JP2001028418A - Heat sink - Google Patents
Heat sinkInfo
- Publication number
- JP2001028418A JP2001028418A JP11200314A JP20031499A JP2001028418A JP 2001028418 A JP2001028418 A JP 2001028418A JP 11200314 A JP11200314 A JP 11200314A JP 20031499 A JP20031499 A JP 20031499A JP 2001028418 A JP2001028418 A JP 2001028418A
- Authority
- JP
- Japan
- Prior art keywords
- heat
- conductor
- heat sink
- heat conductor
- tongue
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims abstract description 36
- 230000008602 contraction Effects 0.000 abstract 1
- 230000020169 heat generation Effects 0.000 abstract 1
- 239000010936 titanium Substances 0.000 description 12
- 239000010408 film Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 8
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 238000001027 hydrothermal synthesis Methods 0.000 description 5
- 239000012670 alkaline solution Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000000191 radiation effect Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000006386 neutralization reaction Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- -1 first Substances 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、ＣＰＵやその他
のＬＳＩ等、発熱を伴う電子素子の冷却を行うヒートシ
ンク装置に関する。[0001] 1. Field of the Invention [0002] The present invention relates to a heat sink device for cooling electronic devices that generate heat, such as CPUs and other LSIs.
【０００２】[0002]
【従来の技術】従来、半導体素子のヒートシンクは、例
えば特開平７−１８３６７８号公報に開示されているよ
うに、半導体素子を放熱フィンの付いたヒートシンクに
取り付け、このヒートシンクに空気を送り込んで放熱を
助け、半導体素子の発熱を吸収していた。さらに、特開
平６−９７３３６号公報に開示されているように、放熱
フィンの放熱効果を高めるために、ヒートシンクを超音
波振動子により超音波振動させるものも提案されてい
る。2. Description of the Related Art Conventionally, as disclosed in Japanese Patent Application Laid-Open No. 7-183678, for example, a semiconductor device is mounted on a heat sink having radiating fins, and air is sent to the heat sink to dissipate heat. Helped and absorbed the heat generated by the semiconductor element. Further, as disclosed in Japanese Patent Application Laid-Open No. 6-97336, there has been proposed a device in which a heat sink is ultrasonically vibrated by an ultrasonic vibrator in order to enhance the heat radiation effect of the radiation fins.
【０００３】[0003]
【発明が解決しようとする課題】上記従来の技術の前者
の場合、放熱効果を大きくしようとすると、放熱フィン
の大きさや、ファンによる風量を多くしなければなら
ず、近年の電子機器の小型化に反するという問題があっ
た。また、従来の技術の後者の場合も、超音波振動によ
る空気の攪乱等による放熱効果の向上はわずかであり、
近年電子機器の高度化や多機能化に伴い、より小形、薄
形の電子機器が求められている。In the former case of the above prior art, in order to increase the heat radiation effect, the size of the heat radiation fins and the amount of air flow by the fan must be increased, and the size of the electronic equipment in recent years has been reduced. There was a problem that was contrary to. Also, in the latter case of the conventional technology, the improvement of the heat radiation effect due to the disturbance of the air by the ultrasonic vibration is slight,
In recent years, as electronic devices have become more sophisticated and multifunctional, smaller and thinner electronic devices have been required.
【０００４】この発明は、上記従来の問題点に鑑みてな
されたものであり、極めて効率よく放熱させることがで
き、小型化も容易なヒートシンク装置を提供することを
目的とする。[0004] The present invention has been made in view of the above-mentioned conventional problems, and has as its object to provide a heat sink device that can radiate heat very efficiently and that can be easily miniaturized.
【０００５】[0005]
【課題を解決するための手段】この発明のヒートシンク
装置は、発熱を伴う電子素子が取り付けられた熱伝導体
と、この熱伝導体の上記電子素子が取り付けられていな
い面に所定範囲で設けられ上記熱伝導体を湾曲させる圧
電振動体と、上記圧電振動体に伸縮動作をさせる駆動手
段とを設けたヒートシンク装置である。上記熱伝導体は
板状に形成されその所定範囲の両面に上記圧電振動体が
積層されている。また、上記熱伝導体は舌片状部を備
え、この舌片状部に上記圧電振動体が積層され、上記舌
片状部が上記圧電振動体の振動により揺動するものであ
る。SUMMARY OF THE INVENTION A heat sink device according to the present invention is provided with a heat conductor to which an electronic element which generates heat is attached, and a heat conductor having a predetermined area on a surface of the heat conductor to which the electronic element is not attached. A heat sink device provided with a piezoelectric vibrator for bending the heat conductor, and a drive unit for causing the piezoelectric vibrator to expand and contract. The heat conductor is formed in a plate shape, and the piezoelectric vibrators are laminated on both surfaces in a predetermined range. The heat conductor has a tongue-shaped portion, and the piezoelectric vibrator is laminated on the tongue-shaped portion, and the tongue-shaped portion swings due to the vibration of the piezoelectric vibrator.
【０００６】[0006]
【発明の実施の形態】以下、この発明の実施形態につい
て図面に基づいて説明する。図１はこの発明の第一実施
形態のヒートシンク装置を示すもので、発熱を伴う電子
素子であるＬＳＩ等の発熱素子１０が取り付けられた板
状の熱伝導体１２を有する。この熱伝導体１２は、セラ
ミック板等の絶縁体であり、金属板をセラミックス等の
絶縁体で被覆した部材でも良い。この熱伝導体１２の発
熱素子１０が設けられていない部分は、凸字型に形成さ
れた３枚の舌片状部１４として形成されている。この舌
片状部１４の両面の所定範囲には、チタン酸ジルコン酸
鉛（以下ＰＺＴと称す）、等の圧電体からなる圧電振動
体１６が一体に積層されている。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows a heat sink device according to a first embodiment of the present invention, which has a plate-like heat conductor 12 to which a heating element 10 such as an LSI which is an electronic element that generates heat is attached. The heat conductor 12 is an insulator such as a ceramic plate, or may be a member in which a metal plate is covered with an insulator such as ceramics. A portion of the heat conductor 12 where the heating element 10 is not provided is formed as three tongue-shaped portions 14 formed in a convex shape. A piezoelectric vibrator 16 made of a piezoelectric material such as lead zirconate titanate (hereinafter, referred to as PZT) is integrally laminated in a predetermined range on both surfaces of the tongue-shaped portion 14.
【０００７】この熱伝導体１２は、発熱素子１０に接続
した図示しない回路パターンが形成され、圧電振動体１
６を駆動する図示しない回路も形成されている。なお、
この圧電振動体１６を駆動する駆動手段である回路は、
この熱伝導体１０上に設けるか、別体に設けるかは任意
に設定可能である。The heat conductor 12 is formed with a circuit pattern (not shown) connected to the heating element 10 and the piezoelectric vibrator 1
6 is also formed. In addition,
A circuit as a driving means for driving the piezoelectric vibrating body 16 includes:
Whether it is provided on the heat conductor 10 or separately provided can be arbitrarily set.
【０００８】この実施形態のヒートシンク装置の製造方
法は、例えば、熱伝導体１２に表面に圧電振動体１６を
水熱合成法により形成することができる。水熱合成法
は、熱伝導体１２構成する大型の基板表裏面に、スパッ
タリングや溶射により所定の厚さチタン材料を付着させ
下部電極を兼ねるチタン膜を形成する。このとき、圧電
振動体１６を形成する部分以外の部分にチタンが付着し
ないように、マスクまたはレジストを塗布しておく。ま
た、ペースト状にした純チタン粉末や酸化チタン粉末、
チタン合金粉末を印刷し、基板に影響を与えない程度の
温度で焼成してチタン膜を形成してもよい。In the method of manufacturing the heat sink device of this embodiment, for example, the piezoelectric vibrator 16 can be formed on the surface of the heat conductor 12 by a hydrothermal synthesis method. In the hydrothermal synthesis method, a titanium material having a predetermined thickness is attached to the front and back surfaces of a large substrate constituting the heat conductor 12 by sputtering or thermal spraying to form a titanium film also serving as a lower electrode. At this time, a mask or a resist is applied so that titanium does not adhere to portions other than the portion where the piezoelectric vibrating body 16 is formed. In addition, pure titanium powder or titanium oxide powder in paste form,
A titanium film may be formed by printing titanium alloy powder and firing at a temperature that does not affect the substrate.
【０００９】この後、チタン膜上に、いわゆる水熱合成
法により、強誘電体の圧電材料のＰＺＴ種結晶膜を形成
する。水熱合成法では、先ず、種結晶膜を形成するた
め、最初にＰｂ（ＯＲ）２、Ｚｒ（ＯＲ）４、Ｔｉ（Ｏ
Ｒ）４を含む強アルカリ溶液に、チタン膜を形成した大
型の基板を浸し、２００℃以下、２〜３気圧程度に設定
されたオートクレーブに、溶液とともに入れる。これに
よりチタン膜のチタンと密着性の強いＰＺＴ種結晶膜を
形成する。Then, a PZT seed crystal film of a ferroelectric piezoelectric material is formed on the titanium film by a so-called hydrothermal synthesis method. In the hydrothermal synthesis method, first, in order to form a seed crystal film, first, Pb (OR) 2 , Zr (OR) 4 , Ti (O
R) A large-sized substrate on which a titanium film is formed is immersed in a strong alkaline solution containing 4 and put into an autoclave set at 200 ° C. or lower and about 2 to 3 atm together with the solution. As a result, a PZT seed crystal film having strong adhesion to titanium of the titanium film is formed.
【００１０】ここで強アルカリ溶液のＲは、Ｐｂ（Ｏ２
Ｃ１１Ｈ１９）２＝（Ｐｂ（ＤＰＭ）２）、Ｐｂ（Ｃ２
Ｈ５）４、（Ｃ２Ｈ５）３ＰｂＯＣＨ２Ｃ（Ｃ
Ｈ３）３、Ｚｒ（ＤＰＭ）２、Ｚｒ（ｔ−ＯＣ４Ｈ９）
４、Ｔｉ（ｉ−ＯＣ３Ｈ７）４、Ｔｉ（ＤＰＭ）２、Ｓ
ｒ（ＯＣ２Ｈ４０ＣＨ３）２等の有機金属の有機部組成
を示し、適宜選択して用いる。Here, R of the strong alkaline solution is Pb (O 2
C 11 H 19 ) 2 = (Pb (DPM) 2 ), Pb (C 2
H 5) 4, (C 2 H 5) 3 PbOCH 2 C (C
H 3 ) 3 , Zr (DPM) 2 , Zr (t-OC 4 H 9 )
4, Ti (i-OC 3 H 7) 4, Ti (DPM) 2, S
The organic part composition of an organic metal such as r (OC 2 H 40 CH 3 ) 2 is shown and appropriately selected and used.
【００１１】次にＰＺＴ結晶膜が所定の厚みを有するよ
うに、Ｐｂ（ＯＲ）２、Ｚｒ（ＯＲ）４、Ｔｉ（ＯＲ）
等を含む強アルカリ溶液に基板を浸し、２００℃以下、
２〜３気圧程度に設定されたオートクレーブに入れ、水
熱合成反応を起こし、ＰＺＴ結晶の強誘電体膜である圧
電振動体１６を形成する。Next, Pb (OR) 2 , Zr (OR) 4 , Ti (OR) so that the PZT crystal film has a predetermined thickness.
Immerse the substrate in a strong alkaline solution containing
It is placed in an autoclave set to about 2 to 3 atm, and a hydrothermal synthesis reaction is caused to form a piezoelectric vibrator 16 which is a ferroelectric film of PZT crystal.
【００１２】そして、アルカリ溶液から基板を取り出
し、中和処理を施した後、基板の表面に付着した中和処
理液等を洗浄除去し、乾燥させる。Then, the substrate is taken out of the alkaline solution and subjected to a neutralization treatment. Then, the neutralization treatment liquid and the like adhering to the surface of the substrate are removed by washing and dried.
【００１３】次に、ＰＺＴ結晶の強誘電体膜の圧電振動
体１６に積層する上部電極を形成する。上部電極は、銀
・パラジウム、ニッケル、銅、アルミニウム等の導電性
ペーストを、印刷により設ける。そして、これらの表面
に、樹脂のオーバーコートを印刷し焼き付ける。この
後、大型の基板を個々の熱伝導体１２毎に分割する。Next, an upper electrode to be laminated on the piezoelectric vibrator 16 of a ferroelectric film of PZT crystal is formed. The upper electrode is provided with a conductive paste of silver, palladium, nickel, copper, aluminum or the like by printing. Then, a resin overcoat is printed and baked on these surfaces. Thereafter, the large substrate is divided into individual heat conductors 12.
【００１４】この実施形態のヒートシンクの駆動は、熱
伝導体１２の舌片状部１４に設けられた圧電振動体１６
に対して、舌片状部１４の表裏で逆の電圧を与える。す
なわち、舌片状部１４の表側で圧電振動体が伸びる場合
は、同時に裏側では圧電振動体１６が収縮するように駆
動する。これにより、舌片状部１４は片持ち状態で撓み
振動する。さらに、３枚の舌片状部１４は、すべて同位
相で駆動されて良いが、例えば９０〜１８０度の適宜の
範囲で振動の位相をずらした駆動を行っても良い。これ
により、空気の流れが舌片状部１４の並び方向に向けら
れ、効率よく放熱が可能となる。またこの舌片状部１４
に流れる冷却媒体は、空気やその他の気体の他、ＬＳＩ
等発熱素子１０の取り付け部の隔離が可能である場合、
液体の冷媒を流しても良い。The heat sink of this embodiment is driven by a piezoelectric vibrating member 16 provided on the tongue-shaped portion 14 of the heat conductor 12.
, Opposite voltages are applied to the front and back of the tongue-shaped portion 14. That is, when the piezoelectric vibrator extends on the front side of the tongue-like portion 14, the piezoelectric vibrator 16 is simultaneously driven to contract on the rear side. As a result, the tongue-shaped portion 14 flexes and vibrates in a cantilever state. Further, all three tongue-shaped portions 14 may be driven in the same phase, but may be driven with the phase of vibration shifted in an appropriate range of, for example, 90 to 180 degrees. Thereby, the flow of air is directed in the direction in which the tongue-shaped portions 14 are arranged, and heat can be efficiently dissipated. This tongue-shaped part 14
The cooling medium that flows through the
When it is possible to isolate the mounting portion of the isothermal element 10,
A liquid refrigerant may flow.
【００１５】この実施形態のヒートシンク装置によれ
ば、放熱部である舌片状部１４が冷媒中で圧電振動体１
６により撓み振動するので、放熱効果が高く、小型で高
効率の冷却が可能なヒートシンクを形成することができ
る。According to the heat sink device of this embodiment, the tongue-shaped portion 14 as a heat radiating portion is moved in the refrigerant by the piezoelectric vibrating member 1.
Since the bending vibration occurs due to 6, the heat sink having a high heat radiation effect, and capable of cooling with small size and high efficiency can be formed.
【００１６】次ぎにこの発明の第二実施形態について、
図２を基にして説明する。ここで上記実施形態と同様の
部材は同一符号を付して説明を省略する。この実施形態
のヒートシンク装置は、ＬＳＩ等の発熱素子１０が設け
られた基板である熱伝導体１２が、放熱フィン２１が周
囲に形成された金属製の放熱収納部２０内に固定されて
いる。熱伝導体１２の発熱素子１０が設けられていない
両端部には、上記実施形態と同様に圧電振動体１６が積
層され、互いに逆極性で圧電効果を有するように設定さ
れている。熱伝導体１２は、放熱収納部２０に対して、
熱伝導部材２２を介して接続されているとともに保持固
定されている。また、熱伝導部材２２内には、スルーホ
ール２４が形成され熱伝導体１２間の電気的接続も図ら
れている。Next, a second embodiment of the present invention will be described.
This will be described with reference to FIG. Here, the same members as those in the above embodiment are denoted by the same reference numerals, and description thereof will be omitted. In the heat sink device of this embodiment, a heat conductor 12 which is a substrate on which a heating element 10 such as an LSI is provided is fixed in a metal heat dissipation housing 20 around which heat dissipation fins 21 are formed. Piezoelectric vibrators 16 are laminated on both ends of the heat conductor 12 where the heating element 10 is not provided, as in the above-described embodiment, and are set to have a piezoelectric effect with opposite polarities. The heat conductors 12 are
It is connected and held and fixed via the heat conducting member 22. Further, a through hole 24 is formed in the heat conductive member 22 so that electrical connection between the heat conductors 12 is achieved.
【００１７】この実施形態のヒートシンク装置は図示し
ない回路基板に取り付けられるもので、熱伝導体１２が
揺動することにより、空気の流通がなされ効果的な冷却
が可能となる。The heat sink device of this embodiment is mounted on a circuit board (not shown), and the heat conductor 12 oscillates to allow air to flow, thereby enabling effective cooling.
【００１８】次ぎにこの発明の第三実施形態について、
図３を基にして説明する。ここで上記実施形態と同様の
部材は同一符号を付して説明を省略する。この実施形態
のヒートシンク装置は、ＬＳＩ等の発熱素子１０が設け
られた基板である熱伝導体１２が、熱伝導部材２６を介
して回路基板２８に取り付けられているものである。こ
の熱伝導体１２の発熱素子１０が設けられていない両端
部には、上記実施形態と同様に圧電振動体１６が積層さ
れ、互いに逆極性で圧電効果を有するように設定されて
いる。また、熱伝導部材２６内には、図示しないスルー
ホールが形成され熱伝導体１２と回路基板２８との電気
的接続が図られている。Next, a third embodiment of the present invention will be described.
This will be described with reference to FIG. Here, the same members as those in the above embodiment are denoted by the same reference numerals, and description thereof will be omitted. In the heat sink device of this embodiment, a heat conductor 12 which is a substrate provided with a heating element 10 such as an LSI is attached to a circuit board 28 via a heat conductive member 26. At both ends of the heat conductor 12 where the heating element 10 is not provided, the piezoelectric vibrators 16 are laminated in the same manner as in the above-described embodiment, and are set to have opposite polarities and have a piezoelectric effect. Further, a through hole (not shown) is formed in the heat conductive member 26 so that the heat conductor 12 and the circuit board 28 are electrically connected.
【００１９】この実施形態の圧電振動体１６は、熱伝導
体１２の両側で、互いに対向して４組設けられ、隣り合
う圧電振動体１６の極性が逆に設定され、圧電振動体１
２が波状に振動する。The piezoelectric vibrators 16 of this embodiment are provided in four sets opposing each other on both sides of the heat conductor 12, and the polarities of the adjacent piezoelectric vibrators 16 are set to be opposite.
2 vibrates in a wavy manner.
【００２０】この実施形態のヒートシンク装置は、回路
基板２８に取り付けられ、回路基板２８の上方で熱伝導
体１２が振動して、発熱素子１０の発熱を放散する。The heat sink device of this embodiment is mounted on a circuit board 28, and the heat conductor 12 vibrates above the circuit board 28 to dissipate the heat generated by the heating element 10.
【００２１】なお、この発明の圧電振動体は、これらの
強誘電体の圧電振動体セラミック粉体をバインダ中に設
けてスクリーン印刷し焼き付ける方法や、これら圧電振
動体の中間体酸化物のゾルをゲル化させて薄膜を形成す
るゾル−ゲル法で形成しても良い。さらに、これらの圧
電振動体の薄膜を形成する方法として、これらの圧電振
動体を真空中で基板上に積層するスパッタリングや真空
蒸着等もあった。また、圧電振動体の材料は、上記実施
形態のほか、チタン酸ストロンチウム（ＳＴＯ）、チタ
ン酸バリウム（ＢＴＯ）でも良い。The piezoelectric vibrator of the present invention can be obtained by a method of screen-printing and baking these ferroelectric piezoelectric vibrator ceramic powders in a binder, or by using a sol of an intermediate oxide of these piezoelectric vibrators. It may be formed by a sol-gel method of forming a thin film by gelation. Further, as a method of forming a thin film of these piezoelectric vibrators, there has been a method of laminating these piezoelectric vibrators on a substrate in a vacuum, such as sputtering or vacuum deposition. The material of the piezoelectric vibrator may be strontium titanate (STO) or barium titanate (BTO) in addition to the above embodiment.
【００２２】[0022]
【発明の効果】この発明のヒートシンク装置は、発熱素
子の冷却を効果的に行うことができ、小型化が可能であ
りコストも安価なものである。According to the heat sink device of the present invention, the heat generating element can be effectively cooled, the size can be reduced, and the cost can be reduced.
【図１】この発明の第一実施形態のヒートシンク装置の
斜視図である。FIG. 1 is a perspective view of a heat sink device according to a first embodiment of the present invention.
【図２】この発明の第二実施形態のヒートシンク装置の
平面図である。FIG. 2 is a plan view of a heat sink device according to a second embodiment of the present invention.
【図３】この発明の第三実施形態のヒートシンク装置の
正面図である。FIG. 3 is a front view of a heat sink device according to a third embodiment of the present invention.
１０ 発熱素子 １２ 熱伝導体 １４ 舌片状部 １６ 圧電振動体 DESCRIPTION OF SYMBOLS 10 Heating element 12 Heat conductor 14 Tongue piece 16 Piezoelectric vibrator
Claims (3)
伝導体と、この熱伝導体の上記電子素子が取り付けられ
ていない面に所定範囲で設けられ上記熱伝導体を湾曲さ
せる圧電振動体と、上記圧電振動体に伸縮動作をさせる
駆動手段とを設けたヒートシンク装置。1. A heat conductor to which an electronic element which generates heat is mounted, and a piezoelectric vibrator which is provided in a predetermined range on a surface of the heat conductor on which the electronic element is not mounted and which curves the heat conductor. And a drive unit for causing the piezoelectric vibrator to expand and contract.
範囲の両面に上記圧電振動体が積層されている請求項１
記載のヒートシンク装置。2. The heat conductor is formed in a plate shape, and the piezoelectric vibrators are laminated on both surfaces in a predetermined range.
A heat sink device as described.
片状部に上記圧電振動体が積層され、上記舌片状部が上
記圧電振動体の振動により揺動する請求項１又は２記載
のヒートシンク装置。3. The heat conductor includes a tongue-shaped portion, and the piezoelectric vibrator is laminated on the tongue-shaped portion, and the tongue-shaped portion swings due to vibration of the piezoelectric vibrator. Or the heat sink device according to 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11200314A JP2001028418A (en) | 1999-07-14 | 1999-07-14 | Heat sink |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11200314A JP2001028418A (en) | 1999-07-14 | 1999-07-14 | Heat sink |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001028418A true JP2001028418A (en) | 2001-01-30 |
Family
ID=16422258
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11200314A Pending JP2001028418A (en) | 1999-07-14 | 1999-07-14 | Heat sink |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001028418A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7876281B2 (en) | 2007-09-28 | 2011-01-25 | Sony Corporation | Magnetic material, magnetic sheet, and portable electronic apparatus |
| WO2011105800A3 (en) * | 2010-02-23 | 2012-01-12 | 한국과학기술원 | Heat sink including a heat-dissipation fin capable of vibrating |
| JP2014016145A (en) * | 2012-07-05 | 2014-01-30 | Yang Tai He | Thermal transferring device |
| US10866038B2 (en) * | 2018-10-25 | 2020-12-15 | United Arab Emirates University | Heat sinks with vibration enhanced heat transfer for non-liquid heat sources |
| CN116158201A (en) * | 2020-08-24 | 2023-05-23 | 辉达公司 | Smart Adaptive Heat Sinks for Cooling Data Center Equipment |
-
1999
- 1999-07-14 JP JP11200314A patent/JP2001028418A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7876281B2 (en) | 2007-09-28 | 2011-01-25 | Sony Corporation | Magnetic material, magnetic sheet, and portable electronic apparatus |
| WO2011105800A3 (en) * | 2010-02-23 | 2012-01-12 | 한국과학기술원 | Heat sink including a heat-dissipation fin capable of vibrating |
| JP2014016145A (en) * | 2012-07-05 | 2014-01-30 | Yang Tai He | Thermal transferring device |
| US10866038B2 (en) * | 2018-10-25 | 2020-12-15 | United Arab Emirates University | Heat sinks with vibration enhanced heat transfer for non-liquid heat sources |
| US10890387B2 (en) * | 2018-10-25 | 2021-01-12 | United Arab Emirates University | Heat sinks with vibration enhanced heat transfer |
| CN116158201A (en) * | 2020-08-24 | 2023-05-23 | 辉达公司 | Smart Adaptive Heat Sinks for Cooling Data Center Equipment |
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