JP2000331977A5 - - Google Patents
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- JP2000331977A5 JP2000331977A5 JP1999139536A JP13953699A JP2000331977A5 JP 2000331977 A5 JP2000331977 A5 JP 2000331977A5 JP 1999139536 A JP1999139536 A JP 1999139536A JP 13953699 A JP13953699 A JP 13953699A JP 2000331977 A5 JP2000331977 A5 JP 2000331977A5
- Authority
- JP
- Japan
- Prior art keywords
- hydrogen gas
- dissolved
- water
- ozone
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- 238000004140 cleaning Methods 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000003638 chemical reducing agent Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- LPXPTNMVRIOKMN-UHFFFAOYSA-M sodium nitrite Chemical compound [Na+].[O-]N=O LPXPTNMVRIOKMN-UHFFFAOYSA-M 0.000 description 2
- GEHJYWRUCIMESM-UHFFFAOYSA-L sodium sulfite Chemical compound [Na+].[Na+].[O-]S([O-])=O GEHJYWRUCIMESM-UHFFFAOYSA-L 0.000 description 2
- 235000010265 sodium sulphite Nutrition 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- AOSFMYBATFLTAQ-UHFFFAOYSA-N 1-amino-3-(benzimidazol-1-yl)propan-2-ol Chemical compound C1=CC=C2N(CC(O)CN)C=NC2=C1 AOSFMYBATFLTAQ-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- PQUCIEFHOVEZAU-UHFFFAOYSA-N Diammonium sulfite Chemical compound [NH4+].[NH4+].[O-]S([O-])=O PQUCIEFHOVEZAU-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- DWAQJAXMDSEUJJ-UHFFFAOYSA-M Sodium bisulfite Chemical compound [Na+].OS([O-])=O DWAQJAXMDSEUJJ-UHFFFAOYSA-M 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical class OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 1
- CAMXVZOXBADHNJ-UHFFFAOYSA-N ammonium nitrite Chemical compound [NH4+].[O-]N=O CAMXVZOXBADHNJ-UHFFFAOYSA-N 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 125000002485 formyl group Chemical class [H]C(*)=O 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002826 nitrites Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229940079827 sodium hydrogen sulfite Drugs 0.000 description 1
- 235000010267 sodium hydrogen sulphite Nutrition 0.000 description 1
- 235000010288 sodium nitrite Nutrition 0.000 description 1
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 description 1
- 235000019345 sodium thiosulphate Nutrition 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-L sulfite Chemical class [O-]S([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-L 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Description
本発明方法に用いる還元性物質に特に制限はなく、例えば、水素ガスなどの還元性気体、ギ酸、アルデヒド、アルコールなどの有機還元性物質、ヒドラジン、硫化水素などの無機還元性物質、次亜硫酸ナトリウム、次亜硫酸アンモニウムなどの次亜硫酸塩、亜硫酸ナトリウム、亜硫酸アンモニウムなどの亜硫酸塩、亜硫酸水素ナトリウム、亜硫酸水素アンモニウムなどの亜硫酸水素塩、亜硝酸ナトリウム、亜硝酸アンモニウムなどの亜硝酸塩などを挙げることができる。これらの中で、水素ガスは副次的な汚染を生ずるおそれがなく、洗浄後のリンスに対する負荷が小さいので、特に好適に用いることができる。また、還元性物質として、過酸化水素を用いることもできる。過酸化水素は、通常、酸化剤として使われるが、酸化力の強いオゾンのような酸化剤を併用すると還元剤としてふるまう。過酸化水素は、一般的にウェット洗浄工程で使用されており、高純度品が容易に得られる。水素ガスと同様に、電子材料の汚染源となるおそれがなく、実用的である。
本発明方法において、オゾン溶解洗浄水に還元性物質である水素ガスを混合する方法に特に制限はなく、例えば、オゾン溶解洗浄水に気体状の水素ガスを直接吹き込むことができ、あるいは、オゾン溶解洗浄水に水素ガス溶解水を混合することもできる。水素ガス溶解水を用いるとき、溶存水素ガス濃度は０.０１ｍｇ／リットル以上であることが好ましく、０.１ｍｇ／リットル以上であることがより好ましい。溶存水素ガス濃度が０.０１ｍｇ／リットル未満であると、オゾン溶解洗浄水に混合すべき水素ガス溶解水の量が多くなって、電子材料に接触するときの洗浄水の溶存オゾン濃度が低くなりすぎるおそれがある。
本発明方法に用いる水素ガス溶解水の製造方法に特に制限はなく、例えば、超純水への水素ガスのバブリング、気体透過膜を内臓したモジュールの利用などを挙げることができる。これらの中で、気体透過膜を内蔵したモジュールは、高純度かつ高濃度の水素ガス溶解水を容易に得ることができるので好適に用いることができる。特に、前段に膜脱気装置を設けて２段階処理を行うことにより、２０℃、０.１ＭＰａにおける飽和濃度である１.６ｍｇ／リットルの水素ガス溶解水を、余分な水素ガスを無駄に消費することなく製造することができる。また、最近のウェット洗浄工程においては、主として微粒子の除去などを目的として水素ガス溶解水が用いられる場合が多いので、オゾン溶解洗浄水が用いられる洗浄設備又はその付近で水素ガス溶解水が用いられている場合には、その一部を分岐して使用することができる。
There is no particular limitation on the reducing substance used in the method of the present invention. For example, reducing gases such as hydrogen gas, organic reducing substances such as formic acid, aldehyde and alcohol, hydrazine, inorganic reducing substances such as hydrogen sulfide, sodium hyposulfite And sulfites such as sodium sulfite and ammonium sulfite; bisulfites such as sodium hydrogen sulfite and ammonium bisulfite; and nitrites such as sodium nitrite and ammonium nitrite. Among them, hydrogen gas can be used particularly preferably because there is no possibility of causing secondary contamination and the load on the rinse after cleaning is small. In addition, hydrogen peroxide can be used as the reducing substance. Hydrogen peroxide is usually used as an oxidizing agent, but acts as a reducing agent when used in combination with an oxidizing agent such as ozone having a strong oxidizing power. Hydrogen peroxide is generally used in a wet cleaning process, and a high-purity product can be easily obtained. Like hydrogen gas, it is practical because there is no possibility of becoming a contamination source of electronic materials.
In the method of the present invention, there is no particular limitation on the method of mixing hydrogen gas, which is a reducing substance, with the ozone-dissolved cleaning water. For example, gaseous hydrogen gas can be directly blown into the ozone-dissolved cleaning water, Hydrogen gas dissolved water can be mixed with the washing water. When hydrogen gas-dissolved water is used, the dissolved hydrogen gas concentration is preferably 0.01 mg / L or more, and more preferably 0.1 mg / L or more . If the dissolved hydrogen gas concentration is less than 0.01 mg / liter, the amount of hydrogen gas-dissolved water to be mixed with the ozone-dissolved cleaning water increases, and the dissolved ozone concentration of the cleaning water when coming into contact with electronic materials decreases. May be too much.
The method for producing hydrogen gas-dissolved water used in the method of the present invention is not particularly limited, and examples thereof include bubbling of hydrogen gas into ultrapure water, use of a module having a gas permeable membrane, and the like. Among these, a module having a built-in gas permeable membrane can be preferably used because high-purity and high-concentration hydrogen gas-dissolved water can be easily obtained. In particular, by installing a membrane deaerator at the front stage and performing a two-stage treatment, 1.6 mg / liter of hydrogen gas-dissolved water, which is a saturation concentration at 20 ° C. and 0.1 MPa, is wastefully consumed. It can be manufactured without doing. In recent wet cleaning processes, hydrogen gas-dissolved water is often used mainly for the purpose of removing fine particles, etc., so hydrogen gas-dissolved water is used in or near a cleaning facility using ozone-dissolved wash water. If it is, a part of it can be branched and used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11139536A JP2000331977A (en) | 1999-05-20 | 1999-05-20 | How to clean electronic materials |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11139536A JP2000331977A (en) | 1999-05-20 | 1999-05-20 | How to clean electronic materials |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000331977A JP2000331977A (en) | 2000-11-30 |
| JP2000331977A5 true JP2000331977A5 (en) | 2006-05-25 |
Family
ID=15247573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11139536A Pending JP2000331977A (en) | 1999-05-20 | 1999-05-20 | How to clean electronic materials |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000331977A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3535820B2 (en) | 2000-10-06 | 2004-06-07 | エム・エフエスアイ株式会社 | Substrate processing method and substrate processing apparatus |
| JP4039662B2 (en) | 2002-08-13 | 2008-01-30 | 株式会社Ｓｕｍｃｏ | Method for cleaning semiconductor substrate or element |
| JP2011035300A (en) * | 2009-08-05 | 2011-02-17 | Asahi Sunac Corp | Cleaning apparatus and method |
| JP2011039339A (en) * | 2009-08-13 | 2011-02-24 | Canon Inc | Method of regenerating peeling liquid |
| CN101972753B (en) * | 2010-07-21 | 2011-12-21 | 河北工业大学 | Method for cleaning surface of magnesium aluminum alloy subjected to chemically mechanical polishing |
| CN102039283B (en) * | 2010-07-21 | 2012-04-18 | 河北工业大学 | Surface cleaning method after chemical mechanical polishing of Ti barrier material |
-
1999
- 1999-05-20 JP JP11139536A patent/JP2000331977A/en active Pending
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