JP2000319091A - Liquid phase epitaxial growth apparatus and liquid phase epitaxial growth method - Google Patents

Abstract

(57) [Summary] [PROBLEMS] To make the thickness of a growth layer at the center part and the outer peripheral part of a substrate uniform, thereby enabling mass production. SOLUTION: A rotating body 3 is covered with a lid 16 by a growth chamber 6.
Is closed. The rotating ring 1 is attached to the lid 16.
7 and a rotating rod holder 18 are provided. Thus, at the time of growth, the substrate holder 7 and the rotating body 3 are rotated by the rotating rod 13, and the stirring of the growing melt is promoted by the rotating ring 17. As a result, the growth rate becomes constant, and the thickness of the growth layer at the peripheral portion and at the central portion becomes uniform. Moreover, the stirring in that case does not hinder mass production. Further, at the time of cooling in the atmosphere gas after the growth is completed, the rotation of the substrate holding unit 7 and the rotating body 3 is stopped, and the opening 15 of the growth chamber 6 is closed by the lid 16. Thus, the contact between the atmospheric gas and the substrate 12 and the growth melt is prevented, and abnormal growth around the substrate 12 is suppressed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid phase epitaxial growth apparatus and a liquid phase epitaxial growth method particularly used for manufacturing a semiconductor light emitting device.

[0002]

2. Description of the Related Art In general, an epitaxially grown layer of a liquid phase epitaxially grown wafer (hereinafter, simply referred to as an "epiwafer") tends to be difficult to obtain in-plane uniformity. Specifically, the epi wafer tends to be thin at the center and thick at the periphery. The non-uniformity of the thickness of the epi-wafer is disadvantageous not only in that uniform characteristics cannot be obtained from the semiconductor light-emitting device to be formed but also in productivity because the semiconductor light-emitting device is not suitable for production. Therefore, there is a demand for a liquid phase epitaxial growth apparatus or a liquid phase epitaxial growth method capable of forming an epiwafer in which the thickness of the epitaxial growth layer is uniform in the peripheral portion and the central portion and the characteristics thereof are also uniform.

Therefore, conventionally, the following method has been proposed as a method for forming an epi-wafer in which the thickness of the epitaxial growth layer is uniform in the peripheral portion and the central portion and the characteristics thereof are also uniform.

First, in a method of manufacturing a semiconductor device disclosed in Japanese Patent Application Laid-Open Nos. 60-250620 and 60-250621, a melt containing a material to be subjected to liquid phase epitaxial growth is stirred with a rod. The growth rate is kept constant by further saturating the melt. Also, Japanese Patent Application Laid-Open No. 9-129565
In the semiconductor liquid phase epitaxy apparatus disclosed in the official gazette, a melt agitating projection extending radially from the center of the support plate is provided on the surface of a support plate that supports the back surface of a vertical substrate on which a crystal is grown. Provided. By rotating the support plate, stirring of the melt during crystal growth is promoted.

[0005]

However, the above-mentioned conventional liquid phase epitaxial growth has the following problems. First, in the case of the method of manufacturing a semiconductor device disclosed in JP-A-60-250620 and JP-A-60-250621, a melt containing a material to be grown is stirred with a rod as described above. Therefore, there is a problem that it is not suitable for mass production.

[0006] The semiconductor liquid phase epitaxial apparatus disclosed in Japanese Patent Application Laid-Open No. 9-129565 is suitable for mass production, and has a uniform thickness during forced growth. However, during the natural cooling after the forced growth, if a gas for lowering the donor concentration is always supplied at the time of forming the PN junction, the growth chamber becomes unnecessarily open space, so that a new atmosphere gas is required. There is a problem in that the substrate and the melt come into contact with each other, the periphery of the substrate grows abnormally, the thickness becomes non-uniform, and the crystal quality deteriorates.

Accordingly, an object of the present invention is to provide a liquid-phase epitaxial growth apparatus and a liquid-phase epitaxial growth method capable of uniformizing the thickness of a growth layer at the central portion and the outer peripheral portion of a substrate, improving crystal quality, and enabling mass production. To provide.

[0008]

In order to achieve the above object, the invention according to claim 1 is directed to a liquid phase epitaxial growth apparatus for supplying a dopant necessary for epitaxial growth to a growth melt in a growth boat by an atmospheric gas. The growth boat has a growth chamber, and is characterized in that it has a lid that closes an opening of the growth chamber and blocks contact between the atmospheric gas, the growth melt, and the substrate.

According to the above structure, the epitaxial growth is performed by supplying the dopant to the growth melt by the atmospheric gas through the opening of the growth boat. Then, when the growth is completed and the process proceeds to the natural cooling, the opening of the growth boat is closed by the lid, and the contact between the new atmosphere gas and the growth melt and the substrate is cut off. Thus, the subsequent epitaxial growth by the atmospheric gas is suppressed.

According to a second aspect of the present invention, there is provided a liquid phase epitaxial growth apparatus for supplying a dopant necessary for epitaxial growth to a growth melt in a growth boat by using an atmosphere gas, wherein the rotating body agitates the growth melt by rotation. It is characterized by having.

According to the above configuration, the stirring of the growth melt is promoted with the rotation of the rotating body, the composition distribution of the growth melt becomes uniform, and the epitaxial growth rate becomes more constant. Thus, an epitaxial growth layer having a uniform thickness at the outer peripheral portion and the central portion of the substrate is formed.

According to a third aspect of the present invention, in the liquid-phase epitaxial growth apparatus according to the second aspect, the rotating body is formed in an annular shape so as to always contact the growth melt during epitaxial growth. It is characterized by being.

According to the above configuration, since the rotating body is always in contact with the growing melt, the contact area between the growing melt and the atmosphere gas is reduced. Therefore, heat radiation at the interface between the growth melt and the atmospheric gas is reduced, and the epitaxial growth rate is further constant.

According to a fourth aspect of the present invention, in the liquid-phase epitaxial growth apparatus according to the second or third aspect, the growth boat has a growth chamber, holds a substrate, and is provided in the growth chamber. It is characterized in that the rotating body is provided with the substrate holding part to be mounted, and is externally mounted on the substrate holding part, and is rotatable integrally with the substrate holding part.

According to the above construction, the rotator is externally mounted on the substrate holder and is rotatable integrally therewith. Therefore, a rotating means such as a rotating rod conventionally used for rotating the substrate holder is used. As a result, the rotating body is rotated. Thus, the rotating body is rotated without hindering mass production of the epitaxial growth substrate.

According to a fifth aspect of the present invention, in the liquid-phase epitaxial growth apparatus according to the fourth aspect of the present invention, the rotating body closes an opening of the growth chamber in a stopped state to close the growth gas and the atmosphere gas. It is characterized by having a lid for blocking contact with the liquid and the substrate.

According to the above configuration, the rotating body has a function of stirring the growth melt and a function of blocking contact between the atmosphere gas and the growth melt and the substrate. Therefore, at the time of growth, the growth melt is stirred without hindering mass production of the epitaxial growth substrate. Further, at the time of shifting to natural cooling, the contact between the new atmosphere gas and the growth melt and the substrate is cut off, and the subsequent epitaxial growth by the atmosphere gas is suppressed.

According to a sixth aspect of the present invention, there is provided a liquid phase epitaxial growth method for supplying a dopant necessary for epitaxial growth to a growth melt by using an atmosphere gas, wherein the atmosphere gas and the growth melt are cooled during natural cooling after the epitaxial growth. Further, it is characterized in that the contact with the substrate is cut off to suppress the epitaxial growth.

According to the above configuration, at the time of growth, the dopant is supplied to the growth melt by the atmospheric gas to perform epitaxial growth. Then, at the time of shifting to natural cooling, the contact between the new atmosphere gas and the growth melt and the substrate is cut off, and the subsequent epitaxial growth by the atmosphere gas is suppressed. Thus, an epitaxial growth layer having a uniform thickness at the outer peripheral portion and the central portion of the substrate is formed.

According to a seventh aspect of the present invention, there is provided a liquid-phase epitaxial growth method for supplying a dopant necessary for epitaxial growth to a growth melt by an atmospheric gas, the method comprising a rotating substrate holder and a rotating body. The growth melt is agitated by rotation of the holding unit and the rotating body.

According to the above configuration, the rotation of the rotating body further promotes the stirring of the growth melt by the rotation of the substrate holding unit. Therefore, the composition distribution of the growth melt becomes more uniform than the stirring of the substrate holding portion alone, and the epitaxial growth rate becomes more constant. Thus, an epitaxial growth layer having a uniform thickness at the outer peripheral portion and the central portion of the substrate is formed.

[0022]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the illustrated embodiments. FIG. 1 is a schematic configuration diagram of a liquid phase epitaxial growth apparatus of the present embodiment. FIG. 2 is a sectional view taken along the line AA in FIG. This liquid phase epitaxial growth apparatus is roughly constituted by a heating furnace 1, a growth boat 2, and a rotating body 3. However, in FIG. 1, the heating furnace 1 is shown only by the outer shell. Growth boat 2
Has a cylindrical shape, and is partitioned by a partition plate 4 into two layers, a melt storage chamber 5 and a growth chamber 6. Then, the operation stick 22
By operating the piston 21 from the outside, the melt in the melt reservoir 5 can be supplied to the growth chamber 6 from the upper notch 4a of the partition plate 4. In the growth chamber 6, a substrate holding unit 7 is mounted during growth.

The substrate holding portion 7 is of a vertical substrate type, in which three support rods 8 are arranged in parallel, and both ends of each of the support rods 8 are disk-shaped support rod holding plates 9, 10 respectively. Is held in. A disc-shaped support plate 1 is provided between the support rods 8.
1 are attached at predetermined intervals in the vertical direction. Then, the semiconductor substrate 12 placed vertically is attached to each support plate 1.
It is supported by one surface. Further, at the center of the support rod holding plate 10 located on the opposite side to the melt storage chamber 5, a rotary rod connection for fitting / connecting to a tip of a rotary rod 13 for rotating the entire substrate holding portion 7 about an axis. Part 14
Is provided.

In the present embodiment, a slit-shaped opening 15 extending in the longitudinal direction is provided on the upper portion of the growth boat 2.
The opening 15 of the growth chamber 6 can be closed by the lid 16 of the rotating body 3. Side portions of a plurality of rotating rings 17 made of an annular thin plate are attached to the lid 16 at predetermined intervals. In addition, at one end of the lid 16, a rotating rod holder 18 having an opening 18 a penetrated by the rotating rod 13 is provided. However, the opening 18a of the rotating rod holder 18 is non-circular, and the cross-sectional shape of the rotating rod 13 is shaped to fit into the opening. Therefore, when the rotating rod 13 is rotated, the rotating body 3 is also rotated.

Here, the lid 16 of the rotator 3 is adapted to rotate with a slight gap from the inner peripheral surface of the growth boat 2. When the rotating body 3 stops at the position of the opening 15 of the growth boat 2, the cover 16
The small gap between the outer peripheral surface of the growth boat 2 and the inner peripheral surface of the growth boat 2 is closed by the growth melt attached to the outer peripheral surface of the lid 16 and the inner peripheral surface of the growth boat 2 by the rotation of the rotating body 3. Will be. Thus, the contact between the growth melt and the atmospheric gas is cut off.

Then, the melt reservoir 5 of the growth boat 2
The side is closed by a first boat lid 19, while the growth chamber 6 side is closed by a second boat lid 20. In addition, the second boat lid 20
Has an opening 20a which is penetrated by the rotating rod 13 to hold the rotating rod 13 rotatably.

The liquid phase epitaxial growth apparatus having the above configuration operates as follows to grow a semiconductor light emitting device. In the following description, a GaP light emitting device (green)
Performing the growth of an example. FIG. 3 shows a temperature profile of crystal growth in that case.

First, the n-type GaP substrate 12 is
Is set as described above. Then, the substrate holder 7 on which the n-type GaP substrate 12 is set is inserted and set along the axis into the growth chamber 6 of the growth boat 2. next,
The rotating body 3 is inserted into the growth boat 2 so that the rotating ring 17 covers the substrate holding unit 7, and the second boat lid 2 is
By 0, the growth chamber 6 side of the growth boat 2 is closed.
Note that the melt storage chamber 5 side is first closed by the first boat lid 19. And the rotating rod 13 is the second boat lid 2
The tip of the support rod holding plate 10 is fitted / coupled to the rotary rod connecting part 14 of the support rod holding plate 10 by being inserted through the openings 20a and 18a of the rotating rod holding part 18 and the rod. Next, the opening 15 is added to the melt storage chamber 5.
After the GaP polycrystal, Si and Ga solutions are stored in the furnace, the growth boat 2 is put into the heating furnace 1.

Next, hydrogen gas as a carrier gas
Supplied into the heating furnace 1 at a flow rate of
The temperature was raised to a temperature of ° C. to melt the GaP polycrystal and Si to obtain a growth melt. Then, at a temperature of 1000 ° C., the growth chamber 6 in which the n-type GaP substrate 12 is set.
Then, the growth melt is supplied from the melt reservoir 5 by operating the piston 21 with the operation rod 22. And immediately, the rotating rod 1
3, the substrate holder 7 and the rotating body 3 are rotated.

Next, the n-type GaP substrate 12 is
It is cooled to 900 ° C. at a cooling rate of / min. At this time, Si in the growth melt is doped, and n-type Ga
An n-type GaP layer is formed on P substrate 12. And N
H ₃ gas is supplied and the state at 900 ° C. is maintained for about 30 minutes. This is the time for reacting the NH ₃ gas with the GaP melt, the donor concentration is reduced, and nitrogen, which is the emission center, is added.

Here, during the above epitaxial growth,
Rotating ring 1 attached to lid 16 of rotator 3
Stirring of the growth melt is promoted by the rotation of 7, and the composition distribution of the growth melt becomes more uniform than in the case of stirring only by the substrate holding unit 7. Therefore, the epitaxial growth rate becomes constant, and an epitaxial growth layer having a uniform thickness at the peripheral portion and the central portion of the substrate can be obtained. Further, the rotating ring 17 is formed in an annular shape, and is always in contact with the growth melt. Accordingly, the contact area between the growth melt and the atmosphere gas is reduced, and heat radiation at the interface between the growth melt and the atmosphere gas is reduced. Thus, the epitaxial growth rate becomes further constant.

Next, the n-type GaP substrate 12 is heated to 850 ° C.
Cooled down. At this time, a low concentration layer controlled by the background carrier concentration is formed.
Zn, which is an acceptor vaporized at ℃, is supplied,
A p-type GaP layer is grown until the temperature of the GaP substrate 12 reaches 800 ° C.

The temperature of the GaP substrate 12 is set to 80
When the temperature reaches 0 ° C., the rotation of the substrate holding unit 7 and the rotating body 3 is controlled by the lid 16 of the rotating body 3 so that the opening 1 of the growth chamber 6 is opened.
5 is stopped at the closed position. After that, it is cooled to room temperature in an atmosphere of Ar gas supplied at a flow rate of 1 liter / min.

In this case, since the opening 15 of the growth chamber 6 is closed by the lid 16, the growth chamber 6 becomes a closed space, and the Ar gas does not contact the GaP substrate 12 and the growth melt. Therefore, epitaxial growth can be minimized, and abnormal growth around the GaP substrate 12 can be suppressed.

The GsP epitaxial growth substrate obtained as described above was taken out, a part of the substrate was cleaved, and the wall surface was etched. Then, the thickness of each growth layer was measured. As a result, as shown in FIG. 4, the thickness of the n-type epitaxial growth layer in the open wall is 35 μm to 40 μm, the thickness of the low concentration layer is 7 μm to 8 μm, and the thickness of the p-type epitaxial growth layer is It is 52 μm to 57 μm. The variation in each is 1.94 μm in the n-type epitaxial growth layer, 0.42 μm in the low concentration layer, and p
It is 1.99 μm in the type epitaxial growth layer. In addition, the said dispersion | variation was calculated | required by the unbiased dispersion of the layer thickness when measuring several points (5 points in FIG. 3) in the said wall open surface.
Further, in FIG. 3, “1” and “5” of the above five points are peripheral portions of the substrate, and “3” is a central portion.

On the other hand, G grown by a conventional liquid phase epitaxial growth apparatus without using the rotating body 3 was used.
The in-plane growth layer thickness of the aP epitaxial growth substrate is such that the n-type epitaxial growth layer has a thickness of 33 μm to 42 μm, the low concentration layer has a thickness of 8 μm to 10 μm, and the p-type epitaxial growth layer has a thickness of 52 μm to 63 μm. is there. The variation (unbiased dispersion) in each is 3.12 μm in the n-type epitaxial growth layer and 0.7 in the low concentration layer.
6 μm, and 4.39 μm in the p-type epitaxial growth layer.
m.

From the above, according to the liquid phase epitaxial growth apparatus of the present embodiment, the variation in the thickness of each growth phase is reduced as compared with the case where the conventional liquid phase epitaxial growth apparatus without the rotating body 3 is used. At least 30% can be reduced.

As described above, the liquid phase epitaxial growth apparatus of the present embodiment has the rotating body 3 that closes the opening 15 provided in the growth boat 2 with the lid 16. The cover 16 is provided with a rotating ring 17 and a rotating rod holder 18 for fitting / holding the rotating rod 13 to be mounted on the substrate holder 7.

Therefore, during epitaxial growth,
The substrate holder 7 and the rotating body 3 are both rotated by the rotating rod 13, and the growth melt is stirred by the rotating ring 17 of the lid 16. In this way, the composition distribution in the growth melt is made uniform, the growth rate becomes constant, and an epitaxial wafer having a uniform thickness at the peripheral portion and the central portion is obtained. In this case, the stirring is performed by the rotating operation of the rotating body 3 interlocked with the rotation of the substrate holding unit 7, and thus does not hinder mass production of the crystal growth substrate.

Further, when cooling to room temperature in a new atmosphere gas after the formation of the epitaxial growth layer is completed, the rotation of the substrate holding unit 7 and the rotating body 3 is stopped, and the lid 16 of the rotating body 3 is closed. The opening 15 of the growth chamber 6 can be closed. Therefore, it is possible to prevent the atmosphere gas from coming into contact with the substrate 12 and the growth melt, and to suppress abnormal growth around the epitaxial growth substrate 12.

Therefore, according to the present embodiment, the crystal quality can be improved by making the thicknesses of the growth layers at the central portion and the outer peripheral portion of the substrate uniform. Further, the crystal growth substrate can be mass-produced.

In the above-described embodiment, the rotary ring 17 is formed in a circular shape and is rotated about its center. However, the rotary ring 17 may be non-circular such as an ellipse or may be eccentric. The stirring effect may be further enhanced by twisting the rotating ring itself.

[0043]

As is apparent from the above description, the liquid phase epitaxial growth apparatus according to the first aspect of the present invention closes the opening of the growth chamber in the growth boat with the lid.
Since the contact between the atmosphere gas, the growth melt, and the substrate is cut off, when the growth is completed and the process shifts to natural cooling, the opening of the growth chamber is closed by a lid to form a closed space. Can be. Therefore, the contact between the new atmosphere gas and the growth melt and the substrate can be cut off, and the subsequent epitaxial growth by the atmosphere gas can be suppressed.

That is, according to the present invention, abnormal growth around the substrate after forced epitaxial growth can be suppressed, and an epitaxial growth layer having a uniform thickness at the outer peripheral portion and the central portion of the substrate can be formed. Further, the crystal quality can be improved.

In the liquid phase epitaxial growth apparatus according to the second aspect of the present invention, the growth melt is agitated by the rotation of the rotator, so that the growth melt is stirred with the rotation of the rotator. This is promoted, and the composition distribution of the grown melt becomes more uniform than in the case of stirring only by the substrate holding unit. Accordingly, the epitaxial growth rate becomes more constant, and an epitaxial growth layer having a uniform thickness at the outer peripheral portion and the central portion of the substrate can be formed.

According to a third aspect of the present invention, in the liquid-phase epitaxial growth apparatus according to the second aspect of the present invention, the rotator has an annular shape and is always in contact with the growth melt during epitaxial growth. Therefore, the contact area between the growth melt and the atmosphere gas can be reduced. Therefore, the heat radiation at the interface between the growth melt and the atmospheric gas can be reduced, and the epitaxial growth rate can be kept constant.

In the liquid-phase epitaxial growth apparatus according to the fourth aspect of the present invention, the rotating body is mounted on a substrate holding portion and is rotatable integrally with the substrate holding portion. The rotating body can be rotated by rotating means used for rotating the part. Therefore,
The rotating body can be rotated without hindering mass production of the epitaxial growth substrate.

In the liquid-phase epitaxial growth apparatus according to the fifth aspect of the present invention, when the rotating body is stopped, the opening of the growth chamber in the growth boat is closed to allow the rotation of the atmosphere gas, the growth melt, and the substrate. Since the rotating body has the lid that blocks the contact, the rotating body can have a function of stirring the growth melt and a function of closing the growth chamber. Therefore, at the time of growth, the growth melt can be stirred without hindering mass production of the epitaxial growth substrate, and the composition distribution of the growth melt can be made uniform. On the other hand, at the time of natural cooling, the contact between the new atmosphere gas and the growth melt and the substrate is cut off, and the subsequent epitaxial growth by the atmosphere gas can be suppressed.

In the liquid phase epitaxial growth method according to the present invention, the contact between the atmosphere gas and the growth melt and the substrate is suppressed during natural cooling after the epitaxial growth to suppress the epitaxial growth. Abnormal epitaxial growth after the completion of the process can be suppressed. Therefore, the epitaxial growth layer having a uniform thickness can be formed at the outer peripheral portion and the central portion of the substrate while minimizing the epitaxial growth to a necessary minimum. Further, the crystal quality can be improved.

In the liquid phase epitaxial growth method according to the present invention, since the growth melt is agitated by rotation of the substrate holder and the rotating body, the composition distribution of the growth melt is limited to only the substrate holder. And the epitaxial growth rate can be made more constant. Therefore,
An epitaxial growth layer having a uniform thickness can be formed at the outer peripheral portion and the central portion of the substrate.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of a liquid phase epitaxial growth apparatus of the present invention.

FIG. 2 is a sectional view taken along the line AA in FIG.

FIG. 3 is a diagram showing a temperature profile when a GaP light emitting device is formed by the liquid phase epitaxial growth apparatus shown in FIG.

FIG. 4 is a view showing the thickness of each growth layer grown by the liquid phase epitaxial growth apparatus shown in FIG.

[Explanation of symbols]

1 ... heating furnace, 2 ... growth boat, 3 ... rotating body,
5: Melt chamber, 6: Growth chamber,
7: Substrate holding part, 12: Semiconductor substrate, 13: Rotating rod, 14: Rotating rod connecting part, 15: Opening, 16: Lid,
17: rotating ring, 18: rotating rod holder, 19: first boat lid, 2
0 ... Second boat lid.

Claims (7)

[Claims] 1. A liquid phase epitaxial growth apparatus for supplying a dopant required for epitaxial growth to a growth melt in a growth boat by an atmosphere gas, wherein the growth boat has a growth chamber, and an opening of the growth chamber is closed. A liquid phase epitaxial growth apparatus comprising a lid for blocking contact between the atmosphere gas, the growth melt and the substrate. 2. A liquid phase epitaxial growth apparatus for supplying a dopant necessary for epitaxial growth to a growth melt in a growth boat by an atmospheric gas, comprising a rotating body for stirring the growth melt by rotation. Liquid phase epitaxial growth equipment. 3. The liquid phase epitaxial growth apparatus according to claim 2, wherein the rotating body forms an annular shape and is always in contact with the growth melt during epitaxial growth. apparatus. 4. The liquid-phase epitaxial growth apparatus according to claim 2, wherein the growth boat has a growth chamber, holds a substrate, and includes a substrate holding unit mounted in the growth chamber. The liquid phase epitaxial growth apparatus, wherein the rotator is mounted on the substrate holder and is rotatable integrally with the substrate holder. 5. The liquid phase epitaxial growth apparatus according to claim 4, wherein the rotating body closes an opening of the growth chamber in a stopped state to cut off contact between the atmosphere gas, the growth melt and the substrate. Liquid phase epitaxial growth apparatus characterized by having a lid. 6. A liquid phase epitaxial growth method for supplying a dopant necessary for epitaxial growth to a growth melt by means of an atmosphere gas, wherein the contact between the atmosphere gas and the growth melt and the substrate is interrupted during natural cooling after the epitaxial growth. A growth method for suppressing epitaxial growth. 7. A liquid phase epitaxial growth method for supplying a dopant necessary for epitaxial growth to a growth melt by an atmospheric gas, comprising: a rotating substrate holder and a rotating body; A liquid phase epitaxial growth method, wherein the growth melt is stirred.