JP2001291797A - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

[PROBLEMS] To reduce the thickness of a semiconductor device and to appropriately cope with a portion requiring flexibility in mounting. SOLUTION: A wiring pattern 23 is formed on one surface of a flexible base material 21 via an adhesive layer 22, and the wiring pattern 23 is electrically connected to a device hole formed in the base material 21. A flexible insulating layer 24 and a flexible insulating layer 25 are provided so that the semiconductor element 30 mounted to be connected is sandwiched from both sides. An opening is formed in the insulating layer 25 at a portion corresponding to the terminal forming portion of the wiring pattern 23. External connection terminal 26
Is bonded to the terminal forming portion of the wiring pattern 23 exposed from the opening of the insulating layer 25.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method of manufacturing the same, and more particularly, to a semiconductor device having a ball grid array (BGA) type package structure, which is required to have flexibility in mounting. The present invention also relates to a technology adapted to suitably cope with the above.

[0002]

2. Description of the Related Art In a semiconductor device in which a semiconductor element (chip) is mounted on a package, there is an increasing demand for miniaturization (thinning) in order to increase the mounting density. As a semiconductor device for meeting such a demand, there is a so-called overmold type in which a semiconductor chip is mounted on a printed wiring board and one surface thereof (the surface on which the semiconductor chip is mounted) is molded.

As a typical structure, this overmold type semiconductor device has a resin substrate as a base material of a package, and a wiring pattern is formed on both sides of the resin substrate. Through holes are formed at required places. The wiring patterns on both surfaces of the resin substrate are electrically connected to each other via a conductive film such as a plating film formed on the inner wall of the through hole.
The semiconductor chip to be mounted is fixed to the die pad on the resin substrate with its back side down, and its electrode terminals are
It is electrically connected to the wiring pattern on the upper surface side by wire bonding. The semiconductor chip (including bonding wires) is sealed with a sealing resin. on the other hand,
The solder bumps serving as external connection terminals are electrically connected to the wiring pattern on the lower surface side, and are arranged in a large number, for example, in a matrix. Further, a protective film for protecting the exposed wiring patterns on both surfaces of the resin substrate from the outside is provided.

[0004]

In the above-mentioned overmold type semiconductor device, the thickness of the semiconductor device can be reduced as compared with other types of semiconductor devices due to single-sided molding. However, in the current technology, the resin substrate itself has a thickness of about 0.3 to 0.5 mm, and a wire protrudes above the semiconductor chip to cover the wire and seal it with a sealing resin. Therefore, there is a disadvantage that the thickness of the entire semiconductor device becomes considerable. For this reason, it is not always possible to meet the demand for thinning.

[0005] Further, as the size of a semiconductor device is reduced due to high-density mounting, it is required that the semiconductor device be used in various situations. In other words, the semiconductor device
It is not always mounted on a flat mounting surface such as a motherboard. For example, a OA device such as a computer or a printer requires a flexible portion, and a space for controlling a camera has a narrow and complicated shape. It may be implemented in places where there is.

In such a case, in the overmold type semiconductor device, the thickness of the entire device becomes considerably large as described above. There is a problem that it cannot be done. The present invention has been made in view of the problems in the related art, and aims to reduce the thickness,
It is an object of the present invention to provide a semiconductor device and a method for manufacturing the same, which can suitably cope with a portion requiring flexibility.

[0007]

According to a first aspect of the present invention, there is provided a device for accommodating a semiconductor element in a predetermined portion of a flexible base material. A step of forming a hole, and a step of forming the wiring pattern on one surface of the base substrate such that a part of the wiring pattern of a required shape extends into a region of the device hole; A step of mounting the semiconductor element in the hole such that an electrode terminal of the semiconductor element is electrically connected to a part of the wiring pattern; and a side opposite to a side of the base material on which the wiring pattern is formed. Forming a flexible first insulating layer so as to cover the surface of the semiconductor element and the surface opposite to the side on which the electrode terminals of the semiconductor element are formed; and forming the wiring pattern of the base material. Has been Surface and said forming a second insulating layer having flexibility so as to cover the surface where the electrode terminals of the semiconductor element is formed, the second insulating layer,
Forming an opening in a portion corresponding to a terminal forming portion of the wiring pattern; and dividing the structure formed through the above steps into each semiconductor device so as to include at least one semiconductor element. And a method for manufacturing a semiconductor device, comprising:

According to the method of manufacturing a semiconductor device according to the first embodiment, the base material, the first insulating layer, and the second insulating layer, which are provided so as to sandwich the wiring pattern from both sides together with the semiconductor element, Since each has flexibility,
The entire apparatus can be made flexible, for example, like a floppy disk. Accordingly, when mounting the present apparatus, it is possible to suitably cope with places where flexibility is required in OA equipment such as a computer and a printer.

Further, the semiconductor element is inserted into the device hole of the base material (that is, buried in the base material).
Since the semiconductor device is mounted, the semiconductor device can be configured to be thin as a whole. According to the second aspect of the present invention, a step of forming a through hole in a portion of the flexible base material corresponding to a portion to which the external connection terminal is joined; Forming a wiring pattern on a surface of the wiring pattern such that a terminal forming portion of the wiring pattern of a required shape covers the through-hole region; and forming an electrode terminal of the semiconductor element on the semiconductor element mounting portion of the wiring pattern. A step of mounting the semiconductor element so as to be electrically connected to the pattern; and a step of covering the surface of the semiconductor element opposite to the side on which the electrode terminals are formed and the wiring pattern so as to be flexible. A step of forming an insulating layer and a step of dividing the structure formed through the above steps into respective semiconductor devices so as to include at least one semiconductor element. Granulation method is provided.

According to the method of manufacturing a semiconductor device according to the second embodiment, similarly to the first embodiment, the base material and the insulating layer are provided so as to sandwich the wiring pattern from both sides together with the semiconductor element. Since each has flexibility, it is possible to impart flexibility to the entire device, and it is possible to suitably mount the device at a place where flexibility is required. Further, since the semiconductor element is mounted so as to be embedded in the insulating layer, the thickness of the semiconductor device can be reduced.

Further, according to a third aspect of the present invention, a step of forming a wiring pattern of a required shape on one surface of a flexible base material, Mounting the semiconductor element so that the electrode terminals of the semiconductor element are electrically connected to the wiring pattern; and covering a surface opposite to the side on which the electrode terminals of the semiconductor element are formed and the wiring pattern. Forming a flexible insulating layer, forming an opening in a portion of the insulating layer corresponding to a terminal forming portion of the wiring pattern, and a structure formed through the above steps. Body
Dividing the semiconductor device into each semiconductor device so as to include at least one semiconductor element.

The method for manufacturing a semiconductor device according to the third embodiment is different from the method according to the second embodiment in that the terminal formation portion of the wiring pattern faces the insulating layer or the base substrate. The only difference is whether they are suitable. Further, according to another embodiment of the present invention, there is provided a semiconductor device manufactured by the method of manufacturing a semiconductor device according to each of the above-described embodiments.

[0013]

FIG. 1 schematically shows a sectional structure of a semiconductor device according to a first embodiment of the present invention. The semiconductor device 10 according to the present embodiment basically includes a package 20 serving as a wiring board and a semiconductor element (chip) 30 mounted so as to be embedded in the package 20.

In the package 20, 21 is a resin layer as a base material, 22 is an adhesive layer formed on one surface (upper side in the illustrated example) of the resin layer 21, and 23 is an adhesive layer 22 via the adhesive layer 22. Wiring patterns (leads) formed on one surface of the resin layer 21, 24 and 25 indicate insulating layers each functioning as a protective film, and 26 indicates solder bumps functioning as external connection terminals of the device 10. The insulating layer 24
The resin layer 21 is formed so as to cover the other surface (the lower side in the illustrated example) and the back surface of the semiconductor chip 30 (the surface opposite to the side on which the electrode terminals 31 are formed).
The insulating layer 25 is formed so as to fill the gap between the semiconductor chip 30 and the resin layer 21 and cover the wiring pattern 23 (however, a portion corresponding to the terminal forming portion of the wiring pattern 23 is opened). I have. Then, a solder bump 26 as an external connection terminal is joined to the opening portion of the insulating layer 25, that is, the exposed terminal forming portion of the wiring pattern 23.

For the resin layer 21, a material having excellent bending resistance (ie, a flexible material) is used. For example, a resin film made of a polyimide resin, a polyester resin, or the like is used. As a specific mode, a tape in which a polyimide-based thermoplastic adhesive (adhesive layer 22) is applied to one surface of a polyimide resin film (resin layer 21) is used. In this sense, the semiconductor device 10 of the present embodiment has a tape carrier package (TCP) structure.

The insulating layers 24 and 25 have a resin layer 2
As in the case of 1, a flexible material is used. For example, a resin paste such as a solder resist or a resin film such as a dry film is preferably used. In this embodiment, a photosensitive dry film is used for the insulating layer 24, and a photosensitive solder resist is used for the insulating layer 25. Incidentally, the resin layer 21 has a Young's modulus (elastic modulus) of 8800MP.
a, a material having a Poisson's ratio of about 0.30 is selected, and for the insulating layers 24 and 25, a material having a Young's modulus (elastic modulus) and a Poisson's ratio according to the resin layer 21 is selected.

The material of the wiring pattern 23 is as follows.
Typically, copper (Cu) is used, but in order to further increase the conductivity and improve the connection reliability with the electrode terminals 31 of the semiconductor chip 30, a coating of gold (Au), tin (Sn), or the like is applied. It is preferred to apply. On the other hand, the semiconductor chip 30 is packaged such that its electrode terminals 31 (for example, gold (Au) bumps) are connected to a portion extending inside the wiring pattern (lead) 23 (that is, an “inner lead” portion). 2
0 is implemented. That is, the semiconductor chip 30 and the wiring pattern 23 to which the external connection terminal 26 is connected are electrically connected by inner lead bonding.

It is preferable that the semiconductor chip 30 be as thin as possible in order to be mounted in the package 20. In the current technology, semiconductor chips having a thickness of about 50 μm to 100 μm are provided, and it is technically sufficiently possible to mount a semiconductor chip having such a thickness in a package. In the present embodiment, the semiconductor chip 30 has a thickness of 5
A thin material of about 0 μm is used.

As described above, in the semiconductor device 10 according to the present embodiment, the base material (resin layer 21) and the protective films (insulating layers 24 and 25) of the package 20 are made of a flexible material (polyimide resin, polyester). Resin, solder resist, etc.)
And a thin semiconductor chip 30 having a thickness of about 50 μm is mounted so as to be embedded in the package 20.

Although the solder bumps (external connection terminals) 26 are provided in the example of FIG. 1, it is not always necessary to provide them. This is because such external connection terminals may be provided immediately before mounting the device 10 in actual use. That is, as a final form of the device 10, it is sufficient that the terminal formation portion of the wiring pattern 23 is exposed from the insulating layer 25 so that an external connection terminal such as a solder bump can be connected.

Hereinafter, a method of manufacturing the semiconductor device 10 of the present embodiment will be described with reference to FIGS. In the first step (Fig. 2
(See (a)), and a tape in which a polyimide-based thermoplastic adhesive (adhesive layer 22) is applied to one surface of a polyimide resin film (resin layer 21) is prepared as a base material of the package. The thickness of the resin layer 21 is selected to be about 50 μm, and the thickness of the adhesive layer 22 is selected to be about 20 μm.

In the next step (see FIG. 2B), through holes (device holes DH) for accommodating the semiconductor chips are formed at predetermined positions of the tape by punching or the like. In the next step (see FIG. 2C), the copper foil 23a is bonded to the surface of the tape on which the adhesive (adhesive layer 22) is applied by hot pressing. The thickness of the copper foil 23a is selected to be about 20 μm.

In the next step (see FIG. 2D), the required wiring pattern (lead) 23 is formed by processing the copper foil 23a by photolithography. That is, copper foil 2
3a, a photosensitive resist (not shown) is applied, the resist is patterned so as to conform to the shape of the wiring pattern, unnecessary portions of the copper foil 23a are removed by etching, and the resist is peeled off. Gold (A)
u), plating of tin (Sn) or the like. At this time, copper foil 2
By using 3a as a plating base film (power supply layer),
Gold (Au), tin (S) on copper foil 23a by electrolytic plating
n) and the like. Thereby, a required wiring pattern (lead) 23 is formed.

In the next step (see FIG. 2E), a semiconductor chip 30 is appropriately arranged in each device hole DH, and an electrode terminal 31 made of a gold (Au) bump is connected to the "inner lead" of the wiring pattern 23. The semiconductor chips 30 are mounted so as to be electrically connected to the portion "", that is, by inner lead bonding connection. In addition, as for the semiconductor chip 30, the back surface (the surface opposite to the side on which the electrode terminals 31 are formed) is opposite to the other surface of the resin layer 21 (the side opposite to the side on which the adhesive layer 22 is formed). The surface is appropriately ground so as to have the same level as that of the surface, so that the thickness finally becomes 50 μm or less.

In the next step (see FIG. 3A), a photosensitive dry film is formed so as to cover the other surface of the resin layer 21 and the back surface of the semiconductor chip 30. This dry film is used as the insulating layer 24 and has a thickness of 2
It is selected from 0 μm to 50 μm. In the next step (Fig. 3
(See (b)), a photosensitive solder resist is applied so as to fill the gap between the semiconductor chip 30 and the resin layer 21 and cover the wiring pattern 23. This solder resist layer is used as the insulating layer 25 and has a thickness of 20 μm to 50 μm.
μm.

In the next step (see FIG. 3C), the solder resist layer (insulating layer 25) is exposed and developed according to the shape of the terminal forming portion of the wiring pattern 23 (patterning of the solder resist layer 25). To form an opening OP in a portion corresponding to the terminal forming portion. As a result, the terminal formation portion of the wiring pattern 23 is exposed, and the wiring pattern 23 in other portions is
5).

In the last step (see FIG. 3D), a solder bump 26 as an external connection terminal is bonded to the package 20 and divided into individual semiconductor devices 10. The solder bump 26 is formed by bonding a solder ball to a terminal forming portion of the wiring pattern 23 exposed from the opening of the solder resist layer (insulating layer 25) by low-temperature reflow. Although not specifically shown, before the solder balls are arranged in the openings of the solder resist layer 25, a conductor film such as Cu plating is formed on the inner walls of the openings in order to improve the wettability of the solder. It is preferable to do so.

Thereafter, the package is divided by a dicer or the like so as to include one semiconductor chip 30 for each package along a dividing line CC ′ as shown by a broken line. Thereby, the semiconductor device 10 of the embodiment shown in FIG. 1 is manufactured. As described above, according to the semiconductor device 10 and the method of manufacturing the same according to the present embodiment, the resin layer 21 and the insulating layers 24 and 25 having a relatively large thickness among the members constituting the package 20 are made flexible. Since it is formed of a material having a characteristic (polyimide resin, polyester resin, solder resist, etc.), the entire device can be made flexible, for example, like a floppy disk.

As a result, for example, OA equipment such as a computer and a printer requires flexibility,
The device 10 can be suitably mounted also in a space having a small space and a complicated shape, such as for controlling a camera. Further, since the thin semiconductor chip 30 having a thickness of about 50 μm is mounted so as to be embedded in the package 20, the entire device can be configured to be thin. That is, the thickness of the semiconductor device 10 can be reduced.

In the manufacturing method according to the present embodiment, the external connection terminals (solder bumps 26) are provided before the individual semiconductor devices 10 are divided in the step of FIG. 3D. It is not always necessary to provide external connection terminals. That is, it is sufficient that the terminal formation portion of the wiring pattern 23 is exposed from the insulating layer 25 so that the external connection terminal can be connected. Therefore, in the step of FIG. 3D, only the division processing of the semiconductor device 10 may be performed without bonding the solder bumps 26.

In this embodiment, the case where a photosensitive dry film is used for the insulating layer 24 and a photosensitive solder resist is used for the insulating layer 25 has been described.
Of course, the materials used for 4, 25 are not limited to this combination. For example, the combination of materials used for the insulating layers 24 and 25 may be reversed, or the insulating layers 24 and 25 may be formed of the same material. In short, it is sufficient that the insulating layers 24 and 25 are formed of a flexible material.

FIG. 4 schematically shows the structure of a first modification of the semiconductor device 10 of FIG. The illustrated semiconductor device 10a is different from the semiconductor device 10 illustrated in FIG. 1 in that a heat dissipation coating layer (heat spreader) 27 is provided on the surface of the package 20a on which the insulating layer 24 is formed. . The heat dissipation coating layer 27 is formed so as to fill the opening formed in the insulating layer 24 so as to be in contact with the back surface of the semiconductor chip 30 and to cover the insulating layer 24. For the heat dissipation coating layer 27, a material having high thermal conductivity and flexibility is used. For example, a resin paste having good heat conductivity is used.

The semiconductor device 10a of FIG. 4 can be manufactured basically in the same manner as the method of manufacturing the semiconductor device 10 of FIG. That is, FIGS.
After the step (a), the insulating layer (photosensitive dry film) 2 corresponding to the central portion of the back surface of the semiconductor chip 30
4, an opening is formed by photo-etching, and a resin paste having good thermal conductivity is applied so as to fill the opening and cover the insulating layer 24 (the heat radiation coating layer 2).
7) and through the steps shown in FIGS. 3B to 3D.

According to the semiconductor device 10a shown in FIG. 4, in addition to the effect obtained in the embodiment shown in FIG. 1 (which can be mounted at a place where flexibility is required and can be made thinner), the heat dissipation coating can be obtained. The layer 27 has an advantage that heat generated from the semiconductor chip 30 can be effectively released to the outside of the package 20a. FIG. 5 shows a second example of the semiconductor device 10 of FIG.
13 schematically shows the configuration of the modified example. The illustrated semiconductor device 10b is different from the semiconductor device 10 shown in FIG. 1 in that two types of heat-radiating coating layers (heat spreaders) 27 are provided on the surface of the package 20b on which the insulating layer 24 is formed.
And 28 are provided. Heat dissipation coating layer 27
The same material (resin paste with good thermal conductivity) as illustrated in FIG. 4 is used. However, in this embodiment, the heat-radiating coating layer 27 is formed so as to fill the opening formed in the insulating layer 24 and contact the back surface of the semiconductor chip 30. On the other hand, the heat dissipation coating layer 28 is
And the heat radiation coating layer 27. Similarly, a material having high thermal conductivity and flexibility is used for the heat dissipation coating layer 28. For example, a film-like material such as rubber or carbon fiber sheet having good heat conductivity is used.

The semiconductor device 10b shown in FIG.
Can be manufactured in the same manner as the method of manufacturing the semiconductor device 10 described above. That is, through the steps of FIGS. 2A to 3A, an opening is formed in the insulating layer (photosensitive dry film) 24 corresponding to the central portion of the back surface of the semiconductor chip 30 by photo-etching. Then, a resin paste having good heat conductivity is applied so as to fill the opening (formation of the heat dissipation coating layer 27), and further heat conduction is applied so as to cover the insulating layer 24 and the heat dissipation coating layer 27. 3 (b) to 3 (d) after sticking a good film-like rubber (formation of the heat dissipation coating layer 28).

According to the semiconductor device 10b of FIG. 5, the same effects and advantages as those of the semiconductor device 10a of FIG. 4 can be obtained. FIG. 6 schematically shows a configuration of a third modification of the semiconductor device 10 of FIG. The illustrated semiconductor device 10c is different from the semiconductor device 10 shown in FIG. 1 in that a heat dissipation coating layer (heat spreader) 28 is used instead of the insulating layer 24 in FIG.
The difference is provided. That is, the package 20c
The heat dissipation coating layer 28 is formed so as to cover the lower surface of the resin layer 21 and the rear surface of the semiconductor chip 30. The same material as that illustrated in FIG. 5 (film having good heat conductivity, such as rubber or carbon fiber sheet) is used for the heat dissipation coating layer 28.

The semiconductor device 10c shown in FIG.
Can be manufactured in the same manner as the method of manufacturing the semiconductor device 10 described above. In other words, after the steps of FIGS. 2A to 2E, a film-like rubber having good heat conductivity is attached so as to cover the lower surface of the resin layer 21 and the lower surface of the semiconductor chip 30 (for heat dissipation). (Formation of the cover layer 28)
It can be manufactured through the steps of (b) to FIG. 3 (d).

According to the semiconductor device 10c of FIG. 6, the same effects and advantages as those of the semiconductor device 10a of FIG. 4 can be obtained. In particular, regarding the heat dissipation effect, the contact area between the heat dissipation coating layer 28 and the semiconductor chip 30 is relatively large.
Further effects are expected compared to the case of the embodiment. FIG. 7 schematically shows a cross-sectional configuration of a semiconductor device according to the second embodiment of the present invention.

As in the first embodiment (FIG. 1), the semiconductor device 40 of this embodiment includes a package 50 serving as a wiring board and a semiconductor element mounted so as to be embedded in the package 50. (Chip) 60. In the package 50, 51 is a resin layer as a base material, 52 is an adhesive layer formed on one surface (the upper side in the illustrated example) of the resin layer 51, and 53 is a resin layer via the adhesive layer 52. 51 is a wiring pattern formed on one surface, 54 is an anisotropic conductive film (ACF) provided as an underfill material, 55 is an insulating layer functioning as a protective film, and 56 is an external connection terminal of the device 40. 3 shows a functioning solder bump. Anisotropic conductive film (ACF) 5
4 is formed between the surface of the semiconductor chip 60 on which the electrode terminals 61 are formed and the wiring pattern 53;
The insulating layer 55 includes a wiring pattern 53 and an anisotropic conductive film (AC
F) and the back surface of the semiconductor chip 60 (the surface opposite to the side on which the electrode terminals 61 are formed). The resin layer 51 and the adhesive layer 52 include
An opening is formed in a portion corresponding to the terminal forming portion of the wiring pattern 53, and a solder bump 56 as an external connection terminal is joined to this opening.

The solder bumps (external connection terminals)
56 is not necessarily required, as in the first embodiment (FIG. 1). That is, the present device 40
In the final form, it is sufficient that the terminal formation portion of the wiring pattern 53 is exposed from the resin layer 51 and the adhesive layer 52 so that external connection terminals such as solder bumps can be connected.

The resin layer 51, the adhesive layer 52, the wiring pattern 53, and the insulating layer 55 correspond to the resin layer 21, the adhesive layer 22, the wiring pattern 23, and the insulating layer 25 in the first embodiment (FIG. 1), respectively. Materials with the same attributes are used. The semiconductor chip 60 has its electrode terminals 6
1 (for example, a gold (Au) bump) is flip-chip mounted with an anisotropic conductive film (ACF) 54 so as to be connected to the wiring pattern 53. As the semiconductor chip 60, a thin chip having a thickness of about 50 μm is used, similarly to the semiconductor chip 30 in the first embodiment (FIG. 1).

As described above, the semiconductor device 40 according to the present embodiment includes the base material (resin layer 51) and the protective film (insulating layer 5) of the package 50, as in the first embodiment (FIG. 1).
5) is formed of a flexible material (polyimide resin, polyester resin, solder resist, etc.), and a thin semiconductor chip 60 having a thickness of about 50 μm is packaged.
It is characterized by being implemented so as to be embedded inside.

Hereinafter, a method of manufacturing the semiconductor device 40 according to the present embodiment will be described with reference to FIGS. First, in the first step (FIG. 8)
(See (a)) and a tape prepared by applying a polyimide-based thermoplastic adhesive (adhesive layer 52) to one surface of a polyimide resin film (resin layer 51) in the same manner as in the step of FIG. I do.

In the next step (see FIG. 8B), FIG.
In the same manner as in the step (b), by punching or the like,
A through hole TH is formed in a predetermined portion of the tape, that is, a portion corresponding to a portion to which an external connection terminal (solder bump 56) is joined in the last step. In the next step (see FIG. 8 (c)), in the same manner as in the steps of FIGS. 2 (c) and 2 (d), the surface of the tape on which the adhesive (adhesive layer 52) is applied is formed. Then, the copper foil is bonded by hot pressing, and the copper foil is processed by photolithography to form a wiring pattern 53 having a required shape.

In the next step (see FIG. 8D), an electrode terminal 61 made of a gold (Au) bump of the semiconductor chip 60 is provided on the chip mounting portion of the wiring pattern 53.
Flip-chip mounting so as to be electrically connected to No. 3. Specifically, first, an anisotropic conductive film (ACF) 54 in an uncured state is attached to the chip mounting portion of the wiring pattern 53, and then the semiconductor chip 60 is arranged (aligned) on the ACF 54, and further, The ACF 54 is cured by heating at a temperature of about 200 ° C. As a result, ACF5
This means that the semiconductor chip 60 is electrically connected to the wiring pattern 53 via the wiring 4 (mounting of the semiconductor chip 60).

In the next step (see FIG. 9A), the back surface of the semiconductor chip 60 (the surface opposite to the side on which the electrode terminals 61 are formed), the anisotropic conductive film (ACF) 54 and the wiring pattern A photosensitive solder resist is applied so as to cover 53. This solder resist layer is used as the insulating layer 55. In the last step (see FIG. 9B), FIG.
In the same manner as in the step (d), a solder bump 56 as an external connection terminal is joined to the package 50 and divided into individual semiconductor devices 40.

The solder bump 56 is formed by bonding a solder ball to the terminal forming portion of the wiring pattern 53 exposed from the opening (through hole TH) of the resin layer 51 and the adhesive layer 52 by low-temperature reflow. Is done. At this time, similarly to the first embodiment described above, before disposing the solder ball in the through hole TH, a conductor film such as Cu plating is formed on the inner wall of the through hole in order to improve the wettability of the solder. It is preferable to form them.

Thereafter, the package is divided by a dicer or the like so as to include one semiconductor chip 60 for each package along a dividing line CC ′ as shown by a broken line. Thus, the semiconductor device 40 of the embodiment shown in FIG. 7 is manufactured. Semiconductor device 40 according to the present embodiment
According to the manufacturing method thereof, the resin layer 51 and the insulating layer 55 having relatively large thicknesses among the members constituting the package 50 are formed of a flexible material, as in the first embodiment. Therefore, flexibility can be given to the entire device, and the device can be suitably mounted in a place where flexibility is required.

Further, since the semiconductor chip 60 having a thickness of about 50 μm is housed in the package 50, the thickness of the semiconductor device 40 can be reduced. In the manufacturing method according to the present embodiment, the external connection terminals (solder bumps 56) are provided before dividing into the individual semiconductor devices 40 in the step of FIG. 9B, but the external connection terminals are not necessarily provided as described above. No need to provide. Therefore, in the step of FIG. 9B, only the dividing process of the semiconductor device 40 may be performed without bonding the solder bumps 56.

Further, in the manufacturing method according to the present embodiment, the through hole TH is formed in the step of FIG. 8B, but is not formed at this stage, but in the last step (FIG. 9B).
In the step (2), the through hole TH may be formed immediately before the solder bump 56 is joined. In this case, the through hole TH can be formed by an excimer laser, a YAG laser, or the like.

FIG. 10 schematically shows the structure of a first modification of the semiconductor device 40 shown in FIG. The illustrated semiconductor device 40a is different from the semiconductor device 40 illustrated in FIG. 7 in that an external connection terminal 56 is provided on a surface of the package 50a on which the insulating layer 55 is formed. That is,
An external connection terminal 56 is provided on a surface opposite to the semiconductor device 40 (package 50) in FIG.

The semiconductor device 40a of FIG. 10 can be manufactured basically in the same manner as the method of manufacturing the semiconductor device 40 of FIG. That is, the process shifts from the process of FIG. 8A to the process of FIG. 8C (that is, the through hole TH is not formed in the process of FIG. 8B), and further, FIGS. After an opening is formed by photo-etching in the insulating layer (photosensitive solder resist) 55 corresponding to the portion where the solder bump 56 is to be joined through the process of FIG. It can be manufactured by going through the same processing as the processing performed in the above.

According to the semiconductor device 40a of FIG. 10, FIG.
The same effects as those of the first embodiment (they can be mounted in a place where flexibility is required and the thickness can be reduced) can be obtained. FIG. 11 schematically shows a configuration of a second modification of the semiconductor device 40 of FIG. The illustrated semiconductor device 40
7B is different from the semiconductor device 40 shown in FIG. 7 in that a heat dissipation coating layer (heat spreader) 57 is provided on the surface of the package 50b on which the insulating layer 55 is formed. The heat dissipation coating layer 57 is formed so as to fill the opening formed in the insulating layer 55 so as to be in contact with the back surface of the semiconductor chip 60 and to cover the insulating layer 55.
For the heat dissipation coating layer 57, a material having high heat conductivity and flexibility, for example, a resin paste having good heat conductivity is used.

The semiconductor device 40b of FIG. 11 can be manufactured in the same manner as the method of manufacturing the semiconductor device 40 of FIG. That is, through the steps of FIGS. 8A to 9A, an opening is formed by photo-etching in the insulating layer (photosensitive solder resist) 55 corresponding to the center of the back surface of the semiconductor chip 60. After forming and applying a resin paste having good thermal conductivity so as to fill the opening and cover the insulating layer 55 (formation of the heat dissipation coating layer 57), the process shown in FIG. Can be manufactured.

According to the semiconductor device 40b of FIG. 11, FIG.
In addition to the effect obtained in the above embodiment (which can be mounted in a place where flexibility is required and can be made thinner), the heat generated from the semiconductor chip 60 can be reduced by the heat dissipation coating layer 57 to the package 50a. This has the advantage of being able to effectively escape to the outside. FIG. 12 schematically shows a configuration of a third modification of the semiconductor device 40 of FIG. The illustrated semiconductor device 40c is different from the semiconductor device 40 illustrated in FIG. 7 in that a heat dissipation coating layer (heat spreader) 58 and an adhesive layer 59 are provided instead of the insulating layer 55 in FIG. . That is, the heat dissipation coating layer 58 is formed so as to be in contact with the back surface of the semiconductor chip 60 of the package 50c and to be bonded to the wiring pattern 53 via the adhesive layer 59. The heat radiation coating layer 58 includes
A flexible material having high thermal conductivity, for example, a film-like material such as rubber or carbon fiber sheet having good thermal conductivity is used.

The semiconductor device 40c of FIG. 12 can be manufactured in the same manner as the method of manufacturing the semiconductor device 40 of FIG. That is, through the steps of FIGS. 8A to 8D, an appropriate amount of adhesive is applied onto the wiring pattern 53 (formation of the adhesive layer 59), and the adhesive layer 59 and the back surface of the semiconductor chip 60 are further formed. After applying a film-like rubber having good thermal conductivity so as to cover (formation of the heat dissipating coating layer 58), it can be manufactured through the process of FIG. 9B.

According to the semiconductor device 40c of FIG.
The same effects and advantages as those of the first semiconductor device 40b can be obtained. In particular, regarding the heat radiation effect, since the contact area between the heat radiation coating layer 58 and the semiconductor chip 60 is relatively large, FIG.
Further effects are expected compared to the case of the first embodiment.

[0058]

As described above, according to the present invention, a member such as a base material constituting a package is formed of a flexible material, and a semiconductor element is provided therein so that flexibility is required. It is possible to mount the semiconductor device in a suitable place, and the thickness of the semiconductor device can be reduced.

Further, by appropriately selecting a material having good heat conductivity in addition to flexibility, the heat dissipation of the semiconductor device can be improved.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a configuration of a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a sectional view showing a manufacturing process of the semiconductor device of FIG. 1;

FIG. 3 is a cross-sectional view showing a manufacturing process following the manufacturing process of FIG. 2;

FIG. 4 is a cross-sectional view showing a configuration of a first modification of the semiconductor device of FIG. 1;

FIG. 5 is a sectional view showing a configuration of a second modification of the semiconductor device of FIG. 1;

FIG. 6 is a sectional view showing a configuration of a third modification of the semiconductor device of FIG. 1;

FIG. 7 is a cross-sectional view illustrating a configuration of a semiconductor device according to a second embodiment of the present invention.

FIG. 8 is a sectional view showing a manufacturing process of the semiconductor device of FIG. 7;

FIG. 9 is a cross-sectional view showing a manufacturing step that follows the manufacturing step of FIG. 8;

FIG. 10 is a sectional view showing a configuration of a first modification of the semiconductor device of FIG. 7;

FIG. 11 is a sectional view showing a configuration of a second modification of the semiconductor device of FIG. 7;

FIG. 12 is a sectional view showing a configuration of a third modification of the semiconductor device of FIG. 7;

[Explanation of symbols]

10, 10a, 10b, 10c, 40, 40a, 40
b, 40c ... Semiconductor devices 20, 20a, 20b, 20c, 50, 50a, 50
b, 50c package 21, 51 resin layer (base material) 22, 52, 59 adhesive layer 23, 53 wiring pattern 24, 25, 55 insulating layer (protective film) 26, 56 external connection terminal 27, 28, 57, 58: heat-dissipating coating layer (heat spreader) 30, 60: semiconductor element (chip) 31, 61: electrode terminal 54: anisotropic conductive film (ACF)

Claims (14)

[Claims] 1. A method according to claim 1, further comprising:
Forming a device hole for accommodating a semiconductor element; and forming the wiring pattern on one surface of the base material such that a part of the wiring pattern having a required shape extends into a region of the device hole. And mounting the semiconductor element in the device hole such that an electrode terminal of the semiconductor element is electrically connected to a part of the wiring pattern. The wiring pattern of the base material is formed. Forming a flexible first insulating layer so as to cover a surface on the side opposite to the side on which the semiconductor device is formed and a surface on the side opposite to the side on which the electrode terminals of the semiconductor element are formed; Forming a flexible second insulating layer so as to cover the surface on which the wiring pattern of the material is formed and the surface on which the electrode terminals of the semiconductor element are formed; Absolute of two Forming an opening in a portion of the layer corresponding to the terminal forming portion of the wiring pattern; and forming the structure formed through the above steps into each semiconductor device so that at least one semiconductor element is included. A method for manufacturing a semiconductor device. 2. The method according to claim 1, further comprising: after the step of forming an opening in the second insulating layer, joining an external connection terminal made of a metal bump to a terminal forming portion of the wiring pattern exposed from the opening. The method for manufacturing a semiconductor device according to claim 1, wherein: 3. An electrode terminal of the semiconductor element is formed on the first insulating layer between the step of forming the first insulating layer and the step of forming the second insulating layer. Forming an opening reaching a surface opposite to the side, and forming a highly thermally conductive and flexible coating layer to fill the opening and cover the first insulating layer. 2. The method of manufacturing a semiconductor device according to claim 1, further comprising: 4. An electrode terminal of the semiconductor element is formed on the first insulating layer between the step of forming the first insulating layer and the step of forming the second insulating layer. Forming an opening reaching the surface opposite to the side, forming a first coating layer having high thermal conductivity and flexibility so as to fill the opening, Forming a highly heat-conductive and flexible second coating layer so as to cover the first coating layer and the first insulating layer. A method for manufacturing a semiconductor device. 5. A surface of the base material opposite to a side on which a wiring pattern is formed and a side of the base element on which electrode terminals of the semiconductor element are formed, instead of the step of forming the first insulating layer. 2. The method of manufacturing a semiconductor device according to claim 1, further comprising a step of forming a flexible coating layer having high thermal conductivity so as to cover a surface on the opposite side of the semiconductor device. 6. A semiconductor device manufactured by the method of manufacturing a semiconductor device according to claim 1. 7. A step of forming a through hole in a portion of a flexible base material corresponding to a portion to which an external connection terminal is joined; and wiring of a required shape on one surface of the base material. Forming the wiring pattern so that a terminal forming portion of the pattern covers the through hole region; and an electrode terminal of a semiconductor element is electrically connected to the wiring pattern at a semiconductor element mounting portion of the wiring pattern. A step of mounting the semiconductor element, and a step of forming a flexible insulating layer so as to cover the surface opposite to the side on which the electrode terminals of the semiconductor element are formed and the wiring pattern, Dividing the structure formed through the above steps into semiconductor devices so as to include at least one semiconductor element. 8. A step of bonding an external connection terminal made of a metal bump to a terminal formation portion of a wiring pattern exposed from a through hole formed in the base material after the step of forming the insulating layer. The method for manufacturing a semiconductor device according to claim 7, comprising: 9. A surface of the insulating layer opposite to a side on which electrode terminals of the semiconductor element are formed, between the step of forming the insulating layer and the step of dividing the semiconductor device into the semiconductor devices. Forming an opening, and forming a coating layer having high thermal conductivity and flexibility so as to fill the opening and cover the insulating layer. Item 8. A method for manufacturing a semiconductor device according to item 7. 10. A step of forming an adhesive layer on the wiring pattern instead of the step of forming the insulating layer, and a side opposite to the side on which the adhesive layer and the electrode terminals of the semiconductor element are formed. Forming a highly heat-conductive and flexible coating layer so as to cover the surface of the semiconductor device. 11. A step of forming a wiring pattern of a required shape on one surface of a flexible base material, wherein an electrode terminal of a semiconductor element is electrically connected to the wiring pattern at a portion of the wiring pattern on which the semiconductor element is mounted. Mounting the semiconductor element so as to be electrically connected, and forming a flexible insulating layer so as to cover the surface opposite to the side on which the electrode terminals of the semiconductor element are formed and the wiring pattern. Forming an opening in a portion of the insulating layer corresponding to a terminal forming portion of the wiring pattern; and forming a structure formed through the above-described steps including at least one semiconductor element. Dividing the semiconductor device into individual semiconductor devices so that the semiconductor device is manufactured. 12. The method according to claim 12, further comprising, after the step of forming an opening in the insulating layer, a step of joining an external connection terminal made of a metal bump to a terminal forming portion of the wiring pattern exposed from the opening. The method of manufacturing a semiconductor device according to claim 11, wherein 13. The step of mounting the semiconductor element includes attaching an anisotropic conductive film in an uncured state to a portion of the wiring pattern on which the semiconductor element is mounted, and positioning the semiconductor element on the anisotropic conductive film. And heating the anisotropic conductive film by heating.
3. The method for manufacturing a semiconductor device according to claim 2. 14. A semiconductor device manufactured by the method for manufacturing a semiconductor device according to claim 7. Description: