JP2001196299A - Heat treatment equipment - Google Patents

Abstract

(57) [Summary] [Problem] It is possible to prevent a resist sublimate or the like from being easily accumulated, prevent the temperature distribution of a substrate to be processed from becoming unstable, and control the temperature of the substrate to be processed with high accuracy. To provide a heat treatment device. A substrate to be processed is mounted on or above the substrate, and a heating plate for heating the substrate to be processed and a heating processing space for heating the substrate to be processed defined above the heating plate can be surrounded. A surrounding member provided, a sealing mechanism for substantially sealing the periphery of the hot plate when the heating processing space is surrounded by the surrounding member, and an airflow forming means for forming an airflow from an outer periphery toward a center in the heating processing space. And a heat treatment apparatus characterized by comprising:

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment apparatus for heating and processing a substrate such as an LCD substrate.

[0002]

2. Description of the Related Art In the manufacture of a liquid crystal display (LCD), a photoresist liquid is applied to a rectangular LCD substrate made of glass to form a resist film, and the resist film is exposed according to a circuit pattern and developed. A circuit pattern is formed by a so-called photolithography technique of processing. Conventionally, a resist coating / developing processing system including a plurality of processing units for performing such a series of steps has been used.

In this resist coating / developing processing system, after a photoresist is applied to the substrate, or before and after development, the substrate is subjected to heat treatment by a heat treatment unit. In such a heat treatment unit, contact baking in which a substrate is directly placed on a hot plate or proximity baking in which a slight gap is provided between the hot plate and the substrate for heating is employed. Among these, the proximity bake process has an advantage that a product defect due to charging of the substrate is avoided because the substrate is not directly placed on the hot plate.

However, the conventional heat treatment unit has a problem in that the in-plane temperatures of the substrate and the hot plate are difficult to be uniform due to the structure. In particular, in the case of the proximity bake, the uniformity of the in-plane temperature distribution is likely to deteriorate. In order to solve this problem, it is conceivable to use a heat treatment unit having a temperature-tightness improved by using a closed airtight structure as a heat treatment unit. Sublimates and volatiles from the water are likely to accumulate, and maintenance of the device becomes difficult, so that it is not suitable for practical use.

Therefore, a heat treatment space formed between the hot plate and the ceiling is configured to be openable and closable by a shutter, and a heat treatment device that exhausts air with a small gap provided between the shutter and the hot plate. Are used as heat treatment units. In this heat treatment device, exhaust is performed while introducing outside air from the gap between the shutter and the hot plate to prevent the resist sublimate or the like from accumulating in the heat treatment space.
It is configured so that maintenance can be easily performed by a surrounding member that can be opened and closed.

[0006]

However, in the heat treatment apparatus as described above, the outside air introduced from the gap between the shutter and the hot plate deprives the heat of the hot plate and the substrate, and the temperature of the hot plate and the substrate is uniform. There is a problem that the property is easily deteriorated.
In particular, when such a heat treatment apparatus is used for heat treatment of an LCD substrate, the hot plate and the four corners of the substrate are easily cooled, and the substrate exhibits a characteristic temperature distribution in which the temperatures of the four corners are low,
Poor temperature uniformity.

In order to solve this problem, in the above-described heat treatment apparatus, a gap is further provided between the cover member and the shutter so that outside air is taken in from the gap and the gap between the hot plate and the shutter. Measures have been taken to reduce the amount of outside air that flows in. However, when such measures are taken, there is a problem that the substrate is easily affected by the outside air (downflow), and the stability of the temperature distribution is deteriorated. In particular, in this case, individual differences among a plurality of heat treatment apparatuses are likely to occur.

The present invention has been made in view of such circumstances, and resist sublimates and the like hardly accumulate in an apparatus.
An object of the present invention is to provide a heat treatment apparatus which can prevent the temperature distribution of a substrate to be processed from becoming unstable due to the invasion of outside air, and can control the temperature of the substrate to be processed with high accuracy.

[0009]

According to a first aspect of the present invention, a substrate to be processed is mounted on or above the substrate, and a hot plate for heating the substrate to be processed is provided. And a surrounding member provided so as to surround a heat treatment space for heating the substrate to be processed defined above the hot plate, and when the surrounding heat treatment space is surrounded by the surrounding member, A heat treatment apparatus is provided, comprising: a substantially hermetic sealing mechanism; and airflow forming means for forming an airflow from the outer periphery toward the center in the heat treatment space.

According to such a configuration, the periphery of the hot plate is substantially sealed to prevent the invasion of outside air from the gap around the hot plate. Of the substrate to be processed and an unstable temperature distribution can be prevented, and an airflow from the outer periphery to the center is formed in the heat treatment space, so that the temperature of the substrate to be treated can be made uniform. Therefore, the substrate temperature can be controlled with high accuracy. In addition, accumulation of sublimates due to the formed air current can be prevented.

The inventors of the present invention have previously proposed a heat treatment apparatus in which the periphery of a hot plate is substantially sealed to form an airflow from the center to the outer periphery of the hot plate. It is said that the distribution can be made uniform and stable, and the substrate temperature can be made more precise. However, although a certain effect can be obtained by forming the airflow from the center to the outer periphery, when the airflow from the center to the outer periphery is formed, the air tends to flow toward the center in the longitudinal direction of the substrate and it is difficult to balance the exhaust. It has been found that a local temperature drop may occur at the center of the long side of the substrate peripheral portion. Therefore, in the present invention, by forming an airflow from the outer periphery to the center, it is easy to balance the exhaust gas, to prevent such a local decrease in the temperature of the substrate, and to realize highly accurate temperature control.

[0012] The air flow forming means of the heat treatment apparatus is provided above the heat treatment space, and is provided above the heat treatment space with an outside air introduction part for introducing outside air into the heat treatment space. An exhaust portion for exhausting the heat treatment space, an exhaust mechanism for exhausting the heat treatment space via the exhaust portion, and an upper portion of the heat treatment space arranged so as to face the hot plate, And a first rectifying plate having an opening formed therein, and when the exhaust mechanism is operated, the outside air introduced from the outside air introduction unit is supplied to the first airflow opening.
To the outer peripheral side of the heat treatment space along the upper surface of the rectifier plate, and further to the center from the outer peripheral side of the heat treatment space along the lower surface of the first rectifier plate, and the opening of the first rectifier plate What is exhausted from the exhaust part via the above can be suitably used.

By using such an airflow forming means, an airflow from the outer periphery toward the center can be effectively formed in the heat treatment space, and the outside air can be introduced while the air is exhausted. The accumulation of the resist sublimate and the like in the space can be prevented very effectively.

In the above-mentioned airflow forming means, the surface of the first rectifying plate on the hot plate side is subjected to a high-reflectance surface finish so that the substrate to be processed can be placed on both the hot plate side and the rectifying plate side. , And the substrate to be processed can be efficiently heated.

Further, by providing a second rectifying plate disposed between the first rectifying plate and the hot plate of the above-mentioned airflow forming means so as to face the opening of the first rectifying plate, the opening is provided. The flow of air in the periphery can be adjusted, and the temperatures of the substrate to be processed and the hot plate can be made uniform and controlled with high precision.

In the second rectifying plate, the surface on the hot plate side is subjected to a surface finish having a low reflectivity, so that the second rectifying plate reflects heat from the hot plate to be locally applied to the substrate to be processed. It is possible to prevent the generation of a high temperature part.

Further, the above-mentioned surrounding member can be arranged so as to be able to ascend and descend so as to surround the heat treatment space when ascending. Thus, when performing the heat treatment, the surrounding member can be raised to surround the heat treatment space, and
By lowering the surrounding member when performing maintenance, the maintainability of the apparatus can be improved.

Further, the upper part of the heat treatment space may be covered by a cover member, and a gap below the hot plate and a gap between the cover member and the surrounding member may be closed by a sealing mechanism. Thereby, invasion of outside air around the hot plate can be prevented.

Further, by arranging a reflecting plate for reflecting the heat from the hot plate so as to cover the lower surface and the side surface of the hot plate, the heat from the hot plate can be effectively used for the heat treatment. In this case, the gap between the reflection plate and the surrounding member is closed by the seal mechanism, so that invasion of outside air around the hot plate can be effectively prevented.

The sealing mechanism includes a pair of engaging members disposed on the outer peripheral side of the reflection plate and the lower part on the inner peripheral side of the surrounding member, and engaged with each other when the surrounding member is raised, and a lower part of the cover member. An example is provided in which a pair of abutting members are disposed on the upper portion of the surrounding member and come into contact with each other when the surrounding member is raised.

In the above-mentioned sealing mechanism, at least one of the engaging members is provided with an elastic member at a position where it is engaged with the other engaging member, and at least one of the abutting members is in contact with the other abutting member. By arranging the elastic member at the contact position, it is possible to effectively prevent outside air from entering the heat treatment space.

According to a second aspect of the present invention, a substrate to be processed is disposed on or above the substrate, and a hot plate for heating the substrate to be processed and a substrate for heating defined above the hot plate are heated. A surrounding member provided so as to surround the heat treatment space to be processed, a cover member covering an upper part of the heat treatment space, and when surrounding the heat treatment space by the surrounding member, the hot plate and the surrounding member A sealing mechanism that closes a gap between the cover member and the surrounding member, and an external air introduction unit that is provided at an outer central portion of the cover member for introducing outside air and exhausts the heat treatment space. A duct member having an exhaust portion for exhausting the heat treatment space through the exhaust portion, and an exhaust mechanism disposed above the heat treatment space so as to face the hot plate, and having an opening at the center thereof. Formed When the exhaust mechanism is operated, the outside air introduced from the outside air introduction unit is provided along the upper surface of the first straightening plate on the outer peripheral side of the heat treatment space. And further from the outside of the heat treatment space to the center along the lower surface of the first current plate, and exhausted from the exhaust part of the duct member through the opening of the first current plate. Is provided.

According to such a configuration, in a state where the heat treatment space is substantially sealed by the sealing mechanism, the heat treatment space is exhausted through the exhaust portion of the duct member, and outside air is introduced from the outside air introduction portion. The air flow from the outer circumference to the center is formed along the lower surface of the rectifying plate 1 so that the exhaust balance can be easily maintained, and the atmosphere in the heat treatment space is replaced with the outside air without destabilizing the temperature distribution of the substrate. The accumulation of sublimation and the like can be prevented, and the temperature of the substrate to be processed can be made uniform and the substrate temperature can be controlled with high accuracy.

Here, a second rectifying plate is disposed between the first rectifying plate and the hot plate so as to face the opening of the first rectifying plate, and air from the heat treatment space is supplied to the first rectifying plate. It is preferable to flow through the gap between the first rectifying plate and the second rectifying plate to the opening of the first rectifying plate. This makes it possible to regulate the flow of air around the opening of the first current plate, thereby preventing the substrate temperature from becoming uneven.

The duct member has a tubular member connected to the heat treatment space at the center, and air from the heat treatment space is exhausted from the exhaust portion through the tubular member, and air introduced from the outside air introduction portion is discharged from the duct member. It can be configured to be supplied to the heat treatment space through the outside of the cylindrical member. This makes it possible to effectively exhaust air from the heat treatment space and to introduce air into the heat treatment space, thereby forming a desired airflow in the heat treatment space.

Further, a flow passage is formed between the cover member and the first current plate, and the outside air introduced from the outside air introduction portion is configured to reach the heat treatment space through the flow passage. This allows the outside air to be supplied to the heat treatment space after being heated in the flow path, and the influence of the outside air on the temperature of the substrate and the hot plate can be further reduced. It is preferable in controlling the temperature.

[0027]

Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a plan view showing an LCD substrate resist coating / developing processing system to which the present invention is applied.

This resist coating / developing processing system comprises:
A cassette station 1 on which a cassette C containing a plurality of LCD substrates G is placed; a processing unit 2 having a plurality of processing units for performing a series of processes including resist coating and development on the substrates G; And an interface unit 3 for transferring the substrate G to and from the processing unit 2. A cassette station 1 and an interface unit 3 are arranged at both ends of the processing unit 2.

The cassette station 1 includes a transport mechanism 10 for transporting the LCD substrate G between the cassette C and the processing section 2. Then, the cassette C is loaded and unloaded at the cassette station 1. The transport mechanism 10 includes a transport arm 11 that can move on a transport path 10 a provided along the direction in which the cassettes C are arranged, and the transport arm 11 transports the substrate G between the cassette C and the processing unit 2. Is performed.

The processing section 2 is divided into a front section 2a, a middle section 2b, and a rear section 2c.
2, 13 and 14, and each processing unit is disposed on both sides of these transport paths. Then, relay portions 15 and 16 are provided between them.

The front section 2a includes a main transfer device 17 movable along the transfer path 12. On one side of the transfer path 12, two cleaning units (SCR) 21a and 21b are arranged. On the other side of the transport path 12, a processing block 25 in which an ultraviolet irradiation unit (UV) and a cooling processing unit (COL) are stacked in two stages, a heating processing unit (H
A processing block 26 in which P) is stacked in two stages and a processing block 27 in which cooling processing units (COL) are stacked in two stages are arranged.

The middle section 2b includes a main transfer device 18 movable along the transfer path 13. On one side of the transfer path 13, a resist coating unit (CT) 22 and a peripheral edge of the substrate G are provided. A peripheral resist removal unit (ER) 23 for removing the resist of the portion is provided integrally,
On the other side of the transport path 13, a processing block 28 in which a heat processing unit (HP) is stacked in two stages, a processing block 29 in which a heating processing unit (HP) and a cooling processing unit (COL) are vertically stacked. , And a processing block 30 in which an adhesion processing unit (AD) and a cooling processing unit (COL) are vertically stacked.

Further, the rear section 2c is provided with a main transport device 19 movable along the transport path 14,
On one side, three development processing units 24a, 24
b and 24c are disposed, and a processing block 31 in which a heat treatment unit (HP) is stacked in two stages on the other side of the transport path 14, and both heat treatment units (HP)
And processing blocks 32 and 33 in which a cooling processing unit (COL) is vertically stacked.

The processing unit 2 has only a spinner system unit such as a cleaning unit 21a, a resist coating unit (CT) 22, and a developing unit (DEV) 24a on one side of the transport path. On the other side, only a thermal processing unit such as a heating processing unit or a cooling processing unit is arranged.

Further, a chemical solution supply unit 34 is disposed at a portion of the relay units 15 and 16 on the side where the spinner system unit is disposed, and a space 35 for performing maintenance of the main transport device is provided.

The main transporting devices 17, 18, and 19 respectively include an X-axis driving mechanism, a Y-axis driving mechanism in two directions in a horizontal plane,
And a vertical Z-axis drive mechanism.
A transfer arm 17a, 18a, 19a for supporting a substrate G,
have.

The main transfer device 17 transfers the substrate G to and from the transfer arm 11 of the transfer mechanism 10, and loads and unloads the substrate G to and from each processing unit in the front stage 2 a. Has a function of transferring the substrate G between the two. In addition, the main transfer device 18 transfers the substrate G to and from the relay unit 15, and loads and unloads the substrate G to and from each processing unit in the middle unit 2b.
Further, it has a function of transferring the board G to and from the relay section 16. Further, the main transport device 19 is connected to the relay unit 16.
And transfer the substrate G between the
Has a function of loading / unloading the substrate G from / to each processing unit, and transferring the substrate G to / from the interface unit 3. Note that the relay sections 15 and 16 also function as cooling plates.

The interface section 3 includes an extension 36 for temporarily holding the substrate when transferring the substrate to and from the processing section 2, and two buffer stages 37 provided on both sides thereof for disposing a buffer cassette. And a substrate G between these and an exposure apparatus (not shown)
And a transport mechanism 38 for carrying in and out the wafer. The transport mechanism 38 includes the extension 36 and the buffer stage 3
The transfer arm 39 is provided on the transfer path 38a provided along the arrangement direction of the transfer unit 7 and the transfer arm 39 transfers the substrate G between the processing unit 2 and the exposure apparatus.

By consolidating and integrating the processing units in this manner, space can be saved and processing efficiency can be improved.

In the resist coating / developing processing system configured as described above, the substrate G in the cassette C is transported to the processing unit 2, and the processing unit 2 first irradiates the processing block 25 of the former stage 2a with ultraviolet rays. Surface modification and cleaning processing is performed in the unit (UV), and the cooling processing unit (COL)
After cooling in the cleaning unit (SCR) 21a, 21
After the scrubber cleaning is performed in b and heated and dried in one of the heat treatment units (HP) of the processing block 26,
Any of the cooling processing units (CO
L).

Thereafter, the substrate G is transported to the middle section 2b,
In order to enhance the fixability of the resist, the upper adhesion processing unit (AD) of the processing block 30 is subjected to hydrophobizing treatment (HMDS treatment) and cooled by the lower cooling processing unit (COL).
A resist is applied in T) 22, and an extra resist on the periphery of the substrate G is removed in a peripheral resist removal unit (ER) 23. Thereafter, the substrate G is pre-baked in one of the heat processing units (HP) in the middle section 2b, and the lower cooling processing unit (C) in the processing block 29 or 30 is processed.
OL).

Thereafter, the substrate G is transferred from the relay section 16 to the exposure apparatus via the interface section 3 by the main transfer apparatus 19, where a predetermined pattern is exposed. And
The substrate G is carried in again via the interface unit 3,
The processing blocks 31, 32, 3 of the subsequent stage 2c as required
After performing post-exposure bake processing in any one of the heat processing units (HP) of No. 3, development processing is performed in any of the development processing units (DEV) 24a, 24b, and 24c to form a predetermined circuit pattern. The developed substrate G is subjected to a post-baking process in one of the heat treatment units (HP) in the rear part 2c, and then cooled in one of the cooling units (COL). , 18, 17 and the transport mechanism 10 are accommodated in a predetermined cassette C on the cassette station 1.

Next, a heat processing unit (HP) to which the heat processing apparatus of the present invention is applied, which is used in the processing blocks 26, 28, 31, 32, and 33 of the resist coating and developing system, will be described. FIG. 2 is a schematic sectional view of the heat treatment unit according to the first embodiment of the present invention. FIG. 3 is a schematic view showing a state in which the AA section of FIG. 2 is viewed from above, and FIG. 4 is a schematic view showing a state in which the BB section of FIG. 2 is viewed from above.

As shown in FIGS. 2 to 4, this heat treatment unit (HP) mainly has a case 60 having an opening 60a facing the transport path 12, 13 or 14 side of the resist coating / developing processing system. A heating plate 41 for heating the substrate G housed in the case 60, a cover member 57 arranged to cover the upper part of the case 60, and a heating process formed between the cover member 57 and the heating plate 41. A shutter (surrounding member) 48 capable of surrounding the space 65, a first rectifying plate 54 and a second rectifying plate 55 disposed above the heat treatment space 65 so as to face the hot plate 41, and an outside air introduction unit A duct member 66 having an exhaust portion 58 and an exhaust portion 58;
And an exhaust mechanism 76 provided in an exhaust pipe 58a connected to the exhaust pipe 58a. Of these, the outside air introduction unit 59, the exhaust unit 58, the exhaust mechanism 76, the first rectifying plate 54, and the second rectifying plate 55 constitute an airflow forming unit that forms an airflow described later. The second rectifying plate 55 prevents turbulence in the airflow near the opening 53 and prevents
3 is provided as an auxiliary in order to prevent the temperature distribution of the substrate G and the hot plate 41 from being adversely affected.
It is not indispensable to form an airflow described later.

The heating plate 41 is made of, for example, an aluminum alloy or the like, and has a rectangular upper surface in conformity with the shape of the substrate G. A heater and a temperature sensor (not shown) are embedded on the back side of the heating plate 41, and the temperature detected by the temperature sensor is transmitted to a control unit (not shown), and the amount of heat generated by the heater is adjusted accordingly.
The temperature of the hot plate 41 is maintained at a predetermined temperature of, for example, 120 to 150 ° C.

The hot plate 41 is provided with, for example, nine through holes 43. Support pins 44 for supporting the substrate G are inserted through these through holes 43, respectively.
The support pins 44 are held by holding members 46 provided below the hot plate 41. The holding member 46 is connected to a holding member elevating mechanism 47. Therefore, the support pin 44 can be protruded and retracted from the surface of the hot plate 41 by raising and lowering the holding member 46 by the holding member lifting mechanism 47.

The substrate G is moved between the heating unit (HP) and the transfer arms 17a, 18a, 19a.
When the transfer is performed, the holding member 46 is raised by the holding member elevating mechanism 47 so that the support pins 44 project from the surface of the hot plate 41, and the transfer arms 17a, 18
The substrate G is transferred between the supporting pins 44 a and 19 a and the support pins 44.

When a heating process is performed after receiving the substrate G, the holding member 46 is lowered by a predetermined distance by the holding member lifting / lowering mechanism 47, and the substrate G is set at a predetermined position. For example, in the case of contact baking where heating is performed in a state where the substrate G is in contact with the hot plate 41, the support pins 44
1 so that it is completely immersed from the surface of the hot plate 4
The heat treatment may be performed so as to be directly placed on the substrate 1. Further, in the case of proximity baking in which heating is performed in a state where the substrate G is supported above the heating plate 41 without being in contact with the heating plate 41, the support pins 44 may be projected from the surface of the heating plate 41 by a predetermined length. Heat treatment may be performed, or the substrate G and the hot plate 41 may be separated by a spacer (not shown).
The heat treatment may be performed while ensuring an interval.

Below the hot plate 41, a reflecting plate 42 for reflecting heat from the hot plate 41 is arranged. This reflection plate 42
Covers not only the lower surface but also the side surface of the hot plate 41, that is, the reflecting plate 42 has a shape like a thin container for storing the hot plate 41. The reflection plate 42 and the heating plate 41 are arranged at a predetermined interval by a spacer (not shown). Between the reflection plate 42 and the heating plate 41, a seal member 42a for preventing outside air from entering from under the heating plate is provided. Are located. The shape of the reflector 42 and the positional relationship between the reflector 42 and the hot plate 41 are as follows.
It is appropriately determined according to the heat generation pattern of the heater arranged on the heating plate 41 and the temperature pattern required for the heating plate 41. The seal member 42a can be made of, for example, silicone rubber.

The first current plate 54 is provided in the heat treatment space 6.
5 is provided so as to face the hot plate 41, and an opening 53 is provided at a position corresponding to the center of the hot plate 41. The first current plate 54 is formed in a rectangular shape according to the shape of the hot plate 41 and the substrate G. If the surface of the first rectifying plate 54 on the side of the hot plate 41 is subjected to a high-reflectance surface finish such as mirror finishing or plating, the heat radiated from the hot plate 41 is reflected by the first rectifying plate 54 and This is preferable because G can be efficiently heated from both sides.

The second current plate 55 includes the first current plate 5
4 and the heat plate 41, it is arranged so as to face the opening 53 provided in the first current plate 54 and is slightly larger than the opening 53. The second current plate 55 is formed in a rectangular shape according to the shape of the hot plate 41, and the second current plate 55 and the hot plate 41 are substantially similar to each other as shown in FIG. Thus, heat treatment can be performed uniformly in the plane. Further, the shape of the opening 53 and the second current plate 55
Both have substantially similar shapes. Further, if the reflectance of the second rectifying plate 55 is increased, the temperature of the substrate G may be locally increased by the heat reflected by the second rectifying plate 55. The surface on the 41 side is preferably subjected to a surface finish such as blackening the surface to reduce the reflectance.

The cover member 57 includes a first current plate 54.
The duct member 66 is provided at the center of the upper portion of the cover member 57. The duct member 66 has an upper part 6
6a and a lower part 66b, two exhaust parts 58 are provided in the upper part 66a, and two outside air introduction parts 5 are provided in the lower part 66b.
9 are provided. And the duct member 66 penetrates through the lower part 66b from the bottom part of the upper part 66a in the center part,
It has a tubular member 56 reaching the opening 53 of the first current plate 54. The two exhaust portions 58 are provided side by side on one side wall of the upper portion 66a.
b are provided opposite to each other with the tubular member 56 interposed therebetween.

The lower part of the tubular member 56 is
7 is inserted into a hole 57a formed at the center of the tube 7 and larger than the cylindrical member 56. Therefore, in that portion, a gap 56 a is formed between the cover member 57 and the tubular member 56. Therefore, the outside air introduced from the outside air introduction section 59 reaches the heat treatment space 65 through the gap 56a, and the gap 56a functions as an outside air introduction path. On the other hand, the inside of the tubular member 56 is connected to the heat treatment space 65 via the opening 53 and functions as an exhaust path.

An exhaust pipe 58a is connected to the exhaust section 58, and the exhaust mechanism 76 is connected to the exhaust pipe 58a. Therefore, by operating the exhaust mechanism 76, the outside air reaches the heat treatment space 65 through the gap 56 a from the outside air introduction part 59, and the space inside the tubular member 56, the space in the upper part 66 a, and the exhaust part Exhausted through 58.

The shutter 48 is arranged so as to move up and down so as to surround the heating plate 41 and the reflection plate 42. A shutter elevating mechanism 49 is connected to the shutter 48, and the shutter 48 can be raised or lowered by driving the shutter elevating mechanism 49. When transferring the substrate G to / from the transfer arm 17a, 18a, or 19a, the shutter 48 is moved down by the shutter raising / lowering mechanism 49 to perform the work. Mechanism 4
The shutter 48 is raised by 9 to surround the heat treatment space 65 formed between the cover member 57 and the hot plate 41. If the shutter 48 is lowered, maintenance of the apparatus can be easily performed.

Here, the first end of the shutter 48 is
A contact member 61 is disposed, and a second contact member 63 is disposed on the outer peripheral side of the lower surface of the cover member 57. An elastic member 64 is attached to the lower surface of the second contact member 63. Have been. When the shutter 48 is raised, the first contact member 61 and the second contact member 63 contact each other via the elastic member 64, and the shutter 48 and the cover member 57.
To prevent outside air from entering between the shutter 48 and the cover member 57 during the heat treatment.

On the other hand, the first inside of the shutter 48 is
Are disposed so as to protrude toward the inner periphery, and an elastic member 50 is attached to the upper surface of the first engaging member 51. Further, a second engagement member 45 is arranged on the reflection plate 42 so as to protrude toward the outer periphery. When the shutter 48 is raised, the first engagement member 51 and the second engagement member 45 engage with each other via the elastic member 50 to seal the space between the shutter 48 and the reflection plate 42. This prevents external air from entering between the shutter 48 and the reflection plate 42 during the heating process.

Next, a description will be given of a processing operation when the substrate G is subjected to the heat treatment using the heat treatment apparatus according to this embodiment with reference to FIG. First, the support pins 44 are made to protrude from the surface of the hot plate 41 with the shutter 48 lowered. Next, the transfer arm 17 holding the substrate G
The substrate G is passed over the support pins 44 by a, 18a, and 19a entering through the opening 60a. Next, the transfer arm 17
After the a, 18a, and 19a have been withdrawn from the opening 60a, the shutter 48 is raised by the shutter raising / lowering mechanism 49 to substantially seal the periphery of the hot plate 41, and the support pins 44 are moved from the surface of the hot plate by a predetermined length. Submerged substrate G
Is set to a predetermined position, and the heat treatment of the substrate G is performed by the hot plate 41 while evacuating by operating the exhaust mechanism 76.

By operating the exhaust mechanism 76, the atmosphere in the heat treatment space 65 is exhausted from the exhaust part 58, and the outside air is introduced into the heat treatment space 65 from the outside air introduction part 59. By introducing the outside air while performing the exhaust as described above, the outside air introduced from the outside air introduction part 59 is passed through the gap 56 a between the tubular member 56 and the cover member 57 to the first straightening plate 54 and the cover member 57. And flows along the upper surface of the first rectifying plate 54 to the outer peripheral side of the heat treatment space 65, and then along the lower surface of the first rectifier plate 54 from the outer periphery of the heat treatment space to the center. Flow, the first current plate 54 and the second current plate 54
An airflow that flows to the opening 53 through the gap with the current plate 55 is formed. In FIG. 6, this airflow is indicated by a dotted line, and arrows are provided in the direction in which the airflow flows.

In the heat treatment apparatus according to this embodiment, since the shutter 48 is raised and the periphery of the heat plate 41 is substantially closed as described above, the heat treatment is performed during the heat treatment as in the prior art. The outside air does not enter through a gap around the substrate G, thereby preventing the outside air from deteriorating or destabilizing the temperature distribution of the substrate G. Further, as described above, the air flows from the outside to the center of the heat treatment space along the lower surface of the first current plate 54 and forms an air flow from the outer periphery to the center, whereby the temperature of the substrate G is locally controlled. Can be prevented from occurring, and the temperatures of the substrate G and the heating plate 41 can be controlled with high accuracy. Further, by performing the heat treatment while replacing the atmosphere in the heat treatment space 65, the heat treatment can be performed in a state where the resist sublimate or the like is not easily accumulated.

In the above-described heat treatment apparatus, when the air is exhausted from the outside air introduction part 59 and the outside air is introduced from the opening 53, and the air flow is formed in the opposite direction to the present invention, the substrate is Local low-temperature portions are likely to occur in the center of the long side of the peripheral portion of the G or the hot plate 41, and it is difficult to control the temperature of the substrate G with high accuracy.

On the other hand, when an airflow from the outer periphery to the center is formed as in the heat treatment apparatus according to the present embodiment, local deviations in the temperatures of the substrate G and the heating plate 41 may not occur. Absent. This is because, when an airflow from the center to the outer periphery is formed, it is difficult to balance the exhaust gas and the airflow tends to be biased. Therefore, the bias of the airflow causes a local temperature bias. It is considered that when forming an airflow toward the center, it is relatively easy to balance the exhaust gas and to form a uniform airflow, and it is considered that local temperature deviation does not occur in the substrate or the hot plate.

In order to confirm this, the in-plane variation of the heating state of the hot plate 41 between the case where the airflow from the outer periphery toward the center and the case where the airflow from the center to the outer periphery is formed in the heat treatment apparatus is described. It was measured. That is, as shown in FIG. 7, the hot plate 41 is divided into nine regions 101 to 109,
The hot plate 41 is evacuated at a displacement of 1.37 m ³ / min, and the hot plate 41 is heated while forming either an airflow from the outer periphery to the center or an airflow from the center to the outer periphery.
The change with time of the hot plate temperature at 109 was measured. FIG. 8 shows the measurement results. FIG. 8A shows a case where an airflow from the center to the outer periphery is formed, and FIG. 8B shows a case where an airflow from the outer periphery to the center is formed. From FIG. 8, it was confirmed that the temperature variation in the surface of the hot plate 41 was smaller when the airflow from the outer periphery toward the center was formed than when the airflow from the center toward the outer periphery was formed. In the heat treatment apparatus, the heating state of the substrate G shows almost the same behavior as the heating state of the hot plate. Therefore, this measurement result shows that the temperature variation in the plane is better when the airflow from the outer periphery to the center is formed. This shows that a small amount of heat treatment can be performed on the substrate G.

In the heat treatment apparatus according to this embodiment, by using the first rectifying plate 54 to form an airflow from the outer periphery to the center of the heat treatment space as described above,
The outside air introduced from the outside air introduction part 59 is supplied to the heat treatment space 65.
Of the first straightening plate 54
A substantially uniform air flow can be formed along the surface on the side of the heating plate 41, and local temperature deviation of the substrate G and the heating plate 41 caused by deviation of the air flow can be effectively prevented.

Further, by forming the airflow using the first rectifying plate 54 as described above, the outside air is supplied to the first rectifying plate 5.
Hot plate 41 after being heated in the gap between
Side, the thermal influence of the outside air on the substrate G and the hot plate 41 can be reduced.

Further, since the second rectifying plate 55 is disposed so as to face the opening 53 of the first rectifying plate 54, the opening 5
The airflow is prevented from being disturbed near 3 and the opening 53 is prevented from adversely affecting the temperature distribution of the substrate G and the hot plate 41.

Next, a second embodiment of the present invention will be described. In the heat treatment unit (HP) to which the heat treatment apparatus according to the present embodiment is applied, as shown in FIG. 9, the liquid 71 is configured to be stored along the inner periphery of the shutter 48, and the rising of the shutter 48 is performed. Sometimes, the projection 75 provided on the outer periphery of the reflection plate 42 sinks into the liquid 71, and the shutter 48 and the reflection plate 42 are separated by the projection 75 and the liquid 71.
And is sealed. Even with such a configuration, the space between the shutter 48 and the reflection plate 42 can be sufficiently sealed, and intrusion of outside air from this portion can be prevented. Also, a through hole 43 provided in the hot plate 41 is provided.
A shaft sealing member is interposed between the
The space between the through hole 43 and the support pin 44 may be sealed.

Next, a third embodiment of the present invention will be described. FIG. 10 is a schematic sectional view of a heat treatment unit (HP) to which the heat treatment apparatus according to the present embodiment is applied. In the present embodiment, the heat treatment is performed while changing the amount of exhaust gas so that the amount of exhaust gas from the heat treatment space can be changed.

As shown in FIG. 10, this heat treatment unit (HP) has the same basic structure as the heat treatment unit according to the first embodiment, but in this embodiment, the second rectifying plate 155 is provided. It is configured to be able to move up and down by an elevating mechanism 156, which is different from the first embodiment in this point. By raising and lowering the second rectifying plate 155 by the elevating mechanism 156, the distance between the first rectifying plate 54 and the second rectifying plate 155 can be changed, thereby adjusting the amount of exhaust air from the opening 53. be able to. That is, the second current plate 15
5, the distance between the first rectifying plate 54 and the second rectifying plate 155 can be increased to increase the displacement, and the first rectifying plate 155 can be raised by raising the second rectifying plate 155. The distance between the plate 54 and the second rectifying plate 155 can be reduced to reduce the displacement. Further, the exhaust from the opening 53 can be stopped by raising the second current plate 155 to a position where the opening 53 is closed.

With such a configuration, for example, the amount of exhaust gas can be reduced by gradually raising the second rectifying plate 155 as time elapses during the heat treatment. Can be stopped. In such a process, the resist sublimate can be discharged out of the heat treatment space by the exhaust at the start of the heat treatment, and
At the time when the resist sublimate is almost completely discharged out of the heat treatment space after a predetermined period of time, the amount of the substrate G can be efficiently reduced without being affected by the airflow generated in the heat treatment space by reducing or stopping the exhaust amount. Heat treatment can be performed.

Next, a fourth embodiment of the present invention will be described. FIG. 11 is a schematic cross-sectional view of a heat treatment unit (HP) to which the heat treatment apparatus according to the present embodiment is applied, and FIG. 12 is an enlarged top view of the second current plate 255.

As shown in FIG. 11, this heat treatment unit (HP) has the same basic structure as the heat treatment unit according to the first embodiment, and also has the first current plate 255 of the second current plate 255.
Of the plurality of (eight in the figure) plate-like bodies 2
53 are provided radially. With such a structure, it is possible to reduce the bias of the heat exhaust from the second rectifying plate 255 to the exhaust unit 58, and thereby the surface of the substrate G and the first rectifying plate 54 caused by the bias of the airflow are reduced. It is possible to reduce the thermal effect to be received. From such a viewpoint, for example, as shown in FIG.
A plate-like body 253 'having a structure in which the height gradually increases toward the center portion of the second straightening plate 255 may be provided as shown in FIGS. Four plate-like bodies 25 radially arranged so as to intersect with each other
3 ″ may be provided.

Next, a fifth embodiment of the present invention will be described. FIG. 15 is a schematic sectional view of a heat treatment unit (HP) to which the heat treatment apparatus according to the present embodiment is applied. As shown in FIG. 15, this heat treatment unit (H
P) is a heat treatment unit (H) according to the first embodiment.
In the same basic configuration as in P), the upper end of the tubular member 356 is configured to be higher than the bottom of the exhaust portion 358.

In the case where the upper end of the tubular member is formed at the same height as the bottom of the exhaust part as in the above-described embodiment, FIG.
As shown by arrows in FIG. 6 and FIG. 17, a direct airflow is generated from the upper end of the cylindrical member 56 toward the exhaust portion 58, and the temperature of the portion where the airflow contacts locally rises, and the exhaust portion 5
There is a possibility that a thermal bias occurs in the inside of the heat sink. On the other hand, the upper end of the cylindrical member 356 is connected to the exhaust portion 358 as in the present embodiment.
When it is configured to be higher than the bottom of the cylindrical member 356, the exhaust gas that has passed through the inside of the cylindrical member 356 changes its direction in the horizontal direction and flows therethrough. No airflow is generated, and heat bias in the exhaust part 358 can be prevented. In this case, the cylindrical member 35
It is desirable that the upper end of 6 be higher than the center of the exhaust portion 358. On the other hand, if the upper end of the cylindrical member 356 is higher than the uppermost part of the exhaust portion 358, the exhaust pressure loss increases.
It is desirable that the height be equal to or lower than the uppermost part.

Next, a sixth embodiment of the present invention will be described. In the heat treatment unit (HP) to which the heat treatment apparatus according to the present embodiment is applied, by providing a positioning roller for positioning the substrate G on the hot plate 41, the substrate G is accurately positioned to perform the heat treatment. To do.
FIG. 18 is a perspective view of a positioning roller in the present embodiment, FIG. 19 is a plan view showing a position where the positioning roller is disposed on the hot plate 41, and FIG. It is an explanatory view for explaining operation.

As shown in FIG. 18, the positioning roller 400 is provided with a roller 401 and a guide 402 for guiding the position of the substrate G at a lower portion, and a support 403 for rotatably supporting the roller 401. FIG.
As shown in (1), two positions are arranged at positions corresponding to the four corners of the substrate G arranged on the hot plate 41, that is, at eight positions in total.

According to such a configuration, the substrate G is
1 can be accurately arranged at a predetermined position. That is, when the substrate G is accurately transferred to a predetermined position on the support pins 44, the substrate G descends inside the positioning roller 400 and is placed on the hot plate 41 as it is. on the other hand,
In the case where the substrate G is not accurately transferred to a predetermined position on the support pins 44 and a displacement has occurred, one end of the substrate G is placed on the roller 401 of the positioning roller 400 as shown in FIG. The substrate G is dropped on the inside of the positioning roller 400 by the rotation of the roller 401 on which the substrate G is placed by its own weight.
1 at a predetermined position. Further, since the guide 402 is provided below the support body 403, each corner of the substrate G disposed at a predetermined position on the hot plate 41 is guided by the guide 402, thereby being disposed on the hot plate 41. After that, the position of the substrate G is prevented from shifting.

As described above, in the present embodiment, the substrate G can be accurately positioned at a predetermined position on the hot plate 41 by the positioning roller 400, so that the hot plate 41, the first rectifying plate, and the first rectifying plate Opening 53 and a second rectifying plate, etc.,
The positional relationship between the substrate G and the airflow formed in the above-described heat treatment space and the substrate G can be made desired, and the temperature distribution of the substrate G can be further improved. .

The present invention is not limited to the above embodiment, but can be variously modified. For example, in the above embodiment,
Although the example in which the heating apparatus according to the present invention is applied to the heat processing unit used in the resist coating / developing processing system has been described, the present invention is not limited to this and may be applied to other processing.
Further, in the above embodiment, the case where the LCD substrate is used as the substrate has been described, but it is needless to say that the present invention is not limited to this, and can be applied to the case of processing other substrates.

[0080]

As described above, according to the present invention, the heat treatment is performed in a state where the heat plate is substantially sealed by the sealing mechanism, so that outside air is prevented from entering from around the heat plate during the heat treatment. In addition to avoiding the variation and instability of the substrate temperature accompanying it, the airflow forming means positively forms an airflow from the outer periphery to the center in the heat treatment space, thereby making it easier to balance the exhaust gas. Therefore, it is possible to prevent a portion where the temperature is locally lowered from being formed, thereby making the temperature of the substrate to be processed uniform. Therefore, it is possible to control the substrate temperature with high accuracy. Further, by forming such an airflow, accumulation of resist sublimate and the like can be prevented.

In this case, the airflow forming means guides the outside air introduced from the outside air introduction portion to the outer peripheral side along the upper surface of the first rectifying plate, and goes from the outer periphery to the center along the lower surface of the first rectifying plate. By forming an airflow and exhausting the air through an opening provided in the center of the first current plate, an airflow from the outer periphery toward the center can be effectively formed in the heat treatment space. The accumulation of the resist sublimate and the like in the space can be prevented very effectively. Further, in such an airflow forming means, by arranging the second rectifying plate so as to face the opening of the first rectifying plate, the airflow in the vicinity of the opening is adjusted, and the adverse effect of the opening on the substrate temperature is prevented. be able to.

Further, in the above-mentioned air flow forming means, the substrate can be efficiently heated by applying a surface treatment having a high reflectivity to the first rectifying plate. By performing a surface treatment with a low reflectance, the uniformity of the substrate temperature can be further improved.

[Brief description of the drawings]

FIG. 1 is a plan view showing an LCD substrate resist coating / developing processing system to which the present invention is applied.

FIG. 2 is a schematic sectional view of a heat treatment unit (HP) to which the heat treatment apparatus according to the first embodiment of the present invention is applied.

FIG. 3 is a diagram of A- of the heat treatment unit (HP) shown in FIG.
The schematic diagram which shows the state which looked at A section from above.

FIG. 4 is a schematic diagram showing a state in which the BB section of FIG. 2 is viewed from above.

5 is a diagram showing a comparison between the shape of a second rectifying plate and the shape of a hot plate in the heat treatment unit (HP) shown in FIG. 2;

FIG. 6 is a schematic cross-sectional view showing a state where the substrate G is being subjected to the heat treatment using the heat treatment unit (HP) shown in FIG.

FIG. 7 is a view showing a state where a hot plate is divided into nine regions 101 to 109.

FIG. 8 is a graph showing the results of measuring the change over time of the hot plate temperature.

FIG. 9 is a view showing a seal mechanism in a heat treatment unit (HP) to which the heat treatment apparatus according to the second embodiment of the present invention is applied.

FIG. 10 is a schematic cross-sectional view of a heat treatment unit (HP) to which a heat treatment device according to a third embodiment of the present invention is applied.

FIG. 11 is a schematic sectional view of a heat treatment unit (HP) to which a heat treatment apparatus according to a fourth embodiment of the present invention is applied.

FIG. 12 is an enlarged top view of a second current plate in the heat processing unit (HP) shown in FIG. 11;

FIG. 13 is a view showing another example of the plate-like body in the second current plate shown in FIG. 12;

FIG. 14 is a view showing still another example of the plate-like body in the second current plate shown in FIG. 12;

FIG. 15 is a schematic sectional view of a heat treatment unit (HP) to which the heat treatment apparatus according to the fifth embodiment is applied.

FIG. 16 is a vertical cross-sectional view for explaining an air flow generated when the upper end of the cylindrical member is formed at the same height as the bottom of the exhaust unit.

FIG. 17 is a cross-sectional view for explaining an airflow generated when the upper end of the cylindrical member is formed at the same height as the bottom of the exhaust unit.

FIG. 18 is a perspective view of a positioning roller according to a sixth embodiment.

FIG. 19 is a plan view showing a position where a positioning roller is arranged on a hot plate 41 in the sixth embodiment.

FIG. 20 is an explanatory diagram for explaining an operation when a substrate G is positioned by a positioning roller according to a sixth embodiment.

[Explanation of symbols]

 40: HP 41: Hot plate 42: Reflector plate 43: Through hole 44: Support pin 45: Second engaging member 46: Holding member 47: Holding member elevating mechanism 48: Shutter (surrounding member) 49: Shutter elevating mechanism ( Surrounding member elevating mechanism) 50: Elastic member 51: First engaging member 53: Opening 54: First rectifying plate 55: Second rectifying plate 56: Cylindrical member 56a: Gap 57: Cover member 57a: Hole 58: exhaust part 58a: exhaust pipe 59: outside air introduction part 60: case 61: first contact member 63: second contact member 64: elastic member 66: duct member 66a: upper part 66b: lower part 71: liquid 75 ： Protrusion 76 ： Exhaust mechanism

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor, Masato Kubo 272, Heisei, Takao, Otsucho, Kikuchi-gun, Kumamoto Prefecture 4 Tokyo Electron Limited Otsu Office

Claims (19)

[Claims] A substrate to be processed is placed on or above the substrate, and a heating plate for heating the substrate to be processed and a heating processing space for heating the substrate to be processed defined above the heating plate can be surrounded. An enclosing member, a sealing mechanism for substantially sealing the periphery of the heating plate when the heating processing space is surrounded by the enclosing member, and an airflow forming an airflow from the outer periphery toward the center in the heating processing space. And a heating means. 2. The air flow forming means is provided above the heat treatment space, and an outside air introduction unit for introducing outside air into the heat treatment space; and the air flow forming means is provided above the heat treatment space, and An exhaust unit for exhausting the space, an exhaust mechanism for exhausting the heat treatment space through the exhaust unit, and an upper part of the heat treatment space disposed so as to face the hot plate, and an opening in the center thereof. And a first rectifying plate formed, and when the exhaust mechanism is operated, the outside air introduced from the outside air introducing portion is supplied along the upper surface of the first rectifying plate to the outer periphery of the heat treatment space. Side, further from the outer peripheral side of the heat treatment space to the center along the lower surface of the first rectifying plate, and is exhausted from the exhaust unit through the opening of the first rectifying plate. The heat treatment apparatus according to claim 1. 3. The heat treatment apparatus according to claim 2, wherein the first rectifying plate has a surface finish having a high reflectivity on a surface on a side of the hot plate. 4. The airflow forming means includes a second straightening plate disposed between the first straightening plate and the hot plate so as to face an opening formed in the straightening plate. The heat treatment apparatus according to claim 2, wherein: 5. The heat treatment apparatus according to claim 4, wherein the surface of the second rectifying plate on the side of the hot plate has a low-reflectance surface finish. 6. The plate according to claim 4, wherein a plurality of plate members are radially provided on a surface of the second current plate on the first current plate side. Heat treatment equipment. 7. The heat treatment according to claim 4, wherein the second current plate is provided so as to be movable in a thickness direction of the substrate to be processed. apparatus. 8. The heat treatment apparatus according to claim 4, wherein the second current plate has a shape substantially similar to the hot plate. 9. The heat treatment apparatus according to claim 4, wherein the second current plate has a shape substantially similar to the opening. 10. The apparatus according to claim 4, wherein the opening has a shape substantially similar to that of the hot plate.
The heat treatment apparatus according to any one of the above. 11. The heat treatment apparatus according to claim 1, wherein the surrounding member is arranged so as to be able to move up and down, and surrounds the heat treatment space when ascending. 12. The apparatus according to claim 12, further comprising a cover member that covers an upper part of the heat treatment space, wherein the sealing mechanism closes a gap below the hot plate and a gap between the cover member and the surrounding member. The heat treatment apparatus according to any one of claims 1 to 11, wherein 13. The apparatus according to claim 1, further comprising a reflector disposed so as to cover a lower surface and a side surface of the hot plate and reflecting heat from the hot plate, wherein the sealing mechanism includes a gap between the reflector and the surrounding member. The heat treatment apparatus according to claim 12, wherein the heat treatment apparatus is closed. 14. A pair of engaging members disposed on an outer peripheral side of the reflection plate and a lower part on an inner peripheral side of the surrounding member, wherein the sealing mechanism engages with each other when the surrounding member is raised. A cover member lower part and the surrounding member upper part,
The heat treatment apparatus according to claim 13, further comprising a pair of contact members that come into contact with each other when the surrounding member is raised. 15. An elastic member is disposed on at least one of the pair of engaging members at a position where the elastic member is engaged with the other engaging member. The heat treatment device according to claim 14, wherein an elastic member is disposed at a position where the elastic member is in contact with the contact member. 16. A substrate to be processed is disposed on or above the substrate, and a heating plate for heating the substrate to be processed and a heat treatment space for heating the substrate to be processed defined above the heating plate can be surrounded. A surrounding member provided on the heating processing space, and a cover member that covers an upper part of the heating processing space. When the heating processing space is surrounded by the surrounding member,
A sealing mechanism for closing a gap between the hot plate and the surrounding member and a gap between the cover member and the surrounding member; and an outside air introduction provided at an outer central portion of the cover member for introducing outside air. And a duct member having an exhaust portion for exhausting the heat treatment space, an exhaust mechanism for exhausting the heat treatment space via the exhaust portion, and an upper portion of the heat treatment space facing the hot plate. And a first rectifying plate having an opening formed in the center thereof, and when the exhaust mechanism is operated, the outside air introduced from the outside air introducing portion is provided on the upper surface of the first rectifying plate. Along the outer peripheral side of the heat treatment space, further from the outside of the heat treatment space to the center along the lower surface of the first current plate,
A heat treatment apparatus wherein the air is exhausted from an exhaust part of the duct member through an opening of the first current plate. 17. The air conditioner further comprising a second current plate disposed between the first current plate and the hot plate so as to face an opening formed in the first current plate. When the mechanism is operated, the air from the heat treatment space is
Through the gap between the current plate and the second current plate.
The heat treatment apparatus according to claim 16, wherein the heat treatment apparatus flows to an opening of the current plate. 18. The duct member has a tubular member connected to the heat treatment space at the center thereof, and air from the heat treatment space is exhausted from the exhaust part through the tubular member, and the outside air is introduced. 18. The heat treatment apparatus according to claim 16, wherein the air introduced from the section is supplied to the heat treatment space through the outside of the tubular member. 19. A flow path is formed between the cover member and the first rectifying plate, and outside air introduced from the outside air introduction section reaches the heat treatment space through the flow path. 19. Any one of claims 11 to 18, characterized in that:
Item 2. The heat treatment apparatus according to item 1.