JP2001060430A - Fuse with resistor - Google Patents
Fuse with resistorInfo
- Publication number
- JP2001060430A JP2001060430A JP11234829A JP23482999A JP2001060430A JP 2001060430 A JP2001060430 A JP 2001060430A JP 11234829 A JP11234829 A JP 11234829A JP 23482999 A JP23482999 A JP 23482999A JP 2001060430 A JP2001060430 A JP 2001060430A
- Authority
- JP
- Japan
- Prior art keywords
- fuse
- resistor
- electrode
- conductive material
- fuse element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 41
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 38
- 239000000956 alloy Substances 0.000 claims abstract description 38
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 17
- 229910052737 gold Inorganic materials 0.000 claims abstract description 16
- 229910052709 silver Inorganic materials 0.000 claims abstract description 14
- 229910002710 Au-Pd Inorganic materials 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000004020 conductor Substances 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 abstract description 22
- 239000002923 metal particle Substances 0.000 abstract description 17
- 230000007257 malfunction Effects 0.000 abstract description 4
- 239000007772 electrode material Substances 0.000 abstract description 2
- 230000005856 abnormality Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 230000001012 protector Effects 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 2
- 239000000020 Nitrocellulose Substances 0.000 description 2
- 229910001252 Pd alloy Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- -1 for example Substances 0.000 description 2
- 229910001416 lithium ion Inorganic materials 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 229920001220 nitrocellulos Polymers 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Landscapes
- Fuses (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は電子・電気機器のプ
ロテクタ−として使用される抵抗体付きヒュ−ズに関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a fuse with a resistor used as a protector for electronic and electric equipment.
【0002】[0002]
【従来の技術】電子・電気機器用プロテクタ−として、
絶縁基板上にヒュ−ズエレメントと膜抵抗とを設けた抵
抗体付きヒュ−ズと異常センサ−とを組合せ、機器の異
常を異常センサで検出して膜抵抗を通電発熱させ、この
発生熱でヒュ−ズエレメントを溶断させて機器を電源か
ら遮断させるものが公知である。図8は前記抵抗体付き
ヒュ−ズの一例を示し、絶縁基板1’上にヒュ−ズ電極
2’,2’とヒ−タ電極5’,5’とを形成し、ヒュ−
ズ電極2’,2’間にヒュ−ズエレメント3’を接続
し、ヒュ−ズエレメント3’上にフラックス4’を塗布
し、ヒ−タ電極5’,5’間に膜抵抗6’を形成し、各
電極にリ−ド線10’を接続し、全体を樹脂モ−ルド
(図示されていない)で封止してある。従来の抵抗体付
きヒュ−ズでは、ヒュ−ズ電極とヒ−タ電極とを同一の
導電性ペ−ストによる印刷・焼成等で形成している。2. Description of the Related Art As a protector for electronic and electric equipment,
A fuse with a resistor provided with a fuse element and a film resistor on an insulating substrate is combined with an abnormality sensor. An abnormality in the device is detected by the abnormality sensor, and the film resistance is energized to generate heat. It is known to fuse a fuse element to cut off a device from a power supply. FIG. 8 shows an example of a fuse with a resistor, in which fuse electrodes 2 ', 2' and heater electrodes 5 ', 5' are formed on an insulating substrate 1 '.
A fuse element 3 'is connected between the fuse electrodes 2' and 2 ', a flux 4' is applied on the fuse element 3 ', and a film resistor 6' is provided between the heater electrodes 5 'and 5'. A lead wire 10 'is connected to each electrode, and the whole is sealed with a resin mold (not shown). In a conventional fuse with a resistor, a fuse electrode and a heater electrode are formed by printing and firing using the same conductive paste.
【0003】[0003]
【発明が解決しようとする課題】上記電極に使用される
導電性ペ−ストは、導電性金属粒子にガラスフリットや
有機溶剤を混合した組成であり、導電性金属粒子にはA
g、Au等の単体金属やAg−Pd、Ag−Pt、Au
−Pd、Au−Pt等の合金が用いられている。The conductive paste used for the electrode has a composition in which glass frit or an organic solvent is mixed with conductive metal particles.
g, Au or other simple metals, Ag-Pd, Ag-Pt, Au
Alloys such as -Pd and Au-Pt are used.
【0004】而るに、上記抵抗体付きヒュ−ズのヒュ−
ズ電極及びヒ−タ電極をAg、Au等の単体金属粒子の
導電性ペ−ストで形成すると、それらの単体金属が移行
性であり膜抵抗への単体金属の移行のために膜抵抗の抵
抗値が変動し易い。これに対し、Ag、Au等の単体金
属を合金化すると、その単体金属の移行性を著しく低く
でき(例えば、Pd35%重量%のAg−Pd合金の移
行速度はPd10重量%のAg−Pd合金の移行速度の
1/100)、上記ヒュ−ズ電極及びヒ−タ電極をAg
−Pd、Ag−Pt、Au−Pd、Au−Pt等の合金
粒子の導電性ペ−ストで形成すれば、膜抵抗の前記抵抗
値変動を防止できるが、合金粒子の導電性ペ−ストで形
成したで形成した電極は単体金属粒子の導電性ペ−スト
で形成した電極に較べ抵抗値が相当に高く(例えば、A
gの場合の2〜4mΩ/□に対し、Ag−Pdの場合2
0〜100mΩ/□)、ヒュ−ズエレメントに低融点の
はんだ線を使用すると、ヒュ−ズ電極の発熱でヒュ−ズ
エレメントが溶断され易く、定格電流を高く設定するこ
とが困難であり、例えば、高出力のリチウムイオン二次
電池用プロテクタ−として満足に使用し難い。[0004] The fuse of the fuse with a resistor is described above.
When the closed electrode and the heater electrode are formed of conductive paste of single metal particles such as Ag and Au, the single metal is migrating and the resistance of the film resistance is increased due to the transfer of the single metal to the film resistance. Values fluctuate easily. On the other hand, when a single metal such as Ag or Au is alloyed, the transferability of the single metal can be remarkably lowered (for example, the transfer rate of an Ag-Pd alloy of 35% by weight of Pd is 10% by weight of a Pd-Ag-Pd alloy). 1/100 of the transfer speed), and the fuse electrode and the heater electrode are Ag.
If the conductive paste of alloy particles such as -Pd, Ag-Pt, Au-Pd, Au-Pt, etc. is used, the fluctuation of the film resistance can be prevented. The formed electrode has a considerably higher resistance value (for example, A) than an electrode formed of a conductive paste of single metal particles.
g to 2-4 mΩ / □, whereas Ag-Pd 2
When a low melting point solder wire is used for the fuse element, the fuse element is easily blown by the heat of the fuse electrode, and it is difficult to set a high rated current. , It is difficult to use it satisfactorily as a high-output lithium-ion secondary battery protector.
【0005】本発明の目的は、抵抗体付きヒュ−ズにお
ける膜抵抗及びヒュ−ズエレメントの前記電極材に起因
する特性変動や誤動作を排除して高定格の作動性に優れ
た抵抗体付きヒュ−ズを提供することにある。SUMMARY OF THE INVENTION It is an object of the present invention to provide a fuse with a resistor which is excellent in operability at a high rating by eliminating a film resistance in the fuse with a resistor and a characteristic variation and a malfunction caused by the electrode material of the fuse element. -To provide
【0006】[0006]
【課題を解決するための手段】本発明に係る抵抗体付き
ヒュ−ズは、絶縁基板上にヒュ−ズエレメントと膜抵抗
を有し、ヒュ−ズエレメントに対する電極がAg、Au
等の単体金属の導電性材料により形成され、膜抵抗に対
する電極がAg−Pd、Ag−Pt、Au−Pd、Au
−Pt、Ag−Pd−Pt、Au−Pd−Pt等の合金
の導電性材料により形成されていることを特徴とする構
成であり、膜抵抗からヒュ−ズエレメントにわたる共通
電極を有する場合、該共通電極の全体を単体金属の導電
性材料で形成するか、または、該共通電極の全体を合金
の導電性材料で形成するか、或いは該共通電極のヒュ−
ズエレメント側部分を単体金属の導電性材料で形成し残
部を合金の導電性材料で形成することができる。A fuse with a resistor according to the present invention has a fuse element and a film resistor on an insulating substrate, and the electrodes for the fuse element are made of Ag or Au.
And an electrode for film resistance is made of Ag-Pd, Ag-Pt, Au-Pd, or Au.
-Pt, Ag-Pd-Pt, Au-Pd-Pt, and the like, characterized by being formed of a conductive material such as an alloy. Either the entire common electrode is formed of a single metal conductive material, or the entire common electrode is formed of an alloy conductive material, or the common electrode
The element side portion can be formed of a single metal conductive material and the remainder can be formed of an alloy conductive material.
【0007】[0007]
【発明の実施の形態】以下、図面を参照しつつ本発明の
実施の形態について説明する。図1は本発明に係る抵抗
体付きヒュ−ズの一例を示す図面である。図1におい
て、1は耐熱性の絶縁基板であり、例えばセラミックス
板、ガラスエポキシ板を使用できる。2,2はヒュ−ズ
電極であり、単体金属粒子の導電性材料、例えばAg、
Auの何れかの単体金属粒子の導電性ペ−ストを印刷
し、焼成することにより形成してある。3はヒュ−ズ電
極2,2間に接続したヒュ−ズエレメント(通常、Φ1
000μm以下の金属線、例えば、はんだ線が使用され
る)、4はヒュ−ズエレメント3上に塗布したフラック
スである。5,5はヒ−タ電極であり、合金粒子の導電
性材料、例えばAg−Pd、Ag−Pt、Au−Pd、
Au−Pt、Ag−Pd−Pt、Au−Pd−Ptの何
れかの合金粒体の導電性ペ−ストを印刷し、焼成するこ
とにより形成してある。6はヒ−タ電極5,5間に跨っ
て形成した膜抵抗である。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a drawing showing an example of a fuse with a resistor according to the present invention. In FIG. 1, reference numeral 1 denotes a heat-resistant insulating substrate, for example, a ceramic plate or a glass epoxy plate can be used. Reference numerals 2 and 2 denote a fuse electrode, which is a conductive material of a single metal particle, for example, Ag,
It is formed by printing and baking a conductive paste of any single metal particle of Au. Reference numeral 3 denotes a fuse element connected between the fuse electrodes 2 and 2 (usually Φ1).
4 is a flux applied on the fuse element 3. Reference numerals 5 and 5 denote heater electrodes, which are conductive materials of alloy particles, for example, Ag-Pd, Ag-Pt, Au-Pd,
It is formed by printing and firing a conductive paste of any of the alloy particles of Au-Pt, Ag-Pd-Pt, and Au-Pd-Pt. Reference numeral 6 denotes a film resistor formed between the heater electrodes 5 and 5.
【0008】本発明に係る抵抗体付きヒュ−ズにおいて
は、図2に示すように一のヒュ−ズ電極2と一のヒ−タ
電極5とを結線し(2,5)三端子構造として回路異常
センサSとFETとの組合せで電子・電気機器Aの保護
に使用される。図2において、Bは電源を示し、ヒュ−
ズエレメントhが常時通電状態に置かれているが、ヒュ
−ズ電極をAg、Au等の単体金属の導電性材料により
形成してあるから、ヒュ−ズ電極の抵抗値を低く抑え
得、ヒュ−ズエレメントhに低融点のはんだ線を使用
し、または定格電流を高く設定しても、平常時でのヒュ
−ズエレメントの溶断を防止できる。図2において、回
路Aに異常が発生すると、例えば過電圧状態になると異
常センサ−Sの作動によりFETが導通状態にされて膜
抵抗hが通電発熱される。而るに、ヒ−タ電極をAg−
Pd、Ag−Pt、Au−Pd、Au−Pt等の合金の
導電性材料で形成してあるから、移行性の単体金属A
g、Au等の合金化による難移行性化のために膜抵抗値
の低下を防止でき、更にAg−Pd、Ag−Pt、Au
−Pd、Au−Pt、Ag−Pd−Pt、Au−Pd−
Pt等の合金の導電性材料による電極がAg、Au等の
単体金属の導電性材料による電極よりも低熱伝導性であ
るために、膜抵抗発生熱の漏洩もよく防止できる。而し
て、これらのこととヒュ−ズエレメントに充分に低融点
の金属線を使用できることとが相俟って、ヒュ−ズエレ
メントの迅速な溶断を保証できる。In the fuse with resistor according to the present invention, as shown in FIG. 2, one fuse electrode 2 and one heater electrode 5 are connected to form a (2,5) three-terminal structure. The combination of the circuit abnormality sensor S and the FET is used for protecting the electronic / electric equipment A. In FIG. 2, B indicates a power supply,
The fuse element h is always in an energized state. However, since the fuse electrode is formed of a single metal conductive material such as Ag or Au, the resistance value of the fuse electrode can be suppressed to a low value. Even if a low melting point solder wire is used for the fuse element h or the rated current is set high, it is possible to prevent the fuse element from being blown in a normal state. In FIG. 2, when an abnormality occurs in the circuit A, for example, when an overvoltage state occurs, the operation of the abnormality sensor S causes the FET to be in a conductive state, and the film resistor h is energized and generates heat. The heater electrode is made of Ag-
Since it is formed of a conductive material such as an alloy such as Pd, Ag-Pt, Au-Pd, or Au-Pt, the transitional single metal A
It is possible to prevent a decrease in film resistance value due to difficult migration due to alloying of g, Au, etc., and further, Ag-Pd, Ag-Pt, Au
-Pd, Au-Pt, Ag-Pd-Pt, Au-Pd-
Since the electrode made of a conductive material of an alloy such as Pt has a lower thermal conductivity than the electrode made of a conductive material of a single metal such as Ag or Au, leakage of heat generated by the film resistance can be prevented well. Thus, in combination with these facts and the fact that a metal wire having a sufficiently low melting point can be used for the fuse element, rapid melting of the fuse element can be guaranteed.
【0009】図3は本発明に係る抵抗体付きヒュ−ズの
別実施例を示し、ヒ−タ電極5のうち膜抵抗側部分5a
を合金の導電性材料、例えばAg−Pd、Ag−Pt、
Au−Pd、Au−Pt、Ag−Pd−Pt、Au−P
d−Ptの何れかの合金粒子の導電性ペ−ストにより形
成し、同膜抵抗5の残部5bを単体金属の導電性材料、
例えばAg、Auの何れかの単体金属粒子の導電性ペ−
ストにより形成してあり、他の構成は図1に示した実施
例と実質的に同じである。FIG. 3 shows another embodiment of a fuse with a resistor according to the present invention.
Is a conductive material of an alloy, for example, Ag-Pd, Ag-Pt,
Au-Pd, Au-Pt, Ag-Pd-Pt, Au-P
d-Pt is formed by conductive paste of any alloy particles, and the remaining 5b of the film resistor 5 is made of a single metal conductive material;
For example, the conductive paper of a single metal particle of Ag or Au
The other structure is substantially the same as the embodiment shown in FIG.
【0010】上記図1及び図3に示す実施例では、一の
ヒュ−ズ電極と一のヒ−タ電極とを結線し三端子構造と
して使用されるが、図4に示すように、一のヒュ−ズ電
極と一のヒ−タ電極とを結合した共通電極52を設けた
構成とすることもできる。この場合、共通電極52のヒ
−タ側部分50をAg−Pd、Ag−Pt、Au−P
d、Au−Pt、Ag−Pd−Pt、Au−Pd−Pt
の何れかの合金粒子の導電性ペ−ストで形成し、同共通
電極52の残部(ヒュ−ズ側部分)20をAg、Auの
何れかの単体金属粒子の導電性ペ−ストで形成すること
が望ましいが、共通電極全体52を単体金属粒子の導電
性ペ−ストまたは合金粒子の導電性ペ−ストで形成して
も(何れの場合も、ヒュ−ズ電極2は単体金属粒子の導
電性ペ−ストで形成し、ヒ−タ電極5は合金粒子の導電
性ペ−ストで形成するか、ヒ−タ電極5のうち膜抵抗側
部分を合金粒子の導電性ペ−ストにより形成し、同膜抵
抗5の残部を単体金属粒子の導電性ペ−ストにより形成
する)、全ての電極2、5、52を合金粒子の導電性ペ
−ストで形成した場合よりも高い定格電流下での平常時
のヒュ−ズエレメントの溶断防止、或いは全ての電極
2、5、52を単体金属粒子の導電性ペ−ストで形成し
た場合よりもAg、Au等の単体金属の移行性軽減にに
よる膜抵抗値変動の緩和を充分に達成できる。In the embodiment shown in FIGS. 1 and 3, one fuse electrode and one heater electrode are connected and used as a three-terminal structure. As shown in FIG. A configuration in which a common electrode 52 in which a fuse electrode and one heater electrode are combined may be provided. In this case, the heater-side portion 50 of the common electrode 52 is made of Ag-Pd, Ag-Pt, Au-P
d, Au-Pt, Ag-Pd-Pt, Au-Pd-Pt
The common electrode 52 is formed of a conductive paste, and the rest (fuse side portion) 20 of the common electrode 52 is formed of a conductive paste of a single metal particle of Ag or Au. It is desirable that the entire common electrode 52 be formed of a conductive paste of a single metal particle or a conductive paste of an alloy particle (in any case, the fuse electrode 2 is formed of a conductive paste of a single metal particle. Heater electrode 5 is formed of conductive paste of alloy particles, or a portion of heater electrode 5 on the film resistance side is formed of conductive paste of alloy particles. The remaining part of the film resistor 5 is formed by a conductive paste of a single metal particle), and at a higher rated current than when all the electrodes 2, 5, and 52 are formed by a conductive paste of an alloy particle. Prevent the fuse element from fusing in normal times, or use all electrodes 2, 5, 52 as a single unit Conductive Paix genus particles - sufficiently achieve relaxation of the membrane resistance variation due to the migration reduce a single metal of Ag, Au, etc. than when formed by strike.
【0011】本発明に係る抵抗体付きヒュ−ズは、図5
に示すように、ヒュ−ズ電極2,2間に共通電極52を
設けてヒュ−ズ部を2ヵ所3a,3bにし、この共通電
極52とヒ−タ電極5との間に跨り膜抵抗6を形成した
構成とし、図6に示すように過電圧センサ−SとFET
との組合せでリチウムイオン二次電池Aの過充電保護に
使用できる。この実施例においても、共通電極52のヒ
−タ側部分50をAg−Pd、Ag−Pt、Au−P
d、Au−Pt、Ag−Pd−Pt、Au−Pd−Pt
の何れかの合金粒子の導電性ペ−ストで形成し、同共通
電極52の残部(ヒュ−ズ側部分)20をAg、Auの
何れかの単体金属粒子の導電性ペ−ストで形成すること
が望ましいが、共通電極全体52を単体金属粒子の導電
性ペ−ストまたは合金粒子の導電性ペ−ストで形成する
(何れの場合も、ヒュ−ズ電極2,2は単体金属粒子の
導電性ペ−ストで形成し、ヒ−タ電極5は合金粒子の導
電性ペ−ストで形成するか、またはヒ−タ電極5のうち
膜抵抗側部分を合金粒子の導電性ペ−ストにより形成
し、同膜抵抗5の残部を単体金属粒子の導電性ペ−スト
により形成する)こともできる。FIG. 5 shows a fuse with a resistor according to the present invention.
As shown in FIG. 3, a common electrode 52 is provided between the fuse electrodes 2 and 2 so that a fuse portion is formed in two places 3a and 3b, and a straddling film resistor 6 is provided between the common electrode 52 and the heater electrode 5. Are formed, and as shown in FIG.
Can be used for overcharge protection of the lithium ion secondary battery A. Also in this embodiment, the heater-side portion 50 of the common electrode 52 is made of Ag-Pd, Ag-Pt, Au-P.
d, Au-Pt, Ag-Pd-Pt, Au-Pd-Pt
The common electrode 52 is formed of a conductive paste, and the rest (fuse side portion) 20 of the common electrode 52 is formed of a conductive paste of a single metal particle of Ag or Au. Preferably, the entire common electrode 52 is formed of a conductive paste of a single metal particle or a conductive paste of an alloy particle (in either case, the fuse electrodes 2 and 2 are formed of a conductive paste of a single metal particle). Heater electrode 5 is formed of conductive paste of alloy particles, or a portion of heater electrode 5 on the film resistance side is formed of conductive paste of alloy particles. Alternatively, the remaining part of the film resistor 5 may be formed by a conductive paste of a single metal particle).
【0012】図6において、Aは二次電池を、Bは充電
器を、Hは本発明に係る抵抗体付きヒュ−ズを、rは膜
抵抗を、ha,hbはヒュ-ズ部を、Sは過電圧センサ
−(IC)を、FETは電界効果型トランジスタ−をそ
れぞれ示し、二次電池Aが過充電状態になってその端子
電圧が急上昇すると、過電圧センサ−Sが作動しその出
力でFETが導通され、膜抵抗rが通電発熱されてヒュ
−ズha,hbが溶断され、二次電池Aの端子間が開放
されると共に膜抵抗rが二次電池A及び充電器Bから遮
断されて膜抵抗rの通電発熱が停止される。In FIG. 6, A is a secondary battery, B is a charger, H is a fuse with a resistor according to the present invention, r is a membrane resistance, ha and hb are fuse portions, S indicates an overvoltage sensor (IC), and FET indicates a field-effect transistor. When the secondary battery A is overcharged and its terminal voltage rises sharply, the overvoltage sensor S is activated and its output is used as an FET. Is conducted, the membrane resistor r is energized and heated, the fuses ha and hb are blown, the terminals of the secondary battery A are opened, and the membrane resistor r is cut off from the secondary battery A and the charger B. Heating of the energization of the film resistor r is stopped.
【0013】上記図1、図3、図4及び図6に示す実施
例では、ヒューズ電極2を単体金属の導電性材料で形成
しているが、例えば図7に示すように、ヒューズ電極2
のうちヒューズエレメント側部分23を単体金属の導電
性材料、例えばAg、Auの何れかの単体金属粒子の導
電性ペ−ストで形成し、ヒューズエレメント3から離れ
た遠方部分210を合金の導電性材料、例えばAg−P
d、Ag−Pt、Au−Pd、Au−Pt、Ag−Pd
−Pt、Au−Pd−Ptの何れかの合金粒子の導電性
ペ−ストで形成することも可能である。In the embodiment shown in FIGS. 1, 3, 4 and 6, the fuse electrode 2 is formed of a single metal conductive material. For example, as shown in FIG.
The fuse element side portion 23 is formed of a conductive paste of a single metal, for example, a conductive paste of a single metal particle of Ag or Au, and the remote portion 210 remote from the fuse element 3 is formed of an alloy conductive material. Material, for example Ag-P
d, Ag-Pt, Au-Pd, Au-Pt, Ag-Pd
It is also possible to form the conductive paste of any alloy particles of -Pt and Au-Pd-Pt.
【0014】本発明において、単体金属の導電性材料と
しては、Ag、Au等の単体金属粒子にガラスフリット
及び有機溶剤(エチルセルロ−ス、ニトロセルロ−ス、
ポリビニルブチラ−ル)を混合した組成の焼成型導電性
ペ−ストを印刷し、焼成したもの、Ag、Au等の単体
金属粒子に硬化型樹脂(エポキシ樹脂、フェノ−ル樹
脂、アクリル樹脂、ウレタン樹脂等)及び有機溶剤を混
合した組成のポリマ−型導電性ペ−ストを印刷し、硬化
させたものを使用できる。In the present invention, as a conductive material of a single metal, a glass frit and an organic solvent (ethyl cellulose, nitrocellulose,
A baked conductive paste having a composition mixed with polyvinyl butyral) is printed and baked, and a curable resin (epoxy resin, phenol resin, acrylic resin, A polymer-type conductive paste having a composition of a mixture of an urethane resin) and an organic solvent, printed and cured, can be used.
【0015】また、合金の導電性材料としては、Ag−
Pd、Ag−Pt、Au−Pd、Au−Pt、Ag−P
d−Pt、Au−Pd−Pt等の合金粒子にガラスフリ
ット及び有機溶剤(エチルセルロ−ス、ニトロセルロ−
ス、ポリビニルブチラ−ル)を混合した組成の焼成型導
電性ペ−ストをを印刷し、焼成したもの、Ag−Pd、
Ag−Pt、Au−Pd、Au−Pt、Ag−Pd−P
t、Au−Pd−Pt等の合金粒子に硬化型樹脂(エポ
キシ樹脂、フェノ−ル樹脂、アクリル樹脂、ウレタン樹
脂等)及び有機溶剤を混合した組成のポリマ−型導電性
ペ−ストを印刷し、硬化させたものを使用できる。As a conductive material of the alloy, Ag-
Pd, Ag-Pt, Au-Pd, Au-Pt, Ag-P
A glass frit and an organic solvent (ethyl cellulose, nitrocellulose) are added to alloy particles such as d-Pt and Au-Pd-Pt.
, Polyvinyl butyral), and baked conductive paste of a composition obtained by mixing and printing the baked conductive paste, Ag-Pd,
Ag-Pt, Au-Pd, Au-Pt, Ag-Pd-P
t, Au-Pd-Pt and other alloy particles are mixed with a curable resin (epoxy resin, phenol resin, acrylic resin, urethane resin, etc.) and an organic solvent to form a polymer-type conductive paste. And cured ones can be used.
【0016】上記において、合金には使用する単体金属
の合金を使用することが好ましいが、例えば、Agに対
してAu−Pd,Au−Pt、Au−Pd−Pt、Au
に対してAg−Pd,Ag−Pt、Ag−Pd−Pt等
の異種系で使用することも可能である。In the above, it is preferable to use an alloy of a single metal used as the alloy. For example, Au—Pd, Au—Pt, Au—Pd—Pt, Au
On the other hand, it is also possible to use a heterogeneous system such as Ag-Pd, Ag-Pt and Ag-Pd-Pt.
【0017】また、Cu粒子の導電性ペ−ストで形成し
た電極はAg、Au粒子で形成した電極と同程度の低い
抵抗値を呈するが(3〜5mΩ/□)、移行速度がかな
り高いので、単体金属粒子の導電性ペ−ストとしてCu
単体粒子の導電性ペ−ストを、合金粒子の導電性ペ−ス
トとしてAg−Pd、Ag−Pt、Au−Pd、Au−
Pt、Ag−Pd−Pt、Au−Pd−Pt等の合金粒
子の導電性ペ−ストを使用することも可能である。The electrode formed of a conductive paste of Cu particles has a low resistance value (3 to 5 mΩ / □) similar to that of an electrode formed of Ag or Au particles. , Cu is used as the conductive paste of the single metal particles.
Ag-Pd, Ag-Pt, Au-Pd, and Au- are used as the conductive paste of the single particles as the conductive paste of the alloy particles.
It is also possible to use a conductive paste of alloy particles such as Pt, Ag-Pd-Pt and Au-Pd-Pt.
【0018】上記実施例では、電極を導電性ペ−ストの
印刷・焼き付け等により形成しているが、スパッタリン
グ、溶射、PVD、CVD、電気めっき、無電解めっ
き、あるいは箔状導電材料の張付け等で形成することも
可能である。また、絶縁基板としては、上記セラミック
ス板、ガラスエポキシ板以外に、ガラス板、ステンレス
等の絶縁処理金属板、ほうろう板、ポリエチレンテレフ
タレート等のプラスチックフィルム等を使用することも
可能である。In the above embodiment, the electrodes are formed by printing and baking of a conductive paste. However, the electrodes are formed by sputtering, thermal spraying, PVD, CVD, electroplating, electroless plating, or sticking of a foil-like conductive material. It is also possible to form with. As the insulating substrate, a glass plate, an insulated metal plate such as stainless steel, an enamel plate, a plastic film such as polyethylene terephthalate, or the like can be used in addition to the above ceramic plate and glass epoxy plate.
【0019】なお、上記何れの実施例もリ−ド線方式と
しているが(図1、図3、図4、図5及び図7におい
て、10はリ−ド線を示す)、電極のリ−ド線を省略し
てその電極を絶縁基板の側面または裏面にまで廻し、チ
ップタイプとすることも可能である。この場合、はんだ
付け性の向上のために電極表面に易はんだ付け性金属を
めっきすることも可能である。In each of the above embodiments, the lead wire system is used (in FIGS. 1, 3, 4, 5, and 7, reference numeral 10 denotes a lead wire). It is also possible to form a chip type by omitting the lead wire and turning the electrode to the side surface or the back surface of the insulating substrate. In this case, it is also possible to plate the surface of the electrode with a solderable metal to improve the solderability.
【0020】また、上記何れの実施例も絶縁基板上の二
次元スペ−スのみを使用しているか、絶縁層を介し多層
化して三次元構成とすることも可能である。また、絶縁
板の表裏を使用することも可能である。更に、上記何れ
の実施例も、封止部材の図示が省略されているが、ケ−
スや樹脂モ−ルドやプラスチックフィルムのヒ−トシ−
ル若しくは接着剤シ−ル等により封止して使用される。In each of the above embodiments, only a two-dimensional space on an insulating substrate is used, or a three-dimensional structure can be obtained by forming a multilayer through an insulating layer. It is also possible to use the front and back of the insulating plate. Further, in all of the above embodiments, the illustration of the sealing member is omitted,
Heat of resin, mold and plastic film
It is used by sealing with a seal or an adhesive seal.
【0021】[0021]
【発明の効果】本発明に係る抵抗体付きヒュ−ズにおい
ては、ヒュ−ズ電極の抵抗値をヒ−タ電極の抵抗値より
も相当に低くしているから、ヒュ−ズエレメントに低融
点のはんだ線を用いたり、定格電流値を高く設定して
も、ヒュ−ズ電極の発熱によるヒュ−ズエレメント溶断
の誤動作を防止できる。また、ヒ−タ電極をヒュ−ズ電
極よりも移行速度の低い合金粒子の導電性材料で形成し
ているから、膜抵抗の抵抗値低下を防止できると共にそ
のヒ−タ電極の低熱伝導性のために膜抵抗の発生熱の漏
洩を抑制できる。従って、定格電流を高くしてもヒュ−
ズエレメントの溶断誤動作を防止し、かつヒュ−ズエレ
メントの迅速な溶断を保証できる。In the fuse with a resistor according to the present invention, the fuse element has a low melting point because the resistance of the fuse electrode is considerably lower than the resistance of the heater electrode. Even if the solder wire is used or the rated current value is set high, it is possible to prevent the malfunction of the fuse element fusing due to the heat generation of the fuse electrode. Further, since the heater electrode is formed of a conductive material of alloy particles having a lower transition speed than the fuse electrode, it is possible to prevent a reduction in the resistance value of the film resistance and to reduce the heat conductivity of the heater electrode. Therefore, leakage of heat generated by the film resistance can be suppressed. Therefore, even if the rated current is increased,
Malfunction of the fuse element can be prevented, and quick fusion of the fuse element can be guaranteed.
【図1】本発明に係る抵抗体付きヒュ−ズの一例を示す
図面である。FIG. 1 is a drawing showing an example of a fuse with a resistor according to the present invention.
【図2】図1の抵抗体付きヒュ−ズの使用状態を示す等
価回路である。FIG. 2 is an equivalent circuit showing a use state of the fuse with a resistor of FIG. 1;
【図3】本発明に係る抵抗体付きヒュ−ズの上記とは別
の例を示す図面である。FIG. 3 is a drawing showing another example of the fuse with resistor according to the present invention.
【図4】本発明に係る抵抗体付きヒュ−ズの上記とは別
の例を示す図面である。FIG. 4 is a drawing showing another example of the fuse with resistor according to the present invention.
【図5】本発明に係る抵抗体付きヒュ−ズの上記とは別
の例を示す図面である。FIG. 5 is a drawing showing another example of the fuse with resistor according to the present invention.
【図6】図6の抵抗体付きヒュ−ズの使用状態を示す等
価回路である。FIG. 6 is an equivalent circuit showing a use state of the fuse with a resistor of FIG. 6;
【図7】本発明に係る抵抗体付きヒュ−ズの上記とは別
の例を示す図面である。FIG. 7 is a drawing showing another example of the fuse with resistor according to the present invention.
【図8】従来の抵抗体付きヒュ−ズを示す図面である。FIG. 8 is a drawing showing a conventional fuse with a resistor.
1 絶縁基板 2 ヒュ−ズ電極 3 ヒュ−ズエレメント 5 ヒ−タ電極 52 共通電極 20 共通電極のヒュ−ズ側部分 50 共通電極のヒ−タ側部分 REFERENCE SIGNS LIST 1 insulating substrate 2 fuse electrode 3 fuse element 5 heater electrode 52 common electrode 20 fuse-side portion of common electrode 50 heater-side portion of common electrode
Claims (12)
を有し、ヒュ−ズエレメントに対する電極が単体金属の
導電性材料により形成され、膜抵抗に対する電極が合金
の導電性材料により形成されていることを特徴とする抵
抗体付きヒュ−ズ。A fuse element and a film resistor are provided on an insulating substrate, an electrode for the fuse element is formed of a single metal conductive material, and an electrode for the film resistor is formed of an alloy conductive material. A fuse with a resistor, characterized in that:
通電極を有し、該共通電極のヒュ−ズエレメント側部分
が単体金属の導電性材料で形成され、同共通電極の残部
が合金の導電性材料で形成されている請求項1記載の抵
抗体付きヒュ−ズ。2. A fuse having a common electrode extending from a film resistor to a fuse element, wherein the fuse element side portion of the common electrode is formed of a single metal conductive material, and the remainder of the common electrode is formed of an alloy conductive material. 2. The fuse with a resistor according to claim 1, wherein the fuse is formed of a material.
通電極を有し、該共通電極の全体が単体金属の導電性材
料で形成されている請求項1記載の抵抗体付きヒュ−
ズ。3. The fuse with a resistor according to claim 1, further comprising a common electrode extending from the film resistor to the fuse element, wherein the entire common electrode is formed of a single metal conductive material.
Z.
通電極を有し、該共通電極の全体が合金の導電性材料で
形成されている請求項1記載の抵抗体付きヒュ−ズ。4. The fuse with a resistor according to claim 1, further comprising a common electrode extending from the film resistor to the fuse element, wherein the entire common electrode is formed of an alloy conductive material.
ュ−ズエレメントから離れた遠方部分が合金の導電性材
料で形成されている請求項1〜4何れか記載の抵抗体付
きヒュ−ズ。5. The fuse with a resistor according to claim 1, wherein a portion of the electrode for the fuse element remote from the fuse element is formed of a conductive material of an alloy.
金がAg−Pd、Ag−Pt、Au−Pd、Au−P
t、Ag−Pd−Pt、Au−Pd−Ptの何れかであ
る請求項1〜5何れか記載の抵抗体付きヒュ−ズ。6. The elemental metal is one of Ag and Au, and the alloy is Ag-Pd, Ag-Pt, Au-Pd, Au-P
The fuse with a resistor according to any one of claims 1 to 5, wherein the fuse is any one of t, Ag-Pd-Pt, and Au-Pd-Pt.
を有し、ヒュ−ズエレメントに対する電極が単体金属の
導電性材料により形成され、膜抵抗に対する電極のうち
膜抵抗側部分が合金の導電性材料により形成され、同電
極の残部が単体金属の導電性材料により形成されている
ことを特徴とする抵抗体付きヒュ−ズ。7. A fuse element and a film resistor are provided on an insulating substrate, an electrode for the fuse element is formed of a single metal conductive material, and a portion of the electrode for the film resistor on the film resistor side is formed of an alloy. A fuse with a resistor, wherein the fuse is made of a conductive material, and the remainder of the electrode is made of a single metal conductive material.
通電極を有し、該共通電極のヒュ−ズエレメント側部分
が単体金属の導電性材料で形成され、同共通電極の残部
が合金の導電性材料で形成されている請求項7記載の抵
抗体付きヒュ−ズ。8. A fuse having a common electrode extending from a resistor to a fuse element, a portion of the common electrode facing the fuse element is formed of a single metal conductive material, and the remainder of the common electrode is formed of an alloy conductive material. The fuse with a resistor according to claim 7, which is formed of a material.
通電極を有し、該共通電極の全体が単体金属の導電性材
料で形成されている請求項7記載の抵抗体付きヒュ−
ズ。9. The fuse with a resistor according to claim 7, further comprising a common electrode extending from the film resistor to the fuse element, wherein the entire common electrode is formed of a single metal conductive material.
Z.
共通電極を有し、該共通電極の全体が合金の導電性材料
で形成されている請求項7記載の抵抗体付きヒュ−ズ。10. The fuse with a resistor according to claim 7, further comprising a common electrode extending from the film resistor to the fuse element, wherein the entire common electrode is formed of an alloy conductive material.
ヒュ−ズエレメントから離れた遠方部分が合金の導電性
材料で形成されている請求項7〜10何れか記載の抵抗
体付きヒュ−ズ。11. The fuse with a resistor according to claim 7, wherein a portion of the electrode for the fuse element that is remote from the fuse element is formed of an alloy conductive material.
合金がAg−Pd、Ag−Pt、Au−Pd、Au−P
t、Ag−Pd−Pt、Au−Pd−Ptの何れかであ
る請求項7〜11何れか記載の抵抗体付きヒュ−ズ。12. The single metal is one of Ag and Au,
Alloy is Ag-Pd, Ag-Pt, Au-Pd, Au-P
The fuse with a resistor according to any one of claims 7 to 11, wherein the fuse is any one of t, Ag-Pd-Pt, and Au-Pd-Pt.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23482999A JP4219502B2 (en) | 1999-08-23 | 1999-08-23 | Resistive fuse |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23482999A JP4219502B2 (en) | 1999-08-23 | 1999-08-23 | Resistive fuse |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001060430A true JP2001060430A (en) | 2001-03-06 |
| JP4219502B2 JP4219502B2 (en) | 2009-02-04 |
Family
ID=16977041
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23482999A Expired - Fee Related JP4219502B2 (en) | 1999-08-23 | 1999-08-23 | Resistive fuse |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4219502B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009070805A (en) * | 2007-08-20 | 2009-04-02 | Uchihashi Estec Co Ltd | Substrate type temperature fuse with resistor and secondary battery protection circuit |
| JP2009212007A (en) * | 2008-03-05 | 2009-09-17 | Uchihashi Estec Co Ltd | Protection element |
-
1999
- 1999-08-23 JP JP23482999A patent/JP4219502B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009070805A (en) * | 2007-08-20 | 2009-04-02 | Uchihashi Estec Co Ltd | Substrate type temperature fuse with resistor and secondary battery protection circuit |
| JP2009212007A (en) * | 2008-03-05 | 2009-09-17 | Uchihashi Estec Co Ltd | Protection element |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4219502B2 (en) | 2009-02-04 |
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