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JP2001024228A - Light emitting device - Google Patents

Light emitting device

Info

Publication number
JP2001024228A
JP2001024228A JP19193499A JP19193499A JP2001024228A JP 2001024228 A JP2001024228 A JP 2001024228A JP 19193499 A JP19193499 A JP 19193499A JP 19193499 A JP19193499 A JP 19193499A JP 2001024228 A JP2001024228 A JP 2001024228A
Authority
JP
Japan
Prior art keywords
light
light emitting
positive
chip
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19193499A
Other languages
Japanese (ja)
Other versions
JP3632507B2 (en
Inventor
Hiroaki Tamemoto
広昭 為本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP19193499A priority Critical patent/JP3632507B2/en
Publication of JP2001024228A publication Critical patent/JP2001024228A/en
Application granted granted Critical
Publication of JP3632507B2 publication Critical patent/JP3632507B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H10W72/07251
    • H10W72/20
    • H10W72/5522
    • H10W90/756

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

(57)【要約】 【課題】 厳しい環境条件のもとでも十分高い信頼性を
有しかつ光学特性に優れた発光装置を提供する。 【解決手段】 正及び負のリード電極と成形樹脂とが一
体成形されてなる成形体と、正及び負のリード電極にそ
れぞれ接続された正及び負の電極を有する発光素子チッ
プとを備え、該発光素子チップが成形体上に透光性樹脂
で封止されてなる発光素子であって、正及び負のリード
電極がそれぞれ発光素子チップの正負の電極と接続され
る部分を除いて実質的に成形樹脂によって覆われるよう
にした。
(57) [Problem] To provide a light emitting device having sufficiently high reliability even under severe environmental conditions and excellent in optical characteristics. SOLUTION: The light emitting device includes a molded body formed by integrally molding a positive and negative lead electrode and a molding resin, and a light emitting element chip having positive and negative electrodes connected to the positive and negative lead electrodes, respectively. A light-emitting element in which a light-emitting element chip is sealed on a molded body with a light-transmitting resin, and the positive and negative lead electrodes are substantially except for portions connected to the positive and negative electrodes of the light-emitting element chip. It was made to be covered with molding resin.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は各種インジケータ
ー、ディスプレイ、光プリンターの書き込み光源及び液
晶のバックライト用光源などに利用可能なLEDチップ
を用いた発光装置に関し、特に発光装置の信頼性の向上
を図った発光装置の構成に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light-emitting device using an LED chip which can be used for various indicators, displays, writing light sources for optical printers, and light sources for liquid crystal backlights. It relates to the structure of the light-emitting device as intended.

【0002】[0002]

【従来の技術】今日、LEDチップを用いた発光装置
が、種々の光源として広く利用されている。LEDチッ
プは半導体発光素子であり玉切れがなく、ON/OFF駆動特
性に優れているという特徴を有していることから、今後
さらに広く用いられるものと考えられる。LEDチップ
は約300μm角程度と極めて小さいものであり、通
常、リード電極に接続された後、樹脂モールドされて用
いられるが、最近では、表面実装が可能なチップタイプ
の発光素子が多く使用されるようになってきている。
2. Description of the Related Art Today, light emitting devices using LED chips are widely used as various light sources. The LED chip is a semiconductor light-emitting element, and has characteristics of not being broken and having excellent ON / OFF drive characteristics, and thus is considered to be more widely used in the future. The LED chip is extremely small, about 300 μm square, and is usually used after being connected to a lead electrode and then molded with a resin. Recently, a chip type light emitting element that can be surface-mounted is often used. It is becoming.

【0003】チップタイプの発光装置では、LEDチッ
プを収納する凹部を有する液晶ポリマからなるパッケー
ジが用いられ、そのパッケージにはリード電極が埋め込
まれている。また、そのリード電極は、LEDチップと
接続するために、凹部の底面で露出されている。このよ
うに作製されたパッケージの凹部に、LEDチップをダ
イボンド樹脂等で固定して、露出されたリード電極とL
EDチップの電極とを例えば金属ワイヤによって接続し
た後、LEDチップを保護するために透光性エポキシ樹
脂で被覆することにより、発光装置が作製される。この
ようにして、光学特性に優れた発光装置とすることがで
きる。こうして作製されたチップタイプ発光素子は、他
のチップタイプ部品と同様の方法で表面実装され、リー
ド電極を介してLEDチップに電流が供給されてLED
チップが発光し、発光された光はLEDチップから直接
又は凹部の側面で反射してパッケージの外部へ放出され
る。
In a chip type light emitting device, a package made of a liquid crystal polymer having a concave portion for accommodating an LED chip is used, and a lead electrode is embedded in the package. Further, the lead electrode is exposed at the bottom surface of the concave portion for connecting to the LED chip. The LED chip is fixed to the concave portion of the package manufactured as described above with a die bond resin or the like, and the exposed lead electrode and L
After connecting the electrodes of the ED chip with, for example, metal wires, the light emitting device is manufactured by covering the LED chip with a translucent epoxy resin to protect the LED chip. Thus, a light-emitting device having excellent optical characteristics can be obtained. The chip-type light-emitting device thus manufactured is surface-mounted in the same manner as other chip-type components, and current is supplied to the LED chip via a lead electrode, thereby causing the LED to emit light.
The chip emits light, and the emitted light is emitted directly from the LED chip or reflected on the side surface of the concave portion to the outside of the package.

【0004】近年、LEDチップはいろいろな用途に使
われるようになり、半田付けの方法も多様化しており、
チップタイプの発光装置のハッケージにおいても、電気
的接続や取り扱いを容易にするためにさまざまな工夫が
なされている。
[0004] In recent years, LED chips have been used for various purposes, and soldering methods have been diversified.
Even in a package of a chip type light emitting device, various devices have been devised to facilitate electrical connection and handling.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、発光装
置の利用分野の広がりと共に厳しい使用条件のもとで使
用されるようになってきている現在では、さらに信頼性
が高く光学特性の優れた発光装置が求められている。
However, as the light emitting device has been used under severe operating conditions as the field of use of the light emitting device has expanded, the light emitting device has higher reliability and excellent optical characteristics. Is required.

【0006】そこで、本発明は厳しい環境条件のもとで
も十分高い信頼性を有しかつ光学特性に優れた発光装置
を提供することを目的とする。
Accordingly, an object of the present invention is to provide a light emitting device which has sufficiently high reliability under severe environmental conditions and has excellent optical characteristics.

【0007】[0007]

【課題を解決するための手段】すなわち、本発明に係る
発光装置は、正及び負のリード電極と成形樹脂とが一体
成形されてなる成形体と、上記正及び負のリード電極に
それぞれ接続された正及び負の電極を有する発光素子チ
ップとを備え、該発光素子チップが上記成形体上に透光
性樹脂で封止されてなる発光素子であって、上記正及び
負のリード電極がそれぞれ上記発光素子チップの正負の
電極と接続される部分を除いて実質的に上記成形樹脂に
よって覆われていることを特徴とする。このように構成
することにより、本発明に係る発光装置は、上記正負の
リード電極と上記透光性樹脂の界面の面積を極めて小さ
くでき、該界面における気化膨張を防止できる。また、
成形体においてリード電極の露出部の面積を小さくする
ことにより、透光性樹脂で発光チップを覆ったときに、
比較的密着力の強い成形樹脂と透光性樹脂との界面の面
積を相対的に大きくできるので、上記成形体と上記透光
性樹脂との密着性を強くできる。すなわち、本発明に係
る発光装置では、上記正負のリード電極と上記透光性樹
脂の界面における気化膨張を防止でき、かつ上記成形体
と上記透光性樹脂との密着性を強くできるので、上記成
形体と上記透光性樹脂との界面の剥離を効果的に防止で
き、極めて信頼性を高くできる。
That is, a light emitting device according to the present invention comprises a molded body in which positive and negative lead electrodes and a molding resin are integrally molded, and a molded body which is connected to the positive and negative lead electrodes, respectively. A light-emitting element chip having positive and negative electrodes, wherein the light-emitting element chip is sealed on the molded body with a transparent resin, wherein the positive and negative lead electrodes are respectively The light-emitting element chip is substantially covered with the molding resin except for portions connected to the positive and negative electrodes. With this configuration, in the light emitting device according to the present invention, the area of the interface between the positive and negative lead electrodes and the translucent resin can be made extremely small, and vaporization and expansion at the interface can be prevented. Also,
By reducing the area of the exposed part of the lead electrode in the molded body, when the light emitting chip is covered with a translucent resin,
Since the area of the interface between the molding resin and the translucent resin having relatively strong adhesion can be relatively increased, the adhesion between the molded body and the translucent resin can be increased. That is, in the light emitting device according to the present invention, it is possible to prevent vaporization and expansion at the interface between the positive and negative lead electrodes and the translucent resin, and to increase the adhesion between the molded body and the translucent resin. Separation of the interface between the molded article and the translucent resin can be effectively prevented, and the reliability can be extremely increased.

【0008】また、本発明に係る発光装置においては、
上記成形体が発光チップを収納する凹部を有し、該凹部
に上記発光素子チップを設け上記透光性樹脂で封止する
ようにしても良い。さらに、上記凹部が形成された成形
体を用いた発光装置では、上記凹部の表面の少なくとも
一部は上記発光素子チップの発生する光を反射するよう
に処理されていることが好ましく、これによって、上記
発光チップで発光した光を効果的に上方に出力すること
ができる。
Further, in the light emitting device according to the present invention,
The molded body may have a concave portion for accommodating a light emitting chip, and the light emitting element chip may be provided in the concave portion and sealed with the translucent resin. Furthermore, in the light emitting device using the molded body in which the concave portion is formed, it is preferable that at least a part of the surface of the concave portion is treated so as to reflect light generated by the light emitting element chip. The light emitted from the light emitting chip can be effectively output upward.

【0009】また、本発明に係る発光装置において、上
記発光素子チップは発光面と反対側の面に上記正負の電
極が共に形成されてなり、かつ上記成形体は上記正負の
リード電極がそれぞれ上記発光素子チップの上記正負の
電極と対向するように露出されてなり、上記正負のリー
ド電極が該露出された部分で上記正負の電極と導通する
ように接合されるようにしてもよい。すなわち、本発光
装置において、発光素子チップは、その電極を下にして
いわゆるフリップチップで実装されているものである
が、このようにすると、上記正負のリード電極と上記透
光性樹脂との界面の面積をより小さくできるので、さら
に信頼性を高くでき、また、ワイヤボンディングで接続
する方法に比較して発光装置の薄型化が可能となる。
Further, in the light emitting device according to the present invention, the light emitting element chip has both the positive and negative electrodes formed on the surface opposite to the light emitting surface, and the molded body has the positive and negative lead electrodes respectively. The light emitting element chip may be exposed so as to face the positive and negative electrodes, and the positive and negative lead electrodes may be joined so as to conduct with the positive and negative electrodes at the exposed portions. That is, in the present light emitting device, the light emitting element chip is mounted with a so-called flip chip with its electrode facing down. In this case, the interface between the positive and negative lead electrodes and the translucent resin is formed. Since the area of the light emitting device can be further reduced, the reliability can be further increased, and the thickness of the light emitting device can be reduced as compared with the method of connecting by wire bonding.

【0010】[0010]

【発明の実施の形態】以下、図面を参照して本発明に係
る実施の形態の発光装置(チップタイプLED素子)に
ついて説明する。本実施の形態の発光装置は、図1及び
図2(b)に示すように、凹部2を備えその凹部底面2
bに正のリード電極3及び負のリード電極4の一部を露
出させてなる成形体パッケージ1を用い、その凹部2に
LEDチップ5が収納されて構成される。ここで、特に
本実施の形態の発光装置においては、正負のリード電極
3,4がそれぞれ上記発光素子チップの正負の電極と接
続される部分を除いて実質的に成形樹脂1aによって覆
われていることを特徴とし、これによって、本実施の形
態の発光装置は、厳しい使用環境においても高い信頼性
を確保することができるという優れた効果を有する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A light emitting device (chip type LED element) according to an embodiment of the present invention will be described below with reference to the drawings. As shown in FIGS. 1 and 2B, the light emitting device of the present embodiment has a concave portion 2 and a concave bottom surface 2 thereof.
The molded body package 1 is formed by exposing a part of the positive lead electrode 3 and a part of the negative lead electrode 4 to the LED b. Here, particularly in the light emitting device of the present embodiment, the positive and negative lead electrodes 3 and 4 are substantially covered with the molding resin 1a except for the portions connected to the positive and negative electrodes of the light emitting element chip. Thus, the light emitting device of the present embodiment has an excellent effect that high reliability can be ensured even in a severe use environment.

【0011】すなわち、本発明は、従来例の発光装置
(図7に示す)において、成形体パッケージ201のリ
ード電極203,204を構成する金属と、LEDチッ
プ5を封止する透光性樹脂206との間の密着性が悪い
ことに起因して、以下のような信頼性の劣化、又は発光
特性の劣化が起こることを見出し、その問題点を解決す
るために完成させたものである。 従来例における信頼性が劣化する原因の分析 (1)製造時等にリード金属203,204の金属と透
光性樹脂206との界面に水分が吸湿されやすく、その
結果、吸湿された水分が半田付け時など高温にさらされ
ると気化膨張を起こし、透光性樹脂と金属の間で剥離し
て、空間210が形成される原因となる。 (2)透光性樹脂と金属の間での剥離によって、光学特
性が変化したり、或いはLEDチップが発光しなくな
る。
That is, according to the present invention, in the conventional light emitting device (shown in FIG. 7), the metal forming the lead electrodes 203 and 204 of the molded package 201 and the translucent resin 206 sealing the LED chip 5 are provided. The inventors have found that the following deterioration in reliability or deterioration in light emission characteristics occurs due to poor adhesion between the substrate and the substrate, and the present invention has been completed to solve the problems. Analysis of Causes of Deterioration of Reliability in Conventional Example (1) Moisture is easily absorbed at the interface between the metal of lead metals 203 and 204 and translucent resin 206 at the time of manufacture or the like. Exposure to a high temperature such as during attachment causes vaporization and expansion, and separation between the light-transmitting resin and the metal causes the formation of the space 210. (2) Optical properties change or the LED chip does not emit light due to separation between the light-transmitting resin and the metal.

【0012】これに対して、本実施の形態の発光装置で
は、正負のリード電極3,4がそれぞれ上記発光素子チ
ップの正負の電極と接続される先端部分を除いて実質的
に成形樹脂1aによって覆われるように成形体パッケー
ジ1を構成している。従って、本発光装置では、透光性
樹脂6によって封止した後において、リード電極3,4
と透光性樹脂6との界面はほとんど存在せず、その界面
に問題となる水分を含むことがない。従って、リード電
極3,4と透光性樹脂6との界面における水分の気化膨
張により信頼性及び発光特性を劣化させることがないと
いうものである。
On the other hand, in the light emitting device of the present embodiment, the positive and negative lead electrodes 3 and 4 are substantially formed by the molding resin 1a except for the end portions connected to the positive and negative electrodes of the light emitting element chip. The molded package 1 is configured to be covered. Therefore, in this light emitting device, after sealing with the translucent resin 6, the lead electrodes 3, 4
There is almost no interface between the resin and the light-transmitting resin 6, and the interface does not contain water that causes a problem. Therefore, the reliability and the light emission characteristics are not deteriorated by the vaporization and expansion of the moisture at the interface between the lead electrodes 3 and 4 and the translucent resin 6.

【0013】以下、本実施の形態の発光装置の各構成に
ついて詳述する。 (成形体パッケージ1)成形体パッケージ1は、図3に
示す金型507内にリード電極3,4を所定の位置に挿
入した後、符号506を付して示す矢印の方向から溶融
した成形樹脂を射出することにより作製される。尚、金
型内に射出された溶融成形樹脂は、冷却後金型から取り
出され、リード電極3,4がそれぞれ所定の形状に加工
される。
Hereinafter, each configuration of the light emitting device of the present embodiment will be described in detail. (Molded Body Package 1) The molded body package 1 is obtained by inserting the lead electrodes 3 and 4 into predetermined positions in the mold 507 shown in FIG. By injecting. The molten resin injected into the mold is taken out of the mold after cooling, and the lead electrodes 3 and 4 are each processed into a predetermined shape.

【0014】ここで、成形樹脂1aは、液晶ポリマーや
ポリブチレンテレフタレート(PBT)樹脂、ポリアミ
ド樹脂,ABS樹脂、メラミン樹脂等の絶縁性支持部材
を用いることができる。また、本実施の形態において、
成形体パッケージ1は、LEDチップ5からの光を効率
よく取り出すために傾斜した側壁2aを持つように形成
した。また、本発明ではさらに、成形樹脂1aにチタン
酸バリウムや酸化チタン、酸化亜鉛、硫酸バリウムなど
の白色顔料などを混合することにより成形樹脂表面、特
に、側壁2aの表面における光の反射率を向上させるこ
とが好ましい。
Here, as the molding resin 1a, an insulating support member such as a liquid crystal polymer, a polybutylene terephthalate (PBT) resin, a polyamide resin, an ABS resin, and a melamine resin can be used. In the present embodiment,
The molded package 1 was formed so as to have inclined side walls 2a in order to efficiently extract light from the LED chip 5. Further, in the present invention, the reflectance of light on the surface of the molding resin, in particular, the surface of the side wall 2a is improved by mixing the molding resin 1a with a white pigment such as barium titanate, titanium oxide, zinc oxide or barium sulfate. Preferably.

【0015】このように、成形体パッケージ1をモール
ド成形等により金型内で成形する場合、金型内部に配置
されるリード電極3,4のうち、成形体パッケージ1の
凹部の底面において露出させる部分を金型に密着させ、
密着させた部分を除いてリード電極3,4を覆うように
樹脂を注入することにより、本実施の形態の成形体パッ
ケージ1を比較的簡単に形成することができる。
As described above, when the molded package 1 is molded in a mold by molding or the like, the lead electrodes 3 and 4 arranged inside the mold are exposed at the bottom surface of the concave portion of the molded package 1. Close the part to the mold,
By injecting the resin so as to cover the lead electrodes 3 and 4 except for the parts that have been brought into close contact with each other, the molded package 1 of the present embodiment can be formed relatively easily.

【0016】本実施の形態の成形体パッケージ1を成形
するための金型507は、成形体パッケージ1の凹部2
に対応する凸部502を有し、さらにその凸部502に
さらにリード電極3,4の一部に接触させるための第2
凸部503を有している。このように形成された金型5
07にリード電極3,4を所定の位置に配置した後、金
型内に液晶ポリマーを注入して硬化することにより成形
体パッケージ1は形成される。従って、モールド成形さ
れた成形体パッケージ1は、金型の第2凸部503に対
応して凹部底面2bに形成された第2凹部2cの底面の
みにリード電極3,4の一部が露出される。すなわち、
凹部2において第2凹部2c以外の部分に位置する電極
リード3,4は、すべて成形樹脂によって覆われてい
る。尚、本実施の形態の発光装置のパッケージは、LE
Dチップ5をフリップチップ実装するために、LEDチ
ップ5の正負の電極に対向する位置にそれぞれ、正のリ
ード電極3、負のリード電極4の接続部分が露出される
ように成形している。
The mold 507 for molding the molded package 1 of the present embodiment includes
And a second portion for making the convex portion 502 further contact a part of the lead electrodes 3 and 4.
It has a convex part 503. The mold 5 thus formed
After arranging the lead electrodes 3 and 4 at predetermined positions at 07, a molded body package 1 is formed by injecting a liquid crystal polymer into a mold and curing it. Therefore, in the molded package 1 formed by molding, a part of the lead electrodes 3 and 4 is exposed only on the bottom surface of the second concave portion 2c formed on the concave bottom surface 2b corresponding to the second convex portion 503 of the mold. You. That is,
The electrode leads 3 and 4 located in the concave portion 2 other than the second concave portion 2c are all covered with the molding resin. Note that the package of the light emitting device of this embodiment is LE
In order to mount the D chip 5 in a flip-chip manner, the LED chip 5 is formed so that the connection portions of the positive lead electrode 3 and the negative lead electrode 4 are exposed at positions facing the positive and negative electrodes, respectively.

【0017】(リード電極3,4)リード電極3,4は
リン青銅等の電気良導体を用いて構成することができ
る。また、LEDチップ5からの光の反射率を向上させ
るために、リード電極3,4の表面に銀、アルミニウ
ム、銅や金等の金属メッキを施すこともでき、またリー
ド電極3,4の表面を反射率を向上させるために平滑に
することが好ましい。また、リード電極3,4の面積は
大きくすることが好ましく、このようにすると放熱性を
高くできるので、LEDチップの温度上昇を効果的に抑
えることができる。これによって、LEDチップに比較
的多くの電流を流すことができるようにでき、光出力を
大きくできる。
(Lead Electrodes 3, 4) The lead electrodes 3, 4 can be formed using an electric conductor such as phosphor bronze. Further, in order to improve the reflectance of light from the LED chip 5, the surfaces of the lead electrodes 3 and 4 can be plated with a metal such as silver, aluminum, copper or gold. Is preferably smoothed to improve the reflectance. In addition, it is preferable that the area of the lead electrodes 3 and 4 is large. In this case, the heat dissipation can be increased, so that the temperature rise of the LED chip can be effectively suppressed. As a result, a relatively large amount of current can flow through the LED chip, and the light output can be increased.

【0018】(透光性封止樹脂6)透光性封止樹脂6
は、外力、塵芥などからLEDチップ5を保護するため
にパッケージの凹部内に充填され、LEDチップ5から
の光を効率よく外部に透過させるために高い光の透過性
が要求される。尚、LEDチップの電極とリード電極と
の間をワイヤーで接続する構造においてはワイヤを保護
する機能も有するものである。透光性封止樹脂6の材料
としては、エポキシ樹脂、シリコーン樹脂やアクリル樹
脂等が適しており、透光性封止樹脂6中にはLEDチッ
プ5からの光に対して特定のフィルター効果等を持たす
為に着色染料や着色顔料を添加することもできる。
(Transparent sealing resin 6) Transparent sealing resin 6
Is filled in the recess of the package to protect the LED chip 5 from external force, dust and the like, and high light transmittance is required to efficiently transmit the light from the LED chip 5 to the outside. Incidentally, the structure in which the electrode of the LED chip and the lead electrode are connected by a wire also has a function of protecting the wire. Epoxy resin, silicone resin, acrylic resin, or the like is suitable as the material of the light-transmitting sealing resin 6, and the light-transmitting sealing resin 6 has a specific filter effect against light from the LED chip 5. A coloring dye or a coloring pigment can be added in order to have

【0019】(LEDチップ5)LEDチップ5は、窒
化物半導体(InXGaYAl1-X-YN、0≦X、0≦
Y、0≦X+Y≦1)を用いて構成され、基板と反対側
に正負の電極がいずれも形成されている。すなわち、絶
縁性のサファイア基板上に良質な窒化物半導体を成長さ
せることができることから、窒化物半導体を用いた発光
素子は、サファイア基板を用いて構成される。このサフ
ァイア基板を用いた発光素子においては、サファイア基
板が絶縁体であることから、基板を介してn又はp側に
電流を供給することができないので、正及び負の電極は
いずれも半導体層上(同一面側)に形成されることにな
る。尚、この場合、発光した光はサファイア基板を介し
て取り出すことも、透光性の電極を形成することにより
半導体層側から取り出すことも可能であるが、本実施の
形態では、サファイア基板を介して光を取り出すように
構成している。
(LED Chip 5) The LED chip 5 is made of a nitride semiconductor (In x Ga Y Al 1 -XYN , 0 ≦ X, 0 ≦
Y, 0 ≦ X + Y ≦ 1), and both positive and negative electrodes are formed on the opposite side of the substrate. That is, since a high-quality nitride semiconductor can be grown on an insulating sapphire substrate, a light-emitting element using a nitride semiconductor is formed using a sapphire substrate. In the light emitting element using this sapphire substrate, since the sapphire substrate is an insulator, no current can be supplied to the n or p side through the substrate, so that both the positive and negative electrodes are on the semiconductor layer. (On the same surface side). In this case, the emitted light can be extracted through the sapphire substrate, or can be extracted from the semiconductor layer side by forming a light-transmitting electrode. In this embodiment mode, the emitted light can be extracted through the sapphire substrate. It is configured to extract light.

【0020】さらに詳細に説明すると、LEDチップ5
は、サファイア基板5s上に1又は2以上の層からなる
n型窒化物半導体層5e、活性層(図示せず)、1又は
2以上の層からなるp型窒化物半導体層5dが形成さ
れ、さらに正及び負の電極が以下のように形成されてな
る。すなわち、正の電極は、p型窒化物半導体層5dの
ほぼ全面に形成された電極5cと電極5cの一部に形成
されたパッド電極5aとからなり、負の電極はp型窒化
物半導体層5dの一部を除去して露出させたn型窒化物
半導体層5eの表面に形成された電極5bからなる。
More specifically, the LED chip 5
Are formed on a sapphire substrate 5s, an n-type nitride semiconductor layer 5e composed of one or more layers, an active layer (not shown), and a p-type nitride semiconductor layer 5d composed of one or more layers, Further, positive and negative electrodes are formed as follows. That is, the positive electrode is composed of the electrode 5c formed on almost the entire surface of the p-type nitride semiconductor layer 5d and the pad electrode 5a formed on a part of the electrode 5c, and the negative electrode is formed on the p-type nitride semiconductor layer. The electrode 5b is formed on the surface of the n-type nitride semiconductor layer 5e which is exposed by removing a part of 5d.

【0021】尚、活性層に効率的に電流を注入するため
に、p型窒化物半導体層5d又はn型窒化物半導体層5
eと良好なオーミック接触が得られる金属をそれぞれ、
電極5c及び電極5bとして用いる。また、本実施の形
態では、p型窒化物半導体層5dを覆う電極5cとして
活性層で発光する光を反射する金属膜を用いることが好
ましく、このような電極を用いると、活性層より出た光
の一部は電極で反射され、前面(基板を介して)から出
力される光を多くすることができる。
In order to efficiently inject a current into the active layer, the p-type nitride semiconductor layer 5d or the n-type nitride semiconductor layer 5
e and a metal that provides good ohmic contact,
Used as the electrode 5c and the electrode 5b. In the present embodiment, it is preferable to use a metal film that reflects light emitted from the active layer as the electrode 5c that covers the p-type nitride semiconductor layer 5d. Part of the light is reflected by the electrodes, and more light is output from the front surface (via the substrate).

【0022】以上のように構成されたLEDチップ5
は、成形体パッケージ1の第2凹部2cの底面に露出さ
せたリード電極3,4にそれぞれ、正及び負の電極を対
向させて半田を用いて接合することによりフリップチッ
プ実装ができる。このようにフリップチップ実装された
LED素子は、サファイヤ基板の光に対する高い透過性
により効率よく基板を介して光を出力することができ
る。
LED chip 5 configured as described above
The flip-chip mounting can be performed by bonding the lead electrodes 3 and 4 exposed on the bottom surface of the second concave portion 2c of the molded package 1 to each other with the positive and negative electrodes facing each other using solder. The flip-chip mounted LED element can efficiently output light through the sapphire substrate due to the high transmittance of the light to the substrate.

【0023】以上のように、本実施の形態の発光装置
は、正負のリード電極3,4がそれぞれ上記発光素子チ
ップの正負の電極と接続される部分を除いて実質的に成
形樹脂1aによって覆われている。これによって、リー
ド電極3,4と透光性樹脂6との界面を極めて小さくで
きるので、その界面の水分の気化膨張を実質的になくす
ことができ、厳しい使用環境においても高い信頼性を確
保することができる。
As described above, in the light emitting device of the present embodiment, the positive and negative lead electrodes 3 and 4 are substantially covered with the molding resin 1a except for the portions connected to the positive and negative electrodes of the light emitting element chip. Have been done. As a result, the interface between the lead electrodes 3 and 4 and the translucent resin 6 can be made extremely small, so that the vaporization and expansion of moisture at the interface can be substantially eliminated, and high reliability is secured even in a severe use environment. be able to.

【0024】また、本実施の形態の発光装置では、成形
樹脂にチタン酸バリウムや酸化チタン、酸化亜鉛、硫酸
バリウムなどの白色顔料などを混合することにより成形
樹脂表面の反射率を向上させることにより、発光素子チ
ップの電極側又は端面より放出される光を前方に取り出
すことができ、発光輝度を向上させることができる。詳
細には、図6の模式図に示すように、LEDチップの発
光点612から透光性封止材の表面604に臨界角以上
の角度θで入射した光608は、透光性封止剤と外部と
の界面(表面604)で臨界角反射されて、反射光60
9は拡散反射性を有するパッケージ表面(図6では凹部
の側面)に達する。その反射光609は、パッケージ表
面で散乱反射され、散乱光610のうち臨界角以下で表
面604に入射する光は、そのまま透光性封止剤から外
部に取り出される。また、散乱光の臨界角以上の光も透
光性封止材と外部との界面で臨界角反射して、再びパッ
ケージ表面に到着し上述と同じように散乱反射されその
一部が外部に放射される。このようにして発光した光の
大部分を外部に取り出すことができる。
In the light emitting device of the present embodiment, the reflectance of the surface of the molding resin is improved by mixing the molding resin with a white pigment such as barium titanate, titanium oxide, zinc oxide or barium sulfate. In addition, light emitted from the electrode side or the end face of the light emitting element chip can be extracted forward, and the light emission luminance can be improved. More specifically, as shown in the schematic diagram of FIG. 6, light 608 incident from the light emitting point 612 of the LED chip to the surface 604 of the translucent sealing material at an angle θ equal to or greater than the critical angle is transmitted through the translucent sealing agent. Is reflected at the critical angle at the interface (surface 604) between
Numeral 9 reaches the surface of the package having diffuse reflection (the side surface of the concave portion in FIG. 6). The reflected light 609 is scattered and reflected on the surface of the package, and of the scattered light 610, light incident on the surface 604 at a critical angle or less is directly extracted from the light-transmitting sealant to the outside. Also, light having a critical angle or more at the critical angle of the scattered light is reflected at the critical angle at the interface between the transparent sealing material and the outside, arrives at the package surface again, is scattered and reflected in the same manner as described above, and a part of the light is radiated to the outside. Is done. In this manner, most of the emitted light can be extracted to the outside.

【0025】変形例 以上の実施の形態では、LEDチップ5として窒化物半
導体を用いたものを例に説明したが、本発明はこれに限
られるものではなく、例えば、MOCVD法や液相成長
法などにより、GaP、GaAlAs、GaAlInP
などの半導体を用いて構成されたチップを用いてもよ
い。また、本発明では、LEDチップ5として、MIS
接合、PIN接合やpn接合などを有するホモ構造、ヘ
テロ構造、ダブルへテロ構造等の種々の構造のものを用
いることができる。さらに、本発明においてLEDチッ
プの実装はフリップチップ実装に限られるものではな
く、ワイヤーボンディングで電極間を接続する実装方法
を用いても良い。以上のように、本発明は上述の種々の
変形が可能であり、そのように変形しても、実施の形態
と同様の効果を有する。
Modifications In the above embodiment, an example using a nitride semiconductor as the LED chip 5 has been described. However, the present invention is not limited to this. For example, the MOCVD method or the liquid phase growth method GaP, GaAlAs, GaAlInP
Alternatively, a chip formed using a semiconductor such as a semiconductor chip may be used. Further, in the present invention, MIS is used as the LED chip 5.
Various structures such as a homo structure, a hetero structure, and a double hetero structure having a junction, a PIN junction, a pn junction, or the like can be used. Further, in the present invention, the mounting of the LED chip is not limited to the flip chip mounting, and a mounting method of connecting the electrodes by wire bonding may be used. As described above, the present invention can be variously modified as described above, and even if modified in such a manner, the present invention has the same effect as the embodiment.

【0026】[0026]

【実施例】以下、本発明に係る実施例の発光装置につい
て説明する。 (実施例1)実施例1は、LEDチップ5として青色
(470nm)が発光可能な窒化物半導体を発光層に持
ったLEDチップを用い、図1の実施の形態と同様の構
成を持った発光装置の例である。すなわち、本実施例1
において、成形体パッケージ1は図3に示す、金型50
7内に予めリード電極3,4を図3に示すように配置し
て、液晶ポリマーを注入硬化することにより作製する。
尚、注入する液晶ポリマーは、白色樹脂中にさらにフィ
ラーとして白色の酸化チタン粉末を40wt%程度混合
することにより、成形樹脂の表面が青色(470nm)
の光に対して高い反射率を有するようにしている。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a light emitting device according to an embodiment of the present invention will be described. (Example 1) In Example 1, an LED chip having a nitride semiconductor capable of emitting blue light (470 nm) in a light emitting layer was used as the LED chip 5, and a light emitting device having the same configuration as the embodiment of FIG. It is an example of an apparatus. That is, the first embodiment
In FIG. 3, the molded package 1 is a mold 50 shown in FIG.
The lead electrodes 3 and 4 are arranged in advance as shown in FIG. 3 and are prepared by injecting and curing a liquid crystal polymer.
The liquid crystal polymer to be injected is obtained by mixing white titanium oxide powder as a filler into a white resin in an amount of about 40 wt%, so that the surface of the molded resin becomes blue (470 nm).
Has a high reflectance with respect to the light.

【0027】以上のように作製した成形体パッケージ1
に、サファイア基板5sを介して光を出力するように作
製した青色発光が可能なLEDチップを、図2(b)に
示すように、フリップチップボンディングして、透光性
樹脂6で封止する。
The molded package 1 produced as described above
Next, an LED chip capable of emitting blue light produced so as to output light through the sapphire substrate 5s is flip-chip bonded and sealed with the translucent resin 6, as shown in FIG. .

【0028】以上のようにして作製したチップタイプL
ED素子である1000個の実施例1の発光装置を、6
0℃、90%の相対湿度のもとで24時間放置し、24
0℃で10秒間の条件でリフローを実施した後、電流を
供給したところ、1000個中1000個全て青色に発
光した。
The chip type L manufactured as described above
1000 light emitting devices of Example 1 as ED elements
Leave at 0 ° C. and 90% relative humidity for 24 hours.
After reflow was performed at 0 ° C. for 10 seconds, when current was supplied, all 1000 light emitted blue light out of 1,000 light.

【0029】これに対して、実施例1と比較するため
に、リード電極をパッケージの凹部の底面において、多
く露出している以外は実施例1のチップタイプLED素
子と同様にして比較例の1000個のチップタイプLE
D素子を作製して同様の試験を実施した。その結果、比
較例のチップタイプLED素子は、1000個中43個
発光しなかった。この発光しなかった不灯品を調べる
と、その全てにおいて封止樹脂がパッケージの凹部底面
から剥離し、LEDチップとリード電極の間の接続がは
がれていた。
On the other hand, in order to compare with the embodiment 1, the chip type LED element of the embodiment 1 was manufactured in the same manner as the chip type LED element of the embodiment 1 except that the lead electrode was largely exposed on the bottom surface of the concave portion of the package. Chip type LE
A similar test was performed by fabricating a D element. As a result, 43 out of 1,000 chip type LED elements of the comparative example did not emit light. Inspection of the unlit products that did not emit light revealed that in all of them, the sealing resin was peeled off from the bottom surface of the concave portion of the package, and the connection between the LED chip and the lead electrode was disconnected.

【0030】また、試験後、発光したものについて、実
施例1に係る発光装置と比較例の発光装置とを比較して
みると、実施例1のチップタイプLED素子は凹部2全
体が青色に発光しているように観測されたのに対し、比
較例のチップタイプLED素子は、LEDチップ近傍に
おいて顕著に発光しているように観測された。また、比
較例のチップタイプLED素子の平均発光輝度を100
として、前者のチップタイプLEDは約3割、輝度が高
く観測された。これは、実施例1のチップタイプLED
素子において、LEDチップによって発光された光は、
パッケージの凹部2において効果的に反射され効率良く
出力されることを示している。
When the light emitting device according to the first embodiment and the light emitting device according to the comparative example are compared with each other for the light emitting device after the test, the chip type LED element of the first embodiment emits blue light in the entire concave portion 2. In contrast, the chip-type LED element of the comparative example was observed to emit light remarkably near the LED chip. The average light emission luminance of the chip type LED element of the comparative example was 100
As a result, about 30% of the former chip type LEDs were observed to have high luminance. This is the chip type LED of Example 1.
In the element, the light emitted by the LED chip is
This shows that the light is effectively reflected at the concave portion 2 of the package and output efficiently.

【0031】以上のように、本発明に係る実施例1のチ
ップタイプLED素子は、成形体パッケージ1におい
て、リード電極3,4のうち、LEDチップと接続する
ための接続部を除く、ほとんどの部分は成形樹脂で覆わ
れているので、透光性樹脂6とパッケージ凹部底面との
間の剥離を防止でき、これにより信頼性を高くできるこ
とが確認された。また、本実施例1では、LEDチップ
をフリップチップ実装しているので、LEDチップの電
極を構成する金属と、透光性樹脂との境界面を極めて小
さくでき、リード電極3,4と透光性樹脂6との界面の
気化膨張の防止に加え、さらにLEDチップの電極を構
成する金属と、透光性樹脂6との境界面における気化膨
張を防止できる。これによって、発光素子表面とモール
ド樹脂との密着性も強化、及びその界面での剥離も防止
でき、より信頼性を高くできる。また、本発明に係る実
施例1のチップタイプLED素子は、白色液晶ポリマー
中にさらに白色で反射率の高い酸化チタンを含有させて
反射率を高くしかつ拡散反射を可能としたことにより、
LEDチップで発光した光を効率良く出力できることが
確認された。
As described above, the chip-type LED element according to the first embodiment of the present invention has almost all of the lead electrodes 3 and 4 of the molded package 1 except for the connection portion for connecting to the LED chip. Since the portion was covered with the molding resin, it was confirmed that peeling between the translucent resin 6 and the bottom surface of the concave portion of the package could be prevented, thereby improving reliability. Further, in the first embodiment, since the LED chip is flip-chip mounted, the boundary surface between the metal constituting the electrode of the LED chip and the light-transmitting resin can be made extremely small, and the lead electrodes 3 and 4 can be connected to the light-transmitting resin. In addition to preventing vaporization and expansion at the interface with the transparent resin 6, it is possible to further prevent vaporization and expansion at the boundary surface between the metal forming the electrodes of the LED chip and the translucent resin 6. Thereby, the adhesion between the surface of the light emitting element and the mold resin can be strengthened, and separation at the interface can be prevented, so that the reliability can be further improved. Further, the chip-type LED element of Example 1 according to the present invention has a white liquid crystal polymer further containing titanium oxide having a high reflectance in white to increase the reflectance and enable diffuse reflection.
It was confirmed that the light emitted from the LED chip could be output efficiently.

【0032】(実施例2)本発明に係る実施例2のチッ
プタイプLED素子(発光装置)は、表面に正の電極が
形成され裏面(基板の下面)に負の電極が形成されてな
るGaAs系のLEDチップ105を用いて、本発明の
構成を適用した例を示したものである。本実施例2のチ
ップタイプLED素子において、成形体パッケージ10
0は図4,図5に示すように、凹部102において第1
接続凹部102cでリード電極4の一部を露出させ、第
2接続凹部102dでリード電極3の一部を露出させて
いる。
(Embodiment 2) A chip type LED element (light emitting device) according to Embodiment 2 of the present invention is a GaAs having a positive electrode formed on the front surface and a negative electrode formed on the back surface (lower surface of the substrate). An example in which the configuration of the present invention is applied using a system LED chip 105 is shown. In the chip type LED element of the second embodiment, the molded package 10
0 is the first in the concave portion 102 as shown in FIGS.
A part of the lead electrode 4 is exposed in the connection recess 102c, and a part of the lead electrode 3 is exposed in the second connection recess 102d.

【0033】そして、実施例2では、上述のように構成
されたLEDチップ105の裏面に形成された負電極を
接続凹部102cに露出したリード電極4に対向させて
導電性接着剤、半田等により接合し、表面の正電極を第
2接続凹部102dに露出させたリード電極3に金線1
10を用いてワイヤボンディングにより接続する。
In the second embodiment, the negative electrode formed on the back surface of the LED chip 105 configured as described above is opposed to the lead electrode 4 exposed in the connection recess 102c by a conductive adhesive, solder, or the like. The gold wire 1 is connected to the lead electrode 3 which has been joined and the positive electrode on the surface is exposed to the second connection recess 102d.
10 and connected by wire bonding.

【0034】以上のように作製した実施例2のチップタ
イプLED素子は、実施例1と同様の効果を有してい
た。また、実施例2のチップタイプLED素子につい
て、−40℃、15分間放置したものを100℃、15
分間放置することを1サイクルとする気相熱衝撃試験を
実施したところ、本実施例2のチップタイプLED素子
では3000サイクル時点でもワイヤは断線しなかった
が、本発明と比較のために作製したチップタイプLED
素子では3000サイクル時点で100個中5個につい
てワイヤの断線が発生していた。
The chip type LED device of Example 2 manufactured as described above had the same effect as that of Example 1. The chip type LED element of Example 2 was left at -40 ° C for 15 minutes,
When a gas phase thermal shock test was performed in which leaving for 1 minute was one cycle, the wire was not broken even at the time of 3000 cycles in the chip type LED element of Example 2, but it was prepared for comparison with the present invention. Chip type LED
In the device, wire breakage occurred in 5 out of 100 wires at 3000 cycles.

【0035】[0035]

【発明の効果】以上、詳細に説明したように、本発明に
係る発光装置は、上記正及び負のリード電極がそれぞれ
上記発光素子チップの正負の電極と接続される部分を除
いて実質的に上記成形樹脂によって覆われているので、
上記正負のリード電極と上記透光性樹脂の界面における
気化膨張を防止でき、かつ上記成形体と上記透光性樹脂
との密着性を強くできる。これによって、本発明に係る
発光装置は、上記成形体と上記透光性樹脂との界面の剥
離を効果的に防止でき、極めて信頼性を高くできる。
As described in detail above, the light emitting device according to the present invention is substantially identical to the light emitting device except that the positive and negative lead electrodes are respectively connected to the positive and negative electrodes of the light emitting element chip. Because it is covered by the molding resin,
Evaporation and expansion at the interface between the positive and negative lead electrodes and the translucent resin can be prevented, and the adhesion between the molded body and the translucent resin can be enhanced. Thereby, the light emitting device according to the present invention can effectively prevent the interface between the molded body and the translucent resin from peeling off, and can achieve extremely high reliability.

【0036】また、本発明に係る発光装置においては、
上記成形体が発光チップを収納する凹部を有し、該凹部
に上記発光素子チップを設け上記透光性樹脂で封止する
ようにしても良い。さらに、上記凹部が形成された成形
体を用いた発光装置では、上記凹部の表面の少なくとも
一部は上記発光素子チップの発生する光を反射するよう
に処理されていることが好ましく、これによって、上記
発光チップで発光した光を効果的に上方に出力すること
ができ、光の取りだし効率を高めることができる。
In the light emitting device according to the present invention,
The molded body may have a concave portion for accommodating a light emitting chip, and the light emitting element chip may be provided in the concave portion and sealed with the translucent resin. Furthermore, in the light emitting device using the molded body in which the concave portion is formed, it is preferable that at least a part of the surface of the concave portion is treated so as to reflect light generated by the light emitting element chip. The light emitted from the light emitting chip can be effectively output upward, and the light extraction efficiency can be increased.

【0037】また、本発明に係る発光装置において、発
光素子チップをフリップチップ実装することにより、上
記正負のリード電極と上記透光性樹脂との界面の面積を
より小さくできるので、さらに信頼性を高くでき、ま
た、ワイヤボンディングで接続する方法に比較して発光
装置の薄型化が可能となる。
Also, in the light emitting device according to the present invention, the area of the interface between the positive and negative lead electrodes and the light transmitting resin can be reduced by mounting the light emitting element chip by flip chip mounting. In addition, the thickness of the light emitting device can be reduced as compared with a method of connecting by wire bonding.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明に係る実施の形態の発光装置の平面図
である。
FIG. 1 is a plan view of a light emitting device according to an embodiment of the present invention.

【図2】 (a)は図1のA−A’線についての断面図
であり、(b)は、(a)のLEDチップ5の部分を拡
大して示す断面図である。
2A is a cross-sectional view taken along line AA ′ of FIG. 1, and FIG. 2B is an enlarged cross-sectional view showing a part of the LED chip 5 in FIG.

【図3】 本発明に係る実施の形態の発光装置の成形体
パッケージを作製するための金型の断面図である。
FIG. 3 is a cross-sectional view of a mold for producing a molded body package of the light emitting device according to the embodiment of the present invention.

【図4】 本発明に係る実施例2のチップタイプLED
素子(発光装置)の平面図である。
FIG. 4 shows a chip type LED according to a second embodiment of the present invention.
It is a top view of an element (light emitting device).

【図5】 図4のB−B’線についての断面図である。FIG. 5 is a sectional view taken along line B-B ′ of FIG. 4;

【図6】 本発明に係る実施の形態の凹部表面における
反射を模式的に示す模式図である。
FIG. 6 is a schematic diagram schematically showing reflection on a concave surface according to the embodiment of the present invention.

【図7】 従来例の問題点を説明するための断面図であ
る。
FIG. 7 is a cross-sectional view for explaining a problem of the conventional example.

【符号の説明】[Explanation of symbols]

1,100…成形体パッケージ、 1a…成形樹脂、 2,102…凹部、 2a…側壁、 2b…凹部底面、 2c…第2凹部、 3,4…リード電極、 5,105…LEDチップ、 5a…パッド電極、 5b,5c…電極、 5d…p型窒化物半導体層、 5e…n型窒化物半導体層、 5s…サファイア基板、 6…透光性樹脂、 102c…第1接続凹部、 102d…第2接続凹部、 110…金線、 507…金型。 1,100: molded package, 1a: molded resin, 2,102: concave, 2a: side wall, 2b: concave bottom, 2c: second concave, 3, 4: lead electrode, 5, 105: LED chip, 5a: Pad electrode, 5b, 5c: electrode, 5d: p-type nitride semiconductor layer, 5e: n-type nitride semiconductor layer, 5s: sapphire substrate, 6: translucent resin, 102c: first connection recess, 102d: second Connection recess, 110: gold wire, 507: mold.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 正及び負のリード電極と成形樹脂とが一
体成形されてなる成形体と、上記正及び負のリード電極
にそれぞれ接続された正及び負の電極を有する発光素子
チップとを備え、該発光素子チップが上記成形体上に透
光性樹脂で封止されてなる発光素子であって、 上記正及び負のリード電極がそれぞれ上記発光素子チッ
プの正負の電極と接続される部分を除いて実質的に上記
成形樹脂によって覆われていることを特徴とする発光装
置。
1. A molded body in which positive and negative lead electrodes and a molding resin are integrally molded, and a light emitting element chip having positive and negative electrodes connected to the positive and negative lead electrodes, respectively. A light-emitting element in which the light-emitting element chip is sealed on the molded body with a light-transmitting resin, wherein a portion where the positive and negative lead electrodes are respectively connected to the positive and negative electrodes of the light-emitting element chip A light emitting device characterized by being substantially covered with the molding resin except for the above.
【請求項2】 上記成形体は凹部を有し、上記発光素子
チップは該凹部において上記透光性樹脂で封止されてい
る請求項1記載の発光装置。
2. The light emitting device according to claim 1, wherein the molded body has a concave portion, and the light emitting element chip is sealed in the concave portion with the translucent resin.
【請求項3】 上記凹部の表面の少なくとも一部は上記
発光素子チップの発生する光を反射するように処理され
ている請求項2記載の発光装置。
3. The light emitting device according to claim 2, wherein at least a part of the surface of the concave portion is treated so as to reflect light generated by the light emitting element chip.
【請求項4】 上記発光素子チップは発光面と反対側の
面に上記正負の電極が共に形成されてなり、かつ上記成
形体は上記正負のリード電極がそれぞれ上記発光素子チ
ップの上記正負の電極と対向するように露出されてな
り、上記正負のリード電極は該露出された部分で上記正
負の電極と導通するように接合されている請求項1〜3
のうちのいずれか1項に記載の発光装置。
4. The light emitting element chip has both the positive and negative electrodes formed on a surface opposite to a light emitting surface, and the molded body has the positive and negative lead electrodes respectively provided on the positive and negative electrodes of the light emitting element chip. The positive and negative lead electrodes are joined so as to be electrically connected to the positive and negative electrodes at the exposed portions.
The light emitting device according to any one of the above.
JP19193499A 1999-07-06 1999-07-06 Light emitting device Expired - Fee Related JP3632507B2 (en)

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