JP2001291607A - Manufacturing method of platinum thin film resistor - Google Patents
Manufacturing method of platinum thin film resistorInfo
- Publication number
- JP2001291607A JP2001291607A JP2000102452A JP2000102452A JP2001291607A JP 2001291607 A JP2001291607 A JP 2001291607A JP 2000102452 A JP2000102452 A JP 2000102452A JP 2000102452 A JP2000102452 A JP 2000102452A JP 2001291607 A JP2001291607 A JP 2001291607A
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- Prior art keywords
- thin film
- platinum thin
- sputtering
- temperature
- forming
- Prior art date
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- Thermistors And Varistors (AREA)
Abstract
(57)【要約】
【課題】 基板に対する白金薄膜の密着性を低下させる
ことなく、高温アニールによる白金薄膜の抵抗温度係数
向上の可能な白金薄膜抵抗体の製造方法を提供する。
【解決手段】 アルミナ基板２の表面上にスパッタリン
グによるチタン層４の形成を行い、チタン層４上にスパ
ッタリングによる白金薄膜６の形成を行った後に、白金
薄膜６の抵抗温度係数を調整あるいは増大させるアニー
ルを行って白金薄膜抵抗体を製造する。その際、白金薄
膜６の形成及びチタン層４の形成のうちの少なくとも一
方をアルゴンガス中に酸素ガスを混合したスパッタリン
グガス中で行い、アニールを大気中で温度１０００℃の
条件下で行う。白金薄膜６を両端の電極パッド部７ａ，
７ｂ間で蛇行形状にパターニングする。
(57) Abstract: Provided is a method of manufacturing a platinum thin film resistor capable of improving the temperature coefficient of resistance of a platinum thin film by high-temperature annealing without lowering the adhesion of the platinum thin film to a substrate. SOLUTION: After forming a titanium layer 4 on a surface of an alumina substrate 2 by sputtering and forming a platinum thin film 6 on the titanium layer 4 by sputtering, the resistance temperature coefficient of the platinum thin film 6 is adjusted or increased. Annealing is performed to produce a platinum thin film resistor. At this time, at least one of the formation of the platinum thin film 6 and the formation of the titanium layer 4 is performed in a sputtering gas in which an oxygen gas is mixed with an argon gas, and annealing is performed in the atmosphere at a temperature of 1000 ° C. Platinum thin film 6 is connected to electrode pad portions 7a at both ends,
Patterning is performed between 7b in a meandering shape.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、薄膜抵抗体に関す
るものであり、特に抵抗温度係数が大きく且つ温度変化
に対する抵抗値変化の直線性の良好な白金薄膜抵抗体に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film resistor, and more particularly to a platinum thin film resistor having a large temperature coefficient of resistance and good linearity of change in resistance with respect to temperature change.
【０００２】[0002]
【従来の技術及び発明が解決しようとする課題】従来、
周囲温度の変化による抵抗体の電気抵抗値の変化を検知
して温度測定を行うための感温抵抗素子は、幅広い分野
で利用されており、この感温抵抗素子としては、抵抗体
を薄膜に形成し、しかもその寸法（パターン面積）を微
小にしたものが使用されている。このような薄膜感温抵
抗素子としては、流体の流量測定で使用される流量セン
サーの流量検知用感温素子や温度補償用感温素子が例示
される。2. Description of the Related Art
A temperature-sensitive resistance element for detecting a change in the electric resistance value of a resistor due to a change in the ambient temperature and performing temperature measurement is used in a wide range of fields. What is formed and the dimension (pattern area) is made minute is used. Examples of such a thin-film temperature-sensitive resistance element include a temperature-sensing element for flow rate detection and a temperature-sensitive element for temperature compensation of a flow rate sensor used for measuring the flow rate of a fluid.
【０００３】以上のような感温抵抗素子として利用され
る薄膜抵抗体としては、温度変化に対する抵抗値の変化
（抵抗温度係数）が大きく、その変化の直線性に優れて
いること、及び使用可能温度範囲が−２００℃〜＋８０
０℃と耐久性に優れていることから、白金薄膜抵抗体が
好ましいものとされている。白金薄膜抵抗体は、表面が
絶縁性の基板（例えばガラスやアルミナや表面に酸化シ
リコン膜を形成したシリコン基板）の絶縁性表面上に、
スパッタリングにより白金薄膜を形成した後に、エッチ
ングまたはリフトオフなどの微細パターン形成技術を用
いて白金薄膜のパターンを形成することで製造されてい
る。The thin-film resistor used as a temperature-sensitive resistor as described above has a large change in resistance (temperature coefficient of resistance) with respect to a temperature change, has excellent linearity of the change, and can be used. Temperature range -200 ° C to +80
Platinum thin film resistors are considered to be preferable because of their excellent durability at 0 ° C. The platinum thin film resistor is placed on the insulating surface of a substrate whose surface is insulative (for example, glass, alumina, or a silicon substrate having a silicon oxide film formed on the surface).
It is manufactured by forming a platinum thin film using a fine pattern forming technique such as etching or lift-off after forming a platinum thin film by sputtering.
【０００４】以上のような白金薄膜抵抗体の製造の際に
は、白金薄膜と基板との密着性を向上させるために基板
と白金薄膜との間にこれらの密着性を向上させるための
層たとえばチタン層を介在させることが行われている
（特開平１１−３５４３０２号公報参照）。In the production of the platinum thin film resistor as described above, a layer for improving the adhesion between the substrate and the platinum thin film, for example, a layer for improving the adhesion between the platinum thin film and the substrate, for example, is used. It has been practiced to interpose a titanium layer (see JP-A-11-354302).
【０００５】ところで、白金薄膜抵抗体では、スパッタ
リングによって作製された白金薄膜の抵抗温度係数（Ｔ
ＣＲ）の値を調整し或は向上させるために、１０００℃
程度またはそれ以上の高温でのアニールを大気中で行っ
ている（特開平８−２１９９０１号公報参照）。In a platinum thin film resistor, a platinum thin film produced by sputtering has a temperature coefficient of resistance (T.sub.T).
CR) to adjust or improve the value of
Annealing at a high temperature of about or higher is performed in the atmosphere (see Japanese Patent Application Laid-Open No. Hei 8-219901).
【０００６】しかし、このような高温アニールの際に
は、白金薄膜と基板との間に介在するチタン層の構成成
分の一部が白金薄膜へと移行することで白金薄膜の抵抗
温度係数を低下させるという問題のあることが指摘され
ている（特開平１１−１４２２０１号公報参照）。これ
は、高温アニール時にチタン層中のチタン原子が白金薄
膜中に拡散し、白金薄膜中に取り込まれる酸素と結合し
てＴｉＯとして白金薄膜中にとどまり、このＴｉＯは抵
抗温度特性において負の寄与をなすため、白金薄膜のも
つ抵抗温度係数の値を低下させるからであると考えられ
ている。However, during such high-temperature annealing, some of the components of the titanium layer interposed between the platinum thin film and the substrate migrate to the platinum thin film, thereby lowering the temperature coefficient of resistance of the platinum thin film. It has been pointed out that there is a problem of causing such a problem (see JP-A-11-142201). This is because during high-temperature annealing, titanium atoms in the titanium layer diffuse into the platinum thin film, combine with oxygen taken in the platinum thin film and remain in the platinum thin film as TiO, and this TiO has a negative contribution to the resistance temperature characteristic. It is thought that this is because the value of the temperature coefficient of resistance of the platinum thin film is reduced.
【０００７】そこで、本発明は、基板に対する白金薄膜
の密着性を低下させることなく、高温アニールによる白
金薄膜の抵抗温度係数向上の可能な白金薄膜抵抗体の製
造方法を提供することを目的とするものである。Accordingly, an object of the present invention is to provide a method of manufacturing a platinum thin film resistor capable of improving the temperature coefficient of resistance of a platinum thin film by high-temperature annealing without reducing the adhesion of the platinum thin film to a substrate. Things.
【０００８】[0008]
【課題を解決するための手段】本発明によれば、以上の
如き目的を達成するものとして、基板の電気絶縁性表面
上にスパッタリングによるチタン層の形成を行い、該チ
タン層上にスパッタリングによる白金薄膜の形成を行っ
た後に、該白金薄膜の抵抗温度係数を調整あるいは増大
させるアニールを行って白金薄膜抵抗体を製造する方法
において、前記白金薄膜の形成及び前記チタン層の形成
のうちの少なくとも一方を雰囲気中の酸素の存在下で行
うことを特徴とする、白金薄膜抵抗体の製造方法、が提
供される。According to the present invention, a titanium layer is formed on an electrically insulating surface of a substrate by sputtering, and a platinum layer is formed on the titanium layer by sputtering. After forming the thin film, a method of manufacturing a platinum thin film resistor by performing annealing to adjust or increase the temperature coefficient of resistance of the platinum thin film, wherein at least one of the formation of the platinum thin film and the formation of the titanium layer Is carried out in the presence of oxygen in the atmosphere.
【０００９】本発明の一態様においては、前記酸素は不
活性ガス中に酸素ガスを混合することで供給される。本
発明の一態様においては、前記白金薄膜の形成の際のス
パッタリングまたは前記チタン層の形成の際のスパッタ
リングを不活性ガスの存在下で行う。本発明の一態様に
おいては、前記アニールを大気中で温度９００℃〜１１
００℃の条件下で行う。In one embodiment of the present invention, the oxygen is supplied by mixing an inert gas with an oxygen gas. In one embodiment of the present invention, the sputtering for forming the platinum thin film or the sputtering for forming the titanium layer is performed in the presence of an inert gas. In one embodiment of the present invention, the annealing is performed in air at a temperature of 900 ° C. to 11 ° C.
It is performed under the condition of 00 ° C.
【００１０】本発明の一態様においては、前記白金薄膜
をパターニングする。In one embodiment of the present invention, the platinum thin film is patterned.
【００１１】[0011]
【発明の実施の形態】以下、本発明の実施の形態を、図
面を参照しながら説明する。図１は本発明による白金薄
膜抵抗体の製造方法の一実施形態を示す工程図である。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a process chart showing one embodiment of a method for manufacturing a platinum thin film resistor according to the present invention.
【００１２】先ず、図１（ａ）に模式的断面図を示すよ
うに、絶縁基板２の表面にスパッタリングによりチタン
層４を形成する。基板２は、例えば酸化アルミニウムを
主体とするアルミナ（Ａｌ2 Ｏ3 ）等の酸化物系の絶縁
体からなる。このチタン層形成のスパッタリングは、例
えば、次のような条件： 装置：マグネトロンスパッタリング装置 到達真空度＜６．０×１０-5Ｐａ 成膜圧力：０．６Ｐａ ガス流量：１２０ＳＣＣＭ［Ａｒ：Ｏ2 ＝９：１］ 成膜電力：１４００Ｗ（ＤＣ） 成膜温度：２５０℃ 膜厚：５ｎｍ で行うことができる。First, as shown in a schematic sectional view of FIG. 1A, a titanium layer 4 is formed on the surface of an insulating substrate 2 by sputtering. The substrate 2 is made of an oxide-based insulator such as alumina (Al 2 O 3 ) mainly composed of aluminum oxide. The sputtering for forming the titanium layer is performed, for example, under the following conditions: Apparatus: magnetron sputtering apparatus Ultimate vacuum <6.0 × 10 −5 Pa Film forming pressure: 0.6 Pa Gas flow rate: 120 SCCM [Ar: O 2 = 9: 1] Film formation power: 1400 W (DC) Film formation temperature: 250 ° C. Film thickness: 5 nm
【００１３】次に、図１（ｂ）に模式的断面図を示すよ
うに、チタン層４の表面にスパッタリングにより白金薄
膜６を形成する。この白金薄膜形成のスパッタリング
は、例えば、次のような条件： 装置：マグネトロンスパッタリング装置 到達真空度＜６．０×１０-5Ｐａ 成膜圧力：０．１８Ｐａ ガス流量：１０ＳＣＣＭ［Ａｒ：Ｏ2 ＝９：１］ 成膜電力：５００Ｗ（ＲＦ） 成膜温度：２５０℃ 膜厚：４００ｎｍ で行うことができる。Next, as shown in a schematic sectional view of FIG. 1B, a platinum thin film 6 is formed on the surface of the titanium layer 4 by sputtering. The sputtering for forming the platinum thin film is performed under the following conditions, for example: Apparatus: magnetron sputtering apparatus Ultimate vacuum <6.0 × 10 −5 Pa Film forming pressure: 0.18 Pa Gas flow rate: 10 SCCM [Ar: O 2 = 9: 1] Film formation power: 500 W (RF) Film formation temperature: 250 ° C. Film thickness: 400 nm
【００１４】続いて、温度１０００℃で５時間大気雰囲
気下でのアニールを行う。このアニールにより、基板２
との密着性が損なわれることなしに白金薄膜６の抵抗温
度係数の向上が実現する。Subsequently, annealing is performed at a temperature of 1000 ° C. for 5 hours in an air atmosphere. By this annealing, the substrate 2
The improvement of the temperature coefficient of resistance of the platinum thin film 6 is realized without impairing the adhesion with the platinum thin film 6.
【００１５】そして、図１（ｃ）に模式的平面図を示す
ように、エッチング法などにより、白金薄膜６を、両端
に１対の電極パッド部７ａ，７ｂを有する幅が例えば５
〜２５μｍで、全長が例えば４〜２３ｃｍの蛇行パター
ン形状とすることができる。As shown in a schematic plan view of FIG. 1C, a platinum thin film 6 is formed by etching or the like to have a pair of electrode pad portions 7a and 7b at both ends.
A meandering pattern shape of ２５25 μm and a total length of, for example, 4 to 23 cm can be provided.
【００１６】以上の実施形態ではチタン（Ｔｉ）層４の
形成の際のスパッタリングと白金（Ｐｔ）薄膜６の形成
の際のスパッタリングとの双方において不活性ガス（Ａ
ｒガス）中に酸素（Ｏ2 ）ガスを混合しているが、本発
明では、Ｔｉ層４の形成の際のスパッタリング及びＰｔ
薄膜６の形成の際のスパッタリングのうちのいずれか一
方で不活性ガス中にＯ2 ガスを混合してもよい。In the above embodiment, the inert gas (A) is used for both the sputtering for forming the titanium (Ti) layer 4 and the sputtering for forming the platinum (Pt) thin film 6.
r gas) is mixed with oxygen (O 2 ) gas, but in the present invention, sputtering and Pt during the formation of the Ti layer 4 are performed.
O 2 gas may be mixed in an inert gas in one of sputtering during the formation of the thin film 6.
【００１７】以上の実施形態では不活性ガス中への酸素
ガスの混合量は１０体積％とされているが、本発明で
は、不活性ガス中への酸素ガスの混合量は例えば０．５
〜３０体積％の範囲内とすることができ、好ましくは２
〜２０体積％の範囲内である。In the above embodiment, the mixing amount of the oxygen gas in the inert gas is set to 10% by volume. However, in the present invention, the mixing amount of the oxygen gas in the inert gas is, for example, 0.5%.
To 30% by volume, preferably 2% by volume.
It is in the range of ２０20% by volume.
【００１８】また、以上の実施形態ではアニール温度を
１０００℃としているが、本発明では、アニール温度を
例えば９００℃〜１１００℃の範囲内とすることができ
る。アニール温度が９００℃未満で低過ぎる場合には得
られる白金薄膜抵抗体の抵抗温度係数の特性が低下する
傾向にあり、アニール温度が１１００℃を越えて高過ぎ
る場合には得られる白金薄膜抵抗体の表面状態が劣化す
る傾向にある。In the above embodiment, the annealing temperature is set at 1000 ° C., but in the present invention, the annealing temperature can be set, for example, in the range of 900 ° C. to 1100 ° C. When the annealing temperature is lower than 900 ° C. and is too low, the characteristic of the temperature coefficient of resistance of the obtained platinum thin film resistor tends to decrease, and when the annealing temperature is higher than 1100 ° C. and the obtained platinum thin film resistor is obtained. Tends to deteriorate.
【００１９】また、以上の実施形態ではアニール時間を
５時間としているが、本発明では、アニール時間を例え
ば４時間以上とすることができる。アニール時間が４時
間未満で短過ぎる場合には得られる白金薄膜抵抗体の抵
抗値の経時変化率が大きくなる傾向にある。In the above embodiment, the annealing time is set to 5 hours. However, in the present invention, the annealing time can be set to, for example, 4 hours or more. If the annealing time is too short, less than 4 hours, the rate of change with time of the resistance value of the obtained platinum thin film resistor tends to increase.
【００２０】図２は、以上のようにして製造された白金
薄膜抵抗体の抵抗値と抵抗温度係数との関係の具体例を
示すものである。図２において： ・Ａ群は、Ｔｉ層４形成時にＡｒガス中にＯ2 ガスを混
合し、Ｐｔ薄膜６形成時にはＡｒガス中にＯ2 ガスを混
合しない場合 ・Ｂ群は、Ｔｉ層４形成時にはＡｒガス中にＯ2 ガスを
混合せず、Ｐｔ薄膜６形成時にＡｒガス中にＯ2 ガスを
混合した場合 ・Ｃ群は、Ｔｉ層４形成時及びＰｔ薄膜６形成時の双方
でＡｒガス中にＯ2ガスを混合した場合 ・Ｄ群（比較例）は、Ｔｉ層４形成時及びＰｔ薄膜６形
成時の双方でＡｒガス中にＯ2 ガスを混合しない場合 であり、各群について３つの試料を測定した。FIG. 2 shows a specific example of the relationship between the resistance value and the temperature coefficient of resistance of the platinum thin film resistor manufactured as described above. In Figure 2: · A group, the O 2 gas is mixed in Ar gas at Ti layer 4 formed, if at the time of Pt thin film 6 formed not mix O 2 gas into the Ar gas · B group, Ti layer 4 formed Sometimes O 2 gas is not mixed in Ar gas, but O 2 gas is mixed in Ar gas when forming Pt thin film 6. Group C is Ar gas in both forming Ti layer 4 and forming Pt thin film 6. In the case where O 2 gas was mixed therein. The D group (comparative example) was a case where O 2 gas was not mixed in Ar gas both when the Ti layer 4 was formed and when the Pt thin film 6 was formed. One sample was measured.
【００２１】図２から分かるように、得られた白金薄膜
抵抗体のＴＣＲ値は、従来法のＤ群のものでは３５００
ｐｐｍ／Ｋ程度であったが、本発明に属するＣ群のもの
では３７９０ｐｐｍ／Ｋ程度まで向上し、また本発明に
属するＡ群及びＢ群のものでも３６５０ｐｐｍ／Ｋ程度
まで向上させることができた。As can be seen from FIG. 2, the TCR value of the obtained platinum thin film resistor is 3500 for the D group of the conventional method.
Although it was about ppm / K, it was improved to about 3790 ppm / K in the group C belonging to the present invention, and was able to be improved to about 3650 ppm / K in the group A and B belonging to the present invention. .
【００２２】これは、酸素の存在下でスパッタリング成
膜することで、アニールの際のＰｔ薄膜６へのチタン原
子の拡散が抑制されること、及び、ゲッター効果により
Ｐｔ薄膜６中の不純物の悪影響が低減されることに基づ
くものと推測される。This is because the diffusion of titanium atoms into the Pt thin film 6 at the time of annealing is suppressed by forming a film by sputtering in the presence of oxygen, and the bad influence of impurities in the Pt thin film 6 due to the getter effect. Is presumed to be based on the reduction of
【００２３】上記Ｃ群の白金薄膜抵抗体についてＴＥＭ
分析を行ったところ、白金薄膜６中へのチタンの拡散は
確認されなかった。また、白金薄膜６中の元素分析の結
果においても、チタンは一切検出されなかった。この結
果から、酸素存在下で成膜することには、高温アニール
後においても白金薄膜６中へのチタンの拡散を抑制する
効果があることがわかる。The platinum thin film resistor of the above-mentioned group C is TEM
As a result of analysis, diffusion of titanium into the platinum thin film 6 was not confirmed. Also, in the results of elemental analysis in the platinum thin film 6, no titanium was detected. From these results, it can be seen that forming a film in the presence of oxygen has an effect of suppressing the diffusion of titanium into the platinum thin film 6 even after high-temperature annealing.
【００２４】尚、ピールテスト（カプトンテープによ
る）の結果、上記Ａ〜Ｃ群のいずれについても、白金薄
膜６と基板２との剥離は確認されず、膜の密着強度は少
なくとも従来法によるものと同等以上であることが確認
された。As a result of the peel test (using Kapton tape), no peeling of the platinum thin film 6 from the substrate 2 was confirmed in any of the above groups A to C, and the adhesion strength of the film was at least the value obtained by the conventional method. It was confirmed that they were equal or higher.
【００２５】図３に、上記Ａ〜Ｄ群について、１５０℃
での抵抗値Ｒ0 の経時変化の具体例を示す。また、図４
に、上記Ａ〜Ｄ群について、１５０℃でのＴＣＲの経時
変化の具体例を示す。これらの図から分かる様に、本発
明方法により製造された白金薄膜抵抗体は、抵抗値Ｒ0
やＴＣＲの経時変化においても、従来法によるものと同
等以上である。特に、Ｂ群のものは、Ｒ0 の７５０時間
経時変化で０．０８％以内であり、ＴＣＲの７５０時間
経時変化で０．１％以内であり、従来法によるもの（Ｄ
群）に対して優れている。FIG. 3 shows that the above groups A to D were treated at 150 ° C.
A specific example of the change with time of the resistance value R 0 at the time is shown. FIG.
Specific examples of changes over time in TCR at 150 ° C. for the above groups A to D are shown below. As can be seen from these figures, the platinum thin film resistor manufactured by the method of the present invention has a resistance R 0.
Also, the change with time of the TCR is equal to or greater than that of the conventional method. In particular, in the case of group B, the change in R 0 with aging for 750 hours was within 0.08%, and the change in TCR with 750 hours was within 0.1%.
Group).
【００２６】[0026]
【発明の効果】以上説明したように、本発明の白金薄膜
抵抗体の製造方法によれば、白金薄膜と基板との間にチ
タン層を介在させることで基板に対する白金薄膜の密着
性の向上をはかりながら、白金薄膜形成またはチタン層
形成のためのスパッタリングガス中に酸素ガスを混入し
ておくことで、高温アニールによる白金薄膜の抵抗温度
係数の十分な向上が可能となる。As described above, according to the method for manufacturing a platinum thin film resistor of the present invention, the adhesion of the platinum thin film to the substrate is improved by interposing the titanium layer between the platinum thin film and the substrate. By mixing the oxygen gas into the sputtering gas for forming the platinum thin film or the titanium layer while measuring, it is possible to sufficiently improve the temperature coefficient of resistance of the platinum thin film by high-temperature annealing.
【図１】本発明による白金薄膜抵抗体の製造方法の一実
施形態を示す工程図である。FIG. 1 is a process chart showing one embodiment of a method for manufacturing a platinum thin film resistor according to the present invention.
【図２】白金薄膜抵抗体の抵抗値と抵抗温度係数との関
係の具体例を示すグラフである。FIG. 2 is a graph showing a specific example of a relationship between a resistance value of a platinum thin film resistor and a temperature coefficient of resistance.
【図３】白金薄膜抵抗体の１５０℃での抵抗値Ｒ0 の経
時変化の具体例を示すグラフである。FIG. 3 is a graph showing a specific example of a temporal change of a resistance value R 0 at 150 ° C. of a platinum thin film resistor.
【図４】白金薄膜抵抗体の１５０℃でのＴＣＲの経時変
化の具体例を示すグラフである。FIG. 4 is a graph showing a specific example of a temporal change of TCR of a platinum thin film resistor at 150 ° C.
２ 絶縁基板 ４ チタン層 ６ 白金薄膜 ７ａ，７ｂ 白金薄膜の電極パッド部 2 Insulating substrate 4 Titanium layer 6 Platinum thin film 7a, 7b Electrode pad part of platinum thin film
Claims (5)
グによるチタン層の形成を行い、該チタン層上にスパッ
タリングによる白金薄膜の形成を行った後に、該白金薄
膜の抵抗温度係数を調整あるいは増大させるアニールを
行って白金薄膜抵抗体を製造する方法において、 前記白金薄膜の形成及び前記チタン層の形成のうちの少
なくとも一方を雰囲気中の酸素の存在下で行うことを特
徴とする、白金薄膜抵抗体の製造方法。1. After forming a titanium layer by sputtering on an electrically insulating surface of a substrate and forming a platinum thin film on the titanium layer by sputtering, the resistance temperature coefficient of the platinum thin film is adjusted or increased. A method of manufacturing a platinum thin film resistor by performing annealing, wherein at least one of the formation of the platinum thin film and the formation of the titanium layer is performed in the presence of oxygen in an atmosphere, Manufacturing method.
合することで供給されることを特徴とする、請求項１に
記載の白金薄膜抵抗体の製造方法。2. The method according to claim 1, wherein the oxygen is supplied by mixing oxygen gas with an inert gas.
グまたは前記チタン層の形成の際のスパッタリングを不
活性ガスの存在下で行うことを特徴とする、請求項１に
記載の白金薄膜抵抗体の製造方法。3. The platinum thin film resistor according to claim 1, wherein the sputtering for forming the platinum thin film or the sputtering for forming the titanium layer is performed in the presence of an inert gas. Production method.
１１００℃の条件下で行うことを特徴とする、請求項１
〜３のいずれかに記載の白金薄膜抵抗体の製造方法。4. The annealing is performed in the atmosphere at a temperature of 900 ° C.
2. The method according to claim 1, wherein the heat treatment is performed at 1100 ° C.
4. The method for producing a platinum thin-film resistor according to any one of claims 1 to 3.
特徴とする、請求項１〜４のいずれかに記載の白金薄膜
抵抗体の製造方法。5. The method for manufacturing a platinum thin film resistor according to claim 1, wherein said platinum thin film is patterned.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000102452A JP2001291607A (en) | 2000-04-04 | 2000-04-04 | Manufacturing method of platinum thin film resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000102452A JP2001291607A (en) | 2000-04-04 | 2000-04-04 | Manufacturing method of platinum thin film resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001291607A true JP2001291607A (en) | 2001-10-19 |
Family
ID=18616332
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000102452A Pending JP2001291607A (en) | 2000-04-04 | 2000-04-04 | Manufacturing method of platinum thin film resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001291607A (en) |
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| JP2007169671A (en) * | 2005-12-19 | 2007-07-05 | Nippon Telegr & Teleph Corp <Ntt> | Method for forming platinum thin film |
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|---|---|---|---|---|
| JP2007169671A (en) * | 2005-12-19 | 2007-07-05 | Nippon Telegr & Teleph Corp <Ntt> | Method for forming platinum thin film |
| WO2007091686A1 (en) * | 2006-02-09 | 2007-08-16 | Mitsui Mining & Smelting Co., Ltd. | Laminate, thin film sensor, thin film sensor module, and method for manufacturing the thin film sensor |
| JP2007243173A (en) * | 2006-02-09 | 2007-09-20 | Mitsui Mining & Smelting Co Ltd | LAMINATE, THIN FILM SENSOR AND THIN FILM SENSOR MODULE |
| WO2007114143A1 (en) | 2006-03-28 | 2007-10-11 | Mitsui Mining & Smelting Co., Ltd. | Method for fabricating thin film sensor, thin film sensor and thin film sensor module |
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