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JP2001118969A - Molding material for sealing, its manufacturing method, and electronic part device - Google Patents

Molding material for sealing, its manufacturing method, and electronic part device

Info

Publication number
JP2001118969A
JP2001118969A JP30132899A JP30132899A JP2001118969A JP 2001118969 A JP2001118969 A JP 2001118969A JP 30132899 A JP30132899 A JP 30132899A JP 30132899 A JP30132899 A JP 30132899A JP 2001118969 A JP2001118969 A JP 2001118969A
Authority
JP
Japan
Prior art keywords
sealing
molding material
epoxy resin
molding
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP30132899A
Other languages
Japanese (ja)
Inventor
Tatsuo Kawada
達男 河田
Hiroyuki Saii
裕行 洒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP30132899A priority Critical patent/JP2001118969A/en
Publication of JP2001118969A publication Critical patent/JP2001118969A/en
Pending legal-status Critical Current

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  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a molding material for sealing which is high in adhesion to an insert and excellent in reflow cracking resistance, moisture resistance, and reliability, easily packed for shipping, and easily controlled in moisture absorption, in a process where an electronic device such as a semiconductor device is manufactured, a method of manufacturing the same, and an electronic part device equipped with an element sealed up with the same. SOLUTION: A molding material for sealing is composed of integral components such as an epoxy resin, a hardening agent, and a filler. All the components are heated, kneaded, then cooled down, and subjected to aging and/or heating/kneading for the formation of a molding material for sealing. A method of manufacturing the molding material for sealing and an electronic part device equipped with an element sealed up with the above molding material for sealing are provided.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、封止用成形材料、
その製造方法、及び封止用成形材料で封止した素子を備
えた電子部品装置に関する。
TECHNICAL FIELD The present invention relates to a molding compound for sealing,
The present invention relates to a manufacturing method thereof and an electronic component device including an element sealed with a sealing molding material.

【0002】[0002]

【従来の技術】近年、電子部品素子の高密度実装化が進
んでいる。これに伴い、電子部品装置は従来のピン挿入
型のパッケージから表面実装型のパッケージが主流にな
っている。表面実装型のIC、LSI等は、実装密度を
高くし、実装高さを低くするために薄型、小型のパッケ
ージになっており、素子のパッケージに対する占有面積
が大きくなり、パッケージの肉厚は非常に薄くなってき
た。さらにこれらのパッケージは従来のピン挿入型のも
のと実装方法が異なっている。すなわち、ピン挿入型パ
ッケージはピンを配線板に挿入した後、配線板裏面から
はんだ付けを行うため、パッケージが直接高温にさらさ
れることがなかった。しかし表面実装型ICは配線板表
面に仮止めを行い、はんだバスやリフロー装置などで処
理されるため、直接はんだ付け温度(リフロー温度)に
さらされる。この結果、ICパッケージが吸湿した場
合、すなわち封止用成形材料が含水していた場合、リフ
ロー時にこの吸湿水分が気化して、発生した蒸気圧が剥
離応力として働き、素子、リードフレーム等のインサー
ト品と封止用成形材料との間で剥離が発生し、パッケー
ジクラックや半田付け不良の原因となる。現在、この現
象が表面実装型の電子部品装置に係わる大きな問題とな
っている。従来から、トランジスタ、IC等の電子部品
装置の素子封止の分野では生産性、コスト等の面から樹
脂封止が主流となり、封止用成形材料としてエポキシ樹
脂成形材料が広く用いられている。この理由としては、
エポキシ樹脂が作業性、成形性、電気特性、耐湿性、耐
熱性、機械特性、インサート品との接着性等の諸特性に
バランスがとれているためである。
2. Description of the Related Art In recent years, high-density mounting of electronic component elements has been advanced. Along with this trend, electronic component devices have become mainstream from conventional pin insertion type packages to surface mount type packages. Surface mount type ICs, LSIs, etc. are thin and small packages in order to increase the packaging density and reduce the mounting height, so that the area occupied by the elements in the package increases, and the thickness of the package becomes extremely large. It is getting thinner. Further, these packages are different in mounting method from the conventional pin insertion type. That is, in the pin insertion type package, the pins are inserted into the wiring board and then soldered from the back surface of the wiring board, so that the package is not directly exposed to a high temperature. However, since the surface mount IC is temporarily fixed to the surface of the wiring board and processed by a solder bath or a reflow device, it is directly exposed to a soldering temperature (reflow temperature). As a result, when the IC package absorbs moisture, that is, when the molding material for sealing contains water, the absorbed moisture evaporates during reflow, and the generated vapor pressure acts as a peeling stress, and inserts such as elements and lead frames. Peeling occurs between the product and the molding compound for sealing, which causes package cracks and poor soldering. At present, this phenomenon is a major problem relating to surface mount type electronic component devices. 2. Description of the Related Art Conventionally, in the field of element sealing of electronic component devices such as transistors and ICs, resin sealing has been the mainstream in terms of productivity, cost, and the like, and epoxy resin molding materials have been widely used as sealing molding materials. This is because
This is because the epoxy resin is well balanced in various properties such as workability, moldability, electrical properties, moisture resistance, heat resistance, mechanical properties, and adhesiveness to an insert product.

【0003】[0003]

【発明が解決しようとする課題】しかし、エポキシ樹
脂、硬化剤、充填剤等の配合成分を加熱混練する一般的
手法によって製造した封止用成形材料では、インサート
品との密着力が十分ではなく、上記問題点を解決するに
は至っていない。そこで、現行の封止用成形材料で封止
した電子部品装置では、防湿梱包して出荷したり、配線
板へ実装する前に予めを十分乾燥して使用するなどの対
策がとられているが、これらの方法は手間がかかり、コ
ストも高くなる。本発明はかかる状況に鑑みなされたも
ので、インサート品との密着性が高く、耐リフロークラ
ック性、耐湿性などの信頼性に優れ、その出荷時の梱包
や、半導体装置等の電子部品装置の製造工程での吸湿管
理等も簡便な、封止用エポキシ樹脂成形材料、その製造
方法及びこの封止用成形材料により封止した素子を備え
た電子部品装置を提供しようとするものである。
However, a sealing molding material produced by a general method of heating and kneading components such as an epoxy resin, a curing agent, and a filler has insufficient adhesion to an insert product. However, the above problems have not been solved. Therefore, in electronic component devices sealed with the current sealing molding material, measures such as moisture-proof packing and shipping, or sufficient drying before use before mounting on a wiring board are taken. However, these methods are troublesome and costly. The present invention has been made in view of such a situation, and has high adhesiveness to an insert product, excellent reflow crack resistance, excellent reliability such as moisture resistance, packing at the time of shipment, and electronic component devices such as semiconductor devices. An object of the present invention is to provide an epoxy resin molding material for encapsulation, a method for producing the same, and an electronic component device equipped with an element encapsulated with the encapsulating molding material, which also facilitates the management of moisture absorption in the production process.

【0004】[0004]

【課題を解決するための手段】本発明者らは上記の課題
を解決するために鋭意検討を重ねた結果、エポキシ樹
脂、硬化剤、充填剤等の配合成分を加熱混練後冷却し、
さらにエージング処理及び/又は加熱混練を行う方法に
よって製造した封止用成形材料により、上記の目的を達
成し得ることを見い出し、本発明を完成するに至った。
Means for Solving the Problems The inventors of the present invention have conducted intensive studies to solve the above-mentioned problems, and as a result, kneaded components such as an epoxy resin, a curing agent, and a filler, and then cooled them.
Furthermore, it has been found that the above object can be achieved by a sealing molding material produced by a method of performing aging treatment and / or heat kneading, and the present invention has been completed.

【0005】すなわち、本発明は、(1)エポキシ樹
脂、硬化剤、及び充填剤を必須成分とし、全配合成分を
加熱混練後冷却し、さらにエージング処理及び/又は加
熱混練してなる封止用成形材料、及び(2)エポキシ樹
脂、硬化剤、及び充填剤を必須成分とする配合成分を加
熱混練後冷却し、さらにエージング処理及び/又は加熱
混練することを特徴とする上記(1)記載の封止用成形
材料の製造方法、並びに(3)上記(1)記載の封止用
成形材料により封止された素子を備えた電子部品装置に
関する。
[0005] That is, the present invention provides (1) a sealing composition comprising essential components of an epoxy resin, a curing agent, and a filler, followed by heating, kneading and cooling all the components, followed by aging treatment and / or heat kneading. (1) The molding material according to the above (1), wherein the molding material and (2) a compounding component having an epoxy resin, a curing agent, and a filler as essential components are heated and kneaded, then cooled, and further subjected to an aging treatment and / or a heat kneading. The present invention relates to a method for producing a molding material for sealing, and (3) an electronic component device including an element sealed with the molding material for sealing described in (1) above.

【0006】[0006]

【発明の実施の形態】本発明の封止用成形材料は、必須
成分としてエポキシ樹脂、硬化剤及び充填剤を含むもの
である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The molding material for sealing of the present invention contains an epoxy resin, a curing agent and a filler as essential components.

【0007】本発明において用いられるエポキシ樹脂
は、封止用成形材料に一般に使用されているもので特に
制限はないが、例えば、フェノールノボラック型エポキ
シ樹脂、オルソクレゾールノボラック型エポキシ樹脂を
はじめとするフェノール、クレゾール、キシレノール、
レゾルシン、カテコール、ビスフェノールA、ビスフェ
ノールF等のフェノール類及び/又はα−ナフトール、
β−ナフトール、ジヒドロキシナフタレン等のナフトー
ル類とホルムアルデヒド、アセトアルデヒド、プロピオ
ンアルデヒド、ベンズアルデヒド、サリチルアルデヒド
等のアルデヒド基を有する化合物とを酸性触媒下で縮合
又は共縮合させて得られるノボラック樹脂をエポキシ化
したもの、ビスフェノールA、ビスフェノールF、ビス
フェノールS、アルキル置換又は非置換のビフェノール
等のジグリシジルエーテル、スチルベン型ジグリシジル
エーテル、フェノール・アラルキル樹脂、ナフトール・
アラルキル樹脂をエポキシ化したもの、フェノール類と
ジシクロペンタジエンやテルペン類との付加物または重
付加物をエポキシ化したもの、フタル酸、ダイマー酸等
の多塩基酸とエピクロルヒドリンの反応により得られる
グリシジルエステル型エポキシ樹脂、ジアミノジフェニ
ルメタン、イソシアヌル酸等のポリアミンとエピクロル
ヒドリンの反応により得られるグリシジルアミン型エポ
キシ樹脂、トリメチロールプロパン型エポキシ樹脂、ナ
フタレン環を有するエポキシ樹脂、オレフィン結合を過
酢酸等の過酸で酸化して得られる線状脂肪族エポキシ樹
脂、及び脂環族エポキシ樹脂などが挙げられ、これらを
単独で用いても2種以上を組み合わせて用いてもよい。
中でも耐リフロークラック性の観点からは、4,4’−
ビス(2,3−エポキシプロポキシ)−3,3’,5,
5’−テトラメチルビフェニル、4,4’−ビス(2,
3−エポキシプロポキシ)ビフェニル等を主成分とする
ビフェニル型エポキシ樹脂が好ましい。このビフェニル
型エポキシ樹脂を使用する場合、その配合量はエポキシ
樹脂全量に対し60重量%以上とすることが好ましい。
60重量%未満では当該エポキシ樹脂の低吸湿性、高接
着性の特長が発揮されにくく、耐リフロークラック性に
対して効果が小さくなる傾向がある。
[0007] The epoxy resin used in the present invention is generally used for molding materials for encapsulation and is not particularly limited. For example, phenols such as phenol novolak epoxy resins and orthocresol novolak epoxy resins , Cresol, xylenol,
Phenols such as resorcin, catechol, bisphenol A, bisphenol F and / or α-naphthol;
Epoxidized novolak resin obtained by condensing or co-condensing naphthols such as β-naphthol and dihydroxynaphthalene with compounds having an aldehyde group such as formaldehyde, acetaldehyde, propionaldehyde, benzaldehyde and salicylaldehyde under an acidic catalyst. Diglycidyl ethers such as bisphenol A, bisphenol F, bisphenol S, alkyl-substituted or unsubstituted biphenol, stilbene-type diglycidyl ether, phenol aralkyl resin, naphthol
Epoxidized aralkyl resins, epoxidized adducts or polyadducts of phenols with dicyclopentadiene or terpenes, glycidyl esters obtained by the reaction of epichlorohydrin with polybasic acids such as phthalic acid and dimer acid -Type epoxy resin, glycidylamine-type epoxy resin obtained by reaction of polyamine such as diaminodiphenylmethane, isocyanuric acid and epichlorohydrin, trimethylolpropane-type epoxy resin, epoxy resin having naphthalene ring, olefin bond is oxidized with peracid such as peracetic acid Examples thereof include a linear aliphatic epoxy resin, an alicyclic epoxy resin, and the like, which may be used alone or in combination of two or more.
Among them, from the viewpoint of reflow crack resistance, 4,4′-
Bis (2,3-epoxypropoxy) -3,3 ', 5
5′-tetramethylbiphenyl, 4,4′-bis (2,
A biphenyl-type epoxy resin containing 3-epoxypropoxy) biphenyl or the like as a main component is preferable. When this biphenyl-type epoxy resin is used, its blending amount is preferably at least 60% by weight based on the total amount of the epoxy resin.
If the content is less than 60% by weight, the epoxy resin is less likely to exhibit low moisture absorption and high adhesiveness, and the effect on reflow crack resistance tends to be small.

【0008】本発明において用いられる硬化剤は、封止
用樹脂成形材料に一般に使用されているもので特に制限
はないが、例えば、フェノール、クレゾール、レゾルシ
ン、カテコール、ビスフェノールA、ビスフェノール
F、フェニルフェノール、アミノフェノール等のフェノ
ール類及び/又はα−ナフトール、β−ナフトール、ジ
ヒドロキシナフタレン等のナフトール類とホルムアルデ
ヒド等のアルデヒド基を有する化合物とを酸性触媒下で
縮合又は共縮合させて得られる樹脂、フェノール類及び
/又はナフトール類とジメトキシパラキシレンやビス
(メトキシメチル)ビフェニルから合成されるフェノー
ル・アラルキル樹脂、ナフトール・アラルキル樹脂など
が挙げられ、これらを単独で用いても2種類以上を組み
合わせて用いてもよい。中でも耐リフロークラック性の
観点からは、フェノール・アラルキル樹脂が好ましく、
具体例としては、p−キシリレン型ザイロック、m−キ
シリレン型ザイロック等が挙げられる。このフェノール
・アラルキル樹脂を用いる場合、その配合量は、その性
能を発揮するために硬化剤全量に対して60重量%以上
とすることが好ましい。
[0008] The curing agent used in the present invention is not particularly limited, and is generally used in resin molding materials for sealing. Examples thereof include phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, and phenylphenol. And phenols such as aminophenol and / or naphthols such as α-naphthol, β-naphthol and dihydroxynaphthalene and a compound having an aldehyde group such as formaldehyde in the presence of an acidic catalyst in the form of a resin or phenol. Aralkyl resins, naphthol aralkyl resins, etc. synthesized from phenols and / or naphthols and dimethoxyparaxylene or bis (methoxymethyl) biphenyl. These may be used alone or in combination of two or more. Is also good. Among them, from the viewpoint of reflow crack resistance, phenol-aralkyl resin is preferable,
Specific examples include p-xylylene-type ziloc, m-xylylene-type ziloc, and the like. When this phenol / aralkyl resin is used, its blending amount is preferably 60% by weight or more based on the total amount of the curing agent in order to exhibit its performance.

【0009】エポキシ樹脂と硬化剤との当量比、すなわ
ち、エポキシ樹脂中のエポキシ基数/硬化剤中の水酸基
数の比は、特に制限はないが、それぞれの未反応分を少
なく抑えるために0.5〜2の範囲に設定されることが
好ましく、0.7〜1.3がより好ましい。耐リフロー
クラック性に優れる封止用成形材料を得るためには、こ
の比を0.8〜1.2の範囲に設定することがさらに好
ましい。
The equivalent ratio of the epoxy resin to the curing agent, that is, the ratio of the number of epoxy groups in the epoxy resin / the number of hydroxyl groups in the curing agent is not particularly limited, but is preferably set at 0. It is preferably set in the range of 5 to 2, more preferably 0.7 to 1.3. In order to obtain a molding compound for sealing having excellent reflow crack resistance, it is more preferable to set this ratio in the range of 0.8 to 1.2.

【0010】本発明において用いられる充填剤は、吸湿
性、線膨張係数低減、熱伝導性向上及び強度向上のため
に封止用成形材料に配合されるものであり、無機充填剤
が好ましい。無機充填剤としては、例えば、溶融シリ
カ、結晶シリカ、アルミナ、ジルコン、珪酸カルシウ
ム、炭酸カルシウム、チタン酸カリウム、炭化珪素、窒
化珪素、窒化アルミ、窒化ホウ素、ベリリア、ジルコニ
ア、ジルコン、フォステライト、ステアタイト、スピネ
ル、ムライト、チタニア等の粉体、又はこれらを球形化
したビーズ、ガラス繊維などが挙げられる。さらに、難
燃効果のある無機充填剤としては水酸化アルミニウム、
水酸化マグネシウム、硼酸亜鉛、モリブデン酸亜鉛等が
挙げられる。これらの充填剤は単独で用いても2種類以
上を組み合わせて用いてもよい。上記の充填剤の中で、
線膨張係数低減の観点からは溶融シリカが、高熱伝導性
の観点からはアルミナが好ましく、充填剤の粒子形状は
成形時の流動性及び金型摩耗性の観点から球形が好まし
い。充填剤の配合量は、難燃性の観点、耐リフロークラ
ック性、成形性、吸湿性、線膨張係数の低減及び強度向
上の観点から、封止用成形材料全体に対して70重量%
以上が好ましく、耐リフロークラック性及び流動性の観
点からは80〜95重量%の範囲がより好ましく、88
〜92重量%がさらに好ましい。
The filler used in the present invention is blended in a molding compound for sealing in order to reduce the hygroscopicity, the coefficient of linear expansion, improve the thermal conductivity and improve the strength, and an inorganic filler is preferred. Examples of the inorganic filler include fused silica, crystalline silica, alumina, zircon, calcium silicate, calcium carbonate, potassium titanate, silicon carbide, silicon nitride, aluminum nitride, boron nitride, beryllia, zirconia, zircon, fosterite, and steer. Examples include powders of tight, spinel, mullite, titania, etc., or spherical beads or glass fibers thereof. Further, as the inorganic filler having a flame retardant effect, aluminum hydroxide,
Examples include magnesium hydroxide, zinc borate, zinc molybdate and the like. These fillers may be used alone or in combination of two or more. Among the above fillers,
Fused silica is preferred from the viewpoint of reducing the coefficient of linear expansion, and alumina is preferred from the viewpoint of high thermal conductivity, and the particle shape of the filler is preferably spherical from the viewpoint of fluidity during molding and mold wear. From the viewpoint of flame retardancy, reflow crack resistance, moldability, hygroscopicity, reduction of linear expansion coefficient and improvement of strength, the amount of the filler is 70% by weight based on the entire molding material for sealing.
From the viewpoint of reflow crack resistance and fluidity, the range is more preferably from 80 to 95% by weight, and 88 is preferable.
~ 92% by weight is more preferred.

【0011】本発明の封止用成形材料には、必要に応じ
て硬化促進剤を配合することができる。硬化促進剤とし
ては、封止用成形材料に一般に使用されているもので特
に制限はないが、例えば、1,8−ジアザ−ビシクロ
[5.4.0]ウンデセン−7、1,5−ジアザ−ビシ
クロ[4.3.0]ノネン−5、6−ジブチルアミノ−
1,8−ジアザ−ビシクロ[5.4.0]ウンデセン−
7、6−n−ヘキシル−1,8−ジアザビシクロ[5.
4.0]ウンデセン−7等のシクロアミジン化合物及び
これらの化合物に無水マレイン酸、1,4−ベンゾキノ
ン、2,5−トルキノン、1,4−ナフトキノン、2,
3−ジメチルベンゾキノン、2,6−ジメチルベンゾキ
ノン、2,3−ジメトキシ−5−メチル−1,4−ベン
ゾキノン、2,3−ジメトキシ−1,4−ベンゾキノ
ン、フェニル−1,4−ベンゾキノン等のキノン化合
物、ジアゾフェニルメタン、フェノール樹脂等のπ結合
をもつ化合物を付加してなる分子内分極を有する化合
物、ベンジルジメチルアミン、トリエタノールアミン、
ジメチルアミノエタノール、トリス(ジメチルアミノメ
チル)フェノール等の3級アミン類及びこれらの誘導
体、2−メチルイミダゾール、2−フェニルイミダゾー
ル、2−フェニル−4−メチルイミダゾール等のイミダ
ゾール類及びこれらの誘導体、トリブチルホスフィン、
ジブチルフェニルホスフィン、ブチルジフェニルホスフ
ィン、エチルジフェニルホスフィン、メチルジフェニル
ホスフィン、トリフェニルホスフィン、トリス(4−メ
チルフェニル)ホスフィン、トリス(4−メトキシフェ
ニル)ホスフィン、トリス(2,6−ジメトキシフェニ
ル)ホスフィン、ジフェニルホスフィン、フェニルホス
フィン等の有機ホスフィン類及びこれらの有機ホスフィ
ン類に無水マレイン酸、上記キノン化合物、ジアゾフェ
ニルメタン、フェノール樹脂等のπ結合をもつ化合物を
付加してなる分子内分極を有するリン化合物、テトラフ
ェニルホスホニウムテトラフェニルボレート、トリフェ
ニルホスフィンテトラフェニルボレート、2−エチル−
4−メチルイミダゾールテトラフェニルボレート、N−
メチルモルホリンテトラフェニルボレート等のテトラフ
ェニルボロン塩及びこれらの誘導体などが挙げられ、中
でも成形性の観点から、有機ホスフィン類、シクロアミ
ジン化合物、またはこれらとキノン化合物との付加物が
好ましく、トリフェニルホスフィン、トリス(4−メチ
ルフェニル)ホスフィン、トリス(4−メトキシフェニ
ル)ホスフィン等の第三ホスフィンとp−ベンゾキノ
ン、1,4−ナフトキノン等のキノン化合物との付加物
がより好ましい。これらの硬化促進剤は、単独で用いて
も2種以上を組み合わせて用いてもよい。硬化促進剤の
配合量は、硬化促進効果が達成される量であれば特に限
定されるものではないが、封止用成形材料全体に対して
0.005〜2重量%が好ましく、より好ましくは0.
01〜1重量%、さらに好ましくは0.05〜0.5重
量%である。0.005重量%未満では短時間での硬化
性に劣る傾向があり、2重量%を超えると硬化速度が速
すぎて良好な成形品を得ることが困難になる傾向があ
る。
The sealing molding material of the present invention may contain a curing accelerator, if necessary. The curing accelerator is generally used in molding materials for sealing and is not particularly limited. Examples thereof include 1,8-diaza-bicyclo [5.4.0] undecene-7,1,5-diaza. -Bicyclo [4.3.0] nonene-5,6-dibutylamino-
1,8-diaza-bicyclo [5.4.0] undecene-
7,6-n-hexyl-1,8-diazabicyclo [5.
4.0] Cycloamidine compounds such as undecene-7 and the like, and maleic anhydride, 1,4-benzoquinone, 2,5-toluquinone, 1,4-naphthoquinone,
Quinones such as 3-dimethylbenzoquinone, 2,6-dimethylbenzoquinone, 2,3-dimethoxy-5-methyl-1,4-benzoquinone, 2,3-dimethoxy-1,4-benzoquinone and phenyl-1,4-benzoquinone Compound, diazophenylmethane, a compound having an intramolecular polarization obtained by adding a compound having a π bond such as a phenol resin, benzyldimethylamine, triethanolamine,
Tertiary amines such as dimethylaminoethanol and tris (dimethylaminomethyl) phenol and derivatives thereof, imidazoles such as 2-methylimidazole, 2-phenylimidazole and 2-phenyl-4-methylimidazole and derivatives thereof, tributyl Phosphine,
Dibutylphenylphosphine, butyldiphenylphosphine, ethyldiphenylphosphine, methyldiphenylphosphine, triphenylphosphine, tris (4-methylphenyl) phosphine, tris (4-methoxyphenyl) phosphine, tris (2,6-dimethoxyphenyl) phosphine, diphenyl Phosphine, organic phosphines such as phenylphosphine and phosphorus compounds having intramolecular polarization obtained by adding a compound having a π bond such as maleic anhydride, the above quinone compound, diazophenylmethane, and phenol resin to these organic phosphines, Tetraphenylphosphonium tetraphenylborate, triphenylphosphinetetraphenylborate, 2-ethyl-
4-methylimidazole tetraphenyl borate, N-
Examples include tetraphenylboron salts such as methylmorpholine tetraphenylborate and derivatives thereof. Among them, from the viewpoint of moldability, organic phosphines, cycloamidine compounds, or adducts thereof with quinone compounds are preferable, and triphenylphosphine is preferred. And adducts of tertiary phosphines such as tris (4-methylphenyl) phosphine and tris (4-methoxyphenyl) phosphine with quinone compounds such as p-benzoquinone and 1,4-naphthoquinone. These curing accelerators may be used alone or in combination of two or more. The amount of the curing accelerator is not particularly limited as long as the curing acceleration effect is achieved, but is preferably 0.005 to 2% by weight, more preferably 0.005 to 2% by weight, based on the entire molding material for sealing. 0.
The content is from 01 to 1% by weight, more preferably from 0.05 to 0.5% by weight. If it is less than 0.005% by weight, the curability in a short time tends to be inferior. If it exceeds 2% by weight, the curing rate tends to be too fast to obtain a good molded product.

【0012】本発明の封止用成形材料には、必要に応じ
て従来公知の難燃剤を配合することができる。例えば、
赤燐、リン酸エステル、メラミン、メラミン誘導体、ト
リアジン環を有する化合物、シアヌル酸誘導体、イソシ
アヌル酸誘導体等の窒素含有化合物、シクロホスファゼ
ン等の燐/窒素含有化合物、酸化亜鉛、酸化鉄、酸化モ
リブデン、フェロセン等の金属化合物、酸化アンチモ
ン、ブロム化樹脂などが挙げられ、これらを単独で用い
ても2種以上を組み合わせて用いてもよい。
[0012] The sealing molding material of the present invention may contain a conventionally known flame retardant, if necessary. For example,
Red phosphorus, phosphate ester, melamine, melamine derivative, compound having a triazine ring, nitrogen-containing compound such as cyanuric acid derivative, isocyanuric acid derivative, phosphorus / nitrogen-containing compound such as cyclophosphazene, zinc oxide, iron oxide, molybdenum oxide; Examples thereof include metal compounds such as ferrocene, antimony oxide, and brominated resins. These may be used alone or in combination of two or more.

【0013】また、本発明の封止用成形材料には、IC
等の半導体素子の耐湿性、高温放置特性を向上させる観
点から陰イオン交換体を配合することもできる。陰イオ
ン交換体としては特に制限はなく、従来公知のものを用
いることができるが、例えば、ハイドロタルサイト類
や、マグネシウム、アルミニウム、チタン、ジルコニウ
ム、ビスマスから選ばれる元素の含水酸化物等が挙げら
れ、これらを単独で又は2種類以上を組み合わせて用い
ることができる。
Further, the molding material for sealing of the present invention includes an IC
For example, an anion exchanger may be blended from the viewpoint of improving the moisture resistance and high-temperature storage characteristics of the semiconductor element. The anion exchanger is not particularly limited, and conventionally known ones can be used. Examples thereof include hydrotalcites, and hydrated oxides of elements selected from magnesium, aluminum, titanium, zirconium, and bismuth. These can be used alone or in combination of two or more.

【0014】さらに、本発明の封止用成形材料には、そ
の他の添加剤として、高級脂肪酸、高級脂肪酸金属塩、
エステル系ワックス、ポリオレフィン系ワックス、ポリ
エチレン、酸化ポリエチレン等の離型剤、染料、カーボ
ンブラック等の着色剤、エポキシシラン、アミノシラ
ン、ウレイドシラン、ビニルシラン、アルキルシラン、
有機チタネート、アルミニウムアルコレート等のカップ
リング剤、シリコーンオイルやシリコーンゴム粉末等の
応力緩和剤などを必要に応じて配合することができる。
Further, in the molding material for sealing of the present invention, higher fatty acids, metal salts of higher fatty acids,
Release agents such as ester wax, polyolefin wax, polyethylene, polyethylene oxide, dyes, coloring agents such as carbon black, epoxy silane, amino silane, ureido silane, vinyl silane, alkyl silane,
Coupling agents such as organic titanates and aluminum alcoholates, and stress relaxation agents such as silicone oil and silicone rubber powder can be blended as required.

【0015】以上のような各種配合成分を所定の配合量
に秤量し、まず、ミキサー等によって十分混合した後、
ミキシングロール、押出機、らいかい機などによって混
練を行う一般的方法を用いて加熱混練し、得られた混練
物を冷却した後、必要に応じて使いやすいよう粉砕し、
その後さらにエージング処理及び/又は上記と同様一般
的方法で加熱混練を行うことにより、本発明の封止用成
形材料が製造できる。製造後、必要に応じて冷却粉砕
し、成形条件に合うような寸法及び重量でタブレット化
すると使いやすい。エージング処理及び加熱混練は、両
者を行っても、いずれかのみでもよい。ここで、エージ
ング処理とは、スパイラルフローが5〜30%、好まし
くは10〜20%減少するまで、封止用成形材料を放置
することを言い、放置条件としては、温度が好ましくは
15〜80℃、より好ましくは25〜60℃で、時間が
好ましくは1〜48時間、より好ましくは6〜24時間
である。封止用成形材料の各種配合成分は、全て同時に
添加しても良いが、添加順序を適宜設定することもでき
る。また、必要に応じて各種配合成分を予備混練するこ
ともできる。例えば、エポキシ樹脂と硬化剤、硬化剤と
硬化促進剤、エポキシ樹脂及び/又は硬化剤と離型剤、
エポキシ樹脂及び/又は硬化剤と応力緩和剤、充填剤と
カップリング剤等を室温で又は加熱下に予備混練して用
いてもよい。
[0015] The above-mentioned various components are weighed to a predetermined compounding amount, and first sufficiently mixed by a mixer or the like.
Mixing roll, extruder, heat kneading using a general method of kneading with a mill, etc., after cooling the resulting kneaded material, pulverized as necessary for easy use,
Thereafter, the molding material for sealing of the present invention can be produced by further performing aging treatment and / or heat kneading by the same general method as described above. After production, it is easy to use if it is cooled and pulverized as required, and tableted with dimensions and weights that match the molding conditions. The aging treatment and the heating and kneading may be performed either or only one of them. Here, the aging treatment refers to leaving the molding compound for sealing until the spiral flow is reduced by 5 to 30%, preferably 10 to 20%. As the leaving condition, the temperature is preferably 15 to 80. C., more preferably 25 to 60 C., and the time is preferably 1 to 48 hours, more preferably 6 to 24 hours. The various components of the molding compound for sealing may all be added at the same time, but the order of addition may be appropriately set. In addition, if necessary, various components can be pre-kneaded. For example, an epoxy resin and a curing agent, a curing agent and a curing accelerator, an epoxy resin and / or a curing agent and a release agent,
An epoxy resin and / or a curing agent and a stress relaxing agent, a filler and a coupling agent, and the like may be pre-kneaded at room temperature or under heating before use.

【0016】本発明で得られる封止用成形材料により素
子を封止して得られる電子部品装置としては、リードフ
レーム、配線済みのテープキャリア、配線板、ガラス、
シリコンウエハ等の支持部材に、半導体チップ、トラン
ジスタ、ダイオード、サイリスタ等の能動素子、コンデ
ンサ、抵抗体、抵抗アレイ、コイル、スイッチ等の受動
素子などの素子を搭載し、必要な部分を本発明の封止用
成形材料で封止して得られる電子部品装置などが挙げら
れる。このような電子部品装置としては、例えば、リー
ドフレーム上に半導体素子を固定し、ボンディングパッ
ド等の素子の端子部とリード部をワイヤボンディングや
バンプで接続した後、本発明の封止用成形材料を用いて
トランスファ成形などにより封止してなる、DIP(Du
al Inline Package)、PLCC(Plastic Leaded Chip
Carrier)、QFP(Quad FlatPackage)、SOP(Sm
all Outline Package)、SOJ(Small Outline J-lea
dpackage)、TSOP(Thin Small Outline Packag
e)、TQFP(Thin QuadFlat Package)等の一般的な
樹脂封止型IC、テープキャリアにバンプで接続した半
導体チップを、本発明の封止用成形材料で封止したTC
P(Tape Carrier Package)、配線板やガラス上に形成
した配線に、ワイヤーボンディング、フリップチップボ
ンディング、はんだ等で接続した半導体チップ、トラン
ジスタ、ダイオード、サイリスタ等の能動素子及び/又
はコンデンサ、抵抗体、コイル等の受動素子を、本発明
の封止用成形材料で封止したCOB(Chip On Boad)モ
ジュール、ハイブリッドIC、マルチチップモジュー
ル、裏面に配線板接続用の端子を形成した有機基板の表
面に素子を搭載し、バンプまたはワイヤボンディングに
より素子と有機基板に形成された配線を接続した後、本
発明の封止用成形材料で素子を封止したBGA(Ball G
rid Array)、CSP(Chip Size Package)などが挙げ
られる。また、プリント回路板にも本発明の封止用エポ
キシ樹脂成形材料は有効に使用できる。
The electronic component device obtained by sealing the element with the sealing molding material obtained by the present invention includes a lead frame, a wired tape carrier, a wiring board, glass,
Active elements such as semiconductor chips, transistors, diodes, thyristors, etc., passive elements such as capacitors, resistors, resistor arrays, coils, switches, etc. are mounted on a support member such as a silicon wafer. An electronic component device obtained by sealing with a molding material for sealing may be used. As such an electronic component device, for example, a semiconductor element is fixed on a lead frame, and a terminal portion of an element such as a bonding pad and a lead portion are connected by wire bonding or a bump. DIP (Du) sealed by transfer molding using
al Inline Package), PLCC (Plastic Leaded Chip)
Carrier), QFP (Quad Flat Package), SOP (Sm
all Outline Package), SOJ (Small Outline J-lea
dpackage), TSOP (Thin Small Outline Packag)
e), a general resin-encapsulated IC such as TQFP (Thin QuadFlat Package), and a TC in which a semiconductor chip connected to a tape carrier by a bump is sealed with the molding material of the present invention.
P (Tape Carrier Package), active elements such as semiconductor chips, transistors, diodes, thyristors and / or capacitors, resistors, etc., connected to wires formed on wiring boards or glass by wire bonding, flip chip bonding, soldering, etc. A COB (Chip On Boad) module, a hybrid IC, a multi-chip module in which a passive element such as a coil is sealed with the sealing molding material of the present invention, and an organic substrate having a wiring board connection terminal formed on the back surface. After mounting the element and connecting the element and the wiring formed on the organic substrate by bump or wire bonding, BGA (Ball G) in which the element is sealed with the molding material for sealing of the present invention.
rid Array), CSP (Chip Size Package) and the like. Further, the epoxy resin molding material for encapsulation of the present invention can be effectively used for a printed circuit board.

【0017】本発明の封止用成形材料を用いて素子を封
止する方法としては、低圧トランスファー成形法が最も
一般的であるが、インジェクション成形法、圧縮成形法
等を用いてもよい。
As a method for sealing an element by using the molding material for sealing of the present invention, a low pressure transfer molding method is most common, but an injection molding method, a compression molding method or the like may be used.

【0018】本発明の封止用成形材料では、各種配合成
分を加熱混練後冷却し、さらにエージジング処理及び/
又は加熱混練することによって、樹脂成分と充填剤との
親和性が向上し、その結果、インサート品と封止用成形
材料との密着性が向上すると考えられる。
In the molding material for sealing of the present invention, the various components are heated and kneaded, then cooled, subjected to an aging treatment and / or
Alternatively, it is considered that the affinity between the resin component and the filler is improved by heating and kneading, and as a result, the adhesion between the insert product and the molding material for sealing is improved.

【0019】[0019]

【実施例】次に実施例により本発明を説明するが、本発
明の範囲はこれらの実施例に限定されるものではない。
Next, the present invention will be described with reference to examples, but the scope of the present invention is not limited to these examples.

【0020】実施例1〜6、比較例1〜3 エポキシ樹脂としてビフェニル型エポキシ樹脂(油化シ
ェルエポキシ株式会社製商品名エピコートYX−400
0H)、クレゾールノボラック型エポキシエポキシ樹脂
(住友化学工業株式会社製商品名ESCN195)及び
臭素化エポキシ樹脂(日本化薬株式会社製商品名BRE
N−S)、硬化剤としてフェノール・アラルキル樹脂
(三井東圧化学株式会社製商品名ミレックスXL225
−3L)及びフェノールノボラック樹脂(明和化成株式
会社製商品名H−1)、硬化促進剤としてトリフェニル
ホスフィン、充填剤として平均粒径17.5μm、比表
面積3.8m2/gの球状溶融シリカ、その他の添加剤
としてカルナバワックス(クラリアント社製)、カーボ
ンブラック(三菱化学株式会社製商品名MA−10
0)、三酸化アンチモン、γ−グリシドキシプロピルト
リメトキシシラン(エポキシシランカップリング剤)を
それぞれ表1に示す組成で配合し、ドライブレンドで予
備混合した後、混練温度80℃、混練時間10分の条件
でニ軸ロール混練(加熱混練)を行い、冷却粉砕した。
その後、さらに上記と同様の条件でニ軸ロール混練(加
熱混練)を行った後冷却粉砕して実施例1〜3の封止用
成形材料を、30℃、12時間放置のエージング処理後
冷却粉砕して実施例4〜6の封止用成形材料を、何も処
理しないで比較例1〜3の封止用成形材料をそれぞれ作
製した。
Examples 1 to 6 and Comparative Examples 1 to 3 Biphenyl type epoxy resin (Epicoat YX-400 manufactured by Yuka Shell Epoxy Co., Ltd.) was used as the epoxy resin.
0H), cresol novolak type epoxy epoxy resin (trade name ESCN195, manufactured by Sumitomo Chemical Co., Ltd.) and brominated epoxy resin (trade name BRE, manufactured by Nippon Kayaku Co., Ltd.)
NS), phenol aralkyl resin (Mirex XL225, manufactured by Mitsui Toatsu Chemicals, Inc.) as a curing agent
-3L) and a phenol novolak resin (trade name H-1 manufactured by Meiwa Kasei Co., Ltd.), triphenylphosphine as a curing accelerator, spherical fused silica having an average particle size of 17.5 μm and a specific surface area of 3.8 m 2 / g as a filler. And carnauba wax (manufactured by Clariant) and carbon black (manufactured by Mitsubishi Chemical Corporation under the trade name MA-10) as other additives.
0), antimony trioxide, and γ-glycidoxypropyltrimethoxysilane (epoxysilane coupling agent) were respectively blended in the composition shown in Table 1, and preliminarily mixed by dry blending. The mixture was kneaded with a twin-screw roll (heat kneading) under the conditions of minutes, and cooled and pulverized.
Thereafter, kneading (heating and kneading) with a twin-screw roll is further performed under the same conditions as described above, and the mixture is cooled and pulverized. The sealing molding materials of Examples 4 to 6 and the sealing molding materials of Comparative Examples 1 to 3 were produced without any treatment.

【0021】[0021]

【表1】 [Table 1]

【0022】作製した実施例、比較例の封止用成形材料
を、次の各試験により評価した。評価結果を表2に示
す。 (1)スパイラルフロー EMMI−1−66に準じたスパイラルフロー測定用金
型を用いて、180℃、90秒、7MPaの条件で成形
し、流動距離(inch)を求めた。 (2)Alピール強度(接着性の指標) アルミニウムピール試験用金型で、30μm厚みのアル
ミ箔上に100mm×70mm×3mmの試験片を18
0℃、90秒、7MPaの条件でトランスファ成形し
て、テンシロンを用いてヘッドスピード50mm/分の
条件で、10mm幅のアルミ箔を垂直方向に引き剥が
し、その強度を測定し、アズモールド強度とした。トラ
ンスファ成形した後に175℃で5時間後硬化を行った
ものを同様に測定してポストキュア強度とした。 (3)密着性 8×10mmのシリコーンチップを搭載した外形寸法20
×14×2mmの54ピンパッケージ(QFP、42アロ
イ材リードフレーム)を180℃、90秒、7MPaの
条件でトランスファ成形して、超音波短傷装置AT55
00(日立建機株式会社製商品名)を用いて封止用成形
材料とインサート品との剥離の有無を観察し、密着性を
評価した。 (4)耐リフロークラック性 上記(3)の密着性評価後のパッケージを、125℃で
24時間ベーキングを行い、85℃/85%RHの条件
で50時間加湿した後、215℃/90秒の条件でリフ
ロー処理を行い、クラックの有無を観察し、不良パッケ
ージ数/測定パッケージ数で評価した。 (5)耐湿性 線幅15μm、ギャップ5μmのアルミ配線を施した7.
2×3.9mmのシリコーンチップを搭載した外形寸法
6.3×19.5×3.8mmの16ピンパッケージ(D
IP、42アロイ材リードフレーム、パッシベーション
なし)をトランスファ成形により作製し、125℃で2
4時間ベーキングを行い、85℃/85%RHの条件で
72時間加湿した後、215℃/90秒の処理を行い、
PCT2atmの条件で放置したときの、アルミ配線腐
食による断線不良を導通試験で調べて、測定パッケージ
の50%で不良が発生した放置時間をカウントした。
The encapsulating molding materials of Examples and Comparative Examples were evaluated by the following tests. Table 2 shows the evaluation results. (1) Spiral flow Using a mold for spiral flow measurement according to EMMI-1-66, molding was performed under the conditions of 180 ° C., 90 seconds, and 7 MPa, and the flow distance (inch) was determined. (2) Al peel strength (index of adhesiveness) A test piece of 100 mm × 70 mm × 3 mm was formed on a 30 μm thick aluminum foil using an aluminum peel test mold.
Transfer molding was performed at 0 ° C. for 90 seconds at 7 MPa, and a 10-mm-wide aluminum foil was peeled off vertically using Tensilon at a head speed of 50 mm / min, and its strength was measured. did. After the transfer molding, post-curing was performed at 175 ° C. for 5 hours, and the post-curing strength was measured in the same manner. (3) Adhesion External dimensions 20 with 8 × 10 mm silicone chip mounted
A 54 pin package (QFP, 42 alloy lead frame) of 14 mm × 2 mm is transfer-molded under the conditions of 180 ° C., 90 seconds, 7 MPa, and the ultrasonic short wound device AT55 is used.
Using 00 (trade name, manufactured by Hitachi Construction Machinery Co., Ltd.), the presence or absence of peeling between the molding material for sealing and the insert product was observed, and the adhesion was evaluated. (4) Reflow crack resistance The package after the evaluation of adhesion in (3) above is baked at 125 ° C. for 24 hours, humidified at 85 ° C./85% RH for 50 hours, and then heated at 215 ° C./90 seconds. The reflow treatment was performed under the conditions, the presence or absence of cracks was observed, and evaluation was made based on the number of defective packages / the number of measurement packages. (5) Moisture resistance Aluminum wiring with a line width of 15 μm and a gap of 5 μm was provided7.
6.3 × 19.5 × 3.8 mm 16-pin package with a 2 × 3.9 mm silicone chip (D
IP, 42 alloy lead frame, no passivation) was prepared by transfer molding
After baking for 4 hours and humidifying for 72 hours under the condition of 85 ° C./85% RH, a treatment at 215 ° C./90 seconds is performed.
A disconnection failure due to aluminum wiring corrosion when left under the conditions of PCT2atm was examined by a conduction test, and the time during which the failure occurred in 50% of the measurement packages was counted.

【0023】[0023]

【表2】 [Table 2]

【0024】各種配合成分を加熱混練する一般的な方法
で作製した比較例1〜3では、いずれも接着性が低く、
インサート品との剥離が観察された。また、耐リフロー
クラック性が優れず、耐湿性にも劣っていた。これに対
して、加熱混練後冷却してさらにエージジング処理又は
加熱混練を行って作製した本発明の実施例1〜6では、
接着性、インサート品との密着性が高く、耐リフローク
ラック性、耐湿性も著しく優れていた。
In Comparative Examples 1 to 3, which were prepared by a general method of heating and kneading various components, the adhesiveness was low, and
Peeling from the insert product was observed. Further, the reflow crack resistance was not excellent and the moisture resistance was poor. On the other hand, in Examples 1 to 6 of the present invention, which were produced by performing aging treatment or heat kneading after cooling after heating and kneading,
The adhesiveness and the adhesion to the insert product were high, and the reflow crack resistance and moisture resistance were remarkably excellent.

【0025】[0025]

【発明の効果】本発明になる封止用成形材料は、実施例
で示したようにインサート品との密着性が高く、耐リフ
ロークラック性、耐湿性の信頼性に優れ、その出荷時の
梱包や、半導体装置等の電子部品装置の製造工程での吸
湿管理等も簡便になり、この封止用成形材料を用いてI
C、LSI等の素子を封止すれば信頼性に優れる電子部
品装置を得ることができるので、その工業的価値は大で
ある。
The molding material for sealing according to the present invention has high adhesion to the insert product, excellent reflow crack resistance and excellent moisture resistance reliability as shown in the examples, and its packaging at the time of shipment. In addition, the management of moisture absorption and the like in the manufacturing process of electronic component devices such as semiconductor devices is simplified.
Since an electronic component device having excellent reliability can be obtained by encapsulating elements such as C and LSI, its industrial value is great.

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 4J002 CC03X CC10X CD00W CD03W CD04W CD05W CD06W CD18W CD19W DE017 DE077 DE147 DE187 DE237 DF017 DJ007 DJ017 DK007 DL007 EJ016 EJ026 FA087 FD017 FD14X FD146 GQ00 4M109 AA01 BA01 BA03 CA21 CA22 EA02 EA03 EB02 EB03 EB06 EB07 EB08 EB09 EB11 EB12 EB13 EB19 EC01 EC03 EC09 ──────────────────────────────────────────────────続 き Continued on the front page F-term (reference) 4J002 CC03X CC10X CD00W CD03W CD04W CD05W CD06W CD18W CD19W DE017 DE077 DE147 DE187 DE237 DF017 DJ007 DJ017 DK007 DL007 EJ016 EJ026 FA087 FD017 FD14X FD146 GQ00 4M109 AA01EB01 BA01BA02 EB07 EB08 EB09 EB11 EB12 EB13 EB19 EC01 EC03 EC09

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】エポキシ樹脂、硬化剤、及び充填剤を必須
成分とし、全配合成分を加熱混練後冷却し、さらにエー
ジング処理及び/又は加熱混練してなる封止用成形材
料。
An encapsulating molding material comprising an epoxy resin, a curing agent and a filler as essential components, all components being heated and kneaded, then cooled, subjected to an aging treatment and / or heated and kneaded.
【請求項2】エポキシ樹脂、硬化剤、及び充填剤を必須
成分とする配合成分を加熱混練後冷却し、さらにエージ
ング処理及び/又は加熱混練することを特徴とする請求
項1記載の封止用成形材料の製造方法。
2. The encapsulating material according to claim 1, wherein a compounded component comprising an epoxy resin, a curing agent and a filler as essential components is heated and kneaded, then cooled, and further subjected to an aging treatment and / or heat kneading. Manufacturing method of molding material.
【請求項3】請求項1記載の封止用成形材料により封止
された素子を備えた電子部品装置。
3. An electronic component device comprising an element sealed with the molding material for sealing according to claim 1.
JP30132899A 1999-10-22 1999-10-22 Molding material for sealing, its manufacturing method, and electronic part device Pending JP2001118969A (en)

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JP2003101176A (en) * 2001-09-26 2003-04-04 Hitachi Chem Co Ltd Compound material for wiring board and production method therefor
KR20030028904A (en) * 2001-10-04 2003-04-11 삼성전자주식회사 Molding material comprised moisture and the manufacturing method
JPWO2002094905A1 (en) * 2001-05-18 2004-09-09 株式会社日立製作所 Thermosetting resin cured product
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JPWO2002094905A1 (en) * 2001-05-18 2004-09-09 株式会社日立製作所 Thermosetting resin cured product
JP2003101176A (en) * 2001-09-26 2003-04-04 Hitachi Chem Co Ltd Compound material for wiring board and production method therefor
KR20030028904A (en) * 2001-10-04 2003-04-11 삼성전자주식회사 Molding material comprised moisture and the manufacturing method
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JP2012238876A (en) * 2006-11-15 2012-12-06 Hitachi Chem Co Ltd Thermosetting light reflecting resin composition, method of manufacturing the same, and optical semiconductor mounting substrate and optical semiconductor device using the same
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JP2013127068A (en) * 2006-11-15 2013-06-27 Hitachi Chemical Co Ltd Thermosetting resin composition for light reflection, method for manufacturing the resin composition, and optical semiconductor element-mounting substrate and optical semiconductor device using the resin composition
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