JP2001064685A - Semiconductor component cleaning agent, semiconductor component cleaning method, polishing composition, and polishing method - Google Patents

Abstract

(57) [PROBLEMS] To provide a cleaning agent which has a low environmental load and has a high cleaning effect on impurities remaining on a semiconductor component such as a semiconductor substrate after chemical mechanical polishing (CMP); and An object of the present invention is to provide a polishing composition used for polishing a surface of a semiconductor component such as a semiconductor substrate, a recording medium component and an optical component. SOLUTION: Among a (co) polymer having a carboxylic acid (salt) group, a (co) polymer having a sulfonic acid (salt) group, and a (co) polymer having a phosphonic acid (salt) group, A polishing composition containing at least two kinds of (co) polymers and, if necessary, a detergent for semiconductor components containing a phosphonic acid compound, and a polishing aid comprising the above-mentioned detergent for semiconductor components.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning agent for semiconductor components and a method for cleaning semiconductor components, and more particularly to a method for cleaning the surface of a semiconductor component such as a semiconductor substrate before and after chemical mechanical polishing (CMP) in a semiconductor manufacturing process. The present invention relates to a semiconductor component cleaning agent used for cleaning and a semiconductor component cleaning method. The present invention also relates to a polishing composition and a polishing method, and more particularly to a polishing composition and a polishing method used for polishing surfaces of semiconductor components such as semiconductor substrates, recording medium components, optical components and the like.

[0002]

2. Description of the Related Art As a new flattening technique in a semiconductor device manufacturing process, chemical mechanical polishing (CMP) has attracted attention, and it has been compared with a conventional reflow technique or an etch-back technique such as RIE (reactive ion etching). And there is an advantage that good flattening can be realized with less dependency on pattern. This kind of CMP
Is applied to, for example, metal flattening of a multilayer or flattening of an interlayer insulating film. Conventionally, various methods have been proposed as a method of cleaning a substrate after chemical mechanical polishing as a step of planarizing an interlayer insulating film. The most versatile is R, which is often used in the semiconductor manufacturing process.
CA cleaning. The RCA cleaning includes a cleaning step using a mixture of ammonia, hydrogen peroxide and water, and a cleaning step using a mixture of hydrochloric acid, hydrogen peroxide and water.

Further, there have been proposed methods of etching the surface of an interlayer insulating film with a dilute hydrofluoric acid solution, and performing acid cleaning when using an alkaline polishing agent. The most frequently used post-treatment for the chemical mechanical polishing step is that after brush scrub cleaning, for example, SC with an alkaline cleaning liquid of ammonia: hydrogen peroxide: water (weight ratio) of 1: 1: 5.
1) Cleaning is performed to remove particles adhered to the substrate surface in the polishing step.

Further, an aqueous solution of citric acid is used for cleaning metal impurities adsorbed on the substrate surface after CMP, and an aqueous solution of citric acid or ethylenediaminetetraacetic acid (EDTA) is used together with hydrogen fluoride. Is known. Further, a cleaning solution containing an organic acid such as citric acid and a complexing agent is also known. However, in the above-mentioned cleaning liquid, it is difficult to remove metal impurities such as abrasive particles remaining on the substrate after chemical mechanical polishing to a level that does not cause any problem, and it is necessary to have a high concentration in order to obtain a cleaning effect. There is a problem that the burden on the environment such as waste liquid treatment is large.

In addition, chemical mechanical polishing (CM) conventionally used in a flattening process for semiconductor parts such as semiconductor substrates and interlayer insulating films, recording medium parts and optical parts.
As the polishing composition used in P), for example, a polishing composition in which polishing abrasive grains such as diamond, alumina, and SiC of submicron to several tens of micron order are dispersed in water is known. Kaihei 1-205973
JP, JP-A-62-25187, JP-A-9-19-1
43455). However, when these polishing compositions are used, the dispersibility of the polishing abrasive grains, and the dispersion removal and prevention of reattachment of polishing dust generated by polishing are insufficient, so that pits, scratches, Irregularities such as orange peel and cracks are likely to occur, the polishing rate cannot be increased, and productivity is poor. Polishing compositions having a high polishing effect are also known, but since they are expensive, there is a limit to cost reduction.

[0006] In recent years, with the development of electronic devices, there is a demand for higher recording density of magnetic disk recording devices.
To increase the density, it is necessary to reduce the flying height of the magnetic head from the magnetic disk. If the flying height is small, if there is a protrusion on the hard disk surface, it will cause a head crash,
There is a risk of damaging the hard disk and magnetic head.
In addition, even a minute projection that does not lead to a head crash tends to cause various errors when reading and writing information due to disturbance of magnetic properties of the projection. Therefore, in the polishing step of the hard disk substrate, it is important to form a polished surface having excellent smoothness. As a magnetic disk substrate,
In addition to conventional aluminum substrates, glassy carbon substrates, which are brittle materials, are also used.
A relatively inexpensive polishing composition suitable for forming a surface having a high polishing rate and a high degree of smoothness has not been provided.

[0007]

SUMMARY OF THE INVENTION It is an object of the present invention to provide a method for reducing the burden on the environment and remaining on a semiconductor component such as a semiconductor substrate after chemical mechanical polishing (CMP).
Fe, Mn, A based on CMP abrasive grains such as alumina, metal impurities or metal wiring contained in CMP
An object of the present invention is to provide a cleaning agent having a high cleaning effect on impurities such as l, Ce, Cu, W, and Ti, and a method for cleaning semiconductor components. Further, an object of the present invention is suitable for chemical mechanical polishing (CMP) of a semiconductor component such as a semiconductor substrate and an interlayer insulating film, a recording medium component and an optical component, and flattening and polishing the surface of an object to be polished. Another object of the present invention is to provide a polishing composition and a polishing method capable of increasing the speed.

[0008]

The present invention provides (a) a (co) polymer having a carboxylic acid (salt) group, (b) a (co) polymer having a sulfonic acid (salt) group, and (c) The present invention relates to a cleaning agent for semiconductor components containing at least two or more (co) polymers among (co) polymers having a phosphonic acid (salt) group. It is preferable to use the cleaning agent for semiconductor components for cleaning semiconductor components after chemical mechanical polishing. Also,
The present invention relates to a method for cleaning a semiconductor component, comprising cleaning the semiconductor component using the above-mentioned cleaning agent for a semiconductor component. Furthermore, the present invention relates to a polishing composition comprising at least an abrasive and a polishing aid comprising the above-mentioned cleaning agent for semiconductor components. It is preferable that a solvent is further added to the polishing composition. The polishing composition is preferably used for chemical mechanical polishing. Furthermore, the present invention relates to a polishing method characterized by polishing an object to be polished using the above-mentioned polishing composition.

[0009]

BEST MODE FOR CARRYING OUT THE INVENTION The (a) (co) polymer having a carboxylic acid (salt) group, which is one of the constituent components of the cleaning agent for semiconductor parts of the present invention, is a simple copolymer having a carboxylic acid (salt) group. It is obtained by (co) polymerizing the monomer. Here, the monomer having a carboxylic acid (salt) group is not particularly limited as long as it is a monomer having a carboxylic acid group and having a polymerizable double bond. For example, itaconic acid, itaconic anhydride, (Meth) acrylic acid, maleic acid, maleic anhydride, fumaric acid, fumaric anhydride, citraconic acid, citraconic anhydride, glutaconic acid, vinyl acetic acid, allyl acetic acid, phosphinocarboxylic acid, α-haloacrylic acid, β-carboxylic acid Examples thereof include acids or salts thereof, and alkyl (meth) acrylates such as methyl (meth) acrylate, ethyl (meth) acrylate, and octyl (meth) acrylate. Preferably, itaconic acid, itaconic anhydride, acrylic acid, methacrylic acid or salts thereof. These monomers containing a carboxylic acid (salt) group and having a polymerizable double bond can be used alone or in combination of two or more.

A method for producing a (co) polymer from the above-mentioned monomer having a carboxylic acid (salt) group is, for example, as follows. That is, the above monomer component is hydrogen peroxide,
In the presence of a known polymerization initiator such as sodium persulfate and potassium persulfate, the reaction temperature is usually 20 to 200 ° C, preferably 40 to 150 ° C, for 0.1 to 20 hours, preferably 1 to 15 hours. For a (co) polymer. As one prescription, the polymerization can be carried out by sequentially adding the monomer components used for the polymerization. Here, the sequential polymerization is a constant amount per unit time,
Alternatively, the amount of addition may be varied and the monomer component may be introduced into the polymerization system within a predetermined time.

In the above-mentioned polymerization reaction, a polymerization solvent can be used to smoothly carry out the reaction. As the polymerization solvent, water or a mixture of water and an organic solvent miscible with water can be used. Specific examples of the organic solvent are not particularly limited as long as they can be mixed with water, and include, for example, tetrahydrofuran, 1,4-dioxane, alcohols and the like. (A) The weight average molecular weight of the (co) polymer having a carboxylic acid (salt) group is from 1,000 to 1,000.
It is 500,000, preferably 3,000 to 300,000, and more preferably 5,000 to 300,000. If less than 1,000,
In some cases, the cleaning effect is not sufficiently exerted. On the other hand, when it exceeds 500,000, handling is difficult due to gelation and the like.

The (a) (co) polymer having a carboxylic acid (salt) group is preferably water-soluble for use as a cleaning agent for semiconductor components. In order to make the polymer water-soluble, a (co) polymer having a counter ion of a cationic species may be used. The cationic species is not particularly limited, but is preferably hydrogen, an alkali metal, an alkaline earth metal, ammonia, an amine, or the like. Examples of the alkali metal include sodium and potassium, examples of the alkaline earth metal include calcium and magnesium, and examples of the amine include methylamine, ethylamine, propylamine, dimethylamine, diethylamine, triethylamine, butylamine dibutylamine, and tributylamine. Examples thereof include alkylamines, polyamines such as ethylenediamine, diethylenetriamine and triethylenetetramine, morpholine, piperidine and the like. Preferred are hydrogen, potassium, ammonia and alkylamine.

[0013] Further, (co) having these cationic species
In order to obtain a polymer (salt), a monomer having a preferable cationic species may be (co) polymerized, or an acid type monomer may be (co) polymerized and then neutralized with a corresponding alkali. May be. It is also possible to exchange (co) polymers (salts) with other cationic species by various ion exchange techniques. These cationic species can be used alone or in combination of two or more. The amount of the component (a) used is preferably 5% by weight or more, more preferably 10% by weight or more, based on the entire components (a) to (c). When the amount is less than 5% by weight, the metal (ion) removal ability may decrease when used as a cleaning agent, and the polishing rate may decrease when used as an abrasive composition. Absent.

The (co) polymer having a sulfonic acid (salt) group, which is one of the constituent components of the cleaning agent for semiconductor parts of the present invention, is a base polymer having a diene structure or an aromatic structure (precursor). ) Or a part or all of the diene structure is hydrogenated and then sulfonated. In that case, a known hydrogenation catalyst can be used, and examples thereof include a hydrogenation catalyst and a hydrogenation method as described in JP-A-5-222115. After hydrogenation of the base polymer, it can be sulfonated by the method described below, but after sulfonation of the base polymer, hydrogenation does not pose any problem.

The base polymer used in the present invention may be any of random type, block type copolymer such as AB type or ABA type without any particular limitation. When a block copolymer is used as the base polymer, a copolymer having a block structure and having a sulfonic acid (salt) group can be obtained. For example, in the case of a styrene-isoprene binary block copolymer, an isoprene unit can be preferentially sulfonated by using a sulfuric anhydride / electron-donating compound described later, and a styrene-isoprene block copolymer isoprene. After hydrogenating the unit, the aromatic ring of styrene is preferentially sulfonated with sulfuric anhydride to obtain a copolymer having a sulfonic acid (salt) group block and a hydrophobic block.

Preferred base polymers include, for example, polystyrene, isoprene homopolymer, butadiene homopolymer, styrene-isoprene random copolymer, styrene-isoprene block copolymer, styrene-isoprene-styrene ternary block copolymer, Butadiene-styrene random copolymer, butadiene-styrene block copolymer, styrene-butadiene-styrene block copolymer, hydrogenated products of these (co) polymers, ethylene-propylene-diene terpolymer and the like. And
Preferred are aromatic monomer polymers, aromatic monomer-conjugated diene block copolymers, and more preferred are polystyrene, styrene-isoprene-based random copolymers, styrene-isoprene-based block copolymers, and hydrogenated products thereof.

The (b) sulfonic acid (salt) group-containing (co) polymer of the present invention can be prepared by subjecting the above-mentioned base polymer to a known method, for example, a new experimental course edited by the Chemical Society of Japan (Vol. 14, III,
1773) or sulfonation by a method described in JP-A-2-227403. That is, the base polymer can be sulfonated at a double bond portion in the polymer using a sulfonating agent. At the time of this sulfonation, the double bond is opened to form a single bond, or a hydrogen atom replaces a sulfonic acid group while the double bond remains. When another monomer is used, for example, an aromatic unit may be sulfonated in addition to a diene unit portion in a double bond portion. The sulfonating agent in this case is preferably sulfuric anhydride, a complex of sulfuric anhydride and an electron donating compound, sulfuric acid, chlorosulfonic acid, fuming sulfuric acid, hydrogen sulfite (Na salt, K salt, Li salt, etc.). Are used.

Here, as the electron donating compound, N,
Ethers such as N-dimethylformamide, dioxane, dibutyl ether, tetrahydrofuran, diethyl ether; pyridine, piperazine, trimethylamine,
Amines such as triethylamine and tributylamine;
Sulfides such as dimethyl sulfide and diethyl sulfide; nitrile compounds such as acetonitrile, ethyl nitrile and propyl nitrile; and the like, of which N, N-dimethylformamide and dioxane are preferable.

The amount of the sulfonating agent is usually 0.2 to 2.0 mol, preferably 0.3 to 1.2 mol, as calculated as sulfuric anhydride, relative to 1 mol of the diene unit in the base polymer. If it is less than 0.2 mol, it is difficult to obtain a sulfonic acid polymer, while if it exceeds 2.0 mol, the amount of unreacted sulfonating agent such as sulfuric anhydride increases, and after neutralization with alkali, a large amount of sulfate And the purity is undesirably reduced.

In the sulfonation, a solvent inert to a sulfonating agent such as sulfuric anhydride can be used. Examples of the solvent include halogenated compounds such as chloroform, dichloroethane, tetrachloroethane, tetrachloroethylene and dichloromethane. Hydrocarbons; nitromethane,
Nitro compounds such as nitrobenzene; and aliphatic hydrocarbons such as liquid sulfur dioxide, propane, butane, pentane, hexane, and cyclohexane. These solvents may be used as a mixture of two or more.

The sulfonation reaction temperature is usually -7.
0 to + 200 ° C, preferably -30 to + 50 ° C,
If the temperature is lower than -70 ° C, the sulfonation reaction is slow, which is not economical. On the other hand, if the temperature exceeds + 200 ° C, a side reaction occurs, and the product may be blackened or insolubilized, which is not preferable. Thus, an intermediate in which a sulfonating agent such as sulfuric anhydride is bonded to the base polymer (a sulfonate of the base polymer, hereinafter referred to as “intermediate”) is produced.

The (b) (co) polymer having a sulfonic acid (salt) group of the present invention is prepared by reacting water or a basic compound with the intermediate to open the double bond to form a sulfonic acid group. Is obtained by replacing a hydrogen atom with a sulfonic acid group while leaving a double bond or a double bond remaining.

Examples of the basic compound include alkali metal hydroxides such as sodium hydroxide, potassium hydroxide and lithium hydroxide; sodium methoxide, sodium ethoxide, potassium methoxide, sodium tert-butoxide, potassium tert-oxide. Alkali metal alkoxides such as butoxide; carbonates such as sodium carbonate, potassium carbonate and lithium carbonate; methyllithium, ethyllithium,
organic metal compounds such as n-butyllithium, sec-butyllithium, amyllithium, propylsodium, methylmagnesium chloride, ethylmagnesium bromide, propylmagnesium iodide, diethylmagnesium, diethylzinc, triethylaluminum, triisobutylaluminum; Amines such as trimethylamine, triethylamine, tripropylamine, tributylamine, pyridine, aniline, piperazine; sodium, lithium, potassium,
Metal compounds such as calcium and zinc can be mentioned. These basic compounds can be used alone or in combination of two or more. Among these basic compounds, alkali metal hydroxides and aqueous ammonia are preferable, and sodium hydroxide and lithium hydroxide are particularly preferable.

The amount of the basic compound used is 2 mol or less, preferably 1.3 mol, per mol of the sulfonating agent used.
If it is less than 2 moles, and if it exceeds 2 moles, the amount of unreacted basic compounds increases, and the purity of the product is undesirably reduced. In the reaction between the intermediate and a basic compound, the basic compound can be used in the form of an aqueous solution, or can be used by dissolving it in an organic solvent inert to the basic compound. Examples of the organic solvent include, in addition to the above various organic solvents, aromatic hydrocarbon compounds such as benzene, toluene, and xylene; methanol, ethanol, propanol,
Examples include alcohols such as isopropanol and ethylene glycol. These solvents may be used as a mixture of two or more.

When the basic compound is used as an aqueous solution or an organic solvent solution, the basic compound concentration is usually
It is about 1 to 70% by weight, preferably about 10 to 50% by weight. The reaction temperature is usually -30 to +150.
° C, preferably 0 to + 120 ° C, more preferably +5
It is carried out at 0 to + 100 ° C, and can be carried out at normal pressure, reduced pressure or increased pressure. Further, the reaction time is usually 0.1 to 24 hours, preferably 0.5 to 24 hours.
~ 5 hours.

Further, (b) the (co) polymer having a sulfonic acid (salt) group, which is one of the components of the cleaning agent for semiconductor parts of the present invention, is a monomer having a sulfonic acid (salt) group. Can also be obtained by (co) polymerization of Examples of the monomer having a sulfonic acid (salt) group include isoprenesulfonic acid,
(Meth) acrylamide-2-methylpropanesulfonic acid, styrenesulfonic acid, methallylsulfonic acid, vinylsulfonic acid, allylsulfonic acid, isoamylenesulfonic acid, and unsaturated (meth) represented by the following general formula (I) Allyl ether-based monomers [for example, 3-allyloxy-2-hydroxypropanesulfonic acid, 3-methallyloxy-2-
Hydroxypropanesulfonic acid),

[0027]

[In the formula, R ¹ is a hydrogen atom or a group having 1 to 1 carbon atoms.
8 are the same or different, and represent 0 or an integer of 1 to 100 (provided that a + b + c + d = 0
-100), the (OC ₂ H ₄ ) unit and the (OC ₃ H ₆ ) unit are bonded in an arbitrary order, Y and Z are sulfonic acid groups or hydroxyl groups, and at least one of Y and Z is It is a sulfonic acid group. ], Sulfoethyl (meth) acrylate, a conjugated diene sulfonic acid represented by the following general formula (II) (for example, 2-methyl-1,3-butadiene-1-sulfonic acid)

[0029]

(Wherein R ^{2 to} R ⁷ are a hydrogen atom and a carbon atom of 1)
Or an alkyl group having 8 to 8 carbon atoms, an aryl group having 6 to 20 carbon atoms, or —SO ₃ X, wherein X is a hydrogen atom, a metal atom, an ammonium group, or an amino group, and at least one of R ^{2 to} R ⁷ is -SO ₃ X), (meth) acrylamido-2-methylpropane sulfonic acid), 2-hydroxy-3-acrylamide propane sulfonic acid, and salts thereof, and the like. Preferred are isoprenesulfonic acid, (meth) acrylamido-2-methylpropanesulfonic acid and salts thereof. Particularly preferred are isoprenesulfonic acid, (meth) acrylamido-2-methylpropanesulfonic acid, and salts thereof. These sulfonic acid (salt) group-containing monomers can be used alone or in combination of two or more.

The method for producing the (co) polymer from the monomer having a sulfonic acid (salt) group (b) is the same as the method for producing the component (a). Also,
(B) The (co) polymer having a sulfonic acid (salt) group is preferably water-soluble in order to be used as a detergent for semiconductor components. The same as those for the component (a) can be mentioned. The amount of the component (b) used is preferably 5% by weight or more, more preferably 10% by weight, based on the entire components (a) to (c). If it is less than 5% by weight, the metal (ion) removal ability may decrease when used as a cleaning agent, and when used as an abrasive composition,
It is not preferable because scratching may easily occur.

Further, (c) a (co) polymer having a phosphonic acid (salt) group, which is one of the constituent components of the cleaning agent for semiconductor parts of the present invention, is obtained by subjecting vinylphosphonic acid and its salt to (co) polymerization. Is obtained. Here, one or more vinylphosphonic acids (salts) can be used in combination. The method for producing the (co) polymer from the phosphonic acid (salt) (c) includes the same method as the method for producing the component (a). In addition, (c) the (co) polymer having a phosphonic acid (salt) group is preferably water-soluble in order to be used as a cleaning agent for semiconductor components. And the same as those for the component (a).

The amount of the component (c) used is from (a) to
(C) preferably 5 to 50% by weight, based on the whole components;
More preferably, it is 10 to 30% by weight. If it is less than 5% by weight, the metal (ion) removal ability may decrease when used as a detergent, and the polishing rate may decrease when used as an abrasive composition, which is not preferable. . On the other hand, even if it exceeds 50% by weight,
It is not economical because it does not have the corresponding effect.

As the components (a) to (c) of the present invention, preferably, a carboxylic acid polymer (salt) / sulfonic acid polymer (salt) / phosphonic acid polymer (salt), carboxylic acid polymer Combined (salt) / sulfonic acid polymer (salt), sulfonic acid polymer (salt) / phosphonic acid polymer (salt).

The detergent for semiconductor components of the present invention has a total concentration of components (a) to (c) of 0.1 to 20% by weight in water and / or a hydrophilic organic solvent (hereinafter also referred to as a "solvent"). %, Particularly preferably 1.0 to 10% by weight. When the concentration is less than 0.1% by weight, the cleaning effect is not sufficiently exhibited. On the other hand, when the concentration is higher than 20% by weight, the effect corresponding to the concentration cannot be expected and the efficiency is not high.

Among the above solvents, distilled water, deionized water, tap water, industrial water and the like can be appropriately selected as water. Other solvents include alcohols, ethers, ketones, and the like. Above all, those mainly composed of water,
Water is particularly preferred. Among the hydrophilic organic solvents, specific examples of alcohols include methanol, ethanol, and n.
-Propyl alcohol, i-propyl alcohol, n-
Butyl alcohol, sec-butyl alcohol, t-butyl alcohol, n-hexyl alcohol, n-octyl alcohol, ethylene glycol, diethylene glycol, triethylene glycol, ethylene glycol monobutyl ether, ethylene glycol monoethyl ether acetate, diethylene glycol monoethyl ether, propylene Glycol monomethyl ether, propylene monomethyl ether acetate, diacetone alcohol and the like can be mentioned. Further, specific examples of ethers include tetrahydrofuran and dioxane, and specific examples of ketones include acetone, methyl ethyl ketone, methyl isobutyl ketone, diisobutyl ketone, and the like. These hydrophilic organic solvents can be used alone or in combination of two or more.

It is preferable that the cleaning agent for semiconductor parts of the present invention further contains a phosphonic acid compound. Phosphonic acid compounds include phosphonic acid, aminotrimethylenephosphonic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, ethylphosphonic acid, isopropylphosphonic acid, butylphosphonic acid, methylenediphosphonic acid, 1-hydroxyethylidene-1- Diphosphonic acid, 1,1-aminoethanediphosphonic acid, 1,1-hydroxypropanediphosphonic acid, 1,1-aminobutanediphosphonic acid, ethylenediaminetetramethylphosphonic acid, hexamethylenediaminetetramethylphosphonic acid, diethylenetriamine-pentamethylphosphonic acid , 2-phosphonoacetic acid, 2-phosphonopropionic acid, 2-phosphonosuccinic acid, 2-phosphonobutane-1,2,4, -tricarboxylic acid and salts thereof. Preferably, phosphonic acid, aminotrimethylenephosphonic acid, 1-hydroxyethylidene-1,
1-diphosphonic acid, 2-phosphonobutane-1,2,4,
-Tricarboxylic acids and salts thereof. The phosphonic acid compound is a low molecular compound different from the (co) polymer having a phosphonic acid (salt) group. The phosphonic acid compounds may be used alone or in combination of two or more.

The amount of the phosphonic acid compound used is (a)
0.1 to 10 based on the total amount of the component (c).
0% by weight, more preferably 1 to 50% by weight.
When the amount is less than 0.1% by weight, the metal (ion) removal ability is reduced when used as a cleaning agent, and when used as an abrasive composition, a sufficient polishing rate may not be obtained. There is not preferred. On the other hand, even if it exceeds 100% by weight, the effect corresponding to it is not obtained.

The cleaning agent for semiconductor parts of the present invention may contain other water-soluble (co) polymers (salts) in addition to the (co) polymers of the above components (a) to (c). Can also. Other water-soluble (co) polymers (salts) include monomers having a hydroxyl group, monomers having a skeleton derived from ethylene oxide or propylene oxide, and monomers containing a nitrogen atom such as amines and amides. And those obtained by (co) polymerizing at least one selected from the group of other monomers.

As the monomer having a hydroxyl group, for example,
Unsaturated alcohols such as vinyl alcohol, allyl alcohol, methyl vinyl alcohol, ethyl vinyl alcohol, and vinyl glycolic acid, hydroxymethyl (meth) acrylate, hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, and polyethylene glycol mono (meth) ) Acrylate, polypropylene glycol mono (meth) acrylate, glycerol mono (meth) acrylate, glycerol di (meth) acrylate, polytetramethylene glycol mono (meth) acrylate, polytetramethylene glycol di (meth) acrylate, butanediol mono (meth) )
Hydroxy group-containing (meth) acrylates such as acrylate, hexanediol mono (meth) acrylate, pentaerythritol mono (meth) acrylate, and hydroxyphenoxyethyl (meth) acrylate. Preferred is hydroxyethyl (meth) acrylate.

Examples of the monomer having a skeleton derived from ethylene oxide or propylene oxide include polyoxyethylene monomethacrylate (addition of 2 to 20 mol of alkylene oxide) and a structure represented by the following general formula (III). Compound, Wherein R ⁸ is a hydrogen atom or a methyl group, R ⁹ is an aliphatic group or an aromatic group having 1 to 18 carbon atoms, and A is a methylene group, a propylene group, or a tetramethylene group. Can be Preferred is polyoxyethylene monomethacrylate (ethylene oxide 5 mol adduct).

Examples of the monomer containing a nitrogen atom include (meth) acrylamide, N-methyl (meth) acrylamide, N-ethyl (meth) acrylamide, N-
n-propyl (meth) acrylamide, N-isopropyl (meth) acrylamide, N-dimethyl (meth) acrylamide, N-diethyl (meth) acrylamide, N
-Di-n-dipropyl (meth) acrylamide, N-methyl-N-ethyl (meth) acrylamide, N-vinylformamide, 2-vinylpyridine, 4-vinylpyridine, N-vinylpyrrolidone and the like. Preferred are (meth) acrylamide, dimethyl (meth) acrylamide, and vinylpyridine.

Other monomers include styrene and α-
Methylstyrene, vinyltoluene, aromatic vinyl compounds such as p-methylstyrene, butadiene, isoprene,
2-chloro-1,3-butadiene, 1-chloro-1,3
-Aliphatic conjugated dienes such as butadiene, vinyl cyanide compounds such as (meth) acrylonitrile, and phosphoric acid compounds other than phosphonic acid. The monomer is 1
One or more species can be used.

The method for producing the other water-soluble (co) polymer (salt) is the same as the method for producing the component (a). Further, the other water-soluble (co) polymer (salt) is preferably water-soluble in order to be used as a cleaning agent for semiconductor components, and the type of the cationic species for making the water-soluble is the above-mentioned (a). )) Same as for the component. The amount of the other water-soluble (co) polymer (salt) contained in the cleaning agent for semiconductor parts of the present invention is as follows:
It is preferably at most 30% by weight, more preferably at most 20% by weight, based on the total amount of the components (c). If it exceeds 30% by weight, the ability to remove metals (ions) and inorganic particles is reduced when used as a cleaning agent, and when used as an abrasive composition, there is a decrease in the cleaning / polishing rate and an increase in scratches. Not preferred.

The cleaning agent for semiconductor parts of the present invention includes:
It is also possible to use other known detergent components in combination. Other detergent components include, for example, ethylenediaminetetraacetic acid (EDTA), trans-1,2-cyclohexanediaminetetraacetic acid (CyDTA), nitrilotriacetic acid (NT
A), diethylenetriaminepentaacetic acid (DTPA),
N- (2-hydroxyethyl) ethylenediamine-N,
In addition to compounds such as N ', N'-triacetic acid (EDTA-OH) and polyaminocarboxylic acids such as salts thereof, oxalic acid, citric acid, gluconic acid, succinic acid, tartaric acid, fumaric acid, malic acid, pyrophosphoric acid, Organic acids such as lactic acid and benzoic acid, hydrogen fluoride, hydrogen peroxide, carbonic acid, hydrochloric acid, perchloric acid, nitric acid, sulfuric acid, sulfurous acid, persulfuric acid, phosphoric acid, phosphorous acid,
Examples include inorganic acids such as hypophosphorous acid and organic acids having these as a functional group. In general, these compounds are used in the form of a free acid or a salt, and do not adversely affect properties for semiconductor production, such as proton type, ammonium salt, amine salt, alkali metal such as lithium, sodium and potassium, and magnesium. , Calcium and other alkaline earth metals, zinc, aluminum, nickel,
It is preferably used in the form of a salt such as a salt with iron or the like. Of these, salts of ammonia, amine, potassium and the like are more preferable, and salts with ammonia and potassium are most preferable. These compounds can be used alone or in combination of two or more. The amount of these compounds used is not particularly limited, but is usually not more than 5 times the weight of the entire components (a) to (c) of the present invention. Further, in order to enhance the cleaning effect, functional water such as various alkaline solutions, ozone water, and redox water may be used in combination.

The cleaning agent for semiconductor parts of the present invention is mainly used for removing metal impurities based on abrasive particles remaining on semiconductor parts after CMP, but there is no particular limitation on the method of use. The following method can be adopted. Before or after performing the cleaning using the cleaning agent of the present invention, use of a known cleaning agent, or a known cleaning method such as immersion cleaning, paddle cleaning, spray cleaning, brush cleaning, or ultrasonic cleaning is performed. By doing so, it is possible to further increase the efficiency of removing metal impurities. Although the pH of the cleaning agent of the present invention is not particularly limited, it can be generally used at 1 to 12, preferably 2 to 10, and more preferably 3 to 9. Outside this range, the cleaning ability may be reduced or the metal portion may be corroded, which is not preferable. PH can be adjusted by appropriately selecting the type of counter ion species or by adding an acid or a base. For example, H ⁺ and ammonia ions (N
The pH can be adjusted by changing the ratio of an alkali component such as H ₃ ⁺ ). The working temperature is usually 5 to 50C.

The cleaning agent for semiconductor components of the present invention has a low environmental load, and has CMP abrasive grains such as silica and alumina remaining on the semiconductor components after chemical mechanical polishing.
Since it has a cleaning effect on impurities such as Fe, Mn, Al, Ce, Cu, W, and Ti based on metal impurities or metal wiring contained in CMP, semiconductors such as semiconductor substrates, interlayer insulating films, and metal wiring are provided. Useful for cleaning parts.

The semiconductor component cleaning agent of the present invention is used as a polishing aid in a polishing composition used for polishing surfaces of semiconductor components such as semiconductor substrates, recording medium components and optical components. Can also be used. As the abrasive, those commonly used as abrasive grains can be used as appropriate. As the polishing particle size, for example, diamond particles, alumina particles, silicon carbide (SiC) particles, magnesium oxide particles, cerium oxide particles, zirconium oxide particles, chromia (Cr ₂ O ₃ ) particles, fumed silica particles, colloidal silica particles, etc. Is mentioned. For polishing semiconductor substrates, recording medium substrates and optical components, etc.,
Among them, alumina particles, SiC particles, cerium oxide particles, zirconium oxide particles, fumed silica particles, colloidal silica particles, and the like are exemplified, and alumina particles, fumed silica particles, and colloidal silica particles are preferable. Among the alumina particles, γ-alumina particles, δ
-Alumina particles, θ-alumina particles, η-alumina particles and amorphous alumina particles are preferred. These may be used alone or in combination of two or more.

Generally, abrasive grains include a crushed type obtained by crushing large particles and classifying them into a desired particle size, and a spherical type formed by a colloid solution. As a crushing type, for example, in a wet slurry method, a fine particle is crushed by a fine crusher (such as a ball mill), and coarse particles are obtained by gravity sedimentation and centrifugal separation. In a dry method, a crushing and classification is performed by a jet stream. And the like. When compared at the same particle size, the crushed type has a larger specific surface area than the spherical type,
The polishing rate is also high. When polishing an interlayer insulating film or a metal film as the abrasive of the present invention, either type can be used, but a crushing type is preferred.

The average grain size of the abrasive grains is preferably 0.0
01-10.0 μm, more preferably 0.01-5.
0 μm, particularly preferably 0.02 to 3.0 μm.
If it is less than 0.001 μm, the polishing rate will be significantly reduced, while if it exceeds 10.0 μm, it will be difficult to maintain the flatness of the surface of the object to be polished. Further, abrasives having large and small particle sizes can be used in combination. The average particle size is obtained, for example, by measuring the particle size obtained by SEM observation or TEM observation.

The hardness of abrasive grains is determined by Knoop hardness (JIS
Z2251) is preferably 600 to 10,000, more preferably 1,000 to 5,000, and particularly preferably 1,500 to 3,000. Knoop hardness of 600
If the amount is less than the above, a sufficient polishing rate cannot be obtained, and the productivity is reduced. On the other hand, if it exceeds 10,000, the flatness of the surface of the object to be polished is reduced and the quality is deteriorated. The specific surface area of the abrasive grains is preferably 0.1 to 50 m ² / g, and the specific gravity is preferably 2 to 5, and more preferably 3 to 4. When the specific gravity is within this range, it is preferable in terms of handleability, dispersibility during polishing, and recovery and reuse.

The above abrasive is used as a slurry-like polishing composition together with a polishing aid. The mixing ratio of the abrasive in the polishing composition can be appropriately selected according to the viscosity of the polishing composition and the quality required for the object to be polished, but is preferably 0.01 to 40% by weight. More preferably 0.1 to 35% by weight, particularly preferably 1 to 30% by weight
It is. If it is less than 0.01% by weight, the desired polishing properties cannot be obtained, while if it exceeds 40% by weight, the viscosity of the composition becomes too high, which is not preferable.

When the polishing composition of the present invention contains a polishing aid comprising the semiconductor component cleaning agent of the present invention, the polishing effect increases and the polishing surface flatness increases.
The following reasons are considered. That is, the polishing aid is adsorbed to the polishing waste generated by polishing, the cohesive force acting between the polishing wastes is reduced, and the polishing wastes are uniformly dispersed in the polishing composition from the surface of the object to be polished. It is quickly removed, and the surface of the object to be polished always exposes a new surface. The abrasive is
By adsorbing the polishing aid, the dispersion is uniformly dispersed and maintained on the polishing pad surface, the amount of abrasive used for polishing increases, the load applied to each abrasive decreases, and the abrasive Acts uniformly on the surface of the object to be polished. Furthermore, the polishing aid comprising the semiconductor component cleaning agent of the present invention has high stability and can perform polishing even under high pressure conditions, so that the polishing rate can be increased.

The polishing aid of the present invention comprises (a) a (co) polymer having a carboxylic acid (salt) group, (b) a (co) polymer having a sulfonic acid (salt) group, and (c) a phosphonic acid. The semiconductor component cleaning agent contains at least two kinds of (co) polymers among the (co) polymers having a (salt) group. The amount of the polishing aid of the present invention to be used is preferably 0.001 to 10% by weight, more preferably 0.01 to 5% by weight in the polishing composition. If the amount is less than 0.001% by weight, sufficient polishing characteristics may not be obtained, whereas if the amount exceeds 10% by weight, the effect of addition is not improved and thus is not effective.

In the present invention, the relationship between the amounts of the abrasive and the polishing aid is determined by the ratio of the concentration of the abrasive and the polishing aid in the polishing composition [concentration of abrasive (% by weight) / amount of polishing aid]. Concentration (% by weight)], preferably 0.1 / 30 to 40 / 0.01,
More preferably, it is blended so as to be 1/20 to 30 / 0.1, particularly preferably 5/10 to 25/1. 0.1
If it is less than / 30, the polishing effect is reduced, while 4
If it exceeds 0 / 0.01, the effect of blending the polishing aid will not be sufficiently exhibited.

The solvent used in the polishing composition of the present invention is the above-mentioned water and / or hydrophilic organic solvent. Usually, a polishing aid composed of the above-mentioned cleaning agent for semiconductor components is mixed with a solvent and abrasive grains to obtain a slurry-like polishing composition. Examples of the solvent include the same solvents as those described above as the solvent used by dissolving the semiconductor component cleaning agent. The solvents can be used alone or in combination of two or more. The solid concentration in the polishing composition of the present invention is preferably 1 to 60% by weight, more preferably 5 to 40% by weight, and particularly preferably 10 to 30% by weight.
It is. If the solid content is less than 1% by weight, sufficient polishing properties may not be obtained, while if it exceeds 60% by weight, the effect of addition is not improved and it is not effective.

The pH of the polishing composition of the present invention is not particularly limited, but it can be generally 1 to 13, preferably 2 to 12, and more preferably 3 to 11. Outside this range, the polishing aid becomes unstable, the polishing ability may be reduced, or the metal portion may be corroded, which is not preferable. The adjustment of the pH can be performed in the same manner as the adjustment of the pH of the cleaning agent. The polishing composition of the present invention, in addition to the above polishing aid,
Known additives such as various thickeners, dispersants, and rust inhibitors can be added. These additives are preferably contained in the polishing aid of the present invention in an amount of 0 to 3% by weight.

The polishing composition of the present invention is mainly used for polishing semiconductor parts, recording medium parts and optical parts. Examples of the material of the object to be polished include metal films such as tungsten, copper, and aluminum used in the semiconductor manufacturing process, metals such as Ni-P plated aluminum alloys, silicon, glassy carbon materials, and the like. Examples include brittle materials such as glass and ceramics such as Al ₂ O ₃ .TiC. Examples of the glassy carbon material include those having a structure in which graphite is dispersed in a matrix of amorphous carbon.

The shapes of the objects to be polished include, for example,
Discs, plates, slabs, prisms, lenses, and various other shapes are available. In the polishing using the polishing composition of the present invention, the object to be polished is roughly polished (wrapped) to have a surface roughness of usually 0.01 to 1 μm, preferably 0.05 to 0.5 μm. Use things. The surface roughness in the present invention is the center line average roughness Ra, and is measured using a Tally 0 step manufactured by Rank Taylor Hobson.

The method for using the polishing composition of the present invention is not particularly limited, and a known method can be employed. For example,
Polishing can be performed with a double-side polishing machine 9B manufactured by SPEED FAM Co., Ltd. The processing pressure is usually 10 to 2,000
gf / cm ² , preferably 50 to 500 gf / cm ² ,
The processing time is usually 0.5 to 150 minutes, preferably 1 to 150 minutes.
The processing temperature is usually 5 to 70C, preferably 5 to 50C for 100 minutes. The polishing pad hardness (JIS
(According to K6301) is generally 86 to 99, preferably 88 to 95, because the harder the material, the higher the surface flatness. As a material of the polishing pad,
For example, a resin composite such as a resin such as a foamed polyurethane or a composite of a polyester nonwoven fabric and a polyurethane may be used. Further, the lower platen rotation speed is usually 5-1.
00 rpm, preferably 10 to 60 rpm, the flow rate of the polishing composition is usually 3 to 300 ml / min, preferably 10 to 300 ml / min.
~ 200 ml / min.

The polishing composition of the present invention comprises a semiconductor component such as a semiconductor substrate and an interlayer insulating film, and a brittle material such as a glassy carbon substrate, a glass substrate, and a ceramic substrate.
Suitable for chemical mechanical polishing (CMP) of recording medium parts and optical parts, the surface of the object to be polished can be flattened, and the polishing rate can be increased. In the present invention, "substrate"
Is not limited to a shape having a flat portion, but also includes a shape having a curved portion.

[0062]

EXAMPLES Hereinafter, the present invention will be described more specifically with reference to examples, but the present invention is not limited to the following examples. The percentages and parts in the examples are on a weight basis unless otherwise specified. Various measurements in the examples were performed as follows.

Weight Average Molecular Weight The weight average molecular weight (Mw) is a value determined by gel permeation chromatography (GPC) and converted using a calibration curve prepared using sodium polystyrene sulfonate as a standard sample. here,
The GPC measurement conditions are as follows. Column: G3000PWXL [manufactured by Tosoh Corporation] Column: GMPWXL [manufactured by Tosoh Corporation] Column: GMPWXL [manufactured by Tosoh Corporation] The columns are connected in series in the order of 〜, and a sample is introduced from the column side. Detector: Differential refractometer RI-8021 [manufactured by Tosoh Corporation] Eluent: water / acetonitrile / sodium sulfate = 2,1
00/900/15 (weight ratio) Flow rate; 1.0 ml / min Temperature; 40 ° C. Sample concentration; 0.2% Sample injection volume; 400 μl

[0064] The copper film-coated wafer substrate of 2.5 inches in diameter The surface roughness was 0.1μm by polishing rough polishing with the polishing composition, it was polished by a double-side polishing machine. The surface roughness (center line average roughness Ra) of the object to be polished was measured using a Tally 0 step manufactured by Rank Taylor Hobson. The processing conditions are as follows. Double-side polishing machine: LGP-510, Model LGP-510 Processing pressure: 150 gf / cm ² Processing time: 2 minutes Processing temperature: 25 ° C. Polishing pad hardness: 90 (based on JIS K6301) Lower platen rotation speed: 50 rpm For polishing Composition flow rate: 50 ml / min

Polishing rate The wafer substrate with a copper film was polished under the same conditions as above, and the polishing rate (μm / min) was determined by the following equation (IV). Polishing rate (μm / min) = [thickness of copper film before polishing (μm) −thickness of copper film after polishing (μm)] / polishing time (minutes) (IV) The thickness (μm) of the film is determined by measuring the sheet resistance by a direct current four-probe method using a resistivity measuring machine (manufactured by NPS, model Σ-5), and from the sheet resistance value and the resistivity of copper, the following formula is used. (V). Thickness of copper film (μm) = [sheet resistance value (Ω / cm ² ) × resistivity of copper (Ω / cm ² )] × 10 ⁴ (V)

[0066] Using the number of scratches optical microscope, the surface of the substrate was polished with 50 magnifications, 6 points observed at intervals of 60 degrees, to determine the number of scratches. The depth of the scratch is Zygo's Zyg
Measured at o. The evaluation criteria are as follows. ：: Less than 0.5 scratches having a depth of 0.05 μm or more in one visual field. Δ: 0.5 to 1 scratches having a depth of 0.05 μm or more in one visual field. ×: Scratch having a depth of 0.05 μm or more is 1 in one visual field.
Beyond books.

Reference Example 1 A solution prepared by dissolving 500 g of an aqueous solution of acrylic acid having a concentration of 20% and 14 g of a 35% aqueous hydrogen peroxide solution was stirred under reflux in a 2 liter container containing 1,000 g of water. The solution was dropped evenly over 10 hours. After completion of the dropwise addition, the mixture was kept under reflux for 2 hours, and then neutralized with an aqueous ammonia solution to change the counter ion to (NH ₃ ⁺ ), thereby obtaining an ammonium salt of an acrylic acid polymer (A). The weight average molecular weight of the polymer (salt) was 20,000.

REFERENCE EXAMPLE 2 In Reference Example 1, a 50% aqueous solution of acrylic acid having a concentration of 20% was prepared.
The same procedure as in Reference Example 1 was carried out except that 0 g was changed to 500 g of a 20% aqueous solution of acrylamido-2-methylpropanesulfonic acid to obtain an ammonium salt (B) of a polymer of acrylamido-2-methylpropanesulfonic acid. Was.
The weight average molecular weight of the polymer (salt) was 18,000.

REFERENCE EXAMPLE 3 In Reference Example 1, a 50% aqueous solution of acrylic acid having a concentration of 20% was used.
The procedure was carried out in the same manner as in Reference Example 1 except that 0 g was changed to 500 g of a 20% aqueous solution of itaconic acid and the counter ion was changed to (H ⁺ ) to obtain an itaconic acid polymer (C). The weight average molecular weight of the polymer was 3,000.

REFERENCE EXAMPLE 4 The same procedure as in Reference Example 1 was carried out except that a 20% concentration aqueous acrylic solution 500
Reference Example 1 except that g was changed to 500 g of a 20% styrene sulfonic acid aqueous solution and the counter ion was changed to (H ⁺ ).
And a styrene sulfonic acid polymer (D) was obtained. The weight average molecular weight of the polymer was 14,000.

REFERENCE EXAMPLE 5 In Reference Example 1, a 50% aqueous solution of acrylic acid having a concentration of 20% was used.
Reference Example 1 except that 0 g was changed to 500 g of a 20% aqueous solution of vinylphosphonic acid and the counter ion was changed to (H ⁺ ).
And a vinylphosphonic acid polymer (E) was obtained. The weight average molecular weight of the polymer was 3,000.

Reference Example 6 A styrene / isoprene (2
0/80 mol ratio) 100 g of random copolymer was charged,
Dissolved in 1 liter of dioxane. After dissolution, sulfuric anhydride /
The dioxane complex (85 g / 500 g) was heated to 25 ° C.
, And the mixture was stirred at 25 ° C for 1 hour. Thereafter, water and ammonia are added to change the counter ion to (NH ₃ ⁺ ), the solvent and the like are removed, and an ammonium salt of a sulfonated styrene / isoprene (20/80 molar ratio) random copolymer (F) I got The weight average molecular weight of the copolymer (salt) was 20,000.

Examples 1 to 7 A silicon wafer with a SiO ₂ film was prepared by
It was immersed in a 3% Fe (NO ₃ ) ₂ aqueous solution and a 3% CuSO ₄ aqueous solution sequentially for 3 minutes, washed lightly with water, and subjected to contamination treatment.
This contaminated silicon wafer with a SiO ₂ film was transferred to a total reflection X-ray fluorescence device (device name: TREX-6) manufactured by Technos Corporation.
10T), the concentrations of Cu, Fe, and K on the wafer surface were measured. The surface concentration of Cu is 100 × 10 ¹⁰ (atoms /
cm ² ), and the surface concentration of Fe is 15,000 × 10
¹⁰ (atoms / cm ² ), the surface concentration of K is 90 × 10
¹⁰ (atoms / cm ² ). Next, the polymers (salts) (A to F) of Reference Examples 1 to 6 were contained in the proportions (ratio) shown in Table 1 at a total concentration of 2% and the phosphonic acid compounds shown in Table 1 at a concentration of 0.2%. An aqueous solution was prepared as a washing solution. The concentrations shown in Table 1 are the concentrations (%) of the cleaning liquid. Contaminated SiO
_The silicon wafer with the _two films is washed in a cleaning solution at 40 ° C. for 3 minutes, washed with water, dried, and then Cu, Fe, K
Was measured, and the ability to remove Cu, Fe, and K was evaluated. Table 1 shows the results.

Comparative Example 1 The procedure of Example 1 was repeated, except that no phosphonic acid compound was used. Table 1 shows the results.

Comparative Example 2 The same procedure was performed as in Example 7, except that the components (a) to (c) of the present invention were not used. Table 1 shows the results. As shown in Table 1, the cleaning agent of the present invention has a higher C content than the comparative example.
It can be seen that the ability to remove u, Fe, and K and the ability to remove particles are excellent.

[0076]

[Table 1]

Examples 8 to 14 Alumina abrasive grains (trade name: AKP10-α alumina, manufactured by Sumitomo Chemical Co., Ltd.) (purity: 99.9%, average particle size: 1.0 μm, specific surface area: 2.0 m ² ) as an abrasive / G) at the concentrations shown in Table 2 and 6.7% aqueous hydrogen peroxide based on the polishing composition at a concentration of 30%, and the polymers (salts) (A) of Reference Examples 1 to 6 were used.
To F) and, if necessary, a phosphonic acid compound at a ratio (ratio) shown in Table 2 so that the total concentration was 1%, followed by stirring to obtain a polishing composition. The amounts shown in Table 2 are concentrations (%) based on the polishing composition containing water as a solvent. PH was 4-10. Using the above polishing composition, polishing was performed with a double-side polishing machine. The polished substrate was washed with a cleaning liquid, and the polished surface was evaluated. Table 2 shows the results.

Comparative Example 3 The same operation as in Example 9 was carried out except that no phosphonic acid compound was used. Table 2 shows the results.

Comparative Example 4 The same operation as in Example 11 was carried out except that the (co) polymer (salt) was not used. Table 2 shows the results. As shown in Table 2, when the polishing composition of the present invention is used, the polishing rate can be increased while the number of scratches on the object to be polished is low and the flatness is maintained.

[0080]

[Table 2]

In the above example, when the polishing composition of the present invention was used for polishing, the surface roughness of the object to be polished was low.
In addition, the polishing rate could be increased. In addition, the polishing composition of the present invention had a stable dispersion of the abrasive, was excellent in fluidity, and was excellent in handleability. Furthermore, the clogging of the polishing pad was small, and the frequency of cleaning and replacement of the polishing pad was reduced.

[0082]

According to the present invention, when a semiconductor component is cleaned using the cleaning agent for a semiconductor component of the present invention, the environmental load is reduced, and metal impurities remaining on the semiconductor component after chemical mechanical polishing are efficiently removed. Can be removed. Further, the polishing composition of the present invention is a semiconductor substrate, a semiconductor component such as an interlayer insulating film, a glassy carbon substrate, a glass substrate, a brittle material such as a ceramic substrate, such as recording medium components and optical components. Suitable for chemical mechanical polishing (CMP), the surface roughness of the object to be polished is low, and the polishing rate can be increased.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) C11D 7/34 C11D 7/34 7/36 7/36 H01L 21/304 622 H01L 21/304 622Q 622D 647 647A // C11D 3/14 C11D 3/14 3/37 3/37 (72) Inventor Toshio Ono 2-11-24 Tsukiji, Chuo-ku, Tokyo Inside JSR Corporation (72) Inventor Katsuhiro Ishikawa Chuo-ku, Tokyo Tsukiji 2-chome No.11-24 JSR Co., Ltd. F term (reference) 4H003 BA12 DA15 DA16 DB01 EB24 EB28 EB30 ED02 FA03 FA05

Claims (8)

[Claims] (1) a (co) polymer having a carboxylic acid (salt) group, (b) a (co) polymer having a sulfonic acid (salt) group, and (c) a phosphonic acid (salt) group. A cleaning agent for a semiconductor component containing at least two kinds of (co) polymers among the (co) polymers having the same. 2. The cleaning agent according to claim 1, further comprising a phosphonic acid compound. 3. The cleaning agent for semiconductor parts according to claim 1, which is used for cleaning semiconductor parts before and after chemical mechanical polishing. 4. A method for cleaning a semiconductor component, comprising cleaning the semiconductor component using the cleaning agent for a semiconductor component according to claim 1. 5. A polishing composition comprising at least an abrasive and a polishing aid comprising the semiconductor component cleaning agent according to claim 1 or 2. 6. The polishing composition according to claim 5, further comprising a solvent. 7. The polishing composition according to claim 5, which is used for chemical mechanical polishing. 8. A polishing method characterized by polishing an object to be polished using the polishing composition according to claim 5 or 6.