JP2001035663A - Organic electroluminescence element display device and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To increase a numerical aperture and facilitate manufacture by joining a back substrate and a transparent substrate installed on the surface with a field effect transistor in which a driving electrode is connected to a metal electrode stacked on an organic material layer which emits light by injection of an electron or a hole on a transparent electrode of an organic EL element of a matrix-shaped luminescent part on the transparent substrate. SOLUTION: An organic EL element in each color luminescent part of red, green, and blue each having plural picture elements is constituted by stacking a transparent electrode 201 on a display side glass substrate 1; an organic material layer 202 containing at least one layer of light emitting organic EL material layer; and a metal electrode 203. One drain electrode 10D of two FETs arranged on the inner surface of a back glass substrate 21 and constituting a switching circuit together with a capacitor is connected to the metal electrode 203 to be used for driving through a connecting electrode 204. The FET is arranged in the back glass substrate 21 on the opposite side to light taking out direction and a numerical aperture is increased, and the display side glass substrate 1 and the back glass substrate 21 are simply laminated.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a display device for an organic electroluminescence device, and more particularly, to such an organic EL material utilizing electroluminescence (hereinafter, also referred to as EL) of an organic compound material which emits light by injection of electrons and holes. The present invention relates to an organic EL element provided with a light emitting layer composed of a thin film of the above, and an organic EL element display panel in which a plurality of the switching elements are arranged in a matrix.

[0002]

2. Description of the Related Art As a display capable of achieving low power consumption, high display quality, and thinness, an organic EL element display formed by arranging a plurality of organic EL elements in a matrix has attracted attention. As shown in FIG. 1, each organic EL element 200 has an electron injection mainly composed of an organic compound on a transparent substrate 1 such as a glass plate on which a transparent electrode 201 made of indium tin oxide (ITO) is formed. Layer, an electron transporting layer such as an electron transporting layer, a hole transporting layer such as a hole injection layer and a hole transporting layer, at least one organic material layer 202 including a light emitting layer, and a metal electrode 203. They are stacked. When a positive voltage is applied to the anode of the transparent electrode 201 and a negative voltage is applied to the cathode of the metal electrode 203, that is, a direct current is applied between the transparent electrode and the metal electrode, the light emitting layer in the organic material layer 202 emits light.

In an organic EL device, excitons are generated by recombination of electrons injected from a metal cathode and holes injected from a transparent anode into a light-emitting layer, and the excitons emit light in the process of deactivation. . Therefore, the organic EL element 200 can be electrically represented by an equivalent circuit as shown in FIG. As can be seen from the figure, the organic EL element has a capacitance component C
And an asymmetric conductive light-emitting diode component E coupled in parallel with the capacitance component. In the organic EL device, when a direct-current light emission drive voltage is applied between the electrodes, the charge is accumulated in the capacitance component C. When the charge exceeds the barrier voltage or the light emission threshold voltage inherent to the device, the transparent electrode (the diode component E Current starts flowing from the anode side) to the organic material layer serving as the light emitting layer, and emits light with an intensity proportional to the current. The characteristic of the voltage V-current I-luminance L of such an element is similar to the characteristic of the diode. The current I is extremely small at a voltage equal to or lower than the light emission threshold Vth, and rapidly increases at a voltage equal to or higher than the light emission threshold Vth. It is an increasing characteristic. The current I and the luminance L are almost proportional. Such an organic EL element exhibits light emission luminance in proportion to a current corresponding to the drive voltage when a drive voltage exceeding the light emission threshold Vth is applied to the element, and is driven when the drive voltage applied is equal to or lower than the light emission threshold Vth. No current flows and the emission luminance remains zero.

An organic EL element display device is a light emitting device having an image display array composed of a plurality of light emitting pixels arranged in a so-called matrix arranged in intersecting rows and columns, that is, organic EL elements. . As an example of a driving method of the organic EL element display device, there is a method called a simple matrix driving method. The display device of the simple matrix drive system arranges a plurality of anode lines and cathode lines in a matrix (lattice), and connects an organic EL element at each intersection of the anode lines and the cathode lines arranged in the matrix. One of the anode line and the cathode line is sequentially selected and scanned at a predetermined time interval, and the other line is driven by a drive source in synchronization with the scanning, so that the organic E at an arbitrary intersection position is obtained.
This is to make the L element emit light. In this method, since each organic EL element is turned on only for the access time, a large current and a high voltage are required to make a large screen.

[0005]

In order to increase the size of the screen of the display device, in addition to the organic EL device display device of the simple matrix drive system, an active matrix drive system can be considered. This is because the above-described anode line and cathode line are replaced with scanning signal lines and data signal lines, and a thin film transistor (TFT: Thin Film Trans
The organic EL element emits light by supplying a current to each pixel by switching using an istor). TFTs include elements made of p-Si and a-Si, metal oxide semiconductor field effect transistors, so-called MOS transistors.
−FET (Metal Oxide SemiconductorField Effect Tra
nsistor) (hereinafter also referred to as FET). For example, a MOS-FET is formed on a semiconductor such as a Si substrate.
Forming two inversion conduction regions, sequentially providing an oxide SiO ₂ thin film and a metal gate electrode on the substrate surface between the inversion conduction regions, and controlling the conductivity of the substrate surface by an electric field applied from the metal gate. is there.

Using an N-type FET as a driving transistor,
JP-A-10-161563 describes an active driving organic EL element display panel in which an organic EL element and an FET are arranged side by side in a light emitting region of a pixel on the same substrate.
In such a panel, since the area occupied by the FET in the light emitting region is large, there is a disadvantage that the aperture ratio of the panel is reduced. Therefore, an object of the present invention is to provide an organic EL element display device having a high aperture ratio of an organic EL element in a light emitting region.

[0007]

The organic electroluminescence element display device of the present invention has a display arrangement in which a plurality of light emitting portions are arranged in a matrix on a transparent substrate, and each of the light emitting portions is formed of an organic electroluminescent device. The organic electroluminescent element includes a transparent electrode formed on the transparent substrate, and at least one layer of an organic electroluminescent material layer formed on the transparent electrode and emitting light by injection of electrons and / or holes. An organic electroluminescence element display device comprising an organic material layer and a metal electrode formed on the organic material layer, wherein a plurality of field effect transistors each driving the organic electroluminescence element correspond to the display arrangement. A rear substrate disposed on the surface, and Driving electrodes is characterized in that bonding the rear substrate and said transparent substrate so as to be connected to the metal electrode.

In the organic electroluminescence device display device according to the present invention, the driving electrode of the field effect transistor has a connecting metal electrode directed to the metal electrode, and the connecting metal electrode is in contact with the metal electrode. It is characterized by. In the organic electroluminescence element display device of the present invention, the field effect transistor is an N-type field effect transistor that supplies electrons to the organic electroluminescence element and drives the organic electroluminescence element, and the driving electrode is a drain electrode. It is characterized by.

In the organic electroluminescence element display device according to the present invention, the metal electrode and the connection metal electrode are made of the same material. In the organic electroluminescence element display device of the present invention,
The transparent electrode is formed as a common continuous layer occupying a plurality of the light emitting units.

[0010] In the organic electroluminescence element display device according to the present invention, the organic material layer is formed as a common continuous layer occupying a plurality of the light emitting portions. In the organic electroluminescence element display device according to the present invention, the connection metal electrode has a protrusion.

In the organic electroluminescence element display device according to the present invention, the metal electrode has a projection. In the organic electroluminescence element display device of the present invention, an insulator protrusion is formed in a part of the transparent substrate in a region of each light emitting unit, and the protrusion of the metal electrode corresponds to the insulator protrusion. It is characterized by being formed.

[0012] In the organic electroluminescence element display device according to the present invention, the metal electrode has an opening insulating film exposing only the protruding portion. In the organic electroluminescence element display device according to the present invention, the N-type field effect transistors in the adjacent light emitting units are adjacent to each other, and the organic electroluminescence elements are adjacent to each other.

In the organic electroluminescence device display device according to the present invention, a source electrode of the N-type field effect transistor is connected to an electron supply side, and a drain electrode thereof is connected to the metal electrode. In the organic electroluminescence device display device according to the present invention, an address field effect transistor formed on the back substrate and connected to a gate electrode of the N type field effect transistor is provided.

In the organic electroluminescence element display device according to the present invention, the organic electroluminescence device display device further comprises a capacitor formed on the back substrate and connected to a gate electrode of the N-type field effect transistor. In the organic electroluminescence element display device of the present invention, an insulating film that covers the gate electrode and the source electrode of the N-type field effect transistor and has an opening exposing only the drain electrode of the N-type field effect transistor is provided. It is characterized by.

In the organic electroluminescence element display device according to the present invention, the N-type field effect transistors in the adjacent light emitting portions are symmetrically arranged about a common cathode line.
Further, in the manufacturing method of the present invention, a display arrangement in which a plurality of light emitting units are arranged in a matrix on a transparent substrate,
Each of the light emitting units includes an organic electroluminescent element, and the organic electroluminescent element is formed on the transparent electrode formed on the transparent substrate and on the transparent electrode by injection of at least one layer of electrons and / or holes. A method for manufacturing an organic electroluminescent element display device, comprising: an organic material layer including a light emitting organic electroluminescent material layer; and a metal electrode formed on the organic material layer. Forming a plurality of organic electroluminescent elements by sequentially laminating a transparent electrode, an organic material layer, and a metal electrode on a substrate, an organic electroluminescent element side substrate forming step of exposing at least a part of the metal electrode, and Field effect to form multiple field effect transistors on the back substrate corresponding to the light emitting part A transistor side substrate forming step, the driving electrodes of the field effect transistor is characterized in that it comprises a and a bonding step of bonding the rear substrate and said transparent substrate so as to be connected to the metal electrode.

In the step of forming the substrate on the field-effect transistor side in the method of manufacturing the organic electroluminescence element display device, a metal electrode for connection to the metal electrode connected to the driving electrode of the field-effect transistor is formed. In the combining step, the connection metal electrode and the metal electrode are brought into contact with each other. In the organic electroluminescence element side substrate forming step in the method of manufacturing an organic electroluminescence element display device, the transparent electrode is formed as a common continuous layer occupying a plurality of the light emitting portions.

In the organic electroluminescent element display device manufacturing method, in the organic electroluminescent element side substrate forming step, the organic material layer is formed as a common continuous layer occupying a plurality of the light emitting portions. . In the organic electroluminescence element display device manufacturing method, in the organic electroluminescence element side substrate forming step, a protrusion is formed on the metal electrode.

In the step of forming a field effect transistor side substrate in the method of manufacturing an organic electroluminescence element display device, an insulating film having an opening through which only the protruding portion of the metal electrode passes is formed on the connection metal electrode. It is characterized by. In the method for manufacturing an organic electroluminescence element display device, in the step of forming the substrate on the side of the field effect transistor, a protrusion is formed on the connection metal electrode.

In the organic electroluminescence element side substrate forming step in the method of manufacturing an organic electroluminescence element display device, an insulating film having an opening through which only the protruding portion of the connection metal electrode passes is formed on the metal electrode. It is characterized by the following.

[0020]

According to the display device of the present invention, the aperture ratio of the panel can be improved by disposing the FET on the side opposite to the light extraction direction of the organic EL device, that is, on the back surface, and a display device with high luminance can be realized. . Furthermore, an organic EL element display device using an active matrix driving method can be manufactured by a simple bonding process of the display-side organic EL element substrate and the back-side FET substrate.

[0021]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 3 shows a part of a display panel in an organic EL element display device according to an embodiment using an active matrix driving method. This display panel 109
On a transparent display substrate, three light-emitting portions (organic EL devices) arranged in a matrix and each of which has a red R, a green G, and a blue B
(Image display array) composed of a plurality of light-emitting pixels 111 composed of elements. Two F per light emitting part per pixel
The organic EL device 200 includes a switching circuit including the ETs 10 and 11 and the capacitor 300, and the organic EL element 200. Such a light emitting unit combination unit is integrated by the number of all pixels for each pixel, and a display-side substrate of an organic EL element display device having an image display array including a plurality of light emitting pixels arranged in a matrix is formed. ing.

On the glass display substrate of this organic EL element display device, a common cathode line 12 and a data signal line 13 extending in parallel with an organic EL element 200 and a capacitor 300 interposed therebetween are alternately provided. A common anode line 15 and a scanning signal line 16 are provided, which are electrically separated and orthogonally arranged and extend. The scanning signal line 16 is sequentially scanned in accordance with the RGB signals to the data signal line 13 to selectively emit light from the organic EL element 200 at the intersection pixel.

FIG. 4 shows the embodiment of the display panel shown in FIG.
2 shows a circuit configuration of one light emitting unit. FET 11 for address
Is connected to a scanning signal line 16 to which a scanning signal for scanning a row from the scanning circuit is supplied.
The source S of T11 is connected to a data signal line 13 to which a signal from a write circuit corresponding to data in the frame memory is supplied.

The drain D of the addressing FET 11 is connected to the gate G and the capacitor 300 of the driving N-type FET 10 for driving the organic EL element.
To the common cathode line 12 via The source S of the N-type FET 10 for driving the organic EL element is connected to the common cathode line 12, and the drain D of the FET 11 is connected to the metal cathode such as Al of the organic EL element 200, while the ITO anode of the organic EL element 200, It is connected to a common anode line 15 through a transparent electrode. The gate G of the FET 10 is also connected to the common cathode line 12 via the capacitor 300. The common cathode line 12 and the common anode line 15 are connected to a power supply circuit and controlled respectively.

The light emission control operation of the unit pixel of the display panel 109 in which a plurality of such circuits are arranged in rows and columns is as follows. When an ON voltage is supplied to the gate G of the FET 11 from the scanning signal line 16, the voltage of the data supplied to the source S of the FET 11 is transmitted to the drain D. When an off voltage is supplied to the gate G of the FET 11, F
ET11 is cut off, and the voltage of the data supplied to the source S is not transmitted to the drain.

Therefore, while the gate G of the FET 11 is in the ON voltage, the voltage of the source S is charged in the capacitor 300, and the voltage is supplied to the gate G of the FET 10. F
The ET 10 becomes conductive, and a current flows from the drain D to the source S based on the gate voltage and the voltage applied from the power supply circuit to the drain D through the common anode line 15 and the organic EL element 200, and the organic EL element 200 emits light with the corresponding luminance. Let me know.

When the gate G of the FET 11 is turned off, the FET 11 is closed, the voltage of the gate G is held by the electric charge accumulated in the capacitor 300, the current is maintained for a predetermined time, and the light emission of the organic EL element 200 is performed. Is also maintained. As shown in FIG.
The L element 200 includes an organic material layer including a transparent electrode 201 formed on the display-side transparent substrate 1 and at least one organic electroluminescent material layer formed on the transparent electrode and emitting light by injection of electrons and / or holes. 202 and a metal electrode 203 formed on the organic material layer. Organic EL
The element display device has a rear substrate 21 on the rear surface of the transparent substrate 1 on the display side, and a switching circuit including a field effect transistor 10 for driving the organic EL element 200 is arranged on the inner surface thereof in correspondence with the display arrangement. ing. The rear substrate 21 and the display side transparent substrate 1 are
The driving electrode of 0, that is, the drain electrode 10D is joined so as to be connected to the metal electrode 203 of the corresponding organic EL element. As shown in FIG. 5, the drain electrode 10D of the field-effect transistor is connected to the connection metal electrode 204, and the connection metal electrode 204 is in contact with the metal electrode 203. The metal electrode 203 and the connection metal electrode 204 are made of the same material.

Next, a process of manufacturing the monochrome display panel 109 of the organic EL element display device will be described. (1) As shown in FIGS. 6 to 12, an ITO electrode and various lines are formed on the transparent substrate 1 on the display side, that is, on an inner surface, and an insulating film is formed thereon to produce an organic EL element side substrate. I do.

First, as shown in FIG.
SiO to form protrusions on the poles _TwoEtc.
The insulating protrusion 50 made of insulating material to be
It is formed at the center of a region to be a light emitting portion on the substrate 1.
That is, the lamination with the back side substrate described later is improved.
Therefore, the insulator protrusion 50 is provided. Insulation protrusion
50 can be provided not only one but also a plurality in the connection area.
Wear. Furthermore, low resistance such as Al on the glass substrate 1
Anode line 15 or bus made of metal
The lines are also formed separately around the insulator protrusions 50.
As shown in FIG. 6, the common anode line 15 is
To define the opening, that is, to define the light emitting area
To form a lattice stitch.

Next, as shown in FIG. 6, the insulating protrusion 50 on the glass substrate 1 and the common anode line 15
A transparent electrode (anode) 201 made of TO is continuously and uniformly formed. As a result, an ITO anode that can be seen from the matrix-shaped openings partitioned by the common anode line 15 is formed. In this organic EL element display device, an ITO transparent electrode (anode) 201 of the organic EL element is commonly connected to a common anode line 15 of a bus line.

As shown in FIG. 8, the common anode line 15 can be formed not on the glass substrate 1 but on the ITO anode 201. Although not shown, the insulator protruding portion 50 can also be formed on the ITO anode 201 with a partial thickness change instead of the glass substrate 1. Next, FIG.
As shown in (1), an insulating layer 31 is formed on the ITO anode 201 along the common anode line 15 in a lattice frame shape.

Next, as shown in FIG. 10, organic material layers are sequentially formed on the insulating layer 31 and the ITO anode 201.
That is, a hole injection layer, a hole transport layer, an organic light emitting layer, and an electron injection layer are sequentially formed on the anode transparent electrode 201, and the organic material layer 202 is formed continuously and uniformly. Here, in order to form a color display panel, R, G, and B are used by using a predetermined film forming mask in which an opening is located above the transparent electrode 201.
The light emitting organic EL media described above can be independently formed into a film having a predetermined thickness in each group by mask vapor deposition.

Next, after forming the organic material layer, as shown in FIG. 11, a metal having a low work function such as Al-Li is vapor-deposited on a portion corresponding to the opening of the formed organic material layer 202 by a mask. Alternatively, a film is independently formed as the island-shaped cathode metal electrode 203 using a means such as sputtering. The thickness of the metal electrodes 203 which are divided and arranged in the form of a matrix may be thick as long as there is no problem. The portion corresponding to the insulator protrusion 50 on the glass substrate 1 is the metal electrode 2
03 projection. The protruding portion of the metal electrode 203 becomes an electrical connection region.

Thus, the organic EL element side substrate shown in FIG. 12 is manufactured. Here, the protruding portion is provided on the metal electrode of the display-side substrate. However, the protruding portion may be provided on the connecting metal electrode 204 of the rear-side substrate. in this case,
As shown in FIG. 13, a flat metal electrode 203 without protrusions
An insulating film 32 having an opening corresponding to the protruding portion of the connecting metal electrode 204 on the rear-side substrate and defining an electrical connection region through which the protruding metal electrode 204 passes is provided thereon. This is to ensure insulation between the metal electrode 203 and the organic material layer 202 except for the electrode protrusions on the rear substrate. The portion of the metal electrode 203 exposed from the opening of the insulating film 32 becomes an electrical connection region.

(2) Next, an FET-side substrate is manufactured. As shown in FIG. 14, a scanning signal line 16 with a gate electrode 11G of a lower addressing FET 11 is formed on a rear substrate 21 using a metal having a low resistivity such as Al. At the same time, one electrode 301 of the capacitor 300 and the gate electrode 10G of the driving FET 10 connected thereto are also formed.

An insulating layer 33 made of a SiO ₂ insulating material is formed on the rear substrate 21 provided with the respective conductive portions to insulate the scanning signal lines 16 from other wirings. Insulating layer 3
Reference numeral 3 functions as an oxide SiO ₂ thin film of the FETs 10 and 11 and also functions as a dielectric of the capacitor 300, in addition to a wiring insulating function. In the insulating layer 33, a contact hole CH for the drain electrode 11D of the FET 11 is formed.

Next, the TFT 11 (TFT for address)
A switching circuit such as a TFT 10 (drive FET) is formed. As shown in FIG.
An amorphous silicon layer (a-Si) and an amorphous silicon layer (n ⁺ -a-Si) were formed by doping with N-type impurities at predetermined positions for 10 and 11, respectively, and then a predetermined mask was used. Etching is performed to form channel portions of the respective FETs, and the FET regions 10a,
1a is formed. Here, the driving FET 10 is an N-type, but the addressing FET 11 may be an N-type or a P-type. Thus, the FET regions 10a, 11a on the insulating layer 33
a, the source and drain electrodes 10S, 10
D and 11D are formed. The source electrode 10S is connected to the adjacent F
The drain electrode 10D is connected to the transparent electrode 201 of the organic EL element 200 so as to connect the FET region 10a for ET10.
It is formed so that it may face. The drain electrode 11D of the FET 11 is extended to the FET region 11a via a contact hole for connecting a capacitor and a drain.

Next, as shown in FIG. 15, the data signal line 13 integrated with the source 11S of the FET 11 is formed on the insulating layer 33 so as to cross the scanning signal line 16. The source 11S is on the opposite side of the drain 11D. Similarly, the common cathode line 12 is formed on the insulating layer 33 so as to cross the scanning signal line 16. The common cathode line 12 is connected to the driving FET 1 connected thereto.
The film is integrally formed so as to be connected to the 0 source electrode 10S and at the same time to be connected to the other electrode 302 of the capacitor 300.

In this embodiment, the protruding portion is provided on the metal electrode of the display-side substrate. On the contrary, when the protruding portion is provided on the connection electrode of the back-side substrate, the metal or metal shown by the two-dot chain line in FIG. The insulating protrusion 51 can be provided on a portion of the insulating film 33 corresponding to the metal electrode of the display-side substrate. next,
After forming a switching circuit including a capacitor and a connection line, a connection metal electrode for connecting to a display-side metal electrode is formed to be connected to the drain 10D. That is, as shown in FIG. 16, the opening insulating layer 34 having an opening exposing the drain electrode 10D of the driving FET 10
Is formed on the switching circuit.

Next, as shown in FIG.
The connection metal electrode 2 is formed in the opening of the insulating film 34 exposing only D.
04 is formed by mask evaporation, and the connection metal electrode 204 connected to the drain 10D is connected. Next, as shown in FIGS. 18 and 19, an insulating film 35 having an opening is further formed on the connecting metal electrode 204, and the opening is used to connect the metal electrode 203 of the display side substrate to the back side substrate. A connection region with the metal electrode 204 is determined.

Next, as a bonding step, a metal electrode 20 is formed.
The display area and the back side substrate are attached to each other by aligning the connection area between the third metal electrode 3 and the connection metal electrode 204, and are bonded together by heating. Thus, the organic EL element display device shown in FIG. 5 is manufactured. Further, in a state where the bonded metal electrode 203 and the connection metal electrode 204 are in contact with each other, the inside may be evacuated to seal the periphery of both substrates.

As described above, two pixels adjacent to each other in the extension direction of the scanning signal line 16 are connected to the organic EL element.
An organic electroluminescence element display device in which the arrangement of the N-type FEET is symmetric about the common cathode line 12 is manufactured.

[0043]

As described above, according to the organic EL device display device of the present invention, the display-side organic EL device substrate and the back-side FET
Since the display panel is simply attached to the substrate, a high-definition full-color display that has a high aperture ratio of the organic EL element in the light emitting region and is easy to manufacture can be realized.

[Brief description of the drawings]

FIG. 1 is a partially enlarged cross-sectional view of an organic EL element in a display device.

FIG. 2 is a diagram showing an equivalent circuit of an organic EL element.

FIG. 3 is a plan view showing a part of a display panel in an active matrix driving type organic EL element display device according to an embodiment of the present invention, as viewed from the display side.

FIG. 4 is a circuit diagram showing FETs and organic EL elements in a panel section in the organic EL element display device according to the embodiment of the present invention.

FIG. 5 is a schematic partial cross-sectional view of a display panel of an organic EL element display device according to an example of the present invention.

FIG. 6 is a schematic partial plan view of a display-side substrate in a process of manufacturing a display panel of an organic EL element display device according to an example of the present invention.

FIG. 7 is a sectional view taken along line AA in FIG. 6;

FIG. 8 is a schematic partial cross-sectional view of a display substrate in a process of manufacturing a display panel of an organic EL element display device according to another embodiment of the present invention.

FIG. 9 is a schematic partial plan view of a display-side substrate in a manufacturing process of a display panel of an organic EL element display device according to an example of the present invention.

FIG. 10 is a schematic partial plan view of a display-side substrate in a process of manufacturing a display panel of an organic EL element display device according to an example of the present invention.

FIG. 11 is a schematic partial plan view of a display-side substrate in a manufacturing process of a display panel of an organic EL element display device according to an example of the present invention.

FIG. 12 is a sectional view taken along line AA in FIG. 11;

FIG. 13 is a schematic partial plan view of a display-side substrate in a process of manufacturing a display panel of an organic EL element display device according to another embodiment of the present invention.

FIG. 14 is a schematic partial plan view of a rear substrate in a process of manufacturing a display panel of an organic EL device display device according to an example of the present invention.

FIG. 15 is a schematic partial plan view of a rear substrate in a process of manufacturing a display panel of an organic EL device display device according to an example of the present invention.

FIG. 16 is a schematic partial plan view of a rear substrate in a process of manufacturing a display panel of an organic EL device display device according to an example of the present invention.

FIG. 17 is a schematic partial plan view of a rear substrate in a process of manufacturing a display panel of an organic EL element display device according to an example of the present invention.

FIG. 18 is a schematic partial plan view of a rear substrate in a process of manufacturing a display panel of an organic EL element display device according to an example of the present invention.

FIG. 19 is a sectional view taken along line AA in FIG. 18;

[Explanation of symbols]

 Reference Signs List 1 substrate 3 insulating layer 4 organic thin film 5, 6 metal electrode 10, 11 FET S, 10S, 11S source electrode D, 10D, 11D drain electrode G, 10G, 11G gate electrode 12 cathode line 13 data signal line 15 anode line 16 scanning Signal line 109 Display panel 200 Organic EL element 300 Capacitor

Continued on the front page F term (reference) 3K007 AB00 AB04 AB18 BA06 CA01 CB01 DA00 DB03 EB00 FA01 5C094 AA14 AA22 AA43 BA03 BA27 CA19 DA09 EA05 EB02

Claims (24)

[Claims] 1. A transparent substrate having a display arrangement in which a plurality of light emitting units are arranged in a matrix, each of the light emitting units includes an organic electroluminescent element, and the organic electroluminescent element is disposed on the transparent substrate. An organic electroluminescent element display device comprising a transparent electrode, an organic material layer including at least one layer of an organic electroluminescent material layer that emits light by injection of electrons and / or holes, and a metal electrode, which are sequentially stacked, each comprising: A plurality of field effect transistors for driving the organic electroluminescence element have a back substrate disposed on a surface corresponding to the display arrangement, and a driving electrode of the field effect transistor is connected to the metal electrode. Bonding the back substrate and the transparent substrate to an organic electroluminescent device Nessence element display device. 2. The organic electrode according to claim 1, wherein the driving electrode of the field-effect transistor has a connection metal electrode facing the metal electrode, and the connection metal electrode is in contact with the metal electrode. Electroluminescence element display device. 3. The organic electroluminescence element display device according to claim 2, wherein the metal electrode and the connection metal electrode are made of the same material. 4. The field effect transistor according to claim 1, wherein said field effect transistor is an N-type field effect transistor for supplying electrons to said organic electroluminescence element to drive said element, and a driving electrode thereof is a drain electrode.
The organic electroluminescence element display device according to the above. 5. The organic electroluminescence element display according to claim 1, wherein the transparent electrode is formed as a common continuous layer occupying a plurality of the light emitting portions. 6. The organic electroluminescence element display according to claim 1, wherein the organic material layer is formed as a common continuous layer occupying a plurality of the light emitting portions. 7. The organic electroluminescence element display device according to claim 2, wherein the connection metal electrode has a protrusion. 8. The organic electroluminescence element display according to claim 1, wherein the metal electrode has a protrusion. 9. The method according to claim 9, wherein an insulating protrusion is formed in a part of the transparent substrate in a region of each light emitting unit, and the protrusion of the metal electrode is formed corresponding to the insulating protrusion. The organic electroluminescence element display device according to claim 8, wherein 10. The organic electroluminescence element display device according to claim 8, wherein the metal electrode has an opening insulating film exposing only the protrusion. 11. The organic electroluminescent element display device according to claim 4, wherein the N-type field effect transistors in the adjacent light emitting units are adjacent to each other, and the organic electroluminescent elements are adjacent to each other. 12. The organic electroluminescence device display according to claim 4, wherein a source electrode of the N-type field effect transistor is connected to an electron supply side, and a drain electrode thereof is connected to the metal electrode. 13. The semiconductor device according to claim 1, wherein said N is formed on said back substrate.
5. The organic electroluminescent device display device according to claim 4, further comprising an address field effect transistor connected to a gate electrode of the field effect transistor. 14. The semiconductor device according to claim 1, wherein said N is formed on said rear substrate.
5. The organic electroluminescence device display device according to claim 4, further comprising a capacitor connected to a gate electrode of the field effect transistor. 15. An insulating film which covers a gate electrode and a source electrode of the N-type field-effect transistor and has an opening exposing only a drain electrode of the N-type field-effect transistor is provided. The organic electroluminescence element display device according to the above. 16. The N-type field effect transistors in adjacent light emitting units are symmetrically arranged about a common cathode line.
The organic electroluminescence element display device according to the above. 17. A display arrangement in which a plurality of light emitting units are arranged in a matrix on a transparent substrate, each of the light emitting units includes an organic electroluminescent element, and the organic electroluminescent element is disposed on the transparent substrate. A method for manufacturing an organic electroluminescent element display device, comprising: a transparent electrode, at least one organic material layer including an organic electroluminescent material layer that emits light by injection of electrons and / or holes, and a metal electrode sequentially laminated. A plurality of organic electroluminescent elements formed by sequentially laminating a transparent electrode, an organic material layer, and a metal electrode on a transparent substrate corresponding to the plurality of light emitting portions, and exposing at least a part of the metal electrode; An element-side substrate forming step, and a plurality of electric fields on a rear substrate corresponding to the plurality of light-emitting portions. And a bonding step of bonding the back substrate and the transparent substrate such that a driving electrode of the field effect transistor is connected to the metal electrode. A method for manufacturing an organic electroluminescence element display device, comprising: 18. The method according to claim 18, wherein in the step of forming the field-effect transistor-side substrate, a connection metal electrode is formed toward the metal electrode connected to the drive electrode of the field-effect transistor, and in the bonding step, the connection metal electrode is formed. 18. The method according to claim 17, wherein the metal electrode is brought into contact with the metal electrode. 19. The manufacturing method according to claim 17, wherein in the step of forming the organic electroluminescence element side substrate, the transparent electrode is formed as a common continuous layer occupying a plurality of the light emitting portions. 20. The method according to claim 17, wherein the organic material layer is formed as a common continuous layer occupying a plurality of the light emitting portions in the organic electroluminescent element side substrate forming step. 21. In the organic electroluminescent element-side substrate forming step, an insulator protrusion is formed in a part of a region of each light emitting portion of the transparent substrate, and thereafter, the transparent electrode, the organic material layer, and the metal are formed. By laminating electrodes,
2. A projection is formed on a metal electrode.
7. The production method according to 7. 22. The method according to claim 21, wherein in the step of forming the field-effect transistor-side substrate, an insulating film having an opening through which only the protrusion of the metal electrode passes is formed on the connection metal electrode. Production method. 23. The method according to claim 18, wherein in the step of forming the field-effect transistor-side substrate, a protrusion is formed on the connection metal electrode. 24. The organic electroluminescence element-side substrate forming step, wherein an insulating film having an opening through which only the protrusion of the connection metal electrode passes is formed on the metal electrode. Manufacturing method.