JP2001060556A - Heating apparatus for plasma treatment apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a heating apparatus for plasma apparatus in which the problems of the workability, weight and manufacturing cost are solved. SOLUTION: This heating apparatus for plasma treatment apparatus heats two substrates in it, when a generated plasma decomposes a reactive gas to form a film on the substrate or to etch it. It has a bottomed rectangular cylindrical container cover 9, a heater element 7 hosed in the container cover and a lid cover 11 welded so as to close the opening of the container cover and comprises two one-side heat type heaters 8, having heating surfaces at the container cover and a holder 15 for holding the two heaters 8 opposed accross a space in-between for their heating surfaces 13 to face outward and the non- heating surfaces to face inward.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heater device for heating a substrate in a plasma CVD apparatus or a plasma etching apparatus when a reactive gas is decomposed and reacted by generated plasma to form or etch a substrate.

[0002]

2. Description of the Related Art In a plasma CVD apparatus, a heater unit (heater unit) and an electrode / gas unit are opposed to each other.
A substrate is held by a heater device, a reactive gas is supplied between the substrate and the electrode, a high frequency is applied to the electrode to generate plasma, and a film is formed on the substrate. During the film formation, the substrate is heated by a heater device to accelerate the film formation reaction. For the heater device, for example, a heater element composed of a resistance heating element is used. When the heater element is exposed to a plasma atmosphere generated in the apparatus, there is a risk that abnormal heating and disconnection may occur due to the influence of the plasma. In order to prevent abnormal heating disconnection of the heater element, the heater element is housed in a box-shaped closed container, and power is supplied under atmospheric pressure to control heat generation.

As such a heater device, FIG.
The structure shown in FIG. That is, as shown in FIG. 10, the heater device has a rectangular sheet shape, and a double-sided heater device main body 41 having both surfaces to be heated.
And a rib-type hanging fixture 42 fixed to the upper surface of the double-sided heater main body 41 and attached to the ceiling of the film forming unit of the plasma CVD apparatus. As shown in FIG. 11, the double-sided heater device main body 41 fixes the heater elements 43a and 43b respectively on the upper inner surface and the lower inner surface of a long box-shaped metal container 42 having an opening on the short side surface, It is obtained by welding a metal lid 44 to the opening of the container 42. The leg length of the welding portion 45 is:
In order to withstand the pressure difference between the inside and outside of the container while being affected by the heat generated from the two heater elements, for example, 8 m
Take as large as m. Further, the inside of the container 42 is in an atmospheric pressure state, and power is supplied to the heater elements 43a and 43b in this state.

However, in such a double-sided heater device, when the size of the processing substrate is increased in accordance with the increase in the size of the processing substrate, the closed plate is prevented from being deformed by the pressure difference between the inside and outside of the heater device. It is necessary to increase the thickness. As a result, workability and weight increase become problems, and increase in manufacturing cost becomes a big problem.

[0005]

SUMMARY OF THE INVENTION It is an object of the present invention to provide a heater for a plasma processing apparatus in which the problems of workability, weight and manufacturing cost have been solved.

[0006]

SUMMARY OF THE INVENTION A heater for a plasma processing apparatus according to the present invention is a plasma processing apparatus for heating two substrates when a reactive gas is decomposed and reacted by generated plasma to form or etch a substrate. A heater device for a container having a bottomed rectangular cylindrical container cover, a heater element housed in the container cover, and a lid cover welded to close an opening of the container cover, and Two single-sided heating type heaters in which the cover is a heating surface; holding the two single-sided heating type heaters with the heating surfaces facing outward, the non-heating surfaces facing inward, and separated from each other. And a holding member for the

According to the heater device having such a configuration, the number of heater units accommodated in the container cover of the one-sided heating type heater can be reduced to one, so that the thickness of the cover can be greatly increased. Therefore, the size can be increased. As a result, it is possible to provide a heater device that is easy to process, lightweight, and has low manufacturing costs.

In the heater device for a plasma processing apparatus according to the present invention, it is preferable that the container cover and the lid cover are formed of a non-magnetic conductive material (for example, a non-magnetic metal). Specifically, SUS316 and the like can be given.

In the heater device for a plasma processing apparatus according to the present invention, it is desirable to provide a stud in each single-sided heating type heater. With such a configuration,
It is possible to prevent the container cover or the lid cover from being deformed by the pressure difference between the inside and outside of the container while receiving the heat generated from the heater element.

[0010] In the heater device for a plasma processing apparatus according to the present invention, the lid cover is welded to the container cover on a side surface of the container cover away from the heating surface, thereby receiving the heat generated from the heater element. By adopting a structure that easily withstands a pressure difference between the inside and outside of the container, it is possible to prevent the sealability of the cover from being impaired. As a result, the leg length of the welded portion can be shortened, so that the heater unit can be easily disassembled and repaired when it breaks down.

[0011] In the heater device for a plasma processing apparatus according to the present invention, the container cover is formed so as to be able to withstand a pressure difference between the inside and the outside of the container as a structure for fitting the lid cover away from the heating surface, thereby generating a welded portion. Therefore, the main surface can be seal-welded to the lid cover, the leg length of the welded portion can be further reduced, and the disassembly and repair can be further facilitated.

In the heater device for a plasma processing apparatus according to the present invention, when the thickness of the vessel is about 10 mm, it is desirable that the leg length of the welded portion is 6 mm or less.
If the leg length exceeds 8 mm, it may be difficult to easily perform disassembly and repair when the heater element fails. A more preferred range is 4 mm or less.

Further, in the heater device for a plasma processing apparatus according to the present invention, the holding member is disposed between the two single-sided heating type heaters, and both ends are opposed to the two single-sided heating type heaters. At least one support arm constrained at one or more places on the surface, and when the one-sided heating type heater thermally expands, a part of the constrained portion is displaced to thermally deform the container cover or the lid cover. It is preferable to have a thermal deformation preventing mechanism for preventing deformation of the heater fixing position due to the above.

According to the heater device having such a configuration, the problems of workability, weight, and cost can be solved. In addition, when the container cover or lid cover of the single-sided heating type heat-expands, the single-sided heating type heater can be used. Because part of the restrained portion between the and the support arm is displaced following the thermal expansion, thermal deformation in the surface direction of the container cover or the lid cover can be absorbed, and the thickness of the container cover or the lid cover can be reduced in the thickness direction. The deformation of the position of the restraint support portion due to the thermal deformation of the member can be suppressed.

The present invention also relates to a heater device for a plasma processing apparatus for heating two substrates when forming or etching a substrate by decomposing and reacting a reactive gas by generated plasma. A plurality of single-sided heaters having a cover, a heater element housed in the container cover and a lid cover welded to close an opening of the container cover, and wherein the container cover is a heating unit; A heat equalizing plate to which the heating portion of each of the single-sided heating type heaters is fixed on one surface, and two substrate heating means in which the one-sided heating type heater non-fixed surface of the heat equalizing plate is a heating surface; Holding means for holding the two substrate heating means, wherein the heating surfaces face outward, the non-heating surfaces face inward, and are spaced apart from each other and held face-to-face. It is intended.

According to the heater device having such a configuration, it is possible to increase the size of the heater device without increasing the size of the single-sided heating type heater itself. Can be provided. Also,
It is possible to remove a part of the one-sided heating type heater fixed to the soaking plate of the substrate heating means, and to repair or newly replace this heater alone.

In the heater apparatus for a plasma processing apparatus according to the present invention, it is preferable that the number of single-sided heating type heaters fixed to each of the heat equalizing plates is 3 to 10.

In the heater apparatus for a plasma processing apparatus according to the present invention, the container cover and the lid cover of each of the single-sided heaters may be formed of a non-magnetic conductive material (for example, a non-magnetic metal). desirable. Specifically, SUS316 and the like can be given.

In the heater device for a plasma processing apparatus according to the present invention, it is desirable to provide a stud in each one-side heating type heater. With such a configuration,
It is possible to prevent the container cover or the lid cover from being deformed by the pressure difference between the inside and outside of the container while receiving the heat generated from the heater element.

[0020] In the heater device for a plasma processing apparatus according to the present invention, the lid cover is welded to the container cover at a side surface of the container cover away from the heating surface to receive the heat generated from the heater element. The structure can withstand the pressure difference between the inside and the outside of the container, and the sealing performance of the cover can be prevented from being impaired. as a result,
Since the leg length of the welded portion can be shortened, it is possible to realize a heater device that can easily perform disassembly and repair when the heater unit breaks down.

In the heater device for a plasma processing apparatus according to the present invention, the lid is separated from the heating surface by providing a structure for fitting the lid cover therein to reduce stress on a welded portion, so that the lid cover is formed on the main surface. , The length of the leg of the welded portion can be further shortened, and disassembly and repair can be further facilitated.

In the heater device for a plasma processing apparatus according to the present invention, it is desirable that the leg length of the welded portion is 6 mm or less when the thickness of the container is about 10 mm. If the leg length exceeds 8 mm, it may be difficult to easily perform disassembly and repair when the heater element fails.
A more preferred range is 4 mm or less.

Further, in the heater device for a plasma processing apparatus according to the present invention, the holding member is disposed between the two substrate heating means, and both ends of the holding member are respectively provided on surfaces facing the substrate heating means. At least one support arm constrained at one or more locations, and a part of the constrained portion is displaced when the substrate heating means thermally expands, thereby preventing at least the positional relationship between the constrained portion of the heat equalizing plate and deformation. It is preferable to have a thermal deformation prevention mechanism for performing the operation.

According to the heater device having such a configuration, the problems of workability, weight, and cost can be solved. In addition, when the substrate heating means thermally expands, the restrained portion between the substrate heating means and the support arm is reduced. Some of them are displaced following the thermal expansion, so that the thermal deformation in the plane direction of the substrate heating means can be absorbed, and at least the thermal deformation in the thickness direction of the soaking plate and the positional relationship between the restrained part and the deformation. Can be suppressed.

[0025]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Various preferred embodiments of the present invention will be described below with reference to the drawings.

First, an example of a plasma CVD apparatus in which a heater device according to the present invention is incorporated will be described with reference to FIG. FIG. 1 is a perspective view showing an outline of a film forming unit of a plasma CVD apparatus in which a heater device according to the present invention is incorporated.
FIG. 2 is a perspective view schematically showing the internal structure of the film forming unit.

As shown in FIGS. 1 and 2, the plasma CV
A heater unit 7 is provided as a heater device that is in contact with the film forming unit 2 of the device D, and thereby the glass substrate G can be heated up to 500 ° C. The loaded substrate G is pressed against and held by the heater unit 7 by a positioner (not shown) having a pressing plate, for example.

In the film forming unit 2, the electrode 3 / gas unit 4 faces the substrate G held by the heater unit 7. The film forming unit 2 includes a ladder electrode 3 connected to a high-frequency power supply and a gas supply mechanism 4 connected to a process gas supply source. The ladder electrode 3 and the substrate G are arranged facing each other at a predetermined interval. When a process gas is supplied from the gas supply mechanism 4 between the electrode 3 and the substrate G while heating the substrate G by the heater unit 7 and a high frequency is applied to the ladder electrode 3, plasma is generated between the electrode 3 and the substrate G. Thus, a film is formed on the substrate G.

(First Embodiment) A first embodiment of the present invention will be described with reference to FIGS.

FIG. 3 is a perspective view showing a heater device for a plasma processing apparatus according to the first embodiment of the present invention, and FIG. 4 is a partial cross-sectional view showing a one-side heating type heater incorporated in the heater device of FIG.

The heater unit 7 includes two single-sided heaters 8. Each single-side heating type heater 8 is, for example, SU
A long box-shaped container cover 9 made of S316, a heater element 10 made of, for example, a resistance heating element fixed to the bottom inner surface of the container cover 9, and a rectangular plate made of, for example, SUS316 welded to the opening of the container cover 9 Cover 11. When the thickness of the heating surface 13 is about 10 mm, the leg length of the welded portion 12 is set to, for example, 6 mm. In each single-sided heater 8, the bottom surface of the container cover 9 serves as a heating surface 13. Two single-sided heaters 8
Are vertically arranged with their short side faces down, and face each other with a gap. The heating surfaces 13 of the two single-sided heaters 8 face outward. A rectangular plate-like arm 15 having rectangular holding plates 14a, 14b (14b not shown) at both ends is disposed between two single-sided heating type heaters 8, and the holding plate 14a is connected to one of the single-sided heating type heaters 8. , And the holding plate 14b is fixed to the other single-sided heater 8 by bolts. The arm 15 has a rib-shaped hanging jig 1 on its upper surface.
6 is attached. The hanging jig 16 is fixed to a ceiling of a film forming chamber (not shown) of the plasma CVD apparatus.

According to the heater unit having such a configuration, the number of heater units 10 housed in the container cover 9 can be reduced to one, so that the size of the cover can be increased without increasing the thickness of the cover. Can be planned. As a result, it is possible to provide a heater unit that is easy to process, lightweight, and has low manufacturing costs.

The cover 11 is connected to the heating surface 13.
Side of the container cover 9 away from the container cover 9
By welding, it is possible to prevent the sealing performance of the cover from being impaired by the heat generated from the heater element. As a result, the leg length of the welded portion 12 can be shortened, so that the heater unit can be easily disassembled and repaired when it breaks down.

(Second Embodiment) A second embodiment of the present invention will be described with reference to FIG.

FIG. 5 is a partial sectional view showing a one-sided heating type heater incorporated in a heater for a plasma processing apparatus according to a second embodiment of the present invention.

The heater unit 7 according to the second embodiment has a configuration similar to that of the above-described first embodiment except that a heater having the structure shown in FIG. It is.

Each single-side heating type heater 8 is, for example, SUS3
16, a long box-shaped container cover 17 whose upper end is bent inward, a heater element 10 made of, for example, a resistance heating element fixed to the bottom inner surface of the container cover 17, and SUS316, for example, and A rectangular plate-shaped lid cover 20 having a step portion 19 that fits into the bent portion 18 of the container cover 17 is provided. The container cover 17
The boundary between the bent portion 18 and the lid 20 is, for example, seal-welded. The leg length of the welding portion 21 is set to, for example, 4 mm. In each single-sided heater 8, the bottom surface of the container cover 17 serves as the heating surface 13.

According to the heater unit having such a configuration, it is possible to solve the problems of workability, weight, and manufacturing cost, and to suppress a decrease in the tightness of the cover due to heat generated from the heater element 10. In addition, since the stress generated in the welded portion by the pressure difference between the inside and outside of the container is reduced by fitting the lid 20 into the container cover 17, seal welding can be adopted.
The leg length of the welded portion 21 can be further shortened, and disassembly and repair can be further facilitated.

(Third Embodiment) A third embodiment of the present invention will be described with reference to FIG.

FIG. 6 is a partial perspective view showing a heater for a plasma processing apparatus according to a third embodiment of the present invention.

The heater unit 7 has two substrate heating means (one not shown). Each substrate heating unit includes a rectangular plate-shaped soaking plate 22 made of, for example, SUS316, and four small single-sided heating type heaters 8 fixed to one surface of the soaking plate 22. Each of the small single-sided heaters 8
Has the same configuration as that described in the first or second embodiment except that the size is small. The heating surface 13 of each of the small single-sided heaters 8 is fixed to the soaking plate 22. In the substrate heating means having such a structure, the surface on which the single-sided heating type heater 8 is not fixed is the heating surface 23. The two substrate heating means face each other with a gap. Further, the heating surfaces 23 (one not shown) of the two substrate heating means face outward, respectively. A rectangular plate arm 15 having rectangular holding plates 14a and 14b (14b not shown) at both ends is disposed between two substrate heating means, and the holding plate 14a is a single-sided heating type of one of the substrate heating means. The holding plate 14b is fixed to the heater fixing surface with bolts, and the holding plate 14b is fixed to the one-side heating type heater fixing surface of the other substrate heating means with bolts. Also,
The arm 15 has a rib-type hanging jig (not shown) attached to an upper surface thereof. The hanging jig includes:
It is fixed to the ceiling of the film forming chamber of the plasma CVD apparatus.

According to the heater unit having such a configuration, the size of the heater device can be increased without increasing the size of the single-sided heating type heater 8 itself, and the heater unit can be easily processed, is lightweight, and has a low manufacturing cost. Can be provided. Further, a part of the single-sided heating type heater 8 fixed to the heat equalizing plate 22 of the substrate heating means is removed, and the heater 8 is removed.
It is possible to perform repairs or new replacements only for the above.

(Fourth Embodiment) A first embodiment of the present invention will be described with reference to FIGS.

FIG. 7 is a perspective view showing a heater device for a plasma processing apparatus according to a fourth embodiment of the present invention, and FIG. 8 is a main part showing an attached state of an upper arm and a one-sided heating type heater in the heater device of FIG. FIG. 9 is an enlarged sectional view of a main part showing an attached state of the lower arm and the one-sided heating type heater in the heater device of FIG.

The heater unit 7 has two one-sided heating type heaters 8. Each single-sided heater 8 has a configuration similar to that described in the first or second embodiment. The two single-sided heaters 8 are vertically arranged with their short sides facing down, and face each other with a gap therebetween. Heating surface 13 of two single-sided heaters 8
Are facing outward. The rectangular plate-shaped upper arm 24 has rectangular holding plates 25a and 25b (25b not shown) at both ends. A round hole 26 is opened at the center of each of the holding plates 25a and 25b. In each of the holding plates 25a and 25b, two long holes 27 are opened at regular intervals on the left and right of the round hole 26.
Each elongated hole 27 has a shape that is long along the longitudinal direction of the holding plate. The two single-sided heaters 8 each have a circular groove 28 formed in the upper central portion of the surface facing each other with a gap therebetween, and fix the bolt 30. In each of the surfaces, circular grooves 29 are formed on the left and right of the circular groove 28 at regular intervals. The two fixing bolts 30 are respectively inserted into the circular grooves 28 of the single-sided heating type heaters 8 from the round holes 26 of the holding plates 25a and 25b, and the holding plates 25 at both ends of the upper arm 24.
The single-sided heater 8 is fixed to a and 25b. The fixing bolt 30 is always at a fixed position. The four movable bolts 31 are respectively inserted into the circular grooves 29 of the single-sided heaters from the elongated holes 27 of the holding plates 25a and 25b, and the holding plates 25 at both ends of the upper arm 24.
The single-sided heating type heater 8 is semi-restricted to a and 25b.

On the other hand, the rectangular plate-like lower arm 32 has rectangular holding plates 33a, 33b at both ends (33b is not shown).
Having. Each of the holding plates 33a and 33b has an elongated hole 34 which is long in the longitudinal direction of the holding plate. The two single-sided heating type heaters 8 each have a circular groove 35 formed in the single-sided heating type heater 8 at the lower central portion of the surfaces facing each other with a gap therebetween. The two movable bolts 36 are connected to the respective holding plates 33.
The single-sided heating type heaters 8 are inserted into the circular grooves 35 of the single-sided heating type heaters 8 from the long holes 34 of the single-sided heating type heaters 8a and 33b respectively, and the single-sided heating type heaters 8 are half-restricted to the holding plates 33a and 33b at both ends of the lower arm 32. The upper arm 24 has a rib-shaped hanging jig 16 attached to the upper surface thereof. The hanging jig 16 is fixed to a ceiling of a film forming chamber of the plasma CVD apparatus.

According to the heater unit having such a configuration, in addition to solving the problems of workability, weight, and cost, heat in the thickness direction of the container cover or lid cover of each single-sided heating type heater 8 can be obtained. Deformation can be suppressed. That is, when the container cover or lid cover of the single-sided heater 8 thermally expands along the width in the longitudinal direction, each movable bolt 31 is displaced in the elongated hole 27 and the circular groove 29 following this thermal expansion. In addition, thermal deformation of the container cover or the lid cover along the longitudinal width can be absorbed. When the container cover or lid cover of the single-sided heating type heater 8 thermally expands in the height direction, the movable bolt 36 is displaced in the elongated hole 34 and the circular groove 35 following this thermal expansion. Thermal deformation along the height direction of the cover or the lid cover can be absorbed. As a result, thermal deformation of the container cover or the lid cover in the plate thickness direction is locally and entirely prevented, the flatness of the heating surface is maintained, and the deformation of the positional relationship with the holding plate can be prevented.

In this embodiment, only one portion of the central portion of the single-sided heater is restricted, and the other portion is in a semi-restricted state or in a free state. In addition, deformation caused by heat shrinkage during cooling can be effectively prevented. Since the deformation of the container cover / lid cover at the time of cooling causes a completely different deformation from that at the time of heating, the container cover / lid cover of the present embodiment is particularly effective in preventing such heat shrinkage deformation.

In the fourth embodiment according to the present invention, the same effect can be obtained by using the substrate heating means described in the third embodiment in place of the one-sided heater 8. In this case, a groove for restraining the arm is formed on the heat equalizing plate 22 instead of the single-sided heater 8.

Further, when the holding plates 14a and 14b of the arm 15 in the first embodiment according to the present invention are provided with a thermal deformation preventing mechanism as in the fourth embodiment, problems of workability, weight and cost can be solved. Besides, it is possible to prevent the container cover 9 or the lid cover 11 of the single-sided heater 8 from being thermally deformed.

[0051]

As described above in detail, according to the present invention, it is possible to provide a heater for a plasma processing apparatus in which the problems of workability, weight and cost are improved. The heater device for a plasma processing apparatus according to the present invention has a size of one.
It is particularly suitable for heating a large-sized substrate exceeding 000 mm × 1000 mm.

[Brief description of the drawings]

FIG. 1 is a perspective view showing an outline of a film forming unit of a plasma CVD apparatus in which a heater device according to the present invention is incorporated.

FIG. 2 is a perspective view schematically showing an internal structure of a film forming unit of the plasma CVD apparatus of FIG.

FIG. 3 is a perspective view showing a heater device for a plasma processing apparatus according to the first embodiment of the present invention.

FIG. 4 is a partial cross-sectional view showing a one-sided heating type heater incorporated in the heater device of FIG. 3;

FIG. 5 is a partial cross-sectional view showing a one-side heating type heater incorporated in a heater for a plasma processing apparatus according to a second embodiment of the present invention.

FIG. 6 is a partial perspective view showing a heater device for a plasma processing apparatus according to a third embodiment of the present invention.

FIG. 7 is a perspective view showing a heater device for a plasma processing apparatus according to a fourth embodiment of the present invention.

FIG. 8 is an enlarged sectional view of a main part showing a mounting state of an upper arm and a one-sided heating type heater in the heater device of FIG. 7;

9 is an enlarged sectional view of a main part showing a mounting state of a lower arm and a one-sided heating type heater in the heater device of FIG. 7;

FIG. 10 is a perspective view showing a conventional heater device for a double-sided plasma processing apparatus.

FIG. 11 is a partial sectional view showing the heater device main body of FIG. 10;

[Explanation of symbols]

 7: Heater element, 8: Single-sided heating type heater, 9: Container cover 11: Lid cover, 13: Heating surface, 14a: Holding plate, 15: Arm, 16: Hanging jig, G: Substrate

Claims (8)

[Claims] 1. A heater device for a plasma processing apparatus, which heats two substrates when a reactive gas is decomposed and reacted by generated plasma to form or etch a substrate, wherein the container cover has a bottomed rectangular cylindrical shape, Two single-sided heating heaters having a heater element housed in the container cover, and a lid cover welded to close an opening of the container cover, and the container cover being a heating surface; A plasma processing apparatus comprising: a holding member for holding two single-sided heating type heaters, each of which has the heating surface facing outward, the non-heating surface facing inward, and is spaced apart from each other to face each other. Heater device. 2. The heater device for a plasma processing apparatus according to claim 1, wherein the lid cover is welded to the container cover at a side surface of the container cover away from the heating surface. 3. The heater device for a plasma processing apparatus according to claim 1, wherein the container cover is seal-welded to the lid cover at a main surface of the lid cover remote from the heating surface. 4. The at least one holding member is disposed between the two single-sided heating type heaters, and both ends are restrained at one or more places on opposing surfaces of the two single-sided heating type heaters. A single support arm, and a thermal deformation preventing mechanism for preventing thermal deformation of the container cover or the lid cover by displacing a part of the restrained portion when the one-sided heating type heater thermally expands. The heater device for a plasma processing apparatus according to claim 1, wherein: 5. A heater device for a plasma processing apparatus for heating two substrates when a reactive gas is decomposed and reacted by generated plasma to form or etch a substrate, wherein the container cover has a bottomed rectangular cylindrical shape, and the container is A plurality of single-sided heaters having a heater element housed in the cover and a lid cover welded to close an opening of the container cover, wherein the container cover serves as a heating unit; A heat equalizing plate to which the heating portion of each of the single-sided heating type heaters is fixed, and two substrate heating means in which the one-sided heating type heater non-fixed surface of the heat equalizing plate is a heating surface;
A holding member for holding the two substrate heating means, the heating surfaces facing outward, the non-heating surfaces facing inward, and spaced apart from each other to hold the two substrates. apparatus. 6. The heater device for a plasma processing apparatus according to claim 5, wherein the lid cover is welded to the container cover at a side surface of the container cover away from the heating surface. 7. The heater device for a plasma processing apparatus according to claim 5, wherein the container cover is seal-welded to the lid cover at a main surface of the lid cover remote from the heating surface. 8. The at least one holding member, which is disposed between the two substrate heating means and whose both ends are restrained at one or more locations on surfaces facing the two substrate heating means, respectively. And a thermal deformation preventing mechanism for preventing at least a thermal deformation of the heat equalizing plate by displacing a part of the restraining portion when the substrate heating means thermally expands. A heater device for a plasma processing apparatus according to claim 5.