JP2001244168A - Exposure apparatus and method of manufacturing micro device using the exposure apparatus - Google Patents

Abstract

(57) [Summary] It is an object of the present invention to provide a high-performance exposure apparatus capable of sufficiently satisfying severe illumination conditions, and a more excellent method for manufacturing a micro device by exposing a finer pattern. A projection system for projecting a pattern formed on a mask onto a photosensitive substrate; an illumination optical system for forming an illumination area at a position on the mask; and a mask and the photosensitive substrate in a predetermined scanning exposure direction with respect to the projection system. Moving means for relatively moving along the scanning exposure direction; first illumination adjusting means for adjusting the illumination characteristics along the scanning exposure direction; second illumination adjusting means for adjusting the illumination characteristics in a direction intersecting the scanning exposure direction; First telecentricity adjusting means for giving a tilt component to the city; second telecentricity adjusting means for adjusting the telecentricity according to the position from the optical axis
Telecentricity adjustment means;

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention is suitable for manufacturing microdevices (semiconductor devices such as semiconductor devices, liquid crystal display devices, imaging devices (for example, CCDs), thin film magnetic heads, etc.) by a photolithography process. The present invention relates to an exposure apparatus and a method for manufacturing a good microdevice using the exposure apparatus.

[0002]

2. Description of the Related Art Conventionally, an exposure apparatus for manufacturing a semiconductor device provided with an illumination device of this type has been used to expose a circuit pattern formed on a mask to a photosensitive material such as a wafer coated with a reticle through a projection optical system. Projection transfer onto the substrate.

[0003] In particular, as an exposure apparatus using light in the soft X-ray region of about 5 nm to 20 nm (EUV light: Extreme Ultra-Violet light), for example, US Pat. No. 5,737,13
No. 7 is proposed.

[0004]

In order to transfer a finer pattern onto a photosensitive substrate on a photosensitive substrate, it is necessary to sufficiently satisfy even more severe illumination conditions in an illumination device.

[0005] However, there is no known adjustment mechanism for sufficiently satisfying severe illumination conditions.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a high-performance exposure apparatus capable of sufficiently satisfying severe illumination conditions, and a more excellent method of manufacturing a micro device by exposing a finer pattern.

[0007]

In order to achieve the above object, according to the first aspect of the present invention, in order to project a pattern formed on a mask onto a photosensitive substrate, the pattern is decentered with respect to an optical axis. A projection system including an exposure field; an illumination optical system for forming an illumination area at a position on the mask that is eccentric with respect to the optical axis of the projection system to guide a light beam for exposure to the exposure field; Moving means for moving the mask and the photosensitive substrate relative to the projection system along a predetermined scanning exposure direction; an illumination area formed on the mask or the projection formed on the photosensitive substrate First illumination adjusting means for adjusting the illumination characteristics along the scanning exposure direction in the exposure field of the system; and the scanning in the exposure field of the projection system formed on the illumination area formed on the mask or on the photosensitive substrate. Exposure direction Second illumination adjustment means for adjusting illumination characteristics in the direction intersecting; and an inclination component for telecentricity in an illumination area formed on the mask or an exposure field of the projection system formed on the photosensitive substrate. First telecentricity adjusting means for applying; adjusting telecentricity according to a position from the optical axis in an illumination area formed on the mask or an exposure field of the projection system formed on the photosensitive substrate. And second telecentricity adjustment means.

Further, in the invention according to claim 2, the illumination optical system forms an arc-shaped illumination area on the mask in a direction transverse to the scanning exposure direction.

Further, in the invention according to claim 3, in the first aspect,
A configuration in which the illumination adjustment unit applies an illuminance distribution component inclined along the scanning exposure direction, and the second illumination adjustment unit applies an illuminance distribution component inclined along a direction intersecting the scanning exposure direction; It was done.

[0010] In the invention according to claim 4, the illumination optical system includes a large number of illumination optical members, and the first and second illumination adjustment means include at least one of the multiple illumination optical members. One and the same illumination optical member is inclined or moved in different directions, or different ones of the plurality of illumination optical members are inclined or moved respectively.

Further, in the invention according to claim 5, in the first aspect, the first
The telecentricity adjustment means adjusts an illumination optical member different from the illumination optical member adjusted by the first and second illumination adjustment means, and the second telecentricity adjustment means adjusts the first telecentricity. A configuration in which an illumination optical member that is the same as the illumination optical member adjusted by the city adjustment unit or an illumination optical member that is different from the illumination optical member adjusted by the first telecentricity adjustment unit is adjusted. It is.

Further, in the invention according to claim 6, the illumination optical system includes a plurality of reflection members for illumination, and the first illumination adjustment means, the second illumination adjustment means, the first telecentricity adjustment means, and the first illumination adjustment means. The two-telecentricity adjustment means is configured to adjust the position of a part of the illumination reflecting member of the illumination optical system.

Further, in the invention according to claim 7, in the first aspect, the first
The second illumination adjustment means is configured to incline the same illumination reflecting member around different axes or to move the same illumination reflecting member in different directions.

Further, in the invention according to claim 8, the first type
The second telecentricity adjusting means is configured to move the same illumination reflecting member in directions different from each other.

According to the ninth aspect of the present invention, in the first aspect, the first
The second illumination adjusting means adjusts a lighting reflecting member different from the lighting reflecting member adjusted by the first and second telecentricity adjusting means.

Further, in the invention according to claim 10, the illumination optical system includes a light source means for supplying the light beam, a reflection type optical integrator for uniformizing an illumination distribution on the mask or the photosensitive substrate, and A light guide optical system is provided between the light source means and the reflection type optical integrator and guides a light beam from the light source means to the reflection type optical integrator.

According to the eleventh aspect of the present invention, there is provided an illumination condition changing device for changing an illumination condition in an illumination area formed on the mask or an illumination condition in an exposure field of the projection system formed on the photosensitive substrate. Means, and the first
The illumination adjustment unit and the second illumination adjustment unit may be configured such that the first telecentricity and the second telecentricity adjustment unit perform each adjustment according to a change in the illumination condition by the illumination condition changing unit. It is.

According to a twelfth aspect of the present invention, in the method for manufacturing a micro device using the exposure apparatus according to any one of the first to eleventh aspects, a step of illuminating the mask using the illumination optical system is provided. Exposing the pattern image of the mask to the photosensitive substrate using the projection system.

According to the thirteenth aspect of the present invention, an illumination optical system including a plurality of reflecting members for illumination and guiding a light beam for exposure to a mask; a projection system for projecting a pattern of the mask onto a photosensitive substrate; Moving means for moving the mask and the photosensitive substrate relative to the projection system along a predetermined scanning exposure direction; an illumination area formed on the mask or the projection formed on the photosensitive substrate To add a gradient component to telecentricity in the exposure field of view of the system
Telecentricity adjustment means; second telecentricity for adjusting telecentricity according to a position from the optical axis in an illumination area formed on the mask or an exposure field of the projection system formed on the photosensitive substrate. And a first and second telecentricity adjusting means, each of which adjusts a part of the illumination reflecting member of the illumination optical system.

Further, in the invention according to claim 14, the second telecentricity adjusting means sets the reflecting member for illumination adjusted by the first telecentricity adjusting means in a direction different from that of the first telecentricity adjusting means. Or an illumination reflection type member different from the illumination reflection member adjusted by the first telecentricity adjustment means.

Further, in the invention according to claim 15, the illumination optical system includes a light source means for supplying the light beam, a reflection type integrator for uniformizing an illumination distribution on the mask or the photosensitive substrate, and the light source. And a light guiding optical system disposed between the means and the reflection type integrator for guiding a light beam from the light source means to the reflection type integrator.

Further, in the invention according to claim 16, the projection system includes an exposure field decentered with respect to an optical axis, and the illumination optical system uses a plurality of reflection members for illumination for exposure. In order to guide the light beam to the exposure field, an illumination area is formed at a position on the mask that is eccentric with respect to the optical axis of the projection system.

Further, in the invention according to claim 17, an illumination condition change for changing an illumination condition in an illumination area formed on the mask or an illumination condition in an exposure field of the projection system formed on the photosensitive substrate. Means, and the first
The telecentricity and the second telecentricity adjusting means are configured to perform each adjustment according to the change of the lighting condition by the lighting condition changing means.

According to an eighteenth aspect of the present invention, in the method of manufacturing a micro device using the exposure apparatus according to any one of the eleventh to seventeenth aspects, a step of illuminating the mask using the illumination optical system includes the steps of: Exposing the pattern image of the mask to the photosensitive substrate using the projection system.

[0025]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment according to the present invention will be described below with reference to FIGS. FIG. 1 is a diagram showing a schematic configuration of a first embodiment according to the present invention, and FIG. 2 is a front view showing a configuration of a reflection element group 2 as a multiple light source forming optical system (optical integrator). FIG. 3 shows each reflection element E constituting the reflection type optical element group 2.
FIG. 4 is a diagram showing the configuration of FIG. 1, and FIG. 4 is a diagram showing the operation of the reflecting element group 2 as the multiple light source image forming optical system (optical integrator) shown in FIG.

As shown in FIG. 1, a laser beam (parallel light beam) supplied from a light source means such as a laser light source for supplying a laser beam having a wavelength of 200 mn or less is used as a multiple light source forming optical system (optical integrator). The light enters the reflecting element group 2 almost perpendicularly. In addition, as the light source means, for example,
ArF excimer laser that supplies laser light having a wavelength of 193 nm, F2 laser that supplies laser light having a wavelength of 157 nm, laser plasma X-ray source that emits X-rays having a wavelength of 10 nm to 15 nm, or 10 nm to 15 nm A synchrotron generator for supplying radiation having a wavelength can be used.

Here, the reflecting element group 2 is constituted by a large number of reflecting elements (optical elements) E arranged two-dimensionally and densely along a predetermined first reference plane P ₁ perpendicular to the YZ plane. ing. Specifically, as shown in FIG.
Has many reflective elements E having a reflective curved surface whose contour (outer shape) is formed in an arc shape. The reflection element group 2 includes a large number of rows of reflection elements arranged in the Z direction.
It has five rows along the direction. The five rows of reflecting elements are configured to be substantially circular as a whole.

The outline shape (arc shape) of the reflection element E
Is similar to the shape of an arc-shaped illumination region IF formed on a reflection mask 5 as a surface to be described later. Each reflective element E, as shown in FIGS. 3 (a) and (b), in a predetermined area eccentric from the optical axis Ax _E A portion of the reflection curved surface of a predetermined radius of curvature R _E, outline (outer shape) there has such a shape as to cut into an arc shape, the center C _E of the circular arc-shaped reflective element E is in the position of a height h _E from the optical axis Ax _E. Therefore, the eccentric reflecting surface RSE of each reflecting element E
, As shown in (b) of FIG. 3, constituted by an eccentric spherical mirror having a predetermined radius of curvature R _E. Incidentally, RS _E in the FIG. 3 (b) shows the effective reflective area of the reflective element E to effectively reflect the light beam incident from the light source means 1.

Therefore, as shown in FIG.
Optical axis Ax of element E_ERays incident in parallel directions along
The light (parallel light flux) L is reflected by the optical axis Ax of the reflection element E._ETop focus
Point position F_ETo form a light source image I. In addition, this
Focal length f of the reflecting element E at the time of_EIs the reflection of the reflection element E
Vertex O of curved surface_EAnd the focal position F of the reflection surface of the reflection element E _E
And the radius of curvature of the reflective surface of the reflective element E
R_EThen, the relationship of the following equation (1) is established. (1) f_E= -R_E/ 2. Returning to FIG.
The emitted laser light (parallel light beam)
Is divided into circular arcs by the
Offset position P_TwoLight sources corresponding to the number of reflective elements E
An image is formed. In other words, the reflection element group 2 is configured.
Each optical axis Ax of many reflective elements E_EDirection parallel to
If a laser beam is incident on the reflective element E,
Each optical axis Ax_ETop focus position
F_EPlane P passing through_TwoLight source images I are respectively formed. Many
P on which a number of light source images I are formed_TwoHas a substantial number
Is formed. Therefore, the reflection element group 2 has many
Light source image forming optical system for forming a number of light source images I,
Has a function as a multiple light source forming optical system that forms a secondary light source
ing.

The light beam from the plurality of light source images I is incident on the condenser reflector 3 having an optical axis Ax _C as the condenser optical system. The condenser reflector 3 is composed of one spherical mirror having an effective reflecting surface at a position away from the optical axis Ax _C, the spherical mirror has a predetermined radius of curvature R _C. Optical axis Ax of condenser reflector 3
_C passes through the center position of a number of light source images I are formed by the optical element group 2 (the plane P ₂ of the optical axis Ax _C and the light source images I are formed intersects position). However, condenser reflector 3
Focus position of are present on the optical axis Ax _C.

The optical axis Ax _C of the condenser reflecting mirror 3
Is parallel to the optical axis Ax _E1 of a number of optical elements E ₁ constituting the optical element group 2. After being condensed by the condenser reflecting mirror 3, the light fluxes from the multiple light source images I are respectively reflected and condensed by the reflective mask 5 as the irradiation surface via the plane mirror 4 as the deflecting mirror in an arc shape. To illuminate. FIG. 4 shows a state of an arc-shaped illumination region IF formed on the reflective mask 5 when viewed from the direction indicated by the arrow A in FIG. center of curvature O _IF of the illumination field IF is present on the optical axis Ax _P of the projection system shown in FIG. Also, if the plane mirror 4 in FIG. 1 is removed, the illumination area IF becomes the irradiation surface IP in FIG.
And the curvature center O of the illumination area IF at this time
_IF is present on the optical axis Ax _C of the condenser optical system 3.

Therefore, in the example shown in FIG.
Optical axis Ax of optical system 3_CIs deflected by 90 ° by the plane mirror 4.
Although not oriented, the virtual mirror 4 shown in FIG.
The optical axis Ax of the condenser optical system 3 at the launch surface 4a_C90
°, the optical axis Ax of the condenser optical system 3_CWhen
Optical axis Ax of projection system 6_PMeans that the reflection mask 5 is coaxial
Become. Therefore, these optical axes (Ax_C, Ax_P) Is light
It can be said that they are coaxial. Therefore, each optical axis (Ax_C,
Ax_P) Is the center of curvature O of the arc-shaped illumination area IF. _IFThe optical
The condenser optical system 3 and the projection system 6 are
Is placed.

On the surface of the reflective mask 5, a predetermined circuit pattern is formed.
Are held on a mask stage MS that can move two-dimensionally along the XY plane. The light reflected by the reflective mask 5 is imaged via a projection system 6 on a wafer W coated with a resist as a photosensitive substrate, and a pattern image of the arc-shaped reflective mask 5 is projected thereon. Transcribed. The wafer 7 is held on a substrate stage WS that can move two-dimensionally along the XY plane.

Here, the mask stage MS moves two-dimensionally along the XY plane via the first drive system D ₁ , and the substrate stage WS moves along the XY plane via the second drive system D _2. Move two-dimensionally. These two drive systems (D ₁ ,
In D ₂ ), each drive amount is controlled by the control system 8. Therefore, the control system 8 has two drive systems (D ₁ , D ₂ )
By moving the mask stage MS and the substrate stage WS in directions opposite to each other (in the direction of the arrow) via
The entire pattern formed on the reflective mask 5 is scanned and exposed on the wafer W via the projection system 6. Thereby, a good circuit pattern in the photolithography process for manufacturing a semiconductor device is transferred onto the wafer 7, so that a good semiconductor device can be manufactured.

The projection system 6 having an optical axis Ax _P is composed of off-axis type of reduction system with four aspherical mirror having an effective reflecting surface at a position away from the optical axis Ax _C (6 a to 6 d) Have been. Then, the projection system 6 has an arc-shaped field in a position away from the optical axis Ax _C in both the object plane (mask 5) and the image plane (wafer 7). In the projection system 6, the arc-shaped visual field on the object plane (mask 5) has a size corresponding to the arc-shaped illumination area IF formed on the mask 5 by the illumination system.

The first, third and fourth aspheric mirrors (6
a, 6c, 6d) are constituted by concave aspheric mirrors, and the second aspheric mirror 6b is constituted by a convex aspheric mirror. Pupil of the projection system 6 is present on the reflective surface of the third aspherical mirror 6c, the aperture stop, and the like is provided at a position P _S of the pupil.

Next, the operation of the optical element group 2 of the example shown in FIG. 1 will be described with reference to FIG. FIG.
FIG. 5 is an enlarged view of a portion of an illumination device that illuminates the reflection mask 5 shown in FIG. 1. In FIG. 5, the planar mirror 4 is omitted for easy understanding of description, and the reflection element is omitted. shall group 2 is composed of three reflective elements (E _a ~E _c).

As described with reference to FIG.
Includes three reflective elements (E _{a to} E _c ) arranged along a predetermined reference plane P ₁ , and the predetermined reference plane P
₁ is parallel to the focal position (position of the center of curvature) plane passing through P ₂ of the reflective elements (E _a to E _c) (YZ plane). As shown in FIG. 5, the laser beam (parallel light flux) incident on the reflective element E _a in the reflective element group 2, wavefront dividing the arc-shaped light beam so as to correspond to the contour shape of the reflective surface of the reflective element E _a is, the wavefront divided arc-shaped light beam (light flux shown by the solid line) forms a light source image I _a by the focusing action of the reflective surface of the reflective element E _a. Thereafter, the light beam from the light source image I _a is condensed by the reflection plane of the condenser optical system 3,
The reflective mask 5 is illuminated in an arc shape from an oblique direction. 5 is the width direction of the circular illumination area formed on the reflective mask 5.

Further, the laser light incident on the reflective element Ec in reflective element group 2 (parallel light flux), are wavefront splitting an arc-shaped light beam so as to correspond to the contour shape of the reflective surface of the optical element E _c, wavefront divided arc-shaped light beam (light flux shown by the solid line) forms a light source image I _c by the focusing action of the reflective surface of the reflective element E _c. Thereafter, the light beam from the light source image I _c is condensed by the reflection plane of the condenser optical system 3,
The reflective mask 5 is illuminated in an arc shape so as to overlap with an arc-shaped illumination region formed by a light flux shown by a solid line.

As described above, since the light that has passed through each of the reflection elements in the reflection element group 2 illuminates the reflection type mask 5 in an arc shape in a superimposed manner, uniform illumination can be achieved. As shown in FIG. 1, a light source image formed by each reflecting element in the reflecting element group 2 is re-imaged at the position P _S of the pupil of the projection system 6 (the entrance pupil of the projection system 6). So-called Koehler illumination is achieved.

As shown in the first embodiment, in order to expose the pattern of the mask 5 to the photosensitive substrate 7, it is assumed that all of the illuminating device and the projection system are composed of reflective members and reflective elements. However, it is possible to efficiently form an arc-shaped illumination region having uniform illuminance on the mask while substantially maintaining the Koehler illumination condition. By setting the projection relationship of the condenser optical system 3 to orthographic projection, the reflective mask 5 can be illuminated with a uniform numerical aperture NA regardless of the direction.

Further, in Uyo shown in FIG. 2, by a large number of reflective elements E are densely arranged outer shape of the reflective element group 2 (contour) is a substantially circular shape, a number that is formed at a position P ₂ The outer shape (outline) of the secondary light source formed by the light source image is substantially circular. Therefore, by simultaneously making the projection relationship of the condenser optical system 3 orthographic and the outer shape (outline) of the secondary light source, the spatial coherency in the illumination area IF formed on the mask 5 is reduced. And the direction can be uniform.

Further, the shape of the reflecting surface of each reflecting element in the reflecting element group 2 is configured so that the projection relationship is the same as that of the condenser optical system 3, so that the reflecting element group 2 and the condenser optical system 3 can be used. Thus, the illuminance in the arc-shaped illumination region formed on the reflective mask 5 can be made more uniform without causing distortion. In the above, an example has been described in which each of the reflecting elements E constituting the reflecting element group 2 and the condenser mirror constituting the condenser optical system 3 are both decentered spherical reflecting surfaces. However, these may be made aspherical. it can.

Thus, specific numerical values of the reflection element group 2 and the condenser optical system 3 in the exposure apparatus shown in FIG. In the numerical examples given below, a case is shown in which each of the reflecting elements E constituting the reflecting element group 2 and the condenser mirror constituting the condenser optical system 3 are both aspherical. As shown in FIG. 4, the curvature R _IF of the arc of the arc-shaped illumination region IF formed on the reflection mask 5 is 96 mm, the angle α _IF of the arc of the illumination region IF is 60 °, and the arc-shaped illumination region IF. Distance L _IF between both ends of 96 mm, illumination area IF
6mm width t _IF of arc, 0.015 illumination numerical aperture NA of over reflective mask 5, if 30 mrad (i.e. the inclination of the principal ray of the illumination light relative to the normal of the reflective mask 5, the incident of the projection system 6 The pupil position is the same as that of 3119 mm from the reflection mask 5), and the beam diameter φ supplied from the laser light source is about 42 mm.

Further, as shown in FIG.
The reflection curved surface (aspheric surface) of the reflection element E in the subgroup 2 is AS_EWhen
And the vertex O of the reflection curved surface of the reflection element E_EThe reference sphere at
_E, The center of curvature of the reference sphere is O_RE, Reflective surface of reflective element E
Vertex O_ESurface of the reflective element E perpendicular to the tangent plane at
Vertex O_EThrough the X axis (the optical axis Ax of the reflective element E). _E
Is the X axis), and the vertex O of the reflection curved surface of the reflection element E is_EContact with
The vertex O of the reflection surface of the reflection element E which is parallel to the plane and is_EPass through
Reflection of the reflective element E where the direction is the Y axis and the X axis and the Y axis intersect
Vertex O of curved surface_EConsider the XY coordinates with the origin as.

Here, FIG. 6A is a sectional view of a reflection curved surface of the reflection element E in the reflection element group 2, and FIG. It shows a front view. X-axis (optical axis Ax) from the tangent plane at the vertex O _E of the reflection curved surface of the reflection element E to the reflection surface (aspheric surface) of the reflection element E
The distance along the direction of _E) x, X-axis (the distance along the direction of Y-axis from the optical axis Ax _E) to the reflective surface of the reflective element E (aspherical) y, the reflection curved surface of the reflective element E Radius of curvature of reference spherical surface S _E passing through vertex O _E (reference radius of curvature of reflective element E)
Is R _E , and the aspheric coefficients are C ₂ , C ₄ , C ₆ , C ₈ and C ₁₀
In this case, the reflection surface of each reflection element E constituting the reflection element group 2 is constituted by an aspheric surface expressed by the following aspheric expression. ^{x (y) = (y 2} / R E) / [1+ (1-y ² /
R _E ^{2) 0.5] _{+ C 2 y 2 + C 4}} y 4 + C 6 y 6 + C 8
^{_{y 8 + C 10 y 10 R}} E = -183.3211 C 2 = -5.37852 × 10 -4 C 4 = -4.67282 × 10 -8 C 6 = -2.11339 × 10 -10 C 8 = 5 each reflective element E which constitute a _{^{.71431 × 10 -12 C 10 = -5.18051}} × 10 -14 reflective element group 2 is shown in FIG. 6 (a)
As shown, in the cross direction of the mirror has a reflection sectional shape sandwiched between the height y ₂ from the height y ₁ and the optical axis Ax _E from the optical axis Ax _E, shown in FIG. 6 (b) As shown in the figure, in the front direction, the arc-shaped aspherical eccentric mirror has an arc opening angle α _E of 60 ° and a length between both ends of the arc of 5.25 mm. The height y ₁ from the optical axis Ax _E 5.0
It is 85 mm, the height y ₂ from the optical axis Ax _E 5.41
5 mm.

[0047] In this case, the light source image I formed by the reflective element E is in the direction of the optical axis Ax _E of the reflective element E, 76.56Mm from the apex O _E of the reflective curved surface of the reflective element E (=
Located x _I) a position apart, the optical axis Ax _E of the reflective element E
And the direction perpendicular, from the central diameter of the circular arc of the reflective element E to the position of 5.25mm apart optical axis Ax _E. The position of the light source image I in a direction orthogonal to the optical axis Ax _E of the reflective element E, 5.085M from the outer diameter of the arc of the reflective element E
m (= y ₁₎ in the position of apart optical axis Ax _E, also, 5.415Mm from the outer diameter of the arc of the reflective element E (= y
₂₎ apart in the position of the optical axis Ax _E.

As shown in FIG. 2, a good reflection element group 2 can be constructed by arranging a large number of eccentric aspherical reflection elements E having the above dimensions.
Next, specific numerical examples of the condenser mirror 3 as a condenser optical system in the case of using a large number of decentered aspherical reflective elements E having the above dimensions will be described.

As shown in FIG. 7, the condenser mirror 3
The reflection curved surface (aspherical surface) and AS _C, the reference spherical surface S _C at the apex O _C of the reflection curved surface of the condenser mirror 3, a center of curvature of a reference sphere at O _RC, the apex of the reflection curved surface of the condenser mirror 3 O _C of Perpendicular to the tangent plane and the condenser mirror 3
The direction passing through the vertex O _C of the reflection curved surface is defined as the X axis (the optical axis Ax _C of the condenser mirror 3 is the X axis), and the reflection of the condenser mirror 3 is parallel to the tangent plane at the vertex O _C of the reflection curved surface of the condenser mirror 3. the direction passing through the vertex O _C of the curved surface Y
Axis, and the X-axis and Y-axis consider XY coordinate having an origin the apex O _c of the reflection curved surface of the condenser mirror 3 intersect.

Here, FIG. 7 shows the reverse of the condenser mirror 3.
FIG. 4 shows a sectional view of a curved surface. Of condenser mirror 3
Vertex O of reflection surface_CFrom the tangent plane at the condenser mirror
X axis (optical axis Ax) up to the reflective surface (aspherical surface) 3_C)Who
The distance along the direction is x, X axis (optical axis Ax_C) From Conden
In the direction of the Y axis up to the reflecting surface (aspheric surface) of the thermistor 3
The distance along the y is the top of the reflection curved surface of the condenser mirror 3
Point O_cRadius of curvature of reference sphere passing through (condenser mirror
3) is R_CAnd the aspheric coefficient is C_Two, C_Four,
C₆, C₈And C_TenAnd the condenser mirror 3
Consists of an aspheric surface expressed by the following aspheric expression
Is done. x (y) = (y^Two/ R_C) / [1+ (1-y^Two/
R_C ^Two)^0.5] + C_Twoy^Two+ C_Foury^Four+ C₆y⁶+ C₈
y⁸+ C_Teny^Ten R_C= -3518.774523 C_Two= −3.64753 × 10^-Five C_Four= −1.71519 × 10^-11 C₆= 1.03873 × 10^-15 C₈= −3.84891 × 10^-20 C_Ten= 5.1369 × 10^{-twenty five} However, the optical axis Ax of the condenser mirror 3_CPlane orthogonal to
P_TwoShows a light source image I formed by the reflective element group 2
Plane P on which the light source image I is formed _TwoIs
Vertex O of the reflection curved surface of the condenser mirror 3_CFrom the optical axis Ax
_CAlong with 2009.8 mm (x_{I c}) Just away
is there.

The illuminance distribution and the spatial coherency can be improved by the reflecting element group 2 composed of a large number of reflecting elements E having the eccentric aspherical reflecting surface and the eccentric aspherical type condenser mirror 3 shown in the above numerical examples. A uniform arc-shaped irradiation region IF is formed. At this time, as shown in FIG. 7, the center C _{IF in} the width direction of the arc-shaped irradiation region IF formed by the condenser mirror 3 is equal to the condenser mirror 3.
In the direction of the optical axis Ax _C is located from the apex O _C of the reflection curved surface of the condenser mirror 3 to 1400mm (= x _M) apart position, in the height direction of the optical axis Ax _C of the condenser mirror 3, its optical axis from Ax _C at the position of 96 (= y _MC).

With the above configuration, it is possible to form an illumination area IF having uniform illuminance and spatial coherency on the reflective mask 5. The focal length of each optical element E constituting the optical element group 2 is f _F , and the condenser optical system 3
It is preferable that the following formula (2) is satisfied when the focal length of f is set to f _C. (2) 0.01 <| f _F / f _C | <0.5 When the value exceeds the upper limit of the expression (2), when each optical element constituting the optical element group 2 has an appropriate power, The focal length of the condenser optics is too short. For this reason, a large aberration occurs in the condenser optical system, so that it is difficult to form a uniform arc-shaped illumination area on the mask 5. On the other hand, if the lower limit of the expression (2) is exceeded, when the respective optical elements constituting the optical element group have appropriate power, the focal length of the condenser optical system becomes too long and the condenser optical system itself becomes large. This makes it difficult to make the device compact.

Incidentally, according to the numerical examples of the optical elements E and the condenser mirror 3 constituting the optical element group 2 described above, the corresponding values of the above equation (2) will be listed. As described above, the curvature radius R _E of the optical elements constituting the optical element group 2 -1
83.3211 mm, the reference focal length f _F of the optical element E is 91.66055 mm (f _F = −R _E).
/ 2). Further, since the radius of curvature R _C of the condenser mirror 3 is -3518.74523Mm, the focal length f _C of the reference of the optical element E 1759.3726M
m (f _C = −R _c / 2). Therefore, | f _F / f _C
| = 0.052, which satisfies the relationship shown in the above equation, and it can be understood that the apparatus is configured compact while maintaining a favorable illumination area.

By the way, in the embodiment shown in FIG.
It is necessary to improve the illumination characteristics (illumination distribution, telecentricity, etc.) on the reflection mask 5 or the photosensitive substrate 7 as the object to be irradiated.

First, the principle and mechanism of adjusting the illumination distribution of the reflective mask 5 or the photosensitive substrate 7 as an object to be irradiated will be described with reference to FIGS. still,
It is assumed that a light beam having a normal distribution (Gaussian distribution) intensity distribution is supplied from the light source unit 1 shown in FIG.

FIG. 23 shows the illuminance distribution (or light intensity distribution) formed in the arc-shaped illumination region IF formed on the reflective mask 5 or the photosensitive substrate 7 in the embodiment shown in FIG. Is shown.

[0057] However, in FIG. 23, IN represents the illuminance (or light intensity), DI ₁ indicates a scanning direction (scanning exposure direction), also ID _a2 is the non-scanning direction DI ₂ (scanning direction DI ₁
(A direction orthogonal to). Further, (a) in FIG. 23, (b) and in _{(c), ID a1, ID} b1 and ID _c1 shows the illuminance distribution in the scanning direction DI _1, ID _a2, ID _b2 and ID _c2 is non-scanning shows the illuminance distribution in the direction DI ₂ (direction perpendicular to the scanning direction DI _1). In the example the scanning direction DI ₁ corresponds to the X-direction in the example shown in FIG. 1, the non-scanning direction DI ₂ (direction perpendicular to the scanning direction DI ₁₎ in FIG. 23 is shown in FIG. 1 in FIG. 23 Y Corresponding to the direction.

As shown in FIG. 23B, an arc-shaped illumination region I formed on the reflective mask 5 or the photosensitive substrate 7 is formed.
In the case where a rotationally symmetric illuminance distribution ID _b2 is generated in the non-scanning direction DI _{2 of} F (the direction orthogonal to the scanning direction DI ₁ ), an inclination that corrects the illuminance distribution ID _b1 in the scanning direction DI ₁ is used. imparting (illuminance component which is inclined contrary to the illumination distribution ID _b1 in the scanning direction DI ₁₎ illuminance component. This makes it possible to correct the rotationally symmetric illuminance distribution ID _b2 .

[0059] Therefore, in the embodiment shown in FIG. 1, about the first axis Ax ₁ that is parallel to the perpendicular and the Y direction and the light beam center (illumination optical axis Ax _c) at the exit side of the light source means 1, an arrow The light source means 1 is inclined by a predetermined amount as shown in a direction T1. Thereby, the rotationally symmetric illuminance distribution ID _b2 shown in FIG. _23B is corrected, and as a result, the illuminance distribution ID _b2 becomes flat.

As shown in FIG. 23C, the non-scanning direction DI ₂ (the direction orthogonal to the scanning direction DI _{1) of the} arc-shaped illumination area IF formed on the reflective mask 5 or the photosensitive substrate 7. ), When the illuminance distribution ID _c2 having the tilt component is generated, the non-scanning direction DI ₂ (the scanning direction DI ₂
Imparting inclined illumination component such as to correct the illumination distribution ID _c2 in ₁ and orthogonal directions) (illuminance component which is inclined contrary to the illumination distribution ID _c2 in the non-scanning direction DI _2). This makes it possible to correct the illuminance distribution _IDc2 having a tilt component.

[0061] Therefore, in the embodiment shown in FIG. 1, about the second axis Ax ₂ comprising light beam center at the exit side of the light source means 1 (illumination optical axis Ax _c) perpendicular and parallel to the Z direction, arrow By inclining the light source means 1 by a predetermined amount as shown in the direction T2, the rotationally symmetric illuminance distribution ID _c2 shown in FIG. _23C is corrected, and as a result, the illuminance distribution ID _c2 becomes flat.

If the first axis Ax ₁ and the second axis Ax ₂ shown in FIG. 1 satisfy a relationship orthogonal to each other, the first axis Ax ₁ is located at an arbitrary position parallel to the Y axis. 2-axis A
x ₂ can be set to the setting at any position parallel to the X axis.

Next, referring to FIGS. 1 and 24, the reflection type mask 5 or the photosensitive substrate 7 as an object to be irradiated will be described.
The principle and mechanism of adjustment of the telecentricity will be described.

Here, FIG. 24 shows the telecentricity (corresponding to the illumination optical axis) formed in the arc-shaped illumination region IF formed on the reflective mask 5 or the photosensitive substrate 7 in the embodiment shown in FIG. (Parallelism of the principal ray or orthogonality of the principal ray to the surface to be irradiated) is schematically shown. That is, FIG. 24 schematically shows the embodiment and the like shown in FIG. 1 for easy understanding, but in FIG. 24, the aperture stop 120 that defines the secondary light source is the same as that shown in FIG. The optical member 130 corresponds to the reflection optical integrator 2 of each example described later, the optical member 130 corresponds to the condenser reflection mirror 3 of each example described later, and the irradiated surface 140 corresponds to FIG.
And the reflective mask 5 or the photosensitive substrate 7 in each example described later.

FIG. 24A shows a state in which the light source side focal position F of the optical member 130 coincides with the center of the aperture stop 120 and is completely telecentric (telecentric).
(B) shows that the center of the aperture stop 120 is relatively eccentric relative to the light source side focal position F of the optical member 130 in the direction orthogonal to the optical axis Ax by a displacement amount Δ1 and has a telecentricity tilt component (tilted telecentric (C) shows a state in which the focal position on the light source side of the optical member 130 and the center of the aperture stop 120 are displaced along the optical axis by a displacement amount Δ2 and correspond to the position from the optical axis Ax. This shows a state in which telecentricity changes isotropically (magnification telecentricity occurs).

As shown in FIG. 24B, an arc-shaped illumination region I formed on the reflective mask 5 or the photosensitive substrate 7 is formed.
In F, when a tilt component (tilt telecentricity) is generated in the telecentricity, the amount of displacement of the aperture stop 120 with respect to the optical member 130 in the reverse direction (downward along the direction orthogonal to the optical axis Ax). An eccentricity of −Δ1 is applied to provide a tilted telecentric component that is tilted in the opposite direction. Thereby, the inclination component of the telecentricity can be corrected.

Therefore, in the embodiment shown in FIG. 1, the reflection type optical integrator 2 is connected to the illumination optical axis Ax _c (X
24B, the tilt component of the telecentricity as shown in FIG. 24B is corrected.

Further, as shown in FIG. 24C, in an arc-shaped illumination area IF formed on the reflective mask 5 or the photosensitive substrate 7, the telecentricity is equal depending on the position from the optical axis. When the optical element 130 changes in the anisotropic direction (the magnification telecentricity occurs), the aperture stop 12
0 is moved in the opposite direction along the optical axis Ax (to the left along the optical axis Ax) by the amount of displacement −Δ2, and telecentricity in the opposite direction isotropically according to the position from the optical axis Ax ( (A telecentric component in the reverse direction). This makes it possible to correct a change in telecentricity that isotropically occurs according to the position from the optical axis Ax.

Therefore, in the embodiment shown in FIG. 1, the reflection type optical integrator 2 is connected to the illumination optical axis Ax _c (X
2) by a predetermined amount along the
Changes in telecentricity generated isotropically in accordance with the position of the optical axis Ax _c as shown in 4 (c) is corrected.

Next, FIG. 1 and FIG.
The adjustment flow of the illumination characteristics (illumination distribution, telecentricity, etc.) on the photosensitive substrate 7 as the object to be irradiated will be described with reference to FIG. (Step 1) First, in Step 1, an illumination characteristic measuring mask having a uniform reflection surface is placed on the mask stage MS, and the optical characteristic on the surface of the photosensitive substrate 7 (the image forming plane of the projection system 6) is set. Is measured. When measuring the illumination characteristics after the exposure step, the exposure reflection mask 5 mounted on the mask stage MS is replaced with the illumination characteristic measurement mask.

When the setting of the illumination characteristic measuring mask on the mask stage MS is completed, the control system 8 sets the driving system D ₂
, The illumination characteristic measuring sensor IS provided at one end of the substrate stage WS is positioned on the image plane (or the exposure field) of the projection system 6. Then, the control system 8 moves two-dimensionally in the imaging plane of the projection system 6 of the substrate stage WS via a driving system D ₂ (or exposure field), illumination characteristic measuring sensor IS is
The illumination characteristic information in the image plane (or the exposure field) of the projection system 6 can be detected in a two-dimensional matrix. An output signal from the illumination characteristic measuring sensor IS obtained for each position in the image plane (or exposure field) of the projection system 6 is input to the control system 8, and the measurement result is electrically connected to the control system 8. The connected display device (not shown) displays illumination characteristic information (illuminance distribution, telecentricity, etc.) within the image plane (or exposure field) of the projection system 6. (Step 2) Based on the measurement result obtained in the above step 1, the control system 8 performs a predetermined calculation to determine whether or not the current illumination characteristic is acceptable. If the measured illumination characteristics are acceptable, the adjustment process flow shown in FIG. 25 is completed, and the illumination characteristic measurement mask placed on the mask stage MS is replaced with the exposure reflection mask 5. Then, the exposure operation is started.

On the other hand, if the measured illumination characteristics cannot be tolerated, the process proceeds to step 3 as an adjustment process. (Step 3) The control system 8 on the basis of the measurement results obtained in the above step 1, after calculating the correction amount of the illumination characteristics, the first adjusting system (drive system) AD ₁ ~ 4 adjustment system (drive system) by driving at least one of the AD _4, for example,
Correction of illuminance distribution and correction of telecentricity are performed.

More specifically, the first adjustment system AD ₁ is based on the output from the control system 8 and has the first axis Ax ₁ as the center.
The light source means 1 is inclined as shown in the arrow direction T1. Thereby, the arc-shaped illumination region IF formed on the substrate 7
The rotationally symmetric illuminance distribution _IDb2 along the Y direction in the (exposure area or the exposure field of the projection system 6) is corrected, and the illuminance distribution _IDb2 becomes flat (see FIG. _23B ).

The second adjustment system AD_TwoFrom the control system 8
Based on the output of the first axis Ax₁The second axis Ax orthogonal to
_Two, The light source means 1 as shown in the arrow direction T2.
Tilt. Thus, an arc formed on the substrate 7
Illumination area IF (exposure area or exposure field of projection system 6)
Intensity distribution ID having a tilt component along the Y direction at _c2
Is corrected and the illuminance distribution ID_c2Becomes flat (FIG. 23)
(C)).

The third adjustment system AD ₃ moves the reflection type optical integrator 2 along a plane (YZ plane) orthogonal to the illumination optical axis Ax _c (X direction) based on the output from the control system 8. (Eccentricity). Thereby, the inclination component (inclination telecentricity) of the telecentricity is corrected (see FIG. 24B).

The fourth adjustment system AD ₄ moves the reflection type optical integrator 2 along the illumination optical axis Ax _c (in the X direction) based on the output from the control system 8. As a result, a change in telecentricity (magnification telecentricity) that isotropically occurs according to the position from the optical axis is corrected (see FIG. 24C).

The _first to fourth adjustment systems (drive systems) AD ₁ to AD 4
By driving at least one of the adjustment system (drive system) AD ₄ , for example, after the correction of the illuminance distribution and the correction of the telecentricity are completed, the process returns to step 1 again to return to the projection system 6.
The illumination characteristics within the image forming plane (or the exposure visual field) are measured.
Then, by checking the illumination characteristics in the imaging plane (or the exposure visual field) of the projection system 6 in step 1, if the measured illumination characteristics are acceptable, the adjustment flow shown in FIG. 25 is completed. . After that, the illumination characteristic measuring mask placed on the mask stage MS is replaced with the exposure reflection mask 5, and the exposure operation is started.

Further, by confirming the illumination characteristics in the image forming plane (or the exposure visual field) of the projection system 6 in step 1, if
If the measured illumination characteristics are not acceptable, step 3 proceeds and an adjustment process is performed. Then, in the measurement step in step 1, the steps 1 to 3 are repeated until it is determined that the illumination characteristics are acceptable.

The adjustment flow shown in FIG. 25 is not limited to the automatic control by the control system 8, and may be executed manually. For example, in step 3 described above, the control system 8 controls a drive system (AD _{1 to} AD ₄ ) such as a motor as an adjustment system, but controls the four adjustment systems (AD _{1 to} AD ₄ ). Without using the control by these four adjustment systems (AD ₁ to
AD ₄ ) may be a mechanical or electrical adjustment mechanism that can be adjusted by an operator. In this case, the worker can correct the illuminance distribution and the telecentricity via the _four adjustment systems (AD _{1 to} AD ₄ ) based on the measurement result of step 1.

In the measurement process in step 1 described above, the illumination characteristics are set on the image plane (or the exposure field) of the projection system 6 using the illumination characteristic measurement sensor IS provided at one end of the substrate stage WS. Although an example of measurement has been described, an illumination characteristic measurement sensor IS is provided at one end of the mask stage MS, and a two-dimensional image in the illumination area IF of the illumination system (1 to 4) is provided using the illumination characteristic measurement sensor IS. It may be possible to measure various lighting characteristics. In this measurement, the illumination characteristic measurement mask can be dispensed with.

Next, FIG. 8, FIG. 9, FIG. 10, and FIG.
A second embodiment according to the present invention will be described with reference to FIG. In the above-described first embodiment, an example in which the multiple light source forming optical system (optical integrator) is configured by only one reflective element group 2 has been described. However, in the second embodiment, the multiple light source forming optical system (optical integrator) is described. An example in which an optical integrator (optical integrator) is composed of two reflective element groups (20a, 20b) is shown.

FIG. 8 is a diagram showing a schematic configuration of a second embodiment according to the present invention, and FIG. 9 is a diagram showing two reflective element groups (20a, 20b) as a multi-light source forming optical system (optical integrator). It is a front view which shows a structure. FIG.
Is a diagram showing a configuration of each reflecting element E ₁ constituting the first reflective element group 20a, 11 and the second reflecting element group 20b
Is a diagram showing a configuration of each reflecting element E ₂ which constitutes the. FIG.
Reference numeral 2 denotes two reflecting element groups (20a, 20a) as the multiple light source forming optical system (optical integrator) shown in FIG.
It is a figure which shows the effect | action of b).

As shown in FIG. 8, an X-ray radiator 1 as a light source means supplies a laser plasma X-ray source which emits X-rays having a wavelength of 10 nm to 15 nm, and supplies radiation light having a wavelength of 10 nm to 15 nm. Synchrotron generator. Radiation light (X-rays) supplied from the X-ray radiation device 1 is radiated toward a multiple light source forming optical system (optical integrator) 2.

Here, the multiple light source forming optical system (optical integrator) 2 includes a first reflecting element group 20a and a second reflecting element group 20a.
And the reflection element group 20b. First, the first reflection element group 20a will be described. The first reflective element group 20a is constituted by densely arranged large number of first reflective element (optical element) E ₁ is two-dimensionally along a vertical predetermined reference plane P _a to the YZ plane . Specifically, as shown in FIG. 9A, the first reflecting element group 20a has a large number of reflecting elements E1 _each having a reflecting curved surface whose contour (outer shape) is formed in an arc shape. . The first reflective element group 20a has five rows of the first reflective elements arranged in a large number along the Z direction along the Y direction. The five rows of the first reflective elements are configured to be substantially circular as a whole.

The contour shape (arc shape) of the reflection element E
Is similar to the shape of an arc-shaped illumination region IF formed on a reflection mask 5 as a surface to be described later. As shown in FIGS. 10A and 10B, each reflecting element E ₁
In a predetermined area decentered from the optical axis Ax _{E1, a} part of a reflection curved surface having a predetermined curvature radius R _E1 is cut out so that the contour (outer shape) becomes an arc shape. The center C _{E1 of} E ₁ is located at a height h _E from the optical axis Ax _E1 . Accordingly, as shown in FIG. 10B, the eccentric reflecting surface of each reflecting element E ₁ has a predetermined radius of curvature R _E1.
And an eccentric spherical mirror having

Therefore, as shown in FIG.
Shooting element E₁Optical axis Ax_E1From a predetermined diagonal direction
The emitted radiation (X-rays) L₁Focal position F
_E1And a plane P perpendicular to_FO(Optical axis Ax_E1At a distance from the
Thus, a light source image I is formed. At this time, the reflection element E
₁Focal length f_E1Is a reflective element E₁Vertex O of the reflection surface of
_E1And reflective element E₁Distance between the focal position FE1 of the reflection surface of
The reflection element E ₁Radius of curvature R of the reflection surface of_E1Toss
Then, the following equation (3) holds. (3) f_E1= -R_E1Returning to FIG. 8, explaining the first reflection element group 20a,
Synchrotron radiation (X-rays) obliquely incident from a certain direction
Element E₁Is split into arcs by the reflection of
Position P shifted from incident light beam_b(The second reflection element group 20b
A large number of reflecting elements E
₁Light source images I corresponding to the number of light source images are formed. In other words,
Many reflective elements E1 constituting the first reflective element group 20a
Each optical axis Ax_E1Radiation L enters from an oblique direction
It is assumed that each reflection element E₁Due to the reflection and collection of light
Each optical axis Ax_EFocus position F existing above_E1Plane P passing through
_bLight source images I are respectively formed. Many light source images I
Surface P to be formed_b(P in FIG. 10_Fo) In effect, many
A number of secondary light sources are formed.

[0087] The number of surface P _b of the light source images I are formed, as shown in FIG. 9 (b), the second reflective element group 20b are disposed. Here, in the radiation light supplied from the radiation light source device 1, in addition to a parallel light beam, a light beam having a divergence angle in a certain range is emitted. Therefore, the surface P _b by the first reflecting element group 20a, the light source image I having a certain size
Is formed. Therefore, the second reflection element group 20b
Functions as a group of field mirrors in order to effectively use the radiation light supplied from the radiation light source device 1. That is, the number of second reflective element E ₂ which constitute the second reflective element group 20b are respectively functions as a field mirror.

[0088] To describe the structure of the second reflective element group 20b, the second reflecting element group 20b, a second reference plane of a predetermined perpendicular to the YZ plane (plane P _b a large number of light source images I are formed) Along with a number of second reflecting elements (optical elements) E ₂
Are arranged two-dimensionally and densely. Specifically, as shown in FIG. 9B, the second reflection element group 2
0b has a number of reflective elements E ₂ having a reflecting curved surface contour (outline) is formed in a rectangular shape. The second reflective element group 20b has five rows of the second reflective elements arranged in a large number along the Z direction along the Y direction. The five rows of the second reflective elements are configured to be substantially circular as a whole.

That is, the large number of second reflecting elements E ₂ constituting the second reflecting element group 20 b are
Are arranged respectively so as to face each other becomes a number of the first reflective element E which constitute the 0a ₁ and 1-to-1. Here, as shown in FIGS. 11A and 11B, each reflecting element E ₂ forms a part of a reflecting curved surface having a predetermined radius of curvature R _E2 in a predetermined area including the optical axis Ax _E2 by contouring. (outline) is has a shape cut out so that a rectangular shape, the center C _E2 of the rectangular reflective element E ₂ is coincident with the optical axis Ax _E2 of the reflective element E _2. Therefore, the reflective surface of each reflective element E _2, as shown in (a) and (b) of FIG. 11, composed of concentric spherical mirror having a predetermined radius of curvature R _E2.

The two reflecting element groups, the first and second reflecting element groups, form a light source image forming optical system for forming a large number of light source images I, that is, a multiple light source forming for forming a large number of secondary light sources. A function is obtained as an optical system. Second reflective element group 2
The light fluxes from the multiple light source images I reflected by Oa
Incident on the condenser reflector 3 having an optical axis Ax _c as the condenser optical system. This condenser reflector 3
Is composed of a single eccentric spherical mirror decentered with respect to the optical axis AxC. This eccentric spherical mirror has a predetermined radius of curvature R.
has _c . Focal point of the condenser reflector 3 is consistent secondary light source plane P ₂ and the plurality of light source images I are formed by the second optical element group 20a, the center of curvature O _c of the condenser reflector 3, in the center position (the plane P ₂ of the optical axis Ax _c and the light source image I is formed is intersection) or the center of the optical element group 2 of a number of light source images I formed on the second reflective element group I do.

The optical axis Ax _c of the condenser reflecting mirror 3
It is parallel with a number of respective optical axes Ax _E1 of the optical element E ₁ constituting the first optical element group 20a, a number of the optical axis of the optical element E ₂ which constitutes the second optical element group 20b Not parallel to Ax _E2 . That is, each optical axis Ax _E2 of multiple optical element E ₂ which constitutes the second optical element group 20b is inclined by half of the angle of incidence of light rays as from light flux obliquely incident is as if normal incidence.

The light beams from the multiple light source images I reflected by the second reflecting element group 20a are reflected and condensed by the condenser reflecting mirror 3, respectively, and then passed through the plane mirror 4 as a deflecting mirror. The reflective mask 5 as an irradiation surface is illuminated in an arc shape in a superimposed manner. FIG. 4 is the arrow A in FIG.
, That is, an arc-shaped illumination region I formed on the reflective mask 5 when viewed from the back surface of the reflective mask 5.
Shows the state of F, the center of curvature O _IF of the arcuate illumination field IF is present on the optical axis Ax _P of the projection system shown in FIG.
If the plane mirror 4 in FIG. 8 is removed, the irradiation area IF is formed at the position of the irradiation surface IP in FIG. 8, and the curvature center O _IF of the illumination area IF at this time is changed to the condenser optical system 3. present in on the optical axis Ax _C.

Therefore, in the example shown in FIG.
Optical axis Ax of optical system 3_CIs deflected by 90 ° by the plane mirror 4.
Although not oriented, the virtual mirror 4 shown in FIG.
The optical axis Ax of the condenser optical system 3 at the launch surface 4a_C90
°, the optical axis Ax of the condenser optical system 3_CWhen
Optical axis Ax of projection system 6_PMeans that the reflection mask 5 is coaxial
Become. Therefore, these optical axes (Ax_C, Ax_P) Is light
It can be said that they are coaxial. Therefore, each optical axis (Ax_C,
Ax_P) Is the center of curvature O of the arc-shaped illumination area IF. _IFThe optical
The condenser optical system 3 and the projection system 6 are
Is placed.

On the surface of the reflective mask 5, a predetermined circuit pattern is formed.
Are held on a mask stage MS that can move two-dimensionally along the XY plane. The light reflected by the reflective mask 5 is imaged via a projection system 6 on a wafer 7 coated with a resist as a photosensitive substrate, and a pattern image of the arc-shaped reflective mask 5 is projected thereon. Transcribed. The wafer 7 is held on a substrate stage WS that can move two-dimensionally along the XY plane.

Here, the mask stage MS moves two-dimensionally along the XY plane via the first drive system D ₁ , and the substrate stage WS moves along the XY plane via the second drive system D _2. Move two-dimensionally. These two drive systems (D ₁ ,
In D ₂ ), each drive amount is controlled by the control system 8. Therefore, the control system 8 has two drive systems (D ₁ , D ₂ )
By moving the mask stage MS and the substrate stage WS in directions opposite to each other (in the direction of the arrow) via
The entire pattern formed on the reflective mask 5 is scanned and exposed on the wafer 7 via the projection system 6. Thereby, a good circuit pattern in the photolithography process for manufacturing a semiconductor device is transferred onto the wafer 7, so that a good semiconductor device can be manufactured.

[0096] a projection system 6 having an optical axis Ax _P, as described in the first embodiment, four aspherical mirror having an effective reflecting surface at a position away from the optical axis Ax _C (. 6a to 6
It is composed of a male-axis type reduction system having d). First, third and fourth aspheric mirrors (6a, 6c,
6d) is configured by a concave aspherical mirror, and the second aspherical mirror 6b is configured by a convex aspherical mirror. Pupil of the projection system 6 is present on the reflective surface of the third aspherical mirror 6c, the aperture stop, and the like is provided at a position P _S of the pupil.

Next, the operation of the first and second reflecting element groups (20a, 20b) of the example shown in FIG. 8 will be described with reference to FIG.
This will be described with reference to FIG. FIG. 12 is an enlarged view of a portion of the illumination device that illuminates the reflection mask 5 shown in FIG. 8. In FIG. 12, the plane mirror 4 is omitted for easy understanding of description. First reflective element group 2
0a is composed of two reflecting elements (E _a1 , E _b1 )
It is assumed that the reflecting element group 20b of FIG. 2 includes two reflecting elements (E _a2 , E _b2 ).

The first reflection element group 20a includes two first reflection elements (E _a1 , E _b1 ) arranged along a predetermined first reference plane P1, and the predetermined reference plane P _a Is located at a position optically conjugate with the reflection mask 5 as the surface to be irradiated, or near the conjugate position. The second reflecting element group 20b includes two first reflecting elements (E _a2 , E _b2 ) arranged along a predetermined second reference plane P _b , and the predetermined reference plane P _b Is located at a position optically conjugate with the pupil of the projection system 6 or near the conjugate position.

As shown in FIG. 12, the first reflecting element group 20
The radiation light (X-ray) indicated by a solid line incident on the reflection element E _a1 in a from a certain direction is wavefront-divided into an arc-shaped light flux corresponding to the contour shape of the reflection surface of the reflection element E _a1. wavefront divided arc-shaped light beam (light flux shown by the solid line), the second reflective element group by the focusing action of the reflective surface of the reflective element E _a1 2
Forming a light source image I ₁ at one end of the reflective element E _a2 in 0b.

[0100] Furthermore, radiation indicated by dotted lines coming from different directions to the reflective element E _a1 in the first reflective element group 20a (X-ray)
Is wavefront-divided into an arc-shaped light flux so as to correspond to the contour shape of the reflection surface of the reflection element _Ea1 , and the wavefront-divided arc-shaped light flux (light flux indicated by the dotted line) is reflected by the reflection element _Ea1 . the other end of the reflective element E _a2 in the second reflective element group 20b by the condensing action of the surface to form a light source image I _2.

[0102] Thus, the radiation angle range shown by the solid line and dotted line in the reflective element E _a1 in the first reflective element group 20a is incident on the reflective element E _a2 in the second reflective element group 20b is the light source image I1 And a light source image having a size connecting the light source image I2 and the light source image I2. Then, these two light source images (I ₁ ,
The light flux from I ₂ ) is condensed by the reflection and condensing action of the reflecting element E _a2 in the second reflecting element group 20b (the action of the field mirror), and further, is reflected and condensed by the reflecting surface of the condenser optical system 3. And illuminated in an arc so as to overlap the reflective mask 5 from two directions. FIG.
2 is the width direction of the arc-shaped illumination area formed on the reflective mask 5.

The reflection elements in the first reflection element group 20a
E_b1And the reflection element E in the second reflection element group 20b_b2by
The optical action is the same as that of the reflection element in the first reflection element group 20a.
Child E _a1And the reflection element E in the second reflection element group 20b_a2By
The description is omitted because it is the same as the optical action described above. like this
Formed by two reflective element groups (20a, 20b)
Of light from a large number of light source images formed on the reflective mask 5 in an arc
Lighting is superimposed in a shape, achieving efficient and uniform lighting
it can. In addition, each reflection element in the second reflection element group 20b
Due to the action of E (the action of the field mirror), the size
Light from a light source image with
To make the size of the condenser optical system 3 compact
be able to.

By the way, in the second embodiment shown in FIG. 8, the reflection mask 5 or the photosensitive substrate 7 as an object to be irradiated is used.
An adjustment mechanism for improving the illumination characteristics (illumination distribution, telecentricity, etc.) in the above will be described. It is assumed that a light beam having a normal distribution (Gaussian distribution) intensity distribution is supplied from the light source unit 1 shown in FIG.

First, the illumination characteristic measuring sensor IS provided at one end of the substrate stage WS is connected to the measured projection system 6.
Illuminating characteristic information within the image forming plane (or the exposure visual field) is detected. Thereafter, the control system 8 controls the illumination characteristic measuring sensor IS.
Based on the result of the measurement, it is determined whether or not the current illumination characteristic is acceptable, after performing a predetermined calculation. If the measured illumination characteristics are not acceptable, the control system 8, based on the measurement results, in terms of calculating the correction amount of the illumination characteristics, the first adjusting system (drive system) AD ₁ ~ 4 adjustment system by driving at least one of (drive system) AD _4, for example, performs the correction and telecentricity correction in the illuminance distribution.

Here, the first adjustment system AD ₁ outputs a predetermined third axis Ax ₃ parallel to the Y axis based on the output from the control system 8.
The light source unit 1 is inclined by a predetermined amount about the center of the light source as shown in the arrow direction T3. Thus, a rotationally symmetric illuminance distribution I along the Y direction in an arc-shaped illumination area (exposure area or exposure field of the projection system 6) IF formed on the substrate 7 is obtained.
D _b2 is corrected, and the illuminance distribution ID _b2 becomes flat (FIG. 23).
(B)).

The second adjustment system AD_TwoFrom the control system 8
Based on the output of the third axis Ax _Three4th axis orthogonal to
Ax_Four(The axis parallel to the Z axis) in the arrow direction T4
The light source means 1 is inclined by a predetermined amount as shown in FIG. this
, An arc-shaped illumination area (exposure area) formed on the substrate 7
Area or the exposure field of the projection system 6) along the Y direction in the IF.
Illuminance distribution ID with an inclined component_c2Is corrected and the illumination
Cloth ID_c2Becomes flat (see FIG. 23C).

Further, based on the output from the control system 8, the third adjustment system AD ₃ causes the two reflecting element groups (20a, 20b) as the reflection type optical integrator 2 to illuminate the luminous flux center illumination optical axis Ax _c (X Axis (YZ plane)
Is moved (eccentric) integrally by a predetermined amount along. Thereby, the inclination component (inclination telecentricity) of the telecentricity is corrected (see FIG. 24B).

[0108] The direction fourth adjusting system AD _4, based on the output from the control system 8, along the two reflective element group as a reflection type optical integrator 2 (20a, 20b) to the illumination optical axis Ax _c In the (X direction), they are integrally moved by a predetermined amount. As a result, a change in telecentricity (magnification telecentricity) that isotropically occurs according to the position from the optical axis is corrected (see FIG. 24C).

If the third axis Ax ₃ and the fourth axis Ax ₄ shown in FIG. 8 satisfy a relationship orthogonal to each other, the third axis Ax ₃ is located at an arbitrary position parallel to the Y axis. 4-axis A
x ₄ can be set to the setting at any position parallel to the X axis.

As described above, the first adjustment system (drive system) AD
By _first to fourth adjustment system (driving system) is driven at least one of the AD _4, the illumination characteristics of the arc-shaped exposure field to be formed on the substrate (exposure region) can be satisfactorily corrected.

The above-described adjustment operation of the illumination characteristics is the same as the above-described adjustment flow of FIG. 25, and thus the description is omitted. However, the control system 8 shown in FIG. 8 includes four adjustment systems (AD _{1 to} A _1).
D ₄ ) without controlling these four adjustment systems (AD
_{1 to} AD ₄ ) may be a mechanical or electrical adjustment mechanism that can be adjusted by an operator. In this case, the worker corrects the illuminance distribution and the telecentricity via _four adjustment systems (AD _{1 to} AD ₄ ) based on the measurement result by the illumination characteristic measurement sensor IS (illumination characteristic measurement device). be able to.

FIG. 8 illustrates an example in which the illumination characteristics are measured on the image formation plane (or the exposure field) of the projection system 6 using the illumination characteristic measurement sensor IS provided at one end of the substrate stage WS. However, an illumination characteristic measurement sensor IS is provided at one end of the mask stage MS, and two-dimensional illumination characteristics in the illumination area IF of the illumination system (1 to 4) are measured using the illumination characteristic measurement sensor IS. You may do it. In this measurement, the illumination characteristic measurement mask can be dispensed with.

In the embodiment shown in FIG. 8, the light source image formed on the surface of each reflecting element in the second reflecting element group 20b is positioned at the pupil position P _{S of the} projecting system 6 (incident light of the projecting system 6). The so-called Koehler illumination is achieved because it is re-imaged on the pupil). As shown in the above second embodiment, for example, using light such as X-rays having a wavelength of 100 nm or less and having a certain divergence angle,
In order to expose the mask pattern to the photosensitive substrate 7, even if all of the illuminating device and the projection system are composed of reflective members and reflective elements, the illuminance on the mask is maintained while substantially maintaining Koehler illumination conditions. A uniform arc-shaped illumination region can be efficiently formed.

In the second embodiment shown in FIG.
Constituting the first and second reflection element groups (20a, 20b)
Reflective elements (E₁, E_Two) And condenser optics
The condensing condenser mirror 3 has a spherical shape with eccentricity.
In the above examples, the reflective surfaces are used.
Needless to say, it can be done. In addition, the second shown in FIG.
In the embodiment, the optical axis Ax of the condenser optical system 3_C
And the optical axis Ax of the projection system 6 _PAre orthogonal to each other.
The example in which the condenser optical system 3 and the projection system 6 are arranged is shown.
However, as shown in FIG. 13, the deflection mirror (plane mirror) 4
By changing the position of the
Optical axis Ax of the sensor optical system 3_CAnd the optical axis Ax of the projection system 6_PWhen
Are concentric with each other so that the condenser optical system 3 and the projection system 6
And may be arranged.

Next, a modification of the second embodiment shown in FIG. 8 will be described with reference to FIGS. In this example, in order to further improve the illumination efficiency in the first and second reflective element groups (20a, 20b) shown in FIGS. 9A and 9B, the first reflective element group shown in FIG. 14 and 15 show the second reflection element group (20a, 20b).
The configuration shown in FIG.

First, the structure of the first reflection element group 20a will be described. As shown in FIG. 14A, the first reflection element group 20a has a large number of first reflection element groups 20a having an arc-shaped contour (outer shape). There are three rows of second reflective elements in which one reflective element is arranged in a large number along the Z direction, along the Y direction. The first row G _E11 of reflective elements has a number of reflective elements (E _{11 a}
To E _11v ). The first column of reflection elements G _E11 is formed around the axis A ₁ that is transverse to the center of the first row of reflection elements (the center of each reflection element) and parallel to the Z axis. Arbitrary reflecting elements constituting the array of reflecting elements _GE11 are arranged in a state rotated by a predetermined amount.

The second array G _E12 of reflective elements is composed of a large number of reflective elements (E _{12a to} E _12y ). The second reflective element row G _E12 crosses the center of the second reflective element row (the center of each reflective element) and Z Z
A _second row G of reflective elements, centered on an axis A ₂ parallel to the axis;
Arbitrary reflecting elements constituting _E12 are arranged in a state rotated by a predetermined amount.

Further, the third array G _E13 of reflecting elements is composed of a number of reflecting elements (E _{13a to} E _13v ).
The third reflection element row G _E13 is formed around the axis A ₃ that passes through the center of the third reflection element row (the center of each reflection element) and is parallel to the Z axis. Arbitrary reflecting elements constituting the array of reflecting elements _GE13 are arranged in a state rotated by a predetermined amount.

Next, the structure of the second reflecting element group 20a will be described. As shown in FIG. 14B, the second reflecting element group 20b has a large number of substantially square outlines (outer shapes). the second reflective element E ₂ has 9 rows of columns of a number array of reflective elements along the Y-direction along the Z direction. The second reflective element group 20b includes a first partial group G _{E21 including} three reflective element rows from a first row to a third row in order from the lower row in FIG. 14B. , Column 4 ~
A second partial group G including three reflective element rows up to a sixth row
_E22 and a third partial group G _E23 composed of three reflective element rows from a seventh row to a ninth row.

[0120] Here, each reflective element surface E ₂ constituting the first subgroup G _E21, the first reflective element group described above 20
a of each of the first reflection element rows G _E11 in FIG.
_{11a to E11v} ), the light source images condensed are formed respectively. In addition, each reflective element E ₂ of the surface constituting the second subgroup G _E22, each of the reflective elements (E _12a ~ of the second reflective element rows G _E12 in the first reflective element group 20a previously described
Light source images condensed by E _12y ) are formed.

Further, the third subgroup G_E23Make up each
Reflective element E_TwoOn the surface of the first reflection element group 20 described above.
a third reflective element row G in FIG._E13Each reflection element (E
_13a~ E_13v), The light source images collected by
Is done. Specifically, as shown in FIG.
Reflective element row G_E11Each reflecting element (E_11a~ E
_11k) Is the center of the first reflective element row (for each reflective element)
Center C_1a~ C_1k) And an axis A parallel to the Z axis₁Around
The first column G of the reflective element_E11Make up any anti
Are arranged in a state where the projecting elements are rotated by a predetermined amount.
ing.

[0122] For example, the reflective element E _11a a predetermined amount about the axis A ₁ to the right (counterclockwise) are fixedly provided while rotated (small amount), the reflective element E _11a is first 1
In the third column of the uppermost on the reflective element E ₂ subgroups G _E21, to form a circular light source image I _a having a certain size. The reflecting element E _11f is fixedly mounted in a state where the reflecting element E _11f is rotated counterclockwise (clockwise) by a predetermined amount (a minute amount) about the axis A _1. G
In a second on the reflective element E ₂ from the top of the first column of the _E21, to form a circular light source image I _f having a certain size.

Further, the reflecting element E _11k is fixed without being rotated about the axis A ₁ , and the reflecting element E _11k is located above the second column of the first partial group GE ₂₁ . in the fourth on the reflective element E ₂ from to form a circular light source image I _f having a certain size. At this time, the optical axis of the reflective element _{E11k and} the optical axes of the reflective elements constituting the first subgroup _GE21 are parallel to each other.

The configuration shown in FIG. 15 is provided between the second reflective element group G _E12 and the second partial group G _E22 in the first reflective element group 20a and the first reflective element group. The same applies between the third reflective element row _{GE13 in} 20a and the second partial group _GE23 . As described above, according to the configuration of the first and second reflective elements (20a, 20b) shown in FIGS. 14 and 15, the first and second reflective elements (20a) shown in FIG.
Compared with the configurations of a and 20b), the light source image having a large size is less likely to be shielded by the contour (outer shape) of the second reflective element, so that the illumination efficiency can be improved.

In the first and second embodiments, the reflecting elements (E, E, E) having an arc-shaped contour (outer shape) in the first reflecting element group constituting at least a part of the multiple light source forming means.
₁ ) is constituted by an eccentric mirror decentered with respect to the optical axis (Ax _E , Ax _E1 ) of the element, so that aberration correction is performed only in an arc region at a certain image height (a certain height from the optical axis). Therefore, the constraints on the optical design are greatly eased as compared with the case of designing a non-eccentric reflective element. Thereby, the aberration generated in the reflecting elements in the first reflecting element group can be sufficiently suppressed. Therefore, there is an advantage that very good uniform arc illumination can be realized on the irradiated surface such as the mask 5.

Further, since the condenser optical system is also constituted by the decentered mirror system, the aberration generated in the condenser optical system can be sufficiently suppressed, so that the above advantages can be obtained synergistically. Although the condenser optical system can be constituted by one eccentric mirror, it can also be constituted by a plurality of eccentric mirrors. If at least one of the first reflecting element group and the second reflecting element group shown in the first and second embodiments is configured to be inclined by a minute amount, the surface to be irradiated can be reduced. It is possible to adjust the illuminance distribution and the like in the arc-shaped illumination region formed in the above. Further, at least one eccentric mirror constituting the condenser optical system is configured to move or incline by a small amount in a predetermined direction (the optical axis of the condenser optical system or a direction orthogonal to the optical axis) or to be inclined. The illuminance distribution or the like in the illumination area may be adjusted.

In order to make the apparatus compact while maintaining a good illumination area, the first reflecting element group 20a and the condenser optical system 3 in the second embodiment also satisfy the above-mentioned conditional expression (2). Needless to say, it is desirable to satisfy the relationship. Further, in each of the above embodiments, the first optical element and the second optical element constituting the multiple light source forming optical system have been described as examples in which each of the first optical element and the second optical element is constituted by a reflection mirror. May be configured. In this case, it is needless to say that the cross-sectional shape of the lens element constituting the first optical element is preferably an arc. In FIGS. 9 and 14 described above, the first optical element group 20a and the second optical element group 2 in which a large number of reflecting elements (E ₁ , E ₂ ) are densely arranged without any gap.
0b is shown. However, in the second optical element group shown in FIGS. 9 (b) and 14 (b), it is not necessary to arrange a large number of reflecting elements E2 densely without any gap. Describing The reason, as described above, the or near the second optical element group 20b, a number of light source images corresponding to the respective reflecting element E ₂ is formed. As long as these light source images is within the effective reflective area of the reflective elements E _2, it does not cause light loss. Therefore, when a large number of light source images are discretely formed on or near the second optical element group 20b with a gap, a large number of reflective elements E in the second optical element group are provided.
₂ can be arranged discretely with a gap.

Also, FIG. 1, FIG. 2, FIG. 8, FIG. 9, FIG.
The reflection type optical integrator shown in FIGS. 14 and 15 forms a secondary light source having a predetermined shape and size or has a function of uniformly illuminating an irradiation target (mask 5 and substrate 7). Although the configuration includes at least one or more reflective element groups (2, 20a, 20b), a reflective diffractive optical element may be used instead of the reflective element group. In this case, the reflection type optical integrator can be constituted by at least one or more reflection type diffractive optical elements. Incidentally, the fact that the reflection type optical integrator can be constituted by at least one or more reflection type diffractive optical elements is the same in the embodiments shown in FIGS. 16 to 22 described below.

FIG. 16 shows the first example shown in FIG.
13 shows a modification of the projection exposure apparatus which performs the exposure operation by the step-and-scan method according to the embodiment. The projection exposure apparatus shown in FIG. 16 uses light (EUV light) in the soft X-ray region of about 5 nm to 20 nm, and
The exposure operation is performed by the AND scan method. In FIG. 16, the members having the same functions shown in FIG. 1 are denoted by the same reference numerals. In FIG. 16, the optical axis direction of the projection system that forms the reduced image of the mask 5 on the wafer 7 is defined as the Z direction, the direction in the plane of the drawing perpendicular to the Z direction is defined as the Y direction, and the direction orthogonal to the YZ directions is defined. The direction perpendicular to the paper surface is defined as the X direction. FIG. 16 and FIG.
7 and FIGS. 19 to 21, as shown in FIGS. 1 and 8, a driving device (D ₁ , D ₁ ) that relatively moves the mask stage MS and the substrate stage WS with respect to the projection system 6. D ₂ ) is provided, as shown in FIGS.
In FIG. 21, a mask stage MS and a driving device (D
₁ and D ₂ ) are omitted from the drawing.

Now, as shown in FIG. 16, the exposure apparatus
While projecting an image of a part of the circuit pattern drawn on the reflective mask 5 as a projection original (mask) onto a wafer 7 as a substrate via a projection system 6, the mask 5 and the wafer 7 are projected onto a projection optical system. The entire circuit pattern of the mask 5 is transferred to each of a plurality of shot areas on the wafer 7 by a step-and-scan method by performing relative scanning in a one-dimensional direction (Y direction) with respect to the mask 9.

Here, as shown in FIG. 16, soft X-rays, which are illumination light for exposure, have low transmittance to the atmosphere.
The optical path through which the EUV light passes is covered by the vacuum chamber 100 and is shielded from outside air. The laser light source 10
It has a function of supplying laser light having a wavelength in the infrared to visible ranges. For example, a YAG laser or an excimer laser excited by a semiconductor laser can be used. This laser light is condensed by the condensing optical member 11 and condensed on the position 13. The nozzle 12 ejects a gaseous object toward the light condensing position 13, and the ejected object receives a high illuminance laser beam at the position 3. At this time, the ejected object becomes hot due to the energy of the laser light, is excited into a plasma state, and emits EUV light when transitioning to a low potential state.

An elliptical mirror 14 is arranged around the position 3, and the elliptical mirror 14 is positioned so that its first focal point substantially coincides with the light condensing position 13.
The inner surface of the elliptical mirror 14 is provided with a multilayer film for reflecting EUV light, and the EUV light reflected here is
After being converged once at the second focal point of the elliptical mirror 14, the light goes to a parabolic mirror (collimator reflecting mirror) 15. This reflecting mirror 15
The focal point is positioned so as to substantially coincide with the second focal position of the elliptical mirror 14, and a multilayer film for reflecting EUV light is provided on the inner surface thereof.

The EUV light emitted from the parabolic mirror 15 is
In a substantially collimated state, the light travels to the reflection type fly-eye optical system 2 as an optical integrator. In addition,
The condensing optical member 11, the elliptical mirror 14, and the parabolic mirror 15 constitute a condensing optical system. The reflection type fly-eye optical system 2, a plurality of reflection of the plurality of reflecting surfaces and a first reflective element group 20a formed by integration (s reflective surface of the reflective element E ₁₎ of the first reflective element group 20a It is composed of a second reflective element group 20b having a surface with a plurality of reflecting surface corresponding (reflecting surfaces of the plurality of reflective elements E _2). These first and second
A multilayer film for reflecting EUV light is also provided on a plurality of reflection surfaces constituting the reflection element groups 20a and 20b.

Here, the numerical aperture (illumination system) of the luminous flux illuminating the reflective mask 5 is provided at or near the reflective surface position of the second reflective element group 120b constituting the reflective fly-eye optical system 2. Is provided with a first variable aperture stop AS1 for making the numerical aperture (variable numerical aperture) variable. The first variable aperture stop AS1 has a substantially circular variable aperture, and the aperture diameter of the aperture of the first variable aperture stop AS1 is variable by the first drive system DR1. I have.

The collimated EUV light from the parabolic mirror 15 is wavefront-divided by the first reflecting element group 20a, and the EUV light from each reflecting surface is condensed to form a plurality of light source images. Is done. A plurality of reflecting surfaces of the second reflecting element group 20b are positioned near the positions where the plurality of light source images are formed, and the plurality of reflecting surfaces of the second reflecting element group 20b are: It functions essentially as a field mirror. As described above, the reflection type fly-eye optical system 2 is based on the substantially parallel light beam from the parabolic mirror 15,
A large number of light source images are formed as secondary light sources.

The EUV light from the secondary light source formed by the reflection type fly-eye optical system 2 travels to the condenser mirror 3 positioned such that the focal position is near the position of the secondary light source. After being reflected and condensed by the mirror 3, the light reaches the reflective mask 5 via the optical path bending mirror 4. A multilayer film that reflects EUV light is provided on the surfaces of the condenser mirror 3 and the optical path bending mirror. And condenser mirror 3
Collects EUV light emitted from the secondary light source and uniformly illuminates a predetermined illumination area on the reflective mask 5 in a superimposed manner.

A pattern of a multilayer film that reflects EUV light is provided on the reflective mask 5. The EUV light reflected from the reflective mask 5 is imaged by the projection system 6 to form an image. The image of the reflective mask 5 is transferred onto a wafer 7 as a photosensitive substrate. In the present embodiment, since the optical path separation between the illumination light traveling toward the reflective mask 5 and the EUV light reflected by the reflective mask 5 and traveling toward the projection system 6 is performed spatially, the illumination system is not operated. It is a telecentric system, and the projection system 6 is also a non-telecentric optical system on the mask side.

The structure of the projection system 6 is the same as that of the projection system 6 shown in FIG.
6, four mirrors (6a to 6a) constituting the projection system 6 shown in FIG.
A multilayer film that reflects EUV light is provided on the surface of d). By the way, a mirror 6c is arranged at or near the pupil position of the projection system 6 in FIG. 17, and the numerical aperture of the projection system 6 is variable on the reflection surface of the mirror 6c or in the vicinity thereof. Two variable aperture stops are provided. The second variable aperture stop AS2 has a substantially circular variable aperture, and the aperture diameter of the aperture of the second variable aperture stop AS2 is variable by the second drive system DR2. I have.

Here, the case where the ratio (coherence factor or σ value) between the numerical aperture of the illumination system and the numerical aperture of the projection system 6 is made variable will be described. The σ value is defined as σ = NA1 / NA2, where NA1 is the numerical aperture of the illumination system and NA2 is the numerical aperture of the projection system 6. Depending on the fineness of the pattern to be transferred to the wafer 7 and the process of the pattern to be transferred to the wafer 7, the ratio between the numerical aperture of the illumination system and the numerical aperture of the projection system 6 can be changed to change the resolution of the projection system 6 and the depth of focus. Needs to be adjusted. For this reason, exposure information (such as a wafer transfer map including exposure information) relating to exposure conditions for each wafer sequentially mounted on the wafer stage WS by a transfer device (not shown), and sequentially mounted on the mask stage MS. The placement information of various masks is input to a control device 8 as a control system via an input device IU such as a console. The control device 8 changes the ratio between the numerical aperture of the illumination system and the numerical aperture of the projection system 6 based on input information from the input device IU every time the wafer 7 is placed on the wafer stage WS. It is determined whether or not. If the control device 8
Determines that the ratio between the numerical aperture of the illumination system and the numerical aperture of the projection system 6 needs to be changed, the control device 8 drives at least one of the two drive systems (DR1, DR2) to , A first aperture stop AS1 and a second variable aperture stop AS2
And at least one of the aperture diameters is variable. Thereby, appropriate exposure can be achieved under various exposure conditions.

It is desirable that the reflecting mirror 15 be replaced with a reflecting mirror having a different focal length in accordance with the variable aperture diameter of the first aperture stop AS1. Thereby, the luminous flux diameter of the EUV light incident on the reflection type fly-eye optical system 2 can be changed according to the size of the opening of the first aperture stop AS1, and an appropriate σ can be maintained while maintaining high illumination efficiency. Illumination under the value is possible.

By the way, in the embodiment shown in FIG. 16, the adjustment mechanism for improving the illumination characteristics (illumination distribution, telecentricity, etc.) on the reflection mask 5 or the photosensitive substrate 7 as the object to be irradiated is described. explain.

First, the illumination characteristic measuring sensor IS provided at one end of the substrate stage WS is connected to the measured projection system 6.
Illuminating characteristic information within the image forming plane (or the exposure visual field) is detected. Thereafter, the control system 8 controls the illumination characteristic measuring sensor IS.
Based on the result of the measurement, it is determined whether or not the current illumination characteristic is acceptable, after performing a predetermined calculation. If the measured illumination characteristics are not acceptable, the control system 8, based on the measurement results, in terms of calculating the correction amount of the illumination characteristics, the first adjusting system (drive system) AD ₁ ~ 4 adjustment system by driving at least one of (drive system) AD _4, for example, performs the correction and telecentricity correction in the illuminance distribution.

Here, the first adjustment system AD ₁ is based on the output from the control system 8, with the fifth axis Ax ₅ parallel to the X-axis on the emission side of the parabolic mirror 15 as the center, in the direction of the arrow. The parabolic mirror 15 is tilted by a predetermined amount as shown at T5. Thus, the rotationally symmetric illuminance distribution ID _b2 along the Y direction in the arcuate illumination area IF (the exposure area or the exposure field of the projection system 6) formed on the substrate 7 is corrected, and the illuminance distribution ID
_b2 becomes flat (see FIG. _23B ).

The second adjustment system AD ₂ is configured to output the fifth axis Ax on the emission side of the parabolic mirror 15 based on the output from the control system 8.
About the sixth axis Ax ₆ perpendicular to the ₅ (Z-axis parallel to the axis), is inclined by a predetermined amount parabolic mirror 15 as shown in the arrow direction T6. Accordingly, the illuminance distribution I having an inclination component along the Y direction in the arc-shaped illumination area IF (the exposure area or the exposure field of the projection system 6) formed on the substrate 7
D _c2 is corrected, and the illuminance distribution ID _c2 becomes flat (FIG. 23).
(C)).

The third adjusting system AD ₃ controls the reflection type optical integrator 2 (20 a, 20 b) and the first aperture stop AS 1 based on the output from the control system 8 to the illumination optical axis Ax _c (X direction). Are moved (eccentric) integrally by a predetermined amount along a plane (XZ plane) orthogonal to. Thereby, the inclination component (inclination telecentricity) of the telecentricity is corrected (see FIG. 24B).

[0146] The fourth adjusting system AD _4, based on the output from the control system 8, the reflection type optical integrator 2 (20a, 20b) and the first direction and the aperture stop AS1 along the illumination optical axis Ax _c (In the Y direction), they are integrally moved by a predetermined amount. As a result, a change in telecentricity (magnification telecentricity) that isotropically occurs according to the position from the optical axis is corrected (see FIG. 24C).

The fifth axis Ax shown in FIG._FiveAnd the sixth
Axis Ax₆Satisfies the relationship orthogonal to each other,
Axis Ax_FiveIs at an arbitrary position parallel to the X axis, and the sixth axis
Ax ₆Are set to arbitrary positions parallel to the Z axis.
Can be set. The scanning direction in FIG.
DI₁23 corresponds to the Y direction in the example shown in FIG.
In non-scanning direction DI_Two(Scanning direction DI₁Orthogonal to
Direction) corresponds to the X direction in the example shown in FIG.

As described above, the first adjustment system (drive system) AD
By _first to fourth adjustment system (driving system) is driven at least one of the AD _4, the illumination characteristics of the arc-shaped exposure field to be formed on the substrate (exposure region) can be satisfactorily corrected.

It should be noted that the above-described operation of adjusting the illumination characteristics is described above.
The description is omitted because it is the same as the adjustment flow of FIG.
However, the control system 8 shown in FIG.₁~
AD _Four) Without controlling these four adjustment systems (A
D₁~ AD_Four) Can be adjusted by the operator mechanical or electric
It may be a simple adjustment mechanism. In this case, for lighting characteristic measurement
Based on the measurement result by sensor IS (lighting characteristic measuring device)
The operator has four adjustment systems (AD₁~ AD_FourThrough)
To correct illumination distribution and telecentricity
be able to.

FIG. 16 shows an example in which the illumination characteristics are measured on the image plane (or the exposure field) of the projection system 6 using the illumination characteristic measurement sensor IS provided at one end of the substrate stage WS. However, an illumination characteristic measurement sensor IS is provided at one end of the mask stage MS, and two-dimensional illumination characteristics in the illumination area IF of the illumination system (1 to 4) are measured using the illumination characteristic measurement sensor IS. You may do it. In this measurement, the illumination characteristic measurement mask can be dispensed with.

In the exposure apparatus shown in FIG. 16, if the illuminance distribution on the reflective mask 5 or the wafer 7 is non-uniform such that it is inclined, the reflective fly-eye optical system 2 It is also possible to correct the inclination of the light illuminance distribution by decentering the luminous flux such as EUV light incident on the reflective element group 20a so as to cross the reflective element group 20a. For example, by slightly decentering the parabolic mirror 15, the inclination of the light illuminance distribution can be corrected. That is, the reflection type mask 5
When the inclination of the light illuminance distribution is generated in the left-right direction (X direction) of the arc-shaped illumination area formed on the surface of the wafer or the wafer surface, the parabolic mirror 15 is moved in the X direction to obtain the light illuminance. The inclination of the distribution can be corrected.
If the illuminance differs between the central portion and the peripheral portion in the width direction (Z direction) of the arc-shaped illumination region formed on the surface of the reflective mask 5 or the wafer surface, the parabolic mirror 15 is moved to the Z direction. By moving in the direction, the inclination of the light illuminance distribution can be corrected.

By making at least one of the aperture diameters of the first aperture stop AS1 and the second variable aperture stop AS2 variable, an arc-shaped illumination area formed on the wafer 7 or the mask 5 can be formed. The illumination state may be deteriorated due to the occurrence of illumination unevenness or the like. At this time, it is desirable to slightly move at least one optical member of the parabolic mirror 15, the reflection type fly-eye optical system 2, and the condenser mirror 3 to correct the illumination unevenness in the arc-shaped illumination area. .

Next, referring to FIG. 17, FIG.
A first modification of the projection exposure apparatus shown in FIG. FIG.
7, members having the same functions as those shown in FIG. 16 are denoted by the same reference numerals. The first difference between the exposure apparatus shown in FIG. 16 and the exposure apparatus shown in FIG. 17 is that one of the second reflection element groups 20 constituting the reflection type fly-eye optical system 2 is formed.
b at the position of the reflecting surface or at a position near the reflecting surface.
18, a plurality of aperture stops (50a to 50a) having different shapes and sizes from each other as shown in FIG.
0f) is provided, and the turret plate 51 is provided so as to be rotatable about a predetermined rotation shaft 52 by the first drive system DR1.

The second difference from the exposure apparatus shown in FIG. 16 is that the parabolic mirror 15 and the reflective fly-eye optical system 2
In the optical path between the first reflective element group 20a and the first reflective element group 20a, an annular light beam conversion unit that converts EUV light having a circular light beam cross section into EUV light having an annular light beam cross section (ring shape) Reference numeral 60 denotes a point provided so as to be insertable into and removable from the illumination optical path.

The annular light beam conversion unit 60 has a first reflecting member 60a having a ring-shaped reflecting surface and a second reflecting member 60b having a conical reflecting surface. A ring-shaped (ring-shaped) EU incident on the reflective fly-eye optical system 2
In order to make the ratio of the inner diameter of the orbicular zone to the outer diameter of the orbicular zone in V light (so-called annular zone ratio) variable, the first reflecting member 60a and the second
The reflection member 60b is provided so as to be relatively movable along the illumination light path.

The insertion and removal of the annular light beam conversion unit 60 with respect to the illumination light path and the first reflection member 60 along the illumination light path
a and the second reflection member 60b move relative to the third drive system D
This is performed by R3. Here, the turret plate 51 and the annular light beam conversion unit 60 will be described in detail with reference to FIGS.

Turret plate 51 having a plurality of aperture stops
Is rotatably provided about a predetermined shaft 52 as shown in FIG. As shown, the turret plate 51
An aperture stop 50a having a different aperture shape is provided on the top.
To 50f are provided. Here, the aperture stop 50a
Is an aperture stop having a ring-shaped (donut-shaped) aperture, and the aperture stop 50b and the aperture stop 50e are each an aperture stop having a circular aperture having a different aperture diameter. The aperture stop 50c is an aperture stop having four fan-shaped openings, and the aperture stop 50d is an aperture stop having four circular openings. And the aperture stop 5
Reference numeral 0f denotes an aperture stop having an annular ratio different from the aperture stop 50a (the ratio between the outer diameter and the inner diameter of the annular opening).

In FIG. 17, an input device IU is for inputting information necessary for selecting an illumination method on the mask 5 and the wafer 7. For example, input device IU
In accordance with the fineness of the pattern to be transferred to the wafer 7 and the process of the pattern to be transferred to the wafer 7, the exposure information (the wafer including the exposure information) on the exposure conditions for each wafer sequentially placed by the transfer device (not shown) Transport map, etc.),
And for inputting mounting information of various masks sequentially mounted on the mask stage MS.

In the example shown in FIG. 17, based on the input information from the input device IU, the control device 8 executes “the first annular illumination”, “the second annular illumination”, and “the first normal illumination”. , "Second normal illumination", "first special tilted illumination", and "second special tilted illumination" can be selected. here,
“Ring zone illumination” means that the secondary light source formed by the reflection type fly-eye optical system 2 is formed into a ring shape (donut shape) so that EUV light is oblique to the reflection type mask 6 and the wafer 7. The projection system 6 is illuminated from the direction, thereby improving the resolution and the depth of focus that the projection system 6 originally has. The “special oblique illumination” means that the secondary light source formed by the reflective fly-eye optical system 2 is a plurality of discrete eccentric light sources eccentric by a predetermined distance from the center of the secondary light source. In addition, EUV light is illuminated on the wafer 7 from an oblique direction, and the resolution and the depth of focus of the projection system 6 are further improved. “Normal illumination” means that the shape of the secondary light source formed by the reflection type fly-eye optical system 2 is substantially circular, thereby illuminating the mask 5 and the wafer 7 under an optimum σ value. What you want to do.

Now, the control device 8 controls the first drive system DR1 for rotating the turret plate 51 and the second drive system for changing the aperture diameter of the aperture stop AS2 of the projection system 6 based on the input information from the input device IU. Control is performed between the system DR2 and the third drive system DR3 that inserts and removes the annular light beam conversion unit 60 with respect to the illumination optical path and changes the relative distance between the two reflecting members (60a, 60b) in the annular light beam conversion unit 60. .

Hereinafter, the operation of the control device 8 will be described in detail. When setting the illumination state on the mask 5 to normal illumination, the control device 8 selects “first normal illumination” or “second normal illumination” based on input information from the input device IU. I do. Here, the “first normal illumination” and the “second normal illumination”
The difference from “normal illumination” is that the σ value is different.

For example, the control device 8 sets “the first normal illumination”.
Is selected, the control device 8 sets the aperture at the position of the secondary light source (a large number of light source images) formed on the emission side of the second optical element group 20b constituting one of the reflection type fly-eye optical systems 2. The first drive system DR1 is driven to rotate the turret plate 51 so that the stop 50e is located. At the same time, the control device 8 changes the aperture diameter of the second aperture stop in the projection system 6 via the second drive system DR2 as necessary. At this time, when the orbicular zone light beam conversion unit 60 is set in the illumination light path, the control device 8 retracts the orbicular zone light beam conversion unit 60 from the illumination light path via the third drive system DR3.

Under the above-described lighting system setting state,
When the pattern of the reflective mask 5 is illuminated with the EUV light, the pattern of the reflective mask 5 is sensitized via the projection system 6 under an appropriate “first normal illumination” condition (appropriate σ value). The substrate (wafer) 7 can be exposed. When the control device 8 selects “the second normal illumination”, the control device 8 is formed on the emission side of the second optical element group 20b that constitutes one of the reflection type fly-eye optical systems 2. The first drive system DR1 is driven to rotate the turret plate 51 so that the aperture stop 50b is located at the position of the secondary light source (many light source images). At the same time, the control device 8 changes the aperture diameter of the second aperture stop in the projection system 6 via the second drive system DR2 as necessary. At this time, when the orbicular zone light beam conversion unit 60 is set in the illumination light path, the control device 8 retracts the orbicular zone light beam conversion unit 60 from the illumination light path via the third drive system DR3.

Under the above-described illumination system setting,
When the pattern of the reflective mask 5 is illuminated with the EUV light, the pattern of the reflective mask 5 is changed under an appropriate “second normal illumination” condition (σ value larger than that of the first normal illumination). The photosensitive substrate (wafer) 7 can be exposed through the projection system 6. Note that, as described in the example of FIG.
Also in the example of 7, it is desirable to replace the reflecting mirror 15 with a reflecting mirror having a different focal length in accordance with the variable aperture diameter of the first aperture stop AS1. Thereby, the luminous flux diameter of the EUV light incident on the reflection type fly-eye optical system 2 can be changed according to the size of the opening of the first aperture stop AS1, and an appropriate σ can be maintained while maintaining high illumination efficiency. Illumination under the value is possible.

When the illumination for the reflective mask 5 is set to the oblique illumination, the control device 8 controls the input device IU
Based on the input information from the first one, any one of “first annular illumination”, “second annular illumination”, “first special oblique illumination”, and “second special oblique illumination” Choose one. Here, the difference between the "first annular illumination" and the "second annular illumination" is that an annular ratio of the secondary light source formed in an annular shape is different. The difference between the “first special inclined illumination” and the “second special inclined illumination” is that the distribution of the secondary light sources is different. That is, the secondary light sources in the “first special inclined illumination” are distributed in four fan-shaped areas, and the secondary light sources in the “second special inclined illumination” are distributed in four circular areas. ing.

For example, when “first annular illumination” is selected, the control device 8 is formed on the exit side of the second optical element group 20 b constituting one of the reflection type fly-eye optical systems 2. Aperture stop 50a at the position of the secondary light source (many light source images)
Is driven to rotate the turret plate 51 so that is positioned. When “second annular illumination” is selected, the control device 8 controls the secondary optical system formed on the exit side of the second optical element group 20 b that constitutes one of the reflective fly-eye optical systems 2. The drive system DR1 is driven to rotate the turret plate 51 so that the aperture stop 50f is located at the position of the light source (many light source images). When “first special inclined illumination” is selected, the control device 8 controls the second optical element group 2 that constitutes one of the reflective fly-eye optical systems 2.
Drive system DR1 so that the aperture stop 50c is located at the position of the secondary light source (many light source images) formed on the emission side of the light source 0b.
Is driven to rotate the turret plate 51. Also,
When the “second special tilt illumination” is selected, the control device 8 controls the secondary light source (hereinafter, “second light source”) formed on the emission side of the second optical element group 20 b that constitutes one of the reflective fly-eye optical systems 2. The drive system DR1 is driven to rotate the turret plate 51 so that the aperture stop 50d is located at the position of a large number of light source images.

The above four aperture stops (50a, 50c,
When any one of 50d, 50f) is set in the illumination light path, at the same time, the control device 8 simultaneously transmits the second drive signal in the projection system 6 via the second drive system DR2, if necessary. The aperture diameter of the aperture stop is changed. Next, the control device 8 sets the orbicular zone light beam conversion unit 60 to the illumination optical path and adjusts the orbicular zone light beam conversion unit 60 via the third drive system DR3. The operation of setting and adjusting the annular light beam conversion unit 60 is performed as follows.

First, when the annular light beam conversion unit 60 is not set in the illumination light path, the control unit MCU sets the annular light beam conversion unit 60 in the illumination light path via the third drive system DR3. . Next, the reflection type fly-eye optical system 2
The four aperture stops (50a, 50c, 50d, 50) set on the exit side of the second optical element group 20b constituting one of the
The control unit MCU controls the third drive system DR so that the annular luminous flux is efficiently guided to the opening of one of the aperture stops in the case f).
3, the relative distance between the two reflecting members (60a, 60b) in the annular light beam conversion unit 60 is changed.
Thus, the annular light beam conversion unit 60 can convert the light beam incident thereon into an annular light beam having an appropriate annular ratio.

By setting and adjusting the annular light beam conversion unit 60 as described above, the secondary light source formed in the reflection type fly-eye optical system 2 has four aperture stops (50a, 50c, 50).
d, 50f), it is possible to provide an annular secondary light source having an appropriate annular ratio corresponding to each of the openings, so that the reflective mask and the wafer 7 can be inclinedly illuminated with high illumination efficiency. it can.

A plurality of aperture stops (50a to 50a) having different shapes and sizes due to the rotation of the turret plate 51.
When 0f) is set in the illumination optical path, the illumination state such as illumination unevenness of the arc-shaped illumination area formed on the wafer 7 or the mask 5 may change. At this time, the parabolic mirror 1
5. It is desirable to slightly move at least one optical member of the reflection type fly-eye optical system 2 and the condenser mirror 3 to correct the illumination unevenness in the arc-shaped illumination area.

In the example shown in FIG. 17, the input device IU
Although information such as illumination conditions is input to the control device 8 through the interface, a detection unit that reads information on the reflection mask 5 may be provided. At this time, information on the illumination method is recorded in a position outside the circuit pattern area of the reticle R, for example, using a barcode or the like. The detection unit reads the information on the lighting conditions and transmits the information to the control device 8. The control device 8 controls the three driving devices (DR1 to DR3) based on the information on the lighting conditions as described above.

In the example shown in FIG. 17, the aperture stop is provided at the position of the secondary light source formed by the reflection type fly-eye optical system 2, but the aperture stop (50c, 50d) having four eccentric apertures. Turret plate 5 when "ring zone illumination" and "normal illumination" are performed.
The multiple aperture stops formed in one are not essential to the present invention, as can be readily understood from the principles of the present invention.

In the light beam converting unit 60, the reflecting surfaces of the first reflecting member 60a are constituted by two pairs of plane mirror elements which are opposed to each other and are inclined with respect to each other, and the reflecting surface of the second reflecting member 60a is formed in a quadrangular prism shape. By configuring
Four decentered light beams can be formed. Thereby, the secondary light source formed by the reflective fly-eye optical system 2 can be a quadrupole secondary light source decentered from the center. Therefore, an aperture stop having four eccentric apertures (5
The EUV light can be guided so as to match the openings 0c and 50d).

By the way, in the embodiment shown in FIG. 17, the adjustment mechanism for improving the illumination characteristics (illumination distribution, telecentricity, etc.) on the reflection mask 5 or the photosensitive substrate 7 as the object to be irradiated is described. explain.

First, the illumination characteristic measuring sensor IS provided at one end of the substrate stage WS is connected to the measured projection system 6.
Illuminating characteristic information within the image forming plane (or the exposure visual field) is detected. Thereafter, the control system 8 controls the illumination characteristic measuring sensor IS.
Based on the result of the measurement, it is determined whether or not the current illumination characteristic is acceptable, after performing a predetermined calculation. If the measured illumination characteristics are not acceptable, the control system 8, based on the measurement results, in terms of calculating the correction amount of the illumination characteristics, the first adjusting system (drive system) AD ₁ ~ 4 adjustment system by driving at least one of (drive system) AD _4, for example, performs the correction and telecentricity correction in the illuminance distribution.

Here, based on the output from the control system 8, the first adjustment system AD ₁ makes an arrow about the fifth axis Ax ₅ parallel to the X axis on the exit side of the parabolic mirror 15. The parabolic mirror 15 is inclined by a predetermined amount as shown in a direction T5. Thus, the rotationally symmetric illuminance distribution ID _b2 along the Y direction in the arcuate illumination area IF (the exposure area or the exposure field of the projection system 6) formed on the substrate 7 is corrected, and the illuminance distribution I
D _b2 becomes flat (see FIG. _23B ).

The second adjustment system AD ₂ is configured to control the fifth axis A on the exit side of the parabolic mirror 15 based on the output from the control system 8.
about the sixth axis Ax ₆ perpendicular to the x ₅ (Z-axis parallel to become the axis) is inclined by a predetermined amount parabolic mirror 15 as shown in the arrow direction T6. Thereby, the illuminance distribution _IDc2 having a tilt component along the Y direction in the arc-shaped illumination area IF (the exposure area or the exposure field of the projection system 6) formed on the substrate 7 is corrected, and the illuminance distribution _IDc2 is flat. (See FIG. 23C).

The third adjusting system AD ₃ is based on the output from the control system 8 and includes the reflection type optical integrator 2 (20a, 20b) and the turret plate 52 (including the first driving system D1 and the rotating shaft 52). Is integrally moved (eccentric) by a predetermined amount along a plane (XZ plane) orthogonal to the illumination optical axis Ax _c (Y direction). As a result, the gradient component (tilt telecentricity) of the telecentricity is corrected (FIG. 24).
(B)).

Further, the fourth adjustment system AD ₄ is based on the output from the control system 8, based on the output of the reflection type optical integrator 2 (20 a, 20 b) and the turret plate 52 (including the first drive system D 1 and the rotating shaft 52). integrally move by a predetermined amount in a direction (Y direction) along the illumination optical axis Ax _c a. As a result, a change in telecentricity (magnification telecentricity) that isotropically occurs according to the position from the optical axis is corrected (see FIG. 24C).

The fifth axis Ax shown in FIG._FiveAnd the sixth
Axis Ax₆Satisfies the relationship orthogonal to each other,
Axis Ax_FiveIs at an arbitrary position parallel to the X axis, and the sixth axis
Ax ₆Are set to arbitrary positions parallel to the Z axis.
Can be set.

As described above, the first adjustment system (drive system) AD
By _first to fourth adjustment system (driving system) is driven at least one of the AD _4, the illumination characteristics of the arc-shaped exposure field to be formed on the substrate (exposure region) can be satisfactorily corrected.

The above-described operation of adjusting the illumination characteristics is described above.
The description is omitted because it is the same as the adjustment flow of FIG.
However, the control system 8 shown in FIG.₁~
AD _Four) Without controlling these four adjustment systems (A
D₁~ AD_Four) Can be adjusted by the operator mechanical or electric
It may be a simple adjustment mechanism. In this case, for lighting characteristic measurement
Based on the measurement result by sensor IS (lighting characteristic measuring device)
The operator has four adjustment systems (AD₁~ AD_FourThrough)
To correct illumination distribution and telecentricity
be able to.

FIG. 17 illustrates an example in which the illumination characteristics are measured on the image forming plane (or the exposure field) of the projection system 6 using the illumination characteristic measurement sensor IS provided at one end of the substrate stage WS. However, an illumination characteristic measurement sensor IS is provided at one end of the mask stage MS, and two-dimensional illumination characteristics in the illumination area IF of the illumination system (1 to 4) are measured using the illumination characteristic measurement sensor IS. You may do it. In this measurement, the illumination characteristic measurement mask can be dispensed with.

The orbicular zone light beam conversion unit 60 shown in FIG. 17 is constituted by a reflection type diffractive optical element, and the incident light can be converted into an orbicular zone light beam by the diffraction action of the reflection type diffractive optical element. is there. Furthermore, if the orbicular zone light beam conversion unit 60 is constituted by a plurality of reflection type diffractive optical elements, it is possible to change the orbicular zone ratio. In this case, for example,
The ring zone ratio can be changed by making the interval between the plurality of reflective diffractive optical elements variable.

Further, a reflection type diffractive optical element for quadrupole illumination as a quadrupole beam forming unit is arranged on the incident side of the reflection type integrator 2, and the incident light is diffracted by the diffraction function of the reflection type diffractive optical element. It is possible to convert it into two light beams. Thereby, quadrupole illumination called special tilt illumination can be performed. In this case, a quadrupole light beam forming unit is constituted by a plurality of reflection type diffractive optical elements whose intervals are relatively variable, and if the incident light is converted into four light beams by this, four light beams formed on the pupil plane are obtained. The intensity distribution can be changed in the radial direction with respect to the center of the pupil. Further, if the annular light beam conversion unit 60 and the quadrupole light beam forming unit can be inserted into and removed from the illumination optical path, the annular illumination, the quadrupole illumination or the normal illumination can be selectively performed under high illumination efficiency. It can be carried out. Furthermore, the special inclined illumination is not limited to the quadrupole illumination, and a plurality of incident lights (two, four, eight,...)
Multi-pole illumination may be performed using a multi-pole light beam forming unit that converts light into 2N light beams (where N is an integer of 1 or more). In this case, it is preferable that the multipolar light beam forming unit has a configuration including at least one reflection type diffraction grating.

Further, in addition to forming the multipolar light beam forming unit with a reflection type diffractive optical element, it is a matter of course that the reflection type optical integrator may be formed with at least one or more reflection type diffractive optical elements. .

Next, referring to FIG. 19, FIG.
A second modification of the projection exposure apparatus shown in FIG. Members having the same functions as the members shown in FIG. 16 are denoted by the same reference numerals. In the apparatus shown in FIG. 19 and FIGS. 20 and 21 described below, as shown in FIGS. 16 and 17, each member and each system (MS, WS, AS1 or 51, AS2, DR1, DR2, IU , 8, AD1
AD4, IS), which are shown in FIGS.
The illustration at 1 is omitted. 19 to 21.
In the apparatus shown in FIG. 16, the configuration and the adjustment operation of the adjustment mechanism for adjusting the illumination characteristics (illumination distribution, telecentricity, etc.) on the photosensitive substrate 7 are the same as those in the example shown in FIG. I do. However, in the device shown in FIG.
The tilt telecentric adjustment by the third adjusting device AD3 and the magnification telecentric adjustment by the fourth adjusting device AD4 are performed by the main reflection type fly-eye 2 as the main reflection type optical integrator.
(20a, 20b).

The difference between the exposure apparatus shown in FIG. 16 and the exposure apparatus shown in FIG. 19 is that a reflecting mirror 15 as a collimating mirror and a reflective fly-eye optical system as an optical integrator (multi-light source forming optical system) 2 are provided. 2, an auxiliary reflection type fly-eye optical system 120 as an auxiliary optical integrator (auxiliary multiple light source forming optical system)
And a relay mirror 110 as a relay optical system. From the viewpoint of the arrangement order from the light source side, the auxiliary reflection type fly-eye optical system 120 is a first reflection type fly-eye optical system (first optical integrator, first multiple light source forming optical system), and the main reflection type fly-eye optical system is used. The optical system 120 can also be viewed as a second reflective fly-eye optical system (second optical integrator, second multiple light source forming optical system). Further, the first and second reflective fly's eye optical systems (2, 120) may be configured to include at least one reflective diffraction grating.

The auxiliary reflection type fly-eye optical system 120 shown in FIG. 19 has a first auxiliary reflection element group 120a and a second auxiliary reflection element group 120b. Here, the first reflection-type fly-eye optical system 120 disposed on the incident side
Numerous reflective elements E constituting the auxiliary reflective element group 120a
_As shown in FIG. 9A and FIG. 14A, _120a is similar to the overall shape (outer shape) of the first reflective element group 20a arranged on the incident side of the main reflection type fly-eye optical system 2. It is desirable to be formed in a shape. However, the first auxiliary reflection element group 1
If a large number of reflective elements E _120a constituting 20a are configured in a shape as shown in FIGS. 9A and 14B, it is difficult to arrange the reflective elements E _120a densely without any gap. Become. For this reason, as shown in FIG.
Many reflective elements E12 constituting the auxiliary reflective element group 120a
0a are each formed in a substantially square shape. Further, as shown in FIG. 22A, since the cross section of the light beam incident on the first auxiliary reflection element group 120a is substantially circular, the overall shape (outer shape) of the first auxiliary reflection element group 120a is substantially circular. Many reflective elements E120a are arranged so that Thereby, the first auxiliary reflection element group 12
0a is a large number of light source images (secondary light sources) under high illumination efficiency
Can be formed at or near the second auxiliary reflection element group 120b.

The auxiliary reflection type fly-eye optical system 120
The overall shape (outer shape) of the second auxiliary reflection element group 120b disposed on the exit side of the main reflection type fly-eye optical system 2 is, as shown in FIG. 9B and FIG. Each of the reflection elements E _120b constituting the arranged second reflection element group 20b
It is desirable to form them in a shape similar to the above. Further, each reflecting element E _120b constituting the second auxiliary reflecting element group 120b has a shape similar to or similar to the shape of the light source image formed by the corresponding reflecting element E _120a in the first auxiliary reflecting element group 120a. It is desirable that the shape be such that it receives all.

Here, in the example shown in FIG.
The Li-eye optical system 2 has the configuration shown in FIG.
I do. Therefore, the exit side of the main reflection type fly-eye optical system 2
Of the second reflective element group 20b arranged in
The reflection element E2 of FIG.
It has a square shape. Therefore, the auxiliary reflective flyer
(1) Constituting the first auxiliary reflection element group 120a in the optical system 120
Reflective elements E _120aLight source formed by each of the
Since the image is almost circular, the auxiliary reflection type fly-eye optical system
The second auxiliary reflection element group 120 arranged on the exit side of 120
b each reflective element E_120bThe shape of is shown in FIG.
Indeed, it is almost square. In addition, the main reflection type
Second reflector disposed on the exit side of the Li-eye optical system 2
Each reflection element E constituting the child group 20b_TwoFig. 14
Since it is almost square as shown in FIG.
Second auxiliary disposed on the exit side of fly-eye optical system 120
The overall shape (outer shape) of the reflection element group 120b is shown in FIG.
As shown in (b), a large number of anti-
Shooting element E_120bAre arranged.

As described above, in the example shown in FIG. 19, the first and second auxiliary reflection element groups (120a, 120b) can be constituted by the same reflection element group. Costs can be reduced. In addition,
The second reflective element group 20b and the condenser mirror (condenser optical system) 3 on the mask side of the main reflection type fly-eye optical system 120 shown in FIG. 19 satisfy the relationship of the conditional expression (2) described above.

Next, the operation of the arrangement of the two reflection type fly-eye optical systems (2, 120) will be described. The two reflective fly-eye optical systems (2, 12
0), the auxiliary reflection type fly-eye optical system 12
The number corresponding to the product (N × M) of the number N of the reflecting elements of one reflecting element group constituting 0 and the number M of the reflecting elements of the one reflecting element group constituting the main reflection type fly-eye optical system 2. Light source image of the main reflection type fly-eye optical system 2
It is formed on or near the surface of the reflection element group 20b.
Therefore, on the surface of the main reflection element group 20b or in the vicinity thereof, more light source images (3) are formed than the light source images (secondary light sources) formed by the auxiliary reflection type fly-eye optical system 120.
Next light source) is formed. Since the light from the tertiary light source from the main reflection type fly-eye optical system 2 illuminates the reflection mask 5 and the wafer in an arc shape in a superimposed manner, the apparatus shown in FIG. Thus, the illuminance distribution in the arc-shaped illumination region formed in the above can be made more uniform, and more stable exposure can be realized.

The relay mirror (relay optical system) 110 disposed between the two reflective fly-eye optical systems (2, 120) is an auxiliary reflective fly-eye optical system 120.
The light fluxes from a number of light source images (secondary light sources) are condensed and guided to the main reflection type fly-eye optical system 2. Then, the relay mirror (relay optical system) 110 is provided with substantially the surface of the light source side reflection element group in the auxiliary reflection type fly-eye optical system 120 and the substantially surface of the light source side reflection element group in the main reflection type fly-eye optical system 120. Has the function of optically conjugating. Also, a relay mirror (relay optical system) 110
Has a function to optically conjugate substantially the surface of the reflective element group on the mask side in the auxiliary reflection type fly-eye optical system 120 and almost the surface of the reflective element group on the mask side in the main reflection type fly-eye optical system 120. ing. However, almost the surface of the reflective element group on the light source side in the auxiliary reflection type fly-eye optical system 120, and almost the surface of the reflective element group on the light source side in the main reflection type fly-eye optical system 120 are the mask 5 or the irradiation surface. At a position optically conjugate with the wafer 7,
Further, substantially the surface of the group of reflective elements on the mask side in the auxiliary reflection type fly-eye optical system 120 and almost the surface of the group of reflective elements on the mask side in the main reflection type fly-eye optical system 120 are pupil or aperture stop of the projection system 6. The position is optically conjugate with the position of the AS.

In the apparatus shown in FIG. 19, when the illuminance distribution in the reflective mask 5 and the arc-shaped illumination area formed on the wafer is inclined, the auxiliary reflection type fly-eye optical system 120 is used. It is desirable to move (to move the two reflecting element groups integrally). That is, the two reflection element groups (120a, 120a) in the main reflection type fly-eye optical system 2
When b) is decentered in the X direction or the Z direction, the inclination component of the illuminance distribution can be corrected by the action of the coma aberration of the main reflection type fly-eye optical system 2, and a flat illuminance distribution can be obtained.

For example, when the light illuminance distribution is inclined in the left-right direction (X direction) of the arc-shaped illumination area formed on the surface of the reflective mask 5 or the wafer surface,
By moving the auxiliary reflection type fly-eye optical system 120 in the X direction, the inclination of the light illuminance distribution can be corrected. When the illuminance differs between the central portion and the peripheral portion in the width direction (Z direction) of the arc-shaped illumination region formed on the surface of the reflective mask 5 or the wafer surface, the auxiliary reflective fly-eye optical system is used. By moving 120 in the Z direction, the inclination of the light illuminance distribution can be corrected.

In the case where the uniformizing effect of the two reflection type fly-eye optical systems (2, 120) by the exposure apparatus shown in FIG. 19 is large, it is expected that the illuminance is adjusted by tilting or moving the parabolic mirror 15 or the like. There are things you can't do. In this case,
The reflection type condenser optical system 3 is composed of a plurality of mirrors, and at least one of the mirrors is tilted or moved so that the scanning direction (Y direction, DI ₁ direction) and the non-scanning direction (X direction, DI ₂ ) , The inclination component of the illuminance distribution can be corrected. Further, in the reflecting mirror 4 disposed between the mask 5 and the reflection type condenser optical system 3, a reflection such that the illuminance on the irradiated surface (the pattern surface of the mask 5 or the exposed surface of the substrate) can be uniformly corrected. A reflection surface (reflection film) having a rate characteristic (for example, a predetermined reflectance characteristic depending on an angle) may be formed. Further, a filter may be provided in the illumination light path so as to uniformly correct the illuminance on the irradiated surface (the pattern surface of the mask 5 or the exposed surface of the substrate).

In order for the exposure apparatus shown in FIG. 19 to normally form an image of the reflective mask 5 on the wafer 7, an image of the exit pupil of the illumination system (the second Image of a tertiary light source formed by the reflective fly-eye optical system 2)
Is desirably formed with no aberration. When this condition is not satisfied, it is desirable to adjust the telecentricity of the illumination system by moving the position of the exit pupil of the illumination system to match the position of the entrance pupil of the projection system 6. For example, the main reflection type fly-eye optical system (two reflection element groups 20a,
0b) The telecentricity of the illumination system is adjusted by integrally moving the second aperture stop AS1 and the center of the exit pupil image of the illumination system coincides with the center of the entrance pupil of the projection system 6. be able to. However, when it is not necessary to provide the aperture stop AS1 at the position of the tertiary light source formed by the main reflection type fly-eye optical system 2, the two reflection element groups (120a, 120b) may be moved integrally.

Note that FIG. 16 and FIG.
In order to match the image of the exit pupil of the illumination system with the center of the entrance pupil of the projection system 6, the reflection type fly-eye optical system (two reflection element groups 20a and 20b) 2 and the first aperture stop By moving the AS 1 integrally, the center of the exit pupil image of the illumination system can coincide with the center of the entrance pupil of the projection system 6. When it is not necessary to provide the aperture stop AS1 at the position of the secondary light source formed by the reflective fly-eye optical system 2 shown in FIGS. 16 and 17, two reflections in the reflective fly-eye optical system are required. Element group (20a, 20
What is necessary is just to move b) integrally.

Incidentally, FIG. 16 and FIG.
In the example shown in FIGS. 7 and 19, the light source units (10 to 15) for supplying EUV light to the reflection type fly-eye optical system 2 are:
In practice, since a considerable volume is required, the volume may be equal to or larger than the exposure apparatus main body (the optical system and the control system from the reflection type fly-eye optical system 2 to the wafer 7). . For this reason, the light source unit (10 to 10)
15) and the exposure apparatus main body are independently separated from each other,
There is a possibility that the light source units (10 to 15) and the exposure apparatus main body are installed on independent substrates. In this case, if the floor is distorted due to vibration of the floor due to walking of the worker or the weight of the light source unit (10 to 15) and the exposure device main unit, the optical axis of the light source unit (10 to 15) and the exposure There is a possibility that the optical axis of the optical system in the apparatus main body is displaced and the adjustment state is deviated.

Therefore, in the optical path of the exposure apparatus main body (the optical path from the reflection type fly-eye optical system 2 to the wafer 7),
A photoelectric detector for photoelectrically detecting an optical axis shift of the light source units (10 to 15) is disposed, and a reflecting mirror 1 as a collimating mirror is provided.
It is desirable that the tilt of the mirror 5 be adjustable, and further, a control unit for controlling the tilt of the reflecting mirror 15 be provided based on the output from the photoelectric detector. As a result, even if floor vibration or floor distortion occurs due to walking of the worker, the optical axis of the light source unit (10 to 15) automatically matches the optical axis of the optical system in the exposure apparatus main body. Can be.

Now, it is difficult for a mirror for soft X-rays to obtain a high reflectance like visible light. For this reason, in the exposure apparatus for soft X-rays, it is desired to reduce the number of mirrors constituting the optical system. Therefore, as one method of reducing the number of mirrors, one second reflective element group 10b constituting the reflective fly-eye optical system 2 shown in FIGS. 9B and 14B is curved as a whole. The configuration of the condenser mirror 3 can be omitted. That is, FIG.
(B) and second reflecting element group 10b shown in FIG. 14 (b)
Has a configuration in which a number of reflecting elements E2 are arranged along a reference spherical surface (reference curved surface) having a predetermined curvature.
The function of the condenser mirror 3 can also be used for the second reflection element group 10b. Here, FIG. 20 shows a second reflection element in which one of the second reflection element groups 20b constituting the reflection type fly-eye optical system 2 shown in FIG. 8, FIG. 16 and FIG. The group 20c is shown. By changing the configuration of the second reflection element group 20b on the mask side of the main reflection type fly-eye optical system 2 shown in FIG. 19 as shown in FIG. 20, the second reflection element group 20b shown in FIG. The function of the condenser mirror 3 can also be used. Note that the projection system 6 in FIG. 20 includes six mirrors (6a to 6f) in order to further improve the imaging performance.

In the examples shown in FIG. 16, FIG. 17, FIG. 19, and FIG. 20, the exposure apparatus using the laser / plasma light source is shown. It is the generation of fine droplets called so-called. If the optical components are contaminated by the fine droplets, the performance of the optical system (reflectance of the mirror and uniformity of reflection) deteriorates. For this reason, it is desirable to arrange a filter between the light source unit and the exposure apparatus main body unit that transmits only soft X-rays and does not transmit scattered particles. As this filter, a thin film of a light element called a membrane is preferably used.

Therefore, FIG. 16, FIG. 17, FIG. 19 and FIG.
FIG. 21 shows an example in which a filter 16 for preventing depletion is provided in the exposure apparatus shown in FIG. As shown in FIG. 21, if a filter 16 for preventing depletion is provided between the elliptical mirror 14 and the collimating mirror 15, the elliptical mirror 14 and the filter 16 are each new even if contamination by the deplicit occurs. The running cost can be kept low since the replacement is sufficient.

As described above, since soft X-rays have a low transmittance to the atmosphere, FIGS.
The exposure apparatus shown in FIGS. 19, 20 and 21 is covered by a vacuum chamber 100. However, the heat accumulated in the optical component is difficult to escape, thereby easily distorting the mirror surface. Therefore, it is desirable that each optical component in the vacuum chamber 100 is provided with a cooling mechanism. More preferably, if a plurality of cooling mechanisms are attached to each mirror and the temperature distribution inside the mirror can be controlled, the distortion of the mirror during the exposure operation can be further suppressed.

In the exposure apparatus shown in FIG. 16, FIG. 17, FIG. 19, FIG. 20, and FIG. 21, a multilayer film is provided on the reflection surface of each mirror constituting the optical system. , Molybdenum, ruthenium, rhodium, silicon, and silicon oxide are preferably stacked.

As shown in FIGS. 16 and 17, the use of the illumination condition changing means (variable aperture stop AS1, turret plate 51 having various openings (50a, 50f), etc.) allows the reflection type integrator 2 to be used. If the size of the secondary light source formed by the above is changed (variable σ value) or the shape of the secondary light source is changed (change to any of circular, annular and quadrupolar), The lighting characteristics may change accordingly. Therefore, according to the change of the illumination condition by the illumination condition changing means, an arc-shaped illumination area formed on the mask or an arc-shaped illumination area formed on the photosensitive substrate (arc-shaped exposure area, arc-shaped image plane of the projection system). Correction (adjustment) of the illumination distribution in the scanning direction and the non-scanning direction (direction perpendicular to the scanning direction), and further, an arc-shaped illumination region formed on a mask and an arc-shaped illumination formed on a photosensitive substrate. It is preferable to perform correction (adjustment) of the tilt telecentricity and the magnification telecentricity in the area (the arc-shaped exposure area and the arc-shaped image plane of the projection system). However, depending on the case, at least one of the correction of the tilt component of the illumination distribution in the scanning direction and the non-scanning direction and the correction of the telecentricity including the tilt telecentricity and the magnification telecentricity may be performed.

The above embodiments (FIGS. 1 and 2)
The exposure apparatus according to the present invention can be assembled by electrically, mechanically, or optically connecting each optical member, each stage, and the like in the apparatus shown in 5) so as to achieve the functions described above. .

Next, each of the above embodiments (FIGS.
By forming a predetermined circuit pattern on a wafer or the like as a photosensitive substrate using the exposure apparatus shown in FIG. 25),
An example of a technique for obtaining a semiconductor device as a micro device will be described with reference to a flowchart of FIG.

First, in step 301 of FIG.
A metal film is deposited on one lot of wafers. In the next step 302, a photoresist is applied on the metal film on the l lot of wafers. Then, step 30
3, using a projection exposure apparatus shown in FIGS. 1 to 25, an image of a pattern on a mask (reticle) is transferred via a projection optical system (projection optical unit) to each shot area on a wafer of the lot. Are sequentially exposed and transferred (scanning exposure). Thereafter, in step 304, the photoresist on the one lot of wafers is developed, and in step 305, etching is performed on the one lot of wafers using the resist pattern as a mask, thereby forming a pattern on the mask. A corresponding circuit pattern is formed in each shot area on each wafer. Thereafter, a device such as a semiconductor element is manufactured by forming a circuit pattern of an upper layer and the like.

According to the above-described semiconductor device manufacturing method,
A semiconductor device having an extremely fine circuit pattern can be obtained with high throughput.

In the exposure apparatus shown in FIGS. 1 to 25, a predetermined pattern (circuit pattern, electrode pattern, etc.) is formed on a plate (glass substrate), so that a liquid crystal display element as a micro device is formed. In the following, referring to the flowchart of FIG.
An example of the technique at this time will be described.

In FIG. 27, a pattern forming step 401
Then, the pattern of the reticle is converted to a photosensitive substrate (a glass substrate coated with a resist, etc.) using the exposure apparatus of the present embodiment.
A so-called optical lithography step of performing transfer exposure on the substrate is performed. By this photolithography process, a predetermined pattern including a large number of electrodes and the like is formed on the photosensitive substrate. After that, the exposed substrate is subjected to a developing process, an etching process,
After going through each step such as the reticle peeling step, a predetermined pattern is formed on the substrate, and the process proceeds to the next color filter forming step 402.

Next, in the color filter forming step 402, a large number of sets of three dots corresponding to R (Red), G (Green), and B (Blue) are arranged in a matrix, or R, G, B Are formed in the horizontal scanning line direction to form a color filter. Then, a color filter forming step 402
, A cell assembling step 403 is performed.

In the cell assembling step 403, the substrate having the predetermined pattern obtained in the pattern forming step 401,
Then, a liquid crystal panel (liquid crystal cell) is assembled using the color filters and the like obtained in the color filter forming step 402. In the cell assembling step 403, for example, a liquid crystal is injected between the substrate having the predetermined pattern obtained in the pattern forming step 401 and the color filter obtained in the color filter forming step 402, and a liquid crystal panel <liquid crystal cell >

Thereafter, in a module assembling step 404, components such as an electric circuit and a backlight for performing a display operation of the assembled liquid crystal panel (liquid crystal cell) are attached to complete a liquid crystal display element.

According to the above-described method for manufacturing a liquid crystal display element,
A liquid crystal display device having an extremely fine circuit pattern can be obtained with high throughput.

[0218]

As described above, according to the present invention, a high-performance exposure apparatus capable of sufficiently satisfying severe illumination conditions and a more excellent microdevice manufacturing method by exposing a finer pattern are achieved. Can do things.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of an exposure apparatus according to a first embodiment of the present invention.

FIG. 2 is a front view showing a configuration of a reflection element group 2 shown in FIG.

3A is a front view showing a state of each of the reflection elements in the reflection element group 2 shown in FIG. 2, and FIG. 3B is a front view of FIG.
FIG. 4 is a cross-sectional view showing a state of a cross-sectional shape of the reflection element shown in FIG.

FIG. 4 is a diagram showing a state of an arc-shaped illumination area IF formed on a reflection type mask 5;

FIG. 5 is a diagram showing an operation of the reflection element group 2 shown in FIG.

FIG. 6A is a cross-sectional view showing a state of a cross-sectional shape of a reflective element when each of the reflective elements in the reflective element group 2 has an aspherical shape, and FIG. It is a front view of an element.

FIG. 7 is a cross-sectional view illustrating a cross-sectional shape of the condenser mirror when the condenser mirror has an aspherical shape.

FIG. 8 is a diagram showing a schematic configuration of an exposure apparatus according to a second embodiment of the present invention.

FIG. 9A is a front view showing a configuration of a first reflection element group 20a, and FIG. 9B is a front view showing a configuration of a second reflection element group 20b.

FIG. 10A is a front view showing a state of each reflecting element in the first reflecting element group 20a shown in FIG. 9A;
(B) is a sectional view showing a state of a sectional shape of the reflection element shown in (a).

FIG. 11A is a front view showing a state of each reflecting element in the second reflecting element group 20b shown in FIG. 9B;
(B) is a sectional view showing a state of a sectional shape of the reflection element shown in (a).

FIG. 12 is a diagram illustrating an operation of the first and second reflection element groups illustrated in FIG. 8;

FIG. 13 is a view showing a modification of the exposure apparatus according to the second embodiment shown in FIG.

14A is a front view showing a modification of the first reflection element group 20a shown in FIG. 9A, and FIG.
FIG. 10 is a front view showing a modified example of the second reflection element group 20b in FIG. 9B.

FIG. 15 is a diagram showing an operation of the first and second reflection element groups (20a, 20b) shown in FIG.

FIG. 16 is a view showing a modification of the exposure apparatus according to the first embodiment shown in FIG.

FIG. 17 is a view showing a first modification of the exposure apparatus shown in FIG.

18 is a perspective view showing a configuration of a turret plate 51 shown in FIG.

FIG. 19 is a view showing a second modification of the exposure apparatus shown in FIG.

FIG. 20 is a view showing a third modification of the exposure apparatus shown in FIG.

FIG. 21 is a view showing a fourth modification of the exposure apparatus shown in FIG.

22 (a) is a front view showing the configuration of the first auxiliary reflection element group 20a shown in FIG. 19 (a), and FIG. 22 (b) is the second auxiliary reflection element shown in FIG. 19 (b). It is a front view showing the composition of element group 20b.

FIG. 23 is a diagram for explaining the principle of adjusting the illumination distribution.

FIG. 24 is a diagram for explaining the principle of telecentricity adjustment.

FIG. 25 is a diagram showing a flow of adjusting illumination characteristics.

FIG. 26 is a diagram showing a flowchart of an example of a technique for obtaining a semiconductor device as a micro device.

FIG. 27 is a diagram showing a flowchart of an example of a technique for obtaining a liquid crystal display element as a micro device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Light source device 2, 20a, 20b ... Reflective element group 3 ... Condenser optical system 4 ... Deflection mirror 5 ... Reflective mask 6 ... Projection system 7 ... Wafer

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/30 517

Claims (18)

[Claims] A projection system including an exposure field decentered with respect to an optical axis for projecting a pattern formed on a mask onto a photosensitive substrate; and a light guide for exposing to the exposure field. An illumination optical system that forms an illumination area at a position on the mask that is eccentric to the optical axis of the projection system; and moving the mask and the photosensitive substrate with respect to the projection system along a predetermined scanning exposure direction. Moving means for relatively moving the illuminated area; and a first illumination adjustment for adjusting an illumination characteristic along the scanning exposure direction in an illumination area formed on the mask or an exposure field of the projection system formed on the photosensitive substrate. Means for adjusting illumination characteristics in a direction intersecting with the scanning exposure direction in an illumination area formed on the mask or an exposure field of the projection system formed on the photosensitive substrate; The said ma First telecentricity adjusting means for imparting a tilt component to the telecentricity in the exposure field of the projection system formed on the photosensitive substrate or the illumination area formed on the photosensitive substrate; and the illumination area formed on the mask 2. A second telecentricity adjusting means for adjusting telecentricity according to a position from the optical axis in an exposure field of the projection system formed on the photosensitive substrate. An exposure apparatus according to claim 4. 2. The exposure apparatus according to claim 1, wherein the illumination optical system forms an arc-shaped illumination area on the mask in a direction crossing the scanning exposure direction. 3. The illumination control apparatus according to claim 1, wherein the first illumination adjustment unit applies an illuminance distribution component inclined along the scanning exposure direction, and the second illumination adjustment unit is inclined along a direction intersecting the scanning exposure direction. The exposure apparatus according to claim 1, wherein an illuminance distribution component is provided. 4. The illumination optical system includes a plurality of illumination optical members, and the first and second illumination adjustment means include at least one of the plurality of illumination optical members having the same illumination optical member. 4. The optical system according to claim 1, wherein each of the plurality of illumination optical members is inclined or moved in different directions, or each of the plurality of illumination optical members is inclined or moved. Exposure equipment. 5. The first telecentricity adjusting means,
An illumination optical member different from the illumination optical member adjusted by the first and second illumination adjustment units is adjusted, and the second telecentricity adjustment unit is adjusted by the first telecentricity adjustment unit. The illumination optical member identical to the illumination optical member or an illumination optical member different from the illumination optical member adjusted by the first telecentricity adjusting means is adjusted. Exposure equipment. 6. The illumination optical system includes a plurality of illumination reflection members, and the first illumination adjustment unit, the second illumination adjustment unit, the first telecentricity adjustment unit, and the second telecentricity adjustment unit include: The position of a part of the illumination reflecting member of the illumination optical system is adjusted.
An exposure apparatus according to claim 3. 7. The apparatus according to claim 1, wherein said first and second illumination adjustment means tilt the same illumination reflecting member around different axes or move the same illumination reflecting member in different directions. Item 7. An exposure apparatus according to Item 6. 8. An exposure apparatus according to claim 6, wherein said first and second telecentricity adjustment means move the same illumination reflecting member in mutually different directions. 9. The illumination control device according to claim 1, wherein said first and second illumination adjusting means adjust an illumination reflecting member different from the illumination reflecting member adjusted by said first and second telecentricity adjusting means. The exposure apparatus according to claim 8, wherein 10. An illumination optical system, comprising: a light source means for supplying the light beam; a reflection type optical integrator for uniforming an illumination distribution on the mask or the photosensitive substrate;
4. A light guide optical system disposed between the light source means and the reflection type optical integrator and guiding a light beam from the light source means to the reflection type optical integrator. The exposure apparatus according to any one of the above. 11. An illumination condition changing means for changing an illumination condition in an illumination area formed on the mask or an illumination condition in an exposure field of the projection system formed on the photosensitive substrate, further comprising: The first illumination adjustment unit and the second illumination adjustment unit may be configured such that the first telecentricity and the second telecentricity adjustment unit perform each adjustment according to a change in the illumination condition by the illumination condition changing unit. The exposure apparatus according to any one of claims 1 to 10, wherein 12. A method of manufacturing a micro device using the exposure apparatus according to claim 1.
Illuminating the mask using the illumination optical system;
Exposing the photosensitive substrate to a pattern image of the mask using the projection system. 13. An illumination optical system including a plurality of reflection members for illumination and guiding a light beam for exposure to a mask; a projection system for projecting a pattern of the mask onto a photosensitive substrate; and a mask for the projection system. Moving means for relatively moving the photosensitive substrate along a predetermined scanning exposure direction; and an illumination area formed on the mask or a telecentricity in an exposure field of the projection system formed on the photosensitive substrate. First telecentricity adjusting means for imparting a tilt component to the data;
Second telecentricity adjusting means for adjusting telecentricity according to a position from the optical axis in an illumination area formed on the mask or an exposure field of the projection system formed on the photosensitive substrate. , The first and second
An exposure apparatus, wherein the telecentricity adjustment means adjusts a part of the illumination reflecting member of the illumination optical system. 14. The second telecentricity adjusting means moves the reflecting member for illumination adjusted by the first telecentricity adjusting means in a direction different from that of the first telecentricity adjusting means. 14. The exposure apparatus according to claim 13, wherein an illumination reflective member different from the illumination reflective member adjusted by the telecentricity adjusting means is moved. 15. An illumination optical system comprising: a light source means for supplying the light beam; a reflection type integrator for uniforming an illumination distribution on the mask or the photosensitive substrate; and a light source means and the reflection type integrator. 15. The exposure apparatus according to claim 13, further comprising: a light guiding optical system disposed between said light source means and guiding a light beam from said light source means to said reflection type integrator. 16. The projection system includes an exposure field decentered with respect to an optical axis, and the illumination optical system uses a plurality of illumination reflecting members to guide a light beam for exposure to the exposure field. The illumination area is formed at a position on the mask that is eccentric to the optical axis of the projection system.
The exposure apparatus according to claim 15. 17. An illumination condition changing means for changing an illumination condition in an illumination area formed on the mask or an illumination condition in an exposure field of the projection system formed on the photosensitive substrate, further comprising: A first telecentricity and the second telecentricity
17. The exposure apparatus according to claim 13, wherein the telecentricity adjustment unit performs each adjustment according to a change in illumination condition by the illumination condition change unit. 18. A method for manufacturing a micro device using the exposure apparatus according to claim 13, wherein the step of illuminating the mask using the illumination optical system and the step of illuminating the mask using the projection system. A method for manufacturing a micro device, comprising a step of exposing a pattern image of a mask to the photosensitive substrate.