JP2001291809A - Heat dissipation components - Google Patents
Heat dissipation componentsInfo
- Publication number
- JP2001291809A JP2001291809A JP2000106102A JP2000106102A JP2001291809A JP 2001291809 A JP2001291809 A JP 2001291809A JP 2000106102 A JP2000106102 A JP 2000106102A JP 2000106102 A JP2000106102 A JP 2000106102A JP 2001291809 A JP2001291809 A JP 2001291809A
- Authority
- JP
- Japan
- Prior art keywords
- base plate
- circuit board
- composite
- aluminum
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【0001】[0001]
【発明が属する技術分野】本発明は、セラミックス回路
基板を用いた混成集積回路の放熱用に適用される炭化け
い素−アルミニウム質複合体からなる放熱部品に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat dissipating component comprising a silicon carbide-aluminum composite, which is used for dissipating heat in a hybrid integrated circuit using a ceramic circuit board.
【0002】[0002]
【従来の技術】半導体素子の高集積化、大型化に伴い、
半導体素子等の電子部品や回路からの発熱量は増加の一
途をたどっている。そこで、熱の放散を十分に行うため
に、高絶縁性でしかも高放熱性を有するセラミックス回
路基板が使用されている。2. Description of the Related Art As semiconductor devices become more highly integrated and larger,
The amount of heat generated from electronic components such as semiconductor elements and circuits has been steadily increasing. Therefore, in order to sufficiently dissipate heat, a ceramic circuit board having high insulation and high heat dissipation is used.
【0003】特に、窒化アルミニウム回路基板は、10
0W/mK以上の高熱伝導率を有し、しかも熱膨張率が
シリコンに近いことから、とくに大電力用途には多用さ
れている。[0003] In particular, aluminum nitride circuit boards are 10
Since it has a high thermal conductivity of 0 W / mK or more and has a thermal expansion coefficient close to that of silicon, it is widely used especially for high power applications.
【0004】窒化アルミニウム回路基板は、窒化アルミ
ニウム基板に、活性金属法またはDBC法により半導体
素子等の電子部品を接合した銅回路を設けたものであ
る。[0004] The aluminum nitride circuit board is provided with a copper circuit in which electronic components such as semiconductor elements are joined to an aluminum nitride board by an active metal method or a DBC method.
【0005】図1は、前記窒化アルミニウム回路基板を
始めとするセラミックス回路基板を実用に供するとき、
セラミックス回路基板上の電子部品等から発生する熱を
放熱させるための代表的な放熱構造を示している。[0005] FIG. 1 is a diagram showing a practical use of ceramic circuit boards including the aluminum nitride circuit board.
1 shows a typical heat dissipation structure for dissipating heat generated from electronic components and the like on a ceramic circuit board.
【0006】即ち、放熱フィン4の上に、ヒートシンク
3を、更にその上に、半導体素子等の電子部品1を回路
等の所望位置に搭載したセラミックス回路基板2を搭載
した構造を有する。尚、電子部品1とセラミックス回路
基板上の回路との間、セラミックス回路基板2とヒート
シンク3との間は、必要に応じて、半田やロウ材等の接
合材により接合される。又、前記の放熱フィンやヒート
シンクは、安価で熱伝導性が高い金属である銅、アルミ
ニウム等からなることが一般的である。That is, the heat sink 3 is mounted on the radiating fins 4, and the ceramic circuit board 2 on which the electronic component 1 such as a semiconductor element is mounted at a desired position such as a circuit is mounted thereon. The electronic component 1 and the circuit on the ceramic circuit board, and the ceramic circuit board 2 and the heat sink 3 are joined by a joining material such as solder or brazing material as needed. The heat radiation fins and heat sinks are generally made of inexpensive metals having high thermal conductivity, such as copper and aluminum.
【0007】前記の放熱構造を作製するにあたっては、
ヒートシンクより上の構造部分が予め組立られたのち、
更に、これらと放熱フィンとが高熱伝導性のグリースを
介してネジ止めにより固定されるのが一般的であるが、
この際、高放熱性を維持するためには、放熱フィン4と
ヒートシンク3(ベ−ス板とも呼ばれる)とがグリース
を介して十分に密着していることが必要である。In manufacturing the heat dissipation structure,
After the structure above the heat sink is pre-assembled,
Furthermore, it is general that these and the radiation fins are fixed by screws with high thermal conductivity grease.
At this time, in order to maintain high heat radiation, it is necessary that the heat radiation fins 4 and the heat sink 3 (also called a base plate) are sufficiently adhered via grease.
【0008】しかし、従来から使用されてきた銅製のベ
−ス板とセラミックス回路基板を接合させた構造におい
ては、両者を接合する半田層にクラックが発生する、い
わゆる半田クラックが発生する問題があった。半田層は
使用環境下で熱膨張係数の大きな銅ベ−ス板(17pp
m/K)とセラミックス基板の熱膨張係数差により発生
する応力を吸収、緩和させる機能を果たしているが、高
温低温を繰り返すサイクルが増加していくと疲労のため
クラックが発生したり、更に進展して放熱構造体が破壊
してしまったり、放熱特性が低下する等、信頼性が劣化
する問題がある。However, the conventional structure in which a copper base plate and a ceramic circuit board are joined together has a problem in that cracks occur in the solder layer joining them, so-called solder cracks. Was. The solder layer is a copper base plate (17pp
m / K) and the thermal expansion coefficient of the ceramic substrate, which absorbs and relaxes the stress. However, as the number of cycles of high temperature and low temperature increases, cracks occur due to fatigue, and the cracks develop further. Therefore, there is a problem that reliability is deteriorated, for example, the heat radiation structure is broken or heat radiation characteristics are deteriorated.
【0009】このため、高熱伝導性を有し、かつ熱膨張
係数が銅のそれに比べ小さく、セラミックス基板のそれ
に近いベ−ス板等の放熱部品材の開発が望まれ、アルミ
ニウムと炭化けい素からなる複合体(アルミニウム−炭
化けい素複合体)が開発されている。アルミニウムと炭
化けい素からなる複合体は、熱膨張係数が8ppm/K
程度と従来の銅の17ppm/Kよりかなり小さく、上
記半田クラックの問題点を解決し得る放熱部材として注
目されている。For this reason, it is desired to develop a heat-dissipating component material such as a base plate having a high thermal conductivity and a coefficient of thermal expansion smaller than that of copper and close to that of a ceramic substrate. Composites (aluminum-silicon carbide composites) have been developed. The composite consisting of aluminum and silicon carbide has a coefficient of thermal expansion of 8 ppm / K
It is considerably smaller than the conventional copper of 17 ppm / K, and is attracting attention as a heat dissipating member capable of solving the problem of the solder crack.
【0010】しかし、本発明者の検討によれば、前記の
アルミニウム−炭化けい素複合体からなる放熱部品にお
いても、未だ実用に供するにはいくつかの課題を解決す
る必要があることがわかってきた。However, according to the study of the present inventor, it has been found that some problems must be solved even in the heat-dissipating component composed of the above-described aluminum-silicon carbide composite before it can be put to practical use. Was.
【0011】まず、第1に、アルミニウム−炭化けい素
質複合体の熱伝導率は、銅のそれの半分程度と小さく、
これを向上することが課題である。この課題について
は、最近では200W/mKを越す熱伝導率を有するも
のが開発されてきている。First, the thermal conductivity of the aluminum-silicon carbide composite is as small as about half that of copper.
The challenge is to improve this. Regarding this problem, one having a thermal conductivity exceeding 200 W / mK has recently been developed.
【0012】第2は、半導体素子から放熱フィンに至る
一連の構造において、いかに熱を放散しやすい構造を達
成するかであり、前記アルミニウム−炭化けい素質複合
体からなる放熱部品に、あらかじめ反りを付け、ベース
板と放熱フィンとの間の密着性を向上することで、放熱
特性を確保しようというものであり、本発明の解決する
べき課題である。The second is how to achieve a structure that easily dissipates heat in a series of structures from the semiconductor element to the heat radiation fins. The heat radiation component made of the aluminum-silicon carbide composite is warped in advance. The purpose of the present invention is to secure the heat radiation characteristics by improving the adhesion between the base plate and the heat radiation fins, which is a problem to be solved by the present invention.
【0013】従来の方法では、反りのない或いは少ない
ベ−ス板が指向されてきたが、平らな面を有するベース
板を用いて、セラミックス回路基板とベース板とを接合
したときに、ベ−ス板とセラミックス回路基板との熱膨
張差に原因して発生する応力のために、ベ−ス板の放熱
フィンと密着させる側の面が凹型に反ってしまう。この
ため、次工程で、放熱フィンにセラミックス回路基板が
固定されているベ−ス板を固定する際に、十分な接触面
積が取れず、満足な放熱性を有し、実用条件下で良好な
放熱性を維持できる放熱構造体を得るまでには至ってい
ない。In the conventional method, a base plate having no or little warping has been directed. However, when a ceramic circuit board and a base plate are joined by using a base plate having a flat surface, the base plate is bent. Due to the stress generated due to the difference in thermal expansion between the base plate and the ceramic circuit board, the surface of the base plate that is brought into close contact with the radiating fins is warped in a concave shape. For this reason, in the next step, when fixing the base plate on which the ceramic circuit board is fixed to the radiation fins, a sufficient contact area cannot be obtained, the heat radiation fins have satisfactory heat radiation properties, and the The heat dissipation structure that can maintain the heat dissipation has not yet been obtained.
【0014】上記の問題を解決する手段として、本出願
人は、予めベ−ス板の放熱フィンと密着させる側の面を
凸型に反らしておき、セラミックス基板接合後も、放熱
フィンと密着させる側の面を凸型の反りのまま維持させ
ておき、これを放熱フィンにネジ止めにより固定し十分
な接触面積を確保しつつ放熱を図ることを検討してき
た。As a means for solving the above problem, the present applicant previously warps the surface of the base plate to be in close contact with the radiating fins into a convex shape, and makes the base plate adhere to the radiating fins even after joining the ceramic substrate. It has been considered that the side surface is maintained as a convex warp, and this is fixed to a radiating fin by screwing to secure a sufficient contact area to release heat.
【0015】これまでに、反りを有するアルミニウム−
炭化けい素質複合体(以下、複合体という)の作製方法
について、本出願人は様々な提案をしてきており、作製
後の前記複合体に機械加工を施し反りを付与する方法、
複合体の表裏にアルミニウム層を被覆した複合体におい
ては、複合体作製時表裏のアルミニウム層の厚みを変
え、表裏のアルミニウム厚み差から生じる応力により反
りを付与する方法、並びに複合体の分散相となっている
炭化けい素質プリフォームの密度や組成をあらかじめ傾
斜させたのち複合体を作製、組成差、密度差から反りを
付与する方法、さらには複合体に応力を掛けつつ加熱処
理し、塑性変形により反りを付ける方法等を提案してき
た。So far, warped aluminum
The present applicant has made various proposals on a method for producing a silicon carbide composite (hereinafter, referred to as a composite), and a method of subjecting the composite after the production to machining to impart warpage,
In a composite in which the aluminum layer is coated on the front and back of the composite, the thickness of the aluminum layer on the front and back is changed during the production of the composite, and a method of imparting warpage by stress generated from the difference in the aluminum thickness on the front and back, and the dispersed phase of the composite A method of preparing a composite after pre-grading the density and composition of the preformed silicon carbide preform, giving a warp from the difference in composition and density, and further subjecting the composite to heat treatment while applying stress and plastic deformation Have proposed a method of warping.
【0016】[0016]
【発明が解決しようとする課題】しかしながら、上記し
た方法等により作製される、反りを有するベ−ス板にお
いては、その反りの形状(面の反り方)は様々である。
そのため、実際にセラミックス回路基板接合などの実装
工程を経たのちの前記ベ−ス板の形状は、放熱フィンと
密着させる側の面を凸型の反りのまま維持するという目
的を十分には達成できない状況が度々発生している。However, in a warped base plate manufactured by the above-described method or the like, the shape of the warp (how the surface is warped) is various.
Therefore, the shape of the base plate after the actual mounting process such as bonding of the ceramic circuit board cannot sufficiently achieve the purpose of maintaining the surface on the side to be in close contact with the radiation fins in a convex warpage. The situation is happening frequently.
【0017】図2は上述の状況を説明する図である。セ
ラミックス回路基板接合後、放熱フィンと密着させる側
の面が全体的には凸型の反りとなっているものの、放熱
フィンにネジ止めした際、十分な密着がとれない典型的
な反り形状を示したものであり、基板を接合した箇所の
外周部が凹側に反ってしまったため、ネジ止めが十分に
効かない従来例を示している。FIG. 2 is a diagram for explaining the above situation. After the ceramic circuit board is joined, the surface on the side that is in close contact with the radiation fins has a convex warp overall, but shows a typical warp shape that does not provide sufficient adhesion when screwed to the radiation fins This shows a conventional example in which screwing does not work effectively because the outer peripheral portion of the portion where the substrates are joined has warped to the concave side.
【0018】[0018]
【課題を解決するための手段】本発明者らは、ベース板
と放熱フィンとの密着性について、全体には凸型ではあ
るが、様々な反り形状を有するベ−ス板を作製し、回路
基板接合を行い、接合後の反り形状を測定するととも
に、面内での前記凹部の発生の有無を評価した結果、回
路基板接合前の状態で、ある特定形状を有するものが、
回路基板接合後も面内での前記凹部が発生せず凸型を維
持していること、そして、本来の熱放散性に極めて近い
特性を有し、それを維持する放熱構造体を得ることがで
きるという知見を得て、本発明を完成させたものであ
る。Means for Solving the Problems The inventors of the present invention have prepared a base plate having various warping shapes, although it is entirely convex, with respect to the adhesion between the base plate and the radiation fins. Performing the board joining, and measuring the warped shape after the joining, as a result of evaluating the presence or absence of the concave portion in the plane, in the state before the circuit board joining, those having a certain specific shape,
Even after the circuit board is joined, the concave portion does not occur in the plane and the convex shape is maintained, and a heat radiation structure having characteristics very close to the original heat dissipation property and maintaining the same is obtained. The present inventors have obtained the knowledge that the present invention can be performed, and completed the present invention.
【0019】即ち、本発明は、炭化珪素質多孔体にアル
ミニウムを主成分とする金属を含浸してなる金属−セラ
ミックス複合体からなる放熱部品であって、一主面上に
任意の2点をとったときに、前記2点の間に位置する主
面が正の曲率半径を有する平板状であることを特徴とす
る放熱部品である。That is, the present invention relates to a heat-dissipating component comprising a metal-ceramic composite in which a silicon carbide-based porous body is impregnated with a metal containing aluminum as a main component. When taken, the heat radiating component is characterized in that the main surface located between the two points is a flat plate having a positive radius of curvature.
【0020】[0020]
【発明の実施の形態】本発明の放熱部品は、基板接合前
段階におけるベ−ス板の反り形状を前記のとおりに特定
しているので、その結果として、セラミックス回路基板
接合後のベ−ス板の状態が、放熱フィン等の冷却部品と
接触する面側が凸型の反りとなり、かつ前記面内で部分
的凹部が発生しない特徴を有すること、そして、前記特
徴を有するが故に、半田クラック等の異常なしに、ベー
ス板と放熱フィンとの密着を高めることができ、本来の
熱放散性に極めて近い放熱性を示し、これを維持できる
放熱構造体を容易に得ることができる。DESCRIPTION OF THE PREFERRED EMBODIMENTS In the heat-radiating component of the present invention, the warped shape of the base plate before the substrate bonding is specified as described above. As a result, the base after the ceramic circuit substrate bonding is completed. The state of the plate is such that a surface side in contact with a cooling component such as a radiation fin has a convex warpage, and has a feature in which a partial concave portion does not occur in the surface. Therefore, the close contact between the base plate and the radiating fins can be enhanced, and a heat radiating structure exhibiting a heat radiating property very close to the original heat radiating property and maintaining this can be easily obtained.
【0021】本発明者は、凸型ではあるが、いろいろ反
り形状を有するベ−ス板を作製し、回路基板接合を行
い、接合後の反り形状を測定し、面内での凹部の発生の
有無を調べた結果、回路基板接合前の状態で直線的な部
分が含まれる反り形状を有するものは、前記直線部分か
ら凹部を発生することがあること、そして、図3のよう
に、少なくとも面内のいずれの箇所でも凸型となってい
るという要件、即ち、一主面上に任意の2点をとったと
きに、前記2点の間に位置する主面が正の曲率半径を有
する平板状であるという要件を満足するときにのみ、ベ
ース板と放熱フィン等の放熱部品間の密着が良好とな
り、放熱構造の本来の特性を発揮できるということを見
い出したものである。The present inventor has prepared a base plate having a convex shape but various warp shapes, joined the circuit boards, measured the warped shape after the joining, and determined the occurrence of concave portions in the plane. As a result of examining the presence / absence, the one having a warped shape including a linear portion before joining the circuit board may generate a concave portion from the linear portion, and as shown in FIG. , That is, a flat plate whose main surface located between two points has a positive radius of curvature when any two points are taken on one main surface. It has been found that the adhesion between the base plate and the heat radiating components such as the heat radiating fins becomes good only when the requirement of the heat radiating structure is satisfied, and the original characteristics of the heat radiating structure can be exhibited.
【0022】本発明において、反りの絶対量、即ち反り
量については、その定義の仕方が様々であるために一義
的には決められないが、例えば、代表的な反り量の定義
を示せば、ベ−ス板の長手方向に平行でベ−ス板の中心
を通る線について、ベ−ス板の両端の高さを測定し、各
々の高さを零としたときの、両端間に挟まれる線分上の
点の高さで最も高い値をもって反り量とする方法、同様
な手法にて、短手方向や対角線方向について反り量をと
る方法などがある。In the present invention, the absolute amount of warpage, that is, the amount of warpage, cannot be uniquely determined due to various definitions. For example, if a typical definition of the amount of warpage is given, For a line parallel to the longitudinal direction of the base plate and passing through the center of the base plate, the height of both ends of the base plate is measured, and when the height of each is set to zero, the line is sandwiched between both ends. There is a method in which the highest value of the heights of the points on the line segment is used as the amount of warpage, and a method of obtaining the amount of warp in the short direction or diagonal direction by a similar method.
【0023】本発明において、反り量をどの程度にする
かについては、ベ−ス板の面積、厚み及び接合されるセ
ラミックス回路基板の材質、形状、厚み及びその他の搭
載される部品により実験的に決定すればよい。その際、
セラミックス回路基板接合後、放熱フィン等の放熱部品
を接着する側のベ−ス板の面が凹型の反りにならないよ
う反り量を決める必要がある。ベ−ス板が適正な反り量
を有していれば、本発明の反り形状を有するベ−ス板は
凹型の反りにならないとともに、面内に凹部は生じな
い。In the present invention, the degree of warpage is determined experimentally by the area and thickness of the base plate, the material, shape and thickness of the ceramic circuit board to be joined, and other mounted parts. You only have to decide. that time,
After joining the ceramic circuit boards, it is necessary to determine the amount of warping so that the surface of the base plate to which the heat radiating components such as the heat radiating fins are bonded does not become concave. If the base plate has an appropriate amount of warpage, the warped base plate of the present invention will not be concavely warped, and no in-plane recess will be formed.
【0024】本発明者の実験的検討結果に基づけば、例
えば、ベ−ス板の寸法が120×80mmで厚みが4m
mであり、回路基板が銅回路板が形成されている窒化ア
ルミニウム基板であって、その寸法が70×50mmで
厚みが0.65mmの窒化アルミニウムに、厚み0.3
mmの回路が形成されている場合、ベ−ス板の好適な反
り量は、長手方向で50〜200μm、短手方向で50
〜150μmである。According to the experimental results of the present inventors, for example, the size of the base plate is 120 × 80 mm and the thickness is 4 m.
m, and the circuit board is an aluminum nitride substrate on which a copper circuit board is formed, the dimensions of which are: 70 × 50 mm, 0.65 mm thick aluminum nitride;
When a circuit of mm is formed, the suitable amount of warpage of the base plate is 50 to 200 μm in the longitudinal direction and 50 in the transverse direction.
150150 μm.
【0025】本発明の放熱部品を作製する方法として
は、前述した通りに、作製後の炭化けい素−アルミニウ
ム質複合体に機械加工を施し反りを付与する方法、複合
体の表裏にアルミニウム層を被覆した複合体において
は、複合体作製時表裏のアルミニウム層の厚みを変え、
表裏のアルミニウム層の厚み差から生じる応力により反
りを付与する方法、或いは複合体の分散相となっている
炭化けい素質プリフォームの密度や組成をあらかじめ傾
斜させたのち複合体を作製し、組成差、密度差に原因し
て反りを付与する方法、さらには複合体に応力を掛けつ
つ加熱処理し、塑性変形させ反りを付ける方法等のいず
れの方法でも構わない。As described above, the method of manufacturing the heat radiating component of the present invention includes a method in which the silicon carbide-aluminum composite after fabrication is machined to impart a warp, and an aluminum layer is formed on both sides of the composite. In the coated composite, change the thickness of the aluminum layer on the front and back during composite production,
A method of imparting warpage by the stress resulting from the thickness difference between the front and back aluminum layers, or preparing a composite after preliminarily inclining the density and composition of the silicon carbide preform that is the dispersed phase of the composite, Any method may be used, such as a method of giving a warp due to a difference in density, or a method of applying a stress to a composite body, performing a heat treatment, plastically deforming and giving a warp.
【0026】本発明の反り形状を有するベ−ス板の作製
方法について、その一例として、前記の複合体に応力を
掛けつつ加熱処理し、塑性変形させることにより反りを
形成する方法を例示する。As an example of the method for producing a warped base plate of the present invention, a method of forming a warp by applying heat to the above-mentioned composite while applying a stress to the composite and plastically deforming the composite will be exemplified.
【0027】本発明に用いる炭化けい素質プリフォーム
を作製する方法としては、炭化けい素粉末と有機バイン
ダー及び焼成後の強度を維持するために無機バインダー
等を混合した混合粉末を成形後、空気中もしくは不活性
雰囲気中で焼成しプリフォーム化する方法、前記混合粉
末にさらに水や溶剤及び可塑剤、分散剤等を添加し混練
後、押し出し成形、焼成する方法、前記混合物を低粘度
化し、型に注入成形し、焼成するインジェクション法
等、公知の方法が採用できる。As a method for producing a silicon carbide preform used in the present invention, a mixed powder in which a silicon carbide powder is mixed with an organic binder and an inorganic binder to maintain the strength after firing is formed, and then mixed in air. Or a method of baking in an inert atmosphere to form a preform, a method of adding water, a solvent and a plasticizer, a dispersant, etc. to the mixed powder, kneading, extruding, baking, reducing the viscosity of the mixture, A publicly known method such as an injection method of injecting and baking the mixture, followed by firing can be employed.
【0028】高い熱伝導率を有し、かつ低熱膨張率を有
するアルミニウム−炭化けい素質複合体を得るには、前
記のいずれの方法でプリフォームを作製するにしても、
プリフォームの相対密度を50%以上、より好ましくは
60%以上とすることが望ましい。そして、そのため
に、炭化けい素原料として異なった粒度分布を有する2
種以上の原料粉末を適宜混合することが効果的である。In order to obtain an aluminum-silicon carbide composite having a high thermal conductivity and a low coefficient of thermal expansion, a preform may be prepared by any of the above methods.
It is desirable that the relative density of the preform be 50% or more, more preferably 60% or more. And, for that purpose, the silicon carbide raw material having a different particle size distribution 2
It is effective to appropriately mix more than one kind of raw material powder.
【0029】炭化けい素プリフォームにアルミニウムを
主成分とする金属を含浸させ複合体とする方法として
は、炭化けい素質プリフォームに溶融アルミニウムを流
し込み高圧プレスしつつ含浸する、いわゆる溶湯鍛造法
や、プリフォームに急速にアルミニウムを注入含浸し複
合体を形成するダイカスト法、並びに炭化けい素とアル
ミニウム粉を混合、成形し、焼結することにより緻密体
を作製する粉末冶金法等の従来より公知の方法が採用で
きる。また、前記方法で製造された前記複合体の表面性
状については、複合体組織が表面に出ていても、表面ま
たはその一部がアルミニウムで被覆されていてもよい
が、溶湯鍛造法は、炭化けい素の相対密度が60〜80
%と高いプリフォームを用いることができ、その結果、
160〜200W/mK程度の高熱伝導率を有する複合
体を容易に得ることができる特徴があり、好ましい。As a method of impregnating a silicon carbide preform with a metal containing aluminum as a main component to form a composite, a so-called melt forging method in which molten aluminum is poured into a silicon carbide preform and impregnated with high pressure, Conventionally known methods include a die casting method for rapidly injecting and impregnating aluminum into a preform to form a composite, and a powder metallurgy method for producing a dense body by mixing, molding and sintering silicon carbide and aluminum powder. The method can be adopted. Regarding the surface properties of the composite produced by the above method, the composite structure may be exposed on the surface, or the surface or a part thereof may be coated with aluminum. Relative density of silicon is 60-80
% Of the preform can be used, and as a result,
It is preferable because it has a feature that a composite having a high thermal conductivity of about 160 to 200 W / mK can be easily obtained.
【0030】以下、本発明のアルミニウムー炭化けい素
質複合体の製造について、溶湯鍛造法による方法を通じ
て、より具体的に説明する。Hereinafter, the production of the aluminum-silicon carbide composite of the present invention will be described in more detail by way of a melt forging method.
【0031】前記方法で作製された炭化けい素質プリフ
ォームを、金型内にセットしたのち、金型内に溶融アル
ミニウムを投入し、前記溶融アルミニウムをプレスする
ことにより、プリフォームの空隙内にアルミニウムを含
浸し、その状態で冷却することで、アルミニウム−炭化
けい素質複合体を得ることができる。After the silicon carbide preform prepared by the above method is set in a mold, molten aluminum is charged into the mold, and the molten aluminum is pressed. , And cooling in that state, an aluminum-silicon carbide composite can be obtained.
【0032】前記操作において、含浸を円滑に行うた
め、プリフォームは予め予熱される。また、含浸するア
ルミニウム原料としては、低溶融温度化、含浸のしやす
さ及び得られる複合体の機械特性の向上等を目的に、け
い素を5〜14質量%含有するアルミニウム−けい素系
合金やさらにプリフォームとの濡れ性向上を目的として
マグネシウムを0.1〜2.0質量%まで添加したアル
ミニウム−けい素−マグネシウム系合金等が使用され
る。いずれの合金を使用するかは任意に選択できるが、
一般には800℃〜900℃で溶融した前記アルミニウ
ム合金が含浸される。In the above operation, the preform is preheated in advance for smooth impregnation. The aluminum material to be impregnated is an aluminum-silicon alloy containing 5 to 14% by mass of silicon for the purpose of lowering the melting temperature, facilitating the impregnation, and improving the mechanical properties of the obtained composite. Further, an aluminum-silicon-magnesium alloy to which magnesium is added in an amount of 0.1 to 2.0% by mass for the purpose of further improving the wettability with the preform is used. Which alloy to use can be selected arbitrarily,
Generally, the aluminum alloy melted at 800 ° C. to 900 ° C. is impregnated.
【0033】上記方法で作製されたアルミニウム−炭化
けい素質複合体は、そのままの状態、もしくはその後所
定の形状にその表面及び外周を加工されて、所望形状を
有するがほとんど反りのないベ−ス板となる。The aluminum-silicon carbide composite produced by the above method is processed as it is, or after its surface and outer periphery are processed into a predetermined shape, to obtain a base plate having a desired shape but almost no warpage. Becomes
【0034】次に、前記ベ−ス板に反りを付与する。そ
の方法としては、当該ベ−ス板表面の一部若しくは全面
に応力を負荷しつつ加熱することにより、塑性変形を起
こさせれば良い。この際、応力をどのような方法で負荷
するかは実験的に定めれば良いが、本発明の反り形状に
するためには、球面形状或いは所望方向について曲率半
径を一定にした凸面と凹面を有する型を用い、両面間に
ベース板を挟み、荷重をかけることが好ましい。Next, the base plate is warped. As a method thereof, plastic deformation may be caused by heating while applying a stress to a part or the entire surface of the base plate. At this time, the method of applying the stress may be determined experimentally, but in order to obtain the warped shape of the present invention, the convex surface and the concave surface having a constant radius of curvature in a spherical shape or a desired direction are used. It is preferable to apply a load by using a mold having a base plate sandwiched between both surfaces.
【0035】加熱処理は、300℃以上の温度、好まし
くは350℃以上の温度で行うのがよい。300℃未満
の温度では、いくら応力を付与しても変形しにくいから
であり、350℃を越える温度で加熱すると容易に変形
が起こり、生産性に優れる。加熱温度の上限については
特に規定しないが、複合体を構成しているアルミニウム
成分が溶融する温度未満で行うことはいうまでもない。The heat treatment is performed at a temperature of 300 ° C. or more, preferably 350 ° C. or more. If the temperature is less than 300 ° C., the material is not easily deformed even if stress is applied. If heated at a temperature exceeding 350 ° C., the material is easily deformed and the productivity is excellent. Although the upper limit of the heating temperature is not particularly limited, it goes without saying that the heating is performed at a temperature lower than the temperature at which the aluminum component constituting the composite is melted.
【0036】[0036]
【実施例】以下、実施例により本発明を説明する。 〔実施例1〕相対密度が65%の炭化けい素からなる厚
み4.3mmのプリフォ−ムを金型内にセットし、12
重量%のけい素と0.5%のマグネシウムを含有する溶
融アルミニウムを前記金型内に注入し、高圧プレスする
ことにより、プリフォ−ム内の空隙にアルミニウム合金
を含浸してアルミニウム−炭化けい素質複合体を作製し
た。得られた複合体を加工することにより、寸法が12
0mm(長手方向)×80mm(短手方向)で厚みが4
mmのベ−ス板とした。なお、このときの表面組成はア
ルミニウム合金と炭化けい素からなっていた。The present invention will be described below with reference to examples. Example 1 A 4.3 mm-thick preform made of silicon carbide having a relative density of 65% was set in a mold.
Molten aluminum containing 5% by weight of silicon and 0.5% of magnesium is poured into the mold and pressed under high pressure to impregnate the voids in the preform with an aluminum alloy to form an aluminum-silicon carbide. A composite was made. By processing the resulting composite, a size of 12
0 mm (longitudinal direction) x 80 mm (short direction) and thickness 4
mm base plate. The surface composition at this time was composed of an aluminum alloy and silicon carbide.
【0037】次に、得られたベ−ス板に反りを付与する
ため、同一曲率で曲面を付けた凹凸型を準備した。この
凹面と凸面の間に前記したベ−ス板を入れ、締め込み治
具により締め上げ、ベ−ス板が凹凸型の曲面にならう状
態にした。次に、このような状態のベ−ス板を450
℃、1時間加熱後、冷却し、締め込みを解放後、反りを
測定した。Next, in order to give a warp to the obtained base plate, an uneven mold having a curved surface with the same curvature was prepared. The base plate described above was inserted between the concave surface and the convex surface, and the base plate was tightened by a tightening jig, so that the base plate was shaped into a concave and convex curved surface. Next, the base plate in such a state is removed by 450.
After heating at 1 ° C. for 1 hour, cooling, releasing the tightening, the warpage was measured.
【0038】反り測定は面粗さ計で行い、測定スパンは
長手方向で115mm、短手方向で75mmとした。な
お、長手方向、短手方向とも測定位置はベ−ス板の中心
を通るラインとした。反りを測定した結果、片面が長手
方向、短手方向とも凸型、反対面が凹型の反り形状を示
すとともに、セラミックス回路基板接合後、放熱フィン
等の放熱部品と接着させる凸面の測定ライン上のいずれ
の2点を零としても、その間の点はすべて正の高さとな
っていた。また、測定スパン両端の高さを零としたとき
の最大の高さ、すなわち反り量は、長手方向で151μ
m、短手方向で110μmであった。The warpage was measured by a surface roughness meter, and the measurement span was 115 mm in the longitudinal direction and 75 mm in the transverse direction. The measurement position in both the longitudinal and transverse directions was a line passing through the center of the base plate. As a result of measuring the warpage, one surface has a convex shape in both the longitudinal direction and the short direction, and the opposite surface has a concave warp shape, and after bonding the ceramic circuit board, on the convex measuring line to be bonded to a heat radiating component such as a heat radiating fin. Regardless of which two points were zero, all points in between had positive heights. The maximum height when the height of both ends of the measurement span is zero, that is, the amount of warpage is 151 μm in the longitudinal direction.
m, and 110 μm in the transverse direction.
【0039】次に、前記ベ−ス板にニッケルメッキを施
したのち、ベ−ス板の凹面側に窒化アルミニウム回路基
板を半田付けした。半田付けに際しては、ベ−ス板の長
手方向と窒化アルミニウム回路基板の長手方向が平行に
なるようにするとともに、回路基板をベ−ス板の中央に
配置した。なお、ここで使用した窒化アルミニウム回路
基板は、寸法が70mm×50mmであり厚みが0.6
5mmの窒化アルミニウム基板に0.3mmの銅板を接
合し回路を形成したものである。Next, after nickel plating was applied to the base plate, an aluminum nitride circuit board was soldered to the concave side of the base plate. At the time of soldering, the longitudinal direction of the base plate was made parallel to the longitudinal direction of the aluminum nitride circuit board, and the circuit board was arranged at the center of the base plate. The aluminum nitride circuit board used here had dimensions of 70 mm × 50 mm and a thickness of 0.6 mm.
A circuit is formed by bonding a 0.3 mm copper plate to a 5 mm aluminum nitride substrate.
【0040】セラミックス回路基板を半田付けしたベ−
ス板について、回路基板接合を行っていない側の面の反
りを測定した。 反り測定は、測定面を上に向けて状態
で面粗さ計により行い、測定スパンは長手方向で115
mm、短手方向で75mmとした。なお、長手方向、短
手方向とも測定位置はベ−ス板の中心を通るラインとし
た。反りを測定した結果、長手方向、短手方向とも凸型
(すなわち正)の反り形状を示すとともに、測定ライン
上のいずれの2点を零としても、その間の点はすべて正
の高さを示し、測定スパン両端の高さを零としたときの
最大の高さ、すなわち反り量は、長手方向で52μm、
短手方向で39μmであった。A base to which a ceramic circuit board is soldered
The warpage of the surface of the substrate not bonded to the circuit board was measured. The warp measurement is performed by a surface roughness meter with the measurement surface facing upward, and the measurement span is 115 in the longitudinal direction.
mm, and 75 mm in the lateral direction. The measurement position in both the longitudinal and transverse directions was a line passing through the center of the base plate. As a result of the measurement of the warp, both the longitudinal direction and the transverse direction show a convex (ie, positive) warp shape, and even if any two points on the measurement line are set to zero, all points between them show a positive height. The maximum height when the height at both ends of the measurement span is zero, that is, the amount of warpage is 52 μm in the longitudinal direction,
It was 39 μm in the transverse direction.
【0041】更に、放熱部品としてアルミニウムブロッ
ク板を用意し、この上に放熱グリースを50μmの厚さ
に塗布し、前記のセラミックス回路基板搭載のベース板
を配置し、四隅を6Nの締め込み力でネジ止めした。そ
の後、締め付けをはずし、ベース板裏面へのグリースの
付着面積を測定することで、セラミックス回路基板搭載
のベース板と放熱部品との密着性を評価した。以上の結
果を表1に示した。Further, an aluminum block plate is prepared as a heat dissipating component, a heat dissipating grease is applied thereon to a thickness of 50 μm, the base plate on which the ceramic circuit board is mounted is disposed, and the four corners are tightened with a 6N tightening force. Screwed. Thereafter, the fastening was removed, and the adhesion area between the base plate mounted on the ceramic circuit board and the heat radiating component was evaluated by measuring the area of the grease adhering to the back surface of the base plate. Table 1 shows the above results.
【0042】[0042]
【表1】 [Table 1]
【0043】〔実施例2〕厚み5.3mmのプリフォ−
ムに含浸したこと、ベ−ス板の厚みを5mmとした以外
は、実施例1と同様な方法にて、セラミックス回路基板
が接合されたベ−ス板を作製した。実施例1と同様な方
法で反りを測定した。なお、ベ−ス板に反りを付与した
後の凸面側の測定ライン上のいずれの2点を零として
も、その間の点はすべて正の高さとなっていた。ベ−ス
板に反りを付与した後及びセラミックス回路基板接合後
の凸面側の反り測定結果、並びにベース板と放熱部品と
の密着性を調べた結果を表1に示した。Example 2 5.3 mm thick preform
A base plate to which a ceramic circuit board was joined was produced in the same manner as in Example 1 except that the base plate was impregnated and the thickness of the base plate was changed to 5 mm. Warpage was measured in the same manner as in Example 1. In addition, even if any two points on the convex side measurement line after the warp was applied to the base plate were set to zero, all points between them had a positive height. Table 1 shows the measurement results of the warpage on the convex surface side after the base plate was warped and after the ceramic circuit board was joined, and the results of examining the adhesion between the base plate and the heat radiating component.
【0044】〔実施例3〕厚み4.9mmのプリフォ−
ムに含浸したこと、含浸後の複合体加工時、複合体表面
にアルミニウム合金を残した状態で厚み5mmのベ−ス
板にしたこと、反りの付与を400℃で行ったこと以外
は、すべて実施例1と同様な方法にてセラミックス回路
基板が接合されたベ−ス板を作製した。実施例1と同様
な方法で反りを測定した。なお、ベ−ス板に反りを付与
した後の凸面側の測定ライン上のいずれの2点を零とし
ても、その間の点はすべて正の高さとなっていた。ベ−
ス板に反りを付与した後及びセラミックス回路基板接合
後の凸面側の反り測定結果、並びにベース板と放熱部品
との密着性を調べた結果を表1に示した。[Embodiment 3] A preform having a thickness of 4.9 mm
Except that the aluminum alloy was left on the surface of the composite during the processing of the composite after impregnation, and the base plate was 5 mm thick, and that the warping was performed at 400 ° C. A base plate to which a ceramic circuit board was joined was manufactured in the same manner as in Example 1. Warpage was measured in the same manner as in Example 1. In addition, even if any two points on the convex side measurement line after the warp was applied to the base plate were set to zero, all points between them had a positive height. Bee
Table 1 shows the measurement results of the warpage on the convex surface side after the warp was applied to the base plate and the bonding of the ceramic circuit board, and the results of examining the adhesion between the base plate and the heat radiating component.
【0045】〔実施例4〕厚み2.9mmのプリフォ−
ムに含浸したこと、含浸後の複合体加工時、複合体表面
にアルミニウム合金を残した状態で厚み3mmのベ−ス
板にしたこと、反りの付与を400℃で行ったこと以外
は、すべて実施例1と同様な方法にてセラミックス回路
基板が接合されたベ−ス板を作製した。実施例1と同様
な方法で反りを測定した。なお、ベ−ス板に反りを付与
した後の凸面側の測定ライン上のいずれの2点を零とし
ても、その間の点はすべて正の高さとなっていた。ベ−
ス板に反りを付与した後及びセラミックス回路基板接合
後の凸面側の反り測定結果、並びにベース板と放熱部品
との密着性を調べた結果を表1に示した。[Embodiment 4] A preform having a thickness of 2.9 mm
Except that the aluminum alloy was left on the surface of the composite during the processing of the composite after impregnation, a base plate with a thickness of 3 mm was formed, and the warping was performed at 400 ° C. A base plate to which a ceramic circuit board was joined was manufactured in the same manner as in Example 1. Warpage was measured in the same manner as in Example 1. In addition, even if any two points on the convex side measurement line after the warp was applied to the base plate were set to zero, all points between them had a positive height. Bee
Table 1 shows the measurement results of the warpage on the convex surface side after the warp was applied to the base plate and the bonding of the ceramic circuit board, and the results of examining the adhesion between the base plate and the heat radiating component.
【0046】〔実施例5〕ベ−ス板作製については実施
例1と同様に行った。このベ−ス板に反りを付与するに
際しては、ベ−ス板の各4辺が支点になるようなセッタ
−に載せ、ベ−ス板の中心を同表面に対し直角に押し込
んだまま、実施例1と同じ条件で加熱処理ならびにセラ
ミックス回路基板接合を行った。反りは実施例1と同様
な方法で測定した。なお、ベ−ス板に反りを付与した後
の凸面側の測定ライン上のいずれの2点を零としても、
その間の点はすべて正の高さとなっていた。ベ−ス板に
反りを付与した後及びセラミックス回路基板接合後の凸
面側の反り測定結果、並びにベース板と放熱部品との密
着性を調べた結果を表1に示した。Example 5 A base plate was produced in the same manner as in Example 1. When the base plate is to be warped, it is placed on a setter such that each of the four sides of the base plate serves as a fulcrum, and the center of the base plate is pressed at right angles to the same surface. The heat treatment and the bonding of the ceramic circuit board were performed under the same conditions as in Example 1. Warpage was measured in the same manner as in Example 1. It should be noted that even if any two points on the convex side measurement line after the base plate is warped are set to zero,
All points in between had a positive height. Table 1 shows the measurement results of the warpage on the convex surface side after the base plate was warped and after the ceramic circuit board was joined, and the results of examining the adhesion between the base plate and the heat radiating component.
【0047】〔比較例1〕ベース板への反りの付与につ
いては実施例5と同様な方法で行った以外は、ベース板
自体の作製ならびにセラミックス回路基板の接合、反り
の測定などすべて実施例1と同様な手法で行った。 な
お、ベ−ス板に反りを付与した後の凸面側の反り測定を
行ったところ、長手方向の測定スパンの両端の高さを零
としたとき、ベース板中心は正の高さを示したものの、
ベース板中心から、一方の端部に向けての線上に、凹形
状をした箇所が存在していた。ベ−ス板に反りを付与し
た後及びセラミックス回路基板接合後の凸面側の反り測
定結果、並びにベース板と放熱部品との密着性を調べた
結果を表1に示した。[Comparative Example 1] Except for applying the warp to the base plate in the same manner as in Example 5, all of the fabrication of the base plate itself, the joining of the ceramic circuit board, and the measurement of the warp were performed in Example 1. The procedure was performed in the same manner as described above. When the warpage of the convex side after the warp was applied to the base plate was measured, the center of the base plate showed a positive height when the height at both ends of the measurement span in the longitudinal direction was set to zero. Although,
A concave portion was present on a line from the center of the base plate toward one end. Table 1 shows the measurement results of the warpage on the convex surface side after the base plate was warped and after the ceramic circuit board was joined, and the results of examining the adhesion between the base plate and the heat radiating component.
【0048】〔比較例2〕ベース板への反りの付与につ
いては実施例5と同様な方法で行った以外は、ベース板
自体の作製ならびにセラミックス回路基板の接合、反り
の測定などすべて実施例2と同様な手法で行った。な
お、ベ−ス板に反りを付与した後の凸面側の反り測定を
行ったところ、長手方向の測定スパンの両端の高さを零
としたとき、ベース板中心は正の高さを示したものの、
ベース板中心から、両方の端部に向けての線上に、一方
は直線形状をした箇所、もう一方には凹形状をした箇所
が存在していた。ベ−ス板に反りを付与した後及びセラ
ミックス回路基板接合後の凸面側の反り測定結果、並び
にベース板と放熱部品との密着性を調べた結果を表1に
示した。COMPARATIVE EXAMPLE 2 Except for applying the warp to the base plate in the same manner as in Example 5, all of the fabrication of the base plate itself, the joining of the ceramic circuit board, and the measurement of the warp were performed in Example 2. The procedure was performed in the same manner as described above. When the warpage of the convex side after the warp was applied to the base plate was measured, the center of the base plate showed a positive height when the height at both ends of the measurement span in the longitudinal direction was set to zero. Although,
On the line from the center of the base plate to both ends, one portion had a linear shape, and the other had a concave portion. Table 1 shows the measurement results of the warpage on the convex surface side after the base plate was warped and after the ceramic circuit board was joined, and the results of examining the adhesion between the base plate and the heat radiating component.
【0049】〔比較例3〕ベース板への反りの付与につ
いては実施例5と同様な方法で行った以外は、ベース板
自体の作製ならびにセラミックス回路基板の接合、反り
の測定などすべて実施例3と同様な手法で行った。な
お、ベ−ス板に反りを付与した後の凸面側の反り測定を
行ったところ、短手方向の測定スパンの両端の高さを零
としたとき、ベース板中心は正の高さを示したものの、
ベース板中心から、一方の端部に向けての線上に、凹形
状をした箇所が存在していた。ベ−ス板に反りを付与し
た後及びセラミックス回路基板接合後の凸面側の反り測
定結果、並びにベース板と放熱部品との密着性を調べた
結果を表1に示した。[Comparative Example 3] Except for applying the warp to the base plate in the same manner as in Example 5, the fabrication of the base plate itself, the joining of the ceramic circuit board, and the measurement of the warp were all performed in Example 3. The procedure was performed in the same manner as described above. When the warpage was measured on the convex side after the base plate was warped, the center of the base plate showed a positive height when the height at both ends of the measurement span in the short direction was set to zero. Although
A concave portion was present on a line from the center of the base plate toward one end. Table 1 shows the measurement results of the warpage on the convex surface side after the base plate was warped and after the ceramic circuit board was joined, and the results of examining the adhesion between the base plate and the heat radiating component.
【0050】〔比較例4〕ベース板への反りの付与につ
いては実施例5と同様な方法で行った以外は、ベース板
自体の作製ならびにセラミックス回路基板の接合、反り
の測定などすべて実施例4と同様な手法で行った。な
お、ベ−ス板に反りを付与した後の凸面側の反り測定を
行ったところ、長手方向の測定スパンの両端の高さを零
としたとき、ベース板中心は正の高さを示したものの、
ベース板中心から、一方の端部に向けての線上に、直線
形状をした箇所が存在していた。ベ−ス板に反りを付与
した後及びセラミックス回路基板接合後の凸面側の反り
測定結果、並びにベース板と放熱部品との密着性を調べ
た結果を表1に示した。[Comparative Example 4] Except for applying the warp to the base plate in the same manner as in Example 5, all of the fabrication of the base plate itself, the joining of the ceramic circuit board, and the measurement of the warp were performed in Example 4. The procedure was performed in the same manner as described above. When the warpage of the convex side after the warp was applied to the base plate was measured, the center of the base plate showed a positive height when the height at both ends of the measurement span in the longitudinal direction was set to zero. Although,
There was a linear portion on a line from the center of the base plate toward one end. Table 1 shows the measurement results of the warpage on the convex surface side after the base plate was warped and after the ceramic circuit board was joined, and the results of examining the adhesion between the base plate and the heat radiating component.
【0051】〔比較例5〕ベース板への反りの付与、ベ
ース板自体の作製ならびにセラミックス回路基板の接
合、反りの測定などすべて実施例5と同様な手法で行っ
た。なお、ベ−ス板に反りを付与した後の凸面側の反り
測定を行ったところ、短手方向の測定スパンの両端の高
さを零としたとき、ベース板中心は正の高さを示したも
のの、ベース板中心から、一方の端部に向けての線上
に、凹形状をした箇所が存在していた。ベ−ス板に反り
を付与した後及びセラミックス回路基板接合後の凸面側
の反り測定結果、並びにベース板と放熱部品との密着性
を調べた結果を表1に示した。Comparative Example 5 A method similar to that in Example 5 was used, such as applying a warp to the base plate, manufacturing the base plate itself, joining the ceramic circuit board, and measuring the warp. When the warpage was measured on the convex side after the base plate was warped, the center of the base plate showed a positive height when the height at both ends of the measurement span in the short direction was set to zero. However, there was a concave portion on a line from the center of the base plate toward one end. Table 1 shows the measurement results of the warpage on the convex surface side after the base plate was warped and after the ceramic circuit board was joined, and the results of examining the adhesion between the base plate and the heat radiating component.
【0052】[0052]
【発明の効果】本発明のアルミニウムー炭化けい素質複
合体からなるベース板は、放熱部品との密着性向上を考
慮した反り形状を有していることから、回路基板用ベー
ス板として好適に使用される。The base plate made of the aluminum-silicon carbide composite of the present invention has a warped shape in consideration of the improvement of the adhesion to the heat radiating component, and thus is suitably used as a base plate for a circuit board. Is done.
【図1】セラミックス回路基板の実用化での放熱構造を
示す断面図。FIG. 1 is a cross-sectional view showing a heat dissipation structure in practical use of a ceramic circuit board.
【図2】従来からの、セラミックス回路基板を一体化し
たベース板の形状例を示す断面図。FIG. 2 is a cross-sectional view showing a conventional example of the shape of a base plate in which a ceramic circuit board is integrated.
【図3】本発明の用語を説明する図。FIG. 3 is a diagram illustrating terms of the present invention.
1; 電子部品 2; セラミックス回路基板 3; ベース板(ヒートシンク) 4; 放熱フィン REFERENCE SIGNS LIST 1 electronic component 2 ceramic circuit board 3 base plate (heat sink) 4 radiating fin
Claims (1)
とする金属を含浸してなる金属−セラミックス複合体か
らなる放熱部品であって、一主面上に任意の2点をとっ
たときに、前記2点の間に位置する主面が正の曲率半径
を有する平板状であることを特徴とする放熱部品。1. A heat-dissipating component comprising a metal-ceramic composite in which a silicon carbide-based porous body is impregnated with a metal containing aluminum as a main component, wherein two arbitrary points are taken on one main surface. A heat dissipating component, wherein a main surface located between the two points is a flat plate having a positive radius of curvature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000106102A JP2001291809A (en) | 2000-04-07 | 2000-04-07 | Heat dissipation components |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000106102A JP2001291809A (en) | 2000-04-07 | 2000-04-07 | Heat dissipation components |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001291809A true JP2001291809A (en) | 2001-10-19 |
Family
ID=18619336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000106102A Pending JP2001291809A (en) | 2000-04-07 | 2000-04-07 | Heat dissipation components |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001291809A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2006030676A1 (en) * | 2004-09-14 | 2008-05-15 | 電気化学工業株式会社 | Aluminum-silicon carbide composite |
| WO2013002249A1 (en) * | 2011-06-27 | 2013-01-03 | ローム株式会社 | Semiconductor module |
| WO2015115649A1 (en) * | 2014-02-03 | 2015-08-06 | 電気化学工業株式会社 | Silicon carbide complex, method for manufacturing same, and heat dissipation component using same |
| WO2024190132A1 (en) * | 2023-03-13 | 2024-09-19 | 富士電機株式会社 | Heat dissipation base, semiconductor module and energy conversion device |
-
2000
- 2000-04-07 JP JP2000106102A patent/JP2001291809A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2006030676A1 (en) * | 2004-09-14 | 2008-05-15 | 電気化学工業株式会社 | Aluminum-silicon carbide composite |
| US7838107B2 (en) | 2004-09-14 | 2010-11-23 | Denki Kagaku Kogyo Kabushiki Kaisha | Aluminum-silicon carbide composite |
| JP4761157B2 (en) * | 2004-09-14 | 2011-08-31 | 電気化学工業株式会社 | Aluminum-silicon carbide composite |
| WO2013002249A1 (en) * | 2011-06-27 | 2013-01-03 | ローム株式会社 | Semiconductor module |
| JPWO2013002249A1 (en) * | 2011-06-27 | 2015-02-23 | ローム株式会社 | Semiconductor module |
| US9129932B2 (en) | 2011-06-27 | 2015-09-08 | Rohm Co., Ltd. | Semiconductor module |
| WO2015115649A1 (en) * | 2014-02-03 | 2015-08-06 | 電気化学工業株式会社 | Silicon carbide complex, method for manufacturing same, and heat dissipation component using same |
| CN105981162A (en) * | 2014-02-03 | 2016-09-28 | 电化株式会社 | Silicon carbide composite body, manufacturing method thereof, and heat dissipation part using the same |
| WO2024190132A1 (en) * | 2023-03-13 | 2024-09-19 | 富士電機株式会社 | Heat dissipation base, semiconductor module and energy conversion device |
| JPWO2024190132A1 (en) * | 2023-03-13 | 2024-09-19 | ||
| JP7803460B2 (en) | 2023-03-13 | 2026-01-21 | 富士電機株式会社 | Heat dissipation base, semiconductor module, and energy conversion device |
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