JP2001123013A - Resin paste composition and semiconductor device usint it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a resin paste composition that has enhanced peel strength against a lead frame and an organic substrate, especially against a copper lead frame and has no reflow cracking on a copper lead frame and an organic substrate and provide a semiconductor device using the resin paste composition. SOLUTION: A resin paste composition comprises (A) an acrylate compound or a methacrylate compound, (B) at least one liquid rubber component selected from epoxidized polybutadienes and carboxyl-terminated acrylonitrile butadiene copolymers, (C) a radical initiator, (D) a coupling agent and (E) a filler. A semiconductor device is provided by adhesively bonding a semiconductor element on a support member with use of the resin paste composition and then sealing it.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a resin paste composition suitable for bonding a semiconductor element such as an IC or an LSI to a lead frame, a glass epoxy wiring board or the like, and a semiconductor device using the same.

[0002]

2. Description of the Related Art The mounting method of a semiconductor device has shifted from the conventional pin insertion method to the surface mounting method in terms of high-density mounting. Soldering used, package 2
Because it is heated to a high temperature of over 00 ° C,
In particular, there has been a problem that package cracks occur due to rapid vaporization / expansion of water contained in the adhesive layer or the sealing material, thereby lowering the reliability of the semiconductor device. This problem is more serious in organic substrates such as copper lead frames and glass epoxy wiring boards than in 42 alloy lead frames. One of the reasons is that the adhesive strength of the adhesive to the copper lead frame or the organic substrate is low.
The other is that the copper lead frame and the organic substrate have a larger linear expansion coefficient than the 42 alloy lead frame, so that the difference in the linear expansion coefficient from the Si chip becomes larger, which causes chip cracks and chip warpage. Sometimes you do.

[0003]

SUMMARY OF THE INVENTION The present invention is to improve the peel strength of a resin paste composition to a lead frame and an organic substrate, particularly to a copper lead frame, and to reduce the stress of the resin paste composition to obtain a chip. An object of the present invention is to provide a resin paste composition free from reflow cracks even in a copper lead frame and an organic substrate, and a semiconductor device using the same, by suppressing the occurrence of cracks and chip warpage to eliminate the above-mentioned disadvantages of the prior art. .

[0004]

The present invention provides (A) an acrylate compound or a methacrylate compound;
(B) at least one or more liquid rubber components selected from epoxidized polybutadiene and carboxy-terminated acrylonitrile butadiene copolymer, (C) a radical initiator, (D) a coupling agent, and (E) a filler. The present invention relates to a resin paste composition and a semiconductor device formed by bonding a semiconductor element to a support member using the resin paste composition and then sealing the semiconductor element.

[0005]

BEST MODE FOR CARRYING OUT THE INVENTION The acrylate compound or methacrylate compound as the component (A) used in the present invention is a compound having one or more acryl or methacryl groups in one molecule. General formula (I)
Compounds represented by (X) to (X) can be used.

(1) General formula (I)

[0007]

Embedded image [Wherein, R ¹ represents hydrogen or a methyl group, and R ² has 1 carbon atom.
To 100, preferably an aliphatic hydrocarbon group having a divalent aliphatic or cyclic structure having 1 to 36 carbon atoms].

The compound represented by the general formula (I) includes
Methyl acrylate, ethyl acrylate, propyl acrylate, isopropyl acrylate, n-butyl acrylate, isobutyl acrylate, t-butyl acrylate, amyl acrylate, isoamyl acrylate, hexyl acrylate, heptyl acrylate, octyl acrylate, 2-ethylhexyl acrylate, nonyl acrylate, decyl acrylate , Isodecyl acrylate, lauryl acrylate, tridecyl acrylate, hexadecyl acrylate, stearyl acrylate, isostearyl acrylate, cyclohexyl acrylate, isobornyl acrylate, tricyclo [5.2.1.0 ^2,6 ] decyl acrylate, 2
Acrylate compounds such as-(tricyclo) [5.2.1.0 ^2,6 ] dec-3-en-8 or 9-yloxyethyl acrylate, methyl methacrylate, ethyl methacrylate, propyl methacrylate, isopropyl methacrylate, n-butyl Methacrylate, isobutyl methacrylate, t-butyl methacrylate, amyl methacrylate, isoamyl methacrylate, hexyl methacrylate, heptyl methacrylate, octyl methacrylate, 2-ethylhexyl methacrylate, nonyl methacrylate, decyl methacrylate, isodecyl methacrylate, lauryl methacrylate, tridecyl methacrylate, hexadecyl methacrylate , Stearyl methacrylate, isostearyl methacrylate, cyclohexyl methacrylate Relate, isobornyl methacrylate, tricyclo [5.2.1.0 ^{2, 6]} decyl methacrylate, 2- (tricyclo) [5.2.1.
[0 ^2,6 ] methacrylate compounds such as deca-3-en-8 or 9-yloxyethyl methacrylate.

(2) General formula (II)

[0010]

Embedded image [Wherein, R ¹ and R ² each represent the same as those in formula (I)].

Examples of the compound represented by the general formula (II) include acrylate compounds such as 2-hydroxyethyl acrylate, 2-hydroxypropyl acrylate and dimer diol monoacrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl methacrylate and dimer diol. There are methacrylate compounds such as monomethacrylate.

(3) General formula (III)

[0013]

Embedded image [Wherein, R ¹ represents the same one as in the general formula (I), R ³ represents hydrogen, a methyl group or a phenoxymethyl group, R ⁴ represents hydrogen, an alkyl group having 1 to 6 carbon atoms, a phenyl group. Or a benzoyl group, and n represents an integer of 1 to 50].

The compound represented by the general formula (III) includes diethylene glycol acrylate, polyethylene glycol acrylate, polypropylene glycol acrylate, 2-methoxyethyl acrylate, 2-ethoxyethyl acrylate, 2-butoxyethyl acrylate, methoxydiethylene glycol acrylate,
Acrylate compounds such as methoxypolyethylene glycol acrylate, 2-phenoxyethyl acrylate, phenoxydiethylene glycol acrylate, phenoxypolyethylene glycol acrylate, 2-benzoyloxyethyl acrylate, 2-hydroxy-3-phenoxypropyl acrylate, diethylene glycol methacrylate, polyethylene glycol methacrylate, and polypropylene glycol Methacrylate, 2-
Methoxyethyl methacrylate, 2-ethoxyethyl methacrylate, 2-butoxyethyl methacrylate, methoxydiethylene glycol methacrylate, methoxypolyethylene glycol methacrylate, 2-phenoxyethyl methacrylate, phenoxydiethylene glycol methacrylate, phenoxypolyethylene glycol methacrylate, 2-benzoyloxyethyl methacrylate, 2-hydroxy There is a methacrylate compound such as -3-phenoxypropyl methacrylate.

(4) General formula (IV)

[0016]

Embedded image [In the formula, R ¹ represents the same as in the general formula (I), and R ⁵ represents a phenyl group, a nitrile group, —Si (OR ⁶ )
₃ (R ⁶ represents an alkyl group having 1 to ⁶ carbon atoms) or a group represented by the following formula:

[0017]

Embedded image (R ⁷ , R ⁸ and R ⁹ are each independently hydrogen or carbon atom 1
Represents an alkyl group having from 6 to 6, wherein R ¹⁰ is hydrogen or a
Represents an alkyl group or a phenyl group), m is 0,
1, 2, or 3].

The compound represented by the general formula (IV) includes benzyl acrylate, 2-cyanoethyl acrylate, γ-acryloxypropyltrimethoxysilane,
Glycidyl acrylate, tetrahydrofurfuryl acrylate, tetrahydropyranyl acrylate, dimethylaminoethyl acrylate, diethylaminoethyl acrylate, 1,2,2,6,6-pentamethylpiperidinyl acrylate, 2,2,6,6-tetramethylpi Acrylate compounds such as peridinyl acrylate, acryloxyethyl phosphate, acryloxyethyl phenyl acid phosphate, β-acryloyloxyethyl hydrogen phthalate, β-acryloyloxyethyl hydrogen succinate, benzyl methacrylate, 2-cyanoethyl methacrylate, γ-methacryl Roxypropyltrimethoxysilane, glycidyl methacrylate, tetrahydrofurfuryl methacrylate, tetrahydropyra Methacrylate, dimethylaminoethyl methacrylate, diethylaminoethyl methacrylate, 1,2,2,6,6-pentamethylpiperidinyl methacrylate, 2,2,6,6-tetramethylpiperidinyl methacrylate, methacryloyloxyethyl phosphate, methacryloyl Methacrylates such as oxyethyl phenyl acid phosphate, β-methacryloyloxyethyl hydrogen phthalate, β
Methacrylate compounds such as methacryloyloxyethyl hydrogen succinate;

(5) General formula (V)

[0020]

Embedded image [Wherein, R ¹ and R ² each represent the same as those in formula (I)].

As the compound represented by the general formula (V),
Ethylene glycol diacrylate, 1,4-butanediol diacrylate, 1,6-hexanediol diacrylate, 1,9-nonanediol diacrylate,
Diacrylate compounds such as 1,3-butanediol diacrylate, neopentyl glycol diacrylate, dimer diol diacrylate, dimethylol tricyclodecane diacrylate, ethylene glycol dimethacrylate, 1,4-butanediol dimethacrylate, 1,6 Hexanediol dimethacrylate, 1,
9-nonanediol dimethacrylate, 1,3-butanediol dimethacrylate, neopentyl glycol dimethacrylate, dimer diol dimethacrylate,
There are dimethacrylate compounds such as dimethylol tricyclodecane dimethacrylate.

(6) General formula (VI)

[0023]

Embedded image [In the formula, R ¹ , R ³ and n are the same as those in the general formula (III) and represent the same as described above].

Examples of the compound represented by the general formula (VI) include diacrylates such as diethylene glycol diacrylate, triethylene glycol diacrylate, tetraethylene glycol diacrylate, polyethylene glycol diacrylate, tripropylene glycol diacrylate, and polypropylene glycol diacrylate. Compounds include dimethacrylate compounds such as diethylene glycol dimethacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, polyethylene glycol dimethacrylate, tripropylene glycol dimethacrylate, and polypropylene glycol dimethacrylate.

(7) Formula (VII)

[0026]

Embedded image [Wherein, R ¹ represents the same as in the general formula (I), and R ¹¹ and R ¹² each independently represent hydrogen or a methyl group].

Examples of the compound represented by the general formula (VII) include a reaction product of 1 mol of bisphenol A, bisphenol F or bisphenol AD and 2 mol of glycidyl acrylate, or a reaction product of 1 mol of bisphenol A, bisphenol F or bisphenol AD and 2 mol of glycidyl methacrylate. There are reactants and the like.

(8) General formula (VIII)

[0029]

Embedded image Wherein R ¹ , R ¹¹ and R ¹² are each represented by the general formula (VI
R ¹³ and R ¹⁴ each independently represent hydrogen or a methyl group, and p and q each independently represent an integer of 1 to 20].

Examples of the compound represented by the general formula (VIII) include diacrylate of a polyethylene oxide adduct of bisphenol A, bisphenol F or bisphenol AD, diacrylate of a polypropylene oxide adduct of bisphenol A, bisphenol F or bisphenol AD, and bisphenol. A, bisphenol F
Or dimethacrylate of bisphenol AD polyethylene oxide adduct, bisphenol A, bisphenol F or bisphenol AD polypropylene oxide adduct dimethacrylate.

(9) Formula (IX)

[0032]

Embedded image [Wherein, R ¹ represents the same one as in the general formula (I), R ¹⁵ , R ¹⁶ , R ¹⁷ and R ¹⁸ each independently represent hydrogen or a methyl group, and x represents an integer of 1 to 20. A compound represented by the following formula:

Examples of the compound represented by the general formula (IX) include bis (acryloyloxypropyl) polydimethylsiloxane, bis (acryloyloxypropyl) methylsiloxane-dimethylsiloxane copolymer, bis (methacryloyloxypropyl) polydimethylsiloxane, and bis (methacryloyloxypropyl) polydimethylsiloxane. (Methacryloyloxypropyl) methylsiloxane-dimethylsiloxane copolymer.

(10) General formula (X)

[0035]

Embedded image [Wherein, R ¹ represents the same one as in the general formula (I), r, s, t and u each independently represent a number of 0 or more indicating an average value of the number of repetitions, and r + t is 0.1 that's all,
It is preferably 0.3 to 5, and s + u is 1 or more, preferably 1 to 100].

The compound represented by the general formula (X) includes
There is a reaction product obtained by reacting polybutadiene to which maleic anhydride is added with an acrylate compound or a methacrylate compound having a hydroxyl group in the molecule, and a hydrogenated product thereof. For example, MM-1000-80, MA
C-1000-80 (both are trade names of Nippon Petrochemical Co., Ltd.) and the like.

As the acrylate compound or methacrylate compound of the component (A), the above compounds can be used alone or in combination of two or more.

The liquid rubber component (B) used in the present invention preferably has an epoxy equivalent of 1000 (g / e).
q) or less, more preferably 50 to 500 (g / eq), and an epoxidized polybutadiene having a viscosity at room temperature of preferably 1000 Pa · s or less, more preferably 10 to 100 Pa · s, and a viscosity at room temperature is preferred. Is 100
0 Pa · s or less, more preferably 50 to 500 Pa · s
The carboxy-terminal acrylonitrile butadiene copolymer can be used alone or in combination. The epoxy equivalent was determined by the perchloric acid method.

As the epoxidized polybutadiene, those having at least one hydroxyl group in the molecule may be used.

The amount of the component (B) is 100 parts (A)
It is preferably used in an amount of 10 to 100 parts by weight, more preferably 30 to 80 parts by weight based on parts by weight.
If the amount is less than 10 parts by weight, the effect of reducing chip warpage tends to be inferior. If the amount exceeds 100 parts by weight, the viscosity increases and the workability of the resin paste composition tends to decrease.

The radical initiator (C) used in the present invention is not particularly limited, but is preferably a peroxide from the viewpoint of voids and the like, and from the viewpoint of the curability and viscosity stability of the resin paste composition, Those having a peroxide decomposition temperature of 70 to 170 ° C in a rapid heating test are preferred. Specific examples of the radical initiator include 1,1,3,3-tetramethylperoxy 2-ethylhexanoate, 1,1-bis (t-butylperoxy) cyclohexane, and 1,1-bis (t- Butylperoxy) cyclododecane, di-t-
Butyl peroxyisophthalate, t-butyl perbenzoate, dicumyl peroxide, t-butyl cumyl peroxide, 2,5-dimethyl-2,5-di (t-
Butylperoxy) hexane, 2,5-dimethyl-2,
5-di (t-butylperoxy) hexine, cumene hydroperoxide and the like.

The amount of the radical initiator is preferably from 0.1 to 10 parts by weight, particularly preferably from 0.5 to 5 parts by weight, per 100 parts by weight of the total amount of the component (A). When the compounding ratio is less than 0.1 part by weight, the curability tends to decrease, and when the compounding ratio exceeds 10 parts by weight, the volatile matter increases and voids called voids tend to be easily generated in the cured product. is there.

The coupling agent (D) used in the present invention is not particularly limited, and includes a silane coupling agent, a titanate coupling agent, an aluminum coupling agent, a zirconate coupling agent, and a zircoaluminate cup. Various materials such as a ring agent are used.

Specific examples of the coupling agent include methyltrimethoxysilane, methyltriethoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltriacetoxysilane, vinyl-tris (2-methoxyethoxy) silane, γ-methacryloxypropyltrimethoxysilane, γ-methacryloxypropylmethyldimethoxysilane, methyltri (methacryloxyethoxy) silane, γ-acryloxypropyltrimethoxysilane, γ-aminopropyltrimethoxysilane , Γ-aminopropyltriethoxysilane, N-β-
(Aminoethyl) -γ-aminopropyltrimethoxysilane, N-β- (aminoethyl) -γ-aminopropylmethyldimethoxysilane, N-β- (N-vinylbenzylaminoethyl) -γ-aminopropyltrimethoxysilane , Γ-anilinopropyltrimethoxysilane, γ-
Ureidopropyltrimethoxysilane, γ-ureidopropyltriethoxysilane, 3- (4,5-dihydroimidazolyl) propyltriethoxysilane, β- (3
4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ
-Glycidoxypropylmethyldiethoxysilane, γ-
Glycidoxypropylmethyldiisopropenoxysilane, methyltriglycidoxysilane, γ-mercaptopropyltrimethoxysilane, γ-mercaptopropyltriethoxysilane, γ-mercaptopropylmethyldimethoxysilane, trimethylsilyl isocyanate, dimethylsilyl isocyanate, phenylsilyl Silane coupling agents such as triisocyanate, tetraisocyanate silane, methylsilyl triisocyanate, vinylsilyl triisocyanate, ethoxysilane triisocyanate, isopropyl triisostearoyl titanate, isopropyl tridodecylbenzenesulfonyl titanate, isopropyl tris (dioctyl pyrophosphate) titanate , Tetraisopropyl bis (dioctyl phosphite) Tanate, tetraoctylbis (ditridecylphosphite) titanate, tetra (2,2-diallyloxymethyl-1-butyl) bis (di-tridecyl) phosphite titanate, bis (dioctylpyrophosphate) oxyacetate titanate, bis (dioctyl) (Pyrophosphate) ethylene titanate, isopropyl trioctanoyl titanate, isopropyl dimethacryl isostearyl titanate, isopropyl (dioctyl phosphate) titanate, isopropyl tricumyl phenyl titanate, isopropyl tri (N-aminoethyl aminoethyl) titanate, dicumyl phenyl oxyacetate Titanate-based coupling agents such as titanate and diisostearoylethylene titanate, acetoalkoxy aluminum Aluminum-based coupling agents such as umdiisopropylate, tetrapropyl zirconate, tetrabutyl zirconate, tetra (triethanolamine) zirconate, tetraisopropyl zirconate, zirconium acetylacetonate acetylacetone zirconium butyrate, zirconium stearate butyrate, etc. And the like.

The compounding amount of the coupling agent is preferably from 0.1 to 10 parts by weight, particularly preferably from 0.5 to 5 parts by weight, based on 100 parts by weight of the total of the components (A) and (B). When the compounding ratio is less than 0.1 part by weight, the effect of improving the adhesive strength tends to be inferior. When the compounding ratio exceeds 10 parts by weight, the volatile matter increases, and voids called voids are easily generated in the cured product. Tend.

The filler (E) used in the present invention is not particularly limited, and various fillers can be used. For example, gold, silver, copper, nickel, iron, aluminum, stainless steel, silicon oxide, boron nitride, Powders such as aluminum oxide and aluminum borate are exemplified. The amount of the filler is not particularly limited, but is preferably 20 to 85 parts by weight based on the total amount of the resin paste composition. When the amount is less than 20 parts by weight, the adhesive strength at the time of heating tends to decrease,
If the amount exceeds 85 parts by weight, the viscosity increases, and the workability at the time of production and the coating workability at the time of use tend to decrease.

The silver powder used as the filler in (E) has a spherical shape and an average particle diameter of 100 μm or less.
Particularly, those having a thickness of 0.5 to 50 μm are preferable. Average particle size is 1
If it exceeds 00 μm, the resin component in the resin paste composition and the filler tend to separate, and the filler tends to settle.

The resin paste composition according to the present invention may further comprise, if necessary, a toughness improver such as polybutadiene, a polybutadiene derivative, acrylonitrile butadiene rubber, styrene butadiene rubber, urethane acrylate, a hygroscopic agent such as calcium oxide and magnesium oxide, Fluorine surfactant, nonionic surfactant, wetting improver such as higher fatty acid, defoaming agent such as silicone oil, ion trapping agent such as inorganic ion exchanger, solvent for viscosity adjustment, etc. They can be appropriately added in combination.

In the present invention, a semiconductor device can be obtained by bonding a semiconductor element and a substrate using the resin paste composition produced as described above and then sealing it.

In order to adhere a semiconductor element to a support member such as a lead frame using the resin paste composition of the present invention, first, the resin paste composition is applied to the support member by a dispense method, a screen printing method, a stamping method or the like. After that, the semiconductor element can be press-bonded, and then heat-cured using a heating device such as an oven or a heat block. Further, after a wire bonding step, the semiconductor device is sealed by a usual method, whereby a completed semiconductor device can be obtained.

The above-mentioned heat curing differs depending on the case of long-time curing at a low temperature or the case of rapid curing at a high temperature, but is usually carried out at a temperature of 100 to 300 ° C., preferably 130 to 220 ° C.
It is preferable to carry out for 5 seconds to 3 hours, preferably 15 seconds to 1 hour.

[0052]

Next, the present invention will be described in detail with reference to examples, but the present invention is not limited thereto.

The epoxy resin and the curing agent used in the comparative examples were prepared as follows. (1) Preparation of epoxy resin 7.5 parts by weight of YDF-170 (trade name, manufactured by Toto Kasei Co., Ltd., bisphenol F type epoxy resin, epoxy equivalent = 170) and YL-980 (trade name, manufactured by Yuka Shell Epoxy Co., Ltd.) Bisphenol A type epoxy resin, epoxy equivalent =
185) 7.5 parts by weight were heated to 80 ° C., and stirring was continued for 1 hour to obtain a uniform epoxy resin solution. (2) Preparation of curing agent H-1 (manufactured by Meiwa Kasei Co., Ltd., trade name, phenol novolak resin, OH equivalent = 106) 1.0 part by weight and PP-101 (manufactured by Toto Kasei Co., trade name, alkyl) as a diluent 1. phenylglycidyl ether, epoxy equivalent = 230)
0 parts by weight was heated to 100 ° C., and stirring was continued for 1 hour to obtain a uniform phenol resin solution.

The compounds used in Comparative Examples and Examples are illustrated below. (1) Curing accelerator 2P4MHZ (trade name of imidazoles manufactured by Shikoku Chemicals) (2) Diluent PP-101 (trade name of alkylphenylglycidyl ether manufactured by Toto Kasei Co., epoxy equivalent = 230) (3) Acrylic acid Ester compound and methacrylate compound R-551 (trade name of diacrylate manufactured by Nippon Kayaku Co., bisphenol A polyethylene glycol diacrylate), lauryl acrylate (4) Liquid rubber component PB-4700 (epoxidized polybutadiene manufactured by Daicel Chemical Industries, Ltd.) Trade name, epoxy equivalent = 150-200) CTBN1300 × 31 (trade name of carboxy-terminated acrylonitrile butadiene copolymer manufactured by Ube Industries, Ltd.) (5) Radical initiator 1,1-bis (t-butylperoxy) cyclohexane ( 6) Coupling agent γ -Glycidoxypropyltrimethoxysilane (7) Filler TCG-1 (trade name of silver powder manufactured by Tokuri Chemical Laboratories, average particle size 2 μm) F-201 (trade name of spherical silver powder manufactured by Tokuriki Chemical Laboratories) ,
(Average particle size: 5 μm) In a mixing ratio shown in Table 1, each material was mixed and kneaded using three rolls, and then defoamed at 5 Torr or less for 10 minutes to obtain a resin paste composition. Was.

The characteristics (viscosity, adhesive strength, chip warpage and reflow resistance) of this resin paste composition were examined by the following methods. Table 1 shows the results. (1) Viscosity: The viscosity (Pa · s) at 25 ° C. was measured using an EHD type rotational viscometer (manufactured by Tokyo Keiki Co., Ltd.). (2) Die shear strength: about 0.2 mg of a resin paste composition is applied on a copper lead frame with Ag plating, and a 2 mm × 2 mm Si chip (about 0.4 mm thick) is placed thereon.
Was press-bonded, further heated in an oven to 150 ° C. for 30 minutes and cured at 150 ° C. for 1 hour. This was measured for room-temperature shear adhesive strength (kgf / chip) using an automatic adhesive strength tester (BT100, manufactured by Dage). (3) Peel strength: about 3.2 mg of the resin paste composition was applied on a copper lead frame, and 8 mm × 8 m was applied thereon.
Then, an Si chip having a thickness of 0.4 mm (thickness: 0.4 mm) was press-bonded, heated to 150 ° C. for 30 minutes in an oven, and cured at 150 ° C. for 1 hour. This was peeled off at 240 ° C. (kgf) using an automatic adhesive device (manufactured by Hitachi Chemical Co., Ltd.).
/ Chip). (4) Chip warpage: about 3.2 mg of a resin paste composition was applied on a copper lead frame, and 5 mm × 13
mm Si chip (0.4 mm thick) was press-bonded, heated to 150 ° C. in an oven for 30 minutes, and cured at 150 ° C. for 1 hour. This was measured with a surface roughness meter (Sloan, D
ektuk 3030), and the chip warpage (μm) was measured. (5) Reflow resistance: Using the resin paste compositions obtained in Examples and Comparative Examples, the following lead frames and Si chips were cured and bonded under the following curing conditions. Thereafter, an epoxy encapsulant manufactured by Hitachi Chemical Co., Ltd. (trade name: CEL-462)
0) to obtain a package for a solder reflow test. The temperature and humidity of the package are 85 ° C, respectively.
Moisture was absorbed for 96 hours in a thermo-hygrostat set at 60%. Thereafter, solder reflow was performed under a reflow condition of 240 ° C./10 seconds, the number of occurrences of external cracks in the package was observed with a microscope (magnification: 15 times), and the number of occurrences of internal cracks in the package was observed with an ultrasonic microscope. The number of cracked samples is shown for five samples. QFP (Quad Flat Package) Chip size: 8 mm x 10 mm Package size: 14 mm x 20 mm x 2 mm Supporting member: Copper lead frame Curing conditions: Heat up to 150 ° C in 30 minutes, cure at 150 ° C for 1 hour BGA (Ball Grid Array) Chip size: 10 mm x 10 mm Package size: 24 mm x 24 mm x 1.5 mm Supporting member: glass / epoxy board Curing conditions: Heat up to 150 ° C in 30 minutes, cure at 150 ° C for 1 hour

[0056]

[Table 1] From the results in Table 1, the resin paste compositions of the present invention (Examples 1 and 2) have better peel strength and chip warpage than the conventional resin paste compositions using epoxy resin (Comparative Example 1). And the reflow resistance was also excellent.

When no coupling agent is added (Comparative Example 2) or when no liquid rubber component is added (Comparative Example 3)
In this case, the reflow resistance is reduced.

From the above, according to the resin paste composition of the present invention, the occurrence of internal cracks in the package is suppressed, and the package has high reliability even in QFP using a copper lead frame and BGA using a glass epoxy substrate. Was obtained.

Further, from Table 1, it was confirmed that the use of spherical silver powder (Example 2) improved the die shear strength.

[0060]

The resin paste composition of the present invention, when used as a die bonding material for a semiconductor device, suppresses chip cracks, chip warpage, and peeling of the paste layer during solder reflow even in a copper lead frame and an organic substrate. And reduce the occurrence of reflow cracks. As a result, the reliability of the semiconductor device can be improved.

Continuation of the front page F term (reference) 4J002 AC07X AC11X BG04W BG05W BG07W BH02W BL01W BQ00W CD01W CD05W CH02W CP03W DA078 DA088 DA098 DE148 DJ018 DK008 EE047 EG047 EK026 EK036 EK0 A5 EX057 EV070 EF0A EK037 BA53

Claims (6)

[Claims] 1. A (A) acrylate or methacrylate compound, (B) at least one or more liquid rubber components selected from epoxidized polybutadiene and carboxy-terminated acrylonitrile butadiene copolymer, (C) radical initiation A resin paste composition comprising an agent, (D) a coupling agent, and (E) a filler. 2. The resin paste composition according to claim 1, wherein the filler contains silver powder. 3. The resin paste composition according to claim 2, wherein the silver powder contains a silver powder having a spherical shape and an average particle diameter of 100 μm or less. 4. A semiconductor device obtained by bonding a semiconductor element to a support member using the resin paste composition according to claim 1, and then sealing the semiconductor element. 5. A semiconductor device having a QFP (Quad) structure.
5. The semiconductor device according to claim 4, wherein the semiconductor device has a structure of a flat package. 6. A semiconductor device having a BGA (Ball) structure.
5. The semiconductor device according to claim 4, wherein the semiconductor device has a (Grid Array) type structure.