JP2001075504A - Electro-optical device, method of manufacturing electro-optical device, and electronic apparatus - Google Patents

Abstract

(57) Abstract: In an electro-optical device such as a liquid crystal device of an active matrix drive system, an adverse effect on a semiconductor film due to a light-shielding film for preventing reflected light is reduced, and stability and reliability are improved. A liquid crystal device includes a TFT array substrate (10).
The TFT (30), the data line (6a), and the scanning line (3
a), a capacitor line (3b) and a pixel electrode (9a).
Below the semiconductor film (1a) of the TFT (30), there is provided a first light-shielding film 11a for shielding reflected light, and above the scanning line 3a via a first interlayer insulating film. A second light shielding film (24) made of the same material as 11a is provided.
The semiconductor layer is sandwiched between these two light-shielding films to reduce the stress applied to the semiconductor layer (1a).

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The technical field of the present invention belongs to the technical field of an electro-optical device of an active matrix drive system and a method of manufacturing the same, and in particular, an electric device having a light shielding film for shielding light reflected on a semiconductor film. It belongs to an optical device and its manufacturing method. Further, the technical field of the present invention relates to an electronic apparatus having a light valve provided with such an electro-optical device.

[0002]

2. Description of the Related Art Conventionally, in an electro-optical device of an active matrix driving system by TFT driving, a large number of scanning lines and data lines arranged vertically and horizontally and a large number of TFTs corresponding to their intersections are provided on a TFT array substrate. It is provided above. When a scanning signal is supplied to the gate electrode of the TFT via a scanning line, the TFT is turned on, and an image signal supplied to the source region of the semiconductor layer via the data line is supplied to the source-drain of the TFT. It is supplied to the pixel electrode through the space. The supply of such an image signal
Only a very short time is carried out for each pixel electrode via each TFT. For this reason, a TFT that is turned on only for a very short time
In order to hold the voltage of the image signal supplied via the pixel electrode for a much longer time than the time when the pixel is turned on, a storage capacitor is formed in each pixel electrode in parallel with the liquid crystal capacitor. Is common.

In the case of a projection type display device using a light valve such as a liquid crystal panel, for example, it is known that a part of incident light returns to the liquid crystal panel as reflected light after passing through the liquid crystal panel. The reflected light generates a photocurrent in the semiconductor film of the thin film transistor, which has a problem of adversely affecting the characteristics of the switching element.

As a method of avoiding the influence of the reflected light on the semiconductor film, there is a method of providing a light-shielding film between the semiconductor film and the substrate. For example, Ti, Cr,
A simple substance, an alloy, or a silicide of an opaque metal such as W, Ta, Mo, or Pb is used.

[0005]

However, according to the knowledge obtained by the inventor, when the light shielding film is made of, for example, WSi (tungsten silicide) or the like, the semiconductor film of the thin film transistor is formed due to such a light shielding film. When a stress is applied, various characteristics such as an off-breakdown voltage of a thin film transistor are deteriorated by the stress, and there is a problem that display performance and reliability of the electro-optical device are reduced.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has as its object to provide an electro-optical device including a light-shielding film for blocking return light, a thin-film transistor having stable characteristics, and a method of manufacturing the same. And Another object of the present invention is to provide a highly reliable electro-optical device capable of displaying high-quality images and a method of manufacturing the same.

[0007]

In order to solve the above-mentioned problems, an electro-optical device according to the present invention comprises a substrate, a semiconductor film disposed above the substrate, and a semiconductor film disposed on a channel region of the semiconductor film. A switching element having a gate electrode, a first light-shielding film disposed on the substrate side of the semiconductor film so as to face the semiconductor film, and a switching element disposed above the gate electrode; A second light-shielding film disposed so as to face the channel region of the semiconductor film, wherein the first light-shielding film and the second light-shielding film reduce stress applied to the semiconductor film. It is arranged. By adopting such a configuration, in the electro-optical device of the present invention, the stress applied to the semiconductor layer can be reduced and reduced, the characteristics of the semiconductor element can be stabilized, and the reliability of the element and the electro-optical device can be improved. it can.

An electro-optical device according to the present invention is a switching element having a substrate, a semiconductor film provided above the substrate, and a gate electrode provided on a channel region of the semiconductor film; A first light-shielding film provided on a lower layer side of the film so as to face the semiconductor film; and a first light-shielding film provided on the gate electrode and provided so as to face at least the channel region of the semiconductor film. A second light shielding film,
Wherein the first light-shielding film and the second light-shielding film are made of substantially the same material. In the present invention,
Since the first light-shielding film and the second light-shielding film are substantially the same material, the stress generated in the semiconductor film due to the first light-shielding film and the stress generated in the semiconductor film due to the second light-shielding film are different. The offset cancels out the stress generated in the semiconductor film. This allows
The characteristics of the semiconductor element can be stabilized, and the reliability of the element and the electro-optical device can be improved.

An electro-optical device according to the present invention is a switching element having a substrate, a semiconductor film provided above the substrate, and a gate electrode provided on a channel region of the semiconductor film; A first light-shielding film provided on a lower layer side of the film so as to face the semiconductor film; and a first light-shielding film provided on the gate electrode and provided so as to face at least the channel region of the semiconductor film. A second light shielding film,
Wherein the first light-shielding film and the second light-shielding film are made of materials having the same thermal expansion coefficient. In the present invention, the first light-shielding film and the second light-shielding film are made of a material having the same coefficient of thermal expansion. The generated stress is offset, and the stress generated in the semiconductor film is reduced. Thereby, the characteristics of the semiconductor element can be stabilized, and the reliability of the element and the electro-optical device can be improved.

In the electro-optical device according to the aspect of the invention, the first light-shielding film or the second light-shielding film is made of a material having a larger thermal expansion coefficient than polysilicon. In the electro-optical device according to the aspect of the invention, the first light-shielding film or the second light-shielding film is made of a material having a larger coefficient of thermal expansion than a silicate glass film, a silicon nitride film, or a silicon oxide film.

As a material of such a light shielding film, Ti,
Metals such as Cr, W, Ta, Mo, and Pb, simple metals, alloys, and silicides containing at least one of them can be given.

In the electro-optical device according to the present invention, the second light-shielding film may be electrically connected to the gate electrode, or may be electrically independent via an insulating layer. You may.

That is, in the mode in which the second light-shielding film is connected to the gate electrode or the scanning line, the resistance of the gate electrode or the scanning line can be reduced by the second light-shielding film. Further, the gate electrode or the scanning line can be made redundant. The second light-shielding film may be formed directly on the gate electrode or the scanning line, or may include a first interlayer insulating film interposed between the gate electrode and the second light-shielding film, Electrical connection may be made through a through hole provided in the first interlayer insulating film.

In a mode in which the second light-shielding film and the capacitance line are electrically independent (not connected), the second light-shielding film can be used as an auxiliary capacitance electrode. As a result, a larger storage capacitor can be added to the unit pixel, and the display quality can be improved.

The second light-shielding film of the electro-optical device of the present invention is not a light-shielding film called a black mask or a black matrix formed on a counter substrate or the like, but is built on a substrate (usually a TFT array substrate). It is provided as a light-shielding film (that is, a conductive layer made of a light-shielding film). The configuration in which a part or the whole of the array substrate is provided has an extremely advantageous point that the pixel aperture ratio does not decrease due to the displacement between the substrate and the counter substrate in the manufacturing process.

According to this structure, the first light-shielding film provided on the side closer to the substrate than the thin film transistor, that is, below the thin film transistor allows return light and the like from the substrate side to pass through the channel region of the thin film transistor and an LDD (Lightly Doped Droop).
It is possible to prevent the incident on the ain) region beforehand, and to prevent the deterioration of the characteristics of the thin film transistor due to the generation of the photocurrent caused by the incident. Further, it is possible to define a part or the whole of the pixel opening region by the light shielding film. And, as described above, in the electro-optical device of the present invention,
The first light-shielding film and the second light-shielding film are provided so as to reduce stress applied to the semiconductor layer. This makes the first
As compared with a configuration employing only a light-shielding film, for example, stress applied to a semiconductor layer due to heat application or the like is reduced to a smaller extent. Therefore, characteristics of the thin film transistor such as the off-state breakdown voltage are stabilized, and the reliability can be improved.

In the aspect having such a light-shielding film, at least the first light-shielding film may be extended below the scanning line and connected to a constant potential source. With this configuration,
It is possible to prevent a situation in which the characteristics of the thin film transistor provided over the light-shielding film via the base insulating film due to the fluctuation of the potential of the light-shielding film are deteriorated.

Alternatively, in the aspect including the light-shielding film, the first light-shielding film is provided via a contact hole formed in a base insulating film interposed between the first light-shielding film and the semiconductor layer. It may be electrically connected to a capacitance line.

According to this structure, the potentials of the capacitance line and the light-shielding film can be made equal, and if one of the capacitance line and the light-shielding film is set to the predetermined potential, the other potential can be set to the predetermined potential. As a result, it is possible to reduce adverse effects due to potential fluctuations in the capacitance line and the light shielding film. Further, the wiring formed of the light-shielding film and the capacitance line can be made to function as a redundant wiring mutually.

According to the electro-optical device of the present invention, a substrate includes a plurality of scanning lines and a plurality of data lines, a thin film transistor connected to each of the scanning lines and each of the data lines, and a pixel electrode connected to the thin film transistor. A capacitor line for adding a storage capacitor to the pixel electrode; a semiconductor layer forming a source region and a drain region of the thin film transistor and a first storage capacitor electrode; an insulating thin film formed on the semiconductor layer; A gate electrode of the thin film transistor formed on the insulating thin film and including a part of the scanning line; a second storage capacitor electrode formed on the insulating thin film and including a part of the capacitor line; A first interlayer insulating film formed above the scanning line and the capacitor line;
A conductive layer formed above the interlayer insulating film; and a second interlayer insulating film formed above the conductive layer. The second interlayer insulating film is provided on the substrate side of the semiconductor film so as to face the semiconductor film. A first light-shielding film provided on the semiconductor substrate, and a first light-shielding film provided to cover the gate electrode with the first interlayer insulating film interposed therebetween, and provided so as to face at least the channel region of the semiconductor film. 2 light shielding films. As described above, the stress applied to the semiconductor film is reduced by the first light shielding film and the second light shielding film. By adopting such a configuration, in the electro-optical device of the present invention, the stress applied to the semiconductor layer can be reduced and reduced, the characteristics of the semiconductor element can be stabilized, and the reliability of the element and the electro-optical device can be improved. it can.

The method for manufacturing an electro-optical device according to the present invention is an example of a method for manufacturing the electro-optical device according to the present invention as described above.

According to the method of manufacturing an electro-optical device of the present invention, a step of forming a first light-shielding film on a substrate, a step of forming a base insulating film so as to cover the first light-shielding film, Forming a source layer, a channel region, and a drain region of the thin film transistor and a semiconductor layer serving as a first storage capacitor electrode of the storage capacitor so as to face the first light shielding film; Forming a thin film, forming the scanning line on the insulating thin film, and disposing a second light shielding film above the scanning line, wherein the first light shielding film and the second light shielding film The light shielding film is
It is provided so that the stress applied to the semiconductor film is reduced. In the method of manufacturing an electro-optical device according to the present invention, the first light-shielding film and the second light-shielding film are made of constituent materials such that the stress generated in the semiconductor film by the light-shielding film or another laminated film is reduced. Physical properties, film thickness, size, arrangement pattern and the like are adjusted. For example, in the aspect of the method of manufacturing an electro-optical device according to the present invention, the first light-shielding film and the second light-shielding film are made of substantially the same material. In the aspect of the method of manufacturing an electro-optical device according to the present invention, the first light-shielding film and the second light-shielding film are made of materials having the same coefficient of thermal expansion. In the aspect of the method of manufacturing an electro-optical device according to the present invention, the first light-shielding film or the second light-shielding film is made of a material having a larger thermal expansion coefficient than polysilicon. Further, in the aspect of the method of manufacturing an electro-optical device according to the present invention, the first light-shielding film or the second
The light-shielding film is made of a material having a larger coefficient of thermal expansion than a silicate glass film, a silicon nitride film, or a silicon oxide film.

According to another aspect of the method of manufacturing an electro-optical device of the present invention, a plurality of scanning lines, a plurality of data lines, a thin film transistor connected to each of the scanning lines and the data line, and a thin film transistor connected to the thin film transistor In a method for manufacturing an electro-optical device having a pixel electrode and a storage capacitor, a step of forming a first light-shielding film on a substrate, a step of forming a base insulating film so as to cover the first light-shielding film, Forming a source region, a channel region, and a drain region of the thin film transistor and a semiconductor layer serving as a first storage capacitor electrode of the storage capacitor so as to face the first light shielding film; Forming an insulating thin film on the insulating thin film; forming the scanning line on the insulating thin film; forming a first interlayer insulating film so as to cover the scanning line; It is intended to include a step of forming a second light-shielding film so as to cover the channel region of the semiconductor film even without. According to this aspect, the second light-shielding film and the capacitor line are formed electrically independently by the first interlayer insulating film,
The second light-shielding film can be used as an auxiliary capacitance electrode.

Another aspect of the method of manufacturing an electro-optical device according to the present invention includes a plurality of scanning lines, a plurality of data lines, a thin film transistor connected to each of the scanning lines and the data lines,
In a method for manufacturing an electro-optical device having a pixel electrode and a storage capacitor connected to the thin film transistor, another aspect of the method for manufacturing an electro-optical device according to the present invention includes a step of forming a first light-shielding film on a substrate; Forming a base insulating film so as to cover the first light shielding film; and forming a source region, a channel region, a drain region, and a storage region of the thin film transistor on the base insulating film so as to face the first light shielding film. Forming a semiconductor layer serving as a first storage capacitor electrode of a capacitor, forming an insulating thin film on the semiconductor layer, forming the scanning line on the insulating thin film, and covering the scanning line. Forming a first interlayer insulating film, forming a contact hole in the first interlayer insulating film on the scanning line, and connecting to the scanning line via the contact hole. It is intended to include a step of forming a second light-shielding layer on the first interlayer insulating film on so that. According to this aspect, since the second light shielding film is connected to the gate electrode or the scanning line via the contact hole, the resistance of the gate electrode or the scanning line can be reduced by the second light shielding film. Further, the gate electrode or the scanning line can be made redundant, and the productivity and reliability of the electro-optical device can be improved.

According to another aspect of the method of manufacturing an electro-optical device of the present invention, a plurality of scanning lines, a plurality of data lines, a thin film transistor connected to each of the scanning lines and the data line, and a thin film transistor connected to the thin film transistor In a method for manufacturing an electro-optical device having a pixel electrode and a storage capacitor, a step of forming a first light-shielding film on a substrate, a step of forming a base insulating film so as to cover the first light-shielding film, Forming a source region, a channel region, and a drain region of the thin film transistor and a semiconductor layer serving as a first storage capacitor electrode of the storage capacitor so as to face the first light shielding film; Forming an insulating thin film on the insulating thin film, forming the scanning line and the capacitor line on the insulating thin film, respectively, and forming a first interlayer insulating film so as to cover the first light shielding film and the capacitor line. Forming a first contact hole in the insulating thin film and the first interlayer insulating film on the drain region, and forming a third contact hole in the first interlayer insulating film on the gate electrode. Forming, forming a conductive layer on the first interlayer insulating film so as to connect to the semiconductor layer via the first contact hole, and connecting to the gate electrode via the third contact hole Forming a second light-shielding film on the first interlayer insulating film.

According to another aspect of the method of manufacturing an electro-optical device of the present invention, a step of forming a second interlayer insulating film on the conductive layer and the second light-shielding film; Forming a line, forming a third interlayer insulating film on the data line, opening the second contact hole in the second and third interlayer insulating films, and forming the second contact hole. Forming a pixel electrode so that the pixel electrode is connected to the conductive layer via the first electrode. According to this aspect, an electro-optical device in which a light-shielding film is provided below a thin film transistor can be manufactured with a relatively small number of steps and using relatively simple steps.

An electronic apparatus according to the present invention includes a light valve having the electro-optical device according to the present invention as described above or an electro-optical device manufactured by the method for manufacturing an electro-optical device, a light source, and an optical system for projecting incident light. Between the two. The light from the light source is modulated by a light valve, guided to the projection optical system, and projected on, for example, a screen. The electro-optical device of the present invention can prevent a reflected light from adversely affecting a thin film transistor, and can project a high-quality image because the characteristics of the thin film transistor are stable and the reliability is high.

[0028]

Embodiments of the present invention will be described below with reference to the drawings.

(First Embodiment of Electro-Optical Device) The configuration of a liquid crystal device which is a first embodiment of the electro-optical device according to the present invention will be described with reference to FIGS. FIG.
FIG. 2 shows an equivalent circuit of various elements, wiring, and the like in a plurality of pixels formed in a matrix forming an image display area of a liquid crystal device. FIG. 2 shows a data line, a scanning line, a pixel electrode, a light-shielding film, and the like. FIG. 3 is a plan view of a plurality of pixel groups adjacent to each other on the TFT array substrate, and FIG. 3 is a sectional view taken along line AA ′ of FIG. In FIG. 3, the scale of each layer and each member is different so that each layer and each member have a size that can be recognized in the drawing.

In FIG. 1, a plurality of pixels arranged in a matrix forming an image display area of a liquid crystal device according to the present embodiment have TFTs for controlling a pixel electrode 9a.
The data line 6a to which an image signal is supplied is electrically connected to the source of the TFT 30. Image signals S1 and S written to data line 6a
2,..., Sn may be supplied line-sequentially in this order, or may be supplied to a plurality of adjacent data lines 6a for each group. Also, the TFT 30
The scanning line 3a is electrically connected to the gate of the scanning line 3a, and the scanning signal G is pulsed to the scanning line 3a at a predetermined timing.
, Gm are applied line-sequentially in this order. The pixel electrode 9a is electrically connected to the drain of the TFT 30, and by closing the switch of the TFT 30 as a switching element for a certain period, the image signals S1 and S1 supplied from the data line 6a.
2, ..., Sn are written at a predetermined timing. The image signals S1, S2,..., Sn of a predetermined level written in the liquid crystal via the pixel electrodes 9a are held for a certain period between the counter electrodes (described later) formed on the counter substrate (described later). . The liquid crystal modulates light by changing the orientation and order of the molecular assembly according to the applied voltage level, thereby enabling gray scale display. Here, in order to prevent the held image signal from leaking, a storage capacitor 70 is added in parallel with a liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode.

In FIG. 2, a plurality of transparent pixel electrodes 9a are arranged in a matrix on a TFT array substrate of a liquid crystal device.
(The outline is indicated by a dotted line portion 9a ′), and the data line 6a, the scanning line 3a, and the capacitor line 3b are provided along the vertical and horizontal boundaries of the pixel electrode 9a.
The data line 6a is electrically connected to a source region described later in the semiconductor layer 1a made of a polysilicon film or the like via the contact hole 5, and the pixel electrode 9a is connected to a region shown by oblique lines rising to the right in the figure. The conductive layer 80 (hereinafter, referred to as a barrier layer), which is formed and functions as a buffer, is connected to a drain region of the semiconductor layer 1a via a first contact hole 8a and a second contact hole 8b. Electrically connected. In addition, the scanning line 3a is arranged so as to face the channel region 1a '(the hatched region downward in the figure) of the semiconductor layer 1a.
a functions as a gate electrode. Thus, scanning line 3
The TFT 30 is provided at each intersection of the data line 6a with the scanning line 3a facing the channel region 1a 'as a gate electrode.

The capacitance line 3b has a main line portion extending substantially linearly along the scanning line 3a, and a protruding portion protruding forward (upward in the drawing) along the data line 6a from a point intersecting the data line 6a. And

A first light-shielding film 11a is provided in a region indicated by a thick line in the drawing so as to pass below the scanning line 3a, the capacitor line 3b and the TFT 30, respectively. More specifically, in FIG. 2, the first light-shielding films 11a
Are formed in a striped shape along with the data line 6a, and a portion intersecting with the data line 6a is formed wide downward in the figure, and the channel portion 1a 'of each TFT is formed by the wide portion.
It is provided at a position to cover each as viewed from the T array substrate side.

In this embodiment, the first light shielding film 11a
In addition, a second light-shielding film 24 made of the same material as the first light-shielding film 11a is provided so as to cover at least the channel region 1a 'of the semiconductor film from above the first interlayer insulating film 81 (see FIG. 3). ). In this example, the first light-shielding film 11a and the second
Each of the light shielding films 24 is made of tungsten silicide. The second light-shielding film 24 is electrically connected to the scanning line (gate electrode) 3a via a contact hole formed in the first interlayer insulating film.
It is patterned so as to be electrically independent from the data line 6a.

Next, as shown in the cross-sectional view of FIG. 3, the liquid crystal device comprises a TFT array substrate 10 which constitutes an example of one transparent substrate, and an example of another transparent substrate which is disposed to face the TFT array substrate. And the opposing substrate 20. The TFT array substrate 10 is made of, for example, a quartz substrate, and has a counter substrate 20.
Is made of, for example, a glass substrate or a quartz substrate. The pixel electrode 9a is provided on the TFT array substrate 10, and an alignment film 16 on which a predetermined alignment process such as a rubbing process is performed is provided above the pixel electrode 9a. The pixel electrode 9a is, for example,
It is composed of a transparent conductive thin film such as an ITO (Indium Tin Oxide) film. The alignment film 16 is made of, for example, an organic thin film such as a polyimide thin film.

On the other hand, a counter electrode (common electrode) 21 is provided on the entire surface of the counter substrate 20, and an alignment film 22 on which a predetermined alignment process such as a rubbing process is performed is provided below the counter electrode. Is provided. The counter electrode 21 is, for example, I
It is made of a transparent conductive thin film such as a TO film. Also, the alignment film 22
Consists of an organic thin film such as a polyimide thin film.

Each pixel electrode 9 is provided on the TFT array substrate 10.
A pixel switching TFT 30 that controls switching of each pixel electrode 9a is provided at a position adjacent to the pixel electrode 9a.

As shown in FIG. 3, a third light-shielding film 23 called a black mask or a black matrix may be provided in the non-opening area of each pixel in the counter substrate 20. For this reason, incident light from the side of the counter substrate 20 is applied to the channel region 1 of the semiconductor layer 1 a of the pixel switching TFT 30.
a 'and the source side LDD region 1b and the drain side LDD region 1c do not enter. Further, the third light shielding film 23
Has functions of improving contrast, preventing color mixture of color materials when a color filter is formed, and the like.

The sealing member (see FIG. 10) described later surrounds the space between the TFT array substrate 10 and the opposing substrate 20, which are arranged so that the pixel electrode 9a and the opposing electrode 21 face each other. A liquid crystal, which is an example of an electro-optical material, is sealed in the space provided, and a liquid crystal layer 50 is formed. The liquid crystal layer 50 is made of, for example, a liquid crystal in which one or several kinds of nematic liquid crystals are mixed.

Further, as shown in FIG. 3, a first light-shielding film 11a is provided between the TFT array substrate 10 and each pixel switching TFT 30 at a position facing each of the pixel switching TFTs 30. First light shielding film 1
1a, the second light-shielding film 24 is preferably made of a simple metal, an alloy, a metal silicide, or the like containing at least one of Ti, Cr, W, Ta, Mo, and Pb, which are preferably opaque refractory metals. . If constructed from such materials,
The high temperature treatment in the step of forming the pixel switching TFT 30 performed after the step of forming the first light-shielding film 11a on the TFT array substrate 10 can prevent the first light-shielding film 11a from being broken or melted. Since the first light shielding film 11a is formed, the channel region 1a 'of the pixel switching TFT 30 or the source side L of the pixel switching TFT 30 in which reflected light (return light) from the side of the TFT array substrate 10 is easily excited by light.
The incident on the DD region 1b and the drain-side LDD 1c can be prevented beforehand, and the characteristics of the pixel switching TFT 30 do not deteriorate due to the generation of the photocurrent due to this.

Further, a base insulating film 12 is provided between the first light shielding film 11a and the plurality of pixel switching TFTs 30. The base insulating film 12 is formed by forming the semiconductor layer 1a constituting the pixel switching TFT 30 into a first light shielding film 11a.
It is provided for electrical insulation from Further, the base insulating film 12 is formed on the entire surface of the TFT array substrate 10 so that the pixel switching TFT 30 is formed.
It also has a function as a base film for the purpose. That is, TFT
It has a function of preventing deterioration of the characteristics of the pixel switching TFT 30 due to roughening of the surface of the array substrate 10 during polishing, dirt remaining after cleaning, and the like. The base insulating film 12 is made of, for example, a highly insulating glass such as NSG (non-doped silicate glass), a silicon oxide film, a silicon nitride film, or the like. The base insulating film 12 can prevent the first light-shielding film 11a from contaminating the pixel switching TFT 30 and the like.

In the liquid crystal device of the present embodiment, in addition to the first light-shielding film 11a, the second light-shielding film 24 made of the same material as the first light-shielding film 11a is provided on at least the semiconductor film from above the first interlayer insulating film 81. It is provided so as to cover the channel region 1a '(see FIG. 2). In this example, the first light shielding film 11
a and the second light shielding film 24 are both made of the same material (for example, tungsten silicide). Also the second
The light shielding film 24 is electrically connected to the scanning line 3a via a contact hole formed in the first interlayer insulating film.
The barrier layer 80 and the data line 6a are patterned so as to be electrically independent. The first light-shielding film 11a and the second light-shielding film 24 are formed of the semiconductor film 1a, in particular, the channel region 1.
The arrangement is such that the stress applied to a ′ is reduced. By employing such a configuration, in the electro-optical device of the present invention, the stress applied to the semiconductor layer can be suppressed and reduced to a small extent, the characteristics of the semiconductor element can be stabilized, and the reliability of the liquid crystal device can be improved. Further, in this example, the second light-shielding film 24 also has a function of lowering the resistance of the scanning line 3a and a function of making the scanning line redundant, thereby improving the reliability of the liquid crystal device.
Productivity can be improved.

In this embodiment, the semiconductor layer 1a extends from the high-concentration drain region 1e to form the first storage capacitor electrode 1f.
And a part of the capacitance line 3b opposed thereto is used as a second storage capacitance electrode, and the gate insulating film 2 is extended from a position opposed to the scanning line 3a, and the first dielectric film sandwiched between these electrodes is formed. By doing so, the first storage capacitor 70a is configured. Further, the barrier layer 8 facing the second storage capacitor electrode
A part of 0 is a third storage capacitor electrode 80b, and a first interlayer insulating film 81 is provided between these electrodes. First interlayer insulating film 81
Functions also as a second dielectric film, and a second storage capacitor 70b is formed. The first and second storage capacitors 70a and 70b are connected in parallel via the first contact hole 8a to form the storage capacitor 70. In this example, the barrier layer 80 is formed separately from the second light shielding film 24,
Although the constituent materials are different, the barrier layer 80 and the second light-shielding film 24 are simultaneously formed and patterned from an opaque conductor material having substantially the same physical property value (for example, thermal expansion coefficient) as the first light-shielding film. You may do so.

In FIG. 3, the pixel switching TFT
Reference numeral 30 denotes a scanning line 3a, a channel region 1a 'of the semiconductor layer 1a in which a channel is formed by an electric field from the scanning line 3a, a scanning line 3a and the semiconductor layer 1.
a, a low concentration source region (source-side LDD region) 1b of the semiconductor layer 1a.
And low concentration drain region (drain side LDD region) 1
c, a high-concentration source region 1d and a high-concentration drain region 1e of the semiconductor layer 1a. High concentration drain region 1
To e, a corresponding one of the plurality of pixel electrodes 9a is connected via the barrier layer 80. In the present embodiment, in particular, the data line 6a is formed of a light-shielding and conductive thin film such as a low-resistance metal film such as Al or an alloy film such as metal silicide. The high concentration source region 1 is formed on the barrier layer 80 and the second dielectric film (first interlayer insulating film) 81.
A second interlayer insulating film 4 in which a contact hole 5 leading to d and a contact hole 8b leading to the barrier layer 80 are respectively formed is formed. The data line 6a is electrically connected to the high-concentration source region 1d via the contact hole 5 to the high-concentration source region 1d. Further, a third interlayer insulating film 7 in which a contact hole 8b to the barrier layer 80 is formed is formed on the data line 6a and the second interlayer insulating film 4. Through this contact hole 8b,
The pixel electrode 9a is electrically connected to the barrier layer 80,
Further, it is electrically connected to the high-concentration drain region 1e via the contact hole 8a via the barrier layer 80.
The above-described pixel electrode 9a is provided on the upper surface of the third interlayer insulating film 7 configured as described above.

The pixel switching TFT 30 preferably has the LDD structure as described above, but may have an offset structure in which impurity ions are not implanted into the low-concentration source region 1b and the low-concentration drain region 1c. A self-aligned TFT in which impurity ions are implanted at a high concentration using 3a as a mask to form high-concentration source and drain regions in a self-aligned manner may be used.

(Manufacturing Process in First Embodiment of Electro-Optical Device) Next, a manufacturing process of the liquid crystal device in the embodiment having the above-described configuration will be described with reference to FIGS.
This will be described with reference to FIG. FIGS. 4 to 7 show each layer on the TFT array substrate side in each step, as in FIG.
It is a process drawing shown corresponding to -A 'cross section.

First, as shown in step (1) of FIG. 4, a TFT array substrate 10 such as a quartz substrate, hard glass, or silicon substrate is prepared. Here, annealing is preferably performed in an inert gas atmosphere such as N ₂ (nitrogen) and at a high temperature of about 900 to 1300 ° C., and a pre-treatment is performed so that distortion generated in the TFT array substrate 10 in a high-temperature process performed later is reduced. Keep it. That is, the TFT array substrate 10 is preliminarily heat-treated at the same temperature or higher in accordance with the highest processing temperature at the highest temperature in the manufacturing process.
Then, a metal such as Ti, Cr, W, Ta, Mo and Pb or a metal alloy film such as metal silicide is formed on the entire surface of the TFT array substrate 10 thus processed by sputtering to a thickness of about 100 to 500 nm. , Preferably about 2
A light-shielding film 11 having a thickness of 00 nm is formed. The light shielding film 1
An anti-reflection film such as a polysilicon film may be formed on the substrate 1 to reduce surface reflection.

Next, as shown in step (2), a resist mask corresponding to the pattern of the first light-shielding film 11a (see FIG. 2) is formed on the formed light-shielding film 11 by photolithography. The first light-shielding film 11a is formed by etching the light-shielding film 11 through the step.

Next, as shown in step (3), TEOS (tetra-ethyl-ortho-silicate) gas, TEB (tetra-ethyl) is formed on the first light-shielding film 11a by, for example, normal pressure or reduced pressure CVD.・ Boat rate) Gas, T
The underlying insulating film 12 made of a silicate glass film such as NSG, PSG, BSG, or BPSG, a silicon nitride film, a silicon oxide film, or the like is formed using MOP (tetramethyl oxyphosphate) gas or the like. The thickness of the base insulating film 12 is, for example, about 500 to 2000 nm.

Next, as shown in step (4), a temperature of about 450 to 550 ° C., preferably about 500
Flow rate of about 400 to 600 cc /
An amorphous silicon film is formed by low-pressure CVD (for example, CVD at a pressure of about 20 to 40 Pa) using a monosilane gas, a disilane gas, or the like for min. Thereafter, in a nitrogen atmosphere at about 600 to 700 ° C. for about 1 to 10 hours,
Preferably, the polysilicon film 1 is formed to a thickness of about 50 to 200 nm by performing an annealing process for 4 to 6 hours.
Preferably, the solid phase is grown to a thickness of about 100 nm. As a method for solid phase growth, RTA (Rapid Ther
(Mal Anneal) or laser annealing using an excimer laser or the like.

At this time, when an n-channel type pixel switching TFT 30 is formed as the pixel switching TFT 30 shown in FIG.
V such as b (antimony), As (arsenic), and P (phosphorus)
A group element dopant may be slightly doped by ion implantation or the like. Also, the pixel switching TFT 30 is set to p
In the case of a channel type, a dopant of a group III element such as B (boron), Ga (gallium), or In (indium) may be slightly doped by ion implantation or the like.
The polysilicon film 1 may be directly formed by a low pressure CVD method or the like without passing through the amorphous silicon film. Alternatively, the polysilicon film 1 may be formed by implanting silicon ions into a polysilicon film deposited by a low-pressure CVD method or the like to make the polysilicon film once amorphous (amorphized), and then recrystallize by annealing or the like.

Next, as shown in a step (5), a semiconductor layer 1a having a predetermined pattern including the first storage capacitor electrode 1f as shown in FIG. 2 is formed by a photolithography step, an etching step and the like.

Next, as shown in the step (6), the first layer together with the semiconductor layer 1a constituting the pixel switching TFT 30 is formed.
By thermally oxidizing the storage capacitor electrode 1f at a temperature of about 900 to 1300 ° C., preferably at a temperature of about 1000 ° C., a relatively thin thermally oxidized silicon film 2 of about 30 nm is formed.
a, and then, as shown in step (7),
An insulating film 2b made of a high-temperature silicon oxide film (HTO film) or a silicon nitride film is deposited to a relatively thin thickness of about 50 nm by a method or the like, and a pixel switching having a multilayer structure including the thermal silicon oxide film 2a and the insulating film 2b The first dielectric film 2 for forming a storage capacitor is formed simultaneously with the gate insulating film 2 of the TFT 30 for use. As a result, the first storage capacitor electrode 1f has a thickness of about 30 to 150 nm, preferably about 35 to 5 nm.
The thickness becomes 0 nm, and the gate insulating film 2 (first dielectric film)
Has a thickness of about 20 to 150 nm, preferably about 3 nm.
The thickness is 0 to 100 nm. By shortening the high-temperature thermal oxidation time in this way, warpage due to heat can be prevented particularly when a large substrate of about 8 inches is used. However, the gate insulating film 2 having a single-layer structure may be formed only by thermally oxidizing the polysilicon film 1.

Next, as shown in a step (8), a resist layer 50 is formed by a photolithography step, an etching step and the like.
0 is the semiconductor layer 1 excluding the portion serving as the first storage capacitor electrode 1f
After forming on P.a, for example, P ions are dosed at about 3 × 1
The resistance of the first storage capacitor electrode 1f may be reduced by doping at 0 ¹² / cm ² .

Next, as shown in step (9), after the resist layer 500 is removed, a polysilicon film 3 is deposited by a low pressure CVD method or the like, and phosphorus (P) is thermally diffused to form the polysilicon film 3. It becomes conductive. Alternatively, a doped silicon film in which P ions are introduced simultaneously with the formation of the polysilicon film 3 may be used. The thickness of the polysilicon film 3 is about 100 to 50.
Deposit to a thickness of 0 nm, preferably about 300 nm.

Next, as shown in a step (10) of FIG. 5, by a photolithography step using a resist mask, an etching step, and the like, a predetermined pattern of the scanning lines 3a and the capacitance lines 3b as shown in FIG. 2 are formed. . The scanning line 3a and the capacitance line 3b may be formed of a metal alloy film such as a high melting point metal or a metal silicide, or may be a multilayer wiring combined with a polysilicon film or the like.

Next, as shown in step (11), when the pixel switching TFT 30 shown in FIG. 3 is an n-channel type TFT having an LDD structure, the semiconductor layer 1a first includes the low-concentration source region 1b and the low-concentration source region 1b. In order to form the concentration drain region 1c, a dopant of a group V element such as P is used at a low concentration (for example, P ions are doped at a dose of 1 to 3 × 10 ¹³ / cm ² ) using the scanning line 3a (gate electrode) as a mask. Dope in amount). Thereby, the semiconductor layer 1 under the scanning line 3a
a becomes the channel region 1a '. The resistance of the capacitance line 3b and the scanning line 3a is also reduced by the doping of the impurity.

Next, as shown in step (12), the high concentration source region 1d constituting the pixel switching TFT 30
After forming the resist layer 600 on the scanning line 3a with a mask wider than the scanning line 3a in order to form the high-concentration drain region 1e, a dopant of a group V element such as P is also added at a high concentration (for example, , P ions from 1 to 3 × 10 ¹⁵
/ Cm ² (dose amount). When the pixel switching TFT 30 is of a p-channel type, B or the like is used to form the low-concentration source region 1b and the low-concentration drain region 1c and the high-concentration source region 1d and the high-concentration drain region 1e in the semiconductor layer 1a. Using a Group III element dopant. Note that, for example, a TFT having an offset structure may be used without doping at a low concentration, and a self-aligned TF may be formed by an ion implantation technique using P ions, B ions, or the like using the scanning line 3a as a mask.
It may be T. The capacitance line 3b is formed by doping this impurity.
Further, the resistance of the scanning line 3a is further reduced.

Incidentally, in parallel with the element forming process of the TFT 30, an n-channel TFT and a p-channel TFT
Peripheral circuits such as a data line driving circuit and a scanning line driving circuit having a complementary structure composed of the TFT array substrate may be formed in the peripheral portion on the TFT array substrate 10. As described above, if the semiconductor layer 1a constituting the pixel switching TFT 30 in this embodiment is formed of polysilicon, the peripheral circuit can be formed in substantially the same process when the pixel switching TFT 30 is formed, which is advantageous in manufacturing. It is.

Next, as shown in a step (13), after the resist layer 600 is removed, a low pressure CVD is performed on the capacitance line 3b, the scanning line 3a, and the gate insulating film 2 (first dielectric film).
High-temperature silicon oxide film (H
TO film) or a first interlayer insulating film 81 made of a silicon nitride film
Is deposited to a relatively thin thickness of 10 nm or more and 200 nm or less. However, as described above, the first interlayer insulating film 81 may be composed of a multilayer film, or may be formed by various known techniques generally used for forming a gate insulating film of a TFT. Can be formed. First interlayer insulating film 8
In the case of 1, if the thickness is too small as in the case of the second interlayer insulating film 4, the parasitic capacitance between the data line 6a and the scanning line 3a does not increase, and also, as in the case of the gate insulating film 2 in the TFT 30, If it is made too thin, no unique phenomenon such as a tunnel effect will occur. In addition, the first interlayer insulating film 81 functions as a second dielectric film between the second storage capacitor electrode 3b and the barrier layer 80. Then, as the second dielectric film 81 is made thinner, the second storage capacitor 70b becomes larger. As a result, a thickness of 50 nm or less, which is thinner than the gate insulating film 2, is set on condition that defects such as film breakage do not occur. When the second dielectric film 81 is formed so as to have an extremely thin insulating film, the effect of the present embodiment can be increased.

Next, as shown in step (14), the contact hole 8a for electrically connecting the barrier layer 80 and the high-concentration drain region 1e, the second light-shielding film 24 and the scanning line 3 are formed.
A contact hole 8c for connecting to a is formed by dry etching such as reactive ion etching or reactive ion beam etching. Since such dry etching has high directivity, the contact holes 8a and 8c having a small diameter can be formed. Alternatively, wet etching which is advantageous for preventing the contact hole 8a from penetrating through the semiconductor layer 1a may be used together. This wet etching is performed in the contact hole 8a.
On the other hand, it is also effective from the viewpoint of providing a taper for obtaining better contact.

Next, as shown in step (15), Ti, Cr, W, Ta, and Ti are formed on the entire surface of the high-concentration drain region 1e viewed through the first interlayer insulating film 81 and the contact hole 8a.
A metal such as Mo and Pb or a metal alloy film such as a metal silicide is deposited by sputtering to form a conductive film 80 'having a thickness of about 50 to 500 nm. If the thickness is about 50 nm, there is almost no possibility that the second contact hole 8b will be penetrated when the second contact hole 8b is later formed. The conductive film 80 '
An anti-reflection film such as a polysilicon film may be formed thereon to reduce surface reflection. The conductive film 80 'may be a doped polysilicon film or the like for stress relaxation.

Next, as shown in a step (16) of FIG. 6, the pattern corresponding to the pattern of the barrier layer 80 (see FIG. 2) is formed on the formed conductive film 80 'by photolithography and connected to the scanning line 3a. A resist mask corresponding to the second light-shielding film 24 to be formed is formed, and the conductive film 80 'is etched through the resist mask, thereby forming the barrier layer 80 including the third storage capacitor electrode 80a and the second light-shielding film. 2
4 is formed.

At the same time, in this case, the second light shielding film 24
Is formed using the same material as the first light-shielding film 11a,
Particularly effective for stress relaxation.

Thereafter, the first interlayer insulating film 81 and the second
For example, by using a normal pressure or low pressure CVD method, a TEOS gas, or the like, the NS is applied so as to cover the light shielding film 24 and the barrier layer 80.
A second interlayer insulating film 4 made of a silicate glass film such as G, PSG (phosphorus silicate glass), BSG (boron silicate glass), BPSG (boron phosphorus silicate glass), a silicon nitride film, a silicon oxide film, or the like is formed. The thickness of the second interlayer insulating film 4 is about 500 to 1500 n
m is preferred. If the thickness of the second interlayer insulating film 4 is 500 nm or more, the parasitic capacitance between the data line 6a and the scanning line 3a causes little or no problem.

Next, in the step (17), an annealing process at about 1000 ° C. is performed for about 20 minutes to activate the high-concentration source region 1d and the high-concentration drain region 1e.
A contact hole 5 for the data line 6a is opened.
Also, contact holes for connecting the scanning lines 3a and the capacitance lines 3b to wirings (not shown) in the peripheral region of the substrate are provided.
The second interlayer insulating film 4 can be opened by the same process as the contact hole 5.

Then, as shown in step (18), a low-resistance metal such as Al or a metal silicide having a light-shielding property is formed on the second interlayer insulating ~ 500 nm thickness, preferably about 300
nm.

Next, as shown in a step (19), the data lines 6 are formed by a photolithography step, an etching step and the like.
a is formed.

Next, as shown in step (20) of FIG. 7, for example, normal pressure or reduced pressure CV is applied so as to cover the data line 6a.
NSG, PSG, BS using D method or TEOS gas
A third interlayer insulating film 7 made of a silicate glass film such as G or BPSG, a silicon nitride film, a silicon oxide film, or the like is formed. The thickness of the third interlayer insulating film 7 is about 500 to 1500
nm is preferred.

Next, as shown in step (21), a contact hole 8b for electrically connecting the pixel electrode 9a and the barrier layer 80 is formed by dry etching such as reactive ion etching or reactive ion beam etching. I do. Further, wet etching may be used to form a tapered shape.

Next, as shown in step (22), a transparent conductive thin film 9 such as an ITO film is deposited on the third interlayer insulating film 7 by sputtering or the like to a thickness of about 50 to 200 nm. Then, as shown in the step (23), the pixel electrode 9a is formed by a photolithography step, an etching step and the like. When the liquid crystal device is used for a reflection type liquid crystal device, the pixel electrode 9a may be formed from an opaque material having a high reflectance such as Al.

Subsequently, after applying a coating liquid for a polyimide-based alignment film on the pixel electrode 9a, a rubbing process is performed so as to have a predetermined pretilt angle and in a predetermined direction. 3) is formed.

On the other hand, for the counter substrate 20 shown in FIG. 3, a glass substrate or the like is first prepared, and the third light shielding film 23 and the third light shielding film as a frame (see FIGS. 10 and 11) are provided.
For example, it is formed through a photolithography process and an etching process after sputtering metal chromium. The second and third light-shielding films may be formed of a material such as resin black in which carbon or Ti is dispersed in a photoresist, in addition to a metal material such as Cr, Ni, or Al. TF
On the T array substrate 10, the data line 6a, the barrier layer 80,
If the light shielding region is defined by the first light shielding film 11a, the second light shielding film 24, and the like, the third light shielding film 23 on the counter substrate 20 can be omitted.

Thereafter, a transparent conductive thin film such as ITO is applied to the entire surface of the counter substrate 20 by sputtering or the like for about 50 to 20 minutes.
The counter electrode 21 is formed by depositing it to a thickness of 0 nm. Furthermore, after applying a coating liquid for a polyimide-based alignment film to the entire surface of the counter electrode 21, a rubbing process is performed so as to have a predetermined pretilt angle and in a predetermined direction, so that the alignment film 22 (see FIG. 3) is formed. It is formed.

Finally, the T on which each layer is formed as described above
The FT array substrate 10 and the counter substrate 20 are bonded together with a sealing material (see FIGS. 9 and 10) so that the alignment films 16 and 22 face each other. The liquid crystal formed by mixing the above nematic liquid crystals is sucked to form a liquid crystal layer 50 having a predetermined thickness.

In the above-described embodiment, the scanning line 3a and the barrier layer 80 are simultaneously formed and patterned with the same film, so that the storage capacitor can be added in a small number of steps, the resistance of the scanning line can be reduced, and the stress can be alleviated by the light shielding film. Can be realized.

In the above-described embodiment, the second light-shielding film 24 and the barrier layer 80 are simultaneously formed of the same film. However, the number of steps is increased, but the same effect can be obtained by forming the second light-shielding film 24 and the barrier layer 80 in different steps using different materials.

FIG. 8 shows another example of a liquid crystal device which is an example of the electro-optical device of the present invention. FIG. 8 has a configuration substantially similar to that of the above-described embodiment, and is different in that it does not have the barrier layer 80. Only different points are described.

The liquid crystal device shown in FIG. 8 has the same configuration as that of the above embodiment up to the formation of the scanning lines 3a and the capacitance lines 3b. Thereafter, an opaque conductive layer is formed on the scanning lines 3a and patterned. Then, the second light shielding film 24 is formed. Next, a second interlayer insulating film 4 is formed on the second light-shielding film 24 and the capacitor line 3b, and a data line 6a is formed through a contact hole 5 formed in the second interlayer insulating film 4, thereby forming a data line. 6
A third interlayer insulating film 7 is formed on a, and a pixel electrode 9a is formed through contact holes 8 formed in the third interlayer insulating film 7, the second interlayer insulating film 4, and the first interlayer insulating film 81. Even in such a configuration, similarly to the example of FIG. 3, the resistance of the gate electrode or the scanning line can be reduced by the second light shielding film. Further, the gate electrode or the scanning line can be made redundant. Further, the first light-shielding film 11a and the second light-shielding film 24 can be made of the same material or have the same thermal expansion coefficient, so that stress can be relaxed.

(Overall Configuration of Electro-Optical Device) The overall configuration of the liquid crystal device in each embodiment configured as described above will be described with reference to FIGS. 9 and 10. FIG. FIG. 9 shows a TFT
FIG. 10 is a plan view of the array substrate 10 together with the components formed thereon as viewed from the counter substrate 20, and FIG. 10 is a cross-sectional view taken along the line HH 'of FIG.

In FIG. 9, a sealing material 52 is provided on the TFT array substrate 10 along its edge.
A third light-shielding film 53 as a frame defining the periphery of the image display area made of the same or different material as the third light-shielding film 23 is provided in parallel with the inside. In a region outside the sealing material 52, a data line driving circuit 101 for driving the data line 6a by supplying an image signal to the data line 6a at a predetermined timing and a mounting terminal 102 are provided with a TFT.
A scanning line driving circuit 104 provided along one side of the array substrate 10 and driving the scanning line 3a by supplying a scanning signal to the scanning line 3a at a predetermined timing is provided along two sides adjacent to the one side. Is provided. Then, as shown in FIG. 10, the counter substrate 20 having substantially the same contour as the sealing material 52 shown in FIG.
It is fixed to the FT array substrate 10. According to the present embodiment, the third light-shielding film 23 on the opposite substrate 20 is a TFT.
What is necessary is just to form smaller than the light shielding area of the array substrate 10. Further, the third light shielding film 23 can be easily removed depending on the use of the liquid crystal device.

In each of the embodiments described above with reference to FIGS. 1 to 10, instead of providing the data line driving circuit 101 and the scanning line driving circuit 104 on the TFT array substrate 10, for example, TAB (Tape Automated Bonding) The driving LSI mounted on the substrate may be electrically and mechanically connected via an anisotropic conductive film provided on the periphery of the TFT array substrate 10. For example, TN (Twisted) is provided on each of the side of the opposite substrate 20 where the projection light is incident and the side where the emission light of the TFT array substrate 10 is emitted.
Nematic) mode, VA (Vertically Aligned) mode,
A polarizing film, a retardation film, a polarizing plate, and the like are arranged in a predetermined direction according to an operation mode such as a PDLC (Polymer Dispersed Liquid Crystal) mode or a normally white mode / a normally black mode.

When the liquid crystal device according to each of the embodiments described above is applied to a color liquid crystal projector, the opposing substrate 20 is not provided with a color filter. However, the pixel electrode 9 on which the third light shielding film 23 is not formed
An RGB color filter may be formed on the opposing substrate 20 together with the protective film in a predetermined area opposing to a. Alternatively, it is also possible to form a color filter layer below the pixel electrode 9a facing the RGB on the TFT array substrate 10. In this way, the liquid crystal device in each embodiment can be applied to a color liquid crystal device such as a direct-view or reflection type color liquid crystal television other than the liquid crystal projector.

In the liquid crystal device according to each of the embodiments described above, incident light is made to enter from the side of the counter substrate 20 as in the related art. However, since the first light shielding film 11a is provided, the TFT array substrate 10 The incident light may be incident from the side and emitted from the counter substrate 20 side. That is,
Thus, even if the liquid crystal device is mounted on the liquid crystal projector, the channel region 1a 'of the semiconductor layer 1a and the source side L
Light can be prevented from entering the DD region 1b and the drain-side LDD region 1c, and a high-quality image can be displayed. Here, conventionally, the TFT array substrate 10
Anti-reflection AR to prevent reflection on the back side of the
(Anti Reflection) Although it was necessary to separately arrange a coated polarizing plate or attach an AR film, in each embodiment, the surface of the TFT array substrate 10 and the semiconductor layer 1a
Since the first light-shielding film 11a is formed between at least the channel region 1a ', the source-side LDD region 1b, and the drain-side LDD region 1c, such an AR-coated polarizing plate or AR film may be used. There is no need to use a substrate obtained by subjecting the TFT array substrate 10 to an AR process. Therefore, according to each of the embodiments, the material cost can be reduced, and the yield is not significantly reduced due to dust, scratches or the like when attaching the polarizing plate, which is very advantageous. In addition, since light resistance is excellent, even if a bright light source is used or polarization conversion is performed by a polarizing beam splitter to improve light use efficiency, image quality deterioration such as crosstalk due to light does not occur.

The switching element provided in each pixel has been described as a normal stagger type or coplanar type polysilicon TFT.
The embodiments are also effective for other types of TFTs such as TFTs and amorphous silicon TFTs.

(Electronic Apparatus) Next, an embodiment of an electronic apparatus including the liquid crystal device 100 described in detail above will be described with reference to FIGS.

First, FIG. 11 shows the liquid crystal device 100
1 shows a schematic configuration of an electronic device provided with.

In FIG. 11, the electronic equipment includes a display information output source 1000, a display information processing circuit 1002, and a drive circuit 1.
004, a liquid crystal device 100, a clock generation circuit 1008, and a power supply circuit 1010. The display information output source 1000 includes a ROM (Read Only Memory),
It includes a memory such as an AM (Random Access Memory), an optical disk device, and a tuning circuit that tunes and outputs an image signal, and displays display information such as an image signal in a predetermined format based on a clock signal from a clock generation circuit 1008. Output to the information processing circuit 1002. The display information processing circuit 1002 includes various known processing circuits such as an amplification / polarity inversion circuit, a serial-parallel conversion circuit, a rotation circuit, a gamma correction circuit, and a clamp circuit, and is input based on a clock signal. Digital signals are sequentially generated from the display information and output to the drive circuit 1004 together with the clock signal CLK. The drive circuit 1004 drives the liquid crystal device 100. The power supply circuit 1010 supplies a predetermined power to each of the above-described circuits. Note that the drive circuit 1004 may be mounted on the TFT array substrate included in the liquid crystal device 100, and in addition, the display information processing circuit 1002 may be mounted.

Next, FIGS. 12 and 13 show specific examples of the electronic apparatus thus configured.

In FIG. 12, a liquid crystal projector 1100, which is an example of electronic equipment, prepares three liquid crystal display modules each including the liquid crystal device 100 in which the above-described drive circuit 1004 is mounted on a TFT array substrate, and each of the light sources for RGB. The projector is used as the bulbs 100R, 100G, and 100B. In the liquid crystal projector 1100, when projection light is emitted from a lamp unit 1102 of a white light source such as a metal halide lamp, three mirrors 1106 and two dichroic mirrors 11 are provided.
08, light components R corresponding to the three primary colors of RGB,
Light valve 100 divided into G and B and corresponding to each color
R, 100G and 100B, respectively. At this time, in particular, the B light is used to prevent light loss due to a long optical path, so that the input lens 1122, the relay lens 1123, and the output lens 11
24, through a relay lens system 1121. Then, the light valves 100R, 100G and 10
The light components corresponding to the three primary colors, each modulated by 0B,
After being recombined by the dichroic prism 1112, it is projected as a color image on the screen 1120 via the projection lens 1114.

In FIG. 13, a laptop personal computer (PC) 1200 for multimedia, which is another example of electronic equipment, has the above-described liquid crystal device 100 provided in a top cover case, and further includes a CPU,
The keyboard 1202 accommodates a memory, a modem, and the like.
Is provided.

In addition to the electronic devices described above with reference to FIGS. 12 to 13, a liquid crystal television, a viewfinder type or a monitor direct-view type video tape recorder, a car navigation device, an electronic organizer, a calculator, a word processor, an engineering machine, etc. A workstation (EWS), a mobile phone, a video phone, a POS terminal, a device equipped with a touch panel, and the like are examples of the electronic device shown in FIG.

As described above, according to the present embodiment, it is possible to realize various electronic devices having a liquid crystal device capable of displaying high-quality images with high manufacturing efficiency.

[Brief description of the drawings]

FIG. 1 is an equivalent circuit of various elements, wirings, and the like provided in a plurality of pixels in a matrix forming an image display area in a liquid crystal device according to a first embodiment of the electro-optical device.

FIG. 2 shows a data line in the liquid crystal device according to the first embodiment;
FIG. 3 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which a scanning line, a pixel electrode, a light shielding film, and the like are formed.

FIG. 3 is a sectional view taken along line A-A 'of FIG.

FIG. 4 is a process diagram (part 1) for sequentially illustrating the manufacturing process of the liquid crystal device of the first embodiment.

FIG. 5 is a process diagram (part 2) for sequentially illustrating the manufacturing process of the liquid crystal device of the first embodiment.

FIG. 6 is a process diagram (part 3) for sequentially illustrating the manufacturing process of the liquid crystal device of the first embodiment.

FIG. 7 is a process diagram (part 4) for sequentially illustrating the manufacturing process of the liquid crystal device of the first embodiment.

FIG. 8 is a sectional view of a liquid crystal device which is another embodiment of the electro-optical device.

FIG. 9 is a plan view of a TFT array substrate in the liquid crystal device of each embodiment together with components formed thereon as viewed from a counter substrate side.

FIG. 10 is a sectional view taken along line H-H ′ of FIG. 9;

FIG. 11 is a block diagram showing a schematic configuration of an embodiment of an electronic device according to the present invention.

FIG. 12 is a cross-sectional view illustrating a liquid crystal projector as an example of an electronic apparatus.

FIG. 13 is a front view illustrating a personal computer as another example of the electronic apparatus.

[Explanation of symbols]

 1a semiconductor layer 1a 'channel region 1b low concentration source region (source side LDD region) 1c low concentration drain region (drain side LDD region) 1d high concentration source region 1e high concentration drain region 1f first accumulation Capacitance electrode 2 ... Gate insulating film (first dielectric film) 3a ... Scan line 3b ... Capacitance line (second storage capacitor electrode) 4 ... Second interlayer insulating film 5 ... Contact hole 6a ... Data line 7 ... Third interlayer insulating Film 8a: First contact hole 8b: Second contact hole 8c: Third contact hole 9a: Pixel electrode 10: TFT array substrate 11a, 11b: First light-shielding film 12: Base insulating film 15: Contact hole 16: Alignment film 20 ... counter substrate 21 ... counter electrode 22 ... alignment film 23 ... third light shielding film 24 ... third light shielding film 30 ... pixel switching TFT 50 ... liquid crystal layer 5 ... seal material 53 ... third light shielding film 70 ... storage capacitance 70a ... first storage capacitance 70b ... second storage capacitance 80 ... barrier layer 81 ... first interlayer insulating film (second dielectric film) 101 ... data line driving circuit 104 ... Scanning line drive circuit

Claims (20)

[Claims] A switching element having a substrate, a semiconductor film provided above the substrate, and a gate electrode provided on a channel region of the semiconductor film; A first light-shielding film provided to face the semiconductor film; a second light-shielding film provided on the gate electrode and provided so as to face at least the channel region of the semiconductor film; An electro-optical device, wherein the first light-shielding film and the second light-shielding film are arranged so as to reduce stress applied to the semiconductor film. A switching element having a substrate, a semiconductor film provided above the substrate, and a gate electrode provided on a channel region of the semiconductor film; A first light-shielding film provided to face the semiconductor film; a second light-shielding film provided on the gate electrode and provided so as to face at least the channel region of the semiconductor film; Wherein the first light-shielding film and the second light-shielding film are made of substantially the same material. A switching element having a substrate, a semiconductor film disposed above the substrate, and a gate electrode disposed on a channel region of the semiconductor film; A first light-shielding film provided to face the semiconductor film; a second light-shielding film provided on the gate electrode and provided so as to face at least the channel region of the semiconductor film; Wherein the first light-shielding film and the second light-shielding film are made of materials having the same thermal expansion coefficient. 4. The method according to claim 1, wherein the first light-shielding film or the second light-shielding film is made of a material having a larger coefficient of thermal expansion than polysilicon. Electro-optical device. 5. The light-shielding film according to claim 1, wherein the first light-shielding film or the second light-shielding film is made of a material having a larger thermal expansion coefficient than a silicate glass film, a silicon nitride film, and a silicon oxide film. Item 5. The electro-optical device according to any one of items 4. 6. The first light-shielding film or the second light-shielding film is made of a silicide containing at least one of a group consisting of Ti, Cr, W, Ta, Mo, and Pb. The electro-optical device according to claim 1. 7. The electro-optical device according to claim 1, wherein the gate electrode and the second light-shielding film are electrically connected. 8. The semiconductor device according to claim 1, further comprising a first interlayer insulating film interposed between the gate electrode and the second light shielding film, wherein the gate electrode and the second light shielding film are formed on the first interlayer insulating film. The electro-optical device according to any one of claims 1 to 7, wherein the electro-optical device is electrically connected through a provided through hole. 9. The electro-optical device according to claim 1, wherein the gate electrode and the second light-shielding film are provided electrically independently. 10. A plurality of scanning lines and a plurality of data lines on a substrate, a thin film transistor connected to each of the scanning lines and each of the data lines, a pixel electrode connected to the thin film transistor, and a storage capacitor in the pixel electrode , A semiconductor layer forming source and drain regions and a first storage capacitor electrode of the thin film transistor, an insulating thin film formed on the semiconductor layer, and a semiconductor layer formed on the insulating thin film. A gate electrode of the thin film transistor that is formed of a part of the scanning line, a second storage capacitor electrode that is formed on the insulating thin film and that is formed of a part of the capacitance line, the scanning line and the capacitance line A first interlayer insulating film formed above the first interlayer insulating film, a conductive layer formed above the first interlayer insulating film, and a second interlayer insulating film formed above the conductive layer. A first light-shielding film disposed on the substrate side of the semiconductor film so as to face the semiconductor film; and a first light-shielding film disposed to cover the gate electrode with the first interlayer insulating film interposed therebetween. An electro-optical device, comprising: a second light-shielding film disposed so as to face at least the channel region of the semiconductor film. 11. The source of the semiconductor layer is formed on the second interlayer insulating film through a contact hole formed in the insulating thin film and the first and second interlayer insulating films. The electro-optical device according to claim 10, wherein the electro-optical device is electrically connected to the region. 12. The semiconductor device according to claim 1, wherein the conductive layer and the second light-shielding film are electrically connected to a drain region of the semiconductor layer via a contact hole formed in the first interlayer insulating film and the insulating thin film. The electro-optical device according to any one of claims 10 to 11, wherein the electro-optical device is characterized in that: 13. The light-shielding film according to claim 10, wherein the first light-shielding film and the second light-shielding film are arranged so as to reduce stress applied to the semiconductor film. An electro-optical device according to claim 1. 14. The light-shielding film according to claim 2, wherein said first light-shielding film and said second light-shielding film are made of substantially the same material.
An electro-optical device according to claim 1. An electro-optical device according to any one of claims 10 to 13. 15. A step of forming a first light-shielding film on a substrate, a step of forming a base insulating film so as to cover the first light-shielding film, and facing the first light-shielding film on the base insulating film. like,
Forming a source layer, a channel region, the drain region of the thin film transistor, and a semiconductor layer to be a first storage capacitor electrode of the storage capacitor; forming an insulating thin film on the semiconductor layer; Forming the scanning line; and arranging a second light-shielding film above the scanning line, wherein the first light-shielding film and the second light-shielding film have a stress applied to the semiconductor film. A method of manufacturing an electro-optical device, wherein the method is provided so as to mitigate the problem. 16. A plurality of scanning lines, a plurality of data lines,
A method of manufacturing an electro-optical device having a thin film transistor connected to each of the scanning lines and the data lines, a pixel electrode connected to the thin film transistor, and a storage capacitor; forming a first light-shielding film on a substrate; (1) forming a base insulating film so as to cover the light shielding film; and forming a source region, a channel region, a drain region, and a storage capacitor of the thin film transistor on the base insulating film so as to face the first light shielding film. Forming a semiconductor layer to be a first storage capacitor electrode, forming an insulating thin film on the semiconductor layer, forming the scanning line on the insulating thin film, and covering the scanning line. Forming a first interlayer insulating film; and forming a second light-shielding film so as to cover at least the channel region of the semiconductor film from above the scanning line. Method of manufacturing an electro-optical device comprising and. A plurality of scanning lines, a plurality of data lines,
A method of manufacturing an electro-optical device having a thin film transistor connected to each of the scanning lines and the data lines, a pixel electrode connected to the thin film transistor, and a storage capacitor; forming a first light-shielding film on a substrate; (1) forming a base insulating film so as to cover the light shielding film; and forming a source region, a channel region, a drain region, and a storage capacitor of the thin film transistor on the base insulating film so as to face the first light shielding film. Forming a semiconductor layer to be a first storage capacitor electrode, forming an insulating thin film on the semiconductor layer, forming the scanning line on the insulating thin film, and covering the scanning line. Forming a first interlayer insulating film, forming a contact hole in the first interlayer insulating film on the scanning line, and via the contact hole Method of manufacturing an electro-optical device which comprises a step of forming a second light-shielding layer on the first interlayer insulating film so as to be connected to the serial scan line, the. 18. A plurality of scanning lines, a plurality of data lines,
A method of manufacturing an electro-optical device having a thin film transistor connected to each of the scanning lines and the data lines, a pixel electrode connected to the thin film transistor, and a storage capacitor; forming a first light-shielding film on a substrate; (1) forming a base insulating film so as to cover the light-shielding film; Forming a semiconductor layer to be a first storage capacitor electrode, forming an insulating thin film on the semiconductor layer, forming the scanning line and the capacitor line on the insulating thin film, respectively, (1) forming a first interlayer insulating film so as to cover the light-shielding film and the capacitor line; and (c) forming a first layer on the insulating thin film and the first interlayer insulating film on the drain region. While forming a contact hole,
Forming a third contact hole in the first interlayer insulating film on the gate electrode; and forming a conductive layer on the first interlayer insulating film so as to connect to the semiconductor layer through the first contact hole. Forming a second light-shielding film on the first interlayer insulating film so as to be connected to the gate electrode via the third contact hole. Production method. 19. a step of forming a second interlayer insulating film on the conductive layer and the second light-shielding film, a step of forming the data line on the second interlayer insulating film, and a third step on the data line. Forming an interlayer insulating film; opening the second contact hole in the second and third interlayer insulating films; and forming a pixel so as to be connected to the conductive layer via the second contact hole. The method of manufacturing an electro-optical device according to claim 18, further comprising: forming an electrode. 20. A light source, an optical system for projecting incident light, and interposed between the light source and the optical system, for modulating light from the light source to guide the light to the optical system. A light valve having the electro-optical device according to claim 15 or an electro-optical device manufactured by the manufacturing method according to any one of claims 16 to 19. And electronic equipment.