JP2001080963A - SiC SINTERED COMPACT - Google Patents
SiC SINTERED COMPACTInfo
- Publication number
- JP2001080963A JP2001080963A JP25174799A JP25174799A JP2001080963A JP 2001080963 A JP2001080963 A JP 2001080963A JP 25174799 A JP25174799 A JP 25174799A JP 25174799 A JP25174799 A JP 25174799A JP 2001080963 A JP2001080963 A JP 2001080963A
- Authority
- JP
- Japan
- Prior art keywords
- sic sintered
- sintered compact
- sic
- polishing
- micro
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 claims abstract description 23
- 239000012298 atmosphere Substances 0.000 claims abstract description 9
- 239000013078 crystal Substances 0.000 claims abstract description 9
- 238000005498 polishing Methods 0.000 claims abstract description 8
- 238000007730 finishing process Methods 0.000 claims 2
- 239000010410 layer Substances 0.000 abstract description 6
- 239000000843 powder Substances 0.000 abstract description 5
- 229910003460 diamond Inorganic materials 0.000 abstract description 4
- 239000010432 diamond Substances 0.000 abstract description 4
- 230000008020 evaporation Effects 0.000 abstract description 2
- 239000002344 surface layer Substances 0.000 abstract description 2
- 238000005979 thermal decomposition reaction Methods 0.000 abstract description 2
- 238000005245 sintering Methods 0.000 abstract 1
- 238000002207 thermal evaporation Methods 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 30
- 238000005452 bending Methods 0.000 description 20
- 229910010271 silicon carbide Inorganic materials 0.000 description 14
- 239000012300 argon atmosphere Substances 0.000 description 7
- 238000007373 indentation Methods 0.000 description 7
- 238000000227 grinding Methods 0.000 description 4
- 238000011084 recovery Methods 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/0072—Heat treatment
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Ceramic Products (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、耐食性、耐摩耗
特性等を具備した構造部材等として用いられるＳｉＣ燒
結体に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a SiC sintered body used as a structural member having corrosion resistance, wear resistance and the like.
【０００２】[0002]
【従来の技術】セラミックス材料の一種であるＳｉＣ燒
結体は、優れた耐摩耗性、耐食性等を有し、例えば、構
造部材の一つである摺動部材として用いられている。Ｓ
ｉＣ燒結体は、型を用いて成形、焼成後に、摺動部材と
して要求される寸法精度や面精度を確保するために、ダ
イヤモンドや窒化ホウ素等の硬質材料の粉末を含む砥石
や砥粒を用いて、摺動面に研削やラッピング等の表面仕
上げ加工を施している。この表面仕上げに際しては、加
工疵をできるだけ小さくするために、粗研削、仕上げ研
削、超仕上げを順次行っているが、この場合でも摺動面
には、加工によって生じる疵やマイクロクラックのうち
の微細なものは残存しており、表層の組織は不明瞭な不
安定層と呼ばれるものに変質している。ところが、Ｓｉ
Ｃ燒結体は、破壊靭性値が小さいために、微細な疵やマ
イクロクラックであっても、その影響により脆性破壊し
易く、曲げ強度の低下をきたす問題がある。このため、
表面仕上げ加工後の表面にセラミックスをコーティング
したり、酸化雰囲気で熱処理して疵の表面に酸化皮膜を
形成したり、窒素やアルゴン雰囲気下で加熱して、表面
拡散によりクラックの先端を鈍化させたりすることによ
り、疵やマイクロクラックの影響を軽減することが行わ
れている。2. Description of the Related Art A sintered body of SiC, which is a kind of ceramic material, has excellent wear resistance, corrosion resistance, and the like, and is used, for example, as a sliding member as one of structural members. S
After molding and firing using a mold, the iC sintered body uses a grindstone or abrasive containing a powder of a hard material such as diamond or boron nitride in order to secure the dimensional accuracy and surface accuracy required for the sliding member. The sliding surface is subjected to surface finishing such as grinding and lapping. During this surface finishing, rough grinding, finish grinding, and superfinishing are sequentially performed in order to minimize the processing flaws. And the surface layer has been transformed into what is called an unclear unstable layer. However, Si
Since the C sintered body has a small fracture toughness value, even if it is a fine flaw or a micro crack, it is liable to be brittlely fractured due to its influence, resulting in a problem that the bending strength is lowered. For this reason,
Coating ceramics on the surface after surface finishing, heat treatment in an oxidizing atmosphere to form an oxide film on the surface of the flaw, or heating in a nitrogen or argon atmosphere to blunt the crack tip by surface diffusion By doing so, the effects of flaws and microcracks are reduced.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上記の
従来法においては、いずれの場合も比較的粗大な表面疵
による曲げ強度の低下は軽減できるものの、微細な疵や
マイクロクラックの影響を軽減することができないた
め、曲げ強度の改善が不十分である。このため、微細な
疵やマイクロクラックの影響をも軽減して、曲げ強度を
さらに向上させることが求められている。However, in the above-mentioned conventional methods, in any case, the reduction in bending strength due to relatively coarse surface flaws can be reduced, but the effect of fine flaws and microcracks is reduced. Therefore, the improvement of the bending strength is insufficient. For this reason, there is a demand for further reducing the influence of minute flaws and micro cracks and further improving the bending strength.
【０００４】上記のような従来の問題点に鑑み、この発
明は、研磨等によって形成された微細な疵やマイクロク
ラックによる曲げ強度の低下を防止できるＳｉＣ燒結体
を提供することを目的とする。[0004] In view of the above-mentioned conventional problems, an object of the present invention is to provide a SiC sintered body that can prevent a decrease in bending strength due to fine cracks or microcracks formed by polishing or the like.
【０００５】[0005]
【課題を解決するための手段】上記目的を達成するため
のこの発明のＳｉＣ燒結体は、所定部に研磨による表面
仕上げ加工を施したＳｉＣ燒結体であって、表面仕上げ
加工を施した後に、加熱温度を１０００℃以上とし、雰
囲気を真空とする熱処理を施して、仕上げ面に結晶粒界
を現出させたことを特徴とするものである。上記構成の
ＳｉＣ燒結体によれば、仕上げ面に残存する微細な疵や
マイクロクラックを含む不安定層を、結晶粒界が現出し
た組織に変化させることにより、当該疵やマイクロクラ
ックが燒結体の曲げ強度に悪影響を及ぼすのを抑制する
ことができる。すなわち、この発明は、所定面を研磨に
より仕上げたＳｉＣ燒結体を、真空下で、１０００℃以
上に加熱すると、仕上げ面の表層の不安定層において、
熱分解蒸発と、研磨によって切断されたＳｉ―Ｃの結合
鎖の再結合とが起こり、結晶粒界が現出した組織に変化
し、さらに、この組織変化に伴って、微細な疵やマイク
ロクラックが消失することを見出し、かかる知見に基づ
いて完成させたものである。A SiC sintered body according to the present invention for achieving the above object is a SiC sintered body in which a predetermined portion has been subjected to surface finishing by polishing. A heat treatment is performed at a heating temperature of 1000 ° C. or more and a vacuum is applied to the atmosphere to make crystal grain boundaries appear on the finished surface. According to the SiC sintered body having the above structure, the unstable layer containing microscopic flaws and microcracks remaining on the finished surface is changed into a structure in which crystal grain boundaries appear, whereby the flaws and microcracks are formed on the sintered body. Can be suppressed from adversely affecting the bending strength. That is, according to the present invention, when a SiC sintered body having a predetermined surface finished by polishing is heated to 1000 ° C. or more under vacuum, an unstable layer on the surface of the finished surface
Thermal decomposition evaporation and recombination of Si—C bond chains cut by polishing occur, and the structure changes to a structure in which crystal grain boundaries have appeared. Further, with this structure change, fine flaws and micro cracks are generated. Have been found to have disappeared and have been completed based on such findings.
【０００６】上記ＳｉＣ燒結体は、上記加熱温度が１３
００℃以上であるのがさらに好ましい（請求項２）。こ
のＳｉＣ燒結体によれば、疵やマイクロクラックが燒結
体の曲げ強度に悪影響を及ぼすのをさらに抑制すること
ができる。[0006] The SiC sintered body has a heating temperature of 13
More preferably, the temperature is at least 00 ° C. (claim 2). According to the SiC sintered body, it is possible to further suppress the flaws and micro cracks from adversely affecting the bending strength of the sintered body.
【０００７】[0007]
【実施例】以下この発明の実施例を詳述する。ただし、
この発明は、この実施例のみに限定されるものではな
い。この実施例に係るＳｉＣ燒結体は下記の製法を用い
て製造した。すなわち、平均粒径が０．７μｍのβ―Ｓ
ｉＣの粉末に、平均粒径０．５μｍのＢ４Ｃを０．４重
量％添加し、さらに、炭化処理後のカーボンとして２％
残存したフェノールレジン、および有機助材のポリエチ
レングリコール＃４０００を加え、メタノール溶媒で混
合した後、スプレードライヤーで乾燥造粒した。このよ
うにして得られた造粒粉を金型にとり、所定形状の板状
体に成形した後、これをアルゴンガス（大気圧）下で２
１５０℃に昇温して焼成を完了した。Embodiments of the present invention will be described below in detail. However,
The present invention is not limited to only this embodiment. The SiC sintered body according to this example was manufactured using the following manufacturing method. That is, β-S having an average particle size of 0.7 μm
0.4% by weight of B 4 C having an average particle size of 0.5 μm was added to the iC powder, and 2%
The remaining phenolic resin and polyethylene glycol # 4000 as an organic auxiliary were added, mixed with a methanol solvent, and dried and granulated with a spray drier. The granulated powder thus obtained is placed in a mold, formed into a plate having a predetermined shape, and then pressed under argon gas (atmospheric pressure).
The temperature was raised to 150 ° C. to complete the firing.
【０００８】[実施例１]実施例１として、上記板状体試
料を用い、表面を、研削およびラッピング仕上げによ
り、厚み３ｍｍ、幅４ｍｍ、長さ４０ｍｍの板状体を得
た。その後、ビッカ−ス硬度計を用いて、荷重５００ｇ
でダイヤモンド圧子による４０μｍの圧痕を付与し５０
μｍのヘアクラックを形成した。その後、１０−２Ｔｏ
ｒｒの真空下で１３００℃の温度に加熱し、１時間保持
する熱処理を施した。 [実施例２]実施例２として、熱処理温度を１５００℃と
した以外は、実施例１と同じ条件で処理し、実施例１と
同じサイズの板状体を得た。 [実施例３]実施例３として、熱処理温度を１６００℃と
した以外は、実施例１と同じ条件で処理し、実施例１と
同じサイズの板状体を得た。 [実施例４]実施例４として、熱処理温度を１８００℃と
した以外は、実施例１と同じ条件で処理し、実施例１と
同じサイズの板状体を得た。 [比較例１]比較例１として、表面を、研削およびラッピ
ング仕上げし、実施例１と同じサイズの板状体を得た。 [比較例２]比較例２として、表面を研削およびラッピン
グ仕上げし、ビッカ−ス硬度計を用いて、荷重５００ｇ
でダイヤモンド圧子による４０μｍの圧痕を付与して５
０μｍのヘアクラックを形成し、実施例１と同じサイズ
の板状体を得た。 [比較例３]比較例３として、熱処理温度を５００℃とし
た以外は、実施例１と同じ条件で処理し、実施例１と同
じサイズの板状体を得た。 [比較例４]比較例４として、熱処理温度を８００℃とし
た以外は、実施例１と同じ条件で処理し、実施例１と同
じサイズの板状体を得た。 [比較例５]比較例５として、熱処理温度を１０００℃と
した以外は、実施例１と同じ条件で処理し、実施例１と
同じサイズの板状体を得た。 [比較例６]比較例６として、熱処理雰囲気をアルゴン雰
囲気の大気圧とした以外は、比較例５と同じ条件で処理
し、実施例１と同じサイズの板状体を得た。 [比較例７]比較例７として、熱処理雰囲気をアルゴン雰
囲気の大気圧とした以外は、実施例１と同じ条件で処理
し、実施例１と同じサイズの板状体を得た。 [比較例８]比較例８として、熱処理雰囲気をアルゴン雰
囲気の大気圧とした以外は、実施例２と同じ条件で処理
し、実施例１と同じサイズの板状体を得た。 [比較例９]比較例９として、熱処理雰囲気をアルゴン雰
囲気の大気圧とした以外は、実施例３と同じ条件で処理
し、実施例１と同じサイズの板状体を得た。上記実施例
１〜４、比較例１〜９の各５本について曲げ試験、およ
び、圧痕部の光学顕微鏡観察を行った。Example 1 In Example 1, a plate having a thickness of 3 mm, a width of 4 mm, and a length of 40 mm was obtained by grinding and lapping the surface of the plate-shaped sample. Then, using a Vickers hardness tester, load 500g
To give a 40 μm indentation with a diamond indenter
A μm hair crack was formed. Then, 10 -2 To
Heat treatment was performed at a temperature of 1300 ° C. under a vacuum of rr and holding for 1 hour. [Example 2] In Example 2, a plate was processed under the same conditions as in Example 1 except that the heat treatment temperature was changed to 1500 ° C to obtain a plate-shaped body having the same size as that of Example 1. Example 3 In Example 3, a plate was processed under the same conditions as in Example 1 except that the heat treatment temperature was changed to 1600 ° C. to obtain a plate-shaped body having the same size as that of Example 1. Example 4 As Example 4, a plate was processed under the same conditions as in Example 1 except that the heat treatment temperature was changed to 1800 ° C., to obtain a plate having the same size as that of Example 1. Comparative Example 1 As Comparative Example 1, the surface was ground and lapped to obtain a plate-shaped body having the same size as that of Example 1. [Comparative Example 2] As Comparative Example 2, the surface was ground and lapped, and the load was 500 g using a Vickers hardness tester.
To give a 40 μm indentation with a diamond indenter
A 0 μm hair crack was formed, and a plate having the same size as in Example 1 was obtained. Comparative Example 3 As Comparative Example 3, a plate was processed under the same conditions as in Example 1 except that the heat treatment temperature was changed to 500 ° C. to obtain a plate-shaped body having the same size as that of Example 1. [Comparative Example 4] As Comparative Example 4, a plate was processed under the same conditions as in Example 1 except that the heat treatment temperature was changed to 800 ° C to obtain a plate-like body having the same size as that of Example 1. Comparative Example 5 As Comparative Example 5, a plate was processed under the same conditions as in Example 1 except that the heat treatment temperature was changed to 1000 ° C. to obtain a plate-like body having the same size as that of Example 1. Comparative Example 6 As Comparative Example 6, a plate having the same size as that of Example 1 was obtained by performing the same treatment as in Comparative Example 5 except that the heat treatment atmosphere was changed to the atmospheric pressure of an argon atmosphere. Comparative Example 7 As Comparative Example 7, a plate-like body having the same size as in Example 1 was obtained by performing the same treatment as in Example 1 except that the heat treatment atmosphere was changed to the atmospheric pressure of an argon atmosphere. Comparative Example 8 As Comparative Example 8, a plate having the same size as in Example 1 was obtained by performing the same treatment as in Example 2 except that the heat treatment atmosphere was changed to the atmospheric pressure of an argon atmosphere. [Comparative Example 9] As Comparative Example 9, a plate having the same size as that of Example 1 was obtained by performing the same treatment as in Example 3 except that the heat treatment atmosphere was changed to the atmospheric pressure of an argon atmosphere. The bending test and the optical microscope observation of the indentation were performed for each of the five Examples 1 to 4 and Comparative Examples 1 to 9.
【０００９】図１には、実施例１〜４、比較例１〜９に
ついて、曲げ試験によって求めた曲げ強度の測定結果を
示している。データ点は、各５本の平均値で表示してい
る。図１から明らかなように、１３００℃以上に加熱し
た実施例１〜４は、曲げ強度が圧痕を付与する前の曲げ
強度（比較例１）以上のレベルに向上していることが分
かる。一方、比較例２〜４では比較例１に比べ、若干の
曲げ強度の回復が認められるが、その回復の程度は小さ
いことが分かる。また、アルゴン雰囲気で熱処理した比
較例６〜９の場合も熱処理温度を上げているにもかかわ
らず曲げ強度の回復の程度は小さい。図２、図３は、実
施例および比較例の顕微鏡組織の特徴を５００倍に拡大
して模式的に示したものである。比較例１〜９では、中
央に示す圧痕１と、圧痕１のコーナーに生じた５０μｍ
の長さのヘアークラック２とが全てに確認されるが、実
施例１〜４では、圧痕１と、圧痕１のコーナーに生じ
た、同じく５０μｍの長さのヘアークラック２と、さら
に多数の結晶粒界３とが明瞭に全てに確認された。実施
例１〜４および比較例１〜９について、曲げ強度測定結
果と組織観察結果とをそれぞれ比較すると、加熱温度が
１３００℃未満の場合、ヘアクラックの鈍化によると推
測される曲げ強度の回復が確認される。曲げ強度の向上
は、比較例１と実施例１〜４と比較すると、加熱温度が
１３００℃を超える温度で起こり、また、比較例７〜９
と比較し、アルゴン雰囲気では組織変化も曲げ強度の向
上も認められないことから、結晶粒界を現出させる組織
変化が、微細表面疵やマイクロクラックを消失させる効
果を有していることが明らかである。FIG. 1 shows the measurement results of the bending strength obtained by the bending test for Examples 1 to 4 and Comparative Examples 1 to 9. The data points are represented by the average value of each of the five data points. As is clear from FIG. 1, it can be seen that Examples 1 to 4 heated to 1300 ° C. or higher have improved bending strength to a level higher than the bending strength before applying an indentation (Comparative Example 1). On the other hand, in Comparative Examples 2 to 4, although a slight recovery of the bending strength was observed as compared with Comparative Example 1, it can be seen that the degree of the recovery was small. Also, in the case of Comparative Examples 6 to 9 heat-treated in an argon atmosphere, the degree of the recovery of the bending strength is small even though the heat treatment temperature is raised. 2 and 3 schematically show the features of the microscopic structures of the examples and the comparative examples at a magnification of 500 times. In Comparative Examples 1 to 9, indentation 1 shown at the center and 50 μm
In Examples 1-4, indentations 1, hair cracks 2 having the same length of 50 μm that occurred at the corners of indentations 1, and a larger number of crystals were observed in Examples 1-4. Grain boundaries 3 were clearly observed in all. For Examples 1 to 4 and Comparative Examples 1 to 9, when the bending strength measurement result and the structure observation result are compared, when the heating temperature is lower than 1300 ° C, the recovery of the bending strength which is presumed to be due to the blunting of the hair crack is found. It is confirmed. The improvement of the bending strength occurs at a heating temperature exceeding 1300 ° C. as compared with Comparative Example 1 and Examples 1-4.
Compared to that in the argon atmosphere, no structural change or improvement in bending strength was observed, indicating that the structural change that manifests the crystal grain boundaries has the effect of eliminating fine surface defects and microcracks. It is.
【００１０】[0010]
【発明の効果】以上のように、請求項１記載のＳｉＣ燒
結体によれば、微細な疵やマイクロクラックを含む不安
定層を、結晶粒界が現出した組織に変化させることによ
り、曲げ強度を向上させることができるので、構造部材
として好適なものとなる。As described above, according to the SiC sintered body of the first aspect, the unstable layer containing fine flaws and micro cracks is bent by changing to a structure in which crystal grain boundaries appear. Since the strength can be improved, it is suitable as a structural member.
【００１１】請求項２記載のＳｉＣ燒結体によれば、曲
げ強度をさらに向上させることができるので、構造部材
としてさらに好適なものとなる。[0011] According to the SiC sintered body of the second aspect, the bending strength can be further improved, so that it is more suitable as a structural member.
【図１】この発明のＳｉＣ燒結体の曲げ強度測定結果を
示すグラフである。FIG. 1 is a graph showing the results of measuring the bending strength of a sintered SiC body of the present invention.
【図２】この発明の実施例の光学顕微鏡組織を示す模式
図である。FIG. 2 is a schematic view showing an optical microscope structure according to an example of the present invention.
【図３】比較例の光学顕微鏡組織を示す模式図である。FIG. 3 is a schematic diagram showing an optical microscope structure of a comparative example.
Claims (2)
たＳｉＣ燒結体であって、 表面仕上げ加工を施した後に、加熱温度を１０００℃以
上とし、雰囲気を真空とする熱処理を施して、仕上げ面
に結晶粒界を現出させたことを特徴とするＳｉＣ燒結
体。1. A SiC sintered body having a predetermined portion subjected to a surface finishing process by polishing, and after performing the surface finishing process, performing a heat treatment at a heating temperature of 1000 ° C. or more and an atmosphere in a vacuum to finish the surface. A SiC sintered body characterized in that a crystal grain boundary appears on the surface.
項１記載のＳｉＣ燒結体。2. The SiC sintered body according to claim 1, wherein said heating temperature is 1300 ° C. or higher.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25174799A JP2001080963A (en) | 1999-09-06 | 1999-09-06 | SiC SINTERED COMPACT |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25174799A JP2001080963A (en) | 1999-09-06 | 1999-09-06 | SiC SINTERED COMPACT |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001080963A true JP2001080963A (en) | 2001-03-27 |
Family
ID=17227335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25174799A Pending JP2001080963A (en) | 1999-09-06 | 1999-09-06 | SiC SINTERED COMPACT |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001080963A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014532030A (en) * | 2011-10-13 | 2014-12-04 | サン−ゴバン セラミック マテリアルズ アクスイェ セルスカプ | Manufacturing method of dense ceramic products based on SiC |
-
1999
- 1999-09-06 JP JP25174799A patent/JP2001080963A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014532030A (en) * | 2011-10-13 | 2014-12-04 | サン−ゴバン セラミック マテリアルズ アクスイェ セルスカプ | Manufacturing method of dense ceramic products based on SiC |
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