JP2000319782A - Film forming device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a film-forming device with which a film-forming time is remarkably shortened compared to a conventional method and the dispersion in a characteristic among elements is suppressed by controlling a film thickness for each element. SOLUTION: In a film-forming device for forming a thin film on plural thin- film-forming zones 3a, on which a thin film is to be formed, of a mother substrate 3 placed in a film-forming chamber 1, in order to form a thin film of an optional thickness for each thin-film-forming zone 3a, a shutter mechanism 30 is provided which is independently operated for each thin-film-forming zone 3a and makes every thin-film-forming zone 3a exposed to or shield from the raw material particles of the thin film supplied from a film forming source 2, thus the films are formed simultaneously on the plural thin-film-forming zones 3a, and a film with a predetermined film thickness is independently formed on every thin-film-forming zone 3a.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming apparatus used for forming a thin film on a substrate, and more particularly, to a film forming apparatus for forming a thin film on a substrate by a method such as a sputtering method or a vapor deposition method. It relates to a membrane device.

[0002]

2. Description of the Related Art For example, a thin film electrode (oscillating electrode) is provided on a substrate.
When manufacturing a ceramic electronic component such as a piezoelectric ceramic filter having a structure in which is disposed, in order to manufacture a product having a tolerance within a predetermined range, for example, a sputtering method or a vacuum evaporation method such as a sputtering method or a vacuum evaporation method on a mother substrate surface. A thin film electrode is formed by performing film formation (first film formation) by a method, and after cutting the mother substrate and dividing it into individual elements, the characteristics of the individual elements are measured. In this method, the film thickness (the second film formation) is further formed on the thin film electrode (the first thin film electrode) of the element to control the thickness of the whole thin film electrode, thereby suppressing variation in characteristics. I have.

As another method, individual elements obtained by dividing a mother substrate on which thin-film electrodes are formed are classified into a plurality of ranks according to the result of measurement of characteristics, and a plurality of elements having the same rank are formed. The film was set on a film jig, and under the same film forming conditions, a film was further formed on the previously formed thin film electrode (second film forming) to obtain a product having a predetermined tolerance range. There is a way.

[0004]

However, in the above method, when the second film is formed after the first film is formed, the number of elements divided from the mother substrate is set to n and the second film is formed. Assuming that the average film forming time in the film forming step is t, a film forming time corresponding to n × t is required in the second film forming step, and there is a problem that the production efficiency is greatly reduced.

Further, when the product is a narrow tolerance product, if the thin film electrode formed in the first film forming step exceeds a predetermined film thickness, it cannot be corrected (adjusted) in the second film forming step. In some cases, it is necessary to keep the film thickness of the thin film electrode formed in the first film forming step small, and the film thickness of the thin film electrode to be formed in the second film forming step becomes large. , Second
However, there is a problem that the average film forming time t in the film forming process becomes longer.

In the above-described method, a plurality of elements are classified into a plurality of ranks after the first film formation, and a plurality of devices having the same rank are collectively subjected to the second film formation. The film formation time in the film formation step 2 can be shorter than that in the above-described method. However, in the case of a narrow tolerance product, it is necessary to set a narrower rank width.
Accordingly, there is a problem that the time required for the second film formation becomes longer, and it takes more man-hours to perform an optimal ranking for shortening the processing time. In addition, in the case of the method based on ranking, even if the film can be formed according to the film thickness set value for each rank, the variation width according to the rank width cannot be suppressed, and a certain degree of variation in characteristics is prevented. There is a quality problem that it cannot be done.

The present invention has been made to solve the above problems, and can significantly reduce the film forming time as compared with the conventional method. An object of the present invention is to provide a film forming apparatus capable of suppressing variation in characteristics.

[0008]

In order to achieve the above object, a film forming apparatus according to the present invention (claim 1) generates thin film material particles from a film forming source and sets a mother substrate set in a film forming chamber. An apparatus for simultaneously forming a thin film at a predetermined position (a plurality of thin film forming portions) where a thin film is to be formed on a plurality of substrates, wherein an arbitrary film is formed for each of the plurality of thin film forming portions. An opening / closing mechanism that operates independently for each thin film forming unit and exposes or shields each thin film forming unit from thin film material particles from a film forming source so that a thick thin film can be formed. It is characterized by having.

A plurality of thin film forming units are operated independently for each thin film forming unit, and are provided with an opening / closing mechanism for exposing or shielding each thin film forming unit from thin film raw material particles from a film forming source. This makes it possible to form a thin film of an arbitrary thickness by controlling the film thickness of each thin film forming portion while simultaneously forming a film on a plurality of thin film forming portions. Compared with the method, the film formation time can be greatly reduced. Therefore, it becomes possible to manufacture an element having a small variation in characteristics extremely efficiently.

In the film forming apparatus of the present invention, the opening / closing mechanism may include: (a) a mask in which an opening having a shape corresponding to a thin film pattern to be formed is formed at a predetermined position; When in the position, a predetermined opening of the mask, a shutter for shielding the thin film raw material particles from the film forming source,
(c) each thin film forming section is provided with a shutter driving mechanism for displacing the shutter so as to be exposed or shielded from thin film raw material particles from a film forming source. I have.

The opening / closing mechanism is to expose or shield a mask in which an opening having a shape corresponding to a thin film pattern to be formed is formed at a predetermined position, a shutter, and each thin film forming portion to thin film raw material particles. And a shutter drive mechanism for displacing the shutter so that a thin film of an arbitrary thickness can be reliably formed for each thin film forming unit without requiring a complicated structure. Is possible, and the present invention can be made effective.

Further, the film forming apparatus according to claim 3 is characterized in that the shutter driving mechanism is configured to displace the shutter from outside the film forming chamber via a wire.

By using a mechanism configured to be able to displace the shutter from outside the film forming chamber via a wire as a shutter driving mechanism, each thin film forming section can be formed with a relatively simple structure. It becomes possible to expose or shield the raw material particles, and it is possible to reliably form a thin film having a desired film thickness for each thin film forming portion, thereby making the present invention more effective. it can. In this configuration, since the shutter drive mechanism can be disposed outside the film forming chamber, there is an advantage that restrictions on constituent materials and the like are reduced.

According to a fourth aspect of the present invention, in the film forming apparatus, the shutter driving mechanism is driven by an electromagnet and operates even when the shutter driving mechanism is disposed in a vacuum film forming chamber to displace the shutter. It is characterized by being constituted.

As a shutter driving mechanism, a mechanism that is driven by an electromagnet, operates even when the shutter is disposed in a vacuum deposition chamber, and is capable of displacing the shutter is used. It is possible to reliably form a thin film of a desired thickness for each thin film forming section without requiring a configuration, and it is possible to arrange a shutter driving mechanism together with a shutter in a film forming chamber. Thus, the degree of freedom in design can be improved with respect to the arrangement position of the shutter drive mechanism and the like.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be shown and features thereof will be described in more detail.

[Embodiment 1] FIG. 1A is a front sectional view showing the configuration of a main part of a film forming apparatus according to an embodiment of the present invention.
FIG. 1B is a bottom sectional view. In the first embodiment, a film forming apparatus used for forming a thin film at a plurality of (many) positions on a mother substrate by a vacuum deposition method will be described as an example. In the film forming apparatus of the first embodiment, a film forming source 2 is provided at the bottom of a film forming chamber (vacuum chamber) 1 operated by vacuum, and a mother substrate 3 is provided at the top. Have been. For convenience, as shown in FIG. 1B, the mother substrate 3 has six portions (thin film forming portions) 3a on which the thin film electrodes E are to be formed, and is an element to be divided therefrom. 13 shows an example in which there are six, but usually a mother substrate from which more elements are cut out is used.

A plurality of openings 4 made of a metal plate and having a shape corresponding to a thin film pattern to be formed on the mother substrate 3 are formed at predetermined positions at positions close to the lower surface of the mother substrate 3. A mask 5 is provided.

Further, a shutter (shielding member) 6 for opening and closing the opening 4 of the mask 5 is provided below the mask 5, and the shutter 6 is driven by a shutter driving mechanism 7 to form a mask. 5 is configured to reciprocate in a horizontal direction between a position where the opening 4 is closed and a position where the opening 4 is opened.

That is, in this embodiment, the shutter 6 is driven via the wire 8 by the shutter drive mechanism 7 disposed outside the film forming chamber 1 and reciprocates in the horizontal direction. I have. Note that an actuator such as an air cylinder or a solenoid can be used as the shutter drive mechanism 7. Further, in the present invention, it is also possible to configure so as to open and close the opening 4 of the mask 5 by rotating the shutter 6.

In FIG. 1B, two shutters 6 are provided.
And only two shutter drive mechanisms 7 are shown,
Actually, the shutters 6 and the shutter driving mechanisms 7 are provided by the number corresponding to the number of the respective thin film forming portions 3a.

The wire 8 is inserted into the film forming chamber 1 via a seal mechanism 9 using an O-ring or the like so that the internal vacuum is not broken.

In this embodiment, the mask 5, the shutter 6, and the shutter driving mechanism 7 are
An opening / closing mechanism 30 that exposes or shields each thin film forming section 3a from thin film raw material particles from the film forming source 2 is configured.

Further, below the shutter 6, a shield plate 10 for shielding and protecting the equipment in the film forming chamber 1 from the thin film raw material particles from the film forming source 2 is provided. .

When a film is formed by using the film forming apparatus having the above-described structure, the film is continuously or predeterminedly formed based on information about a relationship between a film thickness and characteristics obtained in advance or while forming a film. By controlling the opening and closing timing of the shutter 6 based on the information obtained by measuring the characteristics at intervals of, the film formation is simultaneously performed on the plurality of thin film forming portions 3a and the desired It is possible to form a thin film having a thickness. Therefore, compared to the above-described conventional method, an element having less variation in characteristics can be manufactured extremely efficiently.

[Embodiment 2] FIG. 2 is a diagram showing a main configuration of a film forming apparatus according to another embodiment of the present invention. In the second embodiment, a film forming apparatus used for forming thin films at a plurality of (many) positions on a mother substrate by a sputtering method will be described as an example. In this film forming apparatus, a film forming source 2 is provided in an upper part of a film forming chamber (vacuum chamber) 1 operated by vacuum, and a mother substrate 3 is held below the film forming source 2. A substrate holder 11 is provided. The substrate holder 11 is moved by a feed mechanism 21 by means of a substrate holder driving means 20 provided outside the film forming chamber 1.
, And can be transported in the horizontal direction along the guide rail 12.

On the upper surface side of the mother substrate 3, there is provided a mask 5 formed of a metal plate and having openings 4 formed at a plurality of predetermined positions in a shape corresponding to a thin film pattern to be formed on the mother substrate 3. Has been established. Although FIG. 2 shows a state in which two openings 4 are formed in the mask 5, a large number of openings 4 are actually formed in two rows in a direction perpendicular to the paper surface. A mask 5 is used, and a mother substrate 3 is used in which a large number of portions (thin film forming portions) 3a on which thin film electrodes are to be formed are provided in two rows in a direction perpendicular to the paper surface. .

On the upper side of the mask 5, a shutter (shielding member) 6 which is driven by a shutter driving mechanism 17 and operates in a horizontal direction along a guide 16 to open and close each opening 4 of the mask 5 is provided. It is arranged.

In the film forming apparatus according to the second embodiment,
As the shutter driving mechanism 17, a mechanism formed by combining the compression spring 14 and the electromagnet 15 is employed.

Further, a shield plate 10 is disposed above the shutter 6 to shield and protect equipment in the film forming chamber 1 from thin film raw material particles from the film forming source 2.

In the second embodiment, the above-described mask 5, shutter 6, and shutter driving mechanism 17 are used.
However, the opening / closing mechanism 30 that exposes or shields each thin film forming section 3a from the thin film raw material particles from the film forming source 2 is configured.

Next, the operation of the main part of the film forming apparatus of the second embodiment will be described. In the film forming apparatus of the second embodiment, the shutter 6 is normally operated by the urging force of the compression spring 14.
Is pressed to close the shutter 6, whereby the opening 4 of the mask 5 is closed. When forming a film, the shutter 6 moves in the horizontal direction due to the energization of the electromagnet 15, the opening 4 of the mask 5 is opened, and the sputtered particles adhere to the thin film forming portion 3 a of the mother substrate 3. Then, a film is formed. When the film thickness of a certain thin film forming portion 3a reaches a predetermined value, the power supply to the electromagnet 15 is stopped, and the shutter 6 is moved in the horizontal direction by the urging force of the compression spring 14, so that the thin film forming portion 3a By shielding the corresponding openings 4 of the mask 5, the thin film forming portions 3 are formed.
The film formation on a is ended. When the film thickness of each thin film forming portion 3a reaches a predetermined value, the shutter 6 is sequentially turned on.
Is moved in the horizontal direction, the openings 4 of the mask 5 corresponding to the predetermined thin film forming portions 3a are shielded, and sputtering is performed at the time when the film formation of the predetermined thickness is performed on all the thin film forming portions 3a. Stop. This makes it possible to simultaneously form a film on the plurality of thin film forming portions 3a and efficiently form a thin film having a desired film thickness on each of the thin film forming portions.

In the film forming apparatus of the second embodiment, as described above, based on the information about the relationship between the film thickness and the characteristics obtained in advance, or continuously or at a predetermined interval while forming the film. By controlling the timing of opening and closing the shutter 6 based on the information obtained by measuring the characteristics at the same time, the desired film thickness is formed on each of the thin film forming portions while simultaneously forming the film on the plurality of thin film forming portions 3a. Can be formed.

In the second embodiment, all the shutters 6 are opened at the start of sputtering, and the shutters 6 are sequentially closed when a predetermined film thickness is reached. Sometimes, the shutter 6 is closed, and the shutters 6 are sequentially opened based on information obtained in advance, starting from the one with the longest set time required for film formation.
It is also possible to configure so that all the shutters 6 are closed at the same time after the film formation is completed.

In the first and second embodiments, the case where thin films are formed at a plurality (many) positions of the mother substrate has been described as an example. The present invention can be applied to a case where one or a plurality of thin film patterns are formed. In such a case, the same effects as those of the first and second embodiments can be obtained.

In the first and second embodiments, the case where a thin film is formed on a mother substrate by a vacuum deposition method and a sputtering method has been described as an example. However, the present invention is not limited to the vacuum deposition method and the sputtering method. The present invention can be widely applied to the case where a thin film is formed by various thin film forming methods in which thin film material particles are supplied in a directional manner.

In other respects, the present invention is not limited to the above embodiment.
With respect to the type of the thin film material, the shape of the substrate, the constituent material, and the like, various applications and modifications can be made within the scope of the invention.

[0038]

As described above, the film forming apparatus of the present invention operates independently for each of the plurality of thin film forming units,
By providing an opening and closing mechanism for exposing or shielding each thin film forming unit from thin film raw material particles from the film forming source, each thin film forming unit can be simultaneously formed on a plurality of thin film forming units. It is possible to form a thin film having an arbitrary film thickness by controlling the film thickness every time, and it is possible to greatly shorten the film forming time as compared with the above-described conventional film forming method. Therefore, it is possible to extremely efficiently manufacture an element having a small variation in characteristics.

According to a second aspect of the present invention, an opening / closing mechanism includes a mask having an opening corresponding to a thin film pattern to be formed at a predetermined position; a shutter;
When a configuration is provided that includes a shutter driving mechanism that displaces a shutter so that each thin film forming section can be exposed or shielded from thin film raw material particles, each thin film formation can be performed without a complicated configuration. A thin film having an arbitrary thickness can be reliably formed for each part, and the present invention can be made effective.

According to a third aspect of the present invention, in the case where a mechanism configured to be able to displace the shutter from outside the film forming chamber via a wire is used as the shutter driving mechanism, With a relatively simple configuration, each thin film forming portion can be exposed or shielded from the thin film raw material particles, and a thin film having a desired thickness can be reliably formed for each thin film forming portion. This allows the present invention to be more effective.

Further, as in the film forming apparatus of the fourth aspect, the shutter can be displaced by being driven by an electromagnet as a shutter driving mechanism and operating even when the shutter is disposed in a vacuum film forming chamber. When an actuator configured as described above is used, it is possible to reliably form a thin film having a desired film thickness for each thin film forming unit without requiring a complicated structure, and to provide a shutter driving mechanism. It can be installed in the deposition chamber together with the shutter,
The degree of freedom in design can be improved.

[Brief description of the drawings]

FIG. 1 is a view showing a main configuration of a film forming apparatus according to an embodiment (Embodiment 1) of the present invention, wherein FIG.
(b) is a bottom sectional view.

FIG. 2 is a diagram showing a main configuration of a film forming apparatus according to another embodiment (Embodiment 2) of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Film-forming chamber (vacuum chamber) 2 Film-forming source 3 Mother substrate 3a Portion where thin-film electrode is to be formed (thin-film forming portion) 4 Opening 5 Mask 6 Shutter (shielding member) 7, 17 Drive mechanism 8 Wire 9 Seal mechanism 10 Shield plate 11 Substrate holder 12 Guide rail 13 Element 14 Compression spring 15 Electromagnet 16 Guide 20 Substrate holder driving means 21 Feed mechanism 30 Opening / closing mechanism E Thin film electrode

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4K029 BB03 CA01 CA05 DA12 DB00 DC00 EA01 HA01 4M104 DD34 DD37 DD39 HH20 5F103 AA01 AA08 BB16 BB53 BB58 RR05 RR08

Claims (4)

[Claims] A thin film material particle is generated from a film forming source, and is simultaneously placed at predetermined positions (a plurality of thin film forming portions) where a thin film is to be formed on a mother substrate or a plurality of substrates set in a film forming chamber. An apparatus for forming a thin film, wherein each of the plurality of thin film forming sections operates independently for each thin film forming section so that a thin film of an arbitrary thickness can be formed for each thin film forming section. A film forming apparatus, comprising: an opening / closing mechanism for exposing or shielding a thin film forming section from thin film material particles from a film forming source. 2. An opening and closing mechanism comprising: (a) a mask in which an opening having a shape corresponding to a thin film pattern to be formed is formed at a predetermined position; and (b) when the mask is at a predetermined position, A shutter for shielding a predetermined opening from thin film raw material particles from a film forming source; and (c) each thin film forming section can be exposed or shielded from thin film raw material particles from a film forming source. 2. The film forming apparatus according to claim 1, further comprising a shutter driving mechanism for displacing the shutter. 3. The film forming apparatus according to claim 1, wherein the shutter driving mechanism is configured to displace the shutter from outside the film forming chamber via a wire. 4. A shutter driving mechanism which is driven by an electromagnet, operates even when disposed in a vacuum deposition chamber, and is capable of displacing a shutter. The film forming apparatus according to claim 1, wherein: