature measurement without manual intervention even after being incorporated in an electronic device.

【0004】[0004]

【課題を解決するための手段】上記目的を達成するた
め、本発明は、集積回路内に設けた感熱素子の電極間に
発生する電圧を測定し、感熱素子の温度依存性を利用し
て集積回路のチップ温度を測定する集積回路において、
前記感熱素子の電極間に発生する電圧を測定する測定手
段と、前記感熱素子の温度校正データを保持しデータの
書き込み可能な不揮発性補正値保持回路と、前記測定手
段の出力である電圧値と、前記不揮発性補正値保持回路
から出力される温度校正データを入力し、前記集積回路
の校正された温度データを算出し出力する演算回路を備
えるようにしている。また、前記不揮発性補正値保持回
路は、さらに温度閾値を保持し、前記演算回路は、前記
不揮発性補正値保持回路から出力される温度閾値をさら
に入力し、算出した校正された温度データが該温度閾値
より大きいとき一方の値を、大きくないとき他方の値を
出力するようにしている。また、前記演算回路は、前記
不揮発性補正値保持回路を内蔵するようにしている。
In order to achieve the above object, the present invention measures a voltage generated between electrodes of a thermal element provided in an integrated circuit, and integrates the voltage by utilizing the temperature dependency of the thermal element. In an integrated circuit that measures the chip temperature of a circuit,
Measuring means for measuring a voltage generated between the electrodes of the thermosensitive element, a nonvolatile correction value holding circuit capable of holding temperature calibration data of the thermosensitive element and writing data, and a voltage value which is an output of the measuring means; And an arithmetic circuit for inputting temperature calibration data output from the non-volatile correction value holding circuit, calculating and outputting calibrated temperature data of the integrated circuit. The nonvolatile correction value holding circuit further holds a temperature threshold, and the arithmetic circuit further inputs a temperature threshold output from the nonvolatile correction value holding circuit, and the calculated calibrated temperature data is One value is output when the temperature is larger than the temperature threshold, and the other value is output when the temperature is not larger. The arithmetic circuit includes the nonvolatile correction value holding circuit.

【0005】[0005]

【発明の実施の形態】以下、本発明の実施例を説明す
る。図1は本発明に係る集積回路(LSI)の実施例の
構成図である。図1に示すLSIは、LSI1内に設け
られた感熱素子2の順方向電圧を測定するための定電流
回路4及び電圧測定回路5を有する電圧測定手段3と、
感熱素子2の順方向電圧を事前に、温度校正のため、2
温度点以上で測定したデータまたは該測定したデータを
基に求めた補正用パラメータを温度校正用データとして
保持する不揮発性補正値保持回路6と、前記電圧測定手
段3にて測定された電圧値と前記不揮発性補正値保持回
路6に保持された温度校正用データに基づき温度を算出
する演算回路8と、前記演算回路8にて、算出された温
度データをLSI外部に出力するための読出しインタフ
ェース9をLSI内部に備えている。電子装置全体の制
御手段10は、前記LSIの読出インタフェース9より
出力されたデータをもとに、プロセッサユニット用電源
制御装置11や冷却機構制御装置12を制御する。
Embodiments of the present invention will be described below. FIG. 1 is a configuration diagram of an embodiment of an integrated circuit (LSI) according to the present invention. The LSI shown in FIG. 1 includes a voltage measuring means 3 having a constant current circuit 4 and a voltage measuring circuit 5 for measuring a forward voltage of the thermosensitive element 2 provided in the LSI 1,
The forward voltage of the thermosensitive element 2 is set in advance for temperature calibration.
A nonvolatile correction value holding circuit 6 for holding data measured at or above the temperature point or a correction parameter obtained based on the measured data as temperature calibration data, and a voltage value measured by the voltage measuring means 3 An arithmetic circuit 8 for calculating a temperature based on the temperature calibration data held in the nonvolatile correction value holding circuit 6, and a read interface 9 for outputting the calculated temperature data to the outside of the LSI by the arithmetic circuit 8; Is provided inside the LSI. The control means 10 of the entire electronic device controls the power supply control device 11 for the processor unit and the cooling mechanism control device 12 based on the data output from the read interface 9 of the LSI.

【0006】本実施例によれば、LSIの温度が、LS
Iの動作保証温度以上になった場合、冷却機構制御装置
12を制御し冷却能力を上げ、LSIの温度を動作保証
温度以内に制御することができる。また、最終手段とし
て、LSIを焼損等から保護するため、プロセッサユニ
ット用電源制御装置11を制御し、電源を切ることがで
きる。このように常時、チップの温度を監視できるた
め、電子装置の信頼性を向上することができる。
According to this embodiment, the temperature of the LSI is LS
When the temperature becomes equal to or higher than the operation guarantee temperature of I, the cooling mechanism controller 12 is controlled to increase the cooling capacity, and the temperature of the LSI can be controlled within the operation guarantee temperature. As a last resort, the power supply control device 11 for the processor unit can be controlled to turn off the power supply in order to protect the LSI from burnout and the like. As described above, since the temperature of the chip can be constantly monitored, the reliability of the electronic device can be improved.

【0007】次に、前記不揮発性補正値保持回路6に保
持される温度校正用データの取得と、該保持回路6への
温度校正用データの格納と、前記演算回路における温度
校正について詳細に説明する。図2は本発明に係るLS
Iの温度補正用データの取得および不揮発性補正値保持
回路への補正値の格納を説明するための図である。図3
は本発明に係るLSIの温度算出方法を示す図である。
温度校正のためには、まず、温度校正のために必要なデ
ータを求める。このデータを求めるために、LSI1に
電源を供給する前に、温度制御装置15及び温度測定器
16を用いて、低温にLSI1の温度を安定させ、LS
I1の端子から感熱素子2のみに一定量の電流を流し、
電極間に発生する電圧をLSI1の端子から読み出し装
置13により読み出し、測定する。このときの温度と電
圧は、図3のに示すように、TLowとVLowにな
る。次に、温度制御装置15及び温度測定器16を用い
て、高温にLSI1の温度を安定させ、LSI1の端子
から感熱素子2のみに一定量の電流を流し、電極間に発
生する電圧をLSI1の端子から読み出し装置13によ
り読み出し、測定する。このときの温度と電圧は、図3
のに示すように、THighとVHighになる。L
SI1に電源を供給する前に測定するためLSI1自身
の発熱はなく、測定結果にLSI1自身の発熱の影響は
ない。この4つの値が求まることにより、図3に示すよ
うに、(VLow,TLow)の点と(VHigh,T
High)の点を通るV−Tjの直線が求まり、感熱素
子2の電極間の電圧がVMeasのときのLSI1の温
度は、この直線からTMeasとして求まる。また、こ
の直線から温度換算式は、図3に示すように、 TMeas=a×(VMeas−VLow)+TLow となり、傾きaは、 a=(THigh−TLow)/(VHigh−VLow) となる。不揮発性補正値保持回路6に書き込む温度校正
用データは、例えば、上記のVLow、TLow、VH
igh、THighの組、あるいは、上記の傾きa、V
Low、TLowの組などである。次に、不揮発性補正
値保持回路6に温度校正用データを書き込み装置14を
用いてLSI1の端子から書き込む。
Next, acquisition of the temperature calibration data held in the nonvolatile correction value holding circuit 6, storage of the temperature calibration data in the holding circuit 6, and temperature calibration in the arithmetic circuit will be described in detail. I do. FIG. 2 shows the LS according to the present invention.
FIG. 9 is a diagram for describing acquisition of temperature correction data of I and storage of a correction value in a nonvolatile correction value holding circuit. FIG.
FIG. 3 is a diagram showing a method for calculating a temperature of an LSI according to the present invention.
For temperature calibration, first, data necessary for temperature calibration is obtained. In order to obtain this data, the temperature of the LSI 1 is stabilized at a low temperature by using the temperature control device 15 and the temperature measuring device 16 before the power is supplied to the LSI 1,
A certain amount of current flows only from the terminal of I1 to the thermosensitive element 2,
The voltage generated between the electrodes is read from the terminal of the LSI 1 by the reading device 13 and measured. At this time, the temperature and voltage become TLow and VLow, as shown in FIG. Next, the temperature of the LSI 1 is stabilized to a high temperature by using the temperature control device 15 and the temperature measuring device 16, a fixed amount of current flows from the terminal of the LSI 1 only to the thermosensitive element 2, and the voltage generated between the electrodes is The data is read from the terminal by the reading device 13 and measured. The temperature and voltage at this time are shown in FIG.
As shown in FIG. 7, the values are THigh and VHigh. L
Since the measurement is performed before power is supplied to the SI1, there is no heat generated by the LSI 1 itself, and the measurement result is not affected by the heat generated by the LSI 1 itself. By obtaining these four values, as shown in FIG. 3, the point of (VLow, TLow) and (VHigh, TLow)
A straight line of V-Tj passing through the High) point is obtained, and the temperature of the LSI 1 when the voltage between the electrodes of the thermal element 2 is VMeas is obtained as TMeas from this straight line. From this straight line, the temperature conversion formula is TMeas = a × (VMeas−VLow) + TLow, as shown in FIG. 3, and the slope a is a = (THHigh−TLow) / (VHigh−VLow). The temperature calibration data to be written into the nonvolatile correction value holding circuit 6 is, for example, the above-mentioned VLow, TLow, VH
pair of high and TH, or the gradients a and V described above.
For example, a combination of Low and TLow. Next, data for temperature calibration is written into the nonvolatile correction value holding circuit 6 from the terminal of the LSI 1 using the writing device 14.

【0008】上記の実施例では、演算回路8の出力は温
度データであるが、演算回路8の出力が、LSI1の温
度が予め定めた閾値以上の場合に一方の値(例えば、
‘1’)を取り、予め定めた閾値以上でない場合に他方
の値(例えば、‘0’)を取るようにしてもよい。この
場合には、不揮発性補正値保持回路6に、さらに閾値を
書き込み、保存しておき、演算回路8には算出された温
度データと閾値を比較し、比較結果として前記一方の値
または他方の値を出力する回路を設けるようにする。ま
た、不揮発性補正値保持回路6と演算回路8はそれぞれ
別々に設けられているが、演算回路8に不揮発性補正値
保持回路6が内蔵される構成にしてもよい。
In the above embodiment, the output of the arithmetic circuit 8 is temperature data. However, if the output of the arithmetic circuit 8 is equal to or higher than a predetermined threshold value,
'1') and the other value (for example, '0') may be taken if it is not equal to or greater than the predetermined threshold. In this case, the threshold value is further written and stored in the nonvolatile correction value holding circuit 6, and the calculated temperature data is compared with the threshold value in the arithmetic circuit 8, and the one value or the other is compared as a comparison result. A circuit for outputting a value is provided. Although the nonvolatile correction value holding circuit 6 and the arithmetic circuit 8 are provided separately, the configuration may be such that the nonvolatile correction value holding circuit 6 is built in the arithmetic circuit 8.

【0009】[0009]

【発明の効果】本発明によるLSIは、電子装置に組み
込まれた後でも、人手介入なしで、高精度にチップ温度
測定が行える。さらに、高精度の温度データをもとに各
種処理の実行を可能にできるため、電子装置の信頼性を
向上することができる。
The LSI according to the present invention can measure the chip temperature with high accuracy without any manual intervention even after being incorporated in an electronic device. Furthermore, since various processes can be executed based on highly accurate temperature data, the reliability of the electronic device can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係るLSIの実施例の構成を示す図で
ある。
FIG. 1 is a diagram showing a configuration of an embodiment of an LSI according to the present invention.

【図2】本発明に係るLSIの温度補正用データの取得
および不揮発性補正値保持回路への補正値の格納を説明
するための図である。
FIG. 2 is a diagram for explaining acquisition of temperature correction data of an LSI and storage of a correction value in a nonvolatile correction value holding circuit according to the present invention.

【図3】本発明に係るLSIの温度算出方法を示す図で
ある。
FIG. 3 is a diagram illustrating a method for calculating a temperature of an LSI according to the present invention.

【符号の説明】[Explanation of symbols]

1 LSI 2 感熱素子 3 電圧測定手段 4 定電流回路 5 電圧測定回路 6 不揮発性補正値保持回路 7 AD変換回路 8 演算回路 9 読出インタフェース 10 電子装置全体の制御手段 11 プロセッサユニット用電源制御装置 12 冷却機構制御装置 13 読み出し装置 14 書き込み装置 15 温度制御装置 16 温度測定器 DESCRIPTION OF SYMBOLS 1 LSI 2 Thermal element 3 Voltage measuring means 4 Constant current circuit 5 Voltage measuring circuit 6 Nonvolatile correction value holding circuit 7 A / D conversion circuit 8 Operation circuit 9 Readout interface 10 Control means for the whole electronic device 11 Power supply control device for processor unit 12 Cooling Mechanism control device 13 Reading device 14 Writing device 15 Temperature control device 16 Temperature measuring device

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 集積回路内に設けた感熱素子の電極間に
発生する電圧を測定し、感熱素子の温度依存性を利用し
て集積回路のチップ温度を測定する集積回路において、 前記感熱素子の電極間に発生する電圧を測定する測定手
段と、 前記感熱素子の温度校正データを保持しデータの書き込
み可能な不揮発性補正値保持回路と、 前記測定手段の出力である電圧値と、前記不揮発性補正
値保持回路から出力される温度校正データを入力し、前
記集積回路の校正された温度データを算出し出力する演
算回路を備えることを特徴とする集積回路。
1. An integrated circuit for measuring a voltage generated between electrodes of a thermosensitive element provided in an integrated circuit and measuring a chip temperature of the integrated circuit by utilizing a temperature dependency of the thermosensitive element. Measuring means for measuring a voltage generated between the electrodes; a non-volatile correction value holding circuit capable of holding temperature calibration data of the thermosensitive element and writing data; a voltage value which is an output of the measuring means; An integrated circuit, comprising: an arithmetic circuit that inputs temperature calibration data output from a correction value holding circuit, calculates and outputs calibrated temperature data of the integrated circuit.
【請求項2】 請求項1記載の集積回路において、 前記不揮発性補正値保持回路は、さらに温度閾値を保持
し、 前記演算回路は、前記不揮発性補正値保持回路から出力
される温度閾値をさらに入力し、算出した校正された温
度データが該温度閾値より大きいとき一方の値を、大き
くないとき他方の値を出力することを特徴とする集積回
路。
2. The integrated circuit according to claim 1, wherein said nonvolatile correction value holding circuit further holds a temperature threshold, and said arithmetic circuit further sets a temperature threshold output from said nonvolatile correction value holding circuit. An integrated circuit which outputs one value when the input and calculated calibrated temperature data is larger than the temperature threshold value, and outputs the other value when it is not larger.
【請求項3】 請求項1または請求項2記載の集積回路
において、 前記演算回路は、前記不揮発性補正値保持回路を内蔵す
ることを特徴とする集積回路。
3. The integrated circuit according to claim 1, wherein the arithmetic circuit includes the nonvolatile correction value holding circuit.
JP2000114913A 2000-04-17 2000-04-17 Integrated circuit Pending JP2001298160A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000114913A JP2001298160A (en) 2000-04-17 2000-04-17 Integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000114913A JP2001298160A (en) 2000-04-17 2000-04-17 Integrated circuit

Publications (1)

Publication Number Publication Date
JP2001298160A true JP2001298160A (en) 2001-10-26

Family

ID=18626642

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000114913A Pending JP2001298160A (en) 2000-04-17 2000-04-17 Integrated circuit

Country Status (1)

Country Link
JP (1) JP2001298160A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004080142A1 (en) * 2003-03-04 2004-09-16 Matsushita Electric Industrial Co., Ltd. Cooler
JP2008187726A (en) * 2008-02-21 2008-08-14 Sanyo Electric Co Ltd Semiconductor integrated circuit device and manufacturing method thereof
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