JP2000307362A - Microwave amplifier circuit, dielectric substrate raw material and microwave amplifier circuit components - Google Patents

Abstract

(57) [Summary] [PROBLEMS] To reduce the cost and stabilize the performance of a microwave amplifier circuit or a part thereof alone. SOLUTION: In a microwave amplifier circuit mounted on a single dielectric substrate 21 having a predetermined area, the dielectric substrate 21 corresponding to each part of the choke pattern 3 of the microwave amplifier circuit and the distributor / synthesizer 4 is provided. Was selectively set to be lower than other portions.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microwave amplifier circuit, a raw material of a dielectric substrate, and a microwave amplifier circuit component, and more particularly to a setting of a dielectric constant of a dielectric substrate.

[0002]

2. Description of the Related Art FIG. 13 is a perspective view showing an example of a conventional microwave amplifying circuit. In FIG. 13, the surface of a dielectric substrate 20 such as a ceramic, which is connected so as to be connected to each other, is provided. RF transistor 1, input or output matching circuit 2, high frequency chip capacitor 5 for DC cut, chip capacitor 6 for bias, RF terminator 7, or distribution / combination circuit 1 of, for example, an interdigital type
5 and so on constitute a microwave amplifier circuit as a whole.

The RF transistor 1 amplifies and outputs an input RF, the chip capacitor 5 allows only RF to pass, and the chip capacitor 6 constitutes a bias circuit and is not particularly concerned with microwaves. , R
The F terminator 7 terminates the RF reflected by the terminator at 50Ω and absorbs the RF. The matching circuit 2 performs matching between input and output, and the distribution / combination circuit 15 distributes or combines microwaves. The microwave amplification circuit according to the prior art has a specific circuit component mounted on a single substrate 20 made of, for example, Teflon, glass epoxy, ceramic, duroid, or higher dielectric substrate. Are fixed by screws or the like, respectively, and a ribbon connection or the like is performed to form a high-frequency transmission line.

[0004]

However, since the conventional microwave amplifier circuit is composed of a high-dielectric substrate in the design of the integrated substrate circuit, a fine pattern is formed by this substrate and the distribution / combination unit and the choke pattern unit. If there is a part, it can not be realized due to restrictions on pattern accuracy,
There was a problem with performance stabilization. Therefore, there has been a problem that the size is increased when a low dielectric substrate is used.
For this reason, since the board is formed by connecting the substrates divided to some extent, there are problems in terms of the number of assembling steps, manufacturing variations, and costs. In addition, a circuit or a part thereof is manufactured as a circuit or a part by chamfering a mounting portion on which a circuit or a part thereof is to be mounted from a raw material of a dielectric substrate to a predetermined area and mounting the chamfered portion. However, in the case of multiple circuit boards of a single substrate, expensive high-frequency substrate materials are also used for the cut-off portions, so that the raw materials themselves are expensive, and there is a problem in reducing costs. .

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it has been made possible to reduce a variation in a fine pattern portion which is critical in pattern accuracy and to realize a circuit configuration which cannot be realized due to a limitation in manufacturing. The purpose is. It is another object of the present invention to reduce the size of the circuit by increasing the dielectric constant of a portion that is not critical to pattern accuracy to a degree that does not affect performance variations. Furthermore, since the substrate material used to be a uniform substrate in the past, the cost of the high-frequency substrate material that had been cut off in the processing of the high-cost substrate material had been refunded, but in the present invention, a low-cost dielectric was used for the cut-off portion. And the total cost can be reduced.

[0006]

According to the first aspect of the present invention, the dielectric constant of a part of a dielectric substrate corresponding to a circuit of a specific part of a microwave amplifying circuit is selectively made different from that of the other part. It is.

According to a second aspect of the present invention, the mounting portion is formed of a high-frequency substrate material, and the cut-off portion other than the mounting portion is formed of a low-cost substrate material.

According to a third aspect of the present invention, a portion having a reduced dielectric constant is provided, and this portion is a portion corresponding to a choke pattern portion of a microwave amplifier circuit.

According to a fourth aspect of the present invention, a portion having a reduced dielectric constant is provided, and this portion is a portion corresponding to the distribution / combination unit of the microwave amplifier circuit.

According to a fifth aspect of the present invention, the dielectric constant of a part of the dielectric substrate corresponding to a specific part in the microwave amplification circuit component is selectively made different from other parts.

According to a sixth aspect of the present invention, the microwave amplification circuit component is constituted by a broadband branch circuit, and the permittivity of a portion corresponding to the fine pattern portion of the circuit is set lower than the permittivity of other portions. It is.

According to a seventh aspect of the present invention, the microwave amplifier circuit component is constituted by an interdigital coupler, and the dielectric constant of a portion corresponding to the fine pattern portion of the circuit is set lower than the other dielectric constants. .

According to an eighth aspect of the present invention, the microwave amplifying circuit component is constituted by a matching circuit, and a dielectric constant of a portion corresponding to a portion of the choke pattern of the circuit is set lower than other dielectric constants.

According to a ninth aspect of the present invention, the microwave amplifying circuit component is constituted by a matching circuit, and a dielectric constant of a portion corresponding to a fine pattern portion of the circuit is set lower than other dielectric constants.

According to a tenth aspect of the present invention, the dielectric constant of the portion corresponding to the portion of the conductor pattern near the case wall surface of the microwave amplifier circuit component is set higher than the other dielectric constants.

According to an eleventh aspect of the present invention, a bias capacitor is formed such that a portion having a high dielectric constant is provided, and a layer of the portion is sandwiched between conductors.

According to a twelfth aspect of the present invention, the microwave amplifying circuit component is constituted by a discrete transistor, and a dielectric constant of a portion corresponding to a portion of the triplate line of the discrete transistor is set lower than other dielectric constants. is there.

[0018]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a perspective view showing a microwave amplifier circuit according to the present invention. In FIG. 1, reference numeral 21 denotes a substrate made of a dielectric and having a predetermined area, on which various circuits are mounted. 1 is an RF transistor. Reference numeral 3 denotes a choke pattern portion, which comprises a pattern for supplying a bias without significantly affecting the impedance of the matching circuit, and has the same effect as that of the choke coil. Usually, it is designed so that the impedance on the bias side becomes difficult to see with a length of λ / 4.
4 is a divider / combiner, the former is a 3 dB divider, the latter is 3 dB
It is a synthesizer, and an example is an interdigital type of 90 ° 3 dB coupler. Reference numeral 5 denotes a DC cut capacitor that passes RF. Reference numeral 6 denotes a bias capacitor, which constitutes a bias circuit and is not particularly related to microwaves. Reference numeral 7 denotes a terminator, which reflects the reflected RF to 5
Terminate at 0Ω and absorb. Reference numeral 8 denotes a microstrip line that conducts RF. FIG. 2 shows an equivalent circuit of the microwave amplification circuit having such a configuration. As shown in FIG. 2, a multi-stage amplifier (two combinations) is configured.

The transistor 1 has a substrate 2 for adjusting the lead height of the transistor 1.
The height is adjusted by cutting one side. For example, the substrate 21
Is about 0.6 mm, and the thickness when a carrier is made of Kovar or the like under the substrate 21 is about 0.5 mm, and when the total of these is about 1.1 mm, Since the height of the transistor 1 is about 2 mm, the structure in which the lead height and the connection surface of the substrate 21 are flush with each other in consideration of the VSWR and the like is preferable. In this case, a portion of the substrate 21 corresponding to the portion of the choke pattern 3 and the portion of the distributor / synthesizer 4 has a lower dielectric constant than other portions so as not to affect the performance variation. That is, the dielectric constant is selectively changed. As a method for selectively lowering the dielectric constant in this way, a technique has recently been developed in which substrates having different dielectric constants are immersed in a resin and integrated. As another simple example, a method in which a substrate at a portion corresponding to the choke pattern 3 and the distributing / combining device 4 is hollowed out and a different dielectric substrate is embedded in the portion is also conceivable.

Conventionally, the choke pattern unit 3 and the dispersing / combining unit 4 cannot realize an optimum fine pattern unit or the performance of the microwave amplifier circuit varies due to the variation in pattern accuracy. By 1 the critical part can be reduced. In addition, the space can be used without difficulty in design. That is, since the parts of the choke pattern 3 and the distributing / synthesizing unit 4 are fine patterns, variations in assembly and optimum design values may not be realized due to the influence of the pattern accuracy.
Can eliminate this point. In addition, the choke pattern 3 has a problem that if the width is too narrow, a large current of the high-power transistor cannot flow. However, the first embodiment can solve the problem because the width can be made large.

Embodiment 2 FIG. FIG. 3 is a plan view of a dielectric substrate raw material 40 for multi-cavity formation of a microwave amplifier circuit according to a second embodiment of the present invention. In the figure, reference numeral 9 denotes a cut-off portion of a multi-panel substrate in mass production of a microwave amplification circuit board, and reference numeral 10 denotes a mounting portion for mounting a microwave amplification circuit or a part of the circuit. The dielectric substrate raw material 40 is obtained by chamfering the mounting portion 10 in a multi-faceted manner and using the chamfered mounting portions 10 for mounting the microwave amplifier circuit or a part thereof. 2, in the state of the single dielectric substrate raw material 40, only the mounting portion 10 is formed of an expensive high-frequency substrate material, and the other cutout portions 9 are formed of a low-cost substrate material, thereby reducing the cost. The dielectric substrate raw material 40 is used.

Embodiment 3 FIG. FIGS. 4 and 5 are plan views of a distribution / synthesis circuit as a microwave amplification circuit component according to the third embodiment of the present invention. FIG. 4 shows a small dielectric substrate 2.
FIG. 5 shows an interdigital coupler provided on a small-sized dielectric substrate 23. 4 and 5, the fine pattern 4
The portions corresponding to a and 4b are circuits integrated in a composite with lower permittivity than the surrounding portions. Embodiment 3
As described above, by selectively lowering the permittivity of some of the dielectric substrates 22 and 23 on which a single circuit is mounted as described above, the pattern thickness can be reduced to a level that does not affect the performance due to pattern accuracy and the like. It is possible to stabilize the distribution and combination level of the amplifier circuit and suppress performance variations and the like.

Embodiment 4 FIG. 6 is a plan view of a matching circuit of the microwave amplifier circuit according to the fourth embodiment. The portion corresponding to the choke pattern portion 4c of the small-sized dielectric substrate 24 is a circuit integrated with a lower permittivity than the surrounding portion, and is a conductor line for the choke pattern functionally. ing. Note that reference numeral 8c denotes a transistor matching circuit. According to the fourth embodiment, the choke pattern portion 4c can have a pattern thickness that does not affect the performance due to the pattern accuracy or the like. Therefore, RF leakage from the choke pattern of the microwave amplifier circuit is reduced, and the influence on the matching circuit is reduced. , Performance variations and the like can be suppressed.
That is, the fine pattern is 0.1 mm to 0.2 mm
Although the line width is as follows, the line width of the same impedance is smaller in the high permittivity than in the low permittivity, and the pattern accuracy is about ± 20 to 50 μm. However, according to the fourth embodiment, since the pattern thickness can be increased, such a disadvantage does not occur.

Embodiment 5 FIG. 7 is a plan view of a matching circuit as a microwave amplification circuit component according to the fifth embodiment. The portion of the fine pattern 4d formed of a conductor line on the dielectric substrate 25 is a circuit integrated with a composite having a lower permittivity than the surrounding portion, and is functionally a conductor line for a dielectric component in the matching circuit. It is. According to the fifth embodiment, the fine pattern portion can be formed to have a pattern thickness that does not affect the performance due to the pattern accuracy or the like, so that the influence on the matching circuit of the microwave amplifier circuit, the performance variation, and the like can be suppressed.

Embodiment 6 FIG. FIG. 8 is a plan view of a pattern near the case wall portion 11 (near the outer periphery of the substrate) of the microwave amplification circuit component according to the sixth embodiment. Dielectric substrate 26
The part 12 corresponding to the conductor pattern 8e near the case wall part 11 has a higher permittivity than the surrounding part.
It is a circuit that has been combined and integrated. Conventionally, the conductor pattern 8e has to be separated from the wall surface 11 by a distance L that is two to three times the conductor pattern width according to the design rule of the microwave circuit, so that a single dielectric substrate requires a large space. According to the sixth embodiment, only the portion 12 corresponding to the conductor pattern 8e is made to have a high dielectric constant, and the conductor pattern 8e is set to a pattern thickness W that does not affect the performance due to pattern accuracy or the like. The overall space can be reduced in size.

Embodiment 7 9 and 10 are a perspective view and a cross-sectional view of a bias circuit in which a microwave amplification circuit component according to the seventh embodiment is formed as a multilayer substrate. The cross-sectional portion 42b is a composite integrated circuit in which the dielectric constant is higher than that of the surrounding portion and the bias portion 42 is formed by sandwiching the cross-sectional portion 42b between the conductors 42x and 42y. 46 is a through hole portion, 5 is a DC cut capacitor, and 8e is a conductor pattern of a matching circuit. Conventionally, a bias chip capacitor 6 was attached as shown in FIG. 13. However, this is no longer necessary in the seventh embodiment, and the number of parts and the number of assembling steps can be reduced.

Embodiment 8 FIG. 11 and 12 are a perspective view and a top view of a feed-through portion of a discrete transistor as a microwave amplifier circuit component according to the eighth embodiment. In each figure, reference numeral 1 denotes a discrete transistor, which is mounted on a substrate 1m, and a substrate 54a is incorporated in a package 1t of the discrete transistor 1. On the surface side of the substrate 54a,
The conductor pattern 8f extends in the horizontal direction at the center, and the vertical board 54b is attached to the conductor pattern 8f in a direction perpendicular to the conductor pattern 8f. The vertical substrate 54b is for hermetically sealing the inside of the transistor, and has a combination of a microstrip line, a triplate, and a microstrip line for airtightness. In this case, as the substrate 54a, a part B to which the vertical substrate 54b in the vertical center direction is fixed, and the left and right A
Part 54e corresponding to part B (divided into two parts)
A part of the substrate 54a (the part corresponding to the triplate line) has a low dielectric constant. As described above, by lowering the dielectric constant of the portion 54e corresponding to the portion B of the triplate line, the central portion 8m of the line 8y is changed from the constricted state shown in FIG. It can be thick as shown. That is, the portion A is a microstrip line, the portion B is a triplate line, and the impedance of the portion B is lower than that of the portion A. Therefore, when connecting with the same impedance, conventionally, as shown in FIG. The pattern has to be thin. For this reason, an optimum pattern width cannot be realized, or the performance varies depending on the pattern accuracy. According to the eighth embodiment, as shown in FIG. 12B, this portion can be made thicker so as not to affect the performance, and the performance can be stabilized.

As described above, according to the present invention, of the dielectric portion in the microwave amplifier circuit, the dielectric constant can be lowered or increased in accordance with the optimum condition of the design field, and the dielectric material can be made expensive. Since the inexpensive substrate material is configured to be integrated into a single unit, the microwave amplifier circuit or its component alone can be reduced in cost, stabilized in performance, and can effectively utilize space.

[0029]

According to the first aspect of the present invention, the dielectric constant of a part of the dielectric substrate corresponding to a circuit of a specific part of the microwave amplifier circuit is selectively made different from other parts. Problems in pattern accuracy can be solved, performance can be stabilized, and a substrate having a high dielectric constant can be downsized, the number of assembling steps can be reduced, manufacturing variations can be reduced, and costs can be reduced.

According to the second aspect of the present invention, the mounting portion is formed of a high-frequency substrate material, and the cut-out portion other than the mounting portion is formed of a low-cost substrate material. The cost of the dielectric substrate raw material itself can be reduced.

According to the third aspect of the present invention, a portion having a reduced dielectric constant is provided, and this portion is a portion corresponding to the choke pattern portion of the microwave amplifier circuit. Variations can be reduced and a large current can flow.

According to the fourth aspect of the present invention, a portion having a reduced dielectric constant is provided, and this portion is a portion corresponding to the distribution / combination unit of the microwave amplifier circuit. Variations can be reduced and performance can be stabilized.

According to the fifth aspect of the present invention, a part of the dielectric substrate corresponding to a specific part of the microwave amplifier circuit is selectively made different from other parts, so that a variation in performance can be suppressed. .

According to the invention of claim 6, the microwave amplification circuit component is constituted by a broadband branch circuit, and the permittivity of a portion corresponding to the fine pattern portion of the circuit is set lower than the permittivity of other portions. Therefore, the pattern thickness in the broadband branch line circuit can be increased, and the performance variation can be suppressed.

According to the seventh aspect of the present invention, the microwave amplifier circuit component is composed of an interdigital coupler, and the dielectric constant of the portion corresponding to the fine pattern portion of the circuit is set lower than the other dielectric constants. In addition, the pattern thickness of the interdigital coupler can be increased, and performance variations can be suppressed.

According to the eighth aspect of the present invention, the microwave amplifier circuit component is constituted by a matching circuit, and the dielectric constant of the portion corresponding to the portion of the choke pattern of the circuit is set lower than the other dielectric constants. The pattern thickness of the matching circuit can be increased, RF leakage from the choke pattern can be reduced, and performance variations can be suppressed.

According to the ninth aspect of the present invention, the microwave amplifying circuit component is composed of a matching circuit, and the dielectric constant of the portion corresponding to the fine pattern portion of the circuit is set lower than the other dielectric constants. The pattern thickness can be set to a level that does not affect the performance, and performance variations can be suppressed.

According to the tenth aspect of the present invention, the dielectric constant of the portion corresponding to the conductor pattern near the case wall surface of the microwave amplifier circuit component is set higher than the other dielectric constants. Can be reduced to a pattern thickness that does not affect the performance, and the size can be reduced.

According to the eleventh aspect of the present invention, since a portion having a high dielectric constant is provided, and the bias capacitor is formed so that the layer of the portion is sandwiched between conductors, the capacitor can be realized without providing a chip capacitor. The number of parts and the number of assembly steps can be reduced.

According to the twelfth aspect of the present invention, since the dielectric constant of the portion corresponding to the portion of the triplate line of the discrete transistor is set lower than that of the other portion, the pattern thickness of the triplate line in the discrete transistor can be reduced. The thickness can be made small enough not to affect the performance, and the performance can be stabilized.

[Brief description of the drawings]

FIG. 1 is a perspective view showing Embodiment 1 of a microwave amplification circuit according to the present invention.

FIG. 2 is an equivalent circuit diagram of Embodiment 1 of the microwave amplification circuit according to the present invention.

FIG. 3 is a plan view showing Embodiment 2 of a dielectric substrate raw material of a microwave amplification circuit according to the present invention.

FIG. 4 is a plan view showing a microwave amplifier circuit component according to a third embodiment of the present invention.

FIG. 5 is a plan view showing a microwave amplifier circuit component according to a third embodiment of the present invention.

FIG. 6 is a plan view showing a microwave amplifier circuit component according to a fourth embodiment of the present invention.

FIG. 7 is a plan view showing a microwave amplification circuit component according to a fifth embodiment of the present invention.

FIG. 8 is a plan view showing a microwave amplifier circuit component according to a sixth embodiment of the present invention.

FIG. 9 is a perspective view showing a microwave amplifier circuit component according to a seventh embodiment of the present invention.

FIG. 10 is a sectional view of a microwave amplification circuit component according to a seventh embodiment of the present invention.

FIG. 11 is an exploded perspective view showing a microwave amplification circuit component according to an eighth embodiment of the present invention.

FIG. 12 is a plan view showing a microwave amplifier circuit component according to an eighth embodiment of the present invention.

FIG. 13 is a perspective view illustrating an example of a conventional microwave amplifier circuit.

[Explanation of symbols]

1 transistor, 21, 22, 23, 24, 25 dielectric substrate, 3 choke pattern section, 4 distribution combiner,
5, 6 chip capacitor, 7 terminator, 9 cut-off part, 10 mounting part, 11 case wall part, 12 bias capacitor, 13 multilayer board, 14 board, 15
Conventional high-frequency ceramic substrate, 16 through-hole portion, 42b cross-sectional portion, 42 bias capacitor,
54e Site corresponding to the triplate line.

Claims (12)

[Claims] 1. The microwave amplification circuit mounted on a dielectric substrate, wherein the dielectric constant of a part of the dielectric substrate corresponding to a circuit of a specific part of the microwave amplification circuit is selectively changed to another part. A microwave amplifier circuit characterized by being different from the above. 2. A dielectric substrate raw material having a mounting portion for mounting a microwave amplifier circuit or a part of the circuit and a cut-off portion, wherein the mounting portion is formed of a high-frequency substrate material. A raw material for a dielectric substrate, wherein a cut-out portion other than the portion is formed of a low-cost substrate material. 3. The microwave amplification circuit according to claim 1, wherein a portion having a reduced dielectric constant is provided, and the portion corresponds to a choke pattern portion of the microwave amplification circuit. 4. The microwave amplifier circuit according to claim 1, wherein a portion having a reduced dielectric constant is provided, and the portion is a portion corresponding to a distribution / combination unit of the microwave amplifier circuit. 5. A part of a microwave amplifier circuit mounted on a dielectric substrate, wherein the dielectric constant of a part of the dielectric substrate corresponding to a specific portion of the part is selectively changed to another part. A microwave amplification circuit component characterized by a difference. 6. The microwave amplifying circuit component according to claim 5, wherein the microwave amplifying circuit component is constituted by a broadband branch circuit, and the permittivity of a portion corresponding to the fine pattern portion of the circuit is set lower than the permittivity of other portions. Microwave amplifier circuit parts. 7. The microwave amplifying circuit component according to claim 5, wherein said microwave amplifying circuit component comprises an interdigital coupler, and a dielectric constant of a portion corresponding to a fine pattern portion of said circuit is set lower than other dielectric constants. Wave amplification circuit parts. 8. The microwave according to claim 5, wherein said microwave amplifying circuit component comprises a matching circuit, and a dielectric constant of a portion corresponding to a portion of the choke pattern of said circuit is set lower than other dielectric constants. Amplifier circuit parts. 9. The microwave according to claim 5, wherein said microwave amplification circuit component comprises a matching circuit, and a dielectric constant of a portion corresponding to a fine pattern portion of said circuit is set lower than other dielectric constants. Amplifier circuit parts. 10. The microwave amplifier circuit component according to claim 5, wherein a dielectric constant of a portion corresponding to a portion of the conductor pattern near a case wall surface of the microwave amplifier circuit component is set higher than other dielectric constants. 11. The bias capacitor according to claim 5, wherein a portion having a high dielectric constant is provided in a layer portion of the dielectric substrate, and the layer of the portion is sandwiched between conductors to form a bias capacitor. Microwave amplifier circuit parts. 12. The microwave amplifier according to claim 5, wherein the microwave amplification circuit component is constituted by a discrete transistor, and a portion of the discrete transistor corresponding to a portion of the triplate line is set to have a lower dielectric constant than other portions. Wave amplification circuit parts.