JP2001189199A - Ion generator and charge removal equipment - Google Patents
Ion generator and charge removal equipmentInfo
- Publication number
- JP2001189199A JP2001189199A JP2000297117A JP2000297117A JP2001189199A JP 2001189199 A JP2001189199 A JP 2001189199A JP 2000297117 A JP2000297117 A JP 2000297117A JP 2000297117 A JP2000297117 A JP 2000297117A JP 2001189199 A JP2001189199 A JP 2001189199A
- Authority
- JP
- Japan
- Prior art keywords
- discharge electrode
- tip
- electrode
- ion generator
- discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/248—Components associated with high voltage supply
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Elimination Of Static Electricity (AREA)
Abstract
(57)【要約】
【課題】 放電極の劣化が少なく,しかもノイズやオゾ
ンの発生も抑制可能な,イオン発生装置と帯電除去設備
を提供する。
【解決手段】 針状の放電極12と導電性の対極13を
備え,放電極12に交流高電圧を印加してコロナ放電に
より放電極12周辺の空気をイオン化させる。少なくと
も放電極12の先端12”がシリコン単結晶で構成さ
れ,放電極12の先端12”と対極13との最短距離L
が0.4cm以上4cm以下であり,放電極12に印加
される交流高電圧の実効値Vが8kV以下であり,かつ
1.8L(cm)+0.5<V(kV)<2.8L(c
m)+1.0である。
(57) [Problem] To provide an ion generator and a charge removal device capable of suppressing deterioration of a discharge electrode and suppressing generation of noise and ozone. SOLUTION: A needle-shaped discharge electrode 12 and a conductive counter electrode 13 are provided, and an AC high voltage is applied to the discharge electrode 12 to ionize air around the discharge electrode 12 by corona discharge. At least the tip 12 ″ of the discharge electrode 12 is made of silicon single crystal, and the shortest distance L between the tip 12 ″ of the discharge electrode 12 and the counter electrode 13.
Is 0.4 cm or more and 4 cm or less, the effective value V of the AC high voltage applied to the discharge electrode 12 is 8 kV or less, and 1.8 L (cm) +0.5 <V (kV) <2.8 L ( c
m) +1.0.
Description
【0001】[0001]
【発明の属する技術分野】本発明は,コロナ放電により
空気をイオン化させるイオン発生装置に関し,更にこの
イオン発生装置を用いた帯電除去設備に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion generator for ionizing air by corona discharge, and further relates to a charge removing facility using the ion generator.
【0002】[0002]
【従来の技術】例えば半導体の製造などに用いられるク
リーンルーム等の清浄空間では,オペレータやロボッ
ト,種々の製造装置などの周辺の清浄度はクラス100
レベル(1ft3当たりの空間に含まれる粒子径が0.
5μm以上の粒子個数が100個以下の清浄度)であ
り,クリーンルーム雰囲気全体で平均化してもクラス
0.1〜1が限界となる。しかし,クラス1(0.5μ
m基準)の雰囲気中において,例えば1GbitDRA
Mの最小寸法の1/3に対応する0.06μm以上の粒
子が8インチウエハ上に付着する個数を見積もると,ウ
エハの帯電がない状態では1〜2個/hrであるが,ウ
エハが100Vに帯電している状態では20〜30個/
hr程度となってしまう。そこで,近年のギガビット時
代では,特に半導体やLCD(Liquid Crys
tal Display),HDD(Hard Dis
k Drive)等を製造するクリーンルームなどにお
いて,製品表面の微粒子付着を防止する方策の一つとし
て,製品やその周辺の帯電を除去することが行われてい
る。2. Description of the Related Art For example, in a clean space such as a clean room used for manufacturing semiconductors, the degree of cleanliness of operators, robots, various types of manufacturing equipment and the like is class 100.
Level (the particle size contained in the space per 1 ft 3 is 0.
The cleanliness of particles having a particle size of 5 μm or more is 100 or less). However, class 1 (0.5μ
m standard) atmosphere, for example, 1 Gbit DRA
Estimating the number of particles of 0.06 μm or more corresponding to 1 / of the minimum dimension of M on an 8-inch wafer is 1 to 2 / hr in a state where the wafer is not charged. 20 to 30 pieces /
hr. Therefore, in the recent gigabit era, especially in semiconductors and LCDs (Liquid Crystals).
tal Display), HDD (Hard Dis
2. Description of the Related Art In a clean room or the like for manufacturing k Drive) or the like, as one of measures for preventing the adhesion of fine particles on a product surface, removal of a charge on a product and its periphery is performed.
【0003】従来より,このような帯電除去を目的とし
て,例えば本発明者らが特許公報第2541857号に
開示したような,コロナ放電により空気をイオン化させ
るイオン発生装置が用いられており,このようなイオン
発生装置によって発生させた正と負の空気イオンを半導
体等の製品に供給して,帯電を除去している。この特許
公報第2541857号に示したように,イオンの発生
方法には,放電極にPulsed−DC電圧を印加する
方法と,DC電圧を印加する方法と,AC電圧を印加す
る方法が知られている。Conventionally, an ion generator for ionizing air by corona discharge has been used for the purpose of such charge removal, as disclosed, for example, in Japanese Patent Publication No. 2541857 by the present inventors. The positive and negative air ions generated by the various ion generators are supplied to products such as semiconductors to remove the charge. As disclosed in Japanese Patent No. 2541857, there are known ion generation methods including a method of applying a Pulsed-DC voltage to a discharge electrode, a method of applying a DC voltage, and a method of applying an AC voltage. I have.
【0004】一方,コロナ放電を利用したイオン発生装
置では,コロナ放電時の表面酸化とスパッタリング現象
によって,放電極から金属粒子が発生し,金属汚染を起
こす。そこで前述の特許公報第2541857号では,
放電極を石英ガラスで被覆することにより,そのような
発塵の防止をはかっている。また放電極自体を半導体材
料と同じ成分の多結晶シリコンで構成することにより,
放電極が劣化して飛散しても,化学的汚染とならないよ
うにする方法も知られている。On the other hand, in an ion generator utilizing corona discharge, metal particles are generated from the discharge electrode due to surface oxidation and sputtering phenomenon during corona discharge, causing metal contamination. Therefore, in the above-mentioned Patent Publication No. 2541857,
By covering the discharge electrode with quartz glass, such dust generation is prevented. Also, by constructing the discharge electrode itself with polycrystalline silicon of the same component as the semiconductor material,
There is also known a method for preventing chemical contamination even if the discharge electrode is deteriorated and scattered.
【0005】[0005]
【発明が解決しようとする課題】しかし放電極を石英ガ
ラスで被覆した場合,印加電圧を8kV以上にすること
が必要であり,電磁輻射ノイズが発生してしまう。特に
近年の高集積化が進んだ電子デバイスや電子システムは
外部からの電磁輻射ノイズに弱く,発生した電磁輻射ノ
イズによって電子デバイスの静電気破壊や特性劣化,電
子システムの誤動作等の電磁ノイズ障害が生じる。また
放電極への印加電圧が高くなると,オゾンの発生といっ
た問題も生ずる。オゾンは反応性に富むため,HDDや
LCDなどといった半導体の製造には好ましくない。However, when the discharge electrode is covered with quartz glass, the applied voltage needs to be 8 kV or more, and electromagnetic radiation noise is generated. In particular, electronic devices and electronic systems that have been highly integrated in recent years are vulnerable to external electromagnetic radiation noise, and the generated electromagnetic radiation noise causes electromagnetic noise disturbances such as electrostatic breakdown of electronic devices, deterioration of characteristics, and malfunction of electronic systems. . In addition, when the voltage applied to the discharge electrode increases, a problem such as generation of ozone also occurs. Ozone is not suitable for manufacturing semiconductors such as HDDs and LCDs because of its high reactivity.
【0006】また一方,放電極自体を多結晶シリコンで
構成した場合は,結晶粒界に沿って起こる粒界すべりや
粒界割れなどにより,放電極が激しく劣化し発塵の原因
となる。On the other hand, when the discharge electrode itself is made of polycrystalline silicon, the discharge electrode deteriorates violently due to grain boundary sliding or grain boundary cracks occurring along crystal grain boundaries, causing dust generation.
【0007】従って本発明の目的は,放電極の劣化が少
なく,しかも電磁輻射ノイズやオゾンの発生も抑制可能
な,イオン発生装置と帯電除去設備を提供することにあ
る。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide an ion generator and a charge removing device capable of suppressing deterioration of a discharge electrode and suppressing generation of electromagnetic radiation noise and ozone.
【0008】[0008]
【課題を解決するための手段】この目的を達成するため
に,請求項1にあっては,針状の放電極と導電性の対極
を備え,放電極に交流高電圧を印加してコロナ放電によ
り放電極周辺の空気をイオン化させるイオン発生装置で
あって,少なくとも放電極の先端がシリコン単結晶で構
成され,放電極の先端と対極との最短距離Lが0.4c
m以上4cm以下であり,放電極に印加される交流高電
圧の実効値Vが8kV以下であり,かつ1.8L(c
m)+0.5<V(kV)<2.8L(cm)+1.0
であることを特徴としている。In order to achieve this object, a first aspect of the present invention comprises a needle-shaped discharge electrode and a conductive counter electrode, and a high AC voltage is applied to the discharge electrode to perform corona discharge. An ion generator for ionizing the air around the discharge electrode by using a silicon single crystal at least at the tip of the discharge electrode, and the shortest distance L between the tip of the discharge electrode and the counter electrode is 0.4c.
m to 4 cm, the effective value V of the AC high voltage applied to the discharge electrode is 8 kV or less, and 1.8 L (c
m) +0.5 <V (kV) <2.8 L (cm) +1.0
It is characterized by being.
【0009】この請求項1のイオン発生装置において,
針状の放電極は,導電性のある金属などの材料からな
り,一例として円柱形状からなる放電極の先端部分をテ
ーパーの円錐形状に形成した針状の形状を有している。
放電極の先端とは,針状に形成された放電極の頂点であ
り,このように放電極の先端部分が錐形状に形成されて
いる場合,放電極の先端は錐形状の頂点である。コロナ
放電は針状の放電極の先端で生じるので,少なくとも放
電極の先端はシリコン単結晶で構成されている。単結晶
シリコンは,シリコンが共有結合して周期的に規則正し
く配列されたダイヤモンド構造を有し,非晶質シリコン
や多結晶シリコンなどに比べて硬度が非常に大きく,強
靱で機械的強度に優れる。このため,単結晶シリコン
は,非晶質シリコンや多結晶シリコンなどに比べて発塵
が極めて少ない。対極は,例えば導電性のある金属板な
どに円や角形などの形状の孔を形成した構成を有する。
また対極は,導電性素材からなる線,格子,リングなど
の構成であっても良い。In the ion generator according to the first aspect,
The needle-shaped discharge electrode is made of a material such as a conductive metal, and has, for example, a needle-like shape in which a tip portion of a cylindrical discharge electrode is formed in a tapered conical shape.
The tip of the discharge electrode is a vertex of the needle-shaped discharge electrode. When the tip of the discharge electrode is formed in a conical shape, the tip of the discharge electrode is a vertex of a cone shape. Since corona discharge occurs at the tip of the needle-shaped discharge electrode, at least the tip of the discharge electrode is made of silicon single crystal. Single crystal silicon has a diamond structure in which silicon is covalently bonded and regularly arranged in a regular manner, and has extremely high hardness, toughness, and excellent mechanical strength as compared with amorphous silicon or polycrystalline silicon. For this reason, single-crystal silicon generates much less dust than amorphous silicon or polycrystalline silicon. The counter electrode has, for example, a configuration in which a hole having a circular or square shape is formed in a conductive metal plate or the like.
Further, the counter electrode may have a configuration such as a line, a grid, or a ring made of a conductive material.
【0010】放電極の先端と対極との最短距離Lは0.
4cm以上4cm以下とする。放電極に交流電圧を印加
してコロナ放電を発生させる場合,放電極への印加電圧
が一定であれば,放電極先端と対極との最短距離Lが小
さいほど,コロナ放電の強さは大きくなる。最短距離L
が4cmを越えると,充分な強さのコロナ放電が起きな
くなってしまう。一方,最短距離Lが0.4cmより小
さいと,放電極の先端のコロナ放電で発生した空気イオ
ンは,放電極の先端と対極との間に形成される電界の作
用で,大部分が対極に吸収されてしまい,気流で搬出す
ることが不可能になる。最短距離Lが0.4cm以上4
cm以下であれば,気流で搬出できるイオン量も増加
し,帯電体の除電が可能となる。The shortest distance L between the tip of the discharge electrode and the counter electrode is 0.
4 cm or more and 4 cm or less. When an AC voltage is applied to the discharge electrode to generate corona discharge, if the applied voltage to the discharge electrode is constant, the shorter the shortest distance L between the tip of the discharge electrode and the counter electrode, the greater the intensity of the corona discharge. . Shortest distance L
If it exceeds 4 cm, corona discharge of sufficient strength will not occur. On the other hand, when the shortest distance L is smaller than 0.4 cm, most of the air ions generated by the corona discharge at the tip of the discharge electrode become the counter electrode due to the action of the electric field formed between the tip of the discharge electrode and the counter electrode. It will be absorbed, making it impossible to carry it out by airflow. Minimum distance L is 0.4cm or more 4
cm or less, the amount of ions that can be carried out by an air current also increases, and charge removal of the charged body becomes possible.
【0011】放電極に印加される交流高電圧の実効値V
は8kV以下で,1.8L(cm)+0.5<V(k
V)<2.8L(cm)+1.0とする。放電極に印加
される交流高電圧の実効値Vが1.8L(cm)+0.
5よりも小さくては,コロナ放電が発生しない。一方,
放電極に印加する交流電圧の実効値V(kV)が2.8
L(cm)+1.0の値を越えると,コロナ放電の強さ
が大きすぎて,コロナ放電の際に発生する微量のオゾン
による表面酸化と空気イオンによるスパッタリング現象
で放電極の先端部分が劣化し,発塵してしまう。交流高
電圧の実効値V(kV)がV<2.8L+1.0の範囲
にあり,かつ8kV以下であれば,オゾン発生もほぼ1
0volppb以下に抑制することが可能となる。The effective value V of the AC high voltage applied to the discharge electrode
Is 8 kV or less, and 1.8 L (cm) +0.5 <V (k
V) <2.8 L (cm) +1.0. The effective value V of the AC high voltage applied to the discharge electrode is 1.8 L (cm) +0.
If it is smaller than 5, no corona discharge occurs. on the other hand,
The effective value V (kV) of the AC voltage applied to the discharge electrode is 2.8.
If the value exceeds L (cm) +1.0, the strength of the corona discharge is too large, and the tip of the discharge electrode deteriorates due to surface oxidation caused by a small amount of ozone generated during the corona discharge and sputtering caused by air ions. And generate dust. If the effective value V (kV) of the AC high voltage is in the range of V <2.8 L + 1.0 and is 8 kV or less, ozone generation is almost 1
It can be suppressed to 0 volppb or less.
【0012】この請求項1のイオン発生装置において,
請求項2に記載したように,交流高電圧の周波数は20
Hz以上100kHz以下であることが好ましい。10
0kHzを越える周波数では,正と負のイオンが結合・
中和して消滅する度合いが著しく,100kHz以下と
比較して,帯電物の除電時間も大幅に長くかかってしま
う。一方,周波数をあまり小さくすると,正負イオンの
結合の割合は低下する代わりに,正と負のイオンの大き
な塊が交互に帯電表面に到達することになる。20Hz
未満の周波数では,帯電表面が除電された後も,その表
面電位は正と負のイオンが到達する度に正と負の数十ボ
ルトの電位を交互に繰り返す。近年のLSI,LCD,
HDDは数十ボルトの表面電位の変動で破壊されること
もあることから,20Hz未満の周波数では,かえって
製品歩留まりを低下することにもなりかねない。In the ion generator according to the first aspect,
As described in claim 2, the frequency of the AC high voltage is 20
It is preferable that the frequency be equal to or higher than 100 kHz. 10
At frequencies above 0 kHz, positive and negative ions combine.
The degree of neutralization and extinction is remarkable, and the charge elimination time of the charged material is much longer than that of 100 kHz or less. On the other hand, if the frequency is too low, the ratio of positive and negative ion bonds will decrease, but large clusters of positive and negative ions will alternately reach the charged surface. 20Hz
At frequencies below, even after the charged surface has been neutralized, its surface potential alternates between positive and negative tens of volts each time positive and negative ions arrive. Recent LSI, LCD,
Since the HDD may be destroyed by the fluctuation of the surface potential of several tens of volts, the frequency lower than 20 Hz may lower the product yield.
【0013】また請求項3に記載したように,放電極の
先端の曲率半径は,0.1mm〜0.4mmであること
が好ましい。放電極先端の曲率半径が0.1mmよりも
小さいと,放電極先端の劣化と発塵が著しくなる。一
方,放電極先端の曲率半径が0.4mmよりも大きい
と,放電極先端の劣化は抑制されるがコロナ放電そのも
のが起こりにくくなるため,イオン発生装置として機能
が劣る心配がある。[0013] As described in the third aspect, the radius of curvature of the tip of the discharge electrode is preferably 0.1 mm to 0.4 mm. If the radius of curvature at the tip of the discharge electrode is smaller than 0.1 mm, the tip of the discharge electrode is significantly deteriorated and dusted. On the other hand, if the radius of curvature of the tip of the discharge electrode is larger than 0.4 mm, the deterioration of the tip of the discharge electrode is suppressed, but corona discharge itself is less likely to occur, and there is a concern that the function as an ion generator may be poor.
【0014】請求項4によれば,請求項1又は2のイオ
ン発生装置を流速が0.2m/s以上1.0m/s以下
の清浄空気の流れの中に配置し,かつ,放電極を前記清
浄空気の流れを横切る方向に二次元的な広がりを持って
複数配置したことを特徴とする,帯電除去設備が提供さ
れる。According to a fourth aspect, the ion generator according to the first or second aspect is arranged in a flow of clean air having a flow velocity of 0.2 m / s or more and 1.0 m / s or less, and the discharge electrode is provided. There is provided a static elimination device, wherein a plurality of the devices are arranged with a two-dimensional spread in a direction crossing the flow of the clean air.
【0015】また請求項5によれば,請求項1又は2の
イオン発生装置の放電極の少なくとも先端に,流速10
m/s以上の清浄空気の気流を供給する構成としたこと
を特徴とする,帯電除去設備が提供される。According to a fifth aspect of the present invention, at least a tip of the discharge electrode of the ion generator according to the first or second aspect has a flow rate of 10 or less.
The present invention provides a static elimination facility characterized in that it is configured to supply a stream of clean air of m / s or more.
【0016】[0016]
【発明の実施の形態】以下,本発明の好ましい実施の形
態を図面を用いて説明する。図1は,本発明の実施の形
態にかかるイオン発生装置1の斜視図であり,図2はイ
オン発生装置1のイオン発生部10の平面図,図3は,
図1におけるA−A断面拡大図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a perspective view of an ion generator 1 according to an embodiment of the present invention, FIG. 2 is a plan view of an ion generator 10 of the ion generator 1, and FIG.
FIG. 2 is an enlarged cross-sectional view taken along line AA in FIG. 1.
【0017】イオン発生装置1のイオン発生部10に
は,棒状の電極支持部材11の両側面に,針状の放電極
12が所定の間隔で複数本取り付けられている。図示の
例では,電極支持部材11の両側面にそれぞれ垂直に突
出するように放電極12が配置されている。また各放電
極12は円柱形状をなし,先端部分12’はテーパーの
円錐形状に形成されている。放電極12は導電性のある
金属などの材料からなり,少なくとも放電極12の先端
12”(円錐形状に形成された先端部分12’の頂点)
はシリコン単結晶で構成されている。なお,放電極12
の先端12”だけをシリコン単結晶で構成しても良い
が,放電極12を容易に製作できるようにするために,
放電極12の先端部分12’を全体的にシリコン単結晶
で構成したり,あるいは放電極12を全体的にシリコン
単結晶で構成することもできる。In the ion generator 10 of the ion generator 1, a plurality of needle-shaped discharge electrodes 12 are attached to both sides of a rod-shaped electrode support member 11 at predetermined intervals. In the illustrated example, the discharge electrodes 12 are arranged on both side surfaces of the electrode support member 11 so as to project vertically. Each discharge electrode 12 has a cylindrical shape, and a tip portion 12 'is formed in a tapered conical shape. The discharge electrode 12 is made of a material such as a conductive metal, and at least the tip 12 ″ of the discharge electrode 12 (the apex of the tip portion 12 ′ formed in a conical shape).
Is made of silicon single crystal. The discharge electrode 12
May be made of silicon single crystal, but in order to make the discharge electrode 12 easy,
The tip portion 12 'of the discharge electrode 12 can be entirely made of silicon single crystal, or the discharge electrode 12 can be entirely made of silicon single crystal.
【0018】ここで,図4(a)〜(c)は,放電極1
2の先端部分12’の形状の拡大図である。図4(a)
に示す放電極12の先端部分12’の形状は,円錐形状
に形成されたテーパー面120の先端12”を球面に構
成した例である。図4(b)に示す放電極12の先端部
分12’の形状は,テーパー面121を,先端12”に
近い側の緩傾斜面122と,先端12”から離れた側の
急傾斜面123によって二段階の傾斜面で構成し,放電
極12の先端12”は球面に構成されている。図4
(c)に示す放電極12の先端部分12’の形状は,テ
ーパー面125を,先端12”に近い側の緩傾斜面12
6と,先端12”から離れた側の急傾斜面127と,そ
れら緩傾斜面126と急傾斜面127の間の中間傾斜面
128によって三段階の傾斜面で構成し,放電極12の
先端12”は球面に構成されている。いずれの場合も,
球面に形成された放電極12の先端12”の曲率半径R
は,0.1mm〜0.4mmの範囲に設定されている。
なお,放電極12の先端12”は4段以上の傾斜面や,
連続的に傾斜角度が変化する曲面で構成しても良い。Here, FIGS. 4A to 4C show discharge electrodes 1.
It is an enlarged view of the shape of 2 front-end | tip parts 12 '. FIG. 4 (a)
Is an example in which the tip 12 ″ of the tapered surface 120 formed in a conical shape is formed into a spherical surface. The tip 12 of the discharge electrode 12 shown in FIG. In the shape of ', the tapered surface 121 is constituted by a two-step inclined surface composed of a gentle inclined surface 122 near the tip 12 "and a steep inclined surface 123 away from the tip 12". 12 "is configured as a spherical surface. FIG.
The shape of the distal end portion 12 'of the discharge electrode 12 shown in (c) is such that the tapered surface 125 is
6 and a steeply inclined surface 127 on the side away from the tip 12 ″, and an intermediate inclined surface 128 between the gentlely inclined surface 126 and the steeply inclined surface 127. "Is a spherical surface. In either case,
Curvature radius R of tip 12 "of discharge electrode 12 formed in a spherical surface
Is set in the range of 0.1 mm to 0.4 mm.
The tip 12 "of the discharge electrode 12 has four or more inclined surfaces,
It may be constituted by a curved surface whose inclination angle changes continuously.
【0019】なお,放電極12や放電極12の先端部分
12’の製作方法は任意であるが,放電極12全体や放
電極12の先端部分12’全体をシリコン単結晶で構成
する場合は,例えばシリコン単結晶インゴットやウェハ
などから適当なシリコン単結晶片を切り出し,このシリ
コン単結晶片を旋盤などを用いて所定の形状の放電極1
2を製作したり,あるいは同様に放電極12の先端部分
12’を製作する方法が例示される。また,放電極12
の先端部分12’をシリコン単結晶で構成した場合,先
端部分12’以外の部分(放電極12における先端部分
12’以外の部分)は必ずしもシリコン単結晶で構成す
る必要はなく,例えばタングステンなどの導電性部材で
先端部分12’以外の部分を構成しても良い。その場
合,例えばセラミックス製やプラスチック製からなるチ
ューブ形状のホルダー内において,タングステンなどの
導電性部材と所定の形状に加工されたシリコン単結晶か
らなる先端部分12’とを導電性のコイルバネなどを介
して電気的に導通させた構成が例示される。The method of manufacturing the discharge electrode 12 and the tip portion 12 'of the discharge electrode 12 is arbitrary. However, when the entire discharge electrode 12 and the whole tip portion 12' of the discharge electrode 12 are made of single crystal silicon, For example, an appropriate silicon single crystal piece is cut out from a silicon single crystal ingot or a wafer, and the silicon single crystal piece is formed into a discharge electrode 1 having a predetermined shape using a lathe or the like.
2 or, similarly, a method of manufacturing the tip portion 12 ′ of the discharge electrode 12. In addition, the discharge electrode 12
Is formed of silicon single crystal, the portion other than the tip portion 12 '(the portion other than the tip portion 12' of the discharge electrode 12) does not necessarily need to be formed of silicon single crystal. A portion other than the tip portion 12 'may be formed by a conductive member. In this case, for example, in a tube-shaped holder made of ceramics or plastic, a conductive member such as tungsten and a tip portion 12 'made of silicon single crystal processed into a predetermined shape are connected via a conductive coil spring or the like. An example of such a configuration is shown in FIG.
【0020】また図1に示すように,電極支持部材11
の前後両側面から離れた位置には,板状の対極13がそ
れぞれ配置してある。このように電極支持部材11の前
後両側面に板状の対極13を設けることにより,イオン
発生部10の上下面は開口した状態になっている。これ
ら対極13は,電極支持部材11の両端に設けられた絶
縁性の支持部材14によって支持されることにより,電
極支持部材11の両側において,いずれも電極支持部材
11と平行に,かつ電極支持部材11と絶縁された状態
で設けられている。対極13は導電性のある金属などの
材料で構成されている。また対極13には,所定の間隔
で円孔15が複数設けられている。これら円孔15の中
心が,各放電極12の中心軸と一致するようにして,各
放電極12に対応する円孔15が対極13にそれぞれ形
成されている。Further, as shown in FIG.
A plate-like counter electrode 13 is arranged at a position away from the front and rear sides. By providing the plate-shaped counter electrodes 13 on both front and rear sides of the electrode support member 11 as described above, the upper and lower surfaces of the ion generator 10 are open. The counter electrodes 13 are supported by insulating support members 14 provided at both ends of the electrode support member 11, so that both sides of the electrode support member 11 are parallel to the electrode support member 11 and are parallel to the electrode support member 11. 11 is provided in an insulated state. The counter electrode 13 is made of a material such as a conductive metal. The counter electrode 13 is provided with a plurality of circular holes 15 at predetermined intervals. The holes 15 corresponding to the discharge electrodes 12 are formed in the counter electrode 13 such that the centers of the holes 15 coincide with the central axes of the discharge electrodes 12.
【0021】そして,放電極12の先端12”と対極1
3との最短距離Lは0.4cm以上4cm以下に設定さ
れている。図示の例では,各放電極12の先端12”
と,対極13に形成された円孔15の内周面との距離で
示される最短距離Lが0.4cm以上4cm以下に設定
されている。The tip 12 "of the discharge electrode 12 and the counter electrode 1
The shortest distance L with respect to 3 is set to 0.4 cm or more and 4 cm or less. In the illustrated example, the tip 12 ″ of each discharge electrode 12
And the shortest distance L indicated by the distance from the inner peripheral surface of the circular hole 15 formed in the counter electrode 13 is set to 0.4 cm or more and 4 cm or less.
【0022】イオン発生部10には,給電部20から所
定の電圧が供給されるようになっている。給電部20
は,プラグ21及びケーブル22を介して電源から供給
される交流電圧の周波数を調節するコントローラ23
と,ケーブル22から供給された交流電圧の一部を取り
出し,所望の直流電圧に変圧して直流側ケーブル24を
介して各対極13にそれぞれ給電する直流トランス25
と,ケーブル22から供給された交流電圧を,所望の交
流電圧に変圧して交流側ケーブル26を介して各放電極
12にそれぞれ給電する交流トランス27を備えてい
る。The ion generator 10 is supplied with a predetermined voltage from a power supply 20. Power supply unit 20
Is a controller 23 for adjusting the frequency of the AC voltage supplied from the power supply via the plug 21 and the cable 22.
And a DC transformer 25 which extracts a part of the AC voltage supplied from the cable 22, transforms the AC voltage into a desired DC voltage, and supplies power to each counter electrode 13 via the DC-side cable 24.
And an AC transformer 27 that transforms the AC voltage supplied from the cable 22 into a desired AC voltage and supplies power to each discharge electrode 12 via the AC-side cable 26.
【0023】コントローラ23は,電源から供給される
交流電圧の周波数を20Hz以上100kHz以下に調
整するように設定されている。そして交流トランス27
で変圧することにより,各放電極12に対して実効値V
が8kV以下で周波数が20Hz以上100kHz以下
の交流高電圧を印加するように設定されている。また,
前述の放電極12の先端12”と対極13との最短距離
L(即ち,各放電極12の先端12”と,対極13に形
成された円孔15の内周面との距離)との関係が,1.
8L(cm)+0.5<V(kV)<2.8L(cm)
+1.0となるように設定されている。The controller 23 is set so as to adjust the frequency of the AC voltage supplied from the power supply to 20 Hz or more and 100 kHz or less. And AC transformer 27
, An effective value V for each discharge electrode 12 is obtained.
Is set to apply an AC high voltage having a frequency of 20 kHz or more and 100 kHz or less. Also,
Relationship between the shortest distance L between the tip 12 "of the discharge electrode 12 and the counter electrode 13 (that is, the distance between the tip 12" of each discharge electrode 12 and the inner peripheral surface of the circular hole 15 formed in the counter electrode 13). But, 1.
8L (cm) +0.5 <V (kV) <2.8L (cm)
It is set to be +1.0.
【0024】直流トランス25は,各対極13に対して
例えば数百ボルト程度の直流電圧を印加するように設定
されており,各放電極12の近傍においてコロナ放電に
より発生する正と負のイオン発生比率を自由に変えるこ
とが可能である。The DC transformer 25 is set to apply a DC voltage of, for example, about several hundred volts to each counter electrode 13, and generates positive and negative ions generated by corona discharge near each discharge electrode 12. The ratio can be changed freely.
【0025】以上のように構成されたイオン発生装置1
のイオン発生部10は,図1に示すように,清浄空気の
流れの中に配置される。この場合,清浄空気の流れの流
速は,0.2m/s以上1.0m/s以下であることが
好ましい。また図1に示すように,開口しているイオン
発生部10の上下面を通じて,清浄空気の流れが流通で
きるように配置することにより,電極支持部材11の両
側面に配置された放電極12や対極13の表面に沿って
清浄空気が流れるように構成する。The ion generator 1 configured as described above
As shown in FIG. 1, the ion generator 10 is disposed in a flow of clean air. In this case, the flow velocity of the flow of the clean air is preferably 0.2 m / s or more and 1.0 m / s or less. As shown in FIG. 1, by disposing the clean air flow through the open upper and lower surfaces of the ion generator 10, the discharge electrodes 12 disposed on both side surfaces of the electrode support member 11 and the discharge electrodes 12. It is configured such that clean air flows along the surface of the counter electrode 13.
【0026】図5は,このイオン発生装置1を用いて構
成した本発明の第1の実施の形態にかかる帯電除去設備
2の模式的な説明図である。上方に配置された高性能フ
ィルタ40を通過して除塵された清浄空気が,0.2m
/s以上1.0m/s以下の流速で,図中において下向
きに供給されている。図示の例では,高性能フィルタ4
0の下方には,先に説明したイオン発生装置1のイオン
発生部10を2箇所に配置している(但し,図5では給
電部20を省略して示している)。高性能フィルタ40
としては,例えばサブミクロン粒子を0.3μmの粒子
に対して99.7%以上の除去性能で捕集できるものを
用い,そのような高性能フィルタ40として,HEPA
(High Efficiency Particul
ateAir)フィルタやULPA(Ultra Lo
w PenetrationAir)フィルタが例示さ
れる。FIG. 5 is a schematic explanatory view of the charge removing equipment 2 according to the first embodiment of the present invention, which is configured by using the ion generator 1. As shown in FIG. The clean air, which has passed through the high-performance filter 40 disposed above and has been cleaned, is 0.2 m
It is supplied downward at a flow rate of not less than 1.0 m / s and not more than 1.0 m / s in the figure. In the illustrated example, the high-performance filter 4
Below 0, the ion generators 10 of the ion generator 1 described above are arranged at two places (however, the power supply unit 20 is omitted in FIG. 5). High-performance filter 40
For example, a filter capable of collecting submicron particles with a removal performance of 99.7% or more with respect to 0.3 μm particles is used.
(High Efficiency Particul
ateAir) filter and ULPA (Ultra Lo)
w PenetrationAir) filter.
【0027】また,2つのイオン発生部10は,いずれ
も互いに同じ高さに平行に並べて配置されている。先に
図1で説明した場合と同様に,イオン発生部10の上下
面を通じて清浄空気の流れが流通できるように2つのイ
オン発生部10を配置することにより,2つのイオン発
生部10に設けられている各放電極12がいずれも同じ
高さとなり,高性能フィルタ40を通じて供給される清
浄空気の流れを横切る方向に二次元的な広がりを持って
各放電極12が配置された状態になっている。The two ion generators 10 are arranged in parallel at the same height. As in the case described above with reference to FIG. 1, the two ion generators 10 are arranged so that the flow of clean air can flow through the upper and lower surfaces of the ion generator 10, so that the two ion generators 10 are provided. Each of the discharge electrodes 12 has the same height, and the discharge electrodes 12 are arranged with a two-dimensional spread in a direction crossing the flow of the clean air supplied through the high-performance filter 40. I have.
【0028】高性能フィルタ40及びイオン発生部10
の下方には,作業台41が配置されている。この作業台
41の上面に,例えば半導体,HDDヘッドなどといっ
た製品42が置かれている。なお図5は模式図であっ
て,帯電除去設備2や作業台41などの大きさやそれら
の間隔などを正しく示すものではない。High-performance filter 40 and ion generator 10
A work table 41 is disposed below the work table. On the upper surface of the work table 41, a product 42 such as a semiconductor or an HDD head is placed. Note that FIG. 5 is a schematic diagram, and does not correctly show the size of the charge removal equipment 2 and the work table 41 and the intervals between them.
【0029】さて以上のように構成された帯電除去設備
2において,高性能フィルタ40を通じて清浄空気を,
0.2m/s以上1.0m/s以下の流速で,下向きに
供給し,開口しているイオン発生部10の上下面を通じ
て,イオン発生部10内に清浄空気を流通させる。そし
て,給電部20(図5では図示せず)により,放電極1
2に対して実効値Vが8kV以下で周波数が20Hz以
上100kHz以下の交流高電圧を印加し,各対極13
に対して例えば数百ボルト程度の直流電圧を印加する。
これにより,イオン発生部10内を流通する際に,放電
極12や対極13の表面に沿って流れる清浄空気が,放
電極12の先端12”の近傍においてコロナ放電により
イオン化される。こうして発生させた正と負の空気イオ
ンは,清浄空気の流れにより更に下向きに流下し,下方
に配置された作業台41の上面に供給されることとな
る。Now, in the static electricity removal equipment 2 configured as described above, clean air is passed through the high-performance filter 40,
The air is supplied downward at a flow rate of 0.2 m / s or more and 1.0 m / s or less, and clean air flows through the ion generating unit 10 through the open upper and lower surfaces of the ion generating unit 10. Then, the discharge electrode 1 is supplied by the power supply unit 20 (not shown in FIG. 5).
An AC high voltage having an effective value V of 8 kV or less and a frequency of 20 Hz or more and 100 kHz or less is applied to
For example, a DC voltage of about several hundred volts is applied.
As a result, when flowing through the ion generator 10, the clean air flowing along the surfaces of the discharge electrode 12 and the counter electrode 13 is ionized by corona discharge near the tip 12 ″ of the discharge electrode 12. The positive and negative air ions flow further downward due to the flow of the clean air, and are supplied to the upper surface of the work table 41 arranged below.
【0030】従って,以上のように構成された帯電除去
設備2によれば,作業台41の上面に置かれた例えば半
導体,HDDヘッドなどといった製品42の帯電を,清
浄空気の流れに載せて供給される正と負の空気イオンに
より除去することが可能となる。Therefore, according to the charge removing device 2 configured as described above, the charge of the product 42 such as a semiconductor or an HDD head placed on the upper surface of the work table 41 is supplied in a flow of clean air. It can be removed by the positive and negative air ions.
【0031】次に図6は,本発明の第2の実施の形態に
かかる帯電除去設備3を説明するための,帯電除去設備
3の断面図である。この実施の形態では,硬質塩化ビニ
ール素材からなるケーシング30の下面に,円筒状のガ
イド壁31が所定の間隔で複数設けられており,各ガイ
ド壁31の下端は開口している。またケーシング30の
側面には,清浄空気の導入孔32が形成されている。ガ
イド壁31下端と導入孔32を除いてはケーシング30
は密閉されており,導入孔32からケーシング30内に
導入された清浄空気が,ガイド壁31から下方に向かっ
て噴出するようになっている。Next, FIG. 6 is a sectional view of the charge removing equipment 3 for explaining the charge removing equipment 3 according to the second embodiment of the present invention. In this embodiment, a plurality of cylindrical guide walls 31 are provided at predetermined intervals on the lower surface of a casing 30 made of a hard vinyl chloride material, and the lower ends of the respective guide walls 31 are open. Further, a clean air introduction hole 32 is formed on a side surface of the casing 30. Except for the lower end of the guide wall 31 and the introduction hole 32, the casing 30
Is sealed so that clean air introduced into the casing 30 from the introduction hole 32 is ejected downward from the guide wall 31.
【0032】ケーシング30の内部上面には支持部材3
3が設けられており,この支持部材33の下面には,針
状の放電極34が所定の間隔で複数本取り付けられてい
る。図示の例では,放電極34は支持部材33の下面か
ら鉛直下向きに突出するように配置されており,円筒状
をなす各ガイド壁31の中心軸と各放電極34の中心軸
はそれぞれ一致している。これにより,前述のように導
入孔32からケーシング30内に導入されガイド壁31
から下方に向かって噴出する清浄空気が,各放電極34
の表面に沿って流れるようになっている。そして,導入
孔32からケーシング30内に導入される清浄空気の流
量を調整することにより,放電極34の少なくとも先端
34”に,流速10m/s以上の清浄空気の気流が供給
されるように設定されている。先に図1で説明したイオ
ン発生装置1と同様に,各放電極34は円柱形状をな
し,各放電極34の先端部分34’はテーパーの円錐形
状に形成されており,また放電極34は導電性のある金
属などの材料からなり,少なくとも放電極34の先端3
4”(円錐形状に形成された先端部分34’の頂点)は
シリコン単結晶で構成されている。更に,先に図4で説
明した場合と同様に,放電極34の先端34”は球面に
形成され,先端34”の曲率半径は,0.1mm〜0.
4mmの範囲に設定されている。The support member 3 is provided on the inner upper surface of the casing 30.
The support member 33 is provided with a plurality of needle-like discharge electrodes 34 at predetermined intervals. In the illustrated example, the discharge electrode 34 is disposed so as to project vertically downward from the lower surface of the support member 33, and the central axis of each cylindrical guide wall 31 and the central axis of each discharge electrode 34 coincide with each other. ing. Thereby, the guide wall 31 is introduced into the casing 30 from the introduction hole 32 as described above.
The clean air spouting downward from the discharge electrodes 34
It flows along the surface of the. Then, by adjusting the flow rate of the clean air introduced into the casing 30 from the introduction hole 32, a setting is made such that the clean air flow having a flow velocity of 10 m / s or more is supplied to at least the tip 34 ″ of the discharge electrode 34. Each discharge electrode 34 has a columnar shape, and a tip portion 34 'of each discharge electrode 34 is formed in a tapered conical shape, similarly to the ion generator 1 described above with reference to FIG. The discharge electrode 34 is made of a material such as a conductive metal.
4 ″ (the apex of the tip portion 34 ′ formed in a conical shape) is made of silicon single crystal. Further, as in the case described above with reference to FIG. The radius of curvature of the tip 34 "is 0.1 mm to 0.1 mm.
It is set in a range of 4 mm.
【0033】ガイド壁31の外側には,リング状の対極
35がそれぞれ配置してある。各対極35の中心が,各
放電極34の中心軸と一致するようにそれぞれ配置され
ている。また図示はしないが,先に図1で説明したイオ
ン発生装置1と同様に,各放電極34に対して実効値V
が8kV以下で周波数が20Hz以上100kHz以下
の交流高電圧を印加し,各対極35に対して例えば数百
ボルト程度の直流電圧を印加することにより,各放電極
34の近傍においてコロナ放電により発生する正と負の
イオン発生比率を自由に変えることができるように構成
されている。A ring-shaped counter electrode 35 is disposed outside the guide wall 31. Each counter electrode 35 is arranged such that the center thereof coincides with the central axis of each discharge electrode 34. Although not shown, the effective value V is applied to each discharge electrode 34 as in the ion generator 1 described above with reference to FIG.
By applying an AC high voltage having a frequency of 20 kHz or more and 100 kHz or less and applying a DC voltage of, for example, about several hundred volts to each counter electrode 35, thereby generating corona discharge in the vicinity of each discharge electrode 34. It is configured so that the positive and negative ion generation ratio can be freely changed.
【0034】そして,各放電極34の先端34”と各対
極35との最短距離Lは0.4cm以上4cm以下に設
定され,図示の例では,各放電極34の先端34”と,
リング状の対極35との距離で示される最短距離Lが
0.4cm以上4cm以下に設定されている。また各放
電極34に対して印加される交流高電圧の実効値Vとこ
の最短距離Lとの関係が,1.8L(cm)+0.5<
V(kV)<2.8L(cm)+1.0となるように設
定されている。The shortest distance L between the tip 34 "of each discharge electrode 34 and each counter electrode 35 is set to 0.4 cm or more and 4 cm or less. In the illustrated example, the tip 34" of each discharge electrode 34 is
The shortest distance L indicated by the distance from the ring-shaped counter electrode 35 is set to 0.4 cm or more and 4 cm or less. The relationship between the effective value V of the AC high voltage applied to each discharge electrode 34 and the shortest distance L is 1.8 L (cm) +0.5 <
It is set so that V (kV) <2.8 L (cm) +1.0.
【0035】またケーシング30の下方には,作業台3
6が配置されている。この作業台36の上面に,例えば
半導体,HDDヘッドなどといった製品37が置かれて
いる。なお図6は模式図であって,帯電除去設備3や作
業台36などの大きさやそれらの間隔などを正しく示す
ものではない。A work table 3 is provided below the casing 30.
6 are arranged. On the upper surface of the work table 36, a product 37 such as a semiconductor or an HDD head is placed. FIG. 6 is a schematic diagram, and does not correctly show the size of the charge removal equipment 3 or the work table 36, the interval between them, and the like.
【0036】さて以上のように構成された帯電除去設備
3において,前述のように導入孔32からケーシング3
0内にブロアによって清浄空気を供給することにより,
放電極34の少なくとも先端34”において流速10m
/s以上となる清浄空気の気流を形成させて,ガイド壁
31から下方に向かって噴出させる。そして,図示しな
い給電部により,各放電極34に対して実効値Vが8k
V以下で周波数が20Hz以上100kHz以下の交流
高電圧を印加し,各対極35に対して例えば数百ボルト
程度の直流電圧を印加する。これにより,放電極34の
表面に沿って流れる清浄空気が,放電極34の先端3
4”の近傍においてコロナ放電によりイオン化される。
こうして発生させた正と負の空気イオンは,清浄空気の
流れによりガイド壁31から下方に向かって流下し,下
方に配置された作業台36の上面に供給されることとな
る。Now, in the charge removing equipment 3 configured as described above, the casing 3 is inserted through the introduction hole 32 as described above.
By supplying clean air with a blower into 0,
Flow velocity 10 m at least at tip 34 ″ of discharge electrode 34
/ S or more is formed, and is blown downward from the guide wall 31 by forming an air flow of the clean air. Then, an effective value V is set to 8 k for each discharge electrode 34 by a power supply unit (not shown).
An AC high voltage having a frequency of not more than V and a frequency of not less than 20 Hz and not more than 100 kHz is applied, and a DC voltage of, for example, about several hundred volts is applied to each counter electrode 35. As a result, the clean air flowing along the surface of the discharge electrode 34
It is ionized by corona discharge in the vicinity of 4 ".
The positive and negative air ions generated in this manner flow downward from the guide wall 31 by the flow of the clean air, and are supplied to the upper surface of the worktable 36 disposed below.
【0037】従って,以上のように構成された帯電除去
設備3によっても同様に,作業台36の上面に置かれた
製品37の帯電を,清浄空気の流れに載せて供給される
正と負の空気イオンにより除去することが可能となる。
加えてこの実施の形態の帯電除去設備3によれば,ガス
―粒子変換によって発生する微粒子が放電極34に付着
・堆積することを防止でき,放電極34に付着・堆積し
た粒子が脱離して製品37を汚染するといった問題を解
消できるといった特徴がある。なお,この実施の形態の
帯電除去設備3の場合,ケーシング30内に供給する清
浄空気は,クリーンルーム湿度雰囲気を変えることのな
い空気であることが望ましい。Accordingly, the charge of the product 37 placed on the upper surface of the work table 36 is similarly transferred to the positive and negative charges supplied on the flow of clean air by the charge removing device 3 configured as described above. It can be removed by air ions.
In addition, according to the charge removing device 3 of this embodiment, it is possible to prevent the fine particles generated by the gas-particle conversion from adhering and accumulating on the discharge electrode 34, and the particles adhering and accumulating on the discharge electrode 34 are desorbed. There is a feature that the problem that the product 37 is contaminated can be solved. In the case of the charge removing device 3 of the present embodiment, it is desirable that the clean air supplied into the casing 30 be air that does not change the humidity of the clean room.
【0038】なお,以上の実施の形態では,垂直流式ク
リーンルームを例にして説明したが,除電の対象物に対
して水平または斜めの方向から清浄空気を吹きつける設
備にも本発明を適用することが可能である。また,図5
の帯電除去設備2は,クリーンルームやクリーンベン
チ,クリーンブースのHEPA/ULPAフィルタの清
浄空気吹き出し口(0.2m/s〜1.0m/s)に取
り付けて製品を含む周辺の環境全体を除電する場合など
に好適に使用される。一方,図6の帯電除去設備3は,
洗浄槽上部に設置し超純水から引き上げられるウエハや
ガラスの表面電位をノズルから吹き出すイオン化エアで
瞬時に減衰させる場合や,空気イオンを含んだ気流がノ
ズルから吹き出して大型液晶基板の表面全体を覆い尽く
すように広がり基板全体をムラなく一様に短時間で除電
する場合などに好適に使用される。In the above embodiment, the vertical flow type clean room has been described as an example. However, the present invention is also applied to a facility for blowing clean air from a horizontal or oblique direction to an object to be neutralized. It is possible. FIG.
Is installed at a clean air outlet (0.2 m / s to 1.0 m / s) of a HEPA / ULPA filter in a clean room, a clean bench, or a clean booth to remove static electricity from the entire surrounding environment including products. It is suitably used in such cases. On the other hand, the charge removal equipment 3 of FIG.
When the surface potential of a wafer or glass that is installed above the cleaning tank and pulled up from ultrapure water is instantaneously attenuated by ionized air that blows out from the nozzle, or an air current that contains air ions blows out from the nozzle to cover the entire surface of the large liquid crystal substrate It is suitable for use in a case where the charge is spread uniformly so as to completely cover the entire substrate in a short time without unevenness.
【0039】[0039]
【実施例】次に,実施例により,本発明の作用効果を確
認した。先ず,表1は,単結晶シリコン,多結晶シリコ
ン,タングステンのそれぞれで放電極先端を構成した場
合の,放電極先端からの発塵特性を比較したものであ
る。図1〜3で説明したイオン発生装置1において,イ
オン発生部10の下方にCNC(凝縮核式粒子計測器)
30を設置し,CNC30により,0.05μm以上の
大きさの粒子個数濃度を測定した。放電極先端と対極と
の最短距離L=2.5cmとした。各放電極先端の曲率
は0.2mmである。各放電極に対して実効値Vが6k
V,周波数が50Hzの交流高電圧を印加した。また図
1中の白抜き矢印で表される清浄空気の気流速度は0.
3m/s,放電極からCNC30のサンプリングチュー
ブ入口までの距離は400mmとした。また放電極の先
端を電子顕微鏡で観察し,酸化とスパッタリング現象に
よる表面荒れの範囲を併せて示した。なお,表面荒れの
範囲は,放電極先端を基点として測定した表面荒れが生
じている領域の大きさとして定義する。単結晶シリコン
で構成した放電極は,他の2種の素材からなる放電極と
比べて発塵,表面荒れが極めて少ない。EXAMPLE Next, the operation and effect of the present invention were confirmed by an example. First, Table 1 compares the dust generation characteristics from the tip of the discharge electrode when the tip of the discharge electrode is composed of single crystal silicon, polycrystalline silicon, and tungsten. In the ion generator 1 described with reference to FIGS. 1 to 3, a CNC (condensed nucleus particle measuring device) is provided below the ion generator 10.
The number concentration of particles having a size of 0.05 μm or more was measured by the CNC 30. The shortest distance L between the tip of the discharge electrode and the counter electrode was set to 2.5 cm. The curvature of the tip of each discharge electrode is 0.2 mm. Effective value V is 6k for each discharge electrode
V, an AC high voltage having a frequency of 50 Hz was applied. The airflow velocity of the clean air represented by the white arrow in FIG.
The distance from the discharge electrode to the entrance of the sampling tube of the CNC 30 was 3 mm / s, and the distance was 400 mm. The tip of the discharge electrode was observed with an electron microscope, and the range of surface roughness due to oxidation and sputtering was also shown. The range of the surface roughness is defined as the size of the region where the surface roughness is measured measured from the tip of the discharge electrode. The discharge electrode made of single-crystal silicon has extremely little dust generation and surface roughness as compared with discharge electrodes made of other two kinds of materials.
【0040】[0040]
【表1】 [Table 1]
【0041】図7は,単結晶シリコンで構成した放電極
先端12”と対極15との最短距離L(即ち,各放電極
先端12”と,対極13に形成された円孔15の内周面
との距離)と,イオン発生部10の下方で測定される正
又は負のイオン濃度との相関を示したグラフである。イ
オン濃度は,図1中のCNC30をイオン濃度計に変え
て測定した。各放電極先端の曲率は0.2mmである。
放電極先端12”と,対極13に形成された円孔15の
内周面との最短距離L(cm)に応じて,コロナ放電の
開始電圧の実効値V0(V0=1.8L+0.5(k
V))の1.1倍の実効値V(V=1.1V0(k
V))の50Hzの交流電圧を放電極12に印加した。
対極13には,−10Vから−250Vの直流電圧を加
えて正と負のイオン濃度が均衡するように調整した。最
短距離Lが0.4cmより小さいと,放電極先端12”
のコロナ放電で発生した空気イオンは,放電極先端1
2”と対極13との間に形成される電界の作用で,大部
分が対極13に吸収されてしまい,気流で搬出すること
が不可能になる。最短距離Lが0.4cm以上であれ
ば,気流で搬出できるイオン量も増加し,帯電体の除電
が可能となる。但し,最短距離Lが4cmを越えると,
充分な強さのコロナ放電が起きなくなってしまうか,も
しくはコロナ放電を強くするために印加電圧を大きくす
ることが必要になる。しかし,印加電圧を大きくし過ぎ
ると,電磁ノイズを発生させる心配が生じる。FIG. 7 shows the shortest distance L between the discharge electrode tip 12 ″ made of single crystal silicon and the counter electrode 15 (that is, each discharge electrode tip 12 ″ and the inner peripheral surface of the circular hole 15 formed in the counter electrode 13). 4 is a graph showing a correlation between the distance between the ion generating section 10 and a positive or negative ion concentration measured below the ion generating section 10. The ion concentration was measured by changing the CNC 30 in FIG. 1 to an ion concentration meter. The curvature of the tip of each discharge electrode is 0.2 mm.
According to the shortest distance L (cm) between the discharge electrode tip 12 ″ and the inner peripheral surface of the circular hole 15 formed in the counter electrode 13, the effective value V 0 of the corona discharge starting voltage (V 0 = 1.8 L + 0. 5 (k
V)) of 1.1 times the effective value V (V = 1.1V 0 (k
V)) AC voltage of 50 Hz was applied to the discharge electrode 12.
A direct current voltage of -10 V to -250 V was applied to the counter electrode 13 so that the positive and negative ion concentrations were balanced. If the shortest distance L is smaller than 0.4 cm, the discharge electrode tip 12 ″
Air ions generated by the corona discharge at the discharge electrode tip 1
Due to the action of the electric field formed between the 2 "and the counter electrode 13, most of it is absorbed by the counter electrode 13, making it impossible to carry out by air current. If the shortest distance L is 0.4 cm or more, In addition, the amount of ions that can be carried out by the air current increases, and the charge can be removed from the charged body, provided that the shortest distance L exceeds 4 cm.
Either the corona discharge of sufficient intensity will not occur, or it will be necessary to increase the applied voltage to increase the corona discharge. However, when the applied voltage is too high, there is a concern that electromagnetic noise is generated.
【0042】しかし,放電極12に印加する交流電圧の
実効値V(kV)が(2.8L+1.0)の値を越える
と,コロナ放電の強さが大きすぎて,コロナ放電の際に
発生する微量のオゾンによる表面酸化と空気イオンによ
るスパッタリング現象で放電極12の先端12”の劣化
による発塵が測定された。なお発塵は図1に示したCN
C30で測定し,0.05μm以上の大きさの粒子個数
濃度が1ヶ月間の稼働後において10個/ft3を超え
た場合に,放電極12からの発塵が有りと判定した。実
験の結果得られた発塵が起こり始める印加交流電圧の実
効値(2.8L+1.0)及びコロナ放電を開始する印
加交流電圧の実効値(1.8L+0.5)と最短距離L
(cm)の関係を図8に示した。However, when the effective value V (kV) of the AC voltage applied to the discharge electrode 12 exceeds the value of (2.8 L + 1.0), the intensity of the corona discharge is too large, and the corona discharge occurs at the time of the corona discharge. The generation of dust due to the deterioration of the tip 12 "of the discharge electrode 12 was measured by the surface oxidation caused by the trace amount of ozone and the sputtering phenomenon caused by air ions. The dust generation was CN shown in FIG.
C30 was measured, and when the particle number concentration of 0.05 μm or more exceeded 10 particles / ft 3 after one month of operation, it was determined that dust was emitted from the discharge electrode 12. The effective value (2.8 L + 1.0) of the applied AC voltage at which dust generation starts as a result of the experiment and the effective value (1.8 L + 0.5) of the applied AC voltage at which corona discharge starts are determined by the shortest distance L
(Cm) is shown in FIG.
【0043】また,図1中のCNC30をオゾン濃度計
に代え,オゾン濃度を測定した。その結果も図8に示し
た。交流高電圧の実効値V(kV)がV<2.8L+
1.0の範囲にあり,かつ8kV以下にすると,オゾン
発生もほぼ10volppb以下に抑制できた。The ozone concentration was measured by replacing the CNC 30 in FIG. 1 with an ozone concentration meter. The results are also shown in FIG. Effective value V (kV) of AC high voltage is V <2.8L +
When it was in the range of 1.0 and 8 kV or less, the generation of ozone could be suppressed to about 10 volppb or less.
【0044】次に,図5で説明した帯電除去設備2によ
ってHDD(Hard DiskDrive)のヘッド
を除電する場合について,清浄空気の流速の望ましい範
囲を測定した。図5の帯電除去設備2において,放電極
先端と対極との最短距離L=2.5cmとした。放電極
先端の曲率半径は0.2mmである。各放電極に対して
実効値Vが6kV,周波数が50Hzの交流高電圧を印
加した。帯電除去設備2を設けたクリーンルームの清浄
度はクラス1000(0.3μmの大きさのゴミが1f
t3の空気中に1000個程度存在)である。清浄空気
の流速とヘッドに付着した0.3μm以上の大きさのゴ
ミの個数の関係を表2に示す。清浄空気の流速は0.2
m/sから1.0m/sの範囲が望ましい。流速が遅す
ぎると,クリーンルーム内にいるオペレータからの発塵
粒子をヘッドから充分遠方に遠ざけることができない。
また流速が速すぎると,気流がヘッド周辺の作業台上の
塵埃を巻き上げて歩留まりが低下してしまうためであ
る。Next, a desirable range of the flow rate of the clean air was measured in the case where the head of the hard disk drive (HDD) was neutralized by the charge removal equipment 2 described with reference to FIG. 5, the shortest distance L between the tip of the discharge electrode and the counter electrode was set to L = 2.5 cm. The radius of curvature at the tip of the discharge electrode is 0.2 mm. An AC high voltage having an effective value V of 6 kV and a frequency of 50 Hz was applied to each discharge electrode. The cleanliness of the clean room provided with the static elimination equipment 2 is class 1000 (dust of 0.3 μm is 1f
in in the air t 3 is about 1,000 exist). Table 2 shows the relationship between the flow rate of the clean air and the number of dust particles having a size of 0.3 μm or more attached to the head. Clean air flow rate is 0.2
The range of m / s to 1.0 m / s is desirable. If the flow velocity is too slow, dust particles from an operator in the clean room cannot be kept sufficiently far from the head.
On the other hand, if the flow velocity is too high, the air flow will raise dust on the workbench around the head and the yield will be reduced.
【0045】[0045]
【表2】 [Table 2]
【0046】次に,図6で説明した帯電除去設備3によ
って3ヶ月間連続運転した後における,放電極34の先
端34”からの発塵を,ガイド壁31の下端開口部出口
において0.05μm以上の大きさの粒子数濃度をCN
Cによって測定することにより,調べた。放電極34に
対して実効値Vが6kV,周波数が50Hzの交流高電
圧を印加し,放電極34の先端34”と対極35との最
短距離Lは2.0cmである。放電極先端34”の曲率
半径は0.2mmである。その際,放電極34の先端3
4”周辺での清浄空気の流速(m/s)を変化させた。
その結果を図9に示す。Next, the dust generated from the tip 34 ″ of the discharge electrode 34 after the continuous operation for three months by the charge removal equipment 3 described with reference to FIG. The particle number concentration of
It was determined by measuring with C. An AC high voltage having an effective value V of 6 kV and a frequency of 50 Hz is applied to the discharge electrode 34, and the shortest distance L between the tip 34 "of the discharge electrode 34 and the counter electrode 35 is 2.0 cm. Has a radius of curvature of 0.2 mm. At this time, the tip 3 of the discharge electrode 34
The flow rate (m / s) of the clean air around 4 "was varied.
FIG. 9 shows the result.
【0047】放電極34の先端34”周辺での清浄空気
の流速が10m/s以下では,0.05μm以上の大き
さの粒子個数濃度が10個/ft3を超えている。これ
は,ガス―粒子変換による微粒子が放電極34に付着・
堆積した後,再脱離したものである。流速2m/sにお
ける放電極34の先端部分を顕微鏡により観察したとこ
ろ,ガス―粒子変換による微粒子の集合体と思われる大
きさが0.5mm程度の白い樹状突起物が見られた。し
かし,放電極34の先端34”周辺での清浄空気の流速
が10m/sを超えると,0.05μm以上の大きさの
粒子個数濃度は10個/ft3以下となった。流速20
m/sにおける放電極34の先端34”を顕微鏡により
観察したところ,付着物はほとんど観察されなかった。
高速気流によって,ガス―粒子変換により生成した微粒
子が吹き飛ばされて放電極34に付着・堆積しなかった
と考えられる。なお,この微粒子は0.05μm以上で
はあるが0.1ミクロン以下であり,製品工程に影響は
及ばさない。むしろ,放電極に付着・成長して脱離する
ことを回避できる効果が大きい。When the flow rate of the clean air around the tip 34 "of the discharge electrode 34 is 10 m / s or less, the concentration of particles having a size of 0.05 μm or more exceeds 10 particles / ft 3 . -Particles due to particle conversion adhere to the discharge electrode 34
After being deposited, it was desorbed again. When the tip of the discharge electrode 34 at a flow rate of 2 m / s was observed with a microscope, a white dendrite having a size of about 0.5 mm, which was considered to be an aggregate of fine particles by gas-particle conversion, was observed. However, when the flow rate of the clean air around the tip 34 "of the discharge electrode 34 exceeds 10 m / s, the concentration of the number of particles having a size of 0.05 μm or more becomes 10 particles / ft 3 or less.
When the tip 34 ″ of the discharge electrode 34 at m / s was observed with a microscope, almost no deposits were observed.
It is considered that the fine particles generated by the gas-particle conversion were blown off by the high-speed airflow and did not adhere to or accumulate on the discharge electrode 34. The size of the fine particles is 0.05 μm or more but 0.1 μm or less, and does not affect the product process. Rather, the effect of avoiding detachment due to attachment / growth to the discharge electrode is large.
【0048】さらに,図6で説明した帯電除去設備3に
おいて,放電極34から10cm離れた距離に+10k
Vに帯電した300mm直径のシリコンウエハを配置
し,ガイド壁31から噴出させた清浄空気を供給するこ
とにより,除電を行った。放電極34に対して実効値V
が6kVの交流高電圧を印加し,放電極34の先端3
4”と対極35との最短距離Lが2.5cm,放電極3
4の先端34”周辺での清浄空気の流速が20m/sの
場合に,交流高電圧の周波数を20Hz以上500kH
z以下の範囲で変えた。シリコンウエハの帯電電位が1
0kVから1/10の1kVに減衰するまでの時間と周
波数の関係を図10に示す。Further, in the charge removal equipment 3 described with reference to FIG.
A silicon wafer having a diameter of 300 mm and charged with V was placed, and static electricity was removed by supplying clean air ejected from the guide wall 31. Effective value V for discharge electrode 34
Applies an AC high voltage of 6 kV, and the tip 3 of the discharge electrode 34
The shortest distance L between 4 "and the counter electrode 35 is 2.5 cm, and the discharge electrode 3
In the case where the flow rate of the clean air around the tip 34 ″ of the No. 4 is 20 m / s, the frequency of the AC high voltage is set to 20 Hz or more and 500 kHz.
It was changed within the range of z or less. The charged potential of the silicon wafer is 1
FIG. 10 shows the relationship between time and frequency until the voltage is attenuated from 0 kV to 1/10 of 1 kV.
【0049】本発明の如き交流電圧を用いた帯電除去設
備では,正負のイオンを清浄空気で搬送し,帯電物を中
和するが,イオンは搬送中に気流中で混じり合いながら
帯電物に到達するため,到達前に一定の割合で正と負の
イオンが再結合しやすい。100kHzを越えるの周波
数では,正と負のイオンが結合・中和して消滅する度合
いが著しく,100kHz以下と比較して,帯電物の除
電時間も大幅に長くかかってしまう。一方,20Hz未
満の周波数では,帯電表面が除電された後も,その表面
電位は正と負のイオンが到達する度に正と負の数十ボル
トの電位を交互に繰り返し,かえって製品歩留まりを低
下することにもなりかねない。したがって,放電極34
に印加する交流高電圧の周波数は20Hz以上100k
Hz以下であることが望ましい。In the charge removal equipment using an AC voltage as in the present invention, positive and negative ions are transported by clean air to neutralize the charged material, but the ions reach the charged material while being mixed in the airflow during the transport. Therefore, the positive and negative ions are likely to recombine at a certain ratio before reaching. At a frequency exceeding 100 kHz, the degree to which the positive and negative ions are combined and neutralized and disappears is remarkable, and the charge elimination time of the charged material is much longer than at 100 kHz or less. On the other hand, at a frequency of less than 20 Hz, even after the charged surface is neutralized, the surface potential thereof alternates between positive and negative tens of volts each time positive and negative ions arrive, thereby lowering the product yield. It could be. Therefore, the discharge electrode 34
The frequency of the AC high voltage to be applied is 20Hz or more and 100k
Hz or less is desirable.
【0050】また放電極34からなるべく近い位置にシ
リコンウエハなどの帯電体を配置して,イオンの到着時
間を短くすることによっても,帯電体の除電時間を短く
できる。但し,帯電体が半導体,LCD,HDD等の電
磁輻射ノイズに敏感なものである場合は,放電極34の
先端34”で発生する電磁輻射ノイズの影響を受けない
ようにする注意が必要である。長さ25mmのモノポー
ルアンテナを放電極先端部分から15cmの距離に配置
し,高速オシロスコープをアンテナに繋いで1MHzか
ら120MHzの帯域に分布する電磁輻射ノイズを測定
した。放電極34に印加する交流高電圧の実効値Vが8
kV以下で,かつ実効値Vと最短距離Lが1.8L+
0.5<V<2.8L+1.0の範囲にあれば,電磁輻
射ノイズの大きさは5〜10mVであって,バックグラ
ウンドノイズ(別称ホワイトノイズ)レベル2〜5mV
を少し上回る程度であり,製品が電磁輻射ノイズの影響
を受けないようにすることが可能である。Also, by arranging a charged body such as a silicon wafer as close as possible to the discharge electrode 34 and shortening the ion arrival time, the charge elimination time of the charged body can be shortened. However, when the charged body is sensitive to electromagnetic radiation noise such as semiconductors, LCDs, and HDDs, it is necessary to take care not to be affected by the electromagnetic radiation noise generated at the tip 34 "of the discharge electrode 34. A monopole antenna having a length of 25 mm was placed at a distance of 15 cm from the tip of the discharge electrode, and a high-speed oscilloscope was connected to the antenna to measure electromagnetic radiation noise distributed in a band of 1 MHz to 120 MHz. High voltage effective value V is 8
kV or less, and the effective value V and the shortest distance L are 1.8L +
If it is in the range of 0.5 <V <2.8L + 1.0, the magnitude of the electromagnetic radiation noise is 5 to 10 mV, and the background noise (also called white noise) level is 2 to 5 mV.
This is slightly higher than the above, and it is possible to prevent the product from being affected by electromagnetic radiation noise.
【0051】次に,放電極の先端の曲率半径の大きさを
種々変えて,発塵特性を調べた。図1〜3で説明したイ
オン発生装置1において,イオン発生部10の下方にC
NC(凝縮核式粒子計測器)30を設置し,CNC30
により,0.05μm以上の大きさの粒子個数濃度を測
定した。放電極先端と対極との最短距離L=2.5cm
とした。いずれも単結晶シリコンで構成した,先端の曲
率半径が0.05mm,0.08mm,0.1mm,
0.2mm,0.3mm,0.4mm,0.5mm,
0.6mmの各放電極を用いて,図1〜3に示すイオン
発生装置1を1年間連続稼働させた場合の,放電極先端
からの発塵特性を経時的に調べた。測定された粒子個数
濃度を表3に示す。各放電極に対して実効値Vが6k
V,周波数が50Hzの交流高電圧を印加した。また図
1中の白抜き矢印で表される清浄空気の気流速度は0.
3m/s,放電極からCNC30のサンプリングチュー
ブ入口までの距離は400mmとした。また放電極の先
端を電子顕微鏡で観察し,酸化とスパッタリング現象に
よる表面荒れの範囲を併せて示した。なお,表面荒れの
範囲は,放電極先端を基点として測定した表面荒れが生
じている領域の大きさとして定義する。Next, the dust generation characteristics were examined by changing the radius of curvature of the tip of the discharge electrode in various ways. In the ion generator 1 described with reference to FIGS.
An NC (condensed nucleus type particle measuring device) 30 is installed, and a CNC 30
Was used to measure the particle concentration of particles having a size of 0.05 μm or more. The shortest distance between the tip of the discharge electrode and the counter electrode L = 2.5 cm
And Each of them is made of single crystal silicon and has a radius of curvature of 0.05 mm, 0.08 mm, 0.1 mm,
0.2mm, 0.3mm, 0.4mm, 0.5mm,
When the ion generator 1 shown in FIGS. 1 to 3 was continuously operated for one year using each 0.6 mm discharge electrode, dust generation characteristics from the discharge electrode tip were examined with time. Table 3 shows the measured particle number concentrations. Effective value V is 6k for each discharge electrode
V, an AC high voltage having a frequency of 50 Hz was applied. The airflow velocity of the clean air represented by the white arrow in FIG.
The distance from the discharge electrode to the entrance of the sampling tube of the CNC 30 was 3 mm / s, and the distance was 400 mm. The tip of the discharge electrode was observed with an electron microscope, and the range of surface roughness due to oxidation and sputtering was also shown. The range of the surface roughness is defined as the size of the region where the surface roughness is measured measured from the tip of the discharge electrode.
【0052】[0052]
【表3】 [Table 3]
【0053】更に,図1に示すイオン発生装置1におい
て,放電極下方400mmに配置したCNC30のサン
プリングチューブ入り口の位置にイオン濃度計を設置
し,空気イオン濃度を測定した。その結果を表4に示
す。空気イオン濃度は,イオン濃度計で測定したプラス
イオン濃度とマイナスイオン濃度の平均値として定義し
た。例えば,プラスイオン濃度1.8×105個/cm
3,マイナスイオン濃度2.2×105個/cm3であ
った場合,表4に示されるイオン濃度は両者の平均値
2.0×105個/cm3となる。Further, in the ion generator 1 shown in FIG. 1, an ion concentration meter was installed at the position of the sampling tube entrance of the CNC 30 located 400 mm below the discharge electrode, and the air ion concentration was measured. Table 4 shows the results. The air ion concentration was defined as the average of the positive ion concentration and the negative ion concentration measured by an ion densitometer. For example, a positive ion concentration of 1.8 × 10 5 / cm
3 , when the negative ion concentration is 2.2 × 10 5 ions / cm 3 , the ion concentration shown in Table 4 is an average value of both, 2.0 × 10 5 ions / cm 3 .
【0054】[0054]
【表4】 [Table 4]
【0055】放電極先端の曲率半径が0.1mmよりも
小さくなると,著しい発塵が生じる。例えば曲率半径
0.05mmという曲率の小さな先端では電界集中が起
こり,先端のシリコン単結晶表面に空気イオンが激しく
叩きつけられる。このスパッタリング作用によりシリコ
ン単結晶表面の深さ方向に酸化による劣化が進行する。
曲率半径0.05mmの放電極先端の表面荒れの範囲は
せいぜい6μmにすぎないが,その劣化の深度は,先端
分の電界集中の度合いが比較的小さな曲率半径が0.1
mm以上の場合と比較して著しく大きい。When the radius of curvature at the tip of the discharge electrode is smaller than 0.1 mm, significant dust is generated. For example, electric field concentration occurs at the tip having a small curvature radius of 0.05 mm, and the air ions are violently bombarded on the silicon single crystal surface at the tip. Due to this sputtering action, deterioration due to oxidation proceeds in the depth direction of the silicon single crystal surface.
The surface roughness of the tip of the discharge electrode having a radius of curvature of 0.05 mm is at most 6 μm at most, but the depth of the deterioration is 0.1 mm when the degree of electric field concentration at the tip is relatively small.
mm or more.
【0056】一方,放電極先端の曲率半径が0.5mm
になると,放電極先端の劣化は,曲率半径が0.4mm
以下の場合と比較して相当抑制される。その原因は,コ
ロナ放電そのものが起こりにくくなって空気イオンの発
生が少なくなったためであるが,コロナ放電が起こりに
くくなると実質的にイオン発生装置としての機能が劣る
心配がある。On the other hand, the radius of curvature at the tip of the discharge electrode is 0.5 mm.
, The tip of the discharge electrode deteriorates when the radius of curvature is 0.4 mm
It is considerably suppressed as compared with the following cases. The cause is that the corona discharge itself is less likely to occur and the generation of air ions is reduced. However, if the corona discharge is less likely to occur, there is a concern that the function as an ion generator is substantially deteriorated.
【0057】[0057]
【発明の効果】請求項1〜5によれば,放電極の劣化が
少なく,しかも電磁輻射ノイズやオゾンの発生も抑制可
能な,イオン発生装置と帯電除去設備が提供される。特
に請求項4によれば,製品表面にゴミなどが付着するの
を防止できる。また請求項5によれば,放電極の先端部
分に対する付着物の堆積を防止できる。According to the first to fifth aspects of the present invention, there is provided an ion generator and a charge removing device capable of suppressing deterioration of the discharge electrode and suppressing generation of electromagnetic radiation noise and ozone. In particular, according to the fourth aspect, it is possible to prevent dust and the like from adhering to the product surface. Further, according to the fifth aspect, it is possible to prevent the deposition of the deposit on the tip portion of the discharge electrode.
【図1】本発明の実施の形態にかかるイオン発生装置の
斜視図である。FIG. 1 is a perspective view of an ion generator according to an embodiment of the present invention.
【図2】イオン発生部の平面図である。FIG. 2 is a plan view of an ion generator.
【図3】図1におけるA−A断面拡大図である。FIG. 3 is an enlarged cross-sectional view taken along the line AA in FIG. 1;
【図4】放電極先端部分の形状の拡大図である。FIG. 4 is an enlarged view of a shape of a discharge electrode tip portion.
【図5】本発明の第1の実施の形態にかかる帯電除去設
備の模式的な説明図である。FIG. 5 is a schematic explanatory view of a charge removal facility according to the first embodiment of the present invention.
【図6】本発明の第2の実施の形態にかかる帯電除去設
備の模式的な断面図である。FIG. 6 is a schematic cross-sectional view of a charge removal facility according to a second embodiment of the present invention.
【図7】最短距離Lとイオン濃度との相関を示すグラフ
である。FIG. 7 is a graph showing a correlation between a shortest distance L and an ion concentration.
【図8】コロナ放電を開始する交流電圧の実効値と最短
距離Lとの関係,発塵が起こり始める印加交流電圧の実
効値と最短距離Lとの関係,オゾン発生をほぼ10vo
lppb以下に抑制できる範囲を示したグラフである。FIG. 8 shows the relationship between the effective value of the AC voltage for starting corona discharge and the shortest distance L, the relationship between the effective value of the applied AC voltage at which dust generation starts and the shortest distance L, and ozone generation of approximately 10 vo.
It is the graph which showed the range which can be controlled below lppb.
【図9】放電極先端での清浄空気の流速と粒子数濃度の
相関を示すグラフである。FIG. 9 is a graph showing the correlation between the flow rate of clean air at the tip of the discharge electrode and the particle number concentration.
【図10】シリコンウエハの帯電電位が1/10に減衰
するまでの時間と交流高電圧の周波数の関係を示すグラ
フである。FIG. 10 is a graph showing the relationship between the time until the charging potential of the silicon wafer attenuates to 1/10 and the frequency of the AC high voltage.
L 最短距離 1 イオン発生装置 2,3 帯電除去設備 10 イオン発生部 12 放電極 12’ 先端部分 12” 先端 13 対極 15 円孔 20 給電部 25 直流トランス 27 交流トランス 30 ケーシング 31 ガイド壁 34 放電極 35 対極 36,41 作業台 37,42 製品 40 高性能フィルタ L Shortest distance 1 Ion generator 2, 3 Charge removal equipment 10 Ion generator 12 Discharge electrode 12 'Tip 12 "Tip 13 Counter electrode 15 Circular hole 20 Feeder 25 DC transformer 27 AC transformer 30 Casing 31 Guide wall 34 Discharge electrode 35 Counter electrode 36,41 Work table 37,42 Product 40 High performance filter
Claims (5)
電極に交流高電圧を印加してコロナ放電により放電極周
辺の空気をイオン化させるイオン発生装置であって,少
なくとも放電極の先端がシリコン単結晶で構成され,放
電極の先端と対極との最短距離Lが0.4cm以上4c
m以下であり,放電極に印加される交流高電圧の実効値
Vが8kV以下であり,かつ1.8L(cm)+0.5
<V(kV)<2.8L(cm)+1.0であることを
特徴とする,イオン発生装置。1. An ion generator comprising a needle-shaped discharge electrode and a conductive counter electrode, wherein an AC high voltage is applied to the discharge electrode to ionize air around the discharge electrode by corona discharge. The tip is made of silicon single crystal, and the shortest distance L between the tip of the discharge electrode and the counter electrode is 0.4 cm or more and 4 c
m, the effective value V of the AC high voltage applied to the discharge electrode is 8 kV or less, and 1.8 L (cm) +0.5
<V (kV) <2.8 L (cm) +1.0. An ion generator.
0kHz以下であることを特徴とする,請求項1のイオ
ン発生装置。2. The frequency of an AC high voltage is 20 Hz or more and 10 or more.
2. The ion generator according to claim 1, wherein the frequency is 0 kHz or less.
〜0.4mmであることを特徴とする,請求項1又は2
のイオン発生装置。3. The curvature radius of the tip of the discharge electrode is 0.1 mm.
3. The method according to claim 1, wherein the distance is about 0.4 mm.
Ion generator.
発生装置を流速が0.2m/s以上1.0m/s以下の
清浄空気の流れの中に配置し,かつ,放電極を前記清浄
空気の流れを横切る方向に二次元的な広がりを持って複
数配置したことを特徴とする,帯電除去設備。4. The ion generator according to claim 1, 2 or 3 is disposed in a flow of clean air having a flow velocity of 0.2 m / s or more and 1.0 m / s or less, and a discharge electrode. A plurality of static eliminators are arranged with a two-dimensional spread in a direction crossing the flow of the clean air.
発生装置の放電極の少なくとも先端に,流速10m/s
以上の清浄空気の気流を供給する構成としたことを特徴
とする,帯電除去設備。5. A flow rate of 10 m / s at least at a tip of the discharge electrode of the ion generator according to claim 1, 2 or 3.
A static elimination facility, characterized in that it is configured to supply the above-described clean air stream.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000297117A JP2001189199A (en) | 1999-10-22 | 2000-09-28 | Ion generator and charge removal equipment |
| KR1020000061849A KR100700678B1 (en) | 1999-10-22 | 2000-10-20 | Ion Generator and Antistatic Facility |
| CNB001281968A CN1230954C (en) | 1999-10-22 | 2000-10-21 | Ion producer and static charge removing apparatus |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30161899 | 1999-10-22 | ||
| JP11-301618 | 1999-10-22 | ||
| JP2000297117A JP2001189199A (en) | 1999-10-22 | 2000-09-28 | Ion generator and charge removal equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001189199A true JP2001189199A (en) | 2001-07-10 |
Family
ID=26562780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000297117A Pending JP2001189199A (en) | 1999-10-22 | 2000-09-28 | Ion generator and charge removal equipment |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2001189199A (en) |
| KR (1) | KR100700678B1 (en) |
| CN (1) | CN1230954C (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20010051161A (en) | 2001-06-25 |
| KR100700678B1 (en) | 2007-03-27 |
| CN1230954C (en) | 2005-12-07 |
| CN1297269A (en) | 2001-05-30 |
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