JP2001177188A - Gallium nitride-base compound semiconductor light emitting element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a light emitting element in a blue region, a violet region or an ultraviolet light region is a short wavelength. SOLUTION: An AlN layer 2, an Si-doped n-type GaAlN layer 3 (as an n- layer), a GaN layer 4 (as an active layer) and an Mg-doped GaAlN layer 5 (as a p-layer) are formed on a sapphire substrate 1. An SiO2 layer 7 is deposited on the Mg-doped GaAlN layer 5 (as the p-layer). After that, a window 7A is opened in a rectangular shape in a length of 1 mm and a width of 50 μm. A metal electrode is formed in the part of a window 8 in the Mg-doped GaAlN layer 5 (as the p-layer), and a metal electrode is formed in the Si-doped n-type GaAlN layer 3 (as the n-layer).

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device capable of emitting light in a visible light, a visible single wavelength, particularly in a blue region to a violet region, and in an ultraviolet region. For example, it relates to a light emitting diode and a laser diode.

A light emitting diode or a laser diode, which is a semiconductor light emitting device of the present invention, is subjected to an electron beam irradiation treatment ((Al _x Ga _{1 -x} ) _y In _{1 -y} ) first revealed by the present inventors.
For the first time, ((Al _x Ga _1-x ) _y In _1-y
N: 0 ≦ x ≦ 1, 0 ≦ y ≦ 1) It is possible to manufacture a semiconductor light emitting device.

[0003]

2. Description of the Related Art The shortest wavelength current injection type semiconductor laser diode which has been put into practical use at present is made of indium gallium aluminum phosphide (InGaAlP) based crystal. Its oscillation wavelength belongs to the visible long wavelength region, that is, the 0.6 to 0.7 μm band which is the red region.

[0004]

However, further,
It is difficult to realize a semiconductor laser capable of emitting light in the blue, violet, or ultraviolet region, which is a short wavelength, due to the physical properties of this material. It is necessary to use a semiconductor material having a wider band gap. (Al _x Ga _1-x ) _y In _1-y N is one of the candidates.

[0005] (Al _x Ga _1-x ) _y In _1-y N), in particular, GaN
(300K) has been confirmed to be stimulated emission by photoexcitation (H. Amano et al .; Japanese Journal of Applied Physics)
Vol. 29, 1990, pp. L205-L206). For this reason, there is a possibility that a laser diode can be formed from the above semiconductor.

However, since it is difficult to produce a p-type single crystal thin film with the above-mentioned compound semiconductors, up to the present, semiconductors have been manufactured by current injection using (Al _x Ga _{1 -x} ) _y In _{1 -y} N. Laser diode is not realized.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a light-emitting device such as a light-emitting diode or a laser in a short-wavelength blue, purple or ultraviolet region. Is to obtain a manufacturing method.

[0008]

The invention of claim 1 shows a gallium nitride (GaN) substrate and an n-type conductivity formed above the gallium nitride (GaN) substrate ((Al _x1 Ga _1-x1 ) _y1 In _1-y1
N: 0 ≦ x1 ≦ 1, 0 ≦ y1 ≦ 1) and p-type conductivity ((Al _x2 Ga _1-x2 ) _y2 In _1-y2 N: 0 ≦ x2 ≦ 1,0 ≦ y2 ≦ 1), between the n-layer and the p-layer, the n-layer and the p-layer
Narrower bandgap than layer ((Al _x3 Ga _1-x3 ) _y3 In _1-y3 N: 0
≦ x3 ≦ 1, 0 ≦ y3 ≦ 1, provided that x3 = y3 = 1 is not included).

According to a second aspect of the present invention, in the first aspect, a buffer layer is formed on the gallium nitride (GaN) substrate.

A third aspect of the present invention is characterized in that, in the second aspect, the buffer layer is made of gallium nitride (GaN).

According to a fourth aspect of the present invention, in the third aspect of the present invention, the buffer layer is of an n-type.

The invention according to claim 5 is the invention according to claims 1 to 4.
The gallium nitride (GaN) substrate is an n-type single crystal.

[0013] The invention of claim 6 is the first to fifth aspects of the present invention.
In the invention described in any one of the above, the light emitting layer is characterized by comprising a thin film crystal having a relatively large band gap and a plurality of thin film crystals having a relatively small band gap joined together.

According to a seventh aspect of the present invention, there is provided the first to sixth aspects.
In the invention described in any one of the above, a negative electrode for the n-layer is formed on the back surface of the gallium nitride (GaN) substrate.

[0015] The invention of claim 8 is the first to seventh aspects of the present invention.
In the invention described in any one of the above, the light-emitting layer is an n-conduction type.

According to the ninth aspect of the present invention, there are provided the first to eighth aspects.
In the invention described in any one of the above, in at least one of the positive electrode and the negative electrode, a region where the electrode is joined is formed with a high carrier concentration.

According to a tenth aspect of the present invention, there is provided the crystal according to any one of the first to ninth aspects, wherein at least one of the positive electrode and the negative electrode is in contact with the crystal, and a high carrier concentration can be easily realized. Is further provided.

According to an eleventh aspect of the present invention, in the first aspect of the present invention, the principal surface of the gallium nitride (GaN) substrate on which the crystal is grown is (000).
1) It is a surface.

According to a twelfth aspect of the present invention, in any one of the first to eleventh aspects, the gallium nitride (GaN) substrate has a low resistance.

According to a thirteenth aspect of the present invention, in the first aspect of the present invention, the n-layer is made of Ga.
It is characterized by being made of AlN.

According to a fourteenth aspect of the present invention, in the first aspect of the present invention, the p-layer is made of Ga.
It is characterized by being made of AlN.

According to a fifteenth aspect of the present invention, in any one of the first to fourteenth aspects, the n-layer comprises silicon (Si), oxygen (O), sulfur (S), selenium (Se). ),tellurium
At least one donor impurity element of (Te) is added.

According to a sixteenth aspect of the present invention, in the first aspect of the invention, the p-layer is made of beryllium (Be), magnesium (Mg), zinc (Zn), cadmium.
(Cd) and at least one acceptor impurity element of carbon (C) is added.

According to a seventeenth aspect of the present invention, in any one of the first to sixteenth aspects, the carrier concentration of the p-layer is controlled by the concentration of the acceptor impurity element and the electron beam irradiation conditions. It is characterized by the following.

According to an eighteenth aspect of the present invention, in any one of the first to seventeenth aspects, the gallium nitride based compound semiconductor light emitting device is a laser diode.

According to a nineteenth aspect of the present invention, in the invention according to the eighteenth aspect, a portion where the p layer and its positive electrode are joined is
It is characterized by a strip shape.

[0027]

[Action and Effect] ((Al _x Ga _1-x ) _y In _1-y N: 0 ≦ x ≦ 1,0 ≦ y ≦
1) For semiconductors, the present inventors have made it possible for the first time to manufacture a layer exhibiting p-type conductivity. As a result, it has become possible to manufacture and oscillate a light emitting diode or a laser diode, which is a carrier injection type light emitting element made of the gallium nitride compound semiconductor.

According to the present invention, (Al _x
Ga _1-x ) _y In _1-y N semiconductor light-emitting diodes and semiconductor lasers with emission wavelengths and oscillation wavelengths in the blue to violet and ultraviolet regions by devising the p-type effect and the structure. Diodes have been realized.

[0029]

SUMMARY OF THE INVENTION In the above invention, sapphire, silicon (Si), 6H silicon carbide (6H-SiC) is used as the substrate for preparing aluminum gallium indium nitride (Al _x Ga _{1 -x} ) _y In _{1 -y} N single crystal. Alternatively, gallium nitride (GaN) can be used.

When sapphire is used as the substrate, it is preferable that at least a layer containing an AlN thin film deposited at a low temperature (for example, about 600 ° C.) be used as the buffer layer.

When Si is used as a substrate, at least 3C-SiC
It is desirable that the buffer layer be a thin film or a layer including two layers of a 3C-SiC thin film and an AlN thin film.

When 6H-SiC is used as a substrate, it is not directly or Ga
It is desirable that N be a buffer layer. When GaN is used as a substrate, a single crystal is directly produced. Si, 6H-SiC and GaN
Is used as a substrate, an n-type single crystal is used.

First, the case of producing a pn junction structure using crystals of the same composition will be described. When sapphire is used as the substrate, the substrate temperature is set to a desired value (for example, 600 ° C.) immediately before (Al _x Ga _1-x ) _y In _1-y N is grown, and at least aluminum (Al) is introduced into the growth furnace. ) And a hydroxide of nitrogen are introduced to form an AlN thin film buffer layer on the sapphire substrate surface.

Thereafter, the introduction of the compound containing Al is stopped, and the substrate temperature is reset. Then, a compound containing Al, a compound containing gallium (Ga) and a compound containing indium (In) are introduced so as to have a desired mixed crystal composition, and n-type (Al _x Ga _1-x ) is introduced.
_y In _1-y N A single crystal is grown.

In this case, in order to lower the resistivity of the n-type single crystal, Si, oxygen (O), sulfur (S), selenium (Se), tellurium (Te) are used.
For example, a compound containing an element serving as a donor impurity may be introduced at the same time.

In the case of doping with a donor impurity, the concentration may be uniform in the n-layer.
Further, in order to facilitate the formation of the n-layer ohmic electrode, the n-layer may be doped at a high concentration at the initial stage of growth and may not be doped near the pn junction or may be doped at a low concentration.

Next, the wafer is once taken out of the growth furnace, a part of the sample surface is covered with a material serving as a mask for selective growth, for example, silicon oxide (SiO ₂ ), and the wafer is returned to the growth furnace again. Alternatively, the growth is continued without taking out the wafer.

Al having at least a desired mixed crystal composition
A compound containing, a compound containing Ga, a compound containing In and a hydride of nitrogen and an element serving as an acceptor impurity such as beryllium (Be), magnesium (Mg), zinc (Zn), cadmium (Cd), and carbon (C). Is introduced into a growth furnace to grow an (Al _x Ga _{1 -x} ) _y In _{1 -y} N single crystal (p layer) doped with acceptor impurities.

The growth thickness of the acceptor-doped layer was determined by electron beam irradiation.
It is determined in consideration of the electron beam penetration length in the case of irradiation processing.
Next, the wafer is removed from the growth furnace, and the acceptor dope (A
l_xGa _1-x)_yIn_1-yPerform N layer electron beam irradiation treatment.

The region to be subjected to the electron beam irradiation treatment is formed on the whole or a part of the sample surface, for example, a strip shape. When the entire sample surface is irradiated with an electron beam, the acceptor-doped layer (p
An insulating layer is deposited on the layer, a strip-shaped window is opened in a part of the insulating layer, and a metal is contacted on the window to form an ohmic electrode for the p-layer. In the case where the electron beam irradiation treatment is performed in a strip shape, a metal is brought into contact so as to cover part or all of the region irradiated with the electron beam, and an ohmic electrode for the p-layer is formed.

Finally, the shape of the portion where the metal contacts the p-layer is a strip. The electrode of the n-layer is formed after removing the selective growth mask, or by etching a part of the acceptor-doped layer (p-layer) from the surface side to form the n-layer electrode.
Open a window to the layer and contact the metal to form an ohmic electrode.

When n-type Si, 6H-SiC or GaN is used as a substrate, an element is manufactured by substantially the same means. However, the selective growth technique is not used, and the electrodes for the p layer and the n layer are formed on both the upper and lower sides of the device. That is, the n-layer electrode contacts the metal on the entire back surface of the substrate to form an ohmic electrode.

The above is a basic method for fabricating a semiconductor laser diode having a pn junction structure using crystals of the same composition. Also in the case of manufacturing a device using a junction of crystals of different mixed crystal compositions, that is, a so-called hetero junction, the formation of a pn junction is the same as the case of using the above-described junction of crystals of the same mixed crystal composition.

When a single heterojunction is formed, in addition to a pn junction made of crystals having the same mixed crystal composition, an n-type crystal having a large forbidden band width is further joined to the n-layer to form holes, which are minority carriers. A diffusion blocking layer.

Since the emission near the bandgap of the (Al _x Ga _{1 -x} ) _y In _{1 -y} N based single crystal is particularly strong in the n-layer, it is necessary to use an n-type crystal for the active layer. The band structure of the (Al _x Ga _1-x ) _y In _1-y N-based single crystal is (Al _x Ga _1-x ) _y In _1-y As-based single crystal or (Al _x Ga _1-x ) _y In _{1 -y}
Similar to a P-based single crystal, it is considered that the band discontinuity ratio is larger in the conduction band than in the valence band. However, (Al _x
In a Ga _1-x ) _y In _1-y N-based single crystal, since the effective mass of holes is relatively large, a heterojunction between n-types effectively acts as a hole diffusion inhibitor.

When two heterojunctions are formed, n-type and p-type crystals having a large forbidden band are joined to both sides of an n-type crystal having a relatively small forbidden band, respectively. The structure sandwiches the crystal.

In the case of forming a large number of heterojunctions, a plurality of thin film crystals of an n-type having a relatively large forbidden band width and a plurality of thin film crystals of a relatively small forbidden band width are joined to each other. Type and p-type crystals are joined to sandwich a number of heterojunctions.

Since the refractive index of light near the forbidden band width of the (Al _x Ga _1-x ) _y In _1-y N-based single crystal is larger as the forbidden band width is smaller, the other (Al _x Ga _1-x) ) as with _y in _1-y as-based single crystal or _{(Al x Ga 1-x)} y in 1-y P type semiconductor laser diode according to a single crystal heterostructure sandwiching a large crystal of the band gap in the confinement of light Is also effective.

When a heterojunction is used, similarly to the case of a pn junction made of crystals having the same composition, the carrier concentration near the portion in contact with the electrode may be made high to facilitate the composition of the ohmic electrode.

The carrier concentration of the n-type crystal is controlled by the doping concentration of the donor impurity, and the carrier concentration of the p-type crystal is controlled by the doping concentration of the acceptor impurity and the electron beam irradiation processing conditions. In addition, in order to facilitate the formation of an ohmic electrode, a crystal which can easily realize a high carrier concentration may be further bonded for contact with a metal.

[0051]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to specific embodiments. ((Al _x Ga _{1 -x} ) _y In _{1 -y} N: 0 ≦ x ≦ 1, 0 ≦ y ≦ 1) A horizontal organometallic compound vapor phase epitaxy apparatus was used for producing a single crystal for a semiconductor laser diode. Sapphire as a substrate,
The growth procedures for Si, 6H-SiC and GaN are shown below.

(1) Sapphire Substrate FIG. 1 is a sectional view showing the structure of a semiconductor laser diode using a sapphire substrate. In FIG. 1, (0001)
After the organic cleaning of the sapphire substrate 1 having the surface as a crystal growth surface, the sapphire substrate 1 is set in a crystal growth section of a crystal growth apparatus. After evacuation of the growth furnace, hydrogen is supplied and the temperature is raised to about 1200 ° C. Thus, the hydrocarbon-based gas adhering to the surface of the sapphire substrate 1 is removed to some extent.

Next, the temperature of the sapphire substrate 1 is lowered to about 600 ° C., trimethylaluminum (TMA) and ammonia (NH ₃ ) are supplied, and the AlN layer 2 having a thickness of about 50 nm is formed on the sapphire substrate 1. To form Next, only the supply of TMA is stopped, the substrate temperature is raised to 1040 ° C., and TMA, trimethylgallium (TMG) and silane (SiH ₄ ) are supplied to grow the Si-doped n-type GaAlN layer 3 (n layer).

Once the wafer is taken out of the growth furnace, GaAl
After masking a part of the surface of the N layer 3 with SiO _2, it is returned to the growth furnace again, evacuated, supplied with hydrogen and NH ₃ , and heated to 1040 ° C. Next, TMG is supplied to grow a GaN layer 4 having a thickness of 0.5 μm on a portion not masked with SiO ₂ . Next, TMA and biscyclopentadienyl magnesium (Cp ₂ Mg) are further supplied to the doped GaAlN layer 5 (p
Layer) is grown 0.5 μm.

Next, the SiO ₂ used as the mask is removed with a hydrofluoric acid-based etchant. Next, after depositing an SiO ₂ layer 7 on the doped GaAlN layer 5 (p layer), the length is 1 mm and the width is 50 μm.
The window 7A is opened in the shape of a strip of m, and the window 7A is moved to a vacuum chamber, and the doped GaAlN layer 5 (p layer) is subjected to an electron beam irradiation process. Tables show typical electron beam irradiation processing conditions.

[Table 1]

Next, metal electrodes are formed on the windows 8 of the doped GaAlN layer 5 (p layer) and on the Si-doped n-type GaAlN layer 3 (n layer). This is the end of the crystal growth.

(2) Case of Si Substrate FIG. 2 shows the structure of a laser diode formed on a Si substrate. After the low-resistance n-type Si (111) surface substrate 8 is organically cleaned, the surface oxide is removed by a hydrofluoric acid-based etchant and the substrate 8 is placed on the crystal growth portion. After evacuation of the growth furnace, hydrogen is introduced, the substrate is heated to 1000 ° C., the surface of the substrate 8 is cleaned, and propane (C ₃ H ₈ ) or acetylene (C ₂ H ₂ ) is supplied. Thereby, a 3C-SiC thin film 9 is formed on the surface.

Thereafter, the inside of the growth furnace is once evacuated to remove excess gas. Next, hydrogen is supplied to the growth furnace to set the substrate temperature to 600 ° C., and TMA and NH ₃ are supplied to remove the AlN thin film 10.
It is formed on the 3C-SiC thin film 9. Next, only the supply of TMA is stopped, the substrate temperature is set to 1040 ° C., and TMG, TMA and SiH ₄ are supplied to grow the n-type GaAlN layer 11 (n layer).

Next, the supply of only TMA and SiH ₄ was stopped and GaN
The layer 12 is grown to 0.5 μm, and TMA and CP ₂ Mg are added again and Mg is added.
A doped GaAlN layer 13 (p layer) is grown to a thickness of 0.5 μm. Next, after depositing the SiO ₂ layer 15 on the Mg-doped GaAlN layer 13 (p-layer), a window 15A is opened in a rectangular shape of 1 mm long and 50 μm wide, transferred to a vacuum chamber, and the Mg-doped GaAlN layer 13 (p layer) is opened.
Layer) is irradiated with an electron beam. The irradiation conditions of the electron beam are the same as in the previous embodiment. Then, from the SiO ₂ layer 15 side, Mg-doped GaAl
An electrode 14A for the N layer 13 (p layer) is formed.
An electrode 14B for the n-type GaAlN layer 11 (n-layer) was formed on the back surface of the substrate 8.

(3) 6H-SiC substrate FIG. 3 shows a laser diode formed on a 6H-SiC substrate. The (0001) plane substrate 16 of the low-resistance n-type 6H-SiC is organically cleaned, etched with an aqua regia etchant, and then placed in a crystal growth part. After evacuation of the growth furnace, hydrogen is supplied and the temperature is increased to 1200 ° C. Next, hydrogen is supplied to the growth furnace, the substrate temperature is set to 1040 ° C., and TMG, SiH ₄ and NH ₃ are supplied to grow the n-type GaN buffer layer 17 to about 0.5 to 1 μm. Next, TMA is added, and n-type GaAlN is placed on the n-type GaN buffer layer 17.
A layer 18 (n-layer) is grown.

Next, on the n-type GaAlN layer 18, the Si
The GaN layers 19 were formed in the same structure, using the same gas, and under the same growth conditions as the laser diode using the substrate.
A 0.5 μm, Mg-doped GaAlN layer 20 (p layer) was formed to a thickness of 0.5 μm. Next, SiO ₂ is deposited on the Mg-doped GaAlN layer 20.
After the layer 22 is deposited, the window 2 is formed into a strip 1 mm long and 50 μm wide.
2A was opened, transferred to a vacuum chamber, and the Mg-doped GaAlN layer 20 (p layer) was irradiated with an electron beam. The irradiation conditions of the electron beam are the same as in the previous embodiment.

Then, from the SiO ₂ layer 22 side, Mg-doped GaAlN
An electrode 21A for the layer 20 (p layer) was formed, while an electrode 21B for the n-type GaAlN layer 18 (n layer) was formed on the back surface of the substrate 16.

(4) GaN Substrate FIG. 4 shows a laser diode formed on a GaN substrate.
After the low-resistance n-type GaN (0001) plane substrate 23 is organically cleaned and etched with a phosphoric acid + sulfuric acid-based etchant, the substrate 23 is placed in a crystal growth part. Next, after evacuation of the growth furnace, hydrogen and NH ₃ were supplied, and the substrate temperature was set to 1040.
C. and leave for 5 minutes. Next, TMG and SiH ₄ were further added to form an n-type GaN buffer layer 24 having a thickness of 0.5 to 1 μm.

Next, TMA was added to grow an n-type GaAlN layer 25. Next, on the n-type GaAlN layer 25, a GaN layer 26 is formed on the n-type GaAlN layer 25 in the same structure, using the same gas, and under the same growth conditions as the laser diode using the Si substrate.
A μm, Mg-doped GaAlN layer 27 (p layer) was formed to a thickness of 0.5 μm. Next, the SiO ₂ layer 2 is formed on the Mg-doped GaAlN layer 27.
After depositing No. 9, the window 29A is formed into a strip 1 mm long and 50 μm wide.
Is opened and transferred to a vacuum chamber, and the Mg-doped GaAlN layer 27 is removed.
(P layer) was irradiated with an electron beam. The irradiation conditions of the electron beam are the same as in the previous embodiment.

Then, from the SiO ₂ layer 29 side, Mg-doped GaAlN
An electrode 28A for the layer 27 (p layer) was formed, while an electrode 28B for the n-type GaAlN layer 25 (n layer) was formed on the back surface of the substrate 23.

The laser diodes having any of the above structures oscillated at room temperature.

In this specification, the following inventions have been recognized in addition to the above description. (1) An n-layer made of a gallium nitride-based compound semiconductor exhibiting n-type conductivity ((Al _x Ga _{1 -x} ) _y In _{1 -y} N: 0 ≦ x ≦ 1, 0 ≦ y ≦ 1); Gallium nitride based compound semiconductor ((A
l _{x '} Ga _1-x' ) _{y '} In _1-y' N: 0 ≤ x '≤ 1, 0 ≤ y' ≤ 1) (x = x 'or x
At least one pn junction is provided which is joined to a p-layer consisting of (x ', y = y' or y ≠ y '). (2) The n-layer and the p-layer are formed of a gallium nitride-based compound semiconductor having the same forbidden band width. (3) A feature in which the pn junction is formed by joining a layer made of a gallium nitride-based compound semiconductor having a relatively large forbidden band width and a layer made of a gallium nitride-based compound semiconductor having a relatively small forbidden band width. (4) A feature in which a layer having a relatively small forbidden band width is sandwiched between layers having the same or different forbidden band widths and mixed crystal compositions, and a layer having a relatively large forbidden band width. (5) A feature in which two or more layers having different forbidden band widths are stacked. (6) A feature in which a layer made of a gallium nitride-based compound semiconductor doped with an acceptor impurity is converted into a p-type layer by irradiating an electron beam. (7) The feature that the shape of the layer made of the p-type gallium nitride based compound semiconductor and the contact portion of the layer with the metal for electrode with respect to the layer is a strip shape. (8) Features of using sapphire, Si, 6H-SiC or GaN for the substrate.

[Brief description of the drawings]

FIG. 1 shows a specific example of the present invention fabricated on a sapphire substrate ((Al _x Ga _{1 -x} ) _y In _{1 -y} N: 0 ≦ x ≦ 1, 0 ≦ y ≦ 1)
Sectional drawing which showed the structure of the system semiconductor laser diode.

FIG. 2 shows a ((Al _x Ga _1-x ) _y In _1-y N: 0 ≦ x ≦ 1, 0 ≦ y ≦ 1) system according to a specific embodiment of the present invention fabricated on a Si substrate. FIG. 2 is a cross-sectional view illustrating a configuration of a semiconductor laser diode.

FIG. 3 shows ((Al _x Ga _1-x ) _y In _1-y N: 0 ≦ x ≦ 1, 0 ≦ y ≦ 1 according to one specific example of the present invention fabricated on a 6H-SiC substrate. FIG. 1 is a cross-sectional view illustrating a configuration of a semiconductor laser diode.

FIG. 4 shows ((Al _x Ga _1-x ) _y In _1-y N: 0 ≦ x ≦ 1, 0 ≦ y ≦ 1) according to a specific example of the present invention fabricated on a GaN substrate. FIG. 2 is a cross-sectional view illustrating a configuration of a semiconductor laser diode.

[Explanation of symbols]

1-sapphire (0001) plane substrate 2,9,17-AlN buffer layer 3,11,18,25-n type AlGaN layer (n layer) 4,12,19,26-GaN layer 5,13,20, 27-Mg doped AlGaN layer (p layer) 7, 15, 22, 29 {SiO ₂ layer 6A, 14A, 21A, 28A} electrode (Mg doped AlGaN layer)
6B, 14B, 21B, 28B} electrode (for n-type AlGaN layer (for n-layer))

 ──────────────────────────────────────────────────続 き Continuing from the front page (71) Applicant 591014950 Hiroshi Amano 2-104 Yamanote, Nato-ku, Nagoya-shi, Aichi Prefecture Takara Mansion Yamanote 508 (72) Inventor Nobuo Okazaki 1 Ochiai Nagahata, Kasuga-cho, Nishikasugai-gun, Aichi Prefecture Toyota Toyota Within Gosei Co., Ltd. (72) Inventor Katsuhide Shinbe 1, Ochiai, Nagahata, Kasuga-machi, Nishi-Kasugai-gun, Aichi Prefecture Inside Toyoda Gosei Co., Ltd. 72) Inventor Hiroshi Amano 2-21, Kamioka-cho, Meito-ku, Nagoya City, Aichi Prefecture Nijigaoka East Complex Room 25, Room 505

Claims (19)

[Claims] 1. A gallium nitride (GaN) substrate and an n-type conductivity formed above the gallium nitride (GaN) substrate ((Al _x1 Ga _{1 -x1} ) _y1 In _{1 -y1} N: 0 ≦ x1 ≦ 1,0 ≦ y1 ≦
1) and p-type conductivity ((Al _x2 Ga _1-x2 ) _y2 In _1-y2 N: 0 ≦ x2 ≦ 1,0
≦ y2 ≦ 1) and between the n-layer and the p-layer, the bandgap is narrower than the n-layer and the p-layer ((Al _x3 Ga _1-x3 ) _y3 In _1-y3 N:
A light emitting layer comprising: 0 ≦ x3 ≦ 1, 0 ≦ y3 ≦ 1, provided that x3 = y3 = 1 is not included). 2. The gallium nitride-based compound semiconductor light emitting device according to claim 1, wherein a buffer layer is formed on the gallium nitride (GaN) substrate. 3. The gallium nitride-based compound semiconductor light emitting device according to claim 2, wherein the buffer layer is gallium nitride (GaN). 4. The gallium nitride-based compound semiconductor light emitting device according to claim 3, wherein the buffer layer is of an n-type. 5. The gallium nitride based compound semiconductor light emitting device according to claim 1, wherein the gallium nitride (GaN) substrate is an n-type single crystal. 6. The light emitting layer according to claim 1, wherein the light emitting layer comprises a plurality of thin film crystals having a relatively large band gap and a plurality of thin film crystals having a relatively small band gap.
The gallium nitride-based compound semiconductor light-emitting device according to any one of the above items. 7. The gallium nitride-based compound according to claim 1, wherein a negative electrode for said n-layer is formed on a back surface of said gallium nitride (GaN) substrate. Semiconductor light emitting device. 8. The gallium nitride-based compound semiconductor light emitting device according to claim 1, wherein the light emitting layer is of an n-conduction type. 9. The method according to claim 1, wherein a region where at least one of the positive electrode and the negative electrode is joined has a high carrier concentration.
The gallium nitride-based compound semiconductor light-emitting device according to any one of the above items. 10. The semiconductor device according to claim 1, further comprising a layer made of a crystal which is in contact with at least one of the positive electrode and the negative electrode and which can easily realize a high carrier concentration.
The gallium nitride-based compound semiconductor light-emitting device according to claim 1. 11. The gallium nitride-based compound according to claim 1, wherein a main surface of the gallium nitride (GaN) substrate on which a crystal is grown is a (0001) plane. Semiconductor light emitting device. 12. The gallium nitride compound semiconductor light emitting device according to claim 1, wherein the gallium nitride (GaN) substrate has a low resistance. 13. The gallium nitride-based compound semiconductor light emitting device according to claim 1, wherein said n-layer is made of GaAlN. 14. The gallium nitride-based compound semiconductor light emitting device according to claim 1, wherein the p-layer is made of GaAlN. 15. The n-layer comprises silicon (Si), oxygen (O)
The gallium nitride according to any one of claims 1 to 14, wherein at least one donor impurity element among sulfur, sulfur (S), selenium (Se), and tellurium (Te) is added. Based compound semiconductor light emitting device. 16. The p-layer has at least one acceptor impurity element selected from beryllium (Be), magnesium (Mg), zinc (Zn), cadmium (Cd), and carbon (C). The gallium nitride-based compound semiconductor light-emitting device according to any one of claims 1 to 15, wherein 17. The gallium nitride according to claim 1, wherein the carrier concentration of the p-layer is controlled by a concentration of an acceptor impurity element and an electron beam irradiation condition. Based compound semiconductor light emitting device. 18. The gallium nitride compound semiconductor light emitting device according to claim 1, wherein the gallium nitride compound semiconductor light emitting device is a laser diode. 19. The gallium nitride-based compound semiconductor light emitting device according to claim 18, wherein a portion where the p layer and its positive electrode are joined has a strip shape.