JP2001119003A - Method for manufacturing polycrystalline semiconductor film - Google Patents
Method for manufacturing polycrystalline semiconductor filmInfo
- Publication number
- JP2001119003A JP2001119003A JP30086899A JP30086899A JP2001119003A JP 2001119003 A JP2001119003 A JP 2001119003A JP 30086899 A JP30086899 A JP 30086899A JP 30086899 A JP30086899 A JP 30086899A JP 2001119003 A JP2001119003 A JP 2001119003A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- polycrystalline silicon
- silicon film
- semiconductor film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 29
- 238000000034 method Methods 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims abstract description 84
- 239000000463 material Substances 0.000 claims abstract description 52
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 48
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 18
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 238000002844 melting Methods 0.000 claims abstract description 15
- 230000008018 melting Effects 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 14
- 239000004094 surface-active agent Substances 0.000 claims description 6
- 239000000693 micelle Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 abstract description 37
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 33
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 14
- 239000010453 quartz Substances 0.000 abstract description 11
- 239000011148 porous material Substances 0.000 abstract description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 8
- 239000013078 crystal Substances 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 81
- 239000012528 membrane Substances 0.000 description 9
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 238000004093 laser heating Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
(57)【要約】
【課題】 低融点ガラス等の基板上に膜質の良い多結晶
シリコン膜を形成すること。
【解決手段】 高融点材料である石英基板１０上に、膜
内にのみ緻密な細孔を備えるシリカ系多孔体膜１２を形
成する。多孔体膜１２を形成した後、この膜１２の上に
非晶質又は多結晶のシリコン膜１４を形成し、高温熱処
理を施してシリコン膜を多結晶化し、結晶粒サイズを大
きくかつ均一に成長させて多結晶シリコン膜１６を形成
し、転写母材を得る。次に被転写基板として、低融点の
ガラス基板２０の表面に、多結晶シリコン膜１６の表面
が当接するよう転写母材を配置し、多結晶シリコン膜１
６とガラス基板２０とを接合し、エッチング材としての
フッ酸溶液に浸す。多孔質膜１２がこのフッ酸により最
も速くエッチングされるため、母材の石英基板１０から
多結晶シリコン膜１６が剥離されて、ガラス基板２０に
残り、結果としてガラス基板２０上に高温熱処理が施さ
れて得られた膜質の良い多結晶シリコン膜１６が転写さ
れる。
(57) [Problem] To form a polycrystalline silicon film having good film quality on a substrate such as a low melting point glass. SOLUTION: On a quartz substrate 10 which is a high melting point material, a silica-based porous film 12 having dense pores only in the film is formed. After the porous film 12 is formed, an amorphous or polycrystalline silicon film 14 is formed on the film 12 and subjected to a high-temperature heat treatment to polycrystallize the silicon film, thereby increasing the crystal grain size and growing uniformly. Thus, a polycrystalline silicon film 16 is formed, and a transfer base material is obtained. Next, as a substrate to be transferred, a transfer base material is placed on the surface of the low melting point glass substrate 20 so that the surface of the polycrystalline silicon film 16 is in contact with the surface of the polycrystalline silicon film 16.
6 and the glass substrate 20 are joined and immersed in a hydrofluoric acid solution as an etching material. Since the porous film 12 is etched fastest by this hydrofluoric acid, the polycrystalline silicon film 16 is peeled off from the base quartz substrate 10 and remains on the glass substrate 20. As a result, high-temperature heat treatment is performed on the glass substrate 20. The resulting polycrystalline silicon film 16 of good film quality is transferred.
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、低融点材料など
からなる基板上に膜質の良い多結晶半導体膜を作成する
方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a polycrystalline semiconductor film having good quality on a substrate made of a material having a low melting point.
【０００２】[0002]
【従来の技術】多結晶シリコンなどの多結晶半導体膜
は、電子の移動度が非晶質シリコンに比べて高く、薄膜
トランジスタなどの能動層として用いた場合に、例え
ば、(i)必要な動作速度を実現できる、(ii)高温シリコ
ンプロセスにおいて多用されている自己整合法によりト
ランジスタのチャネル領域を形成できる、等の有利な特
徴がある。そしてより特性の良い結晶粒サイズが大きく
かつ均一な多結晶シリコン膜を基板上に形成することが
望まれている。2. Description of the Related Art A polycrystalline semiconductor film such as polycrystalline silicon has a higher electron mobility than amorphous silicon. When used as an active layer such as a thin film transistor, for example, (i) the required operating speed And (ii) the channel region of the transistor can be formed by a self-alignment method often used in a high-temperature silicon process. It is desired to form a polycrystalline silicon film having better characteristics and a large and uniform crystal grain size on a substrate.
【０００３】また、一方、より安価な多結晶シリコン素
子を得るには、６００℃程度以下の安価なガラス基板上
に多結晶シリコン膜を形成することが望ましく、現在、
安価なガラス基板上に多結晶シリコン膜を形成する方法
として、低温で成膜可能な非晶質状態の膜をガラス基板
上に形成し、この膜にレーザアニールを施して多結晶化
させるという方法が用いられている。On the other hand, in order to obtain a more inexpensive polycrystalline silicon element, it is desirable to form a polycrystalline silicon film on an inexpensive glass substrate at about 600 ° C. or less.
As a method of forming a polycrystalline silicon film on an inexpensive glass substrate, a method of forming an amorphous film that can be formed at a low temperature on a glass substrate and subjecting the film to laser annealing to be polycrystallized. Is used.
【０００４】図２は、この従来のレーザアニールによる
多結晶半導体膜の形成方法を示している。基板３０は、
６００℃以上になると収縮を生じてしまう安価なガラス
基板である。この低融点ガラス基板３０上には、まず、
図２（ａ）に示すように、３００℃程度で成膜可能な非
晶質シリコン（アモルファスシリコン）膜３２を形成す
る。次に、図２（ｂ）のように成膜した非晶質シリコン
膜３２に対し、光学系によってライン状に整形されたエ
キシマレーザビームを順次照射・走査してゆき、基板３
０上の非晶質シリコン膜３２だけを加熱して多結晶化す
る。FIG. 2 shows a conventional method of forming a polycrystalline semiconductor film by laser annealing. The substrate 30
It is an inexpensive glass substrate that shrinks at 600 ° C. or higher. First, on this low melting point glass substrate 30,
As shown in FIG. 2A, an amorphous silicon (amorphous silicon) film 32 that can be formed at about 300 ° C. is formed. Next, the amorphous silicon film 32 formed as shown in FIG. 2B is sequentially irradiated and scanned with an excimer laser beam shaped into a line by an optical system.
Only the amorphous silicon film 32 on 0 is heated and polycrystallized.
【０００５】このようなプロセスは、レーザ加熱プロセ
スと呼ばれ、例えば、"IEEE Transaction on Electron
Device" vol.43, No.9,1996,pp.1454-1458等に詳しく記
載されている。[0005] Such a process is called a laser heating process, for example, "IEEE Transaction on Electron".
Device "vol.43, No.9, 1996, pp.1454-1458 and the like.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、レーザ
加熱によって成長する結晶粒サイズは、レーザパワーに
対して非常に敏感であり、膜内で粒径にバラツキを生ず
るという問題がある。また、エキシマレーザはパルスレ
ーザであるため、順に照射位置をずらしながら非晶質シ
リコン膜に照射していく際に、各パルス照射エリアの境
界におけるエネルギの差異は避けられず、エリア境界に
おいて結晶粒サイズにバラツキを生じてしまう。そし
て、このような結晶粒サイズのバラツキは、この多結晶
シリコン膜を能動層として利用したトランジスタの性能
のバラツキの原因となり、本来の多結晶シリコンの有利
な特性を発揮しきれていない。However, the size of crystal grains grown by laser heating is very sensitive to laser power, and there is a problem that the grain size varies in the film. In addition, since the excimer laser is a pulse laser, when irradiating the amorphous silicon film while sequentially shifting the irradiation position, a difference in energy at the boundary of each pulse irradiation area is inevitable, and the crystal grain at the area boundary is inevitable. The size will vary. Such a variation in crystal grain size causes a variation in the performance of a transistor using this polycrystalline silicon film as an active layer, and the original advantageous characteristics of polycrystalline silicon have not been fully exhibited.
【０００７】上記課題を解決するために、この発明は、
膜質の優れた多結晶半導体膜を低融点な基板であっても
形成可能な方法を提供することを目的とする。[0007] In order to solve the above problems, the present invention provides:
It is an object of the present invention to provide a method capable of forming a polycrystalline semiconductor film having excellent film quality even on a substrate having a low melting point.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するた
め、この発明は、多結晶半導体膜の製造方法にあたり、
高融点材料基板上に多孔体膜を形成した後、該多孔体膜
上に、高温熱処理によって多結晶半導体膜を形成して転
写母材を作成する。さらに、前記多結晶半導体膜が、被
転写基板に当接するよう前記転写母材を配置し、エッチ
ング処理によって前記転写母材から前記多孔体膜を選択
除去して前記被転写基板上に前記多結晶半導体膜を残
し、被転写基板上に多結晶半導体膜を得ることを特徴と
する。In order to achieve the above object, the present invention relates to a method of manufacturing a polycrystalline semiconductor film,
After a porous film is formed on a high melting point material substrate, a polycrystalline semiconductor film is formed on the porous film by high-temperature heat treatment to prepare a transfer base material. Further, the transfer base material is arranged so that the polycrystalline semiconductor film is in contact with the transferred substrate, and the porous film is selectively removed from the transfer base material by an etching process to form the polycrystalline semiconductor film on the transferred substrate. The method is characterized in that a polycrystalline semiconductor film is obtained on a substrate to be transferred while leaving a semiconductor film.
【０００９】また、本発明において、上記多孔体膜は、
前記エッチング処理において用いられる例えばフッ素系
のエッチング材に対して少なくとも前記被転写基板より
もエッチング性の高いシリカ系多孔体膜であることを特
徴とする。In the present invention, the porous membrane may be
For example, it is a silica-based porous film having a higher etching property with respect to a fluorine-based etching material used in the etching process than at least the transfer-receiving substrate.
【００１０】このような多孔体膜、特にシリカ系多孔体
膜は、例えば膜内のみにｎｍサイズの細孔が並んだ多孔
体として実現でき、多孔体でありながら、その膜表面に
は孔がなく膜の平坦性に優れる。[0010] Such a porous membrane, particularly a silica-based porous membrane, can be realized, for example, as a porous body in which pores of nm size are arranged only in the membrane. And excellent in film flatness.
【００１１】より具体的には、前記多孔体膜は、シリカ
材料膜内のみに、界面活性剤のミセル体に起因して形成
された複数の細孔を備える。More specifically, the porous membrane has a plurality of pores formed only in the silica material membrane due to the micelle body of the surfactant.
【００１２】この多孔体膜は、原材料が耐高温性に優れ
たシリカ（ＳｉＯ2）であり、また多孔体構造が高温で
も維持され、かつ各孔は膜内に緻密に並んだｎｍサイズ
の細孔である。従って、多孔体でない一般のＳｉＯ2と
比較してその熱伝導性が低い。従って、高融点材料基板
である例えば高融点ガラスや、石英基板など、ＳｉＯ2
材料の上に非晶質半導体膜（又は低多結晶半導体膜）を
形成した場合と比較しても、高温熱処理時、非晶質半導
体膜に効率的に熱を加えることが可能となる。即ち、こ
の多孔体膜の存在により、高温熱処理によって非晶質半
導体膜を多結晶化する際、効率的に結晶性の良い多結晶
半導体膜を高融点材料基板上に形成することができる。The porous film is made of silica (SiO 2 ) having a high temperature resistance as a raw material, has a porous structure maintained even at a high temperature, and has fine pores of nm size in which the pores are densely arranged in the film. Hole. Therefore, its thermal conductivity is lower than that of general SiO 2 which is not a porous body. Thus, for example, high melting point glass which is a refractory material substrate, a quartz substrate or the like, SiO 2
In comparison with the case where an amorphous semiconductor film (or a low polycrystalline semiconductor film) is formed on a material, heat can be efficiently applied to the amorphous semiconductor film during high-temperature heat treatment. That is, due to the presence of the porous film, when the amorphous semiconductor film is polycrystallized by high-temperature heat treatment, a polycrystalline semiconductor film having good crystallinity can be efficiently formed on the high melting point material substrate.
【００１３】更に、この多孔体膜は、その多孔体構造が
ゆえに、例えばエッチング処理において用いられるフッ
素系エッチング材に対し、被転写基板や高融点材料基板
としてシリカ系を用いたとしても、これらの基板よりも
エッチング性が高い。従って、容易かつ短時間で目的と
する母材から多結晶半導体膜を剥離して被転写基板へと
転写することが可能となる。このため、被転写基板とし
て例えばガラス等の低融点材料基板を用いた場合にも、
その低融点材料基板上に、高温熱処理によって得た多結
晶半導体膜を得ることが可能となる。Further, since the porous film has a porous structure, even if a silica-based material is used as a substrate to be transferred or a high-melting-point material substrate, for example, a fluorine-based etching material used in an etching process is used. Etching is higher than substrate. Therefore, the polycrystalline semiconductor film can be easily and quickly separated from the target base material and transferred to the transfer target substrate. Therefore, even when a low-melting-point material substrate such as glass is used as the substrate to be transferred,
A polycrystalline semiconductor film obtained by high-temperature heat treatment can be obtained on the low-melting-point material substrate.
【００１４】[0014]
【発明の実施の形態】以下、図面を用いてこの発明の好
適な実施の形態（以下実施形態という）について説明す
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention (hereinafter, referred to as embodiments) will be described below with reference to the drawings.
【００１５】図１は、この発明の実施形態に係る多結晶
半導体膜の製造方法を示している。FIG. 1 shows a method for manufacturing a polycrystalline semiconductor film according to an embodiment of the present invention.
【００１６】まず、高融点材料基板として石英基板１０
を用い、この石英基板１０の表面に多孔体膜として、シ
リカ系多孔体膜１２であるＦＳＭ（Folded Silica Meth
oporous material）膜を形成する。具体的には、基板１
０の表面にＦＳＭ材料をスピンコートにて例えば３０ｎ
ｍ程度の厚さに成膜する（図１（ａ））。次に、成膜し
たＦＳＭ膜１２を安定化するために該ＦＳＭ膜１２に熱
処理を施す。その結果、膜内には膜平面方向に沿った直
径２ｎｍ程度のパイプ状多孔体（但し、各孔の形状は、
必ずしもパイプ状であることには限定されない。）が形
成される。熱処理は、例えば１００℃〜５００℃程度の
温度範囲が好適である。なお上記ＦＳＭ材料はスピンコ
ートに限らずティップコートにより基板１０の表面に形
成してもよい。First, a quartz substrate 10 is used as a high melting point material substrate.
And a FSM (Folded Silica Meth), which is a silica-based porous film 12, on the surface of the quartz substrate 10 as a porous film.
oporous material) to form a film. Specifically, the substrate 1
FSM material is spin-coated on the surface of
A film is formed to a thickness of about m (FIG. 1A). Next, heat treatment is performed on the FSM film 12 to stabilize the formed FSM film 12. As a result, a pipe-like porous body having a diameter of about 2 nm along the membrane plane direction (however, the shape of each hole is
It is not necessarily limited to a pipe shape. ) Is formed. The temperature range of the heat treatment is preferably, for example, about 100 ° C. to 500 ° C. The FSM material may be formed on the surface of the substrate 10 by not only spin coating but also tip coating.
【００１７】シリカ系多孔体膜１２は、特開平１０−１
９４７２０号公報や特開平１０−１３００１３号公報に
おいて本出願人が提案するように、例えばアルコキシシ
ランなどのシリカ材料と界面活性剤とを混合させて得た
複合体を原材料とし、界面活性剤が集合して形成された
ミセル構造を細孔の鋳型として得られる複数の細孔が膜
内に形成されてできたものである。本発明において、こ
のシリカ系多孔体膜１２は、シリカ材料と界面活性剤か
らなる複合体を基板１０上に形成し、その後に施す熱処
理（乾燥・焼成）によって界面活性剤が除去されること
で、ミセル存在部分に細孔を形成して得ている。なお、
シリカ材料中に分散するミセルは、材料膜表面には存在
し難いため、このミセルを鋳型とした細孔は、シリカ系
多孔体膜１２の膜表面には形成されず、また、多孔体膜
１２の膜表面は非常に平坦性が良い。The silica-based porous membrane 12 is disclosed in JP-A-10-1
As proposed by the present applicant in Japanese Patent No. 94720 and JP-A-10-130013, a complex obtained by mixing a silica material such as alkoxysilane and a surfactant is used as a raw material, and the surfactant is aggregated. A plurality of pores obtained by using the micelle structure thus formed as a template for the pores are formed in the membrane. In the present invention, the silica-based porous film 12 is obtained by forming a composite comprising a silica material and a surfactant on the substrate 10 and removing the surfactant by a subsequent heat treatment (drying / firing). The pores are formed in the micelle-existing portion. In addition,
Since the micelles dispersed in the silica material hardly exist on the surface of the material film, pores using the micelles as a template are not formed on the surface of the silica-based porous film 12. Has a very good flatness.
【００１８】次に、このようにして得られたシリカ系多
孔体膜１２の上に、ＣＶＤ（Chemical Vapor Depositio
n：化学気相成長）又はスパッタ法などで、非晶質又は
多結晶（低多結晶状態）のシリコン膜１４を成膜する。
続いて、６００℃〜９００℃程度の高温熱処理を施し、
形成した非晶質又は多結晶のシリコン膜１４を多結晶化
し更に結晶粒サイズを均一に成長させ、大きくサイズの
揃った結晶粒を有する多結晶シリコン膜１６を形成し、
石英基板１０／シリカ系多孔体膜１２／多結晶シリコン
膜１６から構成される転写母材を得る（図１（ｂ））。Next, a CVD (Chemical Vapor Depositio) is deposited on the silica-based porous film 12 thus obtained.
n: An amorphous or polycrystalline (low polycrystalline state) silicon film 14 is formed by a chemical vapor deposition method or a sputtering method.
Subsequently, a high-temperature heat treatment of about 600 ° C. to 900 ° C. is performed,
The formed amorphous or polycrystalline silicon film 14 is polycrystallized, and the crystal grain size is further grown uniformly to form a polycrystalline silicon film 16 having crystal grains with large uniform sizes.
A transfer base material composed of the quartz substrate 10, the silica-based porous film 12, and the polycrystalline silicon film 16 is obtained (FIG. 1B).
【００１９】形成した転写母材は、次に、図１（ｃ）に
示すように、被転写基板に転写対象である多結晶シリコ
ン膜１６が当接するように配置される。ここでは、被転
写基板は、低融点材料である安価なガラス基板２０であ
り、このガラス基板２０の表面に多結晶シリコン膜１６
が当接するよう転写母材を配置する。更に、実際には、
ガラス基板２０と多結晶シリコン膜１６の親和性を高め
るため、転写母材側の多結晶シリコン膜１６の表面及び
ガラス基板２０の表面をキャロス洗浄（Ｈ2ＳＯ4：Ｈ2
Ｏ2＝５：２）等によって親水性としてから、ガラス基
板２０の表面に多結晶シリコン膜１６が当接するよう母
材を配置する。Next, as shown in FIG. 1C, the formed transfer base material is arranged such that the polycrystalline silicon film 16 to be transferred comes into contact with the transfer target substrate. Here, the substrate to be transferred is an inexpensive glass substrate 20 made of a low melting point material, and a polycrystalline silicon film 16 is formed on the surface of the glass substrate 20.
The transfer base material is arranged so that the transfer base material contacts. Furthermore, in practice,
In order to enhance the affinity between the glass substrate 20 and the polycrystalline silicon film 16, the surface of the polycrystalline silicon film 16 on the transfer base material side and the surface of the glass substrate 20 are subjected to Carros cleaning (H 2 SO 4 : H 2).
After the surface is made hydrophilic by O 2 = 5: 2) or the like, a base material is arranged so that the polycrystalline silicon film 16 contacts the surface of the glass substrate 20.
【００２０】このように多結晶シリコン膜１６と被転写
基板であるガラス基板２０とを当接させただけの状態で
は、多結晶シリコン膜１６とガラス基板２０とが分子間
力のみの弱い力で接合しているだけである。よってその
接合を強固なものとする必要があり、そのためは更に熱
処理を施すことが好適である。熱処理温度は１００℃〜
５００℃程度である。なお、転写母材の多結晶シリコン
膜１６をガラス基板２０に接着するにあたり、ガラスが
６００℃程度で収縮などによる変形を起こすため、上記
熱処理については６００℃以下で行うことが必要であ
る。また、以上ではガラス基板２０と多結晶シリコン膜
１６とを直接接合する方法を採用しているが、後の工程
で用いられるエッチング液であるフッ酸に対して耐性の
ある接着材を用いてガラス基板２０に転写母材の多結晶
シリコン膜１６を接着しても良い。In the state where the polycrystalline silicon film 16 and the glass substrate 20, which is the substrate to be transferred, are simply brought into contact with each other, the polycrystalline silicon film 16 and the glass substrate 20 are connected by a weak force of only the intermolecular force. They are just joining. Therefore, it is necessary to strengthen the bonding, and it is preferable to further perform a heat treatment. Heat treatment temperature is 100 ° C ~
It is about 500 ° C. In bonding the polycrystalline silicon film 16 of the transfer base material to the glass substrate 20, the glass is deformed at about 600 ° C. due to shrinkage or the like. Therefore, the heat treatment needs to be performed at 600 ° C. or lower. Further, in the above, a method of directly bonding the glass substrate 20 and the polycrystalline silicon film 16 is adopted. However, the glass substrate 20 is formed using an adhesive material which is resistant to hydrofluoric acid which is an etchant used in a later step. The polycrystalline silicon film 16 serving as a transfer base material may be bonded to the substrate 20.
【００２１】転写母材をガラス基板２０に接合・接着し
た後、母材とガラス基板を接着させたままエッチング液
であるフッ酸溶液中に浸す。この際、母材の石英基板１
０と、ガラス基板２０もフッ酸によりエッチングされる
が、ＦＳＭ膜からなる多孔体膜１２はその多孔体構造が
ゆえに、優先的にエッチングが進む。つまり、ガラス基
板２０及び石英基板１０、特にガラス基板２０よりも早
くエッチングが進む。従って、多孔体膜１２がエッチン
グされ、図１（ｄ）に示すように多結晶シリコン膜１６
が母材の石英基板側から剥離されてガラス基板２０側に
残る。これにより、ガラス基板２０上に、高温熱処理を
施すことで膜質の向上した多結晶シリコン膜１６が形成
されることとなる。なお、フッ酸エッチング処理の際、
石英基板１０及びガラス基板２０の側面や裏面には耐フ
ッ酸性膜、例えば窒化膜をコートしておくことで、より
確実に、特にガラス基板２０に損傷なくその表面に多結
晶シリコン膜１６を転写することが可能となる。After joining and bonding the transfer base material to the glass substrate 20, the base material and the glass substrate are immersed in a hydrofluoric acid solution as an etchant while the base material and the glass substrate are bonded. At this time, the base material quartz substrate 1
0, the glass substrate 20 is also etched by hydrofluoric acid, but the porous film 12 made of the FSM film is preferentially etched due to its porous structure. That is, the etching proceeds faster than the glass substrate 20 and the quartz substrate 10, particularly, the glass substrate 20. Therefore, the porous film 12 is etched, and as shown in FIG.
Is separated from the quartz substrate side of the base material and remains on the glass substrate 20 side. As a result, the polycrystalline silicon film 16 having improved film quality is formed on the glass substrate 20 by performing the high-temperature heat treatment. During the hydrofluoric acid etching process,
By coating a hydrofluoric acid-resistant film, for example, a nitride film on the side surfaces and the back surface of the quartz substrate 10 and the glass substrate 20, the polycrystalline silicon film 16 is more reliably transferred to the surface without damaging the glass substrate 20 in particular. It is possible to do.
【００２２】[0022]
【発明の効果】以上説明したように、この発明において
は、高温熱処理によってでなければ実現できない大きく
かつ均一な結晶粒サイズの多結晶半導体膜、例えば多結
晶シリコン膜を、被転写基板、例えばガラス基板などの
低融点材料基板上に転写することができる。つまり、被
転写基板には熱処理による歪みなどの損傷を与えること
なく、最終的に被転写基板上に多結晶半導体膜を形成す
ることが可能となる。As described above, according to the present invention, a polycrystalline semiconductor film having a large and uniform crystal grain size, such as a polycrystalline silicon film, which can be realized only by a high-temperature heat treatment, is transferred to a substrate to be transferred, such as glass. It can be transferred onto a low melting point material substrate such as a substrate. In other words, the polycrystalline semiconductor film can be finally formed on the transferred substrate without damaging the transferred substrate such as distortion due to the heat treatment.
【図１】 本発明の実施形態に係る多結晶シリコン膜の
ガラス基板への形成方法を説明する図である。FIG. 1 is a diagram illustrating a method for forming a polycrystalline silicon film on a glass substrate according to an embodiment of the present invention.
【図２】 従来のガラス基板上への多結晶シリコン膜の
形成方法を示す図である。FIG. 2 is a view showing a conventional method for forming a polycrystalline silicon film on a glass substrate.
１０ 石英基板（高融点材料基板）、１２ シリカ系多
孔体膜（ＦＳＭ膜）、１４ 非晶質又は多結晶（低多結
晶）のシリコン膜、１６ 多結晶シリコン膜、２０ ガ
ラス基板（被転写基板、低融点材料基板）。10 quartz substrate (high melting point material substrate), 12 silica-based porous film (FSM film), 14 amorphous or polycrystalline (low polycrystalline) silicon film, 16 polycrystalline silicon film, 20 glass substrate (transferred substrate) , Low melting point material substrate).
Claims (3)
後、該多孔体膜上に、高温熱処理により多結晶半導体膜
を形成して転写母材を作成し、 前記多結晶半導体膜が被転写基板に当接するよう前記転
写母材を配置し、 エッチング処理によって前記転写母材から前記多孔体膜
を選択的に除去して前記被転写基板上に前記多結晶半導
体膜を残し、被転写基板上に多結晶半導体膜を得ること
を特徴とする多結晶半導体膜の製造方法。After a porous film is formed on a high melting point material substrate, a polycrystalline semiconductor film is formed on the porous film by high-temperature heat treatment to form a transfer base material. Disposing the transfer base material so as to be in contact with the transfer target substrate; and selectively removing the porous film from the transfer base material by etching to leave the polycrystalline semiconductor film on the transfer target substrate. A method for manufacturing a polycrystalline semiconductor film, comprising obtaining a polycrystalline semiconductor film on a substrate.
方法において、 前記多孔体膜は、前記エッチング処理において用いられ
るエッチング材に対して少なくとも前記被転写基板より
もエッチング性の高いシリカ系多孔体膜であることを特
徴とする多結晶半導体膜の製造方法。2. The method for manufacturing a polycrystalline semiconductor film according to claim 1, wherein the porous film is a silica-based material having a higher etching property with respect to an etching material used in the etching process than at least the substrate to be transferred. A method for producing a polycrystalline semiconductor film, which is a porous film.
導体膜の製造方法において、 前記多孔体膜は、シリカ材料膜内のみに界面活性剤のミ
セル体に起因して形成された複数の細孔を備えているこ
とを特徴とする多結晶半導体膜の製造方法。3. The method for manufacturing a polycrystalline semiconductor film according to claim 1, wherein the porous film is formed only in a silica material film due to a micelle body of a surfactant. A method for producing a polycrystalline semiconductor film, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30086899A JP2001119003A (en) | 1999-10-22 | 1999-10-22 | Method for manufacturing polycrystalline semiconductor film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30086899A JP2001119003A (en) | 1999-10-22 | 1999-10-22 | Method for manufacturing polycrystalline semiconductor film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001119003A true JP2001119003A (en) | 2001-04-27 |
Family
ID=17890086
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30086899A Pending JP2001119003A (en) | 1999-10-22 | 1999-10-22 | Method for manufacturing polycrystalline semiconductor film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001119003A (en) |
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