JP2001015778A - Substrate for solar cell - Google Patents
Substrate for solar cellInfo
- Publication number
- JP2001015778A JP2001015778A JP11183163A JP18316399A JP2001015778A JP 2001015778 A JP2001015778 A JP 2001015778A JP 11183163 A JP11183163 A JP 11183163A JP 18316399 A JP18316399 A JP 18316399A JP 2001015778 A JP2001015778 A JP 2001015778A
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- substrate
- polyimide
- film
- polyimide resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Photovoltaic Devices (AREA)
Abstract
(57)【要約】
【課題】 光電変換効率、絶縁性、軽量性、可撓性性に
優れた太陽電池用基板を提供する。
【解決手段】 ポリイミドフィルムに絶縁性微粒子を分
散させたポリイミド樹脂層を積層してなる太陽電池用基
板。(57) Abstract: Provided is a solar cell substrate having excellent photoelectric conversion efficiency, insulation properties, light weight, and flexibility. SOLUTION: A solar cell substrate comprising a polyimide film laminated with a polyimide resin layer in which insulating fine particles are dispersed.
Description
【0001】[0001]
【発明の属する技術分野】本発明は太陽電池用基板に関
し、特に薄膜太陽電池を形成するための基板に関する。The present invention relates to a substrate for a solar cell, and more particularly to a substrate for forming a thin film solar cell.
【0002】[0002]
【従来の技術】現在、非晶質Si太陽電池用の基板とし
ては、一般的にガラス基板やステンレス基板が用いられ
ている。この非晶質Si太陽電池の変換効率を向上させ
るため、太陽光の吸収量を増加させる方法として、最近
では絶縁基板の表面に微細な凹凸を形成する方法が提案
されている(特開平7−254721号)。また、ステ
ンレス板表面に絶縁性微粒子を分散させたポリイミド樹
脂膜を設けた耐熱性基板が提案されている(特開平10
−329268号)。2. Description of the Related Art At present, a glass substrate or a stainless steel substrate is generally used as a substrate for an amorphous Si solar cell. In order to improve the conversion efficiency of the amorphous Si solar cell, a method of forming fine irregularities on the surface of an insulating substrate has recently been proposed as a method of increasing the amount of absorbed sunlight (Japanese Patent Laid-Open No. 7-1995). No. 254721). Further, a heat-resistant substrate having a surface of a stainless steel plate provided with a polyimide resin film in which insulating fine particles are dispersed has been proposed (Japanese Patent Laid-Open No.
-329268).
【0003】[0003]
【発明が解決しようとする課題】しかしながら、太陽電
池用の基板としてガラス板やステンレスのような金属板
を用いることは、非晶質Si太陽電池の特徴である薄膜
及び可撓性を生かすことができない欠点がある。他方、
平滑で薄膜化が可能な絶縁性の耐熱性フィルムを基板と
して太陽電池を形成した場合は軽量性や可撓性は得られ
るものの、太陽光の電気への変換効率が十分に向上しな
いという問題がある。However, the use of a glass plate or a metal plate such as stainless steel as a substrate for a solar cell makes it possible to take advantage of the thin film and flexibility characteristic of an amorphous Si solar cell. There are drawbacks that can not be done. On the other hand,
When a solar cell is formed using a heat-resistant insulating film that can be made thin and thin, a light weight and flexibility can be obtained, but there is a problem that a conversion efficiency of sunlight into electricity is not sufficiently improved. is there.
【0004】[0004]
【課題を解決するための手段】本発明者等は、かかる状
況にあって、上記従来技術の諸欠点を一挙に解決した耐
熱性基板を提供すべく、鋭意検討の結果本発明を完成し
たものである。本発明は、ポリイミドフィルムに絶縁性
微粒子を分散させたポリイミド樹脂層を積層してなる太
陽電池用基板である。Under these circumstances, the present inventors have made intensive studies to provide a heat-resistant substrate which can solve the above-mentioned drawbacks of the prior art at once, and have completed the present invention. It is. The present invention is a solar cell substrate formed by laminating a polyimide resin layer in which insulating fine particles are dispersed on a polyimide film.
【0005】[0005]
【発明の実施の形態】以下、本発明を詳細に説明する。
本発明におけるポリイミドフィルムとは、芳香族酸無水
物と芳香族ジアミンとを混合したポリアミド酸の樹脂溶
液を流延法により製膜しキュアーして製造する、厚さが
通常20〜200μm程度の一般的なポリイミドフィル
ムであり、例えば、ピロメリット酸無水物(PMDA)
と4,4’オキシジアニリン(ODA)の縮合物である
商品名KAPTON、ビフェニルテトラカルボン酸無水
物(BPDA)と4,4’オキシジアニリン(ODA)
の縮合物である商品名ユーピレックス−R、ビフェニル
テトラカルボン酸無水物(BPDA)とパラフェニレン
ジアミン(PPD)の縮合物である商品名ユーピレック
ス−S等が挙げられる。ポリイミドフィルムは、光電変
換層を成膜するためにスパッター及びCVDの工程で基
板温度が250℃程度に上昇しても耐熱性があるため、
本発明の太陽電池用基板の基材としての要件を満たす。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail.
The polyimide film in the present invention is produced by casting and curing a resin solution of polyamic acid obtained by mixing an aromatic acid anhydride and an aromatic diamine, which is generally about 20 to 200 μm in thickness. Typical polyimide film, for example, pyromellitic anhydride (PMDA)
KAPTON, which is a condensate of 4,4 'oxydianiline (ODA) with biphenyltetracarboxylic anhydride (BPDA) and 4,4' oxydianiline (ODA)
And the trade name Iupirex-R, which is a condensate of biphenyltetracarboxylic anhydride (BPDA) and paraphenylenediamine (PPD). Since the polyimide film has heat resistance even when the substrate temperature rises to about 250 ° C. in the steps of sputtering and CVD in order to form a photoelectric conversion layer,
It satisfies the requirements as the base material of the solar cell substrate of the present invention.
【0006】本発明の太陽電池用基板は、上記のポリイ
ミドフィルムの表面に球状微粒子を分散させたポリイミ
ド樹脂層を積層してなる。このポリイミド樹脂層で用い
るポリイミド樹脂とは、前記の特開平10−32926
8号に例示されているようなポリイミド、ポリアミドイ
ミド、ポリエーテルイミド及び、およびこれらの混合物
であって、溶媒可溶性のものを言う。ポリイミド系樹脂
には、第二成分として、例えばポリサルホン、ポリエー
テルポリサルホンなどの溶媒可溶性の樹脂を混合したも
のも含まれる。ポリイミド系樹脂の具体例としては、ベ
ンゾフェノンテトラカルボン酸二無水物(BTDA)
と、二種の芳香族ジイソシアネート、すなわち、4,4
´−ジフェニルメタンジイソシアネートおよび2,4−
トリレンジイソシアネートを共重合させたもの、ビフェ
ニルテトラカルボン酸二無水物(BPDA)と、芳香族
ジアミンからポリアミド酸を経由して合成される構造の
ものが挙げられる。また、芳香族ジアミンと、芳香族テ
トラカルボン酸及び/ 又はその誘導体を溶質として溶
媒中に溶解しているポリイミド前駆体溶液としてポリイ
ミドフィルムの表面に塗布し、その後の熱処理により熱
可塑性ポリイミドを形成するものであってもよく、具体
的には、4,4’−オキシジアニリン及び/又は3,
4’−オキシジアニリンと4,4’−オキシジフタル酸
及び/又はその誘導体との組み合わせ、又は、4,4’
−オキシジアニリン又は3,4’−オキシジアニリン、
及びパラフェニレンジアミンと4,4’− オキシジフ
タル酸酸及び/又はその誘導体との組み合わせなどが例
示される。The solar cell substrate of the present invention is obtained by laminating a polyimide resin layer in which spherical fine particles are dispersed on the surface of the above-mentioned polyimide film. The polyimide resin used in this polyimide resin layer is described in JP-A-10-32926.
No. 8, polyimides, polyamideimides, polyetherimides, and mixtures thereof, which are solvent-soluble. The polyimide-based resin also includes a mixture of a solvent-soluble resin such as polysulfone and polyether polysulfone as the second component. Specific examples of the polyimide resin include benzophenonetetracarboxylic dianhydride (BTDA)
And two aromatic diisocyanates, ie, 4,4
'-Diphenylmethane diisocyanate and 2,4-
Examples thereof include those obtained by copolymerizing tolylene diisocyanate, and those synthesized from biphenyltetracarboxylic dianhydride (BPDA) and aromatic diamine via polyamic acid. In addition, an aromatic diamine and an aromatic tetracarboxylic acid and / or a derivative thereof are applied as a solute on a polyimide film surface as a polyimide precursor solution in which a thermoplastic polyimide is dissolved in a solvent, followed by heat treatment to form a thermoplastic polyimide. And specifically, 4,4′-oxydianiline and / or 3,4′-oxydianiline
A combination of 4'-oxydianiline and 4,4'-oxydiphthalic acid and / or a derivative thereof, or 4,4 '
-Oxydianiline or 3,4'-oxydianiline,
And a combination of paraphenylenediamine with 4,4′-oxydiphthalic acid and / or a derivative thereof.
【0007】一方、上記ポリイミド樹脂に分散させる絶
縁性微粒子としては、その平均粒径が0.1〜1.0μ
mのものが好適である。太陽光の波長は、0.4〜1.
2μmの範囲にあり本発明の目的である吸収量を増加さ
せるための光路長を増加させるには、0.1μm未満ま
たは1.0μmを超えるのはあまり好ましくない。使用
される絶縁性微粒子としては、炭酸カルシウム、アルミ
ナ、シリカ、酸化チタンなどが挙げられる。中でもシリ
カが好適に用いられる。微粉子のポリイミド系樹脂への
配合量は、その種類、平均粒径、被膜の厚さなどにより
変るが、その層表面に微細な凹凸を形成させて太陽光の
吸収量を高めるようにすることが必要であり、ポリイミ
ド系樹脂に対してが5〜500重量%とするのが好まし
い。微粒子の配合量が5重量%未満であると層の表面に
微細な凹凸を形成することが難しく、配合量が500重
量%を超えると被膜にピンホールが発生し易いので好ま
しくない。On the other hand, the insulating fine particles dispersed in the polyimide resin have an average particle diameter of 0.1 to 1.0 μm.
m is preferred. The wavelength of sunlight is 0.4-1.
In order to increase the optical path length in the range of 2 μm for increasing the absorption amount which is the object of the present invention, less than 0.1 μm or more than 1.0 μm is less preferable. Examples of the insulating fine particles to be used include calcium carbonate, alumina, silica, and titanium oxide. Among them, silica is preferably used. The amount of fine powder mixed into the polyimide resin varies depending on the type, average particle size, thickness of the coating, etc., but it is necessary to form fine irregularities on the surface of the layer to increase the amount of sunlight absorption. Is required, and the content is preferably 5 to 500% by weight based on the polyimide resin. If the compounding amount of the fine particles is less than 5% by weight, it is difficult to form fine irregularities on the surface of the layer, and if the compounding amount exceeds 500% by weight, pinholes are easily generated in the coating, which is not preferable.
【0008】ポリイミドフィルムに球状微粒子を分散さ
せたポリイミド樹脂層を積層する方法としては、通常、
ポリイミド成分を溶媒に溶解し、且つ微粒子成分を分散
させた溶液をポリイミドフィルムの表面に塗布する方法
が採用される。使用可能な溶媒としては、N−メチルピ
ロリドン、N,N´−ジメチルホルムアミド、o−メチ
ルフェノール、m−メチルフェノール、p−メチルフェ
ノール、o−クロロフェノール、p−クロロフェノー
ル、2,4−ジクロロフェノール、ジエチレングリコー
ルジメチルエーテルなどが挙げられる。中でも、N−メ
チルピロリドン、N,N´−ジメチルホルムアミドが好
適である。塗布液の樹脂の濃度は、塗布作業が円滑に遂
行できる程度の粘度が得られるように1〜25重量%の
範囲で選ぶのが好ましい。As a method of laminating a polyimide resin layer in which spherical fine particles are dispersed on a polyimide film, usually,
A method in which a polyimide component is dissolved in a solvent and a solution in which the fine particle component is dispersed is applied to the surface of the polyimide film. Usable solvents include N-methylpyrrolidone, N, N'-dimethylformamide, o-methylphenol, m-methylphenol, p-methylphenol, o-chlorophenol, p-chlorophenol, 2,4-dichlorophenol Examples include phenol and diethylene glycol dimethyl ether. Among them, N-methylpyrrolidone and N, N'-dimethylformamide are preferred. The concentration of the resin in the coating liquid is preferably selected in the range of 1 to 25% by weight so as to obtain a viscosity such that the coating operation can be performed smoothly.
【0009】塗布液の調製方法としては、絶縁性微粒子
をポリイミド樹脂の希薄溶液中に分散させた状態の溶液
を調整する。分散性を向上させるためには、溶液中に分
散剤を添加しても良い。塗布の方法としては、ダイコー
ト法、ロールコート法、フローコート法、、ドクターブ
レードコート法等が挙げられる。中でも、ダイコート
法、ロールコート法が好適に用いられポリイミドフィル
ムを移動させながら連続的に塗布する。塗布液の樹脂濃
度及び粘度等を調節して湿った状態の塗布膜の厚さを5
〜100μm程度とし、塗布乾燥後の被膜の厚さが好ま
しくは1〜20μmとなるように調節する。膜厚が1μ
m未満では、均一な膜厚を形成するのが難しくまた20
μmを超えると膜の柔軟性が減少するのに加えて経済的
でない。塗布操作が完了したら、直ちに塗布薄膜を加熱
乾燥する。加熱乾燥の方法は、乾燥の初期を風が当たら
ない状態で乾燥し、溶媒が飛散したらポリイミド樹脂を
硬化させるため、300℃程度まで昇温し薄膜を形成さ
せる。As a method of preparing a coating solution, a solution in which insulating fine particles are dispersed in a dilute solution of a polyimide resin is prepared. In order to improve dispersibility, a dispersant may be added to the solution. Examples of the coating method include a die coating method, a roll coating method, a flow coating method, and a doctor blade coating method. Among them, a die coating method and a roll coating method are preferably used, and the polyimide film is continuously applied while moving. By adjusting the resin concentration and viscosity of the coating liquid, the thickness of the wet coating film is adjusted to 5
The thickness is adjusted so that the thickness of the coating after coating and drying is preferably 1 to 20 μm. 1μ thickness
If it is less than m, it is difficult to form a uniform film thickness and
If it exceeds μm, the flexibility of the membrane is reduced, and it is not economical. As soon as the coating operation is completed, the coated thin film is heated and dried. In the method of heating and drying, the initial stage of drying is performed in a state where air is not applied, and the temperature is raised to about 300 ° C. to form a thin film in order to cure the polyimide resin when the solvent is scattered.
【0010】以上のようにして、本発明の太陽電池用基
板は製造されるが、その後、本基板上に光電変換用積層
構造が形成され薄膜太陽電池が製造される。この太陽電
池は、基板表面に形成された微少な凹凸から入射した太
陽光の光路長を増加させ、吸収量を増大する事により光
電変換効率を向上できる。また、光電変換用積層構造と
して、Ag,Alのような金属電極 a−Si(p層,
i層,n層)ITO,SnO2のような透明電極の順に
スパッター、CVDで成膜するが、この際、本発明の太
陽電池用基板における表面の微少な凹凸の形成が、基板
と金属電極の密着性を向上させる効果ももたらす。As described above, the solar cell substrate of the present invention is manufactured. Thereafter, a laminated structure for photoelectric conversion is formed on the substrate to manufacture a thin film solar cell. In this solar cell, the photoelectric conversion efficiency can be improved by increasing the optical path length of the sunlight incident from the minute unevenness formed on the substrate surface and increasing the absorption amount. Further, as a photoelectric conversion laminated structure, a metal electrode such as Ag or Al a-Si (p layer,
(i-layer, n-layer) A transparent electrode such as ITO and SnO 2 is formed by sputtering and CVD in this order. At this time, the formation of fine irregularities on the surface of the solar cell substrate according to the present invention depends on the substrate and the metal electrode. This also has the effect of improving the adhesion.
【0011】[0011]
【実施例】以下、本発明を実施例に基いて詳細に説明す
るが、本発明はその趣旨を越えない限り以下の記載例に
限定されるものではない。 実施例1 3,3’,4,4’−ベンゾフェノンテトラカルボン酸
無水物(BTDA)と4,4’−ジフェニルメタンジイ
ソシアネート及び2,4−トリレンジイソシアネートを
共重合させて得たポリイミド樹脂をジメチルホルムアミ
ドに溶解させ、固形分濃度15%の溶液とした。この溶
液に平均粒径0.3μmの球状シリカを、ポリイミド固
形分濃度に対し250重量%を加えてサンドミルで撹拌
混合した後、孔径1μmのフィルターで濾過して薄膜形
成用の溶液とした。他方ピロメリット酸無水物(PMD
A)と4,4’オキシジアニリン(ODA)縮合体であ
るポリイミドフィルム(商品名KAPTON、巾300
mm,厚さ75μm)を基材とし、この片面に上記記載
の薄膜形成用の溶液をダイコーターで湿り膜厚50μm
を塗布し、80℃の乾燥炉で10分間乾燥した。その後
該塗布コイルを乾燥炉で80℃から300℃まで30分
で昇温し、300℃で30分乾燥した。得られたポリイ
ミド系樹脂層の厚さは5μmであった。EXAMPLES The present invention will be described below in detail with reference to examples, but the present invention is not limited to the following description unless it exceeds the gist. Example 1 A polyimide resin obtained by copolymerizing 3,3 ′, 4,4′-benzophenonetetracarboxylic anhydride (BTDA) with 4,4′-diphenylmethane diisocyanate and 2,4-tolylene diisocyanate was prepared by using dimethylformamide. To give a solution having a solid concentration of 15%. To this solution was added 250% by weight of spherical silica having an average particle diameter of 0.3 μm based on the solid content of polyimide, and the mixture was stirred and mixed by a sand mill. On the other hand, pyromellitic anhydride (PMD
A) and a polyimide film that is a condensate of 4,4 ′ oxydianiline (ODA) (trade name: KAPTON, width 300)
mm, thickness 75 μm) as a base material, and the above-mentioned solution for forming a thin film is wetted on one surface with a die coater to a film thickness of 50 μm.
And dried in a drying oven at 80 ° C. for 10 minutes. Thereafter, the coating coil was heated in a drying furnace from 80 ° C. to 300 ° C. in 30 minutes, and dried at 300 ° C. for 30 minutes. The thickness of the obtained polyimide resin layer was 5 μm.
【0012】実施例2 球状シリカの平均粒径が0.5μmのものをポリイミド
固形分濃度に対し300重量%を加えて薄膜形成用の溶
液とした以外は、実施例1と同様にしてポリイミドフィ
ルムを基材とした基板を作成した。得られたポリイミド
系樹脂の厚さは7μmであった。Example 2 A polyimide film was prepared in the same manner as in Example 1 except that a spherical silica having an average particle size of 0.5 μm was added as a solution for forming a thin film by adding 300% by weight to the solid content of polyimide. Was prepared as a substrate. The thickness of the obtained polyimide resin was 7 μm.
【0013】応用例 実施例1、2及び表面に微粒子が積層されていないポリ
イミドフィルムの表面に、まず、スパッター法でAg膜
を2000オングストロームの厚みで金属電極として形
成した。更に、この金属電極の上にnip接合をもつ厚
さ5000オングストロームのアモルファスシリコン膜
(光電変換層)をプラズマCVD法で形成した。最後に
透明電極としてITO膜を600オングストロームの厚
さでスパッター法で形成し薄膜太陽電池を作成した。実
施例1、2で得られた太陽電池の変換効率は、微粒子が
積層されていないポリイミドフィルムを使用した太陽電
池と比較して、30〜50%高い値を示した。APPLICATION EXAMPLES In Examples 1 and 2, and on the surface of a polyimide film having no fine particles laminated on the surface, first, an Ag film was formed as a metal electrode to a thickness of 2000 Å by sputtering. Further, an amorphous silicon film (photoelectric conversion layer) having a nip junction and a thickness of 5000 Å was formed on the metal electrode by a plasma CVD method. Finally, an ITO film was formed as a transparent electrode with a thickness of 600 angstroms by a sputtering method to produce a thin-film solar cell. The conversion efficiency of the solar cells obtained in Examples 1 and 2 was 30 to 50% higher than that of a solar cell using a polyimide film on which fine particles were not laminated.
【0014】[0014]
【発明の効果】本発明の太陽電池用基板は、軽量で可撓
性に優れているほか、耐熱性、耐薬品性、電気絶縁性な
どの面でも良好であるうえ、安価なコストにて製造が可
能である。また、本発明の太陽電池用基板においては、
ポリイミドフィルムに積層した絶縁性微粒子を分散させ
たポリイミド系樹脂層の表面に微細な凹凸が形成され、
入射した光線を好ましく乱反射させて絶縁基板の表面に
封じ込めることができるので、太陽電池基板として高い
光電変換効率が達成される。The solar cell substrate of the present invention is lightweight, excellent in flexibility, good in heat resistance, chemical resistance, electrical insulation, etc. and manufactured at low cost. Is possible. Further, in the solar cell substrate of the present invention,
Fine irregularities are formed on the surface of the polyimide resin layer in which the insulating fine particles laminated on the polyimide film are dispersed,
Since the incident light beam can be preferably diffusely reflected and confined on the surface of the insulating substrate, high photoelectric conversion efficiency can be achieved as a solar cell substrate.
フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) // C08J 5/18 CFG C08J 5/18 CFG Fターム(参考) 4F071 AA60 AB18 AB21 AB26 AH12 BA03 BB02 BC01 4J002 CM041 DE146 DE236 DJ016 FD016 GF00 GQ00 5F051 AA05 BA15 CA15 DA04 GA03 GA05 Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat II (reference) // C08J 5/18 CFG C08J 5/18 CFG F term (reference) 4F071 AA60 AB18 AB21 AB26 AH12 BA03 BB02 BC01 4J002 CM041 DE146 DE236 DJ016 FD016 GF00 GQ00 5F051 AA05 BA15 CA15 DA04 GA03 GA05
Claims (2)
散させたポリイミド樹脂層を積層してなる太陽電池用基
板。1. A solar cell substrate comprising a polyimide film and a polyimide resin layer in which insulating fine particles are dispersed.
〜1μmの絶縁性微粉子を5〜500重量%分散させた
請求項1の太陽電池用基板。2. The polyimide resin layer has an average particle size of 0.1.
The solar cell substrate according to claim 1, wherein the insulating fine particles of 1 to 1 µm are dispersed in 5 to 500% by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11183163A JP2001015778A (en) | 1999-06-29 | 1999-06-29 | Substrate for solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11183163A JP2001015778A (en) | 1999-06-29 | 1999-06-29 | Substrate for solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001015778A true JP2001015778A (en) | 2001-01-19 |
Family
ID=16130903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11183163A Pending JP2001015778A (en) | 1999-06-29 | 1999-06-29 | Substrate for solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001015778A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007083527A1 (en) * | 2006-01-20 | 2007-07-26 | Kaneka Corporation | Polyimide film and method for production thereof |
| WO2008133082A1 (en) * | 2007-04-13 | 2008-11-06 | Ube Industries, Ltd. | Polyimide film having smoothness on one surface |
| JP2010278180A (en) * | 2009-05-28 | 2010-12-09 | Sumitomo Bakelite Co Ltd | Solar cell substrate |
-
1999
- 1999-06-29 JP JP11183163A patent/JP2001015778A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007083527A1 (en) * | 2006-01-20 | 2007-07-26 | Kaneka Corporation | Polyimide film and method for production thereof |
| WO2008133082A1 (en) * | 2007-04-13 | 2008-11-06 | Ube Industries, Ltd. | Polyimide film having smoothness on one surface |
| JP5327640B2 (en) * | 2007-04-13 | 2013-10-30 | 宇部興産株式会社 | Smooth polyimide film on one side |
| JP2010278180A (en) * | 2009-05-28 | 2010-12-09 | Sumitomo Bakelite Co Ltd | Solar cell substrate |
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