JP2001168130A - Transfer wiring member, method of manufacturing the same, and wiring board - Google Patents

Abstract

(57) [Problem] To provide a transfer wiring member capable of easily forming a wiring portion and connecting the wiring portion to a terminal of a semiconductor pellet. SOLUTION: In a transfer wiring board in which a wiring portion and a connection portion are formed on a base substrate, a connection surface for connecting the connection portion to a wiring portion of a transferred wiring substrate is exposed, so that the wiring portion,
The connection portion is substantially covered with an insulating layer at the height of the connection surface, or also includes a connection surface connected to the wiring portion of the transferred wiring board of the connection portion, and the wiring portion and the connection portion, It is higher than the height of the connection surface, almost at the height of the connection surface, and is covered with an insulating layer. At the time of transfer, the wiring portion and the connection portion are transferred to the wiring substrate to be transferred via the insulating layer. And transfer-forming the wiring portion of the transfer member on the transfer-receiving wiring board,
The wiring portion of the transfer member and the wiring portion of the transferred wiring board are electrically connected so that the connection surface is in contact with the wiring portion of the transfer wiring board.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transfer wiring member capable of simultaneously forming a wiring portion and connecting a wiring during transfer, a method of manufacturing the same, and a wiring substrate using the transfer wiring member.

[0002]

2. Description of the Related Art In recent years, semiconductor devices have been increasingly integrated and improved in performance, and the number of terminals has been remarkably increased. Normally, as shown in FIG. 7A, a semiconductor pellet 410 on which a semiconductor element is mounted has a terminal portion (also referred to as a pad) 415 on a peripheral portion on one surface thereof.
Because it has a large number of terminals, the pitch between the terminals is narrow, and it is difficult to mount this directly on a printed circuit board. Generally, a semiconductor pellet is once mounted on a lead frame or the like,
The semiconductor device is mounted on a printed circuit board in the form of a semiconductor device in which the terminal interval is substantially enlarged. FIG. 7 (b)
FIG. 8 is a cross-sectional view taken along line C1-C2 in FIG. An example of a semiconductor device in which a semiconductor pellet is mounted on a lead frame is a QFP (Quad Flat Packa).
The ge) type is known to be particularly applicable to multiple terminals. QFP mounts a semiconductor pellet on the die pad, connects the tip of the inner lead, which has been subjected to surface treatment such as silver plating, to the terminal of the semiconductor pellet with a wire, performs sealing with a sealing resin, and thereafter, It has been developed as a structure in which the dam bar portion is cut and outer leads are provided so that it can handle multiple terminals.

However, the speed of signal processing of semiconductor devices has been increased,
Higher functionality has required more terminals. In QFP, the external terminal pitch has been narrowed to accommodate multiple terminals without increasing the package size. However, as the external terminal pitch becomes narrower, the width of the external terminals themselves becomes narrower, and the strength of the external terminals decreases. Therefore, it is difficult to cope with skew of the outer leads and to maintain coplanarity (flatness) in a post-process such as forming, and there is a problem that it is difficult to maintain package mounting accuracy during mounting. That is, even in QFP,
It has become impossible to cope with further multi-terminal semiconductor pellets.

To cope with this, BGA (Ball)
A plastic package called a Grid Array has been developed. This BGA usually has a semiconductor pellet mounted on one surface of a double-sided substrate and has conduction between terminals of the semiconductor pellet and external terminals (solder balls) through a spherical solder ball on the other surface. This is a package for compatibility. The BGA has the advantage that the interval between external terminals (pitch) can be increased even with the same number of external terminals as compared with the QFP in which external terminals are provided on four sides of the package, and the number of input / output terminals can be increased without complicating the semiconductor mounting process. I was able to respond. The BGA is electrically connected by a bonding wire from a terminal of the semiconductor pellet to a die pad on which a semiconductor pellet is mounted on one surface of a base material of a flat plate (resin plate) having rip resistance such as BT resin (bismaleide resin). On the other side, has external connections formed by two-dimensionally arranged solder balls in a grid or staggered pattern for electrical and physical connection to external circuits. In this structure, the pads are electrically connected to each other by wiring, through holes, and wiring. However, this BGA has a circuit for connecting terminals of a semiconductor pellet with bonding wires through plated-through holes, and an external connection portion (simply referred to as an external terminal portion) for mounting on a printed circuit board after being made into a semiconductor device. This is a complicated structure that is electrically connected, and has problems in reliability such as breakage of the through-hole portion due to the thermal expansion of the resin, and also has many problems in fabrication.

On the other hand, in order to increase the mounting density on a printed circuit board, a CSP (Chip Size Package) is used.
The development of e) is also active. A CSP (Chip Size Pack) that can respond to further increase in the number of terminals of the semiconductor pellet, enables mounting of the semiconductor pellet on a printed circuit board at a practical level, and can increase the mounting density.
Age) type semiconductor devices have been desired. Recently, a method in which a wiring portion formed by selective plating is provided on the terminal surface side of the semiconductor pellet and a second terminal portion different from the terminal of the semiconductor pellet and arranged in a two-dimensional manner may be attempted. It has become However, it has been difficult to easily form both the wiring portion and the connection between the wiring portion and the terminal of the semiconductor pellet.

[0006]

As described above, a wiring portion formed by selective plating is provided on the terminal surface side of the semiconductor pellet, which can cope with further increase in the number of terminals of the semiconductor pellet. For another type in which the second terminal portions are two-dimensionally arranged, a method for easily forming the wiring portion and connecting the wiring portion and the terminal of the semiconductor pellet has been required. . The present invention
In response to this, specifically, a wiring portion formed by selective plating is provided on the terminal surface side of the semiconductor pellet, and a second terminal portion different from the terminal of the semiconductor pellet is two-dimensionally formed. An object of the present invention is to provide a transfer wiring member capable of easily performing connection between a wiring portion and a terminal of a semiconductor pellet when forming a semiconductor device of an arrangement type, and to provide a manufacturing method thereof. It is. As a result, it is possible to cope with a further increase in the number of terminals of the semiconductor pellet, and to mount the semiconductor pellet on a printed circuit board at a practical level.
CSP (Chip S) that is more reliable than BGA
(size package) type semiconductor device.

[0007]

According to the present invention, there is provided a transfer wiring member according to the present invention, wherein a wiring portion formed by selective plating on a conductive surface of a base substrate is connected to the wiring portion at a predetermined position. , Provided in a column shape in a direction away from the base substrate,
A transfer member having a connection portion for connecting to a wiring portion of a transferred wiring substrate which is a wiring substrate to be transferred,
The wiring portion and the connection portion are covered with an insulating layer at almost the height of the connection surface so that the connection surface of the connection portion connected to the wiring portion of the transferred wiring board is exposed. The connection part connected to the wiring part of the transferred wiring board of the transfer part, and the wiring part and the connection part are covered with an insulating layer at a height higher than the height of the connection face and substantially at the height of the connection face, and In this case, the wiring portion and the connection portion are transferred to the wiring substrate to be transferred via the insulating layer, and the wiring portion of the transfer member is transferred to the wiring substrate to be transferred. Is electrically connected to the wiring part of the transfer member and the wiring part of the transfer-receiving wiring board by contacting the wiring part of the transfer wiring substrate. Alternatively, the transfer wiring member of the present invention may be configured such that the wiring portion formed by selective plating on the conductive surface of the base substrate and the wiring portion at a predetermined position are connected to the wiring portion in a direction perpendicular to the base substrate and away from the base substrate. A transfer member provided in a columnar shape and having a connection portion for connecting to a wiring portion of a transferred wiring substrate which is a wiring substrate to which the transfer is performed, and a wiring portion of the transferred wiring substrate of the connection portion. The connection portion also includes a connection surface, and the wiring portion and the connection portion are higher than the height of the connection surface and are covered with an ACP layer, and at the time of transfer, the wiring portion and the connection portion are connected via the ACP layer. Is transferred to the transferred wiring substrate, and the wiring portion of the transfer member is transferred to the transferred wiring substrate, and the ACP layer between the connection surface and the wiring portion of the transfer wiring substrate is electrically conductive by pressure. The wiring part of the transfer member and the wiring part of the transferred wiring board are electrically connected. It is characterized in that is intended to connect. In the above, the transferred wiring substrate is a semiconductor pellet alone or a wafer on which a number of semiconductor pellets are imposed. The ACP layer is made of A
nisotropic-conductive Pas
te (or Film) layer, which is a layer in which conductive particles such as silver particles are dispersed in an insulating resin. By applying pressure to a predetermined region, the conductive particles in the region are brought into contact with each other. State.

According to a method of manufacturing a transfer wiring member of the present invention, a wiring portion formed by selective plating on a conductive surface of a base substrate is connected to the wiring portion at a predetermined position. A transfer wiring member having a connection portion for connecting to a wiring portion of a transfer-receiving wiring board, which is a wiring board to which the transfer is performed, provided in a columnar shape in a direction away from the wiring board to which the transfer is performed. The wiring portion and the connection portion are covered with an insulating layer at almost the height of the connection surface so as to expose the connection surface connected to the wiring portion, and at the time of transfer, via the insulating layer. The wiring portion and the connecting portion are transferred to the transferred wiring substrate, and the wiring portion of the transfer member is transferred to the transferred wiring substrate, and the connection surface is directly in contact with the wiring portion of the transferred wiring substrate. And the wiring portion of the transfer member and the wiring portion of the transferred wiring board are A method of manufacturing a transfer wiring member for manufacturing a transfer wiring member that is to be pneumatically connected, comprising the steps of: (a) forming a selectively plated wiring portion on one surface of a base substrate in order; A wiring part forming step of forming, (b) an electrodeposition step of forming an insulating electrodeposition resin layer so as to cover the wiring part formed by selective plating, and (c) an opening for forming a connection part. An opening forming step for opening the electrodeposited resin layer; and (d) a metal plate, or by embedding a conductive paste, or by electrodepositing a conductive electrodeposited layer, thereby forming a connection portion in the opening. And forming a connection portion forming step. And in the above, the electrodeposition agent for forming the insulating layer by electrodeposition, a polyimide resin containing an ionic group, and an organic solvent capable of dissolving the polyimide resin,
An electrodeposition coating composition comprising water and an ionic compound having a different polarity from the ionic group.

Alternatively, the method for manufacturing a transfer wiring member according to the present invention comprises the steps of: connecting a wiring portion selectively plated to a conductive surface of a base substrate; connecting the wiring portion at a predetermined position; A transfer wiring member provided with a connection portion for connecting to a wiring portion of a transfer-receiving wiring substrate, which is a wiring substrate to be transferred, provided in a columnar shape in a direction away from the base substrate; The wiring portion and the connection portion are covered with an insulating layer at almost the height of the connection surface so that the connection surface connected to the wiring portion of the board is exposed, or Including the connection surface to connect with the wiring part,
The wiring portion and the connection portion are higher than the height of the connection surface and are covered with an insulating layer at substantially the height of the connection surface, and at the time of transfer, the wiring portion and the connection portion are interposed via the insulating layer. Is transferred to the wiring substrate to be transferred, and the wiring portion of the transfer member is transferred to the wiring substrate to be transferred, and the connection surface is directly in contact with the wiring portion of the transfer wiring substrate. A method for manufacturing a transfer wiring member for manufacturing a transfer wiring member for electrically connecting a wiring portion and a wiring portion of a transferred wiring board, comprising: A wiring portion forming step of forming a wiring portion formed by selective plating on one surface, and (f) plate making, by exposing a predetermined position of the wiring portion forming the connection portion, covering with a plating-resistant resist, Connecting part forming step of selectively plating the part,
(G) After removing the plating-resistant resist, the wiring surface and the connection portion are covered with an insulating layer at almost the height of the connection surface so that the connection surface is exposed, or the connection surface is also removed. Including
Wiring part and connection part are higher than the height of the connection surface, covered with an insulating layer, and further polished if necessary, so that the insulation layer is almost at the height of the connection surface, and the connection surface is exposed, And a step. And in the above, the insulating layer is formed by electrodeposition, wherein the electrodeposition agent for forming the insulating layer by electrodeposition is a polyimide resin containing an ionic group, and the polyimide resin An electrodeposition coating composition comprising a soluble organic solvent, water, and an ionic compound having a different polarity from the ionic group. Further, in the above, the insulating layer is formed by screen printing.

Alternatively, in the method of manufacturing a transfer wiring member according to the present invention, a wiring portion formed by selective plating on a conductive surface of a base substrate is connected to the wiring portion at a predetermined position. A transfer member provided in a columnar shape in a direction away from the base substrate, the connection portion being connected to a wiring portion of a transfer-receiving wiring substrate, which is a wiring substrate to which the transfer is performed. The wiring section also includes a connection surface connected to the wiring section of the transfer wiring board. The wiring section and the connection section are higher than the height of the connection surface and are covered with an ACP layer.
The wiring portion and the connection portion are transferred to the transferred wiring substrate via the CP layer, and the wiring portion of the transfer member is transferred and formed on the transferred wiring substrate. An ACP layer between the wiring portion and the conductive portion, the wiring portion of the transfer member and a wiring portion for electrically connecting the wiring portion of the transferred wiring substrate, for manufacturing a transfer wiring member,
A method for manufacturing a wiring member for transfer, in which (h) a wiring portion forming step of forming a wiring portion formed by selective plating on one surface of a base substrate, and (i) a connection portion by plate making. A connecting portion forming step of exposing a predetermined position of the wiring portion, covering with a plating resistant resist and selectively forming a connecting portion by plating, and (j) removing the plating resistant resist,
The connection part also includes a connection surface connected to the wiring part of the transferred wiring board, and the wiring part and the connection part are higher than the height of the connection surface,
And performing an ACP layer forming step of covering with an ACP layer.

In the above, the transferred wiring substrate is a semiconductor pellet alone or a wafer on which a number of semiconductor pellets are imposed.
Note that, in this case, the terminal surface of the semiconductor pellet is covered with an insulating flattening layer that is flattened to almost the entire surface except for the terminal region in conformity with the upper surface of the terminal of the semiconductor pellet.

A wiring board according to the present invention is characterized in that the transfer wiring board according to the present invention is used to form a wiring portion on a transferred wiring member and to connect the wiring portion by transfer. Things. In the above, the transferred wiring substrate is a semiconductor pellet alone or a wafer on which a number of semiconductor pellets are imposed.

[0013]

According to the transfer wiring member of the present invention having such a structure, at the time of transfer, the wiring portion and the connecting portion are transferred to the transferred wiring substrate, and the transfer member is transferred to the transferred wiring substrate. In addition to the transfer formation of the wiring portion, it is possible to provide a transfer wiring member that can easily electrically connect the wiring portion of the transfer member and the wiring portion of the transferred wiring substrate at the same time. Thereby, specifically, on the terminal surface side of the semiconductor pellet,
When manufacturing a semiconductor device of a type in which a wiring portion formed by selective plating is provided and a second terminal portion different from the terminal of the semiconductor pellet is arranged two-dimensionally, the wiring portion is formed and the wiring portion is formed. It is possible to provide a transfer wiring member that can easily connect a semiconductor pellet to a terminal. In other words, the CSP (C), which can cope with a further increase in the number of terminals of the semiconductor pellet, can mount the semiconductor pellet on a printed circuit board at a practical level, and is more excellent in reliability than the BGA.
It is possible to provide a semiconductor device of a (Hip Size Package) type. In addition, the transfer wiring member of the present invention may be an interposer for mounting a flip chip or the like on a wiring substrate or a semiconductor pellet.
It can be used as a wiring member for forming a GA (Ball Grid Array) type semiconductor device. Furthermore, the transfer wiring member of the present invention is a CSP (Chip S)
size package) type MCM
Needless to say, the present invention can be applied to a (Multi Chip Module) wiring board.

According to the method for manufacturing a transfer wiring member of the present invention, the transfer wiring member of the present invention can be manufactured by adopting such a structure. The insulating layer can be formed by electrodeposition subsequent to the plating process for forming the portion, and plate making for selective plating can be performed once or less, and the operation is simple. In particular, an electrodeposition agent for forming an insulating layer by electrodeposition is a polyimide resin containing an ionic group, an organic solvent capable of dissolving the polyimide resin, water, and an ionic compound having a different polarity from the ionic group. By using an electrodeposition coating composition comprising: the insulating layer can be made of polyimide, and the electrodeposition agent has good storage stability. According to the sixth aspect of the present invention, the connection portion is formed by selective plating subsequent to the selective plating of the wiring portion, and it is necessary to form a hole in the insulating layer for forming the connection portion as in the method of claim 4. Instead, the connection portion can be formed stably in quality only by repeating the plate making. According to the ninth aspect, similarly to the sixth aspect, following the selective plating of the wiring portion,
The connection portion is formed by selective plating, and the quality of the formation of the connection portion is stabilized by merely repeating the plate making without the necessity of perforating the insulating layer for forming the connection portion as in the method of claim 4. Since the ACP layer is used,
Its fabrication is further simplified.

The wiring board of the present invention having such a structure, specifically, on the terminal surface on the side where the terminals of the semiconductor pellet are formed, using the above-described transfer wiring member of the present invention. In addition, a wiring portion formed by selective plating is provided,
It is possible to provide a semiconductor device in which second terminals different from the terminals of the semiconductor pellet are two-dimensionally arranged. In other words, the CSP (C), which can cope with a further increase in the number of terminals of the semiconductor pellet, can mount the semiconductor pellet on a printed circuit board at a practical level, and is more excellent in reliability than the BGA.
It is possible to provide a semiconductor device of a (Hip Size Package) type.

[0016]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described with reference to the drawings. FIG. 1A is a schematic cross-sectional view of a first example of an embodiment of the transfer wiring member of the present invention.
FIG. 1B is a schematic sectional view of a second embodiment of the transfer wiring member according to the present invention, and FIG. 1C is a schematic view of a third embodiment of the transfer wiring member according to the present invention. FIG. 1D is a cross-sectional view.
FIG. 2 is a schematic cross-sectional view of a fourth embodiment of the transfer wiring member of the present invention, and FIG. 2 is a process cross-sectional view of the first embodiment of the method of manufacturing the transfer wiring member of the present invention. FIG. 3 is a process sectional view of a second example of the embodiment of the method for manufacturing a transfer wiring member of the present invention, and FIG. 4 is a third example of the embodiment of the method of manufacturing a transfer wiring member of the present invention. Example, a process sectional view of the fourth example,
FIG. 5 is a process sectional view of a fifth embodiment of the method for manufacturing a transfer wiring member of the present invention, and FIG. 6E is a schematic sectional view of an example of a wiring substrate (semiconductor device) of the present invention. Then, FIG. 6 (f)
FIGS. 6A to 6C show the arrangement of bumps (terminal portions).
FIG. 6E is a process sectional view for explaining the manufacturing method. FIG. 6F is viewed from the A1 side in FIG. 6E. 1 to 6, 110 is a base substrate (conductive substrate), 120 is a wiring portion, 130 is a connection portion, and 130S
Is a connection surface, 140 is an insulating layer, 140A is a hole, 145 is an electrodeposition resin layer, 145a is a hole, 160 and 165 are resist layers, 160A and 165A are openings, 170 is a resist (for a durable plate), and 170A is a resist. Opening, 180 is an ACP layer,
190 is a semiconductor pellet, 191 is a terminal, and 195 is a bump (terminal part).

First, a first embodiment of the transfer wiring member according to the present invention will be described with reference to FIG. In the first example, the wiring portion 120 formed by selective plating on the conductive surface of the base substrate 110 and the wiring portion 120 at a predetermined position are formed.
And a connection portion 130 provided in a columnar shape in a direction perpendicular to the surface of the base substrate 1110 and away from the base substrate 110 to be connected to a wiring portion of a transfer-receiving wiring substrate which is a wiring substrate to be transferred. The transfer member provided with the connecting portion 13
0S connection surface 130S connected to the wiring portion of the transferred wiring substrate
To expose the wiring portion 120 and the connection portion 130
Are covered with an insulating layer 140 at a height substantially equal to the connection surface 130S. Then, at the time of transfer, the wiring section 120 and the connection section 130 are connected via the insulating layer 140.
The transfer member is transferred to the transfer wiring board, and the wiring portion 130 of the transfer member is transferred to the transfer wiring substrate, and the connection surface 130S is directly in contact with the wiring portion of the transfer wiring substrate. The wiring section 130 is electrically connected to the wiring section of the transferred wiring board.

As the base substrate 110, the wiring section 12
0, a material that is easily peeled from the insulating layer 140 and has at least a surface on which a wiring portion is formed by plating is made conductive. Stainless steel is commonly used, but is not limited to this.

The wiring section 120 is made of a conductive layer formed by selective plating, and examples of the material include copper and copper alloy, nickel, nickel alloy, zinc, tin, chromium, gold, silver, platinum and the like. A known plating method can be applied as the plating method. From the viewpoint of conductivity and cost, a single layer of a copper plating layer and a copper alloy plating layer or a single layer of these as a main material, and a multilayer of nickel plating layers and the like are usually used.
Used.

The insulating layer 140 is preferably excellent in insulation, chemical stability, and strength, and is preferably an epoxy resin, a polyimide resin, or the like, but is not limited thereto. An electrodeposition resin layer may be used as the insulating layer 140.

The connecting portion 130 is formed of a metal plating layer, a conductive paste, or a conductive electrodeposition layer. Also in the case of the metal plating layer, copper or a copper alloy alone or a copper plating layer as a main material is used from the viewpoint of conductivity and cost.

Next, a second embodiment of the transfer wiring member according to the present invention will be described with reference to FIG. In the second example, as in the first example, the wiring portion 120 formed by selective plating on the conductive surface of the base substrate 110 and the wiring portion 120 at a predetermined position are connected to each other. A transfer member provided in a columnar shape in a direction away from the base substrate 110 and connected to a wiring portion of a transfer-receiving wiring substrate which is a wiring substrate to which the transfer is to be performed; The wiring section 120 is exposed such that the connection surface 130S connected to the wiring section of the transferred wiring board is exposed.
And the connecting portion 130 at substantially the height of the connecting surface 130S,
It is covered with an electrodeposition resin 145 which is an insulating layer,
At the time of transfer, the wiring portion 120 and the connection portion 130 are transferred to the transferred wiring substrate via the electrodeposition resin 145 which is the insulating layer, and the wiring portion 1 of the transfer member is transferred to the transferred wiring substrate.
30 is transferred and directly formed on the connection surface 130.
The wiring portion 130 of the transfer member is electrically connected to the wiring portion of the transferred wiring substrate by making S contact with the wiring portion of the transfer wiring substrate. In the case of this example, the base substrate 110 And a resist to form a durable plate for selectively plating the wiring portion 120, and the electrodeposition resin layer 14
5 is provided as an insulating layer only in the region where the wiring section 120 and the connection section 130 are formed. The same parts as those in the first example can be used for each part of the present example. The resist 170 is required to have a predetermined resolution and an excellent plating resistance, and is preferably of a good processability, and is not particularly limited. Specifically, a novolak type OMR negative resist (manufactured by Tokyo Ohka Kogyo Co., Ltd.) or the like can be used.

Next, a third embodiment of the transfer wiring member according to the present invention will be described with reference to FIG. In the third example, similarly to the first example, the wiring portion 120 formed by selective plating on the conductive surface of the base substrate 110 and the wiring portion 120 at a predetermined position are connected, and the wiring portion 120 is orthogonal to the base substrate 1110 surface. A transfer member provided with a connection portion 130 provided in a columnar shape in a direction away from the base substrate 110 and connected to a wiring portion of a transfer-receiving wiring substrate that is a transfer destination wiring substrate. The wiring section 120 and the connecting section 130 are also connected to the wiring section of the transfer-receiving wiring substrate 130, and the wiring section 120 and the connecting section 130 are higher than the height of the connecting face 130S and substantially equal to the height of the connecting face 130S. Is different from the first example. t2 is the time when the insulating layer 14 is transferred.
0 is excluded and the width is such that the connection surface 130S and the wiring portion of the transferred wiring substrate can directly contact each other. Otherwise, it is the same as the first example. The same parts as those in the first example can be used for each part of the present example.

Next, a fourth embodiment of the transfer wiring member according to the present invention will be described with reference to FIG. In the fourth example, as in the first example, the wiring portion 120 formed by selective plating on the conductive surface of the base substrate 110 and the wiring portion 120 at a predetermined position are connected to each other. A transfer member provided with a connection portion 130 provided in a columnar shape in a direction away from the base substrate 110 and connected to a wiring portion of a transfer-receiving wiring substrate that is a transfer destination wiring substrate. A connection surface 130S connected to the wiring portion of the transfer-receiving wiring substrate 130 is also provided. The wiring portion 120 and the connection portion 130 are higher than the connection surface 130S,
The ACP layer 1 is covered with the layer 180 when transferring.
The wiring portion and the connection portion are transferred to the transfer-receiving wiring substrate via 80, and the wiring portion of the transfer member is transfer-formed to the transfer-receiving wiring substrate. The ACP layer between the wiring portion and the wiring portion is made conductive, and the wiring portion of the transfer member and the wiring portion of the transferred wiring board are electrically connected. The ACP layer 180 is formed by dispersing conductive particles in an adhesive binder resin. As the particles, Ni, Au coating resin, etc.
Epoxy resin is used as the resin. ACP layer 180
Is such a thickness that the ACP layer between the connection surface 130S and the wiring portion of the transfer wiring board can be made conductive under a predetermined pressure. The other parts of this example can be the same as those of the first example.

Next, an embodiment of a method for manufacturing a transfer wiring member of the present invention will be described with reference to the drawings. First, a first example of an embodiment of a method for manufacturing a transfer wiring member of the present invention will be described with reference to FIG. In this example, the transfer wiring member of the first example shown in FIG. 1A is manufactured using the insulating layer 140 as an electrodeposition resin layer. First, a resist 160 having an opening 160A conforming to the shape of a wiring portion to be formed on a conductive surface of a conductive and peelable base substrate such as a stainless plate material (FIG. 2A).
To form (FIG. 2 (b)) The resist is not limited as long as it has a predetermined resolution, plating resistance, and good processability, but a dry film resist is preferable in view of its processability. Then
The wiring portion 120 is formed by plating in the opening 160A of the resist 160. (FIG. 2 (c)) From the viewpoint of conductivity and cost, a single layer of a copper plating layer and a copper alloy plating layer or a multilayer having a nickel plating layer or the like as a main material is usually used.
In some cases, nickel, nickel alloys, zinc, tin,
Chromium, gold, silver, platinum or the like may be used as the plating layer. A known plating method can be applied as the plating method.

Next, the resist 160 was removed (FIG. 2).
(D)) Thereafter, an insulating layer 140 made of an electrodeposition resin layer is formed by electrodeposition according to the height of the connection portion to be formed. (FIG. 2 (e)) As the polymer used for the electrodeposition liquid (electrodeposition agent) 155,
Examples include various anionic or cationic synthetic polymer resins having electrodeposition properties. As the anionic synthetic polymer resin, acrylic resin, polyester resin,
A maleated oil resin, a polybutadiene resin, an epoxy resin, a polyamide resin, a polyimide resin, or the like can be used alone or as a mixture of any combination of these resins. Further, the above-mentioned anionic synthetic resin may be used in combination with a crosslinkable resin such as a melamine resin, a phenol resin and a urethane resin. In addition, as the cationic synthetic polymer resin, an acrylic resin, an epoxy resin, a urethane resin, a polybutadiene resin, a polyamide resin, a polyimide resin, or the like can be used alone or as a mixture of any combination thereof. Further, the above cationic synthetic polymer resin and a crosslinkable resin such as a polyester resin and a urethane resin may be used in combination. Further, in order to impart tackiness to the polymer resin, a tackifying resin such as a rosin-based resin, a terpene-based resin, or a petroleum resin can be added as necessary. The polymer resin is subjected to an electrodeposition method in a state of being solubilized in water or neutralized by an alkaline or acidic substance in a production method described later, or in a water-dispersed state. That is, the anionic synthetic polymer resin is neutralized with amines such as trimethylamine, diethylamine, dimethylethanolamine, and diisopropanolamine, and with an inorganic alkali such as ammonia and potassium hydroxide. The cationic synthetic polymer resin is neutralized with an acid such as acetic acid, formic acid, propionic acid, and lactic acid. Then, the polymer resin solubilized in the neutralized water is used in a state of being diluted with water as a water dispersion type or a solution type.

In particular, from the viewpoint of insulation reliability, a preferable electrodeposition solution (electrodeposition agent) 155 includes a polyimide resin containing an ionic group, an organic solvent capable of dissolving the polyimide resin, water, An electrodeposition coating composition comprising an ionic compound having a different polarity from the group is exemplified. As the polyimide, any solvent may be used as long as it is soluble in a solvent and can maintain heat resistance, insulation properties and mechanical strength, and various aromatic acid dianhydrides and aromatic diamines are selected depending on the purpose and function. The polyimide is synthesized by heating and dehydrating these aromatic dianhydrides and aromatic diamines. In order to add a function of electrodeposition, a functional group and an ionic group are introduced. For example, a carboxylic acid is introduced. In this case, an aromatic diamine such as an aromatic diaminocarboxylic acid can be used. In order to give good adhesiveness, diaminodiphenyl sulfone or the like is introduced.

The preparation of an electrodeposition solution of polyimide for electrodepositing an electrodeposition coating composition for forming an insulating film is described in JP-B-51-15061 and JP-B-46-15061. No. 17415, JP-A-9-
Based on the description in Japanese Patent No. 104839, a carboxylic acid-containing polyimide having an imide bond and an amic acid, which is obtained as a result of charging and synthesizing an aromatic tetracarboxylic acid and an aromatic diamine component, is also synthesized by a combination of the methods described above. It is possible. Further, in addition to the aromatic tetracarboxylic acid and the aromatic diamine component, a carboxylic acid-containing monomer is charged in advance during the synthesis, and finally a polyimide varnish containing an imide bond, an amic acid, and a carboxylic acid functional group can be synthesized. In order to prepare an electrodeposition solution, a base such as an amine is added to the varnish, a part of the imide bond is further opened to form a neutralized salt, and water and various solvents are added as necessary. A polyimide electrodeposition solution can be manufactured. In Japanese Patent Publication No. 51-15061, a part of a polyimide or the like having a carboxyl group at a terminal in a main chain and having an imide bond in a repeating unit is reacted with ammonia, an amine or another base. A method for producing an electrodeposition solution of polyimide is described, in which a ring is opened, and an imide bond in a repeating unit is converted into an ammonium salt or an amine salt of amide carboxylic acid and dispersed by forcibly stirring in an aqueous solution containing a surfactant. ing. Japanese Patent Publication No. 46-17415 discloses a method for producing a polyimide having an imide bond in a repeating unit, by reacting an aromatic tetracarboxylic acid and an aromatic diamine component with each other in a phenol-based solvent by heating. A method for directly obtaining a solvent-soluble polyimide resin having a high conversion is described. Japanese Patent Application Laid-Open No. 9-104839 discloses that an aromatic diaminocarboxylic acid or the like is used as an aromatic diamine, and another aromatic tetracarboxylic acid and another aromatic diamine component are heated and reacted in a phenol solvent. It describes a method of directly obtaining an electrodeposition type polyimide resin having a high imidation ratio by imidization.

Here, the storage stability is increased by using a polyimide instead of a polyimide precursor as the polyimide. Polyimides that can be used are polycondensed by heating in an organic polar solvent such as N-methyl-2-pyrrolidone using substantially equal amounts of aromatic tetracarboxylic dianhydride and aromatic diamine. If necessary, a catalyst is added and the mixture is heated to 140 to 200 ° C. to remove water generated by the condensation out of the system.

The functional group to be introduced for electrodeposition, that is, the ionic group, which is an anionic group, includes, for example, a carboxylic acid group, a sulfonic acid group, a phosphoric acid group, a phenol group and the like as a cationic group. Is, for example, an amino group. When an anionic group is introduced, a carboxylic acid group is particularly preferable, and diaminobenzoic acid or the like is used as a monomer.

In the case of an anion electrodeposition solution, an electrodeposition polyimide having an anionic group dissolved in a solvent is neutralized with a basic compound, and an appropriate solvent and water are added. As the basic compound, triethylamine, triethanolamine, methylmorpholine and the like can be used. In the case of a cationic electrodeposition solution, a polyimide for an electrodeposition solution having a cationic group dissolved in a solvent is neutralized with an acidic compound, and an appropriate solvent and water are added. As acidic compounds, formic acid, lactic acid, acetic acid,
Butyric acid can be used.

A variety of solvents can be used. Considering the stability at the time of washing with water, a relatively lipophilic material is used, and the flowability after an appropriate electrodeposition can be adjusted.

As a method for emulsifying and dispersing the resin, any method can be used as long as it can be uniformly stirred, and an ultrasonic dispersion salt or the like can be used.

Next, a hole 145 reaching the wiring portion 120 is formed in the insulating layer 140 at a predetermined position where the connection portion is to be formed by laser or the like. (FIG. 2 (f)) As the laser, a UV-YAG laser or the like is used.

Next, a columnar connecting portion 130 connected to the wiring portion 120 is formed in the hole 145 by plating. Again,
As in the case of the plating of the wiring portion 120, from the viewpoint of conductivity and cost, a single layer of the copper plating layer and the copper alloy plating layer or a main material including these as a main material, and a multilayer having a nickel plating layer or the like are usually used. A known plating method is applied. (FIG. 2 (g)) In this manner, a transfer wiring substrate using the insulating layer 140 as an electrodeposition resin layer with the transfer wiring member of the first example shown in FIG. 1 (a) is manufactured.

(Modification) Instead of forming the insulating layer 140 made of the electrodeposited resin layer of the present embodiment, the insulating resin layer formed by the screen printing method is substantially replaced with the connecting surface 130S so that the connecting surface 130S of the connecting portion 130 is exposed. 1A, the transfer wiring member of the first example shown in FIG. 1A can be formed. Further, the connection portion may be formed not by metal plating but by embedding a conductive paste. As a method for embedding the conductive paste, a screen printing method and a squeegee method are generally used. Alternatively, the connection may be formed by electrodeposition of a conductive electrodeposition layer.

Next, a second example of the embodiment of the method for manufacturing a transfer wiring member of the present invention will be described with reference to FIG.
This example is a method of manufacturing a transfer wiring member made of a durable plate using the transfer wiring member of the second example shown in FIG. First, a resist 170 having an opening 170A conforming to the shape of a wiring portion to be formed is formed on a conductive surface of a conductive and peelable base substrate such as a stainless plate material (FIG. 3A). (FIG. 3 (b)) As the resist, a novolak type OMR negative type resist (manufactured by Tokyo Ohka Kogyo Co., Ltd.) or the like having a predetermined resolution, plating resistance and capable of repeated selective plating is used. You. The thickness of the resist 170 is preferably smaller than the thickness of the wiring portion 120 to be plated. Then
The wiring portion 120 is formed by plating in the opening 170A of the resist 170 (FIG. 3C). With the resist 170 attached, the height of the connecting portion 130 to be formed on the exposed wiring portion 120 is adjusted. An electrodeposition resin layer 145 is formed by electrodeposition. (FIG. 3D) The electrodeposition resin layer 145 is formed in the same manner as in the method of manufacturing the transfer wiring member of the first example. Next, in the same manner as in the method of the first example, the positions where the connection portions 120 are to be formed are aligned, and holes are formed in the electrodeposition resin layer 145. (FIG. 3E) Thereafter, a connection portion is formed in the hole 145A in the same manner as in the method of the first example. (FIG. 3 (f)) In this way, a transfer wiring member in which the insulating layer is the electrodeposited resin layer 145 in the transfer wiring member of the second example shown in FIG. 1 (b) is manufactured.

Next, a third example of the embodiment of the method for manufacturing a transfer wiring member of the present invention will be described with reference to FIG. The present example is a method for manufacturing the transfer wiring member of the first example shown in FIG. 1A, but differs from the first method and its modified example in that the wiring part 120 and the connection part 130 are formed. After the selective plating is formed, the insulating layer 140 is formed so as to cover the wiring section 120 and the connecting section 130, and then the thickness of the insulating layer 140 is controlled by polishing to expose the connecting surface of the connecting section 130. In the same manner as in the first example, the wiring section 1
20 is formed on the base substrate 110 by selective plating (FIG. 4D), and the plate for forming the connection part 130 is formed using a dry film resist in the same manner as the plate for forming the wiring part 120. Do it. (FIG. 4E) Resist 1 having opening 167A at the position of the connecting portion to be formed
67 is formed. Next, an opening 167 of the resist 167 is formed.
A connection portion 130 is formed on A by plating in the same manner as in the first example. (FIG. 4F) Thereafter, an insulating layer 140 is applied by screen printing so as to cover the entire wiring section 120 and the connecting section 130. (FIG. 4 (g)) After drying and heat treatment as necessary, the insulating layer 140 is polished to expose the connection surface 130S of the connection portion 130.
(FIG. 4 (h)) About t1, it is preferable that it is thin from a viewpoint of a grinding | polishing operation | work. Thus, the transfer wiring member of the first example shown in FIG. 1A is manufactured.

(Modification) In the method of the third example, the insulating layer 140 is not applied by screen printing so as to cover the entire wiring section 120 and the connecting section 130, and the connecting surface of the connecting section is exposed. Needless to say, a method of performing pattern printing and not performing polishing may be used. In the method of the third example, the insulating layer 140 can be formed by electrodeposition. Further, the connection portion may be formed not by metal plating but by embedding a conductive paste. As a method for embedding the conductive paste, a screen printing method and a squeegee method are generally used. Alternatively, the connection may be formed by electrodeposition of a conductive electrodeposition layer.

Next, a fourth embodiment of the method for manufacturing a transfer wiring member of the present invention will be described with reference to FIG. This example is a method of manufacturing the transfer wiring member of the third example shown in FIG. 1C, but after forming the wiring part 120 and the connection part 130 by selective plating similarly to the method of the third example. ,
The insulating layer 140 covers the wiring section 120 and the connecting section 130.
After the formation, the thickness of the insulating layer 140 is controlled by polishing to expose the connection surface of the connection portion 130. In this example, in the same manner as in the method of the third example, plate making for forming a connection portion was performed (FIG. 4F), and then the insulating layer 140 was formed on the connection portion 130 by a screen printing method. And a connecting surface 130S connected to the wiring portion of the wiring portion 120.
And the connection portion 130 are covered with an insulating layer at a height higher than the height of the connection surface 130S and substantially at the height of the connection surface 130S. (FIG. 4 (i)) At the time of transfer, the insulating layer 140 is removed during the transfer, and the connection surface 13 is removed.
The width at which O.sub.S and the wiring portion of the transferred wiring substrate can directly contact each other is preferably as small as possible. The state in which the connection surface 130S is thinly covered with the insulating layer 140 is used as a transfer wiring member as it is. In this case, at the time of transfer, via the insulating layer,
The wiring portion and the connection portion are transferred to the wiring substrate to be transferred, and the wiring portion of the wiring member for transfer is transferred to the wiring substrate to be transferred, and the connection surface directly contacts the wiring portion of the wiring substrate to be transferred. Thus, the wiring portion of the transfer wiring member and the wiring portion of the transfer-receiving wiring board are electrically connected.

Next, a fifth embodiment of the method for manufacturing a transfer wiring member according to the present invention will be described with reference to FIG. This example is a method of manufacturing the transfer wiring member of the fourth example shown in FIG. 1D, but the wiring part 120 and the connection part are similar to the method of the third example and the method of the fourth example. After selective plating is formed on the wiring 130 (FIG. 5F), the ACP layer is
0, it is formed so as to cover the entire connecting portion 130. (FIG. 5 (g)) As a method of forming the ACP layer, a dispense coating method is generally used.

Next, a method of using the transfer wiring member of the present invention will be described with reference to FIGS. 6 (a) to 6 (f). As an example, a method of using the transfer wiring member of the first example shown in FIG. 1A and transferring the wiring portion 120 to the terminal surface side of the semiconductor pellet via the insulating layer 140 is described. explain. First, the transfer wiring member of the first example shown in FIG. 1A (FIG. 6A) and the semiconductor pellet 190 (FIG.
(B)), the insulating layer 140 side of the transfer wiring member faces the terminal surface side of the semiconductor pellet 190 on which the terminal 191 is formed, and the connection surface 130S of the connection portion 130 is aligned with the corresponding terminal 191. Then, both are pressure-bonded via the insulating layer 140. Next, only the base substrate 110 is peeled off (FIG. 6C).
(D)) The wiring portion 120 is transferred to the terminal surface of the semiconductor pellet 190 on which the terminal 191 is formed, and the wiring portion 120 and the semiconductor pellet 19 are transferred via the terminal 191.
0 circuit (wiring). In this manner, the wiring section 120 of the transfer wiring member of the present invention can be transferred to the substrate to be transferred, and the wiring section 120 can be connected to the wiring of the substrate to be transferred.

Next, the first embodiment of the wiring board of the present invention will be described.
An example will be described. In this example, a wiring portion formed by selective plating is provided on a terminal surface which is a surface on which a terminal of a semiconductor pellet is formed, and a second terminal portion different from the terminal of the semiconductor pellet is two-dimensionally formed. Semiconductor devices arranged in
It is manufactured by the method shown in FIGS. 6A to 6E using the transfer wiring member of the first example shown in FIG. As described above, as shown in FIG. 6D, the wiring portion 120 was transferred and formed on the terminal surface side of the semiconductor pellet, and the wiring portion 120 was connected to the circuit (wiring) of the semiconductor pellet 190. Then, further, a bump (terminal portion) 19
5, the semiconductor device of this example can be obtained.
When forming the bumps (terminal portions) 195, surface treatment such as nickel plating and gold plating is performed as necessary. The arrangement of the bumps (terminal portions) 195 is, for example, as shown in FIG.
They are arranged two-dimensionally as shown in (f). Even if the terminals 415 are arranged on the terminal surface of the semiconductor pellet 190 as shown in FIG. 7, they can be arranged two-dimensionally as shown in FIG.

[0044]

EXAMPLES The present invention will be further described with reference to examples. (Example 1) Example 1 is a method for manufacturing the transfer wiring member of the first example shown in FIG. 2, and is shown in FIG. 1 (a) for forming the semiconductor device shown in FIG. 6 (e). In this embodiment, a transfer wiring member having the insulating layer 140 as an electrodeposited resin layer is manufactured. A description will be given based on FIGS. As the conductive substrate 110, a base substrate 110 (FIG. 2A) made of stainless steel (SUS304, manufactured by Nippon Steel Corporation) having a thickness of 20 μm is used.
After forming a film of a dry film resist 160 (AX110, manufactured by Asahi Kasei Corporation) having a thickness of 0 μm, the film is exposed and developed using a predetermined pattern plate to form an opening 1 in the shape of the wiring portion to be formed.
A resist layer 160 having 60A is formed (FIG. 2).
(B)) Under the following plating conditions, a copper plating layer was formed in the opening 160A to a thickness of 8 μm by electrolytic plating to form the wiring portion 120. (FIG. 2 (c)) The base substrate 110 and the phosphorous copper electrode are opposed to each other and immersed in a copper sulfate plating bath having the following composition, and the phosphorous copper electrode is used as the anode of the DC power supply and the conductive substrate 110 is used as the cathode. And a current density of 2 A / dm ² was supplied for 24 minutes to form a copper plating film having a thickness of about 8 μm on the exposed portion of the conductive substrate 110 not covered with the resist. (Composition of the copper sulfate plating bath) CuSO ₄ .5H ₂ 0 200 g / l H ₂ SO ₄ 50 g / l HCl 0.15 ml / l (60 ppm as Cl)

Next, after the resist 160 is stripped and removed with a predetermined stripping solution (FIG. 2D), the insulating layer 140 made of an electrodeposited resin layer is formed as follows according to the height of the connecting portion to be formed. Electrodeposited. (FIG. 2E) The base substrate 110 is opposed to a platinum electrode, immersed in an anion-type electrodeposition solution prepared as described below, and the base substrate 110 is used as an anode of a constant voltage power supply and a platinum electrode is used as a cathode. , And perform electrodeposition at a voltage of 150 V for 5 minutes.
After drying and heat treatment at 0 ° C. for 5 minutes, the base substrate 110
A 15 μm-thick electrodeposited resin layer (insulating layer 140) having a thickness of 15 μm was formed on the surface on the side where the wiring section 120 was formed so as to cover the entire wiring section 120. (FIG. 2E) A polyimide varnish was prepared as described below, and an electrodeposition solution was adjusted. <Production of Polyimide Varnish> A stainless steel squirrel stirrer, a nitrogen inlet tube, and a reflux condenser equipped with a cooling tube with a ball on a trap with a stopcock are attached to an 11-volume three-neck separable flask. While flowing in a nitrogen stream, the separable flask was placed in a silicone bath equipped with a temperature controller and heated. The reaction temperature is indicated by bath temperature. 3,
32.22 g (0.1 mol) of 4,3 ′, 4′-benzophenonetetracarboxylic dianhydride (hereinafter referred to as BTDA), bis (4- (3-aminophenoxy) phenyl)
21.63 g (0.05 mol) of sulfone (m-BAPS), 1.5 g (0.015 mol) of γ-valerolactone, 2.37 g (0.03 mol) of pyridine, NMP
200 g (abbreviation of N-methyl-2-pyrrolidone) and 30 g of toluene were added, and the mixture was stirred at room temperature for 30 minutes (200 rpm) in a silicon bath while passing nitrogen, and then heated to 18
The reaction is carried out at 0 ° C. for 1 hour with stirring at 200 rpm. Remove 15 ml of toluene-water distillate, air-cool,
BTDA 16.11 g (0.05 mol), 3,5 diaminobenzoic acid (hereinafter referred to as DABz) 15.22 g (0.
1 mol), 119 g of NMP and 30 g of toluene,
After stirring at room temperature for 30 minutes (200 rpm), the temperature was raised and the mixture was heated and stirred at 180 ° C., and the toluene-water distillate was 15 m.
Remove l. Thereafter, the reaction was completed by heating and stirring at 180 ° C. for 3 hours while removing the toluene-water distillate outside the system. A 20% polyimide varnish was obtained. <Preparation of electrodeposition liquid> 100 g of 20% concentration polyimide varnish
3SN (NMP: tetrahydrothiophene-1, l-
Dioxide = 1: 3 (weight) mixed solution) 150 g, benzyl alcohol 75 g, methylmorpholine 5.0 g
(Neutralization rate: 200%) and 30 g of water are stirred to prepare an aqueous electrodeposition solution. The obtained aqueous electrodeposition solution was prepared using polyimide 7.4.
%, PH 7.8, is a dark reddish brown transparent liquid. Thereafter, the electrodeposited resin portion was cured at a temperature of 200 ° C.

Next, a hole is formed in the electrodeposited resin layer 130 using a carbon dioxide gas laser to expose a predetermined portion of the wiring portion (FIG. 2F).
The connection part 130 filling the 40 was formed by plating. (Figure 2
(G)) The plating conditions such as the plating solution composition were the same as in the above-mentioned Cu plating, and only the plating time was changed.

Using the thus obtained transfer wiring member (corresponding to FIGS. 2 (g) and 1 (a)), a wiring is formed on the terminal surface side of a semiconductor pellet having a terminal shape as shown in FIG. The part 120 side is crimped (FIG. 6C), and the base substrate 110 is pressed.
The wiring portion 120 was transferred and formed. (FIG. 6 (d)) The pressure bonding conditions were as follows. Pressure 6 kgf / cm ² Temperature 200 ° C. Next, solder bumps were printed by a screen printing method, and reflowed at 260 ° C. to form bumps 195. (FIG. 6E) The semiconductor device thus obtained was mounted,
There was no problem in particular. The number of terminals of the semiconductor pellet is 500 pins, the pitch is 0.5 mm, and the bump arrangement is an area array arrangement.

(Embodiment 2) In Embodiment 2, the fourth embodiment shown in FIG.
In the method of manufacturing a transfer wiring member according to the example, the insulating layer 140 is screen-printed using the transfer wiring member in the form shown in FIG. 1A to form the semiconductor device shown in FIG. And further polished. This will be described with reference to FIGS. In the same manner as in the first embodiment, the conductive substrate 1
10 and 20 μm thick stainless steel (SUS304,
Using a base substrate 110 (FIG. 4 (a)) made of Nippon Steel Corporation, a 30 μm thick dry film resist 165 (AX110, manufactured by Asahi Kasei Kogyo Co., Ltd.)
After forming a film, a predetermined pattern plate is used to expose and develop to form a resist layer 165 having an opening 165A in the shape of a wiring portion to be formed (FIG. 4B). Then, a copper plating layer was formed in the opening 165A to a thickness of 8 μm by electrolytic plating to form the wiring portion 120.
(FIG. 4 (c)) Next, after the resist 160 was stripped and removed with a predetermined stripping solution (FIG. 4 (d)), similarly, a dry film resist 167 (AX110, manufactured by Asahi Kasei Kogyo) having a thickness of 30 μm was formed. After that, using a predetermined pattern plate, exposure and development are performed to form a resist layer 167 having an opening 167A in a position and a shape of a connecting portion to be formed (FIG. 4E). Similarly, the connection portion 130 was formed by plating. (FIG. 4F) The plating thickness was 50 μm.

Next, an insulating layer having the following composition was applied to the front surface by screen printing so as to cover the entire wiring section 120 and the connecting section 130, dried, heat-treated, and cured.
The insulating layer is FPP-301 manufactured by Central Glass Co., Ltd.
0 was used.

Next, the insulating layer 140 was polished until the connection surface 130S of the connection portion 130 was exposed, as described below, to obtain a target transfer wiring substrate. (Polishing method) Polishing was performed using a tape-shaped polishing sheet.

[0051]

According to the present invention, as described above, the wiring portion of the transfer wiring member is transferred to the wiring substrate to be transferred, and
At the same time, it is possible to provide a transfer wiring member capable of easily electrically connecting the wiring portion of the transfer wiring member and the wiring portion of the transferred wiring substrate, and to provide a manufacturing method thereof. Thus, specifically, a wiring portion formed by selective plating is provided on the terminal surface side of the semiconductor pellet, and a second terminal portion different from the terminal of the semiconductor pellet is two-dimensionally arranged. When manufacturing a semiconductor device, along with the formation of the wiring part,
The connection between the wiring portion and the terminal of the semiconductor pellet can be easily performed. In other words, the CSP (Chip Size Pack), which can cope with further increase in the number of terminals of the semiconductor pellet, mounts the semiconductor pellet on a printed board at a practical level, and is more reliable than BGA in terms of reliability.
age) type semiconductor device.

[Brief description of the drawings]

FIG. 1A is a schematic sectional view of a first example of an embodiment of a transfer wiring member of the present invention, and FIG. 1B is a view of an embodiment of the transfer wiring member of the present invention. FIG. 1C is a schematic sectional view of a second example, FIG. 1C is a schematic sectional view of a third example of the embodiment of the transfer wiring member of the present invention, and FIG. 1D is a transfer wiring member of the present invention. It is an outline sectional view of the 4th example of an embodiment of a member.

FIG. 2 is a process sectional view of a first example of an embodiment of a method for manufacturing a wiring member for transfer according to the present invention;

FIG. 3 is a process sectional view of a second example of the embodiment of the method for manufacturing a transfer wiring member according to the present invention;

FIG. 4 is a process sectional view of a third example and a fourth example of an embodiment of a method of manufacturing a transfer wiring member of the present invention.

FIG. 5 is a process sectional view of a fifth example of the embodiment of the method for manufacturing a transfer wiring member according to the present invention;

FIG. 6E is a wiring board (semiconductor device) of the present invention.
FIG. 6F is a schematic cross-sectional view of one example of FIG.
6 (a) to 6 (e) are process cross-sectional views for describing a manufacturing method thereof.

FIG. 7 is a diagram for explaining a semiconductor pellet and its terminal arrangement.

[Explanation of symbols]

 Reference Signs List 110 base substrate (conductive substrate) 120 wiring portion 130 connection portion 130S connection surface 140 insulating layer 140A hole 145 electrodeposition resin layer 145A hole 160, 165 resist layer 160A, 165A opening 170 resist (for durable plate) 170A opening 180 ACP layer 190 Semiconductor pellet 191 Terminal 195 Bump (terminal part)

Claims (13)

[Claims] 1. A wiring portion formed by selective plating on a conductive surface of a base substrate, connected to the wiring portion at a predetermined position, and provided in a columnar shape in a direction orthogonal to the base substrate and away from the base substrate. A transfer member provided with a connection portion for connecting to a wiring portion of a transferred wiring substrate, which is a wiring substrate to be transferred, and exposing a connection surface of the connection portion connected to the wiring portion of the transferred wiring substrate. So that the wiring part and the connection part are
Almost at the height of the connection surface, covered with an insulating layer, or
The connection part also includes a connection surface connected to the wiring part of the transferred wiring board, and the wiring part and the connection part are higher than the height of the connection surface,
Almost at the height of the connection surface, it is covered with an insulating layer, and at the time of transfer, the wiring portion and the connecting portion are transferred to the transferred wiring substrate via the insulating layer, and are transferred to the transferred wiring substrate. The wiring portion of the transfer member is transferred and formed, and the wiring surface of the transfer member is electrically connected to the wiring portion of the transferred wiring substrate so that the connection surface directly contacts the wiring portion of the transfer wiring substrate. A wiring member for transfer. 2. A wiring portion formed by selective plating on a conductive surface of the base substrate and connected to the wiring portion at a predetermined position, and provided in a columnar shape in a direction perpendicular to the base substrate and away from the base substrate. A transfer member including a connection portion for connecting to a wiring portion of a transferred wiring substrate, which is a wiring substrate to which the transfer is performed, and a connection surface for connecting the connection portion to the wiring portion of the transferred wiring substrate. The wiring part and the connection part are higher than the height of the connection surface and are covered with an ACP layer, and at the time of transfer, the wiring part and the connection part are transferred via the ACP layer to the wiring board to be transferred. The wiring portion of the transfer member is transferred to the transfer wiring substrate, and the ACP layer between the connection surface and the wiring portion of the transfer wiring substrate is made conductive by pressure. It electrically connects the wiring part and the wiring part of the transferred wiring substrate. A wiring member for transfer characterized by the above-mentioned. 3. The wiring substrate according to claim 1, wherein
A transfer wiring member, which is a semiconductor pellet alone or a wafer on which a number of semiconductor pellets are imposed. 4. A wiring portion formed by selective plating on a conductive surface of the base substrate and connected to the wiring portion at a predetermined position, and provided in a columnar shape in a direction perpendicular to the base substrate and away from the base substrate. A transfer wiring member having a connection portion for connecting to a wiring portion of a transferred wiring substrate, which is a wiring substrate to be transferred, and exposing a connection surface of the connection portion connected to the wiring portion of the transferred wiring substrate. In this manner, the wiring portion and the connection portion are covered with the insulating layer at almost the height of the connection surface, and at the time of transfer, the wiring portion and the connection portion are covered via the insulating layer. The transfer portion is formed on the transfer wiring substrate, and the wiring portion of the transfer member is transferred and formed on the transferred wiring substrate, and the connection surface is directly in contact with the wiring portion of the transfer wiring substrate. Transfer wiring for electrically connecting the wiring part of the transferred wiring board A method for manufacturing a transfer wiring member for manufacturing a member, comprising: (a) a wiring part forming step of forming a wiring part formed by selective plating on one surface of a base substrate; An electrodeposition step of forming an insulating electrodeposition resin layer so as to cover the wiring portion formed by selective plating,
(C) an opening forming step of opening an opening for forming a connection portion in the electrodeposited resin layer, and (d) metal plating or embedding a conductive paste, or
By electrodepositing a conductive electrodeposition layer, in the opening,
A method of manufacturing a transfer member, comprising: performing a connecting portion forming step of forming a connecting portion. 5. The electrodeposition agent according to claim 4, wherein the electrodeposition agent for forming the insulating layer by electrodeposition comprises a polyimide resin containing an ionic group, an organic solvent capable of dissolving the polyimide resin, water, A method for producing a wiring member for transfer, which is an electrodeposition coating composition comprising an ionic compound having a different group and a different polarity. 6. A wiring portion formed by selective plating on a conductive surface of a base substrate and connected to the wiring portion at a predetermined position, and are provided in a columnar shape in a direction orthogonal to the base substrate and away from the base substrate. A transfer wiring member having a connection portion for connecting to a wiring portion of a transferred wiring substrate, which is a wiring substrate to be transferred, and exposing a connection surface of the connection portion connected to the wiring portion of the transferred wiring substrate. In this manner, the wiring portion and the connection portion are covered with the insulating layer at almost the height of the connection surface, or the connection portion also includes the connection surface connected to the wiring portion of the transfer-receiving wiring board. Part and the connection part are higher than the height of the connection surface, and are covered with the insulating layer at substantially the height of the connection surface, and at the time of transfer, the wiring part and the connection part are interposed via the insulating layer. Is transferred to the transferred wiring board, and the wiring portion of the transfer member is transferred to the transferred wiring board. A transfer wiring member for directly connecting the wiring part of the transfer member and the wiring part of the transfer-receiving wiring board so that the connection surface directly contacts the wiring part of the transfer wiring board, A method for manufacturing a transfer wiring member for manufacturing, comprising: (e) a wiring portion forming step of forming a wiring portion formed by selective plating on one surface of a base substrate; A connecting portion forming step of exposing a predetermined position of a wiring portion forming a connecting portion, covering the connecting portion with a plating-resistant resist and selectively forming a connecting portion by plating, and (g) removing the plating-resistant resist, The wiring portion and the connection portion are covered with an insulating layer at almost the height of the connection surface so that the surface is exposed, or the wiring portion and the connection portion also include the connection surface. Higher than the height, covered with an insulating layer, further polished if necessary, The edge layer in substantially connection surface height, to expose the connecting surface, a manufacturing method of a transfer wiring member and performing an insulating layer forming step. 7. The method according to claim 6, wherein the insulating layer is formed by electrodeposition. 8. The electrodeposition agent according to claim 7, wherein the electrodeposition agent for forming the insulating layer by electrodeposition is a polyimide resin containing an ionic group, an organic solvent capable of dissolving the polyimide resin, water, A method for producing a wiring member for transfer, which is an electrodeposition coating composition comprising an ionic compound having a different group and a different polarity. 9. The method according to claim 6, wherein the insulating layer is formed by screen printing. 10. A wiring portion formed by selective plating on a conductive surface of a base substrate and connected to the wiring portion at a predetermined position, and are provided in a columnar shape in a direction orthogonal to the base substrate and away from the base substrate. A transfer member including a connection portion for connecting to a wiring portion of a transferred wiring substrate, which is a wiring substrate to which the transfer is performed, and a connection surface for connecting the connection portion to the wiring portion of the transferred wiring substrate. The wiring part and the connection part are higher than the height of the connection surface and are covered with an ACP layer, and at the time of transfer, the wiring part and the connection part are transferred via the ACP layer to the wiring board to be transferred. The wiring portion of the transfer member is transferred to the transfer wiring substrate, and the ACP layer between the connection surface and the wiring portion of the transfer wiring substrate is made conductive by pressure. It electrically connects the wiring section and the wiring section of the transferred wiring board. A method for manufacturing a transfer wiring member for manufacturing a transfer wiring member, comprising:
A wiring portion forming step of forming a wiring portion formed by selective plating on one surface of the base substrate; and (i) exposing a predetermined position of the wiring portion forming the connection portion by plate making, and using a plating-resistant resist. And (j) removing a plating-resistant resist, and further including a connection surface for connecting the connection portion to the wiring portion of the transfer-receiving wiring board. , The connection part is higher than the height of the connection surface,
A method of manufacturing a transfer wiring member, comprising performing an ACP layer forming step of covering with an ACP layer. 11. The method for manufacturing a wiring member for transfer according to claim 4, wherein the wiring substrate to be transferred is a semiconductor pellet alone or a wafer on which a number of semiconductor pellets are imposed. 12. A wiring board, wherein a wiring portion is formed on a transferred wiring member and the wiring portion is connected by transfer using the wiring substrate for transfer according to claim 1. 13. The wiring substrate according to claim 13, wherein the wiring substrate to be transferred is a semiconductor pellet alone or a wafer on which a number of semiconductor pellets are imposed.